WO2023065627A1 - Optical filter and manufacturing method therefor - Google Patents
Optical filter and manufacturing method therefor Download PDFInfo
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- WO2023065627A1 WO2023065627A1 PCT/CN2022/089447 CN2022089447W WO2023065627A1 WO 2023065627 A1 WO2023065627 A1 WO 2023065627A1 CN 2022089447 W CN2022089447 W CN 2022089447W WO 2023065627 A1 WO2023065627 A1 WO 2023065627A1
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- film
- oxide
- optical filter
- nitride
- refractive index
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- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002834 transmittance Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 16
- -1 titanium hydride Chemical compound 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 6
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 claims description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910001610 cryolite Inorganic materials 0.000 claims description 3
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 3
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910000048 titanium hydride Inorganic materials 0.000 claims description 3
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Abstract
An optical filter and a manufacturing method therefor. The optical filter comprises a substrate (1), and a band-pass film (2) and an antireflection film (3) which are provided on two sides of the substrate (1); and the band-pass film (2) and the antireflection film (3) are both formed by alternately arranging high and low refractive index film layers. At an incident angle of 0°-50°, the transmittance of the optical filter within a wave band of 1000 nm-2000 nm is 95% or above. The optical filter can achieve high transmittance within a wave band of 1000 nm-2000 nm and at an incident angle of 0°-50°.
Description
本申请要求于2021年10月20日提交中国专利局、申请号为202111223221.1、申请名称为“滤光片及其制备方法”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application with application number 202111223221.1 and application title "Optical Filter and Its Preparation Method" filed with the China Patent Office on October 20, 2021, the entire contents of which are hereby incorporated by reference in this application .
本发明涉及一种滤光片及其制备方法。The invention relates to an optical filter and a preparation method thereof.
随着科技的发展,激光探测技术在距离探测、生物识别以及各类工业生产中被广泛应用。因此,对于激光抗干扰能力的要求也越来越高。根据激光探测原理,随着激光探测波长的红移,激光的抗干扰能力可以得到有效的改善。但是,现有技术中,在940nm波段附近的红外激光产品还无法满足高抗干扰能力的要求。另外,激光波段的长移势必会导致膜厚的增大,进而会导致膜层存在更大的应力,使得镜片表面容易产生畸变。而光线经过畸变的表面后会出现反射损失,反射损失的能量值与面型畸变量关系密切,即畸变量越大,则能量损失越严重,因此会严重降低产品的透过率。可见,现有技术存在的上述缺陷对波长更长的红外激光产品提出了更高的要求。With the development of science and technology, laser detection technology is widely used in distance detection, biometric identification and various industrial production. Therefore, the requirements for laser anti-interference ability are getting higher and higher. According to the principle of laser detection, with the red shift of the laser detection wavelength, the anti-interference ability of the laser can be effectively improved. However, in the prior art, infrared laser products near the 940nm band cannot meet the requirement of high anti-interference ability. In addition, the long shift of the laser wavelength band will inevitably lead to an increase in film thickness, which in turn will lead to greater stress in the film layer, making the lens surface prone to distortion. When light passes through a distorted surface, there will be reflection loss, and the energy value of reflection loss is closely related to the amount of surface distortion, that is, the greater the amount of distortion, the more serious the energy loss, which will seriously reduce the transmittance of the product. It can be seen that the above-mentioned defects in the prior art put forward higher requirements for infrared laser products with longer wavelengths.
发明内容Contents of the invention
本发明的目的在于提供一种滤光片及其制备方法。The object of the present invention is to provide an optical filter and a preparation method thereof.
为实现上述发明目的,本发明提供一种滤光片及其制备方法,滤光片包括基板以及设置在所述基板两侧的带通膜和增透膜,所述带通膜和所述增透膜均由高、低折射率膜层交替排列形成。In order to achieve the purpose of the above invention, the present invention provides an optical filter and a preparation method thereof. The optical filter includes a substrate and a band-pass film and an anti-reflection film arranged on both sides of the substrate, the band-pass film and the anti-reflection film The transparent films are formed by alternating high and low refractive index film layers.
根据本发明的一个方面,所述高折射率膜层的材料折射率在2.0以上,所述低折射率膜层的材料折射率在2.0以下。According to one aspect of the present invention, the refractive index of the material of the high refractive index film layer is above 2.0, and the refractive index of the material of the low refractive index film layer is below 2.0.
根据本发明的一个方面,所述带通膜中的高折射率膜层的材料包括氧化锗、氧化钛、氧化铌、氧化钽、氧化镧、氢化硅、氢化钛、氢化锗、氢化铌、氢化钽、氢化镧、氮化硅、氮化锗、氮化钛、氮化铌、氮化钽、氮化镧、氢氮化硅、氢氮化锗、氢氮化钛、氢氮化铌、氢氮化钽、氢氮化镧;According to one aspect of the present invention, the material of the high refractive index film layer in the bandpass film includes germanium oxide, titanium oxide, niobium oxide, tantalum oxide, lanthanum oxide, silicon hydride, titanium hydride, germanium hydride, niobium hydride, hydride Tantalum, lanthanum hydride, silicon nitride, germanium nitride, titanium nitride, niobium nitride, tantalum nitride, lanthanum nitride, silicon hydrogen nitride, germanium hydrogen nitride, titanium hydrogen nitride, niobium hydrogen nitride, hydrogen Tantalum nitride, lanthanum hydrogen nitride;
所述带通膜中的低折射率膜层的材料包括氧化硅、氟化镁、冰晶石。The material of the low-refractive-index film layer in the band-pass film includes silicon oxide, magnesium fluoride, and cryolite.
根据本发明的一个方面,所述增透膜中的高折射率膜层的材料包括氧化钛、氧化铌、氧化钽、氧化镧、氧化铪、氧化锆、氧化锗;According to one aspect of the present invention, the material of the high refractive index film layer in the antireflection film includes titanium oxide, niobium oxide, tantalum oxide, lanthanum oxide, hafnium oxide, zirconium oxide, germanium oxide;
所述增透膜中的低折射率膜层的材料包括氧化铝、氧化镁、氧化硅、氟化镁、氟化镧、氟化铝。The material of the low refractive index film layer in the anti-reflection film includes aluminum oxide, magnesium oxide, silicon oxide, magnesium fluoride, lanthanum fluoride, and aluminum fluoride.
根据本发明的一个方面,所述带通膜的厚度在10000nm-20000nm之间,所述增透膜的厚度在10000nm-20000nm之间。According to one aspect of the present invention, the thickness of the bandpass film is between 10000nm and 20000nm, and the thickness of the antireflection film is between 10000nm and 20000nm.
根据本发明的一个方面,所述带通膜的厚度与所述增透膜的厚度的比例在1:1至1:1.8之间。According to one aspect of the present invention, the ratio of the thickness of the bandpass film to the thickness of the antireflection film is between 1:1 and 1:1.8.
根据本发明的一个方面,所述带通膜具有15-30对高、低折射率膜层;According to one aspect of the present invention, the bandpass film has 15-30 pairs of high and low refractive index film layers;
所述增透膜具有20-50对高、低折射率膜层。The anti-reflection coating has 20-50 pairs of high and low refractive index film layers.
根据本发明的一个方面,所述滤光片在0°-50°入射角度下,1000nm-2000nm波段内的透过率在95%以上。According to one aspect of the present invention, the transmittance of the optical filter in the 1000nm-2000nm band is above 95% at an incident angle of 0°-50°.
根据本发明的一个方面,所述滤光片的表面PV值在直径17mm内小于20微米。According to one aspect of the present invention, the surface PV value of the filter is less than 20 microns within a diameter of 17 mm.
用于制备滤光片的方法,在基板上依次镀制带通膜和增透膜,且所述增透膜在150℃以上的环境下镀制,首层必须为二氧化硅材料,镀膜离子源功率比其余层二氧化硅高,为其余层的1.5倍;镀膜速率比其余二氧化硅层低,约为其余层的0.8倍。The method used to prepare the optical filter is to sequentially plate a bandpass film and an anti-reflection film on the substrate, and the anti-reflection film is plated in an environment above 150°C. The first layer must be made of silicon dioxide, and the coating ions The source power is higher than that of other layers of silicon dioxide, which is 1.5 times of that of other layers; the coating rate is lower than that of other layers of silicon dioxide, about 0.8 times of that of other layers.
根据本发明的构思,通过对镀膜材料以及膜层厚度的合理选取,使得滤光片在1000nm-2000nm波段内,0°-50°范围内的大角度入射下能实现高透过率。并且,可以保证镜片表面面型在直径17mm范围内的PV值小于20微米。According to the idea of the present invention, through reasonable selection of coating material and film thickness, the optical filter can achieve high transmittance in the range of 1000nm-2000nm and large angle incidence within the range of 0°-50°. Moreover, it can ensure that the PV value of the lens surface within the diameter range of 17mm is less than 20 microns.
根据本发明的方案,使带通膜的厚度与增透膜的厚度的比例满足一定关系,从而可以更好的实现应力平衡。According to the solution of the present invention, the ratio of the thickness of the band-pass film to the thickness of the anti-reflection film satisfies a certain relationship, so that stress balance can be better achieved.
根据本发明的方案,在制作滤光片时,先镀制应力较大的带通膜,再镀制增透膜,并且在高温环境下进行增透膜的镀制,从而可以有效的消除膜层的应力。According to the solution of the present invention, when making an optical filter, a band-pass film with a relatively large stress is plated first, and then an anti-reflection film is plated, and the anti-reflection film is plated in a high temperature environment, so that the film can be effectively eliminated. layer stress.
图1示意性表示本发明的一种实施方式的滤光片的结构图;Fig. 1 schematically represents the structure diagram of the optical filter of an embodiment of the present invention;
图2示意性表示本发明的一种实施方式的滤光片在1300nm波段的光谱图;Fig. 2 schematically represents the spectrogram of the optical filter of an embodiment of the present invention in the 1300nm band;
图3示意性表示本发明的一种实施方式的滤光片在1550nm波段的光谱图;Fig. 3 schematically represents the spectrogram of the optical filter of an embodiment of the present invention in the 1550nm band;
图4示意性表示本发明的一种实施方式的滤光片在1800nm波段的光谱图。Fig. 4 schematically shows the spectrum of an optical filter in an embodiment of the present invention in the 1800nm band.
为了更清楚地说明本发明实施方式或现有技术中的技术方案,下面将对实施方式中所需要使用的附图作简单地介绍。显而易见地,下面描述中的附图仅仅是本发明的一些实施方式,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly describe the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings that are used in the embodiments. Apparently, the drawings in the following description are only some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to these drawings without creative efforts.
在针对本发明的实施方式进行描述时,术语“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”所表达的方位或位置关系是基于相关附图所示的方位或位置关系,其仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此上述术语不能理解为对本发明的限制。When describing the embodiments of the present invention, the terms "vertical", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", " The orientation or positional relationship expressed by "horizontal", "top", "bottom", "inner" and "outer" is based on the orientation or positional relationship shown in the relevant drawings, which are only for the convenience of describing the present invention and simplifying the description, and It is not to indicate or imply that the device or element referred to must have a particular orientation, be constructed, or operate in a particular orientation, and thus the above terms should not be construed as limiting the invention.
下面结合附图和具体实施方式对本发明作详细地描述,实施方式不能在 此一一赘述,但本发明的实施方式并不因此限定于以下实施方式。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, and the embodiments cannot be repeated here one by one, but the embodiments of the present invention are not therefore limited to the following embodiments.
参见图1,本发明的(带通)滤光片,包括基板1以及设置在基板1两侧的带通膜2和增透膜3,带通膜2和增透膜3均由高、低折射率膜层交替排列形成。其中,高折射率膜层的材料折射率在2.0以上,低折射率膜层的材料折射率在2.0以下。本发明中,带通膜2具有15-30对高、低折射率膜层,增透膜3具有20-50对高、低折射率膜层。Referring to Fig. 1, (band-pass) optical filter of the present invention comprises substrate 1 and band-pass film 2 and anti-reflection film 3 that are arranged on both sides of substrate 1, band-pass film 2 and anti-reflection film 3 are all by high, low The refractive index film layers are arranged alternately. Wherein, the material refractive index of the high refractive index film layer is above 2.0, and the material refractive index of the low refractive index film layer is below 2.0. In the present invention, the bandpass film 2 has 15-30 pairs of high and low refractive index film layers, and the antireflection film 3 has 20-50 pairs of high and low refractive index film layers.
本发明中,带通膜2中的高折射率膜层的材料可以为金属、半导体及其全部或部分氧化物、氮化物、氢化物、氢氧化物以及氮氧化物。例如,氧化锗、氧化钛、氧化铌、氧化钽、氧化镧、氢化硅、氢化钛、氢化锗、氢化铌、氢化钽、氢化镧、氮化硅、氮化锗、氮化钛、氮化铌、氮化钽、氮化镧、氢氮化硅、氢氮化锗、氢氮化钛、氢氮化铌、氢氮化钽、氢氮化镧中的一种或几种混合物(例如氧化钛与氧化镧的混合物、氧化镧与氧化铝的混合物)。带通膜2中的低折射率膜层的材料包括氧化硅、氟化镁、冰晶石中的一种或几种混合物。由此,这些材料的选择可以使滤光片实现在一定波段内大角度入射下的高透过率。In the present invention, the material of the high refractive index film layer in the bandpass film 2 can be metal, semiconductor and all or part of their oxides, nitrides, hydrides, hydroxides and oxynitrides. For example, germanium oxide, titanium oxide, niobium oxide, tantalum oxide, lanthanum oxide, silicon hydride, titanium hydride, germanium hydride, niobium hydride, tantalum hydride, lanthanum hydride, silicon nitride, germanium nitride, titanium nitride, niobium nitride , tantalum nitride, lanthanum nitride, silicon hydrogen nitride, germanium hydrogen nitride, titanium hydrogen nitride, niobium hydrogen nitride, tantalum hydrogen nitride, lanthanum hydrogen nitride (such as titanium oxide mixture with lanthanum oxide, mixture of lanthanum oxide and aluminum oxide). The material of the low refractive index film layer in the bandpass film 2 includes one or more mixtures of silicon oxide, magnesium fluoride and cryolite. Therefore, the selection of these materials can enable the filter to achieve high transmittance under large-angle incidence in a certain wavelength band.
增透膜3中的高折射率膜层的材料为金属氧化物,例如,氧化钛、氧化铌、氧化钽、氧化镧、氧化铪、氧化锆、氧化锗中的一种或几种混合物。增透膜3中的低折射率膜层的材料包括氧化铝、氧化镁、氧化硅、氟化镁、氟化镧、氟化铝中的一种或几种混合物。同时,低折射率膜层的上述材料也可以与高折射率膜层的材料混合成其他混合物。The material of the high refractive index film layer in the anti-reflection film 3 is metal oxide, for example, one or more mixtures of titanium oxide, niobium oxide, tantalum oxide, lanthanum oxide, hafnium oxide, zirconium oxide, and germanium oxide. The material of the low refractive index film layer in the anti-reflection film 3 includes one or more mixtures of aluminum oxide, magnesium oxide, silicon oxide, magnesium fluoride, lanthanum fluoride, and aluminum fluoride. At the same time, the above-mentioned materials of the low-refractive index film layer can also be mixed with materials of the high-refractive index film layer to form other mixtures.
当然,带通膜2和增透膜3中,高折射率膜层和低折射率膜层的材料不限于上述中的一种,还可以选择多种材料的膜层搭配形成各个膜系。Of course, in the band-pass film 2 and the anti-reflection film 3, the material of the high-refractive index film layer and the low-refractive index film layer is not limited to one of the above-mentioned ones, and film layers of various materials can also be selected to form various film systems.
本发明中,带通膜2的厚度在10000nm-20000nm之间,增透膜3的厚度在10000nm-20000nm之间。并且,随着增透膜3的膜层加厚,基板1两侧的膜层的应力也会逐渐保持相对平衡。因此,本发明将带通膜2的厚度与增透膜3的厚度的比例设置在1:1至1:1.8之间,从而实现应力的平衡。In the present invention, the thickness of the bandpass film 2 is between 10000nm and 20000nm, and the thickness of the antireflection film 3 is between 10000nm and 20000nm. Moreover, as the film layer of the anti-reflection film 3 becomes thicker, the stresses of the film layers on both sides of the substrate 1 will gradually maintain a relative balance. Therefore, in the present invention, the ratio of the thickness of the bandpass film 2 to the thickness of the anti-reflection film 3 is set between 1:1 and 1:1.8, so as to achieve stress balance.
以下以三种不同波段的实施方式来详细描述本发明的滤光片:The following describes the optical filter of the present invention in detail in the implementation manner of three different wavelength bands:
第一种实施方式first implementation
结合图2,本实施方式的滤光片中的带通膜2和增透膜3的组成如下表1所示:In conjunction with FIG. 2, the composition of the bandpass film 2 and the antireflection film 3 in the optical filter of the present embodiment is shown in Table 1 below:
表1Table 1
第二种实施方式Second implementation
结合图3,本实施方式的滤光片中的带通膜2和增透膜3的组成如下表2所示:In conjunction with FIG. 3, the composition of the bandpass film 2 and the antireflection film 3 in the optical filter of the present embodiment is shown in Table 2 below:
表2Table 2
第三种实施方式third implementation
结合图4,本实施方式的滤光片中的带通膜2和增透膜3的组成如下表3所示:In conjunction with FIG. 4, the composition of the bandpass film 2 and the antireflection film 3 in the optical filter of the present embodiment is shown in Table 3 below:
表3table 3
本发明的滤光片的制备方法中,首先在基板1的一侧镀制带通膜2,然后再在基板1的另一侧镀制增透膜3。并且,在镀制增透膜3时应在150℃以上的高温环境下进行,从而在镀制增透膜3时可以同时对已成膜的带通膜2进行高温烘烤以释放应力,并能利用增透膜3的应力逐渐对带通膜2进行应力平衡。并且,在镀制时首层需为二氧化硅材料,且其镀膜离子源功率应高于其余层二 氧化硅约1.5倍,镀膜速率则低于其余二氧化硅层约0.8倍。In the preparation method of the optical filter of the present invention, the band-pass film 2 is coated on one side of the substrate 1 first, and then the antireflection film 3 is coated on the other side of the substrate 1 . Moreover, when coating the anti-reflection film 3, it should be carried out in a high-temperature environment above 150°C, so that when the anti-reflection film 3 is plated, the formed band-pass film 2 can be baked at a high temperature at the same time to release the stress, and The stress of the antireflection film 3 can be used to gradually balance the stress of the bandpass film 2 . Moreover, the first layer needs to be made of silicon dioxide during plating, and the power of the ion source of the coating should be about 1.5 times higher than that of the rest of the silicon dioxide layers, and the coating rate should be about 0.8 times lower than that of the rest of the silicon dioxide layers.
满足上述设置,可以使得滤光片实现在0°-50°入射角度下,1000nm-2000nm近红外的任意波段内的透过率在95%以上。再配合本发明的滤光片的特殊结构设计,可以使得滤光片的表面PV值在直径17mm内小于20微米。Satisfying the above settings can make the filter achieve a transmittance of more than 95% in any wavelength band of 1000nm-2000nm near infrared at an incident angle of 0°-50°. Combined with the special structural design of the optical filter of the present invention, the surface PV value of the optical filter can be less than 20 microns within a diameter of 17 mm.
以上所述仅为本发明的一个实施方式而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包括在本发明的保护范围之内。The above description is only an embodiment of the present invention, and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
Claims (8)
- 一种滤光片,其特征在于,包括基板(1)以及设置在所述基板(1)两侧的带通膜(2)和增透膜(3),所述带通膜(2)和所述增透膜(3)均由高、低折射率膜层交替排列形成;An optical filter, characterized in that it comprises a substrate (1) and a bandpass film (2) and an anti-reflection film (3) arranged on both sides of the substrate (1), the bandpass film (2) and The anti-reflection film (3) is formed by alternating high and low refractive index film layers;所述滤光片在0°-50°入射角度下,1000nm-2000nm波段内的透过率在95%以上。The transmittance of the optical filter in the 1000nm-2000nm band is above 95% at an incident angle of 0°-50°.
- 根据权利要求1所述的滤光片,其特征在于,所述高折射率膜层的材料折射率在2.0以上,所述低折射率膜层的材料折射率在2.0以下。The optical filter according to claim 1, characterized in that, the refractive index of the material of the high refractive index film layer is above 2.0, and the material refractive index of the low refractive index film layer is below 2.0.
- 根据权利要求2所述的滤光片,其特征在于,所述带通膜(2)中的高折射率膜层的材料包括氧化锗、氧化钛、氧化铌、氧化钽、氧化镧、氢化硅、氢化钛、氢化锗、氢化铌、氢化钽、氢化镧、氮化硅、氮化锗、氮化钛、氮化铌、氮化钽、氮化镧、氢氮化硅、氢氮化锗、氢氮化钛、氢氮化铌、氢氮化钽、氢氮化镧;The optical filter according to claim 2, characterized in that, the material of the high refractive index film layer in the bandpass film (2) comprises germanium oxide, titanium oxide, niobium oxide, tantalum oxide, lanthanum oxide, silicon hydride , titanium hydride, germanium hydride, niobium hydride, tantalum hydride, lanthanum hydride, silicon nitride, germanium nitride, titanium nitride, niobium nitride, tantalum nitride, lanthanum nitride, silicon hydrogen nitride, germanium hydrogen nitride, Titanium hydrogen nitride, niobium hydrogen nitride, tantalum hydrogen nitride, lanthanum hydrogen nitride;所述带通膜(2)中的低折射率膜层的材料包括氧化硅、氟化镁、冰晶石。The material of the low-refractive-index film layer in the band-pass film (2) includes silicon oxide, magnesium fluoride, and cryolite.
- 根据权利要求2所述的滤光片,其特征在于,所述增透膜(3)中的高折射率膜层的材料包括氧化钛、氧化铌、氧化钽、氧化镧、氧化铪、氧化锆、氧化锗;The optical filter according to claim 2, characterized in that, the material of the high refractive index film layer in the antireflection film (3) comprises titanium oxide, niobium oxide, tantalum oxide, lanthanum oxide, hafnium oxide, zirconium oxide , germanium oxide;所述增透膜(3)中的低折射率膜层的材料包括氧化铝、氧化镁、氧化硅、氟化镁、氟化镧、氟化铝。The material of the low refractive index film layer in the anti-reflection film (3) includes aluminum oxide, magnesium oxide, silicon oxide, magnesium fluoride, lanthanum fluoride, and aluminum fluoride.
- 根据权利要求1所述的滤光片,其特征在于,所述带通膜(2)的厚度在10000nm-20000nm之间,所述增透膜(3)的厚度在10000nm-20000nm之间。The optical filter according to claim 1, characterized in that, the thickness of the bandpass film (2) is between 10000nm-20000nm, and the thickness of the antireflection film (3) is between 10000nm-20000nm.
- 根据权利要求1所述的滤光片,其特征在于,所述带通膜(2)的厚度与所述增透膜(3)的厚度的比例在1:1至1:1.8之间。The optical filter according to claim 1, characterized in that, the ratio of the thickness of the bandpass film (2) to the thickness of the antireflection film (3) is between 1:1 and 1:1.8.
- 根据权利要求1所述的滤光片,其特征在于,所述滤光片的表面PV值在直径17mm内小于20微米。The optical filter according to claim 1, wherein the surface PV value of the optical filter is less than 20 microns within a diameter of 17 mm.
- 一种用于制备权利要求1-7所述的滤光片的方法,其特征在于,在基板(1)上依次镀制带通膜(2)和增透膜(3),且所述增透膜(3)在150℃以上的环境下镀制。A method for preparing the optical filter according to claims 1-7, characterized in that, on the substrate (1), a bandpass film (2) and an anti-reflection film (3) are sequentially plated, and the anti-reflection film (3) is The transparent film (3) is plated in an environment above 150°C.
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- 2022-04-27 WO PCT/CN2022/089447 patent/WO2023065627A1/en unknown
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CN213091919U (en) * | 2020-09-02 | 2021-04-30 | 信阳舜宇光学有限公司 | Coating protective cover |
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CN113820775A (en) * | 2021-10-20 | 2021-12-21 | 信阳舜宇光学有限公司 | Optical filter and preparation method thereof |
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