CN113900171A - Near-infrared dual-waveband band-pass filter and preparation method thereof - Google Patents
Near-infrared dual-waveband band-pass filter and preparation method thereof Download PDFInfo
- Publication number
- CN113900171A CN113900171A CN202111197309.0A CN202111197309A CN113900171A CN 113900171 A CN113900171 A CN 113900171A CN 202111197309 A CN202111197309 A CN 202111197309A CN 113900171 A CN113900171 A CN 113900171A
- Authority
- CN
- China
- Prior art keywords
- refractive
- index
- film
- band
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000002834 transmittance Methods 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 230000003647 oxidation Effects 0.000 claims description 55
- 238000007254 oxidation reaction Methods 0.000 claims description 55
- 238000000151 deposition Methods 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 37
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 35
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
- 239000013077 target material Substances 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 12
- 230000009471 action Effects 0.000 claims description 11
- 230000008033 biological extinction Effects 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- -1 silicon nitride hydride Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 200
- 238000002329 infrared spectrum Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 41
- 238000001704 evaporation Methods 0.000 description 12
- 238000010849 ion bombardment Methods 0.000 description 12
- 238000007747 plating Methods 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003333 near-infrared imaging Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003238 somatosensory effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optical Filters (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of optical thin films, and particularly relates to a near-infrared dual-waveband band-pass filter and a preparation method thereof, wherein the near-infrared dual-waveband band-pass filter comprises a substrate, a dual-band pass film system arranged on one side of the substrate, and an AR film system arranged on the other side of the substrate; the double-band-pass film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer from inside to outside, and the outermost layer of the low-refractive-index film layers; the AR film system includes low refractive index film layers and high refractive index film layers alternately deposited layer by layer from inside to outside, and is the outermost layer of the low refractive index film layers. The invention can meet the requirement of 800nm-2000nm near infrared with dual-waveband range high transmissivity characteristic; the band-pass filter has high transmittance (> 95%) in the near-infrared spectrum bands of 1000-.
Description
Technical Field
The invention belongs to the technical field of optical films, and particularly relates to a near-infrared dual-waveband band-pass filter and a preparation method thereof.
Background
The related preparation method related by the prior invention is completed by the following steps:
(1) coating a band-pass filter film on a single surface of a substrate
a. Cleaning a substrate, and bombarding for 2-6 min by an ion source;
b. putting the substrate into a vacuum chamber, vacuumizing to 9 x 10 < -3 > Pa-2 x 10 < -4 > Pa, heating the substrate to 50-170 ℃, and preserving heat for 10-60 min;
c. plating a 1 st film layer, pre-melting the SiO film material, and performing ion bombardment on the substrate by using the pre-melted SiO film material, wherein the vacuum degree is 9 multiplied by 10 < -3 > Pa to 2 multiplied by 10 < -4 > Pa, the ion bombardment voltage is 100V to 130V negative high voltage, and the ion bombardment time is 8min to 13 min; evaporating by using SiO film material, wherein the pressure of a vacuum chamber during evaporation is 9 x 10 < -3 > Pa-2 x 10 < -4 > Pa, the evaporation rate is 0.5nm/s-2nm/s, so that SiO film material ions are deposited on a substrate, and the thickness of the film layer 1 is determined by adopting a quartz crystal monitoring method;
d. plating a 2 nd film layer, pre-melting the Ge film material, and performing ion bombardment on the substrate by using the pre-melted Ge film material, wherein the vacuum degree is 9 multiplied by 10 < -3 > Pa to 2 multiplied by 10 < -4 > Pa, the ion bombardment voltage is 100V to 130V negative high voltage, and the ion bombardment time is 8min to 13 min; evaporating by using a Ge film material, wherein the pressure of a vacuum chamber during evaporation is 9 x 10 < -3 > Pa-2 x 10 < -4 > Pa, the evaporation rate is 0.5nm/s-2nm/s, so that Ge film material ions are deposited on the substrate, and the thickness of the 2 nd film layer is determined by adopting a quartz crystal monitoring method;
e. c, repeating the step c and the step d in sequence, and plating a 3 rd to 18 th film layer; d, repeating the step d and the step c in sequence, and plating a 19 th to a 34 th film layer;
f. placing the optical filter with the coated 34 layers of film layers in a vacuum chamber at 200 ℃ for heat preservation for 2 hours, cooling to room temperature, and taking out the optical part with the single-sided coated band-pass filter film;
(2) coating a negative light filtering film on the other surface of the substrate
a. Cleaning the surface of the substrate which is not coated with the film, and bombarding the surface with an ion source for 2-6 min;
b. putting the substrate into a vacuum chamber, vacuumizing to 9 x 10 < -3 > Pa-2 x 10 < -4 > Pa, heating the substrate to 50-170 ℃, and preserving heat for 10-60 min;
c. plating a 1 st film layer, pre-melting the SiO film material, and performing ion bombardment on the substrate by using the pre-melted SiO film material, wherein the vacuum degree is 9 multiplied by 10 < -3 > Pa to 2 multiplied by 10 < -4 > Pa, the ion bombardment voltage is 100V to 130V negative high voltage, and the ion bombardment time is 8min to 13 min; evaporating by using SiO film material, wherein the pressure of a vacuum chamber during evaporation is 9 x 10 < -3 > Pa-2 x 10 < -4 > Pa, the evaporation rate is 0.5nm/s-2nm/s, so that SiO film material ions are deposited on a substrate, and the thickness of the film layer 1 is determined by adopting a quartz crystal monitoring method;
d. plating a 2 nd film layer, pre-melting the Ge film material, and performing ion bombardment on the substrate by using the pre-melted Ge film material, wherein the vacuum degree is 9 multiplied by 10 < -3 > Pa to 2 multiplied by 10 < -4 > Pa, the ion bombardment voltage is 100V to 130V negative high voltage, and the ion bombardment time is 8min to 13 min; evaporating by using a Ge film material, wherein the pressure of a vacuum chamber during evaporation is 9 x 10 < -3 > Pa-2 x 10 < -4 > Pa, the evaporation rate is 0.5nm/s-2nm/s, so that Ge film material ions are deposited on the substrate, and the thickness of the 2 nd film layer is determined by adopting a quartz crystal monitoring method;
e. c, repeating the step c and the step d in sequence, and plating a 3 rd to 18 th film layer; d, repeating the step d and the step c in sequence, and plating a 19 th-24 th film layer; repeating the step d, and plating a 25 th film layer;
f. and (3) placing the optical filter with the plated 25-layer film layer in a vacuum chamber at 200 ℃ for heat preservation for 2 hours, cooling to room temperature, and taking out the optical part with the two surfaces plated.
However, the above preparation method of the dual-band bandpass filter cannot meet the spectrum requirement of the near infrared 800nm-2000nm band, and cannot perform system imaging in the band.
Disclosure of Invention
The invention provides a method for preparing a near-infrared dual-band-pass filter, which provides a high transmission characteristic in the dual-band ranges of 1000-1135nm and 1370-1570nm for the near-infrared band in the band-pass range of 800-2000nm, meanwhile, the dual-band-pass filter has the cut-off effect in the wave band ranges of 350-960nm, 1190-1290nm and 1670-2000nm, blue shifts of 4 wavelengths with transmittance equal to 50 at position T50 at 0-30 deg.C are less than 18nm, less than 25nm, less than 33nm, and less than 33nm, under the angle of 0-60 degrees, the blue shifts of 4 wavelengths of which the transmittance is equal to 50 (T50) are respectively less than 45nm, less than 70nm, less than 97nm and less than 98nm, and the film layers are high-refractive-index silicon hydroxide (Si: OH) or high refractive index silicon hydrogen nitride (Si: NH) and low refractive index silicon oxide (SiO.2) Or low-refractive-index silicon hydroxide (SiOH) or low-refractive-index silicon nitride (SiN), and the problems of distance detection, infrared somatosensory recognition and 3D imaging recognition of a near-infrared optical system are solved.
The object of the invention can be achieved by the following exemplary technical solutions:
a near-infrared dual-waveband band-pass filter comprises a substrate, a dual-band-pass film system arranged on one side of the substrate and an AR film system arranged on the other side of the substrate; the double-band-pass film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer from inside to outside, and the outermost layer of the low-refractive-index film layers; the AR film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer from inside to outside, and the AR film layer is the outermost layer of the low-refractive-index film layers; wherein,
wherein, the film system structure of the double-belt through film system is G | LHL & LHL | A; the structure of the film system of the AR film system is G | LHLHLHLHL | A; h in the film system structure of the double-band-pass film system and the AR film system represents 1 high-refractive-index film layer with basic thickness, and L represents 1 low-refractive-index film layer with basic thickness; the base thickness of 1H or 1L corresponds to 1/4 optical thickness of the film at the reference wavelength;
wherein the refractive index of the low-refractive-index film layer in the range of 800-2000nm is lower than 3, and the extinction coefficient is less than 0.0005; the refractive index of the material of the high refractive index film layer in the range of 800-2000nm is larger than 3.2, and the extinction coefficient is smaller than 0.0005.
Further, the refractive index of the low-refractive-index film layer in the range of 1100-2000nm is less than 2.5, and the extinction coefficient is less than 0.0003; the refractive index of the high refractive index film layer in the range of 1100-2000nm is more than 3.3, and the extinction coefficient is less than 0.00006.
Further, the low-refractive-index film layer is low-refractive-index silicon oxide or low-refractive-index silicon hydroxide or low-refractive-index silicon nitride, and the high-refractive-index film layer of the double band-pass film system is high-refractive-index silicon hydroxide or high-refractive-index silicon nitride.
Further, the membrane system structure of the double-band-pass membrane system is
G0.73 (0.5LH0.5L) ^6&2.3(0.5LH0.5L) ^ 6A, and the central wavelength of the transition band is 960 nm; 6 in the 0.73(0.5LH0.5L) ^6 is the cycle number of the basic film stack 0.5LH0.5L, and 6 in the 2.3(0.5LH0.5L) ^6 is the cycle number of the basic film stack 0.5 LH0.5L; the reference wavelength of the membrane system of the double-band-pass membrane system is 934 nm;
the membrane system structure of the AR membrane system is
G |10.67L0.29H1.4L1.14H0.54L3.41H0.39L1.27H2.44L | A, and the central wavelength of the transition band is 778 nm; in the film system structure of the double band-pass film system and the AR film system, 0.5H represents 0.5 high-refractive-index film layers with basic thicknesses, and the reference wavelength of the AR film system is 563 nm.
Further, the double-band-pass film is coated by a magnetron sputtering method, and the AR film is coated by magnetron sputtering, vacuum evaporation coating, plasma auxiliary process or heating process; the low-refractive-index film layer of the AR film system is made of silicon oxide or magnesium fluoride; the high-refractive-index film layer is made of silicon hydroxide, silicon nitride hydride, trititanium pentoxide, niobium oxide, tantalum oxide and hafnium oxide.
Further, TFC software, Macleod software or Optilayer software is adopted to change the physical thicknesses of the film layers of the AR film system and the dual-band-pass film system, so that the band-pass range of the near-infrared dual-band-pass filter is changed.
Further, the method comprises
Step S01, putting the cleaned substrate into a low vacuum chamber and vacuumizing to below 5.0E-0 Pa;
step S02, the substrate is carried into a high vacuum chamber and vacuumized to below 7.0E-04 pa;
step S03, bombarding one side surface of the substrate by plasma emitted by the radio frequency source;
step S04, depositing a double-band-pass film system on the surface of one side of the substrate by adopting a magnetron sputtering method, wherein the double-band-pass film system comprises a low-high refractive index film layer and a high-low refractive index film layer which are alternately deposited layer by layer and is the outermost layer of the low-refractive index film layer;
step S05, putting the plated clean single-sided substrate into a low-vacuum chamber and vacuumizing to below 5.0E-0 Pa;
step S06, the substrate is carried into a high vacuum chamber and vacuumized to below 7.0E-04 pa;
step S07, bombarding the other side surface of the substrate by plasma emitted by the radio frequency source;
step S08, depositing an AR film system on the surface of the other side of the substrate by adopting a magnetron sputtering method, wherein the AR film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer and is the outermost layer of the low-refractive-index film layers;
and step S09, naturally cooling the substrate to room temperature to obtain the double band-pass filter.
Further, the low-refractive-index film layer is low-refractive-index silicon oxide, and the high-refractive-index film layer is high-refractive-index silicon hydroxide; the step S04 includes:
step S41, depositing a low refractive index film, starting the target and the radio frequency oxidation source to work, wherein the working gas Ar flow of the target is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and O is2The flow is 5-400sccm, the power of the sputtering source is 1-12 kw, the power of the radio-frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the silicon oxide film layer is 0.2-1.5 nm/s; and bombarding the surface of the target material by using gas, and depositing a low-refractive-index film layer on the surface of the substrate under the action of plasma of the radio-frequency oxidation source.
Step S42, depositing a high refractive index film, starting the target and the radio frequency oxidation source to work, wherein the working gas Ar flow of the target is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and H2The flow rate is 10-120sccm, O2Or N2The flow rate is 5-100 sccm; the power of a sputtering source is 1-12 kw, the power of a radio frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the high-refractive-index film layer is 0.2-1.5 nm/s; the mixed gas bombards the surface of the target material, and a high-refractive-index film layer is deposited under the action of plasma of a radio-frequency oxidation source.
Step S43, looping steps S41-S42 in this manner until the last second tier;
step S44, repeat step S41 to complete the last layer.
Further, the step S08 includes:
step S81, depositing a low-refractive-index silicon oxide film layer, starting the target and the radio-frequency oxidation source to work, wherein the working gas Ar flow of the target is 30-400sccm, the working gas Ar flow of the radio-frequency oxidation source is 50-800sccm, and O is2The flow is 5-400sccm, the power of a sputtering source is 1-12 kw, the power of a radio-frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the low-refractive-index silicon oxide film layer is 0.2-1.5 nm/s; and bombarding the surface of the target material by using gas, and depositing a low-refractive-index film layer on the surface of the substrate under the action of plasma of the radio-frequency oxidation source.
Step S82, depositing a high refractive index silicon hydroxide film, starting the target material and the radio frequency oxidation source to work, wherein the flow of the working gas Ar of the target material is 30-400sccm,the Ar flow of the working gas of the radio frequency oxidation source is 50-800sccm, H2The flow is 10-120sccm, the power of a sputtering source is 1-12 kw, the power of a radio frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the high-refractive-index hydroxide film layer is 0.2-1.5 nm/s;
step S83, looping steps S81-S82 in this manner until the last second tier;
step S84, repeat S81 to complete the last layer.
Furthermore, the near-infrared dual-band bandpass filter has high transmittance in the dual-band ranges of 1000-1135nm and 1370-1570nm, and simultaneously has cut-off effects in the ranges of 350-960nm, 1190-1290nm and 1670-2000 nm.
Further, the near-infrared dual-band-pass filter has the transmittance equal to 4 wavelength blue shifts of 50 positions (T50) respectively smaller than 18nm, smaller than 25nm, smaller than 33nm and smaller than 33nm at an angle of 0-30 degrees, and has the transmittance equal to 50 positions (T50) respectively smaller than 45nm, smaller than 70nm, smaller than 97nm and smaller than 98nm at an angle of 0-60 degrees.
Compared with the prior art, the invention has the outstanding and beneficial technical effects that:
1. the invention can meet the requirement of high transmissivity characteristic in a dual-waveband range within a band-pass range of 800nm-2000 nm; for example, the optical fiber has high transmittance (> 95%) in the near infrared 1135nm band, 1370 1570nm band and low transmittance (< 5%) in the 350 960nm band, 1190 1290nm band and 1670 + 2000nm band, and the characteristic forms a dual-band-pass filter, compared with a conventional filter, the optical fiber can simultaneously transmit more optical signals, reduce the interference of optical surface scattering light to the signals, and improve the infrared detection signal-to-noise ratio, thereby improving the target recognition capability of the infrared detection device and the imaging definition.
2. The invention meets the light transmittance performance of a large angle of 0-60 degrees, the transmittance is equal to 50 at an angle of 0-30 degrees, 4 wavelength blue shifts from short wave to long wave of the position (T50) are respectively less than 18nm, less than 25nm, less than 33nm and less than 33nm, the transmittance is equal to 50 at an angle of 0-60 degrees, 4 wavelength blue shifts from short wave to long wave of the position (T50) are respectively less than 45nm, less than 70nm, less than 97nm and less than 98nm, and the angular insensitivity is better; the wide-angle infrared signal detection capability can be improved, and more optical signals can be received.
3. The preparation method is relatively simple, adopts magnetron sputtering coating, adopts silicon and the compound thereof as the film material, fills different gases to form the compound of various materials, has simple preparation process and high process stability, and can be produced in large batch.
Drawings
FIG. 1 is a flow chart of the preparation process in the first example.
FIG. 2 is the transmission curves of 0 deg. 700 and 1800nm in the first embodiment.
FIG. 3 is a transmission curve of 0-60 300-2000nm in the first embodiment.
Detailed Description
The following is a specific embodiment of the present invention and the following figures are further provided to describe the technical solution of the present invention, but the present invention is not limited to these embodiments, and the bandwidth of the dual band pass can be in the range of 20nm to 500nm, and the wavelength red shift or blue shift can be implemented by adjusting the thickness of the designed film.
The first embodiment is as follows:
a near-infrared dual-waveband band-pass filter comprises a substrate, a dual-band-pass film system arranged on one side of the substrate, and an AR film system arranged on the other side of the substrate; the double-band-pass film system comprises a low-refractive-index film layer, a high-refractive-index film layer and an outermost layer, wherein the low-refractive-index film layer and the high-refractive-index film layer are alternately deposited layer by layer from inside to outside, and the outermost layer is the low-refractive-index film layer. The AR film system includes low refractive index film layers and high refractive index film layers alternately deposited layer by layer from inside to outside, and is the outermost layer of the low refractive index film layers. The low refractive index film is a silicon oxide film layer; the high-refractive-index film layer is a silicon hydroxide film layer. The low-refractive-index film layer is low-refractive-index silicon oxide (SiO2) or low-refractive-index silicon hydroxide (SiOH) or low-refractive-index silicon nitride (SiN), the preferable low-refractive-index film layer is low-refractive-index silicon oxide (SiO2), the high-refractive-index film layer is high-refractive-index silicon hydroxide (Si: OH) or high-refractive-index silicon hydrogen nitride (Si: NH), and the preferable high-refractive-index film layer is a silicon hydroxide (Si: OH) film layer.
The low-refractive-index film layer is low-refractive-index silicon oxide (SiO2) or low-refractive-index silicon hydroxide (SiOH) or low-refractive-index silicon nitride (SiN), the refractive indexes of the low-refractive-index materials are all lower than 3 within the range of 800-2000nm, the extinction coefficients are all lower than 0.0005, the refractive indexes are all lower than 2.5 within the range of 1100-2000nm, and the extinction coefficients are lower than 0.0003. The preferable low refractive index is a low refractive index silicon oxide (SiO2) film layer, and the high refractive index film layer is high refractive index silicon hydroxide (Si: OH) or high refractive index silicon hydrogen nitride (Si: NH); the refractive indexes of the high-refractive-index materials are all larger than 3.2 within the range of 800-2000nm, the refractive indexes of the materials are all larger than 3.3 within the range of 0.005,1100-2000nm, the extinction coefficients are all smaller than 0.00006, and the preferred materials are high-refractive-index silicon hydroxide (Si: OH) film layers. The unit nm described in this embodiment is simply the unit of the wavelength of light.
The thickness of the glass substrate is 0.3mm, including but not limited to substrate thickness of 0.1mm to 10mm and substrate size. The material of the glass substrate comprises glass, quartz, sapphire or silicate optical glass.
The double-belt through film system comprises a low-refractive-index silicon oxide film layer and a high-refractive-index silicon hydroxide film layer which are alternately deposited layer by layer from inside to outside, and is the outermost layer of the low-refractive-index silicon oxide film layer, the film system structure is G | 0.73(0.5LH0.5L) ^6&2.3(0.5LH0.5L) ^6 | A, 6 in the 0.73(0.5LH0.5L) ^6 is the periodicity of 0.5LH0.5L of the basic film stack, and 6 in the 2.3(0.5LH0.5L) ^6 is the periodicity of 0.5LH0.5L of the basic film stack; the central wavelength of the transition band is 960nm, wherein H represents 1 basic thickness of high refractive index silicon hydroxide layer, and L represents 1 basic thickness of low refractive index silicon oxide layer. 6 is the cycle number of 0.5LH0.5L of the basic membrane stack. The base thickness of 1H or 1L corresponds to 1/4 optical thickness of the film at the reference wavelength, which is 934nm for the film system. The structure of the film system is optimized by adopting TFC software, Macleod software or Optilayer software, the central wavelength of a transition band is 974nm, and parameters of each film layer of the double-band-pass film system are obtained as shown in Table 1, wherein the film layer with the number of layers of 1 is deposited on a glass substrate, and the film layer with the number of layers of 35 is the outermost layer of the double-band-pass film system. 0.73(0.5LH0.5L) ^6&2.3(0.5LH0.5L) ^6 is the basic film stack, and in the actual operation process, after the film stack is optimized, the number of layers can be reduced or increased, and the combination of the number of layers generally occurs, and the combination occurs in two adjacent layers and is the same material.
TABLE 1 double band Membrane System
The AR film system comprises
The low-refractive-index silicon oxide film layer and the high-refractive-index silicon hydroxide film layer are alternately deposited from inside to outside layer by layer, and the outermost layer of the low-refractive-index silicon oxide film layer is formed. The film system structure comprises
G |10.67L0.29H1.4L1.14H0.54L3.41H0.39L1.27H2.44L | A, the central wavelength of the transition band is 778nm, wherein H represents 1 basic thickness of high refractive index silicon hydroxide layer, 0.5H represents 0.5 basic thickness of high refractive index silicon hydroxide layer, and L represents 1 basic thickness of low refractive index silicon oxide layer. The base thickness of 1H or 1L corresponds to 1/4 optical thickness of the film at the reference wavelength, 563nm for the film system. The parameters of each film layer are shown in table 2, wherein the film layer with the number of layers 1 is deposited on the substrate, and the film layer with the number of layers 9 is the outermost layer of the AR film system.
TABLE 2 AR film series
The double-band-pass film system and the AR film system are coated by a magnetron sputtering method, the alternative AR film system can be realized by vacuum evaporation coating, a plasma auxiliary process or a heating process, the low-refractive-index material is silicon oxide or magnesium fluoride material, and the high-refractive-index material is conventional coating materials such as trititanium pentoxide, niobium oxide, tantalum oxide, hafnium oxide and the like.
As shown in fig. 1-3, a method for preparing a near-infrared dual-bandpass filter is completed in a vacuum sputter coating machine by the following steps:
s01, putting the cleaned substrate into a clean low-vacuum chamber and vacuumizing to be below 5.0E-0 Pa;
s02, moving the substrate into a high vacuum chamber and vacuumizing to be below 7.0E-04 pa;
s03, bombarding the surface of the substrate for 1-10 min by using plasma emitted by a radio frequency source, wherein the power of the radio frequency source is 0.5-4.5 kw, the working gas of the radio frequency source is Ar, and the gas flow is 50-800 sccm. The target material gas is Ar gas, and the gas flow is 30-400sccm per pair of target materials.
Step S04, depositing a double-bandpass film system (DBP) on the surface of one side of the substrate by adopting a magnetron sputtering method, wherein the double-bandpass film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer and is the outermost layer of the low-refractive-index film layers;
the step S04 includes the steps of,
step S41, depositing a low refractive index silicon oxide film layer, bombarding the surface of the target material with gas, depositing a silicon oxide film layer on the surface of the substrate under the action of the plasma of the radio frequency oxidation source, and starting the target material and the radio frequency oxidation source to work, wherein the working gas Ar flow of the target material is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and O is2The flow is 5-400sccm, the power of a sputtering source is 1-12 kw, the power of a radio frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the low-refractive-index silicon oxide film layer is 0.2-1.5 nm/s; wherein the preferable Ar gas flow is 60-200sccm, the working gas Ar flow of the radio frequency oxidation source is 50-480sccm, and O2The flow rate is 100-300sccm, the sputtering source power is 5-10 kw, the RF oxidation source power is 2-4kw, and the silicon oxide deposition rate is 0.3nm/s-1.2 nm/s.
Step S42, depositing a high refractive index silicon hydroxide or high refractive index silicon nitride film, bombarding the surface of the target with the mixed gas, and depositing a high refractive index silicon hydroxide or high refractive index silicon nitride film under the action of the radio frequency oxidation source plasma, wherein the preferred high refractive index silicon hydroxideStarting a target material and a radio frequency oxidation source to work, wherein the working gas Ar flow of the target material is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and H2The flow rate is 10-120sccm, the flow rate of O2 or N2 is 5-100sccm, the power of a sputtering source is 1-12 kw, the power of a radio frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the high refractive index silicon hydroxide film layer is 0.2-1.5 nm/s; the preferable working Ar flow rate of the target is 60-200sccm, the working gas Ar flow rate of the radio frequency oxidation source is 50-480sccm, the H2 flow rate is 10-120sccm, the power of the sputtering source is 5-10 kw when the O2 flow rate is 5-50sccm, the power of the radio frequency oxidation source is 0.5-4 kw, and the deposition rate of the high-refractive-index silicon hydroxide film layer is 0.2-0.7 nm/s;
step S43, looping steps S41-S42 in this manner until the last second tier;
step S44, repeat step S41 to complete the last layer.
Step S04 completes the deposition of the double band-pass film system.
S05, putting the cleaned single-sided substrate into a clean vacuum chamber and vacuumizing to be below 5.0E-0 Pa.
S06, moving the substrate into a high vacuum chamber and vacuumizing to be below 7.0E-04 pa;
and S07, bombarding the surface of the substrate for 1-10 min by using plasma emitted by a radio frequency source, wherein the power of the radio frequency source is 0.5-4.5 kw, the working gas of the radio frequency source is Ar, and the gas flow is 50-800 sccm. The target gas is Ar, and the gas flow of Ar is 30-400sccm per pair of targets;
step S08, depositing an AR film system on the surface of the other side of the substrate by adopting a magnetron sputtering method, wherein the AR film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer and is the outermost layer of the low-refractive-index film layers;
step S81, depositing a low refractive index silicon oxide film layer, bombarding the surface of the target material with gas, depositing a silicon oxide film layer on the surface of the substrate under the action of the plasma of the radio frequency oxidation source, and starting the target material and the radio frequency oxidation source to work, wherein the working gas Ar flow of the target material is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and O is2The flow is 5-400sccm, the power of the sputtering source is 1-12 kw, the power of the radio-frequency oxidation source is 0.5-4.5 kw,the deposition rate of the low-refractive-index silicon oxide film layer is 0.2-1.5 nm/s; wherein the preferable Ar gas flow is 60-200sccm, the working gas Ar flow of the radio frequency oxidation source is 50-480sccm, and O2The flow rate is 100-300sccm, the sputtering source power is 5-10 kw, the radio frequency oxidation source power is 2-4kw, and the low refractive index silicon oxide deposition rate is 0.3nm/s-1.2 nm/s.
And step S82, depositing a high-refractive-index silicon hydroxide or high-refractive-index silicon nitride film, bombarding the surface of the target by the mixed gas, and depositing a high-refractive-index silicon hydroxide or high-refractive-index silicon nitride film under the action of the radio-frequency oxidation source plasma, wherein the target and the radio-frequency oxidation source are started to work by the preferred high-refractive-index silicon hydroxide material. Wherein the flow rate of the working gas Ar of the target material is 30-400sccm, the flow rate of the working gas Ar of the radio frequency oxidation source is 50-800sccm, the flow rate of H2 is 10-120sccm, the flow rate of O2 or N2 is 5-100sccm, the power of the sputtering source is 1kw-12kw, the power of the radio frequency oxidation source is 0.5kw-4.5kw, and the deposition rate of the high-refractive-index silicon hydroxide film layer is 0.2-1.5 nm/s; the preferable working Ar flow rate of the target is 60-200sccm, the working gas Ar flow rate of the radio frequency oxidation source is 50-480sccm, the H2 flow rate is 10-120sccm, the power of the sputtering source is 5-10 kw when the O2 flow rate is 5-50sccm, the power of the radio frequency oxidation source is 0.5-4 kw, and the deposition rate of the high refractive index silicon hydroxide film layer is 0.2-0.7 nm/s.
Step S83, looping steps S81-S82 in this manner until the last second tier;
step S84, repeat S81 to complete the last layer.
Step S08 completes the deposition of the AR film system.
And S09, naturally cooling the substrate to room temperature to obtain the near-infrared double-bandpass filter.
S10, performing the following performance tests on the optical filter: the transmittance spectrum of the filter is measured by using a Cary 7000 general type spectrophotometer of Agilent company in usa, as shown in fig. 1, the filter has high transmittance (> 95%) in the near infrared 1020-and 1135nm, 1370-and 1570nm bands, and has low transmittance (< 5%) in the 350-and 960nm, 1190-and 1290nm and 1670-and 2000nm bands, the average transmittance at 0 degree incidence angle of the filter in the 1000-and-1575 nm band is 96.98%, the average transmittance at 0 degree incidence angle of the filter in the 1370-and-1570 nm band is 98.68%, the average transmittance at 0 degree incidence angle of the filter in the 700-and 960nm band is 0.04%, the average transmittance at 0 degree incidence angle of the 1190-and 1290nm band is 1.13%, and the average transmittance at 0 degree incidence angle of the filter in the 1670-and 2000nm band is 0.85%.
1. The invention can meet the requirements of band-pass range between near infrared 800nm and 2000nm and high transmissivity characteristic in a dual-waveband range; for example, the two-band-pass filter with the characteristics has high transmittance (> 95%) in the near-infrared wavelength bands of 1000-.
2. The invention meets the light transmittance performance of a large angle of 0-60 degrees, the transmittance is equal to 50 at an angle of 0-30 degrees, 4 wavelength blue shifts from short wave to long wave of the position (T50) are respectively less than 18nm, less than 25nm, less than 33nm and less than 33nm, the transmittance is equal to 50 at an angle of 0-60 degrees, 4 wavelength blue shifts from short wave to long wave of the position (T50) are respectively less than 45nm, less than 70nm, less than 97nm and less than 98nm, and the angular insensitivity is better; the detection capability of the large-angle infrared signals can be improved. More optical signals are received.
3. The preparation method is relatively simple, adopts magnetron sputtering coating, adopts silicon and the compound thereof as the film material, fills different gases to form the compound of various materials, has simple preparation process and high process stability, and can be produced in large batch.
The optical filter prepared by the preparation method meets the requirement of 700nm-2000nm near infrared on high transmissivity in a dual-waveband range; the optical filter has high transmittance (> 95%) in the spectral bands of near infrared 1002-1140nm and 1368-1595nm, and is cut off (< 5%) in other bands to form a dual-band-pass filter, so that compared with a conventional filter, more optical signals can be transmitted simultaneously, the interference of optical surface scattering light on the signals is reduced, the infrared detection signal-to-noise ratio is improved, the target identification capability of an infrared detection device is improved, and the imaging definition is improved; the light transmittance of a large angle of 0-60 degrees is met, and the angle insensitivity is good; the imaging capability of the infrared optical system can be improved. In addition, the preparation method is relatively simple, the film layer material is silicon and the compound thereof, and different gases are filled into the film layer material to form the compound of various materials, so that the double-bandpass optical filter meeting the near-infrared imaging capability can be prepared.
The present invention is not limited to the two mentioned herein as far as the optical properties of the material herein are achieved, and is within the scope of the claims.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (11)
1. A near-infrared dual-band-pass filter is characterized in that: comprises a substrate, a double-belt through membrane system arranged on one side of the substrate and an AR membrane system arranged on the other side of the substrate; the double-band-pass film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer from inside to outside, and the outermost layer of the low-refractive-index film layers; the AR film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer from inside to outside, and the AR film layer is the outermost layer of the low-refractive-index film layers;
wherein, the film system structure of the double-belt through film system is G | LHL & LHL | A; the structure of the film system of the AR film system is G | LHLHLHLHL | A; h in the film system structure of the double-band-pass film system and the AR film system represents 1 high-refractive-index film layer with basic thickness, and L represents 1 low-refractive-index film layer with basic thickness; the base thickness of 1H or 1L corresponds to 1/4 optical thickness of the film at the reference wavelength;
wherein the refractive index of the low-refractive-index film layer in the range of 800-2000nm is lower than 3, and the extinction coefficient is less than 0.0005; the refractive index of the material of the high refractive index film layer in the range of 800-2000nm is larger than 3.2, and the extinction coefficient is smaller than 0.0005.
2. The near-infrared dual-band bandpass filter according to claim 1, wherein: the refractive index of the low-refractive-index film layer in the range of 1100-2000nm is less than 2.5, and the extinction coefficient is less than 0.0003; the refractive index of the high refractive index film layer in the range of 1100-2000nm is more than 3.3, and the extinction coefficient is less than 0.00006.
3. A near-infrared dual band bandpass filter according to claim 1 or 2, characterized in that: the low-refractive-index film layer is low-refractive-index silicon oxide or low-refractive-index silicon hydroxide or low-refractive-index silicon nitride, and the high-refractive-index film layer of the double band-pass film system is high-refractive-index silicon hydroxide or high-refractive-index silicon nitride.
4. The near-infrared dual-band bandpass filter according to claim 1, wherein: the film system structure of the double-band-pass film system is G | 0.73(0.5LH0.5L) ^6&2.3(0.5LH0.5L) ^6 | A, and the central wavelength of a transition band is 960 nm; 6 in the 0.73(0.5LH0.5L) ^6 is the cycle number of the basic film stack 0.5LH0.5L, and 6 in the 2.3(0.5LH0.5L) ^6 is the cycle number of the basic film stack 0.5 LH0.5L; the reference wavelength of the membrane system of the double-band-pass membrane system is 934 nm;
the film system structure of the AR film system is G |10.67L0.29H1.4L1.14H0.54L3.41H0.39L 1.27.27 1.27H2.44L | A, the central wavelength of the transition band is 778 nm; in the film system structure of the double band-pass film system and the AR film system, 0.5H represents 0.5 high-refractive-index film layers with basic thicknesses, and the reference wavelength of the AR film system is 563 nm.
5. The near-infrared dual-band bandpass filter according to claim 1, wherein: the double-band-pass film system is coated by a magnetron sputtering method, and the AR film system is coated by a magnetron sputtering method, a vacuum evaporation coating method, a plasma auxiliary process or a heating process; the low-refractive-index film layer of the AR film system is made of silicon oxide or magnesium fluoride; the high-refractive-index film layer is made of silicon hydroxide, silicon nitride hydride, trititanium pentoxide, niobium oxide, tantalum oxide and hafnium oxide.
6. The near-infrared dual-band bandpass filter according to claim 1, wherein: and adopting TFC software, Macleod software or Optilayer software to change the physical thicknesses of the film layers of the AR film system and the dual-band-pass film system so as to change the band-pass range of the near-infrared dual-band-pass filter.
7. A method for preparing a near-infrared dual-band-pass filter is realized in a vacuum sputtering coating machine and is characterized in that: the method comprises
Step S01, putting the cleaned substrate into a low vacuum chamber and vacuumizing to below 5.0E-0 Pa;
step S02, the substrate is carried into a high vacuum chamber and vacuumized to below 7.0E-04 pa;
step S03, bombarding one side surface of the substrate by plasma emitted by the radio frequency source;
step S04, depositing a double-bandpass film system (DBP) on the surface of one side of the substrate by adopting a magnetron sputtering method, wherein the double-bandpass film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer and is the outermost layer of the low-refractive-index film layers;
step S05, putting the plated clean single-sided substrate into a low-vacuum chamber and vacuumizing to below 5.0E-0 Pa;
step S06, the substrate is carried into a high vacuum chamber and vacuumized to below 7.0E-04 pa;
step S07, bombarding the other side surface of the substrate by plasma emitted by the radio frequency source;
step S08, depositing an AR film system on the surface of the other side of the substrate by adopting a magnetron sputtering method, wherein the AR film system comprises low-refractive-index film layers and high-refractive-index film layers which are alternately deposited layer by layer and is the outermost layer of the low-refractive-index film layers;
and step S09, naturally cooling the substrate to room temperature to obtain the double band-pass filter.
8. The method of claim 7, wherein the low refractive index film layer is a low refractive index silicon oxide, and the high refractive index film layer is a high refractive index silicon hydroxide; the step S04 includes:
step S41, performing low refractive index film deposition: starting the target material and the radio frequency oxidation source, wherein the working gas Ar flow of the target material is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and O2The flow is 5-400sccm, the power of a sputtering source is 1-12 kw, the power of a radio frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the low-refractive-index film layer is 0.2-1.5 nm/s; and bombarding the surface of the target material by using gas, and depositing a low-refractive-index film layer on the surface of the substrate under the action of plasma of the radio-frequency oxidation source.
Step S42, depositing a high refractive index film layer: starting the target material and the radio frequency oxidation source to work, wherein the working gas Ar flow of the target material is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, H2The flow rate is 10-120sccm, O2Or N2The flow rate is 5-100 sccm; the power of a sputtering source is 1-12 kw, the power of a radio frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the high-refractive-index film layer is 0.2-1.5 nm/s; the mixed gas bombards the surface of the target material, and a high-refractive-index film layer is deposited under the action of plasma of a radio-frequency oxidation source.
Step S43, looping steps S41-S42 in this manner until the last second tier;
step S44, repeat step S41 to complete the last layer.
9. The method of claim 8, wherein the step S08 includes:
step S81, depositing a low refractive index film, starting the target and the radio frequency oxidation source to work, wherein the working gas Ar flow of the target is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and O2The flow is 5-400sccm, the power of a sputtering source is 1-12 kw, the power of a radio-frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the low-refractive-index silicon oxide film layer is 0.2-1.5 nm/s; bombarding the surface of the target material by gas under the action of plasma of a radio frequency oxidation sourceAnd a low-refractive-index film layer is deposited on the surface of the substrate.
Step S82, depositing a high refractive index film, starting the target and the radio frequency oxidation source to work, wherein the working gas Ar flow of the target is 30-400sccm, the working gas Ar flow of the radio frequency oxidation source is 50-800sccm, and H2The flow is 10-120sccm, the power of a sputtering source is 1-12 kw, the power of a radio frequency oxidation source is 0.5-4.5 kw, and the deposition rate of the high-refractive-index silicon hydroxide film layer is 0.2-1.5 nm/s; the mixed gas bombards the surface of the target material, and a high-refractive-index film layer is deposited under the action of plasma of a radio-frequency oxidation source.
Step S83, looping steps S81-S82 in this manner until the last second tier;
step S84, repeat S81 to complete the last layer.
10. The method as claimed in claim 9, wherein the near-infrared dual-band bandpass filter has high transmittance in the dual-band ranges of 1000-1135nm and 1370-1570nm, and has cut-off effect in the ranges of 350-960nm and 1190-1290nm and 1670-2000 nm.
11. The method of claim 9, wherein the near-infrared dual band pass filter has a transmittance equal to 50 at 0-30 degrees with 4 wavelength blue shifts of less than 18nm, less than 25nm, less than 33nm, and 4 wavelength blue shifts equal to 50 at 0-60 degrees (T50) of less than 45nm, less than 70nm, less than 97nm, and less than 98nm, respectively.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021108949062 | 2021-08-05 | ||
| CN202110894906 | 2021-08-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113900171A true CN113900171A (en) | 2022-01-07 |
| CN113900171B CN113900171B (en) | 2024-10-18 |
Family
ID=79192101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111197309.0A Active CN113900171B (en) | 2021-08-05 | 2021-10-14 | Near-infrared dual-band bandpass filter and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113900171B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114637065A (en) * | 2022-02-18 | 2022-06-17 | 湖南麓星光电科技有限公司 | High-damage-threshold infrared double-laser-channel optical filter and preparation method thereof |
| CN115166886A (en) * | 2022-06-14 | 2022-10-11 | 浙江晶驰光电科技有限公司 | Infrared cut-off filter with ultralow angle offset effect |
| CN115327687A (en) * | 2022-06-24 | 2022-11-11 | 北京华北莱茵光电技术有限公司 | Near-infrared band-pass filter and preparation method thereof |
| WO2023065627A1 (en) * | 2021-10-20 | 2023-04-27 | 信阳舜宇光学有限公司 | Optical filter and manufacturing method therefor |
| CN117512527A (en) * | 2023-11-10 | 2024-02-06 | 星际光(上海)实业有限公司 | Dielectric film reflector and preparation process thereof |
| CN118166318A (en) * | 2024-03-13 | 2024-06-11 | 福源(中山)光电科技有限公司 | Preparation method of black film, black film and electronic product |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040240093A1 (en) * | 2001-10-18 | 2004-12-02 | Masato Yoshikawa | Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film |
| CN204462436U (en) * | 2015-03-17 | 2015-07-08 | 苏州鼎旺科技有限公司 | A kind of high rigidity two waveband filter sheet structure |
| CN108897085A (en) * | 2018-08-06 | 2018-11-27 | 信阳舜宇光学有限公司 | Optical filter and infrared image sensing system comprising the optical filter |
| CN111552017A (en) * | 2020-05-26 | 2020-08-18 | 苏州京浜光电科技股份有限公司 | Novel preparation method of double-bandpass optical filter |
| CN112255721A (en) * | 2020-11-12 | 2021-01-22 | 深圳市美思先端电子有限公司 | Double-bandpass filter and manufacturing method thereof |
| CN113433607A (en) * | 2021-05-28 | 2021-09-24 | 浙江晶驰光电科技有限公司 | Double-bandpass optical filter and manufacturing method thereof |
-
2021
- 2021-10-14 CN CN202111197309.0A patent/CN113900171B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040240093A1 (en) * | 2001-10-18 | 2004-12-02 | Masato Yoshikawa | Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film |
| CN204462436U (en) * | 2015-03-17 | 2015-07-08 | 苏州鼎旺科技有限公司 | A kind of high rigidity two waveband filter sheet structure |
| CN108897085A (en) * | 2018-08-06 | 2018-11-27 | 信阳舜宇光学有限公司 | Optical filter and infrared image sensing system comprising the optical filter |
| CN111552017A (en) * | 2020-05-26 | 2020-08-18 | 苏州京浜光电科技股份有限公司 | Novel preparation method of double-bandpass optical filter |
| CN112255721A (en) * | 2020-11-12 | 2021-01-22 | 深圳市美思先端电子有限公司 | Double-bandpass filter and manufacturing method thereof |
| CN113433607A (en) * | 2021-05-28 | 2021-09-24 | 浙江晶驰光电科技有限公司 | Double-bandpass optical filter and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023065627A1 (en) * | 2021-10-20 | 2023-04-27 | 信阳舜宇光学有限公司 | Optical filter and manufacturing method therefor |
| CN114637065A (en) * | 2022-02-18 | 2022-06-17 | 湖南麓星光电科技有限公司 | High-damage-threshold infrared double-laser-channel optical filter and preparation method thereof |
| CN114637065B (en) * | 2022-02-18 | 2024-02-27 | 湖南麓星光电科技有限公司 | High-damage-threshold infrared dual-laser-channel filter and preparation method thereof |
| CN115166886A (en) * | 2022-06-14 | 2022-10-11 | 浙江晶驰光电科技有限公司 | Infrared cut-off filter with ultralow angle offset effect |
| CN115166886B (en) * | 2022-06-14 | 2024-02-09 | 浙江晶驰光电科技有限公司 | Infrared cut-off filter with ultralow angle offset effect |
| CN115327687A (en) * | 2022-06-24 | 2022-11-11 | 北京华北莱茵光电技术有限公司 | Near-infrared band-pass filter and preparation method thereof |
| CN117512527A (en) * | 2023-11-10 | 2024-02-06 | 星际光(上海)实业有限公司 | Dielectric film reflector and preparation process thereof |
| CN118166318A (en) * | 2024-03-13 | 2024-06-11 | 福源(中山)光电科技有限公司 | Preparation method of black film, black film and electronic product |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113900171B (en) | 2024-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113900171A (en) | Near-infrared dual-waveband band-pass filter and preparation method thereof | |
| US12055739B2 (en) | Optical filter and sensor system | |
| WO2020015103A1 (en) | 3d identification filter | |
| CN111736252B (en) | Near-infrared transmission optical filter and preparation method thereof | |
| CN113433607B (en) | Double-bandpass filter and manufacturing method thereof | |
| CN106772747B (en) | Optical film and manufacturing method thereof | |
| CN110133783B (en) | Manufacturing method of infrared narrow-band filter | |
| CN104155712A (en) | Near-infrared filter for optical communication | |
| CN111796353A (en) | Optical filter and method of forming the same | |
| CN112255721A (en) | Double-bandpass filter and manufacturing method thereof | |
| CN111736251B (en) | Intermediate infrared transmission optical filter and preparation method thereof | |
| CN111736250B (en) | Black film narrowband optical filter and preparation method thereof | |
| CN112226729B (en) | Preparation method of band-pass filter | |
| CN106597591B (en) | Quasi-rectangular narrow-band filter with high cut-off and low ripple | |
| CN113484946A (en) | Narrow-band optical filter for spherical mirror and preparation method thereof | |
| CN214174663U (en) | Double-bandpass optical filter | |
| CN110221368B (en) | Single-element multilayer infrared high-reflection film and preparation method thereof | |
| CN211375107U (en) | Low-haze laminated optical filter film | |
| CN115291314A (en) | Receiving end optical filter, preparation method and combined optical filter | |
| CN115166886A (en) | Infrared cut-off filter with ultralow angle offset effect | |
| TWI855290B (en) | Optical filter and sensor system | |
| CN116953837A (en) | Transmission type metal medium structural color film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |