CN115327687A - Near-infrared band-pass filter and preparation method thereof - Google Patents
Near-infrared band-pass filter and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000007747 plating Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 59
- 230000003287 optical effect Effects 0.000 claims description 43
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 32
- 238000010849 ion bombardment Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 238000001704 evaporation Methods 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 18
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- 239000013078 crystal Substances 0.000 claims description 14
- 238000012544 monitoring process Methods 0.000 claims description 13
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 11
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- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 4
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
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Abstract
The invention discloses a near-infrared band-pass filter and a preparation method thereof, the near-infrared band-pass filter comprises a substrate, and a short-wave-pass filter film and a long-wave-pass filter film which are formed on the surfaces of two sides of the substrate, wherein the film system structure of the filter is as follows: 21^ (0.5L H0.5L) | Al 2 O 3 L (0.5H0.5H) ^35, wherein L is YbF 3 And the film layer is a ZnS film layer. A preparation method of a near-infrared band-pass filter comprises the following steps: plating a short-wave pass filter film on one surface of a substrate; the other surface of the substrate is plated with a long-wave pass filter film. The invention mainly aims at 1.3-2.7 mu m near-infrared band and provides a band-pass filter for simultaneously inhibiting 0.38 mu m-1.1 mu m&The dielectric film coating with the short-wavelength interference energy of 3-4 mu m has the characteristics of high transmissivity, band-pass filtering, good reliability and strong environmental adaptability.
Description
Technical Field
The invention relates to a band-pass filter and a preparation method thereof, in particular to a near-infrared band-pass filter and a preparation method thereof.
Background
In an advanced optical system, films with various functions are often required to be plated on the surface of an optical component, so as to solve the problems of large optical energy loss, low working waveband transmissivity and the like of an uncoated optical component, so as to improve the imaging quality of the optical system and improve the detection precision of the optical component. The band-pass filter film can be used for acquiring light energy of required wave bands and inhibiting the transmission of light of other wave bands, and is an important component of an optical imaging system and a photoelectric detection system. Due to the unique optical characteristics of the band-pass filter membrane, the band-pass filter membrane can be widely applied to natural disasters, resource general investigation, remote sensing systems, infrared cameras, multispectral imaging instruments, spectral analysis and aerospace devices and various military products. Meanwhile, with the development of the laser technology towards high power and high energy, the band-pass filtering film not only needs to meet the high transmittance in the working band, but also needs to meet the key condition of high laser damage resistance threshold. In order to meet the filtering requirement in a specific wavelength range, the importance of designing and preparing a band-pass filter film with excellent performance and meeting the requirement on an infrared optical system or a high-power laser system is remarkable.
Taking an infrared optical system as an example, various applications such as night vision, navigation, detection and the like can be performed. For example, a passive infrared thermal imager performs thermal distribution imaging of a target and a scene by using infrared radiation emitted by the target and a background, and is an indispensable pair of 'eyes' for night vision. The infrared remote sensing device does not depend on the illumination of an external light source, has the characteristics of good concealment, difficulty in electromagnetic interference and the like, and is widely applied to vehicle-mounted, temperature detection and space remote sensing.
Most complete machine systems are composed of an optical lens and a detector, in order to enable the detector to realize detection of a radiation source through the optical lens, the optical lens must complete time and space filtering of optical signals through a protective object space window, a lens, a reflector, an optical stop, an optical filter, a scanning system and the like, and therefore separation of an object space target and a background is achieved in a given proportion and quality. To ensure that the maximum radiant flux of the target is transmitted to the detector, it is necessary to ensure that the loss of radiant energy through the optical lens is minimized.
In order to achieve the above objective at a specific wavelength band, various refractive and reflective elements in an optical lens should ensure as low an absorption rate and a scattering rate as possible for the radiation energy of the operating wavelength band, and at the same time, have as high a transmittance and a reflectance as possible, and should be able to achieve a certain selective spectral power and angular insensitivity as required. While the material selection and the design of the optical parameters of the optical element are reasonable in the optical design process, various properties of the optical film are one of the key parameters. On the other hand, the imaging definition in the system is the most important technical index, and in order to improve the signal-to-noise ratio of the system, reduce the interference of the scattered light of the optical surface to the signal, and enhance the transmitted thermal radiation energy, the infrared optical thin film technology also needs to be applied to the optical system.
To improve the signal-to-noise ratio of the operating spectrum detection, various band-pass filters are often used to improve the ability of the detection device to identify the target. In some special detector designs, in order to simplify the structure of the whole optical system and reduce the load of the whole detector, a special filter is needed, and a band-pass filter coated with an optical thin film is one of the filters.
It is worth noting that the most commonly used band-pass filter film is the atmospheric window with the minimum attenuation for the mid-infrared band of 3.7-4.8 μm, but with the rapid development of new thermal infrared imagers and near-infrared lasers, it is not only necessary to improve the signal-to-noise ratio of the mid-wave infrared photodetectors, but also to provide the filtering requirement for the energy response near the near-infrared band of 1.3-2.7 μm. Compared with a band-pass filter film with a medium wave of 3.7-4.8 mu m, the filter film with a near infrared of 1.3-2.7 mu m has wider passband wave band, and has a plurality of technical difficulties in design, dual-waveband film material selection, positioning control, uniformity, half-wave depression interference inhibition, transmittance improvement and preparation process, especially the passband transmittance is difficult to improve, which restricts the effective improvement of the optical system performance.
Disclosure of Invention
In order to solve the defects of the technology, the invention provides a near-infrared band-pass filter and a preparation method thereof.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a near-infrared band-pass filter comprises a substrate, and a short-wave pass filter film and a long-wave pass filter film which are formed on the surfaces of two sides of the substrate, wherein the film system structure of the short-wave pass filter film is Sub/(0.5L H0.5L) Lambda/Air, m is the periodicity, the film system structure of the long-wave pass filter film is Sub/(0.5H) Lambda/Air, and n is the periodicity;
wherein Sub is a substrate, L is YbF 3 And the film layer is a ZnS film layer.
The zinc sulfide has the transmission wavelength range of 0.38-14 microns, has good transparency in an infrared region, is mature in preparation method, has the advantages of high uniformity, high compactness, high purity and the like, has good stress matching with various fluoride low-refractive-index materials, and has good mechanical property and stability when being plated into a film, so that the zinc sulfide can be selected as a high-refractive-index material.
The ytterbium fluoride has a transmission wavelength range of 0.25-14 microns, has good mechanical properties, has good stress matching with zinc sulfide, is not easy to fall off after film formation, has good stability, and can be selected as a low-refractive-index material.
Preferably, the filter substrate is alumina.
Preferably, the film system structure of the short wave pass filter film is Sub/(0.5L H0.5L) ^21/Air, and the reference wavelength is lambda 1 ，λ 1 Is 3200nm. As shown in fig. 1, the calculated short pass transmittance curve is optimized.
Preferably, the film system structure of the long-wave-pass filter film is Sub/(0.5H0.5H) ^35/Air, and the reference wavelength is lambda 2 ，λ 2 At 525nm. As shown in fig. 2, the calculated long-wave pass transmittance curve is optimized.
Preferably, in the short-wave pass filter film, the film layer adjacent to the substrate is the 1 st layer, the outermost layer is the 42 th layer, and the film system structure is as follows:
Sub/1.103H 1.070L 1.055H 1.013L 0.990H 0.989L 1.008H 0.990L 0.978H 0.996L 0.998H 0.986L 0.989H 1.011L 0.999H 1.001L 1.031H 1.093L 1.237H 0.132L 1.306H 1.117L 1.137H 1.123L 1.162H 1.116L 1.161H 1.114L 1.092H 1.091L 1.079H 1.080L 1.091H 1.103L 1.111H 1.137L 1.091H 1.125L 1.112H 1.106L 1.100H 0.551L/Air。
preferably, in the long-wave pass filter film, the film layer adjacent to the substrate is the 1 st layer, the outermost layer is the 70 th layer, and the film system structure is as follows:
Sub/0.771H 1.464L 1.598H 1.175L 0.976H 0.772L 1.260H 0.913L 1.009H 1.001L 1.134H 0.910L 0.911H 1.087L 0.917H 0.982L 0.370H 0.641H 1.188L 1.155H 1.233L 1.364H 1.217L 1.319H 1.231L 1.397H 1.281L 1.221H 1.321L 1.352H 1.379L 1.176H 1.163L 0.597H 0.839H 1.489L 1.746H 1.544L 1.632H 1.650L 1.538H 1.805L 1.544H 1.765L 1.696H 1.642L 1.852H 1.529L 1.675H 1.573L 1.593H 1.998L 0.700H 1.038H 2.194L 2.058H 2.009L 2.310H 2.048L 2.112H 2.370L 1.940H 2.229L 2.381H 1.657L 2.687H 1.845L 1.500H 5.186L 0.005H/Air。
FIG. 3 is a graph of the designed transmittance of 1.3-2.7 micron bandpass filter. As shown in fig. 3, the transmittance in the operating band of 1.3 to 2.7 μm is more than 95%, the transmittance in the reflective region is very low, and the average transmittance is less than 1%. Because the number of the film layers is large, the curve ripple in the permeation area has tiny fluctuation. The slope of the curve transition zone meets the design requirement.
A preparation method of a near-infrared band-pass filter comprises the following steps:
(1) Short wave pass filter film coated on single surface of substrate
a. Cleaning the substrate, placing the substrate in a vacuum chamber, and vacuumizing to 9 × 10 -3 Pa～3×10 -4 Pa；
b. Bombarding the substrate with an ion source for 2-6 min, heating the substrate to 120-170 ℃, and preserving heat for 30-40 min;
c. plating a 1 st film layer, pre-melting ZnS film material, and performing ion bombardment on a substrate by using the pre-melted ZnS film material with the vacuum degree of 9 multiplied by 10 -3 Pa～5×10 -4 Pa, negative high voltage of ion bombardment voltage 90V-130V, and ionization time of 8min-13min;
vapor deposition is carried out by ZnS film material, and the pressure intensity of a vacuum chamber during vapor deposition is 9 multiplied by 10 -3 Pa～2×10 -4 Pa, the evaporation rate is 1.5nm/s-2nm/s, so that ZnS film material ions are deposited on the substrate, and the thickness of the 1 st film layer is determined by adopting a quartz crystal monitoring method;
d. coating the 2 nd film layer to YbF 3 Pre-melting the film material, and using the pre-melted YbF 3 The film material carries out ion bombardment on the substrate with the vacuum degree of 9 multiplied by 10 -3 Pa～2×10 -4 Pa, ion bombardment voltage of 95V-115V negative high voltage, and ionization time of 5min-8min;
using YbF 3 The film material is evaporated, and the pressure of the vacuum chamber is 9 multiplied by 10 during evaporation -3 Pa～2×10 -4 Pa, evaporation rate of 0.7nm/s-1.3nm/s, making YbF 3 Deposition of film material ions on a substrateDetermining the thickness of the 2 nd film layer by adopting a quartz crystal monitoring method;
e. c, repeating the step c and the step d in sequence, and plating a 3 rd to 42 th film layer;
f. placing the optical filter with the 42-layer film layer plated in a vacuum chamber at 180 ℃ for heat preservation for 2 hours, cooling to room temperature, and taking out the optical part with the short-wave-pass filter film plated on one side;
(2) Coating a long-wave pass filter film on the other surface of the substrate
And (e) firstly repeating the steps a-d, then sequentially repeating the steps c and d, plating a 3 rd-70 th film layer, and finally repeating the step f to obtain the optical part with double surfaces plated uniformly.
Preferably, the method further comprises the step of carrying out primary inspection on the plated optical part: and observing the surface of the sample film by using a microscope to check whether peeling exists or not and whether the film is complete or not and whether the surface is compact or not under the condition of cracking.
Preferably, a crystal control method is used for monitoring the film deposition rate, and the power is adjusted to ensure that the deposition rates of the zinc sulfide film material and the ytterbium fluoride film material are respectively equal to
And
the film product formed by the invention has the advantages of variable angle incidence (0-8 degrees), good film uniformity (the diameter of a prepared substrate is phi 30mm, the tolerance of the wavelength is +/-0.07 mu m), high peak transmittance of a wave band (1.3-2.7 mu m is more than 92 percent on average), high out-of-band rejection ratio (0.38 mu m-1.1 mu m and 3-4 mu m are less than 1 percent), good central wavelength stability (no drift), small film loss and stress, high firmness, strong environmental adaptability and the like aiming at the working wavelength of 1.3-2.7 mu m.
The invention mainly provides a dielectric film coating for inhibiting interference energy of short and long wave with band-pass filtering of 0.38-1.1 mu m &3-4 mu m at the same time aiming at a near infrared band with the wavelength of 1.3-2.7 mu m, the dielectric film coating has the characteristics of high transmissivity, band-pass filtering, good reliability and strong environmental adaptability, can be widely applied to thermal imagers, analytical instruments and various advanced optical systems, and can be used for various lasers, thermal imagers, detection systems, temperature sensors, vehicle auxiliary devices, biochemical analysis, spectral measurement, security inspection and other optical systems with the working wavelength of the near infrared band with the wavelength of 1.3-2.7 mu m.
Drawings
FIG. 1 is a graph of short-wave transmittance calculated by optimization according to the present invention.
FIG. 2 is a graph of long-wave transmittance calculated by optimization according to the present invention.
FIG. 3 is a graph showing the designed transmittance of the bandpass filter of the invention.
Fig. 4 is a graph of an actual test spectrum of the bandpass filter of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following drawings and specific examples.
Example 1
A near-infrared band-pass filter as shown in fig. 1-3, comprising a substrate, and a short-wavelength band-pass filter film and a long-wavelength band-pass filter film formed on both side surfaces of the substrate, wherein the filter has a film system structure of:
21^(0.5L H 0.5L)|Al 2 O 3 |(0.5H L 0.5H)^35
wherein, 21^ (0.5L H0.5L) is a short wave-pass filter film with a front surface and a reference wavelength of lambda 1 ，λ 1 3200nm;
(0.5Hl0.5H) ^35 is a long-wave-pass filter film with the reverse surface and the reference wavelength of lambda 2 ，λ 2 Is 525nm; l is YbF 3 And the film layer is a ZnS film layer.
In the short-wave-pass filter film, the film layer adjacent to the substrate is the 1 st layer, the outermost layer is the 42 th layer, and the film system structure is as follows:
Sub/1.103H 1.070L 1.055H 1.013L 0.990H 0.989L 1.008H 0.990L 0.978H 0.996L 0.998H 0.986L 0.989H 1.011L 0.999H 1.001L 1.031H 1.093L 1.237H 0.132L 1.306H 1.117L 1.137H 1.123L 1.162H 1.116L 1.161H 1.114L 1.092H 1.091L 1.079H 1.080L 1.091H 1.103L 1.111H 1.137L 1.091H 1.125L 1.112H 1.106L 1.100H 0.551L/Air。
in the long-wave pass filter film, the film layer adjacent to the substrate is the 1 st layer, the outermost layer is the 70 th layer, and the film system structure is as follows:
Sub/0.771H 1.464L 1.598H 1.175L 0.976H 0.772L 1.260H 0.913L 1.009H 1.001L 1.134H 0.910L 0.911H 1.087L 0.917H 0.982L 0.370H 0.641H 1.188L 1.155H 1.233L 1.364H 1.217L 1.319H 1.231L 1.397H 1.281L 1.221H 1.321L 1.352H 1.379L 1.176H 1.163L 0.597H 0.839H 1.489L 1.746H 1.544L 1.632H 1.650L 1.538H 1.805L 1.544H 1.765L 1.696H 1.642L 1.852H 1.529L 1.675H 1.573L 1.593H 1.998L 0.700H 1.038H 2.194L 2.058H 2.009L 2.310H 2.048L 2.112H 2.370L 1.940H 2.229L 2.381H 1.657L 2.687H 1.845L 1.500H 5.186L 0.005H/Air。
the preparation method of the near-infrared band-pass filter comprises the following steps:
(1) In Al 2 O 3 Short wave pass filter film coated on single surface of substrate
a. Clean Al 2 O 3 The substrate and the cleaning method can adopt ultrasonic cleaning or alcohol wiping. Ultrasonic cleaning is mostly used for the conditions of regular shape and ultrasonic intensity resistance of the surface; the wiping mode is mainly used for the condition that a film is arranged on a single surface or the surface is easy to damage, and the tool can adopt degreased white cloth, absolute ethyl alcohol and a dropping bottle.
b. Bombardment of radicals with ion sources prior to platingBaking the substrate for 2min, placing the cleaned substrate into a prepared fixture, placing the fixture into a high vacuum coating device, and vacuumizing to 9 × 10 -3 Pa, heating the substrate to 120 ℃, and preserving the heat for 30min;
c. plating a 1 st film layer, pre-melting ZnS film material, and performing ion bombardment on a substrate by using the pre-melted ZnS film material with the vacuum degree of 9 multiplied by 10 -3 Pa, ion bombardment voltage of 90V negative high voltage, and ionization strike time of 8min;
vapor deposition is carried out by ZnS film material, and the pressure intensity of a vacuum chamber during vapor deposition is 9 multiplied by 10 -3 Pa, the evaporation rate is 1.5nm/s, so that ZnS film material ions are deposited on the substrate, and the thickness of the 1 st film layer is determined by adopting a quartz crystal monitoring method;
d. coating the 2 nd film layer to YbF 3 Pre-melting the film material, and using pre-melted YbF 3 The film material carries out ion bombardment on the substrate with the vacuum degree of 9 multiplied by 10 -3 Pa, ion bombardment voltage of 95V negative high voltage, and impact time of 5min;
using YbF 3 The film material is evaporated, and the pressure of the vacuum chamber is 9 multiplied by 10 during evaporation -3 Pa, evaporation rate of 0.7nm/s, ybF 3 Depositing film material ions on a substrate, and determining the thickness of a 2 nd film layer by adopting a quartz crystal monitoring method;
e. c, repeating the step c and the step d in sequence, and plating a 3 rd to 42 th film layer;
f. placing the optical filter with the 42-layer film layer plated in a vacuum chamber at 180 ℃ for heat preservation for 2 hours, then cooling to room temperature, and taking out the optical part with the short-wave-pass optical filter film plated on one side;
(2) Coating a long-wave pass filter film on the other surface of the substrate
And (e) firstly repeating the steps a-d, then sequentially repeating the steps c and d to plate the 3 rd to 70 th film layers, and finally repeating the step f to obtain the optical part with the two sides uniformly plated.
The method also comprises the following steps of carrying out primary inspection on the plated optical parts: and observing the surface of the sample film by using a microscope to check whether peeling exists or not and whether the film is complete or not and whether the surface is compact or not under the condition of cracking.
Using crystalsThe control method monitors the film deposition rate, and adjusts the power to ensure that the deposition rates of the zinc sulfide film material and the ytterbium fluoride film material are respectively equal to
And
example 2
This example differs from example 1 in the following:
b. bombarding the substrate with an ion source for 6min before plating, and baking the substrate: vacuum pumping to 3 × 10 -4 Pa, heating the substrate to 170 ℃, and preserving the heat for 40min;
c. plating a 1 st film layer, pre-melting ZnS film material, and performing ion bombardment on a substrate with the pre-melted ZnS film material at a vacuum degree of 5 × 10 -4 Pa, ion bombardment voltage of 130V negative high voltage, and ionization strike time of 13min;
evaporating with ZnS film material under a vacuum chamber pressure of 2 × 10 -4 Pa, the evaporation rate is 2nm/s, so that ZnS film material ions are deposited on the substrate, and the thickness of the 1 st film layer is determined by adopting a quartz crystal monitoring method;
d. plating a 2 nd film layer, pre-melting YbF3 film material, and performing ion bombardment on a substrate by using the pre-melted YbF3 film material with the vacuum degree of 2 multiplied by 10 -4 Pa, negative high voltage of 115V of ion bombardment voltage, and the off-striking time is 8min;
vapor deposition was carried out using YbF3 film material at a vacuum chamber pressure of 2X 10 -4 Pa, the evaporation rate is 1.3nm/s, ybF3 film material ions are deposited on the substrate, and the thickness of the 2 nd film layer is determined by adopting a quartz crystal monitoring method.
Example 3
This example differs from example 1 in the following:
b. bombarding the substrate with an ion source for 4min before plating, and baking the substrate: vacuum-pumping to 1 × 10 -4 Pa; heating the substrate to 136 ℃, and preserving the heat for 33min;
c. plating a 1 st film layer, pre-melting the ZnS film material, and using the pre-melted ZnS film material to perform surface treatmentIon bombardment of the substrate at a vacuum of 1X 10 -4 Pa, negative high voltage of ion bombardment voltage 102V, and ionization strike time of 10min;
evaporating with ZnS film material under a vacuum chamber pressure of 1 × 10 -4 Pa, the evaporation rate is 1.7nm/s, so that ZnS film material ions are deposited on the substrate, and the thickness of the 1 st film layer is determined by adopting a quartz crystal monitoring method;
d. coating the 2 nd film layer to YbF 3 Pre-melting the film material, and using pre-melted YbF 3 The film material carries out ion bombardment on the substrate with the vacuum degree of 1 multiplied by 10 -4 Pa, negative high voltage of 102V of ion bombardment voltage, and impact time of 6min;
using YbF 3 The film material is evaporated, and the pressure of the vacuum chamber is 1 multiplied by 10 during evaporation -4 Pa, evaporation rate of 0.9nm/s, ybF 3 And (3) depositing film material ions on the substrate, and determining the thickness of the 2 nd film layer by adopting a quartz crystal monitoring method.
Example 4
This example differs from example 1 in the following:
b. bombarding the substrate with an ion source for 5min before plating, baking the substrate: vacuum-pumping to 2 × 10 -4 Pa; heating the substrate to 152 ℃, and keeping the temperature for 36min;
c. plating a 1 st film layer, pre-melting ZnS film material, and performing ion bombardment on a substrate with the pre-melted ZnS film material with a vacuum degree of 3 × 10 -4 Pa, negative high voltage of 116V of ion bombardment voltage, and impact time of 12min;
evaporating with ZnS film material under a vacuum chamber pressure of 1 × 10 -4 Pa, the evaporation rate is 1.8nm/s, znS film material ions are deposited on the substrate, and the thickness of the 1 st film layer is determined by adopting a quartz crystal monitoring method;
d. coating the 2 nd film layer to YbF 3 Pre-melting the film material, and using pre-melted YbF 3 The film material carries out ion bombardment on the substrate with the vacuum degree of 1 multiplied by 10 -4 Pa, ion bombardment voltage of 108V negative high voltage, and ionization strike time of 7min;
using YbF 3 The film material is evaporated, and the pressure of the vacuum chamber is 1 multiplied by 10 during the evaporation -4 Pa, evaporation rate of 1.1nm/s, ybF 3 Film material ions are deposited on the substrate, and the thickness of the 2 nd film layer is determined by adopting a quartz crystal monitoring method.
The spectral characteristics of the four types of near infrared band bandpass filters prepared in example 1, example 2, example 3, and example 4 were measured.
Spectral characteristics of the film sample are respectively tested by an Agilent 3100 Fourier infrared spectrometer (the test wavelength range is 1.44um to 24um, the characteristic resolution is 0.01 um) and a Carry5000 spectrophotometer (the measurable spectral range is 175-3300nm, the spectral resolution is less than 0.2 nm). The optical surface type of the aluminum oxide substrate has the local aperture and the surface roughness of N =0.5, rms =0.4nm. The average transmittance in the working waveband of the transmission band of 1.3-2.7 μm is about 95%, the average transmittance at the high peak value of the waveband of 1.3-2.7 μm is more than 92%, and the average transmittance in the reflection area is only 1%. The gradient of the transition zone of the spectral transmission curve meets the requirement, and the design requirement of the band-pass filter film is met. The alumina substrate had an optical surface type, local aperture and surface roughness of N =1, Δ N =0.5.
The measured spectrum curve is shown in figure 4, the main technical index of the thin film product formed by the invention reaches the working waveband range of 1.3-2.7 mu m, and the thin film product meets the design requirements of variable angle incidence angle (0-8 degrees), cutoff waveband of 0.38-1.1 mu m & lt 3-4 mu m, average transmission rate of transmission waveband of more than or equal to 92 percent, cutoff depth of less than or equal to 2 percent and passband width of 1.4 +/-0.2 mu m.
After the spectrum test, the film sample is placed in a high-low temperature test box, the temperature is reduced to minus 45 ℃ plus or minus 2 ℃ from the room temperature, the change rate of the temperature is not more than 2 ℃/min, the temperature is kept for 4 hours, the sample is taken out, the sample is placed to the room temperature, then the sample is placed in a wet-hot box, the temperature is 60 plus or minus 2 ℃, then the humidity is 95% -98%, the temperature is kept for 12 hours, the test sample is taken out, the degreasing cloth is dipped in absolute ethyl alcohol, the film surface is wiped clean and observed under a microscope, the film surface has no obvious flaws, spots and shedding phenomena, the mechanical property of the film is detected by adopting a stripping method, and the reliability verification is also passed.
The above embodiments are not intended to limit the present invention, and the present invention is not limited to the above examples, and those skilled in the art may make variations, modifications, additions or substitutions within the technical scope of the present invention.
Claims (9)
1. A near-infrared band-pass filter is characterized in that: the short-wave pass filter film and the long-wave pass filter film are formed on the surfaces of the two sides of the substrate, the film system structure of the short-wave pass filter film is Sub/(0.5L H0.5L) ^ m/Air, m is the periodicity, the film system structure of the long-wave pass filter film is Sub/(0.5H L0.5H) ^ n/Air, and n is the periodicity;
wherein Sub is a substrate, L is YbF 3 And the film layer is a ZnS film layer.
2. The near-infrared band bandpass filter according to claim 1, characterized in that: the filter substrate is aluminum oxide.
3. The near-infrared band bandpass filter according to claim 2, characterized in that: the film system structure of the short wave pass filter film is Sub/(0.5L H0.5L) ^21/Air, and the reference wavelength is lambda 1 ，λ 1 At 3200nm.
4. The near-infrared band bandpass filter according to claim 2, characterized in that: the film system structure of the long-wave-pass filter film is Sub/(0.5H0.5H) ^35/Air, and the reference wavelength is lambda 2 ，λ 2 At 525nm.
5. The near-infrared band bandpass filter according to claim 3, characterized in that: in the short-wave pass filter film, the film layer adjacent to the substrate is the 1 st layer, the outermost layer is the 42 th layer, and the film system structure is as follows:
Sub/1.103H 1.070L 1.055H 1.013L 0.990H 0.989L 1.008H 0.990L 0.978H 0.996L 0.998H 0.986L 0.989H 1.011L 0.999H 1.001L 1.031H 1.093L 1.237H 0.132L 1.306H 1.117L 1.137H 1.123L 1.162H 1.116L 1.161H 1.114L 1.092H 1.091L 1.079H 1.080L 1.091H 1.103L 1.111H 1.137L 1.091H 1.125L 1.112H 1.106L 1.100H 0.551L/Air。
6. the near-infrared band bandpass filter according to claim 4, characterized in that: in the long-wave pass filter film, the film layer adjacent to the substrate is a 1 st layer, the outermost layer is a 70 th layer, and the film system structure is as follows:
Sub/0.771H 1.464L 1.598H 1.175L 0.976H 0.772L 1.260H 0.913L 1.009H 1.001L 1.134H 0.910L 0.911H 1.087L 0.917H 0.982L 0.370H 0.641H 1.188L 1.155H 1.233L 1.364H 1.217L 1.319H 1.231L 1.397H 1.281L 1.221H 1.321L 1.352H 1.379L 1.176H 1.163L 0.597H 0.839H 1.489L 1.746H 1.544L 1.632H 1.650L 1.538H 1.805L 1.544H 1.765L 1.696H 1.642L 1.852H 1.529L 1.675H 1.573L 1.593H 1.998L 0.700H 1.038H 2.194L 2.058H 2.009L 2.310H 2.048L 2.112H 2.370L 1.940H 2.229L 2.381H 1.657L 2.687H 1.845L 1.500H 5.186L 0.005H/Air。
7. a method for manufacturing a near-infrared band bandpass filter according to any one of claims 1 to 6, wherein: the method comprises the following steps:
(1) Short wave pass filter film coated on single surface of substrate
a. Cleaning the substrate, placing the substrate in a vacuum chamber, and vacuumizing to 9 × 10 -3 Pa～3×10 -4 Pa；
b. Bombarding the substrate with an ion source for 2-6 min, heating the substrate to 120-170 ℃, and preserving heat for 30-40 min;
c. plating a 1 st film layer, pre-melting ZnS film material, and performing ion bombardment on a substrate by using the pre-melted ZnS film material with the vacuum degree of 9 multiplied by 10 -3 Pa～5×10 -4 Pa, negative high voltage of ion bombardment voltage 90V-130V, and ionization time of 8min-13min;
evaporating with ZnS film material under a vacuum chamber pressure of 9 × 10 -3 Pa～2×10 -4 Pa, the evaporation rate is 1.5nm/s-2nm/s, so that ZnS film material ions are deposited on the substrate, and the thickness of the 1 st film layer is determined by adopting a quartz crystal monitoring method;
d. coating the 2 nd film layer to YbF 3 Film material is carried outPremelting with premelted YbF 3 The film material carries out ion bombardment on the substrate with the vacuum degree of 9 multiplied by 10 -3 Pa～2×10 -4 Pa, ion bombardment voltage of 95V-115V negative high voltage, and ion bombardment time of 5min-8min;
using YbF 3 The film material is evaporated, and the pressure of the vacuum chamber is 9 multiplied by 10 during evaporation -3 Pa～2×10 -4 Pa, evaporation rate of 0.7nm/s-1.3nm/s, making YbF 3 Depositing film material ions on a substrate, and determining the thickness of a 2 nd film layer by adopting a quartz crystal monitoring method;
e. c, repeating the step c and the step d in sequence, and plating a 3 rd to 42 th film layer;
f. placing the optical filter with the 42-layer film layer plated in a vacuum chamber at 180 ℃ for heat preservation for 2 hours, cooling to room temperature, and taking out the optical part with the short-wave-pass filter film plated on one side;
(2) Coating a long-wave pass filter film on the other surface of the substrate
And (e) firstly repeating the steps a-d, then sequentially repeating the steps c and d to plate the 3 rd to 70 th film layers, and finally repeating the step f to obtain the optical part with the two sides uniformly plated.
8. The method for manufacturing a near-infrared band-pass filter according to claim 7, wherein: the method also comprises the following steps of carrying out primary inspection on the plated optical parts: and observing the surface of the sample film by using a microscope, and checking whether the sample film is skinned or not and whether the film is complete or not and whether the surface is compact or not under the condition of cracking or not.
9. The method for manufacturing a near-infrared band-pass filter according to claim 7, wherein: the deposition rate of the film is monitored by a crystal control method, and the power is adjusted to ensure that the deposition rates of zinc sulfide film material and ytterbium fluoride film material are respectively
And
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