WO2023063103A1 - Dispositif fluorescent et dispositif électroluminescent - Google Patents

Dispositif fluorescent et dispositif électroluminescent Download PDF

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Publication number
WO2023063103A1
WO2023063103A1 PCT/JP2022/036537 JP2022036537W WO2023063103A1 WO 2023063103 A1 WO2023063103 A1 WO 2023063103A1 JP 2022036537 W JP2022036537 W JP 2022036537W WO 2023063103 A1 WO2023063103 A1 WO 2023063103A1
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Prior art keywords
light
fluorescent
phosphor
phosphor device
wavelength conversion
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PCT/JP2022/036537
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English (en)
Japanese (ja)
Inventor
功康 中島
俊雄 森
岳志 阿部
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パナソニックＩｐマネジメント株式会社
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Publication of WO2023063103A1 publication Critical patent/WO2023063103A1/fr

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers

Definitions

  • the present invention relates to a phosphor device and a light-emitting device using the phosphor device.
  • Light-emitting devices that use solid-state light-emitting elements such as LEDs or semiconductor lasers as light sources are used in projectors, endoscopes, in-vehicle headlamps, lighting devices, liquid crystal display devices, and the like.
  • a light-emitting device of this type includes, for example, a light source and a phosphor device that emits fluorescence by using light emitted by the light source as excitation light.
  • a semiconductor laser is used as a light source because high brightness is required for a light emitting device used in a projector or an endoscope.
  • Patent Document 1 discloses an optical component that includes a light-transmitting member and a wavelength conversion member having a fluorescent portion and a light-reflecting portion disposed on the light-transmitting member. .
  • a space is provided between the fluorescent portion of the wavelength conversion member and the translucent member.
  • the interior of the light reflecting portion provided around the fluorescent portion contains a myriad of light reflecting particles or voids (air layers) for scattering and reflecting the light emitted from the fluorescent portion.
  • a light scattering portion is present.
  • the fluorescent part emits light of a predetermined color when excited light is applied to the fluorescent part.
  • the fluorescent portion generates heat by being irradiated with the excitation light.
  • the temperature of the portion of the fluorescent portion on the light incident side becomes high.
  • the number of light scattering portions (light reflecting particles, voids) in the light reflecting portion should be reduced.
  • the original light reflecting function of the light reflecting portion deteriorates.
  • the light emitted from the fluorescent portion can be easily guided deep inside the light reflecting portion, and the light emitted from the fluorescent portion is absorbed by the light reflecting portion at a higher rate. As a result, less light is available for the phosphor device, which ultimately reduces the efficiency and brightness of the phosphor device.
  • the present invention has been made in view of such problems, and an object of the present invention is to provide a phosphor device and a light-emitting device with high efficiency and high brightness.
  • one aspect of the phosphor device includes a substrate member, and a wavelength conversion member provided on the substrate member and having a fluorescent portion, wherein the substrate member and the wavelength conversion The member is joined by solid phase joining.
  • one aspect of the light-emitting device includes the above-described phosphor device and a light source for emitting light incident on the phosphor device, and the outer size of the phosphor portion in the phosphor device is the above-described phosphor device. It is equivalent to the spot size when the light emitted from the light source is incident on the fluorescent portion.
  • FIG. 1 is a diagram showing the configuration of a phosphor device according to Embodiment 1.
  • FIG. FIG. 2 is a diagram showing the configuration of the light-emitting device according to Embodiment 1.
  • FIG. 3A is a diagram showing the configuration of a conventional phosphor device.
  • FIG. 3B is a diagram for explaining how excitation light enters a conventional phosphor device.
  • FIG. 4 is a diagram for explaining how excitation light enters the phosphor device according to the first embodiment.
  • FIG. 5 is a cross-sectional view of a phosphor device according to Embodiment 2.
  • FIG. FIG. 6 is a cross-sectional view of a phosphor device according to a modification.
  • each figure is a schematic diagram and is not necessarily strictly illustrated.
  • symbol is attached
  • FIG. 1 is a diagram showing the configuration of a phosphor device 1 according to Embodiment 1.
  • FIG. 1 (a) is a top view of the same phosphor device 1, and (b) is a cross-sectional view of the same phosphor device 1 along line Ib-Ib of (a).
  • the phosphor device 1 includes a substrate member 10 and a wavelength conversion member 20. As shown in FIG.
  • the wavelength conversion member 20 is provided on the substrate member 10 , and the substrate member 10 supports the wavelength conversion member 20 .
  • the wavelength conversion member 20 has at least a fluorescence portion 21 that emits fluorescence and a light reflection portion 22 that reflects light.
  • the substrate member 10 has a translucent base material 11 and a dielectric multilayer film 12 and an antireflection film 13 provided on the translucent base material 11 .
  • the translucent base material 11 is a translucent substrate, and includes a first surface 11a (upper surface), which is the surface on the side of the wavelength conversion member 20, and a second surface 11b ( lower surface).
  • the translucent base material 11 is preferably a substrate having a high light transmittance.
  • the translucent base material 11 is preferably a transparent substrate having high transmittance so that the other side can be seen through.
  • the translucent base material 11 it is preferable that it is a board
  • a transparent substrate a sapphire substrate made of Al 2 O 3 , an aluminum nitride substrate made of AlN, or a gallium nitride substrate made of GaN can be used.
  • the main component of the material forming the translucent substrate 11 is Al 2 O 3 , AlN, or GaN.
  • the transparent substrate having high heat resistance and high light transmittance is not limited to these transparent substrates, and may be a transparent substrate such as a glass substrate.
  • the dielectric multilayer film 12 is provided on the first surface 11 a of the translucent base material 11 .
  • the dielectric multilayer film 12 is a surface film that is the uppermost layer of the substrate member 10 .
  • the dielectric multilayer film 12 has a structure in which a plurality of dielectric films are laminated, and reflects specific light while transmitting other specific light.
  • Dielectric multilayer film 12 in the present embodiment reflects light emitted by the phosphor of fluorescent portion 21 of wavelength conversion member 20 and transmits excitation light incident on phosphor device 1 .
  • the dielectric multilayer film 12 reflects at least the yellow light emitted by the fluorescent portion 21. and transmit ultraviolet light or blue light, which is excitation light.
  • the dielectric multilayer film 12 By providing the dielectric multilayer film 12 on the side of the first surface 11 a of the translucent base material 11 (on the side of the wavelength conversion member 20 ) in this way, the light emitted by the fluorescent portion 21 of the wavelength conversion member 20 reaches the substrate member 10 .
  • the directed light can be reflected by the dielectric multilayer film 12 . This makes it possible to increase the light of the fluorescent portion 21 that can be extracted from the phosphor device 1 .
  • the anti-reflection film 13 is provided on the second surface 11 b of the translucent base material 11 .
  • the antireflection film 13 is a surface film that is the bottom layer of the substrate member 10 .
  • the antireflection film 13 may be either a single layer film or a multilayer film.
  • the antireflection film 13 includes silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ), aluminum oxide (Al 2 O 3 ), It is a multilayer film in which at least two types of dielectric films such as aluminum nitride (AlN) are laminated.
  • the antireflection film 13 on the second surface 11b of the translucent substrate 11 By providing the antireflection film 13 on the second surface 11b of the translucent substrate 11 in this way, the reflection of the light incident on the phosphor device 1 from the second surface 11b side of the translucent substrate 11 can be prevented. can be suppressed. Thereby, the light incident on the light-transmitting base material 11 from the second surface 11b side of the light-transmitting base material 11 can be efficiently taken into the light-transmitting base material 11 . Specifically, the excitation light incident on the phosphor device 1 to cause the fluorescent portion 21 to emit fluorescence can be efficiently taken into the translucent base material 11 .
  • the fluorescent part 21 of the wavelength conversion member 20 is a light-emitting layer that emits light, and is excited by excitation light to emit fluorescence light of a predetermined wavelength in the visible region.
  • the fluorescent part 21 is a yellow phosphor layer made of a yellow phosphor.
  • the fluorescent portion 21, which is a yellow fluorescent layer emits fluorescence by using light having a shorter wavelength than yellow light (for example, ultraviolet light to blue light) as excitation light. That is, the yellow phosphor layer converts the wavelength of the excitation light into yellow light having a longer wavelength than the excitation light.
  • the fluorescent portion 21 is a fluorescent layer made of only fluorescent material.
  • the fluorescent portion 21 is a fluorescent ceramic layer composed of a sintered single crystal phase fluorescent material, and the main component is the fluorescent ceramic.
  • the phosphor ceramic layer As the phosphor part 21 in this manner, heat resistance and heat dissipation can be improved.
  • the fluorescent portion 21 is a fluorescent ceramic layer consisting of only a single crystal phase.
  • the phosphor layer 21 may be a phosphor layer in which phosphors are sealed by sealing with a binder, or a single crystal phosphor layer may be used.
  • the fluorescent part 21 composed of a phosphor layer in which the phosphor is bound by a binder includes a phosphor-containing resin layer in which the phosphor is sealed with a transparent resin (refractive index of about 1.5), and a liquid glass (refractive index).
  • a phosphor-containing Phosphor ceramic layers combined with ceramic sintered bodies made of ceramics such as alumina (single crystal with a refractive index of about 1.8) can be used.
  • the fluorescent portion 21 is a fluorescent ceramic layer.
  • the phosphor layer 21 is a single-crystal phosphor layer, the phosphor layer 21 does not contain air, so the phosphor layer 21 has good thermal conductivity.
  • Fluorescent portion 21 includes a first crystal phase having a garnet structure. More specifically, in the present embodiment, fluorescent portion 21 is composed only of the first crystal phase having a garnet structure. In other words, fluorescent portion 21 according to the present embodiment does not contain a crystal phase having a structure different from the garnet structure.
  • a garnet structure is a crystal structure represented by the general formula A 3 B 2 C 3 O 12 .
  • Element A includes rare earth elements such as Ca, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Lu
  • element B includes Mg, Al, Si, Ga and Sc. Elements are applied, element C being elements such as Al, Si and Ga.
  • garnet structures include YAG (yttrium aluminum garnet), LuAG (lutetium aluminum garnet), Lu 2 CaMg 2 Si 3 O 12 (lutetium calcium magnesium Silicon garnet (Lutetium Calcium Magnesium Silicon Garnet) and TAG (Terbium Aluminum Garnet).
  • the material of the phosphor constituting the phosphor portion 21 is (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (that is, (Y 1-x Ce x ) 3 Al 5 O 12 ).
  • the crystalline phase represented by (0.0001 ⁇ x ⁇ 0.1), ie, YAG, is used, and the phosphor portion 21 is a phosphor ceramic layer made of only sintered YAG.
  • the phosphor section 21 is a yellow phosphor layer made of YAG phosphor.
  • the first crystal phase forming the fluorescent portion 21 may be a solid solution of a plurality of garnet crystal phases with different chemical compositions.
  • a solid solution includes a garnet crystal phase represented by (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.00001 ⁇ x ⁇ 0.1) and (Lu 1-d Ced) 3 Al 2 Al 3 O 12 (0.00001 ⁇ d ⁇ 0.1) and a solid solution with a garnet crystal phase ((1-a)(Y 1-x Cex ) 3 Al 5 O 12 ⁇ a(Lu 1 -d Ced) 3 Al2 Al 3 O 12 (0 ⁇ a ⁇ 1)).
  • such a solid solution includes a garnet crystal phase represented by (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.00001 ⁇ x ⁇ 0.1) and (Lu 1-z Ce z ) 2 CaMg 2 Si 3 O 12 (0.00001 ⁇ z ⁇ 0.15) with a garnet crystal phase ((1-b)(Y 1-x Cex ) 3 Al 2 Al 3 O 12 ⁇ b(Lu 1-zCe z ) 2 CaMg 2 Si 3 O 12 (0 ⁇ b ⁇ 1)) and the like. Since the fluorescent portion 21 is composed of a solid solution of a plurality of garnet crystal phases with different chemical compositions, the fluorescence spectrum of the fluorescence emitted by the fluorescent portion 21 is broadened, and the green light component and the red light component increase. Therefore, it is possible to provide a phosphor device that emits output light with a wide color gamut.
  • the first crystal phase constituting the fluorescent portion 21 may contain a crystal phase whose chemical composition is different from the crystal phase represented by the general formula A 3 B 2 C 3 O 12 described above. .
  • a crystal phase Al - rich ( Y 1 ⁇ x Ce x ) 3 Al 2+ ⁇ Al 3 O 12 ( ⁇ is a positive number).
  • a Y - rich ( Y 1 ⁇ x Ce x ) 3 + ⁇ Al 2 Al 3 O 12 ( ⁇ is a positive number).
  • These crystal phases have chemical compositions different from those of the crystal phase represented by the general formula A 3 B 2 C 3 O 12 , but maintain the garnet structure.
  • the fluorescent portion 21 When the fluorescent portion 21 is composed of a crystal phase with a different chemical composition, regions with different refractive indices are generated in the fluorescent portion 21, so that the excitation light and fluorescence are more scattered, and the light emitting area of the fluorescent portion 21 is increased. become smaller. Therefore, a phosphor device with smaller etendue and higher light utilization efficiency can be provided.
  • the fluorescent portion 21 may contain the first crystal phase and a different phase having a structure other than the garnet structure. When the fluorescent portion 21 is composed of such a first crystal phase and a different phase, a region having a different refractive index is generated in the fluorescent portion 21, so that the excitation light and fluorescence are more scattered, and the light emitting area of the fluorescent portion 21 is reduced. becomes smaller. Therefore, a phosphor device with smaller etendue and higher light utilization efficiency can be provided.
  • the density of the fluorescent portion 21 should be 95% or more and 100% or less of the theoretical density, and more preferably 97% or more and 100% or less of the theoretical density.
  • the theoretical density is the density when the atoms in the layer are ideally arranged.
  • the theoretical density is the density when it is assumed that there are no voids in the fluorescent portion 21, and is a value calculated using the crystal structure. For example, when the density of the fluorescent portion 21 is 99%, the remaining 1% corresponds to voids. That is, the higher the density of the fluorescent portion 21, the smaller the voids.
  • the density of the fluorescent portion 21 should be 4.32 g/cm 3 or more and 4.55 g/cm 3 or less, and more preferably 4.41 g/cm 3 or more and 4.55 g/cm 3 or less.
  • the density of the fluorescent portion 21 is 95% or more and 100% or less of the theoretical density. 97% or more and 100% or less.
  • top view shape of the fluorescent part 21 is rectangular, it is not limited to this.
  • the top view shape of the fluorescent part 21 may be circular.
  • the thickness of the fluorescent portion 21 is constant in the present embodiment, the thickness is not limited to this.
  • the light reflecting portion 22 of the wavelength converting member 20 is provided around the fluorescent portion 21 .
  • the light reflecting portion 22 surrounds the entire periphery of the fluorescent portion 21 in top view.
  • the fluorescent portion 21 has a rectangular top view shape
  • the light reflecting portion 22 has a rectangular opening.
  • the top view shape of the light reflecting portion 22 is a rectangular frame shape having a rectangular opening and a rectangular outer shape.
  • the top view shape of the light reflecting portion 22 is not limited to a rectangular frame shape, and may be an annular shape or the like.
  • the light reflecting portion 22 is in thermal contact with the fluorescent portion 21 . That is, the fluorescent portion 21 and the light reflecting portion 22 are provided so that heat generated in the fluorescent portion 21 can be conducted to the light reflecting portion 22 .
  • the light reflecting section 22 is physically in contact with the fluorescent section 21 .
  • the entire inner peripheral side surface of the light reflecting portion 22 is in contact with the outer peripheral side surface of the fluorescent portion 21 . That is, the fluorescent portion 21 is provided so as to fill the opening of the light reflecting portion 22 .
  • the thickness (height) of the light reflecting portion 22 is the same as the thickness (height) of the fluorescent portion 21, it is not limited to this. That is, the thickness of the light reflecting portion 22 may be less than the thickness of the fluorescent portion 21 or may be greater than the thickness of the fluorescent portion 21 . However, it is preferable that the light reflecting portion 22 is provided so as not to cover the upper surface of the fluorescent portion 21 . In other words, the light reflecting portion 22 is preferably formed so that the material (binder or the like) forming the light reflecting portion 22 does not protrude from the upper surface of the fluorescent portion 21 .
  • the light reflecting portion 22 is composed of a ceramic layer made of a ceramic material such as alumina, or a resin layer made of a resin material or the like.
  • the light reflecting portion 22 is white because it reflects light of wavelengths in the visible light band. That is, the light reflecting portion 22 is a white ceramic layer or a white resin layer.
  • the light reflecting part 22 there are a myriad of light scattering parts 22a for scattering and reflecting light.
  • the light reflecting portion 22 is a ceramic layer
  • the light reflecting portion 22 is a resin layer
  • a large number of light reflecting particles are present inside the resin layer as the light scattering portions 22a for scattering and reflecting light.
  • the fluorescent portion 21 in the present embodiment is a fluorescent ceramic layer made of only sintered fluorescent material
  • the light reflecting portion 22 is preferably a ceramic layer made of ceramic such as alumina. This facilitates integration of the fluorescent portion 21 and the light reflecting portion 22 .
  • the light reflecting portion 22 is preferably a ceramic layer composed of alumina. That is, the main component of the light reflecting portion 22 and the binder of the fluorescent portion 21 are preferably made of the same inorganic material. This facilitates integration of the fluorescent portion 21 and the light reflecting portion 22 .
  • the sintering temperature or the like is controlled so that the light scattering portion is formed inside the ceramic sintered body forming the light reflecting portion 22.
  • a large number of voids can be formed as 22a. As a result, the light incident on the light reflecting portion 22 is scattered at the interface between the ceramics (alumina) and the void.
  • the light reflecting portion 22 is composed of a resin layer made of a resin material
  • the light reflecting portion 22 is formed by using an insulating resin material made of, for example, a thermosetting resin or a thermoplastic resin as a binder.
  • 22a can be formed by dispersing light reflecting particles for scattering and reflecting light.
  • silicon resin, phenol resin, epoxy resin, or the like can be used as the insulating resin material forming the light reflecting portion 22 .
  • the light reflecting particles (light scattering portion 22a) dispersed in the insulating resin material include air particles (air layer), SiO 2 (silica), TiO 2 , Al 2 O 3 , ZrO 2 , MgO, and the like. can be used.
  • the light reflecting portion 22 of the white resin layer can be formed by applying a paste in which countless light reflecting particles are dispersed in an insulating resin material that serves as a binder and curing the paste.
  • Metal fine particles may be used as the light reflecting particles.
  • the substrate member 10 and the wavelength conversion member 20 are joined by solid phase joining.
  • the dielectric multilayer film 12 of the substrate member 10 and the fluorescent part 21 and the light reflecting part 22 of the wavelength conversion member 20 are joined by solid-phase joining.
  • a method of joining the substrate member 10 and the wavelength conversion member 20 by solid-phase joining for example, a method of joining the substrate member 10 and the wavelength conversion member 20, which are members to be joined, in a heated state under pressure. . As a result, atoms forming the substrate member 10 and the wavelength conversion member 20 are diffused.
  • the method of bonding the substrate member 10 and the wavelength conversion member 20 by solid phase bonding is not limited to this, and other methods include plasma activated bonding, surface activated bonding (SAB), ultra-high vacuum bonding, and the like. be.
  • the substrate member 10 and the wavelength conversion member 20 are joined by solid-phase bonding, it is preferable to polish and smooth the joint surfaces of the substrate member 10 and the wavelength conversion member 20 . Thereby, the bonding strength of the bonding interface between the substrate member 10 and the wavelength conversion member 20 which are bonded by solid phase bonding can be improved.
  • the substrate member 10 and the fluorescent portion 21 and the light reflecting portion 22 of the wavelength conversion member 20 are joined by solid-phase bonding. It is sufficient that they are joined by solid-phase joining. In other words, the substrate member 10 and the light reflecting portion 22 do not necessarily have to be solid phase bonded.
  • the substrate member 10 and the fluorescent portion 21 may be joined by solid phase bonding. It may be joined by joining, or may be joined by a method other than solid phase joining.
  • FIG. 2 is a diagram showing the configuration of the light emitting device 100 according to Embodiment 1. As shown in FIG.
  • a light-emitting device 100 includes a phosphor device 1 and a light source 2 that emits light incident on the phosphor device 1 .
  • the light source 2 is an excitation light source that emits excitation light for causing the fluorescent portion 21 of the wavelength conversion member 20 to emit light.
  • the phosphor contained in the fluorescent portion 21 is excited by the excitation light emitted from the light source 2 and emits fluorescence.
  • light-emitting device 100 is a transmissive light-emitting device in which excitation light incident on phosphor device 1 is transmitted through phosphor device 1 . That is, the excitation light incident on the phosphor device 1 is transmitted through the wavelength conversion member 20 . Therefore, the light source 2 is arranged such that the light emitted by the light source 2 passes through the phosphor device 1 . Specifically, the light source 2 is arranged below the phosphor device 1 (on the substrate member 10 side).
  • the light source 2 for example, a semiconductor laser that emits ultraviolet or blue laser light can be used. Since laser light has excellent rectilinearity, by using a semiconductor laser as the light source 2, the laser light (excitation light) can be incident on the fluorescent portion 21 at a desired incident angle.
  • the light source 2 is not limited to a semiconductor laser, and may be another solid light emitting device such as an LED, or an excitation light source other than a solid light emitting device.
  • the light-emitting device 100 configured in this way, light emitted from the light source 2 is incident on the phosphor device 1 , thereby emitting light of a predetermined color from the phosphor device 1 .
  • the light emitted from the light source 2 enters the back surface of the substrate member 10 .
  • the light from the light source 2 incident on the substrate member 10 passes through the substrate member 10 and reaches the fluorescent portion 21 of the wavelength conversion member 20 .
  • the external size of the fluorescent portion 21 is preferably equal to the spot size (the spot size of the excitation light) when the light emitted from the light source 2 is incident on the fluorescent portion 21 .
  • the excitation light from the light source 2 is blue light
  • the fluorescent portion 21 is a yellow fluorescent layer.
  • blue light from the light source 2 is incident on the fluorescent portion 21 .
  • the yellow phosphor (YAG phosphor) of the fluorescent portion 21 absorbs part of the blue light from the light source 2, is excited, and emits yellow light as fluorescence.
  • this yellow light and the blue light from the light source 2 that is not absorbed by the yellow fluorescent material are mixed to form white light, and the fluorescent portion 21 emits white light. That is, white light is extracted from the wavelength conversion member 20 .
  • the substrate member 10 is formed with the dielectric multilayer film 12 that reflects the yellow light emitted by the fluorescent portion 21 and transmits the blue light that is the excitation light.
  • the light directed toward the light source 2 is reflected by the dielectric multilayer film 12 and travels in the opposite direction to the light source 2 .
  • a white light reflecting portion 22 is formed around the fluorescent portion 21 .
  • the white light blue light+yellow light
  • the light traveling in the horizontal direction is reflected by the light reflecting portion 22, returns to the fluorescent portion 21, and exits the fluorescent portion 21. radiated to the outside. Thereby, the amount of light that can be extracted from the fluorescent portion 21 can be increased.
  • the phosphor device 1 is of a remote phosphor type, and the phosphor device 1 and the light source 2 are arranged spatially apart. As a result, the phosphor device 1 (especially the phosphor section 21 ) can be prevented from being affected by the heat generated by the light source 2 .
  • the light emitted from the light source 2 is vertically incident on the back surface of the substrate member 10, but may be incident obliquely on the back surface of the substrate member 10.
  • FIG. 3A is a diagram showing the configuration of a conventional phosphor device 1X
  • FIG. 3B is a diagram for explaining how excitation light enters the conventional phosphor device 1X
  • FIG. 4 is a diagram for explaining how excitation light enters the phosphor device 1 according to the first embodiment.
  • the conventional phosphor device 1X includes a substrate member 10X and a wavelength conversion member 20X arranged on the substrate member 10X.
  • the substrate member 10X is composed of a translucent base material 11X, a dielectric multilayer film 12X, and an antireflection film 13X.
  • the wavelength conversion member 20X is composed of a fluorescent portion 21X and a light reflecting portion 22X.
  • a light scattering portion 22a for scattering and reflecting light is present inside the light reflecting portion 22X.
  • the light reflecting portion 22X of the wavelength converting member 20X and the substrate member 10X are connected by the connecting member 30X, but the fluorescent portion 21X of the wavelength converting member 20X and the substrate member 10X are not connected. That is, the fluorescent portion 21X of the wavelength conversion member 20X and the dielectric multilayer film 12X of the substrate member 10X are not in contact with each other, and the thickness of the connecting member 30X is provided between the fluorescent portion 21X and the substrate member 10X. There is a space 40X of .
  • excitation light is incident on the fluorescent portion 21X of the wavelength conversion member 20X. emits white light.
  • the fluorescent part 21X When the fluorescent part 21X is irradiated with the excitation light, the fluorescent part 21X generates heat. At this time, the lower portion of the fluorescent portion 21X on the incident side of the excitation light becomes hotter than the upper portion.
  • a space 40X is provided between the high-temperature portion (lower portion) of the phosphor portion 21X and the substrate member 10X, so that the heat generated in the phosphor portion 21X is transferred to the substrate. It becomes difficult to conduct to the member 10X. That is, the heat radiation property of the heat generated in the fluorescent portion 21X is poor. Therefore, in the conventional phosphor device 1X, the luminous efficiency of the phosphor portion 21X is lowered, and the efficiency and luminance of the phosphor device 1X are lowered.
  • the original light reflecting function of the light reflecting portion 22X is deteriorated.
  • the light emitted from the fluorescent portion 21X does not hit the light scattering portion 22a and is easily guided deep into the light reflecting portion 22X. higher absorption rate.
  • less light is available for the phosphor device 1X, ultimately reducing the efficiency and brightness of the phosphor device 1X.
  • the number of light scattering portions 22a of the light reflecting portion 22X is increased to suppress the light emitted from the fluorescent portion 21X from being guided inside the light reflecting portion 22X. It is difficult to achieve both of the above and ensuring the heat dissipation performance for the heat generated in the fluorescent portion 21X.
  • the wavelength conversion member 20 having the phosphor portion 21 and the substrate member 10 are joined by solid phase joining.
  • the heat generated in the fluorescent section 21 when the excitation light is incident on the fluorescent section 21 can be efficiently conducted to the substrate member 10 . That is, it is possible to improve the heat radiation property of the heat generated in the fluorescent portion 21 . As a result, the luminous efficiency of the fluorescent portion 21 can be improved, so that the efficiency and luminance of the phosphor device 1 can be improved.
  • the number of the light scattering portions 22a present inside the light reflecting portion 22 provided around the fluorescent portion 21 is increased. can do.
  • the wavelength conversion member 20 and the substrate member 10 are joined by solid phase bonding, so that the heat generated in the fluorescent portion 21 can be efficiently conducted to the substrate member 10. Therefore, even if the number of the light scattering portions 22a is increased and the heat conduction to the light reflecting portion 22 is reduced, it is possible to suppress the deterioration of the heat dissipation performance of the heat generated in the fluorescent portion 21.
  • the number of the light scattering portions 22a of the light reflecting portion 22 can be increased without deteriorating the heat dissipation performance of the heat generated in the fluorescent portion 21. Therefore, the light reflecting portion 22 can be easily improved. That is, it is possible to suppress the light emitted from the fluorescent portion 21 from guiding inside the light reflecting portion 22 .
  • the substrate member 10 transparent to at least the excitation light and the fluorescent portion 21 made of a transparent material are directly solid-phase bonded.
  • the efficiency and luminance of the phosphor device 1 can be significantly improved compared to the case where In other words, solid-phase bonding via a metal causes the bonded portion to become opaque and the translucency to be significantly reduced. can ensure the integrity of the
  • the external size of the fluorescent portion 21 is equivalent to the spot size (spot size of the excitation light) when the light emitted from the light source 2 is incident on the fluorescent portion 21 . Thereby, it is possible to further suppress the light emitted from the fluorescent portion 21 from being guided inside the light reflecting portion 22 .
  • the light emitted from the fluorescent portion 21 is guided inside the light reflecting portion 22 by increasing the number of the light scattering portions 22 a of the light reflecting portion 22 . It is possible to achieve both the suppression of the heat generation and the securing of the heat dissipation property for the heat generated in the fluorescent portion 21 . Therefore, a phosphor device 1 with high efficiency and high brightness can be realized.
  • the substrate member 10 has the translucent base material 11 and the dielectric multilayer film 12 provided on the first surface 11a of the translucent base material 11. ing.
  • the light directed toward the substrate member 10 can be reflected by the dielectric multilayer film 12 .
  • the substrate member 10 further has an antireflection film 13 provided on the second surface 11b of the translucent base material 11 .
  • the main component of the material forming translucent base material 11 of substrate member 10 is preferably Al 2 O 3 , AlN, or GaN.
  • the thermal conductivity of the substrate member 10 can be increased.
  • the heat generated by the fluorescent portion 21 can be more efficiently conducted to the substrate member 10, so that the heat dissipation property of the heat generated by the fluorescent portion 21 can be further improved. Therefore, a phosphor device 1 with higher efficiency and higher brightness can be realized.
  • FIG. 5 is a cross-sectional view of phosphor device 1A according to the second embodiment.
  • the phosphor device 1A according to the present embodiment has a configuration in which the substrate member 10A further includes an intermediate layer 14 in contrast to the phosphor device 1 according to the first embodiment.
  • the intermediate layer 14 is formed on the surface of the dielectric multilayer film 12 on the wavelength converting member 20 side.
  • the intermediate layer 14 is a surface film that is the uppermost layer of the substrate member 10A. Therefore, in the present embodiment as well, the wavelength conversion member 20 and the substrate member 10A are joined by solid-phase bonding as in the first embodiment. 14 are bonded by solid phase bonding. Specifically, the fluorescent portion 21 and the light reflecting portion 22 of the wavelength conversion member 20 and the intermediate layer 14 are joined by solid-phase joining.
  • a transparent film made of transparent oxide or transparent nitride can be used as the intermediate layer 14.
  • the phosphor device 1A according to the present embodiment further includes a metal plate 30 in addition to the phosphor device 1 according to the first embodiment.
  • the metal plate 30 is provided on the surface of the substrate member 10A opposite to the surface on the wavelength conversion member 20 side with the bonding layer 40 interposed therebetween. Specifically, the metal plate 30 is bonded to the antireflection film 13 of the substrate member 10A via the bonding layer 40 .
  • a copper plate or an aluminum plate can be used as the metal plate 30 .
  • the bonding layer 40 a resin adhesive containing a resin material as a main component, a metal adhesive containing a metal material as a main component, or the like can be used. From the viewpoint of efficiently dissipating the heat generated in the fluorescent portion 21 through the substrate member 10A and the metal plate 30, the bonding layer 40 is preferably made of a silver sintered paste adhesive or a metal adhesive such as solder. Note that even when a resin adhesive made of a resin material is used as the bonding layer 40, by dispersing high thermal conductivity fillers in the resin material, the heat generated by the fluorescent portion 21 can be transferred between the substrate member 10A and the metal plate 30. heat can be efficiently dissipated through
  • the metal plate 30 has an opening 31 through which light incident on the phosphor device 1A passes.
  • the metal plate 30 has a rectangular opening 31 .
  • the planar view shape of the metal plate 30 is a rectangular frame shape having a rectangular opening 31 and a rectangular outer shape.
  • the opening 31 of the metal plate 30 has the same size and shape as the opening of the light reflecting portion 22, but is not limited to this.
  • the wavelength conversion member 20 having the fluorescent portion 21 and the substrate member 10A are joined by solid phase bonding, as in the first embodiment.
  • the heat generated in the fluorescent part 21 can be efficiently conducted to the substrate member 10A, so that the fluorescent device 1A with high efficiency and high brightness can be realized.
  • the light reflecting portion 22 is provided around the fluorescent portion 21 . Therefore, light can be efficiently extracted from the fluorescent portion 21 . Therefore, the phosphor device 1A with higher efficiency and higher brightness can be realized.
  • the substrate member 10A has the intermediate layer 14, and the wavelength conversion member 20 and the intermediate layer 14 are joined by solid phase joining.
  • the bondability between the wavelength conversion member 20 and the substrate member 10A can be improved.
  • the heat generated by the fluorescent portion 21 can be more efficiently conducted to the substrate member 10A. Therefore, the phosphor device 1A with higher efficiency and higher brightness can be realized.
  • the intermediate layer 14 of the substrate member 10A is preferably a transparent film made of transparent oxide or transparent nitride.
  • the bondability between the wavelength conversion member 20 and the substrate member 10A can be further improved, so that the heat generated in the fluorescent portion 21 can be more efficiently conducted to the substrate member 10A.
  • the substrate member 10A and the phosphor section 21 are not directly solid-phase bonded, but the intermediate layer 14 is made of a transparent oxide or Since it is a transparent nitride, the fluorescent part 21 made of a transparent material and the intermediate layer 14 made of a transparent material are directly solid-phase bonded.
  • the efficiency and brightness of the phosphor device 1A can be significantly improved compared to the case of solid-phase bonding via metal.
  • the bondability between the substrate member 10A and the fluorescent portion 21 can be improved by the intermediate layer 14 .
  • properties can be improved by solid-phase bonding not only between base materials but also between dissimilar materials.
  • the phosphor device 1A further includes a metal plate 30 provided via a bonding layer 40 on the surface of the substrate member 10A opposite to the surface on the wavelength conversion member 20 side.
  • the metal plate 30 has an opening 31 through which light incident on the phosphor device 1A passes.
  • the phosphor device 1A can be used as a transmissive wavelength conversion element of a light emitting device, as in the first embodiment.
  • the wavelength conversion member 20 has the light reflecting portion 22 in addition to the fluorescent portion 21, but the present invention is not limited to this.
  • the substrate members 10 and 10A have the dielectric multilayer film 12 and the antireflection film 13 in addition to the translucent base material 11, but the present invention is not limited to this.
  • the substrate member 10B may be composed of only the translucent base material 11 without the dielectric multilayer film 12 and the antireflection film 13 . In this case, the fluorescent part 21 and the translucent base material 11 are joined by solid phase joining.
  • the light-emitting device is a transmissive light-emitting device in which the excitation light incident on the phosphor devices 1 and 1A is transmitted through the phosphor devices 1 and 1A, but the present invention is not limited to this.
  • the light-emitting device may be a reflective light-emitting device in which excitation light incident on phosphor devices 1 and 1A is reflected by phosphor devices 1 and 1A without passing through phosphor devices 1 and 1A. That is, the light emitting device may be configured such that the light emitted from the light source 2 is reflected by the wavelength conversion member 20 .
  • the substrate members 10 and 10A on which the wavelength conversion member 20 is formed serve as reflective substrates, and the excitation light is irradiated from above the wavelength conversion member 20 .
  • the light-emitting device is a stationary light-emitting device in which the phosphor devices 1 and 1A do not move, but the present invention is not limited to this.
  • the light-emitting device may be a rotary light-emitting device in which the phosphor devices 1 and 1A rotate.
  • the phosphor device 1, 1A can be used, for example, as a rotating phosphor hole.
  • Reference Signs List 1 1A, 1B phosphor device 2 light source 10, 10A, 10B substrate member 11 translucent substrate 12 dielectric multilayer film 13 antireflection film 14 intermediate layer 20, 20B wavelength conversion member 21 fluorescent section 22 light reflecting section 30 metal plate 31 opening 40 bonding layer 100 light emitting device

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Abstract

Ce dispositif fluorescent (1) comprend : un élément de substrat (10) ; et un élément de conversion de longueur d'onde (20) qui est disposé sur l'élément de substrat (10) et présente une partie fluorescente (21), l'élément de substrat (10) et l'élément de conversion de longueur d'onde (20) étant joints par assemblage en phase solide.
PCT/JP2022/036537 2021-10-11 2022-09-29 Dispositif fluorescent et dispositif électroluminescent WO2023063103A1 (fr)

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JP2021166704A JP2023057276A (ja) 2021-10-11 2021-10-11 蛍光体デバイス及び発光装置
JP2021-166704 2021-10-11

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016157905A (ja) * 2015-02-26 2016-09-01 日本碍子株式会社 光学部品
JP2017021100A (ja) * 2015-07-08 2017-01-26 セイコーエプソン株式会社 波長変換素子、波長変換素子の製造方法、照明装置およびプロジェクター
JP2019053130A (ja) * 2017-09-13 2019-04-04 日亜化学工業株式会社 光学部品、光学部品を用いた発光装置、及び光学部品の製造方法
WO2020100728A1 (fr) * 2018-11-15 2020-05-22 パナソニックＩｐマネジメント株式会社 Dispositif d'émission de lumière
JP2021152615A (ja) * 2020-03-24 2021-09-30 スタンレー電気株式会社 光学装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016157905A (ja) * 2015-02-26 2016-09-01 日本碍子株式会社 光学部品
JP2017021100A (ja) * 2015-07-08 2017-01-26 セイコーエプソン株式会社 波長変換素子、波長変換素子の製造方法、照明装置およびプロジェクター
JP2019053130A (ja) * 2017-09-13 2019-04-04 日亜化学工業株式会社 光学部品、光学部品を用いた発光装置、及び光学部品の製造方法
WO2020100728A1 (fr) * 2018-11-15 2020-05-22 パナソニックＩｐマネジメント株式会社 Dispositif d'émission de lumière
JP2021152615A (ja) * 2020-03-24 2021-09-30 スタンレー電気株式会社 光学装置

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