WO2023047977A1 - Mold release film for processing, method for producing same, and use of same - Google Patents

Mold release film for processing, method for producing same, and use of same Download PDF

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Publication number
WO2023047977A1
WO2023047977A1 PCT/JP2022/033851 JP2022033851W WO2023047977A1 WO 2023047977 A1 WO2023047977 A1 WO 2023047977A1 JP 2022033851 W JP2022033851 W JP 2022033851W WO 2023047977 A1 WO2023047977 A1 WO 2023047977A1
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Prior art keywords
release film
film
resin
mold
release
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PCT/JP2022/033851
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French (fr)
Japanese (ja)
Inventor
直紀 吉田
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三井化学東セロ株式会社
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Application filed by 三井化学東セロ株式会社 filed Critical 三井化学東セロ株式会社
Priority to JP2023549472A priority Critical patent/JPWO2023047977A1/ja
Priority to KR1020247007357A priority patent/KR20240042018A/en
Priority to CN202280062897.3A priority patent/CN117957105A/en
Publication of WO2023047977A1 publication Critical patent/WO2023047977A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/68—Release sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings

Definitions

  • the present invention relates to a process release film, preferably a process release film used in a semiconductor encapsulation process or the like.
  • the present invention relates to a process release film, a method for producing the same, and a method for producing a resin-sealed semiconductor using the same, which enables efficient production of resin-sealed semiconductors and the like.
  • the release film is usually stretched along the inner surface of the mold by vacuum suction and brought into close contact with the inner surface. At this time, the release film adheres to the inner surface in a state in which the air is not completely released while being stretched, and an air pool is partially formed between the release film and the inner surface of the mold, and the release film is formed at that part.
  • the film may wrinkle. If the release film has wrinkles, the shape of the wrinkles on the release film surface is transferred to the surface of the resin sealing portion, resulting in poor appearance and problems such as a decrease in yield. Suppression of wrinkles caused by this has been desired.
  • a method for manufacturing a resin-encapsulated semiconductor A step of placing a semiconductor device to be resin-sealed at a predetermined position in a molding die; The release film for process according to any one of [1] to [6] is applied to the inner surface of the molding die so that the unevenness is formed and the Sdr (development interface area ratio) is 4.0 to 50.0. a step of arranging the surface with 0% so as to face the inner surface of the molding die; deaeration between the process release film and the inner surface of the mold; A step of curing the encapsulating resin disposed between the semiconductor device and the release film for semiconductor encapsulation process after clamping the molding die; A method for manufacturing the resin-encapsulated semiconductor.
  • the process release film of the present invention has high degassing properties, can complete air removal between the release film and the inner surface of the mold in a short time, and has excellent releasability, suppression of wrinkles, and metal mold. Since it also has mold followability, by using this, it is possible to manufacture molded articles obtained by resin-sealing semiconductor chips and the like with high productivity and quality beyond the limits of conventional technology.
  • unevenness is formed on at least one of the two surfaces, and the surface on which the unevenness is formed has an Sdr (development interface area ratio) of 4.0 to 50.0% measured with a laser microscope. It is a process release film.
  • the mold release film for processing of the present invention unevenness is formed on at least one surface thereof, and the Sdr (development interface area ratio) of the uneven surface is within a predetermined numerical range. Realizing high degassability, for example, when used as a process release film in a molding process using a mold, it is possible to complete the removal of air between the process release film and the inner surface of the mold in a short time. It can contribute to the improvement of the productivity of the molding process.
  • the mold release film for processing of the present invention it is sufficient that at least one of the two surfaces has unevenness. That is, only one surface may have unevenness. may be formed.
  • the degassing property of one surface located on the side of the mold is important, so it is sufficient if one surface has unevenness.
  • Forming unevenness only on the surface is advantageous in terms of ease of manufacture, cost, and the like.
  • smoothness is required on the surface of a resin such as a sealing resin, and from this point of view, a release film having unevenness formed only on one surface is preferably used in some cases.
  • Forming unevenness on both surfaces is advantageous in that both surfaces can be provided with excellent degassing properties and releasability. , traces of resin flow, etc. can be made difficult to understand.
  • the shape of the unevenness there are no particular restrictions on the shape of the unevenness, and for example, it may be formed into various shapes such as pear-skin, hairline, grid, round, square, star-shaped, and the like.
  • the shape should be a satin finish or the like from the viewpoint of ease of production. is preferred.
  • the unevenness on both surfaces When unevenness is formed on both surfaces, only the unevenness on one surface may satisfy the condition that Sdr is 4.0 to 50.0%, and the unevenness on both surfaces may satisfy the condition that Sdr is 4.0 to 50.0%. It may satisfy the condition of 4.0 to 50.0%.
  • the degassing property of one surface located on the mold side is important, so in that case, only the unevenness on one surface has an Sdr of 4.0 to 50.0%. It suffices if the condition that In the case of imparting excellent air-removing properties to both surfaces depending on the mode of use, it is preferable that the unevenness on both surfaces satisfies the condition that the Sdr is 4.0 to 50.0%.
  • the developed interface area ratio (Sdr) of the uneven surface indicates how much the actual surface area increases with respect to the area of the defined region. More specifically, the developed area ratio Sdr is defined by the following formula, Sdr is 0 on a perfect plane, and Sdr is 0.414 (41.4%) on a 45° inclined plane. . (Wherein, x and y are the ordinate and abscissa of the defined area, z is the height at that coordinate, and A is the area of the defined area.) Sdr can be measured by a method conventionally known in the art, and more specifically, it can be measured and analyzed using a laser microscope and accompanying software. For example, it can be measured by the method described in Examples in the present specification.
  • Sdr is preferably 6% or more, particularly preferably 8% or more, from the viewpoint of achieving even better degassing properties.
  • a higher Sdr is preferable from the viewpoint of degassability, and there is no particular upper limit from the relationship with the object of the present invention. is common, and 30% or less is more common.
  • the Sdr can be appropriately adjusted by adjusting the conditions for manufacturing the release film for processing and the state of the surface by surface treatment or the like. More specifically, for example, the surface of the metal roll described later is blasted with particles having a particle size of 40 to 100 mesh, and the particle size in the process of manufacturing the metal embossing roll.
  • the temperature of the embossing roll in the step of passing the film between a metal embossing roll and another roll to form irregularities on the film surface, etc., to suitable values it is possible to make appropriate adjustments.
  • the RPc (peak count) of at least one of the uneven surfaces is preferably 30-87.
  • the process It can contribute to further improvement of the productivity of the molding process, such as completing the removal of air between the release film and the inner surface of the mold in a shorter time.
  • the RPc (peak count) when unevenness is formed on both surfaces, only one of the surfaces may satisfy the condition that the RPc (peak count) is 30 to 87.
  • the unevenness may satisfy the condition that the RPc (peak count) is 30-87.
  • the surface having an RPc (peak count) of 30 to 87 in the present embodiment is preferably the same surface as the surface having an Sdr (ratio of developed interface area) of 4.0 to 50.0%.
  • RPc peak count in the present invention is a peak count number based on a roughness curve measured based on JIS B0601 2013 (ISO4287:1997, Amd.1:2009), and is defined by the following formula (I). be.
  • RPc L/RSm (I)
  • L indicates a reference length of 10 mm.
  • RSm indicates the average length of roughness curve elements and is measured based on JIS B0601:2013 (ISO4287:1997, Amd.1:2009).
  • the measurement can be performed using a surface roughness measuring instrument, more specifically, for example, by the method described in Examples of the present application.
  • RPc is preferably 40 to 80, particularly preferably 50 to 80, from the viewpoint of achieving even better degassing properties. RPc can be appropriately adjusted by adjusting the conditions for manufacturing the release film for the process and the state of the surface by the surface treatment described later.
  • the surface of the metal roll described later is blasted with particles having a particle size of 40 to 100 mesh, and the particle size in the process of manufacturing the metal embossing roll.
  • the surface opposite to the surface on which unevenness having Sdr of 4.0 to 50% is formed has a water contact angle of 90 to 130°.
  • the water contact angle of the surface is within the above numerical range, it is possible to achieve even better releasability between the process release film of the present embodiment and the object to be molded.
  • both surfaces when used in a molding process using a mold, from the viewpoint of improving both the releasability from the mold and the releasability from the molded object, both surfaces should have a water contact angle of 90 to 90. It is preferably in the range of 130°.
  • the water contact angle of the film surface in the present embodiment can be measured using a contact angle measuring instrument in accordance with JIS R3257, and more specifically, for example, by the method described in the Examples of the present application. can be done.
  • the water contact angle of the release film surface is more preferably 95° to 120°, still more preferably 98° to 115°, and particularly preferably 100° to 110°.
  • the water contact angle on the surface of the release film can be appropriately increased or decreased by means conventionally used in the industry.
  • the surface of the process release film of the present invention preferably contains a resin selected from the group consisting of fluororesin, 4-methyl-1-pentene (co)polymer, and polystyrene resin.
  • an additive capable of improving releasability may be used, or surface treatment may be performed.
  • release agents silicone-based release agents, melamine-based release agents, polyolefin-based release agents, epoxy-based release agents, acrylic-based release agents, and fluorine-based release agents.
  • cellulose-based release agents cellulose-based release agents, paraffin-based release agents, epoxy-melamine-based release agents, long-chain alkyl-based release agents, and combinations thereof.
  • fluorine-based release agents long-chain alkyl-based release agents, and the like.
  • These release agents may be added to the resin forming the surface of the release film for processing, or may be applied to the surface of the release film for processing.
  • the water contact angle can also be appropriately adjusted by adjusting the shape, density, size, etc. of the unevenness formed on the surface of the film in the present invention.
  • the total thickness of the process release film of the present invention is not particularly limited, and an appropriate thickness may be selected according to the application and usage of the process release film. It is preferably 30 to 150 ⁇ m, more preferably 30 to 150 ⁇ m. When the total thickness of the release film is in the above range, it is preferable because the handling property when used as a roll is good and the amount of waste of the release film is small.
  • the thickness of the process release film of the present invention can be appropriately adjusted by adjusting the film production conditions. For example, when the film is produced by extrusion molding, the lip interval at that time is adjusted. When the film is stretched, it can be adjusted by appropriately setting the stretch ratio.
  • the process release film of the present invention preferably exhibits a specific tensile modulus. That is, the process release film of the present invention preferably has a tensile elastic modulus at 120°C of 30 MPa to 500 MPa, or preferably has a tensile elastic modulus at 170°C of 20 MPa to 400 MPa. Further, the process release film of the present invention preferably has a tensile modulus at 120°C of 30 MPa to 500 MPa and a tensile modulus at 170°C of 20 MPa to 400 MPa. When the laminated film has a tensile modulus of elasticity of 30 MPa to 500 MPa at 120° C.
  • the tensile modulus at 120°C is preferably 300 MPa or less, and more preferably 200 MPa or less at 170°C.
  • the process release film of the present embodiment preferably has a tensile modulus at 120° C. of 30 MPa to 500 MPa, more preferably 40 MPa to 450 MPa, more preferably from 50 MPa to 400 MPa, It is more preferably 200 MPa to 350 MPa, 250 MPa to 300 MPa is particularly preferred.
  • the process release film of the present embodiment preferably has a tensile modulus at 170° C. of 20 MPa to 400 MPa, more preferably from 25 MPa to 300 MPa, It is more preferably 30 MPa to 250 MPa, further preferably 100 MPa to 200 MPa, 120 MPa to 160 MPa is particularly preferred.
  • both the tensile elastic modulus at 120°C and the tensile elastic modulus at 170°C are within the above preferred ranges. It is particularly preferred because of its wide range of applications.
  • the tensile modulus of the process release film of the present embodiment can be measured at 120° C. or 170° C. using a tensile tester in accordance with JIS K7127. It can be measured by the method described in . There is no particular limitation on the method for adjusting the tensile modulus of the process release film, and it may be adjusted as appropriate by a method conventionally employed in the industry. It can be adjusted by selection.
  • PET polyethylene terephthalate
  • PBT polybutylene terephthalate
  • polyamide-6 polyamide-66
  • polypropylene ethylene-tetrafluoroethylene copolymer
  • syndiotactic polystyrene 4-methylpentene-1
  • the process release film of the present invention may be a single layer film or a laminated film of two or more layers.
  • a single-layer film is preferable from the viewpoints of simplicity of construction and production, cost, and the like.
  • it simultaneously and efficiently achieves properties that the film surface should have or preferably has, such as surface properties and releasability, and properties that the entire film, such as tensile elasticity, preferably has.
  • it is preferably a laminated film having two or more layers.
  • it is particularly preferable to be a laminated film including a release layer A having releasability from a molded product or a mold, and a heat-resistant resin layer B supporting the release layer.
  • it may further include a release layer A′ and have a layer structure of release layer A/heat-resistant resin layer B/release layer A′. preferable.
  • the release layer A constituting the process release film of the present embodiment is a layer in contact with the mold surface when used in a molding process using a mold, and has degassing properties and peelability from the mold. From the viewpoint of smoothing the surface roughness, unevenness having an Sdr (expansion interface area ratio) of 4.0 to 50.0% is formed. The details of the unevenness and its preferred form are as described above.
  • the water contact angle of the release layer A is not particularly limited, but the contact angle with water is preferably 90° to 130°, more preferably 95° to 120°, from the viewpoint of further improving the releasability from the mold. , particularly preferably 98° to 115°, more preferably 100° to 110°.
  • a resin selected from the group consisting of fluororesins, 4-methyl-1-pentene (co)polymers, and polystyrene-based resins in view of the excellent releasability of molded articles and the ease of availability.
  • the fluororesin that can be used for the release layer A may be a resin containing structural units derived from tetrafluoroethylene. It may be a homopolymer of tetrafluoroethylene, or a copolymer with other olefins. Examples of other olefins include ethylene. A preferred example is a copolymer containing tetrafluoroethylene and ethylene as monomer structural units. The proportion of structural units derived from is preferably 0 to 45% by mass.
  • the 4-methyl-1-pentene (co)polymer that can be used in the release layer A may be a homopolymer of 4-methyl-1-pentene, and 4-methyl-1-pentene and Copolymers with other olefins having 2 to 20 carbon atoms (hereinafter referred to as "olefins having 2 to 20 carbon atoms”) may also be used.
  • the olefin having 2 to 20 carbon atoms to be copolymerized with 4-methyl-1-pentene is 4-methyl -1-Pentene can impart flexibility.
  • C2-C20 olefins include ethylene, propylene, 1-butene, 1-hexene, 1-heptene, 1-octene, 1-decene, 1-tetradecene, 1-hexadecene, 1-heptadecene, 1 -octadecene, 1-eicosene, and the like. These olefins may be used alone or in combination of two or more.
  • the ratio of structural units derived from 4-methyl-1-pentene is 96 to 99% by mass, and other The ratio of structural units derived from olefins having 2 to 20 carbon atoms is preferably 1 to 4% by mass.
  • the copolymer can be softened, that is, the storage elastic modulus E' can be lowered, and mold followability can be improved. It is advantageous to
  • the 4-methyl-1-pentene (co)polymer can be produced by a method known to those skilled in the art. For example, it can be produced by a method using known catalysts such as Ziegler-Natta catalysts and metallocene catalysts.
  • the 4-methyl-1-pentene (co)polymer is preferably a highly crystalline (co)polymer.
  • the crystalline copolymer may be either a copolymer having an isotactic structure or a copolymer having a syndiotactic structure. In particular, it should be a copolymer having an isotactic structure. is preferable from the viewpoint of physical properties and is easily available.
  • the 4-methyl-1-pentene (co)polymer can be molded into a film, and if it has strength to withstand the temperature and pressure during mold molding, the stereoregularity and molecular weight are also limited. not.
  • the 4-methyl-1-pentene copolymer may be a commercially available copolymer such as TPX (registered trademark) manufactured by Mitsui Chemicals, Inc.
  • Polystyrene-based resins that can be used for the release layer A include styrene homopolymers and copolymers, and the styrene-derived structural units contained in the polymer are at least 60% by weight or more. It is preferably 80% by weight or more, more preferably 80% by weight or more.
  • the polystyrene-based resin may be either isotactic polystyrene or syndiotactic polystyrene, but isotactic polystyrene is preferable from the viewpoint of transparency, availability, etc., and mold releasability, heat resistance, etc. From the viewpoint of, syndiotactic polystyrene is preferable.
  • One type of polystyrene may be used alone, or two or more types may be used in combination.
  • the release layer A preferably has heat resistance that can withstand the temperature of the mold during molding (typically 120 to 180°C). From this point of view, the release layer A preferably contains a crystalline resin having a crystalline component, and the melting point of the crystalline resin is preferably 190° C. or higher, more preferably 200° C. or higher and 300° C. or lower.
  • the fluorine resin preferably contains at least a structural unit derived from tetrafluoroethylene, and the 4-methyl-1-pentene (co)polymer contains 4-methyl-1 It preferably contains at least structural units derived from -pentene, and preferably contains at least syndiotactic polystyrene in polystyrene resins. Since the resin constituting the release layer A contains a crystalline component, wrinkles are less likely to occur in the resin sealing process, etc., and are suitable for suppressing the appearance defects caused by the transfer of wrinkles to the molded product. .
  • the resin containing the crystalline component that constitutes the release layer A has a crystal melting heat quantity of 15 J/g or more and 60 J/g or less in the first heating step measured by differential scanning calorimetry (DSC) according to JISK7221. and more preferably 20 J/g or more and 50 J/g or less.
  • DSC differential scanning calorimetry
  • it is 15 J/g or more, it is possible to more effectively exhibit heat resistance and releasability that can withstand hot press molding in a resin sealing process, etc., and also to suppress the dimensional change rate. Therefore, the occurrence of wrinkles can also be prevented.
  • the release layer A has an appropriate hardness, and sufficient followability of the film to the mold can be obtained in the resin sealing process or the like. Film breakage is effectively suppressed.
  • the release layer A may contain other resins in addition to the fluororesin, 4-methyl-1-pentene copolymer, and/or polystyrene resin. In this case, it is preferable that the hardness of the other resin is relatively high. Examples of other resins include polyamide-6, polyamide-66, polybutylene terephthalate, polyethylene terephthalate. Even when the release layer A contains, for example, a large amount of a soft resin (for example, a large amount of an olefin having 2 to 20 carbon atoms in a 4-methyl-1-pentene copolymer), the hardness is relatively low. By further including a high-grade resin, the release layer A can be hardened, which is advantageous in suppressing the occurrence of wrinkles in the encapsulation process or the like.
  • the content of these other resins is preferably, for example, 3 to 30% by mass based on the resin component constituting the release layer A.
  • the content of the other resin is preferably, for example, 3 to 30% by mass based on the resin component constituting the release layer A.
  • the release layer A contains a heat stabilizer and a weather-resistant stabilizer within a range that does not impair the purpose of the present embodiment.
  • Known additives generally blended in film resins such as agents, rust inhibitors, anti-copper damage stabilizers, and antistatic agents, may also be included. The content of these additives can be, for example, 0.0001 to 10 parts by weight with respect to 100 parts by weight of the fluororesin, 4-methyl-1-pentene copolymer, and/or polystyrene resin.
  • the thickness of the release layer A is not particularly limited as long as it has sufficient releasability from the molded product, but it is usually 1 to 50 ⁇ m, preferably 5 to 30 ⁇ m.
  • the process release film of the present embodiment may have a release layer A′ in addition to the release layer A and the heat-resistant resin layer B. That is, the process release film of the present embodiment may be a process release film that is a laminated film including a release layer A, a heat-resistant resin layer B, and a release layer A′ in this order.
  • the contact angle of the release layer A′ to water is preferably 90° to 130°, more preferably 95° to 120°, and particularly preferably 98° to 115°, more preferably 100° to 110°. Details such as preferable materials of the release layer A′ are the same as those described above for the release layer A.
  • the surface of the release layer A′ may or may not have irregularities having an Sdr (development interface area ratio) of 4.0 to 50.0%. When required, it is preferable that the unevenness is not formed. On the other hand, when both surfaces are required to have excellent degassing properties, unevenness may be formed.
  • the release layer A and the release layer A' may be layers of the same configuration, or may be layers of different configurations. From the viewpoint of prevention of warping and ease of handling by having the same releasability on both sides, it is preferable that the release layer A and the release layer A' have the same or substantially the same configuration. Preferably, the release layer A and the release layer A' are optimally designed in relation to the process using them. From the viewpoint of making the layer A' excellent in releasability from the molding, it is preferable that the release layer A and the release layer A' have different structures. When the release layer A and the release layer A' have different structures, the release layer A and the release layer A' may be made of the same material and have different structures such as thickness. However, the materials and other configurations may be different.
  • Heat-resistant resin layer B The heat-resistant resin layer B that constitutes the process release film of the present embodiment supports the release layer A (and the release layer A′ in some cases) and has the function of suppressing the occurrence of wrinkles due to mold temperature and the like. . Any resin layer including a non-stretched film can be used for the heat-resistant resin layer B, but it is particularly preferable to include a stretched film.
  • the stretched film may be a uniaxially stretched film or a biaxially stretched film.
  • a uniaxially stretched film it may be longitudinally stretched or transversely stretched, but it is desirable that the film is stretched at least in the transverse (TD) direction.
  • the method and apparatus for obtaining the stretched film are not particularly limited, and stretching may be performed by a method known in the art. For example, it can be stretched with a heating roll or a tenter-type stretching machine.
  • the stretched film it is preferable to use a stretched film selected from the group consisting of a stretched polyester film, a stretched polyamide film, and a stretched polypropylene film.
  • stretched films are relatively easy to reduce or make the coefficient of thermal expansion in the transverse (TD) direction negative by stretching, and have mechanical properties suitable for the application of the present embodiment, Moreover, it is particularly suitable as a stretched film in the heat-resistant resin layer B because it is inexpensive and relatively easily available.
  • stretched polyester film a stretched polyethylene terephthalate (PET) film and a stretched polybutylene terephthalate (PBT) film are preferable, and a biaxially stretched polyethylene terephthalate (PET) film is particularly preferable.
  • Polyamide constituting the stretched polyamide film is not particularly limited, but polyamide-6, polyamide-66 and the like can be preferably used.
  • oriented polypropylene film a uniaxially oriented polypropylene film, a biaxially oriented polypropylene film, or the like can be preferably used. There is no particular limitation on the draw ratio, and an appropriate value may be appropriately set in order to appropriately control the thermal dimensional change rate and achieve suitable mechanical properties.
  • the heat-resistant resin layer B has heat resistance that can withstand the temperature of the mold during molding (typically 120 to 180 ° C.) from the viewpoint of controlling the strength of the film and its thermal dimensional change rate within an appropriate range. is preferred.
  • the heat-resistant resin layer B preferably contains a crystalline resin having a crystalline component, and the melting point of the crystalline resin is preferably 125° C. or higher, and the melting point is 155° C. or higher and 300° C. or lower. is more preferably 185° C. or higher and 210° C. or lower, and particularly preferably 185° C. or higher and 205° C. or lower.
  • the heat-resistant resin layer B preferably contains a crystalline resin having a crystalline component.
  • a crystalline resin such as polyester resin, polyamide resin, or polypropylene resin can be used partially or wholly.
  • polyethylene terephthalate or polybutylene terephthalate for the polyester resin
  • polyamide 6 or polyamide 66 for the polyamide resin
  • isotactic polypropylene for the polypropylene resin.
  • the resin constituting the heat-resistant resin layer B preferably has a crystal melting heat quantity of 20 J/g or more and 100 J/g or less in the first heating step measured by differential scanning calorimetry (DSC) according to JISK7221. It is more preferably 25 J/g or more and 65 J/g or less, more preferably 25 J/g or more and 55 J/g or less, more preferably 28 J/g or more and 50 J/g or less, and 28 J/g or more.
  • it is 20 J/g or more, it is possible to effectively exhibit heat resistance and releasability that can withstand hot press molding in a resin encapsulation process or the like, and it is also possible to slightly suppress the dimensional change rate. , the occurrence of wrinkles can also be prevented.
  • the heat of crystal fusion is 100 J/g or less, the heat-resistant resin layer B can be given an appropriate degree of hardness. In addition to being able to prevent damage to the film, it is possible to effectively suppress damage to the film.
  • the heat of crystal fusion is the amount of heat (J/g) on the vertical axis and the amount of heat (J/g) on the horizontal axis obtained in the first heating step in the measurement by differential scanning calorimetry (DSC) according to JISK7221.
  • DSC differential scanning calorimetry
  • a chart showing the relationship with temperature (°C) it refers to a numerical value obtained by summing peak areas having a peak at 120°C or higher.
  • the amount of heat of crystal fusion of the heat-resistant resin layer B can be adjusted by appropriately setting heating and cooling conditions during film production and stretching conditions.
  • the thickness of the heat-resistant resin layer B is not particularly limited as long as the film strength can be secured, but it is usually 1-100 ⁇ m, preferably 5-50 ⁇ m.
  • the process release film of the present embodiment may have layers other than the release layer A, the heat-resistant resin layer B, and the release layer A′ as long as the object of the present invention is not compromised.
  • an adhesive layer may be provided between the release layer A (or release layer A') and the heat-resistant resin layer B, if necessary.
  • the material used for the adhesive layer is not particularly limited as long as it can firmly bond the release layer A and the heat-resistant resin layer B and does not separate in the resin sealing process and the release process.
  • the adhesive layer is modified 4-methyl-1 graft-modified with an unsaturated carboxylic acid or the like.
  • -Pentene-based copolymer resin, olefin-based adhesive resin composed of 4-methyl-1-pentene-based copolymer and ⁇ -olefin-based copolymer, and the like are preferable.
  • the adhesive layer is preferably a polyester-based, acrylic-based, or fluoro-rubber-based adhesive.
  • the thickness of the adhesive layer is not particularly limited as long as the adhesion between the release layer A (or release layer A') and the heat-resistant resin layer B can be improved, but is, for example, 0.5 to 10 ⁇ m.
  • the method for producing the release film for process of the present invention is not particularly limited, but it is preferably produced by a production method having the following steps. ⁇ A process of blasting the surface of a metal roll using particles with a particle size of 40 to 100 mesh to produce a metal embossing roll. A step of forming unevenness on the surface of the film by passing it through a gap between the above steps. By using the manufacturing method having the above steps, unevenness is formed on at least one of the two surfaces, and the unevenness is formed.
  • the process release film of the present invention which has an Sdr (developed interface area ratio) of 4.0 to 50.0% as measured by a laser microscope on at least one of the surfaces where the , and Sdr can be set to a desired value with high controllability. Furthermore, it is easy to impart desirable characteristics such as the above-described predetermined RPc (peak count). In addition, when unevenness is formed on both sides, the film may be passed between the embossing roll and another roll twice, or may be passed between the embossing rolls once. The former method is usually used.
  • the surface of the metal roll is subjected to blasting treatment using particles having a particle size of 40 to 100 mesh to manufacture the metal embossing roll.
  • a step of The process of manufacturing the metal embossing roll may have a process operation of blasting the surface of the metal roll using particles with a particle size of 40 to 100 mesh, and has other process operations.
  • the surface of the metal roll may be blasted with particles having a particle size of 40 to 100 mesh without any other process operation.
  • Other process operations include the process of blasting the surface of the metal roll using particles outside the range of particle size 40 to 100 mesh, and the process of forming an uneven pattern by a mill roll method, a resist corrosion method, or the like. operations and the like can be mentioned.
  • the surface of the metal roll is blasted using particles having a particle size of 40 to 100 mesh, thereby forming a metal embossing roll having an appropriate uneven shape. It is possible to manufacture efficiently, and in the subsequent step, the film is passed between the metal embossing roll and another roll to form unevenness on the film surface, so that at least one of the two surfaces
  • the Sdr development interface area ratio
  • the metal roll used in the above step one having a metal substrate provided on the entire surface of an iron core is preferably used.
  • the metal substrate is not particularly limited as long as it is commonly used for embossing rolls, and examples thereof include metals such as zinc, copper, brass, aluminum, iron, stainless steel, and chromium. Among them, copper is preferable because of the excellent stability of formation of the uneven pattern in the corrosion method.
  • the thickness of the metal substrate may be set in consideration of the ability to cover the maximum height difference of the uneven pattern of the embossed plate. A thickness of ⁇ 1500 ⁇ m is preferred.
  • the type of embossed pattern is not particularly limited, and may be formed in various shapes such as satin finish and hairline.
  • the surface of the metal roll is subjected to blasting treatment using particles having a particle size of 40 to 100 mesh at least once to manufacture the metal embossing roll.
  • the blasting treatment may be performed twice or more, in which case particles with a particle size of 40 to 100 mesh may be used in all of the two or more blasting treatments. Particles with particle sizes outside the 100 mesh range may also be used. When blasting is performed twice or more, particles with the same particle size may be used in all of the blasting treatments, or particles with different particle sizes may be used.
  • the particle size of the particles used for blasting is particularly preferably 80-100 mesh.
  • the material of the particles used in the blasting treatment is not particularly limited. For example, inorganic particles such as alumina, iron, silicon carbide, chromium oxide, and iron oxide can be preferably used.
  • Blasting can be performed, for example, by blowing particles such as those described above from the tip of a nozzle, for example, by the force of compressed air.
  • the pressure of the compressed air is preferably in the range of 200-500 kPa. If it is 200 kPa or more, it is possible to form unevenness with a depth that can sufficiently exhibit the effects of the present invention, and if it is 500 kPa or less, it is possible to prevent the above effects from being hindered by destroying the uneven pattern. be able to. From the above point of view, it is more preferable that the pressure range of the compressed air is in the range of 300 to 400 kPa.
  • the blasting treatment is preferably carried out at room temperature, and the time for which the particles are sprayed is preferably about 0.01 to 0.5 seconds. Further, the nozzle may be scanned so as to satisfy the spraying time condition according to the spraying area of the particles projected from the nozzle.
  • a chromium layer from the viewpoint of imparting a function as a protective layer.
  • the chromium layer may be applied before or after blasting. Also, the chromium layer may be laminated both before and after the blasting treatment.
  • chromium used for lamination of the chromium layer from chromium smooth enough to have luster to completely matt chromium, and the chromium layer is laminated before or after blasting. It can be selected as appropriate in consideration of crabs and the like. If the chromium layer is laminated before blasting, it is preferable to use a highly glossy one. A chromium layer that is smoother with higher gloss is more durable and is therefore excellent as a protective layer. Also, the reproducibility as an embossed plate is improved. Further, when the chromium layer is laminated before the blasting treatment, the thickness of the chromium layer is preferably 30 ⁇ m or more so as not to damage the chromium layer by the blasting treatment. Furthermore, in consideration of economic efficiency, etc., the range of 30 to 50 ⁇ m is more preferable.
  • the thickness of the chromium layer is not particularly limited as long as it can function as a protective layer and the luster can be controlled. There is no particular limitation on the method of laminating the chromium layer, and the chromium layer can be easily applied by plating, for example.
  • the chromium layer preferably has a Mohs hardness of about 7 (about 6 to 8).
  • Step of Forming Irregularities on the Film Surface in addition to the above-described step of manufacturing the metal embossing roll, the film is placed between the metal embossing roll and another roll. and forming irregularities on the surface of the film by passing through.
  • this step of forming unevenness on the film surface unevenness is formed on at least one of the two surfaces of the release film for processing of the present invention with high efficiency, and at least one of the surfaces on which the unevenness is formed.
  • Sdr read interface area ratio measured with a laser microscope can be 4.0 to 50.0%.
  • the metal embossing roll obtained in the process of manufacturing the metal embossing roll described above is used to form irregularities on the film surface without any particular restrictions on specific operations and conditions.
  • the same operations and conditions as the embossing process in the technical field can be appropriately adopted.
  • a metal embossing roll with a built-in heater is heated to 60 to 200° C., and a single-layer film or laminated film before unevenness formation is passed between the metal embossing roll and other rolls and pressurized. , can form unevenness.
  • the film may be preheated in a drying oven or in contact with a heating roll.
  • the pressure is preferably 30-150 kgf/cm. It is preferable to cool the film after pressurization and shaping.
  • the metal embossing roll and other rolls are preferably arranged in a suitable apparatus, such as known sheet-fed or rotary embossing machines.
  • the method for producing the release film for process use is not particularly limited. 1) Prior to the step of forming unevenness on the film surface, the release layer A and the heat-resistant resin layer B are co-extruded and laminated to produce a film before unevenness is formed, and the unevenness is formed on the film surface. By subjecting it to the step of performing, a release film for a process can be produced. 2) Alternatively, the molten resin of the release layer A and the adhesive layer is applied and dried on the film that will be the heat-resistant resin layer B, or the resin that will be the release layer A and the adhesive layer is dissolved in a solvent.
  • the film may be manufactured by coating and drying the resin solution obtained before the unevenness is formed. 3) Further, a method of manufacturing a release film for a process by preliminarily manufacturing a film to be a release layer A and a film to be a heat-resistant resin layer B and laminating these films. can also be adopted. In this case, the surface of the film to be the release layer A may be pre-formed with unevenness. That is, only the film to be the release layer A may be subjected to the step of forming unevenness on the film surface.
  • each resin film is laminated using an adhesive.
  • the adhesive one known as an adhesive for dry lamination can be used.
  • polyvinyl acetate-based adhesives for example, polyvinyl acetate-based adhesives; homopolymers or copolymers of acrylic esters (ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, etc.), or acrylic esters and other monomers (methacrylic acid cyanoacrylate-based adhesives; ethylene and other monomers (vinyl acetate, ethyl acrylate, acrylic acid, methacrylic acid) Ethylene copolymer adhesives made of copolymers, etc.) Cellulose adhesives Polyester adhesives Polyamide adhesives Polyimide adhesives Amino resins made of urea resin or melamine resin Adhesives; Phenolic resin adhesives; Epoxy adhesives; Polyurethane adhesives crosslinked with polyols (polyether polyols, polyester polyols, etc.) and isocyanates and/or isocyanurates; Reactive (meth)acrylic adhesives rubber
  • the resin film to be laminated by the method of 3 a commercially available one may be used, or one produced by a known production method may be used.
  • the resin film may be subjected to surface treatment such as corona treatment, atmospheric pressure plasma treatment, vacuum plasma treatment, and primer coating treatment.
  • the method for producing the resin film is not particularly limited, and known production methods can be used.
  • the co-extrusion molding method is preferable in that defects such as foreign matter being caught between the resin layer serving as the release layer A and the resin layer serving as the heat-resistant resin layer B and warping of the release film are less likely to occur. .
  • the lamination method is a suitable manufacturing method when a stretched film is used for the heat-resistant resin layer B. In this case, it is preferable to form an appropriate adhesive layer on the interface between the films as necessary. In order to improve the adhesiveness between the films, the interface between the films may be subjected to surface treatment such as corona discharge treatment, if necessary.
  • the process release film may optionally be uniaxially or biaxially stretched to increase the film strength of the film. Stretching may be performed before or after the step of forming unevenness on the film surface. It is preferable to carry out before the step of forming unevenness on the surface.
  • coating method is not particularly limited, for example, various coaters such as a roll coater, a die coater, and a spray coater are used.
  • the melt extrusion means is not particularly limited, but for example, an extruder having a T-type die or an inflation type die is used.
  • the process release film of the present invention can be used by placing it between the semiconductor chip or the like and the inner surface of the mold when the semiconductor chip or the like is placed in the mold and resin is injected and molded.
  • the resin used in the above manufacturing process may be either a thermoplastic resin or a thermosetting resin, but thermosetting resins are widely used in the technical field, and epoxy-based thermosetting resins are particularly used. It is preferable to use
  • the most typical example of the manufacturing process is the sealing of semiconductor chips, but the present invention is not limited to this, and can also be applied to fiber-reinforced plastic molding processes, plastic lens molding processes, and the like. .
  • FIG. 1 is a schematic diagram showing an example of a method for producing a resin-encapsulated semiconductor using the release film of the present invention.
  • the release film 1 of the present invention is fed into a mold 8 from a roll-shaped roll by rolls 1-2 and 1-3.
  • the release film 1 is arranged on the inner surface of the upper mold 2 .
  • the inner surface of the upper mold 2 is evacuated from the suction port 3 to bring the release film 1 into close contact with the inner surface of the upper mold 2 . Since the process release film 1 of the present invention is excellent in deaeration in the lateral direction, the deaeration time is shortened, and resin-encapsulated semiconductors can be produced with high productivity.
  • the adhesion to the inner surface of the upper mold 2 is also excellent, the occurrence of wrinkles is suppressed, and a resin-encapsulated semiconductor with a good appearance can be manufactured.
  • the surface on which the unevenness is formed and the surface having an Sdr (development interface area ratio) of 4.0 to 50.0% is used as the upper die. 2 Arrange so as to face the inner surface.
  • a semiconductor chip 6 arranged on a substrate is arranged in a lower mold 5 of a molding machine, and a sealing resin is arranged on the semiconductor chip 6, or a liquid sealing resin is applied so as to cover the semiconductor chip 6.
  • the sealing resin 4 is accommodated between the upper mold 2 and the lower mold 5 on which the release film 1 is placed and which is exhausted and sucked.
  • the upper mold 2 and the lower mold 5 are closed via the release film 1 of the present invention, and the sealing resin 4 is cured.
  • the sealing resin 4 is fluidized in the mold by the mold closing and hardening, and the sealing resin 4 flows into the space and surrounds the side surface of the semiconductor chip 6, thereby filling the sealed semiconductor.
  • the upper mold 2 and the lower mold 5 are opened and the chip 6 is taken out.
  • the release film 1 is repeatedly used, or a new release film is supplied, and the next resin molding is performed.
  • the release film of the present invention is adhered to the upper mold, interposed between the mold and the sealing resin, and resin-molded to prevent the resin from adhering to the mold and prevent the resin mold surface of the mold from becoming dirty. and the molded article can be easily released from the mold. It should be noted that the release film can be newly supplied for each resin molding operation and resin-molded, or can be newly supplied for each resin-molding operation to be resin-molded.
  • the encapsulating resin may be a liquid resin or a resin that is solid at room temperature, but a sealing material that becomes liquid when resin-encapsulated can be used as appropriate.
  • epoxy resins biphenyl type epoxy resins, bisphenol epoxy resins, o-cresol novolac type epoxy resins, etc.
  • polyimide resins Bismaleimide-based resins
  • silicone-based resins thermosetting addition type
  • the resin sealing conditions may vary depending on the sealing resin used, but may be appropriately set, for example, within the range of curing temperature of 120° C. to 180° C., molding pressure of 10 to 50 kg/cm 2 , and curing time of 1 to 60 minutes. can.
  • the release film 1 may be placed after placement, or the semiconductor chip 6 may be placed after the release film 1 is placed.
  • the process release film 1 of the present invention has high releasability, so that the semiconductor package 4-2 can be easily released from the mold. Moreover, since the release film 1 has an appropriate degree of flexibility, it is difficult to wrinkle due to the heat of the molding die 8 while being excellent in followability to the shape of the die. Therefore, the sealed semiconductor package 4-2 with good appearance is prevented from being transferred wrinkles to the resin-sealed surface of the sealed semiconductor package 4-2 and without causing a portion not filled with resin (resin chipping). You can get 4-2. Furthermore, since the release film 1 is excellent in degassing property in the horizontal direction, degassing time is shortened when it is brought into close contact with the inner surface of the upper mold 2, and resin-encapsulated semiconductors can be manufactured with high productivity.
  • the method for manufacturing a resin-encapsulated semiconductor using the process release film of the present invention is not limited to the compression molding method in which the solid encapsulating resin material 4 is pressurized and heated as shown in FIG.
  • a transfer molding method for injecting a sealing resin material may be employed.
  • the release film of the present invention is not limited to the process of resin-encapsulating a semiconductor element, but also the process of molding and releasing various molded products using a molding die, such as fiber-reinforced plastic molding and mold release process, plastic lens molding Also, it can be preferably used in the mold release step and the like.
  • RPc Peak count
  • the peak count of the uneven surface (release layer A side) was measured based on JIS B0601:2013 (ISO4287:1997, Amd.1:2009).
  • the reference length was set to 10 mm.
  • a surface roughness measuring machine SURFCOM 130A manufactured by Tokyo Seimitsu Co., Ltd. was used, and three points were measured in the direction (TD direction) perpendicular to the flow direction during film production, and in the direction parallel (MD direction ), the RPc was determined for a total of 6 locations (3 locations), and the average value thereof was taken as the RPc of the surface.
  • the release film for process is arranged with a tension of 10 N applied between the upper mold and the lower mold (the uneven surface (release layer A side) is on the upper mold side ), and then vacuum-adsorbed to the parting surface of the upper mold. At this time, the time required for the air to completely escape was measured.
  • WCM-300MS manufactured by Apic Yamada Co., Ltd. was used as a semiconductor encapsulation molding apparatus. A mold having a circular parting surface of the upper mold with a diameter of 300 mm was used. The mold temperature was 120°C.
  • the process release film was vacuum-adsorbed to the parting surface of the upper mold (the uneven surface (release layer A side) was the upper mold side), and then the substrate was placed so as to cover the semiconductor chip.
  • a semiconductor chip fixed to the substrate was placed on the lower mold and clamped.
  • the mold temperature was 120° C.
  • the molding pressure was 10 MPa
  • the molding time was 400 seconds.
  • the resin-sealed semiconductor chip was released from the release film.
  • the releasability of the release film was evaluated according to the following criteria. ⁇ : The release film is naturally peeled off at the same time as the mold is opened. ⁇ : The release film does not peel off naturally, but can be easily peeled off by hand pulling (applying tension). x: The release film adhered to the resin sealing surface of the semiconductor package and could not be peeled off by hand.
  • Example 1 Heat-resistant resin layer B
  • a biaxially oriented PET (polyethylene terephthalate) film manufactured by Toray Industries, Inc., product name: Lumirror S10 having a film thickness of 12 ⁇ m was used.
  • Release layers A and A' Unstretched 4-methyl-1-pentene copolymer resin films were used as the release layers A and A'. Specifically, a 4-methyl-1-pentene copolymer resin manufactured by Mitsui Chemicals, Inc.
  • Urethane-based adhesive A was used as the adhesive used in the dry lamination step for laminating each film.
  • Main agent Takelac (registered trademark) A-616 (manufactured by Mitsui Chemicals, Inc.).
  • Curing agent Takenate (registered trademark) A-65 (manufactured by Mitsui Chemicals, Inc.). The main agent and the curing agent were mixed so that the mass ratio (main agent:curing agent) was 16:1, and ethyl acetate was used as the diluent.
  • urethane-based adhesive A was applied at 1.5 g/m 2 by gravure coating, and a non-stretched 4-methyl-1-pentene copolymer resin film was obtained. After laminating the corona-treated surface by dry lamination, urethane-based adhesive A was applied at 1.5 g/m 2 to the biaxially oriented PET (polyethylene terephthalate) film surface side of the laminate film.
  • the corona-treated surface of the stretched 4-methyl-1-pentene copolymer resin film is laminated by dry lamination to form a five-layer structure (release layer A / adhesive layer / heat-resistant resin layer B / adhesive layer / release layer A ') was obtained.
  • Dry lamination conditions were as follows: base material width 900 mm, transport speed 30 m/min, drying temperature 50 to 60° C., lamination roll temperature 50° C., roll pressure 3.0 MPa.
  • a laminate film having a five-layer structure (release layer A/adhesive layer/heat-resistant resin layer B/adhesive layer/release layer A′) prepared above is placed between the pair of metal embossing rolls and rubber rolls prepared above. , and unevenness was imparted to the release layer A side surface of the film to prepare a process release film of Example 1.
  • the conditions for embossing were a conveying speed of 5 m/min, a metal embossing roll temperature of 120° C., and an inter-roll pressure of 75 kgf/cm.
  • Table 1 shows the evaluation results of the surface roughness (Sdr and RPc), water contact angle, tensile modulus, degassing time, releasability, wrinkles, and mold followability of the process release film produced above. .
  • Example 2 In the production of the metal embossing roll, a process release film was produced in the same manner as in Example 1, except that the alumina particles with a particle size of 40 mesh and then alumina particles with a particle size of 100 mesh were uniformly blasted in that order. ,evaluated. The results are shown in Table 1.
  • the process release film had a shorter degassing time than that of Example 1, and had good releasability, suppression of wrinkles, and mold followability.
  • Example 3 In the production of the metal embossing roll, a process release film was produced in the same manner as in Example 1, except that the alumina particles with a particle size of 80 mesh and then alumina particles with a particle size of 100 mesh were uniformly blasted in that order. ,evaluated. The results are shown in Table 1.
  • the process release film had a shorter degassing time than that of Example 1, and had good releasability, suppression of wrinkles, and mold followability.
  • Example 4 A process release film was produced and evaluated in the same manner as in Example 1, except that the temperature of the metal embossing roll was set to 150° C. when forming the irregularities on the film surface. The results are shown in Table 1. The process release film had a shorter degassing time than that of Example 1, and had good releasability, suppression of wrinkles, and mold followability.
  • Example 1 In the production of the metal embossing roll, a process release film was produced and evaluated in the same manner as in Example 1, except that alumina particles with a particle size of 100 mesh were uniformly blasted. The results are shown in Table 1. Although the process release film had good releasability, wrinkle suppression, and mold followability, the degassing time was longer than in each of the above examples.
  • the process release film of the present invention exhibits high degassing properties that could not be achieved by conventional techniques, and also exhibits high degassing properties, excellent releasability, wrinkle suppression performance, and mold followability compared to conventional technologies. Since it is combined at a high level that exceeds the limit, by using this, it is possible to manufacture molded products obtained by resin-sealing semiconductor chips etc. with high productivity and quality beyond the limits of conventional technology. It brings about technical effects of high practical value, such as being able to make it possible, and has high applicability in various fields of industry including the semiconductor process industry.
  • the process release film of the present invention can be used not only for semiconductor packages but also for various mold molding processes such as fiber-reinforced plastic molding processes and plastic lens molding processes. It has high applicability in each field of industry that conducts

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Abstract

The present invention provides a mold release film for processing, which enables the production of a resin-sealed semiconductor or the like with a high productivity that exceeds the limits of the prior art by having high deaeration properties, while maintaining properties such as excellent mold releasability, excellent appearance of molded articles and excellent followability to a mold, these properties having been required for mold release films for processing in the past, and achieving a good balance among these properties at high levels that exceed the limits of the prior art. The above are achieved by means of a mold release film for processing, which is provided with recesses and projections on at least one of two surfaces, wherein the developed interfacial area ratio (Sdr) of the surface that is provided with the recesses and projections is 4.0% to 50.0% as measured with a laser microscope.

Description

プロセス用離型フィルム、その製造方法、及び用途。Release film for process, its manufacturing method, and use.
　本発明は、プロセス用離型フィルム、好適には半導体封止工程等において使用されるプロセス用離型フィルムに関し、特に半導体封止工程等における真空吸着時のエアー抜けに要する時間が短く、高い生産効率で樹脂封止半導体等を生産可能である、プロセス用離型フィルム、その製造方法、及びそれを用いた樹脂封止半導体の製造方法に関する。 The present invention relates to a process release film, preferably a process release film used in a semiconductor encapsulation process or the like. The present invention relates to a process release film, a method for producing the same, and a method for producing a resin-sealed semiconductor using the same, which enables efficient production of resin-sealed semiconductors and the like.
　近年、半導体パッケージ等の小型軽量化に伴い、封止樹脂の使用量を減らすことが検討されている。そして、封止樹脂の使用量を減らしても、半導体チップ等と樹脂との界面を強固に接着できるようにするため、封止樹脂に含まれる離型剤の量を減らすことが望まれている。このため、硬化成形後の封止樹脂と金型との離型性を得る方法として、金型内面と半導体チップ等との間に離型フィルムを配置する方法が採られている。 In recent years, with the reduction in size and weight of semiconductor packages, etc., it is being considered to reduce the amount of sealing resin used. It is desired to reduce the amount of release agent contained in the sealing resin so that the interface between the semiconductor chip and the resin can be firmly adhered even if the amount of the sealing resin used is reduced. . For this reason, a method of disposing a release film between the inner surface of the mold and the semiconductor chip or the like has been adopted as a method of obtaining mold releasability between the sealing resin and the mold after curing and molding.
　封止の際、離型フィルムは、通常、真空吸引によって金型内面に沿って引き延ばされ、内面に密着した状態とされる。このとき、引き延ばされる途中で空気が完全に抜けない状態で離型フィルムが内面に密着し、離型フィルムと金型内面との間に部分的に空気溜まりが形成され、その部分で離型フィルムに皺が生じることがある。離型フィルムに皺があると、樹脂封止部の表面に離型フィルム表面の皺の形状が転写されて外観不良となり、歩留まりが低下する等の問題が生じ得るため、良好な脱気、及びそれによる皺の抑制が求められていた。また、この際に離型フィルムにピンホール等が発生すると金型の汚染が生ずるので、ピンホール等を有効に抑制する必要もあった。
　この様な問題を解決するため、離型フィルム表面に特定の条件を満たす凹凸を設けることが提案されており、より具体的には、例えば特定の表面粗さ（Ｒｚ）を有する離型フィルム（例えば、特許文献１参照）や、特定の算術平均粗さ（Ｒａ）及び特定のピークカウント（ＲＰｃ）を有する離型フィルム（例えば、特許文献２参照）等が提案されている。 At the time of sealing, the release film is usually stretched along the inner surface of the mold by vacuum suction and brought into close contact with the inner surface. At this time, the release film adheres to the inner surface in a state in which the air is not completely released while being stretched, and an air pool is partially formed between the release film and the inner surface of the mold, and the release film is formed at that part. The film may wrinkle. If the release film has wrinkles, the shape of the wrinkles on the release film surface is transferred to the surface of the resin sealing portion, resulting in poor appearance and problems such as a decrease in yield. Suppression of wrinkles caused by this has been desired. In addition, if pinholes or the like occur in the release film at this time, the mold will be contaminated, so it has been necessary to effectively suppress pinholes and the like.
In order to solve such problems, it has been proposed to provide unevenness that satisfies specific conditions on the release film surface. More specifically, for example, a release film having a specific surface roughness (Rz) ( For example, see Patent Document 1), a release film having a specific arithmetic mean roughness (Ra) and a specific peak count (RPc) (see Patent Document 2, for example), and the like have been proposed.
特開２００２－３５９２５９号公報JP-A-2002-359259 国際公開第２０１５／０６８８０８　Ａ１号パンフレットInternational Publication No. 2015/068808 A1 pamphlet
　しかしながら、当該技術分野の発展に伴い半導体封止プロセス用離型フィルム等のプロセス用離型フィルムに対する要求水準は年々高まっており、特により高い生産性の観点から、離型フィルムと金型内面との間のエアー抜けを一層短時間で完了できる、高い脱気性が求められるに至っている。
　本発明は、このような事情を鑑みてなされたものであり、高い脱気性を有することで、樹脂封止半導体等を従来技術の限界を超えた高い生産性で生産できるとともに、従来からプロセス用離型フィルムに求められていた、優れた離型性、成形品の外観、金型追従性等を維持し、これらが従来技術の限界を超えた高いレベルでバランスした、プロセス用離型フィルムを提供することを目的とする。 However, with the development of this technical field, the level of demand for release films for processes such as release films for semiconductor encapsulation processes is increasing year by year. A high degassing property that can complete the air evacuation in a shorter time has come to be demanded.
The present invention has been made in view of such circumstances. A process release film that maintains the excellent release properties, appearance of molded products, mold followability, etc., which are required for release films, and balances these at a high level that exceeds the limits of conventional technology. intended to provide
　本発明者らは上記課題を解決するために鋭意検討を重ねた結果、プロセス用離型フィルム表面のＳｄｒ（展開界面面積率）を適切な値とすることが、プロセス用離型フィルムとしての他の諸特性を損なわずに高い脱気性を実現するために重要であることを見出し、本発明を完成するに至った。
　すなわち本発明及びその各実施形態は、下記［１］から［９］に記載のとおりである。 As a result of intensive studies by the present inventors in order to solve the above problems, it is found that setting the Sdr (spreading interface area ratio) of the surface of the release film for processing to an appropriate value is the release film for processing. have found that it is important for achieving high degassing properties without impairing the properties of the above, and have completed the present invention.
That is, the present invention and its respective embodiments are as described in [1] to [9] below.
［１］
　２面のうち少なくとも一方の面に凹凸が形成されており、該凹凸が形成されている面のレーザー顕微鏡で測定したＳｄｒ（展開界面面積率）が４．０～５０．０％である、プロセス用離型フィルム。
［２］
　該凹凸が形成されていてＳｄｒ（展開界面面積率）が４．０～５０．０％である面のＲＰｃ（ピークカウント）が３０～８７である、［１］に記載のプロセス用離型フィルム。
［３］
　該凹凸が形成されていてＳｄｒ（展開界面面積率）が４．０～５０．０％である面、の反対側の面の水接触角が９０～１３０°である、［１］又は［２］に記載のプロセス用離型フィルム。
［４］
　厚みが１０～１００μｍである、［１］～［３］のいずれか一項に記載のプロセス用離型フィルム。
［５］
　１２０℃における引張弾性率が３０～５００ＭＰａである、［１］～［４］のいずれか一項に記載のプロセス用離型フィルム。
［６］
　１７０℃における引張弾性率が２０～４００ＭＰａである、［１］～［５］のいずれか一項に記載のプロセス用離型フィルム。
［７］
　金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いてブラスト処理を行い、金属製エンボスロールを製造する工程、及び
　フィルムを前記金属製エンボスロールと他のロールとの間を通過させて該フィルム表面に凹凸を形成する工程、
　を有する、［１］～［６］のいずれか一項に記載のプロセス用離型フィルムの製造方法。
［８］
　半導体封止工程において使用される、［１］～［６］のいずれか一項に記載のプロセス用離型フィルム。
［９］
　樹脂封止半導体の製造方法であって、
　成形金型内の所定位置に、樹脂封止される半導体装置を配置する工程と、
　前記成形金型内面に、［１］～［６］のいずれか一項に記載のプロセス用離型フィルムを、前記凹凸が形成されていてＳｄｒ（展開界面面積率）が４．０～５０．０％である面、が前記成形金型内面と対向するように配置する工程と、
　前記プロセス用離型フィルムと前記金型内面との間を脱気する工程と、
　前記成形金型を型締めした後、前記半導体装置と、前記半導体封止プロセス用離型フィルムとの間に配置された封止樹脂を硬化させる工程と、
　を有する、上記樹脂封止半導体の製造方法。 [1]
A process in which unevenness is formed on at least one of the two surfaces, and the surface on which the unevenness is formed has an Sdr (development interface area ratio) measured with a laser microscope of 4.0 to 50.0%. release film.
[2]
The process release film according to [1], wherein the RPc (peak count) of the surface on which the unevenness is formed and the Sdr (development interface area ratio) is 4.0 to 50.0% is 30 to 87. .
[3]
[1] or [2], wherein the water contact angle of the surface opposite to the surface on which the unevenness is formed and the Sdr (spread interface area ratio) is 4.0 to 50.0% is 90 to 130° ] The release film for the process described in .
[4]
The process release film according to any one of [1] to [3], which has a thickness of 10 to 100 μm.
[5]
The process release film according to any one of [1] to [4], which has a tensile elastic modulus of 30 to 500 MPa at 120°C.
[6]
The process release film according to any one of [1] to [5], which has a tensile elastic modulus of 20 to 400 MPa at 170°C.
[7]
A step of blasting the surface of the metal roll with particles having a particle size of 40 to 100 mesh to produce a metal embossing roll, and passing the film between the metal embossing roll and another roll forming irregularities on the surface of the film;
The method for producing a process release film according to any one of [1] to [6].
[8]
The process release film according to any one of [1] to [6], which is used in a semiconductor encapsulation step.
[9]
A method for manufacturing a resin-encapsulated semiconductor,
A step of placing a semiconductor device to be resin-sealed at a predetermined position in a molding die;
The release film for process according to any one of [1] to [6] is applied to the inner surface of the molding die so that the unevenness is formed and the Sdr (development interface area ratio) is 4.0 to 50.0. a step of arranging the surface with 0% so as to face the inner surface of the molding die;
deaeration between the process release film and the inner surface of the mold;
A step of curing the encapsulating resin disposed between the semiconductor device and the release film for semiconductor encapsulation process after clamping the molding die;
A method for manufacturing the resin-encapsulated semiconductor.
　本発明のプロセス用離型フィルムは、高い脱気性を有し、離型フィルムと金型内面との間のエアー抜けを短時間で完了できるとともに、優れた離型性、皺の抑制、及び金型追従性をも兼ね備えるので、これを用いることで、半導体チップ等を樹脂封止等して得られる成形品等を、従来技術の限界を超えた高い生産性及び品質で製造することができる。 The process release film of the present invention has high degassing properties, can complete air removal between the release film and the inner surface of the mold in a short time, and has excellent releasability, suppression of wrinkles, and metal mold. Since it also has mold followability, by using this, it is possible to manufacture molded articles obtained by resin-sealing semiconductor chips and the like with high productivity and quality beyond the limits of conventional technology.
本発明のプロセス用離型フィルムを用いた樹脂封止半導体の製造方法の一例を示す模式図である。BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows an example of the manufacturing method of the resin-sealed semiconductor using the release film for processes of this invention.
　本発明は、２面のうち少なくとも一方の面に凹凸が形成されており、該凹凸が形成されている面のレーザー顕微鏡で測定したＳｄｒ（展開界面面積率）が４．０～５０．０％である、プロセス用離型フィルム、である。
　本発明のプロセス用離型フィルムにおいては、その少なくとも一方の面に凹凸が形成されており、該凹凸面のＳｄｒ（展開界面面積率）が所定の数値範囲内であることによって、横方向への高い脱気性を実現し、例えば金型を用いた成形プロセスにおけるプロセス用離型フィルムとして用いた場合に、プロセス用離型フィルムと金型内面との間のエアー抜けを短時間で完了できるなど、成形プロセスの生産性の向上に寄与することができる。 In the present invention, unevenness is formed on at least one of the two surfaces, and the surface on which the unevenness is formed has an Sdr (development interface area ratio) of 4.0 to 50.0% measured with a laser microscope. It is a process release film.
In the mold release film for processing of the present invention, unevenness is formed on at least one surface thereof, and the Sdr (development interface area ratio) of the uneven surface is within a predetermined numerical range. Realizing high degassability, for example, when used as a process release film in a molding process using a mold, it is possible to complete the removal of air between the process release film and the inner surface of the mold in a short time. It can contribute to the improvement of the productivity of the molding process.
　本発明のプロセス用離型フィルムにおいては、２面のうち少なくとも一方の面に凹凸が形成されていればよく、すなわち一方の面のみに凹凸が形成されていてもよく、両方の面に凹凸が形成されていてもよい。
　プロセス用離型フィルムの多くの使用形態においては、金型の側に配置される一方の面の脱気性が重要であるため、一方の面に凹凸が形成されていれば足り、その場合一方の面のみに凹凸を形成することが、製造の簡便さ、コスト等の点で有利である。また、封止樹脂等の樹脂表面に平滑性が要求されるケースもあり、この観点から一方の面のみに凹凸が形成された離型フィルムが好ましく用いられる場合がある。
　両方の面に凹凸が形成されていると、両方の面に優れた脱気性、離型性等を付与することができる点で有利であり、また封止樹脂表面に少し凹凸が付与されるので、樹脂のフロー跡などをわかりづらくすることもできる。 In the mold release film for processing of the present invention, it is sufficient that at least one of the two surfaces has unevenness. That is, only one surface may have unevenness. may be formed.
In many usage forms of release films for processes, the degassing property of one surface located on the side of the mold is important, so it is sufficient if one surface has unevenness. Forming unevenness only on the surface is advantageous in terms of ease of manufacture, cost, and the like. In some cases, smoothness is required on the surface of a resin such as a sealing resin, and from this point of view, a release film having unevenness formed only on one surface is preferably used in some cases.
Forming unevenness on both surfaces is advantageous in that both surfaces can be provided with excellent degassing properties and releasability. , traces of resin flow, etc. can be made difficult to understand.
　凹凸の形状には特に制限は無く、例えば、梨地、ヘアライン、格子状、丸型状、角形状、星形状、等その他種々の形状に成型されていてよい。後述の粒度４０～１００メッシュの粒子を用いてブラスト処理を行い製造した金属製エンボスロールを用いて、凹凸を形成する場合には、製造の容易さ等の観点から、梨地等の形状であることが好ましい。 There are no particular restrictions on the shape of the unevenness, and for example, it may be formed into various shapes such as pear-skin, hairline, grid, round, square, star-shaped, and the like. When forming unevenness using a metal embossing roll manufactured by blasting using particles with a particle size of 40 to 100 mesh, which will be described later, the shape should be a satin finish or the like from the viewpoint of ease of production. is preferred.
　両方の面に凹凸が形成されている場合、そのうち一方の面の凹凸のみがＳｄｒが４．０～５０．０％であるという条件を満たしていてもよく、その両方の面の凹凸がＳｄｒが４．０～５０．０％であるという条件を満たしていてもよい。上述の様に多くの使用形態においては、金型の側に配置される一方の面の脱気性が重要であるため、その場合一方の面の凹凸のみがＳｄｒが４．０～５０．０％であるという条件を満たしていれば足り、また製造の簡便さ、コスト等の点で有利である。
　使用形態により両方の面に優れた脱気性等を付与する場合には、両方の面の凹凸がＳｄｒが４．０～５０．０％であるという条件を満たしていることが好ましい。 When unevenness is formed on both surfaces, only the unevenness on one surface may satisfy the condition that Sdr is 4.0 to 50.0%, and the unevenness on both surfaces may satisfy the condition that Sdr is 4.0 to 50.0%. It may satisfy the condition of 4.0 to 50.0%. As described above, in many usage forms, the degassing property of one surface located on the mold side is important, so in that case, only the unevenness on one surface has an Sdr of 4.0 to 50.0%. It suffices if the condition that
In the case of imparting excellent air-removing properties to both surfaces depending on the mode of use, it is preferable that the unevenness on both surfaces satisfies the condition that the Sdr is 4.0 to 50.0%.
　凹凸面の展開界面面積率（Ｓｄｒ）は、定義領域の面積に対して、実際の表面積がどれだけ増大しているかを示すものである。
　より具体的には、展開面積比Ｓｄｒは、下式により定義され、完全な平面においては、Ｓｄｒは０となり、４５°傾斜した一面においては、Ｓｄｒは０．４１４（４１．４％）となる。
Figure JPOXMLDOC01-appb-M000001
（式中、ｘ及びｙは定義領域の縦座標及び横座標、ｚは当該座標における高さ、Ａは定義領域の面積を示す。）
　Ｓｄｒは、当該技術分野において従来公知の方法で測定することができ、より具体的には、レーザー顕微鏡及び付属のソフトウェアを用いて測定、解析することができる。例えば、本願明細書中の実施例に記載の方法によって測定することができる。 The developed interface area ratio (Sdr) of the uneven surface indicates how much the actual surface area increases with respect to the area of the defined region.
More specifically, the developed area ratio Sdr is defined by the following formula, Sdr is 0 on a perfect plane, and Sdr is 0.414 (41.4%) on a 45° inclined plane. .
Figure JPOXMLDOC01-appb-M000001
(Wherein, x and y are the ordinate and abscissa of the defined area, z is the height at that coordinate, and A is the area of the defined area.)
Sdr can be measured by a method conventionally known in the art, and more specifically, it can be measured and analyzed using a laser microscope and accompanying software. For example, it can be measured by the method described in Examples in the present specification.
　Ｓｄｒが上記範囲内にあることで、横方向への高い脱気性等の本発明の効果が得られるメカニズムは必ずしも明らかではないが、Ｓｄｒで特定される表面の凹凸状態が所定範囲内にあることで、金型等との間に空気の十分な流路が確保され得ることと、何らかの関係があるものと推定している。
　一層優れた脱気性を実現したりする観点から、Ｓｄｒは、６％以上であることが好ましく、８％以上であることが特に好ましい。
　脱気性等の観点からＳｄｒは高い方が好ましく、本発明の目的との関係からは特に上限は存在しないが、通常の高分子材料を使用し、通常のコストで製造する場合、４０％以下となることが一般的であり、３０％以下であることがより一般的である。
　Ｓｄｒは、プロセス用離型フィルムの製造の条件や、表面処理等で表面の状態を調整することで適宜調整することができる。より具体的には、例えば、後述の金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いてブラスト処理を行い、金属製エンボスロールを製造する工程における粒子サイズ、同じく後述のフィルムを前記金属製エンボスロールと他のロールとの間を通過させて該フィルム表面に凹凸を形成する工程におけるエンボスロール温度、等を好適な値に設定することで、適宜調整することができる。 Although the mechanism by which the effects of the present invention, such as high degassing in the lateral direction, are obtained when Sdr is within the above range, it is not necessarily clear that the uneven state of the surface specified by Sdr is within a predetermined range. Therefore, it is presumed that there is some relationship with the fact that a sufficient air flow path can be secured between the mold and the like.
Sdr is preferably 6% or more, particularly preferably 8% or more, from the viewpoint of achieving even better degassing properties.
A higher Sdr is preferable from the viewpoint of degassability, and there is no particular upper limit from the relationship with the object of the present invention. is common, and 30% or less is more common.
The Sdr can be appropriately adjusted by adjusting the conditions for manufacturing the release film for processing and the state of the surface by surface treatment or the like. More specifically, for example, the surface of the metal roll described later is blasted with particles having a particle size of 40 to 100 mesh, and the particle size in the process of manufacturing the metal embossing roll. By setting the temperature of the embossing roll in the step of passing the film between a metal embossing roll and another roll to form irregularities on the film surface, etc., to suitable values, it is possible to make appropriate adjustments.
　本発明の離型フィルムにおいては、凹凸が形成されている面の少なくとも一方のＲＰｃ（ピークカウント）が３０～８７であることが好ましい。該凹凸面のＲＰｃが所定の数値範囲内であることによって、一層高い横方向への脱気性を実現し、例えば金型を用いた成形プロセスにおけるプロセス用離型フィルムとして用いた場合に、プロセス用離型フィルムと金型内面との間のエアー抜けを一層短時間で完了できるなど、成形プロセスの生産性の一層の向上に寄与することができる。
　本実施形態において、両方の面に凹凸が形成されている場合、そのうち一方の面の凹凸のみがＲＰｃ（ピークカウント）が３０～８７であるという条件を満たしていてもよく、その両方の面の凹凸がＲＰｃ（ピークカウント）が３０～８７であるという条件を満たしていてもよい。
　本実施形態におけるＲＰｃ（ピークカウント）が３０～８７である面は、上記のＳｄｒ（展開界面面積率）が４．０～５０．０％である面と同一の面であることが好ましい。 In the release film of the present invention, the RPc (peak count) of at least one of the uneven surfaces is preferably 30-87. When the RPc of the uneven surface is within a predetermined numerical range, a higher degassing property in the lateral direction is realized, and for example, when used as a release film for a process in a molding process using a mold, the process It can contribute to further improvement of the productivity of the molding process, such as completing the removal of air between the release film and the inner surface of the mold in a shorter time.
In this embodiment, when unevenness is formed on both surfaces, only one of the surfaces may satisfy the condition that the RPc (peak count) is 30 to 87. The unevenness may satisfy the condition that the RPc (peak count) is 30-87.
The surface having an RPc (peak count) of 30 to 87 in the present embodiment is preferably the same surface as the surface having an Sdr (ratio of developed interface area) of 4.0 to 50.0%.
　本発明におけるＲＰｃ（ピークカウント）は、ＪＩＳ　Ｂ０６０１　２０１３（ＩＳＯ４２８７：１９９７，Ａｍｄ．１：２００９）に基づき測定される、粗さ曲線に基づくピークカウント数であり、以下の式（Ｉ）で定義される。
　　ＲＰｃ＝Ｌ／ＲＳｍ　・・・（Ｉ）
　式（Ｉ）中、Ｌは基準長さを示し、１０ｍｍである。
　ＲＳｍは、粗さ曲線要素の平均長さを示し、ＪＩＳ  Ｂ０６０１：２０１３（ＩＳＯ４２８７：１９９７，Ａｍｄ．１：２００９）に基づき測定される。
　測定は、表面粗さ測定器を用いて測定することができ、より具体的には例えば本願実施例に記載の方法によって測定することができる。 RPc (peak count) in the present invention is a peak count number based on a roughness curve measured based on JIS B0601 2013 (ISO4287:1997, Amd.1:2009), and is defined by the following formula (I). be.
RPc=L/RSm (I)
In formula (I), L indicates a reference length of 10 mm.
RSm indicates the average length of roughness curve elements and is measured based on JIS B0601:2013 (ISO4287:1997, Amd.1:2009).
The measurement can be performed using a surface roughness measuring instrument, more specifically, for example, by the method described in Examples of the present application.
　ＲＰｃが上記範囲内にあることで、一層高い横方向へ脱気性等が実現されるメカニズムは必ずしも明らかではないが、ＲＰｃで特定されるピーク密度が所定範囲内にあることで、空気の流路の数、大きさが一層適切なものとなり、これが上記特定のＳｄｒと相俟って、金型等との間に空気の十分な流路が確保され得ることと、何らかの関係があるものと推定している。
　更に一層優れた脱気性を実現したりする観点から、ＲＰｃは、４０～８０であることが好ましく、５０～８０であることが特に好ましい。
　ＲＰｃは、プロセス用離型フィルムの製造の条件や、後述の表面処理等で表面の状態を調整することで適宜調整することができる。より具体的には、例えば、後述の金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いてブラスト処理を行い、金属製エンボスロールを製造する工程における粒子サイズ、同じく後述のフィルムを前記金属製エンボスロールと他のロールとの間を通過させて該フィルム表面に凹凸を形成する工程におけるエンボスロール温度、等を好適な値に設定することで、適宜調整することができる。 Although the mechanism by which higher lateral degassability is realized by RPc being within the above range is not necessarily clear, when the peak density specified by RPc is within a predetermined range, the air flow path It is presumed that there is some relationship with the fact that the number and size of are more appropriate, and that this, coupled with the above-mentioned specific Sdr, ensures a sufficient flow path for air between the mold and the like. are doing.
RPc is preferably 40 to 80, particularly preferably 50 to 80, from the viewpoint of achieving even better degassing properties.
RPc can be appropriately adjusted by adjusting the conditions for manufacturing the release film for the process and the state of the surface by the surface treatment described later. More specifically, for example, the surface of the metal roll described later is blasted with particles having a particle size of 40 to 100 mesh, and the particle size in the process of manufacturing the metal embossing roll. By setting the temperature of the embossing roll in the step of passing the film between a metal embossing roll and another roll to form irregularities on the film surface, etc., to suitable values, it is possible to make appropriate adjustments.
　本発明のプロセス用離型フィルムにおいては、少なくともＳｄｒが４．０～５０％を有する凹凸が形成されている面とは反対側の表面の水接触角が９０～１３０°であることが好ましい。該表面の水接触角が上記の数値範囲内にあることによって、本実施形態のプロセス用離型フィルムと被成型物との間で、一層優れた離型性を実現することができる。
　本実施形態のプロセス用離型フィルムにおいては、一方の面、即ちＳｄｒが４．０～５０％を有する凹凸が形成されている面とは反対側の表面の水接触角のみが９０～１３０°の範囲内にあってもよく、両方の面の水接触角がともに９０～１３０°の範囲内にあってもよい。例えば金型を用いた成形プロセスに使用する場合等に、金型からの剥離性と、被成形物からの剥離性とを共に向上させる観点からは、両方の面の水接触角がともに９０～１３０°の範囲内にあることが好ましい。 In the process release film of the present invention, it is preferable that the surface opposite to the surface on which unevenness having Sdr of 4.0 to 50% is formed has a water contact angle of 90 to 130°. When the water contact angle of the surface is within the above numerical range, it is possible to achieve even better releasability between the process release film of the present embodiment and the object to be molded.
In the process release film of the present embodiment, only one surface, that is, the surface opposite to the uneven surface having Sdr of 4.0 to 50%, has a water contact angle of 90 to 130°. and the water contact angles on both surfaces may be in the range of 90 to 130°. For example, when used in a molding process using a mold, from the viewpoint of improving both the releasability from the mold and the releasability from the molded object, both surfaces should have a water contact angle of 90 to 90. It is preferably in the range of 130°.
　本実施形態におけるフィルム表面の水接触角は、ＪＩＳ　Ｒ３２５７に準拠して、接触角測定器を用いて測定することができ、より具体的には、例えば本願実施例に記載の方法により測定することができる。
　離型フィルム表面の水接触角は、より好ましくは９５°から１２０°であり、更に好ましくは９８°から１１５°、特に好ましくは１００°から１１０°である。 The water contact angle of the film surface in the present embodiment can be measured using a contact angle measuring instrument in accordance with JIS R3257, and more specifically, for example, by the method described in the Examples of the present application. can be done.
The water contact angle of the release film surface is more preferably 95° to 120°, still more preferably 98° to 115°, and particularly preferably 100° to 110°.
　離型フィルム表面の水接触角は従来から当業界において慣用されている手段によって適宜増減することできるが、例えばフィルム表面の材質を適宜選択することで、表面の水接触角を上記の好ましい数値範囲内とすることができる。この観点から、本発明のプロセス用離型フィルムの表面は、フッ素樹脂、４－メチル－１－ペンテン（共）重合体、及びポリスチレン系樹脂からなる群より選ばれる樹脂を含むことが好ましい。また、離型性を向上し得る添加剤（離型剤）を使用したり、表面処理を行ったりしてもよい。
　使用し得る離型剤の種類には特に制限は無く、シリコーン系離型剤、メラミン系離型剤、ポリオレフィン系離型剤、エポキシ系離型剤、アクリル系離型剤、フッ素系離型剤、セルロース系離型剤、パラフィン系離型剤、エポキシ－メラミン系離型剤、長鎖アルキル系離型剤及びこれらの組み合わせからなる群より選択された少なくとも一つを適宜使用することができる。特にフッ素系離型剤、長鎖アルキル系離型剤等を使用することが好ましい。
　これら離型剤は、プロセス用離型フィルムの表面を構成する樹脂中に添加してもよいが、プロセス用離型フィルムの表面に塗布してもよい。
　また、本発明においてフィルムの表面に形成される凹凸の形状、密度、大きさ等を調整することによっても、水接触角を適宜調整することができる。 The water contact angle on the surface of the release film can be appropriately increased or decreased by means conventionally used in the industry. can be within From this point of view, the surface of the process release film of the present invention preferably contains a resin selected from the group consisting of fluororesin, 4-methyl-1-pentene (co)polymer, and polystyrene resin. In addition, an additive (mold release agent) capable of improving releasability may be used, or surface treatment may be performed.
There are no particular restrictions on the types of release agents that can be used, and silicone-based release agents, melamine-based release agents, polyolefin-based release agents, epoxy-based release agents, acrylic-based release agents, and fluorine-based release agents. , cellulose-based release agents, paraffin-based release agents, epoxy-melamine-based release agents, long-chain alkyl-based release agents, and combinations thereof. In particular, it is preferable to use fluorine-based release agents, long-chain alkyl-based release agents, and the like.
These release agents may be added to the resin forming the surface of the release film for processing, or may be applied to the surface of the release film for processing.
The water contact angle can also be appropriately adjusted by adjusting the shape, density, size, etc. of the unevenness formed on the surface of the film in the present invention.
　本発明のプロセス用離型フィルムの総厚みには特に制限は無く、プロセス用離型フィルムの用途や使用形態等に応じて適切な厚みを選択すればよいが、例えば１０～３００μｍであることが好ましく、３０～１５０μｍであることがより好ましい。
　離型フィルムの総厚みが上記範囲にあると、巻物として使用する際のハンドリング性が良好であるとともに、離型フィルムの廃棄量が少ないため好ましい。
　本発明のプロセス用離型フィルムの厚みは、フィルムの製造条件を調整することで適宜調整することが可能であり、例えば押出成形によりフィルムを製造する場合には、その際のリップの間隔を調整することで適宜調整することができ、またフィルムを延伸する場合には、延伸倍率を適宜設定することで調整することができる。 The total thickness of the process release film of the present invention is not particularly limited, and an appropriate thickness may be selected according to the application and usage of the process release film. It is preferably 30 to 150 μm, more preferably 30 to 150 μm.
When the total thickness of the release film is in the above range, it is preferable because the handling property when used as a roll is good and the amount of waste of the release film is small.
The thickness of the process release film of the present invention can be appropriately adjusted by adjusting the film production conditions. For example, when the film is produced by extrusion molding, the lip interval at that time is adjusted. When the film is stretched, it can be adjusted by appropriately setting the stretch ratio.
　成形時の皺の抑制等の観点から、本発明のプロセス用離型フィルムは、その引張弾性率が特定の値を示すものであることが好ましい。
　すなわち、本発明のプロセス用離型フィルムは、その１２０℃での引張弾性率が３０ＭＰａから５００ＭＰａであることが好ましく、又はその１７０℃での引張弾性率が２０ＭＰａから４００ＭＰａであることが好ましい。さらに、本発明のプロセス用離型フィルムは、１２０℃での引張弾性率が３０ＭＰａから５００ＭＰａであって、かつ、１７０℃での引張弾性率が２０ＭＰａから４００ＭＰａであることが好ましい。
　上記積層フィルムの１２０℃での引張弾性率が３０ＭＰａから５００ＭＰａであるか、又は１７０℃での引張弾性率が２０ＭＰａから４００ＭＰａであることにより、例えば樹脂封止工程等に用いた場合における皺の発生を一層有効に抑制することができる。
　プロセス用離型フィルムの特定温度における引張弾性率が上記の特定の値を示すことで皺の発生が抑制されるメカニズムは、必ずしも明らかではないが、プロセス時に加熱された状態で一定値以上の引張弾性率を有することで皺の発生に繋がる変形が抑制されるとともに、一定値以下の引張弾性率を有することで、歪が分散されることと何らかの関連があるものと推測される。
　なお、金型追随性等の観点からも、１２０℃での引張弾性率は３００ＭＰａ以下であることが好ましく、１７０℃での引張弾性率は２００ＭＰａ以下であることがより好ましい。 From the viewpoint of suppressing wrinkles during molding, etc., the process release film of the present invention preferably exhibits a specific tensile modulus.
That is, the process release film of the present invention preferably has a tensile elastic modulus at 120°C of 30 MPa to 500 MPa, or preferably has a tensile elastic modulus at 170°C of 20 MPa to 400 MPa. Further, the process release film of the present invention preferably has a tensile modulus at 120°C of 30 MPa to 500 MPa and a tensile modulus at 170°C of 20 MPa to 400 MPa.
When the laminated film has a tensile modulus of elasticity of 30 MPa to 500 MPa at 120° C. or a modulus of elasticity in tension of 20 MPa to 400 MPa at 170° C., for example, wrinkles occur when used in a resin sealing process or the like. can be suppressed more effectively.
The mechanism by which the occurrence of wrinkles is suppressed by exhibiting the above-mentioned specific value for the tensile modulus of elasticity of the process release film at a specific temperature is not necessarily clear. It is presumed that having an elastic modulus suppresses deformation leading to the generation of wrinkles, and that having a tensile elastic modulus of a certain value or less disperses strain.
From the standpoint of mold followability, the tensile modulus at 120°C is preferably 300 MPa or less, and more preferably 200 MPa or less at 170°C.
　本実施形態のプロセス用離型フィルムは、その１２０℃での引張弾性率が
３０ＭＰａから５００ＭＰａであることが好ましく、
４０ＭＰａから４５０ＭＰａであることがより好ましく、
５０ＭＰａから４００ＭＰａであることがより好ましく、
２００ＭＰａから３５０ＭＰａであることがさらに好ましく、
２５０ＭＰａから３００ＭＰａであることが特に好ましい。
　本実施形態のプロセス用離型フィルムは、その１７０℃での引張弾性率が
２０ＭＰａから４００ＭＰａであることが好ましく、
２５ＭＰａから３００ＭＰａであることがより好ましく、
３０ＭＰａから２５０ＭＰａであることがより好ましく
１００ＭＰａから２００ＭＰａであることがさらに好ましく、
１２０ＭＰａから１６０ＭＰａであることが特に好ましい。
　本発明のプロセス用離型フィルムを構成する積層フィルムは、その１２０℃での引張弾性率、及び１７０℃での引張弾性率が共に上記の好ましい範囲内であることが加工の際の自由度および用途が広がるため特に好ましい。 The process release film of the present embodiment preferably has a tensile modulus at 120° C. of 30 MPa to 500 MPa,
more preferably 40 MPa to 450 MPa,
more preferably from 50 MPa to 400 MPa,
It is more preferably 200 MPa to 350 MPa,
250 MPa to 300 MPa is particularly preferred.
The process release film of the present embodiment preferably has a tensile modulus at 170° C. of 20 MPa to 400 MPa,
more preferably from 25 MPa to 300 MPa,
It is more preferably 30 MPa to 250 MPa, further preferably 100 MPa to 200 MPa,
120 MPa to 160 MPa is particularly preferred.
In the laminated film constituting the process release film of the present invention, both the tensile elastic modulus at 120°C and the tensile elastic modulus at 170°C are within the above preferred ranges. It is particularly preferred because of its wide range of applications.
　本実施形態のプロセス用離型フィルムの引張弾性率は、ＪＩＳ　Ｋ７１２７に準拠して、引張試験機を用いて、１２０℃、又は１７０℃で測定することができ、より具体的には本願実施例に記載の方法により測定することができる。
　プロセス用離型フィルムの引張弾性率を調整する方法には特に制限は無く、従来より当業界において採用されている手法により適宜調整すればよいが、例えばフィルムを構成する高分子等の材料を適宜選択することで調整することができる。より具体的には、例えばポリエチレンテレフタレート（ＰＥＴ）、ポリブチレンテレフタレート（ＰＢＴ）、ポリアミド－６、ポリアミド－６６、ポリプロピレン、エチレン－テトラフルオロエチレン共重合体、シンジオタクチックポリスチレン、４－メチルペンテン－１（共）重合体等の比較的耐熱性に優れた高分子材料を適宜使用することで、上記の引張弾性率を実現することが容易になる。
　また、フィルムを延伸（一軸延伸又は二軸延伸）することによって、プロセス用離型フィルムの引張弾性率は一般に向上するので、これを利用して引張弾性率を適宜調整することもできる。 The tensile modulus of the process release film of the present embodiment can be measured at 120° C. or 170° C. using a tensile tester in accordance with JIS K7127. It can be measured by the method described in .
There is no particular limitation on the method for adjusting the tensile modulus of the process release film, and it may be adjusted as appropriate by a method conventionally employed in the industry. It can be adjusted by selection. More specifically, for example, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyamide-6, polyamide-66, polypropylene, ethylene-tetrafluoroethylene copolymer, syndiotactic polystyrene, 4-methylpentene-1 By appropriately using a polymeric material such as a (co)polymer having relatively excellent heat resistance, it becomes easy to achieve the above tensile elastic modulus.
In addition, stretching (uniaxial stretching or biaxial stretching) of the film generally improves the tensile modulus of the process release film, and this can be used to appropriately adjust the tensile modulus.
　本発明のプロセス用離型フィルムは、単層フィルムであっても２層以上の積層フィルムであってもよい。
　構成や製造が簡便であることやコスト等の観点からは、単層のフィルムであることが好ましい。
　一方で、表面の性状や離型性等のフィルム表面が有すべき特性又は有することが好ましい特性と、引張弾性等のフィルム全体が有することが好ましい特性とを同時に、かつ効率的に、達成する観点からは、２層以上の積層フィルムであることが好ましい。
　特に、成形品や金型に対する離型性を有する離型層Ａ、及び該離型層を支持する耐熱樹脂層Ｂ、を含む積層フィルムであることがとりわけ好ましい。
　また、両方の表面が離型性を有することが望まれる場合には、更に離型層Ａ’を含み、離型層Ａ／耐熱樹脂層Ｂ／離型層Ａ’の層構成を有することが好ましい。 The process release film of the present invention may be a single layer film or a laminated film of two or more layers.
A single-layer film is preferable from the viewpoints of simplicity of construction and production, cost, and the like.
On the other hand, it simultaneously and efficiently achieves properties that the film surface should have or preferably has, such as surface properties and releasability, and properties that the entire film, such as tensile elasticity, preferably has. From the viewpoint, it is preferably a laminated film having two or more layers.
In particular, it is particularly preferable to be a laminated film including a release layer A having releasability from a molded product or a mold, and a heat-resistant resin layer B supporting the release layer.
Further, when it is desired that both surfaces have releasability, it may further include a release layer A′ and have a layer structure of release layer A/heat-resistant resin layer B/release layer A′. preferable.
　離型層Ａ
　本実施形態のプロセス用離型フィルムを構成する離型層Ａは、金型を用いた成形プロセスに使用する場合には、金型表面に接する層であり、脱気性、金型との剥離性を円滑にする観点からＳｄｒ（展開界面面積率）が４．０～５０．０％である凹凸が形成されている。凹凸の詳細及びその好ましい形態は上記にて説明したとおりである。
　離型層Ａの水接触角には特に制限は無いが、金型との剥離性をより向上させる観点から水に対する接触角が好ましくは９０°から１３０°、より好ましくは９５°から１２０°であり、特に好ましくは９８°から１１５°、更に好ましくは１００°から１１０°である。成形品の離型性に優れること、入手の容易さなどから、フッ素樹脂、４－メチル－１－ペンテン（共）重合体、及びポリスチレン系樹脂からなる群より選ばれる樹脂を含むことが好ましい。 Release layer A
The release layer A constituting the process release film of the present embodiment is a layer in contact with the mold surface when used in a molding process using a mold, and has degassing properties and peelability from the mold. From the viewpoint of smoothing the surface roughness, unevenness having an Sdr (expansion interface area ratio) of 4.0 to 50.0% is formed. The details of the unevenness and its preferred form are as described above.
The water contact angle of the release layer A is not particularly limited, but the contact angle with water is preferably 90° to 130°, more preferably 95° to 120°, from the viewpoint of further improving the releasability from the mold. , particularly preferably 98° to 115°, more preferably 100° to 110°. It is preferable to include a resin selected from the group consisting of fluororesins, 4-methyl-1-pentene (co)polymers, and polystyrene-based resins in view of the excellent releasability of molded articles and the ease of availability.
　離型層Ａに用いることができるフッ素樹脂は、テトラフルオロエチレンに由来する構成単位を含む樹脂であってもよい。テトラフルオロエチレンの単独重合体であってもよいが、他のオレフィンとの共重合体であってもよい。他のオレフィンの例には、エチレンが含まれる。モノマー構成単位としてテトラフルオロエチレンとエチレンとを含む共重合体は好ましい一例であり、この様な共重合体においては、テトラフルオロエチレンに由来する構成単位の割合が５５～１００質量％であり、エチレンに由来する構成単位の割合が０～４５質量％であることが好ましい。 The fluororesin that can be used for the release layer A may be a resin containing structural units derived from tetrafluoroethylene. It may be a homopolymer of tetrafluoroethylene, or a copolymer with other olefins. Examples of other olefins include ethylene. A preferred example is a copolymer containing tetrafluoroethylene and ethylene as monomer structural units. The proportion of structural units derived from is preferably 0 to 45% by mass.
　離型層Ａに用いることができる４－メチル－１－ペンテン（共）重合体は、４－メチル－１－ペンテンの単独重合体であってもよく、また４－メチル－１－ペンテンと、それ以外の炭素原子数２～２０のオレフィン（以下「炭素原子数２～２０のオレフィン」という）との共重合体であってもよい。 The 4-methyl-1-pentene (co)polymer that can be used in the release layer A may be a homopolymer of 4-methyl-1-pentene, and 4-methyl-1-pentene and Copolymers with other olefins having 2 to 20 carbon atoms (hereinafter referred to as "olefins having 2 to 20 carbon atoms") may also be used.
　４－メチル－１－ペンテンと、炭素原子数２～２０のオレフィンとの共重合体の場合、４－メチル－１－ペンテンと共重合される炭素原子数２～２０のオレフィンは、４－メチル－１－ペンテンに可とう性を付与し得る。炭素原子数２～２０のオレフィンの例には、エチレン、プロピレン、１－ブテン、１－ヘキセン、１－ヘプテン、１－オクテン、１－デセン、１－テトラデセン、１－ヘキサデセン、１－ヘプタデセン、１－オクタデセン、１－エイコセン等が含まれる。これらのオレフィンは、１種のみを用いてもよいし、２種以上を組み合せて用いてもよい。 In the case of a copolymer of 4-methyl-1-pentene and an olefin having 2 to 20 carbon atoms, the olefin having 2 to 20 carbon atoms to be copolymerized with 4-methyl-1-pentene is 4-methyl -1-Pentene can impart flexibility. Examples of C2-C20 olefins include ethylene, propylene, 1-butene, 1-hexene, 1-heptene, 1-octene, 1-decene, 1-tetradecene, 1-hexadecene, 1-heptadecene, 1 -octadecene, 1-eicosene, and the like. These olefins may be used alone or in combination of two or more.
　４－メチル－１－ペンテンと、炭素原子数２～２０のオレフィンとの共重合体の場合、４－メチル－１－ペンテンに由来する構成単位の割合が９６～９９質量％であり、それ以外の炭素原子数２～２０のオレフィンに由来する構成単位の割合が１～４質量％であることが好ましい。炭素原子数２～２０のオレフィン由来の構成単位の含有量が少なくすることで、共重合体を硬く、すなわち貯蔵弾性率Ｅ’が高くすることができ、封止工程等における皺の発生の抑制に有利である。一方、炭素原子数２～２０のオレフィン由来の構成単位の含有量が多くすることで、共重合体を軟らかく、すなわち貯蔵弾性率Ｅ’を低くすることができ、金型追従性を向上させるのに有利である。 In the case of a copolymer of 4-methyl-1-pentene and an olefin having 2 to 20 carbon atoms, the ratio of structural units derived from 4-methyl-1-pentene is 96 to 99% by mass, and other The ratio of structural units derived from olefins having 2 to 20 carbon atoms is preferably 1 to 4% by mass. By reducing the content of structural units derived from olefins having 2 to 20 carbon atoms, the copolymer can be hardened, that is, the storage elastic modulus E' can be increased, and the occurrence of wrinkles in the sealing process etc. can be suppressed. It is advantageous to On the other hand, by increasing the content of structural units derived from olefins having 2 to 20 carbon atoms, the copolymer can be softened, that is, the storage elastic modulus E' can be lowered, and mold followability can be improved. It is advantageous to
　４－メチル－１－ペンテン（共）重合体は、当業者において公知の方法で製造されうる。例えば、チーグラ・ナッタ触媒、メタロセン系触媒等の公知の触媒を用いた方法により製造されうる。４－メチル－１－ペンテン（共）重合体は、結晶性の高い（共）重合体であることが好ましい。結晶性の共重合体としては、アイソタクチック構造を有する共重合体、シンジオタクチック構造を有する共重合体のいずれであってもよいが、特にアイソタクチック構造を有する共重合体であることが物性の点からも好ましく、また入手も容易である。さらに、４－メチル－１－ペンテン（共）重合体は、フィルム状に成形でき、金型成形時の温度や圧力等に耐える強度を有していれば、立体規則性や分子量も、特に制限されない。４－メチル－１－ペンテン共重合体は、例えば、三井化学株式会社製ＴＰＸ（登録商標）等、市販の共重合体であってもよい。 The 4-methyl-1-pentene (co)polymer can be produced by a method known to those skilled in the art. For example, it can be produced by a method using known catalysts such as Ziegler-Natta catalysts and metallocene catalysts. The 4-methyl-1-pentene (co)polymer is preferably a highly crystalline (co)polymer. The crystalline copolymer may be either a copolymer having an isotactic structure or a copolymer having a syndiotactic structure. In particular, it should be a copolymer having an isotactic structure. is preferable from the viewpoint of physical properties and is easily available. Furthermore, the 4-methyl-1-pentene (co)polymer can be molded into a film, and if it has strength to withstand the temperature and pressure during mold molding, the stereoregularity and molecular weight are also limited. not. The 4-methyl-1-pentene copolymer may be a commercially available copolymer such as TPX (registered trademark) manufactured by Mitsui Chemicals, Inc.
　離型層Ａに用いることができるポリスチレン系樹脂には、スチレンの単独重合体及び共重合体が包含され、その重合体中に含まれるスチレン由来の構造単位は少なくとも６０重量％以上であることが好ましく、より好ましくは８０重量％以上である。
　ポリスチレン系樹脂は、アイソタクチックポリスチレンであってもシンジオタクチックポリスチレンであってもよいが、透明性、入手の容易さなどの観点からはアイソタクチックポリスチレンが好ましく、離型性、耐熱性などの観点からは、シンジオタクチックポリスチレンが好ましい。ポリスチレンは、１種を単独で用いてもよく、２種以上を併用してもよい。 Polystyrene-based resins that can be used for the release layer A include styrene homopolymers and copolymers, and the styrene-derived structural units contained in the polymer are at least 60% by weight or more. It is preferably 80% by weight or more, more preferably 80% by weight or more.
The polystyrene-based resin may be either isotactic polystyrene or syndiotactic polystyrene, but isotactic polystyrene is preferable from the viewpoint of transparency, availability, etc., and mold releasability, heat resistance, etc. From the viewpoint of, syndiotactic polystyrene is preferable. One type of polystyrene may be used alone, or two or more types may be used in combination.
　離型層Ａは、成形時の金型の温度（典型的には１２０～１８０℃）に耐え得る耐熱性を有することが好ましい。かかる観点から、離型層Ａとしては、結晶成分を有する結晶性樹脂を含むことが好ましく、当該結晶性樹脂の融点は１９０℃以上であることが好ましく、２００℃以上３００℃以下がより好ましい。
　離型層Ａに結晶性をもたらすため、例えばフッ素樹脂においてはテトラフルオロエチレンから導かれる構成単位を少なくとも含むことが好ましく、４－メチル－１－ペンテン（共）重合体においては４－メチル－１－ペンテンから導かれる構成単位を少なくとも含むことが好ましく、ポリスチレン系樹脂においてはシンジオタクチックポリスチレンを少なくとも含むことが好ましい。離型層Ａを構成する樹脂に結晶成分が含まれることにより、樹脂封止工程等において皺が発生し難く、皺が成形品に転写されて外観不良を生じることを抑制するのに好適である。 The release layer A preferably has heat resistance that can withstand the temperature of the mold during molding (typically 120 to 180°C). From this point of view, the release layer A preferably contains a crystalline resin having a crystalline component, and the melting point of the crystalline resin is preferably 190° C. or higher, more preferably 200° C. or higher and 300° C. or lower.
In order to bring crystallinity to the release layer A, for example, the fluorine resin preferably contains at least a structural unit derived from tetrafluoroethylene, and the 4-methyl-1-pentene (co)polymer contains 4-methyl-1 It preferably contains at least structural units derived from -pentene, and preferably contains at least syndiotactic polystyrene in polystyrene resins. Since the resin constituting the release layer A contains a crystalline component, wrinkles are less likely to occur in the resin sealing process, etc., and are suitable for suppressing the appearance defects caused by the transfer of wrinkles to the molded product. .
　離型層Ａを構成する上記結晶性成分を含む樹脂は、ＪＩＳＫ７２２１に準じて示差走査熱量測定（ＤＳＣ）によって測定した第１回昇温工程での結晶融解熱量が１５Ｊ／ｇ以上、６０Ｊ／ｇ以下であることが好ましく、２０Ｊ／ｇ以上、５０Ｊ／ｇ以下であることがより好ましい。１５Ｊ／ｇ以上であると、樹脂封止工程等での熱プレス成形に耐え得る耐熱性及び離型性をより効果的に発現することが可能であることに加え、寸法変化率も抑制することができるため、皺の発生も防止することができる。一方、前記結晶融解熱量が６０Ｊ／ｇ以下であると、離型層Ａが適切な硬度となるため、樹脂封止工程等においてフィルムの金型への十分な追随性を得ることができるため、フィルムの破損が有効に抑制される。 The resin containing the crystalline component that constitutes the release layer A has a crystal melting heat quantity of 15 J/g or more and 60 J/g or less in the first heating step measured by differential scanning calorimetry (DSC) according to JISK7221. and more preferably 20 J/g or more and 50 J/g or less. When it is 15 J/g or more, it is possible to more effectively exhibit heat resistance and releasability that can withstand hot press molding in a resin sealing process, etc., and also to suppress the dimensional change rate. Therefore, the occurrence of wrinkles can also be prevented. On the other hand, when the heat of crystal fusion is 60 J/g or less, the release layer A has an appropriate hardness, and sufficient followability of the film to the mold can be obtained in the resin sealing process or the like. Film breakage is effectively suppressed.
　離型層Ａは、フッ素樹脂、４－メチル－１－ペンテン共重合体、及び／又はポリスチレン系樹脂の他に、さらに他の樹脂を含んでもよい。この場合、他の樹脂の硬度が比較的高いことが好ましい。他の樹脂の例には、ポリアミド－６、ポリアミド－６６、ポリブチレンテレフタレート、ポリエチレンテレフタレートが含まれる。離型層Ａが、例えば柔らかい樹脂を多く含む場合（例えば、４－メチル－１－ペンテン共重合体において炭素原子数２～２０のオレフィンを多く含む場合）でも、このように、硬度の比較的高い樹脂をさらに含むことで、離型層Ａを硬くすることができ、封止工程等における皺の発生の抑制に有利である。 The release layer A may contain other resins in addition to the fluororesin, 4-methyl-1-pentene copolymer, and/or polystyrene resin. In this case, it is preferable that the hardness of the other resin is relatively high. Examples of other resins include polyamide-6, polyamide-66, polybutylene terephthalate, polyethylene terephthalate. Even when the release layer A contains, for example, a large amount of a soft resin (for example, a large amount of an olefin having 2 to 20 carbon atoms in a 4-methyl-1-pentene copolymer), the hardness is relatively low. By further including a high-grade resin, the release layer A can be hardened, which is advantageous in suppressing the occurrence of wrinkles in the encapsulation process or the like.
　これらの他の樹脂の含有量は、離型層Ａを構成する樹脂成分に対して例えば３～３０質量％であることが好ましい。他の樹脂の含有量を３質量以上とすることで、添加による効果を実質的なものとすることができ、３０質量％以下とすることで、金型や成形品に対する離型性を維持することができる。 The content of these other resins is preferably, for example, 3 to 30% by mass based on the resin component constituting the release layer A. By setting the content of the other resin to 3% by mass or more, the effect of addition can be made substantial. be able to.
　また離型層Ａは、フッ素樹脂、４－メチル－１－ペンテン（共）重合体、及び／又はポリスチレン系樹脂に加えて、本実施形態の目的を損なわない範囲で、耐熱安定剤、耐候安定剤、発錆防止剤、耐銅害安定剤、帯電防止剤等、フィルム用樹脂に一般的に配合される公知の添加剤を含んでもよい。これらの添加剤の含有量は、フッ素樹脂、４－メチル－１－ペンテン共重合体、及び／又はポリスチレン系樹脂１００重量部に対して、例えば０．０００１～１０質量部とすることができる。 In addition to the fluororesin, 4-methyl-1-pentene (co)polymer, and/or polystyrene-based resin, the release layer A contains a heat stabilizer and a weather-resistant stabilizer within a range that does not impair the purpose of the present embodiment. Known additives generally blended in film resins, such as agents, rust inhibitors, anti-copper damage stabilizers, and antistatic agents, may also be included. The content of these additives can be, for example, 0.0001 to 10 parts by weight with respect to 100 parts by weight of the fluororesin, 4-methyl-1-pentene copolymer, and/or polystyrene resin.
　離型層Ａの厚みは、成形品に対する離型性が十分であれば、特に制限はないが、通常１～５０μｍであり、好ましくは５～３０μｍである。 The thickness of the release layer A is not particularly limited as long as it has sufficient releasability from the molded product, but it is usually 1 to 50 μm, preferably 5 to 30 μm.
　離型層Ａ’
　上述の様に、本実施形態のプロセス用離型フィルムは、離型層Ａ及び耐熱樹脂層Ｂに加えて、更に離型層Ａ’を有していてもよい。すなわち、本実施形態のプロセス用離型フィルムは、離型層Ａと、耐熱樹脂層Ｂと、離型層Ａ’とをこの順で含む積層フィルムであるプロセス用離型フィルムであってもよい。この場合、被成形品との良好な剥離性を維持する観点から離型層Ａ’の水に対する接触角は好ましくは９０°から１３０°、より好ましくは９５°から１２０°であり、特に好ましくは９８°から１１５°、更に好ましくは１００°から１１０°である。
　離型層Ａ’の好ましい材質等の詳細は、上記において離型層Ａについて説明したものと同様である。
　離型層Ａ’の表面にはＳｄｒ（展開界面面積率）が４．０～５０．０％である凹凸が形成されていてもいなくてもよく、封止樹脂等の樹脂表面の平滑性が求められる場合等には、凹凸が形成されていないことが好ましい。
　一方、両方の面に優れた脱気性が求められる場合等には、凹凸が形成されていてもよい。 Release layer A'
As described above, the process release film of the present embodiment may have a release layer A′ in addition to the release layer A and the heat-resistant resin layer B. That is, the process release film of the present embodiment may be a process release film that is a laminated film including a release layer A, a heat-resistant resin layer B, and a release layer A′ in this order. . In this case, the contact angle of the release layer A′ to water is preferably 90° to 130°, more preferably 95° to 120°, and particularly preferably 98° to 115°, more preferably 100° to 110°.
Details such as preferable materials of the release layer A′ are the same as those described above for the release layer A.
The surface of the release layer A′ may or may not have irregularities having an Sdr (development interface area ratio) of 4.0 to 50.0%. When required, it is preferable that the unevenness is not formed.
On the other hand, when both surfaces are required to have excellent degassing properties, unevenness may be formed.
　本実施形態のプロセス用離型フィルムが、離型層Ａと、耐熱樹脂層Ｂと、離型層Ａ’とをこの順で含む積層フィルムである場合の離型層Ａと離型層Ａ’とは同一の構成の層であってもよいし、異なる構成の層であってもよい。
　反りの防止や、いずれの面も同様の離型性を有することによる取り扱いの容易さ等の観点からは、離型層Ａと離型層Ａ’とは同一または略同一の構成であることが好ましく、離型層Ａと離型層Ａ’とを使用するプロセスとの関係でそれぞれ最適に設計する観点、例えば、離型層Ａを金型からの離型性に優れたものとし、離型層Ａ’を成形物からの剥離性に優れたものとする等の観点からは、離型層Ａと離型層Ａ’とを異なる構成のものとすることが好ましい。
　離型層Ａと離型層Ａ’とを異なる構成のものとする場合には、離型層Ａと離型層Ａ’とを同一の材料であって厚み等の構成が異なるものとしてもよいし、材料もそれ以外の構成も異なるものとしてもよい。 When the process release film of the present embodiment is a laminated film containing the release layer A, the heat-resistant resin layer B, and the release layer A' in this order, the release layer A and the release layer A' may be layers of the same configuration, or may be layers of different configurations.
From the viewpoint of prevention of warping and ease of handling by having the same releasability on both sides, it is preferable that the release layer A and the release layer A' have the same or substantially the same configuration. Preferably, the release layer A and the release layer A' are optimally designed in relation to the process using them. From the viewpoint of making the layer A' excellent in releasability from the molding, it is preferable that the release layer A and the release layer A' have different structures.
When the release layer A and the release layer A' have different structures, the release layer A and the release layer A' may be made of the same material and have different structures such as thickness. However, the materials and other configurations may be different.
　耐熱樹脂層Ｂ
　本実施形態のプロセス用離型フィルムを構成する耐熱樹脂層Ｂは、離型層Ａ（及び場合により離型層Ａ’）を支持し、かつ金型温度等による皺発生を抑制する機能を有する。
　耐熱樹脂層Ｂには、無延伸フィルムも含め任意の樹脂層を用いることができるが、延伸フィルムを含んでなることが特に好ましい。 Heat-resistant resin layer B
The heat-resistant resin layer B that constitutes the process release film of the present embodiment supports the release layer A (and the release layer A′ in some cases) and has the function of suppressing the occurrence of wrinkles due to mold temperature and the like. .
Any resin layer including a non-stretched film can be used for the heat-resistant resin layer B, but it is particularly preferable to include a stretched film.
　上記延伸フィルムは、一軸延伸フィルムであってもよく、二軸延伸フィルムであってもよい。一軸延伸フィルムである場合には、縦延伸、横延伸のいずれであっても良いが、少なくとも横（ＴＤ）方向に延伸が行われたものであることが望ましい。
　上記延伸フィルムを得るための方法、装置にも特に限定は無く、当業界において公知の方法で延伸を行えばよい。例えば、加熱ロールやテンター式延伸機で延伸することができる。 The stretched film may be a uniaxially stretched film or a biaxially stretched film. In the case of a uniaxially stretched film, it may be longitudinally stretched or transversely stretched, but it is desirable that the film is stretched at least in the transverse (TD) direction.
The method and apparatus for obtaining the stretched film are not particularly limited, and stretching may be performed by a method known in the art. For example, it can be stretched with a heating roll or a tenter-type stretching machine.
　上記延伸フィルムとしては、延伸ポリエステルフィルム、延伸ポリアミドフィルム、及び延伸ポリプロピレンフィルムからなる群より選ばれる延伸フィルムを使用することが好ましい。これらの延伸フィルムは、延伸により、横（ＴＤ）方向の熱膨張率を低下させ、又は負とすることが比較的容易であり、機械的物性が本実施形態の用途に適したものであり、また低コストで入手が比較的容易であるため、耐熱樹脂層Ｂにおける延伸フィルムとして特に好適である。 As the stretched film, it is preferable to use a stretched film selected from the group consisting of a stretched polyester film, a stretched polyamide film, and a stretched polypropylene film. These stretched films are relatively easy to reduce or make the coefficient of thermal expansion in the transverse (TD) direction negative by stretching, and have mechanical properties suitable for the application of the present embodiment, Moreover, it is particularly suitable as a stretched film in the heat-resistant resin layer B because it is inexpensive and relatively easily available.
　延伸ポリエステルフィルムとしては、延伸ポリエチレンテレフタレート（ＰＥＴ）フィルム、延伸ポリブチレンテレフタレート（ＰＢＴ）フィルムが好ましく、二軸延伸ポリエチレンテレフタレート（ＰＥＴ）フィルムが特に好ましい。
　延伸ポリアミドフィルムを構成するポリアミドには特に限定は無いが、ポリアミド－６、ポリアミド－６６等を好ましく用いることができる。
　延伸ポリプロピレンフィルムとしては、一軸延伸ポリプロピレンフィルム、二軸延伸ポリプロピレンフィルム等を好ましく用いることができる。
　延伸倍率には特に限定はなく、熱寸法変化率を適切に制御し、好適な機械的性質を実現するために適切な値を適宜設定すれば良いが、例えば延伸ポリエステルフィルムの場合は、縦方向、横方向ともに２．７～８．０倍の範囲であることが好ましく、延伸ポリアミドフィルムの場合は、縦方向、横方向ともに２．７～５．０倍の範囲であることが好ましく、延伸ポリプロピレンフィルムの場合は、二軸延伸ポリプロピレンフィルムの場合は、縦方向、横方向ともに５．０～１０．０倍の範囲であることが好ましく、一軸延伸ポリプロピレンフィルムの場合は、縦方向に１．５～１０．０倍の範囲であることが好ましい。 As the stretched polyester film, a stretched polyethylene terephthalate (PET) film and a stretched polybutylene terephthalate (PBT) film are preferable, and a biaxially stretched polyethylene terephthalate (PET) film is particularly preferable.
Polyamide constituting the stretched polyamide film is not particularly limited, but polyamide-6, polyamide-66 and the like can be preferably used.
As the oriented polypropylene film, a uniaxially oriented polypropylene film, a biaxially oriented polypropylene film, or the like can be preferably used.
There is no particular limitation on the draw ratio, and an appropriate value may be appropriately set in order to appropriately control the thermal dimensional change rate and achieve suitable mechanical properties. , It is preferably in the range of 2.7 to 8.0 times in both the transverse direction, and in the case of a stretched polyamide film, it is preferably in the range of 2.7 to 5.0 times in both the longitudinal direction and the transverse direction. In the case of a polypropylene film, in the case of a biaxially oriented polypropylene film, it is preferably in the range of 5.0 to 10.0 times in both the machine direction and the transverse direction, and in the case of a uniaxially oriented polypropylene film, it is 1.0 times in the machine direction. A range of 5 to 10.0 times is preferable.
　耐熱樹脂層Ｂは、フィルムの強度や、その熱寸法変化率を適切な範囲に制御する観点から、成形時の金型の温度（典型的には１２０～１８０℃）に耐え得る耐熱性を有することが好ましい。かかる観点から、耐熱樹脂層Ｂは、結晶成分を有する結晶性樹脂を含むことが好ましく、当該結晶性樹脂の融点は１２５℃以上であることが好ましく、融点が１５５℃以上３００℃以下であることがより好ましく、１８５℃以上２１０℃以下であることが更に好ましく、１８５℃以上２０５℃以下であることが特に好ましい。 The heat-resistant resin layer B has heat resistance that can withstand the temperature of the mold during molding (typically 120 to 180 ° C.) from the viewpoint of controlling the strength of the film and its thermal dimensional change rate within an appropriate range. is preferred. From this point of view, the heat-resistant resin layer B preferably contains a crystalline resin having a crystalline component, and the melting point of the crystalline resin is preferably 125° C. or higher, and the melting point is 155° C. or higher and 300° C. or lower. is more preferably 185° C. or higher and 210° C. or lower, and particularly preferably 185° C. or higher and 205° C. or lower.
　上述の様に、耐熱樹脂層Ｂは結晶成分を有する結晶性樹脂を含むことが好ましい。耐熱樹脂層Ｂに含有させる結晶性樹脂として、例えばポリエステル樹脂、ポリアミド樹脂、ポリプロピレン樹脂等の結晶性樹脂をその一部または全部に用いることができる。具体的にはポリエステル樹脂においてはポリエチレンテレフタレートまたはポリブチレンテレフタレート、ポリアミド樹脂においてはポリアミド６やポリアミド６６、ポリプロピレン樹脂においてはアイソタクチックポリプロピレンを用いることが好ましい。 As described above, the heat-resistant resin layer B preferably contains a crystalline resin having a crystalline component. As the crystalline resin to be contained in the heat-resistant resin layer B, for example, a crystalline resin such as polyester resin, polyamide resin, or polypropylene resin can be used partially or wholly. Specifically, it is preferable to use polyethylene terephthalate or polybutylene terephthalate for the polyester resin, polyamide 6 or polyamide 66 for the polyamide resin, and isotactic polypropylene for the polypropylene resin.
　耐熱樹脂層Ｂに前記結晶性樹脂の結晶成分を含ませることにより、樹脂封止工程等において皺が発生し難く、皺が成形品に転写されて外観不良を生じることを抑制するのにより有利となる。
　耐熱樹脂層Ｂを構成する樹脂は、ＪＩＳＫ７２２１に準じて示差走査熱量測定（ＤＳＣ）によって測定した第１回昇温工程での結晶融解熱量が２０Ｊ／ｇ以上、１００Ｊ／ｇ以下であることが好ましく、２５Ｊ／ｇ以上、６５Ｊ／ｇ以下であることがより好ましく、２５Ｊ／ｇ以上、５５Ｊ／ｇ以下であることがより好ましく、２８Ｊ／ｇ以上、５０Ｊ／ｇ以下であることがより好ましく、２８Ｊ／ｇ以上、４０Ｊ／ｇ以下であることがより好ましく、２８Ｊ／ｇ以上、３５Ｊ／ｇ以下であることがさらに好ましい。２０Ｊ／ｇ以上であると、樹脂封止工程等での熱プレス成形に耐え得る耐熱性及び離型性を効果的に発現させることができ、また寸法変化率も僅少に抑制することができるため、皺の発生も防止することができる。一方、前記結晶融解熱量が１００Ｊ／ｇ以下であることにより、耐熱樹脂層Ｂに適度な硬度を付与することができるため樹脂封止工程等においてフィルムの十分な金型への追随性が確保することができることに加えフィルムの破損を効果的に抑制できる。なお、本実施形態において、結晶融解熱量とは、ＪＩＳＫ７２２１に準じて示差走査熱量測定（ＤＳＣ）による測定での第１回昇温工程で得られた縦軸の熱量（Ｊ／ｇ）と横軸の温度（℃）との関係を示すチャート図において、１２０℃以上でピークを有するピーク面積の和によって求められる数値をいう。
　耐熱樹脂層Ｂの結晶融解熱量は、フィルム製造時の加熱、冷却の条件や、延伸の条件を適宜設定することで調節することができる。 By including the crystalline component of the crystalline resin in the heat-resistant resin layer B, wrinkles are less likely to occur in the resin sealing process, etc., and are more advantageous in suppressing appearance defects due to transfer of wrinkles to the molded product. Become.
The resin constituting the heat-resistant resin layer B preferably has a crystal melting heat quantity of 20 J/g or more and 100 J/g or less in the first heating step measured by differential scanning calorimetry (DSC) according to JISK7221. It is more preferably 25 J/g or more and 65 J/g or less, more preferably 25 J/g or more and 55 J/g or less, more preferably 28 J/g or more and 50 J/g or less, and 28 J/g or more. It is more preferably 28 J/g or more and 35 J/g or less, more preferably 28 J/g or more and 35 J/g or less. When it is 20 J/g or more, it is possible to effectively exhibit heat resistance and releasability that can withstand hot press molding in a resin encapsulation process or the like, and it is also possible to slightly suppress the dimensional change rate. , the occurrence of wrinkles can also be prevented. On the other hand, when the heat of crystal fusion is 100 J/g or less, the heat-resistant resin layer B can be given an appropriate degree of hardness. In addition to being able to prevent damage to the film, it is possible to effectively suppress damage to the film. In the present embodiment, the heat of crystal fusion is the amount of heat (J/g) on the vertical axis and the amount of heat (J/g) on the horizontal axis obtained in the first heating step in the measurement by differential scanning calorimetry (DSC) according to JISK7221. In a chart showing the relationship with temperature (°C), it refers to a numerical value obtained by summing peak areas having a peak at 120°C or higher.
The amount of heat of crystal fusion of the heat-resistant resin layer B can be adjusted by appropriately setting heating and cooling conditions during film production and stretching conditions.
　耐熱樹脂層Ｂの厚みは、フィルム強度を確保できれば、特に制限はないが、通常１～１００μｍ、好ましくは５～５０μｍである。 The thickness of the heat-resistant resin layer B is not particularly limited as long as the film strength can be secured, but it is usually 1-100 μm, preferably 5-50 μm.
　それ以外の層
　本実施形態のプロセス用離型フィルムは、本発明の目的に反しない限りにおいて、離型層Ａ、耐熱樹脂層Ｂ及び離型層Ａ’以外の層を有していてもよい。例えば、離型層Ａ（又は離型層Ａ’）と耐熱樹脂層Ｂとの間に、必要に応じて接着層を有してもよい。接着層に用いる材料は、離型層Ａと耐熱樹脂層Ｂとを強固に接着でき、樹脂封止工程や離型工程においても剥離しないものであれば、特に制限されない。 Other Layers The process release film of the present embodiment may have layers other than the release layer A, the heat-resistant resin layer B, and the release layer A′ as long as the object of the present invention is not compromised. . For example, an adhesive layer may be provided between the release layer A (or release layer A') and the heat-resistant resin layer B, if necessary. The material used for the adhesive layer is not particularly limited as long as it can firmly bond the release layer A and the heat-resistant resin layer B and does not separate in the resin sealing process and the release process.
　例えば、離型層Ａ（又は離型層Ａ’）が４－メチル－１－ペンテン共重合体を含む場合は、接着層は、不飽和カルボン酸等によりグラフト変性された変性４－メチル－１－ペンテン系共重合体樹脂、４－メチル－１－ペンテン系共重合体とα－オレフィン系共重合体とからなるオレフィン系接着樹脂等であることが好ましい。離型層Ａ（又は離型層Ａ’）がフッ素樹脂を含む場合は、接着層は、ポリエステル系、アクリル系、フッ素ゴム系等の粘着剤であることが好ましい。接着層の厚みは、離型層Ａ（又は離型層Ａ’）と耐熱樹脂層Ｂとの接着性を向上できれば、特に制限はないが、例えば０．５～１０μｍである。 For example, when the release layer A (or the release layer A′) contains a 4-methyl-1-pentene copolymer, the adhesive layer is modified 4-methyl-1 graft-modified with an unsaturated carboxylic acid or the like. -Pentene-based copolymer resin, olefin-based adhesive resin composed of 4-methyl-1-pentene-based copolymer and α-olefin-based copolymer, and the like are preferable. When the release layer A (or release layer A') contains a fluororesin, the adhesive layer is preferably a polyester-based, acrylic-based, or fluoro-rubber-based adhesive. The thickness of the adhesive layer is not particularly limited as long as the adhesion between the release layer A (or release layer A') and the heat-resistant resin layer B can be improved, but is, for example, 0.5 to 10 µm.
　プロセス用離型フィルムの製造方法
　本発明のプロセス用離型フィルムの製造方法には特に制限は無いが、以下の各工程を有する製造方法により製造することが好ましい。
・金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いてブラスト処理を行い、金属製エンボスロールを製造する工程
・フィルムを前記金属製エンボスロールと他のロール（エンボスロールであってもよい）との間を通過させて該フィルム表面に凹凸を形成する工程
　上記各工程を有する製造方法を用いることにより、２面のうち少なくとも一方の面に凹凸が形成されており、該凹凸が形成されている面の少なくとも一方のレーザー顕微鏡で測定したＳｄｒ（展開界面面積率）が４．０～５０．０％である、本発明のプロセス用離型フィルムを高い生産性で製造することができ、またＳｄｒを高い制御性で所望の値とすることができる。更に、上述の所定のＲＰｃ（ピークカウント）等の、好ましい特性を付与することも容易である。
　なお２面ともに、凹凸を形成する場合は、フィルムをエンボスロールと他のロールとの間を２回通過させてもよく、エンボスロールとエンボスロールとの間を１回通過させてもよい。通常は、前者の方法が用いられる。 Method for producing release film for process The method for producing the release film for process of the present invention is not particularly limited, but it is preferably produced by a production method having the following steps.
・A process of blasting the surface of a metal roll using particles with a particle size of 40 to 100 mesh to produce a metal embossing roll. A step of forming unevenness on the surface of the film by passing it through a gap between the above steps. By using the manufacturing method having the above steps, unevenness is formed on at least one of the two surfaces, and the unevenness is formed. The process release film of the present invention, which has an Sdr (developed interface area ratio) of 4.0 to 50.0% as measured by a laser microscope on at least one of the surfaces where the , and Sdr can be set to a desired value with high controllability. Furthermore, it is easy to impart desirable characteristics such as the above-described predetermined RPc (peak count).
In addition, when unevenness is formed on both sides, the film may be passed between the embossing roll and another roll twice, or may be passed between the embossing rolls once. The former method is usually used.
　金属製エンボスロールを製造する工程
　本実施形態のプロセス用離型フィルムの製造方法は、金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いてブラスト処理を行い、金属製エンボスロールを製造する工程、を有する。
　上記金属製エンボスロールを製造する工程は、金属製ロールの表面に粒度４０～１００メッシュの粒子を用いてブラスト処理を行う工程操作を有していればよく、それ以外の工程操作を有していてもよく、それ以外の工程操作を有さずに、金属製ロールの表面に粒度４０～１００メッシュの粒子を用いてブラスト処理を行う工程操作のみで構成されていてもよい。それ以外の工程操作としては、金属製ロールの表面に、粒度４０～１００メッシュの範囲外の粒子を用いてブラスト処理を行う工程操作、ミルロール法やレジスト腐食法などによって、凹凸模様を形成する工程操作等を挙げることができる。 Process for manufacturing metal embossing roll In the method for manufacturing the process release film of the present embodiment, the surface of the metal roll is subjected to blasting treatment using particles having a particle size of 40 to 100 mesh to manufacture the metal embossing roll. a step of
The process of manufacturing the metal embossing roll may have a process operation of blasting the surface of the metal roll using particles with a particle size of 40 to 100 mesh, and has other process operations. Alternatively, the surface of the metal roll may be blasted with particles having a particle size of 40 to 100 mesh without any other process operation. Other process operations include the process of blasting the surface of the metal roll using particles outside the range of particle size 40 to 100 mesh, and the process of forming an uneven pattern by a mill roll method, a resist corrosion method, or the like. operations and the like can be mentioned.
　本実施形態のプロセス用離型フィルムの製造方法においては、金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いてブラスト処理を行うことで、適切な凹凸形状を有する金属製エンボスロールを効率よく製造することが可能であり、続く工程で、フィルムを当該金属製エンボスロールと他のロールとの間を通過させて該フィルム表面に凹凸を形成することで、２面のうち少なくとも一方の面に凹凸が形成されており、該凹凸が形成されている面の少なくとも一方のレーザー顕微鏡で測定したＳｄｒ（展開界面面積率）が４．０～５０．０％である、本発明のプロセス用離型フィルムを高い生産性及び制御性で製造することができる。 In the method for producing a process release film of the present embodiment, the surface of the metal roll is blasted using particles having a particle size of 40 to 100 mesh, thereby forming a metal embossing roll having an appropriate uneven shape. It is possible to manufacture efficiently, and in the subsequent step, the film is passed between the metal embossing roll and another roll to form unevenness on the film surface, so that at least one of the two surfaces For the process of the present invention, wherein unevenness is formed on the surface, and the Sdr (development interface area ratio) of at least one of the surfaces on which the unevenness is formed, measured with a laser microscope, is 4.0 to 50.0%. The release film can be manufactured with high productivity and controllability.
　上記工程に用いる金属製ロールとしては、鉄芯の表面の全面に金属基材を設けたものが好ましく用いられる。金属基材としては、通常エンボスロールに用いられるものであれば特に制限はなく、例えば、亜鉛、銅、真鍮、アルミニウム、鉄、ステンレス、クロム等の金属が挙げられる。中でも、銅が腐食法における凹凸模様の形成安定性が優れるなどの理由から好ましい。
　金属基材の厚さとしては、エンボス版の凹凸模様の最大高低差をカバーできること等を考慮して設定すればよく、半導体封止プロセス用の離型フィルムを製図する場合には、通常、１０００～１５００μｍの厚さとすることが好ましい。
　エンボス模様の種類に特に制限はなく、例えば、梨地、ヘアライン等の種々の形状に形成されていてよい。 As the metal roll used in the above step, one having a metal substrate provided on the entire surface of an iron core is preferably used. The metal substrate is not particularly limited as long as it is commonly used for embossing rolls, and examples thereof include metals such as zinc, copper, brass, aluminum, iron, stainless steel, and chromium. Among them, copper is preferable because of the excellent stability of formation of the uneven pattern in the corrosion method.
The thickness of the metal substrate may be set in consideration of the ability to cover the maximum height difference of the uneven pattern of the embossed plate. A thickness of ˜1500 μm is preferred.
The type of embossed pattern is not particularly limited, and may be formed in various shapes such as satin finish and hairline.
（ブラスト処理）
　本発明の製造方法においては、金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いたブラスト処理を、少なくとも１回行い、金属製エンボスロールを製造する。ブラスト処理を、２回以上行ってもよく、その際には、２回以上のブラスト処理の全てにおいて粒度４０～１００メッシュの粒子を用いてもよく、またそのうち少なくとも１回を除き、粒度４０～１００メッシュ範囲外の粒径の粒子を用いてもよい。また、２回以上のブラスト処理を行う場合には、その全てにおいて同じ粒径の粒子を用いてもよく、異なる粒径の粒子を用いてもよい。 (Blasting)
In the manufacturing method of the present invention, the surface of the metal roll is subjected to blasting treatment using particles having a particle size of 40 to 100 mesh at least once to manufacture the metal embossing roll. The blasting treatment may be performed twice or more, in which case particles with a particle size of 40 to 100 mesh may be used in all of the two or more blasting treatments. Particles with particle sizes outside the 100 mesh range may also be used. When blasting is performed twice or more, particles with the same particle size may be used in all of the blasting treatments, or particles with different particle sizes may be used.
　粒度４０～１００メッシュの粒子を用いてブラスト処理を行うことで、凹凸の表面積を制御して、凹凸を転写させるフィルム表面のＳｄｒを４．０～５０の範囲に収めることが容易となり、また、凹凸の間隔を制御して、凹凸を転写させるフィルム表面のＲｐｃを３０～８７の範囲に収めることが容易となるので、これらの観点から好ましい。
　ブラスト処理に用いる粒子の粒度は、８０～１００メッシュであることが特に好ましい。
　ブラスト処理に用いる粒子の材質にも特に制限は無く、形成しようとする凹凸の深さや形状等の観点から、金属製ロールの材質も勘案のうえ適宜選択すればよいが、ブラスト処理に従来用いられている材料を好ましく用いることができ、例えば、アルミナ、鉄、炭化珪素、酸化クロム、酸化鉄等の無機粒子を好ましく用いることができる。 By performing blasting using particles with a particle size of 40 to 100 mesh, it becomes easy to control the surface area of the unevenness and to keep the Sdr of the film surface to which the unevenness is transferred within the range of 4.0 to 50. From these points of view, it is preferable because it is easy to control the distance between the irregularities and keep the Rpc of the film surface to which the irregularities are transferred within the range of 30 to 87.
The particle size of the particles used for blasting is particularly preferably 80-100 mesh.
The material of the particles used in the blasting treatment is not particularly limited. For example, inorganic particles such as alumina, iron, silicon carbide, chromium oxide, and iron oxide can be preferably used.
　ブラスト処理は、例えば上述のような粒子を、例えば圧縮空気の力によって、ノズルの先端から吹き付けることで行うことができる。圧搾空気の圧力は、具体的には２００～５００ｋＰａの範囲であることが好ましい。２００ｋＰａ以上であると、本発明の効果を十分に奏することができる深さの凹凸を形成することができ、５００ｋＰａ以下であると、凹凸模様を破壊する等して上記効果を却って妨げることを防ぐことができる。以上の観点から、圧縮空気の圧力範囲は、３００～４００ｋＰａの範囲であることがさらに好ましい。
　なお、ブラスト処理は、常温で行うことが好ましく、粒子の吹き付け時間としては、０．０１～０．５秒程度であることが好ましい。また、ノズルから投射される粒子の吹き付け面積に応じて、上記吹き付け時間の条件を満足するように、ノズルを走査してもよい。 Blasting can be performed, for example, by blowing particles such as those described above from the tip of a nozzle, for example, by the force of compressed air. Specifically, the pressure of the compressed air is preferably in the range of 200-500 kPa. If it is 200 kPa or more, it is possible to form unevenness with a depth that can sufficiently exhibit the effects of the present invention, and if it is 500 kPa or less, it is possible to prevent the above effects from being hindered by destroying the uneven pattern. be able to. From the above point of view, it is more preferable that the pressure range of the compressed air is in the range of 300 to 400 kPa.
The blasting treatment is preferably carried out at room temperature, and the time for which the particles are sprayed is preferably about 0.01 to 0.5 seconds. Further, the nozzle may be scanned so as to satisfy the spraying time condition according to the spraying area of the particles projected from the nozzle.
　本実施形態においては、保護層としての機能を付与する等の観点から、クロム層を積層することが好ましい。クロム層は、ブラスト処理の前に行ってもよいし、後に行ってもよい。また、ブラスト処理の前後の両方において、クロム層の積層処理を行ってもよい。 In the present embodiment, it is preferable to laminate a chromium layer from the viewpoint of imparting a function as a protective layer. The chromium layer may be applied before or after blasting. Also, the chromium layer may be laminated both before and after the blasting treatment.
　クロム層の積層に用いるクロムの種類としては、光沢を有するほどに平滑なものから、完全に艶消しのものまで適用可能なものが種々あるが、ブラスト処理の前後のいずれにクロム層を積層するかに等を考慮して適宜選択すればよい。
　ブラスト処理前にクロム層を積層する場合には、光沢の高いものを用いることが好ましい。光沢の高いほど平滑なクロム層は耐久性が高いために、保護層として優れる。また、エンボス版としての再現性も良好となる。
　また、ブラスト処理の前にクロム層を積層する場合には、ブラスト処理によって、クロム層が損なわれないようにするために、クロム層の厚さを３０μm以上とすることが好ましい。さらに、経済性等を考慮すると３０～５０μｍの範囲がより好ましい。 There are various types of chromium used for lamination of the chromium layer, from chromium smooth enough to have luster to completely matt chromium, and the chromium layer is laminated before or after blasting. It can be selected as appropriate in consideration of crabs and the like.
If the chromium layer is laminated before blasting, it is preferable to use a highly glossy one. A chromium layer that is smoother with higher gloss is more durable and is therefore excellent as a protective layer. Also, the reproducibility as an embossed plate is improved.
Further, when the chromium layer is laminated before the blasting treatment, the thickness of the chromium layer is preferably 30 μm or more so as not to damage the chromium layer by the blasting treatment. Furthermore, in consideration of economic efficiency, etc., the range of 30 to 50 μm is more preferable.
　ブラスト処理後にクロム層を積層させる場合のクロム層の厚さについては、保護層としての機能を付与することができ、艶が制御できる範囲で特に制限はないが、１０～２５μｍの範囲が好ましい。
　クロム層の積層方法については特に制限はなく、例えば、メッキにより簡便に付与することができる。なお、クロム層のモース硬度は７程度（６～８程度）であることが好ましい。 When the chromium layer is laminated after blasting, the thickness of the chromium layer is not particularly limited as long as it can function as a protective layer and the luster can be controlled.
There is no particular limitation on the method of laminating the chromium layer, and the chromium layer can be easily applied by plating, for example. The chromium layer preferably has a Mohs hardness of about 7 (about 6 to 8).
　フィルム表面に凹凸を形成する工程
　本実施形態のプロセス用離型フィルムの製造方法は、上述の金属製エンボスロールを製造する工程に加えて、フィルムを前記金属製エンボスロールと他のロールとの間を通過させて該フィルム表面に凹凸を形成する工程、を有する。
　このフィルム表面に凹凸を形成する工程により、高い効率で、本発明のプロセス用離型フィルムの２面のうち少なくとも一方の面に凹凸を形成し、かつ、該凹凸が形成された面の少なくとも一方のレーザー顕微鏡で測定したＳｄｒ（展開界面面積率）を、４．０～５０．０％とすることができる。 Step of Forming Irregularities on the Film Surface In the manufacturing method of the process release film of the present embodiment, in addition to the above-described step of manufacturing the metal embossing roll, the film is placed between the metal embossing roll and another roll. and forming irregularities on the surface of the film by passing through.
By this step of forming unevenness on the film surface, unevenness is formed on at least one of the two surfaces of the release film for processing of the present invention with high efficiency, and at least one of the surfaces on which the unevenness is formed. Sdr (spread interface area ratio) measured with a laser microscope can be 4.0 to 50.0%.
　本実施形態において、上述の金属製エンボスロールを製造する工程で得られた金属製エンボスロールを用いて、フィルム表面に凹凸を形成する工程の具体的操作や条件には特に制限は無く、従来の当該技術分野におけるエンボス工程と同様の操作や条件を適宜採用することができる。
　例えば、ヒータを内蔵した金属エンボスロールを６０～２００℃に加熱して、単層フィルム又は積層フィルムである凹凸形成前のフィルムを金属エンボスロールと他のロールの間を通過させて、加圧して、凹凸を形成することができる。
その際、フィルムを乾燥炉内で、もしくは、加熱ロールに接触させて予熱しておいてもよい。圧力は３０～１５０ｋｇｆ／ｃｍであることが好ましい。加圧・賦形した後のフィルムは、冷却することが好ましい。
　上記の金属製エンボスロールと他のロールとは、適切な装置、例えば公知の枚葉又は輪転式のエンボス機内に配置されることが好ましい。 In this embodiment, the metal embossing roll obtained in the process of manufacturing the metal embossing roll described above is used to form irregularities on the film surface without any particular restrictions on specific operations and conditions. The same operations and conditions as the embossing process in the technical field can be appropriately adopted.
For example, a metal embossing roll with a built-in heater is heated to 60 to 200° C., and a single-layer film or laminated film before unevenness formation is passed between the metal embossing roll and other rolls and pressurized. , can form unevenness.
At that time, the film may be preheated in a drying oven or in contact with a heating roll. The pressure is preferably 30-150 kgf/cm. It is preferable to cool the film after pressurization and shaping.
The metal embossing roll and other rolls are preferably arranged in a suitable apparatus, such as known sheet-fed or rotary embossing machines.
　本発明のプロセス用離型フィルムが、離型層Ａと耐熱樹脂層Ｂとを有する積層フィルムである場合の、プロセス用離型フィルムの製造方法にも特に制限は無いが、例えば、
　１）フィルム表面に凹凸を形成する工程に先立ち、離型層Ａと耐熱樹脂層Ｂを共押出成形して積層することにより、凹凸形成前のフィルムを製造し、これをフィルム表面に凹凸を形成する工程に供することで、プロセス用離型フィルムを製造することができる。
　２）あるいは、耐熱樹脂層Ｂとなるフィルム上に、離型層Ａや接着層となる樹脂の溶融樹脂を塗布・乾燥したり、または離型層Ａや接着層となる樹脂を溶剤に溶解させた樹脂溶液を塗布・乾燥したりして、凹凸形成前のフィルムを製造してもよい。
　３）更に、予め離型層Ａとなるフィルムと、耐熱樹脂層Ｂとなるフィルムとを製造しておき、これらのフィルムを積層（ラミネート）することにより、プロセス用離型フィルムを製造する方法を採用することもできる。この場合には、離型層Ａとなるフィルムの表面に、予め凹凸を形成してもよい。すなわち、離型層Ａとなるフィルムのみを、上記のフィルム表面に凹凸を形成する工程に供してもよい。 When the release film for process use of the present invention is a laminated film having a release layer A and a heat-resistant resin layer B, the method for producing the release film for process use is not particularly limited.
1) Prior to the step of forming unevenness on the film surface, the release layer A and the heat-resistant resin layer B are co-extruded and laminated to produce a film before unevenness is formed, and the unevenness is formed on the film surface. By subjecting it to the step of performing, a release film for a process can be produced.
2) Alternatively, the molten resin of the release layer A and the adhesive layer is applied and dried on the film that will be the heat-resistant resin layer B, or the resin that will be the release layer A and the adhesive layer is dissolved in a solvent. The film may be manufactured by coating and drying the resin solution obtained before the unevenness is formed.
3) Further, a method of manufacturing a release film for a process by preliminarily manufacturing a film to be a release layer A and a film to be a heat-resistant resin layer B and laminating these films. can also be adopted. In this case, the surface of the film to be the release layer A may be pre-formed with unevenness. That is, only the film to be the release layer A may be subjected to the step of forming unevenness on the film surface.
　上記３）の方法において、各樹脂フィルムを積層する方法としては、公知の種々のラミネート方法が採用でき、例えば押出ラミネート法、ドライラミネート法、熱ラミネート法等が挙げられる。
　ドライラミネート法では、接着剤を用いて各樹脂フィルムを積層する。接着剤としては、ドライラミネート用の接着剤として公知のものを使用できる。例えばポリ酢酸ビニル系接着剤；アクリル酸エステル（アクリル酸エチル、アクリル酸ブチル、アクリル酸２－エチルヘキシルエステル等）の単独重合体もしくは共重合体、またはアクリル酸エステルと他の単量体（メタクリル酸メチル、アクリロニトリル、スチレン等）との共重合体等からなるポリアクリル酸エステル系接着剤；シアノアクリレ－ト系接着剤；エチレンと他の単量体（酢酸ビニル、アクリル酸エチル、アクリル酸、メタクリル酸等）との共重合体等からなるエチレン共重合体系接着剤；セルロ－ス系接着剤；ポリエステル系接着剤；ポリアミド系接着剤；ポリイミド系接着剤；尿素樹脂またはメラミン樹脂等からなるアミノ樹脂系接着剤；フェノ－ル樹脂系接着剤；エポキシ系接着剤；ポリオール（ポリエーテルポリオール、ポリエステルポリオール等）とイソシアネートおよび／またはイソシアヌレートと架橋させるポリウレタン系接着剤；反応型（メタ）アクリル系接着剤；クロロプレンゴム、ニトリルゴム、スチレン－ブタジエンゴム等からなるゴム系接着剤；シリコーン系接着剤；アルカリ金属シリケ－ト、低融点ガラス等からなる無機系接着剤；その他等の接着剤を使用できる。３）の方法で積層する樹脂フィルムは、市販のものを用いてもよく、公知の製造方法により製造したものを用いてもよい。樹脂フィルムには、コロナ処理、大気圧プラズマ処理、真空プラズマ処理、プライマー塗工処理等の表面処理が施されてもよい。樹脂フィルムの製造方法としては、特に限定されず、公知の製造方法を利用できる。 In the above method 3), as a method for laminating each resin film, various known lamination methods can be employed, such as an extrusion lamination method, a dry lamination method, a heat lamination method, and the like.
In the dry lamination method, each resin film is laminated using an adhesive. As the adhesive, one known as an adhesive for dry lamination can be used. For example, polyvinyl acetate-based adhesives; homopolymers or copolymers of acrylic esters (ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, etc.), or acrylic esters and other monomers (methacrylic acid cyanoacrylate-based adhesives; ethylene and other monomers (vinyl acetate, ethyl acrylate, acrylic acid, methacrylic acid) Ethylene copolymer adhesives made of copolymers, etc.) Cellulose adhesives Polyester adhesives Polyamide adhesives Polyimide adhesives Amino resins made of urea resin or melamine resin Adhesives; Phenolic resin adhesives; Epoxy adhesives; Polyurethane adhesives crosslinked with polyols (polyether polyols, polyester polyols, etc.) and isocyanates and/or isocyanurates; Reactive (meth)acrylic adhesives rubber adhesives such as chloroprene rubber, nitrile rubber and styrene-butadiene rubber; silicone adhesives; inorganic adhesives such as alkali metal silicates and low-melting glass; and other adhesives. As the resin film to be laminated by the method of 3), a commercially available one may be used, or one produced by a known production method may be used. The resin film may be subjected to surface treatment such as corona treatment, atmospheric pressure plasma treatment, vacuum plasma treatment, and primer coating treatment. The method for producing the resin film is not particularly limited, and known production methods can be used.
　１）共押出し成形法は、離型層Ａとなる樹脂層と耐熱樹脂層Ｂとなる樹脂層との間に、異物が噛み込む等による欠陥や、離型フィルムの反りが生じ難い点で好ましい。３）ラミネート法は、耐熱樹脂層Ｂに延伸フィルムを用いる場合に好適な製造方法である。この場合は、必要に応じてフィルム同士の界面に適切な接着層を形成することが好ましい。フィルム同士の接着性を高める上で、フィルム同士の界面に、必要に応じてコロナ放電処理等の表面処理を施してもよい。 1) The co-extrusion molding method is preferable in that defects such as foreign matter being caught between the resin layer serving as the release layer A and the resin layer serving as the heat-resistant resin layer B and warping of the release film are less likely to occur. . 3) The lamination method is a suitable manufacturing method when a stretched film is used for the heat-resistant resin layer B. In this case, it is preferable to form an appropriate adhesive layer on the interface between the films as necessary. In order to improve the adhesiveness between the films, the interface between the films may be subjected to surface treatment such as corona discharge treatment, if necessary.
　プロセス用離型フィルムは、必要に応じて１軸または２軸延伸されていてもよく、それによりフィルムの膜強度を高めることができる。
　延伸は、フィルム表面に凹凸を形成する工程の前に行ってもよく、後に行ってもよいが、Ｓｄｒ（展開界面面積率）等のフィルム表面の性状を適切に制御する観点からは、フィルム表面に凹凸を形成する工程の前に行うことが好ましい。 The process release film may optionally be uniaxially or biaxially stretched to increase the film strength of the film.
Stretching may be performed before or after the step of forming unevenness on the film surface. It is preferable to carry out before the step of forming unevenness on the surface.
　上記２）塗布法における塗布手段は、特に限定されないが、例えばロールコータ、ダイコータ、スプレーコータ等の各種コータが用いられる。溶融押出手段は、特に限定されないが、例えばＴ型ダイやインフレーション型ダイを有する押出機などが用いられる。 Although the coating means in the above 2) coating method is not particularly limited, for example, various coaters such as a roll coater, a die coater, and a spray coater are used. The melt extrusion means is not particularly limited, but for example, an extruder having a T-type die or an inflation type die is used.
　プロセス用離型フィルムの使用形態（製造プロセス）
　本発明のプロセス用離型フィルムは、金型内に半導体チップ等を配置して樹脂を注入成形する際に、半導体チップ等と金型内面との間に配置して使用することができる。本発明のプロセス用離型フィルムを用いることで、金型からの離型不良、バリの発生等を効果的に防止することができる。
　上記製造プロセスに用いる樹脂は、熱可塑性樹脂、熱硬化性樹脂のいずれであってもよいが、当該技術分野においては熱硬化性樹脂が広く用いられており、特にエポキシ系の熱硬化性樹脂を用いることが好ましい。
　上記製造プロセスとしては、半導体チップの封止が最も代表的であるが、これに限定されるものではなく、本発明は、繊維強化プラスチック成形プロセス、プラスチックレンズ成形プロセス等にも適用することができる。 Form of use of process release film (manufacturing process)
The process release film of the present invention can be used by placing it between the semiconductor chip or the like and the inner surface of the mold when the semiconductor chip or the like is placed in the mold and resin is injected and molded. By using the process release film of the present invention, it is possible to effectively prevent mold release failure, burr generation, and the like.
The resin used in the above manufacturing process may be either a thermoplastic resin or a thermosetting resin, but thermosetting resins are widely used in the technical field, and epoxy-based thermosetting resins are particularly used. It is preferable to use
The most typical example of the manufacturing process is the sealing of semiconductor chips, but the present invention is not limited to this, and can also be applied to fiber-reinforced plastic molding processes, plastic lens molding processes, and the like. .
　図１は、本発明の離型フィルムを用いた樹脂封止半導体の製造方法の一例を示す模式図である。
　図１ａに示すように、本発明の離型フィルム１を、ロール状の巻物からロール１－２およびロール１－３により、成形金型８内に供給する。次いで、離型フィルム１を上型２の内面に配置する。このとき、吸引口３から上型２内面を真空引きして、離型フィルム１を上型２内面に密着させる。本発明のプロセス用離型フィルム１は横方向への脱気性に優れるので、この際の脱気時間が短縮され、樹脂封止半導体を高い生産性で製造することができる。また、上型２内面への密着性にも優れるので、皺の発生が抑制され、良好な外観の樹脂封止半導体を製造することができる。これらの顕著な効果を実現するため、本実施形態においては、凹凸が形成されている面であって、Ｓｄｒ（展開界面面積率）が４．０～５０．０％である面を、上型２内面と対向するように配置する。
　モールディング成形装置の下金型５に、基板上に配置した半導体チップ６が配置されており、その半導体チップ６上に封止樹脂を配するか、又は半導体チップ６を覆うように液状封止樹脂を注入することで、排気吸引され密着された離型フィルム１を配置した上金型２と下金５型との間に封止樹脂４が収容される。次に図１ｂに示すように、上金型２と下金型５とを、本発明の離型フィルム１を介して型閉じし、封止樹脂４を硬化させる。 FIG. 1 is a schematic diagram showing an example of a method for producing a resin-encapsulated semiconductor using the release film of the present invention.
As shown in FIG. 1a, the release film 1 of the present invention is fed into a mold 8 from a roll-shaped roll by rolls 1-2 and 1-3. Next, the release film 1 is arranged on the inner surface of the upper mold 2 . At this time, the inner surface of the upper mold 2 is evacuated from the suction port 3 to bring the release film 1 into close contact with the inner surface of the upper mold 2 . Since the process release film 1 of the present invention is excellent in deaeration in the lateral direction, the deaeration time is shortened, and resin-encapsulated semiconductors can be produced with high productivity. Moreover, since the adhesion to the inner surface of the upper mold 2 is also excellent, the occurrence of wrinkles is suppressed, and a resin-encapsulated semiconductor with a good appearance can be manufactured. In order to realize these remarkable effects, in the present embodiment, the surface on which the unevenness is formed and the surface having an Sdr (development interface area ratio) of 4.0 to 50.0% is used as the upper die. 2 Arrange so as to face the inner surface.
A semiconductor chip 6 arranged on a substrate is arranged in a lower mold 5 of a molding machine, and a sealing resin is arranged on the semiconductor chip 6, or a liquid sealing resin is applied so as to cover the semiconductor chip 6. By injecting the sealing resin 4, the sealing resin 4 is accommodated between the upper mold 2 and the lower mold 5 on which the release film 1 is placed and which is exhausted and sucked. Next, as shown in FIG. 1b, the upper mold 2 and the lower mold 5 are closed via the release film 1 of the present invention, and the sealing resin 4 is cured.
　型閉め硬化により、図１ｃに示すように封止樹脂４が金型内に流動化し、封止樹脂４が空間部に流入し半導体チップ６の側面周囲を囲むようにして充填され、封止された半導体チップ６を上金型２と下金型５とが型開きして取り出す。型開きし、成形品を取り出した後、離型フィルム１を複数回繰り返して利用するか、新たな離型フィルムを供給し、次の、樹脂モールディング成形に付される。 As shown in FIG. 1c, the sealing resin 4 is fluidized in the mold by the mold closing and hardening, and the sealing resin 4 flows into the space and surrounds the side surface of the semiconductor chip 6, thereby filling the sealed semiconductor. The upper mold 2 and the lower mold 5 are opened and the chip 6 is taken out. After the mold is opened and the molded product is taken out, the release film 1 is repeatedly used, or a new release film is supplied, and the next resin molding is performed.
　本発明の離型フィルムを上金型に密着させ、金型と封止樹脂との間に介在させ、樹脂モールドすることにより金型への樹脂の付着を防ぎ、金型の樹脂モールド面を汚さず、かつ成形品を容易に離型させることができる。
　なお、離型フィルムは一回の樹脂モールド操作ごとに新たに供給して樹脂モールドすることもできるし複数回の樹脂モールド操作ごとに新たに供給して樹脂モールドすることもできる。 The release film of the present invention is adhered to the upper mold, interposed between the mold and the sealing resin, and resin-molded to prevent the resin from adhering to the mold and prevent the resin mold surface of the mold from becoming dirty. and the molded article can be easily released from the mold.
It should be noted that the release film can be newly supplied for each resin molding operation and resin-molded, or can be newly supplied for each resin-molding operation to be resin-molded.
　封止樹脂としては、液状樹脂であっても、常温で固体状の樹脂であってもよいが、樹脂封止時液状となるものなどの封止材を適宜採用できる。封止樹脂材料として、具体的には、主としてエポキシ系（ビフェニル型エポキシ樹脂、ビスフェノールエポキシ樹脂、ｏ－クレゾールノボラック型エポキシ樹脂など）が用いられ、エポキシ樹脂以外の封止樹脂として、ポリイミド系樹脂（ビスマレイミド系）、シリコーン系樹脂（熱硬化付加型）など封止樹脂として通常使用されているものを用いることができる。また、樹脂封止条件としては、使用する封止樹脂により異なるが、例えば硬化温度１２０℃～１８０℃、成形圧力１０～５０ｋｇ／ｃｍ２、硬化時間１～６０分の範囲で適宜設定することができる。 The encapsulating resin may be a liquid resin or a resin that is solid at room temperature, but a sealing material that becomes liquid when resin-encapsulated can be used as appropriate. Specifically, epoxy resins (biphenyl type epoxy resins, bisphenol epoxy resins, o-cresol novolac type epoxy resins, etc.) are mainly used as sealing resin materials, and polyimide resins ( Bismaleimide-based resins), silicone-based resins (thermosetting addition type), and the like, which are commonly used as encapsulating resins, can be used. The resin sealing conditions may vary depending on the sealing resin used, but may be appropriately set, for example, within the range of curing temperature of 120° C. to 180° C., molding pressure of 10 to 50 kg/cm 2 , and curing time of 1 to 60 minutes. can.
　離型フィルム１を成形金型８の内面に配置する工程と、半導体チップ６を成形金型８内に配置する工程の前後は、特に限定されず、同時に行ってもよいし、半導体チップ６を配置した後、離型フィルム１を配置してもよいし、離型フィルム１を配置した後、半導体チップ６を配置してもよい。 Before and after the step of arranging the release film 1 on the inner surface of the mold 8 and the step of arranging the semiconductor chip 6 in the mold 8 are not particularly limited. The release film 1 may be placed after placement, or the semiconductor chip 6 may be placed after the release film 1 is placed.
　このように、本発明のプロセス用離型フィルム１は、高い離型性を有するため、半導体パッケージ４－２を容易に離型することができる。また、離型フィルム１は、適度な柔軟性を有するので、金型形状に対する追従性に優れながらも、成形金型８の熱によって皺になり難い。このため、封止された半導体パッケージ４－２の樹脂封止面に皺が転写されたり、樹脂が充填されない部分（樹脂欠け）が生じたりすることなく、外観の良好な封止された半導体パッケージ４－２を得ることができる。
　更に、離型フィルム１は、横方向の脱気性に優れるので、上金型２の内面に密着させる際の脱気時間が短縮され、樹脂封止半導体を高い生産性で製造することができる。 As described above, the process release film 1 of the present invention has high releasability, so that the semiconductor package 4-2 can be easily released from the mold. Moreover, since the release film 1 has an appropriate degree of flexibility, it is difficult to wrinkle due to the heat of the molding die 8 while being excellent in followability to the shape of the die. Therefore, the sealed semiconductor package 4-2 with good appearance is prevented from being transferred wrinkles to the resin-sealed surface of the sealed semiconductor package 4-2 and without causing a portion not filled with resin (resin chipping). You can get 4-2.
Furthermore, since the release film 1 is excellent in degassing property in the horizontal direction, degassing time is shortened when it is brought into close contact with the inner surface of the upper mold 2, and resin-encapsulated semiconductors can be manufactured with high productivity.
　本発明のプロセス用離型フィルムを用いた樹脂封止半導体の製造方法においては、図１で示したような、固体の封止樹脂材料４を加圧加熱する圧縮成型法に限らず、流動状態の封止樹脂材料を注入するトランスファーモールド法を採用してもよい。 The method for manufacturing a resin-encapsulated semiconductor using the process release film of the present invention is not limited to the compression molding method in which the solid encapsulating resin material 4 is pressurized and heated as shown in FIG. A transfer molding method for injecting a sealing resin material may be employed.
　本発明の離型フィルムは、半導体素子を樹脂封止する工程に限らず、成型金型を用いて各種成形品を成形および離型する工程、例えば繊維強化プラスチック成形および離型工程、プラスチックレンズ成形および離型工程等においても好ましく使用できる。 The release film of the present invention is not limited to the process of resin-encapsulating a semiconductor element, but also the process of molding and releasing various molded products using a molding die, such as fiber-reinforced plastic molding and mold release process, plastic lens molding Also, it can be preferably used in the mold release step and the like.
　以下、本発明を実施例によりさらに詳細に説明するが、本発明は、これにより何ら限定されるものではない。 The present invention will be described in more detail below with reference to examples, but the present invention is not limited by these.
　以下の実施例／比較例において、物性／特性の評価は下記の方法で行った。
（展開界面面積率（Ｓｄｒ））
　真空吸着プレートにフィルムを真空吸着させて、プレートごとレーザー顕微鏡の測定ステージに設置した。以下の条件でレーザー顕微鏡像を取得して、凹凸面（離型層Ａ側）のＳｄｒを求めた。
　　装置：レーザー顕微鏡（オリンパス株式会社製、ＯＬＳ５０００）
　　対物レンズ：ＭＰＬＡＰＯＮ５０ＸＬＥＴ
　　測定面積：７２０×７２０μｍ（縦横３×３の計９エリアを画像連結）
　　自動傾き除去：実施
　　フィルター処理：無し In the following examples/comparative examples, physical properties/characteristics were evaluated by the following methods.
(Development interface area ratio (Sdr))
The film was vacuum-sucked on the vacuum-sucking plate, and the whole plate was placed on the measurement stage of the laser microscope. A laser microscope image was obtained under the following conditions to determine the Sdr of the uneven surface (release layer A side).
Apparatus: laser microscope (OLS5000, manufactured by Olympus Corporation)
Objective lens: MPLAPON50XLET
Measurement area: 720 x 720 μm (image connection of a total of 9 areas of 3 x 3 in length and width)
Automatic deskewing: Enabled Filtering: None
（ピークカウント（ＲＰｃ））
　ＪＩＳ　Ｂ０６０１：２０１３（ＩＳＯ４２８７：１９９７，Ａｍｄ．１：２００９）に基づき凹凸面（離型層Ａ側）のピークカウントを測定した。基準長さは１０ｍｍとした。測定に際しては、表面粗さ測定機ＳＵＲＦＣＯＭ　１３０Ａ（株式会社東京精密製）を用い、フィルムの製造時の流れ方向に対して直交する方向（ＴＤ方向）について３か所、および平行な方向（ＭＤ方向）について３か所の計６か所についてＲＰｃを求め、それらの平均値を当該表面のＲＰｃとした。 (Peak count (RPc))
The peak count of the uneven surface (release layer A side) was measured based on JIS B0601:2013 (ISO4287:1997, Amd.1:2009). The reference length was set to 10 mm. In the measurement, a surface roughness measuring machine SURFCOM 130A (manufactured by Tokyo Seimitsu Co., Ltd.) was used, and three points were measured in the direction (TD direction) perpendicular to the flow direction during film production, and in the direction parallel (MD direction ), the RPc was determined for a total of 6 locations (3 locations), and the average value thereof was taken as the RPc of the surface.
　水に対する接触角（水接触角）
　ＪＩＳ　Ｒ３２５７に準拠して、接触角測定器（Ｋｙｏｗａ　Ｉｎｔｅｒ　ｆａｃｅ　Ｓｃｉｅｎｃｅ社製、ＦＡＣＥＣＡ－Ｗ）を用いてフィルム表面（両面）の水接触角を測定した。 Contact angle with water (water contact angle)
According to JIS R3257, the water contact angle of the film surface (both sides) was measured using a contact angle measuring instrument (Kyowa Interface Science, FACECA-W).
（引張弾性率）
　ＪＩＳ　Ｋ７１２７に準拠し、株式会社エー・アンド・デイ製恒温槽付引張試験機「ＲＴＣ－１２２５」を用いて１２０℃、１７０℃での引張弾性率を求めた。
　　測定条件：引張モード
　　測定方向：フィルムの縦（ＭＤ）方向（フィルム搬送方向） (tensile modulus)
According to JIS K7127, the tensile modulus at 120° C. and 170° C. was determined using a tensile tester with a constant temperature bath “RTC-1225” manufactured by A&D Co., Ltd.
Measurement conditions: Tensile mode Measurement direction: Film longitudinal (MD) direction (film transport direction)
（脱気時間）
　プロセス用離型フィルムを、図１（ａ）に示されるように、上型と下型との間に１０Ｎの張力を印加した状態で配置（凹凸面（離型層Ａ側）を上型側とした）した後、上型のパーティング面に真空吸着させた。このとき、エアーが完全に抜けきるまでの時間を測定した。
　半導体封止成型装置は、アピックヤマダ株式会社製のＷＣＭ―３００ＭＳを使用した。上型のパーティング面が直径３００ｍｍの円形となっている金型を用いた。金型の温度を１２０℃とした。 (Degassing time)
As shown in FIG. 1( a ), the release film for process is arranged with a tension of 10 N applied between the upper mold and the lower mold (the uneven surface (release layer A side) is on the upper mold side ), and then vacuum-adsorbed to the parting surface of the upper mold. At this time, the time required for the air to completely escape was measured.
WCM-300MS manufactured by Apic Yamada Co., Ltd. was used as a semiconductor encapsulation molding apparatus. A mold having a circular parting surface of the upper mold with a diameter of 300 mm was used. The mold temperature was 120°C.
（離型性）
　上記脱気時間の評価と同様にプロセス用離型フィルムを上型のパーティング面に真空吸着（凹凸面（離型層Ａ側）を上型側とした）後、半導体チップを覆うように基板上に封止樹脂を充填し、基板に固定された半導体チップを下型に配置し、型締めした。このとき、成形金型の温度（成形温度）を１２０℃、成形圧力を１０ＭＰａ、成形時間を４００秒とした。そして、図１（ｃ）に示されるように、半導体チップを封止樹脂で封止した後、樹脂封止された半導体チップ（半導体パッケージ）を離型フィルムから離型した。
　離型フィルムの離型性を、以下の基準で評価した。
　　◎：離型フィルムが、金型の開放と同時に自然に剥がれる。
　　○：離型フィルムは自然には剥がれないが、手で引っ張ると（張力を加えると）簡単に剥がれる。
　　×：離型フィルムが、半導体パッケージの樹脂封止面に密着しており、手では剥がせない。 (Releasability)
In the same manner as in the evaluation of the degassing time, the process release film was vacuum-adsorbed to the parting surface of the upper mold (the uneven surface (release layer A side) was the upper mold side), and then the substrate was placed so as to cover the semiconductor chip. A semiconductor chip fixed to the substrate was placed on the lower mold and clamped. At this time, the mold temperature (molding temperature) was 120° C., the molding pressure was 10 MPa, and the molding time was 400 seconds. Then, as shown in FIG. 1C, after the semiconductor chip was sealed with a sealing resin, the resin-sealed semiconductor chip (semiconductor package) was released from the release film.
The releasability of the release film was evaluated according to the following criteria.
⊚: The release film is naturally peeled off at the same time as the mold is opened.
◯: The release film does not peel off naturally, but can be easily peeled off by hand pulling (applying tension).
x: The release film adhered to the resin sealing surface of the semiconductor package and could not be peeled off by hand.
（成形品の外観）
　上記工程で離型を行った後の、離型フィルム、および半導体パッケージの樹脂封止面の皺の状態を、以下の基準で評価した。
　　◎：離型フィルムおよび半導体パッケージのいずれにも皺が全くない。
　　○：離型フィルムにはわずかに皺があるが、半導体パッケージへの皺の転写はない。
　　×：離型フィルムはもちろん、半導体パッケージにも多数の皺あり。 (Appearance of molded product)
The wrinkles of the release film and the resin sealing surface of the semiconductor package after the release was performed in the above steps were evaluated according to the following criteria.
⊚: No wrinkles at all on either the release film or the semiconductor package.
◯: The release film has slight wrinkles, but the wrinkles are not transferred to the semiconductor package.
x: There are many wrinkles not only on the release film but also on the semiconductor package.
（金型追従性）
　上記工程で離型を行った際の離型フィルムの金型追従性を、以下の基準で評価した。
　　◎：半導体パッケージに、樹脂欠け（樹脂が充填されない部分）が全くない。
　　○：半導体パッケージの端部に、樹脂欠けが僅かにある（ただし皺による欠けは除く）
　　×：半導体パッケージの端部に、樹脂欠けが多くある（ただし皺による欠けは除く） (mold followability)
The mold followability of the release film when the mold was released in the above steps was evaluated according to the following criteria.
⊚: There is no resin chipping (portion not filled with resin) in the semiconductor package.
○: There is a slight chipping of resin at the edge of the semiconductor package (excluding chipping due to wrinkles)
×: There are many resin chippings at the edge of the semiconductor package (excluding chippings due to wrinkles)
　［実施例１］
（耐熱樹脂層Ｂ）
　耐熱樹脂層Ｂとして、膜厚１２μｍの二軸延伸ＰＥＴ（ポリエチレンテレフタレート）フィルム（東レ株式会社製、製品名：ルミラーＳ１０）を使用した。
（離型層Ａ及びＡ’）
　離型層Ａ及びＡ’として、無延伸の４－メチル－１－ペンテン共重合樹脂フィルムを使用した。具体的には、三井化学株式会社製４－メチル－１－ペンテン共重合樹脂（製品名：ＴＰＸ（登録商標）、銘柄名：ＭＸ０２２）」を２７０℃で溶融押出して、Ｔ型ダイのスリット幅を調整することにより、厚み１５μｍの無延伸フィルムを成膜したものを使用した。
　無延伸の４－メチル－１－ペンテン共重合樹脂フィルムは、一方のフィルム表面が、ＪＩＳ　Ｒ３２５７に基づく水接触角が３０°以上の場合、３０以下となるように、接着剤による接着性向上の観点からコロナ処理を施した。 [Example 1]
(Heat-resistant resin layer B)
As the heat-resistant resin layer B, a biaxially oriented PET (polyethylene terephthalate) film (manufactured by Toray Industries, Inc., product name: Lumirror S10) having a film thickness of 12 μm was used.
(Release layers A and A')
Unstretched 4-methyl-1-pentene copolymer resin films were used as the release layers A and A'. Specifically, a 4-methyl-1-pentene copolymer resin manufactured by Mitsui Chemicals, Inc. (product name: TPX (registered trademark), brand name: MX022)" is melt extruded at 270 ° C., and the slit width of the T-shaped die is A non-stretched film having a thickness of 15 μm was formed by adjusting the .
For the unstretched 4-methyl-1-pentene copolymer resin film, if one film surface has a water contact angle of 30° or more based on JIS R3257, the adhesiveness is improved by using an adhesive so that the water contact angle is 30° or less. Corona treatment was applied from the point of view.
(接着剤)
　各フィルムを貼り合せるドライラミ工程で使用する接着剤としては、以下のウレタン系接着剤Ａを用いた。
［ウレタン系接着剤Ａ］
　主剤：タケラック（登録商標）Ａ－６１６（三井化学株式会社製）。硬化剤：タケネート（登録商標）Ａ－６５（三井化学株式会社製）。主剤と硬化剤とを、質量比（主剤：硬化剤）が１６：１となるように混合し、希釈剤として酢酸エチルを用いた。 (glue)
Urethane-based adhesive A below was used as the adhesive used in the dry lamination step for laminating each film.
[Urethane adhesive A]
Main agent: Takelac (registered trademark) A-616 (manufactured by Mitsui Chemicals, Inc.). Curing agent: Takenate (registered trademark) A-65 (manufactured by Mitsui Chemicals, Inc.). The main agent and the curing agent were mixed so that the mass ratio (main agent:curing agent) was 16:1, and ethyl acetate was used as the diluent.
（積層フィルムの製造）
　二軸延伸ＰＥＴ（ポリエチレンテレフタレート）フィルムの一方の面に、グラビアコートでウレタン系接着剤Ａを１．５ｇ／ｍ２で塗工し、無延伸の４－メチル－１－ペンテン共重合樹脂フィルムのコロナ処理面をドライラミネートにて貼り合わせ後、続いてこのラミネートフィルムの二軸延伸ＰＥＴ（ポリエチレンテレフタレート）フィルム面の側に、ウレタン系接着剤Ａを１．５ｇ／ｍ２で塗工し、無延伸の４－メチル－１－ペンテン共重合樹脂フィルムのコロナ処理面をドライラミネートにて貼り合わせて、５層構造（離型層Ａ／接着層／耐熱樹脂層Ｂ／接着層／離型層Ａ’）の積層フィルムを得た。
　ドライラミネート条件は、基材幅９００ｍｍ、搬送速度３０ｍ／分、乾燥温度５０～６０℃、ラミネートロール温度５０℃、ロール圧力３．０ＭＰａとした。 (Manufacture of laminated film)
On one side of a biaxially stretched PET (polyethylene terephthalate) film, urethane-based adhesive A was applied at 1.5 g/m 2 by gravure coating, and a non-stretched 4-methyl-1-pentene copolymer resin film was obtained. After laminating the corona-treated surface by dry lamination, urethane-based adhesive A was applied at 1.5 g/m 2 to the biaxially oriented PET (polyethylene terephthalate) film surface side of the laminate film. The corona-treated surface of the stretched 4-methyl-1-pentene copolymer resin film is laminated by dry lamination to form a five-layer structure (release layer A / adhesive layer / heat-resistant resin layer B / adhesive layer / release layer A ') was obtained.
Dry lamination conditions were as follows: base material width 900 mm, transport speed 30 m/min, drying temperature 50 to 60° C., lamination roll temperature 50° C., roll pressure 3.0 MPa.
（金属製エンボスロールの製造）
　面長５７０ｍｍ、直径２００ｍｍの炭素鋼製のロールの表面に、粒度８０メッシュのアルミナ粒子を用いて、均一にブラスト処理を行った。その後、厚み１５μｍの硬質クロムメッキを施し、凹凸形成用の金属製エンボスロールを製造した。 (Manufacture of metal embossing rolls)
The surface of a carbon steel roll having a face length of 570 mm and a diameter of 200 mm was uniformly blasted with alumina particles having a grain size of 80 mesh. After that, hard chrome plating with a thickness of 15 μm was applied to manufacture a metal embossing roll for forming unevenness.
（凹凸の形成）
　上記で作製した５層構造（離型層Ａ／接着層／耐熱樹脂層Ｂ／接着層／離型層Ａ’）の積層フィルムを、上記で作製した金属製エンボスロールとゴムロールとの対の間に搬送し、フィルムの離型層Ａ側の面に凹凸を付与し、実施例１のプロセス用離型フィルムを作製した。
　エンボス加工の条件は、搬送速度：５ｍ／分、金属製エンボスロール温度：１２０℃、ロール間加圧力：７５ｋｇｆ／ｃｍとした。 (Formation of unevenness)
A laminate film having a five-layer structure (release layer A/adhesive layer/heat-resistant resin layer B/adhesive layer/release layer A′) prepared above is placed between the pair of metal embossing rolls and rubber rolls prepared above. , and unevenness was imparted to the release layer A side surface of the film to prepare a process release film of Example 1.
The conditions for embossing were a conveying speed of 5 m/min, a metal embossing roll temperature of 120° C., and an inter-roll pressure of 75 kgf/cm.
　上記で作製したプロセス用離型フィルムの表面粗さ（Ｓｄｒ及びＲＰｃ）、水接触角、引張弾性率、脱気時間、離型性、皺、及び金型追従性の評価結果を表１に示す。
　表面のＳｄｒ（展開界面面積率）が本発明の条件を満たす実施例１のプロセス用離型フィルムを用いると、短い脱気時間で、上型との間のエアーを完全に脱気することができた。
　また、離型フィルムが、金型の開放と同時に自然に剥がれる良好な離型性を示し、離型フィルムおよび半導体パッケージのいずれにも皺が全くなく、すなわち皺が十分に抑制され、半導体パッケージに樹脂欠けが全くない良好な金型追従性を示した。
　すなわち、実施例１のプロセス用離型フィルムは、脱気時間が短く、かつ、離型性、皺の抑制、及び金型追従性が良好なプロセス用離型フィルムであった。 Table 1 shows the evaluation results of the surface roughness (Sdr and RPc), water contact angle, tensile modulus, degassing time, releasability, wrinkles, and mold followability of the process release film produced above. .
When using the process release film of Example 1 whose surface Sdr (spread surface area ratio) satisfies the conditions of the present invention, it is possible to completely deaerate the air between the upper mold and the film in a short deaeration time. did it.
In addition, the release film exhibits good releasability in that it is naturally peeled off at the same time as the mold is opened, and neither the release film nor the semiconductor package has any wrinkles. It exhibited excellent mold followability with no resin chipping.
That is, the process release film of Example 1 was a process release film that had a short degassing time and excellent releasability, suppression of wrinkles, and mold followability.
［実施例２］
　金属製エンボスロールの製造にあたり、粒度４０メッシュ、次いで粒度１００メッシュのアルミナ粒子の順に、均一にブラスト処理を行ったことを除くほか、実施例１と同様にしてプロセス用離型フィルムを作製して、評価した。
　結果を、表１に示す。
　実施例１よりも更に脱気時間が短く、かつ、離型性、皺の抑制、及び金型追従性が良好なプロセス用離型フィルムであった。 [Example 2]
In the production of the metal embossing roll, a process release film was produced in the same manner as in Example 1, except that the alumina particles with a particle size of 40 mesh and then alumina particles with a particle size of 100 mesh were uniformly blasted in that order. ,evaluated.
The results are shown in Table 1.
The process release film had a shorter degassing time than that of Example 1, and had good releasability, suppression of wrinkles, and mold followability.
［実施例３］
　金属製エンボスロールの製造にあたり、粒度８０メッシュ、次いで粒度１００メッシュのアルミナ粒子の順に、均一にブラスト処理を行ったことを除くほか、実施例１と同様にしてプロセス用離型フィルムを作製して、評価した。
　結果を、表１に示す。
　実施例１よりも更に脱気時間が短く、かつ、離型性、皺の抑制、及び金型追従性が良好なプロセス用離型フィルムであった。 [Example 3]
In the production of the metal embossing roll, a process release film was produced in the same manner as in Example 1, except that the alumina particles with a particle size of 80 mesh and then alumina particles with a particle size of 100 mesh were uniformly blasted in that order. ,evaluated.
The results are shown in Table 1.
The process release film had a shorter degassing time than that of Example 1, and had good releasability, suppression of wrinkles, and mold followability.
［実施例４］
　フィルム表面への凹凸の形成の際の金属製エンボスロール温度を１５０℃としたことを除くほか、実施例１と同様にしてプロセス用離型フィルムを作製して、評価した。
　結果を、表１に示す。
　実施例１よりも更に脱気時間が短く、かつ、離型性、皺の抑制、及び金型追従性が良好なプロセス用離型フィルムであった。 [Example 4]
A process release film was produced and evaluated in the same manner as in Example 1, except that the temperature of the metal embossing roll was set to 150° C. when forming the irregularities on the film surface.
The results are shown in Table 1.
The process release film had a shorter degassing time than that of Example 1, and had good releasability, suppression of wrinkles, and mold followability.
［比較例１］
　金属製エンボスロールの製造にあたり、粒度１００メッシュのアルミナ粒子を用いて均一にブラスト処理を行ったことを除くほか、実施例１と同様にしてプロセス用離型フィルムを作製して、評価した。
　結果を、表１に示す。
　離型性、皺の抑制、及び金型追従性が良好なプロセス用離型フィルムであったものの、上記各実施例と比較して、脱気時間が長かった。 [Comparative Example 1]
In the production of the metal embossing roll, a process release film was produced and evaluated in the same manner as in Example 1, except that alumina particles with a particle size of 100 mesh were uniformly blasted.
The results are shown in Table 1.
Although the process release film had good releasability, wrinkle suppression, and mold followability, the degassing time was longer than in each of the above examples.
Figure JPOXMLDOC01-appb-T000002
 
Figure JPOXMLDOC01-appb-T000002
 
　本発明のプロセス用離型フィルムは、従来技術では実現できなかった高い脱気性を示し、また高い脱気性と、優れた離型性、皺の抑制性能、及び金型追従性を、従来技術の限界を超えた高いレベルで兼ね備えるので、これを用いることで、半導体チップ等を樹脂封止等して得られる成形品等を、従来技術の限界を超えた高い生産性及び品質で製造することができるなどの実用上高い価値を有する技術的効果をもたらすものであり、半導体プロセス産業をはじめとする産業の各分野において、高い利用可能性を有する。
　また、本発明のプロセス用離型フィルムは、半導体パッケージに限らず、繊維強化プラスチック成形プロセス、プラスチックレンズ成形プロセス等における種々の金型成形にも用いることができるので、半導体産業以外の金型成形を行う産業の各分野においても、高い利用可能性を有する。 The process release film of the present invention exhibits high degassing properties that could not be achieved by conventional techniques, and also exhibits high degassing properties, excellent releasability, wrinkle suppression performance, and mold followability compared to conventional technologies. Since it is combined at a high level that exceeds the limit, by using this, it is possible to manufacture molded products obtained by resin-sealing semiconductor chips etc. with high productivity and quality beyond the limits of conventional technology. It brings about technical effects of high practical value, such as being able to make it possible, and has high applicability in various fields of industry including the semiconductor process industry.
In addition, the process release film of the present invention can be used not only for semiconductor packages but also for various mold molding processes such as fiber-reinforced plastic molding processes and plastic lens molding processes. It has high applicability in each field of industry that conducts
１、１－２、１－３：　離型フィルム
２：　上金型
３：　吸引口
４：　封止樹脂
４－２：半導体パッケージ
５：　下金型
６：　半導体チップ
７：　基板
８：　成形金型
  1, 1-2, 1-3: Release film 2: Upper mold 3: Suction port 4: Sealing resin 4-2: Semiconductor package 5: Lower mold 6: Semiconductor chip 7: Substrate 8: Molding mold

Claims (9)

  1. 　２面のうち少なくとも一方の面に凹凸が形成されており、該凹凸が形成されている面のレーザー顕微鏡で測定したＳｄｒ（展開界面面積率）が４．０～５０．０％である、プロセス用離型フィルム。 A process in which unevenness is formed on at least one of the two surfaces, and the surface on which the unevenness is formed has an Sdr (development interface area ratio) measured with a laser microscope of 4.0 to 50.0%. release film.
  2. 　該凹凸が形成されていてＳｄｒ（展開界面面積率）が４．０～５０．０％である面のＲＰｃ（ピークカウント）が３０～８７である、請求項１に記載のプロセス用離型フィルム。 2. The process release film according to claim 1, wherein the RPc (peak count) of the surface on which the irregularities are formed and whose Sdr (spread interface area ratio) is 4.0 to 50.0% is 30 to 87. .
  3. 　該凹凸が形成されていてＳｄｒ（展開界面面積率）が４．０～５０．０％である面、の反対側の面の水接触角が９０～１３０°である、請求項１又は２に記載のプロセス用離型フィルム。 The water contact angle of the surface opposite to the surface on which the unevenness is formed and the Sdr (development interface area ratio) is 4.0 to 50.0% is 90 to 130°. A release film for the described process.
  4. 　厚みが１０～１００μｍである、請求項１～３のいずれか一項に記載のプロセス用離型フィルム。 The process release film according to any one of claims 1 to 3, which has a thickness of 10 to 100 µm.
  5. 　１２０℃における引張弾性率が３０～５００ＭＰａである、請求項１～４のいずれか一項に記載のプロセス用離型フィルム。 The process release film according to any one of claims 1 to 4, which has a tensile modulus at 120°C of 30 to 500 MPa.
  6. 　１７０℃における引張弾性率が２０～４００ＭＰａである、請求項１～５のいずれか一項に記載のプロセス用離型フィルム。 The process release film according to any one of claims 1 to 5, which has a tensile modulus at 170°C of 20 to 400 MPa.
  7. 　金属製ロールの表面に、粒度４０～１００メッシュの粒子を用いてブラスト処理を行い、金属製エンボスロールを製造する工程、及び
    　フィルムを前記金属製エンボスロールと他のロールとの間を通過させて該フィルム表面に凹凸を形成する工程、
    　を有する、請求項１～６のいずれか一項に記載のプロセス用離型フィルムの製造方法。     A step of blasting the surface of the metal roll with particles having a particle size of 40 to 100 mesh to produce a metal embossing roll, and passing the film between the metal embossing roll and another roll forming irregularities on the surface of the film;
    The method for producing a process release film according to any one of claims 1 to 6.
  8. 　半導体封止工程において使用される、請求項１～６のいずれか一項に記載のプロセス用離型フィルム。 The process release film according to any one of claims 1 to 6, which is used in a semiconductor encapsulation process.
  9. 　樹脂封止半導体の製造方法であって、
    　成形金型内の所定位置に、樹脂封止される半導体装置を配置する工程と、
    　前記成形金型内面に、請求項１～６のいずれか一項に記載のプロセス用離型フィルムを、前記凹凸が形成されていてＳｄｒ（展開界面面積率）が４．０～５０．０％である面、が前記成形金型内面と対向するように配置する工程と、
    　前記プロセス用離型フィルムと前記金型内面との間を脱気する工程と、
    　前記成形金型を型締めした後、前記半導体装置と、前記半導体封止プロセス用離型フィルムとの間に配置された封止樹脂を硬化させる工程と、
    　を有する、上記樹脂封止半導体の製造方法。
          A method for manufacturing a resin-encapsulated semiconductor,
    A step of placing a semiconductor device to be resin-sealed at a predetermined position in a molding die;
    The process release film according to any one of claims 1 to 6 is applied to the inner surface of the molding die, and the unevenness is formed and the Sdr (development interface area ratio) is 4.0 to 50.0%. a step of arranging the surface so that it faces the inner surface of the molding die;
    deaeration between the process release film and the inner surface of the mold;
    A step of curing the encapsulating resin disposed between the semiconductor device and the release film for semiconductor encapsulation process after clamping the mold;
    A method for manufacturing the resin-encapsulated semiconductor.
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JP2013159617A (en) * 2012-02-01 2013-08-19 Mitsui Chemicals Tohcello Inc Resin seat, manufacturing method for the same, resin sheet for sealing solar cell composed of the resin sheet, and solar cell module using the resin sheet
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