WO2023045733A1 - 一种声表面波谐振器和射频滤波器 - Google Patents

一种声表面波谐振器和射频滤波器 Download PDF

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Publication number
WO2023045733A1
WO2023045733A1 PCT/CN2022/116716 CN2022116716W WO2023045733A1 WO 2023045733 A1 WO2023045733 A1 WO 2023045733A1 CN 2022116716 W CN2022116716 W CN 2022116716W WO 2023045733 A1 WO2023045733 A1 WO 2023045733A1
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Prior art keywords
sub
bus bar
gap
acoustic wave
surface acoustic
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PCT/CN2022/116716
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English (en)
French (fr)
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宋崇希
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江苏卓胜微电子股份有限公司
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Publication of WO2023045733A1 publication Critical patent/WO2023045733A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves

Definitions

  • the present disclosure relates to the communication field, in particular to a surface acoustic wave resonator and a radio frequency filter.
  • the radio frequency filter widely used in wireless communication terminals is a surface acoustic wave filter, which is responsible for receiving and transmitting radio frequency signals, and outputs a signal of a specific frequency among various input radio frequency signals.
  • the market demand for filters tends to be complicated, high-end, and miniaturized.
  • the SAW resonator and RF filter still adopting the traditional design will have lateral energy leakage in practical applications, and the higher the frequency, the more serious the lateral energy leakage will be, resulting in a decrease in the Q value of the entire SAW resonator.
  • an embodiment of the present disclosure provides a surface acoustic wave resonator, and the surface acoustic wave resonator includes:
  • the electrode layer is located on a side of the piezoelectric layer away from the substrate;
  • the electrode layer includes an interdigital transducer, and the interdigital transducer includes: a first bus bar, a first electrode finger and a first dummy electrode finger, wherein the first electrode finger and the first dummy electrode finger alternately arranged to connect to the first bus bar; second bus bar, second electrode fingers and second dummy electrode fingers, wherein the second electrode fingers and second dummy electrode fingers are alternately arranged and connected to the second bus bar strip; the first electrode finger and the second dummy electrode finger are arranged oppositely, there is a first gap between the first electrode finger and the second dummy electrode finger, and the second electrode finger and the first dummy electrode finger A dummy electrode finger is arranged opposite to each other, and there is a second gap between the second electrode finger and the first dummy electrode finger, wherein the included angle between the arrangement direction of each of the first gaps and the first direction is greater than Setting the angle, the angle between the arrangement direction of each of the second gaps and the first direction is greater than the set angle, and in the direction parallel to the plane
  • Each of the first electrode finger and the second electrode finger includes a main body and a terminal integrally connected with the main body, and the end of the first electrode finger is located on a side of the main body away from the first bus bar, The ends of the second electrode fingers are located on the side of the main body away from the second bus bar;
  • Both the first dummy electrode finger and the second dummy electrode finger include a main body and an end integrally connected with the main body, and the end of the first dummy electrode finger is located at a side of the main body far away from the first bus bar. On one side, the ends of the second dummy electrode fingers are located on the side of the main body away from the second bus bar;
  • the first bus bar includes at least one first sub-bus bar and at least one second sub-bus bar, the first sub-bus bar is connected to the second sub-bus bar;
  • the second bus bar includes at least one third sub-bus bar and at least one fourth sub-bus bar, the third sub-bus bar is connected to the fourth sub-bus bar;
  • the first gap includes a first sub-gap and a second sub-gap
  • the second gap includes a third sub-gap and a fourth sub-gap
  • the first sub-gap and the third sub-gap are located in the first Between the sub-bus bar and the third sub-bus bar, the second sub-gap and the fourth sub-gap are located between the second sub-bus bar and the fourth sub-bus bar;
  • each of the first sub-gap is the same as the arrangement direction of each of the third sub-gap
  • the arrangement direction of each of the second sub-gap is the same as the arrangement direction of each of the fourth sub-gap.
  • the arrangement direction of the first sub-gap is different from the arrangement direction of the second sub-gap; each of the ends includes a groove, and the groove shares a symmetrical axis with the end. Along the length direction of the first electrode finger, the depth of the groove is less than the length of the end;
  • the width of the end is greater than the width of the main body.
  • the ratio of the width of the end to the width of the main body includes 1.2-1.8;
  • the ratio of the length of the end to the depth of the groove includes 1.8 ⁇ 2.2.
  • the range of the included angle between the arrangement direction of each of the first gap arrangements and the first direction includes 3° to 15°, and the angle between the arrangement direction of each of the second gap arrangements and the first direction The included angle ranges from 3° to 15°.
  • the length of the first gap includes 0.18-0.3 ⁇ m;
  • the length of the second gap includes 0.18-0.3 ⁇ m.
  • the electrode layer further includes a reflective grid structure
  • the reflective grid structure includes a third bus bar, a fourth bus bar and multiple reflective grids;
  • the third bus bar is arranged parallel to the fourth bus bar
  • the first end of the reflection grid is connected to the third bus bar, and the second end of the reflection grid is connected to the fourth bus bar;
  • the reflective grid structure is located on both sides of the interdigital transducer
  • the third bus bar is perpendicular to the reflective grid
  • the third bus bar is parallel to the first direction.
  • the surface acoustic wave resonator provided in the embodiment of the present disclosure further includes an energy trap layer, and the energy trap layer is located between the substrate and the piezoelectric layer;
  • the first dielectric layer is located between the energy trap layer and the piezoelectric layer;
  • a second dielectric layer, the second dielectric layer is located on the side of the electrode layer away from the piezoelectric layer and covers the electrode layer.
  • the first bus bar includes at least two first sub-bus bars and at least two second sub-bus bars, and the first sub-bus bars and the second sub-bus bars are alternately connected;
  • the second bus bar includes at least two third sub-bus bars and at least two fourth sub-bus bars, and the third sub-bus bars are alternately connected to the fourth sub-bus bars.
  • the number of first electrode fingers connected to the first sub-bus bar is not equal to the number of first electrode fingers connected to the second sub-bus bar.
  • an embodiment of the present disclosure further provides a radio frequency filter, where the radio frequency filter includes the surface acoustic wave resonator provided in any embodiment of the present disclosure.
  • the first bus bar in the interdigital transducer includes at least one first sub-bus bar and at least one second sub-bus bar
  • the second bus bar includes at least one The third sub-bus bar and the fourth sub-bus bar
  • the first sub-bus bar is connected to the second sub-bus bar and is not parallel
  • the third sub-bus bar is connected to the fourth sub-bus bar and is not parallel
  • the first gap is arranged at Between the first electrode fingers and the second dummy electrode fingers, the angle between the arrangement direction and the first direction is larger than the set angle
  • the second gap is arranged between the second electrode fingers and the first dummy electrode fingers
  • the angle between the arrangement direction and the first direction is larger than the set angle
  • the first electrode fingers, the second electrode fingers, the first dummy electrode fingers and the second dummy electrode fingers all include a main body and a terminal integrally connected with the main body , wherein each end head includes a groove, and in the first direction, the
  • FIG. 1 is a schematic structural diagram of a surface acoustic wave resonator provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of an interdigital transducer provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • Fig. 4 is a structural schematic diagram of an existing interdigital transducer
  • FIG. 5 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • FIG. 6 is an actual measurement diagram of the admittance amplitude of a surface acoustic wave resonator provided by an embodiment of the present disclosure and the admittance amplitude of an existing surface acoustic wave resonator;
  • FIG. 7 is an actual measurement diagram of the real part of the admittance of a surface acoustic wave resonator provided by an embodiment of the present disclosure and the real part of the admittance of an existing surface acoustic wave resonator;
  • FIG. 8 is a comparison chart of the Smith curve of the surface acoustic wave resonator provided by the embodiment of the present disclosure and the Smith curve of the existing surface acoustic wave resonator;
  • Fig. 9 is an actual measurement diagram of the Q value of the surface acoustic wave resonator provided by the embodiment of the present disclosure and the Q value of the surface acoustic wave resonator in the prior art;
  • FIG. 10 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • Fig. 11 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • Fig. 12 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • FIG. 1 is a schematic structural diagram of a surface acoustic wave resonator provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of an interdigital transducer provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of an interdigital transducer provided by an embodiment of the present disclosure. Another structural diagram of an interdigital transducer, referring to Fig. 1, Fig. 2 and Fig.
  • the surface acoustic wave resonator includes: a substrate 110; a piezoelectric layer 120 on the substrate 110; an electrode layer 130, The electrode layer 130 is located on the side of the piezoelectric layer 120 away from the substrate 110; the electrode layer 130 includes an interdigital transducer 131, and the interdigital transducer 131 includes: the first bus bar 10, the first electrode fingers 20 and the second A dummy electrode finger 30, wherein the first electrode fingers 20 and the first dummy electrode fingers 30 are alternately arranged and connected to the first bus bar 10; the second bus bar 40, the second electrode fingers 50 and the second dummy electrode fingers 60, Wherein, the second electrode fingers 50 and the second dummy electrode fingers 60 are alternately arranged and connected to the second bus bar 40; the first electrode fingers 20 and the second dummy electrode fingers 60 are arranged oppositely, and the first electrode fingers 20 and the second dummy electrode fingers There is a first gap 70 between the fingers 60, the second electrode fingers 50 and the first dummy electrode fingers 30 are arranged oppositely
  • the first direction x is perpendicular to the length direction of the first electrode fingers 20, wherein, in the length direction of the first electrode fingers 20, the lengths of any two first electrode fingers 20 are equal, The lengths of any two first dummy electrode fingers 30 are equal, the lengths of any two second electrode fingers 50 are equal, the lengths of any two second dummy electrode fingers 60 are equal, and the set angle is greater than 0°;
  • the first electrode fingers 20 and the second electrode finger 50 both include a main body 11 and a terminal 12 integrally connected with the main body 11, the terminal 12 of the first electrode finger 20 is located on the side of the main body 11 of the first electrode finger 20 away from the first bus bar 10,
  • the end 12 of the second electrode finger 50 is located on the side of the main body 11 of the second electrode finger 50 away from the second bus bar 40;
  • the first dummy electrode finger 30 and the second dummy electrode finger 60 both include the main body 11 and are integrated with the main body 11
  • the terminal 12 of the connection, the terminal 12 of the first electrode fingers 20 are
  • the material of the substrate 110 can be high-resistance silicon, and the high-resistance silicon can be P-type high-resistance silicon or N-type high-resistance silicon, and the resistivity of high-resistance silicon is greater than 2000 ⁇ cm.
  • the resistance of high-resistance silicon Rate greater than 10000 ⁇ cm.
  • the material of the piezoelectric layer 120 can be lithium tantalate and lithium niobate, wherein the cutting angle of lithium tantalate can be 30°-50°, and the thickness of the piezoelectric layer 120 can be in the range of 300-1000nm.
  • a metal film is deposited on the surface by means of electron beam evaporation, plasma, magnetron sputtering, etc.
  • the material for depositing the metal film can be titanium, chromium, copper, silver, aluminum, etc. or a combination thereof.
  • the range of the included angle between the arrangement direction of each first gap 70 and the first direction x can be 3-15°
  • the range of the included angle between the arrangement direction of each second gap 80 and the first direction x can be is 3-15°
  • the first electrode finger 20, the second electrode finger 50, the first dummy electrode finger 30 and the second dummy electrode finger 60 all include a main body 11 and a terminal 12, the thickness of the terminal 12 is the same as the thickness of the main body 11 same.
  • the first bus bar 10 includes a first sub-bus bar 21 and a second sub-bus bar 22, and the second bus bar 40 includes a third sub-bus bar 41 and a fourth sub-bus bar 42 .
  • the arrangement direction of the first sub-gap 71 is parallel to the extension direction of the first sub-bus bar 21, the arrangement direction of the second sub-gap 72 is parallel to the extension direction of the second sub-bus bar 22, and the third sub-gap
  • the arrangement direction of 81 is parallel to the extension direction of the third sub-bus bar 41, the arrangement direction of the fourth sub-gap 82 is parallel to the extension direction of the fourth sub-bus bar 42, and the first bus bar 10 is set to include at least One first sub-bus bar 21 and at least one second sub-bus bar 22, the second bus bar 40 includes at least one third sub-bus bar 41 and at least one fourth sub-bus bar 42, and the extension of the first sub-bus bar 21 The direction is different from the extension direction of the second sub-bus bar 22, and the extension direction of the third sub-
  • FIG. 3 schematically shows an enlarged view of the structure of the terminal 12. Referring to FIG. 3, in the first direction x, the width a of the terminal 12 is greater than the width b of the main body 11, and along the length direction of the first electrode finger, The depth c of the groove 13 is smaller than the length d of the end 12 .
  • FIG. 4 is a structural schematic diagram of an existing interdigital transducer, referring to Fig. 4, the first long electrode finger 111, the second long electrode finger 113, the first short electrode finger 112 and the second short electrode finger in Fig. 4 None of the electrode fingers 114 includes a terminal.
  • FIG. 5 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure. Referring to FIG. 5 , the first electrode finger 20 in this embodiment is taken as an example for illustration. , add two cuboids on the side of the first electrode finger in FIG.
  • the length e of the first gap in FIG. 3 is smaller than the length m of the first gap in FIG. 4 .
  • the length of the first gap in the interdigital transducer provided in this embodiment refers to the minimum distance between the oppositely arranged ends in the length direction of the first electrode finger.
  • the length e of the first gap is shown in Figure 3 As shown, similarly, the length of the second gap has the same measurement method as the length of the first gap.
  • FIG. 6 is an actual measurement diagram of the admittance amplitude of a surface acoustic wave resonator provided by an embodiment of the present disclosure and the admittance amplitude of an existing surface acoustic wave resonator.
  • FIG. 7 is a graph of an admittance amplitude provided by an embodiment of the present disclosure.
  • FIG. 7 all represent the measured curve of existing surface acoustic wave resonator, can find out clearly from Fig. 6 and Fig. 7, existing surface acoustic wave resonator
  • the transverse mode ripples that appear in the relationship curve between the real part of the admittance and the frequency of the wave resonator, in practical applications, the generation of many transverse mode ripples is not suitable for the generation of radio frequency filters, the surface acoustic wave resonator provided by the embodiment of the present disclosure
  • the transverse ripple can be effectively suppressed, and the transverse energy leakage of the resonator can be effectively and obviously reduced.
  • FIG. 8 is a comparison chart of the Smith curve of the surface acoustic wave resonator provided by the embodiment of the present disclosure and the Smith curve of the existing surface acoustic wave resonator.
  • the thick solid line in FIG. 8 represents the surface acoustic wave resonator provided by this embodiment
  • the measured curve of the dotted line represents the measured curve of the existing surface acoustic wave resonator, as can be seen from Figure 8, the performance of the surface acoustic wave resonator provided by this embodiment is compared with the surface acoustic wave resonator in the traditional technology performance is superior.
  • FIG. 8 is a comparison chart of the Smith curve of the surface acoustic wave resonator provided by the embodiment of the present disclosure and the Smith curve of the existing surface acoustic wave resonator.
  • the thick solid line in FIG. 8 represents the surface acoustic wave resonator provided by this embodiment
  • the measured curve of the dotted line represents the measured curve of
  • FIG. 9 is an actual measurement diagram of the Q value of the surface acoustic wave resonator provided by the embodiment of the present disclosure and the Q value of the prior art surface acoustic wave resonator.
  • the solid line in FIG. 9 represents the surface acoustic wave resonance provided by this embodiment.
  • the structure of the conventional surface acoustic wave resonator in FIGS. 6 to 9 is the structure shown in FIG. 4 .
  • An embodiment of the present disclosure provides a surface acoustic wave resonator.
  • the first bus bar in the interdigital transducer includes at least one first sub-bus bar and at least one second sub-bus bar, and the second bus bar includes at least one The third sub-bus bar and the fourth sub-bus bar, the first sub-bus bar is connected to the second sub-bus bar and is not parallel, the third sub-bus bar is connected to the fourth sub-bus bar and is not parallel, and the first electrode finger is connected to the second sub-bus bar.
  • the angle between the arrangement direction of the first gap arrangement between the two dummy electrode fingers and the first direction is larger than the set angle
  • the arrangement of the second gap arrangement between the second electrode fingers and the first dummy electrode fingers The angle between the direction and the first direction is greater than the set angle
  • the first electrode finger, the second electrode finger, the first dummy electrode finger and the second dummy electrode finger all include a main body and a terminal integrally connected with the main body, wherein , each end includes a groove.
  • the width of the end is larger than the width of the main body.
  • the ratio of the width of the end to the width of the main body includes 1.2-1.8.
  • the ratio of the length of the end to the depth of the groove includes 1.8 ⁇ 2.2.
  • the width of the end is set to be 1.2 to 1.8 times the width of the main body, and along the length direction of the first electrode finger, the length of the end is set to be 0.3 to 0.7 times the wavelength of the interdigital transducer , the ratio of the length of the end to the depth of the groove includes 1.8 to 2.2, which can further make the end block the lateral energy leakage in the surface acoustic wave, better suppress the clutter in the surface acoustic wave, and further improve the surface acoustic wave resonator The Q value.
  • the range of the included angle between the arrangement direction of each of the first gap arrangements and the first direction includes 3° to 15°, and the angle between the arrangement direction of each of the second gap arrangements and the first direction The included angle ranges from 3° to 15°.
  • the lengths of any two first electrode fingers are equal, the lengths of any two first dummy electrode fingers are equal, the lengths of any two second electrode fingers are equal, and any two If the lengths of the second dummy electrode fingers are equal, the extending direction of the first sub-bus bar is the same as that arranged in the first sub-gap, and the extending direction of the second bus bar is the same as that arranged in the second sub-gap.
  • the distribution direction is the same, the extension direction of the third sub-bus bar is the same as the arrangement direction of the third sub-gap, the extension direction of the fourth bus bar is the same as the arrangement direction of the fourth sub-gap arrangement, and each The range of the included angle between the arrangement direction of the first gap arrangement and the first direction includes 3° to 15°, and the range of the included angle between the arrangement direction of each of the second gap arrangements and the first direction includes 3-15°, the surface acoustic wave resonator provided in this embodiment can better suppress the clutter in the surface acoustic wave, and further improve the Q value of the surface acoustic wave resonator.
  • the length of the first gap includes 0.18-0.3 ⁇ m; the length of the second gap includes 0.18-0.3 ⁇ m.
  • the length of the first gap is 0.18-0.3 ⁇ m
  • the length of the second gap is 0.18-0.3 ⁇ m, which can further prevent the tip from leaking lateral energy in the surface acoustic wave and better suppress the noise in the surface acoustic wave. wave, further improving the Q value of the surface acoustic wave resonator.
  • FIG. 10 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • the electrode layer further includes a reflective grid structure 132;
  • the reflective grid structure 132 includes a third bus bar 90, The fourth bus bar 91 and a plurality of reflective grids 92;
  • the third bus bar 90 is arranged in parallel with the fourth bus bar 91;
  • the first end of the reflective grid 92 is connected with the third bus bar 90, and the second end of the reflective grid 92 is connected with the first Four bus bars 91 are connected; in the first direction x, the reflection grid structure 132 is located on both sides of the interdigital transducer 131;
  • the third bus bar 90 is perpendicular to the reflection grid 92 and the third bus bar 90 is perpendicular to the first direction x parallel.
  • the reflective grating structure 132 can reflect the energy of the surface acoustic wave and concentrate the energy in the interdigital transducer 131.
  • a dummy electrode finger is parallel to the second dummy electrode finger to further ensure that the reflective grating structure 132 concentrates the energy of the reflected surface acoustic wave into the interdigital transducer 131, further improving the Q value of the surface acoustic wave resonator, and the reflective grating
  • the number of bars can be twenty.
  • the SAW resonator further includes an energy trapping layer 140, the energy trapping layer 140 is located between the substrate 110 and the piezoelectric layer 120; a first dielectric layer 150, the first dielectric layer 150 is located Between the energy trap layer 140 and the piezoelectric layer 120 ; the second dielectric layer 160 , the second dielectric layer 160 is located on the side of the electrode layer 130 away from the piezoelectric layer 120 and covers the electrode layer 130 .
  • an energy trapping layer 140 is prepared on the substrate 110.
  • the material of the energy trapping layer 140 can be polysilicon.
  • the setting of the energy trapping layer 140 can reduce the accumulation of charges and further improve the Q value of the surface acoustic wave resonator.
  • a layer of silicon dioxide with a low sonic velocity is grown by plasma-enhanced chemical vapor deposition or thermal oxidation of silicon to form the first dielectric layer 150.
  • the planarization process makes the thickness of the first dielectric layer 150 finally controlled in the range of 300-800 nm, and the first dielectric layer 150 can further improve the temperature drift coefficient.
  • the second dielectric layer 160 serves as a passivation layer and a frequency modulation layer of the surface acoustic wave resonator.
  • the material of the second dielectric layer 160 can be silicon dioxide or silicon nitride.
  • the second dielectric layer 160 covers the electrode layer 130 .
  • the substrate 110, the energy trap layer 140 and the first dielectric layer 150 constitute a composite multilayer substrate, and the composite multilayer substrate in the embodiments of the present disclosure can enable surface acoustic wave resonators and radio frequency filters to achieve low insertion loss and passband Features such as smoothness, high Q value, and excellent low frequency temperature.
  • FIG. 11 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • the first bus bar 10 includes at least two first sub-bus bars 21 and at least two second sub-bus bars 21. Two sub-bus bars 22, the first sub-bus bars 21 and the second sub-bus bars 22 are alternately connected;
  • the second bus bar 40 includes at least two third sub-bus bars 41 and at least two fourth sub-bus bars 42, the third The sub-bus bars 41 are alternately connected to the fourth sub-bus bars 42 .
  • the surface acoustic wave resonator including two or more first sub-bus bars 21, second sub-bus bars 22, third sub-bus bars 41 and fourth sub-bus bars 42 can also reduce the transverse energy Leakage, thereby improving the Q value of the resonator, thereby reducing the insertion loss of the filter.
  • FIG. 12 is a schematic structural diagram of another interdigital transducer provided by an embodiment of the present disclosure.
  • the first sub-bus bar 21 connects the number of first electrode fingers 20 and the second sub-bus bar 22 The numbers of connected first electrode fingers 20 are not equal.
  • the number of first electrode fingers 20 connected to the first sub-bus bar 21 is greater than the number of first electrode fingers 20 connected to the second sub-bus bar 22 , and the first sub-bus bar 21 and the first direction x
  • the size of the included angle may also be different from the size of the included angle between the second sub-bus bar 22 and the first direction x. Setting the number of the first sub-bus bar 21 connected to the first electrode fingers 20 is not equal to the number of the second sub-bus bar 22 connected to the first electrode fingers 20, which can also reduce the leakage of lateral energy, thereby improving the Q value of the resonator, and then Reduce the insertion loss of the filter.
  • An embodiment of the present disclosure further provides a radio frequency filter, where the radio frequency filter includes the surface acoustic wave resonator provided in any embodiment of the present disclosure.
  • the radio frequency filter provided by the embodiment of the present disclosure has corresponding beneficial effects with the surface acoustic wave resonator provided by any embodiment of the present disclosure.
  • the detailed technical details of this embodiment are not detailed, but the surface acoustic wave resonator provided by any embodiment of the present disclosure is detailed. device.

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Abstract

本公开实施例提供一种声表面波谐振器和射频滤波器，该声表面波谐振器包括衬底(110)；位于衬底(110)上的压电层(120)；电极层(130)位于压电层(120)远离衬底(110)的一侧；电极层(130)包括叉指式换能器(131)，叉指式换能器(131)包括：第一汇流条(10)、第一电极指(20)和第一虚设电极指(30)；第二汇流条(40)、第二电极指(50)和第二虚设电极指(60)；第一汇流条(10)包括至少一条第一子汇流条(21)和至少一条第二子汇流条(22)；第二汇流条(40)包括至少一条第三子汇流条(41)和至少一条第四子汇流条(42)。

Description

一种声表面波谐振器和射频滤波器
相关申请的交叉引用
本公开要求于2021年09月27日提交中国专利局、申请号为202122353351.9、发明名称为“一种声表面波谐振器和射频滤波器”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及通信领域，特别是涉及一种声表面波谐振器和射频滤波器。
背景技术
随着通信技术从2G发展至5G，通信频段数目逐步增加(从2G的4个频段上升到5G的50余个频段)。为了提高智能手机对不同通信制式的兼容能力，5G智能手机所需要的滤波器用量将显著上升，推动滤波器市场大规模增长。目前无线通信终端中广泛应用的射频滤波器是声表面波滤波器，其负责接收和发射通道的射频信号，将输入的多种射频信号中特定频率的信号输出。同时，随着移动通讯技术的持续发展和射频前端模组化发展，市场对滤波器的需求趋向复杂化，高端化，小型化。
基于单晶压电钽酸锂衬底的声表面波器件已广泛应用于射频滤波器，受限于单晶压电材料的Q值和高频率温度系数，已难满足射频前端芯片的要求。
仍然采用传统设计的声表面波谐振器和射频滤波器在实际应用中会出现横向能量泄露，频率越高，横向能量泄露越严重，从而导致整个声表面波谐振器Q值的降低。
发明内容
第一方面，本公开实施例提供一种声表面波谐振器，声表面波谐振器包括：
衬底；
位于所述衬底上的压电层；
电极层，所述电极层位于所述压电层远离所述衬底的一侧；
所述电极层包括叉指式换能器，所述叉指式换能器包括：第一汇流条、第一电极指和第一虚设电极指，其中，第一电极指和第一虚设电极指交替排布连接至所述第一汇流条；第二汇流条、第二电极指和第二虚设电极指，其中，第二电极指和第二虚设电极指交替排布连接至所述第二汇流条；所述第一电极指和所述第二虚设电极指相对设置，所述第一电极指和所述第二虚设电极指之间具有第一间隙，所述第二电极指和所述第一虚设电极指相对设置，所述第二电极指和所述第一虚设电极指之间具有第二间隙，其中，各所述第一间隙排布的排布方向与第一方向的夹角大于设定夹角，各所述第二间隙排布的排布方向与所述第一方向的夹角大于设定夹角，在与所述压电层的平面平行的方向上，所述第一方向与所述第一电极指的长度方向垂直，其中，在所述第一电极指的长度方向上，任意两个所述第一电极指的长度相等，任意两个所述第一虚设电极指的长度相等，任意两个所述第二电极指的长度相等，任意两个所述第二虚设电极指的长度相等，所述设定夹角大于0°；
所述第一电极指和所述第二电极指均包括主体和与所述主体一体连接的端头，所述第一电极指的端头位于其主体远离所述第一汇流条的一侧，所述第二电极指的端头位于其主体远离所述第二汇流条的一侧；
所述第一虚设电极指和所述第二虚设电极指均包括主体和与所述主体一体连接的端头，所述第一虚设电极指的端头位于其主体远离所述第一汇流条的一侧，所述第二虚设电极指的端头位于其主体远离所述第二汇流条的一侧；
所述第一汇流条包括至少一条第一子汇流条和至少一条第二子汇流条，所述第一子汇流条和所述第二子汇流条连接；
所述第二汇流条包括至少一条第三子汇流条和至少一条第四子汇流条，所述第三子汇流条与所述第四子汇流条连接；
所述第一间隙包括第一子间隙和第二子间隙，所述第二间隙包括第三子间隙和第四子间隙，所述第一子间隙以及所述第三子间隙位于所述第一子汇流条和所述第三子汇流条之间，所述第二子间隙以及所述第四子间隙位于所述第二子汇流条和所述第四子汇流条之间；
其中，各所述第一子间隙的排布方向与各所述第三子间隙的排布方向相同，各所述第二子间隙的排布方向与各所述第四子间隙的排布方向相同，所述第一子间隙的排布方向和所述第二子间隙的排布方向不同；每一所述端头包括凹槽，所述凹槽与所述端头共用一条对称轴，在沿所述第一电极指的长度方向上，所述凹槽的深度小于所述端头的长度；
在所述第一方向上，所述端头的宽度大于所述主体的宽度。
可选的，在所述第一方向上，所述端头的宽度与所述主体的宽度的比值包括1.2～1.8；
可选的，沿所述第一电极指的长度方向上，所述端头的长度与所述凹槽的深度的比值包括1.8～2.2。
可选的，各所述第一间隙排布的排布方向与第一方向的夹角的范围包括3～15°，各所述第二间隙排布的排布方向与所述第一方向的夹角的范围包括3～15°。
可选的，沿所述第一电极指的长度方向上，所述第一间隙的长度包括0.18～0.3μm；
所述第二间隙的长度包括0.18～0.3μm。
可选的，所述电极层还包括反射栅结构；
所述反射栅结构包括第三汇流条、第四汇流条和多条反射栅；
所述第三汇流条与所述第四汇流条平行设置；
所述反射栅的第一端与所述第三汇流条连接，所述反射栅的第二端与所述第四汇流条连接；
在第一方向上，所述反射栅结构位于所述叉指式换能器的两侧；
所述第三汇流条与所述反射栅垂直；
所述第三汇流条与所述第一方向平行。
可选的，本公开实施例提供的声表面波谐振器还包括能量陷阱层，所述能量陷阱层位于所述衬底和所述压电层之间；
第一介质层，所述第一介质层位于所述能量陷阱层和所述压电层之间；
第二介质层，所述第二介质层位于所述电极层远离所述压电层的一侧，并覆盖所述电极层。
可选的，所述第一汇流条包括至少两条第一子汇流条和至少两条第二子汇流 条，所述第一子汇流条和所述第二子汇流条交替连接；
所述第二汇流条包括至少两条第三子汇流条和至少两条第四子汇流条，所述第三子汇流条与所述第四子汇流条交替连接。
可选的，所述第一子汇流条连接所述第一电极指数量与所述第二子汇流条连接所述第一电极指的数量不相等。
第二方面，本公开实施例还提供了一种射频滤波器，该射频滤波器包括本公开任意实施例提供的所述声表面波谐振器。
本公开实施例提供一种声表面波谐振器，设置叉指式换能器中的第一汇流条包括至少一条第一子汇流条和至少一条第二子汇流条，第二汇流条包括至少一条第三子回流条和第四子汇流条，第一子汇流条与第二子汇流条连接且不平行，第三子汇流条与第四子汇流条连接且不平行，第一间隙排布位于第一电极指与第二虚设电极指之间，其排布方向与第一方向的夹角大于设定夹角，第二间隙排布位于第二电极指与第一虚设电极指之间，其排布方向与第一方向的夹角大于设定夹角，同时设置第一电极指、第二电极指、第一虚设电极指和第二虚设电极指均包括主体和与主体一体连接的端头，其中，每一端头包括一凹槽，在第一方向上，端头的宽度大于主体的宽度。
附图说明
图1为本公开实施例提供的一种声表面波谐振器的结构示意图；
图2为本公开实施例提供的一种叉指式换能器的结构示意图；
图3为本公开实施例提供的又一种叉指式换能器的结构示意图；
图4为现有的一种叉指式换能器的结构示意图；
图5为本公开实施例提供的又一种叉指式换能器的结构示意图；
图6为本公开实施例提供的一种声表面波谐振器的导纳幅值与现有的声表面波谐振器的导纳幅值的实测图；
图7为本公开实施例提供的一种声表面波谐振器导纳实部与现有的声表面波谐振器的导纳实部的实测图；
图8为本公开实施例提供的声表面波谐振器的史密斯曲线与现有的声表面波谐振器的史密斯曲线对比图；
图9为本公开实施例提供的声表面波谐振器的Q值与现有技的声表面波谐 振器的Q值的实测图；
图10为本公开实施例提供的又一种叉指式换能器的结构示意图；
图11为本公开实施例提供的又一种叉指式换能器的结构示意图；
图12为本公开实施例提供的又一种叉指式换能器的结构示意图。
具体实施方式
下面结合附图和实施例对本公开实施例作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本公开实施例，而非对本公开实施例的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本公开实施例相关的部分而非全部结构。
图1为本公开实施例提供的一种声表面波谐振器的结构示意图，图2为本公开实施例提供的一种叉指式换能器的结构示意图，图3为本公开实施例提供的又一种叉指式换能器的结构示意图，参考图1、图2和图3，该声表面波谐振器包括：衬底110；位于衬底110上的压电层120；电极层130，电极层130位于压电层120远离衬底110的一侧；电极层130包括叉指式换能器131，叉指式换能器131包括：第一汇流条10、第一电极指20和第一虚设电极指30，其中，第一电极指20和第一虚设电极指30交替排布连接至第一汇流条10；第二汇流条40、第二电极指50和第二虚设电极指60，其中，第二电极指50和第二虚设电极指60交替排布连接至第二汇流条40；第一电极指20和第二虚设电极指60相对设置，第一电极指20和第二虚设电极指60之间具有第一间隙70，第二电极指50和第一虚设电极指30相对设置，第二电极指50和第一虚设电极指30之间具有第二间隙80，其中，各第一间隙70排布的排布方向与第一方向x的夹角大于设定夹角，各第二间隙80排布的排布方向与第一方向x的夹角大于设定夹角，在与压电层120的平面平行的方向上，第一方向x与第一电极指20的长度方向垂直，其中，在第一电极指20的长度方向上，任意两个第一电极指20的长度相等，任意两个第一虚设电极指30的长度相等，任意两个第二电极指50的长度相等，任意两个第二虚设电极指60的长度相等，设定夹角大于0°；第一电极指20和第二电极指50均包括主体11和与主体11一体连接的端头12，第一电极指20的端头12位于第一电极指20的主体11远离第一汇流条10的一侧，第二电极指50的端头12位于第二电极指50的主体11远离第二汇流条40的一 侧；第一虚设电极指30和第二虚设电极指60均包括主体11和与主体11一体连接的端头12，第一虚设电极指30的端头12位于第一虚设电极指30的主体11远离第一汇流条10的一侧，第二虚设电极指60的端头12位于第二虚设电极指60的主体11远离第二汇流条40的一侧；第一汇流条10包括至少一条第一子汇流条21和至少一条第二子汇流条22，第一子汇流条21和第二子汇流条22连接；第二汇流条40包括至少一条第三子汇流条41和至少一条第四子汇流条42，第三子汇流条41与第四子汇流条42连接；第一间隙70包括第一子间隙71和第二子间隙72，第二间隙80包括第三子间隙81和第四子间隙82，第一子间隙71以及第三子间隙81位于第一子汇流条21和第三子汇流条41之间，第二子间隙72以及第四子间隙82位于第二子汇流条22和第四子汇流条42之间；其中，各第一子间隙71的排布方向与各第三子间隙81的排布方向相同，各第二子间隙72的排布方向与各第四子间隙82的排布方向相同，第一子间隙71的排布方向和第二子间隙72的排布方向不同；每一端头12包括凹槽13，凹槽13与端头12共用一条对称轴，在沿第一电极指20的长度方向上，凹槽13的深度c小于端头12的长度d；在第一方向x上，端头12的宽度a大于主体11的宽度b。
具体的，衬底110的材料可以为高阻硅，高阻硅可以为P型高阻硅或者N型高阻硅，高阻硅的电阻率大于2000Ω·cm，优选的，高阻硅的电阻率大于10000Ω·cm。压电层120的材料可以是钽酸锂和铌酸锂，其中钽酸锂切角可以是30°～50°，压电层120的厚度可以在300～1000nm范围内，在压电层120的表面通过电子束蒸发、等离子体、磁控溅射等方式沉积金属膜，从而形成电极层130，其中，沉积金属膜的材料可以是钛、铬、铜、银、铝等或者它们的组合。各第一间隙70排布的排布方向与第一方向x的夹角的范围可以是3～15°，各第二间隙80排布的排布方向与第一方向x的夹角的范围可以是3～15°，第一电极指20、第二电极指50、第一虚设电极指30和第二虚设电极指60均包括主体11和端头12，端头12的厚度与主体11的厚度相同。图2示例性的画出第一汇流条10包括一条第一子汇流条21和一条第二子汇流条22，第二汇流条40包括一条第三子汇流条41和一条第四子汇流条42。第一子间隙71排布的排布方向与第一子汇流条21的延伸方向平行，第二子间隙72排布的排布方向与第二子汇流条22 的延伸方向平行，第三子间隙81排布的排布方向与第三子汇流条41的延伸方向平行，第四子间隙82排布的排布方向与第四子汇流条42的延伸方向平行，设置第一汇流条10包括至少一条第一子汇流条21和至少一条第二子汇流条22，第二汇流条40包括至少一条第三子汇流条41和至少一条第四子汇流条42，且第一子汇流条21的延伸方向与第二子汇流条22的延伸方向不同，第三子汇流条41的延伸方向与第四子汇流条42的延伸方向不同，可以减小横向能量的泄露，从而提高谐振器的Q值，进而减小滤波器的插损。需要说明的是，第一子汇流条21的数量与第二子汇流条22的数量可以相等，也可以不相等，第三子汇流条41的数量与第四子汇流条42的数量可以相等，也可以不相等。图3示例性的画出端头12的结构放大图，参考图3，在第一方向x上，端头12的宽度a大于主体11的宽度b，在沿第一电极指的长度方向上，凹槽13的深度c小于端头12的长度d。
图4为现有的一种叉指式换能器的结构示意图，参考图4，图4中的第一长电极指111、第二长电极指113、第一短电极指112和第二短电极指114均不包括端头，图5为本公开实施例提供的又一种叉指式换能器的结构示意图，参考图5，以本实施例中的第一电极指20为例进行说明，在图4中的第一电极指远离第一汇流条的一侧添加两个长方体，其中，长方体与第一长电极指111部分共用，从而形成本实施例提供的第一电极指20，同样的，本实施例中的第二电极指、第一虚设电极指和第二虚设电极指也是通过同样的方式形成。在第一电极指的长度方向上，图3中的第一间隙的长度e小于图4中第一间隙的长度m。本实施例提供的叉指式换能器中的第一间隙的长度是指在第一电极指的长度方向上，相对设置的端头之间的最小距离，第一间隙的长度e如图3所示，同样的，第二间隙的长度与第一间隙的长度具有同样的测量方法。
图6为本公开实施例提供的一种声表面波谐振器的导纳幅值与现有的声表面波谐振器的导纳幅值的实测图，图7为本公开实施例提供的一种声表面波谐振器导纳实部与现有的声表面波谐振器的导纳实部的实测图，参考图6和图7，图6和图7中的实线均表示本实施例提供的声表面波谐振器的实测曲线，图6和图7中的虚线均表示现有的声表面波谐振器的实测曲线，从图6和图7中可以很明显的看出，现有的声表面波谐振器的导纳实部与频率的关系曲线中出现的横向 模式波纹，在实际应用中，产生多的横向模式波纹不适合射频滤波器的生成，本公开实施例提供的声表面波谐振器能够有效的抑制横向波纹，进而可以有效的明显降低谐振器的横向能量泄露。图8为本公开实施例提供的声表面波谐振器的史密斯曲线与现有的声表面波谐振器的史密斯曲线对比图，图8中的粗实线表示本实施例提供的声表面波谐振器的实测曲线，虚线表示现有的声表面波谐振器的实测曲线，从图8中可以看出，本实施例提供的声表面波谐振器的性能相比于传统技术中的声表面波谐振器的性能更加优越。图9为本公开实施例提供的声表面波谐振器的Q值与现有技的声表面波谐振器的Q值的实测图，图9中的实线表示本实施例提供的声表面波谐振器的实测曲线，虚线表示现有的声表面波谐振器的实测曲线，图9中的实线和虚线均是在1.6μm的波长下形成的，可以看出，在相同波长下，本实施例提供的声表面波谐振器的Q值更高，特别是频率越高，效果越明显。需要说明的是，图6～图9中现有的声表面波谐振器的结构为图4所示的结构。
本公开实施例提供一种声表面波谐振器，设置叉指式换能器中的第一汇流条包括至少一条第一子汇流条和至少一条第二子汇流条，第二汇流条包括至少一条第三子回流条和第四子汇流条，第一子汇流条与第二子汇流条连接且不平行，第三子汇流条与第四子汇流条连接且不平行，第一电极指与第二虚设电极指之间的第一间隙排布的排布方向与第一方向的夹角大于设定夹角，第二电极指与第一虚设电极指之间的第二间隙排布的排布方向与第一方向的夹角大于设定夹角，同时设置第一电极指、第二电极指、第一虚设电极指和第二虚设电极指均包括主体和与主体一体连接的端头，其中，每一端头包括一凹槽，在第一方向上，端头的宽度大于主体的宽度，与传统的声表面波谐振器相比，本实施例提供的声表面波谐振器可以有效减小横向能量的泄露，从而提高谐振器的Q值，进而减小射频滤波器的插损。
可选的，在第一方向上，端头的宽度与主体的宽度的比值包括1.2～1.8。
可选的，第一电极指的长度方向上，端头的长度与凹槽的深度的比值包括1.8～2.2。
具体的，将端头的宽度设置为主体的宽度的1.2倍～1.8倍，以及在沿第一电极指的长度方向上，设置端头的长度为叉指式换能器波长的0.3～0.7倍，端头的 长度与凹槽的深度的比值包括1.8～2.2，可以进一步使端头阻挡声表面波中横向能量泄露，更好的抑制声表面波中的杂波，进一步提高声表面波谐振器的Q值。
可选的，各所述第一间隙排布的排布方向与第一方向的夹角的范围包括3～15°，各所述第二间隙排布的排布方向与所述第一方向的夹角的范围包括3～15°。
具体的，在第一电极指的长度方向上，任意两个第一电极指的长度相等，任意两个第一虚设电极指的长度相等，任意两个第二电极指的长度相等，任意两个第二虚设电极指的长度相等，则第一子汇流条的延伸方向与第一子间隙排布的的排布方向相同，第二汇子流条的延伸方向与第二子间隙排布的排布方向相同，第三子汇流条的延伸方向与第三子间隙排布的的排布方向相同，第四汇子流条的延伸方向与第四子间隙排布的排布方向相同，设置各所述第一间隙排布的排布方向与第一方向的夹角的范围包括3～15°，各所述第二间隙排布的排布方向与所述第一方向的夹角的范围包括3～15°，可以使本实施例提供的声表面波谐振器更好的抑制声表面波中的杂波，进一步提高声表面波谐振器的Q值。
可选的，沿第一电极指的长度方向上，第一间隙的长度包括0.18～0.3μm；第二间隙的长度包括0.18～0.3μm。
具体的，设置在第一间隙的长度包括0.18～0.3μm，第二间隙的长度包括0.18～0.3μm可以进一步使端头阻挡声表面波中横向能量泄露，更好的抑制声表面波中的杂波，进一步提高声表面波谐振器的Q值。
可选的，图10为本公开实施例提供的又一种叉指式换能器的结构示意图，参考图10，电极层还包括反射栅结构132；反射栅结构132包括第三汇流条90、第四汇流条91和多条反射栅92；第三汇流条90与第四汇流条91平行设置；反射栅92的第一端与第三汇流条90连接，反射栅92的第二端与第四汇流条91连接；在第一方向x上，反射栅结构132位于叉指式换能器131的两侧；第三汇流条90与反射栅92垂直且第三汇流条90与第一方向x平行。
具体的，反射栅结构132可以反射声表面波的能量，将能量集中在叉指式换能器131中，本公开实施例中始终设置反射栅92与第一电极指、第二电极指、第一虚设电极指和第二虚设电极指平行，进一步保证反射栅结构132将反射的声表面波的能量集中到叉指式换能器131中，进一步提高声表面波谐振器的Q值,反射栅的条数可以是二十根。
可选的，继续参考图1，该声表面波谐振器还包括能量陷阱层140，能量陷阱层140位于衬底110和压电层120之间；第一介质层150，第一介质层150位于能量陷阱层140和压电层120之间；第二介质层160，第二介质层160位于电极层130远离压电120层的一侧，并覆盖电极层130。
具体的，在衬底110上制备一层能量陷阱层140，能量陷阱层140的材料可以为多晶硅，能量陷阱层140的设置可以减小电荷的积累，进一步提升声表面波谐振器的Q值。在能量陷阱层140远离衬底110的一侧，使用等离子体增强化学气相沉积的方式或者硅的热氧化方式生长一层低声速的二氧化硅，从而形成第一介质层150，采用化学机械平坦化处理，使第一介质层150的厚度值最终控制在300～800nm的范围内，第一介质层150可以进一步改善温漂系数。第二介质层160作为声表面波面波谐振器的钝化层和调频层，第二介质层160的材料可以为二氧化硅或氮化硅，第二介质层160覆盖电极层130。衬底110、能量陷阱层140和第一介质层150构成复合多层衬底，本公开实施例中的复合多层衬底可以使声表面波谐振器和射频滤波器实现低插损、通带平滑、高Q值以及出色的低频率温度等特性。
可选的，图11为本公开实施例提供的又一种叉指式换能器的结构示意图，参考图11，第一汇流条10包括至少两条第一子汇流条21和至少两条第二子汇流条22，第一子汇流条21和第二子汇流条22交替连接；第二汇流条40包括至少两条第三子汇流条41和至少两条第四子汇流条42，第三子汇流条41与第四子汇流条42交替连接。
具体的，包括两条及两条以上的第一子汇流21、第二子汇流条22、第三子汇流条41和第四子汇流条42的声表面波谐振器也可以减小横向能量的泄露，从而提高谐振器的Q值，进而减小滤波器的插损。
可选的，图12为本公开实施例提供的又一种叉指式换能器的结构示意图，参考图12，第一子汇流条21连接第一电极指20数量与第二子汇流条22连接第一电极指20的数量不相等。
具体的，参考图12，第一子汇流条21连接的第一电极指20的数量大于第二子汇流条22连接第一电极指20的数量，第一子汇流条21与第一方向x的夹角大小也可以与第二子汇流条22与第一方向x的夹角大小不同。设置第一子汇流 条21连接第一电极指20数量与第二子汇流条22连接第一电极指20的数量不相等，也可以减小横向能量的泄露，从而提高谐振器的Q值，进而减小滤波器的插损。
本公开实施例还提供了一种射频滤波器，该射频滤波器包括本公开任意实施例提供的声表面波谐振器。
本公开实施例提供的射频滤波器与本公开任意实施例提供的声表面波谐振器具有相应的有益效果，未在本实施例详尽的技术细节，详尽本公开任意实施例提供的声表面波谐振器。
注意，上述仅为本公开实施例的较佳实施例及所运用技术原理。本领域技术人员会理解，本公开实施例不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本公开实施例的保护范围。因此，虽然通过以上实施例对本公开实施例进行了较为详细的说明，但是本公开实施例不仅仅限于以上实施例，在不脱离本公开实施例构思的情况下，还可以包括更多其他等效实施例，而本公开实施例的范围由所附的权利要求范围决定。

Claims (15)

  1. 一种声表面波谐振器，其中包括：
    衬底；
    位于所述衬底上的压电层；
    电极层，所述电极层位于所述压电层远离所述衬底的一侧；
    所述电极层包括叉指式换能器，所述叉指式换能器包括：第一汇流条、第一电极指和第一虚设电极指，其中，所述第一电极指和所述第一虚设电极指交替排布连接至所述第一汇流条；第二汇流条、第二电极指和第二虚设电极指，其中，所述第二电极指和所述第二虚设电极指交替排布连接至所述第二汇流条；所述第一电极指和所述第二虚设电极指相对设置，所述第一电极指和所述第二虚设电极指之间具有第一间隙，所述第二电极指和所述第一虚设电极指相对设置，所述第二电极指和所述第一虚设电极指之间具有第二间隙，其中，各所述第一间隙排布的排布方向与第一方向的夹角大于设定夹角，各所述第二间隙排布的排布方向与所述第一方向的夹角大于设定夹角，在与所述压电层的平面平行的方向上，所述第一方向与所述第一电极指的长度方向垂直，其中，在所述第一电极指的长度方向上，任意两个所述第一电极指的长度相等，任意两个所述第一虚设电极指的长度相等，任意两个所述第二电极指的长度相等，任意两个所述第二虚设电极指的长度相等，所述设定夹角大于0°；
    所述第一电极指和所述第二电极指均包括主体和与所述主体一体连接的端头，所述第一电极指的所述端头位于其主体远离所述第一汇流条的一侧，所述第二电极指的所述端头位于其主体远离所述第二汇流条的一侧；
    所述第一虚设电极指和所述第二虚设电极指均包括主体和与所述主体一体连接的端头，所述第一虚设电极指的所述端头位于其主体远离所述第一汇流条的一侧，所述第二虚设电极指的所述端头位于其主体远离所述第二汇流条的一侧；
    所述第一汇流条包括至少一条第一子汇流条和至少一条第二子汇流条，所述第一子汇流条和所述第二子汇流条连接；
    所述第二汇流条包括至少一条第三子汇流条和至少一条第四子汇流条，所述第三子汇流条与所述第四子汇流条连接；
    所述第一间隙包括第一子间隙和第二子间隙，所述第二间隙包括第三子间隙和第四子间隙，所述第一子间隙以及所述第三子间隙位于所述第一子汇流条和所述第三子汇流条之间，所述第二子间隙以及所述第四子间隙位于所述第二子汇流条和所述第四子汇流条之间；
    其中，各所述第一子间隙的排布方向与各所述第三子间隙的排布方向相同，各所述第二子间隙的排布方向与各所述第四子间隙的排布方向相同，所述第一子间隙的排布方向和所述第二子间隙的排布方向不同；每一所述端头包括凹槽，所述凹槽与所述端头共用一条对称轴，在沿所述第一电极指的长度方向上，所述凹槽的深度小于所述端头的长度；
    在所述第一方向上，所述端头的宽度大于所述主体的宽度。
  2. 根据权利要求1所述的声表面波谐振器，其中，在所述第一方向上，所述端头的宽度与所述主体的宽度的比值包括1.2～1.8。
  3. 根据权利要求1所述的声表面波谐振器，其中，沿所述第一电极指的长度方向上，所述端头的长度与所述凹槽的深度的比值包括1.8～2.2。
  4. 根据权利要求1所述的谐振器，其中，各所述第一间隙排布的排布方向与第一方向的夹角的范围包括3～15°。
  5. 根据权利要求4所述的谐振器，其中，各所述第二间隙排布的排布方向与所述第一方向的夹角的范围包括3～15°。
  6. 根据权利要求1所述的谐振器，其中，沿所述第一电极指的长度方向上，所述第一间隙的长度包括0.18～0.3μm。
  7. 根据权利要求6所述的谐振器，其中，沿所述第一电极指的长度方向上，所述第二间隙的长度包括0.18～0.3μm。
  8. 根据权利要求1所述的声表面波谐振器，其中，所述电极层还包括反射栅结构；
    在第一方向上，所述反射栅结构位于所述叉指式换能器的两侧。
  9. 根据权利要求8所述的声表面波谐振器，其中，所述反射栅结构还包括第三汇流条、第四汇流条和多条反射栅；
    所述第三汇流条与所述第四汇流条平行设置；
    所述反射栅的第一端与所述第三汇流条连接，所述反射栅的第二端与所述第 四汇流条连接；
    所述第三汇流条与所述反射栅垂直；
    所述第三汇流条与所述第一方向平行。
  10. 根据权利要求1所述的声表面波谐振器，其中，还包括能量陷阱层，所述能量陷阱层位于所述衬底和所述压电层之间；
    第一介质层，所述第一介质层位于所述能量陷阱层和所述压电层之间；
    第二介质层，所述第二介质层位于所述电极层远离所述压电层的一侧，并覆盖所述电极层。
  11. 根据权利要求1所述的声表面波谐振器，其中，所述第一汇流条包括至少两条第一子汇流条和至少两条第二子汇流条，所述第一子汇流条和所述第二子汇流条交替连接。
  12. 根据权利要求11所述的声表面波谐振器，其中，所述第二汇流条包括至少两条第三子汇流条和至少两条第四子汇流条，所述第三子汇流条与所述第四子汇流条交替连接。
  13. 根据权利要求1或11或12所述的声表面波谐振器，其中，所述第一子汇流条连接所述第一电极指数量与所述第二子汇流条连接所述第一电极指的数量不相等。
  14. 根据权利要求1所述的声表面波谐振器，其中，所述压电层的厚度包括300nm～1000nm。
  15. 一种射频滤波器，其中，包括权利要求1-14任一项所述的声表面波谐振器。
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