WO2023045052A1 - 高通量薄膜沉积设备及薄膜沉积方法 - Google Patents

高通量薄膜沉积设备及薄膜沉积方法 Download PDF

Info

Publication number
WO2023045052A1
WO2023045052A1 PCT/CN2021/130328 CN2021130328W WO2023045052A1 WO 2023045052 A1 WO2023045052 A1 WO 2023045052A1 CN 2021130328 W CN2021130328 W CN 2021130328W WO 2023045052 A1 WO2023045052 A1 WO 2023045052A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
thin film
film deposition
target
throughput
Prior art date
Application number
PCT/CN2021/130328
Other languages
English (en)
French (fr)
Inventor
李卫民
吴挺俊
陈玲丽
朱雷
俞文杰
Original Assignee
上海集成电路材料研究院有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海集成电路材料研究院有限公司 filed Critical 上海集成电路材料研究院有限公司
Publication of WO2023045052A1 publication Critical patent/WO2023045052A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates

Definitions

  • the invention belongs to the technical field of gas phase deposition, and in particular relates to a high-throughput thin film deposition equipment and a thin film deposition method.
  • the existing physical vapor deposition method needs to realize the deposition of thin films in different regions on a single wafer, which is usually achieved by blocking different regions with baffles.
  • the addition of the baffle will greatly affect the movement of the sputtered particles.
  • the particles may be deposited on the baffle and pose a threat to the subsequent deposition process, such as causing some adverse effects on the deposited film, such as causing a decrease in the sputtering rate, Cause pollution, affect the uniformity of the film, etc.
  • the existing Qualcomm thin film deposition equipment has problems such as complex structure, high cost, difficult heating, many moving parts and low work efficiency.
  • the purpose of the present invention is to provide a high-throughput thin film deposition equipment and a thin film deposition method, which are used to solve the problems of complex structure, high cost, and difficult heating in the high-throughput thin film deposition equipment in the prior art.
  • many moving parts and low work efficiency, and the use of baffles to achieve thin film deposition in different regions on a single wafer will affect the movement of particles and bring adverse effects on thin film deposition.
  • the present invention provides a high-throughput thin film deposition equipment, which includes: a chamber, a stage, a target gun, a first gas supply system and a second gas supply system system; the cavity includes a sputtering part and a deposition part communicated with each other, the sputtering part is located above the deposition part, and the horizontal surface area of the sputtering part is smaller than the horizontal surface area of the deposition part; the target The gun is located in the sputtering part, and the target gun is provided with a target; the stage is located in the deposition part, and is used to carry the substrate to be deposited, and the substrate has a region to be deposited.
  • the area to be deposited is located directly below the target;
  • the first gas supply system includes a first gas pipeline and a first gas shower head, and one end of the first gas pipeline is connected to a first gas source The other end extends to communicate with the first gas shower head in the sputtering part, the first gas shower head is plural, and the plurality of first gas shower heads are located at the target gun Circumferentially, to supply the first gas toward the direction of the target gun, the first gas includes an inert gas;
  • the second gas supply system includes a second gas pipeline, and one end of the second gas pipeline is connected to the second gas The source is connected, and the other end extends into the deposition part and above the carrier, so as to supply the second gas to the deposition part, and the second gas includes reaction gas and/or protection gas.
  • a mass flow meter is arranged on the first gas pipeline and/or the second gas pipeline.
  • first gas shower heads there are two first gas shower heads, and the two first gas shower heads are symmetrically arranged on opposite sides of the target gun.
  • the included angle between the spray surface of the first gas shower head and the horizontal plane is an acute angle.
  • the high-throughput thin film deposition equipment further includes a rotating device connected to the stage to drive the stage to rotate so that different regions to be deposited on the substrate are located on the target directly below the material.
  • the high-throughput film deposition equipment further includes an adjustment device connected to the target gun for adjusting the height and/or angle of the target gun.
  • the high-throughput thin film deposition equipment further includes a heating device located in the deposition part.
  • the high-throughput thin film deposition equipment further includes a real-time measurement device, located in the deposition part, for characterizing the thin film deposited on the surface of the substrate, including elemental composition, film thickness and microstructure.
  • the center point of the target gun is not on the same vertical line as the center point of the carrier.
  • the present invention also provides a thin film deposition method.
  • the thin film deposition method is performed according to the high-throughput thin film deposition equipment described in any of the above schemes.
  • the thin film deposition method includes placing a substrate on a stage, and making the substrate The area to be deposited at the bottom is located directly below the target, and during the sputtering process, by adjusting the position of the substrate, the step of film deposition is performed on different areas to be deposited on the substrate.
  • the high-throughput thin film deposition equipment and thin film deposition method of the present invention have the following beneficial effects: the high-throughput thin film deposition equipment of the present invention has simple structure, few horizontally moving parts, low cost, and no need for baffles; The sputtering position can be changed without moving the substrate horizontally, and the substrate can be heated. It is easy to integrate online testing devices and other external equipment, and can avoid baffles while achieving high-throughput co-sputtering. The adverse effects on the sputtering rate and film uniformity during the sputtering process can help improve deposition efficiency and yield.
  • FIG. 1 shows an exemplary structural diagram of a high-throughput thin film deposition device provided in an embodiment of the present invention.
  • the present invention provides a kind of high-throughput thin film deposition equipment, described high-flux thin film deposition equipment comprises cavity, stage 44, target gun 41, first gas supply system 45 and second gas supply system 46; the cavity includes a sputtering part 421 (which can also be defined as a vertical part) and a deposition part 422 (which can also be defined as a horizontal part) which communicate with each other, and the sputtering part 421 is located above the deposition part 422,
  • the horizontal surface area of the sputtering portion 421 is smaller than the horizontal surface area of the deposition portion 422, and is usually also smaller than the surface area of the stage (for example, the horizontal surface area of the sputtering portion 421 is 1/2 of the horizontal surface area of the deposition portion 422 hereinafter), the sputtering portion 421 is an elongated structure (generally the lateral dimension of the sputtering portion 421 is smaller than the longitudinal dimension) and the deposition portion 422 is a flat structure (the
  • the area of the deposition area is usually smaller than the surface area of the substrate.
  • the area to be deposited can be an annular area on the substrate (the center point of the annular area can be consistent with the center point of the substrate) or a fan-shaped area on the substrate or other Arbitrary shapes, the area to be deposited on the substrate can be single or multiple, especially in the case of multiple areas to be deposited on the substrate, it is especially suitable for deposition using the high-throughput thin film deposition equipment provided by the present invention.
  • the first gas supply system 45 includes a first gas pipeline 452 and a first gas shower head 453, and the first gas pipeline 452
  • One end communicates with the first gas source (not shown), and the other end extends to communicate with the first gas shower head 453 in the sputtering part 421, the first gas shower head 453 is plural,
  • the first gas includes an inert gas,
  • the argon flow ejected by the plurality of first gas shower heads 453 is directed towards the particles sputtered by the target, forming a similar argon flow channel, so that the particles on the target can be transported by the argon flow.
  • the second gas supply system 46 includes a second gas pipeline 462, and one end of the second gas pipeline 462 is connected to a second gas source (not shown), the other end extends into the deposition part 422 and extends above the stage 44, so as to supply the second gas to the deposition part 422, especially to the region to be deposited of the substrate , the second gas includes a reactive gas and/or a protective gas, the reactive gas and the protective gas can be the same gas, such as nitrogen; when the second gas is a reactive gas, the reactive gas can be combined with the target gas Particles react to form a thin film on the area to be deposited on the substrate; and if the second gas is used as a protective gas, it can form a good protection for the substrate and avoid contamination of the substrate.
  • the selected reaction gas is nitrogen
  • Nitrogen can play a role in participating in the sputtering reaction and protecting the substrate at the same time. Since the horizontal surface area of the sputtering portion 421 is smaller than the horizontal surface area of the deposition portion 422, the substrate will not be completely exposed under the sputtering portion 421, and only the region to be deposited can be located under the sputtering portion, so there is no need to use a baffle
  • a smaller sputtering and deposition area is defined by the sputtering part through the ingeniously arranged cavity structure, and only by moving the substrate, That is, the relative positions of different regions of the substrate and the sputtering part 421 can be changed (only the region directly below the sputtering part on the substrate can deposit a thin film), and the particles sputtered from the target can be guided to the substrate by means of an inert gas flow
  • an inert gas flow The
  • the working principle of the high-throughput thin film deposition equipment of the present invention is as follows: firstly, the substrate is adjusted, the sputtering part is aligned with the first area to be deposited on the substrate, and the sputtering device is started to generate particles on the target material, so as to Thin film deposition is carried out in the first deposition area; then, the position of the substrate is changed, such as by rotating the stage so that the substrate is rotated horizontally, so that the sputtering part is aligned with the second deposition area of the substrate, and the target is used to generate particles to Thin film deposition is performed in the second deposition area, and the above steps are repeated until the required thin film deposition is completed.
  • the high-throughput thin film deposition of the present invention has the advantages of simple equipment structure, less horizontally moving parts, low cost, and no need for baffles.
  • the adverse effect on sputtering rate and film uniformity caused by the process helps to improve sputtering efficiency and yield.
  • the horizontal distance between the first gas shower head 453 and the target is usually less than 20 cm, such as 3-10 cm; and the horizontal distance between the first gas shower head 453 and the cavity wall of the sputtering part 421 is also preferably less than 20 cm, such as 3-10 cm, to make the structure of the sputtering part 421 as compact as possible, so that the sputtering deposition area of the substrate can be adjusted more flexibly.
  • the first gas pipeline 452 and/or the second gas pipeline 462 is provided with a mass flow meter to measure the corresponding gas flow, and each gas pipeline is usually also provided with a control valve, according to It is necessary to adjust the supply flow rate of the corresponding gas; the mass flow meter 451 on the first gas pipeline 452 and the mass flow meter 461 on the second gas pipeline 462, as well as the control valve are usually arranged outside the cavity.
  • first gas shower heads 453 there are two first gas shower heads 453, and the two first gas shower heads 453 are symmetrically arranged on opposite sides of the target gun 41 (which are also opposite sides of the target material at the same time)
  • the spray surface of the first gas shower head 453 can be at the same height as the sputter surface of the target or slightly higher than the sputter surface of the target), and the spray surface of the first gas shower head 453 can be Arc surface structure, so the two first gas shower heads 453 are symmetrically arranged on the opposite sides of the target gun 41 to form a column-like gas flow channel, and the particles on the target move vertically down to the substrate along the gas flow channel.
  • the area to be deposited at the bottom is deposited to form a film.
  • the angle between the spraying surface of the first gas shower head 453 and the horizontal plane is an acute angle, for example, between 30 degrees and 60 degrees, that is, the spraying surface of the first gas shower head is inclined. Therefore, the spray surfaces of the plurality of first gas shower heads 453 form a funnel-like gas flow channel, so as to better guide the particles of the target material to move to the substrate to be deposited.
  • the high-throughput thin film deposition equipment further includes a rotating device connected to the stage 44 to drive the stage 44 to rotate, so that different areas to be deposited on the substrate 40 Located right below the target, for example, the rotating device may include a rotating shaft 43 .
  • the high-throughput film deposition equipment also includes an adjustment device (not shown), connected to the target gun 41, for adjusting the height and/or angle of the target gun 41 (also for adjusting the target height and/or angle) to help improve deposition uniformity.
  • an adjustment device (not shown), connected to the target gun 41, for adjusting the height and/or angle of the target gun 41 (also for adjusting the target height and/or angle) to help improve deposition uniformity.
  • the high-throughput thin film deposition equipment further includes a heating device located in the deposition part 422, such as on the surface of the carrier 44 or in the carrier 44, the heating device may be a resistance heater, And the power line connected with the heating heater can be arranged in the aforementioned rotating shaft 43 .
  • the high-throughput thin film deposition equipment also includes a real-time measurement device (not shown), located in the deposition part 422, used to perform elemental composition, film thickness and microscopic measurement of the film deposited on the surface of the substrate. Characterization of the structure.
  • the center point of the target gun 41 is not on the same vertical line as the center point of the carrier 44, that is, the center point of the target material is not on the same vertical line as the center point of the substrate. It is more convenient to adjust the relative position of the deposition area of the substrate and the target.
  • the present invention also provides a thin film deposition method.
  • the thin film deposition method is carried out according to the high-throughput thin film deposition equipment described in any of the above schemes. Therefore, for more introductions to the high-throughput thin film deposition equipment, please refer to the aforementioned The content is not repeated for the sake of brevity.
  • the thin film deposition method provided by the present invention includes placing the substrate on the stage 44, and making the area to be deposited of the substrate located directly below the target (that is, in the deposition section directly below the aforementioned sputtering section), and a plurality of first
  • the inert gas flow ejected from a gas shower head is directed towards the particles sputtered by the target, so that the particles sputtered by the target are guided to the area to be deposited on the substrate by means of the inert gas flow to form a thin film on the area to be deposited.
  • the step of film deposition on different regions to be deposited on the substrate can be realized .
  • the height and/or angle of the target can also be adjusted according to different needs.
  • the present invention provides a high-throughput thin film deposition equipment and thin film deposition method.
  • the high-throughput film deposition equipment includes: a chamber, a stage, a target gun, a first gas supply system, and a second gas supply system;
  • the chamber includes a sputtering part and a deposition part that communicate with each other, and the sputtering The part is located above the deposition part, and the horizontal surface area of the sputtering part is smaller than the horizontal surface area of the deposition part;
  • the target gun is located in the sputtering part, and a target is arranged on the target gun;
  • the stage is located in the deposition part, and is used to carry the substrate to be deposited.
  • the substrate has a region to be deposited.
  • the region to be deposited is located directly below the target;
  • the first gas supply system includes The first gas pipeline and the first gas shower head, one end of the first gas pipeline communicates with the first gas source, and the other end extends to communicate with the first gas shower head in the sputtering part, so There are a plurality of first gas shower heads, and the plurality of first gas shower heads are located in the circumferential direction of the target gun to supply the first gas toward the direction of the target gun, and the first gas includes an inert gas
  • the second gas supply system includes a second gas pipeline, one end of the second gas pipeline communicates with the second gas source, and the other end extends into the deposition part and extends above the stage, To supply the second gas to the deposition part, the second gas includes a reactive gas and/or a protective gas.
  • the high-throughput thin film deposition equipment of the present invention has simple structure, few horizontally moving parts, low cost and no need to use baffles; the substrate on the working platform can not move horizontally but only adjust the sputtering of the substrate through the rotation of the stage.
  • Sputtering area, and the present invention can also realize the heating of the substrate, and is easy to integrate on-line testing device and other external equipment, while realizing high-throughput co-sputtering, avoiding the sputtering process in the case of a baffle
  • Detrimental effects on sputtering rate and film uniformity can help improve deposition efficiency and yield.
  • the high-throughput thin film deposition equipment of the present invention can not only be used for depositing thin films of a single element, but also is especially suitable for depositing multi-element thin films, and has great commercial value.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种高通量薄膜沉积设备及薄膜沉积方法。设备包括腔体、载台(44)、靶枪(41)、第一气体供给系统(45)及第二气体供给系统(46)；腔体包括相互连通的溅射部(421)和沉积部(422)，溅射部(421)位于沉积部(422)的上方，溅射部(421)的水平表面积小于沉积部(422)的水平表面积；靶枪(41)位于溅射部(421)内，靶枪(41)上设置有靶材；载台(44)用于承载待沉积的衬底(40)，衬底(40)上具有待沉积区，沉积过程中，待沉积区位于靶枪(41)的正下方；第一气体供给系统(45)包括第一气体管路(452)和第一气体喷淋头(453)，第一气体喷淋头(453)为复数个；第二气体供给系统(46)包括第二气体管路(462)，一端与第二气体源相连通，另一端延伸到沉积部(422)内，以向沉积部(422)供应第二气体，第二气体包括反应气体和/或保护气体。该设备有助于提高沉积效率和薄膜均匀性。

Description

高通量薄膜沉积设备及薄膜沉积方法 技术领域
本发明属于气相沉积技术领域，特别是涉及一种高通量薄膜沉积设备及薄膜沉积方法。
背景技术
传统的物理气相沉积在一次实验中只能使用一个溅射条件，包括气体流量、反应腔体压力、衬底的温度等。因此当需要对溅射工艺窗口(即设定溅射参数)进行研发时需要开展几十甚至成百上千次实验，需要花费大量的时间成本和物质成本。因此，采用高通量实验设备是必要的。高通量薄膜沉积设备用于制造材料薄膜，可以在短时间内实现大量的溅射条件组合，根据应用的需求选出最优工艺窗口。另外，现有的物理气相沉积方法要在单个晶圆上实现不同区域的薄膜的沉积，通常是通过挡板对不同区域的遮挡的技术来实现。然而挡板的加入会极大程度影响溅射出来粒子的运动，粒子可能沉积在挡板上而给后续沉积工艺带来威胁，比如对沉积的薄膜造成一些不良影响，如导致溅射速率下降、导致污染、影响薄膜的均匀性等。此外，现有的高通薄膜沉积设备存在结构复杂、成本高、不易加热、移动部件多及工作效率低等问题。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种高通量薄膜沉积设备及薄膜沉积方法，用于解决现有技术中的高通薄膜沉积设备存在结构复杂、成本高、不易加热、移动部件多及工作效率低，以及采用挡板实现单个晶圆上不同区域的薄膜沉积会影响粒子的运动而给薄膜沉积带来不良影响等问题。
为实现上述目的及其他相关目的，本发明提供一种高通量薄膜沉积设备，所述高通量薄膜沉积设备包括：腔体、载台、靶枪、第一气体供给系统及第二气体供给系统；所述腔体包括相互连通的溅射部和沉积部，所述溅射部位于所述沉积部的上方，所述溅射部的水平表面积小于所述沉积部的水平表面积；所述靶枪位于所述溅射部内，所述靶枪上设置有靶材；所述载台位于所述沉积部内，用于承载待沉积的衬底，所述衬底上具有待沉积区，沉积过程中，所述待沉积区位于所述靶材的正下方；所述第一气体供给系统包括第一气体管路和第一气体喷淋头，所述第一气体管路一端与第一气体源相连通，另一端延伸至与所述溅射部内的第一气体喷淋头相连通，所述第一气体喷淋头为复数个，复数个所述第一气体喷淋头位于所述靶 枪的周向上，以朝所述靶枪方向供应第一气体，所述第一气体包括惰性气体；所述第二气体供给系统包括第二气体管路，所述第二气体管路一端与第二气体源相连通，另一端延伸到所述沉积部内，且延伸到所述载台的上方，以向所述沉积部供应第二气体，第二气体包括反应气体和/或保护气体。
可选地，所述第一气体管路和/或第二气体管路上设置有质量流量计。
可选地，所述第一气体喷淋头为两个，两个所述第一气体喷淋头对称设置于所述靶枪的相对两侧。
可选地，所述第一气体喷淋头的喷淋面与水平面的夹角为锐角。
可选地，所述高通量薄膜沉积设备还包括旋转装置，与所述载台相连接，以驱动所述载台旋转，以使所述衬底上的不同的待沉积区位于所述靶材的正下方。
可选地，所述高通量薄膜沉积设备还包括调节装置，与所述靶枪相连接，用于调节所述靶枪的高度和/或角度。
可选地，所述高通量薄膜沉积设备还包括加热装置，位于所述沉积部内。
可选地，所述高通量薄膜沉积设备还包括实时测量装置，位于所述沉积部内，用于对所述衬底表面沉积的薄膜进行包括元素成分、薄膜厚度和微观结构的表征。
可选地，所述靶枪的中心点与所述载台的中心点不在同一垂线上。
本发明还提供一种薄膜沉积方法，所述薄膜沉积方法依上述任一方案中所述的高通量薄膜沉积设备进行，所述薄膜沉积方法包括将衬底放置于载台上，并使衬底的待沉积区位于靶材的正下方，在溅射过程中，通过调整衬底位置，以对衬底的不同的待沉积区进行薄膜沉积的步骤。
如上所述，本发明的高通量薄膜沉积设备及薄膜沉积方法具有以下有益效果：本发明的高通量薄膜沉积设备结构简单、水平移动部件少、成本较低、无需挡板；位于工作平台上的衬底可以不水平移动即可改变溅射位置，且可以实现对衬底进行加热，易于集成在线测试装置及其他外部装备，可以在实现高通量共溅射的同时，避免有挡板的情况下在溅射过程中对溅射速率和薄膜均匀性造成的不良影响，有助于提高沉积效率和良率。
附图说明
图1显示为本发明实施例中提供的高通量薄膜沉积设备的例示性结构示意图。
元件标号说明
40  衬底
41  靶枪
421 溅射部
422 沉积部
43  旋转轴
44  载台
45  第一气体供给系统
451 质量流量计
452 第一气体管路
453 第一气体喷淋头
46  第二气体供给系统
461 质量流量计
462 第二气体管路
具体实施方式
以下由特定的具体实施例说明本发明的实施方式，熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。
请参阅图1。须知，本说明书所附图式所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供熟悉此技术的人士了解与阅读，并非用以限定本发明可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时，本说明书中所引用的如“上”、“下”、“左”、“右”、“中间”及“一”等的用语，亦仅为便于叙述的明了，而非用以限定本发明可实施的范围，其相对关系的改变或调整，在无实质变更技术内容下，当亦视为本发明可实施的范畴。
如图1所示，本发明提供一种高通量薄膜沉积设备，所述高通量薄膜沉积设备包括腔体、载台44、靶枪41、第一气体供给系统45及第二气体供给系统46；所述腔体包括相互连通的溅射部421(也可以定义为垂直部)和沉积部422(也可以定义为水平部)，所述溅射部421位于所述沉积部422的上方，所述溅射部421的水平表面积小于所述沉积部422的水平表面积，且通常也小于载台的表面积(比如溅射部421的水平表面积为所述沉积部422的水平表面积的二分之一以下)，所述溅射部421为细长结构(通常溅射部421的横向尺寸小于纵向 尺寸)而所述沉积部422为扁平结构(沉积部422的横向尺寸大于纵向尺寸)，所述溅射部421垂直位于所述沉积部422的上方，以和所述沉积部422构成横截面类似⊥形或L形结构的腔体；所述靶枪41位于所述溅射部421内，所述靶枪41上设置有靶材，所述靶材用于提供溅射沉积所需的粒子，所述靶材可以为单一材质或为复合靶；所述载台44位于所述沉积部422内，用于承载待沉积的衬底40，所述衬底40包括但不限于晶圆，所述衬底40上具有待沉积区，衬底40的表面积通常与载台44的表面积基本相同，而待沉积区的面积通常小于衬底的表面积，比如待沉积区可为衬底上的一环形区域(该环形区域的中心点可和衬底的中心点一致)或衬底上的一扇形区或其他任意形状，衬底上的待沉积区可以为单个或多个，尤其是在衬底的待沉积区为多个的情况下，尤其适于采用本发明提供的高通量薄膜沉积设备进行沉积。沉积过程中，所述待沉积区位于所述靶材的正下方；所述第一气体供给系统45包括第一气体管路452和第一气体喷淋头453，所述第一气体管路452一端与第一气体源(未示出)相连通，另一端延伸至与所述溅射部421内的第一气体喷淋头453相连通，所述第一气体喷淋头453为复数个，比如为2个或以上，复数个所述第一气体喷淋头453位于所述靶枪41的周向上，以朝所述靶枪41方向供应第一气体，所述第一气体包括惰性气体，比如包括但不限于氩气，复数个第一气体喷淋头453喷出的氩气流均朝向靶材溅射出的粒子，形成类似一条氩气流道，以通过氩气流将所述靶材上的粒子带到所述衬底的待沉积区而在待沉积区沉积形成薄膜；所述第二气体供给系统46包括第二气体管路462，所述第二气体管路462一端与第二气体源(未示出)相连通，另一端延伸到所述沉积部422内，且延伸到所述载台44的上方，以向所述沉积部422，尤其是向衬底的待沉积区供应第二气体，第二气体包括反应气体和/或保护气体，所述反应气体和保护气体可以为同一种气体，比如同为氮气；当所述第二气体为反应气体时，反应气体可以与靶材产生的粒子反应以于所述衬底的待沉积区形成薄膜；而如果所述第二气体作为保护气体时，可以对衬底形成良好的保护，避免衬底污染，如果选用的反应气体为氮气，则氮气可以同时起到参与溅射反应和保护衬底的作用。由于溅射部421的水平表面积小于沉积部422的水平表面积，因而衬底不会完全暴露于溅射部421的下方，可以仅使得待沉积区位于溅射部下方，故而在无需使用挡板的情况下(即本实施例的高通量薄膜沉积设备没有设置挡板)，通过巧妙设置的腔体结构，通过溅射部限定出一个较小的溅射和沉积区，仅通过移动衬底，即可改变衬底的不同区域与溅射部421的相对位置(衬底上只有位于溅射部正下方的区域才能沉积薄膜)，并借助惰性气体流将靶材溅射出的粒子引导到衬底的待沉积区，即可实现在衬底的不同位置进行薄膜沉积的目的。本发明的高通量薄膜沉积设备的工作原理为：首先，对衬底进行调整，溅射部对准衬底的第一个待沉积区，启动溅 射装置以使靶材产生粒子，以在第一沉积区域进行薄膜沉积；然后，改变衬底位置，比如通过使载台旋转而使衬底水平旋转，使得溅射部对准衬底的第二个沉积区域，使用靶材产生粒子以在第二沉积区域进行薄膜沉积，重复上述步骤直至完成所需的薄膜沉积。本发明的高通量薄膜沉积具有设备结构简单、水平移动部件少、成本较低、无需挡板等优点，可以在实现高通量共溅射的同时，避免有挡板的情况下在溅射过程中对溅射速率和薄膜均匀性造成的不良影响，有助于提高溅射效率和良率。
作为示例，所述第一气体喷淋头453与靶材的水平间距通常小于20cm，比如为3-10cm；而第一气体喷淋头453与溅射部421的腔壁的水平间距同样优选小于20cm，比如同样为3-10cm，以使溅射部421的结构尽量紧凑，因而可更灵活地调整衬底的溅射沉积区域。
作为示例，所述第一气体管路452和/或第二气体管路462上设置有质量流量计，以对相应的气体流量进行计量，且各气体管路上通常还设置有控制阀，以根据需要调节相应气体的供应流量；第一气体管路452上的质量流量计451和第二气体管路462上的质量流量计461，以及控制阀通常都设置在腔体外。
作为示例，所述第一气体喷淋头453为两个，两个所述第一气体喷淋头453对称设置于所述靶枪41(同时也是靶材的相对两侧)的相对两侧(第一气体喷淋头453的喷淋面可与靶材的溅射面在同一高度或略高于靶材的溅射面)，且所述第一气体喷淋头453的喷淋面可为弧面结构，因而两个第一气体喷淋头453对称设置在靶枪41的相对两侧而共同构成一类似柱状的气流通道，靶材上的粒子顺着该气流通道垂直向下移动到衬底的待沉积区以沉积成膜。
在一示例中，所述第一气体喷淋头453的喷淋面与水平面的夹角为锐角，该锐角例如在30度-60度之间，即第一气体喷淋头的喷淋面倾斜设置，故而复数个第一气体喷淋头453的喷淋面形成一类似漏斗状的气流通道，以更好地引导靶材的粒子运动到衬底的待沉积区。
在一示例中，所述高通量薄膜沉积设备还包括旋转装置，与所述载台44相连接，以驱动所述载台44旋转，以使所述衬底40上的不同的待沉积区位于所述靶材的正下方，比如所述旋转装置可包括一旋转轴43。
作为示例，所述高通量薄膜沉积设备还包括调节装置(未示出)，与所述靶枪41相连接，用于调节所述靶枪41的高度和/或角度(同时也是调整靶材的高度和/或角度)，有助于提高沉积均匀性。
在一示例中，所述高通量薄膜沉积设备还包括加热装置，位于所述沉积部422内，比如位于所述载台44表面或载台44内，所述加热装置可以为电阻加热器，而与加热加热器相连接的电源线可设置在前述的旋转轴43内。
作为示例，所述高通量薄膜沉积设备还包括实时测量装置(未示出)，位于所述沉积部422内，用于对所述衬底表面沉积的薄膜进行包括元素成分、薄膜厚度和微观结构的表征。
作为示例，所述靶枪41的中心点与所述载台44的中心点不在同一垂线上，也即所述靶材的中心点和衬底的中心点不在同一垂线上，由此可更方便地调整衬底的沉积区域和靶材的相对位置。
本发明还提供一种薄膜沉积方法，所述薄膜沉积方法依上述任一方案中所述的高通量薄膜沉积设备进行，故对所述高通量薄膜沉积设备的更多介绍还请参考前述内容，出于简洁的目的不赘述。本发明提供的薄膜沉积方法包括将衬底放置于载台44上，并使衬底的待沉积区位于靶材的正下方(即位于前述的溅射部正下方的沉积部内)，复数个第一气体喷淋头喷出的惰性气体流均朝向靶材溅射出的粒子，以借助惰性气体流将靶材溅射出的粒子引导到衬底的待沉积区而在待沉积区形成薄膜，在溅射过程中，仅通过调整衬底位置，比如通过使载台44旋转而带动衬底旋转，在无需使用挡板的情况下，即可实现对衬底的不同的待沉积区进行薄膜沉积的步骤。且在沉积过程中，根据不同的需要还可以调整靶材的高度和/或角度。
综上所述，本发明提供一种高通量薄膜沉积设备及薄膜沉积方法。所述高通量薄膜沉积设备包括：腔体、载台、靶枪、第一气体供给系统及第二气体供给系统；所述腔体包括相互连通的溅射部和沉积部，所述溅射部位于所述沉积部的上方，所述溅射部的水平表面积小于所述沉积部的水平表面积；所述靶枪位于所述溅射部内，所述靶枪上设置有靶材；所述载台位于沉积部内，用于承载待沉积的衬底，所述衬底上具有待沉积区，沉积过程中，所述待沉积区位于所述靶材的正下方；所述第一气体供给系统包括第一气体管路和第一气体喷淋头，所述第一气体管路一端与第一气体源相连通，另一端延伸至与所述溅射部内的第一气体喷淋头相连通，所述第一气体喷淋头为复数个，复数个所述第一气体喷淋头位于所述靶枪的周向上，以朝所述靶枪方向供应第一气体，所述第一气体包括惰性气体；所述第二气体供给系统包括第二气体管路，所述第二气体管路一端与第二气体源相连通，另一端延伸到所述沉积部内，且延伸到所述载台的上方，以向所述沉积部供应第二气体，第二气体包括反应气体和/或保护气体。本发明的高通量薄膜沉积设备结构简单、水平移动部件少、成本较低且无需使用挡板；位于工作平台上的衬底可以不水平移动而仅通过载台的旋转以调整衬底的溅射区域，且本发明还可以实现对衬底进行加热，并易于集成在线测试装置及其他外部装备，可以在实现高通量共溅射的同时，避免有挡板的情况下在溅射过程中对溅射速率和薄膜均匀性造成的不良影响，有助于提高沉积效率和良率。本发明的高通量薄膜沉积设备不仅可以用于沉积单一元素的薄膜，而且尤其适用于沉积多元系薄膜，有着极大的商业价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (10)

  1. 一种高通量薄膜沉积设备，其特征在于，所述高通量薄膜沉积设备包括：腔体、载台、靶枪、第一气体供给系统及第二气体供给系统；所述腔体包括相互连通的溅射部和沉积部，所述溅射部位于所述沉积部的上方，所述溅射部的水平表面积小于所述沉积部的水平表面积；所述靶枪位于所述溅射部内，所述靶枪上设置有靶材；所述载台位于所述沉积部内，用于承载待沉积的衬底，所述衬底上具有待沉积区，沉积过程中，所述待沉积区位于所述靶材的正下方；所述第一气体供给系统包括第一气体管路和第一气体喷淋头，所述第一气体管路一端与第一气体源相连通，另一端延伸至与所述溅射部内的第一气体喷淋头相连通，所述第一气体喷淋头为复数个，复数个所述第一气体喷淋头位于所述靶枪的周向上，以朝所述靶枪方向供应第一气体，所述第一气体包括惰性气体；所述第二气体供给系统包括第二气体管路，所述第二气体管路一端与第二气体源相连通，另一端延伸到所述沉积部内，且延伸到所述载台的上方，以向所述沉积部供应第二气体，第二气体包括反应气体和/或保护气体。
  2. 根据权利要求1所述的高通量薄膜沉积设备，其特征在于，所述第一气体管路和/或第二气体管路上设置有质量流量计。
  3. 根据权利要求1所述的高通量薄膜沉积设备，其特征在于，所述第一气体喷淋头为两个，两个所述第一气体喷淋头对称设置于所述靶枪的相对两侧。
  4. 根据权利要求3所述的高通量薄膜沉积设备，其特征在于，所述第一气体喷淋头的喷淋面与水平面的夹角为锐角。
  5. 根据权利要求1所述的高通量薄膜沉积设备，其特征在于，所述高通量薄膜沉积设备还包括旋转装置，与所述载台相连接，以驱动所述载台旋转，以使所述衬底的不同的待沉积区位于所述靶材的正下方。
  6. 根据权利要求1所述的高通量薄膜沉积设备，其特征在于，所述高通量薄膜沉积设备还包括调节装置，与所述靶枪相连接，用于调节所述靶枪的高度和/或角度。
  7. 根据权利要求1所述的高通量薄膜沉积设备，其特征在于，所述高通量薄膜沉积设备还包括加热装置，位于所述沉积部内。
  8. 根据权利要求1所述的高通量薄膜沉积设备，其特征在于，所述高通量薄膜沉积设备还包括实时测量装置，位于所述沉积部内，用于对所述衬底表面沉积的薄膜进行包括元素成分、薄膜厚度和微观结构的表征。
  9. 根据权利要求1-8任一项所述的高通量薄膜沉积设备，其特征在于，所述靶枪的中心点与所述载台的中心点不在同一垂线上。
  10. 一种薄膜沉积方法，其特征在于，所述薄膜沉积方法依权利要求1-9任一项所述的高通量薄膜沉积设备进行，所述薄膜沉积方法包括将衬底放置于载台上，并使衬底的待沉积区位于靶材的正下方，在溅射过程中，通过调整衬底位置，以对衬底的不同的待沉积区进行薄膜沉积的步骤。
PCT/CN2021/130328 2021-09-27 2021-11-12 高通量薄膜沉积设备及薄膜沉积方法 WO2023045052A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111137580.5 2021-09-27
CN202111137580.5A CN113862625B (zh) 2021-09-27 2021-09-27 高通量薄膜沉积设备及薄膜沉积方法

Publications (1)

Publication Number Publication Date
WO2023045052A1 true WO2023045052A1 (zh) 2023-03-30

Family

ID=78991405

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/130328 WO2023045052A1 (zh) 2021-09-27 2021-11-12 高通量薄膜沉积设备及薄膜沉积方法

Country Status (2)

Country Link
CN (1) CN113862625B (zh)
WO (1) WO2023045052A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116752106A (zh) * 2023-08-17 2023-09-15 上海陛通半导体能源科技股份有限公司 用于反应溅射的物理气相沉积设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116770222A (zh) * 2022-03-09 2023-09-19 上海集成电路材料研究院有限公司 一种高通量薄膜沉积设备、刻蚀设备及其方法
WO2023169140A1 (zh) * 2022-03-09 2023-09-14 上海集成电路材料研究院有限公司 一种高通量薄膜沉积设备、刻蚀设备及其方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06172995A (ja) * 1992-12-09 1994-06-21 Tokyo Electron Ltd マグネトロンスパッタリング装置及びスパッタリングガン
CN101061250A (zh) * 2004-11-08 2007-10-24 应用材料股份有限公司 具有可调节靶的物理气相沉积腔室
CN101068948A (zh) * 2004-11-08 2007-11-07 应用材料股份有限公司 具有可旋转衬底基座的物理气相沉积室
CN103572242A (zh) * 2012-08-06 2014-02-12 三星显示有限公司 薄膜沉积设备和利用其沉积薄膜的方法
CN110306160A (zh) * 2019-08-09 2019-10-08 中国科学院上海微系统与信息技术研究所 高通量薄膜沉积设备及薄膜沉积方法
CN111254383A (zh) * 2020-03-25 2020-06-09 上海陛通半导体能源科技股份有限公司 用于改善反应溅射膜层均匀性的物理气相沉积设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07238370A (ja) * 1994-02-28 1995-09-12 Mitsubishi Electric Corp スパッタリング式成膜装置
US20130327634A1 (en) * 2012-06-08 2013-12-12 Chang-Beom Eom Misaligned sputtering systems for the deposition of complex oxide thin films
CN202954086U (zh) * 2012-12-03 2013-05-29 京东方科技集团股份有限公司 一种镀膜设备及靶材
EP3064609B1 (en) * 2013-10-30 2020-09-16 Tokyo Electron Limited Deposition device and deposition method
CN112981350A (zh) * 2021-04-08 2021-06-18 浙江艾微普科技有限公司 均匀薄膜沉积的方法和设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06172995A (ja) * 1992-12-09 1994-06-21 Tokyo Electron Ltd マグネトロンスパッタリング装置及びスパッタリングガン
CN101061250A (zh) * 2004-11-08 2007-10-24 应用材料股份有限公司 具有可调节靶的物理气相沉积腔室
CN101068948A (zh) * 2004-11-08 2007-11-07 应用材料股份有限公司 具有可旋转衬底基座的物理气相沉积室
CN103572242A (zh) * 2012-08-06 2014-02-12 三星显示有限公司 薄膜沉积设备和利用其沉积薄膜的方法
CN110306160A (zh) * 2019-08-09 2019-10-08 中国科学院上海微系统与信息技术研究所 高通量薄膜沉积设备及薄膜沉积方法
CN111254383A (zh) * 2020-03-25 2020-06-09 上海陛通半导体能源科技股份有限公司 用于改善反应溅射膜层均匀性的物理气相沉积设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116752106A (zh) * 2023-08-17 2023-09-15 上海陛通半导体能源科技股份有限公司 用于反应溅射的物理气相沉积设备
CN116752106B (zh) * 2023-08-17 2023-11-10 上海陛通半导体能源科技股份有限公司 用于反应溅射的物理气相沉积设备

Also Published As

Publication number Publication date
CN113862625A (zh) 2021-12-31
CN113862625B (zh) 2022-11-22

Similar Documents

Publication Publication Date Title
WO2023045052A1 (zh) 高通量薄膜沉积设备及薄膜沉积方法
CN106567045B (zh) 管状旋转高纯硅溅射靶材的制备方法
CN106498350A (zh) 硅铝溅射靶材的制备方法
WO2021027173A1 (zh) 高通量薄膜沉积设备及薄膜沉积方法
CN109913840B (zh) 应用于多腔体镀膜装置的机械手及多腔体镀膜装置
CN105908047B (zh) 一种钛铝硅钽合金材料及其制备方法
WO2023045051A1 (zh) 溅射沉积设备及溅射沉积方法
JP2014515060A (ja) リチウム均一性を制御する改善された方法
CN108441838A (zh) 一种中大口径光学元件表面离子束溅射沉积薄膜的方法
CN112481595A (zh) 一种离子束溅射镀膜设备
WO2021031425A1 (zh) 高通量气相沉积设备及气相沉积方法
TW200815617A (en) Film forming apparatus and film forming method
CN110039044A (zh) 一种粉体表面包覆镀膜装置和方法
CN202954086U (zh) 一种镀膜设备及靶材
US20190211440A1 (en) Coating process using gas screen
US10233533B2 (en) Coating process using gas screen
CN101591765A (zh) 铬钛铝锆氮化物多组元硬质反应梯度膜的制备方法
WO2004042110A1 (ja) 基板上への成膜方法
CN106756814B (zh) 电子束蒸发倾斜沉积镀膜装置及使用方法
CN207793408U (zh) 一种基于pvd的表面梯度薄膜制备装置
TW201335398A (zh) 透明金屬氧化物膜之反應性磁控濺鍍的方法及裝置
WO2023169140A1 (zh) 一种高通量薄膜沉积设备、刻蚀设备及其方法
CN206872936U (zh) 一种多离子源溅射生产薄膜的装置
CN108103446A (zh) 一种基于pvd的表面梯度薄膜制备装置
CN105112853A (zh) 一种配备有开孔挡板的真空镀膜机系统

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21958165

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE