WO2023043163A1 - 양면 냉각 반도체 장치 - Google Patents
양면 냉각 반도체 장치 Download PDFInfo
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- WO2023043163A1 WO2023043163A1 PCT/KR2022/013675 KR2022013675W WO2023043163A1 WO 2023043163 A1 WO2023043163 A1 WO 2023043163A1 KR 2022013675 W KR2022013675 W KR 2022013675W WO 2023043163 A1 WO2023043163 A1 WO 2023043163A1
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- cooling structure
- cooling
- metal plate
- semiconductor device
- inner metal
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
Definitions
- the present invention relates to a double-sided cooling semiconductor device.
- Power semiconductors can convert power supplied from a power source or battery in any device that uses power into voltage and current levels required by various systems (eg, automobiles), and manage power throughout the system.
- Power semiconductors may be used in the form of modules in which individual devices, integrated circuits, and multiple devices are packaged according to application purposes and withstand voltage characteristics. Since such a power semiconductor must be able to operate in a harsh environment having a high operating temperature and a long operating time, high reliability is required. In this regard, research on a method of cooling a semiconductor device from both sides in order to handle a high calorific value of a power semiconductor is active.
- An object to be solved by the present invention is to provide a double-sided cooling semiconductor device capable of improving cooling efficiency by forming a cooling structure inside a semiconductor device and simplifying an assembly process with an external cooling structure.
- a double-sided cooling semiconductor device includes a first cooling structure and a second cooling structure including a thermally conductive electrical insulating layer; a first inner metal plate formed on an upper surface of the second cooling structure; a second inner metal plate formed on a lower surface of the first cooling structure; a third inner metal plate formed on the first inner metal plate and supporting a semiconductor chip; a metal block formed on the semiconductor chip; and a fourth inner metal plate formed under the second inner metal plate and having a metal block insertion hole into which the metal block is inserted.
- the first cooling structure and the second cooling structure may each include a metal plate therein.
- the double-sided cooling semiconductor device may further include one or more concavo-convex structures to prevent flow of molding resin.
- a cross-sectional shape of the metal block insertion hole and a cross-sectional shape of the metal block may be circular.
- the double-sided cooling semiconductor device may further include a third cooling structure attached to a lower surface of the second cooling structure and including one or more coolant entrances.
- the double-sided cooling semiconductor device may further include a fourth cooling structure attached to a lower surface of the first cooling structure and including one or more coolant entrances.
- the third cooling structure and the fourth cooling structure form one cooling structure and may be formed by bending or deforming metal.
- a double-side cooling semiconductor system may include the double-side cooling semiconductor device; external cooling structure; and an interconnection layer including a thermally conductive material and connecting the double-sided cooling semiconductor device and the external cooling structure.
- cooling efficiency may be improved and an assembly process with an external cooling structure may be simplified.
- FIG. 1 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment
- FIG. 2 is a diagram for explaining a double-sided cooling semiconductor system according to an exemplary embodiment.
- FIG. 3 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment.
- FIG. 4 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment.
- FIG. 5 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment.
- FIG. 6 is a diagram for explaining a double-sided cooling semiconductor system according to an exemplary embodiment.
- FIG. 1 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment
- FIG. 2 is a diagram for describing a double-sided cooling semiconductor system according to an exemplary embodiment.
- a double-sided cooling semiconductor device 1 may include cooling structures 15 and 29 .
- Cooling structures 15 and 29 may include a thermally conductive electrically insulating layer.
- the thermally conductive electrical insulation layer can be made using a thermally conductive material having electrical insulation properties.
- the thermally conductive electrically insulating layer may include a ceramic material.
- the thermally conductive electrical insulation layer may include a polymer composite in the form of a composite in which a polymer material and a large amount of a metal, carbon, or ceramic filler are mixed.
- the thermally conductive electrical insulation layer is formed by powder molding with a powder having high heat transfer properties such as Al 2 O 3 , AlN, Si 3 N 4 and the like, and at the same time having high insulation properties, and then subjected to high-temperature treatment (eg, about Celsius). 600 degrees or more) may include one material.
- high-temperature treatment eg, about Celsius
- the cooling structures 15 and 29 may further include metal plates 15-1 and 29-1. Upon powder formation of the thermally conductive electrical insulation layer, the metal plates 15 - 1 and 29 - 1 may be disposed inside the cooling structures 15 and 29 .
- the cooling structures 15 and 29 may increase the thermal conductivity of the thermally conductive electrical insulation layer by having the metal plates 15-1 and 29-1, and the cooling structures 15 and 29 may increase the thermal conductivity of the external cooling structure 13 When combined with, it is possible to prevent microcracks that may occur due to pressure.
- the metal plates 15-1 and 29-1 may be included without surfaces exposed inside the cooling structures 15 and 29, and in other embodiments, the metal plates 15-1 and 29-1 One surface of may be exposed to the outside through one surface of the cooling structures 15 and 29 . Alternatively, in some other embodiments, the cooling structures 15 and 29 may not include the metal plates 15-1 and 29-1.
- the double-sided cooling semiconductor device 1 may further include a molding resin layer 34 filling between the cooling structures 15 and 29 .
- the molding resin layer 34 may correspond to an electrical insulation layer.
- the double-sided cooling semiconductor device 1 may include one or more concave-convex structures 16 and 17 to prevent flow of molding resin.
- the uneven structures 16 and 17 preventing the flow of molding resin can prevent resin from flowing out. Due to the concavo-convex structures 16 and 17 preventing the flow of molding resin, it is possible to omit a post-molding polishing process to remove spilled resin or a film attachment process before molding to prevent the flow of resin, simplifying the manufacturing process and Cost and time savings can be achieved.
- a first inner metal plate 28 may be formed on an upper surface of the cooling structure 29 .
- the first inner metal plate 28 may be a metal plate capable of being soldered or sintered.
- the first inner metal plate 28 may be formed by coating at least one of nickel, silver, tin, lead, and copper on the upper surface of the cooling structure 29, and the coating method is selectively immersed in a metal solution , paste application, electroless plating, and the like. The application may be performed in a step of manufacturing the cooling structure 29 .
- a second inner metal plate 18 may be formed on the lower surface of the cooling structure 15 , and the description of the first inner metal plate 28 may be referred to for the second inner metal plate 18 .
- a third inner metal plate 26 may be formed on the first inner metal plate 28 .
- the third inner metal plate 26 may serve to support the semiconductor chips 24 and 31 .
- the first inner metal plate 28 and the third inner metal plate 26 may be bonded to each other through a solder layer or a sintered adhesive layer 27 .
- the solder layer may include, for example, silver, tin, lead, copper, or a combination of these metals
- the sintered adhesive layer may include silver, copper, or a combination of these metals.
- the semiconductor chips 24 and 31 may be power semiconductor devices.
- Power semiconductor devices include SCR (Silicon Controlled Rectifier), SiC (Silicon Carbide), IGBT (Insulated Gate Bipolar Transistor), FET (Field Effect Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), power rectifier, A power regulator or the like may be mentioned, and in particular, a power MOSFET device may be used, and may have a double-diffused metal oxide semiconductor (DMOS) structure unlike a general MOSFET due to high voltage and high current operation. However, the scope of the present invention is not limited to these examples.
- the semiconductor chips 24 and 31 may be attached to the third internal metal plate 26 through solder layers or sintered adhesive layers 25 and 30 . In some embodiments, a wire connection may be formed between the semiconductor chips 24 and 31 and the third internal metal plate 26 as needed.
- Metal blocks 22 and 33 may be formed on the semiconductor chips 24 and 31 . Meanwhile, a fourth inner metal plate 20 having a metal block insertion hole may be formed under the second inner metal plate 18 .
- the cross-sectional shape of the metal block insertion hole may be circular, and the cross-sectional shapes of the metal blocks 22 and 33 may also be circular.
- the metal blocks 22 and 33 may be firmly fixed by being inserted into the metal block insertion hole formed in the fourth inner metal plate 20 through mechanical pressure.
- the cross-sectional diameter of the metal blocks 22 and 33 and the cross-sectional diameter of the metal block insertion hole may be determined to sufficiently secure the fixing force of the two elements.
- the cross-sectional diameter of the metal block insertion hole may be formed to be the same as or slightly smaller than the cross-sectional diameter of the metal blocks 22 and 33 .
- the cross sections of the metal blocks 22 and 33 and the cross sections of the metal block insertion holes may be formed in shapes other than circular. Due to the structure of the metal blocks 22 and 33 and the fourth inner metal plate 20, the assembly or manufacturing process of the semiconductor device 1 is easy, while providing sufficient fixing force to the internal elements of the semiconductor device 1. Thus, the degree of completeness of assembly of the semiconductor device 1 can be improved.
- Bottom surfaces of the metal blocks 22 and 33 may be attached to the semiconductor chips 24 and 31 through solder layers or sintered adhesive layers 23 and 32 . Also, the upper surfaces of the metal blocks 22 and 33 and the fourth inner metal plate 20 may be attached to the second inner metal plate 18 through a solder layer or a sintered adhesive layer 19 .
- the semiconductor devices 1a, 1b, 1c, and 1d manufactured as described in relation to FIG. 1 have an external cooling structure through interconnection layers 10a, 10b, 10c, and 10d that are thermally conductive materials. (13) to form the semiconductor system (2).
- a coolant may flow inside the external cooling structure 13 .
- the external cooling structure 13 is made of a metal material, an electrical short circuit may occur when the semiconductor devices 1a, 1b, 1c, and 1d are assembled between the external cooling structures 13. To prevent this, a thermally conductive and electrically insulating layer needs to be formed between the semiconductor devices 1a, 1b, 1c, and 1d and the external cooling structure 13.
- a method of forming a thermally conductive electrical insulation layer between the interconnection layers 10a, 10b, 10c, and 10d may be considered.
- the interconnection layers 10a, 10b, 10c, and 10d are thermally conductive.
- the interconnection layers 10a and 10b , 10c, 10d) only need to have thermal conductivity and do not necessarily have to have electrical insulation. Accordingly, according to the present embodiment, by simply forming the interconnection layers 10a, 10b, 10c, and 10d having a one-layer structure, the electrical short circuit problem can be prevented, the manufacturing and assembly processes are simplified, and the semiconductor device It may also be advantageous in terms of the size of (1a, 1b, 1c, 1d).
- the interconnection layers 10a and 10b are implemented as three layers, four thermally conductive layers and two thermally conductive electrical insulation layers are needed Furthermore, if the area where the semiconductor devices 1a and 1b are disposed is assembled by repeating 7 times, a total of 28 thermally conductive layers and 14 thermally conductive electrical insulation layers in the vertical direction are required. In contrast, when assembling the semiconductor devices 1a and 1b to the external cooling structure 13, if the interconnection layers 10a and 10b are implemented as one layer according to embodiments, only one thermal conductive layer is required. . Furthermore, if the regions where the semiconductor devices 1a and 1b are disposed are repeatedly assembled 7 times, a total of 14 thermally conductive layers need only be formed in the vertical direction.
- FIG. 3 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment.
- a double-sided cooling semiconductor device 3 may include cooling structures 39 and 51 .
- the cooling structures 39 and 51 may include a thermally conductive electrically insulating layer.
- the thermally conductive electrical insulation layer can be made using a thermally conductive material having electrical insulation properties.
- the thermally conductive electrically insulating layer may include a ceramic material.
- the thermally conductive electrical insulation layer may include a polymer composite in the form of a composite in which a polymer material and a large amount of a metal, carbon, or ceramic filler are mixed.
- the thermally conductive electrical insulation layer is formed by powder molding with a powder having high heat transfer properties such as Al 2 O 3 , AlN, Si 3 N 4 and the like, and at the same time having high insulation properties, and then subjected to high-temperature treatment (eg, about Celsius). 600 degrees or more) may include one material.
- the cooling structures 39 and 51 may further include metal plates 39-1 and 51-1. Upon powder formation of the thermally conductive electrical insulation layer, the metal plates 39 - 1 and 51 - 1 may be disposed inside the cooling structures 39 and 51 .
- the cooling structures 39 and 51 may increase the thermal conductivity of the thermally conductive electrical insulation layer by including the metal plates 39-1 and 51-1, and the cooling structures 39 and 51 are combined with the external cooling structure. It can prevent micro cracks that may occur in the case of
- the metal plates 39-1 and 51-1 may be included without surfaces exposed inside the cooling structures 39 and 51, and in other embodiments, the metal plates 39-1 and 51-1 One surface of may be exposed to the outside through one surface of the cooling structure (39, 51). Alternatively, in some other embodiments, the cooling structures 39 and 51 may not include the metal plates 39-1 and 51-1.
- a first inner metal plate 50 may be formed on an upper surface of the cooling structure 51 .
- the first inner metal plate 50 may be a metal plate capable of being soldered or sintered.
- the first inner metal plate 50 may be formed by coating at least one of nickel, silver, tin, lead, and copper on the upper surface of the cooling structure 51, and the coating method is selectively immersed in a metal solution , paste application, electroless plating, and the like. The application may be performed in a step of manufacturing the cooling structure 51 .
- a second inner metal plate 40 may be formed on the lower surface of the cooling structure 39 , and the description of the first inner metal plate 50 may be referred to for the second inner metal plate 40 .
- the double-sided cooling semiconductor device 3 may further include a cooling structure 37 .
- the cooling structures 39 and 51 may be attached to the cooling structure 37 by, for example, high temperature surface melting of about 600 degrees Celsius or more, oxide film melting, or direct attachment of aluminum or copper of about 1000 degrees Celsius or more.
- the lower surface of the cooling structure 51 may be attached to one end of the cooling structure 37 where the coolant inlet 56b is located, and the upper surface of the cooling structure 39 is the coolant inlet 56a of the cooling structure 37. ) can be attached to the other end where it is located.
- the first inner metal plate 50 may be first formed on the upper surface of the cooling structure 51 and then bonded to the cooling structure 37 on the lower surface of the cooling structure 51, in the opposite order. After bonding with the cooling structure 37 is made on the lower surface of the 51 , the first inner metal plate 50 may be formed on the upper surface of the cooling structure 51 .
- the second inner metal plate 40 may be first formed on the lower surface of the cooling structure 39 and then bonded to the cooling structure 37 on the upper surface of the cooling structure 39, in the opposite order. ) may be bonded to the cooling structure 37 on the upper surface, and then the second inner metal plate 40 may be formed on the lower surface of the cooling structure 39 .
- the cooling structure 37 may be formed by metal bending or deformation 38 . Accordingly, the first inner metal plate 50 and the second inner metal plate 40 bonded to the cooling structure 37 may face each other.
- the coolant entrance 56a formed in the cooling structure 37 and the coolant entrance 56a may be arranged to form a straight line in the vertical direction in the drawing. Due to the shape of the cooling structure 37, the cooling efficiency of the double-sided cooling semiconductor device 3 can be maximized. Meanwhile, a compression process using a jig may be performed at both ends of the cooling structure 37 before a soldering or sintering process.
- the double-sided cooling semiconductor device 3 may further include a molded resin layer 36 filling the inside thereof.
- the molding resin layer 36 may entirely cover the cooling structure 37 having a bent or deformed metal shape 38 and expose only the coolant entrances 56a and 56b.
- a third inner metal plate 48 may be formed on the first inner metal plate 50 .
- the third inner metal plate 48 may serve to support the semiconductor chips 46 and 53 .
- the first inner metal plate 50 and the third inner metal plate 48 may be bonded to each other through a solder layer or a sintered adhesive layer 49 .
- the semiconductor chips 46 and 53 may be power semiconductor devices as described above with reference to FIG. 1 .
- the semiconductor chips 46 and 53 may be attached to the third internal metal plate 48 through solder layers or sintered adhesive layers 47 and 52 .
- a wire connection may be formed between the semiconductor chips 46 and 53 and the third inner metal plate 48 as needed.
- Metal blocks 44 and 55 may be formed on the semiconductor chips 46 and 53 . Meanwhile, fourth inner metal plates 42 and 43 having metal block insertion holes may be formed under the second inner metal plate 40 .
- the cross-sectional shape of the metal block insertion hole may be circular, and the cross-sectional shapes of the metal blocks 44 and 55 may also be circular.
- the metal blocks 44 and 55 may be firmly fixed by being inserted into the metal block insertion holes formed in the fourth inner metal plates 42 and 43 through mechanical pressure.
- the cross-sectional diameter of the metal blocks 44 and 55 and the cross-sectional diameter of the metal block insertion hole may be determined to sufficiently secure the fixing force of the two elements.
- the cross-sectional diameter of the metal block insertion hole may be formed to be the same as or slightly smaller than the cross-sectional diameter of the metal blocks 44 and 55 .
- the cross sections of the metal blocks 44 and 55 and the cross sections of the metal block insertion holes may be formed in shapes other than circular. Due to the structures of the metal blocks 44 and 55 and the fourth internal metal plates 42 and 43, the assembly or manufacturing process of the semiconductor device 3 is easy, and the semiconductor device 3 has sufficient fixing force for internal elements. It is possible to increase the completeness of assembly of the semiconductor device 3 by providing.
- Bottom surfaces of the metal blocks 44 and 55 may be attached to the semiconductor chips 46 and 53 through solder layers or sintered adhesive layers 45 and 54 . Also, the upper surfaces of the metal blocks 44 and 55 and the fourth inner metal plates 42 and 43 may be attached to the second inner metal plate 40 through a solder layer or a sintered adhesive layer 41 .
- the assembly process for the external cooling structure (eg, the external cooling structure 13 of FIG. 2 or the external cooling structure 93 of FIG. 6, etc.) is simplified, and only the coolant entrances 56a and 56b are installed. Since the connection is necessary, manufacturing convenience may be increased.
- the thermally conductive electrical insulating layers, such as the cooling structures 39 and 51, are protected by the resin 36, these layers prevent microscopic forces that may occur due to pressure when the cooling structures 15, 29 are coupled with an external cooling structure. cracking can be prevented.
- a polishing process after molding to remove resin or a film attachment process before molding to prevent flow of resin can be omitted. , can simplify the manufacturing process and promote cost and time savings.
- FIG. 4 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment.
- a double-sided cooling semiconductor device 4 may include cooling structures 66 and 76 .
- Cooling structures 66 and 76 may include a thermally conductive electrically insulating layer.
- the thermally conductive electrical insulation layer can be made using a thermally conductive material having electrical insulation properties.
- the thermally conductive electrically insulating layer may include a ceramic material.
- the thermally conductive electrical insulation layer may include a polymer composite in the form of a composite in which a polymer material and a large amount of a metal, carbon, or ceramic filler are mixed.
- the thermally conductive electrical insulation layer is formed by powder molding with a powder having high heat transfer properties such as Al 2 O 3 , AlN, Si 3 N 4 and the like, and at the same time having high insulation properties, and then subjected to high-temperature treatment (eg, about Celsius). 600 degrees or more) may include one material.
- a thermally conductive electrical insulation layer as a thermal control material, it is possible to improve problems that cause deterioration and shortened lifespan of products and decrease in reliability due to greatly increased heat density in a limited area.
- the cooling structures 66 and 76 may further include metal plates 66-1 and 76-1. Upon powder formation of the thermally conductive electrical insulating layer, metal plates 66 - 1 and 76 - 1 may be disposed inside the cooling structures 66 and 76 .
- the cooling structures 66 and 76 may increase the thermal conductivity of the thermally conductive electrical insulation layer by including the metal plates 66-1 and 76-1, and the cooling structures 66 and 76 may include an external cooling structure (eg, For example, it is possible to prevent micro cracks that may occur when combined with a cooling water providing casting body).
- the metal plates 66-1 and 76-1 may be included without surfaces exposed inside the cooling structures 66 and 76, and in other embodiments, the metal plates 66-1 and 76-1 One surface of may be exposed to the outside through one surface of the cooling structures 66 and 76 . Alternatively, in some other embodiments, the cooling structures 66 and 76 may not include the metal plates 66-1 and 76-1.
- a first inner metal plate 75 may be formed on an upper surface of the cooling structure 76 .
- the first inner metal plate 75 may be a metal plate capable of being soldered or sintered.
- the first inner metal plate 75 may be formed by coating at least one of nickel, silver, tin, lead, and copper on the upper surface of the cooling structure 76, and the coating method is selectively immersed in a metal solution , paste application, electroless plating, and the like. Application may be performed at the stage of manufacturing the cooling structure 76 .
- a second inner metal plate 65 may be formed on the lower surface of the cooling structure 66 , and the description of the first inner metal plate 75 may be referred to for the second inner metal plate 65 .
- the double-sided cooling semiconductor device 4 may further include cooling structures 67a and 67b.
- the cooling structure 66 is coupled to the cooling structure 67a
- the cooling structure 76 is coupled to the cooling structure 67b, for example, a high temperature surface melting of about 600 degrees Celsius or more, an oxide film melting, or about 1000 degrees Celsius or more. It can be attached by direct attachment of aluminum or copper.
- the upper surface of the cooling structure 66 may be attached to the lower surface of the cooling structure 67a including the coolant inlets 68a and 68b, and the lower surface of the cooling structure 76 provides the coolant inlets 68c and 68d. It may be attached to the upper surface of the cooling structure 67b including the cooling structure 67b.
- the first internal metal plate 75 is formed on the upper surface of the cooling structure 76 and then bonded to the cooling structure 67b on the lower surface of the cooling structure 76.
- the lower surface of 76 may be bonded to the cooling structure 67b and then the first inner metal plate 75 may be formed on the upper surface of the cooling structure 76 .
- the second inner metal plate 65 may be first formed on the lower surface of the cooling structure 66 and then bonded to the cooling structure 67a on the upper surface of the cooling structure 66, in the opposite order. ) may be bonded to the cooling structure 67a on the upper surface, and then the second inner metal plate 65 may be formed on the lower surface of the cooling structure 66 .
- the double-sided cooling semiconductor device 4 may further include a molded resin layer 69 filling the inside thereof.
- the molding resin layer 69 may entirely cover the cooling structures 67a and 67b and expose only the coolant entrances 68a, 68b, 68c and 68d.
- a third inner metal plate 73 may be formed on the first inner metal plate 75 .
- the third inner metal plate 73 may serve to support the semiconductor chips 60 and 71 .
- the first inner metal plate 75 and the third inner metal plate 73 may be bonded to each other through a solder layer or a sintered adhesive layer 74 .
- the semiconductor chips 60 and 71 may be power semiconductor devices as described above with reference to FIG. 1 .
- the semiconductor chips 60 and 71 may be attached to the third internal metal plate 73 through solder layers or sintered adhesive layers 59 and 72 .
- a wire connection may be formed between the semiconductor chips 60 and 71 and the third inner metal plate 73 as needed.
- Metal blocks 62 and 69 may be formed on the semiconductor chips 60 and 71 . Meanwhile, a fourth inner metal plate 63 having a metal block insertion hole may be formed under the second inner metal plate 65 .
- the cross-sectional shape of the metal block insertion hole may be circular, and the cross-sectional shapes of the metal blocks 62 and 69 may also be circular.
- the metal blocks 62 and 69 may be firmly fixed by being inserted into the metal block insertion hole formed in the fourth inner metal plate 63 through mechanical pressure.
- the cross-sectional diameter of the metal blocks 62 and 69 and the cross-sectional diameter of the metal block insertion hole may be determined to sufficiently secure the fixing force of the two elements.
- the cross-sectional diameter of the metal block insertion hole may be the same as or slightly smaller than the cross-sectional diameter of the metal blocks 62 and 69 .
- the cross sections of the metal blocks 62 and 69 and the cross sections of the metal block insertion holes may be formed in shapes other than circular. Due to the structures of the metal blocks 62 and 69 and the fourth inner metal plate 63, the assembly or manufacturing process of the semiconductor device 4 is easy, while providing sufficient fixing force to the internal elements of the semiconductor device 4. Thus, the completeness of assembly of the semiconductor device 4 can be improved.
- the lower surfaces of the metal blocks 62 and 69 may be attached to the semiconductor chips 60 and 71 through solder layers or sintered adhesive layers 61 and 70 . Also, the upper surfaces of the metal blocks 62 and 69 and the fourth inner metal plate 63 may be attached to the second inner metal plate 65 through a solder layer or a sintered adhesive layer 64 .
- the assembly process for the external cooling structure (eg, the external cooling structure 13 of FIG. 2 or the external cooling structure 93 of FIG. 6, etc.) is simplified, and the coolant entrances 68a, 68b, and 68c , 68d), manufacturing convenience can be increased.
- the thermally conductive electrical insulating layers, such as the cooling structures 66 and 76, are protected by the resin 69, these layers can prevent the microstructures that may be caused by pressure when the cooling structures 66, 76 are coupled with an external cooling structure. cracking can be prevented.
- the metal plates that operate electrically in the double-sided cooling semiconductor device 4 are not exposed, it is possible to omit a polishing process after molding to remove resin or a film attachment process before molding to prevent flow of resin. , can simplify the manufacturing process and promote cost and time savings.
- FIG. 5 is a diagram for explaining a double-sided cooling semiconductor device according to an exemplary embodiment
- FIG. 6 is a diagram for explaining a double-sided cooling semiconductor system according to an exemplary embodiment.
- a double-sided cooling semiconductor device 5 may include cooling structures 79 and 81 .
- Cooling structures 79 and 81 may include a thermally conductive electrically insulating layer.
- the thermally conductive electrical insulation layer can be made using a thermally conductive material having electrical insulation properties.
- the thermally conductive electrically insulating layer may include a ceramic material.
- the thermally conductive electrical insulation layer may include a polymer composite in the form of a composite in which a polymer material and a large amount of a metal, carbon, or ceramic filler are mixed.
- the thermally conductive electrical insulation layer is formed by powder molding with a powder having high heat transfer properties such as Al 2 O 3 , AlN, Si 3 N 4 and the like, and at the same time having high insulation properties, and then subjected to high-temperature treatment (eg, about Celsius). 600 degrees or more) may include one material.
- a thermally conductive electrical insulation layer as a thermal control material, it is possible to improve problems that cause deterioration and shortened lifespan of products and decrease in reliability due to greatly increased heat density in a limited area.
- the cooling structures 79 and 81 may further include metal plates 79-1 and 81-1. Upon powder formation of the thermally conductive electrical insulating layer, metal plates 79 - 1 and 81 - 1 may be disposed inside the cooling structures 79 and 81 .
- the cooling structures 79 and 81 may increase the thermal conductivity of the thermally conductive electrical insulation layer by having the metal plates 79-1 and 81-1, and the cooling structures 79 and 81 may be provided with the external cooling structure 93 When combined with, it is possible to prevent microcracks that may occur due to pressure.
- the metal plates 79-1 and 81-1 may be included without surfaces exposed inside the cooling structures 79 and 81, and in other embodiments, the metal plates 79-1 and 81-1 One surface of may be exposed to the outside through one surface of the cooling structure (79, 81). Alternatively, in some other embodiments, the cooling structures 79 and 81 may not include the metal plates 79-1 and 81-1.
- the double-sided cooling semiconductor device 5 may further include a molding resin layer 92 .
- the molding resin layer 92 may correspond to an electrical insulation layer.
- the double-sided cooling semiconductor device 5 may include one or more concave-convex structures 90 and 91 to prevent flow of molding resin.
- the molded resin flow prevention concave-convex structures 90 and 91 can prevent the resin from flowing out when the molded resin layer 92 is filled. Due to the concavo-convex structures 90 and 91 to prevent the flow of molding resin, it is possible to omit a post-molding polishing process to remove spilled resin or a film attachment process before molding to prevent the flow of resin, simplifying the manufacturing process and Cost and time savings can be achieved.
- the molding resin layer 92 may cover the entire cooling structure 80 and expose only the coolant entrances 89a and 89b.
- a first inner metal plate 78 may be formed on an upper surface of the cooling structure 79 .
- the first inner metal plate 78 may be a metal plate capable of being soldered or sintered.
- the first inner metal plate 78 may be formed by coating at least one of nickel, silver, tin, lead, and copper on the upper surface of the cooling structure 79, and the coating method is selectively immersed in a metal solution , paste application, electroless plating, and the like. The application may be performed at the stage of manufacturing the cooling structure 79 .
- a second inner metal plate 82 may be formed on the lower surface of the cooling structure 81 , and the description of the first inner metal plate 78 may be referred to for the second inner metal plate 82 .
- the double-sided cooling semiconductor device 5 may further include a cooling structure 80 .
- the cooling structures 79 and 81 may be attached to the cooling structure 79 by, for example, hot surface melting of about 600 degrees Celsius or greater, oxide film melting, or direct attachment of aluminum or copper of about 1000 degrees Celsius or greater.
- a lower surface of the cooling structure 79 may be attached to an upper surface of the cooling structure 80 including coolant entrances 89a and 89b.
- the first internal metal plate 78 is formed on the upper surface of the cooling structure 79 and then bonded to the cooling structure 80 on the lower surface of the cooling structure 79.
- the lower surface of 79 may be bonded to the cooling structure 80 and then the first inner metal plate 78 may be formed on the upper surface of the cooling structure 79 .
- a third inner metal plate 76 may be formed on the first inner metal plate 78 .
- the third inner metal plate 76 may serve to support the semiconductor chips 74 and 87 .
- the first inner metal plate 78 and the third inner metal plate 76 may be bonded to each other through a solder layer or a sintered adhesive layer 77 .
- the solder layer may include, for example, silver, tin, lead, copper, or a combination of these metals
- the sintered adhesive layer may include silver, copper, or a combination of these metals.
- the semiconductor chips 74 and 87 may be power semiconductor devices as described above with reference to FIG. 1 .
- the semiconductor chips 74 and 87 may be attached to the third inner metal plate 76 through solder layers or sintered adhesive layers 75 and 88 .
- a wire connection may be formed between the semiconductor chips 74 and 87 and the third inner metal plate 76 as needed.
- Metal blocks 72 and 85 may be formed on the semiconductor chips 74 and 87 . Meanwhile, a fourth inner metal plate 84 having a metal block insertion hole may be formed under the second inner metal plate 82 .
- the cross-sectional shape of the metal block insertion hole may be circular, and the cross-sectional shapes of the metal blocks 72 and 85 may also be circular.
- the metal blocks 72 and 85 may be firmly fixed by being inserted into the metal block insertion hole formed in the fourth inner metal plate 84 through mechanical pressure.
- the cross-sectional diameter of the metal blocks 72 and 85 and the cross-sectional diameter of the metal block insertion hole may be determined to sufficiently secure the fixing force of the two elements.
- the cross-sectional diameter of the metal block insertion hole may be formed to be the same as or slightly smaller than the cross-sectional diameter of the metal blocks 72 and 85 .
- the cross sections of the metal blocks 72 and 85 and the cross sections of the metal block insertion holes may be formed in shapes other than circular. Due to the structure of the metal blocks 72 and 85 and the fourth inner metal plate 84, the assembly or manufacturing process of the semiconductor device 5 is easy, while providing sufficient fixing force to the internal elements of the semiconductor device 5. Thus, the completeness of assembly of the semiconductor device 5 can be improved.
- Bottom surfaces of the metal blocks 72 and 85 may be attached to the semiconductor chips 74 and 87 through solder layers or sintered adhesive layers 73 and 86 . Also, the upper surfaces of the metal blocks 72 and 85 and the fourth inner metal plate 84 may be attached to the second inner metal plate 82 through a solder layer or a sintered adhesive layer 83 .
- the semiconductor devices 5a, 5b, 5c, and 5d manufactured as described in relation to FIG. 5 are provided with an external cooling structure 93 through interconnection layers 10a and 10b, which are thermally conductive materials. connected to form the semiconductor system 6 .
- a coolant may flow inside the external cooling structure 93 .
- the external cooling structure 93 is made of a metal material, an electrical short circuit may occur when the semiconductor devices 5a, 5b, 5c, and 5d are assembled between the external cooling structures 13. To prevent this, a thermally conductive and electrically insulating layer needs to be formed between the semiconductor devices 5a, 5b, 5c, and 5d and the external cooling structure 13.
- the interconnection layers 10a and 10b are thermally conductive. It does not necessarily have to have electrical insulation. Therefore, according to the present embodiment, simply forming the one-layer interconnection layers 10a and 10b can prevent the electrical short circuit problem, simplify the manufacturing and assembling process, and improve the semiconductor devices 5a and 5b. , 5c, 5d) may also be advantageous in terms of size.
- the assembly process for the external cooling structure 93 is simplified and only the coolant entrances 89a and 89b need to be connected, manufacturing convenience can be increased.
- the thermally conductive electrical insulating layers, such as the cooling structures 79 and 81, are protected by the resin 92, these layers may cause microscopic microstructures that may occur due to pressure when the cooling structures 79 and 81 are coupled with an external cooling structure. cracking can be prevented.
- the metal plates that operate electrically in the double-sided cooling semiconductor device 5 are not exposed, a polishing process after molding to remove resin or a film attachment process before molding to prevent flow of resin can be omitted. , can simplify the manufacturing process and promote cost and time savings.
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (8)
- 열 전도성 전기 절연층을 포함하는 제1 냉각 구조체 및 제2 냉각 구조체;상기 제2 냉각 구조체의 상면 상에 형성되는 제1 내부 금속판;상기 제1 냉각 구조체의 하면 상에 형성되는 제2 내부 금속판;상기 제1 내부 금속판 상에 형성되고, 반도체 칩을 지지하는 제3 내부 금속판;상기 반도체 칩 상에 형성되는 금속 블록; 및상기 제2 내부 금속판 아래에 형성되고, 상기 금속 블록이 삽입되는 금속 블록 삽입 홀이 형성된 제4 내부 금속판을 포함하는양면 냉각 반도체 장치.
- 제1항에 있어서,상기 제1 냉각 구조체 및 상기 제2 냉각 구조체는 그 내부에 금속판을 각각 포함하는, 양면 냉각 반도체 장치.
- 제1항에 있어서,하나 이상의 성형 수지 흐름 방지 요철 구조를 더 포함하는, 양면 냉각 반도체 장치.
- 제1항에 있어서,상기 금속 블록 삽입 홀의 단면 형상과, 상기 금속 블록의 단면 형상은 원형인, 양면 냉각 반도체 장치.
- 제1항에 있어서,상기 제2 냉각 구조체의 하면에 부착되고, 하나 이상의 냉각제 출입구를 포함하는 제3 냉각 구조체를 더 포함하는 양면 냉각 반도체 장치.
- 제5항에 있어서,상기 제1 냉각 구조체의 하면에 부착되고, 하나 이상의 냉각제 출입구를 포함하는 제4 냉각 구조체를 더 포함하는 양면 냉각 반도체 장치.
- 제1항에 있어서,상기 제3 냉각 구조체 및 상기 제4 냉각 구조체는 하나의 냉각 구조체를 이루고, 금속 굽힘 또는 변형되어 형성되는, 양면 냉각 반도체 장치.
- 제1항에 있어서,상기 양면 냉각 반도체 장치;외부 냉각 구조체; 및열 전도성 소재를 포함하고, 상기 양면 냉각 반도체 장치와 상기 외부 냉각 구조체를 연결하는 상호 연결층을 포함하는,양면 냉각 반도체 시스템.
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KR100751286B1 (ko) * | 2006-04-11 | 2007-08-23 | 삼성전기주식회사 | 반도체 실장용 기판 및 반도체 패키지 제조방법 |
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KR20180002957A (ko) * | 2016-06-29 | 2018-01-09 | 현대자동차주식회사 | 파워 모듈 및 그 제조 방법 |
KR20180131130A (ko) * | 2017-05-31 | 2018-12-10 | 한온시스템 주식회사 | 전기소자 냉각용 열교환기 |
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- 2022-09-14 WO PCT/KR2022/013675 patent/WO2023043163A1/ko active Application Filing
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KR100751286B1 (ko) * | 2006-04-11 | 2007-08-23 | 삼성전기주식회사 | 반도체 실장용 기판 및 반도체 패키지 제조방법 |
US20110037166A1 (en) * | 2008-04-09 | 2011-02-17 | Fuji Electric Systems Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
KR20130014881A (ko) * | 2011-08-01 | 2013-02-12 | 삼성전자주식회사 | 홈이 형성된 기판을 포함하는 반도체 장치 |
KR20180002957A (ko) * | 2016-06-29 | 2018-01-09 | 현대자동차주식회사 | 파워 모듈 및 그 제조 방법 |
KR20180131130A (ko) * | 2017-05-31 | 2018-12-10 | 한온시스템 주식회사 | 전기소자 냉각용 열교환기 |
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