WO2023041018A1 - 溅射靶 - Google Patents

溅射靶 Download PDF

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Publication number
WO2023041018A1
WO2023041018A1 PCT/CN2022/119248 CN2022119248W WO2023041018A1 WO 2023041018 A1 WO2023041018 A1 WO 2023041018A1 CN 2022119248 W CN2022119248 W CN 2022119248W WO 2023041018 A1 WO2023041018 A1 WO 2023041018A1
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WO
WIPO (PCT)
Prior art keywords
target
stop member
sputtering target
tubular liner
sputtering
Prior art date
Application number
PCT/CN2022/119248
Other languages
English (en)
French (fr)
Inventor
陈超
卢建栋
林克克里斯汀
国谷勉
施密特亨里克
Original Assignee
攀时（上海）高性能材料有限公司
普兰西股份有限公司
攀时日本股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 攀时（上海）高性能材料有限公司, 普兰西股份有限公司, 攀时日本股份有限公司 filed Critical 攀时（上海）高性能材料有限公司
Priority to KR1020247008234A priority Critical patent/KR20240054999A/ko
Priority to US18/692,916 priority patent/US20240337008A1/en
Priority to JP2024515938A priority patent/JP2024531702A/ja
Priority to EP22869384.2A priority patent/EP4403668A1/en
Publication of WO2023041018A1 publication Critical patent/WO2023041018A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Definitions

  • the present application relates to a sputtering target.
  • Sputtering is a physical vapor deposition technique that refers to the physical process in which atoms in a solid target are struck by high-energy ions (usually from a plasma) to leave the solid and enter the gas.
  • Sputtering is generally in a vacuum system filled with inert gas, through the action of a high-voltage electric field, the argon gas is ionized to generate an argon ion flow, which bombards the target cathode, and the atoms or molecules of the sputtered target material accumulate on the semiconductor chip or glass.
  • a thin film is formed on the ceramic.
  • the advantage of sputtering is that it can prepare thin films of high melting point materials at lower temperatures, and keep the original composition unchanged in the process of preparing alloy and compound thin films, so it has been widely used in the manufacture of semiconductor devices and integrated circuits.
  • the sputtering target is a material that forms a thin film by sputtering, and is made of metal and ceramics.
  • various high-quality sputtering targets are required.
  • the sputtering target is mainly composed of the target blank, the back plate and other parts.
  • the target blank is the target material bombarded by the high-speed ion beam and belongs to the core part of the sputtering target.
  • the inside of the machine is a high-voltage, high-vacuum environment. Therefore, the ultra-high-purity metal sputtering target blank needs to be bonded to the back plate through different welding processes.
  • the back plate mainly plays the role of fixing the sputtering target, and Need to have good electrical and thermal conductivity.
  • tubular target material with a tubular target body and two connectors
  • the tubular target body has a notch
  • the connector has a flange
  • the flange engages with the notch
  • the connector has a depression
  • the inside of the depression is solder to connect the tubular target with the connector, but with this target, the solder tends to leak from the bottom end of the target as the temperature rises.
  • the target assembly has a plurality of target units and a plurality of connecting parts, and each of the plurality of target units has a cylindrical target and a cylinder shaped substrate, and the cylindrical substrate is bonded to the inner side of the cylindrical target.
  • the connection part is located inside the multiple target units, and each of the multiple target units has a gap between each other, but with this target, solder is also prone to leak from the bottom end of the target as the temperature rises .
  • the target installation mechanism installs a cylindrical target.
  • the target has a cylindrical support tube and a target material covering the support tube, and has a connecting area.
  • the target is connected to the clamp, but If this kind of target is used, as the temperature rises, the solder is also easy to leak from the bottom of the target.
  • the magnetron assembly has a first unit which allows the target to be removed from the cathode body, but with this target, As the temperature rises, the solder is also prone to leakage from the bottom end of the target.
  • the tubular target is composed of a support tube and a sputtering material tube.
  • the support tube is connected to the sputtering material tube through a threaded connection.
  • the O-shaped sealing ring is located between the support tube and the sputtering material tube.
  • the purpose of this application is to overcome the defects of the prior art and provide a sputtering target. According to the sputtering target provided by the present application, stable quality, high yield rate and cost saving are realized.
  • the first aspect of the present application relates to a sputtering target for forming a thin film by sputtering, including:
  • the axis is defined as the axial direction, and the plane where the radial direction is located is perpendicular to the axial direction;
  • At least one cylindrical target segment disposed on a tubular liner extending axially through at least 90% of the total length of the at least one cylindrical target segment;
  • a stop member for a target segment adjacent to the stop member is integrally formed with the tubular liner at an axial end region of the tubular liner and protrudes radially of the tubular liner and surrounds at least the tubular liner part of the circumference of the liner extends, and
  • a circumferential sealing member is interposed between the stop member and the adjacent target segment to prevent leakage of the bonding material.
  • the stop member extends continuously around the circumference of the tubular liner.
  • the stop member is a protruding step.
  • the protruding step is a protruding ridge with two parallel sidewalls.
  • the sealing member is an o-ring made of a resilient material and is compressed between the target segment and the stop member.
  • the stop member is a circumferential member having a radially protruding lip that presses against the stop member and/or the target segment to provide a sealing function.
  • the stop member is an integral part of the tubular liner.
  • the stop member and the adjacent target segment form a tongue-and-groove fit.
  • the target segment is made of a metallic material.
  • the metallic material is a molybdenum and/or tungsten based material.
  • the bonding material is solder.
  • the solder is indium solder or indium alloy solder.
  • the sputtering target further comprises at least two cylindrical target segments arranged axially side by side on the tubular liner,
  • At least two ends of at least two cylindrical target segments facing each other form a tongue-and-groove fit with each other in such a way that when viewed in the radial and/or axial direction, the At least one tongue overlaps at least one groove of the respective other end of two adjacent cylindrical target segments, said overlap extending at least around a part of the circumference of the respective end.
  • the leakage of solder from the lowermost end of the target is prevented, assembly accuracy and assembly stability are significantly improved, and stable quality, high yield and cost savings are realized.
  • FIG. 1 is a schematic diagram of a sputtering target according to a first embodiment of the present application.
  • FIG. 2 is a partial enlarged view of A in the sputtering target in FIG. 1 .
  • FIG. 3 is a partial enlarged view of the point B in the sputtering target in FIG. 1 .
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. connected, or integrally connected. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application in specific situations.
  • FIG. 1 is a schematic diagram of a sputtering target according to a first embodiment of the present application.
  • the sputtering target includes a tubular liner 1 and cylindrical target segments 2 and 3 , and the number of target segments is not limited to two, and may be three or more.
  • the axis of the liner 1 is defined as the axial direction (up-down direction in FIG. 1 ), and the plane where the radial direction of the liner 1 (left-right direction in FIG. 1 ) is located is perpendicular to the axial direction.
  • the cylindrical target segments 2 , 3 are arranged on a liner 1 , which extends axially over the entire total length of the target segments 2 , 3 .
  • the target segments 2, 3 are made of a metallic material, for example a material based on molybdenum and/or tungsten.
  • Adhesive material is arranged between the liner 1 and the target segments 2,3.
  • the bonding material is solder, such as indium solder or indium alloy solder.
  • a stop member is provided on the underside of the target segment 3 (at A in FIG. 1 ).
  • FIG. 2 is a partial enlarged view of A in FIG. 1 .
  • the stop member 4 is integrally formed with the liner 1 at the axial end region of the liner 1 and protrudes radially along the liner 1 , and extends around at least a part of the circumference of the liner 1 , ie stops.
  • the member 4 is an integral part of the liner 1 and the stop member 4 and the adjacent target segment 3 form a tongue-and-groove fit.
  • "Integral formation” shall include forming with the same material in one step or combining by welding, glue connection, etc.
  • a circumferential sealing member 5 is inserted between the stop member 4 and the target segment 3 to prevent leakage of the bonding material.
  • the stop member 4 extends continuously around the circumference of the liner 1 .
  • the sealing member 5 is an O-ring made of elastic material and is compressed between the target segment 3 and the stop member 4 , but it is not limited thereto, and may also be other suitable structures.
  • the stop member 4 is a protruding step, but it is not limited thereto, and may also be other applicable structures.
  • the protruding step portion may be a protruding ridge with two parallel side walls, which includes a substantially rectangular cross-section with two parallel side walls, but is not limited thereto, and may also be other suitable structures, for example, may also have The tapered cross-section and the step of the corresponding tapered groove.
  • the stop member 4 is a circumferential member with a radially protruding lip and presses against the stop member 4 and/or the target segment 3 to provide a sealing function, but it is not limited thereto, and also Other suitable structures are possible. That is, a circumferential seal extends circumferentially along the gap between two adjacent target segments, such as a lip, a T-profile, a foil, an annular metal piece with a spring function, etc.
  • the stopper member 4 comprises, for example, a groove or a tongue extending in the axial direction, but is not limited thereto, and may also be other suitable structures.
  • Fig. 3 is a partially enlarged view of the place B in Fig. 1 .
  • the two ends of the target segments 2 , 3 facing each other form a tongue-and-groove fit with each other in such a way that when viewed in the radial and/or axial direction, the target segment 2 A tongue 6 of an end overlaps a groove 7 of the corresponding other end of the target segment 3 , said overlapping extending around a part of the circumference of the corresponding end.
  • the multi-segment target joints are generally planar joints, and there is no fixed target boss on the surface of the back tube.
  • the sputtering target of the present application includes an integrally formed stop member and a sealing member, which can significantly improve the assembly accuracy and assembly stability, and during the application of the target, as the temperature increases, It can also prevent the solder from leaking from the bottom of the target.
  • the sputtering target in Example 1 includes: a tubular liner 1, cylindrical target segments 2, 3 made of molybdenum, a stop member 4, and a sealing member 5, and the target segments 2, 3 are arranged on the liner 1 , the liner 1 extends axially through the entire total length of the target segments 2 , 3 .
  • Indium solder is arranged between the liner 1 and the target segments 2 , 3 .
  • a stop element 4 is provided on the target segment 3 .
  • the stopper member 4 is integrally formed with the liner 1 at an axial end region of the liner 1 using the same material as the liner 1 , protrudes radially of the liner 1 , and extends continuously around the circumference of the liner 1 .
  • the stop member 4 is a protruding step, a protruding ridge with two parallel side walls, comprising a substantially rectangular cross-section with two parallel side walls.
  • the sputtering target in Example 2 includes: a tubular liner 1, cylindrical target segments 2, 3 made of tungsten, a stop member 4, and a sealing member 5, and the target segments 2, 3 are arranged on the liner 1 , the liner 1 extends axially through the entire length of the target segments 2, 3, and a plurality of target segments may also be provided between the target segments 2, 3.
  • Indium alloy solder is arranged between the liner 1 and the target segments 2 and 3 .
  • a stop element 4 is provided on the target segment 3 .
  • the stop member 4 is integrally formed with the liner 1 at an axial end region of the liner 1 by welding, protrudes radially from the liner 1 , and extends continuously around the circumference of the liner 1 .
  • the stop member 4 is a circumferential member with a radially protruding lip and presses against the stop member 4 and/or the target segment 3 to provide a sealing function.
  • the sputtering target in Example 3 comprises: a tubular liner 1, cylindrical target segments 2, 3 made of tantalum, a stop member 4, a sealing member 5, and the target segments 2, 3 are arranged on the liner 1 , the liner 1 extends axially through the entire length of the target segments 2, 3, and a plurality of target segments may also be provided between the target segments 2, 3.
  • Indium alloy solder is arranged between the liner 1 and the target segments 2 and 3 .
  • a stop element 4 is provided on the target segment 3 .
  • the stop member 4 is integrally formed with the liner 1 at an axial end region of the liner 1 by means of glue connection, protrudes radially from the liner 1 , and extends continuously around the circumference of the liner 1 .
  • the stop member 4 is an annular metal piece with a spring function. After the sputtering target of the present application is applied, the leakage of solder from the lowermost end of the target is prevented, the assembly accuracy and assembly stability are significantly improved, and the production efficiency is greatly improved.
  • the problem that the solder is easy to leak from the bottom end of the target as the temperature rises during the target application process is effectively solved, and the quality is stable, the yield rate is high, and the cost is saved.

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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Abstract

提供一种溅射靶，包括：管状衬管，其轴线定义为轴向，径向所在的面与轴向垂直；至少一个圆柱形的靶段，布置在管状衬管上，管状衬管沿轴向延伸通过至少一个圆柱形的靶段的总长度的至少90％；粘结材料，设置在管状衬管和圆柱形的靶段之间，该溅射靶还包括：止动构件，用于与该止动构件相邻的靶段，该止动构件在管状衬管的轴向端部区域与管状衬管一体形成且沿管状衬管径向突出，并至少围绕管状衬管的圆周的一部分延伸，周向的密封构件，其插入止动构件和相邻靶段之间，以防止粘结材料的泄漏。

Description

溅射靶 技术领域
本申请涉及一种溅射靶。
背景技术
溅射是一种物理气相沉积技术，指固体靶中的原子被高能量离子(通常来自等离子体)撞击而离开固体进入气体的物理过程。溅射一般是在充有惰性气体的真空系统中，通过高压电场的作用，使得氩气电离，产生氩离子流，轰击靶阴极，被溅出的靶材料原子或分子沉淀积累在半导体芯片或玻璃、陶瓷上而形成薄膜。溅射的优点是能在较低的温度下制备高熔点材料的薄膜，在制备合金和化合物薄膜的过程中保持原组成不变，所以在半导体器件和集成电路制造中已获得广泛的应用。
溅射靶材是一种通过溅射法生成薄膜的材料，由金属及陶瓷加工制造而成。近年来，对电子元件提出了进一步低功耗和高速化的需求，为了实现这些需求，就需要各种高品质的溅射靶材。
一般来说，溅射靶材主要由靶坯、背板等部分构成，其中，靶坯是高速离子束流轰击的目标材料，属于溅射靶材的核心部分，在溅射镀膜过程中，靶坯被离子撞击后，其表面原子被溅射飞散出来并沉积于基板上制成电子薄膜；由于高纯度金属强度较低，而溅射靶材需要安装在专用的机台内完成溅射过程，机台内部为高电压、高真空环境，因此，超高纯金属的溅射靶坯需要与背板通过不同的焊接工艺进行接合，背板起到主要起到固定溅射靶材的作用，且需要具备良好的导电、导热性能。
在现有技术中，有一种管状靶材，具有管状靶体和两个连接件，管状靶体具有凹口，连接件具有凸缘，凸缘与凹口接合，连接件具有凹陷部，凹陷部内有焊料将管状靶体与连接件连接，但是采用这种靶材的话，随着 温度的上升，焊料容易从靶材最下端泄露。
在现有技术中，还有一种靶材组件与靶材单元，靶材组件具有多个靶材单元和多个连结部，多个靶材单元中的每一个都具有筒状的靶材和筒状的基体，筒状的基体接合在筒状的靶材的内侧。连结部位于多个靶材单元的内侧，而多个靶材单元中的每一个相互之间有间隙，但是采用这种靶材的话，随着温度的上升，焊料同样容易从靶材最下端泄露。
在现有技术中，还有一种靶安装机构，靶安装机构安装圆筒形的靶，靶具备圆筒形的支持管和覆盖支持管的靶材，并且具有连结区域，靶与夹具相连，但是采用这种靶材的话，随着温度的上升，焊料同样容易从靶材最下端泄露。
在现有技术中，还有一种互锁圆柱形磁控管阴极和靶材，磁控管组件具有第一单元，第一单元允许靶材从阴极体移除，但是采用这种靶材的话，随着温度的上升，焊料同样容易从靶材最下端泄露。
在现有技术中，还有一种管形靶，管形靶由支承管和溅射材料管构成，支承管通过螺纹连接与溅射材料管相连，O形密封环位于支承管与溅射材料管之间，但是采用这种靶材的话，随着温度的上升，焊料同样容易从靶材最下端泄露。
由此可见，能否基于现有技术中的不足，提供一种改进的溅射靶，防止焊料从靶材最下端泄露，显著提高装配精度和装配稳定性，实现质量稳定、良品率高、节约成本，成为本领域技术人员亟待解决的技术难题。
发明内容
所要解决的课题
本申请的目的是在于克服现有技术的缺陷，提供一种溅射靶。根据本申请所提供的溅射靶，实现了质量稳定、良品率高、节约成本。
用于解决课题的方法
本申请第一方面涉及一种溅射靶，用于通过溅射法生成薄膜，包括：
管状衬管，其轴线定义为轴向，径向所在的面与轴向垂直；
至少一个圆柱形的靶段，布置在管状衬管上，管状衬管沿轴向延伸通过至少一个圆柱形的靶段的总长度的至少90％；
粘结材料，设置在管状衬管和圆柱形的靶段之间；
止动构件，用于与该止动构件相邻的靶段，该止动构件在管状衬管的轴向端部区域与管状衬管一体形成且沿管状衬管径向突出，并至少围绕管状衬管的圆周的一部分延伸，以及
周向的密封构件，其插入止动构件和相邻靶段之间，以防止粘结材料的泄漏。
在一些实施方式中，所述止动构件围绕管状衬管的圆周连续延伸。
在一些实施方式中，所述止动构件为突出的台阶部。
在一些实施方式中，所述突出的台阶部为具有两个平行侧壁的突出的脊。
在一些实施方式中，所述密封构件是由弹性材料制成的O形圈且被压缩在靶段和止动构件之间。
在一些实施方式中，止动构件为具有沿径向突出的唇缘并压靠在止动构件和/或靶段上以提供密封功能的周向构件。
在一些实施方式中，止动构件是管状衬管的整体零件。
在一些实施方式中，止动构件和相邻的靶段形成榫舌-凹槽配合。
在一些实施方式中，靶段由金属材料制成。
在一些实施方式中，金属材料为基于钼和/或钨的材料。
在一些实施方式中，粘结材料为焊料。
在一些实施方式中，焊料为铟焊料或铟合金焊料。
在一些实施方式中，溅射靶还包括沿轴向并排设置在管状衬管上的至少两个圆柱形的靶段，
其中，彼此面对的至少两个圆柱形的靶段的至少两个端部以如下方式彼此形成榫舌-凹槽配合，当沿径向和/或轴向方向观察时，使得一个端部 的至少一个榫舌与两个相邻的圆柱形的靶段的相应的另一个端部的至少一个凹槽重叠，上述重叠至少围绕相应的端部的圆周的一部分延伸。
效果
根据本申请第一方面所涉及的溅射靶，防止焊料从靶材最下端泄露，显著提高装配精度和装配稳定性，实现了质量稳定、良品率高、节约成本。
附图说明
图1为本申请的第一实施方式的溅射靶的示意图。
图2为图1中的溅射靶中的A处的局部放大图。
图3为图1中的溅射靶中的B处的局部放大图。
具体实施方式
下面将结合附图对本申请的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要说明的是，术语“中心”、“上”、“下”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
此外，下面所描述的本申请不同实施方式中所涉及的技术特征只要彼 此之间未构成冲突就可以相互结合。
图1为本申请的第一实施方式的溅射靶的示意图。如图1所示，溅射靶包括管状的衬管1和圆柱形的靶段2、3，靶段的数量不限于两个，也可以是三个或更多个。将衬管1的轴线定义为轴向(在图1中为上下方向)，衬管1的径向(在图1中为左右方向)所在的面与轴向垂直。圆柱形的靶段2、3布置在衬管1上，衬管1沿轴向延伸通过靶段2、3的整个总长度。在一些实施方式中，靶段2、3由金属材料制成，例如是由基于钼和/或钨的材料制成。在衬管1和靶段2、3之间设置有粘结材料。在一些实施方式中，粘结材料为焊料，例如是铟焊料或铟合金焊料。在靶段3的下侧(图1中的A处)设有止动构件。
图2为图1中A处的局部放大图。如图2所示，止动构件4在衬管1的轴向端部区域与衬管1一体形成且沿衬管1径向突出，并至少围绕衬管1的圆周的一部分延伸，即止动构件4为衬管1的整体零件，止动构件4和相邻的靶段3形成榫舌-凹槽配合。“一体形成”应包括用相同的材料一步成型或者通过焊接、胶水连接等结合。在止动构件4和靶段3之间插入防止粘结材料的泄漏的周向的密封构件5。在一些实施方式中，止动构件4围绕衬管1的圆周连续延伸。在一些实施方式中，密封构件5是由弹性材料制成的O形圈且被压缩在靶段3和止动构件4之间，但是并不限于此，也可以是其他适用的结构。
在一些实施方式中，止动构件4为突出的台阶部，但是并不限于此，也可以是其他适用的结构。突出的台阶部可以为具有两个平行侧壁的突出的脊，其包括具有两个平行侧壁的基本矩形横截面，但是并不限于此，也可以是其他适用的结构，例如也可以是具有锥形横截面和相应锥形凹槽的台阶部。
在一些实施方式中，止动构件4为具有沿径向突出的唇缘并压靠在止动构件4和/或靶段3上以提供密封功能的周向构件，但是并不限于此，也可以是其他适用的结构。即周向的密封件沿两个相邻靶段之间的间隙沿周 向延伸，例如为唇缘、T型轮廓、箔片、具有弹簧功能的环形金属件等。
在一些实施方式中，止动构件4包括例如在轴向方向上延伸的凹槽或榫舌，但是并不限于此，也可以是其他适用的结构。
图3为图1中B处的局部放大图。如图3所示，彼此面对的靶段2、3的两个端部以如下方式彼此形成榫舌-凹槽配合，当沿径向和/或轴向方向观察时，使得靶段2的端部的一个榫舌6与靶段3的相应的另一个端部的一个凹槽7重叠，上述重叠围绕相应的端部的圆周的一部分延伸。
现有的溅射靶在多段靶材拼接处一般都为平面接缝，也没有在背管表面设有固定靶材凸台。与现有的切割方式相比，本申请的溅射靶包括一体成形的止动构件，还包括密封构件，可以显著提高装配精度和装配稳定性，而且在靶材应用过程中，随着温度的上升，还能防止焊料从靶材最下端泄露。
以下，将对本申请合适的实施例做说明，不过本申请的实施形式不限于此。
＜实施例1＞
实施例1中的溅射靶包括：管状的衬管1、由钼制成的圆柱形的靶段2、3、止动构件4、密封构件5，靶段2、3布置在衬管1上，衬管1沿轴向延伸通过靶段2、3的整个总长度。在衬管1和靶段2、3之间设置有铟焊料。在靶段3设有止动构件4。止动构件4使用与衬管1相同的材料在衬管1的轴向端部区域与衬管1一体形成且沿衬管1径向突出，并围绕衬管1的圆周连续延伸。止动构件4为突出的台阶部，具有两个平行侧壁的突出的脊，其包括具有两个平行侧壁的基本矩形横截面。应用了本申请的溅射靶之后，防止焊料从靶材最下端泄露，显著提高装配精度和装配稳定性，大大提高了生产效率。
＜实施例2＞
实施例2中的溅射靶包括：管状的衬管1、由钨制成的圆柱形的靶段2、3、止动构件4、密封构件5，靶段2、3布置在衬管1上，衬管1沿轴向延 伸通过靶段2、3的整个总长度，在靶段2、3之间还可以设有多个靶段。在衬管1和靶段2、3之间设置有铟合金焊料。在靶段3设有止动构件4。止动构件4使用焊接的方式在衬管1的轴向端部区域与衬管1一体形成且沿衬管1径向突出，并围绕衬管1的圆周连续延伸。止动构件4为具有沿径向突出的唇缘并压靠在止动构件4和/或靶段3上以提供密封功能的周向构件。应用了本申请的溅射靶之后，防止焊料从靶材最下端泄露，显著提高装配精度和装配稳定性，大大提高了生产效率。
＜实施例3＞
实施例3中的溅射靶包括：管状的衬管1、由钽制成的圆柱形的靶段2、3、止动构件4、密封构件5，靶段2、3布置在衬管1上，衬管1沿轴向延伸通过靶段2、3的整个总长度，在靶段2、3之间还可以设有多个靶段。在衬管1和靶段2、3之间设置有铟合金焊料。在靶段3设有止动构件4。止动构件4使用胶水连接的方式在衬管1的轴向端部区域与衬管1一体形成且沿衬管1径向突出，并围绕衬管1的圆周连续延伸。止动构件4为具有弹簧功能的环形金属件。应用了本申请的溅射靶之后，防止焊料从靶材最下端泄露，显著提高装配精度和装配稳定性，大大提高了生产效率。
产业应用性
根据本申请所涉及的溅射靶，有效解决了在靶材应用过程中，随着温度的上升，焊料容易从靶材最下端泄露的问题，实现质量稳定、良品率高、节约成本。
以上所述仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (13)

  1. 一种用于通过溅射法生成薄膜的溅射靶，包括：
    管状衬管，其轴线定义为轴向，径向所在的面与轴向垂直；
    至少一个圆柱形的靶段，布置在管状衬管上，管状衬管沿轴向延伸通过至少一个圆柱形的靶段的总长度的至少90％；
    粘结材料，设置在管状衬管和圆柱形的靶段之间；
    止动构件，用于与所述止动构件相邻的靶段，所述止动构件在管状衬管的轴向端部区域与管状衬管一体形成且沿管状衬管径向突出，并至少围绕管状衬管的圆周的一部分延伸，
    周向的密封构件，其插入止动构件和相邻靶段之间，以防止粘结材料的泄漏。
  2. 根据权利要求1所述的溅射靶，其中，
    所述止动构件围绕管状衬管的圆周连续延伸。
  3. 根据权利要求1所述的溅射靶，其中，所述止动构件为突出的台阶部。
  4. 根据权利要求3所述的溅射靶，其中，所述突出的台阶部为具有两个平行侧壁的突出的脊。
  5. 根据权利要求1所述的溅射靶，其中，所述密封构件是由弹性材料制成的O形圈且被压缩在靶段和止动构件之间。
  6. 根据权利要求1所述的溅射靶，其中，止动构件为具有沿径向突出的唇缘并压靠在止动构件和/或靶段上以提供密封功能的周向构件。
  7. 根据权利要求1所述的溅射靶，其中，
    止动构件是管状衬管的整体零件。
  8. 根据权利要求1所述的溅射靶，其中，止动构件和相邻的靶段形成榫舌-凹槽配合。
  9. 根据权利要求1所述的溅射靶，其中，靶段由金属材料制成。
  10. 根据权利要求9所述的溅射靶，其中，
    金属材料为基于钼和/或钨的材料。
  11. 根据权利要求1所述的溅射靶，其中，
    粘结材料为焊料。
  12. 根据权利要求11所述的溅射靶，其中，
    焊料为铟焊料或铟合金焊料。
  13. 根据权利要求1所述的溅射靶，其特征在于，还包括：
    沿轴向并排设置在管状衬管上的至少两个圆柱形的靶段，
    其中，彼此面对的至少两个圆柱形的靶段的至少两个端部以如下方式彼此形成榫舌-凹槽配合，当沿径向和/或轴向方向观察时，使得一个端部的至少一个榫舌与两个相邻的圆柱形的靶段的相应的另一个端部的至少一个凹槽重叠，上述重叠至少围绕相应的端部的圆周的一部分延伸。
PCT/CN2022/119248 2021-09-16 2022-09-16 溅射靶 WO2023041018A1 (zh)

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