WO2023038487A1 - Réseau de transistors, son procédé de fabrication, et dispositif d'affichage plat le comprenant - Google Patents

Réseau de transistors, son procédé de fabrication, et dispositif d'affichage plat le comprenant Download PDF

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Publication number
WO2023038487A1
WO2023038487A1 PCT/KR2022/013593 KR2022013593W WO2023038487A1 WO 2023038487 A1 WO2023038487 A1 WO 2023038487A1 KR 2022013593 W KR2022013593 W KR 2022013593W WO 2023038487 A1 WO2023038487 A1 WO 2023038487A1
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insulating layer
resin composition
transistor array
layer
pigment
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PCT/KR2022/013593
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English (en)
Korean (ko)
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유선
오현주
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주식회사 헤라켐테크놀러지
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Publication of WO2023038487A1 publication Critical patent/WO2023038487A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to a transistor array, a manufacturing method thereof, and a flat panel display device including the same.
  • LCDs liquid crystal displays
  • OLEDs organic light emitting displays
  • PDP plasma displays panel
  • a flat panel display device is composed of a transistor array and a color filter, and the transistor array (Thin Film Transistor array, TFT array) is used as a circuit board for independently driving each pixel in the flat panel display device.
  • the transistor array includes a scan signal line or gate line that transmits a scan signal, an image signal line or data line that transmits an image signal, a thin film transistor connected to the gate line and the data line, and a thin film transistor connected to the thin film transistor. It consists of a pixel electrode and the like.
  • a transistor array has a matrix formed by crossing gate lines and data lines on a substrate, and a TFT operated by electrical signals of the lines at the intersection of the gate lines and data lines. is formed, the TFT includes an input terminal (Source), an output terminal (Drain), and a semiconductor layer, and an ITO pixel electrode is formed on the output terminal.
  • the color filter applies a black matrix implemented as a photosensitive liquid to increase color purity on the substrate, and RGB pigments are sequentially applied on it to realize one pixel, and the step of the pixel is applied on it. It is manufactured by applying an overcoat for compensating for, and again applying an ITO electrode thereon.
  • the transistor array and the color filter are bonded to each other using rods, and a liquid crystal display device can be implemented by injecting liquid crystal therebetween.
  • a liquid crystal display device is formed as an assembled substrate by assembling it on a large substrate, and the LCD display panel is completed by separating the assembled substrate using a cutter or the like.
  • TFT thin film transistor
  • COT Color Filter On TFT Array
  • a color filter layer including a photosensitive material is coated on a transistor array, the color filter layer is exposed through a mask, and then exposed by developing the color filter layer.
  • Color filter patterns are formed by removing the color filter layer that has been or has not been exposed to light.
  • the color filter pattern is implemented by forming three types of filters, such as a red color filter, a green color filter, and a blue color filter, the same process of coating, exposure, and development is repeated three times to obtain a full-color image.
  • Color filter patterns for displaying may be formed.
  • the present invention provides a method for forming a transistor array capable of efficiently manufacturing a transistor array through a simple process, a transistor array manufactured therefrom, and a flat panel display device including the same.
  • the present invention provides a transistor array manufactured by using a resin composition including a pigment for a color filter and containing a specific siloxane resin.
  • the transistor array of the present invention comprises:
  • the insulating layer is characterized by being formed of a resin composition for an insulating layer containing a resin composition containing a siloxane resin, a functional monomer and a photopolymerization initiator, and a pigment for a color filter, including repeating units represented by Formulas 1 and 2 below. .
  • R 1 to R 4 are each independently hydrogen, (C1-C10)alkyl or (C1-C10)alkoxy;
  • R 11 and R 12 are each independently (C1-C10)alkyl
  • R 13 and R 14 are each independently (C6-C12)aryl
  • p and q are independently of each other an integer from 2 to 10;
  • s and t are 0.5 ⁇ s ⁇ 1.0 in molar ratio; t is 0 ⁇ t ⁇ 0.5.
  • the color filter pigment according to an embodiment of the present invention may be green, blue, or red, and the siloxane resin may have a weight average molecular weight of 5000 to 100,000 g/mol.
  • the protective layer according to an embodiment of the present invention may be formed of the resin composition.
  • R 1 to R 4 are hydrogen or (C1-C4)alkyl;
  • R 11 and R 12 are each independently (C1-C4)alkyl,
  • R 13 and R 14 are independently of each other or (C6-C10)aryl;
  • p and q may be each independently an integer of 2 to 5.
  • the resin composition according to one embodiment of the present invention may include 30 to 70% by weight of a siloxane resin, 0.1 to 10% by weight of a photopolymerization initiator, and the remaining amount of a solvent, based on the total weight of the resin composition, and the photopolymerization initiator is an acylphosphine. It may be an oxide-based compound.
  • the transistor array according to an embodiment of the present invention may further include a transparent insulating layer formed on the insulating layer and a planarization layer on the transparent insulating layer, wherein the planarization layer is for a planarization layer further comprising a thermal initiator in the resin composition.
  • composition, and the transparent insulating layer may be formed of the resin composition.
  • a resin composition containing a siloxane resin containing repeating units represented by Formulas 1 and 2 and a photopolymerization initiator and a composition for an insulating layer containing a pigment for a color filter are applied, exposed, and then developed to form an insulating layer.
  • the method of manufacturing a transistor array according to an embodiment of the present invention may further include exposing a planarization layer by etching a portion of the passivation layer, and forming an ITO electrode to contact the exposed planarization layer.
  • the resin composition containing a red pigment, the resin composition containing a green pigment, and the resin composition containing a blue pigment are applied, respectively, and exposed and developed. It may be to form an insulating layer.
  • the method of manufacturing a transistor array according to an embodiment of the present invention may further include, after forming the insulating layer, preparing a transparent insulating layer by applying the resin composition on the insulating layer.
  • the present invention provides a flat panel display device including a transistor array according to an embodiment of the present invention.
  • an insulating layer having excellent durability, heat resistance, and electrical insulating properties can be manufactured by using a resin composition containing a specific siloxane resin in the insulating layer.
  • the transistor array according to an embodiment of the present invention further includes a color filter pigment, so that a separate color filter layer is not required.
  • the method for manufacturing a transistor array according to an embodiment of the present invention drastically simplifies the process by including a pigment for a color filter in a specific resin composition to form an insulating layer and a color filter layer at once in a simple process to improve productivity and reduce manufacturing cost very advantageous for
  • the method for manufacturing a transistor array according to an embodiment of the present invention does not require a separate resin composition and has excellent durability because a specific resin composition used for the insulating layer can also be employed for the protective layer.
  • the flat panel display device includes the transistor array according to one embodiment of the present invention, and thus has high heat resistance and excellent lifespan characteristics.
  • FIG. 1 is a diagram showing a schematic diagram of a manufacturing process for an insulating layer of a transistor array according to an embodiment of the present invention (101: red pixel, 102: green pixel, 103: blue pixel, 104: insulating layer).
  • FIG. 2 is a diagram showing a schematic diagram of a transistor array manufacturing process according to an embodiment of the present invention (201: substrate, 202: gate electrode (pattern), 203: red pixel, 204: green pixel, 205: blue pixel, 206: 207: planarization layer, 208: source electrode, 209: drain electrode, 210: protective layer, 211: ITO electrode).
  • the present invention provides a transistor array having improved physical properties made of a resin composition for an insulating layer containing a siloxane resin having a specific structure and a pigment for a color filter.
  • the transistor array of the present invention is a transistor array having improved physical properties made of a resin composition for an insulating layer containing a siloxane resin having a specific structure and a pigment for a color filter.
  • the insulating layer is characterized by being formed of a resin composition for an insulating layer containing a resin composition containing a siloxane resin, a functional monomer and a photopolymerization initiator, and a pigment for a color filter, including repeating units represented by Formulas 1 and 2 below. .
  • R 1 to R 4 are each independently hydrogen, (C1-C10)alkyl or (C1-C10)alkoxy;
  • R 11 and R 12 are each independently (C1-C10)alkyl
  • R 13 and R 14 are each independently (C6-C12)aryl
  • p and q are independently of each other an integer from 2 to 10;
  • s and t are 0.5 ⁇ s ⁇ 1.0 in molar ratio; t is 0 ⁇ t ⁇ 0.5.
  • a transistor array according to an embodiment of the present invention includes a siloxane resin including a repeating unit having a zantene skeleton and a repeating unit having a siloxane group, a resin composition including a functional monomer and a photopolymerization initiator, and a color filter pigment for an insulating layer.
  • the transistor array according to an embodiment of the present invention does not require a separate color filter layer by including a color filter pigment in a specific resin composition, thereby simplifying its manufacturing process and being able to be manufactured at low cost, which is very advantageous for commercialization.
  • the resin composition used for the insulating layer and the protective layer of the transistor array according to an embodiment of the present invention includes a siloxane resin including repeating units represented by Chemical Formulas 1 and 2, a functional monomer, and a photopolymerization initiator.
  • R 1 to R 4 are hydrogen or (C1-C4)alkyl;
  • R 11 and R 12 are each independently (C1-C4)alkyl,
  • R 13 and R 14 are independently (C6-C10)aryl;
  • p and q may be each independently an integer of 2 to 5, more preferably R 1 to R 4 are hydrogen or (C1-C3)alkyl;
  • R 11 and R 12 may each independently be (C1-C3)alkyl,
  • R 13 and R 14 may each independently be phenyl, biphenyl, 1-naphthyl or 2-naphthyl, and
  • p and q may be 2 It may be an integer from 4 to 4.
  • s and t are 0.6 ⁇ s ⁇ 0.9; It may be 0.1 ⁇ t ⁇ 0.4, more preferably 0.7 ⁇ s ⁇ 0.9; 0.1 ⁇ t ⁇ 0.2, more preferably 0.8 ⁇ s ⁇ 0.9; It may be 0.1 ⁇ t ⁇ 0.2.
  • R 11 and R 12 may each independently represent methyl, ethyl, or n-propyl, and R 13 and R 14 may represent phenyl.
  • the siloxane resin according to an embodiment of the present invention may have a weight average molecular weight of 5000 to 100,000 g/mol, preferably 10,000 to 100,000 g/mol, and more preferably 20,000 to 100,000 g/mol.
  • the siloxane resin according to an embodiment of the present invention is a hydroxylation polymerization reaction of a monomer that may have a repeating unit of Formula 1 and hydrosiloxanes, which are monomers that may have a repeating unit of Formula 2, in the presence of a catalyst can be manufactured with
  • the siloxane resin according to an embodiment of the present invention may be prepared by polymerizing a monomer that may have a repeating unit of Formula 1 and a monomer that may have a repeating unit of Formula 2 above.
  • it may be prepared by polymerizing a unit of Formula 1-1 and a unit of Formula 2-1 below.
  • R 1 to R 4 , R 11 to R 14 , s and t are the same as defined in Formulas 1 and 2, and p and q are integers from 0 to 8.
  • siloxane resin prepared according to one embodiment of the present invention may be represented by Formula 3 below.
  • R 1 to R 4 , R 11 to R 14 , p, q, s and t are the same as defined in Formulas 1 and 2.
  • the siloxane resin according to an embodiment of the present invention includes both alternating copolymers and random copolymers.
  • the siloxane resin of the present invention may be prepared in the presence of a catalyst, and the catalyst used in this case is not limited, but examples thereof include platinum group metal groups such as platinum, rhodium, and palladium; H 2 PtCl 4 nH 2 O, H 2 PtCl 6 nH 2 O, NaHPtCl 6 nH 2 O, KHPtCl 6 nH 2 O, Na 2 PtCl 6 nH 2 O, K 2 PtCl 4 nH 2 O, PtCl 4 nH 2 O, PtCl 2 , Na 2 HPtCl 4 nH 2 O (in the formula, n is preferably an integer of 0 to 6, particularly preferably 0 or 6) Platinum chloride, chloroplatinic acid and chloride A platinate etc. are mentioned.
  • platinum group metal groups such as platinum, rhodium, and palladium
  • an organic solvent may be used if necessary.
  • the organic solvent for example, hydrocarbon-based organic solvents such as toluene and xylene are preferable.
  • the polymerization temperature is, for example, 40 to 150°C, particularly preferably 80 to 120°C. If the polymerization temperature is too low, it may take a long time to complete polymerization, and if the polymerization temperature is too high, the catalyst may not be activated. Further, the polymerization time depends on the type and amount of the polymer, but is preferably completed within about 0.5 to 10 hours, particularly within 0.5 to 5 hours, in order to prevent moisture from entering the polymerization system. In addition, organic hydrosiloxanes tend to cause disproportionation reactions as side reactions, and since hydroxylation polymerization reactions are generally exothermic reactions, it is preferable to add the organic hydrosiloxanes dropwise.
  • the siloxane resin of the present invention has a specific structure of janten and at the same time has better heat resistance by controlling the content of the substituent of hydroxysiloxanes.
  • the siloxane resin of the present invention may be 30 to 70% by weight, specifically 35 to 65% by weight, more specifically 40 to 60% by weight based on the total weight of the resin composition.
  • the functional monomer included in the resin composition according to an embodiment of the present invention may include one or more monofunctional monomers and polyfunctional monomers.
  • the monomer is a compound having a radical polymerizable group such as a substituted or unsubstituted vinyl group, an acrylate group, a methacrylate group, an allyl group, a styryl group, and the substituted or unsubstituted vinyl group, an acrylate group, or a methacrylate group. and monomers having 1 to 30, preferably 1 to 20, more preferably 1 to 5 groups, allyl groups and styryl groups.
  • the functional monomer according to an embodiment of the present invention includes an aromatic compound having 6 to 20 carbon atoms having an alkenyl group including a vinyl group, such as styrene, ⁇ -methyl styrene, vinyl toluene, vinyl benzyl ether, and vinyl benzyl methyl ether; Methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2hydroxyethyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, hexyl (meth)acrylate, octyl (meth)acrylate, nonyl (meth)acrylate, decanyl (meth)acrylate, undecanyl (meth)acrylate, dodecyl (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate Unsaturated carboxylic acid esters, such as a late and
  • the content of the monofunctional monomer and/or polyfunctional monomer of the present invention may be 1 to 20% by weight, preferably 5 to 15% by weight based on the total weight of the negative photosensitive resin composition.
  • the photopolymerization initiator included in the resin composition of the present invention is, for example, an alkylphenone-based photopolymerization initiator, an acylphosphine oxide-based photopolymerization initiator, an oxime ester-based photopolymerization initiator, a benzophenone-based photopolymerization initiator, an oxanthone-based photopolymerization initiator, an imidazole-based photopolymerization initiator , Benzothiazole-based photopolymerization initiators, benzoxazole-based photopolymerization initiators, carbazole-based photopolymerization initiators, triazine-based photopolymerization initiators, benzoic acid ester-based photopolymerization initiators, phosphorus-based photopolymerization initiators, and inorganic photopolymerization initiators such as titanates, and the like, which are described above. It may contain two or more initiators.
  • alkylphenone-based photopolymerization initiator examples include ⁇ -aminoalkylphenone-based photopolymerization initiators and ⁇ -hydroxyalkylphenone-based photopolymerization initiators.
  • the ⁇ -aminoalkylphenone-based photopolymerization initiator is, for example, 2-methyl-[4-(methylthio)phenyl]-2-morpholinopropan-1-one, 2-dimethylamino-2-(4-methylbenzyl) -1-(4-morpholin-4-yl-phenyl)-butan-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1, etc. there is.
  • Acylphosphine oxide-based photopolymerization initiators include, for example, 2,4,6-trimethylbenzoylphenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, bis(2,6-dimethoxybenzoyl )-(2,4,4-trimethylpentyl)-phosphine oxide and the like.
  • oxime ester photopolymerization initiator examples include 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime and 1,2-octanedione-1-[4-(phenylthio)- 2-(O-benzoyloxime)], 1-phenyl-1,2-butadione-2-(o-methoxycarbonyl)oxime, 1,3-diphenylpropanetrione-2-(o-ethoxy carbonyl) oxime, ethanone-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-1-(0-acetyloxime), and the like.
  • benzophenone-based photopolymerization initiator having an amino group examples include 4,4-bis(dimethylamino)benzophenone and 4,4-bis(diethylamino)benzophenone.
  • benzoic acid ester photopolymerization initiator having an amino group examples include ethyl p-dimethylaminobenzoate, 2-ethylhexyl-p-dimethylaminobenzoate, and ethyl p-diethylaminobenzoate.
  • the photopolymerization initiator is an ⁇ -aminoalkylphenone-based photopolymerization initiator, an acylphosphine oxide-based photopolymerization initiator, an oxime ester-based photopolymerization initiator, a benzophenone-based photopolymerization initiator having an amino group, or a benzoic acid ester having an amino group. It may be a photopolymerization initiator, more preferably an acylphosphine oxide photopolymerization initiator.
  • the content of the photopolymerization initiator in the resin composition according to an embodiment of the present invention may be 0.1% to 10% by weight, preferably 0.5 to 10% by weight, more preferably 1 to 5% by weight based on the total weight of the resin composition. weight percent.
  • the resin composition according to an embodiment of the present invention may further include a solvent in addition to the siloxane resin and the photopolymerization initiator.
  • the solvent is preferably a solvent capable of dissolving the siloxane resin and the photopolymerization initiator.
  • the solvent may have a boiling point of about 100 °C to about 300 °C.
  • the solvent having a boiling point of about 100 ° C to about 300 ° C are water, butyl acetate, butyl propionate, ethyl lactate, methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate, methyl methoxyacetate, ethyl methoxyacetate, methoxyacetate Butyl oxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, methyl 3-oxypropionate, ethyl 3-oxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, 3-ethoxypropionate, 3-e Ethyl oxypropionate, 2-oxymethylpropionate, 2-oxyethylpropionate, 2-oxypropylpropionate, 2-methoxymethylpropionate, 2-me
  • a solvent according to embodiments of the present invention may be a mixture containing 20% by weight of a solvent having a boiling point of about 100 to 300 °C.
  • a solvent having a boiling point of about 100 to 300 °C When the solvent is a mixture, one or more known solvents other than the solvent having a boiling point of about 100 to about 300° C. may be further included.
  • the resin composition for an insulating layer according to an embodiment of the present invention may include a pigment for a color filter in the resin composition according to an embodiment of the present invention, and the color filter pigment may be specifically green, blue, or red.
  • C.I. Pigment Red 7, 14, 48:1, 48:2, 48:3, 48:4, 81:1, 81:2, 81:3, 146, 177, 184, 185, 187, 200, 202, 208, 210, 246, 254, 255, 264, 270, 272, etc. may be used
  • C.I. Pigment Green 7, 10, 36, 37, etc. may be used
  • C.I. Pigment Blue 15:1, 15:2, 15:3, 15:4, 15:6, 16, 80, etc. may be used, and in particular, in the case of a red pigment dispersion composition
  • the organic pigment is C.I. Pigment Red 122, C.I. or Pigment Red 177, C.I. Pigment Red 254.
  • the protective layer according to an embodiment of the present invention may be formed using the resin composition according to an embodiment of the present invention.
  • the transistor array according to an embodiment of the present invention may further include a transparent insulating layer formed on the insulating layer and a planarization layer on the transparent insulating layer.
  • the planarization layer according to an embodiment of the present invention may be made of a composition for a planarization layer further comprising a thermal initiator in the resin composition according to an embodiment of the present invention, and the transparent insulating layer is made of a resin according to an embodiment of the present invention. It can be formed into a composition.
  • thermal initiator according to an embodiment of the present invention can be any thermal initiator that can be recognized by those skilled in the art.
  • FIG. 1 shows a schematic diagram and flow chart for a process of forming an insulating layer of a transistor array according to an embodiment of the present invention.
  • Red, green, and blue pigments for color filters were added to the resin composition according to an embodiment of the present invention, respectively, and applied sequentially on the gate pattern without determining the order.
  • the insulating layer can maintain the same composition over the entire region, and is formed by being divided into red pixels 101, green pixels 102, and blue pixels 103 according to the pigments included in the composition for the insulating layer. After forming each pixel, the insulating layer 104 is finally formed. Since the insulating layer applied as described above has a level difference depending on the viscosity of the pigment, a planarization layer may be applied thereon, and the planarization layer is prepared by adding a thermal initiator to the resin composition according to an embodiment of the present invention. It can be formed using the composition for the planarization layer.
  • FIG. 2 shows a schematic diagram and flow chart of a transistor array according to an embodiment of the present invention.
  • a gate pattern 202 is formed on a substrate 201, an insulating layer 206 including color pixels 203, 204, and 205 is formed thereon, and a planarization layer 207 is formed on the insulating layer. .
  • a protective layer 210 is applied thereon using a resin composition according to an embodiment of the present invention. Specifically, the protective layer 210 is formed by applying the resin composition of the present invention according to a pattern, exposing, and developing.
  • the insulating layer, the planarization layer, and the protective layer according to an embodiment of the present invention use the resin composition of the present invention containing a specific siloxane resin, so that the protective layer surface can maintain a flat surface despite the presence of a level difference between each layer. .
  • the formed protective layer when the ITO electrode 211 is formed to form the color filter, the formed protective layer must be etched so that the planarization layer 207 and the ITO electrode 211 come into contact. In this case, the protective layer 210 is etched. Since the etching rate is greater than the etching rate of the planarization layer 507 below it, the state of the planarization layer 207 before etching should be maintained after the protective layer 210 is etched.
  • the resin composition for the insulating layer in which red, green, and blue pigments for color filters are mixed is sequentially applied on the gate pattern 202 regardless of the order of red, green, and blue, and then exposed and developed to remove the pigments.
  • RGB color pixels 203, 204, and 205 are formed using the included insulating layers, respectively.
  • the insulating layer 506 is finally applied.
  • a transparent insulating layer 601 may be further formed thereon.
  • a planarization layer 207 is applied to planarize the insulating layer on which the color filter is formed as described above.
  • the resin composition of the present invention may be used for the transparent insulating layer and the planarization layer 207, followed by deposition of a-Si:H/n+a-Si:H, a-Si:H pattern
  • the formation of the source/drain pattern (208, 209) and the formation of the transistor channel may be performed in the same manner as in the conventional method.
  • the protective layer 210 may be formed using the resin composition of the present invention.
  • SiNx was formed as a protective layer by a method such as chemical vapor deposition, but the transistor array of the present invention can form the protective layer 210 in a coating process by using the resin composition according to an embodiment of the present invention. It can be formed in a very simple process.
  • a portion of the protective layer 210 is etched to expose the planarization layer 207 , and an ITO electrode 211 is formed to contact the exposed planarization layer 207 .
  • siloxane resin composition according to the present invention will be described in more detail through synthesis examples and examples.
  • the present invention is not limited to the following synthesis and examples, and those skilled in the art will be able to implement the present invention in various other forms without departing from the technical spirit of the present invention. .
  • Siloxane resin 2 was prepared in the same manner as in Example 1, except that dihydrosiloxane compound 2 prepared in Synthesis Examples 2 to 5 was used instead of dihydrosiloxane compound 1 prepared in Synthesis Example 1 in Example 1. And, the weight average molecular weight of each of the prepared siloxane resins 3 to 6 was 18000 g/mol.
  • DPHA Miwonsa's 6-functional photocrosslinking agent
  • TPO 2,4,6-trimethylbenzoyldiphenyl phosphine oxide
  • Red pigment pigment (pigment red 122), green pigment (pigment green 7), and blue pigment (pigment blue 16) were mixed with the resin composition of Examples 3 to 4 with respect to 100 parts by weight of the resin composition, respectively, to form each resin composition for the insulating layer. was manufactured.
  • a transistor array according to an embodiment of the present invention was manufactured using the resin composition of Examples 3 to 4 and the resin composition for an insulating layer of Example 5.
  • a transistor array according to an embodiment of the present invention was manufactured by the method shown in FIGS. 1 and 2 .

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  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Silicon Polymers (AREA)

Abstract

La présente invention concerne un réseau de transistors, un procédé de formation de celui-ci, et un dispositif d'affichage plat le comprenant, le réseau de transistors de la présente invention ayant une couche isolante formée à l'aide d'une composition de résine de couche isolante, un pigment de filtre de couleur est inclus dans une composition de résine spécifique.
PCT/KR2022/013593 2021-09-13 2022-09-13 Réseau de transistors, son procédé de fabrication, et dispositif d'affichage plat le comprenant WO2023038487A1 (fr)

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KR10-2021-0121823 2021-09-13
KR1020210121823A KR20230039013A (ko) 2021-09-13 2021-09-13 트랜지스터 어레이, 이의 제조방법 및 이를 포함하는 평판 디스플레이 장치

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WO2023038487A1 true WO2023038487A1 (fr) 2023-03-16

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KR20110080295A (ko) * 2010-01-05 2011-07-13 주식회사 에이피엠 Ｔｆｔ어레이 계층 구조
KR20130118450A (ko) * 2012-04-20 2013-10-30 주식회사 아이에스엠 크산텐 구조를 포함하는 바인더 수지 및 이를 포함하는 유기절연막 조성물
KR20170029896A (ko) * 2015-09-08 2017-03-16 모멘티브퍼포먼스머티리얼스코리아 주식회사 유기 실록산계 고분자 및 이를 포함하는 감광성 수지 조성물
KR20190111633A (ko) * 2018-03-23 2019-10-02 동우 화인켐 주식회사 경화성 수지 조성물 및 이로부터 형성된 굴절률 정합층

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US8998996B2 (en) 2012-09-20 2015-04-07 Depuy (Ireland) Knee prosthesis system with standard and distal offset joint line

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Publication number Priority date Publication date Assignee Title
KR20020021005A (ko) * 2000-09-12 2002-03-18 카나가와 치히로 유기 실록산계 고분자 화합물 및 광 경화성 수지 조성물및 패턴 형성 방법 및 기판 보호용 피막
KR20110080295A (ko) * 2010-01-05 2011-07-13 주식회사 에이피엠 Ｔｆｔ어레이 계층 구조
KR20130118450A (ko) * 2012-04-20 2013-10-30 주식회사 아이에스엠 크산텐 구조를 포함하는 바인더 수지 및 이를 포함하는 유기절연막 조성물
KR20170029896A (ko) * 2015-09-08 2017-03-16 모멘티브퍼포먼스머티리얼스코리아 주식회사 유기 실록산계 고분자 및 이를 포함하는 감광성 수지 조성물
KR20190111633A (ko) * 2018-03-23 2019-10-02 동우 화인켐 주식회사 경화성 수지 조성물 및 이로부터 형성된 굴절률 정합층

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