WO2023036046A1 - 半导体热处理设备的气体喷射装置及半导体热处理设备 - Google Patents

半导体热处理设备的气体喷射装置及半导体热处理设备 Download PDF

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Publication number
WO2023036046A1
WO2023036046A1 PCT/CN2022/116481 CN2022116481W WO2023036046A1 WO 2023036046 A1 WO2023036046 A1 WO 2023036046A1 CN 2022116481 W CN2022116481 W CN 2022116481W WO 2023036046 A1 WO2023036046 A1 WO 2023036046A1
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Prior art keywords
pipe wall
pipe
air holes
wall
injection device
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PCT/CN2022/116481
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English (en)
French (fr)
Inventor
兰立广
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北京北方华创微电子装备有限公司
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Priority to KR1020247001567A priority Critical patent/KR20240021299A/ko
Publication of WO2023036046A1 publication Critical patent/WO2023036046A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Definitions

  • the invention relates to the field of semiconductor manufacturing, in particular to a gas injection device for semiconductor heat treatment equipment and semiconductor heat treatment equipment.
  • Semiconductor heat treatment equipment such as vertical heat treatment equipment
  • vertical heat treatment equipment is the key equipment for film formation on the surface of semiconductor wafers. Its performance indicators such as process stability, uniformity, and reliability directly affect the electrical indicators and yield of chips.
  • the process gas should be supplied to the position of each wafer as evenly as possible.
  • the gas injection device occupies a large space, and may not be arranged in a processing container with a predetermined size, and the gas injection device is relatively close to the wafer boat, resulting in no gas ejected from the gas injection device. Enough space for uniform mixing, so that the uniformity of gas distribution cannot be guaranteed, which may lead to uneven gas volumes obtained by different wafers, thereby adversely affecting the process results.
  • the present invention aims to solve at least one of the technical problems in the prior art, and proposes a gas injection device for semiconductor heat treatment equipment and semiconductor heat treatment equipment, which can improve the vertical direction of the process gas introduced into the process chamber.
  • the uniformity of the upper distribution can ensure that different wafers can obtain a uniform amount of gas, which in turn can ensure the uniformity of the film thickness of the wafer and the consistency of the process results.
  • a gas injection device for semiconductor heat treatment equipment which includes an air inlet pipe for delivering process gas to the process chamber of the semiconductor heat treatment equipment, and the air inlet pipe includes a first pipe section and a second pipe section.
  • a pipe section wherein the first pipe section is vertically arranged in the process chamber, and the upper end of the first pipe section is closed, and the lower end of the first pipe section is connected to the upper end of the second pipe section, so The lower end of the second pipe section is used to connect with the gas source;
  • the first pipe section includes a first pipe wall and a second pipe wall nested in the first pipe wall, and a buffer space is formed between the inner wall of the first pipe wall and the outer wall of the second pipe wall
  • the inner space of the second pipe wall communicates with the inner space of the second pipe section, wherein a plurality of first air holes are vertically spaced on the first pipe wall, and the first air holes communicate with the buffer space and the process chamber respectively; a plurality of second air holes are provided on the second pipe wall, and the second air holes are respectively connected with the inner space of the second pipe wall and the The buffer space is connected;
  • the change rule of the inner diameter of the second pipe wall in the vertical direction and/or the arrangement rule of the plurality of second air holes satisfy: the process gas flowing into the buffer space through the plurality of second air holes
  • the air output at different positions in the vertical direction is the same.
  • the arrangement rule of the plurality of second air holes includes: the arrangement density of the plurality of second air holes gradually increases from bottom to top.
  • a plurality of the second air holes are arranged in at least one row of second air holes, each second air hole row has a plurality of second air holes arranged at intervals along the vertical direction, and two adjacent air holes The vertical spacing between the second air holes gradually decreases from bottom to top.
  • a plurality of the second air holes are arranged in a row of the second air holes; a plurality of the first air holes are arranged in a row of the first air holes, and the air outlet direction of the second air holes is the same as that of the first air holes.
  • the air outlet direction of the stomata is opposite.
  • the change rule of the inner diameter of the second pipe wall in the vertical direction includes: the inner diameter of the second pipe wall gradually decreases from bottom to top; or,
  • the second pipe wall includes a plurality of straight pipe sections arranged in sequence along the vertical direction, and the inner diameters of the plurality of straight pipe sections gradually decrease from bottom to top.
  • a plurality of first air holes are arranged in multiple rows of first air hole rows along the axial direction of the first tube wall, each first air hole row has a plurality of first air holes, and Orientation interval setting.
  • a carrying device is provided in the process chamber, the carrying device has a plurality of carrying surfaces for carrying the wafer, and the plurality of carrying surfaces are arranged at intervals along the vertical direction;
  • the first pipe wall has partitions corresponding to the intervals between two adjacent bearing surfaces, and at least one first air hole is distributed in the partitions.
  • the heights of the axes of all the first air holes in the partition are the same as the height of the midpoint of the interval in the vertical direction.
  • the pipe wall of the second pipe section is integrated with the second pipe wall, and the inner diameter of the second pipe section is the same as the inner diameter of the second pipe wall, and the first pipe wall
  • the lower end is provided with a first closing part, and the first closing part is sealingly connected with the outer wall of the second pipe wall.
  • the pipe wall of the second pipe section is integrated with the first pipe wall, and the outer diameter and inner diameter of the second pipe section are respectively equal to the outer diameter and inner diameter of the first pipe wall, and the The lower end of the second pipe wall is provided with a second sealing part, and the second sealing part is in sealing connection with the inner wall of the first pipe wall.
  • the value range of the diameter of the first air hole is greater than or equal to 0.1 mm and less than or equal to 40 mm; the value range of the distance between two adjacent first air holes in the vertical direction is greater than or equal to 1mm, and less than or equal to 200mm.
  • the value range of the diameter of the second air hole is greater than or equal to 0.1 mm and less than or equal to 20 mm; the vertical distance between two adjacent second air holes in the same second air hole row is taken as The value range is greater than or equal to 1mm and less than or equal to 500mm.
  • the present invention also provides a semiconductor heat treatment equipment, including a process chamber and a carrying device arranged in the process chamber, the carrying device has a plurality of vertically spaced for carrying
  • the carrying surface of the wafer also includes at least one gas injection device, the gas injection device adopts the above-mentioned gas injection device provided by the present invention, wherein the air inlet pipe is arranged on one side of the carrying device for A process gas is introduced into the process chamber.
  • the gas injection device of the semiconductor heat treatment equipment provided by the present invention satisfies the change rule of the inner diameter of the second pipe wall in the inlet pipe in the vertical direction and/or the arrangement rule of a plurality of second air holes:
  • the process gas flowing into the buffer space from the second air hole has the same gas output at different positions in the vertical direction.
  • the second pipe section passes the process gas into the second pipe wall from bottom to top, it can compensate
  • the pressure loss generated by flowing through each second air hole from bottom to top results in the difference in the gas output of the process gas flowing into the buffer space at different positions in the vertical direction, and at the same time, the inner wall of the first tube wall and the second tube wall
  • the above-mentioned buffer space between the outer walls of the outer walls can mix the process gas evenly and fully, which can effectively improve the uniformity of the vertical distribution of the process gas passing into the process chamber from each first air hole, thereby ensuring that different crystals
  • the circle can obtain a uniform amount of gas, which in turn can ensure the uniformity of the film thickness of the wafer and the consistency of the process results.
  • the double pipe wall structure adopted by the above inlet pipe can reduce the volume and occupy less space in the process chamber, so that it can be applied to more types of process chambers.
  • the semiconductor heat treatment equipment provided by the present invention can ensure that different wafers can obtain a uniform amount of gas by using the above-mentioned gas injection device provided by the present invention, thereby ensuring the uniformity of the thickness of the film formed on the wafer and the consistency of the process results.
  • FIG. 1 is a structural diagram of a gas injection device of a semiconductor heat treatment equipment provided in the first embodiment of the present invention
  • FIG. 2 is an axial sectional view of the gas injection device of the semiconductor heat treatment equipment provided in the first embodiment of the present invention
  • FIG. 3 is a partial cross-sectional view of the gas injection device of the semiconductor heat treatment equipment provided in the first embodiment of the present invention
  • FIG. 4 is an axial sectional view of the gas injection device of the semiconductor heat treatment equipment provided in the second embodiment of the present invention.
  • FIG. 5 is a partial cross-sectional view of the gas injection device of the semiconductor heat treatment equipment provided by the second embodiment of the present invention.
  • Fig. 6 is an axial sectional view of a gas injection device of a semiconductor heat treatment equipment provided in a third embodiment of the present invention.
  • FIG. 7 is another axial cross-sectional view of the gas injection device of the semiconductor heat treatment equipment provided in the third embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a semiconductor heat treatment device provided by a fourth embodiment of the present invention.
  • a gas injection device adopts an inverted U-shaped injection pipe, and a plurality of first air holes are distributed on the two pipe sections on both sides of the bend on the injection pipe, for The process gas is sprayed into the process chamber, wherein the first air holes on the two pipe sections are vertically interlaced to improve the uniformity of the gas output in the vertical direction, but the occupation of the above-mentioned U-shaped injection pipe
  • the space is large, and it may not be able to be arranged in a processing container of a predetermined size, and the above-mentioned U-shaped spray tube is relatively close to the crystal boat, resulting in insufficient space for the gas sprayed from the first air hole on the two tube sections to mix evenly.
  • the uniformity of gas distribution cannot be guaranteed, which may lead to uneven gas volumes obtained by different wafers, thereby adversely affecting the process results.
  • the gas injection device is applied to semiconductor heat treatment equipment, especially vertical heat treatment equipment.
  • An inlet pipe 1 for conveying process gas the inlet pipe 1 includes a first pipe section 11 and a second pipe section 12, wherein the first pipe section 11 is vertically arranged in the process chamber, and the upper end of the first pipe section 11 is closed, and the second pipe section 11 is closed.
  • the lower end of a pipe section 11 is connected to the upper end of a second pipe section 12, and the lower end of the second pipe section 12 is used for connecting with a gas source (not shown in the figure) for supplying process gas.
  • the lower end of the second pipe section 12 runs through the chamber wall of the process chamber, extends to the outside of the process chamber, and is connected to an external gas source.
  • the first pipe section 11 adopts a double pipe wall structure, that is, the first pipe section 11 includes a first pipe wall 111 and a second pipe wall 112 nested in the first pipe wall 111, A buffer space 13 is formed between the inner wall of the first pipe wall 111 and the outer wall of the second pipe wall 112 , and the inner space 14 of the second pipe wall 112 communicates with the inner space of the second pipe section 12 .
  • the pipe wall of the second pipe section 12 is integrated with the above-mentioned second pipe wall 112, and the inner diameter of the second pipe section 12 is the same as the inner diameter of the second pipe wall 112, so that the second pipe section 12 At least a part of the above-mentioned second pipe wall 112 constitutes a continuous straight pipe, so that the inner space 14 of the second pipe wall 112 communicates with the inner space of the second pipe section 12, and by making the inner diameter of the second pipe section 12 and The inner diameters of the second tube walls 112 are the same, which can ensure that the gas flow in the second tube section 12 can flow smoothly into the inner space 14 of the second tube wall 112 without gas flow disturbance or pressure loss, thereby contributing to process gas flow. Fast flow to the upper end of the second pipe wall 112 to improve the intake efficiency.
  • first closing portion 15 is, for example, an end wall integrally formed with the first pipe wall 111 , and an opening is formed on the end wall for the straight pipe formed by the second pipe section 12 and the second pipe wall 112 to pass through.
  • the upper end of the first tube wall 111 has an end wall to ensure that the top of the buffer space 13 is closed.
  • the upper end of the second pipe wall 112 abuts against the end wall to ensure that the top of the inner space 14 of the second pipe wall 112 is also closed.
  • a separate end wall may also be provided on the upper end of the second pipe wall 112 to close the top of the internal space 14 .
  • the above-mentioned gas inlet pipe 1 adopts a double pipe wall structure, which can reduce the volume and reduce the occupied space in the process chamber, so that it can be applied to more types of process chambers.
  • a plurality of first air holes 21 are vertically spaced on the first pipe wall 111 , and optionally, the first air holes 21 are evenly distributed on the first pipe wall 111 .
  • the first air hole 21 communicates with the buffer space 13 and the process chamber respectively;
  • a plurality of second air holes 22 are arranged on the second tube wall 112, and the second air hole 22 is connected with the inner space 14 of the second tube wall 112 and the buffer space respectively.
  • the spaces 13 are connected.
  • the gas flow direction is shown by the arrow in Figure 2, the process gas provided by the gas source flows into the inner space 14 of the second pipe wall 112 through the inner space of the second pipe section 12, and flows from bottom to top in the space 14, and then The process gas flows into the buffer space 13 through each second air hole 22 ; after the process gas is uniformly and fully mixed in the buffer space 13 , it finally flows into the process chamber through each first air hole 21 .
  • uniform and sufficient mixing of the process gas by means of the above-mentioned buffer space 13 can improve the vertical distribution uniformity of the process gas passing into the process chamber from each first air hole 21 to a certain extent. Moreover, since the top of the second pipe wall 112 is closed, the process gas can only flow into the buffer space 13 through a plurality of second air holes 22 on the pipe wall, and the gas outlet from the side of the pipe wall is more conducive to the process than the gas outlet from the top. The vertical diffusion of the gas in the buffer space 13 can further promote the uniform and sufficient mixing of the process gas.
  • the arrangement of the plurality of second air holes 22 satisfies: the process gas flowing into the buffer space 13 through the plurality of second air holes 22 has the same output volume at different positions in the vertical direction. That is to say, the above-mentioned difference in air output is compensated by setting the arrangement rules of the plurality of second air holes 22 . In this way, it can be ensured that different wafers can obtain a uniform amount of gas, which in turn can ensure the uniformity of the thickness of the film formed on the wafer and the consistency of the process results.
  • the arrangement rule of the plurality of second air holes 22 includes: the arrangement density of the plurality of second air holes 22 gradually increases from bottom to top.
  • the arrangement density of the so-called multiple second air holes 22 refers to the quantity of the second air holes 22 arranged in the unit area on the second pipe wall 112, the larger the number of the second air holes 22 arranged in the unit area, the unit The larger the air output of the area corresponding to the area; otherwise, the smaller it is. Based on this, by gradually increasing the arrangement density of the plurality of second air holes 22 from bottom to top, it can play a role in compensating the gas output, so as to improve the process gas flowing into the buffer space 13 at different positions in the vertical direction. The uniformity of the air output.
  • the plurality of second air holes 22 are arranged in at least one row of second air hole rows, and each row of second air hole rows has A plurality of second air holes 22 are arranged at intervals along the axial direction (ie, vertical direction) of the second tube wall 112 , and the vertical distance between two adjacent second air holes 22 gradually decreases from bottom to top.
  • a plurality of second air holes 22 are arranged in a row of second air holes.
  • a plurality of second air holes 22 are arranged in a row of second air hole rows
  • a plurality of first air holes 21 are arranged in a row of first air hole rows
  • the air outlet direction of the second air holes 22 is the same as
  • the air outlet direction of the first air hole 21 is opposite, that is, the angle between the axis of the second air hole 22 and the axis of the first air hole 21 in the horizontal plane is 180°, that is to say, the second air hole column is located at the opposite side of the second tube wall 112 One side of the first air hole row.
  • the path for the process gas to flow from the second gas hole 22 to the first gas hole 21 through the buffer space 13 is the longest, thereby further promoting uniform and sufficient mixing of the process gas.
  • the central angle between the axis of the second air hole 22 and the axis of the first air hole 21 in the horizontal plane can be freely set within the range of 0°-180°, as long as it can be ensured that each first air hole The uniformity of the vertical distribution of the process gas passing through the gas holes 21 into the process chamber is sufficient.
  • a plurality of second air holes 22 can also be arranged in one or more rows of second air hole rows, and the multiple rows of second air hole rows can be located on the side of the second pipe wall 112 away from the first air hole rows. Arranged at intervals in the circumferential direction in a semicircular area (range of 0°-180°).
  • a plurality of first air holes 21 can also be arranged in one or more rows of first air hole columns, and multiple rows of first air hole columns can be formed in the semicircular area (0°-180°) of the first tube wall 111 away from the second air hole columns. range) along the circumferential intervals.
  • the way to realize the arrangement density of the plurality of second air holes 22 gradually increases from bottom to top is not limited to the method adopted in the above-mentioned embodiment.
  • the plurality of second air holes 22 can also be Arrangement in any other manner, such as random distribution, as long as the arrangement density of the plurality of second air holes 22 can gradually increase from bottom to top.
  • the process chamber is provided with a carrying device, the carrying device has a plurality of carrying surfaces for carrying the wafer, and the multiple carrying surfaces are arranged at intervals along the vertical direction; the first tube wall 111 has a partition corresponding to the interval between two adjacent bearing surfaces, and at least one first air hole 21 is distributed in the partition.
  • the carrying device in the process chamber is a wafer boat (such as the wafer boat 105 shown in FIG. The surface is the bearing surface mentioned above.
  • the height of the axis of at least one of the first air holes 2 in the partition of the first tube wall 111 and the distance between the corresponding two bearing surfaces are in the middle of the vertical direction.
  • the point heights are the same.
  • the heights of the axes of all the first air holes 21 in the partition of the first pipe wall 111 are the same as the midpoint heights of the intervals between two adjacent bearing surfaces, that is to say, The axes of all the first air holes 21 in the same partition are located at the same height, and are at the same height as the midpoint of the interval between each adjacent two bearing surfaces, so that the first air hole 21 can be connected to the adjacent two bearing surfaces.
  • the distances between the surfaces are equal, so that the process gas flowing out through the first gas hole 21 can diffuse toward the two adjacent carrying surfaces on the same path, thereby further improving the uniformity of the amount of gas obtained by different wafers.
  • the value range of the diameter of the first air holes 21 is greater than or equal to 0.1 mm and less than or equal to 40 mm; the value range of the distance between two adjacent first air holes 21 in the vertical direction It is greater than or equal to 1mm and less than or equal to 200mm.
  • the value range of the diameter of the second air holes 22 is greater than or equal to 0.1 mm and less than or equal to 20 mm; the vertical distance between two adjacent second air holes 22 in the same second air hole column The value range of the spacing is greater than or equal to 1 mm and less than or equal to 500 mm.
  • the gas injection device provided by this embodiment also includes an air inlet pipe 3, and the air inlet pipe 3 includes a first pipe section 31 and a second pipe section 32.
  • the first pipe section 31 is vertically arranged in the process chamber, and the upper end of the first pipe section 31 is closed, the lower end of the first pipe section 31 is connected with the upper end of the second pipe section 32, and the lower end of the second pipe section 32 is used for connecting with A gas source (not shown) connection for supplying process gas.
  • the first pipe section 31 adopts a double pipe wall structure, that is, the first pipe section 31 includes a first pipe wall 311 and a second pipe wall 312 nested in the first pipe wall 311, and the inner wall of the first pipe wall 311 A buffer space 33 is formed between the outer wall of the second pipe wall 312 , and the inner space 34 of the second pipe wall 312 communicates with the inner space of the second pipe section 32 .
  • the pipe wall of the above-mentioned second pipe section 32 is integrated with the first pipe wall 311, and the outer diameter and the inner diameter of the second pipe section 32 are respectively equal to the outer diameter and the inner diameter of the first pipe wall 311, like this, the first pipe wall 311 At least a part of the two pipe sections 32 and the above-mentioned first pipe wall 311 constitute a continuous straight pipe, and the second pipe wall 312 is arranged inside the first pipe wall 311, and its bottom end is open so that its inner space 34 It can communicate with the inner space of the second pipe section 12 .
  • the volume can be further reduced and the occupied space in the process chamber can be reduced, so that it can be applied to more types of process chambers in the room.
  • a second closing portion 35 is provided at the lower end of the second pipe wall 312, and the second closing portion 35 is sealingly connected with the inner wall of the first pipe wall 311, so as to ensure that the bottom of the buffer space 33 is closed.
  • the first closing part 35 is, for example, an annular flange integrally formed with the second pipe wall 312, and the annular flange is against the inner wall of the first pipe wall 311 to ensure that the bottom of the buffer space 33 is closed.
  • first air holes 41 evenly distributed along the vertical direction, and the first air holes 41 communicate with the buffer space 33 and the process chamber respectively;
  • a second air hole 42, the second air hole 32 communicates with the inner space 34 of the second pipe wall 312 and the buffer space 33 respectively.
  • the process gas provided by the gas source flows into the inner space 34 of the second pipe wall 312 through the second pipe section 32 , flows in the inner space 34 from bottom to top, and then flows into the buffer space 33 through each second air hole 42 ; After the process gas is uniformly and fully mixed in the buffer space 33 , it finally flows into the process chamber through each first air hole 41 .
  • the gas injection device provided by this embodiment also includes an air inlet pipe 5, and this air inlet pipe 5 includes a first pipe section 51 and a second pipe section 52, wherein the first pipe section 51 is vertically arranged in the process chamber, and the upper end of the first pipe section 51 is closed, the lower end of the first pipe section 51 is connected with the upper end of the second pipe section 52, and the lower end of the second pipe section 52 is used for supplying process gas
  • the gas source (not shown in the figure) is connected.
  • the first pipe section 51 adopts a double pipe wall structure, that is, the first pipe section 51 includes a first pipe wall 511 and a second pipe wall 512 nested in the first pipe wall 511, and the inner wall of the first pipe wall 511 A buffer space 53 is formed between the outer wall of the second pipe wall 512 , and the inner space 54 of the second pipe wall 512 communicates with the inner space of the second pipe section 52 .
  • the inner diameter of the second pipe wall 512 in the vertical direction satisfies: the process gas flowing into the buffer space 53 through the plurality of second air holes 62 has the same output volume at different positions in the vertical direction. That is to say, the above-mentioned difference in air output is compensated by setting the change rule of the inner diameter of the second pipe wall 512 in the vertical direction. In this way, it can be ensured that different wafers can obtain a uniform amount of gas, which in turn can ensure the uniformity of the thickness of the film formed on the wafer and the consistency of the process results.
  • the variation rule of the inner diameter of the second pipe wall 512 in the vertical direction includes: the inner diameter of the second pipe wall 512 gradually decreases from bottom to top.
  • the second pipe wall 512 shown in FIG. 6 is in the shape of a cone. Since the inner diameter of the second pipe wall 512 is smaller, the flow velocity of the gas passing through is greater, so reducing the inner diameter of the second pipe wall 512 from bottom to top can play a role in compensating the gas output, so as to improve the flow into the buffer space 13 The uniformity of the output volume of the process gas at different positions in the vertical direction.
  • the intake pipe 5' also includes a first pipe section 51' and a second pipe section 52, wherein the first pipe section 51' includes a first pipe section wall 511 and the second pipe wall 512', and the only difference is: the change rules of the inner diameter of the second pipe wall 512 in the vertical direction include: the second pipe wall 512' includes a plurality of straight pipe sections arranged in sequence along the vertical direction, And the inner diameters of the multiple straight pipe sections gradually decrease from bottom to top. This can also reduce the inner diameter of the second tube wall 512 from bottom to top, so as to be able to compensate for the gas output, thereby improving the uniformity of the gas output at different positions in the vertical direction of the process gas flowing into the buffer space 13 sex.
  • first air holes 61 evenly distributed along the vertical direction, and the first air holes 61 communicate with the buffer space 53 and the process chamber respectively;
  • a second air hole 62 communicates with the inner space 54 of the second pipe wall 512 and the buffer space 53 respectively.
  • the process gas provided by the gas source flows into the inner space 54 of the second pipe wall 512 through the second pipe section 52, flows from bottom to top in the space 54, and then flows into the buffer space 53 through each second air hole 62; After the gases are uniformly and fully mixed in the buffer space 53 , they finally flow into the process chamber through the first air holes 61 .
  • the pipe wall of the second pipe section 52 is integrally connected with the second pipe wall 512 (or the second pipe wall 512'), however, the present invention is not limited thereto.
  • the same structure as that of the above-mentioned second embodiment may also be adopted, that is, the pipe wall of the above-mentioned second pipe section 52 is integrally connected with the first pipe wall 511 .
  • the above-mentioned various embodiments provide the gas injection device for semiconductor heat treatment equipment, which makes the inner diameter of the second pipe wall in the inlet pipe change regularly in the vertical direction and/or the arrangement of a plurality of second air holes
  • the layout rule is satisfied: the process gas flowing into the buffer space through multiple second air holes has the same gas output at different positions in the vertical direction, and the process gas is passed from bottom to top to the inside of the second pipe wall in the second pipe section
  • the process gas flows through each second air hole from bottom to top, the pressure loss caused by the process gas flowing into the buffer space at different positions in the vertical direction can be compensated.
  • the first tube wall The above-mentioned buffer space between the inner wall of the pipe wall and the outer wall of the second pipe wall can mix the process gas evenly and fully, which can effectively improve the uniformity of the vertical distribution of the process gas passing into the process chamber from each first air hole In order to ensure that different wafers can obtain a uniform amount of gas, which in turn can ensure the uniformity of the film thickness of the wafer and the consistency of the process results.
  • the double pipe wall structure adopted by the above inlet pipe can reduce the volume and occupy less space in the process chamber, so that it can be applied to more types of process chambers.
  • this embodiment provides a semiconductor heat treatment equipment 100, taking vertical heat treatment equipment as an example, it includes an outer tube 101, an inner tube 102 nested inside it, and a heater 104 sleeved around the outer tube 101 , wherein, the interior of the inner tube 102 constitutes a process chamber, and the carrying device in the process chamber has a plurality of carrying surfaces for carrying wafers arranged at intervals along the vertical direction, the carrying device is for example It is a wafer boat 105, which can carry a plurality of wafers 106 in the vertical direction, and the surface on the wafer boat for carrying the wafers 106 is the above-mentioned carrying surface.
  • the semiconductor heat treatment equipment 100 also includes at least one gas injection device.
  • the gas injection device adopts the gas injection device provided by the above-mentioned embodiments.
  • the gas inlet pipe 1 provided in the first embodiment is taken as an example, as shown in FIG. 8 As shown, the inlet pipe 1 is arranged on one side of the wafer boat 105, and is used for introducing process gas into the process chamber.
  • the number of the above-mentioned gas injection devices can be designed according to the type of gas required by the process.
  • the number of gas injection devices can be at least two, Specifically, it may include a gas injection device for feeding O2 and other oxidizing gases into the process chamber, and a gas injection device for feeding H2 and other reducing gases into the process chamber.
  • it may also include a gas injection device for introducing an inert gas such as N2 into the process chamber.
  • a first air hole 21 is distributed in a partition corresponding to the interval between two adjacent bearing surfaces on the first pipe wall 111 .
  • the height of the axis of the first air hole 21 is the same as the midpoint height of the interval between each adjacent two bearing surfaces in the vertical direction, so that the distance between the first air hole 21 and the adjacent two bearing surfaces can be made Therefore, the diffusion path of the process gas flowing out through the first gas hole 21 toward two adjacent carrying surfaces can be the same, and the uniformity of the amount of gas obtained by different wafers 106 can be further improved.
  • an exhaust slit 103 is provided on the side of the inner pipe 102 away from the intake pipe 1 , and at the bottom of the outer tube 101 , at a position opposite to the exhaust slit 103
  • An exhaust channel 107 is provided at the position, and the gas in the process chamber can be exhausted through the exhaust slit 103 and the exhaust channel 107 in sequence.
  • the semiconductor heat treatment equipment provided in this embodiment can ensure that different wafers can obtain a uniform amount of gas by using the gas injection device provided in each of the above-mentioned embodiments, thereby ensuring the uniformity of the thickness of the film formed on the wafer and the consistency of the process results .

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Abstract

提供一种半导体热处理设备的气体喷射装置及半导体热处理设备（100），该装置包括进气管（1，3，5），第一管段（11，31，51）包括第一管壁（111，311，511）和嵌套在第一管壁（111，311，511）中的第二管壁（112，312，512），且第一管壁（111，311，511）的内壁与第二管壁（112，312，512）的外壁之间构成缓冲空间（13，33，53）；在第一管壁（111，311，511）上沿竖直方向均匀分布有多个第一气孔（21，41，61），第一气孔（21，41，61）分别与缓冲空间（13，33，53）和工艺腔室相连通；在第二管壁（112，312，512）上设置有多个第二气孔（22，42，62），第二气孔（22，42，62）分别与第二管壁（112，312，512）的内部空间（14，34，54）和缓冲空间（13，33，53）相连通；第二管壁（112，312，512）的内径在竖直方向上的变化规则和/或多个第二气孔（22，42，62）的排布规则满足：使经由多个第二气孔（22，42，62）流入缓冲空间（13，33，53）中的工艺气体在竖直方向上不同位置处的出气量相同。可以保证不同晶圆（106）能够获得均匀的气体量，进而可以保证晶圆（106）成膜的厚度均匀性及工艺结果一致性。

Description

半导体热处理设备的气体喷射装置及半导体热处理设备 技术领域
本发明涉及半导体制造领域，具体地，涉及一种半导体热处理设备的气体喷射装置及半导体热处理设备。
背景技术
半导体热处理设备，例如立式热处理设备，作为在半导体晶圆表面成膜的关键设备，其工艺稳定性、均匀性、可靠性等性能指标，直接影响着芯片的电性指标及良率。尤其在将立式热处理设备应用于膜层沉积工艺时，为了保证晶圆间的膜厚分布均匀，应尽可能均匀地向各晶圆所在位置处供给工艺气体。
现有的立式热处理设备中，气体喷射装置的占用空间较大，可能无法配置于预先确定好大小的处理容器内，而且气体喷射装置距离晶舟较近，导致气体喷射装置喷出的气体没有足够的空间均匀混合，从而无法保证气体分布均匀性，进而可能导致不同晶圆获得的气体量不均匀，从而对工艺结果产生不良的影响。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种半导体热处理设备的气体喷射装置及半导体热处理设备，其可以提高向工艺腔室中通入的工艺气体在竖直方向上分布的均匀性，从而可以保证不同晶圆能够获得均匀的气体量，进而可以保证晶圆成膜的厚度均匀性及工艺结果一致性。
为实现本发明的目的而提供一种半导体热处理设备的气体喷射装置，包 括用于向所述半导体热处理设备的工艺腔室中输送工艺气体的进气管，所述进气管包括第一管段和第二管段，其中，所述第一管段竖直设置在所述工艺腔室中，且所述第一管段的上端是封闭的，所述第一管段的下端与所述第二管段的上端连接，所述第二管段的下端用于与气源连接；
所述第一管段包括第一管壁和嵌套在所述第一管壁中的第二管壁，且所述第一管壁的内壁与所述第二管壁的外壁之间构成缓冲空间；所述第二管壁的内部空间与所述第二管段的内部空间相连通，其中，在所述第一管壁上沿竖直方向间隔设置有多个第一气孔，所述第一气孔分别与所述缓冲空间和所述工艺腔室相连通；在所述第二管壁上设置有多个第二气孔，所述第二气孔分别与所述第二管壁的内部空间和所述缓冲空间相连通；
所述第二管壁的内径在竖直方向上的变化规则和/或多个所述第二气孔的排布规则满足：使经由多个所述第二气孔流入所述缓冲空间中的工艺气体在竖直方向上不同位置处的出气量相同。
可选的，多个所述第二气孔的排布规则包括：多个所述第二气孔的排布密度由下而上逐渐增大。
可选的，多个所述第二气孔排成至少一列第二气孔列，每一列第二气孔列中有多个所述第二气孔，且沿竖直方向间隔设置，并且相邻两个所述第二气孔之间的竖直间距由下而上逐渐减小。
可选的，多个所述第二气孔排成一列所述第二气孔列；多个所述第一气孔排成一列第一气孔列，且所述第二气孔的出气方向与所述第一气孔的出气方向相反。
可选的，所述第二管壁的内径在竖直方向上的变化规则包括：所述第二管壁的内径由下而上逐渐减小；或者，
所述第二管壁包括沿竖直方向依次设置的多个直管段，且多个所述直管段的内径由下而上逐渐减小。
可选的，多个所述第一气孔沿所述第一管壁的轴向排成多列第一气孔列，每一列第一气孔列中有多个所述第一气孔，且沿竖直方向间隔设置。
可选的，所述工艺腔室中设置有承载装置，所述承载装置具有多个用于承载晶圆的承载面，多个所述承载面沿所述竖直方向间隔设置；
所述第一管壁上具有与各个相邻两个所述承载面之间的间隔相对应的分区，所述分区中分布有至少一个所述第一气孔。
可选的，所述分区中的所有的所述第一气孔的轴线的高度均与所述间隔在所述竖直方向上的中点高度相同。
可选的，所述第二管段的管壁与所述第二管壁连为一体，且所述第二管段的内径与所述第二管壁的内径相同，并且所述第一管壁的下端设置有第一封闭部，所述第一封闭部与所述第二管壁的外壁密封连接。
可选的，所述第二管段的管壁与所述第一管壁连为一体，且所述第二管段的外径和内径分别等于所述第一管壁的外径和内径，并且所述第二管壁的下端设置有第二封闭部，所述第二封闭部与所述第一管壁的内壁密封连接。
可选的，所述第一气孔的直径的取值范围为大于等于0.1mm，且小于等于40mm；竖直方向上相邻两个所述第一气孔之间的间距的取值范围为大于等于1mm，且小于等于200mm。
可选的，所述第二气孔的直径的取值范围为大于等于0.1mm，且小于等于20mm；同一列第二气孔列中相邻两个所述第二气孔之间的竖直间距的取值范围为大于等于1mm，且小于等于500mm。
作为另一个技术方案，本发明还提供一种半导体热处理设备，包括工艺腔室和设置在所述工艺腔室中的承载装置，所述承载装置具有沿竖直方向间隔设置的多个用于承载晶圆的承载面，还包括至少一个气体喷射装置，所述气体喷射装置采用本发明提供的上述气体喷射装置，其中，所述进气管设置在所述承载装置的一侧，用于向所述工艺腔室中通入工艺气体。
本发明具有以下有益效果：
本发明提供的半导体热处理设备的气体喷射装置，其通过使进气管中的第二管壁的内径在竖直方向上的变化规则和/或多个第二气孔的排布规则满足：使经由多个第二气孔流入缓冲空间中的工艺气体在竖直方向上不同位置处的出气量相同，在第二管段由下而上向第二管壁的内部通入工艺气体时，可以补偿因工艺气体由下而上流经各个第二气孔产生的压强损失，而导致的流入缓冲空间中的工艺气体在竖直方向上不同位置处的出气量差异，同时借助第一管壁的内壁与第二管壁的外壁之间的上述缓冲空间对工艺气体进行均匀且充分地混合，可以有效提高自各个第一气孔通入工艺腔室中的工艺气体在竖直方向上分布的均匀性，从而可以保证不同晶圆能够获得均匀的气体量，进而可以保证晶圆成膜的厚度均匀性及工艺结果一致性。此外，上述进气管采用的双管壁结构，可以减小体积，减少在工艺腔室中的占用空间，从而可以应用到更多种类的工艺腔室中。
本发明提供的半导体热处理设备，其通过采用本发明提供的上述气体喷射装置，可以保证不同晶圆能够获得均匀的气体量，进而可以保证晶圆成膜的厚度均匀性及工艺结果一致性。
附图说明
图1为本发明第一实施例提供的半导体热处理设备的气体喷射装置的结构图；
图2为本发明第一实施例提供的半导体热处理设备的气体喷射装置的轴向截面图；
图3为本发明第一实施例提供的半导体热处理设备的气体喷射装置的局部剖视图；
图4为本发明第二实施例提供的半导体热处理设备的气体喷射装置的轴向截面图；
图5为本发明第二实施例提供的半导体热处理设备的气体喷射装置的局部剖视图；
图6为本发明第三实施例提供的半导体热处理设备的气体喷射装置的一种轴向截面图；
图7为本发明第三实施例提供的半导体热处理设备的气体喷射装置的另一种轴向截面图；
图8为本发明第四实施例提供的半导体热处理设备的结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的半导体热处理设备的气体喷射装置及半导体热处理设备进行详细描述。
相关技术的立式热处理设备中，一种气体喷射装置采用倒置的U形喷射管，且在该喷射管上位于弯折处两侧的两个管段上均分布有多个第一气孔，用以向工艺腔室中喷出工艺气体，其中，两个管段上的第一气孔在竖直方向上相互交错，以提高出气量在竖直方向上的均匀性，但是，上述U形喷射管的占用空间较大，可能无法配置于预先确定好大小的处理容器内，而且上述U形喷射管距离晶舟较近，导致由两个管段上的第一气孔喷出的气体没有足够的空间均匀混合，从而无法保证气体分布均匀性，进而可能导致不同晶圆获得的气体量不均匀，从而对工艺结果产生不良的影响。
第一实施例
为了解决上述问题，请参阅图1，本实施例提供的气体喷射装置，其应用于半导体热处理设备，尤其是立式热处理设备，该气体喷射装置包括用于向该半导体热处理设备的工艺腔室中输送工艺气体的进气管1，该进气管1包括第一管段11和第二管段12，其中，第一管段11竖直设置在工艺腔室中，且第一管段11的上端是封闭的，第一管段11的下端与第二管段12的上端连 接，第二管段12的下端用于与用于提供工艺气体的气源(图中未示出)连接。可选的，第二管段12的下端贯穿工艺腔室的腔室壁，延伸至工艺腔室的外部，并与外部的气源连接。
请一并参阅图2和图3，第一管段11采用双管壁结构，即，第一管段11包括第一管壁111和嵌套在该第一管壁111中的第二管壁112，且第一管壁111的内壁与第二管壁112的外壁之间构成缓冲空间13，并且，第二管壁112的内部空间14与第二管段12的内部空间相连通。
在一些可选的实施例中，第二管段12的管壁与上述第二管壁112连为一体，且第二管段12的内径与第二管壁112的内径相同，这样，第二管段12的至少一部分与上述第二管壁112构成了一个连续的直管道，以使第二管壁112的内部空间14与第二管段12的内部空间相连通，而且通过使第二管段12的内径与第二管壁112的内径相同，可以保证第二管段12中的气流能够平稳地流动至第二管壁112的内部空间14中，而不会产生气流扰动或压强损失，从而有助于工艺气体快速流动至第二管壁112的上端，提高进气效率。
并且，第一管壁111的下端设置有第一封闭部15，该第一封闭部15与第二管壁112的外壁密封连接，从而保证缓冲空间13的底部是封闭的。第一封闭部15例如为与第一管壁111一体成型的端壁，该端壁上形成有供第二管段12与第二管壁112构成的直管道穿过的开口。
在一些可选的实施例中，如图2所示，第一管壁111的上端具有端壁，以保证缓冲空间13的顶部是封闭的。而且，第二管壁112的上端与该端壁相抵，以保证第二管壁112的内部空间14的顶部也是封闭的。当然，在实际应用中，也可以在第二管壁112的上端单独设置端壁，以封闭内部空间14的顶部。
上述进气管1通过采用的双管壁结构，可以减小体积，减少在工艺腔室中的占用空间，从而可以应用到更多种类的工艺腔室中。
其中，在第一管壁111上沿竖直方向间隔设置有多个第一气孔21，可选的，该第一气孔21在第一管壁111上均匀分布。第一气孔21分别与缓冲空间13和工艺腔室相连通；在第二管壁112上设置有多个第二气孔22，该第二气孔22分别与第二管壁112的内部空间14和缓冲空间13相连通。气流方向如图2中的箭头所示，由气源提供的工艺气体经由第二管段12的内部空间流入第二管壁112的内部空间14中，并在空间14中由下而上流动，然后经由各个第二气孔22流入缓冲空间13中；工艺气体在缓冲空间13中进行均匀且充分的混合之后，最后经由各个第一气孔21流入工艺腔室中。
工艺气体在内部空间14中由下而上流动的过程中，每经过第二气孔22时，会有一部分工艺气体自该第二气孔22流出，导致内部空间14中的气流会产生一定的压强损失，且越向上流动，压强损失越大，从而在多个第二气孔22竖直方向上等间距设置的前提下，流入缓冲空间13中的工艺气体在竖直方向上不同位置处的出气量存在差异，即，出气量由下而上逐渐减小。为此，借助上述缓冲空间13对工艺气体进行均匀且充分的混合，可以在一定程度上提高自各个第一气孔21通入工艺腔室中的工艺气体在竖直方向上分布的均匀性。而且，由于第二管壁112的顶部是封闭的，工艺气体只能经由管壁上的多个第二气孔22流入缓冲空间13中，从管壁一侧出气相对于顶端出气，更有利于工艺气体在缓冲空间13中竖直方向上的扩散，从而可以进一步促进工艺气体进行均匀且充分的混合。
在此基础上，为了补偿因内部空间14中的气流产生的压强损失造成的流入缓冲空间13中的工艺气体在竖直方向上不同位置处的出气量的差异，多个第二气孔22的排布规则满足：使经由多个第二气孔22流入缓冲空间13中的工艺气体在竖直方向上不同位置处的出气量相同。也就是说，通过设定多个第二气孔22的排布规则来补偿上述出气量的差异。由此，可以保证不同晶圆能够获得均匀的气体量，进而可以保证晶圆成膜的厚度均匀性及工艺结 果一致性。
在一些可选的实施例中，多个第二气孔22的排布规则包括：多个第二气孔22的排布密度由下而上逐渐增大。所谓多个第二气孔22的排布密度，是指第二管壁112上单位面积中排布的第二气孔22的数量，单位面积中排布的第二气孔22的数量越大，该单位面积对应区域的出气量越大；反之，则越小。基于此，通过使多个第二气孔22的排布密度由下而上逐渐增大，可以起到补偿出气量的作用，以提高流入缓冲空间13中的工艺气体在竖直方向上不同位置处的出气量的均匀性。
实现多个第二气孔22的排布密度由下而上逐渐增大的方式可以有多种，例如，多个第二气孔22排成至少一列第二气孔列，每一列第二气孔列中有多个第二气孔22，且沿第二管壁112的轴向(即，竖直方向)间隔设置，并且相邻两个第二气孔22之间的竖直间距由下而上逐渐减小。例如，图2中多个第二气孔22排成一列第二气孔列。
作为一个优选的实施例，如图2所示，多个第二气孔22排成一列第二气孔列，多个第一气孔21排成一列第一气孔列，且第二气孔22的出气方向与第一气孔21的出气方向相反，即，第二气孔22的轴线与第一气孔21的轴线在水平面内的夹角为180°，也就是说，第二气孔列位于第二管壁112的背离第一气孔列一侧。这样，可以使工艺气体自第二气孔22经过缓冲空间13流向第一气孔21的路径最长，从而可以进一步促进工艺气体进行均匀且充分的混合。
需要说明的是，在实际应用中，第二气孔22的轴线与第一气孔21的轴线在水平面内的中心角可以在0°-180°的范围内自由设定，只要能够保证自各个第一气孔21通入工艺腔室中的工艺气体在竖直方向上分布的均匀性即可。
还需要说明的是，在实际应用中，多个第二气孔22还可以排成一列或 多列第二气孔列，且多列第二气孔列可以在第二管壁112的背离第一气孔列的半圆区域(0°-180°的范围)内沿周向间隔排列。并且，多个第一气孔21也可以排成一列或多列第一气孔列，且多列第一气孔列可以在第一管壁111的背离第二气孔列的半圆区域(0°-180°的范围)内沿周向间隔排列。
另外需要说明的是，实现多个第二气孔22的排布密度由下而上逐渐增大的方式并不局限于上述实施例采用的方式，在实际应用中，多个第二气孔22还可以采用其他任意方式排布，例如随机分布，只要可以实现多个第二气孔22的排布密度由下而上逐渐增大即可。
在一些可选的实施例中，工艺腔室中设置有承载装置，该承载装置具有多个用于承载晶圆的承载面，多个承载面沿所述竖直方向间隔设置；第一管壁111上具有与各个相邻两个承载面之间的间隔相对应的分区，该分区中分布有至少一个第一气孔21。例如，在工艺腔室中的承载装置为晶舟(例如图8中示出的晶舟105)，该晶舟能够在竖直方向上承载多个晶圆，晶舟上用于承载晶圆的表面即为上述承载面。通过在第一管壁111的各个分区上分布至少一个第一气孔21，可以进一步提高不同晶圆获得的气体量的均匀性。
作为一个优选的实施例，第一管壁111的分区中的所有的第一气孔2中至少一个第一气孔2轴线的高度与对应的两个承载面之间的间隔在竖直方向上的中点高度相同，可选的，第一管壁111的分区中的所有的第一气孔21的轴线的高度均与各个相邻两个承载面之间的间隔的中点高度相同，也就是说，同一分区中的所有的第一气孔21的轴线均位于同一高度，且与各个相邻两个承载面之间的间隔的中点高度相同，这样，可以使第一气孔21与相邻两个承载面之间的距离相等，从而可以使经由第一气孔21流出的工艺气体朝向相邻两个承载面扩散的路径相同，进而可以进一步提高不同晶圆获得的气体量的均匀性。
在一些可选的实施例中，第一气孔21的直径的取值范围为大于等于 0.1mm，且小于等于40mm；竖直方向上相邻两个第一气孔21之间的间距的取值范围为大于等于1mm，且小于等于200mm。
在一些可选的实施例中，第二气孔22的直径的取值范围为大于等于0.1mm，且小于等于20mm；同一列第二气孔列中相邻两个第二气孔22之间的竖直间距的取值范围为大于等于1mm，且小于等于500mm。
第二实施例
请一并参阅图4和图5，本实施例提供的气体喷射装置，其与上述第一实施例相比，同样包括进气管3，该进气管3包括第一管段31和第二管段32，其中，第一管段31竖直设置在工艺腔室中，且第一管段31的上端是封闭的，第一管段31的下端与第二管段32的上端连接，第二管段32的下端用于与用于提供工艺气体的气源(图中未示出)连接。
而且，第一管段31采用双管壁结构，即，第一管段31包括第一管壁311和嵌套在该第一管壁311中的第二管壁312，且第一管壁311的内壁与第二管壁312的外壁之间构成缓冲空间33，并且，第二管壁312的内部空间34与第二管段32的内部空间相连通。
如图4所示，上述第二管段32的管壁与第一管壁311连为一体，且第二管段32的外径和内径分别等于第一管壁311的外径和内径，这样，第二管段32的至少一部分与上述第一管壁311构成了一个连续的直管道，而第二管壁312设置在第一管壁311的内部，其底端是敞开的，以使其内部空间34能够与第二管段12的内部空间相连通。通过使第二管段32的外径和内径分别等于第一管壁311的外径和内径，可以进一步减小体积，减少在工艺腔室中的占用空间，从而可以应用到更多种类的工艺腔室中。
并且，第二管壁312的下端设置有第二封闭部35，该第二封闭部35与第一管壁311的内壁密封连接，从而保证缓冲空间33的底部是封闭的。第一封闭部35例如为与第二管壁312一体成型的环形凸缘，该环形凸缘与第一管 壁311的内壁相抵，以保证缓冲空间33的底部是封闭的。
其中，在第一管壁311上沿竖直方向均匀分布有多个第一气孔41，该第一气孔41分别与缓冲空间33和工艺腔室相连通；在第二管壁312上设置有多个第二气孔42，该第二气孔32分别与第二管壁312的内部空间34和缓冲空间33相连通。由气源提供的工艺气体经由第二管段32流入第二管壁312的内部空间34中，并在该内部空间34中由下而上流动，然后经由各个第二气孔42流入缓冲空间33中；工艺气体在缓冲空间33中进行均匀且充分的混合之后，最后经由各个第一气孔41流入工艺腔室中。
本实施例提供的气体喷射装置的其他结构和功能与上述第一实施例相同，在此不再赘述。
第三实施例
请参阅图6，本实施例提供的气体喷射装置，其与上述第一实施例相比，同样包括进气管5，该进气管5包括第一管段51和第二管段52，其中，第一管段51竖直设置在工艺腔室中，且第一管段51的上端是封闭的，第一管段51的下端与第二管段52的上端连接，第二管段52的下端用于与用于提供工艺气体的气源(图中未示出)连接。
而且，第一管段51采用双管壁结构，即，第一管段51包括第一管壁511和嵌套在该第一管壁511中的第二管壁512，且第一管壁511的内壁与第二管壁512的外壁之间构成缓冲空间53，并且，第二管壁512的内部空间54与第二管段52的内部空间相连通。
为了补偿因内部空间14中的气流产生的压强损失造成的流入缓冲空间13中的工艺气体在竖直方向上不同位置处的出气量的差异，上述第二管壁512的内径在竖直方向上的变化规则满足：使经由多个第二气孔62流入缓冲空间53中的工艺气体在竖直方向上不同位置处的出气量相同。也就是说，通过设定第二管壁512的内径在竖直方向上的变化规则来补偿上述出气量的差 异。由此，可以保证不同晶圆能够获得均匀的气体量，进而可以保证晶圆成膜的厚度均匀性及工艺结果一致性。
在一些可选的实施例中，如图6所示，第二管壁512内径在竖直方向上的变化规则包括：第二管壁512的内径由下而上逐渐减小。例如图6中示出的第二管壁512呈锥桶状。由于第二管壁512的内径越小，流经的气体流速则越大，因此由下而上缩小第二管壁512的内径，能够起到补偿出气量的作用，以提高流入缓冲空间13中的工艺气体在竖直方向上不同位置处的出气量的均匀性。
作为本实施例的一个变型，如图7所示，与上述进气管5相同的，进气管5’同样包括第一管段51’和第二管段52，其中，第一管段51’包括第一管壁511和第二管壁512’，而区别仅在于：第二管壁512内径在竖直方向上的变化规则包括：第二管壁512’包括沿竖直方向依次设置的多个直管段，且多个直管段的内径由下而上逐渐减小。这同样可以由下而上缩小第二管壁512的内径，以能够起到补偿出气量的作用，从而可以提高流入缓冲空间13中的工艺气体在竖直方向上不同位置处的出气量的均匀性。
其中，在第一管壁511上沿竖直方向均匀分布有多个第一气孔61，该第一气孔61分别与缓冲空间53和工艺腔室相连通；在第二管壁512上设置有多个第二气孔62，该第二气孔62分别与第二管壁512的内部空间54和缓冲空间53相连通。由气源提供的工艺气体经由第二管段52流入第二管壁512的内部空间54中，并在该空间54中由下而上流动，然后经由各个第二气孔62流入缓冲空间53中；工艺气体在缓冲空间53中进行均匀且充分的混合之后，最后经由各个第一气孔61流入工艺腔室中。
需要说明的是，在实际应用中，可以设定第二管壁512的内径在竖直方向上的变化规则，和/或设定多个第二气孔22的排布规则，来补偿上述出气量的差异。例如，图6和图7中，在由下而上缩小第二管壁512的内径基础 上，相邻两个第二气孔62之间的竖直间距由下而上逐渐减小。通过将这两种规则结合使用，可以更有效地起到补偿出气量的作用。当然，在实际应用中，可以根据具体需要自由选择两种规则中的至少一者。
还需要说明的是，图6和图7中，第二管段52的管壁与第二管壁512(或第二管壁512’)连为一体，但是，本发明并不局限于此，在实际应用中，也可以采用与上述第二实施例相同的结构，即，上述第二管段52的管壁与第一管壁511连为一体。
本实施例提供的气体喷射装置的其他结构和功能与上述第一、第二实施例相同，在此不再赘述。
综上所述，上述各个实施例提供的半导体热处理设备的气体喷射装置，其通过使进气管中的第二管壁的内径在竖直方向上的变化规则和/或多个第二气孔的排布规则满足：使经由多个第二气孔流入缓冲空间中的工艺气体在竖直方向上不同位置处的出气量相同，在第二管段由下而上向第二管壁的内部通入工艺气体时，可以补偿因工艺气体由下而上流经各个第二气孔产生的压强损失，而导致的流入缓冲空间中的工艺气体在竖直方向上不同位置处的出气量差异，同时借助第一管壁的内壁与第二管壁的外壁之间的上述缓冲空间对工艺气体进行均匀且充分地混合，可以有效提高自各个第一气孔通入工艺腔室中的工艺气体在竖直方向上分布的均匀性，从而可以保证不同晶圆能够获得均匀的气体量，进而可以保证晶圆成膜的厚度均匀性及工艺结果一致性。此外，上述进气管采用的双管壁结构，可以减小体积，减少在工艺腔室中的占用空间，从而可以应用到更多种类的工艺腔室中。
第四实施例
请参阅图8，本实施例提供一种半导体热处理设备100，以立式热处理设备为例，其包括外管101、嵌套在其内部的内管102以及套设在外管101周围的加热器104，其中，该内管102的内部构成工艺腔室，且在该工艺腔 室中的承载装置，该承载装置具有沿竖直方向间隔设置的多个用于承载晶圆的承载面，承载装置例如为晶舟105，该晶舟105能够在竖直方向上承载多个晶圆106，晶舟上用于承载晶圆106的表面即为上述承载面。
半导体热处理设备100还包括至少一个气体喷射装置，该气体喷射装置采用上述各个实施例提供的气体喷射装置，该气体喷射装置中，以第一实施例提供的进气管1为例，如图8所示，该进气管1设置在晶舟105的一侧，用于向工艺腔室中通入工艺气体。
需要说明的是，在实际应用中，上述气体喷射装置的数量可以根据工艺所需的气体种类而设计，以半导体热处理设备100应用于氧化工艺为例，气体喷射装置的数量可以为至少两个，具体可以包括用于向工艺腔室中通入O 2等的氧化性气体的气体喷射装置，以及用于向工艺腔室中通入H 2等的还原性气体的气体喷射装置，可选的，还可以包括用于向工艺腔室中通入N 2等的不活泼气体的气体喷射装置。
在一些可选的实施例中，结合图2和图8所示，第一管壁111上与各个相邻两个承载面之间的间隔相对应的分区中分布有一个第一气孔21，该第一气孔21的轴线的高度与各个相邻两个承载面之间的间隔在竖直方向上的中点高度相同，这样，可以使第一气孔21与相邻两个承载面之间的距离相等，从而可以使经由第一气孔21流出的工艺气体朝向相邻两个承载面扩散的路径相同，进而可以进一步提高不同晶圆106获得的气体量的均匀性。
在一些可选的实施例中，如图8所示，在内管102的远离进气管1的一侧设置有排气缝隙103，且在外管101的底部，与该排气缝隙103相对的位置处设置有排气通道107，工艺腔室中的气体可以依次经由排气缝隙103和排气通道107排出。
本实施例提供的半导体热处理设备，其通过采用上述各个实施例提供的气体喷射装置，可以保证不同晶圆能够获得均匀的气体量，进而可以保证晶 圆成膜的厚度均匀性及工艺结果一致性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

  1. 一种半导体热处理设备的气体喷射装置，其特征在于，包括用于向所述半导体热处理设备的工艺腔室中输送工艺气体的进气管，所述进气管包括第一管段和第二管段，其中，所述第一管段竖直设置在所述工艺腔室中，且所述第一管段的上端是封闭的，所述第一管段的下端与所述第二管段的上端连接，所述第二管段的下端用于与气源连接；
    所述第一管段包括第一管壁和嵌套在所述第一管壁中的第二管壁，且所述第一管壁的内壁与所述第二管壁的外壁之间构成缓冲空间；所述第二管壁的内部空间与所述第二管段的内部空间相连通，其中，在所述第一管壁上沿竖直方向间隔设置有多个第一气孔，所述第一气孔分别与所述缓冲空间和所述工艺腔室相连通；在所述第二管壁上设置有多个第二气孔，所述第二气孔分别与所述第二管壁的内部空间和所述缓冲空间相连通；
    所述第二管壁的内径在竖直方向上的变化规则和/或多个所述第二气孔的排布规则满足：使经由多个所述第二气孔流入所述缓冲空间中的工艺气体在竖直方向上不同位置处的出气量相同。
  2. 根据权利要求1所述的气体喷射装置，其特征在于，多个所述第二气孔的排布规则包括：多个所述第二气孔的排布密度由下而上逐渐增大。
  3. 根据权利要求2所述的气体喷射装置，其特征在于，多个所述第二气孔排成至少一列第二气孔列，每一列第二气孔列中有多个所述第二气孔，且沿竖直方向间隔设置，并且相邻两个所述第二气孔之间的竖直间距由下而上逐渐减小。
  4. 根据权利要求3所述的气体喷射装置，其特征在于，多个所述第二气孔排成一列所述第二气孔列；多个所述第一气孔排成一列第一气孔列，且 所述第二气孔的出气方向与所述第一气孔的出气方向相反。
  5. 根据权利要求1所述的气体喷射装置，其特征在于，所述第二管壁的内径在竖直方向上的变化规则包括：所述第二管壁的内径由下而上逐渐减小；或者，
    所述第二管壁包括沿竖直方向依次设置的多个直管段，且多个所述直管段的内径由下而上逐渐减小。
  6. 根据权利要求1所述的气体喷射装置，其特征在于，多个所述第一气孔沿所述第一管壁的轴向排成多列第一气孔列，每一列第一气孔列中有多个所述第一气孔，且沿竖直方向间隔设置。
  7. 根据权利要求1或6所述的气体喷射装置，其特征在于，所述工艺腔室中设置有承载装置，所述承载装置具有多个用于承载晶圆的承载面，多个所述承载面沿所述竖直方向间隔设置；
    所述第一管壁上具有与各个相邻两个所述承载面之间的间隔相对应的分区，所述分区中分布有至少一个所述第一气孔。
  8. 根据权利要求7所述的气体喷射装置，其特征在于，所述分区中的所有的所述第一气孔的轴线的高度均与所述间隔在所述竖直方向上的中点高度相同。
  9. 根据权利要求1所述的气体喷射装置，其特征在于，所述第二管段的管壁与所述第二管壁连为一体，且所述第二管段的内径与所述第二管壁的内径相同，并且所述第一管壁的下端设置有第一封闭部，所述第一封闭部与所述第二管壁的外壁密封连接。
  10. 根据权利要求1所述的气体喷射装置，其特征在于，所述第二管段的管壁与所述第一管壁连为一体，且所述第二管段的外径和内径分别等于所述第一管壁的外径和内径，并且所述第二管壁的下端设置有第二封闭部，所述第二封闭部与所述第一管壁的内壁密封连接。
  11. 根据权利要求1所述的气体喷射装置，其特征在于，所述第一气孔的直径的取值范围为大于等于0.1mm，且小于等于40mm；竖直方向上相邻两个所述第一气孔之间的间距的取值范围为大于等于1mm，且小于等于200mm。
  12. 根据权利要求3所述的气体喷射装置，其特征在于，所述第二气孔的直径的取值范围为大于等于0.1mm，且小于等于20mm；同一列第二气孔列中相邻两个所述第二气孔之间的竖直间距的取值范围为大于等于1mm，且小于等于500mm。
  13. 一种半导体热处理设备，包括工艺腔室和设置在所述工艺腔室中的承载装置，所述承载装置具有沿竖直方向间隔设置的多个用于承载晶圆的承载面，其特征在于，还包括至少一个气体喷射装置，所述气体喷射装置采用权利要求1-12任意一项所述的气体喷射装置，其中，所述进气管设置在所述承载装置的一侧，用于向所述工艺腔室中通入工艺气体。
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