WO2023032456A1 - Oxide sintered body, production method for same, and sputtering target material - Google Patents
Oxide sintered body, production method for same, and sputtering target material Download PDFInfo
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- WO2023032456A1 WO2023032456A1 PCT/JP2022/026468 JP2022026468W WO2023032456A1 WO 2023032456 A1 WO2023032456 A1 WO 2023032456A1 JP 2022026468 W JP2022026468 W JP 2022026468W WO 2023032456 A1 WO2023032456 A1 WO 2023032456A1
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- sintered body
- oxide sintered
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- mass
- oxide
- Prior art date
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- 239000013077 target material Substances 0.000 title claims description 39
- 238000005477 sputtering target Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000011148 porous material Substances 0.000 claims abstract description 31
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000007088 Archimedes method Methods 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 34
- 239000008187 granular material Substances 0.000 claims description 28
- 239000011268 mixed slurry Substances 0.000 claims description 26
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 24
- 239000002270 dispersing agent Substances 0.000 claims description 23
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 13
- 229910001887 tin oxide Inorganic materials 0.000 claims description 11
- 238000001694 spray drying Methods 0.000 claims description 10
- 229920005646 polycarboxylate Polymers 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 8
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 6
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 239000010955 niobium Substances 0.000 abstract description 7
- 229910052718 tin Inorganic materials 0.000 abstract description 6
- 229910052758 niobium Inorganic materials 0.000 abstract description 4
- 239000000843 powder Substances 0.000 description 64
- 238000004544 sputter deposition Methods 0.000 description 27
- 239000002245 particle Substances 0.000 description 20
- 230000002159 abnormal effect Effects 0.000 description 15
- 239000002612 dispersion medium Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 8
- 238000005336 cracking Methods 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
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- 239000002184 metal Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 238000000691 measurement method Methods 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000142 Sodium polycarboxylate Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920006317 cationic polymer Polymers 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
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- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Definitions
- the present invention relates to an oxide sintered body and a method for producing the same.
- the present invention also relates to a sputtering target material comprising an oxide sintered body.
- Tin oxide-based transparent conductive films are used in a wide range of applications, including display devices such as liquid crystal displays, plasma displays, and organic EL.
- Sputtering is known as one of means for forming a tin oxide-based transparent conductive film.
- a conductive film using sputtering if there are many defects such as pinholes in the sputtering target material, it becomes a factor in the occurrence of abnormal discharge during sputtering, resulting in the generation of particles during sputtering, cracking of the target material, and the like. It also contributes to the generation of cracks.
- the present applicant previously prepared an unsintered compact containing SnO 2 as a main component and containing Nb 2 O 5 and Ta 2 O 5 .
- proposed a method for manufacturing a sputtering target in which the compact is sintered at 1550°C to 1650°C (see Patent Document 1).
- the present applicant previously proposed a sputtering target containing Ta 2 O 5 , Nb 2 O 5 , SnO 2 as the balance, and unavoidable impurities (see Patent Document 2).
- Patent Documents 1 and 2 it is possible to suppress abnormal discharge during sputtering and cracking of the target material.
- display devices using tin oxide-based transparent conductive films are required to have further improved performance, and even higher quality tin oxide-based transparent conductive films are required. Therefore, a sputtering target material used for producing a tin oxide-based transparent conductive film is also required to have a high quality in which abnormal discharge during sputtering and cracking of the target material are reduced as compared with the conventional ones.
- an object of the present invention is to provide an oxide sintered body that has few defects such as pinholes and is less prone to abnormal discharge and cracking when used as a sputtering target material, a method for producing the same, and a sputtering target material.
- the present invention is an oxide sintered body containing a tin element, a tantalum element and a niobium element, The above problem is solved by providing an oxide sintered body having an area ratio of pores per unit area of 1% or less in cross-sectional observation of the oxide sintered body.
- the present invention also provides a sputtering target material comprising the above oxide sintered body.
- the present invention separately prepares a tin oxide slurry, a tantalum oxide slurry and a niobium oxide slurry, Mixing the respective slurries to prepare a mixed slurry, The mixed slurry is subjected to a spray drying method to produce granules, Producing a compact using the granules, A method for producing an oxide sintered body, in which the compact is sintered, A method for producing an oxide sintered body is provided in which a dispersant is added to each of the tin oxide slurry, the tantalum oxide slurry, and the niobium oxide slurry.
- the present invention relates to an oxide sintered body and a sputtering target material using the same.
- the oxide sintered body of the present invention is a sintered body of multiple kinds of metal oxides.
- the oxide sintered body of the present invention includes, as metals, a tin element (hereinafter also simply referred to as “Sn”), a tantalum element (hereinafter also simply referred to as “Ta”), and a niobium element (hereinafter also referred to as “Ta”). Also simply referred to as “Nb”).
- These metal elements are present in the sintered compact in the form of oxides of the respective metals, or in the form of composite oxides of at least two metal elements selected from these three metal elements. present in the body.
- the oxide sintered body of the present invention is characterized in that the presence of pores is extremely reduced.
- the pore is a defect site observed in the cross section of the oxide sintered body of the present invention.
- the cross section of the oxide sintered body is a surface obtained by cutting the oxide sintered body by a predetermined means.
- the hole is open in cross section and extends toward the inside of the oxide sintered body.
- a hole includes both a through hole and a bottomed hole.
- the term “pore” refers to a defect site of a size that can be observed when the cross section of the oxide sintered body is observed under a microscope at a magnification of 200 (observation field: 445.3 ⁇ m ⁇ 634.6 ⁇ m). is.
- the degree of presence of pores in the oxide sintered body of the present invention is preferably the area ratio of pores per unit area (hereinafter also referred to as "pore area ratio") in cross-sectional observation of the oxide sintered body. is as low as 1% or less. Due to such a low degree of existence of the holes, when the oxide sintered body of the present invention is used as, for example, a sputtering target material, abnormal discharge is effectively generated during sputtering. Suppressed. In addition, the generation of particles during sputtering and the generation of cracks in the target material can be effectively prevented. From the viewpoint of making these advantages more remarkable, the pore area ratio is more preferably 0.9% or less, even more preferably 0.8% or less, and 0.7% or less.
- the hole area ratio is still more preferable, particularly preferably 0.6% or less, and particularly preferably 0.5% or less.
- the hole area ratio is preferably more than 0% and 1% or less, more preferably 0.02% or more and 0.9% or less, and 0.04% or more and 0.8% or less. more preferably 0.06% or more and 0.7% or less, even more preferably 0.08% or more and 0.6% or less, particularly preferably 0.1% or more and 0.5%.
- a method for measuring the pore area ratio will be described in Examples described later. Also, a technique for reducing the hole area ratio to the above value or less will be described later.
- One of the characteristics of the oxide sintered body of the present invention is that, when a hole is observed in its cross section, the size of the hole is suppressed. Specifically, the maximum equivalent circle diameter of the pores in the observation of the cross section of the oxide sintered body is as small as 20 ⁇ m or less.
- the oxide sintered body of the present invention effectively suppresses the occurrence of abnormal discharge during sputtering when it is used as a sputtering target material, for example. be done.
- the generation of particles during sputtering and the generation of cracks in the target material can be effectively prevented.
- the maximum equivalent circle diameter of the hole is more preferably 18 ⁇ m or less, even more preferably 16 ⁇ m or less, even more preferably 15 ⁇ m or less, and 13 ⁇ m. It is particularly preferably 12 ⁇ m or less, particularly preferably 12 ⁇ m or less. The closer the maximum equivalent circle diameter of the hole is to zero, the better. From this point of view, the maximum equivalent circle diameter of the hole is preferably more than 0 ⁇ m and 20 ⁇ m or less, more preferably 1 ⁇ m or more and 18 ⁇ m or less, even more preferably 2 ⁇ m or more and 16 ⁇ m or less, and 3 ⁇ m or more and 15 ⁇ m or less.
- a method for measuring the maximum equivalent circle diameter of the hole will be described in Examples described later. Also, a technique for reducing the maximum equivalent circle diameter of the hole to the above value or less will be described later.
- the oxide sintered body of the present invention has an extremely small maximum Feret diameter of 50 ⁇ m or less.
- the Feret diameter is the size of a rectangle that circumscribes the object to be measured. Even by setting the maximum Feret diameter of the hole to the above-mentioned value or less, the oxide sintered body of the present invention effectively prevents abnormal discharge from occurring during sputtering when it is used, for example, as a sputtering target material. suppressed by In addition, the generation of particles during sputtering and the generation of cracks in the target material can be effectively prevented.
- the maximum Feret diameter of the hole is more preferably 45 ⁇ m or less, even more preferably 40 ⁇ m or less, even more preferably 35 ⁇ m or less, and 30 ⁇ m or less. is particularly preferred, 28 ⁇ m or less is particularly preferred, and 26 ⁇ m or less is most preferred. The closer the maximum Feret diameter of the hole to zero, the better. From this point of view, the maximum Feret diameter of the pore is preferably more than 0 ⁇ m and 50 ⁇ m or less, more preferably 2 ⁇ m or more and 45 ⁇ m or less, even more preferably 3 ⁇ m or more and 40 ⁇ m or less, and 4 ⁇ m or more and 35 ⁇ m or less.
- 6 ⁇ m or more and 30 ⁇ m or less is particularly preferable, 8 ⁇ m or more and 28 ⁇ m or less is particularly preferable, and 10 ⁇ m or more and 26 ⁇ m or less is most preferable.
- a method for measuring the maximum Feret diameter of the pore will be described in Examples described later. Also, a technique for reducing the maximum Feret diameter of the hole to the above value or less will be described later.
- the oxide sintered body of the present invention preferably satisfies at least one of the above-described (i) hole area ratio, (ii) maximum equivalent circle diameter, and (iii) maximum Feret diameter, and (i) More preferably, a combination of at least two of -(iii) is satisfied, and more preferably all of (i)-(iii) are satisfied.
- the oxide sintered body of the present invention is characterized by high relative density in addition to (i)-(iii) described above. Specifically, the oxide sintered body of the present invention preferably exhibits a high relative density of 99.6% or more. By exhibiting such a high relative density, the oxide sintered body of the present invention can be used as, for example, a sputtering target material, and when sputtering is performed using the target material, abnormal discharge during sputtering can be suppressed. Therefore, it is preferable. From this point of view, the relative density of the oxide sintered body of the present invention is more preferably 99.8% or more, more preferably 100.0% or more, and more preferably 100.2% or more.
- the oxide sintered body of the present invention having such a relative density is preferably produced by the method described below. Relative density is measured according to the Archimedes method. A specific measuring method will be described in Examples described later.
- the oxide sintered body of the present invention is also characterized by high strength. Specifically, the oxide sintered body of the present invention preferably exhibits a high bending strength of 180 MPa or more. By exhibiting such a high bending strength, the oxide sintered body of the present invention is used as a sputtering target material, for example, and when sputtering is performed with the target material, abnormal discharge occurs unintentionally during sputtering. However, it is preferable because the target material is less likely to be broken or cracked. From this point of view, the flexural strength of the oxide sintered body of the present invention is more preferably 190 MPa or more, more preferably 200 MPa or more, even more preferably 210 MPa or more, and 220 MPa or more.
- the upper limit of the bending strength is not particularly limited, it is preferably 300 MPa or less, more preferably 290 MPa or less, even more preferably 280 MPa or less, and even more preferably 270 MPa or less.
- the oxide sintered body of the present invention having such bending strength is preferably produced by the method described below. The bending strength is measured according to JIS R1601. A specific measuring method will be described in Examples described later.
- the oxide sintered body of the present invention preferably has a low bulk resistivity because DC sputtering can be easily performed when the oxide sintered body is used as a sputtering target material.
- the bulk resistivity of the oxide sintered body is preferably 10 ⁇ cm or less.
- Bulk resistivity is measured in AUTO RANGE mode using Loresta (registered trademark) HP MCP-T410 (series 4-probe probe TYPE ESP) manufactured by Mitsubishi Chemical Corporation. Measurement points are five points in total, near the center and four corners of the oxide sintered body, and the arithmetic mean value of each measured value is taken as the bulk resistivity of the sintered body.
- the oxide sintered body of the present invention contains Sn, Ta and Nb as metal elements.
- the oxide sintered body of the present invention contains SnO 2 as a main component and Ta 2 O 5 and Nb 2 O 5 as subcomponents. It is preferable from the point of improvement. From the viewpoint of making this advantage more remarkable, the total amount of Ta 2 O 5 and Nb 2 O 5 in the oxide sintered body is preferably 1.15% by mass or more and 12.0% by mass or less. , More preferably 3.5% by mass or more and 10% by mass or less, even more preferably 4.0% by mass or more and 8.0% by mass or less, and 5.0% by mass or more and 7.0% by mass or less It is even more preferred to have
- the ratio of Ta 2 O 5 and Nb 2 O 5 in the oxide sintered body of the present invention improves the characteristics of the transparent conductive film formed from the oxide sintered body, and the oxide sintered body
- the mass ratio of Nb 2 O 5 /Ta 2 O 5 is preferably 0.15 or more and 0.90 or less, and 0.15 or more and 0.60 or less. is more preferably 0.16 or more and 0.43 or less, and even more preferably 0.17 or more and 0.33 or less.
- the specific ratio of Sn, Ta, and Nb in the oxide sintered body of the present invention is preferably 80% by mass or more and less than 100% by mass in terms of SnO 2
- Ta is Ta 2 O 5 It is preferably more than 0% by mass and 10% by mass or less in terms of conversion, and preferably more than 0% by mass and 10% by mass or less in terms of Nb 2 O 5
- Sn is preferably 88% by mass or more and 98.85% by mass or less in terms of SnO 2
- Ta is preferably 1% by mass or more and 8% by mass or less in terms of Ta 2 O 5
- Nb is Nb 2 It is preferably 0.15% by mass or more and 4% by mass or less in terms of O5 .
- Sn is preferably 90% by mass or more and 96.5% by mass or less in terms of SnO 2
- Ta is preferably 3% by mass or more and 7% by mass or less in terms of Ta 2 O 5
- Nb is Nb 2 It is preferably 0.5% by mass or more and 3% by mass or less in terms of O5 .
- the oxide sintered body of the present invention contain Sn, Ta and Nb in this proportion, because the properties of the transparent conductive film formed from the oxide sintered body are improved.
- the proportions of SnO 2 , Ta 2 O 5 and Nb 2 O 5 are values based on mass including the amount of unavoidable impurities contained in the oxide sintered body.
- the oxide sintered body of the present invention is produced by sintering raw material powder. Tin oxide powder, tantalum oxide powder and niobium oxide powder are used as the raw material powder. SnO 2 powder is preferably used as the tin oxide powder. Ta 2 O 5 powder is preferably used as the tantalum oxide powder. Nb 2 O 5 powder is preferably used as the niobium oxide powder. The ratio of each oxide powder to be used is preferably adjusted so that the ratio of SnO 2 , Ta 2 O 5 and Nb 2 O 5 contained in the target oxide sintered body is within the range described above.
- the particle size of each oxide powder is expressed as a volume cumulative particle size D50 at a cumulative volume of 50% by volume measured by a laser diffraction scattering particle size distribution measurement method, and is 0.00. It is preferably 3 ⁇ m or more and 1.2 ⁇ m or less, more preferably 0.4 ⁇ m or more and 1.1 ⁇ m or less, and still more preferably 0.5 ⁇ m or more and 0.9 ⁇ m or less.
- slurries of the respective oxide powders are separately prepared, and the slurries are mixed to prepare a mixed slurry, thereby successfully producing an oxide sintered body in which the generation of pores is suppressed.
- a liquid capable of dispersing each oxide powder can be used as a dispersion medium for preparing the slurry.
- examples of such dispersion media include water and various organic solvents.
- an organic solvent for example, ethanol can be used.
- the proportion of the dispersion medium in the slurry is preferably 20% by mass or more and 70% by mass or less, more preferably 30% by mass or more and 60% by mass or less, still more preferably 35% by mass or more and 55% by mass or less, relative to the mass of the oxide powder.
- the oxide powder is sufficiently dispersed in the dispersion medium when the following settings are made.
- the concentration of the oxide powder in the slurry of each oxide powder is preferably 58% by mass or more and 84% by mass or less, and 62% by mass or more and 77% by mass. % or less, more preferably 64 mass % or more and 74 mass % or less. From the viewpoint of enhancing the dispersibility of each oxide powder contained in the slurry, it is preferable to blend a dispersant into each slurry. As the dispersant, an appropriate one can be used according to the type of oxide powder.
- polycarboxylates such as ammonium polycarboxylates, sodium polycarboxylates and polycarboxylate amine salts; quaternary cationic polymers; nonionic surfactants such as polyalkylene glycols; and cations such as quaternary ammonium salts. system surfactants and the like can be used.
- These dispersants can be used singly or in combination of two or more.
- it is preferable to use polycarboxylates because of the high dispersibility of the oxide powder, and it is particularly preferable to use ammonium polycarboxylates.
- the type of dispersant to be blended in each slurry may be the same or different.
- the concentration of the dispersant to be mixed in each slurry is appropriately selected according to the concentration and type of oxide powder contained in the slurry.
- the concentration of the dispersant in the slurry is preferably 0.01% by mass or more and 0.04% by mass or less, more preferably 0.015% by mass or more and 0.035% by mass or less, more preferably 0.035% by mass or less, relative to the mass of the oxide powder. When is set to 0.02% by mass or more and 0.03% by mass or less, satisfactory dispersibility is exhibited.
- the concentration of dispersant in each slurry may be the same or different.
- Each slurry may contain a binder.
- the binder for example, various organic polymer materials can be used. Examples of organic polymer materials that can be used include polyvinyl alcohol and acrylic emulsion binders.
- the concentration of the binder compounded in each slurry is appropriately selected according to the concentration and type of oxide powder contained in the slurry.
- the concentration of the binder in the slurry is preferably 0.2% by mass or more and 0.8% by mass or less, more preferably 0.3% by mass or more and 0.7% by mass or less, more preferably 0.7% by mass or less, relative to the mass of the oxide powder. is set to 0.4% by mass or more and 0.6% by mass or less, the strength of the granules can be made moderate.
- the binder concentration in each slurry may be the same or different.
- Preparation of the slurry is done by mixing each component that makes up the slurry.
- a media mill such as a ball mill or a bead mill because the oxide powder can be sufficiently dispersed in the dispersion medium.
- each slurry is then mixed to prepare a mixed slurry.
- the mixing ratio of each slurry is preferably adjusted so that the ratio of SnO 2 , Ta 2 O 5 and Nb 2 O 5 contained in the target oxide sintered body is within the range described above.
- a media mill such as a ball mill or bead mill, but the method is not limited to this method.
- the advantages of preparing a slurry of each oxide powder and mixing the slurries to obtain a mixed slurry are as follows.
- this production method as described later, it is preferable to use a mixed slurry and obtain granules by a spray drying method.
- the content of the dispersant is increased, the granules obtained by the spray drying method tend to be hard and difficult to crush.
- Preparing a slurry of each oxide powder and mixing the slurries to obtain a mixed slurry has another advantage as described below.
- the oxide powder of each metal element is collectively used as a dispersion medium.
- a slurry was prepared by dispersing.
- the dispersant contained in the slurry preferentially acted on a specific oxide, and it was found that there was a difference in the dispersibility of the oxides in the dispersion medium. This was found out as a result of examination by the inventor.
- each oxide powder is A method of dispersing them separately in a dispersion medium and blending a dispersant with the dispersion medium at that time is employed.
- the dispersing agent reliably acts on each oxide powder, so that it becomes difficult to cause a difference in the dispersibility of each oxide powder in the mixed slurry.
- the mixed slurry is subjected to a spray drying method to produce granules.
- the particle diameter represented by the volume cumulative particle diameter D50 at the cumulative volume of 50% by volume measured by the laser diffraction scattering particle size distribution measurement method is 30 ⁇ m or more and 60 ⁇ m or less, particularly 35 ⁇ m or more and 55 ⁇ m or less, especially 40 ⁇ m or more and 50 ⁇ m. It is preferable to produce the following granules from the viewpoint of ease of crushing of the granules. The fact that the granules are easily crushed is advantageous in that when the granules are used to produce an oxide sintered body, pores are less likely to occur.
- the volume cumulative particle size D50 of the granules is the particle size measured without ultrasonic dispersion treatment.
- the granules are filled into a mold to produce a compact.
- a cold press method such as cold isostatic pressing can be employed.
- the pressure during molding is preferably set to 600 kg/cm 2 or more and 1200 kg/cm 2 or less from the viewpoint of obtaining a dense molded body.
- the molded article may be subjected to a degreasing step, if necessary.
- organic substances contained in the molded body such as dispersants and binders, can be removed.
- the degreasing step is performed by heating the compact to, for example, 500° C. or higher and 900° C. or lower in an air atmosphere.
- Firing of the compact can generally be carried out in an oxygen-containing atmosphere.
- firing in an air atmosphere is convenient.
- the firing temperature is preferably 1500° C. or higher and 1700° C. or lower, more preferably 1520° C. or higher and 1680° C. or lower, and still more preferably 1550° C. or higher and 1650° C. or lower.
- the firing time is preferably from 1 hour to 100 hours, more preferably from 2 hours to 50 hours, and even more preferably from 3 hours to 30 hours.
- the rate of temperature increase and the rate of temperature decrease are each independently preferably 5°C/hour or more and 500°C/hour or less, more preferably 10°C/hour or more and 200°C/hour or less, and 20°C/hour or more and 100°C. / hour or less is more preferable.
- the oxide sintered body obtained by the above method is dense, and the formation of pores is suppressed. Therefore, the oxide sintered body has a low pore area ratio and a small maximum equivalent circle diameter and maximum Feret diameter.
- the oxide sintered body thus obtained can be processed into a predetermined size by grinding or the like, and used as a sputtering target material.
- a sputtering target is obtained by joining the obtained sputtering target material to a backing plate.
- the backing plate for example, stainless steel, copper, titanium, or the like can be used.
- a low melting point solder such as indium can be used for joining the target material and the backing plate.
- the sputtering target thus obtained is suitably used for producing a sputtered film such as a transparent conductive film.
- a sputtered film formed using this sputtering target can have the same composition as the sputtering target material.
- the specific resistivity of the sputtered film is preferably as low as 9 m ⁇ cm or less.
- Example 1 SnO 2 powder with a particle size D50 of 0.7 ⁇ m, Ta 2 O 5 powder with a particle size D50 of 0.6 ⁇ m, and Nb 2 O 5 powder with a particle size D50 of 0.9 ⁇ m were prepared.
- the particle size D50 was measured using a particle size distribution analyzer MT3300EXII manufactured by Microtrack Bell Co., Ltd. Water was used as the dispersion medium.
- the refractive index of the substance to be measured was 2.20.
- Each oxide powder is separately placed in a pot, and 0.5% by weight of polyvinyl alcohol, 0.02% by weight of ammonium polycarboxylate, and 50% by weight of water are added to the weight of each oxide powder.
- each slurry was prepared by mixing for 20 hours using a ball mill.
- the prepared slurries were mixed and mixed for 60 minutes using a ball mill to obtain a mixed slurry.
- the mixing ratio of each slurry was such that SnO 2 was 96.5 mass %, Ta 2 O 5 was 3.0 mass %, and Nb 2 O 5 was 0.5 mass % with respect to the total of each powder.
- the mixed slurry was supplied to a spray drying apparatus, and spray drying was performed under the conditions of an atomizer rotation speed of 14000 rpm, an inlet temperature of 200°C and an outlet temperature of 80°C to obtain granules.
- the particle diameter D50 of the granules was 45 ⁇ m.
- the obtained granules were filled in a mold of 158 mm ⁇ 640 mm and press-molded at a pressure of 800 kg/cm 2 to obtain a compact.
- the resulting compact was degreased by heating at 750° C. for 6 hours in an air atmosphere.
- a sintered body was produced by sintering the molded body after degreasing.
- Firing was performed in an atmosphere with an oxygen concentration of 20 vol % at a firing temperature of 1600° C., a firing time of 8 hours, a temperature increase rate of 50° C./h, and a temperature decrease rate of 50° C./h.
- the sintered body thus obtained was cut to obtain an oxide sintered body having a width of 100 mm, a length of 240 mm, a thickness of 8 mm, and a surface roughness Ra of 1.0 ⁇ m.
- a #170 whetstone was used for cutting.
- Example 2 and 3 Each powder was mixed so that the ratio of each powder to the total of SnO 2 powder, Ta 2 O 5 powder, and Nb 2 O 5 powder is shown in Table 1 below. An oxide sintered body was obtained in the same manner as in Example 1 except for this.
- Example 1 The same SnO 2 powder, Ta 2 O 5 powder, and Nb 2 O 5 powder as in Example 1 were prepared. Each powder was weighed to give 94% by weight SnO2 , 5 % by weight Ta2O5 and 1 % by weight Nb2O5 based on the total weight of each powder and dry mixed for 21 hours. 6% by mass of a 4% by mass polyvinyl alcohol aqueous solution was added to the mixed powder. After the polyvinyl alcohol and the mixed powder were mixed using a mortar, the mixture was passed through a 5.5-mesh sieve to obtain a mixed powder for molding. An oxide sintered body was obtained in the same manner as in Example 1 except for these.
- Example 2 The same SnO 2 powder, Ta 2 O 5 powder, and Nb 2 O 5 powder as in Example 1 were prepared. Put all the powder in a pot, add 0.5% by weight of polyvinyl alcohol, 0.02% by weight of ammonium polycarboxylate, and 50% by weight of water to the total amount of powder, and add 20% by weight using a ball mill. A mixed slurry was prepared by mixing for a period of time. The ratio of each powder in the mixed slurry was such that SnO 2 was 94% by mass, Ta 2 O 5 was 5% by mass, and Nb 2 O 5 was 1% by mass with respect to the total of each powder. An oxide sintered body was obtained in the same manner as in Example 1 except for this.
- Comparative Example 3 In this comparative example, the concentration of 0.02% by mass of ammonium polycarboxylate, which is the dispersant used in Example 2, was increased to 0.05% by mass. An oxide sintered body was obtained in the same manner as in Example 2 except for this.
- particle analysis software (“Particle Analysis Version 3.0” manufactured by Sumitomo Metal Technology Co., Ltd.), the SEM image was traced and image recognition was performed with a scanner. This image was binarized. At this time, the conversion value was set so that one pixel was displayed in units of ⁇ m. Next, the area and the sum of the areas were obtained for all the holes shown in the SEM image. The percentage value of the total area of the holes relative to the visual field area (445.3 ⁇ m ⁇ 634.6 ⁇ m) was obtained. The arithmetic average value of the percentages measured for 10 different SEM images was obtained, and this arithmetic average value was defined as the pore area ratio in the present invention.
- the equivalent circle diameter of the pore was calculated based on the area of the pore measured in the process of determining the area ratio of the pore.
- the maximum value was taken as the maximum equivalent circle diameter of the hole.
- the horizontal Feret diameter ( ⁇ m) is calculated based on the total number of pixels in the horizontal direction
- the vertical Feret diameter is calculated based on the total number of pixels in the vertical direction. ( ⁇ m) was calculated.
- the maximum value was taken as the maximum Feret diameter of the hole.
- the content (% by mass) of the constituent substances of the target material is considered to be SnO 2 , Ta 2 O 5 and Nb 2 O 5 , for example C1: mass % of SnO 2 in the target material ⁇ 1: Density of SnO 2 (6.95 g/cm 3 ) C2: % by mass of Ta 2 O 5 in target material ⁇ 2: Density of Ta 2 O 5 (8.74 g/cm 3 ) C3: % by mass of Nb 2 O 5 in target material ⁇ 3: Density of Nb 2 O 5 (4.47 g/cm 3 ) is applied to equation (1), the theoretical density ⁇ can be calculated.
- the mass % of SnO 2 , the mass % of Ta 2 O 5 and the mass % of Nb 2 O 5 can be obtained from the analysis results of each element of the target material by ICP-OES analysis.
- Sputtering targets were prepared using the oxide sintered bodies obtained in Examples and Comparative Examples, and the targets were attached to a DC magnetron sputtering apparatus to carry out sputtering.
- Sputtering conditions are as follows. ⁇ Attainment vacuum: 3 ⁇ 10 ⁇ 6 Pa ⁇ Sputtering pressure: 0.4 Pa ⁇ Oxygen partial pressure: 1 ⁇ 10 -3 Pa ⁇ Input power amount time: 2 W / cm 2 Time: 25 hours The number of times of arcing that occurred during sputtering under the above conditions was measured with an arcing counter attached to the power supply. As an arcing counter, ⁇ Arc Monitor MAM Genesis MAM Data Collector Ver.
- Comparative Example 2 in which a slurry was not prepared for each raw material powder, the granules became non-uniform and the compact could not be made dense, and the oxide sinter produced from the compact I have many holes in my body.
- Comparative Example 3 in which the amount of the dispersant was larger than that in Comparative Example 2, the granules were uniform, but were hard and hard to be crushed. A large number of holes were generated in the oxide sintered body produced from the molded body.
- an oxide sintered body that has few holes or has a small size even if there are holes, and is less likely to cause abnormal discharge or cracks when used as a sputtering target material.
- Methods of manufacture and sputtering target materials are provided.
- sputtering is performed using the oxide sintered body according to the present invention, it is possible to form a film while suppressing the occurrence of abnormal discharge and cracking during sputtering compared to the case of using a conventional oxide sintered body. is possible, it is possible to suppress the generation of extra defective products, and furthermore it is possible to reduce the generation of waste. That is, it becomes possible to reduce the energy cost in disposing of those wastes. This will lead to sustainable management and efficient use of natural resources, as well as achieving decarbonization (carbon neutrality).
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Abstract
Description
したがって本発明は、ピンホール等の欠陥が少なく、スパッタリングターゲット材として用いた場合に異常放電や割れが発生しづらい酸化物焼結体及びその製造方法並びにスパッタリングターゲット材を提供することにある。 According to the techniques described in Patent Documents 1 and 2, it is possible to suppress abnormal discharge during sputtering and cracking of the target material. However, display devices using tin oxide-based transparent conductive films are required to have further improved performance, and even higher quality tin oxide-based transparent conductive films are required. Therefore, a sputtering target material used for producing a tin oxide-based transparent conductive film is also required to have a high quality in which abnormal discharge during sputtering and cracking of the target material are reduced as compared with the conventional ones.
Accordingly, an object of the present invention is to provide an oxide sintered body that has few defects such as pinholes and is less prone to abnormal discharge and cracking when used as a sputtering target material, a method for producing the same, and a sputtering target material.
前記酸化物焼結体の断面観察における単位面積当たりの孔部の面積率が1%以下である酸化物焼結体を提供することにより前記の課題を解決したものである。 The present invention is an oxide sintered body containing a tin element, a tantalum element and a niobium element,
The above problem is solved by providing an oxide sintered body having an area ratio of pores per unit area of 1% or less in cross-sectional observation of the oxide sintered body.
前記各スラリーを混合して混合スラリーを調製し、
前記混合スラリーをスプレードライ法に付して造粒物を製造し、
前記造粒物を用いて成形体を製造し、
前記成形体を焼結させる、酸化物焼結体の製造方法であって、
前記スズ酸化物のスラリー、前記タンタル酸化物のスラリー及び前記ニオブ酸化物のスラリーのそれぞれに分散剤を含有させておく、酸化物焼結体の製造方法を提供するものである。 Further, the present invention separately prepares a tin oxide slurry, a tantalum oxide slurry and a niobium oxide slurry,
Mixing the respective slurries to prepare a mixed slurry,
The mixed slurry is subjected to a spray drying method to produce granules,
Producing a compact using the granules,
A method for producing an oxide sintered body, in which the compact is sintered,
A method for producing an oxide sintered body is provided in which a dispersant is added to each of the tin oxide slurry, the tantalum oxide slurry, and the niobium oxide slurry.
本発明の酸化物焼結体は、複数種類の金属酸化物の焼結体である。詳細には、本発明の酸化物焼結体は、金属としてスズ元素(以下、単に「Sn」ともいう。)、タンタル元素(以下、単に「Ta」ともいう。)、及びニオブ元素(以下、単に「Nb」ともいう。)を含んでいる。これらの金属元素は、それぞれの金属の酸化物の状態で焼結体中に存在しているか、あるいはこれら3種類の金属元素から選択される少なくとも2種類の金属元素の複合酸化物の状態で焼結体中に存在している。 The present invention will be described below based on its preferred embodiments. The present invention relates to an oxide sintered body and a sputtering target material using the same.
The oxide sintered body of the present invention is a sintered body of multiple kinds of metal oxides. Specifically, the oxide sintered body of the present invention includes, as metals, a tin element (hereinafter also simply referred to as “Sn”), a tantalum element (hereinafter also simply referred to as “Ta”), and a niobium element (hereinafter also referred to as “Ta”). Also simply referred to as “Nb”). These metal elements are present in the sintered compact in the form of oxides of the respective metals, or in the form of composite oxides of at least two metal elements selected from these three metal elements. present in the body.
孔部は断面において開口しており、酸化物焼結体の内部に向けて延びている。孔部は、透孔及び有底孔の双方を包含する。本明細書において孔部とは、酸化物焼結体の断面を200倍の倍率(観察視野:445.3μm×634.6μm)で顕微鏡観察したときに存在が認められる大きさの欠損部位のことである。 As described in the above-mentioned Patent Document 1, it has been difficult to produce a dense sintered body containing SnO 2 because SnO 2 is a difficult-to-sinter substance. Due to this, conventionally known sintered bodies containing SnO 2 tend to have holes, which are defect sites. On the other hand, the oxide sintered body of the present invention is characterized in that the presence of pores is extremely reduced. The pore is a defect site observed in the cross section of the oxide sintered body of the present invention. In the present specification, the cross section of the oxide sintered body is a surface obtained by cutting the oxide sintered body by a predetermined means.
The hole is open in cross section and extends toward the inside of the oxide sintered body. A hole includes both a through hole and a bottomed hole. As used herein, the term “pore” refers to a defect site of a size that can be observed when the cross section of the oxide sintered body is observed under a microscope at a magnification of 200 (observation field: 445.3 μm × 634.6 μm). is.
孔部面積率の測定方法は、後述する実施例において説明する。また、孔部面積率を上述の値以下にするための手法についても後述する。 The degree of presence of pores in the oxide sintered body of the present invention is preferably the area ratio of pores per unit area (hereinafter also referred to as "pore area ratio") in cross-sectional observation of the oxide sintered body. is as low as 1% or less. Due to such a low degree of existence of the holes, when the oxide sintered body of the present invention is used as, for example, a sputtering target material, abnormal discharge is effectively generated during sputtering. Suppressed. In addition, the generation of particles during sputtering and the generation of cracks in the target material can be effectively prevented. From the viewpoint of making these advantages more remarkable, the pore area ratio is more preferably 0.9% or less, even more preferably 0.8% or less, and 0.7% or less. is still more preferable, particularly preferably 0.6% or less, and particularly preferably 0.5% or less. The closer the pore area ratio is to zero, the better. From this viewpoint, the hole area ratio is preferably more than 0% and 1% or less, more preferably 0.02% or more and 0.9% or less, and 0.04% or more and 0.8% or less. more preferably 0.06% or more and 0.7% or less, even more preferably 0.08% or more and 0.6% or less, particularly preferably 0.1% or more and 0.5% The following are particularly preferred.
A method for measuring the pore area ratio will be described in Examples described later. Also, a technique for reducing the hole area ratio to the above value or less will be described later.
孔部の最大円相当径の測定方法は、後述する実施例において説明する。また、孔部の最大円相当径を上述の値以下にするための手法についても後述する。 One of the characteristics of the oxide sintered body of the present invention is that, when a hole is observed in its cross section, the size of the hole is suppressed. Specifically, the maximum equivalent circle diameter of the pores in the observation of the cross section of the oxide sintered body is as small as 20 μm or less. By suppressing the size of the holes in this way, the oxide sintered body of the present invention effectively suppresses the occurrence of abnormal discharge during sputtering when it is used as a sputtering target material, for example. be done. In addition, the generation of particles during sputtering and the generation of cracks in the target material can be effectively prevented. From the viewpoint of making these advantages more remarkable, the maximum equivalent circle diameter of the hole is more preferably 18 μm or less, even more preferably 16 μm or less, even more preferably 15 μm or less, and 13 μm. It is particularly preferably 12 μm or less, particularly preferably 12 μm or less. The closer the maximum equivalent circle diameter of the hole is to zero, the better. From this point of view, the maximum equivalent circle diameter of the hole is preferably more than 0 μm and 20 μm or less, more preferably 1 μm or more and 18 μm or less, even more preferably 2 μm or more and 16 μm or less, and 3 μm or more and 15 μm or less. It is even more preferable to be 4 μm or more and 13 μm or less, and particularly preferably 5 μm or more and 12 μm or less.
A method for measuring the maximum equivalent circle diameter of the hole will be described in Examples described later. Also, a technique for reducing the maximum equivalent circle diameter of the hole to the above value or less will be described later.
孔部の最大フェレ径の測定方法は、後述する実施例において説明する。また、孔部の最大フェレ径を上述の値以下にするための手法についても後述する。 In addition to the maximum equivalent circle diameter of the pores being equal to or less than the value described above, the oxide sintered body of the present invention has an extremely small maximum Feret diameter of 50 μm or less. The Feret diameter is the size of a rectangle that circumscribes the object to be measured. Even by setting the maximum Feret diameter of the hole to the above-mentioned value or less, the oxide sintered body of the present invention effectively prevents abnormal discharge from occurring during sputtering when it is used, for example, as a sputtering target material. suppressed by In addition, the generation of particles during sputtering and the generation of cracks in the target material can be effectively prevented. From the viewpoint of making these advantages more remarkable, the maximum Feret diameter of the hole is more preferably 45 μm or less, even more preferably 40 μm or less, even more preferably 35 μm or less, and 30 μm or less. is particularly preferred, 28 µm or less is particularly preferred, and 26 µm or less is most preferred. The closer the maximum Feret diameter of the hole to zero, the better. From this point of view, the maximum Feret diameter of the pore is preferably more than 0 μm and 50 μm or less, more preferably 2 μm or more and 45 μm or less, even more preferably 3 μm or more and 40 μm or less, and 4 μm or more and 35 μm or less. 6 μm or more and 30 μm or less is particularly preferable, 8 μm or more and 28 μm or less is particularly preferable, and 10 μm or more and 26 μm or less is most preferable.
A method for measuring the maximum Feret diameter of the pore will be described in Examples described later. Also, a technique for reducing the maximum Feret diameter of the hole to the above value or less will be described later.
更に、SnがSnO2換算で88質量%以上98.85質量%以下であることが好ましく、TaがTa2O5換算で1質量%以上8質量%以下であることが好ましく、NbがNb2O5換算で0.15質量%以上4質量%以下であることが好ましい。
特に、SnがSnO2換算で90質量%以上96.5質量%以下であることが好ましく、TaがTa2O5換算で3質量%以上7質量%以下であることが好ましく、NbがNb2O5換算で0.5質量%以上3質量%以下であることが好ましい。
本発明の酸化物焼結体にSn、Ta及びNbがこの割合で含まれていることによって、該酸化物焼結体から形成される透明導電膜の特性が向上するので好ましい。
なお、SnO2、Ta2O5、及びNb2O5それぞれの割合は、酸化物焼結体に含まれる不可避不純物の量を含めた質量基準での値である。 The specific ratio of Sn, Ta, and Nb in the oxide sintered body of the present invention is preferably 80% by mass or more and less than 100% by mass in terms of SnO 2 , and Ta is Ta 2 O 5 It is preferably more than 0% by mass and 10% by mass or less in terms of conversion, and preferably more than 0% by mass and 10% by mass or less in terms of Nb 2 O 5 .
Furthermore, Sn is preferably 88% by mass or more and 98.85% by mass or less in terms of SnO 2 , Ta is preferably 1% by mass or more and 8% by mass or less in terms of Ta 2 O 5 , and Nb is Nb 2 It is preferably 0.15% by mass or more and 4% by mass or less in terms of O5 .
In particular, Sn is preferably 90% by mass or more and 96.5% by mass or less in terms of SnO 2 , Ta is preferably 3% by mass or more and 7% by mass or less in terms of Ta 2 O 5 , and Nb is Nb 2 It is preferably 0.5% by mass or more and 3% by mass or less in terms of O5 .
It is preferable that the oxide sintered body of the present invention contain Sn, Ta and Nb in this proportion, because the properties of the transparent conductive film formed from the oxide sintered body are improved.
The proportions of SnO 2 , Ta 2 O 5 and Nb 2 O 5 are values based on mass including the amount of unavoidable impurities contained in the oxide sintered body.
各酸化物粉の使用割合は、目的とする酸化物焼結体に含まれるSnO2、Ta2O5及びNb2O5の割合が上述した範囲となるように調整されることが好ましい。 Next, a preferred method for producing the oxide sintered body of the present invention will be described. The oxide sintered body of the present invention is produced by sintering raw material powder. Tin oxide powder, tantalum oxide powder and niobium oxide powder are used as the raw material powder. SnO 2 powder is preferably used as the tin oxide powder. Ta 2 O 5 powder is preferably used as the tantalum oxide powder. Nb 2 O 5 powder is preferably used as the niobium oxide powder.
The ratio of each oxide powder to be used is preferably adjusted so that the ratio of SnO 2 , Ta 2 O 5 and Nb 2 O 5 contained in the target oxide sintered body is within the range described above.
まず、各酸化物粉のスラリーを別個に調製する。スラリーの調製に用いる分散媒としては、各酸化物粉を分散させ得る液体を用いることができる。そのような分散媒としては、例えば水及び各種の有機溶媒が挙げられる。有機溶媒としては、例えばエタノールなどを用いることができる。これらの分散媒のうち、経済性及び取り扱いの容易さ等の観点から水を用いることが好ましい。
スラリーにおける分散媒の割合を、酸化物粉の質量に対して、好ましくは20質量%以上70質量%以下、更に好ましくは30質量%以上60質量%以下、一層好ましくは35質量%以上55質量%以下に設定すると、酸化物粉が分散媒に十分に分散する。 In this production method, slurries of the respective oxide powders are separately prepared, and the slurries are mixed to prepare a mixed slurry, thereby successfully producing an oxide sintered body in which the generation of pores is suppressed. As a result of investigations by the present inventors, it was found that it is advantageous in terms of obtaining. This procedure will be described in detail below.
First, slurries of each oxide powder are separately prepared. A liquid capable of dispersing each oxide powder can be used as a dispersion medium for preparing the slurry. Examples of such dispersion media include water and various organic solvents. As an organic solvent, for example, ethanol can be used. Among these dispersion media, it is preferable to use water from the viewpoint of economy and ease of handling.
The proportion of the dispersion medium in the slurry is preferably 20% by mass or more and 70% by mass or less, more preferably 30% by mass or more and 60% by mass or less, still more preferably 35% by mass or more and 55% by mass or less, relative to the mass of the oxide powder. The oxide powder is sufficiently dispersed in the dispersion medium when the following settings are made.
スラリー中に含まれる各酸化物粉の分散性を高める観点から、各スラリーに分散剤を配合することが好ましい。分散剤としては、酸化物粉の種類に応じて適切なものを用いることができる。例えばポリカルボン酸アンモニウム、ポリカルボン酸ナトリウム及びポリカルボン酸アミン塩などのポリカルボン酸塩;第4級カチオンポリマー;ポリアルキレングリコール等の非イオン系界面活性剤;及び第4級アンモニウム塩等のカチオン系界面活性剤などを用いることができる。これらの分散剤は一種を単独で用いることができ、あるいは二種以上を組み合わせて用いることができる。これらの分散剤のうち、酸化物粉の分散性の高さからポリカルボン酸塩を用いることが好ましく、とりわけポリカルボン酸アンモニウムを用いることが好ましい。
各スラリーに配合する分散剤の種類は同一であってもよく、あるいは異なっていてもよい。 Considering the dispersibility of the oxide powder in the dispersion medium, the concentration of the oxide powder in the slurry of each oxide powder is preferably 58% by mass or more and 84% by mass or less, and 62% by mass or more and 77% by mass. % or less, more preferably 64 mass % or more and 74 mass % or less.
From the viewpoint of enhancing the dispersibility of each oxide powder contained in the slurry, it is preferable to blend a dispersant into each slurry. As the dispersant, an appropriate one can be used according to the type of oxide powder. polycarboxylates such as ammonium polycarboxylates, sodium polycarboxylates and polycarboxylate amine salts; quaternary cationic polymers; nonionic surfactants such as polyalkylene glycols; and cations such as quaternary ammonium salts. system surfactants and the like can be used. These dispersants can be used singly or in combination of two or more. Among these dispersants, it is preferable to use polycarboxylates because of the high dispersibility of the oxide powder, and it is particularly preferable to use ammonium polycarboxylates.
The type of dispersant to be blended in each slurry may be the same or different.
各スラリーに配合する結合剤の濃度は、スラリーに含まれる酸化物粉の濃度や種類に応じて適切に選択される。スラリーにおける結合剤の濃度を、酸化物粉の質量に対して、好ましくは0.2質量%以上0.8質量%以下、更に好ましくは0.3質量%以上0.7質量%以下、一層好ましくは0.4質量%以上0.6質量%以下に設定すると、造粒物の強度を適度なものにすることができる。各スラリーにおける結合剤の濃度は同一でもよく、それぞれ異なっていてもよい。 Each slurry may contain a binder. By blending the binder, the strength of the granules can be moderated when the granules are obtained using the mixed slurry described later. As the binder, for example, various organic polymer materials can be used. Examples of organic polymer materials that can be used include polyvinyl alcohol and acrylic emulsion binders.
The concentration of the binder compounded in each slurry is appropriately selected according to the concentration and type of oxide powder contained in the slurry. The concentration of the binder in the slurry is preferably 0.2% by mass or more and 0.8% by mass or less, more preferably 0.3% by mass or more and 0.7% by mass or less, more preferably 0.7% by mass or less, relative to the mass of the oxide powder. is set to 0.4% by mass or more and 0.6% by mass or less, the strength of the granules can be made moderate. The binder concentration in each slurry may be the same or different.
各スラリーを混合して混合スラリーを得るためには、例えばボールミルやビーズミルなどのメディアミル装置を用いることが好ましいが、この手法に限られない。 After each slurry is prepared by the above procedure, each slurry is then mixed to prepare a mixed slurry. The mixing ratio of each slurry is preferably adjusted so that the ratio of SnO 2 , Ta 2 O 5 and Nb 2 O 5 contained in the target oxide sintered body is within the range described above.
In order to mix the slurries to obtain a mixed slurry, it is preferable to use a media mill such as a ball mill or bead mill, but the method is not limited to this method.
本製造方法においては、後述するとおり、混合スラリーを用い、スプレードライ法によって造粒物を得ることが好ましい。スプレードライ法を円滑に行うためには、混合スラリーに配合する分散剤の量を多くして該混合スラリーの粘度を下げることが有利である。しかし、分散剤の配合量を多くすると、スプレードライ法によって得られる造粒物が硬く潰れにくくなる傾向にある。そのような造粒物を用いて、酸化物焼結体の製造用の成形体を圧縮成形すると、圧縮過程において造粒物が潰れにくいことに起因して、成形体中に欠損部位が発生しやすくなる。そのような成形体を焼成すると、得られる焼結体が緻密なものとならず、欠損部位が発生してしまう。
一方、造粒物を潰れやすいものにする目的で混合スラリーに配合する分散剤の量を少なくすると、混合スラリーの粘度が上昇する傾向にあり、そのことに起因して形状の揃った造粒物を製造しにくくなる。そのような造粒物を用いて成形体を圧縮成形すると、やはり成形体中に欠損部位が発生しやすくなり、延いては焼結体が緻密なものとならず、欠損部位が発生してしまう。
これに対して、各酸化物粉のスラリーに分散剤を配合し、各スラリーを混合して混合スラリーを得ることによって、分散剤の配合量を少なくしても、混合スラリーの粘度上昇を抑制でき、分散性の良好な混合スラリーが得られることが本発明者の検討の結果判明した。そのような混合スラリーを用いて製造された焼結体は、欠損部位の発生が抑制された緻密なものとなる。 The advantages of preparing a slurry of each oxide powder and mixing the slurries to obtain a mixed slurry are as follows.
In this production method, as described later, it is preferable to use a mixed slurry and obtain granules by a spray drying method. In order to carry out the spray drying method smoothly, it is advantageous to reduce the viscosity of the mixed slurry by increasing the amount of the dispersant blended into the mixed slurry. However, when the content of the dispersant is increased, the granules obtained by the spray drying method tend to be hard and difficult to crush. When such granules are used to compression-mold a molded body for producing an oxide sintered body, the granules are less likely to be crushed during the compression process, resulting in defects in the molded body. easier. When such a molded body is fired, the resulting sintered body is not dense and has defects.
On the other hand, when the amount of the dispersant mixed in the mixed slurry is reduced for the purpose of making the granules easily crushable, the viscosity of the mixed slurry tends to increase, resulting in uniform-shaped granules. becomes difficult to manufacture. When a compact is compression-molded using such granules, defects are likely to occur in the compact, and the sintered compact will not be dense, resulting in defects. .
On the other hand, by adding a dispersant to the slurry of each oxide powder and mixing the slurries to obtain a mixed slurry, it is possible to suppress the increase in the viscosity of the mixed slurry even if the amount of the dispersant is reduced. As a result of investigations by the present inventors, it was found that a mixed slurry having good dispersibility can be obtained. A sintered body manufactured using such a mixed slurry is dense in which the generation of defective portions is suppressed.
従来の技術、例えば先に述べた特許文献1及び2に記載の技術においては、複数の金属元素を含む酸化物焼結体の製造に際し、各金属元素の酸化物粉を一括して分散媒に分散させてスラリーを調製していた。この方法でスラリーを調製すると、該スラリーに配合されている分散剤が、特定の酸化物に優先的に作用して、酸化物間で分散媒への分散性に差異が生じていたことが本発明者の検討の結果判明した。分散性に差異が生じると、スラリーから製造される造粒物における酸化物粉の状態、例えば潰れやすさの程度が不均一になり、そのことに起因して、最終的に得られる酸化物焼結体に孔部が発生しやすくなってしまうという不都合がある。分散性に差異が生じる理由は、分散剤と各酸化物粉との相互作用が、酸化物粉の種類によって相違するからである。そこで本製造方法においては、酸化物間で分散媒への分散性に差異が生じることを防止するために、各酸化物粉を一括して分散媒に分散させることに代えて、酸化物粉ごとに別個に分散媒に分散させ、そのときに分散剤を分散媒に配合する手法を採用している。この手法を採用することで、分散剤が各酸化物粉に確実に作用するので、混合スラリーにおける各酸化物粉の分散性に差異が生じづらくなる。 Preparing a slurry of each oxide powder and mixing the slurries to obtain a mixed slurry has another advantage as described below.
In the conventional technology, for example, the technology described in the above-mentioned Patent Documents 1 and 2, when producing an oxide sintered body containing a plurality of metal elements, the oxide powder of each metal element is collectively used as a dispersion medium. A slurry was prepared by dispersing. When the slurry was prepared by this method, the dispersant contained in the slurry preferentially acted on a specific oxide, and it was found that there was a difference in the dispersibility of the oxides in the dispersion medium. This was found out as a result of examination by the inventor. If there is a difference in dispersibility, the state of the oxide powder in the granules produced from the slurry, for example, the degree of crumbability, becomes uneven, and as a result, the finally obtained oxide sintered product becomes uneven. There is an inconvenience that holes are likely to occur in the body. The reason for the difference in dispersibility is that the interaction between the dispersant and each oxide powder differs depending on the type of oxide powder. Therefore, in this production method, in order to prevent differences in dispersibility in the dispersion medium between oxides, instead of dispersing each oxide powder in the dispersion medium at once, each oxide powder is A method of dispersing them separately in a dispersion medium and blending a dispersant with the dispersion medium at that time is employed. By adopting this method, the dispersing agent reliably acts on each oxide powder, so that it becomes difficult to cause a difference in the dispersibility of each oxide powder in the mixed slurry.
成形体が得られたら、必要に応じて該成形体を脱脂工程に付してもよい。成形体を脱脂工程に付すことで、該成形体に含まれる有機物、例えば分散剤や結合剤を除去することができる。脱脂工程は、成形体を例えば大気雰囲気下、500℃以上900℃以下に加熱することで行われる。 After the granules are obtained, the granules are filled into a mold to produce a compact. For molding, a cold press method such as cold isostatic pressing can be employed. The pressure during molding is preferably set to 600 kg/cm 2 or more and 1200 kg/cm 2 or less from the viewpoint of obtaining a dense molded body.
After obtaining the molded article, the molded article may be subjected to a degreasing step, if necessary. By subjecting the molded body to the degreasing process, organic substances contained in the molded body, such as dispersants and binders, can be removed. The degreasing step is performed by heating the compact to, for example, 500° C. or higher and 900° C. or lower in an air atmosphere.
このようにして得られたスパッタリングターゲットは、スパッタ膜、例えば透明導電膜の製造に好適に用いられる。このスパッタリングターゲットを用いて形成されたスパッタ膜は、スパッタリングターゲット材と同様の組成を有することができる。スパッタ膜の比抵抗率は好ましくは9mΩ・cm以下という低抵抗のものになる。 The oxide sintered body thus obtained can be processed into a predetermined size by grinding or the like, and used as a sputtering target material. A sputtering target is obtained by joining the obtained sputtering target material to a backing plate. As the backing plate, for example, stainless steel, copper, titanium, or the like can be used. A low melting point solder such as indium can be used for joining the target material and the backing plate.
The sputtering target thus obtained is suitably used for producing a sputtered film such as a transparent conductive film. A sputtered film formed using this sputtering target can have the same composition as the sputtering target material. The specific resistivity of the sputtered film is preferably as low as 9 mΩ·cm or less.
粒径D50が0.7μmであるSnO2粉と、粒径D50が0.6μmであるTa2O5粉と、粒径D50が0.9μmであるNb2O5粉とを用意した。粒径D50は、マイクロトラックベル株式会社製の粒度分布測定装置MT3300EXIIを用いて測定した。分散媒には水を使用した。測定物質の屈折率は2.20とした。
各酸化物粉を別個にポットに入れ、各酸化物粉の質量に対して、0.5質量%のポリビニルアルコールと、0.02質量%のポリカルボン酸アンモニウムと、50質量%の水とを加え、ボールミルを用いて20時間にわたり混合して各スラリーを調製した。
調製した各スラリーを混ぜ合わせ、ボールミルを用いて60分間にわたり混合して混合スラリーを得た。各スラリーの混合割合は、各粉の合計に対してSnO2が96.5質量%、Ta2O5が3.0質量%、Nb2O5が0.5質量%となるようにした。 [Example 1]
SnO 2 powder with a particle size D50 of 0.7 μm, Ta 2 O 5 powder with a particle size D50 of 0.6 μm, and Nb 2 O 5 powder with a particle size D50 of 0.9 μm were prepared. The particle size D50 was measured using a particle size distribution analyzer MT3300EXII manufactured by Microtrack Bell Co., Ltd. Water was used as the dispersion medium. The refractive index of the substance to be measured was 2.20.
Each oxide powder is separately placed in a pot, and 0.5% by weight of polyvinyl alcohol, 0.02% by weight of ammonium polycarboxylate, and 50% by weight of water are added to the weight of each oxide powder. In addition, each slurry was prepared by mixing for 20 hours using a ball mill.
The prepared slurries were mixed and mixed for 60 minutes using a ball mill to obtain a mixed slurry. The mixing ratio of each slurry was such that SnO 2 was 96.5 mass %, Ta 2 O 5 was 3.0 mass %, and Nb 2 O 5 was 0.5 mass % with respect to the total of each powder.
得られた造粒物を158mm×640mmの金型に充填し、800kg/cm2の圧力でプレス成形して成形体を得た。得られた成形体を大気雰囲気下に750℃で6時間加熱して脱脂した。
脱脂後の成形体を焼成して焼結体を作製した。焼成は酸素濃度が20vol%である雰囲気中、焼成温度1600℃、焼成時間8時間、昇温速度50℃/h、降温速度50℃/hで行った。
このようにして得られた焼結体を切削加工し、幅100mm、長さ240mm、厚さ8mmであり、表面粗さRaが1.0μmである酸化物焼結体を得た。切削加工には#170の砥石を使用した。 The mixed slurry was supplied to a spray drying apparatus, and spray drying was performed under the conditions of an atomizer rotation speed of 14000 rpm, an inlet temperature of 200°C and an outlet temperature of 80°C to obtain granules. The particle diameter D50 of the granules was 45 μm.
The obtained granules were filled in a mold of 158 mm×640 mm and press-molded at a pressure of 800 kg/cm 2 to obtain a compact. The resulting compact was degreased by heating at 750° C. for 6 hours in an air atmosphere.
A sintered body was produced by sintering the molded body after degreasing. Firing was performed in an atmosphere with an oxygen concentration of 20 vol % at a firing temperature of 1600° C., a firing time of 8 hours, a temperature increase rate of 50° C./h, and a temperature decrease rate of 50° C./h.
The sintered body thus obtained was cut to obtain an oxide sintered body having a width of 100 mm, a length of 240 mm, a thickness of 8 mm, and a surface roughness Ra of 1.0 μm. A #170 whetstone was used for cutting.
SnO2粉、Ta2O5粉、及びNb2O5粉合計に対して、各粉の割合が以下の表1になるように各粉を混合した。これ以外は実施例1と同様にして酸化物焼結体を得た。 [Examples 2 and 3]
Each powder was mixed so that the ratio of each powder to the total of SnO 2 powder, Ta 2 O 5 powder, and Nb 2 O 5 powder is shown in Table 1 below. An oxide sintered body was obtained in the same manner as in Example 1 except for this.
実施例1と同様のSnO2粉と、Ta2O5粉と、Nb2O5粉とを用意した。
各粉を、各粉の合計に対してSnO2が94質量%、Ta2O5が5質量%、Nb2O5が1質量%となるように秤量し、21時間乾式混合した。
4質量%ポリビニルアルコール水溶液を、混合粉に対して6質量%添加した。乳鉢を用いてポリビニルアルコールと混合粉とを混合した後、混合物を5.5メッシュの篩に通して、成形用の混合粉を得た。
これら以外は実施例1と同様にして酸化物焼結体を得た。 [Comparative Example 1]
The same SnO 2 powder, Ta 2 O 5 powder, and Nb 2 O 5 powder as in Example 1 were prepared.
Each powder was weighed to give 94% by weight SnO2 , 5 % by weight Ta2O5 and 1 % by weight Nb2O5 based on the total weight of each powder and dry mixed for 21 hours.
6% by mass of a 4% by mass polyvinyl alcohol aqueous solution was added to the mixed powder. After the polyvinyl alcohol and the mixed powder were mixed using a mortar, the mixture was passed through a 5.5-mesh sieve to obtain a mixed powder for molding.
An oxide sintered body was obtained in the same manner as in Example 1 except for these.
実施例1と同様のSnO2粉と、Ta2O5粉と、Nb2O5粉とを用意した。
すべての粉をポットに入れ、粉全量に対して、0.5質量%のポリビニルアルコールと、0.02質量%のポリカルボン酸アンモニウムと、50質量%の水とを加え、ボールミルを用いて20時間にわたり混合して混合スラリーを調製した。混合スラリーにおける各粉の割合は、各粉の合計に対してSnO2が94質量%、Ta2O5が5質量%、Nb2O5が1質量%となるようにした。これ以外は実施例1と同様にして酸化物焼結体を得た。 [Comparative Example 2]
The same SnO 2 powder, Ta 2 O 5 powder, and Nb 2 O 5 powder as in Example 1 were prepared.
Put all the powder in a pot, add 0.5% by weight of polyvinyl alcohol, 0.02% by weight of ammonium polycarboxylate, and 50% by weight of water to the total amount of powder, and add 20% by weight using a ball mill. A mixed slurry was prepared by mixing for a period of time. The ratio of each powder in the mixed slurry was such that SnO 2 was 94% by mass, Ta 2 O 5 was 5% by mass, and Nb 2 O 5 was 1% by mass with respect to the total of each powder. An oxide sintered body was obtained in the same manner as in Example 1 except for this.
本比較例においては、実施例2で用いた分散剤である0.02質量%のポリカルボン酸アンモニウムの濃度を0.05質量%に増量した。これ以外は実施例2と同様にして酸化物焼結体を得た。 [Comparative Example 3]
In this comparative example, the concentration of 0.02% by mass of ammonium polycarboxylate, which is the dispersant used in Example 2, was increased to 0.05% by mass. An oxide sintered body was obtained in the same manner as in Example 2 except for this.
実施例及び比較例で得られた酸化物焼結体について、孔部面積率、最大円相当径、最大フェレ径、相対密度、抗折強度を以下の方法で測定した。
また、実施例及び比較例で得られた酸化物焼結体を用いてスパッタリングターゲットを製造し、該ターゲットを用いてスパッタリングを行ったときの異常放電の発生の程度、及びターゲットの割れの発生の程度を以下の方法で評価した。
以上の結果を、以下の表1に示す。 〔evaluation〕
The pore area ratio, maximum equivalent circle diameter, maximum Feret diameter, relative density, and bending strength of the oxide sintered bodies obtained in Examples and Comparative Examples were measured by the following methods.
In addition, a sputtering target was produced using the oxide sintered bodies obtained in Examples and Comparative Examples, and the degree of occurrence of abnormal discharge and cracking of the target when sputtering was performed using the target. The degree was evaluated by the following method.
The above results are shown in Table 1 below.
(1)酸化物焼結体の断面の調製
酸化物焼結体を切断して得られた切断面を、エメリー紙#180、#400、#800、#1000、#2000を用いて段階的に研磨し、最後にバフ研磨して鏡面に仕上げた。
(2)孔部面積率、最大円相当径及び最大フェレ径の測定
酸化物焼結体の断面に対し、走査型電子顕微鏡(SU3500、(株)日立ハイテクノロジーズ製)を用いて、倍率200倍、445.3μm×634.6μmの範囲のBSE-COMP像(以下、「SEM像」ともいう。)を撮影した。粒子解析ソフトウエア(「粒子解析Version3.0」、住友金属テクノロジー株式会社製)を用い、SEM像をトレースしてスキャナで画像認識させた。この画像を二値化した。この際、1画素がμm単位で表示されるように換算値を設定した。
次いで、SEM像に写っているすべての孔部を対象として、その面積及び面積の総和を求めた。視野面積(445.3μm×634.6μm)に対する孔部の面積の総和の百分率の値を求めた。異なる10個のSEM像を対象として測定された百分率の算術平均値を求め、この算術平均値を本発明における孔部面積率とした。
また、孔部面積率を求める過程で測定された孔部の面積に基づき、孔部の円相当径を算出した。異なる10個のSEM像を対象として測定されたすべての円相当径のうち、最大値を孔部の最大円相当径とした。
以上の操作とは別に、SEM像に写っているすべての孔部を対象として、水平方向の全画素数に基づき水平フェレ径(μm)を算出し、垂直方向の全画素数に基づき垂直フェレ径(μm)を算出した。異なる10個のSEM像を対象として測定されたすべての水平フェレ径及び垂直フェレ径のうち、最大値を孔部の最大フェレ径とした。 [Pore area ratio, maximum circle equivalent diameter and maximum Feret diameter]
(1) Preparation of cross section of oxide sintered body The cut surface obtained by cutting the oxide sintered body was stepwise using #180, #400, #800, #1000, and #2000 emery papers. Polished and finally buffed to a mirror finish.
(2) Measurement of hole area ratio, maximum circle equivalent diameter and maximum Feret diameter Using a scanning electron microscope (SU3500, manufactured by Hitachi High-Technologies Co., Ltd.) for the cross section of the oxide sintered body, 200 times magnification , 445.3 μm×634.6 μm BSE-COMP image (hereinafter also referred to as “SEM image”) was taken. Using particle analysis software (“Particle Analysis Version 3.0” manufactured by Sumitomo Metal Technology Co., Ltd.), the SEM image was traced and image recognition was performed with a scanner. This image was binarized. At this time, the conversion value was set so that one pixel was displayed in units of μm.
Next, the area and the sum of the areas were obtained for all the holes shown in the SEM image. The percentage value of the total area of the holes relative to the visual field area (445.3 μm×634.6 μm) was obtained. The arithmetic average value of the percentages measured for 10 different SEM images was obtained, and this arithmetic average value was defined as the pore area ratio in the present invention.
In addition, the equivalent circle diameter of the pore was calculated based on the area of the pore measured in the process of determining the area ratio of the pore. Among all equivalent circle diameters measured for ten different SEM images, the maximum value was taken as the maximum equivalent circle diameter of the hole.
Apart from the above operations, for all the holes in the SEM image, the horizontal Feret diameter (μm) is calculated based on the total number of pixels in the horizontal direction, and the vertical Feret diameter is calculated based on the total number of pixels in the vertical direction. (μm) was calculated. Among all horizontal Feret diameters and vertical Feret diameters measured for ten different SEM images, the maximum value was taken as the maximum Feret diameter of the hole.
アルキメデス法に基づき相対密度を測定した。具体的には、酸化物焼結体の空中質量を体積(焼結体の水中質量/計測温度における水比重)で除し、下記式(1)に基づく理論密度ρ(g/cm3)に対する百分率の値を相対密度(単位:%)とした。
ρ={(C1/100)/ρ1+(C2/100)/ρ2+(C3/100)/ρ3}-1 (1)
式(1)中のC1~C3はそれぞれターゲット材の構成物質の含有量(質量%)を示しており、ρ1~ρ3はC1~C3に対応する各構成物質の密度(g/cm3)を示している。
本発明の場合、ターゲット材の構成物質の含有量(質量%)は、SnO2、Ta2O5、Nb2O5と考え、例えば
C1:ターゲット材のSnO2の質量%
ρ1:SnO2の密度(6.95g/cm3)
C2:ターゲット材のTa2O5の質量%
ρ2:Ta2O5の密度(8.74g/cm3)
C3:ターゲット材のNb2O5の質量%
ρ3:Nb2O5の密度(4.47g/cm3)
を式(1)に適用することで理論密度ρを算出できる。
なお、SnO2の質量%、Ta2O5の質量%及びNb2O5の質量%は、ICP-OES分析によるターゲット材の各元素の分析結果から求めることができる。 [Relative density]
Relative density was measured based on the Archimedes method. Specifically, the air mass of the oxide sintered body is divided by the volume (the mass of the sintered body in water/the specific gravity of water at the measurement temperature), and the theoretical density ρ (g/cm 3 ) based on the following formula (1) The percentage value was defined as the relative density (unit: %).
ρ={(C 1 /100)/ρ 1 +(C 2 /100)/ρ 2 +(C 3 /100)/ρ 3 } −1 (1)
C 1 to C 3 in the formula (1) respectively indicate the content (% by mass) of the constituent substances of the target material, and ρ 1 to ρ 3 are the densities ( g/cm 3 ).
In the case of the present invention, the content (% by mass) of the constituent substances of the target material is considered to be SnO 2 , Ta 2 O 5 and Nb 2 O 5 , for example C1: mass % of SnO 2 in the target material
ρ1: Density of SnO 2 (6.95 g/cm 3 )
C2: % by mass of Ta 2 O 5 in target material
ρ2: Density of Ta 2 O 5 (8.74 g/cm 3 )
C3: % by mass of Nb 2 O 5 in target material
ρ3: Density of Nb 2 O 5 (4.47 g/cm 3 )
is applied to equation (1), the theoretical density ρ can be calculated.
The mass % of SnO 2 , the mass % of Ta 2 O 5 and the mass % of Nb 2 O 5 can be obtained from the analysis results of each element of the target material by ICP-OES analysis.
島津製作所製のオートグラフ(登録商標)AGS-500Bを用いた。酸化物焼結体から切り出した試料片(全長36mm以上、幅4.0mm、厚さ3.0mm)を対象とし、JIS R1601の3点曲げ強さの測定方法に従って測定した。 [Bending strength]
Autograph (registered trademark) AGS-500B manufactured by Shimadzu Corporation was used. A sample piece (length 36 mm or more, width 4.0 mm, thickness 3.0 mm) cut out from the oxide sintered body was measured according to the JIS R1601 three-point bending strength measurement method.
実施例及び比較例で得られた酸化物焼結体を用いてスパッタリングターゲットを作製し、該ターゲットをDCマグネトロンスパッタ装置に取り付けてスパッタリングを行った。スパッタリングの条件は以下のとおりである。
・到達真空度:3×10-6Pa
・スパッタ圧力:0.4Pa
・酸素分圧:1×10-3Pa
・投入電力量時間:2W/cm2
・時間:25時間
前記の条件でスパッタリングを行っている間に発生したアーキング回数を、電源に付属するアーキングカウンターで計測した。アーキングカウンターとして、μArc Moniter MAM Genesis MAM データコレクター Ver.2.02(LANDMARK TECHNOLOGY社製)を用いた。評価基準は以下のとおりである。
A:アーキング回数が5回未満
B:アーキング回数が5回以上30回未満
C:アーキング回数が30回以上
前記の条件でスパッタリングを行っている間に、目視観察によって、ターゲットに割れが発生したか否かも併せて評価した。 [Occurrence of abnormal discharge and degree of target cracking]
Sputtering targets were prepared using the oxide sintered bodies obtained in Examples and Comparative Examples, and the targets were attached to a DC magnetron sputtering apparatus to carry out sputtering. Sputtering conditions are as follows.
・Attainment vacuum: 3×10 −6 Pa
・Sputtering pressure: 0.4 Pa
・ Oxygen partial pressure: 1 × 10 -3 Pa
・ Input power amount time: 2 W / cm 2
Time: 25 hours The number of times of arcing that occurred during sputtering under the above conditions was measured with an arcing counter attached to the power supply. As an arcing counter, μArc Monitor MAM Genesis MAM Data Collector Ver. 2.02 (manufactured by LANDMARK TECHNOLOGY) was used. Evaluation criteria are as follows.
A: less than 5 times of arcing B: more than 5 times less than 30 times of arcing C: more than 30 times of arcing During the sputtering under the above conditions, whether cracks occurred in the target by visual observation. It was also evaluated whether or not.
これに対して、スプレードライ法を用いずに焼成用の成形体を製造した比較例1では、成形体を緻密にすることができず、該成形体から製造された酸化物焼結体に多数の孔部が生じてしまった。
また、原料粉ごとにスラリーを調製しなかった比較例2では、造粒物が不均一になってしまい、成形体を緻密にすることができず、該成形体から製造された酸化物焼結体に多数の孔部が生じてしまった。
比較例2よりも分散剤の配合量を多くした比較例3では、造粒物は均一になったものの、硬く潰れにくいものであったことから、成形体を緻密にすることができず、該成形体から製造された酸化物焼結体に多数の孔部が生じてしまった。 As is clear from the results shown in Table 1, when the oxide sintered body obtained in each example is used as a sputtering target material, the oxide sintered body obtained in the comparative example is used as a sputtering target material. In comparison, abnormal discharge is less likely to occur during sputtering, and target cracking is less likely to occur.
On the other hand, in Comparative Example 1 in which the compact for firing was produced without using the spray drying method, the compact could not be made dense, and the oxide sintered compact produced from the compact had many A hole has occurred.
In addition, in Comparative Example 2 in which a slurry was not prepared for each raw material powder, the granules became non-uniform and the compact could not be made dense, and the oxide sinter produced from the compact I have many holes in my body.
In Comparative Example 3, in which the amount of the dispersant was larger than that in Comparative Example 2, the granules were uniform, but were hard and hard to be crushed. A large number of holes were generated in the oxide sintered body produced from the molded body.
本発明に係る酸化物焼結体を用いてスパッタリングを行うと、従来の酸化物焼結体を用いた場合に比較して、スパッタリング時の異常放電や割れの発生を抑制しつつ成膜することが可能であることから、余分な不良品の発生を抑制することができ、延いては廃棄物の発生を低減することができる。つまり、それら廃棄物の処分におけるエネルギーコストを削減することが可能となる。このことは天然資源の持続可能な管理及び効率的な利用、並びに脱炭素(カーボンニュートラル)化を達成することにつながる。 According to the present invention, an oxide sintered body that has few holes or has a small size even if there are holes, and is less likely to cause abnormal discharge or cracks when used as a sputtering target material. Methods of manufacture and sputtering target materials are provided.
When sputtering is performed using the oxide sintered body according to the present invention, it is possible to form a film while suppressing the occurrence of abnormal discharge and cracking during sputtering compared to the case of using a conventional oxide sintered body. is possible, it is possible to suppress the generation of extra defective products, and furthermore it is possible to reduce the generation of waste. That is, it becomes possible to reduce the energy cost in disposing of those wastes. This will lead to sustainable management and efficient use of natural resources, as well as achieving decarbonization (carbon neutrality).
Claims (12)
- スズ元素、タンタル元素及びニオブ元素を含む酸化物焼結体であって、
前記酸化物焼結体の断面観察における単位面積当たりの孔部の面積率が1%以下である酸化物焼結体。 An oxide sintered body containing a tin element, a tantalum element and a niobium element,
An oxide sintered body having an area ratio of pores per unit area of 1% or less in cross-sectional observation of the oxide sintered body. - スズ元素、タンタル元素及びニオブ元素を含む酸化物焼結体であって、
前記酸化物焼結体の断面観察における孔部の最大円相当径が20μm以下である酸化物焼結体。 An oxide sintered body containing a tin element, a tantalum element and a niobium element,
The oxide sintered body, wherein the maximum equivalent circle diameter of the pores is 20 μm or less in cross-sectional observation of the oxide sintered body. - スズ元素、タンタル元素及びニオブ元素を含む酸化物焼結体であって、
前記酸化物焼結体の断面観察における孔部の最大フェレ径が50μm以下である酸化物焼結体。 An oxide sintered body containing a tin element, a tantalum element and a niobium element,
The oxide sintered body has a maximum Feret diameter of 50 μm or less in a hole when observed in cross section of the oxide sintered body. - スズ元素、タンタル元素及びニオブ元素を含む酸化物焼結体であって、
前記酸化物焼結体の断面観察における単位面積当たりの孔部の面積率が1%以下であり、
前記孔部の最大円相当径が20μm以下であり、
前記孔部の最大フェレ径が50μm以下である酸化物焼結体。 An oxide sintered body containing a tin element, a tantalum element and a niobium element,
The area ratio of the pores per unit area in cross-sectional observation of the oxide sintered body is 1% or less,
The maximum circle equivalent diameter of the hole is 20 μm or less,
The oxide sintered body, wherein the maximum Feret diameter of the pores is 50 μm or less. - アルキメデス法に基づき測定された相対密度が99.6%以上である、請求項1ないし4のいずれか一項に記載の酸化物焼結体。 The oxide sintered body according to any one of claims 1 to 4, which has a relative density of 99.6% or more as measured by the Archimedes method.
- JIS R1601に準拠して測定された抗折強度が180MPa以上である、請求項1ないし4のいずれか一項に記載の酸化物焼結体。 The oxide sintered body according to any one of claims 1 to 4, which has a bending strength of 180 MPa or more as measured according to JIS R1601.
- SnO2換算で80質量%以上100質量%未満のスズ元素と、Ta2O5換算で0質量%超10質量%以下のタンタル元素と、Nb2O5換算で0質量%超10質量%以下のニオブ元素とを含む、請求項1ないし4のいずれか一項に記載の酸化物焼結体。 A tin element of 80% by mass or more and less than 100% by mass in terms of SnO 2 , a tantalum element in an amount of more than 0% by mass to 10% by mass or less in terms of Ta 2 O 5 , and more than 0% by mass to 10% by mass or less in terms of Nb 2 O 5 5. The oxide sintered body according to any one of claims 1 to 4, comprising a niobium element.
- SnO2換算で90質量%以上96.5質量%以下のスズ元素と、Ta2O5換算で3質量%以上7質量%以下のタンタル元素と、Nb2O5換算で0.5質量%以上3質量%以下のニオブ元素とを含む、請求項1ないし4のいずれか一項に記載の酸化物焼結体。 90% by mass or more and 96.5% by mass or less of tin in terms of SnO2 , 3% by mass or more and 7% by mass or less of tantalum in terms of Ta2O5 , and 0.5% by mass or more in terms of Nb2O5 5. The oxide sintered body according to any one of claims 1 to 4, containing 3% by mass or less of the niobium element.
- 請求項1ないし4のいずれか一項に記載の酸化物焼結体からなるスパッタリングターゲット材。 A sputtering target material comprising the oxide sintered body according to any one of claims 1 to 4.
- 請求項9に記載のスパッタリングターゲット材を用いたスパッタ膜。 A sputtered film using the sputtering target material according to claim 9.
- スズ酸化物のスラリー、タンタル酸化物のスラリー及びニオブ酸化物のスラリーをそれぞれ別個に調製し、
前記各スラリーを混合して混合スラリーを調製し、
前記混合スラリーをスプレードライ法に付して造粒物を製造し、
前記造粒物を用いて成形体を製造し、
前記成形体を焼結させる、酸化物焼結体の製造方法であって、
前記スズ酸化物のスラリー、前記タンタル酸化物のスラリー及び前記ニオブ酸化物のスラリーのそれぞれに分散剤を含有させておく、酸化物焼結体の製造方法。 separately preparing a tin oxide slurry, a tantalum oxide slurry and a niobium oxide slurry;
Mixing the respective slurries to prepare a mixed slurry,
The mixed slurry is subjected to a spray drying method to produce granules,
Producing a compact using the granules,
A method for producing an oxide sintered body, in which the compact is sintered,
A method for producing an oxide sintered body, wherein a dispersing agent is added to each of the tin oxide slurry, the tantalum oxide slurry, and the niobium oxide slurry. - 前記分散剤がポリカルボン酸塩である、請求項11に記載の製造方法。 The production method according to claim 11, wherein the dispersant is a polycarboxylate.
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JP2008150224A (en) * | 2006-12-14 | 2008-07-03 | Kao Corp | Method of manufacturing ceramic |
WO2008111324A1 (en) * | 2007-03-14 | 2008-09-18 | Asahi Glass Co., Ltd. | Transparent conductive film and method for manufacturing the transparent conductive film, and sputtering target used in the method |
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