WO2023027262A1 - Appareil de dépôt de couche atomique pour poudres - Google Patents

Appareil de dépôt de couche atomique pour poudres Download PDF

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Publication number
WO2023027262A1
WO2023027262A1 PCT/KR2021/018982 KR2021018982W WO2023027262A1 WO 2023027262 A1 WO2023027262 A1 WO 2023027262A1 KR 2021018982 W KR2021018982 W KR 2021018982W WO 2023027262 A1 WO2023027262 A1 WO 2023027262A1
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WO
WIPO (PCT)
Prior art keywords
powder
reactor
mesh structure
gas
atomic layer
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Application number
PCT/KR2021/018982
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English (en)
Korean (ko)
Inventor
김재웅
송수한
박형상
Original Assignee
(주)아이작리서치
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Filing date
Publication date
Application filed by (주)아이작리서치 filed Critical (주)아이작리서치
Publication of WO2023027262A1 publication Critical patent/WO2023027262A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells

Definitions

  • the present invention relates to a powder coating apparatus, and more particularly, to an atomic layer deposition apparatus for powder capable of preventing powder aggregation at a lower portion.
  • ALD atomic layer deposition
  • the atomic layer deposition process is a vacuum process in which atomic layer deposition is performed. It has excellent step coating properties and is capable of adjusting the thickness in units of several nanometers, so it is a very advantageous method for coating the surface of a small powder.
  • this bottom powder compaction phenomenon removes voids between the powders and interferes with the inflow of the source and reaction gas from the bottom, so that the atomic layer deposition process is not performed, and the source of the equipment is not performed because the internal purge is not performed. There are problems with clogged supply lines.
  • the present invention is intended to solve various problems, including the above problems, and solves the compaction phenomenon of the lower part of the powder that hinders the inflow of the lower gas through a structure in which the mesh surface operates simultaneously with the central axis based on the lower double mesh
  • And friction for powder dispersion aims to provide an atomic layer deposition apparatus for powder that interacts with the inside of the reaction chamber to improve uniformity.
  • these tasks are illustrative, and the scope of the present invention is not limited thereby.
  • An atomic layer deposition apparatus for powder according to the spirit of the present invention for solving the above problems includes a cylindrical reactor in which a powder receiving space is formed in which powder can be accommodated;
  • a stirring device including a drive shaft portion formed to be rotatable with respect to the central axis of the reactor and a stirring portion formed on the drive shaft portion to stir the powder; a lower mesh structure coupled to a lower portion of the reactor to prevent external leakage of the powder;
  • a shower head disposed below the lower mesh structure and bonded to the lower portion of the reactor to supply at least one of a raw material gas, a purge gas, and a reaction gas from the bottom to the top to provide it to the gas flow space.
  • the mesh is formed to cover the top of the reactor, the gas supplied into the reactor is exhausted to the outside, and the powder loaded inside the reactor is not leaked to the outside. It may further include an upper mesh structure formed so that the drive unit formed outside the reactor and the drive shaft unit formed inside the reactor are connected in a central region.
  • the upper mesh structure so as to supply the powder to the inside of the reactor, at least a portion of the powder injection unit formed as a valve communicating the inside and outside of the reactor; may include.
  • a support bearing formed between the drive shaft portion and the shower head so that the drive shaft portion can be rotated while being supported by the shower head may include.
  • a powder inflow prevention unit coupled to the lower portion of the upper mesh structure so that powder does not flow between the drive shaft unit and the upper mesh structure, and formed to surround the upper region of the drive shaft unit;
  • the stirring unit may be formed by selecting at least one of a helical type, a ribbon type, a ribbon helical type, an anchor type, a turbine type, a propeller type, and combinations thereof.
  • the lower mesh surface in the reaction chamber operates simultaneously with the central axis to relieve the compaction effect at the bottom to facilitate the flow of the source and reaction gas, and for powder dispersion. Friction can interact with the interior of the reaction chamber to improve uniformity.
  • the dilution rate inside the powder is increased, and thus, it has an effect of obtaining uniform deposition characteristics between the powder particles.
  • the scope of the present invention is not limited by these effects.
  • FIG. 1 is a transmittance diagram showing an atomic layer deposition apparatus for powder according to some embodiments of the present invention.
  • FIG. 2 is a cross-sectional view showing a lower portion of the atomic layer deposition apparatus for powder of FIG. 1 .
  • FIG. 3 is a cross-sectional view showing an upper portion of the atomic layer deposition apparatus for powder of FIG. 1 .
  • FIG. 1 is a transmittance diagram showing an atomic layer deposition apparatus for powder according to some embodiments of the present invention
  • FIG. 2 is a cross-sectional view showing a lower portion of the atomic layer deposition apparatus for powder of FIG. 1
  • FIG. 3 is a view for powder of FIG. It is a cross-sectional view showing the top of the atomic layer deposition apparatus.
  • the atomic layer deposition apparatus for powder includes a reactor 100, a stirring device 200, an auxiliary mesh structure 300, and a lower mesh structure ( 400) and a shower head 500.
  • the reactor 100 has a powder receiving space (A) in which powder can be accommodated.
  • the reactor 100 has a powder accommodating space (A) in which powder can be filled, and selects at least one of a source gas, a purge gas, and a reaction gas in the powder accommodating space (A). It may be a cylindrical structure capable of being sealed by supplying gas.
  • the inside of the reactor 100 may be filled with powder, and a processing gas is injected from at least one surface of the reactor 100 so that the processing gas moves into the reactor 100 and the processing gas is added to the filled powder. Being in contact, atomic layer deposition can be performed.
  • the reactor 100 is not limited to a cylinder, and all tubular structures formed in a variety of shapes, such as a polygonal cylinder shape or an elliptical cylinder shape, may be applied.
  • the stirring device 200 may include a driving shaft part 210 formed to be rotatable about the central axis of the reactor 100 and a stirring part 220 formed on the driving shaft part 210 so as to stir the powder. .
  • the driving shaft unit 210 is a shaft formed to rotate the stirring unit 220 inside the reactor 100 .
  • the driving shaft unit 210 is formed at the center of the reactor 100 and can transfer rotational force generated outside the reactor 100 to the stirring unit 220 .
  • the agitator 220 is formed in the powder accommodating space (A) inside the reactor 100 to stir the powders filled in the powder accommodating space (A).
  • the stirring unit 220 may be formed by selecting at least one of a helical type, a ribbon type, a ribbon helical type, an anchor type, a turbine type, a propeller type, and combinations thereof.
  • the auxiliary mesh structure 300 is formed on the bottom of the reactor 100 to prevent downward leakage of the powder, and is coupled to the bottom of the drive shaft 210 to prevent the powder from leaking. ) can be rotated according to the rotation of
  • the auxiliary mesh structure 300 may be formed inside the reactor 100 to support the powder accommodated in the powder receiving space (A). That is, it may be formed so that powder does not fall downward of the auxiliary mesh structure 300 .
  • the auxiliary mesh structure 300 may include a flange-shaped body portion 310 coupled to the drive shaft portion 210 as a whole by having a central portion vertically penetrated and the driving shaft portion 210 coupled to the central portion.
  • a first mesh network 320 may be formed on at least a portion of the auxiliary mesh structure 300 .
  • the powder may be loaded on the top of the first mesh network 320, and the gas supplied from the bottom of the auxiliary mesh structure 300 may flow between the first mesh networks 320 and be supplied to the powder loaded on the top. there is.
  • the first mesh network 320 may include micro-holes. Accordingly, the processing gas supplied to the powder accommodating space A may move into the reactor 100 through the first mesh network 320 .
  • the auxiliary mesh structure 300 rotates in conjunction with the rotation of the driving shaft 210, the powder loaded on top of the auxiliary mesh structure 300 may also rotate. At this time, the mixing of the powders loaded on the upper portion of the auxiliary mesh structure 300 can be uniformly mixed by friction between the inner wall surface of the reactor 100 and the stirring device 200.
  • the first mesh network 320 may be used by adjusting the aperture ratio in various ways according to the particle size of the powder to be used.
  • the material of the first mesh network 320 may be coated with a material that does not easily react, such as AlOx or SiOx, to the stainless steel material according to the characteristics of the source gas used. Accordingly, an anti-deposition film may be formed through various materials and various coatings according to the type of the processing gas.
  • the auxiliary mesh structure 300 may include a fixing part 330 coupled to the body part 310 so that the first mesh network 320 may be fixed to a portion of the auxiliary mesh structure 300 .
  • the central portion of the fixing part 330 passes through the upper and lower portions, and an accommodating part capable of accommodating the first mesh network 320 is formed in an area other than the central part of the fixing part 330, and a drive shaft portion is formed in the center of the fixing part 330. (210) can be combined.
  • the fixing part 330 is coupled to the lower part of the main body part 310 coupled to the drive shaft part 210, and may be fastened so as to be fixed with the main body part 310.
  • a bearing accommodating part to which a bearing can be coupled may be formed at a lower portion of the fixing part 330 .
  • a lower flange portion 110 may be coupled to a lower portion of the reactor 100 .
  • the lower flange portion 110 is formed in a disk shape, the inside penetrates vertically to include an inner diameter, and the outer surface is formed as a stepped portion and may include an upper outer diameter that is the outer surface of the upper portion of the stepped portion.
  • the lower flange portion 110 is coupled to the lower portion of the reactor 100 so that the outer diameter of the upper portion can contact and be coupled to the inner diameter of the reactor 100 .
  • a sealing portion may be formed between the outer diameter of the upper part and the diameter of the reactor 100 .
  • the lower flange portion 110 is inserted into the reactor 100 with the outer diameter of the upper portion to partially block a space in which powder or gas flows between the reactor 100 and the auxiliary mesh structure 300 to prevent leakage of powder or gas.
  • the lower mesh structure 400 may be coupled to a lower portion of the reactor 100 .
  • the lower mesh structure 400 may include a disk-shaped structure coupled to the lower portion of the reactor 100 and a second mesh network coupled to the upper portion of the structure.
  • the lower mesh structure 400 may be a circular second mesh network through which a central portion passes.
  • the lower mesh structure 400 may be a second mesh network inserted above the shower head 500 .
  • the second mesh network may be used by adjusting the aperture ratio in various ways according to the particle size of the powder to be used.
  • the second mesh network may use a mesh having an aperture ratio different from that of the first mesh network 320 .
  • the material of the second mesh network may be coated with a material that does not easily react, such as AlOx or SiOx, to a stainless steel material according to the characteristics of the source gas used. Accordingly, an anti-deposition film may be formed through various materials and various coatings according to the type of the processing gas.
  • the lower mesh structure 400 may be formed below the auxiliary mesh structure 300 and spaced apart from the auxiliary mesh structure 300 by a predetermined distance.
  • the auxiliary mesh structure 300 is formed inside the reactor 100, and the lower mesh structure 400 is coupled to the upper part of the showerhead 500 under the reactor 100, and the auxiliary mesh structure 300 and A space may be formed between the lower mesh structure 400 .
  • a gas flow space (B) may be formed between the lower mesh structure 400 and the auxiliary mesh structure 300, and the gas flow space (B) is an inflow of raw material gas, purge gas, and reaction gas flowing from the lower part. can be done smoothly.
  • the shower head 500 is disposed below the lower mesh structure 400, and supplies at least one of a raw material gas, a purge gas, and a reaction gas from the bottom to the top to supply a gas flow space (B ) It may be coupled to the bottom of the reactor 100 to provide.
  • the shower head 500 may be installed under the reactor 100 so that the process gas supplied through the gas supply line can be evenly distributed, and the shower head 500 includes a plurality of nozzles or injection holes. can do. At this time, the processing gas supplied through the gas supply line passes through the shower head 500, and as the processing gas passing through the shower head 500 rises, an atomic layer may be deposited on the surface of the powder particles.
  • the gas supply line may be a pipe or tube line such as a gas supply pipe that is connected to the shower head 500 and forms a gas supply passage through which the processing gas can be sequentially supplied to the powder accommodated in the powder accommodating space (A).
  • the processing gas may include a raw material gas, a purge gas, and a reaction gas.
  • atomic layers can be deposited on powder particles in a time-division manner while basically repeating sequential gas supply cycles such as raw material gas, purge gas, reaction gas, and purge gas using the shower head 500 and the gas supply line. .
  • a support bearing 700 may be formed between the driving shaft 210 and the showerhead 500 so that the driving shaft 210 can rotate while being supported by the showerhead 500 .
  • the support bearing 700 may be formed as a radial bearing, the outer ring coupled to the lower portion of the auxiliary mesh structure 300, and the inner ring coupled to the connection portion 510 connected to the center of the showerhead 500.
  • the support bearing 700 may be coupled to the bearing accommodating part formed below the fixing part 330 .
  • the outer ring of the support bearing 700 may not contact the showerhead 500, but the inner ring may contact the showerhead 500. Therefore, the showerhead 500 coupled to the inner ring of the support bearing 700 through the connecting portion 510 is fixed, and the auxiliary mesh structure 300 coupled to the outer ring of the support bearing 700 through the fixing portion 330 And the stirring device 200 can be rotated.
  • the support bearing 700 may be formed as a thrust bearing.
  • the connecting portion 510 is a cylindrical connecting shaft coupled to the support bearing 700 .
  • the outer surface of the connecting portion 510 is formed with a step, and the support bearing 700 may be coupled to a bearing coupling region formed in the middle portion. At this time, the support bearing 700 may be inserted in one direction of the connection part 510 by a step of the connection part 510 and blocked in the other direction.
  • connection part 510 may be coupled to the center of the shower head 500 and fixed to the shower head 500 . Therefore, the shower head 500 and the lower mesh structure 400 coupled to the shower head 500 are fixed, and the auxiliary mesh structure 300 can rotate.
  • the atomic layer deposition apparatus for powder of the present invention may include an upper mesh structure 600 .
  • the upper mesh structure 600 is formed to cover the top of the reactor 100, the gas supplied into the reactor 100 is exhausted to the outside and the powder loaded inside the reactor 100 is prevented from leaking to the outside.
  • a mesh may be formed.
  • the upper mesh structure 600 may be coupled to an upper portion of the reactor 100 by forming a cover portion 630 capable of covering the reactor 100 .
  • the upper mesh structure 600 may be connected to an exhaust unit that exhausts the processing gas after the powder accommodated in the powder accommodating space A is processed through the processing gas.
  • the upper mesh structure 600 may include a second mesh network 620 to prevent the powder from scattering to the outside of the reactor 100 .
  • the second mesh network 620 may include fine holes. Accordingly, the processed gas or unreacted gas may be exhausted to the outside through the second mesh network 620 .
  • the size of the microholes may be larger than particles included in the supplied gas and may be smaller than powders filled in the reactor 100 . Accordingly, it is possible to prevent loss of powder caused by nano-sized or micro-sized powder floating in the powder accommodating space A when pumping or processing gas or unreacted gas is discharged.
  • the upper mesh structure 600 may be formed such that a drive unit formed outside the reactor 100 and a drive shaft unit 210 formed inside the reactor 100 are connected in a central region.
  • the driving unit may be a motor capable of rotating the driving shaft unit 210, and the driving unit transmits rotational force from the top of the upper mesh structure 600 through the center of the upper mesh structure 600 to the upper mesh structure 600. ) It is possible to rotate the drive shaft portion 210 by passing it to the drive shaft portion 210 coupled to the lower portion.
  • the upper mesh structure 600 may include a powder injection unit 610 .
  • the powder injection unit 610 may be formed as a valve communicating the inside and outside of the reactor 100 so as to supply the powder to the inside of the reactor 100 .
  • the atomic layer deposition apparatus for powder according to the present invention may include a powder inflow prevention unit 800 .
  • the powder inflow prevention unit 800 is coupled to the lower portion of the upper mesh structure 600 to prevent powder from entering between the driving shaft unit 210 and the upper mesh structure 600, and is formed to surround the upper region of the driving shaft unit 210. It can be.
  • the powder inflow prevention unit 800 may include a protection unit 810 , an upper sealed bearing 820 , a lower sealed bearing 830 and a feed through 840 .
  • the protection unit 810 is formed in a cylindrical shape and may be coupled to a lower portion of the center of the upper mesh structure 600 .
  • the driving shaft portion 210 to which the upper sealed bearing 820 and the lower sealed bearing 830 are coupled may be inserted into the protection unit 810 . Therefore, the protection unit 810 coupled to the upper mesh structure 600 is fixed, and the drive shaft unit 210 coupled to the protection unit 810, the upper sealed bearing 820, and the lower sealed bearing 830 rotates. can be driven
  • a feed through 840 may be coupled to a lower portion of the protection unit 810 .
  • the driving shaft 210 can be rotated through the upper sealed bearing 820 and the lower sealed bearing 830, and the powder is prevented from leaking into the powder inflow prevention unit 800. And, accordingly, it is possible to prevent the powder from leaking out of the reactor 100 along the driving shaft portion 210.
  • the atomic layer deposition apparatus for powder is formed so that the lower mesh unit and the stirring device can be driven simultaneously to prevent compaction of the powder located in the lower part of the reactor.
  • the powder coating process can be performed while maintaining high uniformity by solving the inflow problem of gases.
  • the present invention facilitates the powder process, which was previously difficult to mix and process due to agglomeration, so that it can be applied to CVD or powder mixing processes as well as ALD such as this facility.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Un appareil de dépôt de couche atomique pour poudres selon la présente invention peut comprendre : un réacteur cylindrique comportant un espace de réception de poudres dans lequel des poudres peuvent être reçues ; un dispositif d'agitation comprenant une partie arbre d'entraînement formée de façon à pouvoir tourner par rapport à l'axe central du réacteur, et une partie d'agitation formée sur la partie arbre d'entraînement pour agiter les poudres ; une structure maillée inférieure accouplée à une partie inférieure du réacteur de façon à empêcher une fuite externe des poudres ; une structure maillée auxiliaire formée au-dessus de la structure maillée inférieure de manière à être espacée de la structure maillée inférieure d'une distance prédéterminée pour former un espace d'écoulement de gaz, et accouplée à une partie inférieure de la partie arbre d'entraînement afin d'empêcher le compactage des poudres et de tourner en fonction de la rotation de la partie arbre d'entraînement ; et un diffuseur en pomme de douche disposé au-dessous de la structure maillée inférieure et relié à la partie inférieure du réacteur de façon à fournir au moins l'un parmi une matière première gazeuse, un gaz de purge et un gaz de réaction du côté inférieur au côté supérieur pour fournir le ou les gaz dans l'espace d'écoulement de gaz.
PCT/KR2021/018982 2021-08-27 2021-12-14 Appareil de dépôt de couche atomique pour poudres WO2023027262A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210114060A KR20230031618A (ko) 2021-08-27 2021-08-27 파우더용 원자층 증착 장치
KR10-2021-0114060 2021-08-27

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WO2023027262A1 true WO2023027262A1 (fr) 2023-03-02

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150013296A (ko) * 2012-05-14 2015-02-04 피코순 오와이 원자층 증착 카트리지를 이용하는 분말 입자 코팅
KR101868703B1 (ko) * 2016-12-14 2018-06-18 서울과학기술대학교 산학협력단 분말 코팅 반응기
US20200024736A1 (en) * 2018-07-19 2020-01-23 Kaushal Gangakhedkar Particle Coating Methods and Apparatus
KR20200039136A (ko) * 2018-10-05 2020-04-16 (주)아이작리서치 파우더용 원자층 증착 장치
KR20210007033A (ko) * 2018-06-12 2021-01-19 어플라이드 머티어리얼스, 인코포레이티드 박막들로의 균일한 입자 코팅을 위한 회전식 반응기

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150013296A (ko) * 2012-05-14 2015-02-04 피코순 오와이 원자층 증착 카트리지를 이용하는 분말 입자 코팅
KR101868703B1 (ko) * 2016-12-14 2018-06-18 서울과학기술대학교 산학협력단 분말 코팅 반응기
KR20210007033A (ko) * 2018-06-12 2021-01-19 어플라이드 머티어리얼스, 인코포레이티드 박막들로의 균일한 입자 코팅을 위한 회전식 반응기
US20200024736A1 (en) * 2018-07-19 2020-01-23 Kaushal Gangakhedkar Particle Coating Methods and Apparatus
KR20200039136A (ko) * 2018-10-05 2020-04-16 (주)아이작리서치 파우더용 원자층 증착 장치

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