WO2023025937A3 - Verfahren zur herstellung mindestens eines laserchips und laserchip - Google Patents

Verfahren zur herstellung mindestens eines laserchips und laserchip Download PDF

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Publication number
WO2023025937A3
WO2023025937A3 PCT/EP2022/073777 EP2022073777W WO2023025937A3 WO 2023025937 A3 WO2023025937 A3 WO 2023025937A3 EP 2022073777 W EP2022073777 W EP 2022073777W WO 2023025937 A3 WO2023025937 A3 WO 2023025937A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser chip
substrate
active zone
semiconductor layer
producing
Prior art date
Application number
PCT/EP2022/073777
Other languages
English (en)
French (fr)
Other versions
WO2023025937A2 (de
Inventor
Alfred Lell
Sven GERHARD
Christoph Eichler
Original Assignee
Ams-Osram International Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Priority to DE112022003320.7T priority Critical patent/DE112022003320A5/de
Publication of WO2023025937A2 publication Critical patent/WO2023025937A2/de
Publication of WO2023025937A3 publication Critical patent/WO2023025937A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Es wird ein Verfahren zur Herstellung mindestens eines Laserchips (20) angegeben, das Verfahren umfassend die Schritte Aufwachsen einer Halbleiterschichtenfolge (21) mit einer aktiven Zone (22) auf einem Substrat (23), Abtragen eines Teils des Substrats (23), eines Teils der aktiven Zone (22) und eines Teils der Halbleiterschichtenfolge (21) durch trockenchemisches Ätzen, so dass mindestens eine Seitenkante (24) gebildet wird, welche sich zumindest stellenweise quer oder senkrecht zur Haupterstreckungsebene des Substrats (23) erstreckt, und Abtragen eines Teils des Substrats (23), eines Teils der aktiven Zone (22) und eines Teils der Halbleiterschichtenfolge (21) an der Seitenkante (24) durch nasschemisches Ätzen, wobei die aktive Zone (22) dazu ausgelegt ist Laserstrahlung zu emittieren. Außerdem wird ein Laserchip (20) angegeben.
PCT/EP2022/073777 2021-08-26 2022-08-26 Verfahren zur herstellung mindestens eines laserchips und laserchip WO2023025937A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112022003320.7T DE112022003320A5 (de) 2021-08-26 2022-08-26 Verfahren zur Herstellung mindestens eines Laserchips und Laserchip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021122145.5A DE102021122145A1 (de) 2021-08-26 2021-08-26 Verfahren zur Herstellung mindestens eines Laserchips und Laserchip
DE102021122145.5 2021-08-26

Publications (2)

Publication Number Publication Date
WO2023025937A2 WO2023025937A2 (de) 2023-03-02
WO2023025937A3 true WO2023025937A3 (de) 2023-04-20

Family

ID=83508980

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2022/073777 WO2023025937A2 (de) 2021-08-26 2022-08-26 Verfahren zur herstellung mindestens eines laserchips und laserchip

Country Status (2)

Country Link
DE (2) DE102021122145A1 (de)
WO (1) WO2023025937A2 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110243169A1 (en) * 2008-11-21 2011-10-06 Osram Opto Semiconductors Gmbh Edge Emitting Semiconductor Laser Chip
US20140080287A1 (en) * 2011-03-31 2014-03-20 Osram Opto Semiconductors Gmbh Method for singulating a component composite assembly
US20190348568A1 (en) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Device and Method of Manufacturing an Optoelectronic Semiconductor Device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1041585A (ja) 1996-07-17 1998-02-13 Toyoda Gosei Co Ltd ３族窒化物半導体レーザダイオードの製造方法
JP2011228570A (ja) 2010-04-22 2011-11-10 Renesas Electronics Corp 半導体レーザ及びその製造方法
DE102012106943B4 (de) 2012-07-30 2019-06-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiode
US9184563B1 (en) 2012-08-30 2015-11-10 Soraa Laser Diode, Inc. Laser diodes with an etched facet and surface treatment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110243169A1 (en) * 2008-11-21 2011-10-06 Osram Opto Semiconductors Gmbh Edge Emitting Semiconductor Laser Chip
US20140080287A1 (en) * 2011-03-31 2014-03-20 Osram Opto Semiconductors Gmbh Method for singulating a component composite assembly
US20190348568A1 (en) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Device and Method of Manufacturing an Optoelectronic Semiconductor Device

Also Published As

Publication number Publication date
DE112022003320A5 (de) 2024-04-11
WO2023025937A2 (de) 2023-03-02
DE102021122145A1 (de) 2023-03-02

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