WO2023019662A1 - 一种高绝缘电压igbt模块 - Google Patents

一种高绝缘电压igbt模块 Download PDF

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WO2023019662A1
WO2023019662A1 PCT/CN2021/117564 CN2021117564W WO2023019662A1 WO 2023019662 A1 WO2023019662 A1 WO 2023019662A1 CN 2021117564 W CN2021117564 W CN 2021117564W WO 2023019662 A1 WO2023019662 A1 WO 2023019662A1
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igbt module
ceramic substrate
dbc ceramic
dbc
high insulation
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PCT/CN2021/117564
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English (en)
French (fr)
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陶崇勃
邢毅
李国锋
于凯
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西安中车永电电气有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the invention belongs to the technical field of power modules and relates to a high insulation voltage IGBT module.
  • the IGBT module is a voltage-controlled device, which has the advantages of large input impedance, small driving power, simple control circuit, small switching loss, fast on-off speed, high operating frequency, and large component capacity.
  • IGBT modules are very suitable for use in inverter systems such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields.
  • the IGBT module is connected by two or more power semiconductor chips according to a certain circuit structure, and is packaged together with the auxiliary circuit in an insulating shell.
  • the main electrode and auxiliary electrode of the IGBT are connected to the DBC ceramic substrate, and then lead out to the module.
  • the DBC ceramic substrate is then welded to the bottom plate.
  • the module is filled with insulating materials, and the DBC ceramic substrate is responsible for the insulation between the module electrodes and the bottom plate.
  • the high-voltage source must provide the required insulation test voltage U isol , gradually increase the test voltage to the specified value, which can be determined by the following formula and maintain the specified time t, and then drop the voltage to 0V.
  • the insulation voltage between the main electrode and the bottom plate of the current IGBT module is mainly borne by a layer of DBC ceramic substrate (the ceramic material is Al 2 O 3 , AlN, Si 3 N 4 , etc.), and its structure is shown in Figure 1. Sealed with silicone gel insulation material to achieve the rated insulation voltage.
  • the IGBT module uses a layer of DBC ceramic substrate inside. When the thickness of the DBC ceramic substrate is determined, the insulation strength of the ceramic substrate is constant, and the insulation voltage of the IGBT module is determined.
  • the insulation failure of the module will occur to the ground, which will damage the module and the equipment using the module. Therefore, in order to increase the insulation voltage, only the thickness of the DBC ceramic layer can be increased, but the increase in the thickness of the DBC ceramic layer will greatly increase the stress of the ceramic layer during the use of the IGBT module, which will affect the life and reliability of the IGBT module.
  • IGBT module structure is proposed in the prior art.
  • a ceramic substrate is added under the module bottom plate to increase the insulation voltage
  • thermal conductive silicone grease is filled between the ceramic substrate and the bottom plate, as shown in Figure 2 Show. While this structure increases the insulation voltage, due to the addition of a layer of thermal conductive silicone grease, the thermal resistance of the entire IGBT module will be greatly increased, which will affect the performance of the module.
  • the ceramic substrate is outside the module, it is easy to be damaged without the protection of insulating materials. Damage, thereby destroying the insulation capacity of the equipment.
  • the purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, and provide a high insulation voltage IGBT module to meet the requirements of users for different insulation voltages.
  • the present invention provides the following technical solutions:
  • This high insulation voltage IGBT module includes: a plurality of power semiconductor chips and a plurality of DBC ceramic substrates located in an insulating casing, and a plurality of the power semiconductor chips and auxiliary circuits are packaged in the insulating casing; the IGBT module The electrodes are connected to the DBC ceramic substrate and exposed on the upper surface of the insulating shell; multiple DBC ceramic substrates are stacked and welded, and the bottom DBC ceramic substrate is welded to the bottom plate; the IGBT module is filled with insulating materials.
  • the insulating material includes at least one of silicone gel and epoxy resin.
  • the height of the epoxy resin layer formed by potting the epoxy resin is the same as the height of the plurality of DBC ceramic substrates stacked and welded.
  • silicone gel is located above the epoxy resin layer.
  • the material of the DBC ceramic substrate is selected from any one of Al 2 O 3 , AlN, and Si 3 N 4 .
  • the number of the DBC ceramic substrates is two, the first DBC ceramic substrate is a double-sided copper-clad ceramic substrate, and the second DBC ceramic substrate is a double-sided copper-clad ceramic substrate for welding chips.
  • the insulation voltage of the IGBT module formed after the two DBC ceramic substrates (4) are laminated and welded is 40kV.
  • the insulating shell is sealed and connected to the bottom plate.
  • the technical solution provided by the present invention includes the following beneficial effects: the high insulation voltage IGBT module adopts multiple DBC ceramic substrates to be stacked and welded, and is combined with high insulation potting materials such as potting epoxy resin to realize IGBT The high insulation characteristics of the module without significantly increasing the thermal resistance of the module.
  • Figure 1 is a general structural diagram of an existing IGBT module
  • Figure 2 is a structural diagram of adding a ceramic substrate to the existing IGBT module
  • Fig. 3 is the structural diagram of two-layer DBC ceramic substrate welding and potting epoxy resin+silicone gel provided by the present invention
  • Fig. 4 is the structural diagram of two-layer DBC ceramic substrate welding and potting silicone gel provided by the present invention.
  • Fig. 5 is a structural diagram of the first DBC ceramic substrate provided by the present invention.
  • Fig. 6 is the structural diagram of the second DBC ceramic substrate provided by the present invention.
  • FIG. 7 is a position distribution diagram of the components of the IGBT module provided by Embodiment 2 of the present invention.
  • Fig. 8 is a temperature curve diagram of one cycle of the preset welding program of the welding furnace in the 0-t6 time period in Example 2 of the present invention.
  • Electrode 1. Electrode; 2. Shell; 3. Power semiconductor chip; 4. DBC ceramic substrate; 5. Base plate; 6. Silicon gel; 7. Epoxy resin layer; 8. The first DBC ceramic substrate; 9. The first Two DBC ceramic substrates; 10, copper layer; 11, solder
  • the present invention provides a high insulation voltage IGBT module, comprising: a plurality of power semiconductor chips 3 and a plurality of DBC ceramic substrates 4 located in an insulating casing 2, and a plurality of power semiconductor chips 3 according to a certain
  • the circuit structure is connected together, and a plurality of the power semiconductor chips 3 and the auxiliary circuit are packaged in the insulating casing 2;
  • the electrodes 1 of the IGBT module are connected to the DBC ceramic substrate 4, and are exposed on the upper surface of the insulating casing 2;
  • a plurality of the DBC ceramic substrates 4 are stacked and welded, and the bottom DBC ceramic substrate 4 is welded to the bottom plate 5; the IGBT module is filled with insulating materials.
  • the insulating material is silicone gel 6 .
  • the material of the DBC ceramic substrate 4 is selected from any material used for packaging the DBC ceramic substrate 4 such as Al 2 O 3 , AlN, Si 3 N 4 .
  • the number of the DBC ceramic substrates 4 is two, both sides of the first DBC ceramic substrate 8 are plated with a copper layer 10, and the second DBC ceramic substrate 9 is soldered with three power semiconductors.
  • the double-sided copper-clad ceramic substrate of the chip 3, the thickness of the DBC ceramic substrate 4 can be any thickness such as 0.38mm, 0.63mm, 1mm, etc.
  • the insulation voltage of the IGBT module formed after the two DBC ceramic substrates 4 are laminated and welded is 40kV.
  • the insulating casing 2 is sealed and connected with the bottom plate 5 .
  • Example 1 On the basis of Example 1, the difference from Example 1 is that the insulating material in this example uses silicone gel 6 and epoxy resin, as shown in Figure 4, the epoxy resin formed by potting epoxy resin The height of the resin layer 7 is the same as that of the two DBC ceramic substrates 4 stacked and welded, and the silicone gel 6 is located above the epoxy resin layer 7 .
  • the IGBT module In this embodiment, two layers of 1mm AlN material DBC ceramic substrate 4 are used for soldering and then potted with epoxy resin and silicone gel 6 for insulation testing.
  • the IGBT module The insulation voltage can be increased from 20kV to 40kV.
  • the insulation voltage of the entire IGBT module can be doubled only by adding a layer of DBC ceramic substrate 4 made of 1mmAlN material, and overcomes the stress of the ceramic layer in the use of the IGBT module due to the increase in the thickness of the 4 layers of the DBC ceramic substrate. Improve, and then affect the life and reliability of the IGBT module.
  • the high insulation voltage IGBT module provided in this embodiment adopts the process of vacuum reflow soldering.
  • the bottom plate 5, the first DBC ceramic substrate 8, the second DBC ceramic substrate 9, electrodes, solder and other components are assembled and positioned using fixtures, see Fig. 7.
  • the soldering assembly uses a soldering furnace in a vacuum or reducing gas environment, and after a specific soldering procedure, the solder 11 goes through a process of heating ⁇ melting ⁇ maintaining ⁇ cooling ⁇ solidification; wherein, the solder temperature rises at a specific heating rate (5°C/min) After the solder melts, keep the solder for a certain period of time to fully melt and infiltrate the soldering surface. The time is about 30s.
  • the temperature drops at a specific cooling rate (5°C/min).
  • a specific cooling rate 5°C/min.
  • the solder solidifies and forms a soldering surface. Alloy, at this time, the bottom plate 5, the first DBC ceramic substrate 8, the second DBC ceramic substrate 9, and the electrode 1 are welded together to realize the welding of the bottom plate 5, the DBC ceramic substrate 4, and the electrode 1. All solder layers are scanned for void rate, the total void rate is controlled at ⁇ 5%, the maximum void rate is ⁇ 2%, and the solder cannot overflow the edge of the DBC.
  • the vacuum welding furnace realizes the welding of the bottom plate 5, the DBC ceramic substrate 4, and the electrode 1 by using a preset welding program.
  • T1 room temperature
  • T2 is the temperature at which the preset welding program of the welding furnace runs through one cycle
  • T3 is the melting point of the solder
  • T4 is the temperature of the welding temperature. highest value.
  • the temperature curve corresponding to the time period 0-t6 is the temperature curve after the welding program preset by the welding furnace has run a cycle, and after the time t6 is the temperature curve of the product (solder) at room temperature, as follows:
  • the time period 0-t1 is the preparatory stage of the preset welding procedure, and the solder is at room temperature;
  • the time period t1-t3 is the heating stage, and the temperature starts to rise at a certain speed at time t1, and the temperature rises to the melting point of the solder at time t2, and the solder changes from solid to It becomes a liquid state, and reaches the set maximum temperature at time t3;
  • the time period t3-t4 is the holding stage to ensure that the solder can be completely melted, so that the solder is in a liquid state;
  • the time period t4-t6 is the cooling stage, at a certain The rate begins to cool down, and the temperature drops to the melting point of the solder at t5, and the solder changes from liquid to solid.
  • the DBC ceramic substrate 4 and the electrode 1 are welded through the solder sheet, and the welding furnace cooling program is completed at t6.
  • the time period of t6-t7 is the product ( Solder) is naturally cooled at room temperature, and the product (solder) reaches room temperature at t7.
  • the welded components are assembled in the shell to form a semi-sealed space, which provides filling space for silicone gel 6 and epoxy resin potting.
  • Silicone gel 6 and epoxy resin are perfused under vacuum conditions, and at the same time, they are kept in a vacuum environment for a period of time (usually 10 minutes) to extract the gas in the gel, so as to ensure the insulating properties of the module.
  • the silicon gel 6 and the epoxy resin are kept in a high temperature environment of 100° C.-150° C. for 4 to 6 hours, and a complete IGBT module structure is finally formed after the curing is completed, as shown in FIG. 4 .
  • the present invention can flexibly adopt the welding method of multi-layer DBC ceramic substrate 4 according to the user's requirements for different insulation voltages, and combine high-insulation potting materials such as potting epoxy resin to achieve high insulation of IGBT modules characteristic.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明属于功率模块技术领域，涉及一种高绝缘电压IGBT模块，包括：位于绝缘外壳内的多个功率半导体芯片及多个DBC陶瓷基板，多个所述功率半导体芯片与辅助电路均封装于所述绝缘外壳内；所述IGBT模块的电极与DBC陶瓷基板连接，并裸露于绝缘外壳的上表面；多个所述DBC陶瓷基板叠层焊接，且底层的DBC陶瓷基板与底板焊接；所述IGBT模块内灌封绝缘材料。这种高绝缘电压IGBT模块，采用多个DBC陶瓷基板叠层焊接，结合灌封环氧树脂等高绝缘灌封材料实现IGBT模块的高绝缘特性，同时不会明显增加模块热阻。

Description

一种高绝缘电压IGBT模块 技术领域
本发明属于功率模块技术领域，涉及一种高绝缘电压IGBT模块。
背景技术
IGBT模块是电压控制型器件，其具有输入阻抗大，驱动功率小，控制电路简单，开关损耗小，通断速度快，工作频率高，元件容量大等优点。作为电力电子领域典型的开关器件，IGBT模块非常适合应用于变流系统如交流电机、变频器、开关电源、照明电路、牵引传动等领域。
IGBT模块由两个或两个以上的功率半导体芯片按一定的电路结构连接起来，并与辅助电路共同封装于绝缘的外壳内。IGBT的主电极、辅助电极连接在DBC陶瓷基板上，然后引出模块，DBC陶瓷基板再与底板焊接，模块内灌封绝缘材料，DBC陶瓷基板承担模块电极与底板之间的绝缘。在评定IGBT模块的绝缘电压值时，将所有主电极和辅助电极连接到一起，接至高压源端，底板连接至测试仪器低压端。高压源必须提供需要的绝缘测试电压U isol，将测试电压逐渐提升至规定值，该值可由下式确定并保持规定的时间t，再将电压降为0V。
Figure PCTCN2021117564-appb-000001
随着使用IGBT模块的装备对绝缘电压的要求越来越高，因此IGBT模块绝缘电压的要求也不断提升。目前的IGBT模块主电极与底板之间的绝缘电压主要依靠一层DBC陶瓷基板承担(陶瓷材料为Al 2O 3、AlN、Si 3N 4等)，其结构如图1所示，模块内灌封硅凝胶绝缘材料，达到额定 的绝缘电压。该IGBT模块，其内部使用一层DBC陶瓷基板，当DBC陶瓷基板厚度确定后，陶瓷基板的绝缘强度一定，那么IGBT模块的绝缘电压就确定。当外部电压超过IGBT模块的绝缘电压后，模块会发生对地绝缘失效，损坏模块和使用该模块的设备。因此，为提高绝缘电压只能增加DBC陶瓷层的厚度，但DBC陶瓷层厚度的增加会大幅提高IGBT模块使用中陶瓷层的应力，影响IGBT模块的寿命和可靠性。
针对上述问题，现有技术中提出了另一种IGBT模块结构，在使用过程中，在模块底板下增加一个陶瓷基板以增加绝缘电压，陶瓷基板与底板之间填充导热硅脂，如图2所示。而这种结构在增加绝缘电压的同时，由于增加了一层导热硅脂，整个IGBT模块使用的热阻会大幅提高，影响模块性能，同时由于陶瓷基板在模块外部，没有绝缘材料的保护容易受损伤，从而破坏设备的绝缘能力。
发明内容
本发明的目的在于克服上述现有技术的缺点，提供一种高绝缘电压IGBT模块，以满足用户对不同绝缘电压的要求。
为实现上述目的，本发明提供了如下技术方案：
这种高绝缘电压IGBT模块，包括：位于绝缘外壳内的多个功率半导体芯片及多个DBC陶瓷基板，多个所述功率半导体芯片与辅助电路均封装于所述绝缘外壳内；所述IGBT模块的电极与DBC陶瓷基板连接，并裸露于绝缘外壳的上表面；多个所述DBC陶瓷基板叠层焊接，且底层的DBC陶瓷基板与底板焊接；所述IGBT模块内灌封绝缘材料。
进一步，所述绝缘材料包括硅凝胶、环氧树脂中的至少一种。
进一步，灌封环氧树脂形成的环氧树脂层的高度与多个DBC陶瓷基板叠层焊接后的高度相同。
进一步，所述硅凝胶位于环氧树脂层的上方。
进一步，所述DBC陶瓷基板的材料选自Al 2O 3、AlN、Si 3N 4中的任一种。
进一步，所述DBC陶瓷基板的数量为两个，第一DBC陶瓷基板为双面覆铜陶瓷基板，第二DBC陶瓷基板为焊接芯片的双面覆铜陶瓷基板。
进一步，两个所述DBC陶瓷基板(4)叠层焊接后形成的IGBT模块的绝缘电压为40kV。
进一步，所述绝缘外壳与底板密封连接。
与现有技术相比，本发明提供的技术方案包括以下有益效果：这种高绝缘电压IGBT模块，采用多个DBC陶瓷基板叠层焊接，结合灌封环氧树脂等高绝缘灌封材料实现IGBT模块的高绝缘特性，同时不会明显增加模块热阻。
附图说明
图1为现有IGBT模块的通用结构图；
图2为现有IGBT模块增加陶瓷基板的结构图；
图3为本发明提供的两层DBC陶瓷基板焊接且灌封环氧树脂+硅凝胶的结构图；
图4为本发明提供的两层DBC陶瓷基板焊接且灌封硅凝胶的结构图；
图5为本发明提供的第一DBC陶瓷基板的结构图；
图6为本发明提供的第二DBC陶瓷基板的结构图；
图7为本发明实施例2提供的IGBT模块各部件的位置分布图；
图8为本发明实施例2中0-t6时间段焊接炉预设的焊接程序运行完一个周期的温度曲线图。
其中：1、电极；2、外壳；3、功率半导体芯片；4、DBC陶瓷基板；5、底板；6、硅凝胶；7、环氧树脂层；8、第一DBC陶瓷基板；9、第二DBC陶瓷基板；10、铜层；11、焊料
具体实施方式
下面结合附图及实施例对本发明做进一步详细描述：
实施例1
参见图3所示，本发明提供了一种高绝缘电压IGBT模块，包括：位于绝缘外壳2内的多个功率半导体芯片3及多个DBC陶瓷基板4，多个所述功率半导体芯片3按一定的电路结构连接起来，且多个所述功率半导体芯片3与辅助电路均封装于绝缘外壳2内；所述IGBT模块的电极1与DBC陶瓷基板4连接，并裸露于绝缘外壳2的上表面；多个所述DBC陶瓷基板4叠层焊接，且底层的DBC陶瓷基板4与底板5焊接；所述IGBT模块内灌封绝缘材料。
进一步，所述绝缘材料为硅凝胶6。
进一步，所述DBC陶瓷基板4的材料选自Al 2O 3、AlN、Si 3N 4等用于封装DBC陶瓷基板4的任一种材料。
进一步，结合图5-6所示，所述DBC陶瓷基板4的数量为两个，第 一DBC陶瓷基板8的双面均镀覆铜层10，第二DBC陶瓷基板9为焊接有三个功率半导体芯片3的双面覆铜陶瓷基板，DBC陶瓷基板4的厚度可以为0.38mm、0.63mm、1mm等任意厚度。
进一步，两个所述DBC陶瓷基板4叠层焊接后形成的IGBT模块的绝缘电压为40kV。
进一步，所述绝缘外壳2与底板5密封连接。
实施例2
在实施例1的基础上，与实施例1的不同之处在于，本实施例中的绝缘材料采用硅凝胶6和环氧树脂，参见图4所示，灌封环氧树脂形成的环氧树脂层7的高度与两个DBC陶瓷基板4叠层焊接后的高度相同，且硅凝胶6位于环氧树脂层7的上方。
本实施例采用两层1mm AlN材质的DBC陶瓷基板4进行焊接后灌封环氧树脂和硅凝胶6进行绝缘测试，与采用一层AlN材质的DBC陶瓷基板4的IGBT模块相比，IGBT模块的绝缘电压由20kV可提高至40kV。本发明，仅通过增加1层1mmAlN材质的DBC陶瓷基板4，整个IGBT模块的绝缘电压即可增加1倍，克服了由于DBC陶瓷基板4层厚度的增加会而导致IGBT模块使用中陶瓷层应力的提高，进而影响IGBT模块的寿命和可靠性的问题。
本实施例提供的高绝缘电压IGBT模块，采用真空回流焊的工艺，底板5、第一DBC陶瓷基板8、第二DBC陶瓷基板9、电极、焊料等部件使用工装夹具完成组装和定位，参见图7所示。焊接组件使用焊接炉在真空或者还原气体环境中，经过特定的焊接程序，焊料11经过升温→ 融化→保持→降温→固化工艺；其中，焊料升温阶段以特定的升温速率(5℃/min)上升，焊料融化后保持一定时间让焊料充分融化并与焊接面浸润，时间大约为30s，降温阶段以特定的降温速率(5℃/min)下降，当温度小于焊料熔点后，焊料固化与焊接面形成合金，此时将底板5、第一DBC陶瓷基板8、第二DBC陶瓷基板9、电极1焊接起来，实现底板5、DBC陶瓷基板4、电极1的焊接。所有焊层进行空洞率扫描，总的空洞率控制在≤5％，最大空洞率≤2％，焊料不能溢出DBC边缘。
进一步，真空焊接炉利用预设的焊接程序实现底板5、DBC陶瓷基板4、电极1的焊接。具体地，炉内温度随时间的变化曲线参见图8所示，其中，T1为室温，T2为焊接炉预设的焊接程序运行完一个周期的温度，T3为焊料的熔点，T4为焊接温度的最高值。
由图8可知，0-t6时间段对应的温度曲线为焊接炉预设的焊接程序运行完一个周期的温度曲线，t6时刻以后为产品(焊料)在室温中的温度曲线，具体如下：
0-t1时间段是预设的焊接程序准备阶段，焊料为常温；t1-t3时间段为升温阶段，t1时刻以一定的速度开始升温，在t2时刻温度升高到焊料的熔点，焊料由固态变为液态，t3时刻达到设定的最高温度值；t3-t4时间段为保持阶段，以保证焊料能够完全融化，使焊料呈液态；t4-t6时间段为降温阶段，在t4时刻以一定的速率开始降温，在t5时刻温度降到焊料的熔点，焊料由液态变为固态，此刻DBC陶瓷基板4与电极1通过焊片焊接，t6时刻焊接炉降温程序完成；t6-t7时间段为产品(焊料)在室温中自然冷却的过程，在t7时刻产品(焊料)达到室温。
焊接完成的组件进行外壳装配形成半密封空间，为硅凝胶6和环氧树脂灌封提供填充空间。
硅凝胶6和环氧树脂在真空条件下进行灌注，同时在真空环境中保持一段时间(通常为10min)抽取胶体中的气体，保证模块的绝缘特性。
在高温环境100℃-150℃条件下保持4～6小时，对硅凝胶6和环氧树脂进行固化，固化完成后最终形成完整的IGBT模块结构，参见图4。
综上，本发明在IGBT模块制造中可以根据用户对不同绝缘电压的要求，灵活采用多层DBC陶瓷基板4焊接的方式，结合灌封环氧树脂等高绝缘灌封材料达到IGBT模块的高绝缘特性。
以上所述仅是本发明的具体实施方式，使本领域技术人员能够理解或实现本发明。对这些实施例的多种修改对本领域的技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。
应当理解的是，本发明并不局限于上述已经描述的内容，并且可以在不脱离其范围进行各种修改和改变。本发明的范围仅由所附的权利要求来限制。

Claims (8)

  1. 一种高绝缘电压IGBT模块，其特征在于，包括：位于绝缘外壳(2)内的多个功率半导体芯片(3)及多个DBC陶瓷基板(4)，多个所述功率半导体芯片(3)与辅助电路均封装于所述绝缘外壳(2)内；所述IGBT模块的电极(1)与DBC陶瓷基板(4)连接，并裸露于绝缘外壳(2)的上表面；多个所述DBC陶瓷基板(4)叠层焊接，且底层的DBC陶瓷基板(4)与底板(5)焊接；所述IGBT模块内灌封绝缘材料。
  2. 根据权利要求1所述的高绝缘电压IGBT模块，其特征在于，所述绝缘材料包括硅凝胶(6)、环氧树脂中的至少一种。
  3. 根据权利要求2所述的高绝缘电压IGBT模块，其特征在于，灌封环氧树脂形成的环氧树脂层(7)的高度与多个DBC陶瓷基板(4)叠层焊接后的高度相同。
  4. 根据权利要求3所述的高绝缘电压IGBT模块，其特征在于，所述硅凝胶(6)位于环氧树脂层(7)的上方。
  5. 根据权利要求1所述的高绝缘电压IGBT模块，其特征在于，所述DBC陶瓷基板(4)的材料选自Al 2O 3、AlN、Si 3N 4中的任一种。
  6. 根据权利要求1所述的高绝缘电压IGBT模块，其特征在于，所述DBC陶瓷基板(4)的数量为两个，第一DBC陶瓷基板(8)为双面覆铜陶瓷基板，第二DBC陶瓷基板(9)为焊接芯片的双面覆铜陶瓷基板。
  7. 根据权利要求6所述的高绝缘电压IGBT模块，其特征在于，两个所述DBC陶瓷基板(4)叠层焊接后形成的IGBT模块的绝缘电压为40kV。
  8. 根据权利要求1所述的高绝缘电压IGBT模块，其特征在于，所述绝缘外壳(2)与底板(5)密封连接。
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