WO2023019520A1 - Panneau d'affichage et son procédé de fabrication - Google Patents

Panneau d'affichage et son procédé de fabrication Download PDF

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Publication number
WO2023019520A1
WO2023019520A1 PCT/CN2021/113585 CN2021113585W WO2023019520A1 WO 2023019520 A1 WO2023019520 A1 WO 2023019520A1 CN 2021113585 W CN2021113585 W CN 2021113585W WO 2023019520 A1 WO2023019520 A1 WO 2023019520A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
driving circuit
substrate
emitting diode
Prior art date
Application number
PCT/CN2021/113585
Other languages
English (en)
Chinese (zh)
Inventor
王广
林建宏
张逵
王会苹
杨轩
Original Assignee
重庆康佳光电技术研究院有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 重庆康佳光电技术研究院有限公司 filed Critical 重庆康佳光电技术研究院有限公司
Priority to PCT/CN2021/113585 priority Critical patent/WO2023019520A1/fr
Publication of WO2023019520A1 publication Critical patent/WO2023019520A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Definitions

  • the present application relates to the field of display technology, in particular to a display panel and a manufacturing method thereof.
  • the LED chips need to go through process steps such as stripping, mass transfer, pairing, and bonding.
  • process steps such as stripping, mass transfer, pairing, and bonding.
  • the process of manufacturing Micro-LED display panels is relatively complicated.
  • the manufacturing process is lengthy, costly and has a relatively low yield.
  • the purpose of the present application is to provide a display panel and a manufacturing method thereof, aiming at solving the technical problem of lengthy manufacturing process of the display panel.
  • a method for manufacturing a display panel comprising the steps of:
  • a substrate is provided having opposing first and second surfaces.
  • a plurality of LED chips arranged in an array are formed on the first surface of the base.
  • a driving circuit layer is formed on the surface of the first planar layer away from the base, and the driving circuit layer is electrically connected to the plurality of LED chips.
  • a color conversion layer is formed on the light emitting side of at least some of the LED chips.
  • processes such as stripping, mass transfer, pairing and bonding of light-emitting diode chips in the traditional manufacturing process of display panels are omitted, as well as structures assisting the above-mentioned processes, effectively simplifying the structure of the display panel and A step of manufacturing a display panel, thereby reducing the manufacturing cost of the display panel.
  • forming the LED chip on the substrate includes the steps of:
  • An epitaxial layer is formed on the first surface of the substrate.
  • a first electrode and a second electrode are formed on the epitaxial layer.
  • Protective layers are respectively formed around the first electrode and the second electrode.
  • the fabrication process of the display panel is simplified.
  • a plurality of light-shielding holes are opened in the first planar layer;
  • the second material is filled in the light-shielding holes to form a light-shielding layer for isolating adjacent LED chips; or, the first material is filled on the first surface of the base to form a first layer covering the plurality of LED chips.
  • a light-isolation layer for isolating adjacent LED chips is formed on the first surface of the substrate.
  • the adjacent light-emitting diode chips are isolated by the light-isolation layer, so as to avoid cross-color between the light emitted by the light-emitting diode chips.
  • forming a driving circuit layer on the surface of the first planar layer away from the substrate comprising the steps of:
  • a driving circuit layer connected to the first electrode and the second electrode is formed on the surface of the first flat layer away from the base, and the driving circuit layer includes a light-transmitting area and a wiring area.
  • the light-transmitting area corresponds to the light-emitting area of the plurality of LED chips, so that the light emitted by the plurality of LED chips passes through the light-transmitting area.
  • the driving circuit layer is provided with a light-transmitting area, which can effectively improve the light transmittance of the driving circuit layer, and the driving circuit layer is provided with a wiring area, which can prevent strings from being generated when the light emitted by the LED chip enters the driving circuit layer. color.
  • the method also includes the steps of:
  • a second planar layer is provided on the surface of the driving circuit layer away from the base.
  • a plurality of light-transmitting grooves respectively corresponding to a plurality of light-emitting diode chips are opened in the second flat layer, and at least part of the light-transmitting grooves of the plurality of light-transmitting grooves accommodate the color conversion layer.
  • the color of the light emitted by the LED chip can be converted, and the light passing through the color conversion layer can also be homogenized.
  • the method also includes the steps of:
  • An encapsulation layer is provided on the surface away from the driving circuit layer in the second planar layer, and the plurality of color conversion layers are between the encapsulation layer and the driving circuit layer; it is difficult for water and oxygen to enter the light-passing groove, and water Oxygen affects the efficacy of light passing through the color conversion layer.
  • a plurality of light-transmitting grooves respectively corresponding to a plurality of light-emitting diode chips are opened on the base, and at least part of the light-transmitting grooves of the plurality of light-transmitting grooves accommodate the color conversion layer.
  • the epitaxial layer is grown on the substrate, and a light-transmitting groove for accommodating the color conversion layer is opened on the substrate, so that the epitaxial layer is directly in contact with the color conversion layer, so that the light emitting diode chip emits light through The transmittance of the color conversion layer is higher.
  • the method also includes the steps of:
  • An encapsulation layer covering the second surface of the substrate is provided, and the plurality of color conversion layers are respectively located between the encapsulation layer and the plurality of LED chips.
  • a glass substrate is provided on a surface remote from the base in the driving circuit layer.
  • the encapsulation layer and the plurality of light-emitting diode chips are sealed to seal the plurality of color conversion layers in the plurality of light-transmitting grooves, which can prevent water and oxygen from entering the light-transmitting grooves and affect the light passing through the color conversion.
  • the light effect of the layer; the glass substrate is used to protect the driving circuit layer and improve the strength of the display panel.
  • a display panel which includes:
  • a substrate includes opposing first and second surfaces.
  • a plurality of light emitting diode chips are arrayed and arranged on the first surface of the base.
  • the first flat layer is arranged on the first surface of the substrate and covers the plurality of LED chips, and the surface of the first flat layer far away from the substrate is provided with a device electrically connected to the plurality of LED chips. the driving circuit layer.
  • a plurality of color conversion layers, the plurality of color conversion layers correspond to at least some of the LED chips in the plurality of LED chips.
  • the display panel disclosed in the embodiment of the present application omits structures for assisting processes such as stripping, giant turning, pairing, and bonding of light-emitting diode chips, and the overall structure of the display panel is more compact and simple.
  • the light emitting diode chip includes an epitaxial layer, a first electrode, a second electrode and a protective layer;
  • the epitaxial layer is in contact with the first surface of the substrate.
  • the first electrode and the second electrode are connected to the epitaxial layer and the driving circuit layer.
  • the protection layer is arranged around the first electrode and the second electrode.
  • the first flat layer is provided with a plurality of light-shielding holes.
  • a light-shielding layer for isolating adjacent light-emitting diode chips is arranged in the light-shielding hole.
  • the adjacent light-emitting diode chips are isolated by the light-isolation layer, so as to avoid cross-color between the light emitted by the light-emitting diode chips.
  • the driving circuit layer includes a light transmission area and a wiring area.
  • the light-transmitting area corresponds to the light-emitting areas of the plurality of LED chips, so that the light emitted by the light-emitting areas of the plurality of LED chips passes through the light-transmitting area.
  • the driving circuit layer is provided with a light-transmitting area, which can effectively improve the light transmittance of the driving circuit layer, and the driving circuit layer is provided with a wiring area, which can prevent color crossover when the light emitted by the LED chip enters the driving circuit layer .
  • the driving circuit layer includes at least one of an array substrate row driving circuit, a light emitting driving circuit, a pixel control circuit, and a demultiplexer circuit.
  • the display panel further includes a second flat layer, the second flat layer is disposed on the surface of the driving circuit layer away from the substrate, and the second flat layer is provided with a plurality of light-through grooves, so The plurality of light-transmitting grooves respectively correspond to the plurality of light-emitting diode chips, and at least some of the plurality of light-transmitting grooves accommodate the color conversion layer.
  • the color of the light emitted by the LED chip can be converted, and the light passing through the color conversion layer can also be homogenized.
  • the display panel further includes an encapsulation layer.
  • the encapsulation layer is disposed on a surface of the second flat layer away from the driving circuit layer, and the plurality of color conversion layers are respectively located between the encapsulation layer and the driving circuit layer.
  • the encapsulation layer and the driving circuit layer respectively seal a plurality of color conversion layers in the plurality of light-transmitting grooves, which can prevent water and oxygen from entering the light-transmitting grooves and affect light passing through the color conversion layers. light effect.
  • processes such as stripping, mass transfer, pairing and bonding of light-emitting diode chips in the traditional manufacturing process of display panels are omitted, as well as structures assisting the above-mentioned processes, effectively simplifying the structure of the display panel and A step of manufacturing a display panel, thereby reducing the manufacturing cost of the display panel.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of another display panel provided by an embodiment of the present application.
  • FIG. 3 is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the present application.
  • 10-substrate 11-first surface; 12-second surface; 20-light-emitting diode chip; 21-epitaxy layer; 22a-first electrode; 22b-second electrode; 23-protective layer ; 30-first flat layer; 31-light isolation hole; 40-drive circuit layer; 41-light transmission area; 42-wiring area; 50-color conversion layer; 60-light isolation layer; 70-second flat layer; 80-encapsulation layer; 90-glass substrate.
  • FIG. 3 is a schematic flowchart of a method for manufacturing a display panel provided in an embodiment of the present application, and the method includes steps:
  • the substrate has a first surface 11 and a second surface 12 opposite to each other.
  • the material of the substrate corresponds to the light emitted by the LED chip 20 .
  • the substrate can be sapphire.
  • the light emitting diode chip 20 is directly fabricated on the substrate, and the light emitting diode chip 20 can emit light.
  • the surface of the first flat layer 30 away from the substrate is flat, and the first material can be OC (Optically Clear Adhesive), PI (polyimide amine (Polyimide, abbreviated as PI)) and other organic or inorganic materials;
  • the surface of the first flat layer 30 away from the substrate is flat, and the first material can be patterned by a yellow light process, and the first flat
  • the distance between the surface of the layer 30 far away from the substrate and the substrate is greater than the distance between the surface of the light emitting diode chip 20 far away from the substrate and the substrate.
  • the surface of the first flat layer 30 far away from the substrate is flat, which can facilitate the formation of the specific structure of the driving circuit layer 40, and the driving circuit layer 40 can specifically be a TFT
  • the driving circuit layer 40 thin film transistor driving circuit layer
  • the driving circuit layer 40 is used to control the light emitting diode chip 20 to emit light.
  • the light emitted by the light-emitting diode chip can enter the color conversion layer 50, and the color conversion layer 50 performs color conversion on the light entering the color conversion layer 50, and the color conversion layer 50 converts the light according to the The final color is classified.
  • the color conversion layer 50 may include a blue light color conversion layer, a red light color conversion layer, a green light color conversion layer, etc., and the blue light color conversion layer can The light is converted into blue light and emitted, and the red light color conversion layer can convert the light incident into the red light color conversion layer into red light, and the blue light color conversion layer can convert the incident green light into the color
  • the light of the layer is converted into filtered light and emitted; for example, the light emitted by the LED chip 20 is blue light, if the blue light enters the blue light color conversion layer, the light emitted from the blue light color conversion layer is blue light, and if the blue light enters the red light In the light color conversion layer, the light emitted from the red color conversion layer is red
  • the number of the color conversion layer 50 may be the same as the number of the light emitting diode chips 20, each color conversion layer 50 corresponds to one light emitting diode chip 20, and the light emitted by each light emitting diode chip 20 They are respectively converted by the corresponding color conversion layers 50.
  • the display panel needs to emit blue light, but the light emitted by each light emitting diode chip 20 is non-blue light, and each color conversion layer 50 can convert the light emitted by each light emitting diode chip 20 to The light is converted to blue light.
  • the number of the color conversion layer 50 may be less than the number of the light emitting diode chips 20, and some of the light emitting diode chips 20 in the plurality of light emitting diode chips 20 are respectively connected to the plurality of light emitting diode chips 20.
  • the number of color conversion layers 50 corresponds; for example, each color conversion layer 50 can convert the light emitted by the light emitting diode chip 20 into blue light, some of the light emitting diode chips 20 in the plurality of light emitting diode chips 20 can emit non-blue light, and the rest
  • the light-emitting diode chips 20 that can emit blue light can emit blue light, and the light-emitting diode chips 20 that can emit non-blue light correspond to the plurality of color conversion layers 50 respectively.
  • each color conversion layer 50 converts the non-blue light emitted by each LED chip 20 into blue light, and the other LED chips 20 emitting blue light do not need to pass through the color conversion layer 50 for conversion when emitting light.
  • the light-emitting diode chip 20 is formed on the substrate, eliminating the need for processes such as stripping, mass transfer, pairing and bonding of the light-emitting diode chip 20 in the traditional manufacturing process of the display panel, as well as structures that assist the above-mentioned processes.
  • the structure of the display panel and the steps of manufacturing the display panel are effectively simplified, thereby reducing the manufacturing cost of the display panel.
  • forming the LED chip 20 on the substrate includes the steps of:
  • An epitaxial layer 21 is formed on the first surface 11 of the substrate by chemical vapor deposition of a metal organic compound, and the epitaxial layer 21 serves as a light-emitting area of the light-emitting diode chip 20 .
  • the first electrode 22a and the second electrode 22b are formed by a yellow light process.
  • the protective layer 23 is formed around the first electrode 22a and the second electrode 22b respectively by yellow light process.
  • the material of the epitaxial layer 21 needs to correspond to the color of the light emitted by the LED chip 20.
  • chemical vapor deposition of metal organic compounds An epitaxial layer 21 corresponding to the color of the light emitted by the LED chip 20 is grown on the first surface 11 of the substrate.
  • Metal organic compound chemical vapor deposition is called MOCVD for short.
  • the epitaxial layer 21 is first formed on the substrate by chemical vapor deposition of metal organic compounds, and after the first electrode 22a and the second electrode 22b are formed on the epitaxial layer 21 through the yellow light process, the epitaxial layer 21 is formed by The yellow light process forms the protection layer 23 around the first electrode 22a and the second electrode 22b.
  • the steps include:
  • a plurality of light-shielding holes 31 are opened in the first planar layer 30 by yellow light process.
  • the second material is filled into the plurality of light-isolation holes 31 to form a light-isolation layer 60 for isolating adjacent LED chips 20 .
  • a plurality of light emitting diode chips 20 are formed on the first surface 11 of the substrate, and the plurality of light emitting diode chips 20 are arranged in an array on the substrate, and on the first surface 11 of the substrate
  • the first material first fills the gaps of the plurality of LED chips 20 arranged in an array, and gradually covers the plurality of LED chips.
  • a layer for isolating adjacent LED chips is formed on the first surface of the substrate. light barrier layer.
  • FIG. 1 is a schematic structural diagram of a display panel provided in an embodiment of the present application, the distance between the surface of the first flat layer 30 far away from the substrate and the substrate is greater than or equal to that of the light emitting diode chip 20. The distance between the surface of the substrate and the substrate.
  • the light-blocking layer 60 is used to isolate adjacent LED chips 20, specifically, the second material is a black organic material or inorganic material, so as to prevent the LED chips from 20 produces cross-colors between the emitted rays.
  • a driving circuit layer 40 on the surface of the first planar layer 30 away from the substrate by a yellow light process, and make the driving circuit layer 40 include a light-transmitting region 41 and a wiring region 42;
  • the light-transmitting area 41 correspond to the light-emitting areas of the plurality of LED chips 20 , so that the light emitted by the light-emitting areas of the plurality of LED chips 20 respectively passes through the light-transmitting area 41 .
  • the first flat layer 30 is made of a material that easily reacts with light, and the surface of the first flat layer far away from the substrate is photolithographically formed by a yellow light process to form a
  • the first electrode 22 a and the second electrode are electrically connected to the driving circuit layer 40 .
  • the light-transmitting region 41 in the driving circuit layer 40 is mainly made of indium tin oxide (English, Indium Tin Oxide (abbreviation, ITO) and other materials made of electrode leads, indium tin oxide has the characteristics of transparent conduction, when the light-emitting diode chip 20 is emitting light, the light emitted by the light-emitting area of the light-emitting diode chip 20 can pass through the The light transmission area 41, the driving circuit layer 40 is provided with a light transmission area 41, which can effectively improve the light transmittance of the driving circuit layer 40, in the embodiment of the present application, the driving circuit layer 40 is provided with a wiring area 42 , it can prevent cross-color generation when the light emitted by the light emitting diode chip 20 enters the driving circuit layer 40 .
  • ITO Indium Tin Oxide
  • the embodiment of the present application has two implementation modes.
  • the method for manufacturing a display panel further includes steps:
  • a second flat layer 70 is disposed on the surface of the driving circuit layer 40 away from the substrate.
  • a plurality of light-transmitting grooves a corresponding to the number of the light-emitting diode chips 20 are provided in the second flat layer 70, and at least some of the plurality of light-transmitting grooves a contain the plurality of color Transform layer.
  • a second flat layer 70 is firstly provided on the surface of the driving circuit layer 40 away from the substrate, and then light-through grooves are opened on the second flat layer 70 a, and then form a color conversion layer 50 in the light-passing groove a.
  • the material of the second flat layer 70 can specifically be organic or inorganic materials such as optically clear adhesive (English, Optically Clear Adhesive; OC for short), polyimide (English, Polyimide; PI for short),
  • optically clear adhesive English, Optically Clear Adhesive; OC for short
  • polyimide English, Polyimide; PI for short
  • the surface of the second flat layer 70 close to the driving circuit layer 40 is bonded to the driving circuit layer 40, the surface of the second flat layer 70 far away from the driving circuit layer 40 is arranged flat, and the first
  • the second flat layer 70 is provided with a plurality of light-transmitting grooves a, and the light-transmitting groove a runs through both end surfaces of the second flat layer 70;
  • the color conversion layer 50 is formed in the light-passing groove a by printing.
  • the color conversion layer 50 is formed in the light-transmitting groove a, which can convert the color of the light emitted by the LED chip 20 , and can also homogenize the light passing through the color conversion layer 50 .
  • the method of manufacturing the display panel also includes the steps of:
  • An encapsulation layer 80 is provided on the surface of the second planar layer 70 away from the driving circuit layer 40, and the encapsulation layer 80 and the driving circuit layer 40 seal the plurality of color conversion layers 50 in the plurality of light-passing layers. in slot a.
  • the optional material of the encapsulation layer 80 is SiNx/SiO2, PR (photoresist) and other organic or inorganic encapsulation materials, and the encapsulation layer 80 is covered in the second planar layer 70 Away from the surface of the driving circuit layer 40 , the encapsulation layer and the driving circuit layer 40 respectively seal a plurality of color conversion layers 50 in the plurality of light-transmitting grooves a, which can prevent water and oxygen from entering the light-transmitting grooves In a, the light effect of light passing through the color conversion layer 50 is affected.
  • the light emitted by the light emitting diode chip 20 passes through the driving circuit layer 40, and then passes through the driving circuit layer 40, and the light output from the driving circuit layer 40 enters the color conversion layer 50, enters the The light of the color conversion layer 50 is converted by the color conversion layer 50 and emitted from the light-through groove a.
  • FIG. 2 is a schematic structural diagram of another display panel provided by the embodiment of the present application. :
  • the number of light-transmitting grooves a corresponding to the number of light-emitting diode chips 20 is provided on the base, and the plurality of light-transmitting grooves a are respectively used to accommodate the plurality of color conversion layers 50 .
  • the light emitted by the LED chip 20 directly enters the color conversion layer 50 , passes through the color conversion layer 50 to convert the color of the light, and exits from the light-through slot a.
  • the epitaxial layer 21 of the light emitting diode chip 20 is closer to the color conversion layer 50, the epitaxial layer 21 is grown on the substrate, and can be directly connected to the When the color conversion layer 50 is in contact, the light emitted by the light emitting diode chip 20 does not need to pass through the driving circuit layer 40. In this way, the display panel manufactured by the second implementation mode has better light, and the light emitted by the light emitting diode chip 20 passes through the color conversion layer.
  • the transmittance of the layer 50 is higher, and the substrate can be a sapphire substrate.
  • the method for manufacturing a display panel further includes the steps of:
  • a glass substrate 90 is provided in the driving circuit layer 40 on a surface away from the substrate.
  • the optional material of the encapsulation layer 80 is SiNx/SiO2, PR (photoresist) and other organic or inorganic encapsulation materials, the encapsulation layer 80 covers the second surface 12 of the substrate, the encapsulation layer and a plurality of light emitting
  • the diode chip 20 seals the plurality of color conversion layers 50 in the plurality of light-transmitting grooves a respectively, which can prevent water and oxygen from entering the light-transmitting groove a and affect the light passing through the color conversion layer 50. effect.
  • the glass substrate 90 is used to protect the driving circuit layer 40 and enhance the strength of the display panel.
  • An embodiment of the present application provides a display panel, the display panel includes a substrate, a plurality of LED chips 20, a first flat layer 30 and a plurality of color conversion layers 50; the substrate includes a first surface 11 and a second surface opposite to each other Surface 12; the plurality of LED chips 20 are disposed on the first surface 11 of the substrate; the first planar layer 30 is disposed on the first surface 11 of the substrate and covers the plurality of LED chips 20 , a driving circuit layer 40 electrically connected to a plurality of LED chips 20 is provided on the surface of the first planar layer 30 away from the substrate.
  • the plurality of color conversion layers 50 correspond to at least part of the LED chips in the plurality of LED chips 20, and the color conversion layer is used to convert the light emitted by the light emitting regions of the plurality of LED chips 20. color.
  • the display panel is manufactured by the above method.
  • the display panel disclosed in the embodiment of the present application omits the structure for assisting the process of stripping, giant turning, pairing, and bonding of the light emitting diode chip 20.
  • the display panel The overall structure is more compact and simple.
  • the LED chip 20 includes an epitaxial layer 21 , a first electrode 22 a and a second electrode 22 b and a protective layer 23 .
  • the epitaxial layer 21 is in contact with the first surface 11 of the substrate, and the epitaxial layer 21 is the light emitting area of the LED chip 20 .
  • the first electrode 22 a and the second electrode 22 b are connected to the epitaxial layer 21 and the driving circuit layer 40 .
  • the protection layer 23 is disposed around the first electrode 22a and the second electrode 22b.
  • the epitaxial layer 21 corresponds to the color of the substrate.
  • the light emitting diode chip 20 is formed on the substrate, specifically, the epitaxial layer 21 is grown on the substrate first, and then the first electrode is formed on the epitaxial layer 21 through a yellow light process. 22a and the second electrode 22b, and a protective layer 23 is formed around the first electrode 22a and the second electrode 22b by a yellow light process.
  • the first flat layer 30 is provided with a plurality of light-shielding holes 31 .
  • a light-isolation layer 60 for isolating adjacent LED chips 20 is disposed in the light-isolation hole 31 .
  • the light-shielding layer 60 can be formed on the first flat layer 30 by yellow light process, and then the light-shielding hole 31 is filled with black organic or inorganic material to form the light-shielding layer 60 .
  • the driving circuit layer 40 includes a transparent area 41 and a wiring area 42 .
  • the light-transmitting area 41 corresponds to the light-emitting areas of the plurality of LED chips 20 , so that the light emitted by the light-emitting areas of the plurality of LED chips 20 passes through the light-transmitting area 41 .
  • the driving circuit layer 40 is specifically a thin film transistor driving circuit layer 40 (TFT driving circuit layer), and the light-transmitting region 41 in the driving circuit layer 40 is mainly made of indium tin oxide (English , Indium Tin Oxide (abbreviation, ITO) and other materials made of electrode leads, indium tin oxide has the characteristics of transparent conduction, when the light-emitting diode chip 20 is emitting light, the light emitted by the light-emitting area of the light-emitting diode chip 20 can pass through the The light transmission area 41, the driving circuit layer 40 is provided with a light transmission area 41, which can effectively improve the light transmittance of the driving circuit layer 40, in the embodiment of the present application, the driving circuit layer 40 is provided with a wiring area 42 , so as to prevent cross-color generation when the light emitted by the light-emitting diode chip 20 enters the driving circuit layer 40 .
  • TFT driving circuit layer thin film transistor driving circuit layer 40
  • ITO Indium Tin Oxide
  • the driving circuit layer 40 includes at least one of an array substrate row driving circuit (GOA circuit), an emission driving circuit (EOA circuit), a pixel control circuit (pixel circuit), and a demultiplexer circuit (Dmux circuit).
  • GAA circuit array substrate row driving circuit
  • EOA circuit emission driving circuit
  • pixel circuit pixel control circuit
  • Dmux circuit demultiplexer circuit
  • the display panel also includes a second flat layer 70, the second flat layer 70 is disposed on the surface of the driving circuit layer 40 away from the substrate, and the second flat layer 70 is provided with a number equal to that of the color conversion layer.
  • the number of 50 corresponds to the light-through slots a for accommodating the color conversion layer 50 .
  • the second flat layer 70 is attached to the driving circuit layer 40, and the surface of the second flat layer 70 away from the driving circuit layer 40 is flatly arranged.
  • the material of the second flat layer 70 can specifically be optical Transparent adhesive (English, Optically Clear Adhesive; abbreviation, OC), polyimide (English, Polyimide; abbreviation, PI) and other organic or inorganic materials.
  • the display panel also includes an encapsulation layer 80, the encapsulation layer 80 is disposed on the surface of the second planar layer 70 away from the driving circuit layer 40, the encapsulation layer 80 and the driving circuit layer 40 convert the color
  • the layer 50 is enclosed in the light-through groove a.
  • the optional material of the encapsulation layer 80 is SiNx/SiO2, PR (photoresist) and other organic or inorganic encapsulation materials, and the encapsulation layer 80 covers the surface of the second planar layer 70 away from the driving circuit layer 40 , the encapsulation layer and the driving circuit layer 40 respectively seal a plurality of color conversion layers 50 in the plurality of light-passing grooves a, which can prevent water and oxygen from entering the light-passing grooves a, thereby affecting light passing through
  • the light emitting direction of the light emitting diode chip 20 is shown in FIG. 1 .
  • the embodiment of the present application also provides a display panel, and the display panel includes:
  • the base includes a first surface 11 and a second surface 12 opposite to each other; the base is provided with a plurality of light-through grooves a.
  • the number of light-emitting diode chips 20 corresponds to the number of the light-transmitting groove a.
  • a plurality of the light-emitting diode chips 20 are arranged in an array and arranged on the first surface 11 of the substrate.
  • the light-emitting diode chips 20 have a light-emitting area.
  • the first flat layer 30 is arranged on the first surface 11 of the base and covers the plurality of light-emitting diode chips 20, and the surface of the first flat layer 30 away from the base is provided with a plurality of light-emitting diodes.
  • the chip 20 is electrically connected to the driving circuit layer 40 .
  • a plurality of color conversion layers 50 correspond to the number of at least some of the light transmission grooves in the plurality of light transmission grooves, and the plurality of color conversion layers 50 are respectively accommodated in the plurality of light transmission grooves Groove a, the plurality of color conversion layers 50 respectively correspond to the light emitting regions of the plurality of LED chips 20 , for converting the color of the light emitted by the light emitting regions of the plurality of LED chips 20 .
  • the epitaxial layer 21 in the light-emitting diode chip 20 is grown on the substrate and can be in direct contact with the color conversion layer 50.
  • the light emitted by the light-emitting area in the light-emitting diode chip 20 can directly enter the color conversion layer 50, and is transmitted by the color conversion layer 50.
  • the color conversion layer 50 converts the color and emits, which improves the light extraction efficiency of the light emitted by the LED chip 20 from the color conversion layer 50.
  • the LED chip 20 emits light, and the light output direction is shown in FIG. 2 .
  • the display panel also includes an encapsulation layer 80 and a glass substrate 90 .
  • the encapsulation layer 80 is disposed on the second surface 12 of the substrate, and the encapsulation layer 80 and the plurality of LED chips 20 respectively enclose the plurality of color conversion layers 50 in the plurality of light-transmitting grooves a.
  • the glass substrate 90 is disposed on the surface of the driving circuit layer 40 away from the base.
  • the optional material of the encapsulation layer 80 is SiNx/SiO2, PR (photoresist) and other organic or inorganic encapsulation materials, and the encapsulation layer 80 covers the second surface 12 of the substrate
  • the encapsulation layer and the plurality of light emitting diode chips 20 are sealed and the plurality of color conversion layers 50 are respectively sealed in the plurality of light-passing grooves a, which can prevent water and oxygen from entering the light-passing groove a, thereby affecting light transmission.
  • the glass substrate 90 is used to protect the driving circuit layer 40 and enhance the strength of the display panel.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un panneau d'affichage et son procédé de fabrication. Le procédé comprend les étapes consistant à : fournir un substrat (10) qui présente une première surface (11) et une seconde surface (12) opposées l'une à l'autre ; former de multiples puces de diode électroluminescente (20) disposées en réseaux sur la première surface du substrat ; remplir la première surface du substrat avec un premier matériau pour former une première couche de planarisation (30) qui recouvre les multiples puces de diode électroluminescente ; former une couche de circuit d'attaque (40) sur une surface de la première couche de planarisation à l'opposé du substrat, et connecter électriquement la couche de circuit d'attaque aux multiples puces de diode électroluminescente ; et former une couche de conversion de couleur (50) sur les côtés électroluminescents d'au moins une partie des multiples puces de diode électroluminescente.
PCT/CN2021/113585 2021-08-19 2021-08-19 Panneau d'affichage et son procédé de fabrication WO2023019520A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/113585 WO2023019520A1 (fr) 2021-08-19 2021-08-19 Panneau d'affichage et son procédé de fabrication

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PCT/CN2021/113585 WO2023019520A1 (fr) 2021-08-19 2021-08-19 Panneau d'affichage et son procédé de fabrication

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WO2023019520A1 true WO2023019520A1 (fr) 2023-02-23

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130092896A (ko) * 2012-02-13 2013-08-21 엘지전자 주식회사 Ｌｅｄ 디스플레이 장치 및 그것의 제조 방법
CN103855179A (zh) * 2012-12-03 2014-06-11 孙润光 一种无机发光二极管显示器件结构
CN108493209A (zh) * 2018-05-24 2018-09-04 京东方科技集团股份有限公司 一种显示基板、显示装置以及显示基板的制作方法
CN111403335A (zh) * 2020-03-26 2020-07-10 武汉华星光电半导体显示技术有限公司 显示器件及其制作方法
KR20210003439A (ko) * 2019-07-02 2021-01-12 셀로코아이엔티 주식회사 발광다이오드 표시장치 및 그 제조방법
CN112885970A (zh) * 2019-11-14 2021-06-01 成都辰显光电有限公司 显示面板、电子设备及显示面板的制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130092896A (ko) * 2012-02-13 2013-08-21 엘지전자 주식회사 Ｌｅｄ 디스플레이 장치 및 그것의 제조 방법
CN103855179A (zh) * 2012-12-03 2014-06-11 孙润光 一种无机发光二极管显示器件结构
CN108493209A (zh) * 2018-05-24 2018-09-04 京东方科技集团股份有限公司 一种显示基板、显示装置以及显示基板的制作方法
KR20210003439A (ko) * 2019-07-02 2021-01-12 셀로코아이엔티 주식회사 발광다이오드 표시장치 및 그 제조방법
CN112885970A (zh) * 2019-11-14 2021-06-01 成都辰显光电有限公司 显示面板、电子设备及显示面板的制造方法
CN111403335A (zh) * 2020-03-26 2020-07-10 武汉华星光电半导体显示技术有限公司 显示器件及其制作方法

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