WO2023017362A1 - 表示装置の補正方法 - Google Patents

表示装置の補正方法 Download PDF

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Publication number
WO2023017362A1
WO2023017362A1 PCT/IB2022/057146 IB2022057146W WO2023017362A1 WO 2023017362 A1 WO2023017362 A1 WO 2023017362A1 IB 2022057146 W IB2022057146 W IB 2022057146W WO 2023017362 A1 WO2023017362 A1 WO 2023017362A1
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WO
WIPO (PCT)
Prior art keywords
transistor
light
layer
display device
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2022/057146
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English (en)
French (fr)
Japanese (ja)
Inventor
楠紘慈
川島進
熱海知昭
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2023541137A priority Critical patent/JPWO2023017362A1/ja
Priority to US18/294,395 priority patent/US12300174B2/en
Publication of WO2023017362A1 publication Critical patent/WO2023017362A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/029—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel
    • G09G2320/0295—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel by monitoring each display pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving

Definitions

  • One embodiment of the present invention relates to a correction method for a display device.
  • one embodiment of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input/output devices, and driving methods thereof. , or their manufacturing methods, can be mentioned as an example.
  • a semiconductor device is a device that utilizes semiconductor characteristics and refers to a circuit including a semiconductor element (transistor, diode, photodiode, or the like), a device having the same circuit, and the like. It also refers to all devices that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip with an integrated circuit, and an electronic component containing a chip in a package are examples of semiconductor devices.
  • storage devices, display devices, light-emitting devices, lighting devices, electronic devices, and the like are themselves semiconductor devices and may include semiconductor devices.
  • display devices include liquid crystal display devices, organic EL (Electro Luminescence) elements, light-emitting devices equipped with light-emitting elements such as light-emitting diodes (LEDs), and electronic paper that performs display by means of electrophoresis. is mentioned.
  • organic EL Electro Luminescence
  • LEDs light-emitting diodes
  • the basic structure of an organic EL device is to sandwich a layer containing a light-emitting organic compound between a pair of electrodes. By applying a voltage to this device, light can be obtained from the light-emitting organic compound.
  • a display device to which such an organic EL element is applied does not require a backlight, which is required in a liquid crystal display device or the like.
  • a display device suitable for displaying fast-moving images can be realized.
  • Patent Document 1 describes an example of a display device using an organic EL element.
  • Japanese Patent Application Laid-Open No. 2002-200001 discloses a circuit configuration that corrects variations in threshold voltage of transistors for each pixel in a pixel circuit that controls the light emission luminance of an organic EL element to improve the display quality of a display device.
  • An object of one embodiment of the present invention is to provide a display device with improved display quality. Another object of one embodiment of the present invention is to provide a novel display device. Another object of one embodiment of the present invention is to provide a novel correction method for a display device.
  • One embodiment of the present invention includes a pixel, a first circuit, and a second circuit, the pixel including a light-emitting element, a transistor, and a capacitor, and the transistor supplying a first signal to the pixel.
  • a first signal is generated by correcting image data using a second signal, a third process is performed, and after completion of the third process, the first signal is supplied to a pixel, a fourth process is performed, A correction method for a display device.
  • One embodiment of the present invention includes a pixel, a first circuit, and a second circuit, the pixel including a light-emitting element, a transistor, and a capacitor, and the transistor supplying a first signal to the pixel.
  • a method of correcting a display device having a function of controlling a current supplied to a light emitting element based on a first circuit measuring a current flowing through a pixel and generating a second signal based on the current , a second process is performed, after the second process is completed, a voltage for correcting the threshold voltage of the transistor is obtained, and the voltage is held in a capacitor.
  • a first signal is generated by correcting the image data using the second signal, a third process is performed, and after the first process and the third process are completed, the first signal is supplied to the pixel; It is a correction method for a display device that performs processing.
  • the first process and the third process may be performed at the same time.
  • the second process may measure a current flowing through the light emitting element.
  • the transistor has a back gate and has a function of controlling the threshold voltage of the transistor based on a potential supplied to the back gate.
  • a first process may obtain the voltage between the backgate and the source of the transistor.
  • the fourth process may supply the first signal to the gate of the transistor.
  • a display device with improved display quality can be provided.
  • one embodiment of the present invention can provide a novel display device.
  • one embodiment of the present invention can provide a novel display device correction method.
  • FIG. 1 is a diagram illustrating an example of a display device.
  • FIG. 2 is a diagram illustrating an example of a display device.
  • FIG. 3 is a diagram illustrating an example of a display device.
  • 4A to 4C are diagrams showing circuit symbols of transistors.
  • FIG. 5 is a flowchart for explaining an example of a display device correction method.
  • FIG. 6 is a timing chart explaining an operation example of the display device.
  • FIG. 7 is a diagram for explaining an operation example of the display device.
  • FIG. 8 is a diagram for explaining an operation example of the display device.
  • FIG. 9 is a diagram for explaining an operation example of the display device.
  • FIG. 10 is a diagram explaining an operation example of the display device.
  • FIG. 11 is a diagram for explaining an operation example of the display device.
  • FIG. 1 is a diagram illustrating an example of a display device.
  • FIG. 2 is a diagram illustrating an example of a display device.
  • FIG. 3 is a
  • FIG. 12 is a diagram explaining an operation example of the display device.
  • FIG. 13 is a diagram for explaining an operation example of the display device.
  • FIG. 14 is a flowchart for explaining an example of a display device correction method.
  • FIG. 15 is a diagram showing an example of a specific configuration of a display device.
  • 16A to 16C are diagrams illustrating configuration examples of display devices.
  • 17A to 17F are diagrams showing configuration examples of pixels.
  • FIG. 18 is a diagram illustrating a configuration example of a display device.
  • 19A and 19B are diagrams illustrating configuration examples of a display device.
  • 20A to 20F are diagrams showing configuration examples of light-emitting devices.
  • 21A to 21F are diagrams illustrating examples of electronic devices.
  • 22A to 22F are diagrams illustrating examples of electronic devices.
  • 23A and 23B are diagrams illustrating an example of an electronic device.
  • FIG. 24 is a diagram illustrating an example of an electronic device;
  • connection relationships other than the connection relationships shown in the drawings or the text are not limited to the predetermined connection relationships, for example, the connection relationships shown in the drawings or the text. It is assumed that X and Y are objects (for example, devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).
  • X and Y are electrically connected is an element that enables electrical connection between X and Y (for example, switch, transistor, capacitive element, inductor, resistive element, diode, display devices, light emitting devices, loads, etc.) can be connected between X and Y.
  • X and Y for example, switch, transistor, capacitive element, inductor, resistive element, diode, display devices, light emitting devices, loads, etc.
  • a circuit that enables functional connection between X and Y eg, a logic circuit (inverter, NAND circuit, NOR circuit, etc.), a signal conversion Circuits (digital-to-analog conversion circuit, analog-to-digital conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (booster circuit, step-down circuit, etc.), level shifter circuit that changes the potential level of signals, etc.), voltage source, current source , switching circuit, amplifier circuit (circuit that can increase signal amplitude or current amount, operational amplifier, differential amplifier circuit, source follower circuit, buffer circuit, etc.), signal generation circuit, memory circuit, control circuit, etc.) It is possible to connect one or more between As an example, even if another circuit is interposed between X and Y, when a signal output from X is transmitted to Y, X and Y are considered to be functionally connected. do.
  • X and Y are electrically connected, it means that X and Y are electrically connected (that is, another element or another circuit is interposed), and the case where X and Y are directly connected (that is, the case where X and Y are connected without another element or another circuit between them). (if any).
  • X and Y, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are electrically connected to each other, and X, the source of the transistor (or the 1 terminal, etc.), the drain of the transistor (or the second terminal, etc.), and are electrically connected in the order of Y.”
  • the source (or first terminal, etc.) of the transistor is electrically connected to X
  • the drain (or second terminal, etc.) of the transistor is electrically connected to Y
  • X is the source of the transistor ( or the first terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are electrically connected in this order.
  • X is electrically connected to Y through the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X is the source (or first terminal, etc.) of the transistor; terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are provided in this connection order.
  • the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor can be distinguished by defining the order of connection in the circuit configuration.
  • the technical scope can be determined.
  • these expression methods are examples, and are not limited to these expression methods.
  • X and Y are objects (for example, devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).
  • circuit diagram shows independent components electrically connected to each other, if one component has the functions of multiple components.
  • one component has the functions of multiple components.
  • the term "electrically connected" in this specification includes cases where one conductive film functions as a plurality of constituent elements.
  • the term “capacitance element” refers to, for example, a circuit element having a capacitance value higher than 0 F, a wiring region having a capacitance value higher than 0 F, a parasitic capacitance, a transistor can be the gate capacitance of Therefore, in this specification and the like, the term “capacitance element” means not only a circuit element including a pair of electrodes and a dielectric material contained between the electrodes, but also a parasitic element occurring between wirings. Capacitance, gate capacitance generated between one of the source or drain of the transistor and the gate, and the like are included.
  • capacitor element in addition, terms such as “capacitance element”, “parasitic capacitance”, and “gate capacitance” can be replaced with terms such as “capacitance”, and conversely, the term “capacitance” can be replaced with terms such as “capacitance element”, “parasitic capacitance”, and “capacitance”. term such as “gate capacitance”.
  • a pair of electrodes” in the “capacitance” can be replaced with a "pair of conductors," a “pair of conductive regions,” a “pair of regions,” and the like.
  • the value of the capacitance can be, for example, 0.05 fF or more and 10 pF or less. Also, for example, it may be 1 pF or more and 10 ⁇ F or less.
  • a transistor has three terminals called a gate, a source, and a drain.
  • the gate is the control terminal that controls the amount of current that flows between the source and drain.
  • the two terminals functioning as source or drain are the input and output terminals of the transistor.
  • One of the two input/output terminals functions as a source and the other as a drain depending on the conductivity type of the transistor (n-channel type, p-channel type) and the level of potentials applied to the three terminals of the transistor. Therefore, in this specification and the like, the terms "source” and “drain” can be used interchangeably.
  • a transistor may have a back gate in addition to the three terminals described above, depending on the structure of the transistor.
  • one of the gate and back gate of the transistor may be referred to as a first gate
  • the other of the gate and back gate of the transistor may be referred to as a second gate.
  • the terms "gate” and “backgate” may be used interchangeably for the same transistor.
  • the respective gates may be referred to as a first gate, a second gate, a third gate, or the like in this specification and the like.
  • a “node” can be replaced with a terminal, a wiring, an electrode, a conductive layer, a conductor, an impurity region, or the like, depending on the circuit configuration, device structure, and the like. Also, terminals, wirings, etc. can be rephrased as “nodes”.
  • ordinal numbers such as “first”, “second”, and “third” are added to avoid confusion of constituent elements. Therefore, the number of components is not limited. Also, the order of the components is not limited. For example, a component referred to as “first” in one embodiment such as this specification is a component referred to as “second” in other embodiments or claims. It is possible. Further, for example, a component referred to as “first” in one of the embodiments in this specification may be omitted in other embodiments or the scope of claims.
  • electrode B on insulating layer A does not require that electrode B be formed on insulating layer A in direct contact with another configuration between insulating layer A and electrode B. Do not exclude those containing elements.
  • electrode B overlapping the insulating layer A is not limited to the state in which the electrode B is formed on the insulating layer A, but the state in which the electrode B is formed under the insulating layer A or A state in which the electrode B is formed on the right (or left) side of the insulating layer A is not excluded.
  • the terms “adjacent” and “proximity” do not limit that components are in direct contact with each other.
  • electrode B adjacent to insulating layer A it is not necessary that insulating layer A and electrode B are formed in direct contact, and another component is provided between insulating layer A and electrode B. Do not exclude what is included.
  • Electrode may be used as part of a “wiring” and vice versa.
  • the term “electrode” or “wiring” includes, for example, the case where a plurality of “electrodes” or “wiring” are integrally formed.
  • terminal may be used as part of "wiring” or “electrode”, and vice versa.
  • terminal includes, for example, a case in which a plurality of "electrodes”, “wirings”, or “terminals” are integrally formed.
  • an “electrode” can be part of a “wiring” or a “terminal”.
  • a “terminal” can be part of a “wiring” or an “electrode”.
  • terms such as “electrode”, “wiring”, or “terminal” may be replaced with terms such as “region”.
  • terms such as “wiring”, “signal line”, and “power line” can be interchanged depending on the case or situation. For example, it may be possible to change the term “wiring” to the term “signal line”. Also, for example, it may be possible to change the term “wiring” to a term such as "power supply line”. Also, vice versa, terms such as “signal line” and “power line” may be changed to the term “wiring”. It may be possible to change terms such as “power line” to terms such as “signal line”. Also, vice versa, terms such as “signal line” may be changed to terms such as "power line”. In addition, the term “potential” applied to the wiring may be changed to the term “signal” depending on the circumstances. And vice versa, terms such as “signal” may be changed to the term “potential”.
  • a switch has a plurality of terminals and has a function of switching (selecting) conduction or non-conduction between the terminals.
  • a switch is said to be “conducting” or “on” if it has two terminals and the two terminals are conducting. Also, when both terminals are non-conducting, the switch is said to be “non-conducting” or “off”. Note that switching to one of the conducting state and the non-conducting state, or maintaining one of the conducting state and the non-conducting state may be referred to as "controlling the conducting state.”
  • a switch has a function of controlling whether or not to allow current to flow.
  • a switch is one that has a function of selecting and switching a path through which current flows.
  • an electrical switch, a mechanical switch, or the like can be used.
  • the switch is not limited to a specific one as long as it can control current.
  • switches include transistors (eg, bipolar transistors, MOS transistors, etc.), diodes (eg, PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator Metal) diodes, MIS (Metal Insulator Semiconductor) diodes, diode connections transistors), or a logic circuit combining these.
  • transistors eg, bipolar transistors, MOS transistors, etc.
  • diodes eg, PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator Metal) diodes, MIS (Metal Insulator Semiconductor) diodes, diode connections transistors
  • the “conducting state” or “on state” of the transistor means a state in which the source electrode and the drain electrode of the transistor can be considered to be electrically short-circuited.
  • a “non-conducting state” or an “off state” of a transistor means a state in which a source electrode and a drain electrode of the transistor can be considered to be electrically cut off. Note that the polarity (conductivity type) of the transistor is not particularly limited when the transistor is operated as a simple switch.
  • a mechanical switch is a switch using MEMS (Micro Electro Mechanical Systems) technology.
  • the switch has an electrode that can be mechanically moved to select a conductive state or a non-conductive state by moving the electrode.
  • parallel means a state in which two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, the case of ⁇ 5° or more and 5° or less is also included.
  • substantially parallel or “substantially parallel” refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less.
  • Perfect means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, the case of 85° or more and 95° or less is also included.
  • arrows indicating the X direction, the Y direction, and the Z direction may be attached in the drawings and the like according to this specification.
  • the “X direction” is the direction along the X axis, and the forward direction and the reverse direction may not be distinguished unless explicitly stated.
  • the X direction, the Y direction, and the Z direction are directions that cross each other. More specifically, the X-direction, Y-direction, and Z-direction are directions orthogonal to each other.
  • first direction or “first direction”
  • second direction or a “second direction”
  • third direction or “third direction”.
  • FIG. 1 illustrates a structural example of a display device according to one embodiment of the present invention.
  • the display device 10 includes pixels 11 , monitor circuits 12 , and image processing circuits 13 . Further, the pixel 11 includes a light emitting element 61, transistors M1 to M6, and capacitors C1 and C2.
  • the monitor circuit 12 has a function of supplying an arbitrary potential to the wiring ML.
  • the monitor circuit 12 has a function of measuring the current flowing through the pixel 11 through the wiring ML.
  • the monitor circuit 12 also has a function of generating arbitrary data based on the measured current. For example, data of current-voltage characteristics may be generated by obtaining a plurality of values of arbitrary potential supplied to the wiring ML and values of current flowing through the wiring ML at that time as arbitrary data.
  • the image processing circuit 13 has a function of correcting image data using arbitrary data generated by the monitor circuit 12 and generating display data. Note that in this embodiment and the like, display data means corrected image data. Further, the image processing circuit 13 has a function of supplying display data or an arbitrary potential to the wiring DL. For example, as an arbitrary potential, a potential that can turn off the transistor M2 may be supplied.
  • a gate of the transistor M1 is electrically connected to the wiring GLa.
  • One of the source and drain of the transistor M1 is electrically connected to the wiring DL.
  • the other of the source or drain of transistor M1 is electrically connected to the gate of transistor M2.
  • the transistor M1 has a function of making the gate of the transistor M2 and the wiring DL conductive or non-conductive.
  • a gate of the transistor M2 is electrically connected to one terminal of the capacitor C1.
  • One of the source and the drain of transistor M2 is electrically connected to wiring 51 .
  • the other of the source and drain of transistor M2 is electrically connected to the other terminal of capacitor C1.
  • the transistor M2 has a back gate.
  • a back gate of the transistor M2 is electrically connected to one terminal of the capacitor C2.
  • the other terminal of the capacitor C2 is electrically connected to the other of the source and drain of the transistor M2.
  • a gate of the transistor M3 is electrically connected to the wiring GLb.
  • One of the source and drain of the transistor M3 is electrically connected to one terminal of the capacitor C1.
  • the other of the source and drain of transistor M3 is electrically connected to the other terminal of capacitor C1.
  • the transistor M3 has a function of making a conductive state or a non-conductive state between the gate of the transistor M2 and the other of the source or the drain of the transistor M2.
  • a gate of the transistor M4 is electrically connected to the wiring GLb.
  • One of the source and the drain of transistor M4 is electrically connected to wiring 53 .
  • the other of the source and drain of transistor M4 is electrically connected to one terminal of capacitor C2.
  • the transistor M4 has a function of bringing the wiring 53 and one terminal of the capacitor C2 into conduction or non-conduction.
  • a gate of the transistor M5 is electrically connected to the wiring GLc.
  • One of the source and the drain of the transistor M5 is electrically connected to the other of the source and the drain of the transistor M2.
  • the other of the source and drain of the transistor M5 is electrically connected to one terminal (eg, anode terminal) of the light emitting element 61 .
  • the transistor M5 has a function of making the other of the source or drain of the transistor M2 and one terminal of the light emitting element 61 conductive or non-conductive.
  • a gate of the transistor M6 is electrically connected to the wiring GLa.
  • One of the source and the drain of the transistor M6 is electrically connected to the other of the source and the drain of the transistor M2.
  • the other of the source and drain of the transistor M6 is electrically connected to the wiring ML.
  • the transistor M6 has a function of bringing the other of the source or the drain of the transistor M2 and the wiring ML into conduction or non-conduction.
  • the other terminal (for example, cathode terminal) of the light emitting element 61 is electrically connected to the wiring 52 .
  • the light emitting element 61 emits light with an emission intensity corresponding to the amount of current flowing through the light emitting element 61 .
  • an EL element an EL element containing organic and inorganic substances, an organic EL element, or an inorganic EL element
  • an LED eg, a white LED, a red LED, a green LED, a blue LED, etc.
  • a micro LED e.g., an LED with a side of less than 0.1 mm
  • a QLED Quadantum-dot Light Emitting Diode
  • an electron-emitting device can be used.
  • the transistor M2 has a function of controlling the amount of current flowing through the light emitting element 61 . That is, the transistor M2 has a function of controlling the light emission intensity of the light emitting element 61. FIG. Therefore, in this specification, the transistor M2 may be referred to as a "drive transistor".
  • each of the capacitors C1 and C2, the other of the source or the drain of the transistor M2, the other of the source or the drain of the transistor M3, the one of the source or the drain of the transistor M5, and the source or the drain of the transistor M6 is also referred to as a node ND1.
  • a region where one terminal of the capacitor C2, the back gate of the transistor M2, and the other of the source or the drain of the transistor M4 are electrically connected to each other is also referred to as a node ND2.
  • a region in which the other of the source and the drain of the transistor M1, the other of the source and the drain of the transistor M3, one terminal of the capacitor C1, and the gate of the transistor M2 are electrically connected to each other is also referred to as a node ND3.
  • the capacitor C1 has a function of holding a potential difference (voltage) between the other of the source or drain of the transistor M2 and the gate of the transistor M2, for example, when the node ND3 is in a floating state.
  • the capacitor C2 has a function of holding a potential difference (voltage) between the other of the source or drain of the transistor M2 and the back gate of the transistor M2, for example, when the node ND2 is in a floating state.
  • the transistors M1 to M6 are enhancement type (normally-off type) n-channel field effect transistors unless otherwise specified. Therefore, its threshold voltage (also referred to as “Vth”) is assumed to be higher than 0V.
  • a transistor including various semiconductors can be used for the pixel 11 according to one embodiment of the present invention.
  • a transistor including a single crystal semiconductor, a polycrystalline semiconductor, a microcrystalline semiconductor, or an amorphous semiconductor for a channel formation region can be used.
  • the main component is not limited to a single semiconductor (for example, silicon (Si) or germanium (Ge)) composed of a single element.
  • Gallium (GaAs)), an oxide semiconductor, or the like can be used.
  • the display device 10 is formed using an n-channel transistor is described in this embodiment and the like, one embodiment of the present invention is not limited thereto. Some or all of the transistors forming the display device 10 may be p-channel transistors.
  • transistors with various structures can be used for the pixel 11 according to one embodiment of the present invention.
  • planar type FIN type (fin type), TRI-GATE type (tri-gate type), top gate type, bottom gate type, or dual gate type (structure in which gates are arranged above and below a channel)
  • Transistors with various configurations can be used.
  • a MOS transistor, a junction transistor, a bipolar transistor, or the like can be used as a transistor according to one embodiment of the present invention, for example.
  • an OS transistor (a transistor including an oxide semiconductor in a semiconductor layer in which a channel is formed) may be used as the transistor included in the pixel 11 .
  • An oxide semiconductor has a bandgap of 2 eV or more, and thus has a significantly low off-state current. Therefore, an OS transistor is preferably used as a transistor functioning as a switch.
  • OS transistors can be used for the transistor M1 and the transistors M3 to M6.
  • the off current value of the OS transistor per 1 ⁇ m channel width at room temperature is 1 aA (1 ⁇ 10 ⁇ 18 A) or less, 1 zA (1 ⁇ 10 ⁇ 21 A) or less, or 1 yA (1 ⁇ 10 ⁇ 24 A) or less. can do.
  • the off current value of a Si transistor (a transistor containing silicon in a semiconductor layer in which a channel is formed) per 1 ⁇ m channel width at room temperature is 1 fA (1 ⁇ 10 ⁇ 15 A) or more and 1 pA (1 ⁇ 10 ⁇ 12 A). ) below. Therefore, it can be said that the off-state current of the OS transistor is about ten digits lower than the off-state current of the Si transistor.
  • the off current of the OS transistor hardly increases even in a high-temperature environment. Specifically, the off-state current of an OS transistor hardly increases even under an environmental temperature higher than or equal to room temperature and lower than or equal to 200°C. Also, the on-current is less likely to decrease even in a high-temperature environment.
  • a display device including an OS transistor can operate stably and have high reliability even in a high-temperature environment.
  • the OS transistor has a high withstand voltage between the source and the drain.
  • an OS transistor as a transistor included in the pixel 11
  • a potential difference (voltage) between a potential supplied to the wiring 51 (also referred to as an anode potential) and a potential supplied to the wiring 52 (also referred to as a cathode potential) is reduced. Even when the size is large, the operation is stable, and a highly reliable display device can be realized.
  • an OS transistor is preferably used for one or both of the transistor M2 and the transistor M5.
  • a semiconductor layer of an OS transistor includes, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, and cerium. , neodymium, hafnium, tantalum, tungsten, and magnesium) and zinc.
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) is preferably used for the semiconductor layer.
  • an oxide containing indium (In), aluminum (Al), and zinc (Zn) also referred to as “IAZO”
  • IAZO oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn)
  • IAGZO oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn)
  • the In atomic ratio in the In-M-Zn oxide is preferably equal to or higher than the M atomic ratio.
  • the pixel 11 may be configured with a plurality of types of transistors using different semiconductor materials.
  • the pixel 11 may be configured with a transistor (hereinafter also referred to as an LTPS transistor) having low temperature polysilicon (LTPS) in a semiconductor layer and an OS transistor.
  • the LTPS transistor has high field effect mobility and good frequency characteristics.
  • a structure in which an LTPS transistor and an OS transistor are combined is sometimes called an LTPO.
  • the transistors included in the pixel 11 it is preferable to use an OS transistor for the transistor M1 and the transistors M3 to M6 and an LTPS transistor for the transistor M2.
  • an OS transistor as a transistor functioning as a switch for controlling conduction or non-conduction between wirings and an LTPS transistor as a transistor controlling current.
  • an LTPO that is, an LTPS transistor and an OS transistor in the pixel 11
  • a display device with low power consumption and high driving capability can be realized.
  • the method for correcting a display device of one embodiment of the present invention is not limited to the structure of a transistor, and can be applied to transistors with various structures.
  • the transistors may be provided in different layers for each type of transistor.
  • the pixel 11 is composed of a Si transistor and an OS transistor
  • a layer containing the Si transistor and a layer containing the OS transistor may be provided so as to overlap each other. With such a configuration, the area occupied by the pixels 11 is reduced.
  • the transistor M1 and the transistors M3 to M6 function as switches. Therefore, the display device 10 can be shown as in FIG.
  • the transistor M1 and the transistors M3 to M6 can be replaced with elements that can function as switches.
  • All or part of the transistors forming the pixel 11 may be transistors having back gates.
  • a transistor When a transistor is provided with a back gate, an electric field generated outside the transistor is less likely to act on a channel formation region; thus, the operation of the display device can be stabilized and the reliability of the display device can be improved.
  • the on-resistance of the transistor can be reduced.
  • the threshold voltage of the transistor can be changed.
  • FIG. 3 shows a circuit configuration example of the display device 10 in which not only the transistor M2 but also the transistor M1 and the transistors M3 to M6 are transistors having back gates.
  • FIG. 3 shows an example in which gates and back gates of the transistor M1 and the transistors M3 to M6 are electrically connected. However, it is not necessary to provide back gates for all the transistors forming the display device.
  • an arbitrary potential may be supplied to the back gate without electrically connecting the gate and the back gate.
  • the potential supplied to the back gate is not limited to the fixed potential.
  • the potentials supplied to the back gates of the transistors included in the display device may be different or the same for each transistor.
  • the transistor forming the pixel 11 may be a single-gate transistor having one gate between the source and the drain, or may be a double-gate transistor.
  • FIG. 4A shows a circuit symbol example of a double-gate transistor 180A.
  • the transistor 180A has a structure in which a transistor Tr1 and a transistor Tr2 are connected in series.
  • One of the source and the drain of the transistor Tr1 is electrically connected to the terminal S in the transistor 180A shown in FIG. 4A.
  • the other of the source and drain of the transistor Tr1 is electrically connected to one of the source and drain of the transistor Tr2.
  • the other of the source and the drain of the transistor Tr2 is electrically connected to the terminal D.
  • the gates of the transistor Tr1 and the transistor Tr2 are electrically connected, and the terminal G is also electrically connected.
  • the transistor 180A illustrated in FIG. 4A has a function of switching between a conducting state and a non-conducting state between the terminal S and the terminal D by changing the potential of the terminal G.
  • FIG. therefore, the transistor 180A, which is a double-gate transistor, includes the transistor Tr1 and the transistor Tr2 and functions as one transistor. That is, in FIG. 4A, one of the source and the drain of the transistor 180A is electrically connected to the terminal S, the other of the source and the drain is electrically connected to the terminal D, and the gate is electrically connected to the terminal G. It can be said that there are
  • the transistors forming the pixels 11 may be triple-gate transistors.
  • FIG. 4B shows a circuit symbol example of a triple-gate transistor 180B.
  • the transistor 180B has a configuration in which a transistor Tr1, a transistor Tr2, and a transistor Tr3 are connected in series.
  • One of the source and the drain of the transistor Tr1 is electrically connected to the terminal S in the transistor 180B shown in FIG. 4B.
  • the other of the source and drain of the transistor Tr1 is electrically connected to one of the source and drain of the transistor Tr2.
  • the other of the source and drain of the transistor Tr2 is electrically connected to one of the source and drain of the transistor Tr3.
  • the other of the source and the drain of the transistor Tr3 is electrically connected to the terminal D. 4B, the gates of the transistor Tr1, the transistor Tr2, and the transistor Tr3 are electrically connected, and the terminal G is also electrically connected.
  • the transistor 180B illustrated in FIG. 4B has a function of switching between a conductive state and a non-conductive state between the terminal S and the terminal D by changing the potential of the terminal G. Therefore, the transistor 180B, which is a triple-gate transistor, includes the transistor Tr1, the transistor Tr2, and the transistor Tr3 and functions as one transistor. That is, in FIG. 4B, one of the source and the drain of the transistor 180B is electrically connected to the terminal S, the other of the source and the drain is electrically connected to the terminal D, and the gate is electrically connected to the terminal G. It can be said that there are
  • the transistor forming the pixel 11 may have a configuration in which four or more transistors are connected in series.
  • a transistor 180C illustrated in FIG. 4C has a structure in which six transistors (transistors Tr1 to Tr6) are connected in series. Further, in the transistor 180C shown in FIG. 4C, the respective gates of the six transistors are electrically connected and electrically connected to the terminal G as well.
  • the transistor 180C illustrated in FIG. 4C has a function of switching between a conducting state and a non-conducting state between the terminal S and the terminal D by changing the potential of the terminal G. Therefore, the transistor 180C includes the transistors Tr1 to Tr6 and functions as one transistor. That is, in FIG. 4C, one of the source and the drain of the transistor 180C is electrically connected to the terminal S, the other of the source and the drain is electrically connected to the terminal D, and the gate is electrically connected to the terminal G. It can be said that there are
  • a transistor having multiple gates and having multiple gates electrically connected to each other is referred to as a "multi-gate transistor” or a “multi-gate transistor.” is sometimes called.
  • the channel length of the transistor may be increased in order to improve electrical characteristics in the saturation region.
  • Multi-gate transistors may be used to implement long channel length transistors.
  • FIG. 5 is a flowchart illustrating an example of a correction method for the display device 10.
  • FIG. FIG. 5 shows steps S01 to S05.
  • step S01 the threshold voltage of the drive transistor (transistor M2) is corrected.
  • step S02 is started.
  • step S02 current-voltage characteristics of the light emitting element 61 are obtained.
  • step S03 is started.
  • step S03 the image data is corrected.
  • step S04 is started.
  • step S04 display data (corrected image data) is written.
  • step S05 is started.
  • step S05 the light emitting element 61 is caused to emit light.
  • FIG. 6 is a timing chart for explaining an operation example of the display device 10.
  • FIG. 7 to 13 are circuit diagrams for explaining an operation example of the display device 10.
  • the display data Vdata generated by the image processing circuit 13 or the potential V0 is supplied to the wiring DL.
  • the wiring ML is supplied with the potential V0 or the potentials Ve1 to Ve4.
  • the wiring 51 is supplied with the potential Va
  • the wiring 52 is supplied with the potential Vc
  • the wiring 53 is supplied with the potential V1.
  • either the potential H or the potential L is supplied to each of the wiring GLa, the wiring GLb, and the wiring GLc.
  • the potential H is preferably higher than the potential L.
  • a “potential H” is a potential that is input to the gate of an n-channel transistor so that the transistor is turned on.
  • a “potential L” is a potential that is input to the gate of an n-channel transistor so that the transistor is turned off.
  • the potential Va is the anode potential and the potential Vc is the cathode potential.
  • the potential V1 is preferably higher than the potential V0.
  • the potential V1 may be applied to the back gate of the transistor M2 so that the threshold voltage can be negatively shifted until the transistor M2 is normally on.
  • the potential V0 may be a potential that can turn off the transistor M2 by being applied to the gate of the transistor M2.
  • the potential V0 can be 0V or the potential L.
  • the potential H is preferably higher than the potential V1.
  • the light emission intensity of the light emitting element 61 included in the pixel 11 is controlled by the magnitude of the current Ie (see FIG. 13) flowing through the light emitting element 61 .
  • the pixel 11 has a function of controlling the magnitude of the current Ie according to the display data Vdata supplied from the image processing circuit 13 through the wiring DL.
  • a symbol indicating a potential such as “H”, “L”, “V0”, or “V1” (also referred to as “potential symbol”) is written next to a terminal or a wiring.
  • a potential symbol attached to a terminal or wiring that has undergone a potential change may be indicated by enclosing characters.
  • an "x" symbol is added to an off-state transistor.
  • processing a series of operations in which a transistor is turned on or off, charge is supplied to a node electrically connected to the transistor, and the potential of the node is changed. , sometimes referred to as "processing".
  • step S01 a process for acquiring a voltage for correcting the threshold voltage of the transistor M2 and holding the voltage in the capacitor C2 is performed.
  • the current Ie flowing through the light emitting element 61 is mainly determined by the display data Vdata and the threshold voltage of the transistor M2. Therefore, even if the same display data Vdata is supplied to a plurality of pixels, if the threshold voltage of the transistor M2 included in each pixel is different, a different current Ie flows for each pixel. Therefore, the variation in the threshold voltage of the transistor M2 contributes to the deterioration of the display quality of the display device.
  • the threshold voltage of the transistor M2 by correcting the threshold voltage of the transistor M2 to the same value for each pixel, the variation in the current Ie can be reduced. Note that in this embodiment, as an example, a method of correcting the threshold voltage of the transistor M2 to 0 V by changing the potential applied to the back gate of the transistor M2 is described.
  • a reset operation is performed. Specifically, the potential H is supplied to the wirings GLb and GLc, and the potential L is supplied to the wiring GLa (see FIG. 7).
  • the transistor M3, the transistor M4, and the transistor M5 are turned on, and the transistor M1 and the transistor M6 are turned off.
  • the potential of the node ND1 is the potential Ve0. Furthermore, the potential of the node ND3 also becomes the potential Ve0 through the transistor M3. The potential Ve0 is higher than the potential Vc by the voltage drop in the light emitting element 61 . Further, the potential V1 is supplied to the node ND2 through the transistor M4. It is assumed that the transistor M2 is normally on by applying the potential V1 ⁇ the potential Ve0 as the back gate voltage of the transistor M2.
  • the potential L is supplied to the wiring GLc (see FIG. 8). Then, the transistor M5 is turned off.
  • the transistor M2 Since the back gate voltage of the transistor M2 is the potential V1-potential Ve0 immediately after the transistor M5 is turned off, the transistor M2 is normally on. Therefore, electric charge is supplied from the wiring 51 to the node ND1 through the transistor M2, so that the potential of the node ND1 increases over time. Also, since the transistor M3 is on, the potential of the node ND3 also rises. Here, as the potential of the node ND1 gradually increases, the back gate voltage of the transistor M2 gradually decreases. That is, the threshold voltage of the transistor M2 is gradually shifted positively. Ultimately, when the threshold voltage of the transistor M2 approaches 0 V infinitely, the transistor M2 is turned off, and the potential rise of the node ND1 stops. At this time, the back gate voltage at which the threshold voltage of the transistor M2 becomes 0 V is Vb. That is, when the potential increase of the node ND1 stops, the potential of the node ND1 becomes the potential V1-Vb.
  • the potential L is supplied to the wiring GLb (see FIG. 9). Then, the transistor M3 and the transistor M4 are turned off. Therefore, the node ND2 and the node ND3 are brought into a floating state, and the charge of each node is held. That is, the state in which Vb acquired in the period T12 is applied as the back gate voltage of the transistor M2 is maintained.
  • the threshold voltage of the transistor M2 can be corrected to 0 V and the corrected state can be maintained. Note that, in the present embodiment and the like, such a display device correction method may be referred to as “internal correction”.
  • step S02 the current flowing through the light emitting element 61 is measured by the monitor circuit 12, and processing for acquiring the current-voltage characteristics of the light emitting element 61 is performed.
  • the emission intensity of the light emitting element 61 is determined by the current Ie flowing through the light emitting element 61 . Moreover, the current Ie flowing through the light emitting element 61 is determined by the potential difference (voltage) between the anode terminal and the cathode terminal of the light emitting element 61 . In addition, the characteristics of the light emitting element 61 for each pixel may vary, or deteriorate over time, for example. Therefore, even if the threshold voltage of the drive transistor is corrected as described above, the final light emission intensity of the light emitting element 61 may vary, and the display quality of the display device may deteriorate, such as display unevenness.
  • the display quality of the display device due to the characteristic variation or characteristic deterioration of the light-emitting element 61 can be improved. can be reduced.
  • a potential Ve1 is supplied from the monitor circuit 12 to the wiring ML.
  • the potential Ve1 is preferably higher than the potential V0.
  • the potential Ve1 is supplied to the anode terminal of the light emitting element 61 via the transistors M6 and M5.
  • a voltage (potential Ve1 ⁇ potential Vc) is applied across the light emitting element 61 (between the anode terminal and the cathode terminal), and a current Ie1 corresponding to the applied voltage flows through the light emitting element 61 .
  • a current Ie1 flows from the monitor circuit 12 to the light emitting element 61 via the wiring ML, the transistor M6, the node ND1, and the transistor M5. Therefore, the monitor circuit 12 can measure the current Ie1. In other words, it is possible to obtain the current Ie1 that flows when the voltage (potential Ve1 ⁇ potential Vc) is applied across the light emitting element 61 .
  • the potential Ve2 is supplied from the monitor circuit 12 to the wiring ML while the potentials of the wiring GLa, the wiring GLb, the wiring GLc, and the wiring DL are maintained. Then, similarly to the period T21, the current Ie2 that flows when the voltage (potential Ve2 ⁇ potential Vc) is applied to both ends of the light emitting element 61 can be obtained. Similarly, by supplying the potential Ve3 to the wiring ML in the period T23, the current Ie3 that flows when the voltage of the potential Ve3 - the potential Vc is applied to both ends of the light emitting element 61 can be obtained.
  • the transistor M1, the transistor M5, and the transistor M6 are turned off by supplying the potential L to the wirings GLa and GLc after the period T24 ends.
  • the currents Ie1 to Ie4 flowing through the light emitting element 61 can be measured when the potentials Ve1 to Ve4 are supplied to the anode terminal of the light emitting element 61, respectively. That is, the current-voltage characteristics of the light emitting element 61 can be acquired.
  • a pair of a voltage value applied across the light emitting element 61 and a corresponding current value flowing through the light emitting element 61 is regarded as one piece of characteristic data
  • four pieces of characteristic data are acquired. Although one example is shown, it is not limited to this.
  • the number of pieces of characteristic data to be acquired may be two, three, or five or more. Acquiring a larger number of pieces of characteristic data makes it possible to acquire more accurate current-voltage characteristics of the light emitting element 61 .
  • step S03 the current-voltage characteristics of the light emitting element 61 obtained in step S02 are used to correct the image data and generate display data Vdata.
  • the current-voltage characteristics of the light emitting element 61 may be obtained for each pixel, and the image data may be corrected so as to cancel the variations.
  • the current-voltage characteristics of the light emitting element 61 can be used to correct the image data. Note that in the present embodiment and the like, such a display device correction method may be referred to as “external correction”.
  • the present invention is not limited to this.
  • the characteristics of the driving transistor may be acquired to correct the image data, or the characteristics of both the light emitting element 61 and the driving transistor may be acquired to correct the image data.
  • step S04 processing for writing display data Vdata to the pixels 11 is performed.
  • the potential H is supplied to the wiring GLa, and the potential L is supplied to the wirings GLb and GLc (see FIG. 11). Then, the transistor M1 is turned on, and the display data Vdata is supplied to the node ND3. Further, the transistor M6 is turned on, and the potential V0 is supplied to the node ND1. That is, the display data Vdata-potential V0 is applied to the gate voltage of the transistor M2.
  • the potential of the node ND1 and the node ND2 are capacitively coupled through the capacitor C2, when the potential of the node ND1 changes to the potential V0, the potential of the node ND2 also changes to the potential V0+Vb. That is, Vb is applied to the back gate voltage of the transistor M2, and the display data Vdata can be written while maintaining the state in which the threshold voltage of the transistor M2 is corrected to 0V.
  • the potential L is supplied to the wiring GLa (see FIG. 12). Then, the transistor M1 is turned off, and the node ND3 becomes floating. Further, the transistor M6 is turned off, and charge is supplied from the wiring 51 to the node ND1 through the transistor M2, so that the potential of the node ND1 gradually increases.
  • the node ND3 is in a floating state, and the nodes ND1 and ND3 are capacitively coupled via the capacitor C1. Therefore, the potential of the node ND3 also rises following the potential rise of the node ND1. That is, the gate voltage of the transistor M2 is maintained at display data Vdata-potential V0.
  • node ND2 is in a floating state, and nodes ND1 and ND2 are capacitively coupled via capacitor C2. Therefore, the potential of the node ND2 also rises following the potential rise of the node ND1. That is, the back gate voltage of the transistor M2 is maintained at Vb.
  • the potential H is supplied to the wiring GLc (see FIG. 13). Then, the transistor M5 is turned on, and current flows from the wiring 51 to the wiring 52 . That is, the current Ie flows through the light emitting element 61, and the light emitting element 61 emits light with an emission intensity corresponding to the current Ie.
  • the potential of the node ND1 changes.
  • the node ND2 and the node ND3 are in the floating state as in the period T32 described above. Therefore, the gate voltage of the transistor M2 is maintained at display data Vdata-potential V0, and the back gate voltage of the transistor M2 is maintained at Vb.
  • the current Ie is determined by the gate voltage and back gate voltage of the transistor M2. That is, the current Ie has a value proportional to the square of (“the gate voltage of the transistor M2” ⁇ “the threshold voltage of the transistor M2”). A state in which display data Vdata-potential V0 is applied as the gate voltage of the transistor M2 is maintained. Further, the state in which Vb is applied as the back gate voltage of the transistor M2 is maintained. In other words, the state in which the threshold voltage of the transistor M2 is corrected to 0V is maintained. That is, the current Ie has a value proportional to the square of (display data Vdata-potential V0), and the state in which the amount of current flows regardless of the threshold voltage of the transistor M2 is maintained.
  • the display quality of the display device 10 is improved by correcting the threshold voltage of the transistor M2 by internal correction and correcting the current-voltage characteristics of the light emitting element 61 by external correction. be able to.
  • the method for correcting the display device of one embodiment of the present invention is not limited to the above description.
  • the threshold voltage of the drive transistor is corrected in step S01 and the image data is corrected in step S03 before starting the writing of display data in step S04. Both should be finished.
  • FIG. 14 is a flowchart illustrating another example of the correction method for the display device 10.
  • FIG. The display device correction method shown in FIG. 14 differs from the display device correction method shown in FIG. 5 in the order in which steps S01 to S05 are executed.
  • step S02 is started.
  • step S01 and step S03 are started.
  • step S04 is started.
  • step S05 is started. Note that the above description can be referred to for the operation of the display device 10 in each of steps S01 to S05.
  • step S01 is processing in the pixel 11, and step S03 is processing in the image processing circuit 13.
  • FIG. 15 is a block diagram illustrating an example of a structure of a display device 10 according to one embodiment of the present invention.
  • the components are classified by function and shown as independent blocks, but it is difficult to completely separate the actual components by function, and one component is related to multiple functions. It is possible.
  • a display device 10 shown in FIG. 15 includes a panel 25 having a plurality of pixels 11 in a pixel portion 24, a controller 26, a CPU 27, an image processing circuit 13, an image memory 28, a memory 29, a monitor circuit 12, have Further, the display device 10 shown in FIG. 15 has a driver circuit 30 and a driver circuit 31 in the panel 25 .
  • the CPU 27 comprehensively controls the operation of various circuits included in the display device 10 to decode commands input from the outside or commands stored in the memory provided in the CPU 27 and execute the commands. It has the function to
  • the monitor circuit 12 has a function of supplying an arbitrary potential to the pixel 11 and measuring the current flowing through the pixel 11 at that time. It also has a function of generating arbitrary data (for example, current-voltage characteristics of the light emitting element 61) based on the measured current.
  • the memory 29 has a function of storing information contained in the signal. Note that the memory 29 may be, for example, a volatile memory such as a DRAM or SRAM, or a non-volatile memory such as a flash memory, MRAM, magnetic memory, magnetic disk, or magneto-optical disk. of memory may be used. For example, by using a non-volatile memory as the memory 29, information of each pixel can be stored even after power supply is stopped.
  • the operation of measuring the current flowing through the pixel 11 can be made unnecessary all the time. For example, before shipping the product, immediately before stopping the supply of power, or immediately after starting the supply of power, the operation of measuring the current flowing through the pixels 11 is performed, and the information is stored in the memory 29. can be done.
  • the image memory 28 has a function of storing the image data 32 input to the display device 10 .
  • FIG. 15 illustrates a case where only one image memory 28 is provided in the display device 10 , but a plurality of image memories 28 may be provided in the display device 10 .
  • three image memories 28 corresponding to each of the three image data 32 are provided. may be provided.
  • a memory circuit such as a DRAM (Dynamic Random Access Memory) or an SRAM (Static Random Access Memory) can be used.
  • a VRAM Video RAM
  • a memory circuit such as a DRAM (Dynamic Random Access Memory) or an SRAM (Static Random Access Memory) can be used.
  • a VRAM Video RAM
  • the image processing circuit 13 has a function of writing the image data 32 to the image memory 28 and reading the image data 32 from the image memory 28 in accordance with commands from the CPU 27, and generating display data Vdata from the image data 32.
  • the image processing circuit 13 has a function of reading out information stored in the memory 29 according to a command from the CPU 27 and correcting the image data using the information.
  • the memory 29 stores arbitrary data generated in the monitor circuit 12 (for example, current-voltage characteristics of the light emitting element 61). That is, for example, the current-voltage characteristics of the light emitting element 61 can be used to correct the image data 32 .
  • the controller 26 has a function of applying signal processing to the display data Vdata according to the specifications of the panel 25 and then supplying the display data Vdata to the panel 25 when the display data Vdata having image information is input.
  • the drive circuit 31 has a function of selecting the plurality of pixels 11 included in the pixel section 24 for each row.
  • the drive circuit 30 also has a function of supplying the display data Vdata given from the controller 26 to the pixels 11 in the row selected by the drive circuit 31 .
  • the controller 26 has a function of supplying the panel 25 with various drive signals used for driving the drive circuit 30 or the drive circuit 31, for example.
  • the drive signals include, for example, a start pulse signal SSP that controls the operation of the drive circuit 30, a clock signal SCK, a latch signal LP, a start pulse signal GSP that controls the operation of the drive circuit 31, and a clock signal GCK.
  • the display device 10 may have an input device having a function of giving information or instructions to the CPU 27 of the display device 10, for example.
  • an input device for example, a keyboard, pointing device, touch panel, sensor, or the like can be used.
  • Embodiment 2 In this embodiment, a structural example of a display device to which the method for correcting a display device of one embodiment of the present invention can be applied will be described.
  • the display device exemplified below can be applied to, for example, the pixel 11 or the like of Embodiment 1 above.
  • One embodiment of the present invention is a display device including a light-emitting element (also referred to as a light-emitting device).
  • a display device has two or more light-emitting elements that emit light of different colors. Each light emitting element has a pair of electrodes and an EL layer therebetween.
  • the light-emitting element is preferably an organic EL element (organic electroluminescence element). Two or more light-emitting elements that emit different colors each have an EL layer containing different light-emitting materials.
  • a full-color display device can be realized by including three types of light-emitting elements that emit red (R), green (G), or blue (B) light.
  • a display device having a plurality of light-emitting elements with different emission colors When a display device having a plurality of light-emitting elements with different emission colors is manufactured, at least layers containing light-emitting materials with different emission colors (light-emitting layers) need to be formed in the shape of islands.
  • a method of forming an island-shaped organic film by a vapor deposition method using a shadow mask such as a metal mask is known.
  • this method there are various influences such as precision of the metal mask, misalignment between the metal mask and the substrate, bending of the metal mask, and broadening of the contour of the film to be formed due to, for example, vapor scattering.
  • the shape and position of the island-like organic film deviate from the design, making it difficult to achieve high definition and high aperture ratio.
  • the layer profile may be blurred and the edge thickness may be reduced.
  • the thickness of the island-shaped light-emitting layer may vary depending on the location.
  • countermeasures have been taken to artificially increase definition (also called pixel density), for example, by adopting a special pixel arrangement method such as a pentile arrangement.
  • an island-shaped light-emitting layer means that the light-emitting layer is physically separated from an adjacent light-emitting layer.
  • the EL layer is processed into a fine pattern by photolithography without using a shadow mask such as a fine metal mask (FMM).
  • a shadow mask such as a fine metal mask (FMM).
  • FMM fine metal mask
  • the EL layers can be separately formed, a display device with extremely vivid, high contrast, and high display quality can be realized.
  • the EL layer may be processed into a fine pattern using both a metal mask and photolithography.
  • part or all of the EL layer can be physically separated. Accordingly, leakage current between light-emitting elements can be suppressed through a layer (also referred to as a common layer) used in common between adjacent light-emitting elements. Thereby, crosstalk due to unintended light emission can be prevented, and a display device with extremely high contrast can be realized. In particular, a display device with high current efficiency at low luminance can be realized.
  • One embodiment of the present invention can also be a display device in which a light-emitting element that emits white light and a color filter are combined.
  • light-emitting elements having the same structure can be applied to light-emitting elements provided in pixels (sub-pixels) that emit light of different colors, and all layers can be common layers. Further, part or all of each EL layer is divided by photolithography. As a result, leakage current through the common layer is suppressed, and a high-contrast display device can be realized.
  • a device having a tandem structure in which a plurality of light-emitting layers are stacked via a highly conductive intermediate layer, it is possible to effectively prevent leakage current through the intermediate layer, resulting in high brightness and high definition. , and high contrast.
  • an insulating layer covering at least the side surface of the island-shaped light emitting layer.
  • the insulating layer may cover part of the top surface of the island-shaped EL layer.
  • a material having barrier properties against water and oxygen is preferably used for the insulating layer.
  • an inorganic insulating film that hardly diffuses water or oxygen can be used. Accordingly, deterioration of the EL layer can be suppressed, and a highly reliable display device can be realized.
  • a common electrode or a common electrode and a common layer are formed to cover the recess, a phenomenon in which the common electrode is divided by a step at the end of the EL layer (also referred to as step disconnection) occurs.
  • common electrode may become insulated. Therefore, it is preferable to adopt a structure in which a local step located between two adjacent light emitting elements is filled with a resin layer functioning as a planarization film (also called LFP: Local Filling Planarization).
  • LFP Local Filling Planarization
  • FIG. 16A shows a schematic top view of the display device 100 of one embodiment of the present invention.
  • the display device 100 includes, on a substrate 101, a plurality of red light emitting elements 110R, green light emitting elements 110G, and blue light emitting elements 110B.
  • the light-emitting region of each light-emitting element is labeled with R, G, or B.
  • FIG. 16A for easy identification of each light-emitting element, the light-emitting region of each light-emitting element is labeled with R, G, or B.
  • the light emitting elements 110R, 110G, and 110B are arranged in a matrix.
  • FIG. 16A shows a so-called stripe arrangement in which light emitting elements emitting light of the same color are arranged in one direction.
  • the arrangement method of the light emitting elements is not limited to this.
  • an arrangement method such as an S stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may be applied.
  • a pentile arrangement or a diamond arrangement may be applied. can also be used.
  • an OLED Organic Light Emitting Diode
  • a QLED Quadratum-dot Light Emitting Diode
  • Examples of light-emitting substances that EL devices have include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescence materials), inorganic compounds (such as quantum dot materials), and substances that exhibit thermally activated delayed fluorescence (heat activated delayed fluorescence (thermally activated delayed fluorescence: TADF) material).
  • connection electrode 111C electrically connected to the common electrode 113.
  • FIG. 111 C of connection electrodes are given the electric potential (for example, anode electric potential or cathode electric potential) for supplying to the common electrode 113.
  • FIG. The connection electrode 111C is provided outside the display area where the light emitting elements 110R are arranged, for example.
  • connection electrodes can be provided along the outer periphery of a display area.
  • it may be provided along one side of the periphery of the display area, or may be provided over two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C is, for example, strip-shaped (rectangular), L-shaped, U-shaped (square bracket-shaped), or quadrangular. can be done.
  • FIG. 16B and 16C are schematic cross-sectional views corresponding to dashed-dotted lines A1-A2 and dashed-dotted lines A3-A4 in FIG. 16A, respectively.
  • FIG. 16B shows a schematic cross-sectional view of the light emitting elements 110R, 110G, and 110B
  • FIG. 16C shows a schematic cross-sectional view of the connection portion 140 where the connection electrode 111C and the common electrode 113 are connected. ing.
  • the light emitting element 110R has a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113.
  • the light emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113.
  • the light emitting element 110B has a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113.
  • the common layer 114 and the common electrode 113 are commonly provided for the light emitting elements 110R, 110G, and 110B.
  • the organic layer 112R included in the light-emitting element 110R includes a light-emitting organic compound that emits light having an intensity in at least the red wavelength range.
  • the organic layer 112G included in the light-emitting element 110G includes a light-emitting organic compound that emits light having an intensity in at least the green wavelength range.
  • the organic layer 112B included in the light-emitting element 110B contains a light-emitting organic compound that emits light having an intensity in at least a blue wavelength range.
  • Each of the organic layer 112R, the organic layer 112G, and the organic layer 112B can also be called an EL layer and has at least a layer containing a light-emitting organic compound (light-emitting layer).
  • the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B may be referred to as the light-emitting element 110 when describing matters common to them.
  • constituent elements that are distinguished by alphabets such as the organic layer 112R, the organic layer 112G, and the organic layer 112B, for example, when describing items common to these elements, reference numerals omitting the alphabet will be used.
  • Organic layer 112 and common layer 114 can each independently comprise one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.
  • the organic layer 112 has a layered structure of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer in order from the pixel electrode 111 side
  • the common layer 114 has an electron injection layer. be able to.
  • a pixel electrode 111R, a pixel electrode 111G, and a pixel electrode 111B are provided for each light emitting element. Further, the common layer 114 and the common electrode 113 are provided as a continuous layer common to each light emitting element. Either the pixel electrode or the common electrode 113 is formed using a conductive film that transmits visible light, and the other is formed using a conductive film that is reflective. By making each pixel electrode translucent and the common electrode 113 reflective, a bottom emission display device can be obtained. On the contrary, by making each pixel electrode reflective and the common electrode 113 translucent, a top emission display device can be obtained. Note that by making both the pixel electrodes and the common electrode 113 transparent, a dual-emission display device can be obtained.
  • a protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 110R, 110G, and 110B.
  • the protective layer 121 has a function of preventing impurities such as water from diffusing into each light emitting element from above.
  • the end of the pixel electrode 111 preferably has a tapered shape.
  • the organic layer 112 provided along the side surface of the pixel electrode also has a tapered shape.
  • the side surface of the pixel electrode is tapered because foreign matter (eg, dust or particles) in the manufacturing process can be easily removed by a treatment such as cleaning.
  • a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface.
  • the organic layer 112 is processed into an island shape by photolithography. Therefore, the organic layer 112 has a shape in which the angle formed by the top surface and the side surface is close to 90 degrees at the end.
  • an organic film formed by using FMM (Fine Metal Mask), for example tends to gradually become thinner toward the edge, and the upper surface is sloped over a range of, for example, 1 ⁇ m or more and 10 ⁇ m or less. It is difficult to distinguish between the top surface and the side surface.
  • An insulating layer 125, a resin layer 126, and a layer 128 are provided between two adjacent light emitting elements.
  • the side surfaces of the organic layers 112 are provided to face each other with the resin layer 126 interposed therebetween.
  • the resin layer 126 is positioned between two adjacent light emitting elements and is provided so as to fill the end portions of the respective organic layers 112 and the area between the two organic layers 112 .
  • the resin layer 126 has a smooth convex upper surface, and a common layer 114 and a common electrode 113 are provided to cover the upper surface of the resin layer 126 .
  • the resin layer 126 functions as a planarizing film that fills the steps located between the two adjacent light emitting elements.
  • a phenomenon in which the common electrode 113 is divided by a step at the end of the organic layer 112 (also referred to as step disconnection) occurs, and the common electrode on the organic layer 112 is prevented from being insulated. be able to.
  • the resin layer 126 can also be called LFP (Local Filling Planarization).
  • an insulating layer containing an organic material can be preferably used.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.
  • a photosensitive resin can be used as the resin layer 126 .
  • a photoresist may be used as the photosensitive resin.
  • a positive material or a negative material can be used for the photosensitive resin.
  • the resin layer 126 may contain a material that absorbs visible light.
  • the resin layer 126 itself may be made of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light.
  • a resin that transmits red, blue, or green light and can be used as a color filter that absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix. , etc. can be used.
  • the insulating layer 125 is provided in contact with the side surface of the organic layer 112 . Also, the insulating layer 125 is provided to cover the upper end portion of the organic layer 112 . A portion of the insulating layer 125 is provided in contact with the upper surface of the substrate 101 .
  • the insulating layer 125 is positioned between the resin layer 126 and the organic layer 112 and functions as a protective film to prevent the resin layer 126 from contacting the organic layer 112 .
  • the organic layer 112 may be dissolved by an organic solvent or the like used when forming the resin layer 126 . Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126 as shown in this embodiment mode, the side surface of the organic layer can be protected.
  • the insulating layer 125 can be an insulating layer containing an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used, for example.
  • the insulating layer 125 may have a single-layer structure or a laminated structure.
  • oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, and neodymium oxide films.
  • nitride insulating film examples include a silicon nitride film and an aluminum nitride film.
  • the oxynitride insulating film examples include a silicon oxynitride film and an aluminum oxynitride film.
  • the oxynitride insulating film examples include a silicon oxynitride film and an aluminum oxynitride film.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. indicates
  • the insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like, for example.
  • the insulating layer 125 is preferably formed by an ALD method with good coverage.
  • a reflective film for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum
  • a reflective film is provided between the insulating layer 125 and the resin layer 126 so that A configuration may be adopted in which emitted light is reflected by the reflecting film.
  • the light extraction efficiency can be improved.
  • the layer 128 is part of a protective layer (also referred to as a mask layer or a sacrificial layer) for protecting the organic layer 112 when the organic layer 112 is etched.
  • a protective layer also referred to as a mask layer or a sacrificial layer
  • any of the materials that can be used for the insulating layer 125 can be used.
  • a metal oxide film such as an aluminum oxide film or a hafnium oxide film, or an inorganic insulating film such as a silicon oxide film, which is formed by the ALD method, has few pinholes, and thus has a function of protecting the EL layer. It is excellent and can be suitably used for the insulating layer 125 and the layer 128 .
  • a protective layer 121 is provided to cover the common electrode 113 .
  • the protective layer 121 can have, for example, a single-layer structure or a laminated structure including at least an inorganic insulating film.
  • the inorganic insulating film include an oxide film or a nitride film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, or a hafnium oxide film. mentioned.
  • protective layer 121 may be a semiconductor or conductive material such as, for example, indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide.
  • a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121 .
  • a structure in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable.
  • the organic insulating film functions as a planarizing film.
  • the upper surface of the organic insulating film can be flattened, so that the coverage of the inorganic insulating film thereon can be improved, and the barrier property can be enhanced.
  • the upper surface of the protective layer 121 is flat, when a structure (for example, a color filter, an electrode of a touch sensor, or a lens array) is provided above the protective layer 121, an uneven shape due to the structure below may be formed. This is preferable because it can reduce the impact.
  • a structure for example, a color filter, an electrode of a touch sensor, or a lens array
  • FIG. 16C shows a connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected.
  • the connecting portion 140 an opening is provided in the insulating layer 125 and the resin layer 126 above the connecting electrode 111C.
  • the connection electrode 111C and the common electrode 113 are electrically connected through the opening.
  • FIG. 16C shows the connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected. good too.
  • the electrical resistivity of the material used for the common layer 114 is sufficiently low and the thickness can be formed thin. Even if you do, there are often no problems. As a result, the common electrode 113 and the common layer 114 can be formed using the same shielding mask, so the manufacturing cost can be reduced.
  • FIG. 16A A pixel layout different from that in FIG. 16A will be mainly described below.
  • the arrangement of the light emitting elements (sub-pixels) is not particularly limited, and various methods can be applied.
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, polygons with rounded corners, ellipses, and circles.
  • the top surface shape of the sub-pixel corresponds to the top surface shape of the light emitting region of the light emitting element.
  • a pixel 150 shown in FIG. 17A is composed of three sub-pixels, a light-emitting element 110a, a light-emitting element 110b, and a light-emitting element 110c.
  • the light-emitting element 110a may be a light-emitting element that emits blue light
  • the light-emitting element 110b may be a light-emitting element that emits red light
  • the light-emitting element 110c may be a light-emitting element that emits green light.
  • the pixel 150 shown in FIG. 17B includes a light emitting element 110a having a substantially trapezoidal top surface shape with rounded corners, a light emitting element 110b having a substantially triangular top surface shape with rounded corners, and a substantially square or substantially hexagonal top surface shape with rounded corners. and a light emitting element 110c having Further, the light emitting element 110a has a larger light emitting area than the light emitting element 110b. Thus, the shape and size of each light emitting element can be determined independently. For example, a more reliable light-emitting element can be made smaller.
  • the light emitting element 110a may be a light emitting element emitting green light
  • the light emitting element 110b may be a light emitting element emitting red light
  • the light emitting element 110c may be a light emitting element emitting blue light.
  • FIG. 17C shows an example in which pixels 124a having light-emitting elements 110a and 110b and pixels 124b having light-emitting elements 110b and 110c are alternately arranged.
  • the light emitting element 110a may be a light emitting element emitting red light
  • the light emitting element 110b may be a light emitting element emitting green light
  • the light emitting element 110c may be a light emitting element emitting blue light.
  • a delta arrangement is applied to pixels 124a and 124b shown in FIGS. 17D and 17E.
  • the pixel 124a has two light emitting elements (light emitting element 110a and light emitting element 110b) in the upper row (first row) and one light emitting element (light emitting element 110c) in the lower row (second row).
  • the pixel 124b has one light emitting element (light emitting element 110c) in the upper row (first row) and two light emitting elements (light emitting element 110a and light emitting element 110b) in the lower row (second row).
  • the light emitting element 110a may be a light emitting element emitting red light
  • the light emitting element 110b may be a light emitting element emitting green light
  • the light emitting element 110c may be a light emitting element emitting blue light.
  • FIG. 17D is an example in which each light emitting element has a substantially square top surface shape with rounded corners
  • FIG. 17E is an example in which each light emitting element has a circular top surface shape.
  • FIG. 17F is an example in which light-emitting elements that emit light of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the upper sides of two light emitting elements (for example, light emitting elements 110a and 110b, or light emitting elements 110b and 110c) aligned in the column direction are displaced.
  • the light emitting element 110a may be a light emitting element emitting red light
  • the light emitting element 110b may be a light emitting element emitting green light
  • the light emitting element 110c may be a light emitting element emitting blue light.
  • the top surface shape of the light emitting element may be, for example, a polygonal shape with rounded corners, an elliptical shape, or a circular shape.
  • the EL layer is processed into an island shape using a resist mask.
  • the resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, curing of the resist film may be insufficient depending on the heat resistance temperature of the material of the EL layer and the curing temperature of the resist material.
  • a resist film that is insufficiently hardened may take a shape away from the desired shape during processing.
  • the top surface shape of the EL layer may be, for example, a polygon with rounded corners, an ellipse, or a circle. For example, when a resist mask having a square top surface is formed, a resist mask having a circular top surface is formed, and the EL layer may have a circular top surface.
  • a technique for correcting the mask pattern in advance so that the design pattern and the transfer pattern match.
  • OPC Optical Proximity Correction
  • a pattern for correction is added to a corner portion of a figure on a mask pattern.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • the display device of the present embodiment is, for example, a television device, a desktop or notebook personal computer, a computer monitor, a digital signage, or a relatively large game machine such as a pachinko machine.
  • electronic devices with screens for example, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smart phones, wristwatch terminals, tablet terminals, personal digital assistants, or sound reproduction devices. It can be used for parts.
  • Display device 400 18 shows a perspective view of the display device 400, and FIG. 19A shows a cross-sectional view of the display device 400. As shown in FIG.
  • the display device 400 has a structure in which a substrate 452 and a substrate 451 are bonded together.
  • the substrate 452 is clearly indicated by dashed lines.
  • the display device 400 includes, for example, a display portion 462, a circuit 464, wirings 465, and the like.
  • FIG. 18 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400 . Therefore, the configuration shown in FIG. 18 can also be called a display module including the display device 400, an IC (integrated circuit), and an FPC.
  • a scanning line driver circuit can be used.
  • the wiring 465 has a function of supplying signals and power to the display portion 462 and the circuit 464 .
  • the signal and power are input to the wiring 465 from the outside of the display device 400 via the FPC 472 or input to the wiring 465 from the IC 473 .
  • FIG. 18 shows an example in which an IC 473 is provided on a substrate 451 by, for example, a COG (Chip On Glass) method or a COF (Chip on Film) method.
  • a COG Chip On Glass
  • COF Chip on Film
  • the IC 473 for example, an IC having a scanning line driver circuit, a signal line driver circuit, or the like can be applied.
  • the display device 400 or the display module may be configured without an IC.
  • the IC may be mounted on the FPC by, for example, the COF method.
  • FIG. 19A shows an example of a cross section of the display device 400 when a portion of the region including the FPC 472, a portion of the circuit 464, a portion of the display portion 462, and a portion of the region including the connection portion are cut. indicates FIG. 19A shows an example of a cross section of the display portion 462, in particular, a region including the light emitting element 430b that emits green light and the light emitting element 430c that emits blue light.
  • a display device 400 illustrated in FIG. 19A includes, for example, the transistor 202, the transistor 210, the light-emitting elements 430b, 430c, and the like between the substrate 453 and the substrate 454.
  • FIG. 19A includes, for example, the transistor 202, the transistor 210, the light-emitting elements 430b, 430c, and the like between the substrate 453 and the substrate 454.
  • the light-emitting element exemplified in Embodiment 1 can be applied to the light-emitting elements 430b and 430c.
  • the three sub-pixels are red (R), green (G), and blue (B), for example. or a sub-pixel that emits three colors of yellow (Y), cyan (C), and magenta (M).
  • the four sub-pixels are sub-pixels that emit light of four colors of R, G, B, and white (W), or four sub-pixels of R, G, B, and Y. sub-pixels exhibiting colored light, and the like.
  • the substrate 454 and protective layer 416 are adhered via an adhesive layer 442 .
  • the adhesive layer 442 is provided so as to overlap each of the light emitting elements 430b and 430c, and the display device 400 has a solid sealing structure.
  • the light-emitting elements 430b and 430c each include a conductive layer 411a, a conductive layer 411b, and a conductive layer 411c as pixel electrodes.
  • the conductive layer 411b reflects visible light and functions as a reflective electrode.
  • the conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.
  • the conductive layer 411 a is connected to the conductive layer 222 b included in the transistor 210 through an opening provided in the insulating layer 214 .
  • the transistor 210 has a function of controlling driving of the light emitting element.
  • An EL layer 412G or an EL layer 412B is provided to cover the pixel electrode.
  • An insulating layer 421 is provided in contact with a side surface of the EL layer 412G and a side surface of the EL layer 412B, and a resin layer 422 is provided so as to fill recesses of the insulating layer 421.
  • FIG. A layer 424 is provided between the EL layer 412G and the insulating layer 421 and between the EL layer 412B and the insulating layer 421, respectively.
  • a common layer 414, a common electrode 413, and a protective layer 416 are provided to cover the EL layers 412G and 412B.
  • Light emitted by the light emitting element is emitted to the substrate 452 side.
  • a material having high visible light transmittance is preferably used for the substrate 452 .
  • Both the transistor 202 and the transistor 210 are formed over the substrate 451 . These transistors can be made with the same material and the same process.
  • the substrate 453 and the insulating layer 212 are bonded together by an adhesive layer 455 .
  • the display device 400 As a method for manufacturing the display device 400 , first, for example, a manufacturing substrate provided with the insulating layer 212 , each transistor, each light-emitting element, and the like, and the substrate 454 are bonded together with an adhesive layer 442 . Then, the formation substrate is peeled off and a substrate 453 is attached to the exposed surface, so that each component formed over the formation substrate is transferred to the substrate 453 .
  • Each of the substrates 453 and 454 preferably has flexibility. Thereby, the flexibility of the display device 400 can be enhanced.
  • an inorganic insulating film that can be used for the insulating layers 211 and 215 can be used.
  • a connection portion 204 is provided in a region of the substrate 453 where the substrate 454 does not overlap.
  • the wiring 465 is electrically connected to the FPC 472 through the conductive layer 466 and the connecting layer 242 .
  • the conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. Thereby, the connecting portion 204 and the FPC 472 can be electrically connected via the connecting layer 242 .
  • the transistor 202 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, and one of the pair of low-resistance regions 231n.
  • a conductive layer 222a connected to a pair of low-resistance regions 231n, a conductive layer 222b connected to the other of a pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223 have
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.
  • the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 215, respectively.
  • One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
  • FIG. 19A shows an example in which an insulating layer 225 covers the top and side surfaces of the semiconductor layer.
  • the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively.
  • the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n.
  • the structure shown in FIG. 19B can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
  • the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low resistance region 231n through openings in the insulating layer 215, respectively.
  • an insulating layer 218 covering the transistor 209 may be provided.
  • the structure of the transistor included in the display device of this embodiment there is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 202 and 210 .
  • a transistor may be driven by connecting two gates to the transistor and applying the same signal to the two gates.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • the crystallinity of the semiconductor material used for the semiconductor layer of the transistor is not particularly limited, either. semiconductors with crystalline regions) may be used. A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • the bandgap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more.
  • the metal oxide preferably comprises at least indium or zinc, more preferably indium and zinc.
  • metal oxides include indium and M (where M is gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium). , hafnium, tantalum, tungsten, magnesium, and cobalt) and zinc.
  • the semiconductor layer of the transistor may comprise silicon.
  • Silicon includes, for example, amorphous silicon or crystalline silicon (eg, low-temperature polysilicon, monocrystalline silicon, etc.).
  • the transistors included in the circuit 464 and the transistors included in the display portion 462 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 464 may all have the same structure, or may have two or more types.
  • the structures of the plurality of transistors included in the display portion 462 may all be the same, or may be two or more types.
  • the insulating layer can function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
  • Inorganic insulating films are preferably used for the insulating layers 211, 212, 215, 218, and 225, respectively.
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the inorganic insulating films described above may be laminated and used.
  • An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer.
  • materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, precursors of these resins, and the like. mentioned.
  • optical members can be placed along the inner or outer surface of substrate 454 .
  • optical members include a light shielding layer, a polarizing plate, a retardation plate, a light diffusion layer (for example, a diffusion film), an antireflection layer, a microlens array, or a light collecting film.
  • a light shielding layer for example, a polarizing plate, a retardation plate, a light diffusion layer (for example, a diffusion film), an antireflection layer, a microlens array, or a light collecting film.
  • an antistatic film that suppresses adhesion of dust
  • a water-repellent film that suppresses adhesion of dirt
  • a hard coat film that suppresses the occurrence of scratches due to use
  • a shock absorbing layer etc.
  • the protective layer 416 that covers the light-emitting element By providing the protective layer 416 that covers the light-emitting element, it is possible to prevent impurities such as water from entering the light-emitting element and improve the reliability of the light-emitting element.
  • connection 228 is shown in FIG. 19A.
  • the connecting portion 228, the common electrode 413 and the wiring are electrically connected.
  • FIG. 19A shows an example in which the wiring has the same laminated structure as that of the pixel electrode.
  • the substrates 453 and 454 for example, glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like can be used.
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting element is extracted.
  • the flexibility of the display device can be increased.
  • a polarizing plate may be used as the substrate 453 or the substrate 454 .
  • the substrate 453 and the substrate 454 for example, polyethylene terephthalate (PET), polyester resin such as polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, and polycarbonate (PC) resin, respectively.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PC polycarbonate
  • PES polyethersulfone
  • PAS polyamide resin
  • polysiloxane resin e.g., nylon or aramid
  • polysiloxane resin cycloolefin resin
  • polystyrene resin polyamideimide resin
  • polyurethane resin polyvinyl chloride resin
  • polyvinylidene chloride resin polypropylene Resin
  • PTFE polytetrafluoroethylene
  • ABS resin cellulose nanofiber, or the like
  • One or both of the substrates 453 and 454 may be made of glass having a thickness sufficient to be flexible.
  • various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used.
  • these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like. mentioned.
  • materials with low moisture permeability, such as epoxy resins are preferred.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • connection layer 242 for example, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • materials that can be used for conductive layers such as various wirings and electrodes that constitute display devices include, for example, aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, Examples include metals such as molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components. Films containing these materials can be used as single layers or laminated structures.
  • the light-transmitting conductive material for example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, a conductive oxide such as zinc oxide containing gallium, or graphene can be used.
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or alloy materials containing such metal materials can be used.
  • a nitride of the metal material eg, titanium nitride
  • it is preferably thin enough to have translucency.
  • a stacked film of any of the above materials can be used as the conductive layer.
  • a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased.
  • conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.
  • Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. be done.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • a device manufactured using a metal mask or FMM fine metal mask or high-definition metal mask
  • a device with an MM (metal mask) structure is sometimes referred to as a device with an MML (metal maskless) structure.
  • a light-emitting device that emits light of each color has a structure in which light-emitting layers are separately formed or a structure in which light-emitting layers are separately painted. is sometimes called an SBS (Side By Side) structure.
  • SBS Side By Side
  • a light-emitting device capable of emitting white light is sometimes referred to as a white light-emitting device.
  • a white light emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.
  • Light-emitting devices can be broadly classified into single structures and tandem structures.
  • a single structure device has one light emitting unit between a pair of electrodes.
  • the light-emitting unit is configured to include one or more light-emitting layers.
  • the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light.
  • the light-emitting device as a whole may emit white light by combining the colors of light emitted by the three or more light-emitting layers.
  • a tandem structure device has a plurality of light emitting units between a pair of electrodes.
  • Each light-emitting unit is configured to include one or more light-emitting layers.
  • luminance per predetermined current can be increased, and a light-emitting device with higher reliability than a single structure can be obtained.
  • the light emitting device having the SBS structure can consume less power than the white light emitting device.
  • the manufacturing process of the white light emitting device is simpler than that of the SBS structure light emitting device, so that the manufacturing cost can be lowered and the manufacturing yield can be increased.
  • the light emitting device has an EL layer 790 between a pair of electrodes (lower electrode 791 and upper electrode 792).
  • EL layer 790 can be composed of multiple layers, such as layer 720 , emissive layer 711 , and layer 730 , for example.
  • the layer 720 can have, for example, a layer containing a highly electron-injecting substance (electron-injecting layer), a layer containing a highly electron-transporting substance (electron-transporting layer), and the like.
  • the light-emitting layer 711 has, for example, a light-emitting compound.
  • Layer 730 can have, for example, a layer containing a substance with high hole-injection properties (hole-injection layer) and a layer containing a substance with high hole-transport properties (hole-transport layer).
  • a structure having layer 720, light-emitting layer 711, and layer 730 provided between a pair of electrodes can function as a single light-emitting unit.
  • the configuration of FIG. 20A is called a single configuration.
  • the light emitting device shown in FIG. 20B has layers 730 - 1 , 730 - 2 , light emitting layer 711 , layers 720 - 1 , 720 - 2 and top electrode 792 on bottom electrode 791 .
  • the lower electrode 791 is the anode and the upper electrode 792 is the cathode.
  • the layer 730-1 functions as a hole injection layer
  • the layer 730-2 functions as a hole transport layer
  • the layer 720-1 functions as an electron transport layer
  • the layer 720-2 functions as an electron injection layer.
  • the layer 730-1 is an electron injection layer
  • the layer 730-2 is an electron transport layer
  • the layer 720-1 is a hole transport layer
  • the layer 720-2 is Each functions as a hole injection layer.
  • a configuration in which a plurality of light-emitting layers (light-emitting layers 711, 712, and 713) are provided between layers 720 and 730 is also a variation of the single structure. be.
  • tandem structure a structure in which a plurality of light-emitting units (EL layers 790a and 790b) are connected in series via an intermediate layer (charge generation layer) 740 is referred to as a tandem structure in this specification.
  • a tandem structure may be called a stack structure. Note that the tandem structure enables a light-emitting device capable of emitting light with high luminance.
  • the light-emitting layer 711, the light-emitting layer 712, and the light-emitting layer 713 may be made of a light-emitting material that emits light of the same color, or even the same light-emitting material. By stacking light-emitting layers, luminance can be increased.
  • different light-emitting materials may be used for the light-emitting layers 711 , 712 , and 713 .
  • a light-emitting material that emits white light by combining the colors of light emitted from the light-emitting layers 711, 712, and 713 may be used.
  • FIG. 20D shows an example in which a colored layer 795 functioning as a color filter is provided. A desired color of light can be obtained by passing the white light through the color filter.
  • a light-emitting material that emits light of the same color may be used for the light-emitting layer 711 and the light-emitting layer 712 .
  • light-emitting materials that emit light of different colors may be used for the light-emitting layers 711 and 712 .
  • the color of light emitted from the light-emitting layer 711 and the color of light emitted from the light-emitting layer 712 are complementary colors, white light emission is obtained.
  • FIG. 20F shows an example in which a colored layer 795 is further provided.
  • the layer 720 and the layer 730 may have a laminated structure of two or more layers as shown in FIG. 20B.
  • light-emitting materials that emit light of the same color may be used for the light-emitting layers 711, 712, and 713.
  • the light-emitting layer 711 and the light-emitting layer 712 may be made of a light-emitting material that emits light of the same color.
  • a color conversion layer instead of the coloring layer 795, light of a desired color different from the color of light emitted by the light-emitting material can be obtained.
  • a light-emitting material that emits blue light in each light-emitting layer and allowing the blue light to pass through the color conversion layer, it is possible to obtain light with a longer wavelength than blue (for example, red or green).
  • the color conversion layer for example, a fluorescent material, a phosphorescent material, quantum dots, or the like can be used.
  • the emission color of the light emitting device can be, for example, red, green, blue, cyan, magenta, yellow, or white, depending on the material that composes the EL layer 790 . Moreover, the color purity can be further enhanced by providing the light-emitting device with a microcavity structure.
  • a light-emitting device that emits white light may have a structure in which a light-emitting layer contains two or more kinds of light-emitting substances, or two or more light-emitting layers containing different light-emitting substances may be stacked. At this time, a light-emitting substance may be selected so that the light-emitting device as a whole can emit white light by combining the colors of light emitted by the light-emitting substances.
  • a light-emitting device has at least a light-emitting layer.
  • layers other than the light-emitting layer include, for example, a substance with high hole-injection property, a substance with high hole-transport property, a hole-blocking material, a substance with high electron-transport property, an electron-blocking material, and an electron-injecting substance.
  • a layer containing a substance with a high electron-blocking property, an electron-blocking material, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like may be further included.
  • the light-emitting device may contain an inorganic compound.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • a light emitting device can be configured with one or more layers of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.
  • the hole-injecting layer is a layer that injects holes from the anode to the hole-transporting layer, and contains a material with high hole-injecting properties.
  • Materials with high hole-injection properties include, for example, aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • Examples of hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and the like. Highly transportable materials are preferred.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives and triazoles.
  • a material having a high electron-transport property such as a ⁇ -electron-deficient heteroaromatic compound containing a compound can be used.
  • the electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • the electron injection layer examples include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), 8-(quinolinolato)lithium (abbreviation: Liq), 2- (2-pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenoratritium (abbreviation: LiPPy) LiPPP), lithium oxide (LiO x ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used.
  • the electron injection layer may have a laminated structure of two or more layers. As the laminated structure, for example, lithium fluoride can be used for the first layer and ytterbium can be used for the second layer.
  • a material having an electron transport property may be used for the electron injection layer.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as an electron-transporting material.
  • a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, or pyridazine ring), and a triazine ring can be used.
  • the lowest unoccupied molecular orbital (LUMO) level of the organic compound having an unshared electron pair is preferably ⁇ 3.6 eV or more and ⁇ 2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoelectron spectroscopy the highest occupied molecular orbital (HOMO) level of an organic compound and LUMO levels can be estimated.
  • Examples of organic compounds having a lone pair of electrons include 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1, 10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA), or 2,4,6-tris[3′-(pyridine-3- yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), and the like can be used.
  • NBPhen has a higher glass transition point (Tg) than BPhen, and has excellent heat resistance.
  • a light-emitting layer is a layer containing a light-emitting substance.
  • the emissive layer can have one or more emissive materials.
  • the light-emitting substance for example, a substance that emits blue, purple, blue-violet, green, yellow-green, yellow, orange, or red light is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, quantum dot materials, and the like.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. mentioned.
  • Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
  • organometallic complexes especially iridium complexes
  • platinum complexes, rare earth metal complexes, etc. which serve as ligands, may be mentioned.
  • the light-emitting layer may contain one or more organic compounds (eg, host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • one or both of a hole-transporting material and an electron-transporting material can be used as the one or more organic compounds.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low voltage driving, and long life of the light emitting device can be realized at the same time.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • a display device can be applied to a display portion of an electronic device. Therefore, according to one embodiment of the present invention, an electronic device with high display quality can be realized. Alternatively, according to one embodiment of the present invention, an extremely high-definition electronic device can be realized. Alternatively, according to one embodiment of the present invention, a highly reliable electronic device can be realized.
  • Examples of electronic devices using the display device according to one aspect of the present invention include display devices such as televisions and monitors, lighting devices, desktop or notebook personal computers, word processors, DVDs (Digital Versatile Disc), and the like.
  • Image reproducing device for reproducing still images or moving images stored in recording media, portable CD players, radios, tape recorders, headphone stereos, stereos, table clocks, wall clocks, cordless telephone extensions, transceivers, car phones, mobile phones, mobile phones Information terminals, tablet terminals, portable game machines, stationary game machines such as pachinko machines, calculators, electronic notebooks, electronic book terminals, electronic translators, voice input devices, video cameras, digital still cameras, electric shavers, microwave ovens High-frequency heating equipment, electric rice cookers, electric washing machines, electric vacuum cleaners, water heaters, fans, hair dryers, air conditioners, humidifiers, dehumidifiers and other air conditioning equipment, dishwashers, dish dryers, clothes dryers , futon dryers, electric refrigerators, electric freezers, electric refrigerator-
  • a mobile object propelled by an engine using fuel or an electric motor using electric power from a power storage unit may also be included in the category of electronic equipment.
  • the moving body include an electric vehicle (EV), a hybrid vehicle (HV) having both an internal combustion engine and an electric motor, a plug-in hybrid vehicle (PHV), a tracked vehicle in which the tires and wheels are changed to endless tracks, and an electric vehicle.
  • EV electric vehicle
  • HV hybrid vehicle
  • PSV plug-in hybrid vehicle
  • a tracked vehicle in which the tires and wheels are changed to endless tracks and an electric vehicle.
  • motorized bicycles including assisted bicycles, motorcycles, electric wheelchairs, golf carts, small or large ships, submarines, helicopters, aircraft, rockets, artificial satellites, space probes, planetary probes, or spacecraft.
  • An electronic device may include a secondary battery (battery). Furthermore, it is preferable that the secondary battery can be charged using contactless power transmission.
  • Secondary batteries include, for example, lithium-ion secondary batteries, nickel-hydrogen batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, and silver-zinc batteries.
  • An electronic device may have an antenna. Images, information, and the like can be displayed on the display portion by receiving signals with the antenna. Also, if the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.
  • An electronic device includes a sensor (for example, force, displacement, position, speed, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field , current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, infrared, etc.).
  • a sensor for example, force, displacement, position, speed, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field , current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, infrared, etc.
  • An electronic device can have various functions. For example, functions to display various information (e.g., still images, moving images, text images, etc.) on the display unit, touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs) , a wireless communication function, or a function of reading programs or data recorded on a recording medium.
  • various information e.g., still images, moving images, text images, etc.
  • touch panel functions e.g., touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs) , a wireless communication function, or a function of reading programs or data recorded on a recording medium.
  • an electronic device having a plurality of display units a function of mainly displaying image information on a part of the display unit and mainly displaying character information on another part, or an image with parallax consideration on the plurality of display units
  • a function of displaying a stereoscopic image in electronic devices with an image receiving unit, functions for shooting still images or moving images, functions for automatically or manually correcting captured images, and functions for saving captured images to a recording medium (external or internal to the electronic device). , or a function of displaying a captured image on a display portion.
  • the functions of the electronic device according to one embodiment of the present invention are not limited to these.
  • An electronic device according to one embodiment of the present invention can have various functions.
  • a display device can display a high-definition image. Therefore, it can be suitably used particularly for portable electronic devices, wearable electronic devices (wearable devices), electronic book terminals, and the like. For example, it can be suitably used for xR equipment such as VR equipment or AR equipment.
  • FIG. 21A is a diagram showing the appearance of camera 8000 with finder 8100 attached.
  • a camera 8000 includes a housing 8001, a display portion 8002, operation buttons 8003, a shutter button 8004, and the like.
  • a detachable lens 8006 is attached to the camera 8000 . Note that the camera 8000 may be integrated with the lens 8006 and the housing.
  • the camera 8000 can capture an image by pressing the shutter button 8004 or by touching the display portion 8002 functioning as a touch panel.
  • the housing 8001 has a mount having electrodes, and can be connected to the finder 8100 as well as, for example, a strobe device.
  • a viewfinder 8100 includes a housing 8101, a display portion 8102, buttons 8103, and the like.
  • Housing 8101 is attached to camera 8000 by mounts that engage mounts of camera 8000 .
  • the viewfinder 8100 can display an image or the like received from the camera 8000 on the display unit 8102, for example.
  • the button 8103 has a function as, for example, a power button.
  • the display device can be applied to the display portion 8002 of the camera 8000 and the display portion 8102 of the viewfinder 8100.
  • the viewfinder 8100 may be built in the camera 8000. FIG.
  • FIG. 21B is a diagram showing the appearance of head mounted display 8200. As shown in FIG. 21B
  • the head mounted display 8200 has a mounting section 8201, a lens 8202, a main body 8203, a display section 8204, a cable 8205 and the like.
  • a battery 8206 is built in the mounting portion 8201 .
  • Cable 8205 has a function of supplying power from battery 8206 to main body 8203 .
  • the main body 8203 includes, for example, a wireless receiver, etc., and can display received video information on the display unit 8204 .
  • the main body 8203 is equipped with, for example, a camera, and information on the movement of the user's eyeballs or eyelids can be used as input means.
  • the mounting unit 8201 may have a function of recognizing the line of sight, for example, by providing a plurality of electrodes at positions where it touches the user and capable of detecting the current flowing along with the movement of the user's eyeballs. . Moreover, it may have a function of monitoring the user's pulse based on the current flowing through the electrode. Also, the mounting section 8201 may have various sensors such as a temperature sensor, a pressure sensor, or an acceleration sensor.
  • the head-mounted display 8200 has, for example, a function of displaying biological information of the user on the display unit 8204, or a function of changing an image displayed on the display unit 8204 according to the movement of the user's head. good too.
  • the display device according to one embodiment of the present invention can be applied to the display portion 8204 .
  • FIG. 21C to 21E are diagrams showing the appearance of the head mounted display 8300.
  • FIG. A head mounted display 8300 includes a housing 8301 , a display portion 8302 , a band-shaped fixture 8304 , and a pair of lenses 8305 .
  • the user can see the display on the display portion 8302 through the lens 8305 .
  • the head-mounted display 8300 is preferable, for example, when the display portion 8302 is arranged in a curved manner so that the user can feel a high presence. Further, for example, by viewing another image displayed in a different region of the display portion 8302 through the lens 8305, for example, three-dimensional display using parallax can be performed.
  • the configuration is not limited to the configuration in which one display portion 8302 is provided, and for example, two display portions 8302 may be provided and one display portion may be arranged for one eye of the user.
  • the display device according to one embodiment of the present invention can be applied to the display portion 8302 .
  • a display device according to one embodiment of the present invention can achieve extremely high definition. For example, even when the display is magnified using the lens 8305 as shown in FIG. 21E and viewed, the pixels are difficult for the user to view. In other words, the display portion 8302 can be used to allow the user to view highly realistic images.
  • FIG. 21F is a diagram showing the appearance of a goggle-type head mounted display 8400.
  • the head mounted display 8400 has a pair of housings 8401, a mounting section 8402, and a cushioning member 8403.
  • a display portion 8404 and a lens 8405 are provided in the pair of housings 8401, respectively.
  • the pair of display portions 8404 can perform three-dimensional display using parallax by displaying different images.
  • a user can view the display on the display portion 8404 through the lens 8405 .
  • the lens 8405 has a focus adjustment mechanism, and its position can be adjusted according to the user's visual acuity.
  • the display portion 8404 is preferably square or horizontally long rectangular. This makes it possible to enhance the sense of reality.
  • the mounting portion 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off. Moreover, it is preferable that a part of the mounting portion 8402 has a vibration mechanism that functions as, for example, bone conduction earphones. As a result, you can enjoy video and audio just by wearing the device without the need for a separate audio device such as earphones or speakers.
  • the housing 8401 may have a function of outputting audio data by wireless communication, for example.
  • Mounting portion 8402 and cushioning member 8403 are portions that come into contact with the user's face (forehead, cheeks, etc.). Since the cushioning member 8403 is in close contact with the user's face, it is possible to prevent light leakage and enhance the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that the cushioning member 8403 comes into close contact with the user's face when the head mounted display 8400 is worn by the user. For example, materials such as rubber, silicone rubber, urethane, or sponge can be used.
  • a gap is less likely to occur between the user's face and the cushioning member 8403, and light leakage can be favorably prevented. can be prevented.
  • the use of such a material is preferable because, in addition to being pleasant to the touch, the user does not feel cold when worn in the cold season.
  • a member that touches the user's skin, such as the cushioning member 8403 or the mounting portion 8402, is preferably detachable for easy cleaning or replacement.
  • FIG. 22A is a diagram showing an example of a television device.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device according to one embodiment of the present invention can be applied to the display portion 7000.
  • FIG. 22A the display device according to one embodiment of the present invention can be applied to the display portion 7000.
  • a television apparatus 7100 shown in FIG. 22A can be operated by an operation switch included in a housing 7101 or a separate remote controller 7111 .
  • the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display section for displaying information output from the remote controller 7111 .
  • the television device 7100 can operate the channel or the volume using operation keys or a touch panel included in the remote controller 7111 .
  • an image displayed on the display portion 7000 can be operated.
  • the television device 7100 can be configured to include, for example, a receiver and a modem.
  • the receiver can receive general television broadcasts.
  • a modem by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (for example, between the sender and the receiver, or between the receivers, etc.) information communication
  • one-way from the sender to the receiver
  • two-way for example, between the sender and the receiver, or between the receivers, etc.
  • FIG. 22B is a diagram showing an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device according to one embodiment of the present invention can be applied to the display portion 7000.
  • FIG. 22B the display device according to one embodiment of the present invention can be applied to the display portion 7000.
  • 22C and 22D are diagrams showing an example of digital signage.
  • a digital signage 7300 illustrated in FIG. 22C includes a housing 7301, a display portion 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, or the like.
  • FIG. 22D shows a digital signage mounted on a cylindrical post.
  • a digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device according to one embodiment of the present invention can be applied to the display portion 7000.
  • FIG. 22C and 22D the display device according to one embodiment of the present invention can be applied to the display portion 7000.
  • the digital signage 7300 or the digital signage 7400 can increase the amount of information that can be provided at one time as the display unit 7000 is wider.
  • the wider the display unit 7000 the more conspicuous it is, and the more effective the advertisement can be, for example.
  • the digital signage 7300 or the digital signage 7400 apply a touch panel to the display unit 7000 . Accordingly, not only can an image or moving image be displayed on the display unit 7000, but also the user can intuitively operate. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or information terminal 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operating means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • FIG. 22E is a diagram illustrating an example of an information terminal;
  • An information terminal 7550 includes a housing 7551, a display portion 7552, a microphone 7557, a speaker portion 7554, a camera 7553, operation switches 7555, and the like.
  • the display device of one embodiment of the present invention can be applied to the display portion 7552 .
  • the display portion 7552 can function as a touch panel.
  • the information terminal 7550 can include an antenna, a battery, and the like inside the housing 7551 .
  • the information terminal 7550 can be used as, for example, a smartphone, a mobile phone, a tablet information terminal, a tablet personal computer, an e-book reader, or the like.
  • FIG. 22F is a diagram showing an example of a wristwatch-type information terminal.
  • An information terminal 7660 includes a housing 7661, a display portion 7662, a band 7663, a buckle 7664, an operation switch 7665, an input/output terminal 7666, and the like.
  • the information terminal 7660 can include, for example, an antenna, a battery, and the like inside the housing 7661 .
  • Information terminal 7660 can run a variety of applications such as, for example, mobile telephony, e-mail, text viewing and composition, music playback, Internet communication, or computer games.
  • the information terminal 7660 includes a touch sensor in the display portion 7662, and can be operated by touching the screen with a finger, a stylus, or the like, for example. For example, by touching an icon 7667 displayed on the display portion 7662, the application can be activated.
  • the operation switch 7665 has various functions such as, for example, time setting, power on/off operation, wireless communication on/off operation, manner mode execution/cancellation, power saving mode execution/cancellation, etc. be able to.
  • the operating system installed in the information terminal 7660 can set the function of the operation switch 7665 .
  • the information terminal 7660 is capable of performing short-range wireless communication that conforms to communication standards. For example, a hands-free call can be made by intercommunicating with a headset capable of wireless communication.
  • the information terminal 7660 can transmit and receive data to and from other information terminals via an input/output terminal 7666 . Also, charging can be performed through the input/output terminal 7666 . Note that the charging operation may be performed by wireless power supply without using the input/output terminal 7666 .
  • FIG. 23A is a diagram showing the appearance of automobile 9700.
  • FIG. 23B is a diagram showing the driver's seat of automobile 9700.
  • FIG. An automobile 9700 includes a vehicle body 9701, wheels 9702, a dashboard 9703, lights 9704, and the like.
  • the display device according to one embodiment of the present invention can be used for the display portion of the automobile 9700, for example.
  • the display device of one embodiment of the present invention can be applied to each of the display portions 9710 to 9715 illustrated in FIG. 23B.
  • a display portion 9710 and a display portion 9711 are display devices provided on the windshield of an automobile.
  • a display device according to one embodiment of the present invention can be a so-called see-through display device in which the opposite side can be seen through by forming an electrode included in the display device using a light-transmitting conductive material.
  • a display device in a see-through state does not obstruct the view even when the automobile 9700 is driven. Therefore, the display device according to one embodiment of the present invention can be installed on the windshield of the automobile 9700 .
  • a transistor or the like for driving the display device is provided in the display device, for example, an organic transistor using an organic semiconductor material, a transistor using an oxide semiconductor, or the like is used as the transistor. It is preferable to use a transistor having a property.
  • a display portion 9712 is a display device provided in a pillar portion. For example, by displaying an image from an imaging unit provided in the vehicle body 9701 on the display portion 9712, the field of view blocked by the pillar can be complemented.
  • a display unit 9713 is a display device provided on the dashboard 9703 . For example, by displaying an image from an imaging means provided on the vehicle body 9701 on the display portion 9713, the field of view blocked by the dashboard 9703 can be complemented. That is, automobile 9700 can compensate for blind spots and improve safety by displaying an image from an imaging unit provided in vehicle body 9701 on display units 9712 and 9713 . In addition, by projecting an image that supplements the invisible part, safety confirmation can be performed more naturally and without discomfort.
  • FIG. 24 is a diagram showing the interior of an automobile 9700 that employs bench seats for the driver's seat and the front passenger's seat.
  • the display unit 9721 is a display device provided on the door. For example, by displaying an image from an imaging means provided in the vehicle body 9701 on the display portion 9721, the field of view blocked by the door can be complemented.
  • a display unit 9722 is a display device provided on the steering wheel.
  • the display unit 9723 is a display device provided in the center of the seating surface of the bench seat.
  • the display unit 9714, the display unit 9715, or the display unit 9722 displays, for example, navigation information, travel speed, engine speed, travel distance, remaining amount of fuel, gear status, or air conditioner settings.
  • Various information can be provided to the user.
  • the display items and layout displayed on the display unit can be appropriately changed according to the user's preference. Note that the above information can be displayed on one or more of the display portions 9710 to 9713, the display portion 9721, and the display portion 9723. Further, one or more of the display portions 9710 to 9715 and the display portions 9721 to 9723 can be used as a lighting device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)
PCT/IB2022/057146 2021-08-12 2022-08-02 表示装置の補正方法 Ceased WO2023017362A1 (ja)

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US18/294,395 US12300174B2 (en) 2021-08-12 2022-08-02 Correction method of display apparatus including pixel and plurality of circuits

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