WO2023013801A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

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Publication number
WO2023013801A1
WO2023013801A1 PCT/KR2021/010452 KR2021010452W WO2023013801A1 WO 2023013801 A1 WO2023013801 A1 WO 2023013801A1 KR 2021010452 W KR2021010452 W KR 2021010452W WO 2023013801 A1 WO2023013801 A1 WO 2023013801A1
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WO
WIPO (PCT)
Prior art keywords
hole
light emitting
assembly
semiconductor light
emitting device
Prior art date
Application number
PCT/KR2021/010452
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English (en)
Korean (ko)
Inventor
김명수
박창서
이민우
김정섭
Original Assignee
엘지전자 주식회사
엘지디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 엘지전자 주식회사, 엘지디스플레이 주식회사 filed Critical 엘지전자 주식회사
Priority to KR1020247002565A priority Critical patent/KR20240037972A/ko
Priority to PCT/KR2021/010452 priority patent/WO2023013801A1/fr
Priority to US17/518,391 priority patent/US20230042942A1/en
Publication of WO2023013801A1 publication Critical patent/WO2023013801A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Definitions

  • the embodiment relates to a display device.
  • a display device uses a self-light emitting element such as a light emitting diode as a light source of a pixel to display a high-quality image.
  • a self-light emitting element such as a light emitting diode
  • Light emitting diodes exhibit excellent durability even under harsh environmental conditions, and are in the limelight as a light source for next-generation display devices because of their long lifespan and high luminance.
  • Such display devices are expanding into various forms such as flexible displays, foldable displays, stretchable displays, and rollable displays beyond flat panel displays.
  • a typical display device includes more than tens of millions of pixels. Therefore, since it is very difficult to align at least one or more light emitting elements in each of tens of millions of small-sized pixels, various researches on arranging light emitting elements in a display panel have recently been actively conducted.
  • Transfer technologies that have recently been developed include a pick and place process, a laser lift-off method, or a self-assembly method.
  • a self-assembly method in which a light emitting device is transferred onto a substrate using a magnetic material (or magnet) has recently been in the spotlight.
  • the self-assembly method In the self-assembly method, a number of light emitting elements are dropped into the tank containing the fluid, and the light emitting elements dropped into the fluid are moved to the pixels of the substrate according to the movement of the magnetic material, and the light emitting elements are arranged in each pixel. Therefore, the self-assembly method can quickly and accurately transfer a number of light emitting devices onto a substrate, and thus is attracting attention as a next-generation transfer method.
  • assembly wires 2 and 3 may be disposed on a substrate 1 , and assembly holes 6 may be provided in barrier ribs 5 on the assembly wires 2 and 3 .
  • the light emitting elements 6 and 7 included in the fluid move.
  • An electric field is generated between the assembly wires 2 and 3 by the voltage applied to the assembly wires 2 and 3, and the light emitting elements 6 and 7 are formed in the assembly hole 6 by the dielectrophoretic force formed by the electric field.
  • the electric field strength varies along the Z direction within the assembly hole 6 .
  • a very strong electric field is generated at position a corresponding to the bottom of the assembly hole 6, and the light emitting element can be assembled into the assembly hole 6 only when the electric field is weak or absent at the other positions, that is, positions b and c.
  • Position a is the bottom of the assembly hole 6
  • position b is a position corresponding to the upper surface of the partition wall 5
  • position c is a position corresponding to a predetermined height h from the upper surface of the partition wall 5.
  • the assembling hole 6 is provided for assembling one light emitting element.
  • positions b and c also have significant electric field strength, when the light emitting element 8 that does not conform to the assembly hole 6 is first assembled to the assembly hole 6, the light emitting element 8 that does not conform to the assembly hole 6 Since the light emitting element 7 cannot be assembled into the assembly hole 6 due to interference of the light emitting element 8 assembled into the assembly hole 6, there is a problem in that the assembly rate is lowered. That is, when the corresponding light emitting element 8 is already assembled in the assembly hole 6, the light emitting element 8 is not separated by receiving a relatively strong dielectrophoretic force to the lowermost and uppermost layers of the corresponding light emitting element 8 as a whole. . Therefore, the opportunity to assemble the light emitting element 7 corresponding to the assembly hole 6 into the assembly hole 6 due to the light emitting element 8 already assembled into the assembly hole 6 is fundamentally blocked.
  • positions b and c in the assembly hole 6 also have a relatively strong electric field, the light emitting element 7 is not separated and partially assembled in the assembly hole 6 by the dielectrophoretic force formed by the electric field. That is, there is a problem in that assembly defects in which two or more light emitting elements 7 and 8 are repeatedly assembled in one assembly hole 6 by contacting the upper side of the light emitting element 8 occur. In the case of such overlapping assembly, the waste of the light emitting elements is large, and the manufacturing cost is increased, and when the light emitting elements 7 overlappingly assembled on the upper side are separated during the post process, there is a problem of causing another defect.
  • Embodiments are aimed at solving the foregoing and other problems.
  • Another object of the embodiments is to provide a display device capable of preventing assembly defects.
  • Another object of the embodiments is to provide a display device capable of improving assembly rate.
  • the display device includes a substrate; a plurality of first assembling wires on the substrate; a plurality of second assembling wires on the substrate; a first insulating layer disposed on the substrate and having a first hole on an upper surface of each of the plurality of second assembled wires; and a semiconductor light emitting device in the first hole.
  • a second insulating layer disposed on the first insulating layer and the plurality of second assembly lines and having at least two second holes may be included.
  • a diameter of the second hole may be smaller than a second width of each of the plurality of second assembly wires.
  • a diameter of the second hole may be smaller than a diameter of the semiconductor light emitting device.
  • the at least two or more second holes may be located within the first hole.
  • At least four second holes may be formed along an edge of the first hole in the second insulating layer within the second hole.
  • two second holes may be formed in the second insulating layer in the second hole to face each other along a long axis direction of the first hole.
  • the at least two or more second holes may contact a lower surface of the semiconductor light emitting device.
  • the first assembly line may contact the second insulating layer.
  • Embodiments can improve the assembly rate.
  • an assembly hole is provided on a region corresponding to between two assembly wires, and a light emitting element is assembled in the assembly hole by a dielectrophoretic force formed between the assembly wires. Since the assembly hole is provided on a region corresponding to between the two assembly wires, the strength of the electric field generated between the two assembly wires does not greatly vary along the vertical direction (Z direction) within the assembly hole. That is, the difference between the strength of the electric field at the bottom of the assembly hole and the strength of the electric field at or above the assembly hole is not large. Therefore, other light emitting elements that do not conform to the assembly hole are also assembled into the assembly hole even though they are located above the assembly hole.
  • the light emitting device assembled into the assembly hole does not escape because the strength of the electric field is the highest at the bottom of the assembly hole.
  • the light emitting element conforming to the assembly hole has already been assembled into the corresponding assembly hole and is no longer in the corresponding assembly hole by the other light emitting elements that do not escape. There was a problem that the assembly rate was lowered because the assembly could not be performed.
  • an embodiment may cause an abrupt change in electric field strength to occur along a vertical direction within an assembly hole. That is, the electric field intensity is greatest at the bottom of the assembly hole, and the electric field intensity rapidly decreases along a direction away from the bottom of the assembly hole upward, that is, along the upper direction, so that the electric field intensity is zero or weak at the top of the assembly hole.
  • the assembly hole that is, the first hole
  • the assembly hole is disposed on, for example, the second assembly wiring among the first assembly wiring and the second assembly wiring, so that the electric field along the vertical direction in the first hole on the second assembly wiring The intensity can be drastically reduced.
  • the electric field strength at the upper side of the assembly hole is weak or non-existent, so that the other light emitting element cannot be assembled into the assembly hole.
  • the shape of the other light emitting element is different from the shape of the corresponding assembly hole, so that the other light emitting element may not be completely assembled into the assembly hole but may be assembled obliquely.
  • the embodiment can prevent assembly defects.
  • the size of the semiconductor light emitting element conforming to the assembly hole is made smaller than the diameter of the assembly hole, so that the semiconductor light emitting element can be easily assembled in the assembly hole. Therefore, when the semiconductor light emitting device is assembled in the assembly hole, a tolerance may occur between the inside of the assembly hole and the semiconductor light emitting device. This tolerance may be larger when the semiconductor light emitting device is biased to one side within the assembly hole.
  • the relatively large electric field strength can be obtained through a corresponding tolerance. Therefore, even if the semiconductor light emitting device is assembled in the assembly hole, two or more semiconductor light emitting devices are assembled in an overlapping manner because the other semiconductor light emitting device contacts the upper side of the semiconductor light emitting device assembled in the assembly hole due to the electric field in the tolerance. , may cause assembly failure.
  • an abrupt change in electric field strength may occur in the vertical direction within the assembly hole. That is, the electric field intensity is greatest at the bottom of the assembly hole, and the electric field intensity rapidly decreases along a direction away from the bottom of the assembly hole upward, that is, along the upper direction, so that the electric field intensity is zero or weak at the top of the assembly hole.
  • the capacitance may be lowered by making the distance between the first assembly line and the second assembly line much larger than at least the diameter of the semiconductor light emitting device.
  • the capacitance when a signal is provided to the data line and the common data line for light emission of the semiconductor light emitting device, distortion of the corresponding signal can be minimized to accurately obtain desired luminance from the semiconductor light emitting device, thereby improving image quality.
  • FIG. 3 shows the electric field strength along the vertical direction in the assembly hole of FIG. 1 .
  • FIG. 4 illustrates a living room of a house in which a display device according to an exemplary embodiment is disposed.
  • FIG. 5 is a schematic block diagram of a display device according to an exemplary embodiment.
  • FIG. 6 is a circuit diagram illustrating an example of a pixel of FIG. 5 .
  • FIG. 7 is a plan view showing the display panel of FIG. 5 in detail.
  • FIG. 8 is an enlarged view of a first panel area in the display device of FIG. 4 .
  • FIG. 9 is an enlarged view of area A2 of FIG. 8 .
  • FIG. 10 is a view showing an example in which a light emitting device according to an embodiment is assembled to a substrate by a self-assembly method.
  • FIG. 11 is a schematic cross-sectional view of the display panel of FIG. 5 .
  • FIG. 12 is a plan view illustrating the display device according to the first embodiment.
  • FIG. 13 is a cross-sectional view taken along line A-B of FIG. 13 .
  • FIG. 14 is an enlarged view of region X of FIG. 12 .
  • 15 shows an electric field distribution during self-assembly in the display panel according to the first embodiment.
  • 18A to 18C show how semiconductor light emitting devices other than the blue semiconductor light emitting device are erroneously assembled in the first assembly hole.
  • 20A to 20C show semiconductor light emitting devices other than the green semiconductor light emitting device being misassembled into the second assembly hole.
  • FIG. 21 shows a state in which a red semiconductor light emitting device is properly assembled in a third assembly hole.
  • 22A and 22B show a state in which a semiconductor light emitting device other than a red semiconductor light emitting device is misassembled into a third assembly hole.
  • FIG. 23 is a plan view illustrating a display device manufactured by a post process after the semiconductor light emitting device of FIG. 12 is assembled.
  • 25 is a cross-sectional view of a display device according to a second embodiment.
  • 26 shows an electric field distribution during self-assembly in the display panel according to the second embodiment.
  • the display devices described in this specification include mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation devices, slate PCs, Tablet PCs, ultra-books, digital TVs, desktop computers, and the like may be included.
  • PDAs personal digital assistants
  • PMPs portable multimedia players
  • navigation devices slate PCs, Tablet PCs, ultra-books, digital TVs, desktop computers, and the like may be included.
  • slate PCs slate PCs
  • Tablet PCs ultra-books
  • digital TVs desktop computers, and the like
  • the configuration according to the embodiment described in this specification can be applied to a device capable of displaying even a new product type to be developed in the future.
  • FIG. 4 illustrates a living room of a house in which a display device according to an exemplary embodiment is disposed.
  • the display device 100 of the embodiment may display the status of various electronic products such as the washing machine 101, the robot cleaner 102, and the air purifier 103, and the electronic products and IOT-based and can control each electronic product based on the user's setting data.
  • the display device 100 may include a flexible display fabricated on a thin and flexible substrate.
  • a flexible display can be bent or rolled like paper while maintaining characteristics of a conventional flat panel display.
  • a unit pixel means a minimum unit for implementing one color.
  • a unit pixel of the flexible display may be implemented by a light emitting device.
  • the light emitting device may be a Micro-LED or a Nano-LED, but is not limited thereto.
  • FIG. 5 is a block diagram schematically illustrating a display device according to an exemplary embodiment
  • FIG. 6 is a circuit diagram illustrating an example of a pixel of FIG. 5 .
  • a display device may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 and a power supply circuit 50 .
  • the display device 100 may drive a light emitting element in an active matrix (AM) method or a passive matrix (PM) method.
  • AM active matrix
  • PM passive matrix
  • the driving circuit 20 may include a data driver 21 and a timing controller 22 .
  • the display panel 10 may be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 may be formed in a circular or elliptical shape. At least one side of the display panel 10 may be formed to be bent with a predetermined curvature.
  • the display panel 10 may be divided into a display area DA and a non-display area NDA disposed around the display area DA.
  • the display area DA is an area where the pixels PX are formed to display an image.
  • the display panel 10 includes data lines (D1 to Dm, where m is an integer greater than or equal to 2), scan lines (S1 to Sn, where n is an integer greater than or equal to 2) crossing the data lines (D1 to Dm), and a high potential voltage. It may include pixels PXs connected to a high-potential voltage line supplied thereto, a low-potential voltage line supplied with a low-potential voltage, data lines D1 to Dm, and scan lines S1 to Sn.
  • Each of the pixels PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .
  • the first sub-pixel PX1 emits light of a first color of a first main wavelength
  • the second sub-pixel PX2 emits light of a second color of a second main wavelength
  • the third sub-pixel PX3 emits light of a second color.
  • a third color light having a third main wavelength may be emitted.
  • the first color light may be red light
  • the second color light may be green light
  • the third color light may be blue light, but are not limited thereto.
  • each of the pixels PX includes three sub-pixels, but is not limited thereto. That is, each of the pixels PX may include four or more sub-pixels.
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 includes at least one of the data lines D1 to Dm, at least one of the scan lines S1 to Sn, and a high voltage signal. It can be connected to the above voltage line.
  • the first sub-pixel PX1 may include light emitting elements LD, a plurality of transistors for supplying current to the light emitting elements LD, and at least one capacitor Cst.
  • each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include only one light emitting element LD and at least one capacitor Cst. may be
  • Each of the light emitting elements LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers, and a second electrode.
  • the first electrode may be an anode electrode and the second electrode may be a cathode electrode, but is not limited thereto.
  • the light emitting device LD may be one of a horizontal light emitting device, a flip chip type light emitting device, and a vertical light emitting device.
  • the plurality of transistors may include a driving transistor DT supplying current to the light emitting elements LD and a scan transistor ST supplying a data voltage to a gate electrode of the driving transistor DT, as shown in FIG. 6 .
  • the driving transistor DT has a gate electrode connected to the source electrode of the scan transistor ST, a source electrode connected to a high potential voltage line to which a high potential voltage is applied, and a drain connected to the first electrodes of the light emitting elements LD. electrodes may be included.
  • the scan transistor ST has a gate electrode connected to the scan line (Sk, k is an integer satisfying 1 ⁇ k ⁇ n), a source electrode connected to the gate electrode of the driving transistor DT, and data lines Dj, j an integer that satisfies 1 ⁇ j ⁇ m).
  • the capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT.
  • the storage capacitor Cst charges a difference between the gate voltage and the source voltage of the driving transistor DT.
  • the driving transistor DT and the scan transistor ST may be formed of thin film transistors.
  • the driving transistor DT and the scan transistor ST are formed of P-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), but the present invention is not limited thereto.
  • the driving transistor DT and the scan transistor ST may be formed of N-type MOSFETs. In this case, positions of the source and drain electrodes of the driving transistor DT and the scan transistor ST may be changed.
  • each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 includes one driving transistor DT, one scan transistor ST, and one capacitor ( 2T1C (2 Transistor - 1 capacitor) having Cst) is illustrated, but the present invention is not limited thereto.
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include a plurality of scan transistors ST and a plurality of capacitors Cst.
  • the second sub-pixel PX2 and the third sub-pixel PX3 may be expressed with substantially the same circuit diagram as the first sub-pixel PX1 , a detailed description thereof will be omitted.
  • the driving circuit 20 outputs signals and voltages for driving the display panel 10 .
  • the driving circuit 20 may include a data driver 21 and a timing controller 22 .
  • the data driver 21 receives digital video data DATA and a source control signal DCS from the timing controller 22 .
  • the data driver 21 converts the digital video data DATA into analog data voltages according to the source control signal DCS and supplies them to the data lines D1 to Dm of the display panel 10 .
  • the timing controller 22 receives digital video data DATA and timing signals from the host system.
  • the timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock.
  • the host system may be an application processor of a smart phone or tablet PC, a monitor, a system on chip of a TV, and the like.
  • the timing controller 22 generates control signals for controlling operation timings of the data driver 21 and the scan driver 30 .
  • the control signals may include a source control signal DCS for controlling the operation timing of the data driver 21 and a scan control signal SCS for controlling the operation timing of the scan driver 30 .
  • the driving circuit 20 may be disposed in the non-display area NDA provided on one side of the display panel 10 .
  • the driving circuit 20 may be formed of an integrated circuit (IC) and mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method.
  • COG chip on glass
  • COP chip on plastic
  • ultrasonic bonding method The present invention is not limited to this.
  • the driving circuit 20 may be mounted on a circuit board (not shown) instead of the display panel 10 .
  • the data driver 21 may be mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method, and the timing controller 22 may be mounted on a circuit board. there is.
  • COG chip on glass
  • COP chip on plastic
  • the scan driver 30 receives the scan control signal SCS from the timing controller 22 .
  • the scan driver 30 generates scan signals according to the scan control signal SCS and supplies them to the scan lines S1 to Sn of the display panel 10 .
  • the scan driver 30 may include a plurality of transistors and be formed in the non-display area NDA of the display panel 10 .
  • the scan driver 30 may be formed as an integrated circuit, and in this case, it may be mounted on a gate flexible film attached to the other side of the display panel 10 .
  • the circuit board may be attached to pads provided on one edge of the display panel 10 using an anisotropic conductive film. Due to this, the lead lines of the circuit board may be electrically connected to the pads.
  • the circuit board may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. The circuit board may be bent under the display panel 10 . Accordingly, one side of the circuit board may be attached to one edge of the display panel 10 and the other side may be disposed under the display panel 10 and connected to a system board on which a host system is mounted.
  • the power supply circuit 50 may generate voltages necessary for driving the display panel 10 from the main power supplied from the system board and supply the voltages to the display panel 10 .
  • the power supply circuit 50 generates a high potential voltage (VDD) and a low potential voltage (VSS) for driving the light emitting elements (LD) of the display panel 10 from the main power supply to generate the display panel 10. of high-potential voltage lines and low-potential voltage lines.
  • the power supply circuit 50 may generate and supply driving voltages for driving the driving circuit 20 and the scan driving unit 30 from the main power.
  • FIG. 7 is a plan view showing the display panel of FIG. 5 in detail.
  • data pads DP1 to DPp, where p is an integer greater than or equal to 2
  • floating pads FP1 and FP2 floating pads FP1 and FP2
  • power pads PP1 and PP2 floating lines FL1 and FL2
  • low potential voltage line VSSL low potential voltage line VSSL
  • data lines D1 to Dm first pad electrodes 210 and second pad electrodes 220 are shown.
  • data lines D1 to Dm, first pad electrodes 210, second pad electrodes 220, and pixels PX are provided in the display area DA of the display panel 10. can be placed.
  • the data lines D1 to Dm may extend long in the second direction (Y-axis direction). One sides of the data lines D1 to Dm may be connected to the driving circuit ( 20 in FIG. 5 ). For this reason, the data voltages of the driving circuit 20 may be applied to the data lines D1 to Dm.
  • the first pad electrodes 210 may be spaced apart from each other at predetermined intervals in the first direction (X-axis direction). For this reason, the first pad electrodes 210 may not overlap the data lines D1 to Dm.
  • the first pad electrodes 210 disposed on the right edge of the display area DA may be connected to the first floating line FL1 in the non-display area NDA.
  • the first pad electrodes 210 disposed on the left edge of the display area DA may be connected to the second floating line FL2 in the non-display area NDA.
  • Each of the second pad electrodes 220 may extend long in the first direction (X-axis direction). For this reason, the second pad electrodes 220 may overlap the data lines D1 to Dm. Also, the second pad electrodes 220 may be connected to the low potential voltage line VSSL in the non-display area NDA. For this reason, the low potential voltage of the low potential voltage line VSSL may be applied to the second pad electrodes 220 .
  • a pad part PA, a driving circuit 20, a first floating line FL1, a second floating line FL2, and a low potential voltage line VSSL are disposed in the non-display area NDA of the display panel 10. It can be.
  • the cap head part PA may include data pads DP1 to DPp, floating pads FP1 and FP2, and power pads PP1 and PP2.
  • the pad part PA may be disposed on one edge of the display panel 10, for example, on the lower edge.
  • the data pads DP1 to DPp, the floating pads FP1 and FP2, and the power pads PP1 and PP2 may be disposed side by side in the first direction (X-axis direction) of the pad part PA.
  • a circuit board may be attached to the data pads DP1 to DPp, the floating pads FP1 and FP2, and the power pads PP1 and PP2 using an anisotropic conductive film. Accordingly, the circuit board, the data pads DP1 to DPp, the floating pads FP1 and FP2, and the power pads PP1 and PP2 may be electrically connected.
  • the driving circuit 20 may be connected to the data pads DP1 to DPp through link lines.
  • the driving circuit 20 may receive digital video data DATA and timing signals through the data pads DP1 to DPp.
  • the driving circuit 20 may convert the digital video data DATA into analog data voltages and supply them to the data lines D1 to Dm of the display panel 10 .
  • the low potential voltage line VSSL may be connected to the first power pad PP1 and the second power pad PP2 of the pad part PA.
  • the low potential voltage line VSSL may extend long in the second direction (Y-axis direction) in the non-display area NDA outside the left and right sides of the display area DA.
  • the low potential voltage line VSSL may be connected to the second pad electrode 220 . Due to this, the low potential voltage of the power supply circuit 50 is applied to the second pad electrode 220 through the circuit board, the first power pad PP1 , the second power pad PP2 and the low potential voltage line VSSL. may be authorized.
  • the first floating line FL1 may be connected to the first floating pad FP1 of the pad part PA.
  • the first floating line FL1 may extend long in the second direction (Y-axis direction) in the non-display area NDA outside the left and right outside of the display area DA.
  • the first floating pad FP1 and the first floating line FL1 may be dummy pads and dummy lines to which no voltage is applied.
  • the second floating line FL2 may be connected to the second floating pad FP2 of the pad part PA.
  • the first floating line FL1 may extend long in the second direction (Y-axis direction) in the non-display area NDA outside the left and right outside of the display area DA.
  • the second floating pad FP2 and the second floating line FL2 may be dummy pads and dummy lines to which no voltage is applied.
  • the light emitting elements (LDs in FIG. 6 ) have a very small size, they are mounted on the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of each of the pixels PX. is very difficult
  • the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel of each of the pixels PX are aligned to align the light emitting devices ( 150 of FIG. 8 ).
  • An electric field can be formed at (PX3).
  • dielectrophoretic force is applied to the light emitting elements ( 150 in FIG. 8 ) using a dielectrophoretic method to form the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 . ), each of the light emitting elements (150 in FIG. 8) may be aligned.
  • the first pad electrodes 210 are spaced apart at predetermined intervals in the first direction (X-axis direction), but during the manufacturing process, the first pad electrodes 210 are separated in the first direction (X-axis direction). direction), and can be extended and arranged long.
  • the first pad electrodes 210 may be connected to the first floating line FL1 and the second floating line FL2 during the manufacturing process. Therefore, the first pad electrodes 210 may receive a ground voltage through the first floating line FL1 and the second floating line FL2. Therefore, after aligning the light emitting elements ( 150 in FIG. 8 ) using a dielectrophoretic method during the manufacturing process, the first pad electrodes 210 are disconnected in the first direction (X-axis direction) by disconnecting the first pad electrodes 210 . ) and may be spaced apart at predetermined intervals.
  • first floating line FL1 and the second floating line FL2 are lines for applying a ground voltage during a manufacturing process, and no voltage may be applied in a completed display device.
  • ground voltage may be applied to the first floating line FL1 and the second floating line FL2 to prevent static electricity or to drive the light emitting element ( 150 in FIG. 8 ) in the completed display device.
  • FIG. 8 is an enlarged view of a first panel area in the display device of FIG. 3;
  • the display device 100 of the embodiment may be manufactured by mechanically and electrically connecting a plurality of panel areas such as the first panel area A1 by tiling.
  • the first panel area A1 may include a plurality of light emitting elements 150 arranged for each unit pixel (PX in FIG. 5 ).
  • the unit pixel PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .
  • a plurality of red light emitting elements 150R are disposed in the first sub-pixel PX1
  • a plurality of green light emitting elements 150G are disposed in the second sub-pixel PX2
  • a plurality of blue light emitting elements 150B may be disposed in the third sub-pixel PX3.
  • the unit pixel PX may further include a fourth sub-pixel in which no light emitting element is disposed, but is not limited thereto.
  • FIG. 9 is an enlarged view of area A2 of FIG. 8 .
  • a display device 100 may include a substrate 200 , assembled wires 201 and 202 , an insulating layer 206 , and a plurality of light emitting elements 150 . More components than this may be included.
  • the assembly wiring may include a first assembly wiring 201 and a second assembly wiring 202 spaced apart from each other.
  • the first assembling wire 201 and the second assembling wire 202 may be provided to generate dielectrophoretic force for assembling the light emitting device 150 .
  • the light emitting device 150 may be one of a horizontal light emitting device, a flip chip type light emitting device, and a vertical light emitting device.
  • the light emitting element 150 may include, but is not limited to, a red light emitting element 150, a green light emitting element 150G, and a blue light emitting element 150B0 to form a sub-pixel, respectively. It is also possible to implement red and green colors by providing a green phosphor or the like.
  • the substrate 200 may be a rigid substrate or a flexible substrate.
  • the substrate 200 may be formed of glass or polyimide.
  • the substrate 200 may include a flexible material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET).
  • PEN polyethylene naphthalate
  • PET polyethylene terephthalate
  • the substrate 200 may be a transparent material, but is not limited thereto.
  • the insulating layer 206 may include an insulating and flexible material such as polyimide, PEN, PET, or the like, and may be integrally formed with the substrate 200 to form a single substrate.
  • the insulating layer 206 may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer may have flexibility and thus enable a flexible function of the display device.
  • the insulating layer 206 may be an anisotropy conductive film (ACF) or a conductive adhesive layer such as an anisotropic conductive medium or a solution containing conductive particles.
  • the conductive adhesive layer may be a layer that is electrically conductive in a direction perpendicular to the thickness but electrically insulating in a direction horizontal to the thickness.
  • the insulating layer 206 may include an assembly hole 203 into which the light emitting device 150 is inserted. Therefore, during self-assembly, the light emitting element 150 can be easily inserted into the assembly hole 203 of the insulating layer 206 .
  • the assembly hole 203 may be called an insertion hole, a fixing hole, an alignment hole, or the like.
  • FIG. 10 is a view showing an example in which a light emitting device according to an embodiment is assembled to a substrate by a self-assembly method.
  • the substrate 200 may be a panel substrate of a display device.
  • the substrate 200 will be described as a panel substrate of a display device, but the embodiment is not limited thereto.
  • the substrate 200 may be formed of glass or polyimide.
  • the substrate 200 may include a flexible material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET).
  • PEN polyethylene naphthalate
  • PET polyethylene terephthalate
  • the substrate 200 may be a transparent material, but is not limited thereto.
  • a light emitting device 150 may be put into a chamber 1300 filled with a fluid 1200 .
  • the fluid 1200 may be water such as ultrapure water, but is not limited thereto.
  • a chamber may also be called a water bath, container, vessel, or the like.
  • the substrate 200 may be disposed on the chamber 1300 .
  • the substrate 200 may be introduced into the chamber 1300 .
  • a pair of assembly wires 201 and 202 corresponding to each of the light emitting devices 150 to be assembled may be disposed on the substrate 200 .
  • the assembled wires 201 and 202 may be formed of transparent electrodes (ITO) or may include a metal material having excellent electrical conductivity.
  • the assembled wires 201 and 202 may be titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo) ) It may be formed of at least one or an alloy thereof.
  • An electric field is formed between the assembled wirings 201 and 202 by an externally supplied voltage, and a dielectrophoretic force may be formed between the assembled wirings 201 and 202 by the electric field.
  • the light emitting element 150 can be fixed to the assembly hole 203 on the substrate 200 by this dielectrophoretic force.
  • the distance between the assembly wires 201 and 202 is smaller than the width of the light emitting element 150 and the width of the assembly hole 203, so that the assembly position of the light emitting element 150 using an electric field can be more accurately fixed.
  • An insulating layer 206 is formed on the assembled wires 201 and 202 to protect the assembled wires 201 and 202 from the fluid 1200 and prevent current flowing through the assembled wires 201 and 202 from leaking.
  • the insulating layer 206 may be formed of a single layer or multiple layers of an inorganic insulator such as silica or alumina or an organic insulator.
  • the insulating layer 206 may include an insulating and flexible material such as polyimide, PEN, PET, or the like, and may be integrally formed with the substrate 200 to form a single substrate.
  • the insulating layer 206 may be an adhesive insulating layer or a conductive adhesive layer having conductivity. Since the insulating layer 206 is flexible, it can enable a flexible function of the display device.
  • the insulating layer 206 has a barrier rib, and an assembly hole 203 may be formed by the barrier rib. For example, when the substrate 200 is formed, a portion of the insulating layer 206 is removed, so that each of the light emitting devices 150 may be assembled into the assembly hole 203 of the insulating layer 206 .
  • An assembly hole 203 to which the light emitting devices 150 are coupled is formed in the substrate 200 , and a surface on which the assembly hole 203 is formed may contact the fluid 1200 .
  • the assembly hole 203 may guide an accurate assembly position of the light emitting device 150 .
  • the assembly hole 203 may have a shape and size corresponding to the shape of the light emitting element 150 to be assembled at the corresponding position. Accordingly, it is possible to prevent assembling another light emitting device or assembling a plurality of light emitting devices into the assembly hole 203 .
  • the assembly device 1100 including a magnetic material may move along the substrate 200 .
  • a magnetic material for example, a magnet or an electromagnet may be used.
  • the assembly device 1100 may move while in contact with the substrate 200 in order to maximize the area of the magnetic field into the fluid 1200 .
  • the assembly device 1100 may include a plurality of magnetic bodies or may include a magnetic body having a size corresponding to that of the substrate 200 . In this case, the moving distance of the assembling device 1100 may be limited within a predetermined range.
  • the light emitting device 150 in the chamber 1300 may move toward the assembly device 1100 .
  • the light emitting element 150 may enter the assembly hole 203 and come into contact with the substrate 200 .
  • the electric field applied by the assembly lines 201 and 202 formed on the board 200 prevents the light emitting element 150 contacting the board 200 from being separated by the movement of the assembly device 1100.
  • a predetermined solder layer (not shown) may be further formed between the light emitting element 150 assembled on the assembly hole 203 of the substrate 200 and the substrate 200 to improve the bonding strength of the light emitting element 150. .
  • electrode wires may be connected to the light emitting element 150 to apply power.
  • At least one insulating layer may be formed by a post process.
  • At least one insulating layer may be a transparent resin or a resin containing a reflective material or a scattering material.
  • an image may be displayed using a light emitting element.
  • the light-emitting device of the embodiment is a self-emitting device that emits light by itself when electricity is applied, and may be a semiconductor light-emitting device. Since the light emitting element of the embodiment is made of an inorganic semiconductor material, it is resistant to deterioration and has a semi-permanent lifespan, so it can contribute to realizing high-quality and high-definition images in a display device by providing stable light.
  • a display device may use a light emitting element as a light source, include a color generator on the light emitting element, and display an image by the color generator (FIG. 11).
  • the display device may display projections through a display panel in which each of a plurality of light emitting elements generating light of different colors is arranged in a pixel.
  • FIG. 11 is a schematic cross-sectional view of the display panel of FIG. 5 .
  • the display panel 10 of the embodiment may include a first substrate 40 , a light emitting unit 41 , a color generating unit 42 , and a second substrate 46 .
  • the display panel 10 of the embodiment may include more components than these, but is not limited thereto.
  • the first substrate 40 may be the substrate 200 shown in FIG. 9 .
  • One or more insulating layers may be disposed, but is not limited thereto.
  • the first substrate 40 may support the light emitting unit 41 , the color generating unit 42 , and the second substrate 46 .
  • the first substrate 40 includes various elements as described above, for example, data lines (D1 to Dm, m is an integer greater than or equal to 2), scan lines S1 to Sn, and high potential voltage as shown in FIG. line and low potential voltage line, as shown in FIG. 6, a plurality of transistors ST and DT and at least one capacitor Cst, and as shown in FIG. 7, a first pad electrode 210 and a second pad An electrode 220 may be provided.
  • the first substrate 40 may be formed of glass or a flexible material, but is not limited thereto.
  • the light emitting unit 41 may provide light to the color generating unit 42 .
  • the light emitting unit 41 may include a plurality of light sources that emit light themselves by applying electricity.
  • the light source may include a light emitting element ( 150 in FIG. 8 ).
  • the plurality of light emitting devices 150 are separately disposed for each sub-pixel of a pixel and independently emit light by controlling each sub-pixel.
  • the plurality of light emitting elements 150 may be disposed regardless of pixel division and simultaneously emit light from all sub-pixels.
  • the light emitting device 150 of the embodiment may emit blue light, but is not limited thereto.
  • the light emitting device 150 of the embodiment may emit white light or purple light.
  • the light emitting device 150 may emit red light, green light, and blue light for each sub-pixel.
  • a red light emitting element emitting red light is disposed in a first sub-pixel, that is, a red sub-pixel
  • a green light emitting element emitting green light is disposed in a second sub-pixel, that is, a green sub-pixel.
  • a blue light emitting device emitting blue light may be disposed in the three sub-pixels, that is, the blue sub-pixel.
  • each of the red light emitting device, the green light emitting device, and the blue light emitting device may include a group II-IV compound or a group III-V compound, but is not limited thereto.
  • the group III-V compound may be a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof;
  • it may be selected from the group consisting of quaternary compounds selected from the group consisting of AlGaInP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPS
  • the color generating unit 42 may generate light of a different color from the light provided by the light emitting unit 41 .
  • the color generator 42 may include a first color generator 43 , a second color generator 44 , and a third color generator 45 .
  • the first color generating unit 43 corresponds to the first sub-pixel PX1 of the pixel
  • the second color generating unit 44 corresponds to the second sub-pixel PX2 of the pixel
  • the third color generating unit ( 45) may correspond to the third sub-pixel PX3 of the pixel.
  • the first color generating unit 43 generates first color light based on the light provided from the light emitting unit 41
  • the second color generating unit 44 generates second color light based on the light provided from the light emitting unit 41.
  • Color light is generated
  • the third color generator 45 may generate third color light based on light provided from the light emitting unit 41 .
  • the first color generating unit 43 outputs blue light from the light emitting unit 41 as red light
  • the second color generating unit 44 outputs blue light from the light emitting unit 41 as green light.
  • the third color generating unit 45 may output blue light from the light emitting unit 41 as it is.
  • the first color generator 43 includes a first color filter
  • the second color generator 44 includes a second color filter
  • the third color generator 45 includes a third color filter.
  • the first color filter, the second color filter, and the third color filter may be formed of a transparent material through which light can pass.
  • At least one of the first color filter, the second color filter, and the third color filter may include a quantum dot.
  • the quantum dot of the embodiment may be selected from a group II-IV compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and a combination thereof.
  • the II-VI compound is a binary element compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof;
  • Group III-V compound is a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof;
  • it may be selected from the group consisting of quaternary compounds selected from the group consisting of AlGaInP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb
  • Group IV-VI compounds are SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a binary element compound selected from the group consisting of mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; And it may be selected from the group consisting of quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof.
  • Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof.
  • the group IV compound may be a binary element compound selected from the group consisting of SiC, SiGe, and mixtures thereof.
  • quantum dots may have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, and light emitted through the quantum dots may be emitted in all directions. Accordingly, the viewing angle of the light emitting display device may be improved.
  • FWHM full width of half maximum
  • quantum dots may have a shape such as spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplatelet particles, etc., but are not limited thereto. does not
  • the first color filter may include red quantum dots
  • the second color filter may include green quantum dots.
  • the third color filter may not include quantum dots, but is not limited thereto.
  • blue light from the light emitting device 150 is absorbed by the first color filter, and the absorbed blue light is wavelength-shifted by red quantum dots to output red light.
  • blue light from the light emitting device 150 is absorbed by the second color filter, and the wavelength of the absorbed blue light is shifted by green quantum dots to output green light.
  • blue light from the light emitting device may be absorbed by the third color filter, and the absorbed blue light may be emitted as it is.
  • the light emitting device 150 when the light emitting device 150 emits white light, not only the first color filter and the second color filter, but also the third color filter may include quantum dots. That is, the wavelength of white light of the light emitting device 150 may be shifted to blue light by the quantum dots included in the third color filter.
  • At least one of the first color filter, the second color filter, and the third color filter may include a phosphor.
  • some of the first color filters, the second color filters, and the third color filters may include quantum dots, and others may include phosphors.
  • each of the first color filter and the second color filter may include a phosphor and a quantum dot.
  • at least one of the first color filter, the second color filter, and the third color filter may include scattering particles. Since the blue light incident on each of the first color filter, the second color filter, and the third color filter is scattered by the scattering particles and the color of the scattered blue light is shifted by the corresponding quantum dots, light output efficiency may be improved.
  • the first color generator 43 may include a first color conversion layer and a first color filter.
  • the second color generator 44 may include a second color converter and a second color filter.
  • the third color generator 45 may include a third color conversion layer and a third color filter.
  • Each of the first color conversion layer, the second color conversion layer, and the third color conversion layer may be disposed adjacent to the light emitting unit 41 .
  • the first color filter, the second color filter and the third color filter may be disposed adjacent to the second substrate 46 .
  • the first color filter may be disposed between the first color conversion layer and the second substrate 46 .
  • the second color filter may be disposed between the second color conversion layer and the second substrate 46 .
  • the third color filter may be disposed between the third color conversion layer and the second substrate 46 .
  • the first color filter may contact the upper surface of the first color conversion layer and have the same size as the first color conversion layer, but is not limited thereto.
  • the second color filter may contact the upper surface of the second color conversion layer and have the same size as the second color conversion layer, but is not limited thereto.
  • the third color filter may contact the upper surface of the third color conversion layer and have the same size as the third color conversion layer, but is not limited thereto.
  • the first color conversion layer may include red quantum dots
  • the second color conversion layer may include green quantum dots.
  • the third color conversion layer may not include quantum dots.
  • the first color filter includes a red-based material that selectively transmits the red light converted in the first color conversion layer
  • the second color filter includes green light that selectively transmits the green light converted in the second color conversion layer.
  • a blue-based material may be included
  • the third color filter may include a blue-based material that selectively transmits blue light transmitted as it is through the third color conversion layer.
  • the third color conversion layer as well as the first color conversion layer and the second color conversion layer may also include quantum dots. That is, the wavelength of white light of the light emitting device 150 may be shifted to blue light by the quantum dots included in the third color filter.
  • the second substrate 46 may be disposed on the color generator 42 to protect the color generator 42 .
  • the second substrate 46 may be formed of glass, but is not limited thereto.
  • the second substrate 46 may be called a cover window, cover glass, or the like.
  • the second substrate 46 may be formed of glass or a flexible material, but is not limited thereto.
  • a first hole is formed on a first assembly line and a second assembly line having a second width smaller than the first width of the first assembly line, so that an electric field is intensively distributed in the first hole during self-assembly.
  • the semiconductor light emitting device can be more easily, accurately and quickly assembled in the first hole by using the greater dielectrophoretic force formed in the first hole, thereby improving the assembly rate.
  • a first hole is formed on a first assembly line and a second assembly line having a second width smaller than the first width of the first assembly line, so that the dielectrophoretic force is weak or not present on the upper side of the first hole. Accordingly, assembly defects may be prevented by preventing another semiconductor light emitting device from being repeatedly assembled on a semiconductor foot and an element already assembled in the first hole.
  • FIG. 12 is a plan view illustrating the display device according to the first embodiment.
  • FIG. 13 is a cross-sectional view taken along line A-B of FIG. 13 .
  • the display device 300 includes a substrate 310, a plurality of first assembled wires 321, a plurality of second assembled wires 322, and a first insulating layer. 340 and the semiconductor light emitting device 150.
  • the semiconductor light emitting device 150 may include a blue semiconductor light emitting device 150_B, a green semiconductor light emitting device 150_G, and a red semiconductor light emitting device 150_R, as shown in FIGS. 17, 19 and 21 .
  • a color image may be implemented by blue light generated from the blue semiconductor light emitting device 150_B, green light generated from the green semiconductor light emitting device 150_G, and red light generated from the red semiconductor light emitting device 150_R.
  • the blue semiconductor light emitting device 150_B may be referred to as a first semiconductor light emitting device
  • the green semiconductor light emitting device 150_G may be referred to as a second semiconductor light emitting device
  • the red semiconductor light emitting device 150_R may be referred to as a third semiconductor light emitting device.
  • the substrate 310 may be a rigid substrate or a flexible substrate.
  • the substrate 310 may be a transparent material.
  • the first assembly wire 321 and the second assembly wire 322 may be disposed along the X direction.
  • the first assembly line 321 and the second assembly line 322 may be disposed parallel to each other.
  • the first assembly line 321 and the second assembly line 322 may have the same distance from each other along the Y direction.
  • the first assembly wire 321 may have a first width w1 along the Y direction
  • the second assembly wire 322 may have a second width w2 along the Y direction.
  • the second width w2 may be 1/10 or smaller than the first width w1, but is not limited thereto.
  • the first assembly wire 321 and the second assembly wire 321 are formed during self-assembly.
  • the electric field may be concentrated on the second assembly wiring 322 rather than the first assembly wiring 321 .
  • the electric field is distributed in a vertical direction as it approaches the first assembly wire 321 and the second assembly wire 322, and along the horizontal direction between the first assembly wire 321 and the second assembly wire 322. can be distributed. Accordingly, the electric field may be concentrated and distributed along the vertical direction on the second assembled wiring 322 .
  • the second width w2 of the second assembly wiring 322 is significantly smaller than the first width w1 of the first assembly wiring 321, a denser density is formed on the second assembly wiring 322. An electric field with can be distributed.
  • the first assembly line 321 and the second assembly line 322 may be members for assembling the semiconductor light emitting device 150 on the substrate 310 during self-assembly. That is, an electric field may be generated by a voltage applied to the first assembly line 321 and the second assembly line 322 , and a dielectrophoretic force may be formed by the electric field.
  • the plurality of semiconductor light emitting devices 150 may be moved by a magnetic material in a fluid.
  • the moving semiconductor light emitting device 150 may be assembled on the substrate 310 under the influence of dielectrophoretic force. Assembled on the substrate 310 may mean that the substrate 310 is fixed or fixed on the substrate 310 by dielectrophoretic force.
  • the first assembly line 321 and the second assembly line 322 may be made of a metal having excellent electrical conductivity.
  • the first assembly line 321 and the second assembly line 322 may be formed of Al, Cu, or a multilayer structure.
  • the multilayer structure include Mo/Al/Mo, Ti/Al/Ti, and Ti/Cu/Ti, but are not limited thereto.
  • the distance L between the first assembly line 321 and the second assembly line 322 may be larger than the diameter D11 of the semiconductor light emitting device 150 .
  • the diameter D1 of the semiconductor light emitting device 150 may be the diameter of the short axis when the semiconductor light emitting device 150 has different major and minor axes.
  • the first insulating layer 340 has a low capacitance, so that the signal when the semiconductor light emitting device 150 is driven When is provided, signal distortion can be minimized.
  • the distance L between the first assembly wire 321 and the second assembly wire 322 is wide, even if a larger voltage is applied between the first assembly wire 321 and the second assembly wire 322 An electrical short defect between the first assembly line 321 and the second assembly line 322 does not occur.
  • the semiconductor light emitting device is more quickly assembled using a larger dielectrophoretic force generated by a larger voltage and the assembled semiconductor light emitting device is more firmly fixed, assembly defects can be prevented.
  • the semiconductor light emitting device 150 may be assembled on the second assembly line 322, but is not limited thereto.
  • a first hole 345 may be provided on the second assembly line 322 , and the semiconductor light emitting device 150 may be assembled into the first hole 345 .
  • the first hole 345 may be provided on an assembly wire having a small width w1 or w2 among the first assembly wire 321 and the second assembly wire 322 .
  • the first hole 345 is formed on the second assembly wire 322.
  • the first width w1 of the first assembly wire 321 is smaller than the second width w2 of the second assembly wire 322
  • the first hole 345 is formed on the first assembly wire 321.
  • the first hole 345 is formed on the assembly wire 322 having the small width w2, and when self-assembling, a denser electric field is distributed over the assembly wire 322 having the small width w2, and the width w2 Only the semiconductor light emitting device 150 corresponding to the first hole 345 can be assembled into the first hole 345 by using the characteristic that the electric field intensity rapidly decreases along the Z direction on the small assembled wire 322 . Accordingly, assembly defects may be prevented and the assembly rate may be improved.
  • the electric field may be intensively distributed along the Z direction (or upward direction, vertical direction, etc.) on the second assembly wire 322 .
  • the concentration of the electric field that is, the electric field strength, is strongest on the upper surface of the second assembly line 322 and may rapidly decrease in a direction away from the second assembly line 322, that is, in an upward direction (Z direction).
  • a first hole 345 is provided on the second assembled wire 322 , and the same electric field strength distribution is also provided in the first hole 345 . That is, the highest electric field strength may be obtained at or near the bottom of the first hole 345, that is, the top surface of the second wire electrode. In addition, the electric field strength may rapidly decrease along the Z direction away from the bottom of the first hole 345 .
  • comparison shows the electric field strength along the Z direction in the assembly hole 6 provided on the first assembly line 2 and the second assembly line 3 shown in FIG. 1, and the embodiment is shown in FIG. 15 shows the electric field strength along the Z direction in the assembly hole provided on the second assembly line 322 .
  • the electric field intensities at positions a, b, and c are rapidly reduced in the embodiment than in the comparative example.
  • the electric field strength is weak or absent on or above the first hole 345, so only the semiconductor light emitting device 150 having a shape corresponding to the shape of the first hole 345 Since the strong dielectrophoretic force at the bottom of the hole 345 can quickly assemble into the corresponding first hole 345, the assembly rate can be remarkably improved and assembly failure can be prevented.
  • Position a is the bottom of the first hole 345
  • position b is a position corresponding to the upper surface of the first insulating layer 340 within the first hole 345
  • position c is the inside of the first hole 345 may be a position corresponding to a predetermined height (h) from the upper surface of the first insulating layer 340.
  • FIG. 12 shows that three second assembly wires 322 are disposed between two first assembly wires 321, one, two, or four or more assembly wires may be disposed. Also, the plurality of first assembly wires 321 and the plurality of second assembly wires 322 may be alternately disposed. The first widths w1 of the alternately disposed first assembly lines 321 may be different from each other, but are not limited thereto.
  • the two first assembly wires 321_1 and 321_2 An electric field may be generated between each and each of the three second assembled wires 322_1 , 322_2 , and 322_3 .
  • the 2-1 assembly wire 322_1 may generate an electric field with the 1-1 assembly wire 321-1 and may also generate an electric field with the 1-2 assembly wire 321_2.
  • the 2-2 assembly wiring 322_2 may generate an electric field with the 1-1 assembly wiring 321-1 and may also generate an electric field with the 1-2 assembly wiring 321_2.
  • the 2-3 assembly line 322_3 may generate an electric field with the 1-1 assembly line 321-1 and may also generate an electric field with the 1-2 assembly line 321_2.
  • a first insulating layer 340 may be disposed on the substrate 310 to have the assembly hole 345 .
  • the assembly hole 345 is referred to as a first hole 345 to distinguish it from the second hole 355 .
  • the first hole 345 may be disposed on the second assembly wire 322 .
  • a plurality of first holes 345 spaced apart from each other may be provided on the second assembling wires 322 elongated along the X direction.
  • Each of the first holes 345 disposed on the second assembly line 322 extending along the X direction may be formed in a specific sub-pixel of the pixel, but is not limited thereto.
  • the first hole 345 may include a 1-1 hole 345_1 , a 1-2 hole 345_2 , and a 1-3 hole 345_3 .
  • the blue semiconductor light emitting element 150_B is disposed in the 1-1st hole 345_1
  • the green semiconductor light emitting element 150_G is disposed in the 1-2nd hole 345_2
  • the 1-3rd hole 345_3 A red semiconductor light emitting device 150_R may be disposed on.
  • the blue semiconductor light emitting device 150_B and the green semiconductor light emitting device 150_G ) and the red semiconductor light emitting device 150_R may also be arranged in a straight line along the Y direction, but are not limited thereto.
  • One unit pixel may be defined by the blue semiconductor light emitting device 150_B, the green semiconductor light emitting device 150_G, and the red semiconductor light emitting device 150_R.
  • the shapes of the 1-1st hole 345_1, 1-2nd hole 345_2 and 1-3rd hole 345_3 are blue semiconductor light emitting elements 150_B, green semiconductor light emitting elements and red semiconductors. It may correspond to each shape of the light emitting element 150_R.
  • the blue semiconductor light emitting device 150_B may have a long elliptical shape
  • the green semiconductor light emitting device 150_G may have a less long elliptical shape
  • the red semiconductor light emitting device 150_R may have a circular shape.
  • the 1-1st hole 345_1 may have an elongated oval shape corresponding to the shape of the blue semiconductor light emitting device 150_B.
  • the 1-2th hole 345_2 may have a shorter elliptical shape to correspond to the shape of the green semiconductor light emitting device 150_G.
  • the 1-3th hole 345_3 may have a circular shape to correspond to the shape of the red semiconductor light emitting device 150_R.
  • the 1-1st hole 345_1, the 1-2nd hole 345_2 and the 1st-1st hole 345_1, 1-2nd hole 345_2 and 1st-1st hole 345_1 allow each of the blue semiconductor light emitting device 150_B, the green semiconductor light emitting device 150_G, and the red semiconductor light emitting device 150_R to be more easily assembled.
  • a diameter of each of the -3 holes 345_3 may be greater than that of each of the blue semiconductor light emitting device 150_B, the green semiconductor light emitting device 150_G, and the red semiconductor light emitting device 150_R.
  • a blue semiconductor light emitting device 150_B having an elongated ellipse corresponding to the shape of the 1-1 hole 345_1 is disposed in the 1-1 hole 345_1, and the 1-2 hole 345_2 has a second
  • a green semiconductor light emitting element 150_G having a less elongated oval shape corresponding to the shape of the 1-2 hole 345_2 is disposed, and the 1-3 hole 345_3 has a circular shape corresponding to the shape of the 1-3 hole.
  • a red semiconductor light emitting device 150_R may be disposed.
  • Some of the other semiconductor light emitting devices not corresponding to may be located in the corresponding 1-1 hole 345_1 , 1-2 hole 345_2 , and 1-3 hole 345_3 , respectively.
  • a part of another semiconductor light emitting device that does not correspond to each of the 1-1st hole 345_1, 1-2nd hole 345_2, and 1-3th hole 345_3 is a corresponding 1-1 hole ( 345_1), the 1-2nd hole 345_2 and the 1-3rd hole 345_3, respectively, the 1-1st hole 345_1, the 1-2nd hole 345_2 and the 1-3rd hole 345_3 ) Since the dielectrophoretic force is weak or not present on each upper side, other semiconductor light emitting devices are not assembled into the 1-1st hole 345_1, 1-2nd hole 345_2 and 1-3 hole 345_3, respectively. can be improved and assembly defects can be prevented, which will be described later.
  • the first insulating layer 340 may be formed of an organic material, but is not limited thereto.
  • the first insulating layer 340 may be called a barrier rib, but is not limited thereto.
  • the first insulating layer 340 may be formed of an inorganic material or an organic material having excellent breakdown voltage characteristics. SiO 2 or SiNx may be used as the inorganic material, but is not limited thereto.
  • the thickness of the first insulating layer 340 may be smaller than the thickness of the semiconductor light emitting device 150, but is not limited thereto. Accordingly, when the semiconductor light emitting device 150 is disposed in the first hole 345 , the upper side of the semiconductor foot and the device may protrude upward from the top surface of the first insulating layer 340 .
  • the first insulating layer 340 may be provided to form the first hole 345 .
  • the first insulating layer 340 is removed on the second assembled wiring 322 through an etching process to form a first hole 345. can do.
  • an etching process may be performed until the upper surface of the second assembly line 322 is exposed, but is not limited thereto.
  • the second width w2 of the second assembly wire 322 is significantly smaller than the first width w1 of the first assembly wire 321, so that the first assembly wire 322 provided on the second assembly wire 322 has a first width w2.
  • the electric field may be more concentratedly distributed in the hole 345 .
  • the electric field is distributed in a vertical direction within the first hole 345 and the electric field intensity may rapidly decrease along a direction away from the bottom of the first hole 345, that is, in the Z direction. That is, as shown in FIG. 16 , the strength of the electric field may rapidly decrease along the Z direction in the first hole 345 . That is, the strength of the electric field is greatest at the bottom (position a) of the first hole 345, but the intensity of the electric field is weak or weak at the top (position b) or above (position c) of the first hole 345. does not exist.
  • the electric field strength at positions b and c in the embodiment is significantly reduced. In particular, in the embodiment, the electric field strength is close to zero at position c.
  • the electric field is concentrated in the first hole 345 provided on the second assembly line 322, especially the bottom of the first hole 345, dielectrophoresis by the concentrated electric field
  • the force is also great at or near the bottom of the first hole 345. Therefore, only the semiconductor light emitting device 150 corresponding to the shape of the first hole 345 is assembled to the first hole 345, and the assembled semiconductor light emitting device 150 is at the bottom of the first hole 345. It can be firmly fixed to the first hole 345 by the largest dielectrophoretic force of , and the assembly rate can be improved.
  • the semiconductor light emitting device 150 having a different shape from the first hole 345 is difficult to assemble into the first hole 345, and even if assembled into the first hole 345, the semiconductor light emitting device 150 is oblique to the first hole 345. Although assembled, the semiconductor light emitting device 150 can be easily separated from the first hole 345 because there is little or no dielectrophoretic force on the upper side of the first hole 345 .
  • the dielectrophoretic force is weak or weak on the upper side of the first hole 345, so that other Since it is difficult for the semiconductor light emitting device 150 to be fixed on the semiconductor light emitting device 150 assembled in the first hole 345 , assembly defects due to overlapping assembly may be prevented.
  • the display device 300 may include a second insulating layer 350 .
  • the second insulating layer 350 may be disposed on the first insulating layer 340 and the second assembly line 322 .
  • the second insulating layer 350 may be disposed in the first hole 345 .
  • the second insulating layer 350 may be disposed on the bottom and inside of the first hole 345 .
  • the second insulating layer 350 may be made of a material having a permittivity related to dielectrophoretic force.
  • the second insulating layer 350 may be made of an inorganic material or an organic material.
  • the inorganic material may be SiO 2 or SiNx, but is not limited thereto.
  • a thickness of the second insulating layer 350 may be smaller than a thickness of the first insulating layer 340 .
  • the second insulating layer 350 may have a thickness of 50 nm to 1 ⁇ m, but is not limited thereto.
  • the dielectric constant affecting the dielectrophoretic force may be insignificant.
  • the thickness of the second insulating layer 350 exceeds 1 ⁇ m, the thickness of the display device 300 increases, and the strength of the electric field may rather decrease.
  • the second hole 355 may be formed in the second insulating layer 350 .
  • the second hole 355 may be located within the first hole 345 .
  • the diameter D2 of the second hole 355 may be much smaller than the diameter D1 of the first hole 345 .
  • the second hole 355 may be formed to expose a partial area of the second assembly wire 322 to the outside.
  • the second insulating layer 350 may be disposed on the entire area of the substrate 310 except for the second hole 355 .
  • the second insulating layer 350 located in the first hole 345 is provided so that the upper surface of the second assembly wiring 322 is outside. By removing it to be exposed to, a second hole 355 having a very small diameter can be formed.
  • the second hole 355 may be circular, but may have other shapes.
  • the second width w2 of the second assembly wire 322 may be smaller than the diameter D1 of the first hole 345 .
  • the second width w2 of the second assembled wiring 322 may be smaller than the diameter D11 of the semiconductor light emitting device 150 .
  • the electric field when an electric field is generated between the first assembly line 321 and the second assembly line 322 , the electric field may be more intensively distributed in the first hole 345 .
  • the semiconductor light emitting device 150 can be more easily assembled into the first hole 345 by a dielectrophoretic force generated by a more concentrated electric field. That is, the semiconductor light emitting device 150 corresponding to the shape of the first hole 345 can be easily inserted into the first hole 345 by the increased dielectrophoretic force.
  • the diameter D2 of the second hole 355 may be smaller than the second width w2 of the second assembly wire 322 .
  • the diameter D2 of the second hole 355 may be smaller than the diameter D11 of the semiconductor light emitting device 150 .
  • the second hole 355 is provided to expose a partial region of the second assembly line 322, when an electric field is generated between the first assembly line 321 and the second assembly line 322, the electric field It may be more intensively distributed in the second hole 355.
  • the semiconductor light emitting device 150 When the semiconductor light emitting device 150 is assembled into the first hole 345 during self-assembly, the second hole 355 may come into contact with a lower surface of the semiconductor light emitting device 150 . At this time, the semiconductor light emitting device 150 assembled in the first hole 345 can be more firmly fixed to the first hole 345 by the dielectrophoretic force formed by the electric field concentrated in the first hole 345. there is.
  • At least two second holes 355 may be provided. Accordingly, at least two or more second holes 355 may be positioned within the first hole 345 . For example, at least two or more second holes 355 may be formed in the second insulating layer 350 within the first hole 345 .
  • At least two or more second holes 355 may be formed adjacent to an inner side of the first hole 345 .
  • each of the 1-1st hole 345_1 and the 1-2nd hole 345_2 has an elliptical shape having a major axis and a minor axis
  • at least two second holes 355 may be positioned adjacent to the inside of each of the 1-1st hole 345_1 and the 1-2nd hole 345_2 so as to face each other in the long axis direction.
  • the 2-1 hole 355_1 is located on one side of the long axis in each of the 1-1 hole 345_1 and the 1-2 hole 345_2, and the 2-2 hole 355_2 is the 1-1 hole 355_2.
  • one side and the other side may be both ends of the long axis in each of the 1-1 hole 345_1 and the 1-2 hole 345_2, but is not limited thereto.
  • the plurality of holes 355_1 to 355_4 are located adjacent to the inside of the 1-3 holes 345_3 along the circumference. It can be.
  • the 2-1 hole 355_1 is located on the first side of the 1-3 hole 345_3, and the 2-2 hole 355_2 is located on the second side of the 1-3 hole 345_3.
  • the 2-3 hole 355_3 is located on the third side of the 1-3 hole 345_3, and the 2-4 hole 355_4 is located on the 4 side of the 1-3 hole 345_3.
  • the first side and the third side may be positioned on a horizontal line
  • the second side and the fourth side may be positioned on a vertical line, but this is not limited.
  • the 2-1st hole 355_1, the 2-2nd hole 355_2, the 2-3rd hole 355_3, and the 2-4th hole 355_4 are shown as having equal intervals from each other,
  • the 2-1 hole 355_1, 2-2 hole 355_2, 2-3 hole 355_3, and 2-4 hole 355_4 may be randomly located in the 1-3 hole 345_3. there is.
  • the blue semiconductor light emitting device 150_B having a long elliptical shape may be assembled into the 1-1 hole 345_1 having a shape corresponding to the shape of the blue semiconductor light emitting device 150_B (FIG. 17),
  • the electric field is intensively distributed in the 2-1 hole 355_1 and the 2-2 hole 355_2 in the 1-1 hole 345_1, so that the 2-1 hole 355_1 and the 2-1 hole 355_1 and the 2-1 hole 355_1 Since a large dielectrophoretic force is formed in the 2-hole 355_2, the large dielectrophoretic force formed in the 2-1 hole 355_1 and the 2-2 hole 355_2 is assembled into the 1-1 hole 345_1.
  • the blue semiconductor light emitting device 150_B may be firmly fixed to the second insulating layer 350 within the 1-1st hole 345_1.
  • the blue semiconductor light emitting device 150_B is not biased to one side. It may be positioned in the 1-1 hole (345_1) without.
  • the green semiconductor light emitting device 150_G having a shorter elliptical shape may be assembled into the first-second hole 345_2 having a shape corresponding to that of the green semiconductor light emitting device 150_G (FIG. 19).
  • the electric field is intensively distributed in the 2-1 hole 355_1 and the 2-2 hole 355_2 in the 1-2 hole 345_2, so that the 2-1 hole 355_1 and the 2-1 hole 355_2 Since a large dielectrophoretic force is formed in the 2-hole 355_2, the large dielectrophoretic force formed in the 2-1 hole 355_1 and the 2-2 hole 355_2 assembles into the 1-2 hole 345_2.
  • the green semiconductor light emitting device 150_G may be firmly fixed to the second insulating layer 350 in the first-second hole 345_2.
  • the green semiconductor light emitting device 150_G is not biased to one side. It may be positioned in the 1-2 hole (345_2) without.
  • the red semiconductor light emitting device 150_R having a circular shape may be assembled into first to third holes 345_3 having a shape corresponding to the shape of the red semiconductor light emitting device 150_R (FIG. 21).
  • the electric field is intensively distributed in the 2-1 holes 355_1 to 2-4 holes 355_4 in the 1-3 holes 345_3, so that the 2-1 holes 355_1 to 2-1 Since a large dielectrophoretic force is formed in the 4 holes 355_4, the large dielectrophoretic force formed in the 2-1 holes 355_1 to 2-4 holes 355_4 is assembled into the 1-3 holes 345_3.
  • the red semiconductor light emitting device 150_R may be firmly fixed to the second insulating layer 350 in the 1-3 holes 345_3.
  • the red semiconductor light emitting device 150_R is not biased to one side. It may be positioned right in the 1-3 holes 345_3.
  • the 1-1 hole 345_1, the 1-2 hole 345_2, and the 1-3 hole 345_3 may be located in each of the first-first hole 345_1, the first-second hole 345_2, and the first-third hole 345_3.
  • a 1-1 hole 345_1 in which a part of the green semiconductor light emitting device 150_G having a less elongated ellipse has a shape corresponding to the elongated ellipse of the blue semiconductor light emitting device 150_B. can be placed on As shown in FIG. 18C , a portion of the red semiconductor light emitting device 150_R having a circular shape may be positioned on the 1-1 hole 345_1 having a shape corresponding to the long elliptical shape of the blue semiconductor light emitting device 150_B. there is.
  • the electric field is intensively distributed in the 2-1 hole 355_1 and the 2-2 hole 355_2 so that the 2-1 hole 355_1 and the 2-2 hole 355_2 are more A large dielectrophoretic force can be formed.
  • the 2-1st hole 355_1 and the 2-2nd hole 355_2 located in the 1-1st hole 345_1 both part of the green semiconductor light emitting device 150_G and part of the red semiconductor light emitting device 150_R Since it does not vertically overlap with , neither a part of the green semiconductor light emitting device 150_G nor a part of the red semiconductor light emitting device 150_R is assembled into the 1-1 hole 345_1 . Furthermore, as shown in FIG.
  • the green semiconductor light emitting device 150_G or the red semiconductor light emitting device 150_R located on the 1-1 hole 345_1 does not stay on the 1-1 hole 345_1 for a long time and is immediately moved to another location.
  • the blue semiconductor light emitting device 150_B having a shape corresponding to the shape of the 1-1 hole 345_1 may be assembled to fundamentally prevent assembly defects.
  • a first-second hole 345_2 in which a part of the blue semiconductor light emitting device 150_B having an elongated ellipse has a shape corresponding to the less elongated ellipse of the green semiconductor light emitting device 150_G. can be placed on As shown in FIG. 19C , a portion of the red semiconductor light emitting device 150_R having a circular shape may be positioned on the first-second hole 345_2 having a shape corresponding to the less elongated ellipse of the green semiconductor light emitting device 150_G. can
  • the electric field is intensively distributed in the 2-1 hole 355_1 and the 2-2 hole 355_2 so that the 2-1 hole 355_1 and the 2-2 hole 355_2 are more A large dielectrophoretic force can be formed.
  • the dielectrophoresis force is also very weak or non-existent because the electric field intensity is weak or not on the upper layer of the first hole 345 or thereon. Therefore, as shown in FIGS.
  • the dielectrophoretic force is weak or absent at the position where the blue semiconductor light emitting element 150_B or the red semiconductor light emitting element 150_R is located, for example, the b position or the c position, blue Since the semiconductor light emitting element 150_B or the red semiconductor light emitting element 150_R cannot be assembled into the 1-2 hole 345_2 and cannot stay on the 1-2 hole 345_2 for a long time and is moved to another place, the first Only the green semiconductor light emitting device 150_G having a shape corresponding to the shape of the 1-2 hole 345_2 is assembled to the 1-2 hole 345_2 to fundamentally prevent assembly defects. .
  • a part of the blue semiconductor light emitting element 150_B having an elongated ellipse and a part of the green semiconductor light emitting element 150_G having a less elongated ellipse have a shape corresponding to a circular first- It may be located on the 3 hole (345_3).
  • the electric field is intensively distributed in the 2-1 hole 355_1 and the 2-2 hole 355_2 so that the 2-1 hole 355_1 and the 2-2 hole 355_2 are more A large dielectrophoretic force can be formed.
  • the dielectrophoresis force is also very weak or non-existent because the electric field intensity is weak or not on the upper layer of the first hole 345 or thereon. Therefore, as shown in FIGS.
  • the dielectrophoretic force is weak or absent at the location where the blue semiconductor light emitting device 150_B or the green semiconductor light emitting device 150_G is located, for example, the b or c location, blue Since the semiconductor light emitting element 150_B or the green semiconductor light emitting element 150_G cannot be assembled into the 1-3 holes 345_3 and cannot stay on the 1-3 holes 345_3 for a long time and is moved to another place, the first In the 1-3 hole 345_3, only the red semiconductor light emitting device 150_R having a shape corresponding to the shape of the 1-3 hole 345_3 is assembled to fundamentally prevent assembly defects. .
  • FIG. 23 is a plan view illustrating a display device manufactured by a post process after the semiconductor light emitting device of FIG. 12 is assembled. 24 is a cross-sectional view taken along line D-E of FIG. 23;
  • the semiconductor light emitting device 150 may be assembled into the first hole 345 on the substrate 310 by performing a self-assembly process.
  • the blue semiconductor light emitting device 150_B is disposed in each of the plurality of 1-1 holes 345_1 on the 2-1st assembly line 322_1, and the plurality of first 1-1 holes 345_B on the 2-2nd assembly line 322_2.
  • a green semiconductor light emitting element 150_G is disposed in each of the -2 holes 345_2, and a red semiconductor light emitting element 150_R is disposed in each of the plurality of 1-3 holes 345_3 on the 2-3 assembly wiring 322_3. It can be.
  • the display device 300' includes a third insulating layer 360, first electrode wires 371_B, 371_G, and 371_R, second electrode wires 372, data It may include wires 361_B, 361_G, and 361_R and a common data wire 361_C.
  • a third insulating layer 360 may be disposed on the second insulating layer 350 and the semiconductor light emitting device 150 .
  • the third insulating layer 360 may be disposed on the barrier rib 340 .
  • the third insulating layer 360 may be disposed not only on the barrier rib 340 but also within the assembly hole 345 and on the semiconductor light emitting devices 150 and 150 .
  • the third insulating layer 360 may protect the semiconductor light emitting device 150 . That is, the third insulating layer 360 may protect the semiconductor light emitting device 150 from external moisture or foreign substances. The third insulating layer 360 may protect the first connector 350 from moisture or conductive foreign substances.
  • the third insulating layer 360 may be formed to be thick and may be a planarization film that flattens an upper surface. Accordingly, a layer disposed on the upper surface of the third insulating layer 360, for example, the first electrode wirings 371_B, 371_G, and 371_R and the second electrode wiring 372 or another insulating layer can be easily formed.
  • the third insulating layer 360 may be formed of an organic material or an inorganic material.
  • the third insulating layer 360 may be formed of a resin material such as epoxy or silicon.
  • the second insulation may be made of a material having excellent light transmittance so that the light from the semiconductor light emitting device 150 is well transmitted.
  • the third insulating layer 360 may include scattering particles so that light from the semiconductor light emitting device 150 is well scattered.
  • scattering particles may be included in the third insulating layer 360 corresponding to the semiconductor light emitting device 150 in each pixel (PX in FIG. 2 ), but this is not limited thereto.
  • the third insulating layer 360 may be formed on the entire area of the substrate 310 regardless of the sub-pixels (PX1, PX2, and PX3 in FIG. 2).
  • the first electrode wires 371_B, 371_G, and 371_R and the second electrode wires 372 may be electrically connected to the semiconductor light emitting device 150 through the third insulating layer 360 .
  • the semiconductor light emitting device 150 may include a blue semiconductor light emitting device 150_B, a green semiconductor light emitting device 150_G, and a red semiconductor light emitting device 150_R.
  • the second electrode wiring 372 may be a common electrode wiring commonly connected to each of the blue semiconductor light emitting device 150_B, the green semiconductor light emitting device 150_G, and the red semiconductor light emitting device 150_R.
  • the blue electrode wiring 371_B is electrically connected to one side of the blue semiconductor light emitting device 150_B through the third insulating layer 360, and the second electrode wiring 372 is electrically connected through the third insulating layer 360. It may be electrically connected to the other side of the blue semiconductor light emitting device 150_B.
  • the green electrode wire 371_G is electrically connected to one side of the green semiconductor light emitting device 150_G through the third insulating layer 360
  • the second electrode wire 372 is electrically connected through the third insulating layer 360. It may be electrically connected to the other side of the green semiconductor light emitting device 150_G.
  • the red electrode wire 371_R is electrically connected to one side of the red semiconductor light emitting element 150_R through the third insulating layer 360, and the second electrode wire 372 is electrically connected through the third insulating layer 360. It may be electrically connected to the other side of the red semiconductor light emitting device 150_R.
  • the semiconductor light emitting device 150 may be a flip chip type semiconductor light emitting device or a vertical type semiconductor light emitting device.
  • the semiconductor light emitting device 150 is a horizontal type semiconductor light emitting device
  • one side and the other side may be positioned above the semiconductor light emitting device 150 .
  • the first electrode wirings 371_B, 371_G, and 371_R are electrically connected to a portion of the upper surface of the first conductivity type semiconductor layer of the semiconductor light emitting device 150
  • the second electrode wiring 372 is the semiconductor light emitting device 150. may be electrically connected to a portion of the upper surface of the second conductivity type semiconductor layer.
  • the first electrode wirings 371_B, 371_G, and 371_R are electrically connected to a portion of the upper surface of the first conductivity type semiconductor layer, and the second electrode wiring 372 ) may be electrically connected to the lower surface of the second conductivity type semiconductor layer of the semiconductor light emitting device 150 .
  • the first conductivity type semiconductor layer may include an n-type dopant, and the second conductivity type semiconductor layer may include a p-type semiconductor layer, but is not limited thereto.
  • the lower side of the semiconductor light emitting device 150 that is, the first conductive semiconductor layer and the second assembly wiring 322 are electrically connected through a separate process
  • the second electrode wiring 372 is the third insulating layer. It may be electrically connected to the second assembly wire 322 through 360 .
  • the second electrode wiring 372 may be electrically connected to the side surface of the first conductivity type semiconductor layer of the semiconductor light emitting device 150 through the third insulating layer 360 .
  • a connection electrode may be disposed in a space in the first hole 345 except for the semiconductor light emitting device 150, and the second electrode wire 372 may be electrically connected to the connection electrode through the third insulating layer 360.
  • the data wires 361_B, 361_G, and 361_R may be electrically connected to the first electrode wires 371_B, 371_G, and 371_R, and the common data wire 361_C may be electrically connected to the second electrode wire 372.
  • the data lines 361_B, 361_G, and 361_R and the common data line 361_C may be disposed on the same layer, and the first electrode wires 371_B, 371_G, and 371_R and the second electrode wire 372 may be disposed on the same layer.
  • the data wires 361_B, 361_G, and 361_R and the first electrode wires 371_B, 371_G, and 371_R may be disposed on different layers and electrically connected to each other through a first contact hole.
  • the common data wire 361_C and the second electrode wire 372 may be disposed on different layers and electrically connected to each other through a first contact hole.
  • a fourth insulating layer (not shown) may be disposed on the first electrode wires 371_B, 371_G, and 371_R and the second electrode wires 372 .
  • Data lines 361_B, 361_G, and 361_R and a common data line 361_C may be disposed on the fourth cutout layer.
  • a first contact hole and a second contact hole may be formed in the fourth insulating layer.
  • the data wires 361_B, 361_G, and 361_R are electrically connected to the first electrode wires 371_B, 371_G, and 371_R through the first contact hole of the fourth insulating layer
  • the common data wire 361_C is the fourth insulating layer. It may be electrically connected to the second electrode wire 372 through the second contact hole of the insulating layer.
  • the data line may include a blue data line 361_B, a green data line 361_G, and a red data line 361_R.
  • the blue data wire 361_B is electrically connected to the blue electrode wire 371_B
  • the green data wire 361_G is electrically connected to the green electrode wire 371_G
  • the red data wire 361_R is electrically connected to the red electrode. It may be electrically connected to the wire 371_R.
  • the blue data line 361_B, the green data line 361_G, and the red data line 361_R may be disposed parallel to each other.
  • the blue data line 361_B, the green data line 361_G, and the red data line 361_R may be long along the Y direction.
  • the blue data line 361_B, the green data line 361_G, and the red data line 361_R may be disposed to cross the first assembly line 321 and the second assembly line 322 .
  • first electrode wires 371_B, 371_G, and 371_R and the second electrode wires 372 may be disposed parallel to each other.
  • first electrode wires 371_B, 371_G, and 371_R and the second electrode wires 372 may be disposed long along the X direction.
  • first electrode wires 371_B, 371_G, and 371_R and the second electrode wires 372 may be disposed parallel to the first assembly wires 321 and the second assembly wires 322 .
  • the first assembling wire 321 and the second assembling wire 322 may be provided to assemble the semiconductor light emitting device 150 into the first hole 345 using dielectrophoretic force.
  • the data wires 361_B, 361_G, and 361_R, the common data wire 361_C, the first electrode wires 371_B, 371_G, and 371_R, and the second electrode wire 372 form a blue semiconductor light emitting element 150_B, green While each of the semiconductor light emitting element 150_G and the red semiconductor light emitting element 150_R independently emits light, the current intensity of each of the blue semiconductor light emitting element 150_B, the green semiconductor light emitting element 150_G, and the red semiconductor light emitting element 150_R is It may be provided to obtain different luminance by adjusting.
  • the layout of the data wires 361_B, 361_G, and 361_R, the common data wires 361_C, the first electrode wires 371_B, 371_G, and 371_R, and the second electrode wires 372 shown in the drawing is only an example, and various Layout design is possible.
  • 25 is a cross-sectional view of a display device according to a second embodiment. 26 shows an electric field distribution during self-assembly in the display panel according to the second embodiment.
  • the second embodiment is the same as the first embodiment except for the third assembly hole 365 .
  • the same reference numerals are given to components having the same shape, structure and/or function as those in the first embodiment, and detailed descriptions are omitted.
  • the display device 300A includes a substrate 310, a plurality of first assembly lines 321, a plurality of second assembly lines 322, and a first insulating layer 340. , the second insulating layer 350, the first hole 345, the second hole 355 and the third hole 365, and the semiconductor light emitting device 150 may be included.
  • a first hole 345 is formed in the first insulating layer 340 on the second assembly wire 322, and at least two or more second holes 355 are formed in the second insulating layer 350 in the first hole 345. ) can be formed.
  • the electric field is intensively distributed in at least two or more second holes 355 in the first hole 345 on the second assembly wiring 322, and the upper side of the first hole 345, that is, At the position b or c (FIG. 26), the electric field strength is weak or absent, so the dielectrophoretic force is also weak or absent.
  • the semiconductor light emitting device 150 having a shape corresponding to the shape of the first hole 345 is assembled to the first hole 345, and the assembled semiconductor light emitting device 150 has at least two second holes. It can be firmly fixed by the larger dielectrophoretic force formed in 355, so that the assembly rate can be improved.
  • the semiconductor light emitting device 150 that is different from the shape of the first hole 345 cannot be assembled into the first hole 345, and the dielectrophoretic force is weak or not on the upper side of the first hole 345, so that the semiconductor light emitting device (150) can be immediately separated to another place can prevent assembly failure due to overlapping assembly.
  • a third hole 365 may be formed in the first insulating layer 340 on the first assembly line 321 .
  • the diameter of the third hole 365 may be smaller than the first width (w1 in FIG. 12 ) of the first assembly line 321 , but is not limited thereto.
  • the second insulating layer 350 may contact the first assembly line 321 .
  • a third hole 365 is formed in the first insulating layer 340 on the first assembly wiring 321, and the second insulating layer 350 is formed in the third hole 365 with the first assembly wiring 321.
  • the embodiment may be adopted in the display field for displaying images or information.
  • the embodiment can be adopted in the field of display displaying images or information using a semiconductor light emitting device.
  • the semiconductor light-emitting device may be a micro-level semiconductor light-emitting device or a nano-level semiconductor light-emitting device.

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Abstract

Un dispositif d'affichage comprend : un substrat ; une pluralité de premiers câblages d'assemblage sur le substrat ; une pluralité de seconds câblages d'assemblage sur le substrat ; une première couche isolante disposée sur le substrat et ayant des premiers trous sur les surfaces supérieures respectives de la pluralité de seconds câblages d'assemblage ; et des dispositifs électroluminescents à semi-conducteur dans les premiers trous respectifs. Le mode de réalisation permet d'augmenter le taux d'assemblage et d'empêcher des défauts d'assemblage.
PCT/KR2021/010452 2021-08-06 2021-08-06 Dispositif d'affichage WO2023013801A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020247002565A KR20240037972A (ko) 2021-08-06 2021-08-06 디스플레이 장치
PCT/KR2021/010452 WO2023013801A1 (fr) 2021-08-06 2021-08-06 Dispositif d'affichage
US17/518,391 US20230042942A1 (en) 2021-08-06 2021-11-03 Display device

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Citations (5)

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US20030182794A1 (en) * 2002-01-24 2003-10-02 Fonstad Clifton G. Method and system for field assisted statistical assembly of wafers
KR20190104276A (ko) * 2019-08-20 2019-09-09 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
KR20200026683A (ko) * 2019-06-28 2020-03-11 엘지전자 주식회사 디스플레이 장치의 제조방법 및 디스플레이 장치 제조를 위한 기판
KR20200030514A (ko) * 2020-03-02 2020-03-20 엘지전자 주식회사 디스플레이 장치 제조용 기판 및 이를 이용한 디스플레이 장치의 제조방법
KR20200099037A (ko) * 2019-02-13 2020-08-21 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030182794A1 (en) * 2002-01-24 2003-10-02 Fonstad Clifton G. Method and system for field assisted statistical assembly of wafers
KR20200099037A (ko) * 2019-02-13 2020-08-21 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조 방법
KR20200026683A (ko) * 2019-06-28 2020-03-11 엘지전자 주식회사 디스플레이 장치의 제조방법 및 디스플레이 장치 제조를 위한 기판
KR20190104276A (ko) * 2019-08-20 2019-09-09 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
KR20200030514A (ko) * 2020-03-02 2020-03-20 엘지전자 주식회사 디스플레이 장치 제조용 기판 및 이를 이용한 디스플레이 장치의 제조방법

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