WO2022265139A1 - Appareil d'affichage - Google Patents

Appareil d'affichage Download PDF

Info

Publication number
WO2022265139A1
WO2022265139A1 PCT/KR2021/007678 KR2021007678W WO2022265139A1 WO 2022265139 A1 WO2022265139 A1 WO 2022265139A1 KR 2021007678 W KR2021007678 W KR 2021007678W WO 2022265139 A1 WO2022265139 A1 WO 2022265139A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
adhesive layer
conductive adhesive
electrode
semiconductor light
Prior art date
Application number
PCT/KR2021/007678
Other languages
English (en)
Korean (ko)
Inventor
최환준
이병준
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to PCT/KR2021/007678 priority Critical patent/WO2022265139A1/fr
Publication of WO2022265139A1 publication Critical patent/WO2022265139A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the embodiment relates to a display device.
  • a display device displays a high-quality image by using a self-light emitting device such as a light emitting diode as a light source of a pixel.
  • a self-light emitting device such as a light emitting diode as a light source of a pixel.
  • Light emitting diodes exhibit excellent durability even under harsh environmental conditions, and are in the limelight as a light source for next-generation display devices because of their long lifespan and high luminance.
  • a stretchable display device that can be stretched in a specific direction using a substrate having stretch characteristics and can be changed into various shapes is attracting attention as a next-generation display device.
  • the substrate 5 is stretched or contracted in all directions.
  • the substrate 5 is defined by a display area DA including a plurality of pixels PX1 to PX4 and a non-display area NDA, which is an area other than the plurality of pixels PX1 to PX4 .
  • stretchability may be improved by minimizing the number of layers in the non-display area NDA.
  • a plurality of light emitting diodes are attached to a substrate using an adhesive material. For example, after an adhesive material is applied over the entire area of the substrate, a plurality of light emitting diodes are attached to the substrate using the adhesive material.
  • conductive balls are included in the adhesive material, and since these conductive balls must be applied to the entire area of the substrate, manufacturing costs increase.
  • an adhesive material is unnecessarily applied to an area other than an area for attaching light emitting diodes, resulting in severe material waste, which leads to an increase in material cost.
  • Embodiments are aimed at solving the foregoing and other problems.
  • Another object of the embodiments is to provide a display device capable of improving stretching characteristics.
  • Another object of the embodiments is to provide a display device capable of simplifying processes.
  • Another object of the embodiments is to provide a display device that can be easily processed.
  • a semiconductor light emitting device includes a light emitting unit having a first region, a second region, and a third region between the first region and the second region; a first electrode on the first region of the light emitting unit; a second electrode on the second region of the light emitting unit; and a conductive adhesive layer on the first electrode and the second electrode, wherein the conductive adhesive layer comprises: a base member; and a plurality of conductive balls fixed to the base member at equal intervals.
  • a display device has a display area including a plurality of pixels and a non-display area between the plurality of pixels, and the plurality of pixels have first and second pixels. 2 pad electrodes; and a plurality of semiconductor light emitting elements in the plurality of pixels, each of the plurality of semiconductor light emitting elements having a first region, a second region, and a light emitting unit having a third region between the first region and the second region.
  • the conductive adhesive layer 154 is formed only on the light emitting part 151, and the conductive adhesive layer 154 is not formed on the wafer 1000 between the light emitting parts 151. Therefore, when the plurality of red semiconductor light emitting devices 150_R on the wafer 1000 are transferred to another member ( 1040 in FIG. 20 ) by a subsequent process, the corresponding red semiconductor light emitting devices 150_R are easily removed from the wafer 1000. can be separated Through the same manufacturing process, the conductive adhesive layer 154 may be formed only on the light emitting portion 151 of the green semiconductor light emitting device 150_G or the blue semiconductor light emitting device 150_B.
  • the conductive adhesive layer 154 of the semiconductor light emitting devices 150_R, 150_G, and 150_B is shown in FIG. Since each pixel PX1 to PX4 of the first substrate 301 is disposed only in the rigid region and no conductive adhesive layer 154 is disposed in the soft region, the elongation property is improved and the manufacturing cost is reduced, thereby contributing to product commercialization. can
  • the semiconductor light emitting devices 150_R, 150_G, and 150_B are provided with a conductive adhesive layer 154 having a uniform thickness in advance, and the conductive adhesive layer 154 having an optimal thickness that is uniform and easy to electrically contact is used. Since the semiconductor light emitting devices 150_R, 150_G, and 150_B are disposed in each of the pixels PX1 to PX4, electrical contact failure of the conductive ball 156 can be prevented.
  • a plurality of conductive balls 156 are fixed at equal intervals in the conductive adhesive layer 154 provided in the semiconductor light emitting devices 150_R, 150_G, and 150_B, so that the semiconductor light emitting devices 150_R .
  • the first electrode 152 and the first substrate ( 301) or between the second electrode 153 of the semiconductor light emitting devices 150_R, 150_G, and 150_B and the first pad electrode 305 on the first substrate 301 is prevented from being shorted can do
  • 1 shows a general stretchable display device.
  • FIG. 2 illustrates a living room of a house in which a display device 100 according to an embodiment is disposed.
  • FIG. 3 is a schematic block diagram of a display device according to an exemplary embodiment.
  • FIG. 4 is a circuit diagram showing an example of a pixel of FIG. 3 .
  • FIG. 5 is a plan view showing the display panel of FIG. 3 in detail.
  • FIG. 6 is an enlarged view of a first panel area in the display device of FIG. 2 .
  • FIG. 7 and 8 are diagrams illustrating examples in which a light emitting device according to an embodiment is transferred to a substrate by a transfer method.
  • FIG. 9 is a schematic cross-sectional view of the display panel of FIG. 3 .
  • FIG. 10 is a plan view illustrating the display device according to the first embodiment.
  • FIG. 11 is a cross-sectional view of the display device according to the first embodiment.
  • FIG. 12 is a cross-sectional view of the semiconductor light emitting device according to the first embodiment.
  • FIG. 13 is a plan view illustrating a semiconductor light emitting device according to an embodiment.
  • FIG. 14 to 16 show a method of manufacturing a semiconductor light emitting device according to an embodiment according to a first manufacturing process.
  • 17 and 18 show a method of manufacturing a semiconductor light emitting device according to an embodiment according to a second manufacturing process.
  • 19 to 24 illustrate manufacturing processes of a display device according to an embodiment.
  • 25 is a cross-sectional view of a semiconductor light emitting device according to a second embodiment.
  • 26 is a cross-sectional view of a display device according to a second embodiment.
  • FIG. 27 is a cross-sectional view of a display device according to a third embodiment.
  • the display devices described in this specification include mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation devices, slate PCs, Tablet PCs, ultra-books, digital TVs, desktop computers, and the like may be included.
  • PDAs personal digital assistants
  • PMPs portable multimedia players
  • navigation devices slate PCs, Tablet PCs, ultra-books, digital TVs, desktop computers, and the like may be included.
  • slate PCs slate PCs
  • Tablet PCs ultra-books
  • digital TVs desktop computers, and the like
  • the configuration according to the embodiment described in this specification can be applied to a device capable of displaying even a new product type to be developed in the future.
  • FIG. 2 illustrates a living room of a house in which a display device 100 according to an embodiment is disposed.
  • the display device 100 of the embodiment can display the status of various electronic products such as the washing machine 101, the robot cleaner 102, and the air purifier 103, can communicate with each electronic product based on IOT, and can provide user It is also possible to control each electronic product based on the setting data of the .
  • the display device 100 may include a flexible display or a stretchable display manufactured on a thin and flexible substrate.
  • a flexible display can be bent or rolled like paper while maintaining characteristics of a conventional flat panel display.
  • a unit pixel means a minimum unit for implementing one color.
  • a unit pixel of the flexible display may be implemented by a light emitting device.
  • the light emitting device may be a Micro-LED or a Nano-LED, but is not limited thereto.
  • FIG. 3 is a block diagram schematically illustrating a display device according to an exemplary embodiment
  • FIG. 4 is a circuit diagram illustrating an example of a pixel of FIG. 3 .
  • a display device may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 and a power supply circuit 50 .
  • the display device 100 may drive a light emitting element in an active matrix (AM) method or a passive matrix (PM) method.
  • AM active matrix
  • PM passive matrix
  • the driving circuit 20 may include a data driver 21 and a timing controller 22 .
  • the display panel 10 may be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 may be formed in a circular or elliptical shape. At least one side of the display panel 10 may be formed to be bent with a predetermined curvature.
  • the display panel 10 may be divided into a display area DA and a non-display area NDA disposed around the display area DA.
  • the display area DA is an area where the pixels PX are formed to display an image.
  • the display panel 10 includes data lines (D1 to Dm, where m is an integer greater than or equal to 2), scan lines (S1 to Sn, where n is an integer greater than or equal to 2) crossing the data lines (D1 to Dm), and a high potential voltage. It may include pixels PXs connected to a high-potential voltage line supplied thereto, a low-potential voltage line supplied with a low-potential voltage, data lines D1 to Dm, and scan lines S1 to Sn.
  • Each of the pixels PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .
  • the first sub-pixel PX1 emits light of a first color of a first main wavelength
  • the second sub-pixel PX2 emits light of a second color of a second main wavelength
  • the third sub-pixel PX3 emits light of a second color.
  • a third color light having a third main wavelength may be emitted.
  • the first color light may be red light
  • the second color light may be green light
  • the third color light may be blue light, but are not limited thereto.
  • FIG. 3 it is illustrated that each of the pixels PX includes three sub-pixels, but is not limited thereto. That is, each of the pixels PX may include four or more sub-pixels.
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 includes at least one of the data lines D1 to Dm, at least one of the scan lines S1 to Sn, and a high voltage signal. It can be connected to the above voltage line.
  • the first sub-pixel PX1 may include light emitting elements LD, a plurality of transistors for supplying current to the light emitting elements LD, and at least one capacitor Cst.
  • each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include only one light emitting element LD and at least one capacitor Cst. may be
  • Each of the light emitting elements LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers, and a second electrode.
  • the first electrode may be an anode electrode and the second electrode may be a cathode electrode, but is not limited thereto.
  • the plurality of transistors may include a driving transistor DT supplying current to the light emitting elements LD and a scan transistor ST supplying a data voltage to a gate electrode of the driving transistor DT, as shown in FIG. 4 .
  • the driving transistor DT has a gate electrode connected to the source electrode of the scan transistor ST, a source electrode connected to a high potential voltage line to which a high potential voltage is applied, and a drain connected to the first electrodes of the light emitting elements LD. electrodes may be included.
  • the scan transistor ST has a gate electrode connected to the scan line (Sk, k is an integer satisfying 1 ⁇ k ⁇ n), a source electrode connected to the gate electrode of the driving transistor DT, and data lines Dj, j an integer that satisfies 1 ⁇ j ⁇ m).
  • the capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT.
  • the storage capacitor Cst charges a difference between the gate voltage and the source voltage of the driving transistor DT.
  • the driving transistor DT and the scan transistor ST may be formed of thin film transistors.
  • the driving transistor DT and the scan transistor ST have been mainly described as being formed of P-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), but the present invention is not limited thereto.
  • the driving transistor DT and the scan transistor ST may be formed of N-type MOSFETs. In this case, positions of the source and drain electrodes of the driving transistor DT and the scan transistor ST may be changed.
  • each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 includes one driving transistor DT, one scan transistor ST, and one capacitor ( 2T1C (2 Transistor - 1 capacitor) having Cst) is illustrated, but the present invention is not limited thereto.
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include a plurality of scan transistors ST and a plurality of capacitors Cst.
  • the second sub-pixel PX2 and the third sub-pixel PX3 may be expressed with substantially the same circuit diagram as the first sub-pixel PX1 , a detailed description thereof will be omitted.
  • the driving circuit 20 outputs signals and voltages for driving the display panel 10 .
  • the driving circuit 20 may include a data driver 21 and a timing controller 22 .
  • the data driver 21 receives digital video data DATA and a source control signal DCS from the timing controller 22 .
  • the data driver 21 converts the digital video data DATA into analog data voltages according to the source control signal DCS and supplies them to the data lines D1 to Dm of the display panel 10 .
  • the timing controller 22 receives digital video data DATA and timing signals from the host system.
  • the timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock.
  • the host system may be an application processor of a smart phone or tablet PC, a monitor, a system on chip of a TV, and the like.
  • the timing controller 22 generates control signals for controlling operation timings of the data driver 21 and the scan driver 30 .
  • the control signals may include a source control signal DCS for controlling the operation timing of the data driver 21 and a scan control signal SCS for controlling the operation timing of the scan driver 30 .
  • the driving circuit 20 may be disposed in the non-display area NDA provided on one side of the display panel 10 .
  • the driving circuit 20 may be formed of an integrated circuit (IC) and mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method.
  • COG chip on glass
  • COP chip on plastic
  • ultrasonic bonding method The present invention is not limited to this.
  • the driving circuit 20 may be mounted on a circuit board (not shown) instead of the display panel 10 .
  • the data driver 21 may be mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method, and the timing controller 22 may be mounted on a circuit board. there is.
  • COG chip on glass
  • COP chip on plastic
  • the scan driver 30 receives the scan control signal SCS from the timing controller 22 .
  • the scan driver 30 generates scan signals according to the scan control signal SCS and supplies them to the scan lines S1 to Sn of the display panel 10 .
  • the scan driver 30 may include a plurality of transistors and be formed in the non-display area NDA of the display panel 10 .
  • the scan driver 30 may be formed as an integrated circuit, and in this case, it may be mounted on a gate flexible film attached to the other side of the display panel 10 .
  • the circuit board may be attached to pads provided on one edge of the display panel 10 using an anisotropic conductive film. Due to this, the lead lines of the circuit board may be electrically connected to the pads.
  • the circuit board may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. The circuit board may be bent under the display panel 10 . Accordingly, one side of the circuit board may be attached to one edge of the display panel 10 and the other side may be disposed under the display panel 10 and connected to a system board on which a host system is mounted.
  • the power supply circuit 50 may generate voltages necessary for driving the display panel 10 from the main power supplied from the system board and supply the voltages to the display panel 10 .
  • the power supply circuit 50 generates a high potential voltage (VDD) and a low potential voltage (VSS) for driving the light emitting elements (LD) of the display panel 10 from the main power supply to generate the display panel 10. of high-potential voltage lines and low-potential voltage lines.
  • the power supply circuit 50 may generate and supply driving voltages for driving the driving circuit 20 and the scan driving unit 30 from the main power.
  • FIG. 5 is a plan view showing the display panel of FIG. 3 in detail.
  • data pads DP1 to DPp, where p is an integer greater than or equal to 2
  • floating pads FP1 and FP2 floating pads FP1 and FP2
  • power pads PP1 and PP2 floating lines FL1 and FL2
  • low potential voltage line VSSL low potential voltage line VSSL
  • data lines D1 to Dm first pad electrodes 210 and second pad electrodes 220 are shown.
  • data lines D1 to Dm, first pad electrodes 210, second pad electrodes 220, and pixels PX are provided in the display area DA of the display panel 10. can be placed.
  • the data lines D1 to Dm may extend long in the second direction (Y-axis direction). One sides of the data lines D1 to Dm may be connected to the driving circuit ( 20 in FIG. 3 ). For this reason, the data voltages of the driving circuit 20 may be applied to the data lines D1 to Dm.
  • the first pad electrodes 210 may be spaced apart from each other at predetermined intervals in the first direction (X-axis direction). For this reason, the first pad electrodes 210 may not overlap the data lines D1 to Dm.
  • the first pad electrodes 210 disposed on the right edge of the display area DA may be connected to the first floating line FL1 in the non-display area NDA.
  • the first pad electrodes 210 disposed on the left edge of the display area DA may be connected to the second floating line FL2 in the non-display area NDA.
  • Each of the second pad electrodes 220 may extend long in the first direction (X-axis direction). For this reason, the second pad electrodes 220 may overlap the data lines D1 to Dm. Also, the second pad electrodes 220 may be connected to the low potential voltage line VSSL in the non-display area NDA. For this reason, the low potential voltage of the low potential voltage line VSSL may be applied to the second pad electrodes 220 .
  • a pad part PA, a driving circuit 20, a first floating line FL1, a second floating line FL2, and a low potential voltage line VSSL are disposed in the non-display area NDA of the display panel 10. It can be.
  • the cap head part PA may include data pads DP1 to DPp, floating pads FP1 and FP2, and power pads PP1 and PP2.
  • the pad part PA may be disposed on one edge of the display panel 10, for example, on the lower edge.
  • the data pads DP1 to DPp, the floating pads FP1 and FP2, and the power pads PP1 and PP2 may be disposed side by side in the first direction (X-axis direction) of the pad part PA.
  • a circuit board may be attached to the data pads DP1 to DPp, the floating pads FP1 and FP2, and the power pads PP1 and PP2 using an anisotropic conductive film. Accordingly, the circuit board, the data pads DP1 to DPp, the floating pads FP1 and FP2, and the power pads PP1 and PP2 may be electrically connected.
  • the driving circuit 20 may be connected to the data pads DP1 to DPp through link lines.
  • the driving circuit 20 may receive digital video data DATA and timing signals through the data pads DP1 to DPp.
  • the driving circuit 20 may convert the digital video data DATA into analog data voltages and supply them to the data lines D1 to Dm of the display panel 10 .
  • the low potential voltage line VSSL may be connected to the first power pad PP1 and the second power pad PP2 of the pad part PA.
  • the low potential voltage line VSSL may extend long in the second direction (Y-axis direction) in the non-display area NDA outside the left and right sides of the display area DA.
  • the low potential voltage line VSSL may be connected to the second pad electrode 220 . Due to this, the low potential voltage of the power supply circuit 50 is applied to the second pad electrode 220 through the circuit board, the first power pad PP1 , the second power pad PP2 and the low potential voltage line VSSL. may be authorized.
  • the first floating line FL1 may be connected to the first floating pad FP1 of the pad part PA.
  • the first floating line FL1 may extend long in the second direction (Y-axis direction) in the non-display area NDA outside the left and right outside of the display area DA.
  • the first floating pad FP1 and the first floating line FL1 may be dummy pads and dummy lines to which no voltage is applied.
  • the second floating line FL2 may be connected to the second floating pad FP2 of the pad part PA.
  • the first floating line FL1 may extend long in the second direction (Y-axis direction) in the non-display area NDA outside the left and right outside of the display area DA.
  • the second floating pad FP2 and the second floating line FL2 may be dummy pads and dummy lines to which no voltage is applied.
  • the first floating line FL1 and the second floating line FL2 are lines for applying a ground voltage during a manufacturing process, and no voltage may be applied in a completed display device. Alternatively, ground voltage may be applied to the first floating line FL1 and the second floating line FL2 to prevent static electricity or to drive the light emitting elements 310, 320, and 330 in the finished display device.
  • FIG. 6 is an enlarged view of a first panel area in the display device of FIG. 2 .
  • the display device 100 of the embodiment may be manufactured by mechanically and electrically connecting a plurality of panel areas such as the first panel area A1 by tiling.
  • the first panel area A1 may include a plurality of light emitting devices 150 arranged for each unit pixel (PX in FIG. 3 ).
  • the unit pixel PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .
  • a plurality of red semiconductor light emitting elements 150R are disposed in the first sub-pixel PX1
  • a plurality of green semiconductor light emitting elements 150G are disposed in the second sub-pixel PX2
  • a plurality of blue semiconductor light emitting elements 150B may be disposed in the third sub-pixel PX3.
  • the unit pixel PX may further include a fourth sub-pixel in which no light emitting element is disposed, but is not limited thereto.
  • the light emitting device 150 may be the semiconductor light emitting devices 150_R, 150_G, and 150_B of FIG. 11 .
  • the first semiconductor light emitting device 310 is a red semiconductor light emitting device 150R
  • the second semiconductor light emitting device 320 is a green semiconductor light emitting device 150G
  • the third semiconductor light emitting device 330 is a blue semiconductor light emitting device. It may be element 150B.
  • a method of mounting the light emitting device 150 on the substrate 200 may include, for example, a self-assembly method and a transfer method (FIGS. 7 and 8).
  • FIG. 7 and 8 are diagrams illustrating examples in which a light emitting device according to an embodiment is transferred to a substrate by a transfer method.
  • a plurality of light emitting devices 150 may be attached to a substrate 1500 .
  • the substrate 1500 may be a donor substrate as an intermediate medium for mounting the light emitting device 150 on the display substrate.
  • the plurality of light emitting devices 150 manufactured on the wafer may be attached to the substrate 1500, and the plurality of light emitting devices 150 attached to the substrate 1500 may be transferred onto the display substrate.
  • the substrate 1500 as a donor substrate is described, but the substrate 1500 may be a display substrate for direct transfer of the plurality of light emitting elements 150 without passing through the donor substrate.
  • each of the plurality of light emitting elements 150 on the substrate 1500 corresponds to each pixel of the substrate 200 for a display.
  • An alignment process may be performed to do so.
  • the substrate 1500 or the display substrate 200
  • the plurality of light emitting elements 150 on the substrate 1500 are transferred to each pixel on the display substrate 200. It can be.
  • the plurality of light emitting elements 150 are attached to the display substrate 200 through a post process and the plurality of light emitting elements 150 are electrically connected to a power source, so that the plurality of light emitting elements 150 emit light to display an image. can be displayed.
  • an image may be displayed using a light emitting element.
  • the light-emitting device of the embodiment is a self-emitting device that emits light by itself when electricity is applied, and may be a semiconductor light-emitting device. Since the light emitting element of the embodiment is made of an inorganic semiconductor material, it is resistant to deterioration and has a semi-permanent lifespan, so it can contribute to realizing high-quality and high-definition images in a display device by providing stable light.
  • a display device may use a light emitting element as a light source, include a color generator on the light emitting element, and display an image by the color generator (FIG. 9).
  • the display device may display projections through a display panel in which each of a plurality of light emitting elements generating light of different colors is arranged in a pixel.
  • FIG. 9 is a schematic cross-sectional view of the display panel of FIG. 3 .
  • the display panel 10 of the embodiment may include a first substrate 40 , a light emitting unit 41 , a color generating unit 42 , and a second substrate 46 .
  • the display panel 10 of the embodiment may include more components than these, but is not limited thereto.
  • One or more insulating layers may be disposed, but is not limited thereto.
  • the first substrate 40 may support the light emitting unit 41 , the color generating unit 42 , and the second substrate 46 .
  • the first substrate 40 includes various elements as described above, for example, data lines (D1 to Dm, m is an integer greater than or equal to 2), scan lines S1 to Sn, and high potential voltage as shown in FIG. line and low potential voltage line, as shown in FIG. 4, a plurality of transistors ST and DT and at least one capacitor Cst, and as shown in FIG. 5, a first pad electrode 210 and a second pad An electrode 220 may be provided.
  • the first substrate 40 may be formed of glass or a flexible material, but is not limited thereto.
  • the light emitting unit 41 may provide light to the color generating unit 42 .
  • the light emitting unit 41 may include a plurality of light sources that emit light themselves by applying electricity.
  • the light source may include light emitting elements ( 150 in FIG. 6 , 150_R, 150_G, and 150_B in FIG. 11 ).
  • the plurality of light emitting devices 150 are separately disposed for each sub-pixel of a pixel and independently emit light by controlling each sub-pixel.
  • the plurality of light emitting elements 150 may be disposed regardless of pixel division and simultaneously emit light from all sub-pixels.
  • the light emitting device 150 of the embodiment may emit blue light, but is not limited thereto.
  • the light emitting device 150 of the embodiment may emit white light or purple light.
  • the light emitting device 150 may emit red light, green light, and blue light for each sub-pixel.
  • a red semiconductor light emitting element emitting red light is disposed in a first sub-pixel, that is, a red sub-pixel
  • a green semiconductor light emitting element emitting green light is disposed in a second sub-pixel, ie, a green sub-pixel.
  • a blue semiconductor light emitting device emitting blue light may be disposed in the third sub-pixel, that is, the blue sub-pixel.
  • each of the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may include a group II-IV compound or a group III-V compound, but is not limited thereto.
  • the group III-V compound may be a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof;
  • it may be selected from the group consisting of quaternary compounds selected from the group consisting of AlGaInP, GaAlNAs, GaAlNSb, GaAlPAs, GaN
  • the color generating unit 42 may generate light of a different color from the light provided by the light emitting unit 41 .
  • the color generator 42 may include a first color generator 43 , a second color generator 44 , and a third color generator 45 .
  • the first color generating unit 43 corresponds to the first sub-pixel PX1 of the pixel
  • the second color generating unit 44 corresponds to the second sub-pixel PX2 of the pixel
  • the third color generating unit ( 45) may correspond to the third sub-pixel PX3 of the pixel.
  • the first color generating unit 43 generates first color light based on the light provided from the light emitting unit 41
  • the second color generating unit 44 generates second color light based on the light provided from the light emitting unit 41.
  • Color light is generated
  • the third color generator 45 may generate third color light based on light provided from the light emitting unit 41 .
  • the first color generating unit 43 outputs blue light from the light emitting unit 41 as red light
  • the second color generating unit 44 outputs blue light from the light emitting unit 41 as green light.
  • the third color generating unit 45 may output blue light from the light emitting unit 41 as it is.
  • the first color generator 43 includes a first color filter
  • the second color generator 44 includes a second color filter
  • the third color generator 45 includes a third color filter.
  • the first color filter, the second color filter, and the third color filter may be formed of a transparent material through which light can pass.
  • At least one of the first color filter, the second color filter, and the third color filter may include a quantum dot.
  • the quantum dot of the embodiment may be selected from a group II-IV compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and a combination thereof.
  • the II-VI compound is a binary element compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof;
  • Group III-V compound is a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof;
  • it may be selected from the group consisting of quaternary compounds selected from the group consisting of AlGaInP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb
  • Group IV-VI compounds are SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a binary element compound selected from the group consisting of mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; And it may be selected from the group consisting of quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof.
  • Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof.
  • the group IV compound may be a binary element compound selected from the group consisting of SiC, SiGe, and mixtures thereof.
  • quantum dots may have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, and light emitted through the quantum dots may be emitted in all directions. Accordingly, the viewing angle of the light emitting display device may be improved.
  • FWHM full width of half maximum
  • quantum dots may have a shape such as spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplatelet particles, etc., but are not limited thereto. does not
  • the first color filter may include red quantum dots
  • the second color filter may include green quantum dots.
  • the third color filter may not include quantum dots, but is not limited thereto.
  • blue light from the light emitting device 150 is absorbed by the first color filter, and the absorbed blue light is wavelength-shifted by red quantum dots to output red light.
  • blue light from the light emitting device 150 is absorbed by the second color filter, and the wavelength of the absorbed blue light is shifted by green quantum dots to output green light.
  • blue light from a foot and an element may be absorbed by the third color filter, and the absorbed blue light may be emitted as it is.
  • the light emitting device 150 when the light emitting device 150 emits white light, not only the first color filter and the second color filter, but also the third color filter may include quantum dots. That is, the wavelength of white light of the light emitting device 150 may be shifted to blue light by the quantum dots included in the third color filter.
  • At least one of the first color filter, the second color filter, and the third color filter may include a phosphor.
  • some of the first color filters, the second color filters, and the third color filters may include quantum dots, and others may include phosphors.
  • each of the first color filter and the second color filter may include a phosphor and a quantum dot.
  • at least one of the first color filter, the second color filter, and the third color filter may include scattering particles. Since the blue light incident on each of the first color filter, the second color filter, and the third color filter is scattered by the scattering particles and the color of the scattered blue light is shifted by the corresponding quantum dots, light output efficiency may be improved.
  • the first color generator 43 may include a first color conversion layer and a first color filter.
  • the second color generator 44 may include a second color converter and a second color filter.
  • the third color generator 45 may include a third color conversion layer and a third color filter.
  • Each of the first color conversion layer, the second color conversion layer, and the third color conversion layer may be disposed adjacent to the light emitting unit 41 .
  • the first color filter, the second color filter and the third color filter may be disposed adjacent to the second substrate 46 .
  • the first color filter may be disposed between the first color conversion layer and the second substrate 46 .
  • the second color filter may be disposed between the second color conversion layer and the second substrate 46 .
  • the third color filter may be disposed between the third color conversion layer and the second substrate 46 .
  • the first color filter may contact the upper surface of the first color conversion layer and have the same size as the first color conversion layer, but is not limited thereto.
  • the second color filter may contact the upper surface of the second color conversion layer and have the same size as the second color conversion layer, but is not limited thereto.
  • the third color filter may contact the upper surface of the third color conversion layer and have the same size as the third color conversion layer, but is not limited thereto.
  • the first color conversion layer may include red quantum dots
  • the second color conversion layer may include green quantum dots.
  • the third color conversion layer may not include quantum dots.
  • the first color filter includes a red-based material that selectively transmits the red light converted in the first color conversion layer
  • the second color filter includes green light that selectively transmits the green light converted in the second color conversion layer.
  • a blue-based material may be included
  • the third color filter may include a blue-based material that selectively transmits blue light transmitted as it is through the third color conversion layer.
  • the third color conversion layer as well as the first color conversion layer and the second color conversion layer may also include quantum dots. That is, the wavelength of white light of the light emitting device 150 may be shifted to blue light by the quantum dots included in the third color filter.
  • the second substrate 46 may be disposed on the color generator 42 to protect the color generator 42 .
  • the second substrate 46 may be formed of glass, but is not limited thereto.
  • the second substrate 46 may be called a cover window, cover glass, or the like.
  • the second substrate 46 may be formed of glass or a flexible material, but is not limited thereto.
  • the display device of the embodiment may include a stretchable display device.
  • a stretchable display device may be a display device capable of displaying an image even when bent or stretched.
  • a stretchable display device may have higher flexibility than a general display device. Accordingly, the user may bend or stretch the stretchable display device. That is, the shape of the stretchable display device can be freely changed according to the user's manipulation. For example, when a user grabs an end of the stretchable display device and pulls it, the stretchable display device may be stretched by the user's force. Alternatively, when a user places the stretchable display device on a wall that is not flat, the stretchable display device may be bent along the shape of the surface of the wall. Also, when the force applied by the user is removed, the stretchable display device may return to its original shape.
  • the display area DA including a plurality of pixels (PX1 to PX4 in FIG. 10 ) is a rigid region, and a non-display area between the pixels (PX1 to PX4 in FIG. 10 ) (NDA) may be a soft region.
  • the rigid region may be composed of a plurality of layers.
  • at least one transistor, a capacitor, and a plurality of semiconductor light emitting devices may be disposed on the rigid region.
  • a plurality of connection wires (307 and 308 of FIG. 10) electrically connecting pixels (PX1 to PX4 of FIG. 10) may be disposed on the soft area.
  • Each of the plurality of connection wires 307 and 308 may have a serpentine shape.
  • the meandering connection wires 307 and 308 may be changed into straight lines.
  • the stretchable display device according to the exemplary embodiment is contracted to its original state, the linear connection wires 307 and 308 may return to the meandering connection wires 307 and 308 again.
  • the stretchable display device of the exemplary embodiment may include at least one substrate having elasticity and excellent stretchability. At least one or more substrates serve as a support substrate while enabling stretching in a specific direction. Winding connection wires 307 and 308 may be disposed on the substrate. Accordingly, when the substrate is stretched, the meandering connection wires 307 and 308 may be changed to straight connection wires 307 and 308 .
  • the number of layers in the soft area should be minimized and no rigid material or layer should be formed.
  • a plurality of semiconductor light emitting devices may be attached to a substrate using conductive balls and electrically connected to the substrate.
  • ACF anisotropic conductive film
  • a semiconductor light emitting device may be attached to a substrate using a ball and electrically connected to the substrate.
  • ACP anisotropic conductive paste
  • a semiconductor light emitting device For example, after an anisotropic conductive paste (ACP) including conductive balls is applied over the entire area of a substrate and a semiconductor light emitting device is placed on the ACP, heat or pressure is applied to the ACP corresponding to the semiconductor light emitting device to generate the ACP.
  • a semiconductor light emitting device may be attached to a substrate using a conductive ball and electrically connected to the substrate.
  • the method of electrically connecting the semiconductor light emitting device to the substrate by means of the ACF or ACP disposed over the entire area of the substrate has the following problems.
  • the material cost of ACF or ACP is usually high.
  • the manufacturing cost is significantly increased, which runs counter to commercialization of the product.
  • ACP it can be applied on a substrate by an inkjet coating method.
  • the embodiment is such that the semiconductor light emitting device is provided with a conductive adhesive layer in advance, and after the conductive adhesive layer of the semiconductor light emitting device is positioned to correspond to each pixel of the substrate, the semiconductor light emitting device using a conductive ball of the conductive adhesive layer may be attached to the substrate and electrically connected to the substrate.
  • the conductive adhesive layer is disposed only in the rigid region and no conductive adhesive layer is disposed in the soft region in the stretchable display device according to the embodiment, stretchability is improved and manufacturing cost is reduced, thereby contributing to product commercialization.
  • a conductive adhesive layer having a uniform thickness is provided in advance in the semiconductor light emitting device, and the semiconductor light emitting device is formed by using the conductive adhesive layer having an optimal thickness that is uniform and easily electrically contactable. Since it is disposed in the pixels (PX1 to PX4 in FIG. 10), electrical contact failure of the conductive balls can be prevented.
  • the process of aligning the ACF or applying the ACP on the substrate is not required, so the process can be simplified.
  • a display device may mean a stretchable display device.
  • 10 is a plan view illustrating the display device according to the first embodiment.
  • 11 is a cross-sectional view of the display device according to the first embodiment.
  • the display device 300 includes a first substrate 301, a plurality of insulating layers 302, a plurality of driving units 303, and a plurality of semiconductor light emitting elements 150_R. , 150_G, 150_B), a plurality of connection wires 307 and 308, and a second substrate 309.
  • the display apparatus 300 according to the first embodiment may further add at least one or more components in addition to the above-described components.
  • the first substrate 301 is a substrate for supporting and protecting various components of the display device 300 .
  • the first substrate 301 is a flexible substrate and may be made of an insulating material that can be bent or stretched.
  • the first substrate 301 may be called an insulating member, an insulating layer, a support member, a support layer, or the like.
  • the first substrate 301 may be made of a flexible material.
  • the first substrate 301 may be made of silicone rubber such as polydimethylsiloxane (PDMS), polyurethane (PU), or elastomer such as PTFE (polytetrafluoroethylene). It is not limited to this.
  • the first substrate 301 is a flexible substrate, and may reversibly expand and contract.
  • the elastic modulus (elastic modulus) may be several MPa to several hundred MPa, and the elongation breakage may be 100% or more.
  • the elongation breakage rate means the elongation rate at the time when the object to be stretched is destroyed or cracked.
  • the first substrate 301 may have a display area DA including a plurality of pixels PX1 to PX4 and a non-display area NDA surrounding the display area DA. At least one semiconductor light emitting device 150_R, 150_G, and 150_B may be disposed in each of the pixels PX1 to PX4.
  • the display area DA is an area where an image is displayed in the display device 300, and includes a display element and various driving elements for driving the display element, for example, at least one scan transistor ST as shown in FIG. , a driving transistor DT, at least one capacitor Cst, and the like may be disposed.
  • the display area DA includes a plurality of pixels PX1 to PX4.
  • a plurality of pixels PX1 to PX4 are disposed in the display area DA, and each pixel PX1 to PX4 includes a plurality of display elements.
  • the display device may include, for example, semiconductor light emitting devices 150_R, 150_G, and 150_B.
  • Each of the semiconductor light emitting devices 150_R, 150_G, and 150_B may be electrically connected to various wires, for example, connection wires 307 and 308 .
  • each of the pixels PX1 to PX4 has scan lines S1 to Sn, data lines D1 to Dm, and high potential voltage as shown in FIG. 3 through connection wires 307 and 308. It may be electrically connected to a high potential voltage line for supplying VDD and a low potential voltage line for supplying a low potential voltage (VSS).
  • the non-display area NDA is an area adjacent to the display area DA. That is, the non-display area NDA may be an area excluding the plurality of pixels PX1 to PX4. For example, the non-display area NDA may be an area between the pixels PX1 to PX4. The non-display area NDA is an area adjacent to and surrounding the display area DA. The non-display area NDA is an area in which an image is not displayed, and wiring and circuitry may be formed therein. For example, a plurality of connection wires 307 and 308 disposed between the pixels PX1 to PX4 may be disposed in the non-display area NDA.
  • Reference numeral 307 may indicate a connection wire disposed along the x-direction
  • reference numeral 308 may represent a connection wire disposed along the y-direction.
  • a plurality of insulating layers 302 may be disposed on the first substrate 301 .
  • a plurality of insulating layers 302 may be disposed on each of the pixels PX1 to PX4 , for example. Accordingly, since the pixels PX1 to PX4 are defined to be spaced apart from each other, the plurality of insulating layers 302 may also be spaced apart from each other.
  • the driving unit 303 may be disposed on the plurality of insulating layers 302 .
  • the insulating layer 302 is made of one layer for convenience in the drawing, it may actually be made of a plurality of layers.
  • at least one scan transistor ST, a driving transistor DT, and at least one capacitor Cst capable of driving each of the pixels PX1 to PX4 may be disposed between a plurality of layers.
  • the driver 303 may include at least one scan transistor ST, a driving transistor DT, and at least one capacitor Cst.
  • a stretchable display may be realized.
  • another insulating layer may be disposed under the plurality of connection wires 307 and 308 in the same shape as the plurality of connection wires 307 and 308 or may be omitted.
  • Another insulating layer may extend from one of the plurality of layers constituting the insulating layer 302 and include the same insulating material, but is not limited thereto.
  • another insulating layer is one of a plurality of layers constituting the insulating layer 302.
  • An insulating layer (not shown) having the same shape as each of the plurality of connection wires 307 and 308 may be formed under the plurality of connection wires 307 and 308 by removing the insulating film.
  • the plurality of insulating layers 302 are rigid substrates, and are spaced apart from each other and independently disposed on the first substrate 301 .
  • the plurality of insulating layers 302 may be rigid compared to the first substrate 301 .
  • the first substrate 301 may have more excellent ductility than the plurality of insulating layers 302 .
  • the side surface of the insulating layer 302 has an inclined surface, so that the plurality of connection wires 708 and 709 pass from the first substrate 301 via the inclined surface of the insulating layer 302 without interruption to a part of the upper surface of the insulating layer 302. can be formed up to
  • the plurality of insulating layers 302 may be made of a plastic material having flexibility, for example, polyimide (PI), polyacrylate, polyacetate, or the like. may be
  • the first substrate 301 and the insulating layer 302 may be made of the same material, but are not limited thereto.
  • a modulus of the insulating layer 302 may be higher than that of the first substrate 301 .
  • the modulus may be an elastic modulus representing a ratio of deformation due to stress with respect to stress applied to the substrate.
  • the insulating layer 302 may be a plurality of rigid substrates having rigidity compared to that of the first substrate 301 .
  • First and second pad electrodes 305 and 306 may be disposed on the insulating layer 302 .
  • the first and second pad electrodes 305 and 306 are electrically connected to the semiconductor light emitting devices 150_R, 150_G, and 150_B, and supply power to the semiconductor light emitting devices 150_R, 150_G, and 150_B, thereby semiconductor light emitting devices 150_R. , 150_G and 150_B), color light may be emitted from each.
  • Each of the first and second pad electrodes 305 and 306 may be called first and second wire electrodes, first and second connection electrodes, first and second driving electrodes, and the like.
  • the first and second pad electrodes 305 and 306 may include at least one or more layers.
  • the first and second pad electrodes 305 and 306 may include an adhesive layer, a barrier layer, an electrode layer, a reflective layer, and the like.
  • the adhesive layer, the barrier layer, the electrode layer, and the reflective layer the reflective layer is positioned on the uppermost layer, so that light traveling downward from each of the semiconductor light emitting devices 150_R, 150_G, and 150_B is reflected forward to improve luminance.
  • the first and second pad electrodes 305 and 306 may be formed of the same material as the plurality of connection wires 307 and 308, but are not limited thereto.
  • the first and second pad electrodes 305 and 306 and the plurality of connection wires 307 and 308 may be made of a metal having excellent conductivity.
  • the first and second pad electrodes 305 and 306 and the plurality of connection wires 307 and 308 may be formed of a metal material such as copper (Cu), aluminum (Al), titanium (Ti), or molybdenum (Mo) or copper.
  • /Molybdenum-titanium (Cu/Moti), titanium/aluminum/titanium (Ti/Al/Ti), etc. may be included, but is not limited thereto.
  • the first and second pad electrodes 305 and 306 may be formed at the same time as the plurality of connection wires 307 and 308 using a photolithography process, but this is not limited thereto.
  • Each of the plurality of semiconductor light emitting devices 150_R, 150_G, and 150_B may be disposed on the first and second pad electrodes 305 and 306 .
  • the plurality of semiconductor light emitting devices 150_R, 150_G, and 150_B may include a group II-IV compound or a group III-V compound, but are not limited thereto.
  • the plurality of semiconductor light emitting devices 150_R, 150_G, and 150_B may be Micro-LEDs having a micro-size or Nano-LEDs having a nano-size, but are not limited thereto.
  • the red semiconductor light emitting device 150_R may have a cylindrical shape, a rectangular shape, an elliptical shape, or a plate shape, but is not limited thereto.
  • the plurality of semiconductor light emitting devices 150_R, 150_G, and 150_B may be disposed in each of the plurality of pixels PX1 to PX4.
  • the plurality of semiconductor light emitting devices may include the first semiconductor light emitting device 150_R, the second semiconductor light emitting device 150_G, and the third semiconductor light emitting device 150_B, but is not limited thereto.
  • the first semiconductor light emitting device includes a red semiconductor light emitting device 150_R
  • the second semiconductor light emitting device includes a green semiconductor light emitting device 150_G
  • the third semiconductor light emitting device includes a blue semiconductor light emitting device 150_B.
  • the red semiconductor light emitting device 150_R generates red light having a red main wavelength band
  • the green semiconductor light emitting device 150_G generates red light having a green main wavelength band
  • the blue semiconductor light emitting device 150_B generates red light having a green main wavelength band. Blue light having a blue dominant wavelength band may be generated.
  • Each of the semiconductor light emitting devices 150_R, 150_G, and 150_B may be electrically connected to the first and second pad electrodes 305 and 306 on the first and second pad electrodes 305 and 306 .
  • the semiconductor light emitting devices 150_R, 150_G, and 150_B are attached to the insulating layer 302 and the first and second pad electrodes 305 and 306 by the conductive adhesive layer 154 of each of the semiconductor light emitting devices 150_R, 150_G, and 150_B. While being attached, it may be electrically connected to the first and second pad electrodes 305 and 306 .
  • each of the semiconductor light emitting devices 150_R, 150_G, and 150_B is positioned to face the first and second pad electrodes 305 and 306, heat or pressure is applied to melt the conductive adhesive layer 154.
  • Each of the semiconductor light emitting devices 150_R, 150_G, and 150_B may be electrically connected to the first and second pad electrodes 305 and 306 by the conductive ball 156 of the conductive adhesive layer 154.
  • the conductive ball 156 of the conductive adhesive layer 154 positioned between the semiconductor light emitting devices 150_R, 150_G, and 150_B and the first and second pad electrodes 305 and 306 is the semiconductor light emitting device 150_R, 150_G, and 150_B. It can be deformed from round to oval by pressing. When heat or pressure is released, the conductive adhesive layer 154 is hardened and the conductive ball 156 deformed into an elliptical shape can be maintained.
  • the conductive adhesive layer 154 of the semiconductor light emitting devices 150_R, 150_G, and 150_B is provided in advance so that the conductive adhesive layer 154 of the semiconductor light emitting devices 150_R, 150_G, and 150_B is attached to the first substrate 301.
  • the semiconductor light emitting devices 150_R, 150_G, and 150_B are attached to the first substrate 301 using the conductive balls 156 of the conductive adhesive layer 154, and the first It may be electrically connected to the substrate 301 .
  • the conductive adhesive layer 154 is disposed only in the rigid region and no conductive adhesive layer 154 is disposed in the soft region, the elongation property is improved and the manufacturing cost is reduced to commercialize the product. can contribute
  • the semiconductor light emitting devices 150_R, 150_G, and 150_B are provided with a conductive adhesive layer 154 having a uniform thickness in advance, and thus have an optimal thickness that is uniform and allows easy electrical contact. Since the semiconductor light emitting elements 150_R, 150_G, and 150_B are disposed in each of the pixels PX1 to PX4 using the conductive adhesive layer 154 having a conductive adhesive layer 154, electrical contact failure of the conductive ball 156 can be prevented.
  • the process of aligning the ACF or applying the ACP on the first substrate 301 is not required, so the process can be simplified.
  • a second substrate 309 may be disposed to protect various components disposed on the first substrate 301 .
  • the second substrate 309 may be formed by coating a material constituting the second substrate 309 on the first substrate 301 and the insulating layer 302 and then curing the material.
  • the second substrate 309 may be disposed to be in contact with the first substrate 301, the insulating layer 302, the plurality of connection wires 307 and 308, and the plurality of semiconductor light emitting devices 150_R, 150_G, and 150_B.
  • the second substrate 309 is a flexible substrate and may be made of an insulating material that can be bent or stretched.
  • the second substrate 309 is a flexible substrate, and may reversibly expand and contract.
  • the elastic modulus (elastic modulus) may be several MPa to several hundred MPa, and the elongation breakage may be 100% or more.
  • the second substrate 309 may have a thickness smaller than that of the first substrate 301, but is not limited thereto.
  • the second substrate 309 may be made of the same material as the first substrate 301 .
  • the second substrate 309 may be formed of silicone rubber such as polydimethylsiloxane (PDMS), polyurethane (PU), or elastomer such as PTFE (polytetrafluoroethylene).
  • PDMS polydimethylsiloxane
  • PU polyurethane
  • elastomer such as PTFE (polytetrafluoroethylene).
  • PTFE polytetrafluoroethylene
  • a polarization layer may be disposed on the second substrate 309 .
  • the polarization layer may polarize light incident from the outside of the display device 300 to reduce reflection of external light.
  • an optical film other than the polarization layer may be disposed on the second substrate 309 .
  • semiconductor light emitting devices 150_R, 150_G, and 150_B of the embodiment will be described in detail.
  • 12 is a cross-sectional view of the semiconductor light emitting device according to the first embodiment.
  • 13 is a plan view illustrating a semiconductor light emitting device according to an embodiment.
  • the red semiconductor light emitting device 150_R shows the red semiconductor light emitting device 150_R, but the green semiconductor light emitting device 150_G and the blue semiconductor light emitting device 150_B also have the same structure and shape as the red semiconductor light emitting device 150_R, The structure and shape of the semiconductor light emitting devices 150_G and 150_B can be easily understood from the structure and shape of the red semiconductor light emitting device 150_R shown in FIGS. 12 and 13 .
  • a red semiconductor light emitting device 150_R of an embodiment may include a light emitting part 151, a first electrode 152, a second electrode 153, and a conductive adhesive layer 154.
  • the red semiconductor light emitting device 150_R of the embodiment may include at least one or more components in addition to the above-described components.
  • a first electrode 152 and a second electrode 153 may be included in the light emitting unit 151 . That is, the red semiconductor light emitting device 150_R of the embodiment may include the light emitting part 151 and the conductive adhesive layer 154 . In this case, the first electrode 152 and the second electrode 153 are included in the light emitting unit 151 and may contact the conductive adhesive layer 154 .
  • the light emitting part 151 may include a plurality of semiconductor layers.
  • Each of the plurality of semiconductor layers may include a group II-IV compound or a group III-V compound, but is not limited thereto.
  • the light emitting unit 151 may include a first conductivity-type semiconductor layer including at least one layer, an active layer including at least one layer, and a second conductivity-type semiconductor layer including at least one layer.
  • the first conductivity type semiconductor layer may include a first conductivity type dopant
  • the second conductivity type semiconductor layer may include a second conductivity type semiconductor layer.
  • the first conductivity type dopant may include an n-type dopant
  • the second conductivity type dopant may include a p-type dopant.
  • the active layer may be disposed on the first conductivity type semiconductor layer
  • the second conductivity type semiconductor layer may be disposed on the active layer.
  • the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer may be sequentially grown using deposition equipment such as MOCVD.
  • a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer may be sequentially grown on a wafer (1000 in FIG. 14) and separated into chip units using a mesa etching process.
  • a passivation layer made of an insulating material may be formed on the upper and side surfaces of the light emitting unit 151 to protect the light emitting unit 151, but is not limited thereto.
  • the first electrode 152 and the second electrode 153 may be disposed on one side of the light emitting unit 151 .
  • the first electrode 152 and the second electrode 153 may serve to supply electrical signals for driving the light emitting unit 151 .
  • the first electrode 152 and the second electrode 153 may be made of a metal having excellent electrical conductivity.
  • the red semiconductor light emitting device 150_R shows a flip chip type semiconductor light emitting device in which the first electrode 152 and the second electrode 153 are disposed on the same side surface, but a horizontal type semiconductor light emitting device or a vertical type semiconductor light emitting device.
  • a semiconductor light emitting device may be adopted as an embodiment.
  • the light emitting unit 151 includes a first area 151_1, a second area 151_2, and a third area 151_3 between the first area 151_1 and the second area 151_2.
  • the first electrode 152 is disposed on the first region 151_1 of the light emitting unit 151
  • the second electrode 153 is disposed on the second region 151_2 of the light emitting unit 151.
  • first electrode 152 and the second electrode 153 are shown as being disposed on the same side of the light emitting unit 151, but the first electrode 152 and the second electrode 153 ) are disposed on different layers.
  • the first electrode 152 may be disposed on the first conductivity type semiconductor layer
  • the second electrode 153 may be disposed on the second conductivity type semiconductor layer.
  • partial regions of each of the second conductivity type semiconductor layer and the active layer may be etched in the chip unit light emitting unit 151 to expose the surface of the first conductivity type semiconductor layer.
  • a first electrode 152 may be formed on the exposed surface of the first conductivity type semiconductor layer.
  • the first electrode 152 may be a cathode electrode
  • the second electrode 153 may be an anode electrode. Therefore, a negative (-) voltage is supplied to the first conductivity type semiconductor layer through the first electrode 152 and a positive (+) voltage is supplied to the second conductivity type semiconductor layer through the second electrode 153. , red light may be emitted from the active layer.
  • the first electrode 152 and the second electrode 153 may be spaced apart from each other. Since the first electrode 152 and the second electrode 153 are members to which voltages of different polarities are supplied, they should not come into contact with each other. The separation distance between the first electrode 152 and the second electrode 153 may be set in consideration of the size of the light emitting unit 151 or a minimum distance to prevent an electrical short.
  • the first electrode 152 and the second electrode 153 are the light emitting part 151 may be spaced apart from each other by the width of the third region 151_3 of .
  • the conductive adhesive layer 154 may be disposed on the first electrode 152 and the second electrode 153 .
  • the conductive adhesive layer 154 may be an electrical connection member.
  • the conductive adhesive layer 154 electrically connects the first electrode 152 and the second electrode 153 to the outside, for example, the first pad electrode (305 in FIG. 11) and the second pad electrode (306 in FIG. 11). can be connected
  • the conductive adhesive layer 154 may be an adhesive member.
  • the conductive adhesive layer 154 may adhere the light emitting part 151 to the insulating layer 302 to fix the light emitting part 151 to the insulating layer 302 .
  • the conductive adhesive layer 154 of the embodiment may include an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP).
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • the conductive adhesive layer 154 may include a base member 155 and a plurality of conductive balls 156 .
  • the base member 155 may include an adhesive resin.
  • the base member 155 may include a curable resin.
  • the base member 155 may include an insulating resin.
  • the base member 155 may include a durable resin.
  • the plurality of conductive balls 156 may be made of a material having excellent electrical conductivity, and since this is widely known, a detailed description thereof will be omitted.
  • the conductive balls of the conductive adhesive layer may be randomly dispersed in the base member.
  • the density of the conductive balls is different according to the area of the conductive balls or the base member.
  • the plurality of conductive balls 156 may be fixed at equal intervals (or equal distances) from each other on the base member 155 .
  • the distance d11 between the first conductive ball 156_1 and the second conductive ball 156_2 is the distance d12 between the first conductive ball 156_1 and the third conductive ball 156_3.
  • the conductive balls 156 disposed in the conductive adhesive layer 154 may be fixed at equal intervals from each other.
  • the conductive adhesive layer 154 is positioned on the first electrode 152 and the second electrode 153. Even after being applied by heat or pressure, the plurality of conductive balls 156 do not flow and do not come into contact with each other. Therefore, the first electrode 152 and the second pad electrode ( 306 ) or between the second electrode 153 of the light emitting unit 151 and the first pad electrode 305 , an electrical short can be prevented.
  • the conductive balls 156 are fixed to each other at equal intervals, the density of the conductive balls 156 is the same depending on the position, so that the amount of current supplied through the first electrode 152 and the second electrode 153 uniformly luminance. can be improved.
  • the distance d2 between the plurality of conductive balls 156 is smaller than the distance d1 between the first electrode 152 and the second electrode 153, so that the plurality of conductive balls 156 are spaced apart from each other. can be placed.
  • the conductive balls 156 positioned between the first electrode 152 and the second electrode 153, that is, on the third region 151_3 of the light emitting unit 151 do not come into contact with each other, so that the first electrode ( 152) and the second electrode 153 may be prevented from being electrically shorted.
  • the conductive adhesive layer 154 includes a first conductive adhesive layer 154_1 corresponding to the first region 151_1 of the light emitting unit 151 and a second conductive adhesive layer 154_2 corresponding to the second region 151_2 of the light emitting unit 151. ) and a third conductive adhesive layer 154_3 corresponding to the third region 151_3 of the light emitting unit 151 .
  • a plurality of conductive balls 156 may be positioned on the same horizontal line.
  • the conductive balls 156 of the first conductive adhesive layer 154_1 may be positioned on the same horizontal line as the conductive balls 156 of the second conductive adhesive layer 154_2.
  • the conductive balls 156 of the second conductive adhesive layer 154_2 may be positioned on the same horizontal line as the conductive balls 156 of the third conductive adhesive layer 154_3.
  • the conductive balls 156 of the first conductive adhesive layer 154_1 may be positioned on the same horizontal line as the conductive balls 156 of the third conductive adhesive layer 154_3.
  • the conductive adhesive layer 154 may surround each of the first electrode 152 and the second electrode 153 .
  • the first conductive adhesive layer 154_1 may surround the first electrode 152 .
  • the first conductive adhesive layer 154_1 may surround the side surface of the first electrode 152 .
  • the thickness of the first conductive adhesive layer 154_1 may be greater than that of the first electrode 152 .
  • the first conductive adhesive layer 154_1 may be disposed on the upper surface of the first electrode 152, and the conductive ball 156 of the first conductive adhesive layer 154_1 may be disposed on the first electrode 152.
  • the conductive balls 156 of the first conductive adhesive layer 154_1 may be disposed within the base member 155 of the first conductive adhesive layer 154_1 disposed on the first electrode 152 .
  • the conductive balls 156 of the first conductive adhesive layer 154_1 may be disposed in the base member 155 to contact the first electrode 152 .
  • the conductive balls 156 of the first conductive adhesive layer 154_1 disposed on the first electrode 152 may be located on the same horizontal line.
  • the first electrode 152 of the light emitting unit 151 may be electrically connected to the first pad electrode 305 by using the conductive ball 156 of the first conductive adhesive layer 154_1 .
  • the second conductive adhesive layer 154_2 may surround the second electrode 153 .
  • the second conductive adhesive layer 154_2 may surround the side surface of the second electrode 153 .
  • the thickness of the second conductive adhesive layer 154_2 may be greater than that of the second electrode 153 .
  • the second conductive adhesive layer 154_2 may be disposed on the upper surface of the second electrode 153, and the conductive balls 156 of the second conductive adhesive layer 154_2 may be disposed on the second electrode 153.
  • the conductive balls 156 of the second conductive adhesive layer 154_2 may be disposed within the base member 155 of the second conductive adhesive layer 154_2 disposed on the second electrode 153 .
  • the conductive balls 156 of the second conductive adhesive layer 154_2 may be disposed in the base member 155 to contact the second electrode 153.
  • the conductive balls 156 of the second conductive adhesive layer 154_2 disposed on the second electrode 153 may be located on the same horizontal line.
  • the second electrode 153 of the light emitting unit 151 may be electrically connected to the second pad electrode 306 by using the conductive ball 156 of the second conductive adhesive layer 154_2 .
  • the thickness of the conductive adhesive layer 154 may be thin.
  • a thickness T2 of the conductive adhesive layer 154 may be smaller than a thickness T1 of the light emitting portion 151 .
  • the conductive adhesive layer 154 may be formed on the light emitting unit 151 using ACF or ACP.
  • the thickness T2 of the conductive adhesive layer 154 may correspond to the thickness of ACF or ACP.
  • ACF or ACP are placed on these light emitting units 151, and then the ACF or ACP is selectively applied to the light emitting unit 151 ) can be formed on If the thickness of the ACF or ACP is large, it may be difficult to selectively form the ACF or ACP on the light emitting unit 151 . That is, when the thickness of the ACF or ACP is large, when the ACF or ACP positioned between the light emitting parts 151 is removed, the ACF or ACP on the light emitting part 151 may also be removed.
  • the conductive balls 156 fixed at equal intervals within the ACF or ACP are scattered by the flow, and the conductive adhesive layer 154 in which the conductive balls 156 are scattered An electrical short may occur between the first electrode 152 and the second electrode 153 of the light emitting unit 151 .
  • the thickness T2 of the conductive adhesive layer 154 is smaller than the thickness T1 of the light emitting portion 151 to prevent the conductive ball 156 from flowing in the conductive adhesive layer 154, so that the ACF or ACP emits light.
  • the thickness T2 of the conductive adhesive layer 154 is smaller than the thickness T1 of the light emitting portion 151 to prevent the conductive ball 156 from flowing in the conductive adhesive layer 154, thereby reducing the conductivity During the bonding process by the adhesive layer 154, an electrical short defect between the first and second electrodes 153 of the light emitting unit 151 and the first and second pad electrodes 305 and 306 may be prevented.
  • the drawing shows that the conductive balls 156 composed of a single layer are positioned on the same horizontal line, the conductive balls 156 composed of each layer on the same horizontal line different from each other may be positioned. That is, the multi-layer conductive adhesive layer 154 including the conductive balls 156 may be disposed on the base member 155.
  • the conductive adhesive layer 154 is formed only on the top surface of each of the plurality of light emitting units 151, and The plurality of red semiconductor light emitting elements 150_R, 150_G, and 150_B, on which the conductive adhesive layer 154 is formed on the light emitting part 151 in a later process, are not formed between the light emitting parts 151 of the light emitting part 151, so that the plurality of red semiconductor light emitting elements 150_R, 150_G, and 150_B can be easily formed without interfering with each other. can be separated
  • FIG. 14 to 16 show a method of manufacturing a semiconductor light emitting device according to an embodiment according to a first manufacturing process.
  • the ACF 154a may be attached to the base film ( 1020 in FIG. 15 ).
  • ACF may be attached on the base film 1020 and wound around a roller. While the base film 1020 is unrolled by the roller, the ACF 154a positioned under the base film 1020 may be positioned on the wafer 1000, but is not limited thereto.
  • the light emitting part 151 may be grown on the wafer 1000 through a deposition process. Thereafter, a mesa etching process is performed to separate the light emitting unit 151 into chip units, while removing some layers of the light emitting unit 151, for example, the second conductivity type semiconductor layer and the active layer, so that the surface of the first conductivity type semiconductor layer is formed. may be exposed. After that, the first electrode 152 and the second electrode 153 may be formed on the light emitting part 151 . Specifically, the first electrode 152 may be formed on the first conductivity type semiconductor layer, and the second electrode 153 may be formed on the second conductivity type semiconductor layer.
  • ultraviolet light may be irradiated.
  • ultraviolet light may be irradiated on the rear surface of the light emitting unit 151 .
  • the rear surface of the light emitting unit 151 may be the opposite surface of the front surface of the light emitting unit 151 on which the first electrode 152 and the second electrode 153 are disposed.
  • the light emitting unit 151 may serve as a mask when irradiating with ultraviolet light.
  • the ultraviolet light may be light having a wavelength that does not pass through the light emitting unit 151 .
  • the wavelength of the ultraviolet light may be set in consideration of the band gap of the compound semiconductor material constituting the light emitting unit 151 .
  • the ACF 154a may include an ultraviolet curing agent that reacts with ultraviolet light.
  • the ACF 154a positioned on the light emitting unit 151 may not be cured because the UV light is not irradiated.
  • the ACF 154a corresponding to the interval between the light emitting parts 151 may be cured by irradiating the ultraviolet light through the light emitting parts 151 . Accordingly, when UV light is irradiated, the ACF 154a on the light emitting part 151 may be selectively cured depending on whether the light emitting part 151 is positioned.
  • the ACF (154a) which is positioned on the light emitting part 151 as it is without being transferred and is positioned between the light emitting parts 151 and cured, is transferred to the roller 1011, thereby forming a conductive adhesive layer 154 including the ACF (154a). This may be disposed on each light emitting part 151 .
  • the ACF 154a on the light emitting portion 151 is selectively cured using each light emitting portion 151 on the wafer 1000 as a mask by irradiating ultraviolet rays to form a conductive adhesive layer composed of the ACF 154a only on the light emitting portion 151 154 is arranged so that the conductive adhesive layer 154 can be easily formed only on the light emitting part 151, which causes a manufacturing defect, that is, when the ACF 154a located between the light emitting parts 151 is removed, the light emitting part A defect in which the ACF 154a on the 151 is also removed can be prevented.
  • the thickness of the ACF 154a is placed on the light emitting part 151 as the conductive adhesive layer 154 as it is, and the thickness T2 of the conductive adhesive layer 154 is reduced.
  • the conductive balls 156 in the conductive adhesive layer 154 can be fixed at regular intervals by maintaining the same, and then the first and second light emitting units 151 are formed by conductive bonding of the red semiconductor light emitting device 150_R. It can be easily adhered to the pad electrodes 305 and 306.
  • ultraviolet light is blocked by the first and second electrodes 152 and 153 using the first and second electrodes 152 and 153 on the light emitting unit 151 as a mask, so that the first and second electrodes 152 and 153 are blocked.
  • ACF 154a or ACP corresponding to the second electrodes 152 and 153 is not cured, and ACF corresponding to the remaining area, that is, between the light emitting parts 151 or between the first electrode 152 and the second electrode 153 (154a) or ACP can be hardened.
  • the uncured ACF 154a corresponding to the first and second electrodes 152 and 153 I or ACP is not transferred to the roller 1011 and is located on the first and second electrodes 152 and 153 as it is, and the cured ACF 154a or ACP corresponding to the remaining area is transferred to the roller 1011, thereby , ACF 154a may be disposed on the first and second electrodes 152 and 153 of each light emitting unit 151 .
  • the conductive adhesive layer 154 is not formed on the light emitting portion 151 between the first electrode 152 and the second electrode 153 .
  • the conductive adhesive layer 154 disposed on the first electrode 152 is referred to as the first conductive adhesive layer 154_11
  • the conductive adhesive layer 154 disposed on the second electrode 153 is referred to as the second conductive adhesive layer 154_21.
  • the first conductive adhesive layer 154_11 and the second conductive adhesive layer 154_21 may be spaced apart from each other.
  • the distance between the first electrode 152 and the second electrode 153 (d1 in FIG. 12 ) may be the same as the distance between the first conductive adhesive layer 154_11 and the second conductive adhesive layer 154_21 .
  • the first conductive adhesive layer 154_11 may be spaced apart from the second conductive adhesive layer 154_21 by the distance between the first electrode 152 and the second electrode 153 (d1 in FIG. 12 ).
  • 17 and 18 show a method of manufacturing a semiconductor light emitting device according to an embodiment according to a second manufacturing process.
  • an anti-adhesion pattern 1030 may be formed between each light emitting unit 151 on the wafer 1000 .
  • the anti-adhesion pattern 1030 may include a photosensitive material.
  • the anti-adhesion pattern 1030 may have a surface of a fluorine group.
  • the anti-adhesion pattern 1030 may be formed using a photolithography process.
  • a photosensitive film may be formed by coating a photosensitive material on the plurality of light emitting units 151 separated in chip units.
  • the photosensitive film of the embodiment may include a polymer (F-polymer) including a fluorine component.
  • a photosensitive film may be formed on the plurality of light emitting units 151 and between the plurality of light emitting units 151 . Thereafter, ultraviolet light may be irradiated using a mask to selectively cure the photosensitive film.
  • the photosensitive film formed between the plurality of light emitting parts 151 may be cured by irradiation of ultraviolet light, and the photosensitive film formed on the plurality of light emitting parts 151 may not be cured.
  • a developing process may be performed to remove the photosensitive film formed on the plurality of light emitting parts 151 , and the photosensitive film formed between the plurality of light emitting parts 151 may remain as it is and become the anti-adhesion pattern 1030 .
  • the anti-adhesion pattern 1030 may have a surface of a fluorine group.
  • the surface of the fluorine group may have hydrophobic properties.
  • the ACF 154a is formed on the light emitting part 151, but the ACF 154a is not formed between the light emitting parts 151 due to the hydrophobic surface of the anti-adhesive pattern 1030. Accordingly, the ACF 154a may be selectively formed only on the light emitting part 151 . Thereafter, the anti-adhesion pattern 1030 may be removed by performing a cleaning process or an etching process, but is not limited thereto.
  • an anti-adhesion pattern 1030 having a hydrophobic property is formed between the plurality of light emitting portions 151 on the wafer 1000 so that the conductive adhesive layer 154 composed of the ACF 154a is formed on the wafer 1000. ) to be disposed only on the light emitting part 151 on the light emitting part 151, manufacturing defect, that is, when the ACF 154a located between the light emitting parts 151 is removed, the ACF 154a on the light emitting part 151 is also removed. It can be prevented.
  • the thickness of the ACF 154a is placed on the light emitting unit 151 as the conductive adhesive layer 154 as it is, so that the thickness T2 of the conductive adhesive layer 154 is constant.
  • the conductive balls 156 in the conductive adhesive layer 154 can be fixed at regular intervals, and then the light emitting part 151 is connected to the first and second pads by using the conductive adhesive bonding of the red semiconductor light emitting element 150_R. It can be easily adhered to the electrodes 305 and 306.
  • an absorption layer is formed between the plurality of light emitting units 151 on the wafer 1000, and laser is irradiated so that the absorption layer absorbs the laser, and the ACF 154a is pushed by the absorption layer that absorbs the laser.
  • the ACF 154a may be formed only on the light emitting part 151 without being formed on the absorption layer.
  • the absorption layer includes a photosensitive material, and an additive capable of absorbing laser may be added.
  • a conductive material such as ITO or an inorganic material such as amorphous Si may be used instead of the photosensitive material.
  • an ACF 154a may optionally be disposed on the wafer 1000 . That is, the ACF 154a may be formed on the plurality of light emitting units 151 on the wafer 1000 to become the conductive adhesive layer 154 . However, the ACF 154a may not be formed between the plurality of light emitting units 151 .
  • the size of the conductive adhesive layer 154 may be the same as that of the light emitting unit 151 . That is, since the conductive adhesive layer 154 composed of the ACF 154a is disposed only on the light emitting unit 151 by the manufacturing process shown in FIGS. 14 to 18, the size of the conductive adhesive layer 154 is reduced to size may be the same. As such, the size of the conductive adhesive layer 154 is the same as that of the light emitting portion 151, so that the light emitting portion 151 can be easily attached to the first and second pad electrodes 305 and 306 by the conductive adhesive layer 154. It can be attached precisely.
  • Each of the pixels PX1 to PX4 mounted on the substrate has the same thickness T2 of each of the conductive adhesive layers 154 disposed on all light emitting units 151 on the wafer 1000 Since the red semiconductor light emitting devices 150_R of the are not distorted, there is no deviation between the luminance of the red light of each pixel PX1 to PX4, so that high quality image quality can be implemented.
  • 19 to 24 illustrate manufacturing processes of a display device according to an embodiment.
  • a plurality of red semiconductor light emitting devices 150_R may be provided on the wafer 1000 .
  • the plurality of red semiconductor light emitting devices 150_R provided on the wafer 1000 are manufactured by manufacturing according to the first manufacturing process shown in FIGS. 14 to 16 or by performing the second manufacturing process shown in FIGS. 17 and 18 . It can be.
  • the red semiconductor light emitting device 150_R may include a light emitting unit 151 and a conductive adhesive layer 154 disposed on the light emitting unit 151 .
  • the first electrode 152 and the second electrode 153 may be disposed between the light emitting part 151 and the conductive adhesive layer 154 to contact the conductive adhesive layer 154 .
  • the first electrode 152 and the second electrode 153 may be surrounded by the conductive adhesive layer 154 .
  • the first electrode 152 and the second electrode 153 may be included in the light emitting unit 151 .
  • the conductive adhesive layer 154 is formed only on the light emitting part 151 according to the first and second manufacturing processes, and on the wafer 1000 between the light emitting parts 151, the conductive adhesive layer ( 154) is not formed. Accordingly, when the plurality of red semiconductor light emitting devices 150_R on the wafer 1000 are transferred to another member by a subsequent process, the corresponding red semiconductor light emitting devices 150_R can be easily separated from the wafer 1000 .
  • the first interposer 1040 is pressed and a laser may be selectively irradiated from the rear surface of the wafer 1000.
  • the laser is focused on the boundary between the wafer 1000 and the red semiconductor light emitting device 150_R, so that the red semiconductor light emitting device 150_R can be easily separated from the wafer 1000 .
  • the wafer 1000 may be pressed, or the first interposer 1040 and the wafer 1000 may be simultaneously pressed toward each other. As shown in FIG.
  • the red semiconductor light emitting device 150_R irradiated with the laser is separated from the wafer 1000 and removed. 1 may be transferred to the interposer 1040.
  • the red semiconductor light emitting device 150_R on the wafer 1000 is easily transferred to the first interposer 1040 by the first adhesive member 1041 provided in the first interposer 1040, and the first interposer 1040 ) can be attached to
  • the conductive adhesive layer 154 of the red semiconductor light emitting device 150_R is in contact with the first adhesive member 1041 and is not exposed to the outside, so that it can be attached to the first and second pad electrodes (305 and 306 in FIG. 11) in this state. does not exist.
  • the red semiconductor light emitting device 150_R on the first interposer 1040 is transferred onto the second interposer 1050, and the conductive adhesive layer 154 of the red semiconductor light emitting device 150_R ) can be exposed to the outside.
  • the red semiconductor light emitting device 150_R on the wafer 1000 is easily transferred to the second interposer 1050 by the second adhesive member 1051 provided in the second interposer 1050, and the second interposer 1050 ) can be attached to
  • first interposer 1040 and the second interposer 1050 may be formed of the same material, but are not limited thereto.
  • first adhesive member 1041 and the second adhesive member 1051 may be formed of the same material, but are not limited thereto.
  • the distance between the arrangement of the red semiconductor light emitting elements 150_R in the first interposer 1040 and the second interposer 1050 is a specific mounting area of each pixel PX1 to PX4 on the first substrate (301 in FIG. 11 ). It may be the same as the interval between them.
  • the specific region may be a region where the red semiconductor light emitting device 150_R is mounted.
  • each of the pixels PX1 to PX4 may include a first mounting area, a second mounting area adjacent to the first mounting area, and a third mounting area adjacent to the second mounting area.
  • the first mounting area is an area where the red semiconductor light emitting device 150_R is mounted
  • the second mounting area is an area where the green semiconductor light emitting device 150_G is mounted
  • the third mounting area is the area where the blue semiconductor light emitting device 150_B is mounted. area may be.
  • the arrangement order of the red semiconductor light emitting device 150_R, the green semiconductor light emitting device 150_G, and the blue semiconductor light emitting device 150_B may be changed.
  • the distance between the arrangement of the red semiconductor light emitting elements 150_R in the first interposer 1040 and the second interposer 1050 is a specific mounting area of each pixel PX1 to PX4 on the first substrate (301 in FIG. 11 ). Since the distance between them is the same, the plurality of red semiconductor light emitting elements 150_R on the second interposer 1050 are moved to a specific mounting area of each pixel PX1 to PX4 on the first substrate (301 in FIG. 11) as it is. By transferring, the process time can be drastically reduced.
  • the second interposer 1050 is positioned on the display substrate 1060, aligned, and heat or pressure is applied to the plurality of red semiconductors on the second interposer 1050.
  • Each of the light emitting elements 150_R may be fixed to a specific region on each of the pixels PX1 to PX4 of the display substrate 1060 .
  • the first and second electrodes 152 and 153 of the red semiconductor light emitting device 150_R are connected to the display substrate 1060 by using the conductive ball 156 of the conductive adhesive layer 154 of the red semiconductor light emitting device 150_R. ) may be electrically connected to the first and second pad electrodes 305 and 306 on each of the pixels PX1 to PX4.
  • the lower surface of the conductive adhesive layer 154 is the upper surface of the first pad electrode 305, the side surface of the first pad electrode 305, the bottom surface of the second pad electrode 306, and the second pad electrode 306. It may contact the side surface of the two-pad electrode 306 and the top surface of the insulating layer 302 .
  • a red semiconductor light emitting device 150_R may be disposed on a display substrate 1060 .
  • the green semiconductor light emitting device 150_G and the blue semiconductor light emitting device 150_B may also be disposed on the display substrate 1060 . Accordingly, red light R, green light G and An image may be displayed by the blue light (B).
  • the display substrate 1060 may be the first substrate 301 shown in FIG. 11 .
  • an insulating layer 302 in which a driver (303 in FIG. 11 ) is embedded may be formed on the display substrate 1060 .
  • the red semiconductor light emitting device 150_R, the green semiconductor light emitting device 150_G, and the blue semiconductor light emitting device 150_B are formed by the first electrode pad 305 and the second electrode pad 306 disposed on the insulating layer 302. It may be disposed on and electrically connected to the first electrode pad 305 and the second electrode pad 306 .
  • the first interposer 1040 or the second interposer 1050 may also be called a donor.
  • the red semiconductor light emitting device 150_R may be more firmly fixed to the first substrate ( 301 in FIG. 11 ) by enhancing adhesion performance.
  • FIG. 25 is a cross-sectional view of a semiconductor light emitting device according to a second embodiment.
  • FIG. 25 shows the red semiconductor light emitting device 150_R
  • the green semiconductor light emitting device 150_G or blue semiconductor light emitting device 150_B also has the same shape and/or structure as the red semiconductor light emitting device 150_R shown in FIG. 25 . can have
  • the semiconductor light emitting device 150_R may include a light emitting unit 151 , a conductive adhesive layer 154 and a non-conductive adhesive layer 160 .
  • the first and second electrodes 152 and 153 may be disposed on the light emitting part 151 to contact the conductive adhesive layer 154 .
  • the conductive adhesive layer 154 may be referred to as a first adhesive layer
  • the non-conductive adhesive layer 160 may be referred to as a second adhesive layer.
  • the non-conductive adhesive layer 160 may include an insulating resin and may not include the conductive balls 156 .
  • the non-conductive adhesive layer 160 is disposed on the conductive adhesive layer 154, the conductive ball 156 of the conductive adhesive layer 160 is used for electrical connection, and the resin of the conductive adhesive layer 154 and the non-conductive adhesive layer 160 of resins can be used for bonding.
  • a non-conductive adhesive layer 160 is further provided on the conductive adhesive layer 154 so that the red semiconductor light emitting device 150_R has stronger adhesive strength and the insulating layer (302 in FIG. 11) and the first and second light emitting devices 150_R It may be fixed to the two pad electrodes 305 and 306 .
  • another conductive adhesive layer may be disposed on the conductive adhesive layer 154 instead of the non-conductive adhesive layer 160 .
  • the conductive adhesive layer 154 is not disposed on the entire area of the first substrate 301 but is disposed locally on each pixel PX1 to PX4, thereby realizing a stretchable display. It can be easy. That is, when the conductive adhesive layer 154 is disposed on the entire area of the substrate 301, since the curing property of the conductive adhesive layer 154 deteriorates the elongation property, it is difficult to implement a stretchable display. However, as in the exemplary embodiment, the conductive adhesive layer 154 is locally disposed on a minimum area of the first substrate 301, for example, only on the pixels PX1 to PX4, so that the stretching characteristics are not affected, thereby facilitating a stretchable display. can be implemented
  • the embodiment provides a conductive adhesive layer 154 to the semiconductor light emitting device according to a series of manufacturing processes (FIGS. 14 to 18) to solve this problem, so that the semiconductor light emitting device equipped with the conductive adhesive layer 154 is
  • the conductive adhesive layer 154 may be locally disposed only on each pixel PX1 to PX4 of the first substrate 301 by transferring the conductive adhesive layer 154 to each pixel PX1 to PX4 of the first substrate 301 .
  • the plurality of conductive balls 156 of the conductive adhesive layer 154 can maintain equal intervals, the first electrode 152 of the semiconductor light emitting element between the first electrodes 152 of the semiconductor light emitting element by the conductive balls 156 ) and the second pad electrode 306 on the first substrate 301 or between the second electrode 153 of the semiconductor light emitting device and the first pad electrode 305 on the first substrate 301.
  • the semiconductor light emitting devices 150_R, 150_G, and 150_B may be more firmly fixed to the first substrate 301 by strengthening the adhesion of the semiconductor light emitting devices 150_R, 150_G, and 150_B.
  • 26 is a cross-sectional view of a display device according to a second embodiment.
  • the second embodiment is the same as the first embodiment (FIG. 11) except for the insulating layer 310.
  • the same reference numerals are assigned to components having the same shape, structure, and function as those in the first embodiment, and detailed descriptions thereof are omitted. Elements omitted from the following description can be easily understood from the above description of the first embodiment.
  • the display device 300A according to the second embodiment includes a first substrate 301, a plurality of insulating layers 302, a plurality of driving units 303, and a plurality of semiconductor light emitting elements 150_R. , 150_G, 150_B), an insulating layer 310, a plurality of connection wires 307 and 308, and a second substrate 309.
  • the display apparatus 300A according to the second exemplary embodiment may include at least one or more additional components in addition to the above-described components.
  • the insulating layer 302 is referred to as a first insulating layer
  • the insulating layer 310 is referred to as a second insulating layer.
  • the second insulating layer 310 may be an adhesive layer.
  • the second insulating layer 310 may be formed of the same material as that of the conductive adhesive layer 154 of the semiconductor light emitting device.
  • the second insulating layer 310 may include an adhesive material having excellent adhesion.
  • the second insulating layer 310 may be disposed between the semiconductor light emitting devices.
  • the second insulating layer 310 may surround the semiconductor light emitting device.
  • the second insulating layer 310 may surround the first and second pad electrodes 305 and 306 .
  • the second insulating layer 310 may surround the conductive adhesive layer 154 .
  • the lower surface of the second insulating layer 310 may contact the upper surface of the first insulating layer 302 .
  • the lower surface of the second insulating layer 310 may come into contact with partial regions of the plurality of connection wires 307 and 308 disposed on the upper surface of the first insulating layer 302 .
  • the semiconductor light emitting elements can be more firmly attached to the first insulating layer 302 .
  • the upper surface of the second insulating layer 310 and the upper surface of the semiconductor light emitting device are shown as being positioned on the same horizontal line, but are not limited thereto.
  • the upper surface of the second insulating layer 310 may be positioned lower than the upper surface of the semiconductor light emitting device.
  • an upper side of the second insulating layer 310 may be positioned higher than the first and second electrodes 152 and 153 of the semiconductor light emitting device.
  • an upper side of the second insulating layer 310 may contact a lower portion of the light emitting unit 151 of the semiconductor light emitting device.
  • the second insulating layer 310 may be a planarization layer.
  • the planarization layer may include an organic material, but is not limited thereto.
  • the upper surface of the second insulating layer 310 may be positioned higher than the upper surface of the semiconductor light emitting device.
  • the second insulating layer 310 surrounds the semiconductor light emitting device and may also be disposed on the semiconductor light emitting device.
  • the top surface of the second insulating layer 310 surrounds the semiconductor light emitting device, it may be positioned higher than the top surface of the semiconductor light emitting device.
  • the upper surface of the second insulating layer 310 may have a flat, straight surface.
  • the upper surface of the second insulating layer 310 has a flat, straight surface, it may be easy to form a newly added layer on the second insulating layer 310 .
  • the second insulating layer 310 may be a reflective layer.
  • the reflective layer may include a reflective material.
  • particles having reflective properties such as TiO2 may be dispersed in a resin.
  • the second insulating layer 310 is a reflective layer, light emitted from each of the semiconductor light emitting devices is reflected forward by the reflective layer, thereby improving luminance.
  • the second insulating layer 310 may be a color mixing prevention layer.
  • the color mixing prevention layer may include a material that blocks light.
  • the second insulating layer 310 is a color mixing prevention layer, light emitted from each semiconductor light emitting device is blocked so that it does not propagate to adjacent semiconductor light emitting devices, and only light in a wavelength band set for each semiconductor light emitting device is emitted from the corresponding semiconductor light emitting device. Color gamut can be improved.
  • FIG. 27 is a cross-sectional view of a display device according to a third embodiment.
  • the third embodiment is similar to the first embodiment (FIG. 11) and the second embodiment (FIG. 26) except that a part of the second insulating layer 310 is disposed between the semiconductor light emitting device and the first insulating layer 302. similar to In the third embodiment, the same reference numerals are assigned to components having the same shape, structure, and function as those of the first and second embodiments, and detailed descriptions thereof are omitted. Elements omitted from the following description can be easily understood from the above description of the first and second embodiments.
  • a display device 300B includes a first substrate 301, a plurality of first insulating layers 302, a plurality of driving units 303, and a plurality of semiconductor light emitting devices. (150_R, 150_G, 150_B), a plurality of second insulating layers 310, a plurality of connection wires 307 and 308, and a second substrate 309.
  • the display device 300B according to the third exemplary embodiment may include at least one or more additional components in addition to the above-described components.
  • the semiconductor light emitting device may have a shape of the red semiconductor light emitting device 150_R shown in FIG. 16 .
  • the green semiconductor light emitting device 150_G and the blue semiconductor light emitting device 150_B may also have the same shape as the red semiconductor light emitting device 150_R shown in FIG. 16 .
  • the red semiconductor light emitting device 150_R, the green semiconductor light emitting device 150_G, and the blue semiconductor light emitting device 150_B shown in FIG. 16 may be attached to the first insulating layer 302 by applying heat or pressure. Accordingly, the first conductive adhesive layer 154_11 disposed on the first electrode 152 and the second conductive adhesive layer 154_21 disposed on the second electrode 153 may be spaced apart from each other in a horizontal direction. For example, the first conductive adhesive layer 154_11 may be spaced apart from the second conductive adhesive layer 154_21 by the distance between the first electrode 152 and the second electrode 153 (d1 in FIG. 12 ).
  • the second insulating layer 310 may surround the red semiconductor light emitting device 150_R, the green semiconductor device, and the blue semiconductor light emitting device 150_B.
  • the second insulating layer 310 may surround each of the first and second pad electrodes 305 and 306 .
  • the lower surface of the second insulating layer 310 may contact the upper surface of the first insulating layer 302 .
  • the lower surface of the second insulating layer 310 may come into contact with partial regions of the plurality of connection wires 307 and 308 disposed on the upper surface of the first insulating layer 302 .
  • the second insulating layer 310 may surround each of the first and second electrodes 152 and 153 of the red semiconductor light emitting device 150_R, the green semiconductor device, and the blue semiconductor light emitting device 150_B.
  • the second insulating layer 310 may be disposed between the first electrode 152 and the second electrode 153 of each of the red semiconductor light emitting device 150_R, the green semiconductor device, and the blue semiconductor light emitting device 150_B. .
  • the second insulating layer 310 may be disposed between the first conductive adhesive layer 154_11 and the second conductive adhesive layer 54_21.
  • the second insulating layer 310 may be disposed between the first pad electrode 305 and the second pad electrode 306 .
  • the second insulating layer 310 is between the first electrode 152 and the second electrode 153 of each of the red semiconductor light emitting device 150_R, the green semiconductor device, and the blue semiconductor light emitting device 150_B, and the first conductive adhesive layer 154_11 ) and the second conductive adhesive layer 54_21 and between the first pad electrode 305 and the second pad electrode 306, the second insulating layer 310 is disposed, so that any conductive adhesive layer 154 is not applied to the first electrode ( 152) and the second electrode 153 may not come into contact with the third region (151_3 in FIG. 12) of the light emitting unit 151.
  • the second insulating layer 310 is between the first electrode 152 and the second electrode 153 of each of the red semiconductor light emitting device 150_R, the green semiconductor device, and the blue semiconductor light emitting device 150_B, and the first conductive adhesive layer 154_11 ) and the second conductive adhesive layer 54_21 and between the first pad electrode 305 and the second pad electrode 306, the second insulating layer 310 is disposed, so that any conductive adhesive layer 154 may not be applied to the first pad electrode. It may not contact the top surface of the first insulating layer 302 positioned between the 305 and the second pad electrode 306 .
  • the second insulating layer 310 may be an adhesive layer, a planarization layer, a reflective layer, a color mixing prevention layer, or the like.
  • the embodiment may be adopted in the display field for displaying images or information.
  • the embodiment can be adopted in the display field for displaying images or information using a semiconductor light emitting device.
  • the embodiment can be adopted in the field of displays in which the size of a display can be enlarged or reduced by elongation characteristics.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention concerne un dispositif électroluminescent à semi-conducteur comprenant une unité électroluminescente, une première électrode, une seconde électrode et une couche adhésive conductrice. L'unité électroluminescente peut avoir une première région, une deuxième région et une troisième région entre la première région et la deuxième région. La première électrode peut être disposée sur la première région de l'unité électroluminescente, et la seconde électrode peut être disposée sur la deuxième région de l'unité électroluminescente. La couche adhésive conductrice peut être disposée sur la première électrode et la seconde électrode. La couche adhésive conductrice comprend un élément de base et une pluralité de billes conductrices fixées à l'élément de base à des intervalles égaux.
PCT/KR2021/007678 2021-06-18 2021-06-18 Appareil d'affichage WO2022265139A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2021/007678 WO2022265139A1 (fr) 2021-06-18 2021-06-18 Appareil d'affichage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2021/007678 WO2022265139A1 (fr) 2021-06-18 2021-06-18 Appareil d'affichage

Publications (1)

Publication Number Publication Date
WO2022265139A1 true WO2022265139A1 (fr) 2022-12-22

Family

ID=84526550

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2021/007678 WO2022265139A1 (fr) 2021-06-18 2021-06-18 Appareil d'affichage

Country Status (1)

Country Link
WO (1) WO2022265139A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170036942A (ko) * 2015-09-24 2017-04-04 엘지디스플레이 주식회사 연성 필름, 표시 패널 및 이를 포함하는 표시 장치
JP2017171868A (ja) * 2016-03-25 2017-09-28 デクセリアルズ株式会社 異方性導電接着剤及び発光装置
KR20200017336A (ko) * 2018-08-08 2020-02-18 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR20200071497A (ko) * 2018-12-11 2020-06-19 안성룡 마이크로led를 이용한 전자 장치 제조방법
KR20210053559A (ko) * 2019-11-04 2021-05-12 엘지디스플레이 주식회사 스트레쳐블 표시 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170036942A (ko) * 2015-09-24 2017-04-04 엘지디스플레이 주식회사 연성 필름, 표시 패널 및 이를 포함하는 표시 장치
JP2017171868A (ja) * 2016-03-25 2017-09-28 デクセリアルズ株式会社 異方性導電接着剤及び発光装置
KR20200017336A (ko) * 2018-08-08 2020-02-18 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR20200071497A (ko) * 2018-12-11 2020-06-19 안성룡 마이크로led를 이용한 전자 장치 제조방법
KR20210053559A (ko) * 2019-11-04 2021-05-12 엘지디스플레이 주식회사 스트레쳐블 표시 장치

Similar Documents

Publication Publication Date Title
WO2020230989A1 (fr) Dispositif d'affichage et son procédé de fabrication
WO2020050467A1 (fr) Dispositif électroluminescent et dispositif d'affichage le comprenant
WO2017034379A1 (fr) Tête de transfert et système de transfert pour dispositif électroluminescent à semi-conducteurs, et procédé de transfert de dispositif électroluminescent à semi-conducteurs
WO2020027401A1 (fr) Dispositif électroluminescent et dispositif d'affichage le comprenant
WO2022097785A1 (fr) Diode électroluminescente et dispositif d'affichage la comprenant
WO2020105809A1 (fr) Pixel, dispositif d'affichage le comprenant, et procédé de fabrication associé
WO2021025243A1 (fr) Appareil d'affichage utilisant un dispositif émetteur de lumière à semi-conducteurs
WO2023003049A1 (fr) Dispositif d'affichage
WO2022025365A1 (fr) Dispositif d'affichage
WO2022119018A1 (fr) Dispositif d'affichage
WO2022265139A1 (fr) Appareil d'affichage
WO2022004958A1 (fr) Dispositif d'affichage
WO2023277215A1 (fr) Dispositif d'affichage
WO2023008604A1 (fr) Dispositif d'affichage
WO2023013801A1 (fr) Dispositif d'affichage
WO2023282365A1 (fr) Élément électroluminescent à semi-conducteur et dispositif d'affichage
WO2022203099A1 (fr) Boîtier de dispositif électroluminescent et dispositif d'affichage
WO2022039300A1 (fr) Substrat de transfert utilisé dans la fabrication d'appareil d'affichage, appareil d'affichage et procédé de fabrication pour appareil d'affichage
WO2022107945A1 (fr) Dispositif d'auto-assemblage
WO2022149633A1 (fr) Dispositif et procédé d'auto-assemblage
WO2022114255A1 (fr) Élément électroluminescent et dispositif d'affichage le comprenant
WO2021025514A2 (fr) Module source de lumière, panneau d'affichage, motifs de panneau d'affichage, dispositif d'affichage et son procédé de fabrication
WO2022080514A1 (fr) Dispositif d'affichage
WO2022265138A1 (fr) Dispositif d'affichage
WO2022097787A1 (fr) Dispositif de tête à jet d'encre

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21946150

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE