WO2023013418A1 - Module de source de lumineuse à longueurs d'onde multiples - Google Patents

Module de source de lumineuse à longueurs d'onde multiples Download PDF

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Publication number
WO2023013418A1
WO2023013418A1 PCT/JP2022/028206 JP2022028206W WO2023013418A1 WO 2023013418 A1 WO2023013418 A1 WO 2023013418A1 JP 2022028206 W JP2022028206 W JP 2022028206W WO 2023013418 A1 WO2023013418 A1 WO 2023013418A1
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WIPO (PCT)
Prior art keywords
sets
light source
source module
lenses
semiconductor laser
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PCT/JP2022/028206
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English (en)
Japanese (ja)
Inventor
浩 浅香
茂生 林
克哉 左文字
雅幸 畑
Original Assignee
ヌヴォトンテクノロジージャパン株式会社
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Publication of WO2023013418A1 publication Critical patent/WO2023013418A1/fr

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • F21V13/04—Combinations of only two kinds of elements the elements being reflectors and refractors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present disclosure relates to a multi-wavelength light source module.
  • a multi-wavelength light source module having a plurality of semiconductor laser chips that emit lights of different colors is known (for example, Patent Document 1).
  • a multi-wavelength light source module described in Patent Document 1 includes a red semiconductor laser chip, a green semiconductor laser chip, and a blue semiconductor laser chip.
  • the polarization direction of the emitted light of a general red semiconductor laser chip and the fast axis direction (that is, the direction in which the light spreads at a large angle) are parallel, and the general green semiconductor laser chip and blue semiconductor laser chip emit light.
  • the polarization direction of incident light is perpendicular to the fast axis direction.
  • each semiconductor laser chip is arranged such that the optical axis direction of the red semiconductor laser chip is perpendicular to the optical axis directions of the green semiconductor laser chip and the blue semiconductor laser chip. are placed. Accordingly, in the multi-wavelength light source module described in Patent Document 1, the polarization direction of red light contained in the emitted light is aligned with the polarization directions of green light and blue light.
  • the light used in, for example, a time-resolved projector equipped with a single liquid crystal is required to have a uniform polarization direction and high power.
  • the present disclosure is intended to solve such problems, and aims to provide a multi-wavelength light source module that emits light with uniform polarization directions and high power.
  • one aspect of the multi-wavelength light source module includes a base having a main surface, and a plurality of first sets and a plurality of second sets arranged on the main surface.
  • each of the plurality of first sets includes a first semiconductor laser chip having a first optical axis parallel to the main surface and emitting a first light in a first wavelength band; and a first mirror that reflects in a direction normal to the plane, each of the plurality of second sets having a second optical axis parallel to the major plane and a second wavelength different from the first wavelength band.
  • a second semiconductor laser chip that emits a band of second light
  • a second mirror that reflects the second light in a direction perpendicular to the main surface, wherein the first optical axis is parallel to the main surface.
  • the second optical axis is parallel to a second direction parallel to the principal surface;
  • the second direction is a direction perpendicular to the first direction;
  • the polarization direction of the first light propagating from the first semiconductor laser chip to the first mirror and the polarization direction of the second light propagating from the second semiconductor laser chip to the second mirror are orthogonal.
  • FIG. 1 is a plan view of a multi-wavelength light source module according to Embodiment 1.
  • FIG. 2 is a cross-sectional view of the multi-wavelength light source module according to Embodiment 1.
  • FIG. FIG. 3 is a plan view of the multi-wavelength light source module according to Embodiment 1 with the lid removed.
  • FIG. 4 is a schematic diagram showing an outline of a far-field image of the first semiconductor laser chip according to Embodiment 1.
  • FIG. FIG. 5 is a diagram showing how the first light propagates from the first semiconductor laser chip according to the first embodiment.
  • FIG. 6 is a diagram showing how the second light propagates from the second semiconductor laser chip according to the first embodiment.
  • FIG. 7 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to Embodiment 1.
  • FIG. FIG. 8 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the second embodiment.
  • FIG. 9 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the third embodiment.
  • FIG. 10 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the fourth embodiment.
  • FIG. 11 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the fifth embodiment.
  • FIG. 12 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the sixth embodiment.
  • FIG. 13 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to Embodiment 7.
  • FIG. 14 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the eighth embodiment.
  • FIG. 15 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the ninth embodiment.
  • 16 is a plan view of the multi-wavelength light source module according to the modification of the first embodiment, with the cover removed.
  • FIG. 17 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the modification of the second embodiment.
  • FIG. 18 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the modification of Embodiment 7.
  • FIG. 14 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the eighth embodiment.
  • FIG. 15 is a plan view showing the layout of each module and wiring in
  • each figure is a schematic diagram and is not necessarily strictly illustrated. Therefore, the scales and the like are not always the same in each drawing.
  • symbol is attached
  • Embodiment 1 A multi-wavelength light source module according to Embodiment 1 will be described.
  • FIG. 1 and 2 are a plan view and a cross-sectional view, respectively, of a multi-wavelength light source module 10 according to this embodiment.
  • FIG. 2 shows a part of the cross section taken along line II-II of FIG.
  • FIG. 3 is a plan view showing the multi-wavelength light source module 10 according to the present embodiment with the cover 40 removed.
  • the outline of each lens of the lid 40 is indicated by a dashed line. 2 and 3, wiring for supplying electric power to each semiconductor laser chip included in the multi-wavelength light source module 10 is omitted.
  • the multi-wavelength light source module 10 is a device that emits light in multiple wavelength bands.
  • the multi-wavelength light source module 10 comprises a base 20, a plurality of first sets 11a-11j, and a plurality of second sets 12a-12d.
  • the multi-wavelength light source module 10 further comprises a plurality of third sets 13a-13d, a lid 40 and a frame member 30. As shown in FIG.
  • the base 20 shown in FIGS. 1-3 is a member on which the plurality of first sets 11a-11j and the plurality of second sets 12a-12d are arranged.
  • the base 20 has a planar main surface 21 .
  • the base 20 is a substrate having a substantially rectangular plate-like shape.
  • the base 20 is made of a material with high thermal conductivity, and also functions as a heat dissipation member that dissipates heat generated in the plurality of first sets 11a to 11j.
  • the material of the base 20 is, for example, a metal material, a ceramic material, or the like.
  • the base 20 is preferably made of a material with high thermal conductivity such as a metal material. Examples of metal materials that have high thermal conductivity and are practical for the base 20 include Cu and Al.
  • the base 20 is a Cu substrate made of Cu.
  • the frame member 30 shown in FIGS. 1-3 is an annular member surrounding the plurality of first sets 11a-11j and the plurality of second sets 12a-12d.
  • the frame member 30 is erected on the main surface 21 of the base 20 and functions as part of a container that houses the plurality of first sets 11a-11j and the plurality of second sets 12a-12d.
  • the frame member 30 also has a function of supporting the lid 40 .
  • the frame member 30 is sandwiched between the base 20 and the lid 40 .
  • a plurality of first sets 11a to 11j and a plurality of second sets 12a to 12d are arranged in a space surrounded by the base 20, the frame member 30, and the lid .
  • the space surrounded by the frame member 30, the base 20, and the lid 40 is hermetically sealed.
  • the frame member 30 has current terminals for supplying current to the plurality of first sets 11a-11j, the plurality of second sets 12a-12d, and the like. Specifically, as shown in FIG. 1, the frame member 30 includes two first positive current terminals 91p, two first negative current terminals 91n, and one second positive current terminal 92p. , a second negative current terminal 92n, a third positive current terminal 93p, and a third negative current terminal 93n. 2 and 3 for explaining the arrangement of each set, members for current supply such as current terminals are omitted in order to avoid complication of the drawing. Members for current supply such as current terminals will be described later.
  • the frame member 30 is made of, for example, a metal such as Fe, an alloy, or the like. When the frame member 30 has a current terminal, an insulating member is arranged around the current terminal.
  • Each of the plurality of first sets 11a-11j has a first semiconductor laser chip 51 and a first mirror 61. As shown in FIG. In this embodiment, each of the ten first sets 11a to 11j further has a first submount 71 arranged on the main surface 21 and on which the first semiconductor laser chip 51 is arranged.
  • the plurality of first sets 11a to 11j are arranged in the second direction out of the first and second directions parallel to the main surface 21 and perpendicular to each other. Specifically, the first sets 11a-11e and the first sets 11f-11j are arranged in the second direction, respectively. In other words, the first sets 11a-11j are arranged in a matrix of 2 rows and 5 columns.
  • the first semiconductor laser chip 51 is a laser chip that has a first optical axis parallel to the main surface 21 and emits a first light in a first wavelength band.
  • the first optical axis is parallel to the first direction parallel to principal surface 21 .
  • the first wavelength band includes at least part of the wavelength band (about 590 nm or more and 780 nm or less) including red light. That is, the first semiconductor laser chip 51 is a red semiconductor laser chip.
  • the oscillation wavelength of the first semiconductor laser chip 51 which is a red semiconductor laser chip, may be 590 nm or more and 650 nm or less.
  • the first semiconductor laser chip 51 has an emission surface from which the first light L11, which is laser light, is emitted.
  • the optical axis of the first light L11 (that is, the first optical axis) is parallel to the main surface 21 of the base 20 .
  • the first light L11 is indicated by a dashed arrow, and this dashed arrow indicates the optical axis of the first light L11, and the actual first light L11 is divergent light with a width.
  • the first semiconductor laser chip 51 directs the first light beam away from the regions where the second sets 12a to 12d and the third sets 13a to 13d are arranged. L11 is emitted.
  • the first semiconductor laser chip 51 is elongated with the first optical axis as its longitudinal direction.
  • the length of the first semiconductor laser chip 51 in the direction of the first optical axis is 1200 ⁇ m, but it is not limited to this.
  • the first semiconductor laser chip 51 is mounted on the upper surface of the first submount 71 (that is, the surface opposite to the main surface 21). Specifically, the first semiconductor laser chip 51 is mounted on a p-side connection electrode (not shown) on the first submount 71 . In this embodiment, the first semiconductor laser chip 51 is mounted on the first submount 71 by junction-down mounting. A p-side electrode of the first semiconductor laser chip 51 is connected to a p-side connection electrode on the first submount 71 .
  • the p-side connection electrode on the first submount 71 is an example of a p-side connection electrode for supplying current to the first semiconductor laser chip 51 .
  • the n-side connection electrode of the first semiconductor laser chip 51 is an example of an n-side connection electrode for supplying current to the first semiconductor laser chip 51 .
  • the mounting form of the first semiconductor laser chip 51 is not limited to this, and may be mounted on the first submount 71 by junction-up mounting. In this case, current is supplied to the first semiconductor laser chip 51 from the n-side connection electrode on the first submount 71 and the p-side electrode of the first semiconductor laser chip 51 .
  • the first semiconductor laser chip 51 and the first submount 71 constitute a first submodule, and each of the first submodules has a p-side connection for supplying power to the first semiconductor laser chip 51. It has an electrode and an n-side connection electrode.
  • the first semiconductor laser chip 51 is mounted so that the emission surface for emitting the first light L11 protrudes from the end surface of the first submount 71 on the light emission side. That is, the first semiconductor laser chip 51 protrudes from the end surface of the first submount 71 , and the emission surface of the first semiconductor laser chip 51 is positioned closer to the first semiconductor laser than the end surface of the first submount 71 on the light emission side. It is located on the light emitting side of the chip 51 .
  • the amount of protrusion of the first semiconductor laser chip 51 (that is, the distance from the end surface of the first submount 71 on the light emitting side to the emission surface of the first semiconductor laser chip 51) is, for example, 5 ⁇ m or more and 20 ⁇ m or less. is not limited to In this embodiment, the protrusion amount of the first semiconductor laser chip 51 is 10 ⁇ m.
  • the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 is the third direction perpendicular to the main surface 21 .
  • "parallel” is not limited to a completely parallel state, but also includes a substantially parallel state.
  • the state in which the first optical axis is parallel to the main surface 21 includes a state in which the inclination of the first optical axis with respect to the main surface 21 is 5° or less.
  • vertical is not limited to a completely vertical state, and includes a substantially vertical state.
  • the state in which the polarization direction of the first light L11 is perpendicular to the main surface 21 includes a state in which the inclination of the polarization direction of the first light L11 with respect to the normal to the main surface 21 is 5° or less.
  • the first semiconductor laser chip 51 is a semiconductor laser chip having an active layer made of a GaInP-based semiconductor.
  • the active layer of the first semiconductor laser chip 51 includes a tensile strained quantum well layer.
  • the first semiconductor laser chip 51 oscillates in TM mode.
  • the first semiconductor laser chip 51 is mounted such that the main surface of the active layer of the first semiconductor laser chip 51 is parallel to the main surface 21 .
  • the first mirror 61 is an optical element that reflects the first light L11 in a direction perpendicular to the main surface 21.
  • the first mirror 61 is an element having a first reflecting surface 61a that reflects the first light L11 from the first semiconductor laser chip 51, as shown in FIG.
  • the first mirror 61 is arranged at a position corresponding to the first lens 41 of the lid 40 .
  • the first reflecting surface 61 a is arranged to face the emission surface of the first semiconductor laser chip 51 .
  • the first mirror 61 is a plane mirror having a planar first reflecting surface 61a.
  • the first reflecting surface 61a is inclined at 45° with respect to the first optical axis direction.
  • the direction perpendicular to the first reflecting surface 61a is inclined at 45° with respect to the first optical axis direction.
  • the first light L11 is reflected by the first reflecting surface 61a and propagates from the first mirror 61 toward the lid 40 as the first reflected light L12.
  • the first reflected light L12 is indicated by a dashed arrow, but this dashed arrow indicates the optical axis of the first reflected light L12, and the actual first reflected light L12 has a width. Divergent light.
  • the first mirror 61 is mounted on the main surface 21 of the base 20 with a metallic bonding material.
  • the positional relationship between the first mirror 61 and the first semiconductor laser chip 51 is the same in all the first sets 11a to 11j.
  • the distances from the emission surface of the first semiconductor laser chip 51 to the first mirror 61 are all the same, and the optical axis of the first light L11 of the first semiconductor laser chip 51 (that is, the first optical axis)
  • the height from the surface 21 and the height from the main surface 21 of the first reflecting surface 61a are all the same.
  • the first submount 71 is a support member arranged on the main surface 21 and on which the first semiconductor laser chip 51 is arranged.
  • the first submount 71 is arranged between the main surface 21 and the first semiconductor laser chip 51, as shown in FIG.
  • the first submount 71 also functions as a heat sink for dissipating heat generated by the first semiconductor laser chip 51 . Therefore, the material of the first submount 71 may be either a conductive material or an insulating material, but preferably a material with high thermal conductivity. The thermal conductivity of the first submount 71 may be, for example, 150 W/(m ⁇ K) or more.
  • the first submount 71 is made of a ceramic such as aluminum nitride (AlN) or polycrystalline silicon carbide (SiC), a metal material such as Cu, or a single crystal diamond or polycrystalline diamond. . In this embodiment, the first submount 71 is made of AlN.
  • the shape of the first submount 71 is, for example, a rectangular parallelepiped, the shape is not limited to this.
  • a conductive material it is preferable to prevent electrical connection between the semiconductor laser chip and the conductive base by, for example, forming an insulating material on the mounting surface.
  • the first submount 71 is, for example, bonded to the main surface 21 of the base 20 using a metallic bonding material. That is, the first submount 71 is mounted without forming a fixing hole or the like in the base 20 . Therefore, the submount 50 can be mounted on the base 20 without degrading the heat dissipation characteristics of the base 20 .
  • Each of the plurality of second sets 12 a - 12 d has a second semiconductor laser chip 52 and a second mirror 62 .
  • each of the four second sets 12a-12d further has a second submount 72 arranged on the main surface 21 and on which the second semiconductor laser chip 52 is arranged.
  • a plurality of second sets 12a-12d are arranged in a line in a second direction.
  • the second semiconductor laser chip 52 is a laser chip that has a second optical axis parallel to the main surface 21 and emits second light in a second wavelength band different from the first wavelength band.
  • the second optical axis is parallel to the second direction.
  • the second wavelength band includes at least part of the wavelength band (about 490 nm or more and 580 nm or less) including green light. That is, the second semiconductor laser chip 52 is a green semiconductor laser chip.
  • the second wavelength band may be at least partially different from the first wavelength band. That is, the second wavelength band may include part of the first wavelength band.
  • the second semiconductor laser chip 52 has an emission surface through which the second light, which is laser light, is emitted.
  • the second light is divergent light with a width similar to that of the first light.
  • the second semiconductor laser chip 52 emits the second light from left to right in FIG.
  • the second semiconductor laser chip 52 is elongated with the second optical axis as its longitudinal direction.
  • the length of the second semiconductor laser chip 52 in the direction of the second optical axis is 1200 ⁇ m, but it is not limited to this.
  • the second semiconductor laser chip 52 is mounted on the top surface of the second submount 72 . Specifically, the second semiconductor laser chip 52 is mounted on a p-side connection electrode (not shown) on the second submount 72 . In this embodiment, the second semiconductor laser chip 52 is mounted on the second submount 72 by junction-down mounting. A p-side electrode of the second semiconductor laser chip 52 is connected to a p-side connection electrode on the second submount 72 .
  • the p-side connection electrode on the second submount 72 is an example of a p-side connection electrode for supplying current to the second semiconductor laser chip 52 .
  • the n-side connection electrode of the second semiconductor laser chip 52 is an example of an n-side connection electrode for supplying current to the second semiconductor laser chip 52 .
  • the mounting form of the second semiconductor laser chip 52 is not limited to this, and may be mounted on the second submount 72 by junction-up mounting.
  • the second semiconductor laser chip 52 and the second submount 72 constitute a second submodule, and each of the second submodules has a p-side connection for supplying power to the second semiconductor laser chip 52. It has an electrode and an n-side connection electrode.
  • the second semiconductor laser chip 52 is mounted so that the emission surface protrudes from the end face of the second submount 72 on the light emission side, similarly to the first semiconductor laser chip 51 .
  • the polarization direction of the second light propagating from the second semiconductor laser chip 52 to the second mirror 62 is the first direction parallel to the main surface 21 .
  • the second semiconductor laser chip 52 is a semiconductor laser chip having an active layer made of a GaInN-based semiconductor.
  • the second semiconductor laser chip 52 oscillates in TE mode.
  • the second semiconductor laser chip 52 is mounted such that the main surface of the active layer of the second semiconductor laser chip 52 is parallel to the main surface 21 .
  • the second mirror 62 is an optical element that reflects the second light in a direction perpendicular to the main surface 21 .
  • the second mirror 62 is an element having a second reflecting surface 62a that reflects the second light from the second semiconductor laser chip 52, as shown in FIG.
  • the second mirror 62 is arranged at a position corresponding to the second lens 42 of the lid 40 .
  • the second reflecting surface 62 a is arranged to face the emission surface of the second semiconductor laser chip 52 .
  • the second mirror 62 is a plane mirror having a planar second reflecting surface 62a.
  • the second reflecting surface 62a is inclined at 45° with respect to the second optical axis direction.
  • the direction perpendicular to the second reflecting surface 62a is inclined at 45° with respect to the second optical axis direction.
  • the second light is reflected by the second reflecting surface 62a and propagates from the second mirror 62 toward the lid 40 as second reflected light.
  • the second reflected light is divergent light.
  • the second mirror 62 is mounted on the main surface 21 of the base 20.
  • the positional relationship between the second mirror 62 and the second semiconductor laser chip 52 is the same in all of the second sets 12a-12d.
  • the distances from the emission surface of the second semiconductor laser chip 52 to the second mirror 62 are all the same, and the height of the optical axis of the second light of the second semiconductor laser chip 52 from the main surface 21 and the second reflection
  • the heights of the surfaces 62a from the main surface 21 are all the same.
  • the second submount 72 is a support member arranged on the main surface 21 and on which the second semiconductor laser chip 52 is arranged.
  • the second submount 72 is arranged between the main surface 21 and the second semiconductor laser chip 52 .
  • the second submount 72 like the first submount 71, also functions as a heat sink.
  • the material and shape of the second submount 72 and the mounting structure on the main surface 21 are the same as those of the first submount 71 .
  • Each of the plurality of third sets 13 a - 13 d has a third semiconductor laser chip 53 and a third mirror 63 .
  • each of the four third sets 13a-13d further has a third submount 73 arranged on the major surface 21 and on which the third semiconductor laser chip 53 is arranged.
  • the plurality of third sets 13a-13d are arranged in a row in the second direction.
  • the third semiconductor laser chip 53 is a laser chip that has a third optical axis parallel to the main surface 21 and emits third light in a third wavelength band different from the first and second wavelength bands.
  • the third optical axis is parallel to the second direction.
  • the third wavelength band includes at least part of the wavelength band (approximately 380 nm or more and 490 nm or less) including blue light. That is, the third semiconductor laser chip 53 is a blue semiconductor laser chip.
  • the third wavelength band may be at least partially different from the first and second wavelength bands. That is, the third wavelength band may include a portion of at least one of the first wavelength band and the second wavelength band.
  • the third semiconductor laser chip 53 has an emission surface for emitting third light, which is laser light.
  • the third light is divergent light having a width similar to the first light and the second light.
  • the third semiconductor laser chip 53 emits the third light from left to right in FIG.
  • the third semiconductor laser chip 53 has a long shape with the third optical axis as its longitudinal direction.
  • the length of the third semiconductor laser chip 53 in the direction of the third optical axis is 1200 ⁇ m, but it is not limited to this.
  • the third semiconductor laser chip 53 is mounted on the top surface of the third submount 73 . Specifically, the third semiconductor laser chip 53 is mounted on a p-side connection electrode (not shown) on the third submount 73 . In this embodiment, the third semiconductor laser chip 53 is mounted on the third submount 73 by junction-down mounting. A p-side electrode of the third semiconductor laser chip 53 is connected to a p-side connection electrode on the third submount 73 .
  • the p-side connection electrode on the third submount 73 is an example of a p-side connection electrode for supplying current to the third semiconductor laser chip 53 .
  • the n-side connection electrode of the third semiconductor laser chip 53 is an example of an n-side connection electrode for supplying current to the third semiconductor laser chip 53 .
  • the mounting form of the third semiconductor laser chip 53 is not limited to this, and may be mounted on the third submount 73 by junction-up mounting.
  • the third semiconductor laser chip 53 and the third submount 73 constitute a third submodule, and each of the third submodules has a p-side connection for supplying power to the third semiconductor laser chip 53. It has an electrode and an n-side connection electrode.
  • the third semiconductor laser chip 53 is mounted so that the emission surface protrudes from the end surface of the third submount 73 on the light emission side, similarly to the first semiconductor laser chip 51 and the second semiconductor laser chip 52 .
  • the polarization direction of the third light propagating from the third semiconductor laser chip 53 to the third mirror 63 is the first direction parallel to the main surface 21 .
  • the third semiconductor laser chip 53 is a semiconductor laser chip having an active layer made of a GaInN semiconductor.
  • the third semiconductor laser chip 53 oscillates in TE mode.
  • the third semiconductor laser chip 53 is mounted such that the main surface of the active layer of the third semiconductor laser chip 53 is parallel to the main surface 21 .
  • the third mirror 63 is an optical element that reflects the third light in a direction perpendicular to the main surface 21 .
  • the third mirror 63 is an element having a third reflecting surface 63a that reflects the third light from the third semiconductor laser chip 53, as shown in FIG.
  • the third mirror 63 is arranged at a position corresponding to the third lens 43 of the lid 40 .
  • the third reflecting surface 63 a is arranged to face the emission surface of the third semiconductor laser chip 53 .
  • the third mirror 63 is a plane mirror having a planar third reflecting surface 63a.
  • the third reflecting surface 63a is inclined at 45° with respect to the third optical axis direction.
  • the direction perpendicular to the third reflecting surface 63a is inclined at 45° with respect to the third optical axis direction.
  • the third light is reflected by the third reflecting surface 63a and propagates from the third mirror 63 toward the lid 40 as the third reflected light.
  • the third reflected light is divergent light.
  • the third mirror 63 is mounted on the main surface 21 of the base 20.
  • the positional relationship between the third mirror 63 and the third semiconductor laser chip 53 is the same in all the third sets 13a to 13d.
  • the distances from the emission surface of the third semiconductor laser chip 53 to the third mirror 63 are all the same, and the height of the optical axis of the third light of the third semiconductor laser chip 53 from the main surface 21 and the third reflection All the heights from the main surface 21 of the surface 63a are the same.
  • the third submount 73 is a support member arranged on the main surface 21 and on which the third semiconductor laser chip 53 is arranged.
  • the third submount 73 is arranged between the main surface 21 and the third semiconductor laser chip 53 .
  • the third submount 73 like the first submount 71, also functions as a heat sink.
  • the material and shape of the third submount 73 as well as the mounting structure on the main surface 21 are the same as those of the first submount 71 .
  • the lid 40 shown in FIGS. 1 and 2 is an optical member at least partially translucent.
  • the lid body 40 is supported by the frame member 30 and functions as a lid for the area surrounded by the frame member 30 .
  • the lid 40 is made of a translucent member such as glass.
  • the lid 40 has a plurality of first lenses 41 , a plurality of second lenses 42 and a plurality of third lenses 43 . Each lens may be integrally formed, or may be formed detachably from the lid 40 .
  • the space between the lid 40 and the frame member 30 is airtightly sealed. In this embodiment, the space between the lid 40 and the frame member 30 is airtightly sealed, but it is not necessarily airtightly sealed. Also, the lid 40 does not necessarily have to cover the entire opening of the frame member 30 .
  • the first light L11 reflected by the first mirror 61 is incident on each of the plurality of first lenses 41, as shown in FIG.
  • each of the multiple first lenses 41 receives the first reflected light L12 that is the first light L11 reflected by the first reflecting surface 61 a of the first mirror 61 .
  • each of the multiple first lenses 41 collimates the first reflected light L12 and outputs it as the first output light L13.
  • the multiple first lenses 41 are all spherical lenses having the same focal length.
  • the number of first lenses 41 is equal to the number of first sets 11a-11j. In this embodiment, the number of first lenses 41 is ten.
  • Each of the plurality of first lenses 41 is arranged at a position facing the first reflecting surface 61a. Therefore, the plurality of first lenses 41 are arranged in two rows in the second direction, similar to the plurality of first sets 11a to 11j.
  • the second light reflected by the second mirror 62 is incident on each of the plurality of second lenses 42 .
  • each of the plurality of second lenses 42 receives the second reflected light, which is the second light reflected by the second reflecting surface 62 a of the second mirror 62 .
  • each of the plurality of second lenses 42 collimates the second reflected light and outputs it as second output light.
  • the plurality of second lenses 42 are all spherical lenses having the same focal length.
  • the number of second lenses 42 is equal to the number of second sets 12a-12d. In this embodiment, the number of the plurality of second lenses 42 is four.
  • Each of the plurality of second lenses 42 is arranged at a position facing the second reflecting surface 62a. Accordingly, the plurality of second lenses 42 are arranged in a row in the second direction, similar to the plurality of second sets 12a-12d.
  • the third light reflected by the third mirror 63 is incident on each of the plurality of third lenses 43 .
  • each of the plurality of third lenses 43 receives the third reflected light, which is the third light reflected by the third reflecting surface 63 a of the third mirror 63 .
  • each of the plurality of third lenses 43 collimates the third reflected light and outputs it as third output light.
  • the multiple third lenses 43 are all spherical lenses having the same focal length.
  • the number of the plurality of third lenses 43 is equal to the number of the third sets 13a-13d. In this embodiment, the number of the plurality of third lenses 43 is four.
  • Each of the plurality of third lenses 43 is arranged at a position facing the third reflecting surface 63a. Therefore, the plurality of third lenses 43 are arranged in a row in the second direction, similar to the plurality of third sets 13a-13d.
  • the lid 40 has a lens area 44 in which a plurality of first lenses 41, a plurality of second lenses 42, and a plurality of third lenses 43 are arranged.
  • lens region 44 has a rectangular shape.
  • the lens area 44 may be defined as an arbitrary area in which the ratio of the area where each lens is arranged is 90% or more, for example.
  • the lens area 44 may be defined by an area surrounded by the envelopes of the plurality of first lenses 41 , the plurality of second lenses 42 , and the plurality of third lenses 43 .
  • FIG. 4 is a schematic diagram showing an outline of a far-field image (FFP) of the first semiconductor laser chip 51 according to this embodiment.
  • FIG. 5 is a diagram showing how the first light L11 propagates from the first semiconductor laser chip 51 according to this embodiment.
  • FIG. 5 shows a cross section passing through the first optical axis and perpendicular to the second direction. Also, in FIG. 5, the optical axes of the first light L11 and the first reflected light L12 are indicated by dashed arrows.
  • the first semiconductor laser chip 51 includes semiconductor laminates stacked in the third direction shown in FIG.
  • the first light L11 emitted from the emission surface of the first semiconductor laser chip 51 has a larger spread angle in the third direction parallel to the stacking direction than in the second direction perpendicular to the stacking direction.
  • the axis along the third direction in which the spread angle of the first light L11 is large is the fast axis Af
  • the axis parallel to the second direction perpendicular to the first optical axis and the fast axis Af of the first light L11 is the slow axis As. is.
  • the polarization direction is parallel to the fast axis Af.
  • the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 is parallel to the third direction.
  • the fast axis Af and the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 are perpendicular to the main surface 21 of the base 20 .
  • Such first light L11 is reflected by the first reflecting surface 61a of the first mirror 61 and propagates in the third direction perpendicular to the main surface 21 as the first reflected light L12.
  • the direction of the fast axis Af also changes.
  • the fast axis Af of the first reflected light L12 is parallel to the first direction as shown in FIG. Since the polarization direction of the first reflected light L12 is parallel to the fast axis Af, it is parallel to the first direction.
  • FIG. 6 is a diagram showing how the second light L21 propagates from the second semiconductor laser chip 52 according to this embodiment.
  • FIG. 6 shows a cross section passing through the second optical axis and perpendicular to the first direction. Also, in FIG. 6, the optical axes of the second light L21 and the second reflected light L22 are indicated by dashed arrows.
  • the second semiconductor laser chip 52 includes semiconductor laminates stacked in the third direction.
  • the second light L21 emitted from the emission surface of the second semiconductor laser chip 52 has a larger spread angle in the third direction parallel to the stacking direction than in the second direction perpendicular to the stacking direction.
  • the axis along the third direction in which the spread angle of the second light L21 is large is the fast axis Af, and the axis parallel to the first direction perpendicular to the second optical axis and the fast axis Af of the second light L21 is the slow axis As. is.
  • the second semiconductor laser chip 52 which is a green semiconductor laser chip, the polarization direction is parallel to the slow axis As.
  • the polarization direction of the second light L21 propagating from the second semiconductor laser chip 52 to the second mirror 62 is parallel to the first direction.
  • the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 and the polarization direction of the second light L21 propagating from the second semiconductor laser chip 52 to the second mirror 62 are , are orthogonal.
  • the slow axis As and the polarization direction of the second light L21 propagating from the second semiconductor laser chip 52 to the second mirror 62 are parallel to the main surface 21 of the base 20 .
  • Such second light L21 is reflected by the second reflecting surface 62a of the second mirror 62 and propagates in the third direction perpendicular to the main surface 21 as the second reflected light L22.
  • the direction of the fast axis Af changes, but the direction of the slow axis As does not change.
  • the slow axis As of the second reflected light L22 is parallel to the first direction as shown in FIG. Since the polarization direction of the second reflected light L22 is parallel to the slow axis As, it is parallel to the first direction.
  • the slow axis As and the polarization direction of the third light emitted from the third semiconductor laser chip 53 are parallel to the first direction, similarly to the second semiconductor laser chip 52.
  • the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 and the polarization direction of the third light propagating from the third semiconductor laser chip 53 to the third mirror 63 are Orthogonal.
  • the third light is reflected by the third reflecting surface 63a of the third mirror 63 and propagates in the third direction perpendicular to the main surface 21 as the third reflected light.
  • the direction of the fast axis Af changes, but the direction of the slow axis As does not change. is parallel to the first direction.
  • the polarization directions of the first reflected light, the second reflected light, and the third reflected light are all parallel to the first direction.
  • the polarization directions of the first output light, the second output light, and the third output light are all parallel to the first direction.
  • the plurality of first semiconductor laser chips 51, the plurality of second semiconductor laser chips 52, and the plurality of third semiconductor laser chips 53 emit light. Therefore, high-power light is emitted from the multi-wavelength light source module including only the single first semiconductor laser chip 51, the single second semiconductor laser chip 52, and the single third semiconductor laser chip 53. can.
  • the multi-wavelength light source module 10 can emit light with uniform polarization directions and high power.
  • a multi-wavelength light source module 10 is suitable, for example, as a light source for a time-resolved projector with a single liquid crystal.
  • the multi-wavelength light source module 10 it is possible to obtain light with the same polarization direction, so it is possible to reduce light loss that occurs when the light from the multi-wavelength light source module 10 is filtered by the polarizing filter.
  • high-power light can be obtained, so that a time-resolved projector capable of projecting a brighter image can be realized.
  • the first light L11 has a beam diameter larger in the direction of the fast axis Af than in the direction of the slow axis As.
  • the first reflected light L12 also has a larger beam diameter in the direction of the fast axis Af than in the direction of the slow axis As. Therefore, as shown in FIGS. 1 and 3, the dimension in the direction of the slow axis As (that is, the second direction) of the first lens 41 on which the first reflected light L12 is incident is the direction of the fast axis Af (that is, the first direction).
  • the width in the second direction of each of the plurality of first lenses 41 may be smaller than the width in the first direction.
  • the ratio of the dimension in the fast axis Af direction and the dimension in the slow axis As direction of the first reflected light L12 of the first lens 41 is, for example, about 2:1 to 6:1.
  • the dimension of the first lens 41 in the direction of the slow axis As can be reduced.
  • the second lens 42 and the third lens 43 may also have smaller dimensions in the direction of the slow axis As of the second reflected light and the third reflected light, respectively. That is, the width in the first direction of each of the plurality of second lenses 42 may be smaller than the width in the second direction. Also, the width in the first direction of each of the plurality of third lenses 43 may be smaller than the width in the second direction.
  • the dimensions in the second direction of the first lens 41, the second lens 42 and the third lens 43 are different.
  • the number of the first lenses 41 arranged in a row in the second direction is the number of the second lenses 42 arranged in a row in the second direction, and the number of the third lenses 42 arranged in a row in the second direction. It may differ from the number of lenses 43 .
  • FIG. 7 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 10 according to this embodiment.
  • FIG. 7 shows a plan view of the multi-wavelength light source module 10 with the cover 40 removed.
  • the frame member 30 includes two first positive current terminals 91p for supplying current to each set arranged inside the frame member 30 from the outside of the frame member 30, and two positive current terminals 91p. a first negative current terminal 91n, a second positive current terminal 92p, a second negative current terminal 92n, a third positive current terminal 93p, and a third negative current terminal 93n. Two first positive current terminals 91p, one second positive current terminal 92p, and one third positive current terminal 93p are connected to one end of the frame member 30 in the second direction (see FIG. 7). left end).
  • Each current terminal is a conductive member penetrating from the outside to the inside of the frame member 30 . If the frame member 30 is made of a conductive material, each current terminal and the frame member 30 are electrically insulated. A current is supplied to each semiconductor laser chip from the outside of the multi-wavelength light source module 10 using each of these current terminals.
  • the multi-wavelength light source module 10 includes four first set relay members 81, one second set relay member 82, and one third set relay member 83. further provide.
  • the first set relay member 81 is a member arranged at a position adjacent to the plurality of first sets 11a to 11j. In the present embodiment, the four first set relay members 81 are respectively arranged at positions adjacent to the first sets 11a, 11e, 11f, and 11j in the second direction.
  • the first set relay member 81 includes a conductive member 81e.
  • the configuration of the conductive member 81e is not particularly limited. For example, an Au film or the like can be used as the conductive member 81e.
  • the first set relay member 81 further includes an insulating member 81d.
  • the insulating member 81 d is a member containing an insulating material and arranged on the main surface 21 of the base 20 .
  • the insulating member 81d is not particularly limited as long as it can maintain electrical insulation between the base 20 and the conductive member 81e.
  • As the insulating member 81d for example, an insulating material such as AlN, SiC, SiN, or alumina can be used.
  • the conductive member 81e is arranged on the main surface 21 of the base 20 via the insulating member 81d. Thereby, electrical insulation between the conductive member 81e and the base 20 can be maintained.
  • the conductive member 81e is arranged on the upper surface of the insulating member 81d and joined to the base 20 with a metal-based joining material.
  • the second set relay member 82 is a member arranged at a position adjacent to the plurality of second sets 12a to 12d.
  • the second set relay member 82 is arranged adjacent to the plurality of second sets 12a to 12d in the first direction, and includes a plurality of conductive members 82e1 to 82e5.
  • the material of each of the conductive members 82e1 to 82e5 is the same as that of the conductive member 81e.
  • the second set relay member 82 further includes an insulating member 82d.
  • the insulating member 82 d is a member containing an insulating material and arranged on the main surface 21 of the base 20 .
  • the configuration of the insulating member 82d is similar to that of the insulating member 81d.
  • the insulating member 82d has an elongated shape extending in the second direction.
  • a plurality of conductive members 82e1 to 82e5 are arranged electrically insulated from each other on the upper surface of the insulating member 82d.
  • a plurality of conductive members 82e1 to 82e5 are arranged in the second direction.
  • the conductive member 82e1 is positioned adjacent to the second positive current terminal 92p and the second set 12a.
  • the conductive member 82e2 is arranged at a position adjacent to the second set 12a and the second set 12b.
  • the conductive member 82e3 is arranged at a position adjacent to the second set 12b and the second set 12c.
  • the conductive member 82e4 is arranged at a position adjacent to the second set 12c and the second set 12d.
  • the conductive member 82e5 is positioned adjacent to the second set 12d and the second negative current terminal 92n.
  • the second set relay member 82 may include a plurality of insulating members.
  • the second set relay member 82 may include a plurality of insulating members in which the plurality of conductive members 82e1 to 82e5 are respectively arranged.
  • the third set relay member 83 is a member arranged at a position adjacent to the plurality of third sets 13a to 13d.
  • the third set relay member 83 is arranged adjacent to the plurality of third sets 13a to 13d in the first direction, and includes a plurality of conductive members 83e1 to 83e5.
  • the material of each of the conductive members 83e1 to 83e5 is the same as that of the conductive member 81e.
  • the third set relay member 83 further includes an insulating member 83d.
  • the insulating member 83 d is a member containing an insulating material and arranged on the main surface 21 of the base 20 .
  • the configuration of the insulating member 83d is the same as the configuration of the insulating member 81d.
  • the insulating member 83d has an elongated shape extending in the second direction.
  • a plurality of conductive members 83e1 to 83e5 are arranged electrically insulated from each other on the upper surface of the insulating member 83d.
  • the plurality of conductive members 83e1 to 83e5 are arranged in the second direction.
  • the conductive member 83e1 is positioned adjacent to the third positive current terminal 93p and the third set 13a.
  • the conductive member 83e2 is arranged at a position adjacent to the third set 13a and the third set 13b.
  • the conductive member 83e3 is arranged at a position adjacent to the third set 13b and the third set 13c.
  • the conductive member 83e4 is arranged at a position adjacent to the third set 13c and the third set 13d.
  • the conductive member 83e5 is positioned adjacent to the third set 13d and the third negative current terminal 93n.
  • the third set relay member 83 may include a plurality of insulating members.
  • the third set relay member 83 may include a plurality of insulating members in which the plurality of conductive members 83e1 to 83e5 are respectively arranged.
  • a plurality of first sets 11a to 11j are electrically connected in series using a plurality of first wires W1.
  • the first wire W1 is a conductive wire.
  • the first wire W1 is not particularly limited as long as it is a conductive wire.
  • the first wire W1 is a wire containing Au.
  • the n-side connection electrode (not shown) of the first semiconductor laser chip 51 of the first set 11a and the p-side connection electrode 71e formed on the adjacent first submount 71 of the first set 11b are connected by one or more first wires W1.
  • the p-side connection electrode 71 e is electrically connected to a p-side electrode (not shown) of the first semiconductor laser chip 51 mounted on the first submount 71 .
  • the n-side connection electrodes of the first semiconductor laser chips 51 of the first set 11a and the p-side electrodes of the first semiconductor laser chips 51 of the first set 11b are electrically connected.
  • the electrodes 71e are electrically connected to each other.
  • the n-side connection electrodes of the first semiconductor laser chips 51 of the first sets 11f, 11g, 11h and 11i and the p-side connections of the first submounts 71 of the first sets 11g, 11h, 11i and 11j adjacent to each other The electrodes 71e are electrically connected to each other.
  • the first positive current terminal 91p which is one of the two first positive current terminals 91p, and the p-side connection electrode 71e of the first set 11a are connected by a first wire W1 and one relay member 81 for the first set. and are electrically connected.
  • the single first set relay member 81 is arranged at a position adjacent to the first positive current terminal 91p and the first set 11a. A portion of the first positive electrode current terminal 91p located within the region surrounded by the frame member 30 and the conductive member 81e of the first set relay member 81 are connected by using one or more first wires W1. electrically connected.
  • the conductive member 81e of the first set relay member 81 and the p-side connection electrode 71e of the first set 11a are electrically connected using one or more first wires W1.
  • the other first positive current terminal 91p of the two first positive current terminals 91p and the p-side connection electrode 71e of the first set 11f are connected to one first set relay member 81 and the first set 11f. It is electrically connected using a wire W1.
  • One first negative current terminal 91n of the two first negative current terminals 91n and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11e are combined into one first set relay member 81. and the first wire W1.
  • the single first set relay member 81 is arranged at a position adjacent to the first negative current terminal 91n and the first set 11e.
  • a portion of the first negative current terminal 91n located within the region surrounded by the frame member 30 and the conductive member 81e of the first set relay member 81 are connected by using one or more first wires W1. electrically connected.
  • the conductive member 81e of the relay member 81 for the first set and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11e are electrically connected using one or more first wires W1.
  • the other first negative current terminal 91n of the two first negative current terminals 91n and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11j are combined into one for the first set. They are electrically connected using the relay member 81 and the first wire W1.
  • current can be supplied from one first positive current terminal 91p and one first negative current terminal 91n to the five first sets 11a to 11e electrically connected in series.
  • current can be supplied from one first positive current terminal 91p and one first negative current terminal 91n to the five first sets 11f to 11j electrically connected in series.
  • the plurality of second sets 12a to 12d are electrically connected in series using the plurality of second wires W2 and the relay member 82 for the second set.
  • the second wire W2 has the same configuration as the first wire W1.
  • the n-side connection electrodes (not shown) of the second semiconductor laser chips 52 of the second set 12a and the p-side connection electrodes 72e formed on the second submount 72 of the second set 12b are electrically connected using one or more second wires W2 and the conductive member 82e2 of the relay member 82 for the second set.
  • the n-side connection electrodes (not shown) of the second semiconductor laser chips 52 of the second set 12a and the conductive member 82e2 are connected by one or more second wires W2.
  • the conductive member 82e2 and the p-side connection electrode 72e of the second set 12b are connected by one or more second wires W2.
  • the p-side connection electrode 72 e is electrically connected to the p-side electrode (not shown) of the second semiconductor laser chip 52 mounted on the second submount 72 .
  • the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12a and the p-side electrodes of the second semiconductor laser chips 52 of the second set 12b are electrically connected.
  • the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12b and the p-side electrodes of the second semiconductor laser chips 52 of the second set 12c are connected to the second wire W2 and the conductive member 82e3.
  • n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12c and the p-side electrodes of the second semiconductor laser chips 52 of the second set 12d are connected using a second wire W2 and a conductive member 82e4. electrically connected.
  • the second positive electrode current terminal 92p and the p-side connection electrode 72e of the second set 12a are electrically connected using the second wire W2 and the relay member 82 for the second set.
  • the portion of the second positive electrode current terminal 92p located within the region surrounded by the frame member 30 and the conductive member 82e1 of the second set relay member 82 are one or more second terminals. They are electrically connected using a wire W2.
  • the conductive member 82e1 and the p-side connection electrode 72e of the second set 12a are electrically connected using one or more second wires W2.
  • the second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12d are electrically connected using the second wire W2 and the relay member 82 for the second set. .
  • the portion of the second negative electrode current terminal 92n located within the region surrounded by the frame member 30 and the conductive member 82e5 of the second set relay member 82 are combined into one or more second terminals. They are electrically connected using a wire W2.
  • the conductive member 82e5 and the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12d are electrically connected using one or more second wires W2.
  • the plurality of third sets 13a to 13d are electrically connected in series using the plurality of third wires W3 and the relay member 83 for the third set.
  • the third wire W3 has the same configuration as the first wire W1.
  • the n-side connection electrode (not shown) of the third semiconductor laser chip 53 of the third set 13a and the p-side connection electrode 73e formed on the third submount 73 of the third set 13b are electrically connected using one or more third wires W3 and the conductive member 83e2 of the relay member 83 for the third set.
  • the n-side connection electrode (not shown) of the third semiconductor laser chip 53 of the third set 13a and the conductive member 83e2 are connected by one or more third wires W3.
  • the conductive member 83e2 and the p-side connection electrode 73e of the third set 13b are connected by one or more third wires W3.
  • the p-side connection electrode 73 e is electrically connected to a p-side electrode (not shown) of the third semiconductor laser chip 53 mounted on the third submount 73 .
  • the n-side connection electrodes of the third semiconductor laser chips 53 of the third set 13a and the p-side electrodes of the third semiconductor laser chips 53 of the third set 13b are electrically connected.
  • the n-side connection electrodes of the third semiconductor laser chips 53 of the third set 13b and the p-side electrodes of the third semiconductor laser chips 53 of the third set 13c are connected to the third wire W3 and the conductive member 83e3. are electrically connected using The n-side connection electrodes of the third semiconductor laser chips 53 of the third set 13c and the p-side electrodes of the third semiconductor laser chips 53 of the third set 13d are connected using the third wire W3 and the conductive member 83e4. electrically connected.
  • the third positive current terminal 93p and the p-side connection electrode 73e of the third set 13a are electrically connected using the third wire W3 and the relay member 83 for the third set.
  • the portion of the third positive electrode current terminal 93p located within the region surrounded by the frame member 30 and the conductive member 83e1 of the relay member 83 for the third set are connected to one or more third terminals. They are electrically connected using a wire W3.
  • the conductive member 83e1 and the p-side connection electrode 73e of the third set 13a are electrically connected using one or more third wires W3.
  • the third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using the third wire W3 and the relay member 83 for the third set. .
  • the portion of the third negative electrode current terminal 93n located within the region surrounded by the frame member 30 and the conductive member 83e5 of the relay member 83 for the third set are combined into one or more third terminals. They are electrically connected using a wire W3.
  • the conductive member 83e5 and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using one or more third wires W3.
  • the plurality of second sets 12a-12d are arranged in the second direction, and the second optical axis of each of the plurality of second sets 12a-12d is parallel to the second direction.
  • the second mirror 62 is arranged between two adjacent second semiconductor laser chips 52 . Therefore, the second wire W2 for electrically connecting two adjacent second semiconductor laser chips 52, the second mirror 62 and the second light may interfere with each other.
  • two second semiconductor lasers adjacent to the plurality of second sets 12a to 12d are provided via the second set relay member 82 arranged at a position adjacent to the plurality of second sets 12a to 12d in the first direction. Since the chip 52 is electrically connected, interference between the second wire W2, the second mirror 62, and the second light can be suppressed.
  • the second set relay member 82 it is possible to reduce the amount of the second wire W2 used.
  • the second wire W2 contains Au as in the present embodiment, the cost can be reduced by reducing the amount of the second wire W2 used.
  • the second set relay member 82 and the conductive members 82e2 to 82e5 are arranged at positions adjacent to the second mirror 62 in the first direction.
  • two adjacent second semiconductor laser chips 52 can be electrically connected bypassing the second mirror 62, so that the second wire W2 can be connected more reliably. , the interference with the second mirror 62 and the second light can be suppressed.
  • the third wire W3 and the third set relay member 83 similarly to the plurality of second sets 12a to 12d, by using the third wire W3 and the third set relay member 83, the third wire W3 and the third set Interference with the mirror 63 and the third light can be suppressed.
  • the third set relay member 83 and the conductive members 83e2 to 83e5 are arranged at positions adjacent to the third mirror 63 in the first direction. By using such conductive members 83e2 to 83e5, interference between the third wire W3, the third mirror 63, and the third light can be suppressed more reliably.
  • Embodiment 2 A multi-wavelength light source module according to Embodiment 2 will be described.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to the first embodiment mainly in the arrangement directions of the second set and the third set.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 8, focusing on differences from the multi-wavelength light source module 10 according to the first embodiment.
  • FIG. 8 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 110 according to this embodiment.
  • FIG. 8 shows a plan view of the multi-wavelength light source module 110 with the lid removed.
  • the multi-wavelength light source module 110 includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12d.
  • the multi-wavelength light source module 110 includes a plurality of third sets 13a-13d, a frame member 30, two first positive current terminals 91p, two first negative current terminals 91n, a second positive current terminal 92p, a second negative current terminal 92n, a third positive current terminal 93p, a third negative current terminal 93n, a first wire W1, a second wire W2, a third wire W3, It further includes four first set relay members 81, second set relay members 182a and 182b, and third set relay members 183a and 183b.
  • the multi-wavelength light source module 110 further includes lids having lenses arranged at positions corresponding to each set, as in the multi-wavelength light source module 10 according to the first embodiment. .
  • the plurality of first sets 11a to 11h according to the present embodiment are different in number from the first sets 11a to 11j according to the first embodiment, but have the same configuration except for the number.
  • the second optical axis of each of the plurality of second sets 12a-12d is parallel to the second direction, as in the first embodiment.
  • the plurality of second sets 12a-12d are arranged in a row in the first direction.
  • a plurality of second sets 12a-12d are electrically connected in series using a second wire W2.
  • a relay member or the like is not used between the two adjacent second semiconductor laser chips 52. They are electrically connected only by the second wire W2. As a result, the usage of the intermediate member and the second wire W2 can be reduced.
  • the second positive electrode current terminal 92p and the p-side connection electrode 72e of the second set 12d are electrically connected using the second wire W2 and the second set relay member 182b.
  • the second set relay member 182b is arranged at a position adjacent to the second set 12d in the second direction.
  • the second set relay member 182b includes a conductive member 182e2 and an insulating member 182d2.
  • the conductive member 182e2 is arranged on the upper surface of the insulating member 182d2.
  • a portion of the second positive electrode current terminal 92p located within the region surrounded by the frame member 30 and the conductive member 182e2 of the second set relay member 182b are connected using one or more second wires W2. electrically connected. Also, the conductive member 182e2 and the p-side connection electrode 72e of the second set 12d are electrically connected using one or more second wires W2.
  • the second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12a are electrically connected using the second wire W2 and the second set relay member 182a.
  • the second set relay member 182a is arranged at a position adjacent to the second set 12a in the first direction.
  • the second set relay member 182a includes a conductive member 182e1 and an insulating member 182d1.
  • the conductive member 182e1 is arranged on the upper surface of the insulating member 182d1.
  • a portion of the second negative current terminal 92n located within the region surrounded by the frame member 30 and the conductive member 182e1 of the second set relay member 182a are connected by using one or more second wires W2. electrically connected. Also, the conductive member 182e1 and the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12a are electrically connected using one or more second wires W2. In this way, by using the second set relay member 182a adjacent to the second set 12a in the first direction, the usage amount of the second wire W2 can be reduced.
  • the third optical axis of each of the plurality of third sets 13a-13d is parallel to the second direction, as in the first embodiment.
  • the plurality of third sets 13a-13d are arranged in a row in the first direction.
  • the plurality of third sets 13a-13d are electrically connected in series using a third wire W3.
  • a relay member or the like is not used between the two adjacent third semiconductor laser chips 53. They are electrically connected only by the third wire W3. As a result, the usage of the intermediate member and the third wire W3 can be reduced.
  • the third positive current terminal 93p and the p-side connection electrode 73e of the third set 13d are electrically connected using the third wire W3 and the third set relay member 183b.
  • the third set relay member 183b is arranged at a position adjacent to the third set 13d in the first direction.
  • the third set relay member 183b includes a conductive member 183e2 and an insulating member 183d2.
  • the conductive member 183e2 is arranged on the upper surface of the insulating member 183d2.
  • a portion of the third positive current terminal 93p located within the region surrounded by the frame member 30 and the conductive member 183e2 of the relay member 183b for the third set are connected using one or more third wires W3. electrically connected. Also, the conductive member 183e2 and the p-side connection electrode 73e of the third set 13d are electrically connected using one or more third wires W3. In this way, by using the third set relay member 183b adjacent to the third mirror 63 of the third set 13d in the first direction, the third wire W3, the third mirror 63 of the third set 13d and the third Interference with light can be suppressed. In addition, the usage of the third wire W3 can be reduced.
  • the third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a are electrically connected using the third wire W3 and the third set relay member 183a.
  • the third set relay member 183a is arranged at a position adjacent to the third set 13a in the first direction.
  • the third set relay member 183a includes a conductive member 183e1 and an insulating member 183d1.
  • the conductive member 183e1 is arranged on the upper surface of the insulating member 183d1.
  • a portion of the third negative current terminal 93n located within the region surrounded by the frame member 30 and the conductive member 183e1 of the third set relay member 183a are connected by using one or more third wires W3. electrically connected. Also, the conductive member 183e1 and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a are electrically connected using one or more third wires W3. In this way, by using the third set relay member 183a adjacent to the third mirror 63 of the third set 13a in the first direction, the third wire W3, the third mirror 63 of the third set 13a and the third Interference with light can be suppressed. In addition, the usage of the third wire W3 can be reduced.
  • the polarization directions are aligned and high-power light can be emitted. .
  • Embodiment 3 A multi-wavelength light source module according to Embodiment 3 will be described.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 110 according to the second embodiment mainly in the arrangement of the third set 13a-13d.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 9, focusing on differences from the multi-wavelength light source module 110 according to the second embodiment.
  • FIG. 9 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 210 according to this embodiment.
  • FIG. 9 shows a plan view of the multi-wavelength light source module 210 with the lid removed.
  • the multi-wavelength light source module 210 includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12d.
  • the multi-wavelength light source module 210 includes a plurality of third sets 13a-13d, a frame member 30, two first positive current terminals 91p, two first negative current terminals 91n, a second positive current terminal 92p, a second negative current terminal 92n, a third positive current terminal 93p, a third negative current terminal 93n, a first wire W1, a second wire W2, a third wire W3, It further includes four first set relay members 81, second set relay members 182a and 182b, and third set relay members 183c and 183d.
  • the multi-wavelength light source module 210 further includes lids having lenses arranged at positions corresponding to each set, as in the multi-wavelength light source module 10 according to the first embodiment. .
  • the third semiconductor laser chip 53 is closer to the end of the main surface 21 than the third mirror 63 in the direction of the third optical axis. placed in In other words, the third semiconductor laser chip 53 emits the third light from the outside to the inside of the area on the main surface 21 .
  • the third mirror 63 is not arranged between the third positive current terminal 93p and the third negative current terminal 93n arranged at the end of the main surface 21 and the third semiconductor laser chip 53 . Therefore, it is possible to suppress interference between the third wire W3 connecting each current terminal and the third semiconductor laser chip 53, the third mirror 63, and the third light.
  • the third positive current terminal 93p according to the present embodiment and the p-side connection electrode 73e of the third set 13d are electrically connected using the third wire W3 and the third set relay member 183d.
  • the third set relay member 183d is arranged at a position adjacent to the third set 13d in the second direction.
  • the third set relay member 183d includes a conductive member 183e4 and an insulating member 183d4.
  • the conductive member 183e4 is arranged on the upper surface of the insulating member 183d4.
  • a portion of the third positive electrode current terminal 93p located within the region surrounded by the frame member 30 and the conductive member 183e4 of the third set relay member 183d are connected by using one or more third wires W3. electrically connected. Also, the conductive member 183e4 and the p-side connection electrode 73e of the third set 13d are electrically connected using one or more third wires W3.
  • the third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a are electrically connected using the third wire W3 and the third set relay member 183c.
  • the third set relay member 183c is arranged at a position adjacent to the third set 13a in the first direction.
  • the third set relay member 183c includes a conductive member 183e3 and an insulating member 183d3.
  • the conductive member 183e3 is arranged on the upper surface of the insulating member 183d3.
  • a portion of the third negative current terminal 93n located within the region surrounded by the frame member 30 and the conductive member 183e3 of the third set relay member 183c are connected by using one or more third wires W3. electrically connected. Also, the conductive member 183e3 and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a are electrically connected using one or more third wires W3. In this way, by using the third set relay member 183c adjacent to the third set 13a in the first direction, the usage amount of the third wire W3 can be reduced.
  • the third semiconductor laser chip 53 is arranged closer to the end of the main surface 21 than the third mirror 63 in the direction of the third optical axis. Therefore, it is possible to suppress interference between the third wire W3 connecting each current terminal and the third semiconductor laser chip 53, the third mirror 63, and the third light. Also, the third set relay members 183c and 183d can be made smaller.
  • the second semiconductor laser chip 52 is located closer to the second mirror 62 than the second mirror 62 in the direction of the second optical axis. , are arranged near the edge of the main surface 21 . This can suppress interference between the second wire W2 connecting each current terminal and the second semiconductor laser chip 52, the second mirror 62, and the second light.
  • the polarization directions are aligned and high-power light can be emitted. .
  • Embodiment 4 A multi-wavelength light source module according to Embodiment 4 will be described.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to the first embodiment mainly in the arrangement of the second sets 12a-12d and the third sets 13a-13d.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 10, focusing on differences from the multi-wavelength light source module 10 according to the first embodiment.
  • FIG. 10 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 310 according to this embodiment.
  • FIG. 10 shows a plan view of the multi-wavelength light source module 310 with the lid removed.
  • a multi-wavelength light source module 310 includes a base 20, a plurality of first sets 11a-11j, and a plurality of second sets 12a-12d.
  • the multi-wavelength light source module 310 includes a plurality of third sets 13a-13d, a frame member 30, two first positive current terminals 91p, two first negative current terminals 91n, a second positive current terminal 92p, a second negative current terminal 92n, a third positive current terminal 93p, a third negative current terminal 93n, a first wire W1, a second wire W2, a third wire W3, It further includes four first set relay members 81, second set relay members 382a to 382c, and third set relay members 383a to 383c.
  • the multi-wavelength light source module 310 further includes lids having lenses arranged at positions corresponding to the respective sets, as in the multi-wavelength light source module 10 according to the first embodiment. .
  • the second set relay member 382a includes a conductive member 382e1 and an insulating member 382d1.
  • the conductive member 382e1 is arranged on the upper surface of the insulating member 382d1.
  • the second set relay member 382a is arranged at a position adjacent to the second set 12a in the first direction.
  • the second set relay member 382a is arranged at a position adjacent to the second positive electrode current terminal 92p.
  • the second set relay member 382b includes a conductive member 382e2 and an insulating member 382d2.
  • the conductive member 382e2 is arranged on the upper surface of the insulating member 382d2.
  • the second set relay member 382b extends in the second direction and is arranged at a position adjacent to the second sets 12b, 12c, and the third set 13a in the first direction via the third set relay member 383a. be done.
  • the second set relay member 382c includes a conductive member 382e3 and an insulating member 382d3.
  • the conductive member 382e3 is arranged on the upper surface of the insulating member 382d3.
  • the second set relay member 382c extends in the second direction and is arranged at a position adjacent to the second set 12d and the third set 13c in the first direction.
  • the second set relay member 382c is arranged at a position adjacent to the second negative current terminal 92n.
  • the third set relay member 383a includes a conductive member 383e1 and an insulating member 383d1.
  • the conductive member 383e1 is arranged on the upper surface of the insulating member 383d1.
  • the third set relay member 383a extends in the second direction and is arranged at a position adjacent to the second set 12b and the third set 13a in the first direction. Also, the third set relay member 383a is arranged at a position adjacent to the third positive electrode current terminal 93p.
  • the third set relay member 383b includes a conductive member 383e2 and an insulating member 383d2.
  • the conductive member 383e2 is arranged on the upper surface of the insulating member 383d2.
  • the third set relay member 383b extends in the second direction and is arranged at a position adjacent to the second set 12d, the third sets 13b and 13c in the first direction via the second set relay member 382c. be.
  • the third set relay member 383c includes a conductive member 383e3 and an insulating member 383d3.
  • the conductive member 383e3 is arranged on the upper surface of the insulating member 383d3.
  • the third set relay member 383c extends in the second direction and is arranged at a position adjacent to the third set 13d in the first direction. Also, the third set relay member 383c is arranged at a position adjacent to the third negative current terminal 93n.
  • the plurality of second sets 12a to 12d and the plurality of third sets are alternately arranged in the second direction.
  • a second set 12a, a third set 13b, a second set 12d, and a third set 13c are arranged in this order in the second direction.
  • a second set 12b, a third set 13a, a second set 12c, and a third set 13d are arranged in this order in the second direction.
  • the second sets 12a and 12b are arranged in the first direction, and the second sets 12c and 12d are arranged in the first direction.
  • the third sets 13a and 13b are arranged in a first direction and the third sets 13c and 13d are arranged in the first direction.
  • at least two second sets among the plurality of second sets 12a-12d may be arranged in the first direction.
  • At least two third sets among the plurality of third sets 13a-13d may be arranged in the first direction.
  • the second sets 12a-12d are electrically connected in series using the second wire W2 and the second set relay members 382a-382c.
  • the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12a and the p-side connection electrodes 72e of the second set 12b are connected by one or more second wires W2.
  • the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12b and the conductive members 382e2 of the relay members 382b for the second set are connected by one or more second wires W2.
  • the second wire W2 passes above the third set relay member 383a (that is, straddles the third set relay member 383a).
  • the third set relay member 383a is arranged between the second wire W2 and the main surface 21 . Therefore, the third set relay member 383a may be lower in height from the main surface 21 than the second set relay member 382b. This can suppress interference between the second wire W2 and the third set relay member 383a.
  • the conductive member 382e2 of the second set relay member 382b and the p-side connection electrode 72e of the second set 12c are connected by one or more second wires W2.
  • the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12c and the p-side connection electrodes 72e of the second set 12d are connected by one or more second wires W2.
  • the plurality of second sets 12a to 12d includes two second sets 12b and 12c adjacent in the second direction.
  • the second set relay member 382b is arranged at a position adjacent to the two second sets 12b and 12c in the first direction.
  • the n-side connection electrodes of the second semiconductor laser chip 52 of the second set 12b, one of the two second sets 12b and 12c, are combined with the p-side connection electrode 72e of the second set 12b. It is arranged between the relay member 382b and electrically connected to the second set relay member 382b using one or more second wires W2.
  • the p-side connection electrode 72e of the other second set 12c of the two second sets 12b and 12c is the n-side connection electrode of the second semiconductor laser chip 52 of the other second set 12c. It is arranged between the setting relay member 382b and electrically connected to the second setting relay member 382b.
  • the second positive electrode current terminal 92p and the p-side connection electrode 72e of the second set 12a are electrically connected using the second wire W2 and the second set relay member 382a. Specifically, the portion of the second positive electrode current terminal 92p located within the region surrounded by the frame member 30 and the conductive member 382e1 of the second set relay member 382a are combined into one or more second positive current terminals 92p. They are electrically connected using a wire W2. Also, the conductive member 382e1 and the p-side connection electrode 72e of the second set 12a are electrically connected using one or more second wires W2.
  • the second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12d are electrically connected using the second wire W2 and the second set relay member 382c. .
  • the portion of the second negative electrode current terminal 92n located within the region surrounded by the frame member 30 and the conductive member 382e3 of the second set relay member 382c are combined into one or more second terminals. They are electrically connected using a wire W2.
  • the conductive member 382e3 and the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12d are electrically connected using one or more second wires W2.
  • the plurality of second sets 12a to 12d are electrically connected in series. Further, current can be supplied to the second set of four electrically connected in series 12a-12d from the second positive current terminal 92p and the second negative current terminal 92n. Further, by using the second set relay member 382b adjacent to the second sets 12b and 12c in the first direction and the second set relay member 382c adjacent to the second set 12d in the first direction, the second The usage amount of the wire W2 can be reduced. Further, the second set relay member 382b is arranged at a position adjacent to the second mirror 62 of the second set 12b in the first direction.
  • the second set relay member 382c is arranged at a position adjacent to the second mirror 62 of the second set 12d in the first direction.
  • the second semiconductor laser chips 52 of the second set 12b and the second semiconductor laser chips 52 of the second set 12c are electrically connected bypassing the second mirror 62.
  • the second semiconductor laser chip 52 and the second negative current terminal 92n can be electrically connected bypassing the second mirror 62.
  • FIG. Therefore, interference between the second wire W2, the second mirror 62, and the second light can be suppressed.
  • the third sets 13a-13d are electrically connected in series using the third wire W3 and the third set relay members 383a-383c.
  • the n-side connection electrodes of the third semiconductor laser chips 53 of the third set 13a and the p-side connection electrodes 73e of the third set 13b are connected by one or more third wires W3.
  • the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13b and the conductive member 383e2 of the relay member 383b for the third set are connected by one or more third wires W3.
  • the conductive member 383e2 of the relay member 383b for the third set and the p-side connection electrode 73e of the third set 13c are connected by one or more third wires W3.
  • the n-side connection electrodes of the third semiconductor laser chips 53 of the third set 13c and the p-side connection electrodes 73e of the third set 13d are connected by one or more third wires W3.
  • the third wire W3 passes above the second set relay member 382c (that is, straddles the second set relay member 382c).
  • the second set relay member 382c is arranged between the third wire W3 and the main surface 21 . Therefore, the second set relay member 382c may be lower in height from the main surface 21 than the third set relay member 383b. Thereby, interference between the third wire W3 and the second set relay member 382c can be suppressed.
  • the plurality of third sets 13a to 13d includes two third sets 13b and 13c adjacent in the second direction.
  • the third set relay member 383b is arranged at a position adjacent to the two third sets 13b and 13c in the first direction.
  • the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13b, one of the two third sets 13b and 13c, is connected to the p-side connection electrode 73e of the third set 13b. It is arranged between the relay member 383b and electrically connected to the third set relay member 383b using one or more third wires W3.
  • the p-side connection electrode 73e of the other third set 13c of the two third sets 13b and 13c is the n-side connection electrode of the third semiconductor laser chip 53 of the other third set 13c. It is arranged between the setting relay member 383b and electrically connected to the third set relay member 383b.
  • the third positive current terminal 93p and the p-side connection electrode 73e of the third set 13a are electrically connected using the third wire W3 and the third set relay member 383a.
  • the portion of the third positive electrode current terminal 93p located within the region surrounded by the frame member 30 and the conductive member 383e1 of the relay member 383a for the third set are connected to one or more third terminals. They are electrically connected using a wire W3.
  • the conductive member 383e1 and the p-side connection electrode 73e of the third set 13a are electrically connected using one or more third wires W3.
  • the third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using the third wire W3 and the third set relay member 383c. Specifically, the portion of the third negative electrode current terminal 93n located within the region surrounded by the frame member 30 and the conductive member 383e3 of the relay member 383c for the third set are combined into one or more third terminals. They are electrically connected using a wire W3. Also, the conductive member 383e3 and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using one or more third wires W3.
  • the plurality of third sets 13a to 13d are electrically connected in series. Also, current can be supplied to the third set 13a-13d of four electrically connected in series from the third positive current terminal 93p and the third negative current terminal 93n. Furthermore, the third set relay members 383a and 383b are arranged at positions adjacent to the third mirrors 63 of the third sets 13a and 13c in the first direction, respectively. By using such a third set relay member 383a, it is possible to bypass the third mirror 63 and electrically connect the third positive current terminal 93p and the third semiconductor laser chip 53 of the third set 13a.
  • the third semiconductor laser chip 53 of the third set 13b and the third semiconductor laser chip 53 of the third set 13c can be electrically connected. Therefore, interference between the third wire W3, the third mirror 63, and the third light can be suppressed.
  • the polarization directions are aligned and high-power light can be emitted. .
  • Embodiment 5 A multi-wavelength light source module according to Embodiment 5 will be described.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 310 according to the fourth embodiment mainly in the arrangement of the first set 11a-11j.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 11, focusing on differences from the multi-wavelength light source module 310 according to the fourth embodiment.
  • FIG. 11 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 410 according to this embodiment.
  • FIG. 11 shows a plan view of the multi-wavelength light source module 410 with the cover removed.
  • a multi-wavelength light source module 410 includes a base 20, a plurality of first sets 11a-11j, and a plurality of second sets 12a-12d.
  • the multi-wavelength light source module 410 includes a plurality of third sets 13a-13d, a frame member 30, two first positive current terminals 91p, two first negative current terminals 91n, a second positive current terminal 92p, a second negative current terminal 92n, a third positive current terminal 93p, a third negative current terminal 93n, a first wire W1, a second wire W2, a third wire W3, It further includes four first set relay members 81, second set relay members 382a to 382c, and third set relay members 383a to 383c.
  • the multi-wavelength light source module 410 further includes lids having lenses arranged at positions corresponding to the respective sets, as in the multi-wavelength light source module 10 according to the first embodiment. .
  • the plurality of first sets 11a to 11j includes a first group including one or more first sets 11a to 11e among the plurality of first sets, and a first A second group including one or more first sets 11a-11e included in the group and one or more different first sets 11f-11j, including a plurality of second sets 12a-12d and a plurality of third sets 13a 13d are positioned between the first and second groups.
  • each of the second sets 12a to 12d and each of the third sets 13a to 13d are alternately arranged in the second direction. It is also possible to suppress the bias in the intensity distribution of the light and the third light.
  • the polarization directions are aligned and high-power light can be emitted. .
  • Embodiment 6 A multi-wavelength light source module according to Embodiment 6 will be described.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 410 according to the fifth embodiment mainly in the arrangement of the first set 11a-11e.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 12, focusing on differences from the multi-wavelength light source module 410 according to the fourth embodiment.
  • FIG. 12 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 510 according to this embodiment.
  • FIG. 12 shows a plan view of the multi-wavelength light source module 510 with the lid removed.
  • a multi-wavelength light source module 510 includes a base 20, a plurality of first sets 11a-11j, and a plurality of second sets 12a-12d.
  • the multi-wavelength light source module 510 includes a plurality of third sets 13a-13d, a frame member 30, two first positive current terminals 91p, two first negative current terminals 91n, a second positive current terminal 92p, a second negative current terminal 92n, a third positive current terminal 93p, a third negative current terminal 93n, a first wire W1, a second wire W2, a third wire W3, It further includes four first set relay members 81, second set relay members 382a to 382c, and third set relay members 383a to 383c.
  • the multi-wavelength light source module 510 further includes lids having lenses arranged at positions corresponding to each set, as in the multi-wavelength light source module 10 according to Embodiment 1. .
  • the plurality of first sets 11a to 11j include one or more first sets 11a to 11e among the plurality of first sets. and a second group including one or more first sets 11f to 11j different from the one or more first sets 11a to 11e included in the first group, and a plurality of second sets 12a to 12d and a plurality of third sets 13a-13d are arranged between the first and second groups.
  • the first semiconductor laser chip 51 of each of the first sets 11a to 11j is positioned closer to the end of the main surface 21 of the base 20 than the first mirror 61 in the first direction. are placed.
  • disposing the first semiconductor laser chip 51 at a position close to the edge of the main surface 21 of the base 20 has better heat dissipation characteristics. Therefore, in this embodiment, it is possible to improve the heat dissipation characteristics of the first semiconductor laser chip 51 . Thereby, the characteristics of the first semiconductor laser chip 51 can be improved.
  • each set can be arranged symmetrically with respect to a straight line extending in the second direction. Thereby, the bias of the intensity distribution of the first light, the second light, and the third light can be further suppressed.
  • the polarization directions are aligned and high-power light can be emitted. .
  • Embodiment 7 A multi-wavelength light source module according to Embodiment 7 will be described.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 410 according to the fifth embodiment mainly in the arrangement of each set.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 13, focusing on differences from the multi-wavelength light source module 410 according to the fourth embodiment.
  • FIG. 13 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 610 according to this embodiment.
  • FIG. 13 shows a plan view of the multi-wavelength light source module 610 with the lid removed.
  • a multi-wavelength light source module 610 includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12d.
  • the multi-wavelength light source module 610 includes a plurality of third sets 13a-13d, a frame member 30, two first positive current terminals 91p, two first negative current terminals 91n, two second positive current terminals 92p, two second negative current terminals 92n, two third positive current terminals 93p, two third negative current terminals 93n, a first wire W1, It further includes a second wire W2, a third wire W3, four first set relay members 81, second set relay members 382a to 382f, and third set relay members 383a to 383f.
  • the multi-wavelength light source module 610 further includes lids having lenses arranged at positions corresponding to each set, as in the multi-wavelength light source module 10 according to the first embodiment. .
  • the second set relay members 382d to 382f have the same configuration as the second set relay members 382a to 382c, respectively.
  • the third set relay members 383d to 383f have the same configuration as the third set relay members 383a to 383c.
  • the first sets 11a to 11d are electrically connected in series using the first wire W1 and the first set relay member 81, like the first sets 11a to 11e according to the fourth embodiment.
  • the first sets 11e to 11h are also electrically connected in series using the first wire W1 and the first set relay member 81, like the first sets 11a to 11e according to the fourth embodiment.
  • the second sets 12a and 12b are electrically connected in series using the second wire W2 and the second set relay members 382a to 382c, like the second sets 12b and 12c according to the fourth embodiment. be.
  • the second sets 12c and 12d are also electrically connected in series using the second wire W2 and the second set relay members 382d to 382f. be.
  • the third sets 13a and 13b are electrically connected in series using the third wire W3 and third set relay members 383a to 383c, like the third sets 13b and 13c according to the fourth embodiment. be.
  • the third sets 13c and 13d are also electrically connected in series using the third wire W3 and the third set relay members 383d to 383f, like the third sets 13b and 13c according to the fourth embodiment. be.
  • a multi-wavelength light source module 610 includes a plurality of units arranged in a matrix on the main surface 21 .
  • Each of the plurality of units includes at least one first set out of the plurality of first sets 11a-11h, at least one second set out of the plurality of second sets 12a-12d, and a plurality of third sets and a third set of at least one of 13a-13d.
  • the inside of the dashed frame shown in FIG. 13 corresponds to each unit.
  • the multi-wavelength light source module 610 includes units including first sets 11a and 11b, second set 12a and third set 13a, and first sets 11c and 11d, second set 12b and third set 13b.
  • the multi-wavelength light source module 610 has four units arranged in a matrix of two rows and two columns. By arranging a plurality of units in a matrix, each of which emits the first light, the second light, and the third light, the light from the multi-wavelength light source module 610 becomes the first light and the second light. , and the bias of the intensity distribution of the third light can be suppressed.
  • the first light may be emitted from the first set toward the area where the second set and the third set are arranged.
  • the first light may be emitted from the first sets 11a and 11b in a direction toward the area where the second set 12a and the third set 13a are arranged.
  • the first mirrors 61 of the first sets 11a and 11b can be brought closer to the second mirrors 62 of the second set 12a and the third mirrors 63 of the third set 13a.
  • the first light emitted from the multi-wavelength light source module 610 and the second light and the third light can be made close to each other. Therefore, the uniformity of the intensity distribution of light emitted from the multi-wavelength light source module 610 can be improved.
  • the polarization directions are aligned and high-power light can be emitted. .
  • each set of multi-wavelength light source modules 610 can also be expressed as follows.
  • the multi-wavelength light source module 610 comprises a plurality of first rows and a plurality of second rows. Each of the plurality of first rows includes a partial first set among the plurality of first sets 11a to 11h, and the partial first sets are arranged in a row.
  • the multi-wavelength light source module 610 comprises two first rows. One first row contains first sets 11a-11d arranged in a second direction, and the other first row contains first sets 11e-11h arranged in a second direction.
  • Each of the plurality of second columns includes a portion of the second sets of the plurality of second sets 12a-12d and a portion of the plurality of third sets 13a-13d of the third sets.
  • the part of the second set and the part of the third set are arranged in a row parallel to the arrangement direction of each of the plurality of first rows.
  • the multi-wavelength light source module 610 comprises two second rows.
  • One second row comprises a second set 12a and 12b and a third set 13a and 13b arranged in a second direction
  • the other first row comprises a second set arranged in a second direction.
  • Each of the plurality of first rows and each of the plurality of second rows are alternately arranged in a first direction perpendicular to the arrangement direction of each of the plurality of first rows.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to the first embodiment mainly in the relationship between the arrangement direction of each set and the optical axis direction.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 14, focusing on differences from the multi-wavelength light source module 110 according to the first embodiment.
  • FIG. 14 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 710 according to this embodiment.
  • FIG. 14 shows a plan view of the multi-wavelength light source module 710 with the lid removed.
  • a multi-wavelength light source module 710 includes a base 20, a plurality of first sets 11a-11c, and a plurality of second sets 12a-12c.
  • the multi-wavelength light source module 710 includes a plurality of third sets 13a-13c, a frame member 30, a first positive current terminal 91p, a first negative current terminal 91n, and a second positive current terminal 92p.
  • the multi-wavelength light source module 710 further includes lids having lenses arranged at positions corresponding to each set, like the multi-wavelength light source module 10 according to Embodiment 1. .
  • the outline of each lens included in the lid is indicated by a dashed line.
  • the second set relay member 782 and third set relay member 783 according to the present embodiment have the same configuration as the first set relay member 81 .
  • the lid according to this embodiment has three first lenses 741 , three second lenses 742 and three third lenses 743 .
  • the first optical axis of each of the first sets 11a-11c is parallel to the first direction, like the first sets 11a-11c according to the first embodiment.
  • the first direction is inclined with respect to the horizontal direction and the vertical direction of FIG.
  • the second optical axis of each of the second sets 12a-12c is parallel to the second direction, like the second sets 12a-12c according to the first embodiment.
  • the second direction is inclined with respect to the horizontal direction and the vertical direction of FIG.
  • the third optical axis of each of the third sets 13a-13c is parallel to the second direction, like the third sets 13a-13c according to the first embodiment.
  • the arrangement direction of the first sets 11a to 11c, the second sets 12a to 12c, and the third sets 13a to 13c is the horizontal direction in FIG. and inclined with respect to the second direction.
  • the arrangement direction of the first set 11a-11c is tilted with respect to the first optical axis.
  • the arrangement direction of the second sets 12a-12c is inclined with respect to the second optical axis.
  • the arrangement direction of the third sets 13a-13c is inclined with respect to the third optical axis.
  • the second mirror 62 of the second set 12a is in contact with the second submount 72 of the second set 12b adjacent to the second set 12a in the first direction.
  • a second mirror 62 of the second set 12b contacts a second submount 72 of the second set 12c adjacent to the second set 12b in the first direction.
  • the third mirror 63 of the third set 13a is in contact with the third submount 73 of the third set 13b adjacent to the third set 13a in the first direction.
  • the third mirror 63 of the third set 13b contacts the third submount 73 of the third set 13c adjacent to the third set 13b in the first direction.
  • the second sets 12b and 12c are in contact with the first sets 11a and 11b, respectively, in the first direction. Specifically, the second submount 72 of the second set 12b contacts the first mirror 61 of the first set 11a in the first direction. A second submount 72 of the second set 12c contacts the first mirror 61 of the first set 11b in a first direction.
  • the second sets 12a and 12b are in contact with the third sets 13b and 13c, respectively, in the first direction.
  • the second mirror 62 of the second set 12a contacts the third submount 73 of the third set 13b in the first direction.
  • a second mirror 62 of the second set 12b contacts a third submount 73 of the third set 13c in a first direction.
  • the gap between two adjacent sets can be reduced, so the area required for arranging each set can be further reduced.
  • the second set 12b contacts one first set 11a and one third set 13c, but two or more first sets and two or more second sets May contact with three sets. That is, at least one second set out of the plurality of second sets 12a to 12c includes at least one first set out of the plurality of first sets 11a to 11c and a plurality of third sets 13a to 13c. At least one of the third sets may be tangent in the first direction. At least one first set out of the plurality of first sets 11a to 11c includes at least one second set out of the plurality of second sets 12a to 12c and a plurality of third sets 13a to 13c. At least one of the third sets may be tangent in the first direction.
  • At least one third set out of the plurality of third sets 13a to 13c includes at least one first set out of the plurality of first sets 11a to 11c and at least one of the plurality of second sets 12a to 12c. It may be in contact with at least one second set of them in the first direction.
  • each lens of the lid may be appropriately designed according to the layout of each set as described above.
  • the shape of each of the three first lenses 741 included in the lid according to this embodiment is the shape of each of the three second lenses 742 and the shape of each of the three third lenses.
  • the shape of each of the lenses 743 is different.
  • the shape of each of the three second lenses 742 is different from the shape of each of the three third lenses 743 .
  • the first sets 11a to 11c are electrically connected in series using one or more first wires W1 and two first set relay members 81, similarly to the first sets 11a to 11e according to the first embodiment. Connected.
  • the second sets 12a-12c are electrically connected in series using one or more second wires W2 and two second set relay members 782, similar to the first sets 11a-11c.
  • the third sets 13a-13c are electrically connected in series using one or more third wires W3 and two third set relay members 783, similar to the first sets 11a-11c.
  • FIG. 14 shows the minimum number of first wire W1, second wire W2, and third wire W3 in order to avoid complication of the drawing, but the number of each wire is There may be more than the example shown in 14.
  • Embodiment 9 A multi-wavelength light source module according to Embodiment 9 will be described.
  • the multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to the first embodiment mainly in the arrangement direction of each set.
  • the multi-wavelength light source module according to the present embodiment will be described below with reference to FIG. 15, focusing on differences from the multi-wavelength light source module 10 according to the first embodiment.
  • FIG. 15 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module 810 according to the ninth embodiment.
  • FIG. 15 shows a plan view of the multi-wavelength light source module 810 with the lid removed.
  • a multi-wavelength light source module 810 includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12e.
  • the multi-wavelength light source module 810 includes a plurality of third sets 13a-13e, a frame member 30, two first positive current terminals 91p, two first negative current terminals 91n, a second positive current terminal 92p, a second negative current terminal 92n, a third positive current terminal 93p, a third negative current terminal 93n, a first wire W1, a second wire W2, a third wire W3, It further includes two first set relay members 881 , two second set relay members 882 , and two third set relay members 883 .
  • the multi-wavelength light source module 810 further includes lids having lenses arranged at positions corresponding to each set, like the multi-wavelength light source module 10 according to Embodiment 1. .
  • Each of the plurality of first sets 11a to 11h according to the present embodiment includes a first semiconductor laser chip 51, a first mirror 61, and a first submount, similarly to each first set according to the first embodiment. 71.
  • the first optical axis of the first semiconductor laser chip 51 is parallel to the first direction parallel to the main surface 21, as in the first embodiment.
  • the horizontal direction in FIG. 15 is the first direction.
  • the plurality of first sets 11a-11h are arranged in a first direction. More specifically, the four first sets 11a-11d and the four first sets 11e-11h are each arranged in a row in the first direction. That is, the first sets 11a-11h are arranged in two rows in the first direction.
  • Each of the plurality of second sets 12a to 12e according to the present embodiment includes a second semiconductor laser chip 52, a second mirror 62, and a second submount, similarly to each second set according to the first embodiment. 72.
  • the second optical axis of the second semiconductor laser chip 52 is parallel to the second direction parallel to the main surface 21, as in the first embodiment.
  • the vertical direction in FIG. 15 is the second direction.
  • the second direction is a direction perpendicular to the first direction.
  • the plurality of second sets 12a-12e are arranged in a first direction. More specifically, the plurality of second sets 12a-12e are arranged in a row in the first direction.
  • Each of the plurality of third sets 13a to 13e according to the present embodiment includes a third semiconductor laser chip 53, a third mirror 63, and a third submount, similarly to each third set according to the first embodiment. 73.
  • the third optical axis of the third semiconductor laser chip 53 is parallel to the second direction parallel to the main surface 21, as in the first embodiment.
  • the plurality of third sets 13a-13e are arranged in the first direction. More specifically, the plurality of third sets 13a-13e are arranged in a row in the first direction.
  • the first set relay member 881 is a member arranged at a position adjacent to the plurality of first sets 11a to 11h.
  • one first set relay member 881 is arranged at a position adjacent to the plurality of first sets 11a to 11d in the second direction
  • the other first set relay member 881 is arranged at a position adjacent to the plurality of first sets 11a to 11d. They are arranged adjacent to the first sets 11e to 11h in the second direction.
  • the first set relay member 881 includes a plurality of conductive members 81e1 to 81e5.
  • the material of each of the conductive members 81e1 to 81e5 is the same as that of the conductive member 81e.
  • the first set relay member 881 further includes an insulating member 881d.
  • the insulating member 881 d is a member containing an insulating material and arranged on the main surface 21 of the base 20 .
  • the configuration of the insulating member 881d is the same as the configuration of the insulating member 81d.
  • the insulating member 881d has an elongated shape extending in the first direction.
  • a plurality of conductive members 82e1 to 81e5 are arranged electrically insulated from each other on the upper surface of the insulating member 881d.
  • the plurality of conductive members 81e1 to 81e5 are arranged in the first direction.
  • One conductive member 81e1 of the two conductive members 81e1 is arranged adjacent to the first positive current terminal 91p and the first set 11a.
  • the other conductive member 81e1 of the two conductive members 81e1 is arranged adjacent to the first positive current terminal 91p and the first set 11e.
  • One conductive member 81e2 of the two conductive members 81e2 is arranged at a position adjacent to the first set 11a and the first set 11b.
  • the other conductive member 81e2 of the two conductive members 81e2 is arranged at a position adjacent to the first set 11e and the first set 11f.
  • One conductive member 81e3 of the two conductive members 81e3 is arranged at a position adjacent to the first set 11b and the first set 11c.
  • the other conductive member 81e3 of the two conductive members 81e3 is arranged at a position adjacent to the first set 11f and the first set 11g.
  • One conductive member 81e4 of the two conductive members 81e4 is arranged at a position adjacent to the first set 11c and the first set 11d.
  • the other conductive member 81e4 of the two conductive members 81e4 is arranged at a position adjacent to the first set 11g and the first set 11h.
  • One of the two conductive members 81e5 is positioned adjacent to the first set 11d and the first negative current terminal 91n.
  • the other conductive member 81e5 of the two conductive members 81e5 is positioned adjacent to the first set 11h and the first negative current terminal 91n.
  • the first set relay member 881 may include a plurality of insulating members.
  • the first set relay member 881 may include a plurality of insulating members in which the plurality of conductive members 81e1 to 81e5 are respectively arranged.
  • the second set relay member 882 is a member arranged at a position adjacent to the plurality of second sets 12a to 12e.
  • the two second set relay members 882 are arranged at positions adjacent to the second sets 12a and 12e in the first direction.
  • the second set relay member 882 includes a conductive member 882e.
  • the configuration of the conductive member 882e is similar to that of the conductive member 81e.
  • the second set relay member 882 further includes an insulating member 882d.
  • the configuration of the insulating member 882d is similar to that of the insulating member 81d.
  • the third set relay member 883 is a member arranged at a position adjacent to the plurality of third sets 13a to 13e.
  • the two third set relay members 883 are arranged at positions adjacent to the third sets 13a and 13e in the first direction.
  • the third set relay member 883 includes a conductive member 883e.
  • the configuration of the conductive member 883e is similar to that of the conductive member 81e.
  • the third set relay member 883 further includes an insulating member 883d.
  • the configuration of the insulating member 883d is similar to that of the insulating member 81d.
  • the plurality of first sets 11a to 11d are electrically connected in series using the plurality of first wires W1 and the relay member 881 for the first set.
  • the above first wire W1 and the conductive member 81e2 of the relay member 881 for the first set are used to electrically connect.
  • the n-side connection electrode (not shown) of the first semiconductor laser chip 51 of the first set 11a and the conductive member 81e2 are connected by one or more first wires W1.
  • the conductive member 81e2 and the p-side connection electrode 71e of the first set 11b are connected by one or more first wires W1.
  • the p-side connection electrode 71 e is electrically connected to a p-side electrode (not shown) of the first semiconductor laser chip 51 mounted on the first submount 71 .
  • the n-side connection electrodes of the first semiconductor laser chips 51 of the first set 11a and the p-side electrodes of the first semiconductor laser chips 51 of the first set 11b are electrically connected.
  • the n-side connection electrodes of the first semiconductor laser chips 51 of the first set 11b and the p-side electrodes of the first semiconductor laser chips 51 of the first set 11c are connected to the first wire W1 and the conductive member 81e3. are electrically connected using The n-side connection electrodes of the first semiconductor laser chips 51 of the first set 11c and the p-side electrodes of the first semiconductor laser chips 51 of the first set 11d are connected using the first wire W1 and the conductive member 81e4. electrically connected.
  • the plurality of first sets 11e to 11h are electrically connected in series using the plurality of first wires W1 and the first set relay member 881, like the plurality of first sets 11a to 11d.
  • the first positive current terminal 91p and the p-side connection electrode 71e of the first set 11a are electrically connected using the first wire W1 and the relay member 881 for the first set. Specifically, the portion of the first positive electrode current terminal 91p located within the region surrounded by the frame member 30 and the conductive member 81e1 of the first set relay member 881 are combined into one or more first positive current terminals 91p. They are electrically connected using a wire W1. Also, the conductive member 81e1 and the p-side connection electrode 71e of the first set 11a are electrically connected using one or more first wires W1. Similarly, the first positive current terminal 91p and the p-side connection electrode 71e of the first set 11e are electrically connected using the first wire W1 and the relay member 881 for the first set.
  • the first negative electrode current terminal 91n and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11d are electrically connected using the first wire W1 and the first set relay member 881. .
  • the portion of the first negative electrode current terminal 91n located within the region surrounded by the frame member 30 and the conductive member 81e5 of the first set relay member 881 are combined into one or more first electrode current terminals. They are electrically connected using a wire W1.
  • the conductive member 81e5 and the n-side connection electrodes of the first semiconductor laser chips 51 of the first set 11d are electrically connected using one or more first wires W1.
  • the first negative electrode current terminal 91n and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11h are electrically connected using the first wire W1 and the relay member 881 for the first set. Connected.
  • the plurality of second sets 12a-12e are electrically connected in series using the plurality of second wires W2. Specifically, the n-side connection electrode (not shown) of the second semiconductor laser chip 52 of the second set 12a and the p-side connection electrode 72e formed on the adjacent second submount 72 of the second set 12b are connected by one or more second wires W2.
  • the p-side connection electrode 72 e is electrically connected to the p-side electrode (not shown) of the second semiconductor laser chip 52 mounted on the second submount 72 .
  • the n-side connection electrodes of the second semiconductor laser chips 52 of the second set 12a and the p-side electrodes of the second semiconductor laser chips 52 of the second set 12b are electrically connected.
  • the electrodes 72e are electrically connected to each other.
  • the second positive current terminal 92p and the p-side connection electrode 72e of the second set 12a are electrically connected using a second wire W2 and one relay member 882 for the second set.
  • the single second set relay member 882 is arranged at a position adjacent to the second positive current terminal 92p and the second set 12a.
  • a portion of the second positive electrode current terminal 92p located within the region surrounded by the frame member 30 and the conductive member 882e of the second set relay member 882 are connected using one or more second wires W2. electrically connected.
  • the conductive member 882e of the second set relay member 882 and the p-side connection electrode 72e of the second set 12a are electrically connected using one or more second wires W2.
  • the second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12e are electrically connected using one second set relay member 882 and a second wire W2. be done.
  • the single second set relay member 882 is arranged at a position adjacent to the second negative current terminal 92n and the second set 12e. A portion of the second negative current terminal 92n located within the region surrounded by the frame member 30 and the conductive member 882e of the second set relay member 882 are connected by using one or more second wires W2. electrically connected.
  • the conductive member 882e of the second set relay member 882 and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12e are electrically connected using one or more second wires W2. be.
  • the plurality of third sets 13a-13e are electrically connected in series using the plurality of third wires W3.
  • the n-side connection electrode (not shown) of the third semiconductor laser chip 53 of the third set 13a and the p-side connection electrode 73e formed on the third submount 73 of the adjacent third set 13b are connected by one or more third wires W3.
  • the p-side connection electrode 73 e is electrically connected to a p-side electrode (not shown) of the third semiconductor laser chip 53 mounted on the third submount 73 .
  • the n-side connection electrodes of the third semiconductor laser chips 53 of the third set 13a and the p-side electrodes of the third semiconductor laser chips 53 of the third set 13b are electrically connected.
  • the electrodes 73e are electrically connected to each other.
  • the third positive current terminal 93p and the p-side connection electrode 73e of the third set 13a are electrically connected using a third wire W3 and one relay member 883 for the third set.
  • the single third set relay member 883 is arranged at a position adjacent to the third positive current terminal 93p and the third set 13a.
  • a portion of the third positive electrode current terminal 93p located within the region surrounded by the frame member 30 and the conductive member 883e of the relay member 883 for the third set are connected using one or more third wires W3. electrically connected.
  • the conductive member 883e of the relay member 883 for the third set and the p-side connection electrode 73e of the third set 13a are electrically connected using one or more third wires W3.
  • the third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13e are electrically connected using one third set relay member 883 and a third wire W3. be done.
  • the single third set relay member 883 is arranged adjacent to the third negative current terminal 93n and the third set 13e.
  • a portion of the third negative electrode current terminal 93n located within the region surrounded by the frame member 30 and the conductive member 883e of the third set relay member 883 are connected by using one or more third wires W3. electrically connected.
  • the conductive member 883e of the relay member 883 for the third set and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13e are electrically connected using one or more third wires W3. be.
  • the multi-wavelength light source module 810 according to the present embodiment also has the same effect as the multi-wavelength light source module 10 according to the first embodiment.
  • the multi-wavelength light source module according to the present disclosure has been described based on each embodiment, but the present disclosure is not limited to each of the above embodiments.
  • each multi-wavelength light source module includes the frame member 30, but the frame member 30 is not an essential component of each light emitting element.
  • each lid of each multi-wavelength light source module may have a portion corresponding to the frame member.
  • each lid may be supported on the base 20 by a member other than the frame member 30 .
  • each set has one independent mirror, but the configuration of the mirrors is not limited to this.
  • the mirrors of each adjacent set may be integrated.
  • FIGS. 16 to 18 FIG. 16 is a plan view of the multi-wavelength light source module 10a according to the modification of the first embodiment, with the cover removed.
  • FIG. 17 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module 110a according to the modification of the second embodiment.
  • FIG. 18 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module 610a according to the modification of the seventh embodiment.
  • first sets of first sets adjacent in the second direction have first A mirror 61 is integrated.
  • the first mirrors 61 of the adjacent first sets are integrally formed.
  • the first mirrors 61 of the five first sets 11a to 11e and the first mirrors 61 of the five first sets 11f to 11j are integrated.
  • the first reflecting surfaces 61a of the plurality of integrated first mirrors 61 may be in the same plane.
  • the first reflecting surfaces 61a of the first mirrors 61 of the five first sets 11a to 11e and the first reflecting surfaces 61a of the first mirrors 61 of the five first sets 11f to 11j are They are in the same plane.
  • the second mirror 62 of one of the plurality of second sets 12a to 12d and the second mirror 62 of the plurality of third sets 13a to 13d and the third mirror 63 of one third set adjacent in the first direction may be integrated.
  • the second mirrors 62 of the second set 12a-12d and the third mirrors 63 of the third set 13a-13d are integrated.
  • the second set relay member 82 is provided with the first sets 11a to 11a, as in the first embodiment, in order to suppress interference with the second mirror 62 and the third mirror. 11j and the second set 12a-12d.
  • the integrated second reflecting surface 62a of the second mirror 62 and the third reflecting surface 63a of the third mirror 63 may be on the same plane.
  • the first reflecting surfaces 61a of the first mirrors 61 of the five first sets 11a to 11e and the first reflecting surfaces 61a of the first mirrors 61 of the five first sets 11f to 11j are They are in the same plane.
  • the multi-wavelength light source module 110a In the multi-wavelength light source module 110a according to the modification of the second embodiment, as shown in FIG. 17, four first sets 11a to 11d of the first mirrors 61 and the second The first mirrors 61 of the four first sets 11e to 11h adjacent in two directions are respectively integrated.
  • the first reflecting surfaces 61a of the first mirrors 61 of the four first sets 11a to 11d and the first reflecting surfaces 61a of the first mirrors 61 of the four first sets 11e to 11h are They are in the same plane.
  • a second set of four mirrors 12a-12d adjacent in the first direction and a third set of four mirrors 13a-13d adjacent in the first direction. are integrated with each other.
  • the second reflecting surfaces 62a of the second mirrors 62 of the four second sets 12a to 12d and the third reflecting surfaces 63a of the third mirrors 63 of the four third sets 13a to 13d are in the same plane.
  • a multi-wavelength light source module 610a In a multi-wavelength light source module 610a according to a modification of Embodiment 7, as shown in FIG. 18, two first sets 11a and 11b of first mirrors 61 and two A first set 11c and 11d of first mirrors 61, two first sets 11e and 11f of first mirrors 61, and two first sets 11g and 11h of first mirrors 61 are integrated respectively.
  • the first reflecting surfaces 61a of the first mirrors 61 of the two first sets 11a and 11b, the first reflecting surfaces 61a of the first mirrors 61 of the two first sets 11c and 11d, and two The first reflecting surfaces 61a of the first mirrors 61 of the first set 11e and 11f and the first reflecting surfaces 61a of the first mirrors 61 of the two first sets 11g and 11h are coplanar, respectively.
  • the second mirror 62 of the second set 12a and the third mirror 63 of the third set 13a adjacent in the second direction are integrated, and the second mirror 63 of the second set 12b is integrated.
  • the second mirror 62 and the third mirror 63 of the third set 13b are integrated, the second mirror 62 of the second set 12c and the third mirror 63 of the third set 13c are integrated, and the second The second mirror 62 of the set 12d and the third mirror 63 of the third set 13d are integrated.
  • the integrated second reflecting surface 62a of the second mirror 62 and the integrated third reflecting surface 63a of the third mirror 63 are in different planes.
  • a plurality of mirrors may be integrated.
  • the first mirrors 61 of the first sets 11a to 11e and the first mirrors 61 of the first sets 11f to 11j may be integrated.
  • second mirrors 62 of the second set 12a and 12b, second mirrors 62 of the second set 12c and 12d, third mirrors 63 of the third set 13a and 13b, and third mirrors of the third set 13c and 13d. 63 may be integrated respectively.
  • each submount of the multi-wavelength light source module according to each of the above embodiments is not an essential component.
  • Each semiconductor laser chip may be directly mounted on the base 20 . In this manner, each semiconductor laser chip may be mounted directly on the main surface 21 of the base 20 or via a submount.
  • each of the plurality of first sets has the same configuration, but they may have different configurations.
  • Each of the plurality of second sets may also have different configurations.
  • Each of the plurality of third sets may also have different configurations.
  • the first semiconductor laser chips of the plurality of arranged first sets emit the first light in the same direction.
  • a first semiconductor laser chip that emits the first light in the same direction and in the opposite direction may be included.
  • each relay member and the conductive members are arranged on the main surface 21 via the insulating member.
  • a conductive member may be directly arranged on the major surface 21 .
  • each relay member may not include an insulating member.
  • the layout of the plurality of first sets 11a to 11j according to Embodiment 5 or Embodiment 6, the plurality of second sets 12a to 12d and the plurality of third sets 13a to 13a according to Embodiment 1 13d layout may be combined.
  • the multi-wavelength light source module includes a plurality of first sets, a plurality of second sets, and a plurality of third sets, but the multi-wavelength light source module includes a plurality of third sets does not have to be That is, the multi-wavelength light source module may comprise only the plurality of first sets and the plurality of second sets among the plurality of first sets, the plurality of second sets and the plurality of third sets.
  • each of the plurality of first sets has a first semiconductor laser chip consisting of a GaInP semiconductor laser chip that emits a TM mode red laser
  • each of the second sets has a TE mode blue laser chip.
  • the multi-wavelength light source module may comprise multiple first sets, multiple second sets and only one third set.
  • each of the plurality of first sets has a first semiconductor laser chip composed of a GaInP-based semiconductor laser chip that emits a TM mode red laser
  • each of the plurality of second sets has a TE mode laser chip.
  • a second semiconductor laser chip comprising a GaInN semiconductor laser chip for emitting a green laser
  • a third set comprising a third semiconductor laser chip comprising a GaInN semiconductor laser chip for emitting a TE mode blue laser. good too.
  • the multi-wavelength light source module of the present disclosure can be applied to, for example, a time-resolved projector including a single liquid crystal.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un module de source lumineuse à longueurs d'onde multiples (10) comprenant une pluralité de premiers ensembles et une pluralité de seconds ensembles disposés sur une surface principale (21) d'un socle (20). Les premiers ensembles comprennent une première puce laser à semi-conducteur (51) ayant un premier axe optique parallèle à la surface principale (21) et émettant une première lumière d'une première bande de longueur d'onde, et un premier miroir (61) réfléchissant la première lumière dans une direction perpendiculaire à la surface principale (21). Les seconds ensembles comprennent une seconde puce laser à semi-conducteur (52) ayant un second axe optique parallèle à la surface principale (21) et émettant une seconde lumière d'une seconde bande de longueur d'onde différente de la première bande de longueur d'onde, et un second miroir (62) réfléchissant la seconde lumière dans une direction perpendiculaire à la surface principale (21). Le premier axe optique est perpendiculaire au second axe optique. La direction de polarisation de la première lumière se propageant depuis la première puce laser à semi-conducteur (51) vers le premier miroir (61) et la direction de polarisation de la seconde lumière se propageant depuis la seconde puce laser à semi-conducteur (52) vers le second miroir (62) sont mutuellement orthogonales.
PCT/JP2022/028206 2021-08-06 2022-07-20 Module de source de lumineuse à longueurs d'onde multiples WO2023013418A1 (fr)

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JP2001083460A (ja) * 1999-09-14 2001-03-30 Hamamatsu Photonics Kk レーザ装置
JP2002156594A (ja) * 2000-11-21 2002-05-31 Ricoh Co Ltd マルチビーム光源装置・マルチビーム走査装置・画像形成装置
JP2011049338A (ja) * 2009-08-27 2011-03-10 Sanyo Electric Co Ltd 発光装置および光装置
WO2013113547A1 (fr) * 2012-01-31 2013-08-08 Osram Gmbh Unité de conversion, ensemble laser, système d'éclairage, procédé pour produire une unité de conversion et procédé pour faire fonctionner un ensemble laser
JP2016219779A (ja) * 2015-05-20 2016-12-22 日亜化学工業株式会社 発光装置
US20190094673A1 (en) * 2017-09-26 2019-03-28 Qingdao Hisense Laser Display Co., Ltd. Laser array, laser light soure and laser projection device
US20200083664A1 (en) * 2018-09-06 2020-03-12 Nichia Corporation Light emitting device
JP2020072116A (ja) * 2018-10-29 2020-05-07 日亜化学工業株式会社 光源装置
JP2020154209A (ja) * 2019-03-22 2020-09-24 日亜化学工業株式会社 光源装置および光学エンジン
JP2020194916A (ja) * 2019-05-29 2020-12-03 日亜化学工業株式会社 発光装置
WO2021213106A1 (fr) * 2020-04-21 2021-10-28 青岛海信激光显示股份有限公司 Laser et dispositif de projection

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001083460A (ja) * 1999-09-14 2001-03-30 Hamamatsu Photonics Kk レーザ装置
JP2002156594A (ja) * 2000-11-21 2002-05-31 Ricoh Co Ltd マルチビーム光源装置・マルチビーム走査装置・画像形成装置
JP2011049338A (ja) * 2009-08-27 2011-03-10 Sanyo Electric Co Ltd 発光装置および光装置
WO2013113547A1 (fr) * 2012-01-31 2013-08-08 Osram Gmbh Unité de conversion, ensemble laser, système d'éclairage, procédé pour produire une unité de conversion et procédé pour faire fonctionner un ensemble laser
JP2016219779A (ja) * 2015-05-20 2016-12-22 日亜化学工業株式会社 発光装置
US20190094673A1 (en) * 2017-09-26 2019-03-28 Qingdao Hisense Laser Display Co., Ltd. Laser array, laser light soure and laser projection device
US20200083664A1 (en) * 2018-09-06 2020-03-12 Nichia Corporation Light emitting device
JP2020072116A (ja) * 2018-10-29 2020-05-07 日亜化学工業株式会社 光源装置
JP2020154209A (ja) * 2019-03-22 2020-09-24 日亜化学工業株式会社 光源装置および光学エンジン
JP2020194916A (ja) * 2019-05-29 2020-12-03 日亜化学工業株式会社 発光装置
WO2021213106A1 (fr) * 2020-04-21 2021-10-28 青岛海信激光显示股份有限公司 Laser et dispositif de projection

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