WO2023011270A1 - Polymer film layer, preparation method therefor, and led product - Google Patents

Polymer film layer, preparation method therefor, and led product Download PDF

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Publication number
WO2023011270A1
WO2023011270A1 PCT/CN2022/108070 CN2022108070W WO2023011270A1 WO 2023011270 A1 WO2023011270 A1 WO 2023011270A1 CN 2022108070 W CN2022108070 W CN 2022108070W WO 2023011270 A1 WO2023011270 A1 WO 2023011270A1
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Prior art keywords
led
film layer
polymer film
monomers
protective
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PCT/CN2022/108070
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French (fr)
Chinese (zh)
Inventor
宗坚
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江苏菲沃泰纳米科技股份有限公司
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Priority claimed from CN202110895813.1A external-priority patent/CN115889118A/en
Priority claimed from CN202110895864.4A external-priority patent/CN115706194A/en
Application filed by 江苏菲沃泰纳米科技股份有限公司 filed Critical 江苏菲沃泰纳米科技股份有限公司
Publication of WO2023011270A1 publication Critical patent/WO2023011270A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the invention relates to the technical field of LEDs, in particular to a polymer film layer and a preparation method thereof, an LED product, a protective LED packaging method, and a protective LED lamp bead.
  • LED (English: Light Emitting Diode, Chinese: Light Emitting Diode) is a solid-state semiconductor device that can convert electrical energy into visible light, so as to directly convert electricity into light. LEDs are mainly used in LED street lights, LED architectural landscape lighting, traffic signal LED lights, LED display screens, automotive lighting, indoor ordinary white LED lighting, artificial LED light sources for agricultural production, LED light sources for medical use, LED light sources for aviation lighting and other fields.
  • the core of LED is the wafer of a semiconductor, and wafer is attached on the support, and one end of this wafer is negative pole, and the other end connects the positive pole of power supply, and whole wafer is encapsulated by epoxy resin.
  • LED lamps Compared with incandescent lamps, LED lamps have obvious advantages such as energy saving, long service life, and environmental protection. However, LED lamps are easily invaded by external liquids/gases during use, such as water ingress due to humid air, rain, and heavy snow. It is easy to be damaged by short circuit corrosion, so the sealing of the chip is very important.
  • the traditional epoxy resin does not have a good heat dissipation effect, and it is easy to cause problems such as LED light decay and service life reduction. Therefore, polymer silicone is usually used as the encapsulant to prolong the service life of LED lights.
  • polymer silicone is usually used as the encapsulant to prolong the service life of LED lights.
  • brackets of existing LED lamps are usually made of a metal base, and a silver layer is plated on the base as a light source reflection layer of the LED lamp.
  • LED lights such as sulfur (S), water (H2O) or oxygen (O2) in air, humidity, rainy days, etc., will react with the silver plating layer.
  • S sulfur
  • H2O water
  • O2 oxygen
  • the reaction between S in the air and Ag will form Ag2S, which will lead to blackening of the silver plating layer and darkening of the lamp beads, which will cause serious light decay.
  • the prior art usually utilizes a liquid-phase coating method to coat a curable glue composition on the wafer, such as a silicone rubber composition, a metal-containing silica gel composition, etc., to achieve the required protection. Effect.
  • a curable glue composition such as a silicone rubber composition, a metal-containing silica gel composition, etc.
  • the coating often reaches several microns or hundreds of microns.
  • An advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, which can solve the industry pain points that LED lamps are prone to vulcanization, bromination, water ingress or oxygen permeability.
  • Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the present application, the polymer film layer is suitable for being prepared on the surface of the LED substrate on a large scale, and It has long-term anti-sulfur, waterproof, or oxygen-proof properties.
  • Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer itself can be firmly combined with the LED substrate to prevent cracking , aging, and even peeling problems.
  • Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer itself has better light transmission performance, so as to prevent the The polymer film affects the luminous flux of the LED lamp.
  • Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer is suitable for various types of LED substrates, and when formed When the polymer film layer is placed on the surface of the LED substrate, the structure of the LED substrate itself will not be damaged.
  • Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer can be formed on the surface of the LED substrate by plasma chemical vapor deposition .
  • Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the thickness of the polymer film layer can be at the nanometer level, so as to avoid affecting the light of the LED lamp transmittance.
  • Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein in order to achieve the above objects, no expensive materials or complex structures are used in the present invention. Therefore, the present application successfully and effectively provides a solution that not only provides a simple polymer film layer and its preparation method and LED products, but also increases the practicability of the polymer film layer and its preparation method and LED products and reliability.
  • the present invention provides a polymer film layer for forming on the surface of the LED substrate, wherein the polymer film layer is made of acrylate monomers, fluorine-containing olefins
  • the polymer film layer is made of acrylate monomers, fluorine-containing olefins
  • One or more of the monomer group consisting of monomers, organosilicon monomers, epoxy monomers, and aromatic ring-containing organic monomers is used as the reaction raw material, and the LED base is deposited by plasma-enhanced chemical vapor deposition.
  • the film layer formed on the surface of the material.
  • the acrylate monomer includes a long-chain alkyl acrylate compound and/or a fluorine-containing acrylate compound.
  • the number of carbon atoms in the alkyl group in the long-chain alkyl acrylate compound is greater than or equal to 6; wherein the fluorine-containing acrylate compound is selected from 2-(perfluorobutyl)ethyl Acrylate, 1H,1H,2H,2H-perfluorodecyl acrylate, 1H,1H,2H,2H-perfluorooctyl acrylate, (perfluorocyclohexyl)methacrylate, 1H,1H,2H, One or more of 2H-perfluorohexyl methacrylate, 1H,1H,2H,2H-perfluorooctyl methacrylate and 1H,1H,2H,2H-perfluorodecyl methacrylate .
  • the fluorine-containing acrylate compound is selected from 2-(perfluorobutyl)ethyl Acrylate, 1H,1H,2H
  • the long-chain alkyl acrylate compound is selected from n-hexyl methacrylate, n-octyl methacrylate, decyl methacrylate, isodecyl methacrylate, methacrylic acid Lauryl methacrylate, tetradecyl methacrylate, cetyl methacrylate, octadecyl methacrylate, n-hexyl acrylate, n-octyl acrylate, decyl acrylate, isodecyl acrylate, lauryl acrylate, decaacrylate One or more of tetraester, hexadecyl acrylate and stearyl acrylate.
  • the fluorine-containing olefin monomers include tetrafluoroethylene, hexafluoropropylene, octafluorobutene, perfluorononene, and/or 1H,1H,2H-perfluoro-1-deca Diene.
  • the organosilicon monomer is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, methyl Vinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoximinosilane, Tetramethyldivinyldisiloxane, Dimethylethylene Ethylethoxysilane, 1,2,2-trifluorovinyltriphenylsilane, tetramethoxysilane, trimethoxyhydrogensilane, n-octyltriethoxysilane, phenyltriethoxysilane, Vinyltris(2-methoxyethoxy)silane, triethylvinylsilane, hexaethylcyclotrisiloxane, 3-(methacryloxy)propyltrimethoxysilane,
  • the epoxy monomer includes 3-glycidoxypropyltriethoxysilane and/or ⁇ -glycidoxypropyltrimethoxysilane.
  • the reaction raw material is a mixture composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, and the reaction The mass fraction of the at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative in the raw material is 10%-60%.
  • the organosilicon monomer containing a double bond structure is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethyl Oxysilane, Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributylketoximosilane, Tetramethyldivinyldisiloxane , dimethylvinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane, and the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives are selected from iso Pentadiene, Ethylene Glycol Diacrylate, 1,3-Butadiene, 1,4-Pentadiene, Ethoxylated Trimethylolpropane Triacrylate, Tripropylene Glycol Diacrylate, Polyethylene Diol diacrylate, 1,6-hexanedi
  • the static water contact angle of the polymer film layer is greater than 100°.
  • the thickness of the polymer film layer is 10 nm-10 ⁇ m.
  • the present invention provides the preparation method of polymer membrane layer, comprises steps:
  • one or more of the monomer groups composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers are used as The reaction raw materials are used to form the polymer film layer on the surface of the LED substrate by plasma enhanced chemical vapor deposition.
  • the PECVD apparatus before feeding the reaction materials, the PECVD apparatus is vacuumed and a plasma source gas is fed, wherein the plasma source gas is an inert gas.
  • the plasma discharge is stopped and the vacuum is pumped, so as to take out the LED substrate on which the polymer film layer is formed.
  • the temperature of the reaction chamber of the PECVD device is controlled at 25-60°C.
  • the forming process of the polymer film layer includes a pretreatment stage and a film coating stage.
  • the discharge power of the plasma is 100-600W, and the discharge time is 60-1800s, and then When entering the coating stage, the discharge power of the plasma is adjusted to 10-200W, and the discharge duration is 600-36000s.
  • the formation process of the polymer film layer includes a pretreatment stage and a coating stage, the plasma discharge power of the pretreatment stage is 150-600W, and the discharge time is 60-1800s, and then enters the coating stage , the coating stage is a pulse discharge, the power is 10-300W, the time is 600s-36000s, the frequency of the pulse discharge is 20Hz-20KHz, and the duty ratio of the pulse is 1:1-1:500.
  • the present invention provides an LED product having a polymer film layer, wherein the LED product is obtained by being exposed to an acrylic monomer, a fluorine-containing olefin monomer, a silicone monomer
  • the monomer group consisting of epoxy monomers and aromatic ring-containing organic monomers are used as reaction raw materials, and are deposited on at least the surface of the LED substrate by plasma enhanced chemical vapor deposition.
  • a part is prepared by forming a polymer film layer.
  • the LED substrate is a finished LED or a semi-finished LED.
  • An advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, which can solve the industry pain points that LED lamp beads are prone to vulcanization, bromination, water ingress or oxygen permeability.
  • Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the protective LED packaging method can prepare a film on the surface of the LED substrate on a large scale Layer, and itself has long-term anti-sulfur, waterproof, or oxygen-proof properties.
  • Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the film layer itself prepared by the protective LED packaging method can be combined with the LED substrate Strong to prevent cracking, aging, or even peeling problems.
  • Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the film layer prepared by the protective LED packaging method itself has better light transmission performance, in case the polymer film affects the luminous flux of the LED lamp.
  • Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the protective LED packaging method can be deposited on the surface of the LED substrate Form a film layer to achieve better waterproof, sulfur-proof or oxygen-proof performance.
  • Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the protective LED packaging method is applicable to various types of LED substrates, and in During the process of forming the polymer film layer on the surface of the LED substrate, the structure of the LED substrate itself will not be damaged.
  • Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein in order to achieve the above purpose, no expensive materials or complicated structures are used in the present invention. Therefore, the present application successfully and effectively provides a solution, which not only provides a simple protective LED packaging method and protective LED lamp bead, but also increases the practicability of the protective LED packaging method and protective LED lamp bead and reliability.
  • the present invention provides a protective LED packaging method, including steps:
  • S130 Deposit and form a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to manufacture a protective LED semi-finished product.
  • the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers.
  • One or more of the monomer groups are used as reaction raw materials, and the film layer is formed on the surface of the LED semi-finished product by the plasma enhanced chemical vapor deposition method.
  • the reaction raw material is a mixture composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives, and the reaction raw material
  • the mass fraction of the two kinds of polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives is 10%-60%.
  • the protective LED packaging method further includes the steps of:
  • the step S130 includes the steps of:
  • S132 Deposition, one of the monomer groups composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers in the coating equipment or more as reaction raw materials, forming the polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition; and
  • S133 post-processing, stop the plasma discharge and vacuumize, so as to take out the LED semi-finished product formed with the polymer film layer.
  • the step S130 further includes the steps of:
  • the back surface of the LED semi-finished product is shielded.
  • the back surface of the protective LED semi-finished product is de-shielded.
  • the semi-finished product is then placed in the coating chamber of the coating equipment.
  • the step S110 includes the steps of:
  • the printed EMC bracket is carried out on the LED crystal bonding machine for solid crystal operation, so that the light-emitting element is fixed on the EMC bracket;
  • a reflow soldering operation is performed by a reflow soldering machine, so as to conductively connect the light emitting element and the EMC bracket.
  • the present application further provides a protective LED packaging method, comprising the steps of:
  • the protected LED semi-finished product is cut into individual pieces to obtain a protected LED finished product.
  • the present application further provides a protective LED packaging method, comprising the steps of:
  • the protected LED semi-finished product is cut into individual pieces to obtain a protected LED finished product.
  • the present invention provides a protective LED lamp bead, including:
  • LED brackets wherein the LED brackets have a silver-plated surface
  • the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
  • an encapsulating adhesive layer wherein the encapsulating adhesive layer encapsulates the light-emitting element
  • the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers
  • One or more of the monomer groups are used as reaction raw materials, and a film layer is formed on the outer surface of the encapsulation adhesive layer by plasma enhanced chemical vapor deposition.
  • the reaction raw material is a mixture composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, and the reaction The mass fraction of the polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives in the raw material is 10%-60%.
  • the organosilicon monomer containing a double bond structure is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethyl Oxysilane, Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributylketoximosilane, Tetramethyldivinyldisiloxane , dimethylvinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane, and the polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives are selected from iso Pentadiene, Ethylene Glycol Diacrylate, 1,3-Butadiene, 1,4-Pentadiene, Ethoxylated Trimethylolpropane Triacrylate, Tripropylene Glycol Diacrylate, Polyethylene Diol diacrylate, 1,6-hexanedio
  • the static water contact angle of the polymer film layer is greater than 100°.
  • the thickness of the polymer film layer is 10 nm-10 ⁇ m.
  • the LED bracket is an EMC bracket.
  • the application further provides a protective LED lamp bead, including:
  • LED brackets wherein the LED brackets have a silver-plated surface
  • the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
  • an encapsulating adhesive layer wherein the encapsulating adhesive layer encapsulates the light-emitting element
  • a polymer film layer wherein the polymer film layer is plated on the silver-plated surface of the LED bracket, and the polymer film layer is located on the silver-plated surface of the LED bracket and the light-emitting element and between the encapsulation layers.
  • the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers
  • One or more of the monomer groups are used as reaction raw materials, and a film layer is formed on the outer surface of the encapsulation adhesive layer by plasma enhanced chemical vapor deposition.
  • the application further provides a protective LED lamp bead, including:
  • LED brackets wherein the LED brackets have a silver-plated surface
  • the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
  • an encapsulating adhesive layer wherein the encapsulating adhesive layer encapsulates the light-emitting element
  • a polymer film layer wherein the polymer film layer is plated on the silver-plated surface of the LED bracket and the surface of the light-emitting element, and the polymer film layer is located between the encapsulation adhesive layer and the light-emitting component and the silvered surface of the LED holder.
  • the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers
  • One or more of the monomer groups are used as reaction raw materials, and a film layer is formed on the outer surface of the encapsulation adhesive layer by plasma enhanced chemical vapor deposition.
  • the present application further provides a protective LED packaging system, comprising:
  • a crystal-bonding device wherein the crystal-bonding device is used to conductively fix the light-emitting element to the LED bracket;
  • Dispensing equipment wherein the dispensing equipment is used for dispensing glue on the light-emitting element and the LED bracket to form an encapsulation layer to make LED semi-finished products;
  • Coating equipment wherein the coating equipment is used for depositing and forming a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to make a protective LED semi-finished product.
  • the coating equipment includes a coating chamber, a movable bracket movably arranged in the coating chamber, a storage tray detachably placed in the movable bracket, a supply and discharge Gas system and excitation system, wherein the storage tray is used to place a plurality of LED semi-finished products on a plate, and the movable bracket is used to drive the LED semi-finished products placed on the storage tray in the coating chamber movement, wherein the supply and exhaust system is connected to the coating chamber in a conductive manner, and is used to supply gas inward to the coating chamber while exhausting outward to form a vacuum in the coating chamber
  • the chamber provides reaction raw materials, wherein the excitation system is correspondingly arranged in the coating chamber for generating an excitation electromagnetic field in the coating chamber to ionize the reaction raw materials to form plasma, so that the plasma is in the coating chamber
  • the surface of the LED semi-finished product is deposited to form the polymer film layer.
  • the movable support includes a revolving support and a plurality of self-rotating supports, wherein the revolving support is rotatably arranged in the coating chamber, and the plurality of self-rotating supports are respectively movably It is rotatably arranged in the coating chamber to form a planetary turret, wherein the plurality of self-rotating supports are used to place the storage tray.
  • the storage tray has a plurality of storage slots, wherein the plurality of storage slots extend along the radial direction of the storage tray, and are used for inserting the LED semi-finished product.
  • the storage tray includes a grid plate and a grid plate, wherein the grid plate and the grid plate are stacked at intervals, so that the grid plate and the mesh A plurality of storage slots are formed between the grid plates.
  • the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers.
  • One or more of the monomer groups are used as reaction raw materials, and the film layer is formed on the surface of the LED semi-finished product by the plasma enhanced chemical vapor deposition method.
  • the protective LED packaging system further includes a cutting device, wherein the cutting device is used to cut the semi-finished protective LED into individual pieces to obtain finished protective LED products.
  • FIG. 1 is a schematic flowchart of a protective LED packaging method according to an embodiment of the present application.
  • Fig. 2 shows a schematic flow chart of one of the steps in the protective LED packaging method according to the above-mentioned embodiment of the present application.
  • Fig. 3 shows a schematic flowchart of step 2 in the protective LED packaging method according to the above-mentioned embodiment of the present application.
  • Fig. 4 shows a schematic structural view of a finished protective LED packaged by the protective LED packaging method according to the above-mentioned embodiments of the present application.
  • Fig. 5 shows a first modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application.
  • Fig. 6 shows a schematic structural view of a finished protective LED packaged by the protective LED packaging method according to the above-mentioned first modified embodiment of the present application.
  • Fig. 7 shows a second modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application.
  • Fig. 8 shows a schematic structural view of a finished protective LED packaged by the protective LED packaging method according to the above-mentioned second modified embodiment of the present application.
  • FIG. 9 is a schematic block diagram of a protective LED packaging system according to an embodiment of the present application.
  • Fig. 10 shows a schematic structural view of the coating equipment in the protective LED packaging system according to the above-mentioned embodiments of the present application.
  • Fig. 11 shows a schematic structural view of the storage tray in the coating device according to the above-mentioned embodiment of the present application.
  • Fig. 12 is a schematic diagram showing the comparison of the test results of the coated LED substrate according to the present application, the untreated LED substrate and the LED substrate sprayed on the surface.
  • Fig. 13A is a schematic table showing the light attenuation data of LED lamp beads before and after the coating of 200nm.
  • FIG. 13B is a schematic table showing the light attenuation data of the LED lamp bead before and after coating of 800nm.
  • FIG. 14A shows a schematic table of vulcanization decay data of uncoated hard rubber blanking type LED lamp beads.
  • FIG. 14B is a schematic table showing the vulcanization attenuation data of the hard rubber blanking type LED lamp bead after coating with 200nm.
  • FIG. 14C is a schematic table showing the vulcanization attenuation data of hard rubber blanking LED lamp beads before and after coating with a film thickness of 800 nm.
  • Fig. 15A shows a table schematic diagram of vulcanization decay data of uncoated hard rubber cut LED lamp beads.
  • FIG. 15B is a schematic table showing the vulcanization attenuation data of hard rubber cut LED lamp beads after coating with 200nm.
  • FIG. 15C is a schematic table showing the vulcanization attenuation data of the hard rubber cut LED lamp bead before and after coating with a film thickness of 800 nm.
  • Fig. 16 shows a table schematic diagram of the vulcanization attenuation data of the soft rubber-cut LED lamp bead after coating 200nm.
  • the term “a” should be understood as “at least one” or “one or more”, that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element
  • the quantity can be multiple, and the term “a” cannot be understood as a limitation on the quantity.
  • the term "a” in the claims and the specification should be understood as “one or more”, that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element Can be multiple. Unless it is clearly indicated in the disclosure of the present invention that there is only one element, the term “a” cannot be understood as unique or single, and the term “a” cannot be understood as a limitation on the number.
  • the invention provides a polymer film layer and its preparation method and LED products, wherein the polymer film layer has good sealing performance, so that when the polymer film layer is attached to the surface of an LED substrate, it can Therefore, the surface of the LED base material has better waterproof, sulfur-proof and oxygen-proof properties.
  • the polymer film layer itself has good light transmission performance, which enables the polymer film layer to be applied to products without too much impact on the light transmission performance of the product.
  • the type of the LED substrate can be, but is not limited to, materials such as glass, metal, ceramic, plastic, semiconductor or polymer.
  • the LED base material can be, but not limited to, LED finished products such as LED display screens or LED lamps, and can also be implemented as LED semi-finished products such as LED brackets or light-emitting elements.
  • the polymer film layer can be prepared to have a small thickness, and its thickness range is for example but not limited to 10nm-20um.
  • the thickness of the polymer film layer is implemented to be 10nm ⁇ 10um.
  • the polymer film layer is formed on the surface of the LED substrate through a plasma enhanced chemical vapor deposition (PECVD) process. That is to say, during the preparation process, the surface of the LED substrate is exposed to the chamber of the plasma-enhanced chemical vapor deposition reaction device, a plasma is formed in the chamber, and the reaction raw material deposition reaction forms the The polymer film layer is on the surface of the LED substrate.
  • PECVD plasma enhanced chemical vapor deposition
  • the plasma enhanced chemical vapor deposition (PECVD) process has many advantages: (1) dry film formation does not require the use of organic solvents; (2) the etching effect of plasma on the surface of the LED substrate , so that the deposited film has good adhesion to the LED substrate; (3) the coating can be uniformly deposited on the surface of the irregular LED substrate, and the gas phase permeability is extremely strong; (4) the film layer can be designed well, compared with The micron-level control accuracy of the liquid phase method, the chemical vapor phase method can control the coating thickness at the nanoscale scale; (5) The film structure design is easy, the chemical vapor phase method uses plasma activation, and does not need to be designed for composite coatings of different materials Specific initiators are used to initiate, and various raw materials can be combined through the regulation of input energy; (6) The compactness is good, and the chemical vapor deposition method often activates multiple active sites during the plasma initiation process.
  • the plasma-enhanced chemical vapor deposition (PECVD) process can generate plasma through glow discharge, and the methods of discharge include radio frequency discharge, microwave discharge, intermediate frequency discharge, high frequency discharge, and electric spark discharge.
  • the high frequency discharge and The waveform of intermediate frequency discharge is sinusoidal or bipolar pulse.
  • the discharge type in the plasma enhanced chemical vapor deposition (PECVD) process may be continuous discharge or pulse discharge.
  • the polymer film layer may be composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers, and aromatic ring-containing organic monomers
  • One or more of the monomer groups are used as reaction raw materials and formed on the surface of the LED substrate by plasma-enhanced chemical vapor deposition.
  • the acrylate monomer has a double bond that is easily activated by plasma, so that the deposition speed is accelerated.
  • the acrylate monomer may include, but is not limited to, long-chain alkyl acrylate compounds and/or fluorine-containing acrylate compounds.
  • the number of carbon atoms of the alkyl group in the long-chain alkyl acrylate compounds is generally greater than or equal to 6, such as n-hexyl methacrylate, n-octyl methacrylate, decyl methacrylate, isodecyl methacrylate ester, lauryl methacrylate, tetradecyl methacrylate, cetyl methacrylate, octadecyl methacrylate, n-hexyl acrylate, n-octyl acrylate, decyl acrylate, isodecyl acrylate, decaacrylate Diester, tetradecyl acrylate, cetyl acrylate or octadecyl acrylate, etc.
  • the fluorine-containing acrylate compounds can be implemented as, but not limited to, 2-(perfluorobutyl)ethyl acrylate, 1H,1H,2H,2H-perfluorodecyl acrylate, 1H,1H,2H,2H - Perfluorooctyl Acrylate, (Perfluorocyclohexyl) Methacrylate, 1H,1H,2H,2H-Perfluorohexyl Methacrylate, 1H,1H,2H,2H-Perfluorooctyl Methacrylate ester or 1H,1H,2H,2H-perfluorodecyl methacrylate, etc.
  • the fluorine-containing olefin monomer may include, but is not limited to, tetrafluoroethylene, hexafluoropropylene, octafluorobutene, perfluorononene, or 1H,1H,2H-perfluoro-1-dodecene and the like.
  • the organosilicon-based monomers may include, but are not limited to, vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, methylvinyldiethyl Oxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoximinosilane, Tetramethyldivinyldisiloxane, Dimethylvinylethoxysilane , 1,2,2-trifluorovinyltriphenylsilane, tetramethoxysilane, trimethoxyhydrogensilane, n-octyltriethoxysilane, phenyltriethoxysilane, vinyl tri(2 -methoxyethoxy)silane, triethylvinylsilane, hexaethylcyclotrisiloxane, 3-(methacryloxy)propyltrimethoxy
  • the epoxy monomer may include, but is not limited to, 3-glycidyloxypropyltriethoxysilane or ⁇ -glycidyloxypropyltrimethoxysilane and the like.
  • one layer of the polymer film layer or multiple layers of the polymer film layer may be deposited on the surface of the LED substrate.
  • the static water contact angle of the polymer film layer can reach more than 100°.
  • reaction raw materials for preparing the polymer film layer are introduced into the reaction chamber of the preparation equipment in the form of monomer vapor.
  • the reaction raw material for preparing the polymer film layer can be implemented, but not limited to, by at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon mixture of derivatives.
  • the mass fraction of the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives in the reaction raw materials is 10%-60%.
  • the organosilicon monomer containing a double bond structure can be selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane , Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoneximosilane, Tetramethyldivinyldisiloxane, Dimethicone One or more of vinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane.
  • the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives can be selected from isoprene, ethylene glycol diacrylate, 1,3-butadiene, 1,4-pentadiene, ethoxylated trihydroxy Methylpropane Triacrylate, Tripropylene Glycol Diacrylate, Polyethylene Glycol Diacrylate, 1,6-Hexanediol Diacrylate, Diethylene Glycol Divinyl Ether, Neopentyl Glycol Diacrylate , 1,4-butylene glycol methacrylate, 1,6-hexanediol dimethacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, trimethacrylate Ethylene glycol ester, tetraethylene glycol dimethacrylate, 1,3-butylene glycol dimethacrylate, neopentyl glycol dimethacrylate, methacrylic anhydride, diprop-2-enyl One or more of 2-
  • an embodiment of the present application provides a method for preparing the polymer film layer, which may include steps:
  • the plasma source gas may be an inert gas, nitrogen or oxygen, or the like.
  • the plasma source gas may be a single gas or a mixed gas of the above single gas, such as a mixed gas of He and Ar in an inert gas.
  • the polymer film layer can be prepared in large quantities, and the preparation steps are simple.
  • the method, the prepared polymer film layer has long-term waterproof, sulfur-proof and oxygen-proof properties, suitable for industrial applications.
  • the reaction chamber is continuously evacuated, so that the vacuum degree in the reaction chamber is evacuated to 10-5000 mTorr.
  • an inert gas such as He, Ar or a mixed gas thereof, is started to be introduced, and the movement mechanism is turned on, so that the LED substrate is Motion is generated within the reaction chamber.
  • the reaction chamber of the PECVD device is implemented as a rotating body-shaped chamber or a cube-shaped chamber with a volume of 50-1000 L, and the temperature of the reaction chamber is controlled at 25-60°C.
  • the inert gas The flow rate is 5-300 sccm.
  • the volume of the reaction chamber is 100 L
  • the temperature of the reaction chamber is controlled at 30° C.
  • the flow rate of the inert gas is 15 sccm.
  • the movement form of the LED base material in the reaction chamber can be that the LED base material performs linear reciprocating motion or curvilinear motion relative to the reaction chamber, wherein the The curved motion may include circular motion, elliptical circular motion, planetary motion, spherical motion or other irregularly routed curved motion.
  • the rotational speed of the LED base material can be implemented as, but not limited to, 1 ⁇ 10 revolutions/min.
  • the LED base material can be implemented, but not limited to, as finished LED products such as LED display screens or LED lamps.
  • the LED base material can also be implemented as an LED bracket or an LED semi-finished product before packaging, and the like.
  • step (2) of the preparation method of the polymer film layer feed monomer vapor into the reaction chamber until the vacuum degree is 30-300 mTorr, open Plasma discharge and chemical vapor deposition are performed to form the polymer film on the surface of the substrate.
  • the vacuum degree in the reaction chamber reaches 50-200 mTorr, the plasma discharge is turned on to perform chemical vapor deposition.
  • composition of the monomer vapor may include one of acrylate monomers, fluorine-containing olefin monomers, organosilicon monomers, epoxy monomers, and aromatic ring-containing organic monomers or multiple monomers.
  • the composition of the monomer vapor is implemented as a mixture of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, wherein the monomer
  • the mass fraction of the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives in the steam is 10%-60%.
  • the plasma discharge process during the deposition process is a low-power continuous discharge, which specifically includes the following deposition process at least once: wherein the deposition process Including the pretreatment stage and the coating stage, firstly, the plasma discharge power in the pretreatment stage is 100-600W, and the continuous discharge time is 60-1800s. Then, when entering the coating stage, adjust the plasma discharge power to 10-200W, and last The discharge time is 600 ⁇ 36000s.
  • the plasma discharge power is 150W, and the discharge time is 600s; and in the coating stage, the plasma discharge power is adjusted to 60W, and the discharge time is 800s.
  • the plasma discharge process in the deposition process is a pulse discharge, specifically including the following deposition Process at least once:
  • the formation process of the polymer film layer includes a pretreatment stage and a coating stage.
  • the plasma discharge power in the pretreatment stage is 150-600W, and the continuous discharge time is 60-1800s, and then enters the coating stage.
  • the coating stage is pulse discharge.
  • the power is 10 ⁇ 300W, the time is 600s ⁇ 36000s, the frequency of pulse discharge is 20Hz-20KHz, and the duty ratio of pulse is 1:1 ⁇ 1:500.
  • the monomer is atomized and volatilized by the feed pump to form the monomer vapor, and introduced into the reaction chamber at a low pressure of 100-300 mTorr, wherein the The flow rate of the monomer steam can be 10-1000 ⁇ L/min.
  • the flow rate of the monomer vapor can be 500 uL/min.
  • the plasma discharge method is implemented as radio frequency discharge.
  • the total thickness of the polymer film layer is 10 nm-10 ⁇ m.
  • the step (3) of the preparation method of the polymer film layer while stopping the introduction of the monomer vapor, stop the plasma discharge, and continue vacuuming to maintain
  • the vacuum degree of the reaction chamber is 10-200 mTorr; then after 1-5 minutes, the atmosphere is vented to an atmospheric pressure, the movement of the LED base material is stopped, and then the LED base material is taken out.
  • the plasma discharge is stopped, and the reaction chamber is filled with air or an inert gas to a pressure of 2000-5000 millitorr, and then vacuumed to 10-200 millitorr to carry out the above-mentioned inflation and pumping.
  • the vacuum step is at least once, the air is introduced to an atmospheric pressure, the movement of the LED base material is stopped, and then the LED base material is taken out.
  • the polymer film layer can be formed on the surface of the LED substrate (such as LED lamp beads or LED display screens, etc.) to form an LED product with a polymer film layer, which helps to improve the performance of the LED. Waterproof, sulfur-proof and oxygen-proof performance of the product.
  • the LED product with a polymer film layer can expose the LED substrate to an environment in which the monomer vapor is used as a reaction raw material, so that at least A part of the polymer film layer is formed, wherein the monomer vapor can be composed of acrylate monomers, fluorine-containing olefin monomers, organosilicon monomers, epoxy monomers, and organic compounds containing aromatic rings One or more of the group of monomers composed of monomers.
  • the LED base material is a finished LED product or a semi-finished LED product.
  • the existing LED lights usually use polymer silicone as the encapsulant to prolong the service life
  • the silica gel itself and the poor sealing between the silica gel and the bracket still have disadvantages such as moisture permeability, oxygen permeability, sulfur permeability, and bromine permeability.
  • the brackets of most LED lamps are usually made of a metal base, and a silver layer is plated on the base as the light source reflection layer of the LED lamp.
  • LED lights such as sulfur (S), water (H2O) or oxygen (O2) in air, humidity, rainy days, etc., will react with the silver plating layer.
  • this application provides a protective LED packaging method and protective LED lamp beads, which can prepare LED lamps with properties such as sulfur resistance, water resistance, or oxygen resistance, so as to solve the problem that LED lamps are prone to vulcanization, further damage Industry pain points such as water or oxygen permeability.
  • the protective LED packaging method may include steps:
  • S130 Deposit and form a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to manufacture a protective LED semi-finished product.
  • the polymer film layer has good sealing performance, when the polymer film layer is attached to the surface of the LED semi-finished product, the surface of the LED semi-finished product can have better waterproof , Anti-sulfur, anti-oxidation properties.
  • the polymer film layer itself has better light transmission performance, which makes the polymer film layer provide protective functions such as waterproof, sulfur-proof, oxygen-proof, etc., without affecting the performance of the LED. Surface light transmission properties of semi-finished products.
  • the plasma-enhanced chemical vapor deposition (PECVD) process has many advantages compared with other existing deposition processes: (1) dry film formation does not require the use of organic solvents; The etching effect makes the deposited film and the substrate have good adhesion; (3) the coating can be uniformly deposited on the surface of the irregular substrate, and the gas phase permeability is extremely strong; (4) the film layer can be designed well, and the phase Compared with the micron-level control accuracy of the liquid-phase method, the chemical vapor-phase method can control the coating thickness at the nano-scale; (5) The film structure is easy to design, and the chemical vapor-phase method uses plasma activation, which is not suitable for composite coatings of different materials.
  • the plasma-enhanced chemical vapor deposition (PECVD) process can generate plasma through glow discharge, and the methods of discharge include radio frequency discharge, microwave discharge, intermediate frequency discharge, high frequency discharge, and electric spark discharge.
  • the high frequency discharge and The waveform of intermediate frequency discharge is sinusoidal or bipolar pulse.
  • the discharge type in the plasma enhanced chemical vapor deposition (PECVD) process may be continuous discharge or pulse discharge.
  • the polymer film layer is made of acrylate monomer, fluorine-containing olefin monomer, silicone
  • One or more of the monomer group composed of monomers, epoxy monomers and aromatic ring-containing organic monomers are used as reaction raw materials, and are deposited on the surface of the LED semi-finished product by the plasma-enhanced chemical vapor deposition method. formed film layer.
  • the polymer film layer can be prepared to have a small thickness, and its thickness range is for example but not limited to 10nm-20um. More preferably, the thickness of the polymer film layer is implemented to be 10nm-10um. It should be noted that one layer of the polymer film layer or multiple layers of the polymer film layer may be deposited on the surface of the LED semi-finished product. Especially, when only one layer of the polymer film layer is deposited on the surface of the LED semi-finished product, the hydrophobic angle of the polymer film layer can reach more than 100°.
  • the acrylate monomer may include, but is not limited to, acrylate and its derivatives, long-chain alkyl acrylate compounds, or fluorine-containing acrylate compounds.
  • the number of carbon atoms of the alkyl group in the long-chain alkyl acrylate compounds is generally greater than or equal to 6, such as n-hexyl methacrylate, n-octyl methacrylate, decyl methacrylate, isodecyl methacrylate ester, lauryl methacrylate, tetradecyl methacrylate, cetyl methacrylate, octadecyl methacrylate, n-hexyl acrylate, n-octyl acrylate, decyl acrylate, isodecyl acrylate, decaacrylate Diesters, myristyl acrylate, cetyl acrylate and/or octadecyl acrylate, etc.
  • the fluorine-containing acrylate compounds can be implemented as, but not limited to, 2-(perfluorobutyl)ethyl acrylate, 1H,1H,2H,2H-perfluorodecyl acrylate, 1H,1H,2H,2H - Perfluorooctyl Acrylate, (Perfluorocyclohexyl) Methacrylate, 1H,1H,2H,2H-Perfluorohexyl Methacrylate, 1H,1H,2H,2H-Perfluorooctyl Methacrylate esters and/or 1H,1H,2H,2H-perfluorodecyl methacrylate.
  • the fluorine-containing olefin monomer may include, but is not limited to, tetrafluoroethylene, hexafluoropropylene, octafluorobutene, perfluorononene and/or 1H,1H,2H-perfluoro-1-dodecene.
  • the organosilicon-based monomers may include, but are not limited to, vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, methylvinyldiethyl Oxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoximinosilane, Tetramethyldivinyldisiloxane, Dimethylvinylethoxysilane , 1,2,2-trifluorovinyltriphenylsilane, tetramethoxysilane, trimethoxyhydrogensilane, n-octyltriethoxysilane, phenyltriethoxysilane, vinyl tri(2 -methoxyethoxy)silane, triethylvinylsilane, hexaethylcyclotrisiloxane, 3-(methacryloxy)propyltrimethoxy
  • the epoxy monomer may include, but is not limited to, 3-glycidoxypropyltriethoxysilane and/or ⁇ -glycidoxypropyltrimethoxysilane.
  • the LED bracket can be implemented as an EMC bracket, but not limited to, wherein the EMC (Epoxy Molding Compound in English) bracket is a new epoxy resin material and etching technology under the package of the molding device.
  • EMC epoxy Molding Compound in English
  • the LED bracket can also be implemented as other types of brackets, which will not be described in detail in this application.
  • the EMC bracket is a whole piece of bracket, so when a single LED lamp bead needs to be obtained, the EMC bracket needs to be cut.
  • the protective LED packaging method may further include the steps of:
  • S140 Cut the semi-finished protective LED into single pieces to obtain finished protective LED.
  • the protective LED finished product 50 includes an LED bracket 51, a light emitting element 52, an encapsulation adhesive layer 53 and a polymer film layer 54, wherein the light emitting element 52 is conductively fixed to the LED bracket 51 of the silver-plated surface 510 , and the encapsulation adhesive layer 53 encapsulates the light-emitting element 52 , wherein the polymer film layer 54 is plated on the outer surface of the encapsulation adhesive layer 53 .
  • the step S130 of the protective LED packaging method may include the steps of:
  • S131 Pre-processing: After placing the LED semi-finished product in the coating chamber of the coating equipment for vacuuming, inject plasma source gas, and turn on the movement mechanism to make the LED semi-finished product move in the coating chamber;
  • S132 Deposition: In the coating equipment, in the monomer group consisting of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers, and aromatic ring-containing organic monomers One or more of them are reaction raw materials, and the polymer film layer is formed on the surface of the LED semi-finished product by plasma-enhanced chemical vapor deposition; and
  • S133 post-processing: stop the plasma discharge, stop vacuuming and then ventilate the atmosphere to an atmospheric pressure, stop the movement of the LED semi-finished product, and then take out the LED semi-finished product formed with the polymer film layer.
  • the plasma source gas may be an inert gas, nitrogen or oxygen, or the like.
  • the plasma source gas may be a single gas or a mixed gas of the above single gas, such as a mixed gas of He and Ar in an inert gas.
  • step S131 continuously evacuate the coating chamber, so as to evacuate the vacuum degree in the coating chamber to 10-5000 mTorr.
  • an inert gas such as He and/or Ar
  • the movement mechanism is turned on, so that the LED semi-finished product is in the coating chamber Motion is generated indoors.
  • the coating chamber of the coating equipment is implemented as a rotating body-shaped chamber or a cube-shaped chamber with a volume of 50-1000L, the temperature of the coating chamber is controlled at 25-60°C, and the inert gas The flow rate is 5-300 sccm.
  • the volume of the coating chamber is 100 L, the temperature of the coating chamber is controlled at 30° C., and the flow rate of the inert gas is 15 sccm.
  • the movement form of the LED semi-finished product in the coating chamber may be that the LED semi-finished product performs a linear reciprocating motion or a curved motion relative to the coating chamber, wherein the curved motion may include Circular motion, elliptical circular motion, planetary motion, spherical motion or curve motion of other irregular routes.
  • the rotational speed of the LED semi-finished product may be, but not limited to, implemented as 1-10 revolutions/min.
  • step S132 feed the monomer vapor into the coating chamber until the vacuum degree is 30-300 mTorr, turn on the plasma discharge, and perform chemical vapor deposition in the coating chamber.
  • the polymer film layer is formed on the surface of the LED semi-finished product. For example, when the vacuum in the coating chamber reaches 50-200 mTorr, the plasma discharge is turned on to perform chemical vapor deposition.
  • the composition of the monomer vapor is implemented as a mixture of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, wherein the monomer
  • the mass fraction of the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives in the steam is 10%-60%.
  • the plasma discharge process during the deposition process is a low-power continuous discharge, which specifically includes the following deposition process at least once: wherein the deposition process includes pre- In the treatment stage and the coating stage, firstly, the plasma discharge power in the pretreatment stage is 100-600W, and the continuous discharge time is 60-1800s. Then, when entering the coating stage, adjust the plasma discharge power to 10-200W, and the continuous discharge time 600 ⁇ 36000s.
  • the plasma discharge power is 150W, and the discharge time is 600s; and in the coating stage, the plasma discharge power is adjusted to 60W, and the discharge time is 800s.
  • the plasma discharge process during the deposition process is a pulse discharge, specifically including the following deposition process at least One time:
  • the formation process of the polymer film layer includes a pretreatment stage and a coating stage.
  • the plasma discharge power in the pretreatment stage is 150-600W, and the continuous discharge time is 60-1800s, and then enters the coating stage.
  • the coating stage is a pulse discharge with a power of 10 ⁇ 300W, time 600s ⁇ 36000s, pulse discharge frequency 20Hz-20KHz, pulse duty ratio 1:1 ⁇ 1:500.
  • the monomer is atomized and volatilized by the feed pump to form the monomer vapor, and introduced into the coating chamber by a low pressure of 100-300 mTorr, wherein the monomer
  • the flow rate of the steam can be 10-1000 ⁇ L/min.
  • the flow rate of the monomer vapor can be 500 uL/min.
  • the plasma discharge method is implemented as radio frequency discharge.
  • step S133 stop the plasma discharge while stopping the introduction of the monomer vapor, and continue vacuuming to keep the vacuum degree of the coating chamber at 10-200 millitorr; then after 1 to 5 minutes, the atmosphere is vented to an atmospheric pressure, the movement of the LED semi-finished product is stopped, and then the LED semi-finished product is taken out.
  • the plasma discharge is stopped, and the coating chamber is filled with air or an inert gas to a pressure of 2000-5000 millitorr, and then vacuumed to 10-200 millitorr to carry out the above-mentioned inflation and pumping.
  • the vacuum step is at least once, the air is introduced to an atmospheric pressure, the movement of the LED semi-finished product is stopped, and then the LED semi-finished product is taken out.
  • the back side of the LED bracket needs to be exposed to be electrically connected to the power supply and to ensure better heat dissipation Therefore, before coating the LED semi-finished product, it is necessary to shield the back surface of the LED semi-finished product so that the polymer film layer is only formed on the front surface of the LED semi-finished product.
  • the front surface of the LED semi-finished product refers to the surface corresponding to the front surface of the LED bracket as the light-emitting surface of the LED semi-finished product
  • the back surface of the LED semi-finished product refers to the surface corresponding to the LED bracket.
  • the surface of the back of the LED bracket is used as the backlight surface of the LED semi-finished product.
  • step S130 of the protective LED packaging method may further include the steps of:
  • step S131 performing shielding treatment on the back surface of the LED semi-finished product.
  • step S133 de-shielding treatment is performed on the back surface of the protective LED semi-finished product.
  • the present application may perform shielding treatment on the back surface of the LED semi-finished product by bonding a shielding film to the back surface of the LED semi-finished product.
  • the present application may also use other types of shielding fixtures to perform shielding treatment on the back surface of the LED semi-finished product.
  • the step S130 of the protective LED packaging method may further include the steps of:
  • the placed LED semi-finished products are dried in a drying cabinet, so that after the dried LED semi-finished products are obtained, they are placed in the coating chamber of the coating equipment for subsequent coating operations.
  • the drying cabinet can use gas, such as air, with a relative humidity of less than 3%, a temperature of 20-30° C., and a flow rate of 15-18 m3/h.
  • gas such as air
  • the step S110 of the protective LED packaging method may include the steps of:
  • S111 Use a flat solder paste printing machine and a 3D printing stencil to print solder paste in the cup of the EMC bracket;
  • S112 Carry out die-bonding operation on the printed EMC bracket on an LED die-bonding machine, so as to fix the light-emitting element on the EMC bracket;
  • S113 Perform reflow soldering operation by using a reflow soldering machine to conductively connect the light emitting element and the EMC bracket.
  • the polymer film layer is formed after solid crystal, wire bonding and glue dispensing, in order to improve the LED products (such as LED lamp beads or LED display screens, etc.) ) waterproof, anti-sulfur and anti-oxidation properties.
  • the polymer film layer may also be formed before die bonding, or may also be formed before glue dispensing and after wire bonding.
  • Fig. 5 shows a first modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application. Specifically, compared with the above-mentioned embodiment according to the present application, the difference of the first variant implementation according to the present application is that: the protective LED packaging method may include the steps of:
  • S220 Conductively fixing the light-emitting element to the LED bracket coated with the polymer film layer
  • the protective LED finished product 50 includes an LED bracket 51, a light emitting element 52, a packaging adhesive layer 53 and a polymer film layer 54, wherein the light emitting element 52 is conductively fixed to the LED bracket 51 of the silver-plated surface 510, and the encapsulation adhesive layer 53 encapsulates the light-emitting element 52, wherein the polymer film layer 54 is plated on the silver-plated surface 510 of the LED bracket 51, and the The polymer film layer 54 is located between the silver-plated surface 510 of the LED bracket 51 and the light-emitting element 52 and the encapsulation adhesive layer 53, so that the LED bracket 51 is sealed by the polymer film layer 54.
  • the silver-plated surface 510 is separated from the light-emitting element 52 and the packaging adhesive layer 53 .
  • FIG. 7 shows a second modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application. Specifically, compared with the above-mentioned embodiment according to the present application, the difference of the second variant implementation according to the present application is that: the protective LED packaging method may include the steps of:
  • S320 Deposit and form a polymer film layer on the silver-plated surface of the LED bracket and the surface of the light-emitting element by plasma-enhanced chemical vapor deposition;
  • the protective LED finished product 50 includes an LED bracket 51, a light emitting element 52, an encapsulation layer 53 and a polymer film layer 54, wherein the light emitting element 52 is conductively fixed to the LED bracket 51 of the silver-plated surface 510, and the encapsulation adhesive layer 53 encapsulates the light-emitting element 52, wherein the polymer film layer 54 is plated on the silver-plated surface 510 of the LED bracket 51 and the The surface of the light-emitting element 52, and the polymer film layer 54 is located between the encapsulation adhesive layer 53 and the silver-plated surface 510 of the light-emitting element 52 and the LED bracket 52, so as to pass through the polymer film
  • the layer 54 separates the packaging adhesive layer 53 from the light emitting element 52 and the silver-plated surface 510 of the LED bracket 52 .
  • the present application further provides a protective LED packaging system 1, wherein the protective LED packaging system 1 may include a die-bonding device 10, wherein the die-bonding device 10 is used to light-emitting
  • the component can be conductively fixed to the LED bracket; the dispensing equipment 20, wherein the dispensing equipment 20 is used for dispensing glue on the light-emitting element and the LED bracket to form an encapsulation layer to make an LED semi-finished product; and a coating equipment 30 , wherein the coating device 30 is used for depositing and forming a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to make a protective LED semi-finished product.
  • the coating device 30 may include a coating chamber 31 , a movable The movable bracket 32 , the storage tray 33 detachably placed on the movable bracket 32 , the air supply and exhaust system 34 and the excitation system 35 .
  • the storage tray 33 is used to place a plurality of LED semi-finished products on a plate, and the movable bracket 32 is used to drive the LED semi-finished products placed on the storage tray 33 in the coating chamber 31 sports.
  • the air supply and exhaust system 34 is conductively connected with the coating chamber 31, and is used to supply gas inward to the coating chamber 31 while exhausting the gas outward to form a vacuum in the coating chamber 31.
  • the coating chamber 31 provides the reaction raw materials.
  • the excitation system 35 is correspondingly arranged in the coating chamber 31, and is used to generate an excitation electromagnetic field in the coating chamber 31 to ionize the reaction material to form a plasma, so that the plasma is formed in the LED semi-finished product. surface deposition to form the polymer film layer.
  • the movable support 32 may include a revolving support 321 and a plurality of self-rotating supports 322, wherein the revolving support 321 is rotatably arranged in the coating chamber 31, and the plurality of self-rotating supports 322 are respectively It is rotatably arranged on the revolving support 321 to form a planetary turret, wherein the plurality of self-rotating supports 322 are used to place the storage tray 33, so that the LED semi-finished product placed on the storage tray 33 is placed on the storage tray 33.
  • the rotation bracket 322 while rotating around the rotation axis of the rotation bracket 322, it is also driven by the revolution bracket 321 to rotate around the revolution axis of the revolution bracket 321.
  • the LED semi-finished products placed on the storage tray 33 both rotate and revolve in the coating chamber 31, so that all the LED semi-finished products regardless of their initial position in the coating chamber 31 Whether the position is in the edge part or the central part, it can be rotated to the edge part of the coating chamber 31, so as to provide more consistent coating conditions for all the LED semi-finished products, thereby ensuring that all the LED semi-finished products obtain uniformity Consistent film layer in order to meet the requirements of industrial mass production.
  • the storage tray 33 has a plurality of storage slots 330, wherein the plurality of storage slots 330 extend along the radial direction of the storage tray, so as to insert the LED semi-finished products in
  • the storage slot 330 of the storage tray 33 is used to place more LED semi-finished products in a limited space, and at the same time prevent a plurality of LED semi-finished products from blocking each other and affect the coating effect.
  • the storage tray 33 includes a grid plate 331 and a grid plate 332, wherein the grid plate 331 and the grid plate 332 are stacked at intervals, so that The plurality of storage slots 330 are formed between the grid plate 331 and the grid plate 332 , so as to ensure the insertion of the LED semi-finished products while minimizing the shielding of the LED semi-finished products by the storage tray 33 .
  • the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone-based monomers, epoxy-based monomers and aromatic ring-containing organic monomers
  • One or more of the monomer groups are used as reaction raw materials, and the film layer is formed on the surface of the LED semi-finished product by the plasma enhanced chemical vapor deposition method.
  • the protective LED packaging system may further include a cutting device 40, wherein the cutting device 40 is used to cut the protective LED semi-finished products into individual pieces to obtain Protected LED finished product.
  • the protective LED packaging method of the application can prepare the above-mentioned Protected LED finished product.
  • the protective LED packaging system according to the above embodiments of the present application is described as an example of implementing the protective LED packaging method according to the above embodiments of the present application, it can also be used to implement the The protective LED packaging method of the above-mentioned first or second variant implementation of the present application will not be described in detail here.
  • the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 200 nm.
  • the polymer film layer can be prepared according to the following steps:
  • the substrate is placed in the reaction chamber of the PECVD device, the reaction chamber is closed and the reaction chamber is continuously evacuated, and the vacuum degree in the reaction chamber is evacuated to 20 millitorr, The inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
  • the reaction chamber is a rotating body chamber, and the volume of the reaction chamber is 100L, the temperature of the reaction chamber is controlled at 30° C., and the flow rate of the inert gas is: 15 sccm.
  • the substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
  • the monomer vapor component is a mixture of an organosilicon monomer containing a double bond structure and two multifunctional unsaturated hydrocarbons and hydrocarbon derivatives, and the multifunctional unsaturated hydrocarbon and hydrocarbon derivatives in the monomer vapor
  • the mass fraction of quasi-derivatives is 29%.
  • the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 150W, and the continuous discharge time is 600s, and then enters the coating stage, and the plasma discharge power is adjusted to 60W, and the continuous discharge time is 800s.
  • the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feeding pump, and the flow rate of the monomer steam is 500 ⁇ L /min; wherein said one type of organosilicon monomer containing a double bond structure is vinyltriethoxysilane; and said two kinds of polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives are: isoprene and di Ethylene glycol acrylate.
  • the plasma discharge method is radio frequency discharge.
  • the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 800 nm.
  • the polymer film layer can be prepared according to the following steps:
  • the substrate is placed in the reaction chamber of the PECVD device, the reaction chamber is closed and the reaction chamber is continuously evacuated, and the vacuum degree in the reaction chamber is evacuated to 20 millitorr, The inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
  • the reaction chamber is a rotating body chamber, and the volume of the reaction chamber is 100L, the temperature of the reaction chamber is controlled at 30° C., and the flow rate of the inert gas is: 15 sccm.
  • the substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
  • the monomer vapor component is a mixture of an organosilicon monomer containing a double bond structure and two multifunctional unsaturated hydrocarbons and hydrocarbon derivatives, and the multifunctional unsaturated hydrocarbon and hydrocarbon derivatives in the monomer vapor
  • the mass fraction of quasi-derivatives is 29%.
  • the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 150W, and the continuous discharge time is 600s, and then enters the coating stage, and the plasma discharge power is adjusted to 60W, and the continuous discharge time is 3200s.
  • the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feeding pump, and the flow rate of the monomer steam is 500 ⁇ L /min; wherein said one type of organosilicon monomer containing a double bond structure is vinyltriethoxysilane; and said two kinds of polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives are: isoprene and di Ethylene glycol acrylate.
  • the plasma discharge method is radio frequency discharge.
  • the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 10 nm.
  • the polymer film layer can be prepared according to the following steps:
  • the base material is placed in the reaction chamber of the nano film layer preparation equipment, the reaction chamber is closed and the reaction chamber is continuously evacuated, and the vacuum degree in the reaction chamber is evacuated to 10 mTorr, the inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
  • the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 50L, the temperature of the reaction chamber is controlled at 25° C., and the flow rate of the inert gas is: 5 sccm.
  • the substrate moves in a circular motion in the reaction chamber at a speed of 1 revolution/min.
  • Film layer preparation feed monomer vapor into the reaction chamber, evacuate to a vacuum of 30 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer.
  • the monomer vapor component is a long-chain alkyl acrylate compound.
  • the plasma discharge process is a pulse discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, and the pretreatment stage plasma
  • the bulk discharge power is 150W
  • the continuous discharge time is 450s
  • the coating stage is pulse discharge
  • the power is 30W
  • the time is 600s
  • the frequency of pulse discharge is 10HZ
  • the pulse duty ratio is 1:1.
  • the monomer steam is introduced into the reaction chamber by a low pressure of 100 mTorr to atomize and volatilize the monomer through the feed pump, and the flow rate of the monomer steam is 30 ⁇ L /min; wherein the long-chain alkyl acrylate compound is n-hexyl methacrylate.
  • the plasma discharge method is radio frequency discharge.
  • Post-treatment Stop feeding the monomer steam, stop the plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 10 mTorr for 1 min, feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
  • the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 10 um.
  • the polymer film layer can be prepared according to the following steps:
  • Pre-treatment place the base material in the reaction chamber of the nano film layer preparation equipment, close the reaction chamber and continuously evacuate the reaction chamber, and evacuate the vacuum degree in the reaction chamber to 200 mTorr, the inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
  • the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 1000L, the temperature of the reaction chamber is controlled at 60 ° C, and the flow rate of the inert gas is 300 sccm.
  • the substrate moves in a circular motion in the reaction chamber at a speed of 3 revolutions/min.
  • Film layer preparation feed monomer vapor into the reaction chamber, evacuate to a vacuum of 300 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer.
  • the monomer vapor component is a fluorine-containing acrylate compound.
  • the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 600W, and the continuous discharge time is 450s, and then enters the coating stage, and the plasma discharge power is adjusted to 200W, and the continuous discharge time is 14400s.
  • the monomer steam is introduced into the reaction chamber by a low pressure of 300 mTorr to atomize and volatilize the monomer through the feed pump, and the flow rate of the monomer steam is 1000 ⁇ L /min; wherein the fluorine-containing acrylate compound is 1H, 1H, 2H, 2H-perfluorodecyl acrylate.
  • the plasma discharge mode is microwave discharge.
  • the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 20 nm.
  • the polymer film layer can be prepared according to the following steps:
  • Pretreatment place the base material in the reaction chamber of the nano film layer preparation equipment, close the reaction chamber and continuously evacuate the reaction chamber, and evacuate the vacuum degree in the reaction chamber to 20 In mTorr, the inert gas He is fed, and the motion mechanism is turned on, so that the substrate moves in the reaction chamber.
  • the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 200L, the temperature of the reaction chamber is controlled at 40 ° C, and the flow rate of the inert gas is 20 sccm.
  • the substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
  • Film layer preparation feed monomer vapor into the reaction chamber, evacuate to a vacuum of 150 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer.
  • the monomer vapor component is an epoxy monomer.
  • the plasma discharge process is a pulse discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, and the pretreatment stage plasma
  • the body discharge power is 200W
  • the continuous discharge time is 100s
  • the coating stage is pulse discharge
  • the power is 100W
  • the time is 600s
  • the frequency of pulse discharge is 500HZ
  • the pulse duty ratio is 1:10.
  • the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feed pump, and the flow rate of the monomer steam is 100 ⁇ L /min; wherein the epoxy monomer is 3-glycidyl etheroxypropyl triethoxysilane.
  • the plasma discharge method is radio frequency discharge.
  • Post-processing stop feeding monomer steam, stop plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 50 mTorr for 1 min, feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
  • the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 2 ⁇ m.
  • the polymer film layer can be prepared according to the following steps:
  • Pretreatment place the base material in the reaction chamber of the nano film layer preparation equipment, close the reaction chamber and continuously evacuate the reaction chamber, and evacuate the vacuum degree in the reaction chamber to 20 In mTorr, the inert gas He is fed, and the motion mechanism is turned on, so that the substrate moves in the reaction chamber.
  • the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 200L, the temperature of the reaction chamber is controlled at 40 ° C, and the flow rate of the inert gas is 20 sccm.
  • the substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
  • Film layer preparation feed monomer vapor into the reaction chamber, evacuate to a vacuum of 150 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer.
  • the monomer vapor component is a fluorine-containing olefin monomer.
  • the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 200W, and the continuous discharge time is 100s, and then enters the coating stage, and the plasma discharge power is adjusted to 100W, and the continuous discharge time is 7200s.
  • the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feeding pump, and the flow rate of the monomer steam is 600 ⁇ L /min; wherein the fluorine-containing olefin monomer is 1H, 1H, 2H-perfluoro-1-dodecene.
  • the plasma discharge method is radio frequency discharge.
  • Post-processing stop feeding monomer steam, stop plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 50 mTorr for 1 min, feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
  • the high-temperature aging test mentioned in this application first place the LED lamp bead sample in a high-temperature box at 85°C for 48 hours, and then light it up to observe whether the LED lamp bead has dead light.
  • High temperature and high humidity test Place the LED lamp bead sample without power in the high temperature and humidity test chamber, where the temperature and humidity of the test chamber are set to 50°C and 90% RH respectively, so that the LED lamp bead sample can be tested under high temperature and high humidity. Place it in the environment for 216 hours; during this period, turn on the lamp beads at intervals of 72 hours, observe the electrical performance of the lamp bead module, and observe whether the display of the lamp board is normal (such as whether there is a large area of dead lights/lack of color).
  • Red ink test First configure the red ink alcohol mixture, the ratio of the two is 1:1; then place the LED lamp bead sample in the red ink alcohol mixture, boil it at 95°C for 4 hours, and then observe whether there is red ink inside the lamp bead. Ink seeps in.
  • Vulcanization test First take 1g of sulfur powder and place it in a 25mL beaker, then put the 25mL beaker into the center of a 500mL U-shaped bottle; then put the LED lamp bead sample into the U-shaped cup, with the front of the lamp bead facing up, and wrap the lamp with label paper The beads are placed evenly in the center of the U-shaped cup lid; finally, the 500mL U-shaped bottle is sealed and baked in an oven at 105°C for 4 hours to observe whether the lamp beads appear black, glue cracked, or fall off.
  • Thermal shock test first place the LED lamp bead sample in a thermal shock box at -40°C to 100°C; Whether there is a large area of dead lights or lack of color), whether the appearance of the light board is normal (such as whether there are abnormalities such as whitening and delamination).
  • the protective LED packaging method in order to further verify the effect of the protective LED packaging method, it is necessary to carry out light decay experiments, vulcanization experiments, and weldability tests on the protective LED finished products (such as coated LED lamp beads, etc.).
  • the protective LED finished products such as coated LED lamp beads, etc.
  • the light attenuation experiment is to confirm the brightness attenuation of the LED lamp bead after coating, and the requirement of the light attenuation experiment is that the photoelectric parameter test LM light attenuation is less than or equal to 5%, and the xy offset is less than or equal to 0.008.
  • light attenuation experiments are carried out on the LED lamp beads before and after coating, wherein the light attenuation data of the LED lamp beads coated with 200nm are shown in Figure 13A, and the light decay data of the LED lamp beads coated with 800nm are shown in Figure 13B. It is easy to know from the light decay data: the average brightness decay of the LED lamp beads before and after coating is less than 1.1%, and the average xy shift is less than 0.0011, which meets the requirements of the light decay experiment.
  • the vulcanization experiment can be carried out according to different types of LED brackets, wherein the LED brackets are usually divided into hard rubber blanking type LED brackets, hard rubber cutting type LED brackets and soft rubber cutting type LED brackets, and the vulcanization experiment
  • the conditions include: 1) the number of experimental samples is 10pcs; 2) the amount of sulfur powder added is 1.3mg/ml; 3) the experimental temperature is 75°C ⁇ 2%; the high temperature storage experiment is 8H.
  • the requirement of the vulcanization experiment is that the appearance of the LED lamp bead is inspected after the above conditions, and the inside and outside of the lamp bead are not allowed to have black, glue cracking, degumming and other bad phenomena.
  • vulcanization experiments were carried out on uncoated LED lamp beads with various bracket types, LED lamp beads with 200nm coating and LED lamp beads with 800nm coating, wherein when the bracket type is hard rubber blanking type, the uncoated Figure 14A, 14B and 14C show the vulcanization attenuation data of the LED lamp bead with 200nm coating, and the LED lamp bead with 800nm coating;
  • the vulcanization attenuation data of 200nm-coated LED lamp beads and 800nm-coated LED lamp beads are shown in Figure 15A, 15B, and 15C in sequence; Figure 16 shows. It is easy to know from the vulcanization attenuation data: Under the test conditions, the hard rubber blanking type, hard rubber cutting type and soft rubber cutting type coated LED lamp beads did not appear black.
  • the solderability test can be performed on the 360 omni-directional coated LED lamp beads and the LED lamp beads coated after covering the back, so as to observe whether there is cracking and discoloration in the appearance after three reflow soldering at 270°C and 10S.
  • the results of the weldability experiment show that the weldability of the coated LED lamp beads meets the requirements, and the lighting rate is 100%.
  • the conduction experiment of the spectroscopic probe is to test the conductivity of the blanking type pinch test and the conductivity of the blanking type bottom test.
  • the experimental results prove that the lighting rate of the LED lamp beads corresponding to the conductivity of the blanking type bottom test is 100%. .
  • the thermal shock test includes cold punch + red ink test and cold punch + vulcanization test, wherein the conditions of the thermal shock test are between -40°C, 15min and 100°C, 15min, and 600 cycles;
  • the condition of the red ink test is 150°C, 4h, to observe whether there is penetration in the appearance. It is determined by experiments that the coated LED lamp beads all meet the requirements.

Abstract

A polymer film layer, a preparation method therefor, an LED product, a protective LED packaging method, and a protective LED lamp bead. The polymer film layer is formed on the surface of an LED substrate. The polymer film layer is a film layer formed on the surface of the LED substrate by means of a plasma-enhanced chemical vapor deposition method using one or more of a monomer group consisting of an acrylate monomer, a fluorine-containing olefin monomer, an organosilicon monomer, an epoxy monomer and an aromatic ring-containing organic matter monomer as reaction raw materials. The protective LED packaging method comprises the steps of: S110: fixing a light-emitting element to an LED support in a conductive manner; S120: dispensing a glue onto the light-emitting element and the LED support to form a packaging adhesive layer, so as to fabricate an LED semi-finished product; and S130: depositing and forming a polymer film layer on the surface of the LED semi-finished product by means of a plasma-enhanced chemical vapor deposition method to fabricate a protective LED semi-finished product, so as to solve the industry pain point that LED lamp beads are prone to vulcanization, water inflow or oxygen permeation, etc.

Description

一种聚合物膜层及其制备方法和LED产品A kind of polymer film layer and its preparation method and LED product
本申请要求于2021年8月5日提交中国专利局、申请号为202110895813.1,发明名称为“聚合物膜层及其制备方法和LED产品”,以及于2021年8月5日提交中国专利局、申请号为202110895864.4、发明名称为“防护式LED封装方法和防护式LED灯珠”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application is required to be submitted to the China Patent Office on August 5, 2021, the application number is 202110895813.1, and the title of the invention is "polymer film layer and its preparation method and LED products", and it is submitted to the China Patent Office on August 5, 2021. The priority of the Chinese patent application with the application number 202110895864.4 and the invention title "Protective LED packaging method and protective LED lamp bead", the entire content of which is incorporated in this application by reference.
技术领域technical field
本发明涉及LED技术领域,尤其涉及到聚合物膜层及其制备方法和LED产品,及防护式LED封装方法和防护式LED灯珠。The invention relates to the technical field of LEDs, in particular to a polymer film layer and a preparation method thereof, an LED product, a protective LED packaging method, and a protective LED lamp bead.
背景技术Background technique
LED(英文:Light Emitting Diode,中文:发光二极管)是一种能够将电能转化为可见光的固态半导体器件,以直接把电转化为光。LED主要应用于LED路灯、LED建筑景观照明、交通信号LED灯、LED显示屏、汽车照明、室内普通白光LED照明、农业生产用人工LED光源、医疗用LED光源、航空照明LED光源等领域。LED的核心是一个半导体的晶片,晶片被附在支架上,该晶片的一端是负极,另一端连接电源的正极,并且整个晶片被环氧树脂封装起来。相较于白炽灯,LED灯具有节能、使用寿命长、环保等明显优势,但LED灯在使用过程中容易被外部液体/气体侵入,如潮湿空气、雨水、大雪天气等原因进水,它们很容易发生短路腐蚀而损坏,因此晶片的密封就显得非常重要。LED (English: Light Emitting Diode, Chinese: Light Emitting Diode) is a solid-state semiconductor device that can convert electrical energy into visible light, so as to directly convert electricity into light. LEDs are mainly used in LED street lights, LED architectural landscape lighting, traffic signal LED lights, LED display screens, automotive lighting, indoor ordinary white LED lighting, artificial LED light sources for agricultural production, LED light sources for medical use, LED light sources for aviation lighting and other fields. The core of LED is the wafer of a semiconductor, and wafer is attached on the support, and one end of this wafer is negative pole, and the other end connects the positive pole of power supply, and whole wafer is encapsulated by epoxy resin. Compared with incandescent lamps, LED lamps have obvious advantages such as energy saving, long service life, and environmental protection. However, LED lamps are easily invaded by external liquids/gases during use, such as water ingress due to humid air, rain, and heavy snow. It is easy to be damaged by short circuit corrosion, so the sealing of the chip is very important.
然而,传统的环氧树脂散热效果不好,容易造成LED灯光衰、使用寿命下降等问题,因此现在通常采用高分子有机硅作为封装胶以延长LED灯的使用寿命。但硅胶本身以及硅胶与支架密封不佳等原因,仍存在透湿、透氧、透硫、透溴等缺点。However, the traditional epoxy resin does not have a good heat dissipation effect, and it is easy to cause problems such as LED light decay and service life reduction. Therefore, polymer silicone is usually used as the encapsulant to prolong the service life of LED lights. However, due to reasons such as the silica gel itself and poor sealing between the silica gel and the bracket, there are still shortcomings such as moisture permeability, oxygen permeability, sulfur permeability, and bromine permeability.
此外,现有的LED灯的支架通常由金属基体构成,并在基体上镀上银层作为LED灯的光源反射层。而LED灯在实际使用场景中,如空气、湿气、雨天等中的硫(S)、水(H2O)或氧(O2)等会与镀银层发生反应。特别是空气中的S与Ag发生反应会形成Ag2S而导致镀银层发黑、灯珠变暗,进而造成严重的光衰现象。当然,空气中的水分或氧气等进入LED灯内部后也容易与金属发生复杂的化学反应,导致LED灯的光通量严重下降,色温出现明显漂移,甚至出现死灯的现象。In addition, the brackets of existing LED lamps are usually made of a metal base, and a silver layer is plated on the base as a light source reflection layer of the LED lamp. However, in actual use scenarios of LED lights, such as sulfur (S), water (H2O) or oxygen (O2) in air, humidity, rainy days, etc., will react with the silver plating layer. In particular, the reaction between S in the air and Ag will form Ag2S, which will lead to blackening of the silver plating layer and darkening of the lamp beads, which will cause serious light decay. Of course, when moisture or oxygen in the air enters the interior of the LED lamp, it is also prone to complex chemical reactions with the metal, resulting in a serious decrease in the luminous flux of the LED lamp, a significant drift in the color temperature, and even a dead light.
目前,为了解决上述问题,现有技术通常利用液相涂覆的方法,在晶片上涂覆可固化的胶水组合物,如硅橡胶组合物、含金属硅胶组合物等,以实现所需的防护效果。但液相涂覆经固化后,涂层往往达到几微米、上百微米以上,一方面较大厚度的涂层会影响光透过率;另一方面液相固化涂层与晶片的结合力较差,尤其是LED灯的器件表面温度会因使用时间、环境温度而发生较大的变化,导致涂层会发生不同程度的热胀冷缩,使得涂层出现开裂、老化,甚至剥落的问题,从而失去防护效果。At present, in order to solve the above-mentioned problems, the prior art usually utilizes a liquid-phase coating method to coat a curable glue composition on the wafer, such as a silicone rubber composition, a metal-containing silica gel composition, etc., to achieve the required protection. Effect. However, after the liquid-phase coating is cured, the coating often reaches several microns or hundreds of microns. On the one hand, a thicker coating will affect the light transmittance; on the other hand, the bonding force between the liquid-phase cured coating and the chip is relatively weak Poor, especially the surface temperature of the LED lamp will change greatly due to the use time and ambient temperature, resulting in different degrees of thermal expansion and contraction of the coating, causing cracking, aging, and even peeling of the coating. Thus losing the protective effect.
发明内容Contents of the invention
本发明的一个优势在于提供聚合物膜层及其制备方法和LED产品,其能够解决LED灯容易发生硫化、溴化、进水或透氧等存在的行业痛点。An advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, which can solve the industry pain points that LED lamps are prone to vulcanization, bromination, water ingress or oxygen permeability.
本发明的另一个优势在于提供聚合物膜层及其制备方法和LED产品,其中,在本申请的一实施例中,所述聚合物膜层适于大规模在LED基材表面被制备,并且本身具有长效的防硫、防水、或防氧等性能。Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the present application, the polymer film layer is suitable for being prepared on the surface of the LED substrate on a large scale, and It has long-term anti-sulfur, waterproof, or oxygen-proof properties.
本发明的另一个优势在于提供聚合物膜层及其制备方法和LED产品,其中,在本申请的一实施例中,所述聚合物膜层本身能够与LED基材结合牢固,以防出现开裂、老化,甚至剥落的问题。Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer itself can be firmly combined with the LED substrate to prevent cracking , aging, and even peeling problems.
本发明的另一个优势在于提供聚合物膜层及其制备方法和LED产品,其中,在本申请的一实施例中,所述聚合物膜层本身具有较好的透光性能,以防所述聚合物膜层影响LED灯的光通量。Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer itself has better light transmission performance, so as to prevent the The polymer film affects the luminous flux of the LED lamp.
本发明的另一个优势在于提供聚合物膜层及其制备方法和LED产品,其中,在本申请的一实施例中,所述聚合物膜层适用于多种类型的LED基材,并且在形成所述聚合物膜层于LED基材表面的过程中,LED基材本身结构不会被损坏。Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer is suitable for various types of LED substrates, and when formed When the polymer film layer is placed on the surface of the LED substrate, the structure of the LED substrate itself will not be damaged.
本发明的另一个优势在于提供聚合物膜层及其制备方法和LED产品,其中,在本申请的一实施例中,所述聚合物膜层能够通过等离子化学气相沉积法形成于LED基材表面。Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the polymer film layer can be formed on the surface of the LED substrate by plasma chemical vapor deposition .
本发明的另一个优势在于提供聚合物膜层及其制备方法和LED产品,其中,在本申请的一实施例中,所述聚合物膜层的厚度能够在纳米级别,避免影响LED灯的光透过率。Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein, in an embodiment of the application, the thickness of the polymer film layer can be at the nanometer level, so as to avoid affecting the light of the LED lamp transmittance.
本发明的另一个优势在于提供了聚合物膜层及其制备方法和LED产品,其中为了达到上述目的,在本发明中不需要采用昂贵的材料或复杂的结构。因此,本申请成功和有效地提供一解决方案,不只提供了简单的聚合物膜层及其制备方法和LED产品,同时还增加了所述聚合物膜层及其制备方法和LED产品的实用性和可靠性。Another advantage of the present invention is to provide a polymer film layer and its preparation method and LED products, wherein in order to achieve the above objects, no expensive materials or complex structures are used in the present invention. Therefore, the present application successfully and effectively provides a solution that not only provides a simple polymer film layer and its preparation method and LED products, but also increases the practicability of the polymer film layer and its preparation method and LED products and reliability.
为了实现上述至少一优势或其他优点和目的,本发明提供了聚合物膜层,用于在LED基材表面形成,其中所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在该LED基材表面形成的膜层。In order to achieve at least one of the above advantages or other advantages and objectives, the present invention provides a polymer film layer for forming on the surface of the LED substrate, wherein the polymer film layer is made of acrylate monomers, fluorine-containing olefins One or more of the monomer group consisting of monomers, organosilicon monomers, epoxy monomers, and aromatic ring-containing organic monomers is used as the reaction raw material, and the LED base is deposited by plasma-enhanced chemical vapor deposition. The film layer formed on the surface of the material.
根据本发明的一实施例,所述丙烯酸酯类单体包括长链烷基丙烯酸酯类化合物和/或含氟丙烯酸酯类化合物。According to an embodiment of the present invention, the acrylate monomer includes a long-chain alkyl acrylate compound and/or a fluorine-containing acrylate compound.
根据本发明的一实施例,所述长链烷基丙烯酸酯类化合物中烷基的碳原子数大于等于6;其中所述含氟丙烯酸酯类化合物选自2-(全氟丁基)乙基丙烯酸酯、1H,1H,2H,2H-全氟癸基丙烯酸酯、1H,1H,2H,2H-全氟辛醇丙烯酸酯、(全氟环己基)甲基丙烯酸酯、1H,1H,2H,2H-全氟己基甲基丙烯酸酯、1H,1H,2H,2H-全氟辛基甲基丙烯酸酯以及1H,1H,2H,2H-全氟癸基甲基丙烯酸酯中的一种或多种。According to an embodiment of the present invention, the number of carbon atoms in the alkyl group in the long-chain alkyl acrylate compound is greater than or equal to 6; wherein the fluorine-containing acrylate compound is selected from 2-(perfluorobutyl)ethyl Acrylate, 1H,1H,2H,2H-perfluorodecyl acrylate, 1H,1H,2H,2H-perfluorooctyl acrylate, (perfluorocyclohexyl)methacrylate, 1H,1H,2H, One or more of 2H-perfluorohexyl methacrylate, 1H,1H,2H,2H-perfluorooctyl methacrylate and 1H,1H,2H,2H-perfluorodecyl methacrylate .
根据本发明的一实施例,所述长链烷基丙烯酸酯类化合物为选自甲基丙 烯酸正己酯、甲基丙烯酸正辛酯、甲基丙烯酸癸酯、甲基丙烯酸异癸酯、甲基丙烯酸十二酯、甲基丙烯酸十四酯、甲基丙烯酸十六酯、甲基丙烯酸十八酯、丙烯酸正己酯、丙烯酸正辛酯、丙烯酸癸酯、丙烯酸异癸酯、丙烯酸十二酯、丙烯酸十四酯、丙烯酸十六酯以及丙烯酸十八酯中的一种或多种。According to an embodiment of the present invention, the long-chain alkyl acrylate compound is selected from n-hexyl methacrylate, n-octyl methacrylate, decyl methacrylate, isodecyl methacrylate, methacrylic acid Lauryl methacrylate, tetradecyl methacrylate, cetyl methacrylate, octadecyl methacrylate, n-hexyl acrylate, n-octyl acrylate, decyl acrylate, isodecyl acrylate, lauryl acrylate, decaacrylate One or more of tetraester, hexadecyl acrylate and stearyl acrylate.
根据本发明的一实施例,所述含氟烯烃类单体包括四氟乙烯、六氟丙烯、八氟丁烯、全氟壬烯、和/或1H,1H,2H-全氟-1-十二烯。According to an embodiment of the present invention, the fluorine-containing olefin monomers include tetrafluoroethylene, hexafluoropropylene, octafluorobutene, perfluorononene, and/or 1H,1H,2H-perfluoro-1-deca Diene.
根据本发明的一实施例,所述有机硅类单体选自乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷、1,2,2-三氟乙烯基三苯基硅烷、四甲氧基硅烷、三甲氧基氢硅烷、正辛基三乙氧基硅烷、苯基三乙氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、三乙基乙烯基硅烷、六乙基环三硅氧烷、3-(甲基丙烯酰氧)丙基三甲氧基硅烷、苯基三(三甲基硅氧烷基)硅烷、二苯基二乙氧基硅烷、十二烷基三甲氧基硅烷、二甲氧基硅烷以及3-氯丙基三甲氧基硅烷中的一种或多种。According to an embodiment of the present invention, the organosilicon monomer is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, methyl Vinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoximinosilane, Tetramethyldivinyldisiloxane, Dimethylethylene Ethylethoxysilane, 1,2,2-trifluorovinyltriphenylsilane, tetramethoxysilane, trimethoxyhydrogensilane, n-octyltriethoxysilane, phenyltriethoxysilane, Vinyltris(2-methoxyethoxy)silane, triethylvinylsilane, hexaethylcyclotrisiloxane, 3-(methacryloxy)propyltrimethoxysilane, phenyltris One or more of (trimethylsiloxane) silane, diphenyldiethoxysilane, dodecyltrimethoxysilane, dimethoxysilane and 3-chloropropyltrimethoxysilane kind.
根据本发明的一实施例,所述环氧类单体包括3-缩水甘油醚氧基丙基三乙氧基硅烷和/或γ-缩水甘油醚氧丙基三甲氧基硅烷。According to an embodiment of the present invention, the epoxy monomer includes 3-glycidoxypropyltriethoxysilane and/or γ-glycidoxypropyltrimethoxysilane.
根据本发明的一实施例,所述反应原料为由至少一种含双键结构的有机硅类单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,并且所述反应原料中所述至少一种多官能度不饱和烃及烃类衍生物所占的质量分数为10%~60%。According to an embodiment of the present invention, the reaction raw material is a mixture composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, and the reaction The mass fraction of the at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative in the raw material is 10%-60%.
根据本发明的一实施例,所述含双键结构的有机硅类单体选自乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷以及1,2,2-三氟乙烯基三苯基硅烷中的一种或多种,并且所述多官能度不饱和烃及烃类衍生物选自异戊二烯、二丙烯酸乙二醇酯、1,3-丁二烯、1,4-戊二烯、乙氧基化三羟甲基丙烷三丙烯酸酯、二缩三丙二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、二乙二醇二乙烯基醚、二丙烯酸新戊 二醇酯、甲基丙烯酸1,4-丁二醇酯、二甲基丙烯酸1,6-己二醇酯、二甲基丙烯酸乙二醇酯、二甲基丙烯酸二乙二醇酯、二甲基丙烯酸三乙二醇酯、二甲基丙烯酸四乙二醇酯、二甲基丙烯酸1,3-丁二醇酯、二甲基丙烯酸新戊二醇酯、甲基丙烯酸酐、二丙-2-烯基2-亚甲基丁二酸酯、2-亚苄基丙二酸二丙-2-烯基酯以及二烯丙基丙二酸二乙酯中的一种或多种。According to an embodiment of the present invention, the organosilicon monomer containing a double bond structure is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethyl Oxysilane, Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributylketoximosilane, Tetramethyldivinyldisiloxane , dimethylvinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane, and the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives are selected from iso Pentadiene, Ethylene Glycol Diacrylate, 1,3-Butadiene, 1,4-Pentadiene, Ethoxylated Trimethylolpropane Triacrylate, Tripropylene Glycol Diacrylate, Polyethylene Diol diacrylate, 1,6-hexanediol diacrylate, diethylene glycol divinyl ether, neopentyl glycol diacrylate, 1,4-butylene glycol methacrylate, dimethacrylic acid 1,6-hexanediol, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, dimethyl 1,3-butylene glycol acrylate, neopentyl glycol dimethacrylate, methacrylic anhydride, diprop-2-enyl 2-methylene succinate, 2-benzylidene propane One or more of diprop-2-enyl ester and diethyl diallyl malonate.
根据本发明的一实施例,所述聚合物膜层的静态水接触角大于100°。According to an embodiment of the present invention, the static water contact angle of the polymer film layer is greater than 100°.
根据本发明的一实施例,所述聚合物膜层的厚度为10nm-10μm。According to an embodiment of the present invention, the thickness of the polymer film layer is 10 nm-10 μm.
根据本发明的另一方面,本发明提供了聚合物膜层的制备方法,包括步骤:According to another aspect of the present invention, the present invention provides the preparation method of polymer membrane layer, comprises steps:
在PECVD装置内由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在LED基材的表面形成该聚合物膜层。In the PECVD device, one or more of the monomer groups composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers are used as The reaction raw materials are used to form the polymer film layer on the surface of the LED substrate by plasma enhanced chemical vapor deposition.
根据本发明的一实施例,在通入该反应原料之前,对该PECVD装置抽真空,并通入等离子源气体,其中该等离子源气体是惰性气体。According to an embodiment of the present invention, before feeding the reaction materials, the PECVD apparatus is vacuumed and a plasma source gas is fed, wherein the plasma source gas is an inert gas.
根据本发明的一实施例,在形成该聚合物膜层之后,停止等离子体放电和抽真空,以取出形成有该聚合物膜层的该LED基材。According to an embodiment of the present invention, after the polymer film layer is formed, the plasma discharge is stopped and the vacuum is pumped, so as to take out the LED substrate on which the polymer film layer is formed.
根据本发明的一实施例,该PECVD装置的反应腔室的温度控制为25~60℃。According to an embodiment of the present invention, the temperature of the reaction chamber of the PECVD device is controlled at 25-60°C.
根据本发明的一实施例,该聚合物膜层的形成过程包括一预处理阶段和一镀膜阶段,在该预处理阶段,等离子体的放电功率为100~600W,持续放电时间60~1800s,然后进入该镀膜阶段时,调整该等离子体的放电功率为10~200W,持续放电时间600~36000s。According to an embodiment of the present invention, the forming process of the polymer film layer includes a pretreatment stage and a film coating stage. In the pretreatment stage, the discharge power of the plasma is 100-600W, and the discharge time is 60-1800s, and then When entering the coating stage, the discharge power of the plasma is adjusted to 10-200W, and the discharge duration is 600-36000s.
根据本发明的一实施例,该聚合物膜层的形成过程包括预处理阶段和镀膜阶段,该预处理阶段的等离子体放电功率为150~600W,持续放电时间60~1800s,然后进入该镀膜阶段,该镀膜阶段为脉冲放电,功率为10~300W,时间为600s~36000s,脉冲放电的频率为20Hz-20KHz,脉冲的占空比为1:1~1:500。According to an embodiment of the present invention, the formation process of the polymer film layer includes a pretreatment stage and a coating stage, the plasma discharge power of the pretreatment stage is 150-600W, and the discharge time is 60-1800s, and then enters the coating stage , the coating stage is a pulse discharge, the power is 10-300W, the time is 600s-36000s, the frequency of the pulse discharge is 20Hz-20KHz, and the duty ratio of the pulse is 1:1-1:500.
根据本发明的另一方面,本发明提供了具有聚合物膜层的LED产品,其中所述LED产品是通过被暴露在由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种 作为反应原料的环境中,通过等离子体增强化学气相沉积法沉积在LED基材的表面的至少一部分形成聚合物膜层制备而成的。According to another aspect of the present invention, the present invention provides an LED product having a polymer film layer, wherein the LED product is obtained by being exposed to an acrylic monomer, a fluorine-containing olefin monomer, a silicone monomer One or more of the monomer group consisting of epoxy monomers and aromatic ring-containing organic monomers are used as reaction raw materials, and are deposited on at least the surface of the LED substrate by plasma enhanced chemical vapor deposition. A part is prepared by forming a polymer film layer.
根据本发明的一实施例,所述LED基材为LED成品或LED半成品。According to an embodiment of the present invention, the LED substrate is a finished LED or a semi-finished LED.
本发明的一个优势在于提供防护式LED封装方法和防护式LED灯珠,其能够解决LED灯珠容易发生硫化、溴化、进水或透氧等存在的行业痛点。An advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, which can solve the industry pain points that LED lamp beads are prone to vulcanization, bromination, water ingress or oxygen permeability.
本发明的另一个优势在于提供防护式LED封装方法和防护式LED灯珠,其中,在本申请的一实施例中,所述防护式LED封装方法能够大规模地在LED基材表面制备出膜层,并且本身具有长效的防硫、防水、或防氧等性能。Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the protective LED packaging method can prepare a film on the surface of the LED substrate on a large scale Layer, and itself has long-term anti-sulfur, waterproof, or oxygen-proof properties.
本发明的另一个优势在于提供防护式LED封装方法和防护式LED灯珠,其中,在本申请的一实施例中,所述防护式LED封装方法所制备的膜层本身能够与LED基材结合牢固,以防出现开裂、老化,甚至剥落的问题。Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the film layer itself prepared by the protective LED packaging method can be combined with the LED substrate Strong to prevent cracking, aging, or even peeling problems.
本发明的另一个优势在于提供防护式LED封装方法和防护式LED灯珠,其中,在本申请的一实施例中,所述防护式LED封装方法所制备的膜层本身具有较好的透光性能,以防所述聚合物膜层影响LED灯的光通量。Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the film layer prepared by the protective LED packaging method itself has better light transmission performance, in case the polymer film affects the luminous flux of the LED lamp.
本发明的另一个优势在于提供防护式LED封装方法和防护式LED灯珠,其中,在本申请的一实施例中,所述防护式LED封装方法能够通过等离子化学气相沉积法在LED基材表面形成膜层,以起到较好的防水、防硫或防氧等性能。Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the protective LED packaging method can be deposited on the surface of the LED substrate Form a film layer to achieve better waterproof, sulfur-proof or oxygen-proof performance.
本发明的另一个优势在于提供防护式LED封装方法和防护式LED灯珠,其中,在本申请的一实施例中,所述防护式LED封装方法适用于多种类型的LED基材,并且在形成聚合物膜层于LED基材表面的过程中,LED基材本身结构不会被损坏。Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein, in an embodiment of the application, the protective LED packaging method is applicable to various types of LED substrates, and in During the process of forming the polymer film layer on the surface of the LED substrate, the structure of the LED substrate itself will not be damaged.
本发明的另一个优势在于提供了防护式LED封装方法和防护式LED灯珠,其中为了达到上述目的,在本发明中不需要采用昂贵的材料或复杂的结构。因此,本申请成功和有效地提供一解决方案,不只提供了简单的防护式LED封装方法和防护式LED灯珠,同时还增加了所述防护式LED封装方法和防护式LED灯珠的实用性和可靠性。Another advantage of the present invention is to provide a protective LED packaging method and a protective LED lamp bead, wherein in order to achieve the above purpose, no expensive materials or complicated structures are used in the present invention. Therefore, the present application successfully and effectively provides a solution, which not only provides a simple protective LED packaging method and protective LED lamp bead, but also increases the practicability of the protective LED packaging method and protective LED lamp bead and reliability.
为了实现上述至少一优势或其他优点和目的,本发明提供了防护式LED封装方法,包括步骤:In order to achieve at least one of the above advantages or other advantages and objectives, the present invention provides a protective LED packaging method, including steps:
S110:将发光元件可导通地固定于LED支架;S110: Conductively fixing the light-emitting element to the LED bracket;
S120:点胶于该发光元件和该LED支架以形成封装胶层,以制成LED半成品;以及S120: dispensing glue on the light-emitting element and the LED bracket to form an encapsulation glue layer, so as to make a semi-finished LED product; and
S130:通过等离子体增强化学气相沉积法,在该LED半成品的表面沉积形成聚合物膜层,以制成防护式LED半成品。S130: Deposit and form a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to manufacture a protective LED semi-finished product.
根据本申请的一实施例,该聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过该等离子体增强化学气相沉积法在该LED半成品的表面形成的膜层。According to an embodiment of the present application, the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers. One or more of the monomer groups are used as reaction raw materials, and the film layer is formed on the surface of the LED semi-finished product by the plasma enhanced chemical vapor deposition method.
根据本申请的一实施例,该反应原料为由至少一种含双键结构的有机硅类单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,并且该反应原料中该两种多官能度不饱和烃及烃类衍生物所占的质量分数为10%~60%。According to an embodiment of the present application, the reaction raw material is a mixture composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives, and the reaction raw material The mass fraction of the two kinds of polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives is 10%-60%.
根据本申请的一实施例,所述的防护式LED封装方法,进一步包括步骤:According to an embodiment of the present application, the protective LED packaging method further includes the steps of:
S140:将该防护式LED半成品切割成单颗,以获得防护式LED成品。S140 : cutting the semi-finished protective LED into single pieces to obtain finished protective LED products.
根据本申请的一实施例,所述步骤S130,包括步骤:According to an embodiment of the present application, the step S130 includes the steps of:
S131:前处理,在放置该LED半成品于镀膜设备的镀膜腔室以抽真空后,通入等离子源气体;S131: pre-treatment, after placing the LED semi-finished product in the coating chamber of the coating equipment for vacuuming, injecting plasma source gas;
S132:沉积,在该镀膜设备由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在该LED半成品的表面形成该聚合物膜层;以及S132: Deposition, one of the monomer groups composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers in the coating equipment or more as reaction raw materials, forming the polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition; and
S133:后处理,停止等离子体放电和抽真空,以取出形成有该聚合物膜层的该LED半成品。S133: post-processing, stop the plasma discharge and vacuumize, so as to take out the LED semi-finished product formed with the polymer film layer.
根据本申请的一实施例,所述步骤S130,进一步包括步骤:According to an embodiment of the present application, the step S130 further includes the steps of:
在所述步骤S131之前,对该LED半成品的背表面进行遮蔽处理;和Before the step S131, the back surface of the LED semi-finished product is shielded; and
在所述步骤S133之后,对该防护式LED半成品的背表面进行去遮蔽处理。After the step S133, the back surface of the protective LED semi-finished product is de-shielded.
根据本申请的一实施例,先将遮蔽后的该LED半成品摆盘至该镀膜设备 的置物盘,再通过干燥柜对摆盘后的该LED半成品进行干燥处理,以在获得干燥后的该LED半成品后再放置于该镀膜设备的所述镀膜腔室内。According to an embodiment of the present application, first place the shaded LED semi-finished product on the storage tray of the coating equipment, and then dry the placed LED semi-finished product through a drying cabinet, so as to obtain the dried LED The semi-finished product is then placed in the coating chamber of the coating equipment.
根据本申请的一实施例,所述步骤S110,包括步骤:According to an embodiment of the present application, the step S110 includes the steps of:
使用平面锡膏印刷机和3D印刷钢网在EMC支架的碗杯内印刷锡膏;Use a flat solder paste printer and a 3D printing stencil to print solder paste in the bowl of the EMC bracket;
将印刷好的该EMC支架在LED固晶机上进行固晶作业,以将该发光元件固定于该EMC支架;以及The printed EMC bracket is carried out on the LED crystal bonding machine for solid crystal operation, so that the light-emitting element is fixed on the EMC bracket; and
通过回流焊机台进行回流焊作业,以可导通地连接该发光元件和该EMC支架。A reflow soldering operation is performed by a reflow soldering machine, so as to conductively connect the light emitting element and the EMC bracket.
根据本申请的另一方面,本申请进一步提供了防护式LED封装方法,包括步骤:According to another aspect of the present application, the present application further provides a protective LED packaging method, comprising the steps of:
通过等离子体增强化学气相沉积法,在LED支架的镀银表面沉积形成聚合物膜层;By plasma-enhanced chemical vapor deposition, a polymer film is deposited on the silver-plated surface of the LED bracket;
将发光元件可导通地固定于镀有该聚合物膜层的该LED支架;Conductively fixing the light-emitting element to the LED bracket coated with the polymer film layer;
点胶于该发光元件和该LED支架以形成封装胶层,以制成防护式LED半成品;以及Dispensing glue on the light-emitting element and the LED bracket to form an encapsulation glue layer to make a protective LED semi-finished product; and
将该防护式LED半成品切割成单颗,以获得防护式LED成品。The protected LED semi-finished product is cut into individual pieces to obtain a protected LED finished product.
根据本申请的另一方面,本申请进一步提供了防护式LED封装方法,包括步骤:According to another aspect of the present application, the present application further provides a protective LED packaging method, comprising the steps of:
将发光元件可导通地固定于LED支架;Conductively fixing the light-emitting element to the LED bracket;
通过等离子体增强化学气相沉积法,在该LED支架的镀银表面和该发光元件的表面沉积形成聚合物膜层;Depositing a polymer film layer on the silver-plated surface of the LED bracket and the surface of the light-emitting element by plasma-enhanced chemical vapor deposition;
点胶于该聚合物膜层以形成封装胶层,以制成防护式LED半成品;以及Dispensing glue on the polymer film layer to form an encapsulation layer to make a protective LED semi-finished product; and
将该防护式LED半成品切割成单颗,以获得防护式LED成品。The protected LED semi-finished product is cut into individual pieces to obtain a protected LED finished product.
依据本发明的另一方面,本发明提供防护式LED灯珠,包括:According to another aspect of the present invention, the present invention provides a protective LED lamp bead, including:
LED支架,其中所述LED支架具有镀银表面;LED brackets, wherein the LED brackets have a silver-plated surface;
发光元件,其中所述发光元件被可导通地固定于所述LED支架的所述镀银表面;a light emitting element, wherein the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
封装胶层,其中所述封装胶层包覆地封装所述发光元件;以及an encapsulating adhesive layer, wherein the encapsulating adhesive layer encapsulates the light-emitting element; and
聚合物膜层,其中所述聚合物膜层被镀于所述封装胶层的外表面。A polymer film layer, wherein the polymer film layer is plated on the outer surface of the packaging adhesive layer.
根据本申请的一实施例,所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在所述封装胶层的所述外表面形成的膜层。According to an embodiment of the present application, the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers One or more of the monomer groups are used as reaction raw materials, and a film layer is formed on the outer surface of the encapsulation adhesive layer by plasma enhanced chemical vapor deposition.
根据本申请的一实施例,所述反应原料为由至少一种含双键结构的有机硅类单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,并且所述反应原料中的所述多官能度不饱和烃及烃类衍生物所占的质量分数为10%~60%。According to an embodiment of the present application, the reaction raw material is a mixture composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, and the reaction The mass fraction of the polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives in the raw material is 10%-60%.
根据本申请的一实施例,所述含双键结构的有机硅类单体选自乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷和1,2,2-三氟乙烯基三苯基硅烷中的一种或多种,并且所述多官能度不饱和烃及烃类衍生物选自异戊二烯、二丙烯酸乙二醇酯、1,3-丁二烯、1,4-戊二烯、乙氧基化三羟甲基丙烷三丙烯酸酯、二缩三丙二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、二乙二醇二乙烯基醚、二丙烯酸新戊二醇酯、甲基丙烯酸1,4-丁二醇酯、二甲基丙烯酸1,6-己二醇酯、二甲基丙烯酸乙二醇酯、二甲基丙烯酸二乙二醇酯、二甲基丙烯酸三乙二醇酯、二甲基丙烯酸四乙二醇酯、二甲基丙烯酸1,3-丁二醇酯、二甲基丙烯酸新戊二醇酯、甲基丙烯酸酐、二丙-2-烯基2-亚甲基丁二酸酯、2-亚苄基丙二酸二丙-2-烯基酯和二烯丙基丙二酸二乙酯中的一种或多种。According to an embodiment of the present application, the organosilicon monomer containing a double bond structure is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethyl Oxysilane, Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributylketoximosilane, Tetramethyldivinyldisiloxane , dimethylvinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane, and the polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives are selected from iso Pentadiene, Ethylene Glycol Diacrylate, 1,3-Butadiene, 1,4-Pentadiene, Ethoxylated Trimethylolpropane Triacrylate, Tripropylene Glycol Diacrylate, Polyethylene Diol diacrylate, 1,6-hexanediol diacrylate, diethylene glycol divinyl ether, neopentyl glycol diacrylate, 1,4-butylene glycol methacrylate, dimethacrylic acid 1,6-hexanediol, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, dimethyl 1,3-butylene glycol acrylate, neopentyl glycol dimethacrylate, methacrylic anhydride, diprop-2-enyl 2-methylene succinate, 2-benzylidene propane One or more of diprop-2-enyl ester and diethyl diallyl malonate.
根据本申请的一实施例,所述聚合物膜层的静态水接触角大于100°。According to an embodiment of the present application, the static water contact angle of the polymer film layer is greater than 100°.
根据本申请的一实施例,所述聚合物膜层的厚度为10nm-10μm。According to an embodiment of the present application, the thickness of the polymer film layer is 10 nm-10 μm.
根据本申请的一实施例,所述LED支架为EMC支架。According to an embodiment of the present application, the LED bracket is an EMC bracket.
根据本申请的另一方面,本申请进一步提供了防护式LED灯珠,包括:According to another aspect of the application, the application further provides a protective LED lamp bead, including:
LED支架,其中所述LED支架具有镀银表面;LED brackets, wherein the LED brackets have a silver-plated surface;
发光元件,其中所述发光元件被可导通地固定于所述LED支架的所述镀银表面;a light emitting element, wherein the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
封装胶层,其中所述封装胶层包覆地封装所述发光元件;以及an encapsulating adhesive layer, wherein the encapsulating adhesive layer encapsulates the light-emitting element; and
聚合物膜层,其中所述聚合物膜层被镀于所述LED支架的所述镀银表面,并且所述聚合物膜层位于所述LED支架的所述镀银表面与所述发光元件和所述封装胶层之间。A polymer film layer, wherein the polymer film layer is plated on the silver-plated surface of the LED bracket, and the polymer film layer is located on the silver-plated surface of the LED bracket and the light-emitting element and between the encapsulation layers.
根据本申请的一实施例,所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在所述封装胶层的所述外表面形成的膜层。According to an embodiment of the present application, the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers One or more of the monomer groups are used as reaction raw materials, and a film layer is formed on the outer surface of the encapsulation adhesive layer by plasma enhanced chemical vapor deposition.
根据本申请的另一方面,本申请进一步提供了防护式LED灯珠,包括:According to another aspect of the application, the application further provides a protective LED lamp bead, including:
LED支架,其中所述LED支架具有镀银表面;LED brackets, wherein the LED brackets have a silver-plated surface;
发光元件,其中所述发光元件被可导通地固定于所述LED支架的所述镀银表面;a light emitting element, wherein the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
封装胶层,其中所述封装胶层包覆地封装所述发光元件;以及an encapsulating adhesive layer, wherein the encapsulating adhesive layer encapsulates the light-emitting element; and
聚合物膜层,其中所述聚合物膜层被镀于所述LED支架的所述镀银表面和所述发光元件的表面,并且所述聚合物膜层位于所述封装胶层与所述发光元件和所述LED支架的所述镀银表面之间。A polymer film layer, wherein the polymer film layer is plated on the silver-plated surface of the LED bracket and the surface of the light-emitting element, and the polymer film layer is located between the encapsulation adhesive layer and the light-emitting component and the silvered surface of the LED holder.
根据本申请的一实施例,所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在所述封装胶层的所述外表面形成的膜层。According to an embodiment of the present application, the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers One or more of the monomer groups are used as reaction raw materials, and a film layer is formed on the outer surface of the encapsulation adhesive layer by plasma enhanced chemical vapor deposition.
根据本申请的另一方面,本申请进一步提供了防护式LED封装系统,包括:According to another aspect of the present application, the present application further provides a protective LED packaging system, comprising:
固晶设备,其中所述固晶设备用于将发光元件可导通地固定于LED支架;A crystal-bonding device, wherein the crystal-bonding device is used to conductively fix the light-emitting element to the LED bracket;
点胶设备,其中所述点胶设备用于点胶于该发光元件和该LED支架以形成封装胶层,以制成LED半成品;以及Dispensing equipment, wherein the dispensing equipment is used for dispensing glue on the light-emitting element and the LED bracket to form an encapsulation layer to make LED semi-finished products; and
镀膜设备,其中所述镀膜设备用于通过等离子体增强化学气相沉积法,在该LED半成品的表面沉积形成聚合物膜层,以制成防护式LED半成品。Coating equipment, wherein the coating equipment is used for depositing and forming a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to make a protective LED semi-finished product.
根据本申请的一实施例,所述镀膜设备包括镀膜腔室、被可活动地设置于所述镀膜腔室的可活动支架、被可拆卸地置于所述可活动支架的置物盘、给排气系统以及激发系统,其中所述置物盘用于对多个该LED半成品进行摆 盘放置,并且所述可活动支架用于带动被放置于所述置物盘的该LED半成品在所述镀膜腔室内运动,其中所述给排气系统与所述镀膜腔室可导通地连接,用于在向外排气以在所述镀膜腔室内形成真空度的同时,向内供气以向所述镀膜腔室提供反应原料,其中所述激发系统被对应地设置于所述镀膜腔室,用于在所述镀膜腔室内产生激发电磁场,以电离该反应原料而形成等离子体,使得该等离子体在该LED半成品的表面沉积以形成该聚合物膜层。According to an embodiment of the present application, the coating equipment includes a coating chamber, a movable bracket movably arranged in the coating chamber, a storage tray detachably placed in the movable bracket, a supply and discharge Gas system and excitation system, wherein the storage tray is used to place a plurality of LED semi-finished products on a plate, and the movable bracket is used to drive the LED semi-finished products placed on the storage tray in the coating chamber movement, wherein the supply and exhaust system is connected to the coating chamber in a conductive manner, and is used to supply gas inward to the coating chamber while exhausting outward to form a vacuum in the coating chamber The chamber provides reaction raw materials, wherein the excitation system is correspondingly arranged in the coating chamber for generating an excitation electromagnetic field in the coating chamber to ionize the reaction raw materials to form plasma, so that the plasma is in the coating chamber The surface of the LED semi-finished product is deposited to form the polymer film layer.
根据本申请的一实施例,所述可活动支架包括一个公转支架和多个自转支架,其中所述公转支架被可转动地设置于所述镀膜腔室,并且所述多个自转支架分别被可转动地设置于所述镀膜腔室,以形成行星转架,其中所述多个自转支架用于放置所述置物盘。According to an embodiment of the present application, the movable support includes a revolving support and a plurality of self-rotating supports, wherein the revolving support is rotatably arranged in the coating chamber, and the plurality of self-rotating supports are respectively movably It is rotatably arranged in the coating chamber to form a planetary turret, wherein the plurality of self-rotating supports are used to place the storage tray.
根据本申请的一实施例,所述置物盘具有多个置物槽,其中所述多个置物槽沿着所述置物盘的径向方向延伸,用于插放该LED半成品。According to an embodiment of the present application, the storage tray has a plurality of storage slots, wherein the plurality of storage slots extend along the radial direction of the storage tray, and are used for inserting the LED semi-finished product.
根据本申请的一实施例,所述置物盘包括栅格板和网格板,其中所述栅格板与所述网格板被间隔地叠置,以在所述栅格板和所述网格板之间形成多个所述置物槽。According to an embodiment of the present application, the storage tray includes a grid plate and a grid plate, wherein the grid plate and the grid plate are stacked at intervals, so that the grid plate and the mesh A plurality of storage slots are formed between the grid plates.
根据本申请的一实施例,该聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过该等离子体增强化学气相沉积法在该LED半成品的表面形成的膜层。According to an embodiment of the present application, the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers. One or more of the monomer groups are used as reaction raw materials, and the film layer is formed on the surface of the LED semi-finished product by the plasma enhanced chemical vapor deposition method.
根据本申请的一实施例,所述的防护式LED封装系统,进一步包括切割设备,其中所述切割设备用于将该防护式LED半成品切割成单颗,以获得防护式LED成品。According to an embodiment of the present application, the protective LED packaging system further includes a cutting device, wherein the cutting device is used to cut the semi-finished protective LED into individual pieces to obtain finished protective LED products.
通过对随后的描述的理解,本发明进一步的目的和优势将得以充分体现。Further objects and advantages of the invention will fully appear from an understanding of the ensuing description.
本发明的这些和其它目的、特点和优势,通过下述的详细说明和权利要求得以充分体现。These and other objects, features and advantages of the present invention are fully realized by the following detailed description and claims.
附图说明Description of drawings
图1是根据本申请的一实施例的防护式LED封装方法的流程示意图。FIG. 1 is a schematic flowchart of a protective LED packaging method according to an embodiment of the present application.
图2示出了根据本申请的上述实施例的所述防护式LED封装方法中步骤 之一的流程示意图。Fig. 2 shows a schematic flow chart of one of the steps in the protective LED packaging method according to the above-mentioned embodiment of the present application.
图3示出了根据本申请的上述实施例的所述防护式LED封装方法中步骤之二的流程示意图。Fig. 3 shows a schematic flowchart of step 2 in the protective LED packaging method according to the above-mentioned embodiment of the present application.
图4示出了通过根据本申请的上述实施例的所述防护式LED封装方法封装而成的防护式LED成品的结构示意图。Fig. 4 shows a schematic structural view of a finished protective LED packaged by the protective LED packaging method according to the above-mentioned embodiments of the present application.
图5示出了根据本申请的上述实施例的所述防护式LED封装方法的第一变形实施方式。Fig. 5 shows a first modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application.
图6示出了通过根据本申请的上述第一变形实施方式的所述防护式LED封装方法封装而成的防护式LED成品的结构示意图。Fig. 6 shows a schematic structural view of a finished protective LED packaged by the protective LED packaging method according to the above-mentioned first modified embodiment of the present application.
图7示出了根据本申请的上述实施例的所述防护式LED封装方法的第二变形实施方式。Fig. 7 shows a second modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application.
图8示出了通过根据本申请的上述第二变形实施方式的所述防护式LED封装方法封装而成的防护式LED成品的结构示意图。Fig. 8 shows a schematic structural view of a finished protective LED packaged by the protective LED packaging method according to the above-mentioned second modified embodiment of the present application.
图9是根据本申请的一实施例的防护式LED封装系统的框图示意图。FIG. 9 is a schematic block diagram of a protective LED packaging system according to an embodiment of the present application.
图10示出了根据本申请的上述实施例的所述防护式LED封装系统中镀膜设备的结构示意图。Fig. 10 shows a schematic structural view of the coating equipment in the protective LED packaging system according to the above-mentioned embodiments of the present application.
图11示出了根据本申请的上述实施例的所述镀膜设备中置物盘的结构示意图。Fig. 11 shows a schematic structural view of the storage tray in the coating device according to the above-mentioned embodiment of the present application.
图12示出了通过根据本申请的镀膜后的LED基材与未处理的LED基材和表面喷涂的LED基材的测试结果对比示意图。Fig. 12 is a schematic diagram showing the comparison of the test results of the coated LED substrate according to the present application, the untreated LED substrate and the LED substrate sprayed on the surface.
图13A示出了镀膜200nm前后的LED灯珠的光衰数据的表格示意图。Fig. 13A is a schematic table showing the light attenuation data of LED lamp beads before and after the coating of 200nm.
图13B示出了镀膜800nm前后的LED灯珠的光衰数据的表格示意图。FIG. 13B is a schematic table showing the light attenuation data of the LED lamp bead before and after coating of 800nm.
图14A示出了未镀膜的硬胶落料式LED灯珠的硫化衰减数据的表格示意图。FIG. 14A shows a schematic table of vulcanization decay data of uncoated hard rubber blanking type LED lamp beads.
图14B示出了镀膜200nm后的硬胶落料式LED灯珠的硫化衰减数据的表格示意图。FIG. 14B is a schematic table showing the vulcanization attenuation data of the hard rubber blanking type LED lamp bead after coating with 200nm.
图14C示出了镀膜800nm前后的硬胶落料式LED灯珠的硫化衰减数据的表格示意图。FIG. 14C is a schematic table showing the vulcanization attenuation data of hard rubber blanking LED lamp beads before and after coating with a film thickness of 800 nm.
图15A示出了未镀膜的硬胶切割式LED灯珠的硫化衰减数据的表格示意 图。Fig. 15A shows a table schematic diagram of vulcanization decay data of uncoated hard rubber cut LED lamp beads.
图15B示出了镀膜200nm后的硬胶切割式LED灯珠的硫化衰减数据的表格示意图。FIG. 15B is a schematic table showing the vulcanization attenuation data of hard rubber cut LED lamp beads after coating with 200nm.
图15C示出了镀膜800nm前后的硬胶切割式LED灯珠的硫化衰减数据的表格示意图。FIG. 15C is a schematic table showing the vulcanization attenuation data of the hard rubber cut LED lamp bead before and after coating with a film thickness of 800 nm.
图16示出了镀膜200nm后的软胶切割式LED灯珠的硫化衰减数据的表格示意图。Fig. 16 shows a table schematic diagram of the vulcanization attenuation data of the soft rubber-cut LED lamp bead after coating 200nm.
具体实施方式Detailed ways
以下描述用于揭露本发明以使本领域技术人员能够实现本发明。以下描述中的优选实施例只作为举例,本领域技术人员可以想到其他显而易见的变型。在以下描述中界定的本发明的基本原理可以应用于其他实施方案、变形方案、改进方案、等同方案以及没有背离本发明的精神和范围的其他技术方案。The following description serves to disclose the present invention to enable those skilled in the art to carry out the present invention. The preferred embodiments described below are only examples, and those skilled in the art can devise other obvious variations. The basic principles of the present invention defined in the following description can be applied to other embodiments, variations, improvements, equivalents and other technical solutions without departing from the spirit and scope of the present invention.
可以理解的是,术语“一”应理解为“至少一”或“一个或多个”,即在一个实施例中,一个元件的数量可以为一个,而在另外的实施例中,该元件的数量可以为多个,术语“一”不能理解为对数量的限制。It can be understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element The quantity can be multiple, and the term "a" cannot be understood as a limitation on the quantity.
在本发明中,权利要求和说明书中术语“一”应理解为“一个或多个”,即在一个实施例,一个元件的数量可以为一个,而在另外的实施例中,该元件的数量可以为多个。除非在本发明的揭露中明确示意该元件的数量只有一个,否则术语“一”并不能理解为唯一或单一,术语“一”不能理解为对数量的限制。In the present invention, the term "a" in the claims and the specification should be understood as "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element Can be multiple. Unless it is clearly indicated in the disclosure of the present invention that there is only one element, the term "a" cannot be understood as unique or single, and the term "a" cannot be understood as a limitation on the number.
在本发明的描述中,需要理解的是,属于“第一”、“第二”等仅用于描述目的,而不能理解为指示或者暗示相对重要性。本发明的描述中,需要说明的是,除非另有明确的规定和限定,属于“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接或者一体地连接;可以是机械连接,也可以是电连接;可以是直接连接,也可以是通过媒介间接连结。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。In the description of the present invention, it should be understood that belonging to "first", "second" and so on are only for descriptive purposes, and should not be understood as indicating or implying relative importance. In the description of the present invention, it should be noted that, unless otherwise specified and limited, "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection or an integral connection ; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through a medium. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention according to specific situations.
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that specific features described in connection with the embodiment or example , structure, material or characteristic is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples and features of different embodiments or examples described in this specification without conflicting with each other.
本发明提供了一种聚合物膜层及其制备方法和LED产品,其中所述聚合物膜层具有良好的密封性,这样当所述聚合物膜层被附着在一LED基材表面时,能够使得所述LED基材表面具有较好的防水、防硫、防氧性能。与此同时,所述聚合物膜层本身具有较好的透光性能,这使得所述聚合物膜层能够被应用于产品,并且不会对于产品的透光性能造成过多的影响。The invention provides a polymer film layer and its preparation method and LED products, wherein the polymer film layer has good sealing performance, so that when the polymer film layer is attached to the surface of an LED substrate, it can Therefore, the surface of the LED base material has better waterproof, sulfur-proof and oxygen-proof properties. At the same time, the polymer film layer itself has good light transmission performance, which enables the polymer film layer to be applied to products without too much impact on the light transmission performance of the product.
在本发明的一些实施例中,所述LED基材的类型可以但是并不限制于玻璃、金属、陶瓷、塑料、半导体或聚合物等材质。详细地说,所述LED基材可以但是并不限制于诸如LED显示屏或LED灯具等LED成品,还可以被实施为LED支架或发光元件等LED半成品。In some embodiments of the present invention, the type of the LED substrate can be, but is not limited to, materials such as glass, metal, ceramic, plastic, semiconductor or polymer. In detail, the LED base material can be, but not limited to, LED finished products such as LED display screens or LED lamps, and can also be implemented as LED semi-finished products such as LED brackets or light-emitting elements.
所述聚合物膜层可以被制备为具有较小的厚度,其厚度范围举例地但不限于10nm~20um。优选地,所述聚合物膜层的厚度被实施为10nm~10um。The polymer film layer can be prepared to have a small thickness, and its thickness range is for example but not limited to 10nm-20um. Preferably, the thickness of the polymer film layer is implemented to be 10nm˜10um.
具体地,根据本发明的一实施例,所述聚合物膜层通过等离子体增强化学气相沉积(PECVD)工艺形成于所述LED基材表面。也就是说,在制备过程中,所述LED基材表面被暴露于等离体子增强化学气相沉积反应装置的腔室中,在该腔室中形成等离子体,并且通过反应原料沉积反应形成所述聚合物膜层于所述LED基材的表面。Specifically, according to an embodiment of the present invention, the polymer film layer is formed on the surface of the LED substrate through a plasma enhanced chemical vapor deposition (PECVD) process. That is to say, during the preparation process, the surface of the LED substrate is exposed to the chamber of the plasma-enhanced chemical vapor deposition reaction device, a plasma is formed in the chamber, and the reaction raw material deposition reaction forms the The polymer film layer is on the surface of the LED substrate.
等离子体增强化学气相沉积(PECVD)工艺相较于现有的其它沉积工艺具有很多优点:(1)干式成膜不需要使用有机溶剂;(2)等离子体对LED基材表面的刻蚀作用,使所沉积上的薄膜与LED基材粘结性好;(3)可以对不规则LED基材表面均匀沉积镀膜,气相渗透性极强;(4)膜层可设计性好,相比于液相法微米级控制精度,化学气相法可在纳米级尺度进行涂层厚度的控制;(5)膜 层结构设计容易,化学气相法使用等离子体激活,对不同材料的复合涂层不需要设计特定的引发剂进行引发,通过输入能量的调控即可将多种原材料复合在一起;(6)致密性好,化学气相沉积法在等离子体引发过程中往往会对多个活性位点进行激活,类似于溶液反应中一个分子上有多个官能团,分子链之间通过多个官能团形成交联结构;(7)作为一种镀膜处理技术手段,其普适性极好,镀膜的对象、镀膜使用的原材料选择的范围都很广。Compared with other existing deposition processes, the plasma enhanced chemical vapor deposition (PECVD) process has many advantages: (1) dry film formation does not require the use of organic solvents; (2) the etching effect of plasma on the surface of the LED substrate , so that the deposited film has good adhesion to the LED substrate; (3) the coating can be uniformly deposited on the surface of the irregular LED substrate, and the gas phase permeability is extremely strong; (4) the film layer can be designed well, compared with The micron-level control accuracy of the liquid phase method, the chemical vapor phase method can control the coating thickness at the nanoscale scale; (5) The film structure design is easy, the chemical vapor phase method uses plasma activation, and does not need to be designed for composite coatings of different materials Specific initiators are used to initiate, and various raw materials can be combined through the regulation of input energy; (6) The compactness is good, and the chemical vapor deposition method often activates multiple active sites during the plasma initiation process. Similar to a solution reaction in which there are multiple functional groups on one molecule, a cross-linking structure is formed between the molecular chains through multiple functional groups; (7) As a coating treatment technology, it has excellent universality, and the coating object and coating use The selection of raw materials is very wide.
此外,所述等离子体增强化学气相沉积(PECVD)工艺可以通过辉光放电产生等离子体,放电的方法包括射频放电、微波放电、中频放电、高频放电、电火花放电,所述高频放电和中频放电的波形为正弦或双极脉冲。当然,所述等离子体增强化学气相沉积(PECVD)工艺中的放电类型可以是连续放电或脉冲放电。In addition, the plasma-enhanced chemical vapor deposition (PECVD) process can generate plasma through glow discharge, and the methods of discharge include radio frequency discharge, microwave discharge, intermediate frequency discharge, high frequency discharge, and electric spark discharge. The high frequency discharge and The waveform of intermediate frequency discharge is sinusoidal or bipolar pulse. Certainly, the discharge type in the plasma enhanced chemical vapor deposition (PECVD) process may be continuous discharge or pulse discharge.
根据本申请的上述实施例,所述聚合物膜层可以以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料通过等离子体增强化学气相沉积法在LED基材表面形成。According to the above embodiments of the present application, the polymer film layer may be composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers, and aromatic ring-containing organic monomers One or more of the monomer groups are used as reaction raw materials and formed on the surface of the LED substrate by plasma-enhanced chemical vapor deposition.
值得注意的是,所述丙烯酸酯类单体因具有容易被等离子体激活的双键而使得沉积速度加快。示例性地,所述丙烯酸酯类单体可以但不限于包括长链烷基丙烯酸酯类化合物和/或含氟丙烯酸酯类化合物。It is worth noting that the acrylate monomer has a double bond that is easily activated by plasma, so that the deposition speed is accelerated. Exemplarily, the acrylate monomer may include, but is not limited to, long-chain alkyl acrylate compounds and/or fluorine-containing acrylate compounds.
优选地,所述长链烷基丙烯酸酯类化合物中烷基的碳原子数一般大于等于6,如甲基丙烯酸正己酯、甲基丙烯酸正辛酯、甲基丙烯酸癸酯、甲基丙烯酸异癸酯、甲基丙烯酸十二酯、甲基丙烯酸十四酯、甲基丙烯酸十六酯、甲基丙烯酸十八酯、丙烯酸正己酯、丙烯酸正辛酯、丙烯酸癸酯、丙烯酸异癸酯、丙烯酸十二酯、丙烯酸十四酯、丙烯酸十六酯或丙烯酸十八酯等。Preferably, the number of carbon atoms of the alkyl group in the long-chain alkyl acrylate compounds is generally greater than or equal to 6, such as n-hexyl methacrylate, n-octyl methacrylate, decyl methacrylate, isodecyl methacrylate ester, lauryl methacrylate, tetradecyl methacrylate, cetyl methacrylate, octadecyl methacrylate, n-hexyl acrylate, n-octyl acrylate, decyl acrylate, isodecyl acrylate, decaacrylate Diester, tetradecyl acrylate, cetyl acrylate or octadecyl acrylate, etc.
所述含氟丙烯酸酯类化合物可以但不限于被实施为2-(全氟丁基)乙基丙烯酸酯、1H,1H,2H,2H-全氟癸基丙烯酸酯、1H,1H,2H,2H-全氟辛醇丙烯酸酯、(全氟环己基)甲基丙烯酸酯、1H,1H,2H,2H-全氟己基甲基丙烯酸酯、1H,1H,2H,2H-全氟辛基甲基丙烯酸酯或1H,1H,2H,2H-全氟癸基甲基丙烯酸酯等。The fluorine-containing acrylate compounds can be implemented as, but not limited to, 2-(perfluorobutyl)ethyl acrylate, 1H,1H,2H,2H-perfluorodecyl acrylate, 1H,1H,2H,2H - Perfluorooctyl Acrylate, (Perfluorocyclohexyl) Methacrylate, 1H,1H,2H,2H-Perfluorohexyl Methacrylate, 1H,1H,2H,2H-Perfluorooctyl Methacrylate ester or 1H,1H,2H,2H-perfluorodecyl methacrylate, etc.
所述含氟烯烃类单体可以但不限于包括四氟乙烯、六氟丙烯、八氟丁烯、全氟壬烯或1H,1H,2H-全氟-1-十二烯等。The fluorine-containing olefin monomer may include, but is not limited to, tetrafluoroethylene, hexafluoropropylene, octafluorobutene, perfluorononene, or 1H,1H,2H-perfluoro-1-dodecene and the like.
所述有机硅类单体可以但不限于包括乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷、1,2,2-三氟乙烯基三苯基硅烷、四甲氧基硅烷、三甲氧基氢硅烷、正辛基三乙氧基硅烷、苯基三乙氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、三乙基乙烯基硅烷、六乙基环三硅氧烷、3-(甲基丙烯酰氧)丙基三甲氧基硅烷、苯基三(三甲基硅氧烷基)硅烷、二苯基二乙氧基硅烷、十二烷基三甲氧基硅烷、二甲氧基硅烷或3-氯丙基三甲氧基硅烷等。The organosilicon-based monomers may include, but are not limited to, vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, methylvinyldiethyl Oxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoximinosilane, Tetramethyldivinyldisiloxane, Dimethylvinylethoxysilane , 1,2,2-trifluorovinyltriphenylsilane, tetramethoxysilane, trimethoxyhydrogensilane, n-octyltriethoxysilane, phenyltriethoxysilane, vinyl tri(2 -methoxyethoxy)silane, triethylvinylsilane, hexaethylcyclotrisiloxane, 3-(methacryloxy)propyltrimethoxysilane, phenyltris(trimethylsilane oxyalkyl)silane, diphenyldiethoxysilane, dodecyltrimethoxysilane, dimethoxysilane or 3-chloropropyltrimethoxysilane and the like.
所述环氧类单体可以但不限于包括3-缩水甘油醚氧基丙基三乙氧基硅烷或γ-缩水甘油醚氧丙基三甲氧基硅烷等。The epoxy monomer may include, but is not limited to, 3-glycidyloxypropyltriethoxysilane or γ-glycidyloxypropyltrimethoxysilane and the like.
值得注意的是,所述LED基材表面上可以被沉积一层所述聚合物膜层,也可以被沉积多层所述聚合物膜层。特别地,当所述LED基材表面上只沉积一层所述聚合物膜层时,所述聚合物膜层的静态水接触角可以达到100°以上。It should be noted that one layer of the polymer film layer or multiple layers of the polymer film layer may be deposited on the surface of the LED substrate. In particular, when only one layer of the polymer film layer is deposited on the surface of the LED substrate, the static water contact angle of the polymer film layer can reach more than 100°.
此外,制备所述聚合物膜层的所述反应原料是以单体蒸汽的方式被引入制备设备的反应腔室内。In addition, the reaction raw materials for preparing the polymer film layer are introduced into the reaction chamber of the preparation equipment in the form of monomer vapor.
示例性地,制备所述聚合物膜层的所述反应原料可以但不限于被实施为由至少一种含双键结构的有机硅类单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物。优选地,所述反应原料中所述多官能度不饱和烃及烃类衍生物所占的质量分数为10%~60%。Exemplarily, the reaction raw material for preparing the polymer film layer can be implemented, but not limited to, by at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon mixture of derivatives. Preferably, the mass fraction of the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives in the reaction raw materials is 10%-60%.
更优选地,所述含双键结构的有机硅类单体可以选自乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷以及1,2,2-三氟乙烯基三苯基硅烷中的一种或多种。More preferably, the organosilicon monomer containing a double bond structure can be selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane , Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoneximosilane, Tetramethyldivinyldisiloxane, Dimethicone One or more of vinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane.
所述多官能度不饱和烃及烃类衍生物可以选自异戊二烯、二丙烯酸乙二醇酯、1,3-丁二烯、1,4-戊二烯、乙氧基化三羟甲基丙烷三丙烯酸酯、二缩三丙二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、二乙二醇 二乙烯基醚、二丙烯酸新戊二醇酯、甲基丙烯酸1,4-丁二醇酯、二甲基丙烯酸1,6-己二醇酯、二甲基丙烯酸乙二醇酯、二甲基丙烯酸二乙二醇酯、二甲基丙烯酸三乙二醇酯、二甲基丙烯酸四乙二醇酯、二甲基丙烯酸1,3-丁二醇酯、二甲基丙烯酸新戊二醇酯、甲基丙烯酸酐、二丙-2-烯基2-亚甲基丁二酸酯、2-亚苄基丙二酸二丙-2-烯基酯以及二烯丙基丙二酸二乙酯中的一种或多种。The polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives can be selected from isoprene, ethylene glycol diacrylate, 1,3-butadiene, 1,4-pentadiene, ethoxylated trihydroxy Methylpropane Triacrylate, Tripropylene Glycol Diacrylate, Polyethylene Glycol Diacrylate, 1,6-Hexanediol Diacrylate, Diethylene Glycol Divinyl Ether, Neopentyl Glycol Diacrylate , 1,4-butylene glycol methacrylate, 1,6-hexanediol dimethacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, trimethacrylate Ethylene glycol ester, tetraethylene glycol dimethacrylate, 1,3-butylene glycol dimethacrylate, neopentyl glycol dimethacrylate, methacrylic anhydride, diprop-2-enyl One or more of 2-methylene succinate, diprop-2-enyl 2-benzylidene malonate, and diethyl diallyl malonate.
根据本申请的另一方面,本申请的一实施例提供了所述聚合物膜层的制备方法,可以包括步骤:According to another aspect of the present application, an embodiment of the present application provides a method for preparing the polymer film layer, which may include steps:
(1)前处理:在放置LED基材于PECVD装置的反应腔室以抽真空后,通入等离子源气体,且开启运动机构使得所述LED基材在所述反应腔室内运动;(1) Pre-treatment: After placing the LED base material in the reaction chamber of the PECVD device for vacuuming, the plasma source gas is introduced, and the movement mechanism is turned on so that the LED base material moves in the reaction chamber;
(2)沉积:在所述PECVD装置内以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种为反应原料,通过等离子体增强化学气相沉积法在所述LED基材表面形成所述聚合物膜层;以及(2) Deposition: In the PECVD device, a monomer group consisting of acrylate monomers, fluorine-containing olefin monomers, organosilicon monomers, epoxy monomers, and aromatic ring-containing organic monomers is used One or more of them are reaction raw materials, and the polymer film layer is formed on the surface of the LED substrate by plasma-enhanced chemical vapor deposition; and
(3)后处理:停止等离子体放电,停止抽真空后通入大气至一个大气压,停止所述LED基材运动,然后取出形成有所述聚合物膜层的所述LED基材。(3) Post-processing: stop the plasma discharge, stop the vacuuming, and ventilate the atmosphere to an atmospheric pressure, stop the movement of the LED base material, and then take out the LED base material formed with the polymer film layer.
可以理解的是,所述等离子源气体可以是惰性气体,也可以是氮气或氧气等。所述等离子源气体可以是单一气体或者是上述单一气体的混合气体,比如说惰性气体中He和Ar的混合气体。It can be understood that the plasma source gas may be an inert gas, nitrogen or oxygen, or the like. The plasma source gas may be a single gas or a mixed gas of the above single gas, such as a mixed gas of He and Ar in an inert gas.
值得一提的是,所述聚合物膜层能够被大批量制备,并且制备的步骤简单,方法,制备获得的所述聚合物膜层具有长效的防水、防硫和防氧性能,适于工业化的应用。It is worth mentioning that the polymer film layer can be prepared in large quantities, and the preparation steps are simple. The method, the prepared polymer film layer has long-term waterproof, sulfur-proof and oxygen-proof properties, suitable for industrial applications.
根据本发明的上述实施例,在所述聚合物膜层的整体制备方法的所述步骤(1)中:对所述反应腔室连续抽真空,以将所述反应腔室内的真空度抽到10~5000毫托。According to the above-mentioned embodiments of the present invention, in the step (1) of the overall preparation method of the polymer film layer: the reaction chamber is continuously evacuated, so that the vacuum degree in the reaction chamber is evacuated to 10-5000 mTorr.
优选地,当所述反应腔室内的真空度达到10~200毫托时,开始通入惰性气体,例如He、Ar或其混合气体,并开启所述运动机构,使得所述LED基材在所述反应腔室内产生运动。Preferably, when the vacuum degree in the reaction chamber reaches 10-200 mTorr, an inert gas, such as He, Ar or a mixed gas thereof, is started to be introduced, and the movement mechanism is turned on, so that the LED substrate is Motion is generated within the reaction chamber.
更优选地,所述PECVD装置的所述反应腔室被实施为旋转体形腔室或者 立方体形腔室,其容积为50~1000L,反应腔室的温度控制在25~60℃,所述惰性气体通入流量为5~300sccm。例如,所述反应腔室的容积为100L,所述反应腔室的温度控制在30℃,通入所述惰性气体的流量为15sccm。More preferably, the reaction chamber of the PECVD device is implemented as a rotating body-shaped chamber or a cube-shaped chamber with a volume of 50-1000 L, and the temperature of the reaction chamber is controlled at 25-60°C. The inert gas The flow rate is 5-300 sccm. For example, the volume of the reaction chamber is 100 L, the temperature of the reaction chamber is controlled at 30° C., and the flow rate of the inert gas is 15 sccm.
值得注意的是,所述步骤(1)中所述LED基材在所述反应腔室内的运动形式可以为所述LED基材相对所述反应腔室进行直线往复运动或曲线运动,其中所述曲线运动可以包括圆周运动、椭圆周运动、行星运动、球面运动或其他不规则路线的曲线运动。例如,当所述LED基材相对于所述反应腔室进行圆周运动时,所述LED基材的转速可以但不限于被实施为1~10转/min。It is worth noting that, in the step (1), the movement form of the LED base material in the reaction chamber can be that the LED base material performs linear reciprocating motion or curvilinear motion relative to the reaction chamber, wherein the The curved motion may include circular motion, elliptical circular motion, planetary motion, spherical motion or other irregularly routed curved motion. For example, when the LED base material performs circular motion relative to the reaction chamber, the rotational speed of the LED base material can be implemented as, but not limited to, 1˜10 revolutions/min.
此外,所述LED基材可以但不限于被实施为诸如LED显示屏或LED灯具等LED成品。当然,在本申请的其他示例中,所述LED基材也可以被实施为LED支架或封装前的LED半成品等等。In addition, the LED base material can be implemented, but not limited to, as finished LED products such as LED display screens or LED lamps. Of course, in other examples of the present application, the LED base material can also be implemented as an LED bracket or an LED semi-finished product before packaging, and the like.
根据本发明的上述实施例,在所述聚合物膜层的制备方法的所述步骤(2)中:通入单体蒸汽到所述反应腔室内,至真空度为30~300毫托,开启等离子体放电,进行化学气相沉积,以在所述基体表面形成所述聚合物膜层。例如,当所述反应腔室内的真空度达到50~200毫托时,开启等离子体放电以进行化学气相沉积。According to the above-mentioned embodiment of the present invention, in the step (2) of the preparation method of the polymer film layer: feed monomer vapor into the reaction chamber until the vacuum degree is 30-300 mTorr, open Plasma discharge and chemical vapor deposition are performed to form the polymer film on the surface of the substrate. For example, when the vacuum degree in the reaction chamber reaches 50-200 mTorr, the plasma discharge is turned on to perform chemical vapor deposition.
值得注意的是,所述单体蒸汽的成分可以包括丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体中的一种或多种单体。It is worth noting that the composition of the monomer vapor may include one of acrylate monomers, fluorine-containing olefin monomers, organosilicon monomers, epoxy monomers, and aromatic ring-containing organic monomers or multiple monomers.
优选地,所述单体蒸汽的成分被实施为由至少一种含双键结构的有机硅单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,其中所述单体蒸汽中的所述多官能度不饱和烃及烃类衍生物所占的质量分数为10%~60%。Preferably, the composition of the monomer vapor is implemented as a mixture of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, wherein the monomer The mass fraction of the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives in the steam is 10%-60%.
此外,在所述步骤(2)中:当开启等离子体放电以进行化学气相沉积时,沉积过程中的等离子体放电过程为小功率连续放电,具体包括以下沉积过程至少一次:其中所述沉积过程包括预处理阶段和镀膜阶段,首先预处理阶段时的等离子体放电功率为100~600W,持续放电时间60~1800s,然后,进入 镀膜阶段时,调整所述等离子体放电功率为10~200W,持续放电时间600~36000s。In addition, in the step (2): when the plasma discharge is turned on for chemical vapor deposition, the plasma discharge process during the deposition process is a low-power continuous discharge, which specifically includes the following deposition process at least once: wherein the deposition process Including the pretreatment stage and the coating stage, firstly, the plasma discharge power in the pretreatment stage is 100-600W, and the continuous discharge time is 60-1800s. Then, when entering the coating stage, adjust the plasma discharge power to 10-200W, and last The discharge time is 600~36000s.
优选地,在预处理阶段时,所述等离子体放电功率为150W,持续放电时间600s;而在镀膜阶段时,调整所述等离子体放电功率为60W,持续放电时间800s。Preferably, in the pretreatment stage, the plasma discharge power is 150W, and the discharge time is 600s; and in the coating stage, the plasma discharge power is adjusted to 60W, and the discharge time is 800s.
可选的,在本发明的一些实施例中,在所述步骤(2)中:当开启等离子体放电以进行化学气相沉积时,沉积过程中的等离子体放电过程为脉冲放电,具体包括以下沉积过程至少一次:该聚合物膜层的形成过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为150~600W,持续放电时间60~1800s,然后进入镀膜阶段,镀膜阶段为脉冲放电,功率10~300W,时间600s~36000s,脉冲放电的频率为20Hz-20KHz,脉冲的占空比为1:1~1:500。Optionally, in some embodiments of the present invention, in the step (2): when the plasma discharge is turned on for chemical vapor deposition, the plasma discharge process in the deposition process is a pulse discharge, specifically including the following deposition Process at least once: The formation process of the polymer film layer includes a pretreatment stage and a coating stage. The plasma discharge power in the pretreatment stage is 150-600W, and the continuous discharge time is 60-1800s, and then enters the coating stage. The coating stage is pulse discharge. The power is 10~300W, the time is 600s~36000s, the frequency of pulse discharge is 20Hz-20KHz, and the duty ratio of pulse is 1:1~1:500.
进一步地,在所述步骤(2)中:将单体通过加料泵进行雾化、挥发以形成所述单体蒸汽,并由100~300毫托的低压引入所述反应腔室,其中所述单体蒸汽的通入流量可以是10~1000μL/min。例如,所述单体蒸汽的通入流量可以是500uL/min。Further, in the step (2): the monomer is atomized and volatilized by the feed pump to form the monomer vapor, and introduced into the reaction chamber at a low pressure of 100-300 mTorr, wherein the The flow rate of the monomer steam can be 10-1000 μL/min. For example, the flow rate of the monomer vapor can be 500 uL/min.
优选地,在所述步骤(2)中所述等离子体的放电方式被实施为射频放电。Preferably, in the step (2), the plasma discharge method is implemented as radio frequency discharge.
更优选地,所述聚合物膜层的总厚度为10nm-10μm。More preferably, the total thickness of the polymer film layer is 10 nm-10 μm.
根据本申请的上述实施例,在所述聚合物膜层的制备方法的所述步骤(3)中:在停止通入所述单体蒸汽的同时,停止等离子体放电,并持续抽真空以保持所述反应腔室的真空度为10~200毫托;接着在1~5min后通入大气至一个大气压,停止所述LED基材的运动,然后取出所述LED基材即可。当然,在本申请的其他示例中,停止等离子体放电,向所述反应腔室内充入空气或惰性气体至压力2000-5000毫托,然后抽真空至10-200毫托,进行上述充气和抽真空步骤至少一次,通入空气至一个大气压,停止LED基材的运动,然后取出LED基材即可。According to the above-mentioned embodiments of the present application, in the step (3) of the preparation method of the polymer film layer: while stopping the introduction of the monomer vapor, stop the plasma discharge, and continue vacuuming to maintain The vacuum degree of the reaction chamber is 10-200 mTorr; then after 1-5 minutes, the atmosphere is vented to an atmospheric pressure, the movement of the LED base material is stopped, and then the LED base material is taken out. Of course, in other examples of the present application, the plasma discharge is stopped, and the reaction chamber is filled with air or an inert gas to a pressure of 2000-5000 millitorr, and then vacuumed to 10-200 millitorr to carry out the above-mentioned inflation and pumping. The vacuum step is at least once, the air is introduced to an atmospheric pressure, the movement of the LED base material is stopped, and then the LED base material is taken out.
值得注意的是,所述聚合物膜层能够被形成于LED基材(如LED灯珠或LED显示屏等)的表面,以形成具有聚合物膜层的LED产品,有助于改善所 述LED产品的防水、防硫和防氧性能。具体地,所述具有聚合物膜层的LED产品可以通过将该LED基材暴露在以所述单体蒸汽作为反应原料的环境中,以通过等离子体增强化学气相沉积法在基材表面的至少一部分形成所述聚合物膜层制备而成,其中所述单体蒸汽可以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种。It is worth noting that the polymer film layer can be formed on the surface of the LED substrate (such as LED lamp beads or LED display screens, etc.) to form an LED product with a polymer film layer, which helps to improve the performance of the LED. Waterproof, sulfur-proof and oxygen-proof performance of the product. Specifically, the LED product with a polymer film layer can expose the LED substrate to an environment in which the monomer vapor is used as a reaction raw material, so that at least A part of the polymer film layer is formed, wherein the monomer vapor can be composed of acrylate monomers, fluorine-containing olefin monomers, organosilicon monomers, epoxy monomers, and organic compounds containing aromatic rings One or more of the group of monomers composed of monomers.
优选地,所述LED基材为LED成品或LED半成品。Preferably, the LED base material is a finished LED product or a semi-finished LED product.
目前,虽然现有的LED灯通常采用高分子有机硅作为封装胶以延长使用寿命,但是硅胶本身以及硅胶与支架密封不佳等原因,仍存在透湿、透氧、透硫、透溴等缺点。事实上,大部分LED灯的支架通常是由金属基体构成的,并在基体上镀上银层作为LED灯的光源反射层。而LED灯在实际使用场景中,如空气、湿气、雨天等中的硫(S)、水(H2O)或氧(O2)等会与镀银层发生反应。特别是空气中的S与Ag发生反应会形成Ag2S而导致镀银层发黑、灯珠变暗,进而造成严重的光衰现象。当然,空气中的水分或氧气等进入LED灯内部后也容易与金属发生复杂的化学反应,导致LED灯的光通量严重下降,色温出现明显漂移,甚至出现死灯的现象。为了解决上述问题,本申请提供了一种防护式LED封装方法和防护式LED灯珠,其能够制备出具备防硫、防水或防氧等性能的LED灯具,以便解决LED灯容易发生硫化、进水或透氧等存在的行业痛点。At present, although the existing LED lights usually use polymer silicone as the encapsulant to prolong the service life, the silica gel itself and the poor sealing between the silica gel and the bracket still have disadvantages such as moisture permeability, oxygen permeability, sulfur permeability, and bromine permeability. . In fact, the brackets of most LED lamps are usually made of a metal base, and a silver layer is plated on the base as the light source reflection layer of the LED lamp. However, in actual use scenarios of LED lights, such as sulfur (S), water (H2O) or oxygen (O2) in air, humidity, rainy days, etc., will react with the silver plating layer. In particular, the reaction between S in the air and Ag will form Ag2S, which will lead to blackening of the silver plating layer and darkening of the lamp beads, which will cause serious light decay. Of course, when moisture or oxygen in the air enters the interior of the LED lamp, it is also prone to complex chemical reactions with the metal, resulting in a serious decrease in the luminous flux of the LED lamp, a significant drift in the color temperature, and even a dead light. In order to solve the above problems, this application provides a protective LED packaging method and protective LED lamp beads, which can prepare LED lamps with properties such as sulfur resistance, water resistance, or oxygen resistance, so as to solve the problem that LED lamps are prone to vulcanization, further damage Industry pain points such as water or oxygen permeability.
参考本申请的说明书附图之图1至图4,根据本申请的一实施例的防护式LED封装方法被阐明。具体地,如图1所示,所述防护式LED封装方法,可以包括步骤:Referring to FIG. 1 to FIG. 4 of the accompanying drawings of the present application, a protective LED packaging method according to an embodiment of the present application is illustrated. Specifically, as shown in Figure 1, the protective LED packaging method may include steps:
S110:将发光元件可导通地固定于LED支架;S110: Conductively fixing the light-emitting element to the LED bracket;
S120:点胶于所述发光元件和所述LED支架以形成封装胶层,以制成LED半成品;以及S120: dispensing glue on the light-emitting element and the LED bracket to form an encapsulation glue layer, so as to make a semi-finished LED product; and
S130:通过等离子体增强化学气相沉积法,在所述LED半成品的表面沉积形成聚合物膜层,以制成防护式LED半成品。S130: Deposit and form a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to manufacture a protective LED semi-finished product.
值得注意的是,由于所述聚合物膜层具有良好的密封性,因此当所述聚合物膜层被附着在所述LED半成品的表面时,所述LED半成品的表面就能够具有较好的防水、防硫、防氧性能。与此同时,所述聚合物膜层本身具有较好的透光性能,这使得所述聚合物膜层在提供诸如防水、防硫、防氧等防护功能的同时,并不会影响所述LED半成品的表面透光性能。It is worth noting that since the polymer film layer has good sealing performance, when the polymer film layer is attached to the surface of the LED semi-finished product, the surface of the LED semi-finished product can have better waterproof , Anti-sulfur, anti-oxidation properties. At the same time, the polymer film layer itself has better light transmission performance, which makes the polymer film layer provide protective functions such as waterproof, sulfur-proof, oxygen-proof, etc., without affecting the performance of the LED. Surface light transmission properties of semi-finished products.
可以理解的是,等离子体增强化学气相沉积(PECVD)工艺相较于现有的其它沉积工艺具有很多优点:(1)干式成膜不需要使用有机溶剂;(2)等离子体对基材表面的刻蚀作用,使所沉积上的薄膜与基材粘结性好;(3)可以对不规则基材表面均匀沉积镀膜,气相渗透性极强;(4)膜层可设计性好,相比于液相法微米级控制精度,化学气相法可在纳米级尺度进行涂层厚度的控制;(5)膜层结构设计容易,化学气相法使用等离子体激活,对不同材料的复合涂层不需要设计特定的引发剂进行引发,通过输入能量的调控即可将多种原材料复合在一起;(6)致密性好,化学气相沉积法在等离子体引发过程中往往会对多个活性位点进行激活,类似于溶液反应中一个分子上有多个官能团,分子链之间通过多个官能团形成交联结构;(7)其作为一种镀膜处理技术手段,其普适性极好,镀膜的对象、镀膜使用的原材料选择的范围都很广。It can be understood that the plasma-enhanced chemical vapor deposition (PECVD) process has many advantages compared with other existing deposition processes: (1) dry film formation does not require the use of organic solvents; The etching effect makes the deposited film and the substrate have good adhesion; (3) the coating can be uniformly deposited on the surface of the irregular substrate, and the gas phase permeability is extremely strong; (4) the film layer can be designed well, and the phase Compared with the micron-level control accuracy of the liquid-phase method, the chemical vapor-phase method can control the coating thickness at the nano-scale; (5) The film structure is easy to design, and the chemical vapor-phase method uses plasma activation, which is not suitable for composite coatings of different materials. It is necessary to design a specific initiator for initiation, and a variety of raw materials can be compounded together through the regulation of input energy; (6) The compactness is good, and the chemical vapor deposition method often destroys multiple active sites during the plasma initiation process. Activation, similar to the solution reaction in which there are multiple functional groups on a molecule, the cross-linking structure is formed between the molecular chains through multiple functional groups; (7) As a coating treatment technology, it has excellent universality, and the coating object , The range of raw materials used for coating is very wide.
此外,所述等离子体增强化学气相沉积(PECVD)工艺可以通过辉光放电产生等离子体,放电的方法包括射频放电、微波放电、中频放电、高频放电、电火花放电,所述高频放电和中频放电的波形为正弦或双极脉冲。当然,所述等离子体增强化学气相沉积(PECVD)工艺中的放电类型可以是连续放电或脉冲放电。In addition, the plasma-enhanced chemical vapor deposition (PECVD) process can generate plasma through glow discharge, and the methods of discharge include radio frequency discharge, microwave discharge, intermediate frequency discharge, high frequency discharge, and electric spark discharge. The high frequency discharge and The waveform of intermediate frequency discharge is sinusoidal or bipolar pulse. Certainly, the discharge type in the plasma enhanced chemical vapor deposition (PECVD) process may be continuous discharge or pulse discharge.
更具体地,在本申请的上述实施例的所述防护式LED封装方法的所述步骤S130中,所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过所述等离子体增强化学气相沉积法在所述LED半成品的表面形成的膜层。More specifically, in the step S130 of the protective LED encapsulation method in the above embodiment of the present application, the polymer film layer is made of acrylate monomer, fluorine-containing olefin monomer, silicone One or more of the monomer group composed of monomers, epoxy monomers and aromatic ring-containing organic monomers are used as reaction raw materials, and are deposited on the surface of the LED semi-finished product by the plasma-enhanced chemical vapor deposition method. formed film layer.
优选地,所述聚合物膜层可以被制备为具有较小的厚度,其厚度范围举 例地但不限于10nm~20um。更优选地,所述聚合物膜层的厚度被实施为10nm~10um。值得注意的是,所述LED半成品的表面上可以被沉积一层所述聚合物膜层,也可以被沉积多层所述聚合物膜层。特别地,当所述LED半成品的表面上只沉积一层所述聚合物膜层时,所述聚合物膜层的疏水角可以达到100°以上。Preferably, the polymer film layer can be prepared to have a small thickness, and its thickness range is for example but not limited to 10nm-20um. More preferably, the thickness of the polymer film layer is implemented to be 10nm-10um. It should be noted that one layer of the polymer film layer or multiple layers of the polymer film layer may be deposited on the surface of the LED semi-finished product. Especially, when only one layer of the polymer film layer is deposited on the surface of the LED semi-finished product, the hydrophobic angle of the polymer film layer can reach more than 100°.
示例性地,所述丙烯酸酯类单体可以但不限于包括丙烯酸酯及其衍生物、长链烷基丙烯酸酯类化合物或含氟丙烯酸酯类化合物。Exemplarily, the acrylate monomer may include, but is not limited to, acrylate and its derivatives, long-chain alkyl acrylate compounds, or fluorine-containing acrylate compounds.
优选地,所述长链烷基丙烯酸酯类化合物中烷基的碳原子数一般大于等于6,如甲基丙烯酸正己酯、甲基丙烯酸正辛酯、甲基丙烯酸癸酯、甲基丙烯酸异癸酯、甲基丙烯酸十二酯、甲基丙烯酸十四酯、甲基丙烯酸十六酯、甲基丙烯酸十八酯、丙烯酸正己酯、丙烯酸正辛酯、丙烯酸癸酯、丙烯酸异癸酯、丙烯酸十二酯、丙烯酸十四酯、丙烯酸十六酯和/或丙烯酸十八酯等。Preferably, the number of carbon atoms of the alkyl group in the long-chain alkyl acrylate compounds is generally greater than or equal to 6, such as n-hexyl methacrylate, n-octyl methacrylate, decyl methacrylate, isodecyl methacrylate ester, lauryl methacrylate, tetradecyl methacrylate, cetyl methacrylate, octadecyl methacrylate, n-hexyl acrylate, n-octyl acrylate, decyl acrylate, isodecyl acrylate, decaacrylate Diesters, myristyl acrylate, cetyl acrylate and/or octadecyl acrylate, etc.
所述含氟丙烯酸酯类化合物可以但不限于被实施为2-(全氟丁基)乙基丙烯酸酯、1H,1H,2H,2H-全氟癸基丙烯酸酯、1H,1H,2H,2H-全氟辛醇丙烯酸酯、(全氟环己基)甲基丙烯酸酯、1H,1H,2H,2H-全氟己基甲基丙烯酸酯、1H,1H,2H,2H-全氟辛基甲基丙烯酸酯和/或1H,1H,2H,2H-全氟癸基甲基丙烯酸酯。The fluorine-containing acrylate compounds can be implemented as, but not limited to, 2-(perfluorobutyl)ethyl acrylate, 1H,1H,2H,2H-perfluorodecyl acrylate, 1H,1H,2H,2H - Perfluorooctyl Acrylate, (Perfluorocyclohexyl) Methacrylate, 1H,1H,2H,2H-Perfluorohexyl Methacrylate, 1H,1H,2H,2H-Perfluorooctyl Methacrylate esters and/or 1H,1H,2H,2H-perfluorodecyl methacrylate.
所述含氟烯烃类单体可以但不限于包括四氟乙烯、六氟丙烯、八氟丁烯、全氟壬烯和/或1H,1H,2H-全氟-1-十二烯。The fluorine-containing olefin monomer may include, but is not limited to, tetrafluoroethylene, hexafluoropropylene, octafluorobutene, perfluorononene and/or 1H,1H,2H-perfluoro-1-dodecene.
所述有机硅类单体可以但不限于包括乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷、1,2,2-三氟乙烯基三苯基硅烷、四甲氧基硅烷、三甲氧基氢硅烷、正辛基三乙氧基硅烷、苯基三乙氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、三乙基乙烯基硅烷、六乙基环三硅氧烷、3-(甲基丙烯酰氧)丙基三甲氧基硅烷、苯基三(三甲基硅氧烷基)硅烷、二苯基二乙氧基硅烷、十二烷基三甲氧基硅烷、二甲氧基硅烷和/或3-氯丙基 三甲氧基硅烷等。The organosilicon-based monomers may include, but are not limited to, vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, methylvinyldiethyl Oxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoximinosilane, Tetramethyldivinyldisiloxane, Dimethylvinylethoxysilane , 1,2,2-trifluorovinyltriphenylsilane, tetramethoxysilane, trimethoxyhydrogensilane, n-octyltriethoxysilane, phenyltriethoxysilane, vinyl tri(2 -methoxyethoxy)silane, triethylvinylsilane, hexaethylcyclotrisiloxane, 3-(methacryloxy)propyltrimethoxysilane, phenyltris(trimethylsilane oxyalkyl)silane, diphenyldiethoxysilane, dodecyltrimethoxysilane, dimethoxysilane and/or 3-chloropropyltrimethoxysilane and the like.
所述环氧类单体可以但不限于包括3-缩水甘油醚氧基丙基三乙氧基硅烷和/或γ-缩水甘油醚氧丙基三甲氧基硅烷。The epoxy monomer may include, but is not limited to, 3-glycidoxypropyltriethoxysilane and/or γ-glycidoxypropyltrimethoxysilane.
值得注意的是,所述LED支架可以但不限于被实施为EMC支架,其中所述EMC(英文Epoxy Molding Compound)支架是采用新的环氧树脂材料和蚀刻技术在模制设备的封装下的一种高度集成化的框架形式。当然,在本申请的其他示例中,所述LED支架还可以被实施为其他类型的支架,本申请对此不再赘述。It is worth noting that the LED bracket can be implemented as an EMC bracket, but not limited to, wherein the EMC (Epoxy Molding Compound in English) bracket is a new epoxy resin material and etching technology under the package of the molding device. A highly integrated framework form. Of course, in other examples of the present application, the LED bracket can also be implemented as other types of brackets, which will not be described in detail in this application.
在本申请的一示例中,所述EMC支架是一种整片支架,这样当需要获得单颗LED灯珠时,就需要对所述EMC支架进行切割处理。In an example of the present application, the EMC bracket is a whole piece of bracket, so when a single LED lamp bead needs to be obtained, the EMC bracket needs to be cut.
示例性地,如图1所示,所述防护式LED封装方法,可以进一步包括步骤:Exemplarily, as shown in Figure 1, the protective LED packaging method may further include the steps of:
S140:将所述防护式LED半成品切割成单颗,以获得防护式LED成品。S140: Cut the semi-finished protective LED into single pieces to obtain finished protective LED.
如图4所示,所述防护式LED成品50包括LED支架51、发光元件52、封装胶层53以及聚合物膜层54,其中所述发光元件52被可导通地固定于所述LED支架51的镀银表面510,并且所述封装胶层53包覆地封装所述发光元件52,其中所述聚合物膜层54被镀于所述封装胶层53的外表面。As shown in Figure 4, the protective LED finished product 50 includes an LED bracket 51, a light emitting element 52, an encapsulation adhesive layer 53 and a polymer film layer 54, wherein the light emitting element 52 is conductively fixed to the LED bracket 51 of the silver-plated surface 510 , and the encapsulation adhesive layer 53 encapsulates the light-emitting element 52 , wherein the polymer film layer 54 is plated on the outer surface of the encapsulation adhesive layer 53 .
值得一提的是,如图2所示,所述防护式LED封装方法的所述步骤S130,可以包括步骤:It is worth mentioning that, as shown in FIG. 2, the step S130 of the protective LED packaging method may include the steps of:
S131:前处理:在放置所述LED半成品于镀膜设备的镀膜腔室以抽真空后,通入等离子源气体,且开启运动机构使得所述LED半成品在所述镀膜腔室内运动;S131: Pre-processing: After placing the LED semi-finished product in the coating chamber of the coating equipment for vacuuming, inject plasma source gas, and turn on the movement mechanism to make the LED semi-finished product move in the coating chamber;
S132:沉积:在所述镀膜设备内以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种为反应原料,通过等离子体增强化学气相沉积法在所述LED半成品的表面形成所述聚合物膜层;以及S132: Deposition: In the coating equipment, in the monomer group consisting of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers, and aromatic ring-containing organic monomers One or more of them are reaction raw materials, and the polymer film layer is formed on the surface of the LED semi-finished product by plasma-enhanced chemical vapor deposition; and
S133:后处理:停止等离子体放电,停止抽真空后通入大气至一个大气 压,停止所述LED半成品运动,然后取出形成有所述聚合物膜层的所述LED半成品。S133: post-processing: stop the plasma discharge, stop vacuuming and then ventilate the atmosphere to an atmospheric pressure, stop the movement of the LED semi-finished product, and then take out the LED semi-finished product formed with the polymer film layer.
可以理解的是,所述等离子源气体可以是惰性气体,也可以是氮气或氧气等。所述等离子源气体可以是单一气体或者是上述单一气体的混合气体,比如说惰性气体中He和Ar的混合气体。It can be understood that the plasma source gas may be an inert gas, nitrogen or oxygen, or the like. The plasma source gas may be a single gas or a mixed gas of the above single gas, such as a mixed gas of He and Ar in an inert gas.
根据本发明的上述实施例,在所述步骤S131中:对所述镀膜腔室连续抽真空,以将所述镀膜腔室内的真空度抽到10~5000毫托。According to the above-mentioned embodiment of the present invention, in the step S131 : continuously evacuate the coating chamber, so as to evacuate the vacuum degree in the coating chamber to 10-5000 mTorr.
优选地,当所述镀膜腔室内的真空度达到10~200毫托时,开始通入惰性气体,如He和/或Ar,并开启所述运动机构,使得所述LED半成品在所述镀膜腔室内产生运动。Preferably, when the vacuum in the coating chamber reaches 10-200 mTorr, an inert gas, such as He and/or Ar, is started to be introduced, and the movement mechanism is turned on, so that the LED semi-finished product is in the coating chamber Motion is generated indoors.
更优选地,所述镀膜设备的所述镀膜腔室被实施为旋转体形腔室或者立方体形腔室,其容积为50~1000L,镀膜腔室的温度控制在25~60℃,所述惰性气体通入流量为5~300sccm。例如,所述镀膜腔室的容积为100L,所述镀膜腔室的温度控制在30℃,通入所述惰性气体的流量为15sccm。More preferably, the coating chamber of the coating equipment is implemented as a rotating body-shaped chamber or a cube-shaped chamber with a volume of 50-1000L, the temperature of the coating chamber is controlled at 25-60°C, and the inert gas The flow rate is 5-300 sccm. For example, the volume of the coating chamber is 100 L, the temperature of the coating chamber is controlled at 30° C., and the flow rate of the inert gas is 15 sccm.
值得注意的是,所述步骤S131中所述LED半成品在所述镀膜腔室内的运动形式可以为所述LED半成品相对所述镀膜腔室进行直线往复运动或曲线运动,其中所述曲线运动可以包括圆周运动、椭圆周运动、行星运动、球面运动或其他不规则路线的曲线运动。例如,当所述LED半成品相对于所述镀膜腔室进行圆周运动时,所述LED半成品的转速可以但不限于被实施为1~10转/min。It is worth noting that, in the step S131, the movement form of the LED semi-finished product in the coating chamber may be that the LED semi-finished product performs a linear reciprocating motion or a curved motion relative to the coating chamber, wherein the curved motion may include Circular motion, elliptical circular motion, planetary motion, spherical motion or curve motion of other irregular routes. For example, when the LED semi-finished product performs circular motion relative to the coating chamber, the rotational speed of the LED semi-finished product may be, but not limited to, implemented as 1-10 revolutions/min.
根据本发明的上述实施例,在所述步骤S132中:通入单体蒸汽到所述镀膜腔室内,至真空度为30~300毫托,开启等离子体放电,进行化学气相沉积,以在所述LED半成品的表面形成所述聚合物膜层。例如,当所述镀膜腔室内的真空度达到50~200毫托时,开启等离子体放电以进行化学气相沉积。According to the above-mentioned embodiment of the present invention, in the step S132: feed the monomer vapor into the coating chamber until the vacuum degree is 30-300 mTorr, turn on the plasma discharge, and perform chemical vapor deposition in the coating chamber. The polymer film layer is formed on the surface of the LED semi-finished product. For example, when the vacuum in the coating chamber reaches 50-200 mTorr, the plasma discharge is turned on to perform chemical vapor deposition.
优选地,所述单体蒸汽的成分被实施为由至少一种含双键结构的有机硅单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,其中所述单体蒸汽中的所述多官能度不饱和烃及烃类衍生物所占的质量分数为 10%~60%。Preferably, the composition of the monomer vapor is implemented as a mixture of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, wherein the monomer The mass fraction of the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives in the steam is 10%-60%.
此外,在所述步骤S132中:当开启等离子体放电以进行化学气相沉积时,沉积过程中的等离子体放电过程为小功率连续放电,具体包括以下沉积过程至少一次:其中所述沉积过程包括预处理阶段和镀膜阶段,首先预处理阶段时的等离子体放电功率为100~600W,持续放电时间60~1800s,然后,进入镀膜阶段时,调整所述等离子体放电功率为10~200W,持续放电时间600~36000s。In addition, in the step S132: when the plasma discharge is turned on for chemical vapor deposition, the plasma discharge process during the deposition process is a low-power continuous discharge, which specifically includes the following deposition process at least once: wherein the deposition process includes pre- In the treatment stage and the coating stage, firstly, the plasma discharge power in the pretreatment stage is 100-600W, and the continuous discharge time is 60-1800s. Then, when entering the coating stage, adjust the plasma discharge power to 10-200W, and the continuous discharge time 600~36000s.
优选地,在预处理阶段时,所述等离子体放电功率为150W,持续放电时间600s;而在镀膜阶段时,调整所述等离子体放电功率为60W,持续放电时间800s。Preferably, in the pretreatment stage, the plasma discharge power is 150W, and the discharge time is 600s; and in the coating stage, the plasma discharge power is adjusted to 60W, and the discharge time is 800s.
可选的,在本发明的一些实施例中,在所述步骤S132中:当开启等离子体放电以进行化学气相沉积时,沉积过程中的等离子体放电过程为脉冲放电,具体包括以下沉积过程至少一次:该聚合物膜层的形成过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为150~600W,持续放电时间60~1800s,然后进入镀膜阶段,镀膜阶段为脉冲放电,功率10~300W,时间600s~36000s,脉冲放电的频率为20Hz-20KHz,脉冲的占空比为1:1~1:500。Optionally, in some embodiments of the present invention, in the step S132: when the plasma discharge is turned on for chemical vapor deposition, the plasma discharge process during the deposition process is a pulse discharge, specifically including the following deposition process at least One time: The formation process of the polymer film layer includes a pretreatment stage and a coating stage. The plasma discharge power in the pretreatment stage is 150-600W, and the continuous discharge time is 60-1800s, and then enters the coating stage. The coating stage is a pulse discharge with a power of 10 ~300W, time 600s~36000s, pulse discharge frequency 20Hz-20KHz, pulse duty ratio 1:1~1:500.
进一步地,在所述步骤S132中:将单体通过加料泵进行雾化、挥发以形成所述单体蒸汽,并由100~300毫托的低压引入所述镀膜腔室,其中所述单体蒸汽的通入流量可以是10~1000μL/min。例如,所述单体蒸汽的通入流量可以是500uL/min。Further, in the step S132: the monomer is atomized and volatilized by the feed pump to form the monomer vapor, and introduced into the coating chamber by a low pressure of 100-300 mTorr, wherein the monomer The flow rate of the steam can be 10-1000 μL/min. For example, the flow rate of the monomer vapor can be 500 uL/min.
优选地,在所述步骤S132中所述等离子体的放电方式被实施为射频放电。Preferably, in the step S132, the plasma discharge method is implemented as radio frequency discharge.
根据本申请的上述实施例,在所述步骤S133中:在停止通入所述单体蒸汽的同时,停止等离子体放电,并持续抽真空以保持所述镀膜腔室的真空度为10~200毫托;接着在1~5min后通入大气至一个大气压,停止所述LED半成品的运动,然后取出所述LED半成品即可。当然,在本申请的其他示例中,停止等离子体放电,向所述镀膜腔室内充入空气或惰性气体至压力2000-5000毫托,然后抽真空至10-200毫托,进行上述充气和抽真空步骤至 少一次,通入空气至一个大气压,停止所述LED半成品的运动,然后取出所述LED半成品即可。According to the above-mentioned embodiment of the present application, in the step S133: stop the plasma discharge while stopping the introduction of the monomer vapor, and continue vacuuming to keep the vacuum degree of the coating chamber at 10-200 millitorr; then after 1 to 5 minutes, the atmosphere is vented to an atmospheric pressure, the movement of the LED semi-finished product is stopped, and then the LED semi-finished product is taken out. Of course, in other examples of the present application, the plasma discharge is stopped, and the coating chamber is filled with air or an inert gas to a pressure of 2000-5000 millitorr, and then vacuumed to 10-200 millitorr to carry out the above-mentioned inflation and pumping. The vacuum step is at least once, the air is introduced to an atmospheric pressure, the movement of the LED semi-finished product is stopped, and then the LED semi-finished product is taken out.
值得注意的是,由于所述LED半成品的所述LED支架的正面通常用于固晶和点胶,而所述LED支架的背面则需裸露在外以便与电源进行电连接,和保证较好的散热性能,因此在对所述LED半成品进行镀膜之前,需要遮蔽所述LED半成品的背表面,以便只在所述LED半成品的正表面形成所述聚合物膜层。可以理解的是,所述LED半成品的正表面指的是对应于所述LED支架的正面的表面,以作为所述LED半成品的发光面,并且所述LED半成品的背表面指的是对应于所述LED支架的背面的表面,以作为所述LED半成品的背光面。It is worth noting that since the front side of the LED bracket of the LED semi-finished product is usually used for die bonding and dispensing, the back side of the LED bracket needs to be exposed to be electrically connected to the power supply and to ensure better heat dissipation Therefore, before coating the LED semi-finished product, it is necessary to shield the back surface of the LED semi-finished product so that the polymer film layer is only formed on the front surface of the LED semi-finished product. It can be understood that the front surface of the LED semi-finished product refers to the surface corresponding to the front surface of the LED bracket as the light-emitting surface of the LED semi-finished product, and the back surface of the LED semi-finished product refers to the surface corresponding to the LED bracket. The surface of the back of the LED bracket is used as the backlight surface of the LED semi-finished product.
具体地,所述防护式LED封装方法的所述步骤S130,可以进一步包括步骤:Specifically, the step S130 of the protective LED packaging method may further include the steps of:
在所述步骤S131之前,对所述LED半成品的背表面进行遮蔽处理;和Before the step S131, performing shielding treatment on the back surface of the LED semi-finished product; and
在所述步骤S133之后,对所述防护式LED半成品的背表面进行去遮蔽处理。After the step S133, de-shielding treatment is performed on the back surface of the protective LED semi-finished product.
优选地,本申请可以通过将遮蔽膜粘接于所述LED半成品的背表面的方式对所述LED半成品的背表面进行遮蔽处理。当然,在本申请的其他示例中,本申请也可以通过其他类型的遮蔽治具对所述LED半成品的背表面进行遮蔽处理。Preferably, the present application may perform shielding treatment on the back surface of the LED semi-finished product by bonding a shielding film to the back surface of the LED semi-finished product. Certainly, in other examples of the present application, the present application may also use other types of shielding fixtures to perform shielding treatment on the back surface of the LED semi-finished product.
值得注意的是,为了确保沉积效果,需要对遮蔽后的所述LED半成品进行干燥处理。也就是说,所述防护式LED封装方法的所述步骤S130,可以进一步包括步骤:It is worth noting that, in order to ensure the deposition effect, the LED semi-finished product after shading needs to be dried. That is to say, the step S130 of the protective LED packaging method may further include the steps of:
通过干燥柜对摆盘后的所述LED半成品进行干燥处理,以在获得干燥后的所述LED半成品后再放置于所述镀膜设备的所述镀膜腔室内进行后续的镀膜作业。The placed LED semi-finished products are dried in a drying cabinet, so that after the dried LED semi-finished products are obtained, they are placed in the coating chamber of the coating equipment for subsequent coating operations.
示例性地,所述干燥柜可以利用相对湿度小于3%、温度在20-30℃,以及流量在15-18m3/h的气体,如空气,进行干燥。Exemplarily, the drying cabinet can use gas, such as air, with a relative humidity of less than 3%, a temperature of 20-30° C., and a flow rate of 15-18 m3/h.
根据本申请的上述实施例,如图3所示,所述防护式LED封装方法的所述步骤S110,可以包括步骤:According to the above-mentioned embodiment of the present application, as shown in FIG. 3, the step S110 of the protective LED packaging method may include the steps of:
S111:使用平面锡膏印刷机和3D印刷钢网在EMC支架的碗杯内印刷锡膏;S111: Use a flat solder paste printing machine and a 3D printing stencil to print solder paste in the cup of the EMC bracket;
S112:将印刷好的所述EMC支架在LED固晶机上进行固晶作业,以将所述发光元件固定于所述EMC支架;以及S112: Carry out die-bonding operation on the printed EMC bracket on an LED die-bonding machine, so as to fix the light-emitting element on the EMC bracket; and
S113:通过回流焊机台进行回流焊作业,以可导通地连接所述发光元件和所述EMC支架。S113: Perform reflow soldering operation by using a reflow soldering machine to conductively connect the light emitting element and the EMC bracket.
值得注意的是,尽管在本申请的上述实施例中所述聚合物膜层是在固晶、焊线以及点胶之后形成的,以改善所述LED产品(如LED灯珠或LED显示屏等)的防水、防硫和防氧性能。但在本申请的其他示例中,所述聚合物膜层也可以在固晶之前形成,或者还可以在点胶之前且焊线之后形成。It is worth noting that although in the above-mentioned embodiments of the present application, the polymer film layer is formed after solid crystal, wire bonding and glue dispensing, in order to improve the LED products (such as LED lamp beads or LED display screens, etc.) ) waterproof, anti-sulfur and anti-oxidation properties. However, in other examples of the present application, the polymer film layer may also be formed before die bonding, or may also be formed before glue dispensing and after wire bonding.
附图5示出了根据本申请的上述实施例的所述防护式LED封装方法的第一变形实施方式。具体地,相比于根据本申请的上述实施例,根据本申请的所述第一变形实施方式的不同之处在于:所述防护式LED封装方法,可以包括步骤:Fig. 5 shows a first modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application. Specifically, compared with the above-mentioned embodiment according to the present application, the difference of the first variant implementation according to the present application is that: the protective LED packaging method may include the steps of:
S210:通过等离子体增强化学气相沉积法,在LED支架的镀银表面沉积形成聚合物膜层;S210: Depositing a polymer film layer on the silver-plated surface of the LED bracket by a plasma-enhanced chemical vapor deposition method;
S220:将发光元件可导通地固定于镀有所述聚合物膜层的所述LED支架;S220: Conductively fixing the light-emitting element to the LED bracket coated with the polymer film layer;
S230:点胶于所述发光元件和所述LED支架以形成封装胶层,以制成所述防护式LED半成品;以及S230: dispensing glue on the light-emitting element and the LED bracket to form an encapsulating glue layer, so as to make the semi-finished protective LED; and
S240:将所述防护式LED半成品切割成单颗,以获得防护式LED成品。S240: Cut the protective LED semi-finished product into individual pieces to obtain a protective LED finished product.
如图6所示,所述防护式LED成品50包括LED支架51、发光元件52、封装胶层53以及聚合物膜层54,其中所述发光元件52被可导通地固定于所述LED支架51的镀银表面510,并且所述封装胶层53包覆地封装所述发光元件52,其中所述聚合物膜层54被镀于所述LED支架51的所述镀银表面510,并且所述聚合物膜层54位于所述LED支架51的所述镀银表面510与 所述发光元件52和所述封装胶层53之间,以通过所述聚合物膜层54将所述LED支架51的所述镀银表面510与所述发光元件52和所述封装胶层53分隔开。As shown in FIG. 6, the protective LED finished product 50 includes an LED bracket 51, a light emitting element 52, a packaging adhesive layer 53 and a polymer film layer 54, wherein the light emitting element 52 is conductively fixed to the LED bracket 51 of the silver-plated surface 510, and the encapsulation adhesive layer 53 encapsulates the light-emitting element 52, wherein the polymer film layer 54 is plated on the silver-plated surface 510 of the LED bracket 51, and the The polymer film layer 54 is located between the silver-plated surface 510 of the LED bracket 51 and the light-emitting element 52 and the encapsulation adhesive layer 53, so that the LED bracket 51 is sealed by the polymer film layer 54. The silver-plated surface 510 is separated from the light-emitting element 52 and the packaging adhesive layer 53 .
附图7示出了根据本申请的上述实施例的所述防护式LED封装方法的第二变形实施方式。具体地,相比于根据本申请的上述实施例,根据本申请的所述第二变形实施方式的不同之处在于:所述防护式LED封装方法,可以包括步骤:FIG. 7 shows a second modified implementation of the protective LED packaging method according to the above-mentioned embodiments of the present application. Specifically, compared with the above-mentioned embodiment according to the present application, the difference of the second variant implementation according to the present application is that: the protective LED packaging method may include the steps of:
S310:将发光元件可导通地固定于LED支架;S310: Conductively fixing the light-emitting element to the LED bracket;
S320:通过等离子体增强化学气相沉积法,在所述LED支架的镀银表面和所述发光元件的表面沉积形成聚合物膜层;S320: Deposit and form a polymer film layer on the silver-plated surface of the LED bracket and the surface of the light-emitting element by plasma-enhanced chemical vapor deposition;
S330:点胶于所述聚合物膜层以形成封装胶层,以制成所述防护式LED半成品;以及S330: dispensing glue on the polymer film layer to form an encapsulation glue layer, so as to make the protective LED semi-finished product; and
S340:将所述防护式LED半成品切割成单颗,以获得防护式LED成品。S340: Cut the semi-finished protective LED into single pieces to obtain finished protective LED.
如图8所示,所述防护式LED成品50包括LED支架51、发光元件52、封装胶层53以及聚合物膜层54,其中所述发光元件52被可导通地固定于所述LED支架51的镀银表面510,并且所述封装胶层53包覆地封装所述发光元件52,其中所述聚合物膜层54被镀于所述LED支架51的所述镀银表面510和所述发光元件52的表面,并且所述聚合物膜层54位于所述封装胶层53与所述发光元件52和所述LED支架52的所述镀银表面510之间,以通过所述聚合物膜层54将所述封装胶层53与所述发光元件52和所述LED支架52的所述镀银表面510分隔开。As shown in Figure 8, the protective LED finished product 50 includes an LED bracket 51, a light emitting element 52, an encapsulation layer 53 and a polymer film layer 54, wherein the light emitting element 52 is conductively fixed to the LED bracket 51 of the silver-plated surface 510, and the encapsulation adhesive layer 53 encapsulates the light-emitting element 52, wherein the polymer film layer 54 is plated on the silver-plated surface 510 of the LED bracket 51 and the The surface of the light-emitting element 52, and the polymer film layer 54 is located between the encapsulation adhesive layer 53 and the silver-plated surface 510 of the light-emitting element 52 and the LED bracket 52, so as to pass through the polymer film The layer 54 separates the packaging adhesive layer 53 from the light emitting element 52 and the silver-plated surface 510 of the LED bracket 52 .
根据本申请的另一方面,如图9本申请进一步提供了防护式LED封装系统1,其中所述防护式LED封装系统1可以包括固晶设备10,其中所述固晶设备10用于将发光元件可导通地固定于LED支架;点胶设备20,其中所述点胶设备20用于点胶于该发光元件和该LED支架以形成封装胶层,以制成LED半成品;以及镀膜设备30,其中所述镀膜设备30用于通过等离子体增强化学气相沉积法,在该LED半成品的表面沉积形成聚合物膜层,以制成防 护式LED半成品。According to another aspect of the present application, as shown in FIG. 9 , the present application further provides a protective LED packaging system 1, wherein the protective LED packaging system 1 may include a die-bonding device 10, wherein the die-bonding device 10 is used to light-emitting The component can be conductively fixed to the LED bracket; the dispensing equipment 20, wherein the dispensing equipment 20 is used for dispensing glue on the light-emitting element and the LED bracket to form an encapsulation layer to make an LED semi-finished product; and a coating equipment 30 , wherein the coating device 30 is used for depositing and forming a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to make a protective LED semi-finished product.
值得注意的是,在本申请的一示例中,如图9和图10所示,所述镀膜设备30可以包括镀膜腔室31、适于被可活动地设置于所述镀膜腔室31的可活动支架32、被可拆卸地置于所述可活动支架32的置物盘33、给排气系统34以及激发系统35。所述置物盘33用于对多个所述LED半成品进行摆盘放置,并且所述可活动支架32用于带动被放置于所述置物盘33的所述LED半成品在所述镀膜腔室31内运动。所述给排气系统34与所述镀膜腔室31可导通地连接,用于在向外排气以在所述镀膜腔室31内形成真空度的同时,向内供气以向所述镀膜腔室31提供所述反应原料。所述激发系统35被对应地设置于所述镀膜腔室31,用于在所述镀膜腔室31内产生激发电磁场,以电离该反应原料而形成等离子体,使得该等离子体在该LED半成品的表面沉积以形成所述聚合物膜层。It should be noted that, in an example of the present application, as shown in FIG. 9 and FIG. 10 , the coating device 30 may include a coating chamber 31 , a movable The movable bracket 32 , the storage tray 33 detachably placed on the movable bracket 32 , the air supply and exhaust system 34 and the excitation system 35 . The storage tray 33 is used to place a plurality of LED semi-finished products on a plate, and the movable bracket 32 is used to drive the LED semi-finished products placed on the storage tray 33 in the coating chamber 31 sports. The air supply and exhaust system 34 is conductively connected with the coating chamber 31, and is used to supply gas inward to the coating chamber 31 while exhausting the gas outward to form a vacuum in the coating chamber 31. The coating chamber 31 provides the reaction raw materials. The excitation system 35 is correspondingly arranged in the coating chamber 31, and is used to generate an excitation electromagnetic field in the coating chamber 31 to ionize the reaction material to form a plasma, so that the plasma is formed in the LED semi-finished product. surface deposition to form the polymer film layer.
具体地,所述可活动支架32可以包括一公转支架321和多个自转支架322,其中所述公转支架321被可转动地设置于所述镀膜腔室31,并且所述多个自转支架322分别被可转动地设置于所述公转支架321,以形成行星转架,其中所述多个自转支架322用于放置所述置物盘33,使得被放置于所述置物盘33的该LED半成品在所述自转支架322的带动下,绕着所述自转支架322的自转轴进行转动的同时,还在所述公转支架321的带动下,绕着所述公转支架321的公转轴进行转动。也就是说,被放置于所述置物盘33的该LED半成品在所述镀膜腔室31内既进行自转,又进行公转,使得所有的该LED半成品不管其在所述镀膜腔室31内的初始位置是处于边缘部分还是中央部分,均能够被转动至所述镀膜腔室31的边缘部分,以便为所有的该LED半成品提供一致性更高的镀膜条件,从而确保所有的该LED半成品获得均匀性一致的膜层,以便满足工业化批量化生产的要求。Specifically, the movable support 32 may include a revolving support 321 and a plurality of self-rotating supports 322, wherein the revolving support 321 is rotatably arranged in the coating chamber 31, and the plurality of self-rotating supports 322 are respectively It is rotatably arranged on the revolving support 321 to form a planetary turret, wherein the plurality of self-rotating supports 322 are used to place the storage tray 33, so that the LED semi-finished product placed on the storage tray 33 is placed on the storage tray 33. Driven by the rotation bracket 322, while rotating around the rotation axis of the rotation bracket 322, it is also driven by the revolution bracket 321 to rotate around the revolution axis of the revolution bracket 321. That is to say, the LED semi-finished products placed on the storage tray 33 both rotate and revolve in the coating chamber 31, so that all the LED semi-finished products regardless of their initial position in the coating chamber 31 Whether the position is in the edge part or the central part, it can be rotated to the edge part of the coating chamber 31, so as to provide more consistent coating conditions for all the LED semi-finished products, thereby ensuring that all the LED semi-finished products obtain uniformity Consistent film layer in order to meet the requirements of industrial mass production.
优选地,如图11所示,所述置物盘33具有多个置物槽330,其中所述多个置物槽330沿着所述置物盘的径向方向延伸,以将所述LED半成品插放于所述置物盘33的所述置物槽330,以便在有限的空间内放置更多数量的所述 LED半成品的同时,还能够避免多个所述LED半成品相互遮挡而影响镀膜效果。Preferably, as shown in FIG. 11 , the storage tray 33 has a plurality of storage slots 330, wherein the plurality of storage slots 330 extend along the radial direction of the storage tray, so as to insert the LED semi-finished products in The storage slot 330 of the storage tray 33 is used to place more LED semi-finished products in a limited space, and at the same time prevent a plurality of LED semi-finished products from blocking each other and affect the coating effect.
更优选地,如图11所示,所述置物盘33包括栅格板331和网格板332,其中所述栅格板331与所述网格板332间隔地叠置,以在所述栅格板331和所述网格板332之间形成所述多个置物槽330,从而在确保插置所述LED半成品的同时,最大限度地减少所述置物盘33对所述LED半成品的遮挡。More preferably, as shown in FIG. 11 , the storage tray 33 includes a grid plate 331 and a grid plate 332, wherein the grid plate 331 and the grid plate 332 are stacked at intervals, so that The plurality of storage slots 330 are formed between the grid plate 331 and the grid plate 332 , so as to ensure the insertion of the LED semi-finished products while minimizing the shielding of the LED semi-finished products by the storage tray 33 .
在本申请的一示例中,该聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过该等离子体增强化学气相沉积法在该LED半成品的表面形成的膜层。In an example of the present application, the polymer film layer is composed of acrylate monomers, fluorine-containing olefin monomers, silicone-based monomers, epoxy-based monomers and aromatic ring-containing organic monomers One or more of the monomer groups are used as reaction raw materials, and the film layer is formed on the surface of the LED semi-finished product by the plasma enhanced chemical vapor deposition method.
根据本申请的上述实施例,如图9所示,所述防护式LED封装系统,可以进一步包括切割设备40,其中所述切割设备40用于将该防护式LED半成品切割成单颗,以获得防护式LED成品。According to the above-mentioned embodiment of the present application, as shown in FIG. 9, the protective LED packaging system may further include a cutting device 40, wherein the cutting device 40 is used to cut the protective LED semi-finished products into individual pieces to obtain Protected LED finished product.
值得一提的是,无论是以LED半成品为LED基材,还是以LED支架或固晶后的LED支架为LED基材进行镀膜,本申请的所述防护式LED封装方法均能够制备出所述防护式LED成品。此外,根据本申请的上述实施例的所述防护式LED封装系统虽然是以执行根据本申请的上述实施例的所述防护式LED封装方法为例进行描述的,但其也可以用来执行根据本申请的上述第一或第二变形实施方式的所述防护式LED封装方法,本申请在此不再赘述。It is worth mentioning that, whether the LED semi-finished product is used as the LED base material, or the LED bracket or the LED bracket after solid crystal is used as the LED base material for coating, the protective LED packaging method of the application can prepare the above-mentioned Protected LED finished product. In addition, although the protective LED packaging system according to the above embodiments of the present application is described as an example of implementing the protective LED packaging method according to the above embodiments of the present application, it can also be used to implement the The protective LED packaging method of the above-mentioned first or second variant implementation of the present application will not be described in detail here.
以下通过具体实施例对本发明作进一步详细说明,需要指出的是,以下所述实施例旨在便于对本发明的理解,而对其不起任何限定作用。The present invention will be further described in detail through specific examples below. It should be pointed out that the following examples are intended to facilitate the understanding of the present invention, but do not limit it in any way.
实施例1Example 1
本实施例通过等离子增强化学气相沉积法制备的所述聚合物膜层的总厚度约为200nm。In this embodiment, the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 200 nm.
所述聚合物膜层可以按照以下步骤进行制备:The polymer film layer can be prepared according to the following steps:
(1)前处理:将基材置于PECVD装置的反应腔室内,闭合所述反应腔室并对所述反应腔室连续抽真空,将所述反应腔室内的真空度抽到20毫托, 通入惰性气体Ar,开启运动机构,使得所述基材在所述反应腔室内产生运动。(1) Pre-treatment: the substrate is placed in the reaction chamber of the PECVD device, the reaction chamber is closed and the reaction chamber is continuously evacuated, and the vacuum degree in the reaction chamber is evacuated to 20 millitorr, The inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
在所述步骤(1)中,所述反应腔室为旋转体形腔室,并且所述反应腔室的容积为100L,所述反应腔室的温度控制在30℃,通入惰性气体的流量为15sccm。所述基材在所述反应腔室内进行圆周运动,转速为2转/min。In the step (1), the reaction chamber is a rotating body chamber, and the volume of the reaction chamber is 100L, the temperature of the reaction chamber is controlled at 30° C., and the flow rate of the inert gas is: 15 sccm. The substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
(2)膜层制备:通入单体蒸汽到所述PECVD装置的所述反应腔室内,抽真空至真空度为120毫托,开启等离子体放电,进行化学气相沉积,在所述基材表面形成所述聚合物膜层。所述单体蒸汽成分为一种含双键结构的有机硅单体和两种多官能度不饱和烃及烃类衍生物的混合物,并且所述单体蒸汽中多官能度不饱和烃及烃类衍生物所占的质量分数为29%。(2) Film layer preparation: feed monomer vapor into the reaction chamber of the PECVD device, evacuate to a vacuum of 120 mTorr, turn on the plasma discharge, and perform chemical vapor deposition on the surface of the substrate The polymer film layer is formed. The monomer vapor component is a mixture of an organosilicon monomer containing a double bond structure and two multifunctional unsaturated hydrocarbons and hydrocarbon derivatives, and the multifunctional unsaturated hydrocarbon and hydrocarbon derivatives in the monomer vapor The mass fraction of quasi-derivatives is 29%.
在所述步骤(2)中:等离子体放电,进行化学气相沉积,沉积过程中等离子体放电过程为小功率连续放电,具体包括以下沉积过程一次:沉积过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为150W,持续放电时间600s,然后进入镀膜阶段,调整等离子体放电功率为60W,持续放电时间800s。In the step (2): plasma discharge, chemical vapor deposition, the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 150W, and the continuous discharge time is 600s, and then enters the coating stage, and the plasma discharge power is adjusted to 60W, and the continuous discharge time is 800s.
在所述步骤(2)中:通入所述单体蒸汽为将单体通过加料泵进行雾化、挥发,由低压150毫托引入反应腔室,所述通入单体蒸汽的流量为500μL/min;其中所述一种含双键结构的有机硅单体为乙烯基三乙氧基硅烷;并且所述两种多官能度不饱和烃及烃类衍生物为:异戊二烯和二丙烯酸乙二醇酯。In the step (2): the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feeding pump, and the flow rate of the monomer steam is 500 μL /min; wherein said one type of organosilicon monomer containing a double bond structure is vinyltriethoxysilane; and said two kinds of polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives are: isoprene and di Ethylene glycol acrylate.
在所述步骤(2)中:等离子体的放电方式为射频放电。In the step (2): the plasma discharge method is radio frequency discharge.
(3)后处理:停止通入单体蒸汽,同时停止等离子体放电,持续抽真空,保持所述反应腔室的真空度为40毫托1min后,通入大气至一个大气压,停止基材的运动,然后取出基材即可。(3) Post-treatment: Stop feeding the monomer steam, stop the plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 40 millitorr for 1 min, then feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
实施例2Example 2
本实施例通过等离子增强化学气相沉积法制备的所述聚合物膜层的总厚度约为800nm。In this embodiment, the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 800 nm.
所述聚合物膜层可以按照以下步骤进行制备:The polymer film layer can be prepared according to the following steps:
(1)前处理:将基材置于PECVD装置的反应腔室内,闭合所述反应腔室并对所述反应腔室连续抽真空,将所述反应腔室内的真空度抽到20毫托,通入惰性气体Ar,开启运动机构,使得所述基材在所述反应腔室内产生运动。(1) Pre-treatment: the substrate is placed in the reaction chamber of the PECVD device, the reaction chamber is closed and the reaction chamber is continuously evacuated, and the vacuum degree in the reaction chamber is evacuated to 20 millitorr, The inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
在所述步骤(1)中,所述反应腔室为旋转体形腔室,并且所述反应腔室的容积为100L,所述反应腔室的温度控制在30℃,通入惰性气体的流量为15sccm。所述基材在所述反应腔室内进行圆周运动,转速为2转/min。In the step (1), the reaction chamber is a rotating body chamber, and the volume of the reaction chamber is 100L, the temperature of the reaction chamber is controlled at 30° C., and the flow rate of the inert gas is: 15 sccm. The substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
(2)膜层制备:通入单体蒸汽到所述PECVD装置的所述反应腔室内,抽真空至真空度为120毫托,开启等离子体放电,进行化学气相沉积,在所述基材的表面形成所述聚合物膜层。所述单体蒸汽成分为一种含双键结构的有机硅单体和两种多官能度不饱和烃及烃类衍生物的混合物,并且所述单体蒸汽中多官能度不饱和烃及烃类衍生物所占的质量分数为29%。(2) Film layer preparation: feed monomer vapor into the reaction chamber of the PECVD device, evacuate to a vacuum degree of 120 mTorr, turn on the plasma discharge, and perform chemical vapor deposition on the substrate. The polymer film layer is formed on the surface. The monomer vapor component is a mixture of an organosilicon monomer containing a double bond structure and two multifunctional unsaturated hydrocarbons and hydrocarbon derivatives, and the multifunctional unsaturated hydrocarbon and hydrocarbon derivatives in the monomer vapor The mass fraction of quasi-derivatives is 29%.
在所述步骤(2)中:等离子体放电,进行化学气相沉积,沉积过程中等离子体放电过程为小功率连续放电,具体包括以下沉积过程一次:沉积过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为150W,持续放电时间600s,然后进入镀膜阶段,调整等离子体放电功率为60W,持续放电时间3200s。In the step (2): plasma discharge, chemical vapor deposition, the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 150W, and the continuous discharge time is 600s, and then enters the coating stage, and the plasma discharge power is adjusted to 60W, and the continuous discharge time is 3200s.
在所述步骤(2)中:通入所述单体蒸汽为将单体通过加料泵进行雾化、挥发,由低压150毫托引入反应腔室,所述通入单体蒸汽的流量为500μL/min;其中所述一种含双键结构的有机硅单体为乙烯基三乙氧基硅烷;并且所述两种多官能度不饱和烃及烃类衍生物为:异戊二烯和二丙烯酸乙二醇酯。In the step (2): the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feeding pump, and the flow rate of the monomer steam is 500 μL /min; wherein said one type of organosilicon monomer containing a double bond structure is vinyltriethoxysilane; and said two kinds of polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives are: isoprene and di Ethylene glycol acrylate.
在所述步骤(2)中:等离子体的放电方式为射频放电。In the step (2): the plasma discharge method is radio frequency discharge.
(3)后处理:停止通入单体蒸汽,同时停止等离子体放电,持续抽真空,保持所述反应腔室的真空度为40毫托1min后,通入大气至一个大气压,停止基材的运动,然后取出基材即可。(3) Post-treatment: Stop feeding the monomer steam, stop the plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 40 millitorr for 1 min, then feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
实施例3Example 3
本实施例通过等离子增强化学气相沉积法制备的所述聚合物膜层的总厚度约为10nm。In this embodiment, the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 10 nm.
所述聚合物膜层可以按照以下步骤进行制备:The polymer film layer can be prepared according to the following steps:
(1)前处理:将基材置于纳米膜层制备设备的反应腔室内,闭合所述反应腔室并对所述反应腔室连续抽真空,将所述反应腔室内的真空度抽到10毫托,通入惰性气体Ar,开启运动机构,使得所述基材在所述反应腔室内产生运动。(1) Pretreatment: the base material is placed in the reaction chamber of the nano film layer preparation equipment, the reaction chamber is closed and the reaction chamber is continuously evacuated, and the vacuum degree in the reaction chamber is evacuated to 10 mTorr, the inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
在所述步骤(1)中,所述反应腔室为旋转体形腔室,并且所述反应腔室的容积为50L,所述反应腔室的温度控制在25℃,通入惰性气体的流量为5sccm。所述基材在所述反应腔室内进行圆周运动,转速为1转/min。In the step (1), the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 50L, the temperature of the reaction chamber is controlled at 25° C., and the flow rate of the inert gas is: 5 sccm. The substrate moves in a circular motion in the reaction chamber at a speed of 1 revolution/min.
(2)膜层制备:通入单体蒸汽到所述反应腔室内,抽真空至真空度为30毫托,开启等离子体放电,进行化学气相沉积,在所述基材的表面形成所述聚合物膜层。所述单体蒸汽成分为长链烷基丙烯酸酯类化合物。(2) Film layer preparation: feed monomer vapor into the reaction chamber, evacuate to a vacuum of 30 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer. The monomer vapor component is a long-chain alkyl acrylate compound.
在所述步骤(2)中:等离子体放电,进行化学气相沉积,沉积过程中等离子体放电过程为脉冲放电,具体包括以下沉积过程一次:沉积过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为150W,持续放电时间450s,然后进入镀膜阶段,镀膜阶段为脉冲放电,功率30W,时间600s,脉冲放电的频率为10HZ,脉冲的占空比为1:1。In the step (2): plasma discharge, chemical vapor deposition, the plasma discharge process is a pulse discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, and the pretreatment stage plasma The bulk discharge power is 150W, the continuous discharge time is 450s, and then enters the coating stage. The coating stage is pulse discharge, the power is 30W, the time is 600s, the frequency of pulse discharge is 10HZ, and the pulse duty ratio is 1:1.
在所述步骤(2)中:通入所述单体蒸汽为将单体通过加料泵进行雾化、挥发,由低压100毫托引入反应腔室,所述通入单体蒸汽的流量为30μL/min;其中所述长链烷基丙烯酸酯类化合物为甲基丙烯酸正己酯。In the step (2): the monomer steam is introduced into the reaction chamber by a low pressure of 100 mTorr to atomize and volatilize the monomer through the feed pump, and the flow rate of the monomer steam is 30 μL /min; wherein the long-chain alkyl acrylate compound is n-hexyl methacrylate.
在所述步骤(2)中:等离子体的放电方式为射频放电。In the step (2): the plasma discharge method is radio frequency discharge.
(3)后处理:停止通入单体蒸汽,同时停止等离子体放电,持续抽真空,保持所述反应腔室的真空度为10毫托1min后,通入大气至一个大气压,停止基材的运动,然后取出基材即可。(3) Post-treatment: Stop feeding the monomer steam, stop the plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 10 mTorr for 1 min, feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
实施例4Example 4
本实施例通过等离子增强化学气相沉积法制备的所述聚合物膜层的总厚度约为10um。In this embodiment, the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 10 um.
所述聚合物膜层可以按照以下步骤进行制备:The polymer film layer can be prepared according to the following steps:
(1)前处理:将基材置于纳米膜层制备设备的反应腔室内,闭合所述反应腔室并对所述反应腔室连续抽真空,将所述反应腔室内的真空度抽到200毫托,通入惰性气体Ar,开启运动机构,使得所述基材在所述反应腔室内产生运动。(1) Pre-treatment: place the base material in the reaction chamber of the nano film layer preparation equipment, close the reaction chamber and continuously evacuate the reaction chamber, and evacuate the vacuum degree in the reaction chamber to 200 mTorr, the inert gas Ar is introduced, and the movement mechanism is turned on, so that the substrate moves in the reaction chamber.
在所述步骤(1)中,所述反应腔室为旋转体形腔室,并且所述反应腔室的容积为1000L,所述反应腔室的温度控制在60℃,通入惰性气体的流量为300sccm。所述基材在所述反应腔室内进行圆周运动,转速为3转/min。In the step (1), the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 1000L, the temperature of the reaction chamber is controlled at 60 ° C, and the flow rate of the inert gas is 300 sccm. The substrate moves in a circular motion in the reaction chamber at a speed of 3 revolutions/min.
(2)膜层制备:通入单体蒸汽到所述反应腔室内,抽真空至真空度为300毫托,开启等离子体放电,进行化学气相沉积,在所述基材的表面形成所述聚合物膜层。所述单体蒸汽成分为含氟丙烯酸酯类化合物。(2) Film layer preparation: feed monomer vapor into the reaction chamber, evacuate to a vacuum of 300 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer. The monomer vapor component is a fluorine-containing acrylate compound.
在所述步骤(2)中:等离子体放电,进行化学气相沉积,沉积过程中等离子体放电过程为小功率连续放电,具体包括以下沉积过程一次:沉积过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为600W,持续放电时间450s,然后进入镀膜阶段,调整等离子体放电功率为200W,持续放电时间14400s。In the step (2): plasma discharge, chemical vapor deposition, the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 600W, and the continuous discharge time is 450s, and then enters the coating stage, and the plasma discharge power is adjusted to 200W, and the continuous discharge time is 14400s.
在所述步骤(2)中:通入所述单体蒸汽为将单体通过加料泵进行雾化、挥发,由低压300毫托引入反应腔室,所述通入单体蒸汽的流量为1000μL/min;其中所述含氟丙烯酸酯类化合物为1H,1H,2H,2H-全氟癸基丙烯酸酯。In the step (2): the monomer steam is introduced into the reaction chamber by a low pressure of 300 mTorr to atomize and volatilize the monomer through the feed pump, and the flow rate of the monomer steam is 1000 μL /min; wherein the fluorine-containing acrylate compound is 1H, 1H, 2H, 2H-perfluorodecyl acrylate.
在所述步骤(2)中:等离子体的放电方式为微波放电。In the step (2): the plasma discharge mode is microwave discharge.
(3)后处理:停止通入单体蒸汽,同时停止等离子体放电,持续抽真空,保持所述反应腔室的真空度为200毫托5min后,通入大气至一个大气压,停止基材的运动,然后取出基材即可。(3) Post-processing: stop feeding monomer steam, stop plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 200 millitorr for 5 minutes, feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
实施例5Example 5
本实施例通过等离子增强化学气相沉积法制备的所述聚合物膜层的总厚度约为20nm。In this embodiment, the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 20 nm.
所述聚合物膜层可以按照以下步骤进行制备:The polymer film layer can be prepared according to the following steps:
(1)前处理:将基材置于纳米膜层制备设备的反应腔室内,闭合所述反应腔室并对所述反应腔室连续抽真空,将所述反应腔室内的真空度抽到20毫托,通入惰性气体He,开启运动机构,使得所述基材在所述反应腔室内产生运动。(1) Pretreatment: place the base material in the reaction chamber of the nano film layer preparation equipment, close the reaction chamber and continuously evacuate the reaction chamber, and evacuate the vacuum degree in the reaction chamber to 20 In mTorr, the inert gas He is fed, and the motion mechanism is turned on, so that the substrate moves in the reaction chamber.
在所述步骤(1)中,所述反应腔室为旋转体形腔室,并且所述反应腔室的容积为200L,所述反应腔室的温度控制在40℃,通入惰性气体的流量为20sccm。所述基材在所述反应腔室内进行圆周运动,转速为2转/min。In the step (1), the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 200L, the temperature of the reaction chamber is controlled at 40 ° C, and the flow rate of the inert gas is 20 sccm. The substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
(2)膜层制备:通入单体蒸汽到所述反应腔室内,抽真空至真空度为150毫托,开启等离子体放电,进行化学气相沉积,在所述基材的表面形成所述聚合物膜层。所述单体蒸汽成分为一种环氧类单体。(2) Film layer preparation: feed monomer vapor into the reaction chamber, evacuate to a vacuum of 150 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer. The monomer vapor component is an epoxy monomer.
在所述步骤(2)中:等离子体放电,进行化学气相沉积,沉积过程中等离子体放电过程为脉冲放电,具体包括以下沉积过程一次:沉积过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为200W,持续放电时间100s,然后进入镀膜阶段,镀膜阶段为脉冲放电,功率100W,时间600s,脉冲放电的频率为500HZ,脉冲的占空比为1:10。In the step (2): plasma discharge, chemical vapor deposition, the plasma discharge process is a pulse discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, and the pretreatment stage plasma The body discharge power is 200W, the continuous discharge time is 100s, and then enters the coating stage, the coating stage is pulse discharge, the power is 100W, the time is 600s, the frequency of pulse discharge is 500HZ, and the pulse duty ratio is 1:10.
在所述步骤(2)中:通入所述单体蒸汽为将单体通过加料泵进行雾化、挥发,由低压150毫托引入反应腔室,所述通入单体蒸汽的流量为100μL/min;其中所述环氧类单体为3-缩水甘油醚氧基丙基三乙氧基硅烷。In the step (2): the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feed pump, and the flow rate of the monomer steam is 100 μL /min; wherein the epoxy monomer is 3-glycidyl etheroxypropyl triethoxysilane.
在所述步骤(2)中:等离子体的放电方式为射频放电。In the step (2): the plasma discharge method is radio frequency discharge.
(3)后处理:停止通入单体蒸汽,同时停止等离子体放电,持续抽真空,保持所述反应腔室的真空度为50毫托1min后,通入大气至一个大气压,停止基材的运动,然后取出基材即可。(3) Post-processing: stop feeding monomer steam, stop plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 50 mTorr for 1 min, feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
实施例6Example 6
本实施例通过等离子增强化学气相沉积法制备的所述聚合物膜层的总厚度约为2um。In this embodiment, the total thickness of the polymer film layer prepared by the plasma enhanced chemical vapor deposition method is about 2 μm.
所述聚合物膜层可以按照以下步骤进行制备:The polymer film layer can be prepared according to the following steps:
(1)前处理:将基材置于纳米膜层制备设备的反应腔室内,闭合所述反应腔室并对所述反应腔室连续抽真空,将所述反应腔室内的真空度抽到20毫托,通入惰性气体He,开启运动机构,使得所述基材在所述反应腔室内产生运动。(1) Pretreatment: place the base material in the reaction chamber of the nano film layer preparation equipment, close the reaction chamber and continuously evacuate the reaction chamber, and evacuate the vacuum degree in the reaction chamber to 20 In mTorr, the inert gas He is fed, and the motion mechanism is turned on, so that the substrate moves in the reaction chamber.
在所述步骤(1)中,所述反应腔室为旋转体形腔室,并且所述反应腔室的容积为200L,所述反应腔室的温度控制在40℃,通入惰性气体的流量为20sccm。所述基材在所述反应腔室内进行圆周运动,转速为2转/min。In the step (1), the reaction chamber is a rotating body-shaped chamber, and the volume of the reaction chamber is 200L, the temperature of the reaction chamber is controlled at 40 ° C, and the flow rate of the inert gas is 20 sccm. The substrate moves in a circular motion in the reaction chamber at a speed of 2 revolutions/min.
(2)膜层制备:通入单体蒸汽到所述反应腔室内,抽真空至真空度为150毫托,开启等离子体放电,进行化学气相沉积,在所述基材的表面形成所述聚合物膜层。所述单体蒸汽成分为一种含氟烯烃类单体。(2) Film layer preparation: feed monomer vapor into the reaction chamber, evacuate to a vacuum of 150 mTorr, turn on the plasma discharge, perform chemical vapor deposition, and form the polymer on the surface of the substrate. film layer. The monomer vapor component is a fluorine-containing olefin monomer.
在所述步骤(2)中:等离子体放电,进行化学气相沉积,沉积过程中等离子体放电过程为小功率连续放电,具体包括以下沉积过程一次:沉积过程包括预处理阶段和镀膜阶段,预处理阶段等离子体放电功率为200W,持续放 电时间100s,然后进入镀膜阶段,调整等离子体放电功率为100W,持续放电时间7200s。In the step (2): plasma discharge, chemical vapor deposition, the plasma discharge process is a low-power continuous discharge during the deposition process, specifically including the following deposition process once: the deposition process includes a pretreatment stage and a coating stage, the pretreatment In the first stage, the plasma discharge power is 200W, and the continuous discharge time is 100s, and then enters the coating stage, and the plasma discharge power is adjusted to 100W, and the continuous discharge time is 7200s.
在所述步骤(2)中:通入所述单体蒸汽为将单体通过加料泵进行雾化、挥发,由低压150毫托引入反应腔室,所述通入单体蒸汽的流量为600μL/min;其中所述含氟烯烃类单体为1H,1H,2H-全氟-1-十二烯。In the step (2): the monomer steam is introduced into the reaction chamber by a low pressure of 150 mTorr to atomize and volatilize the monomer through the feeding pump, and the flow rate of the monomer steam is 600 μL /min; wherein the fluorine-containing olefin monomer is 1H, 1H, 2H-perfluoro-1-dodecene.
在所述步骤(2)中:等离子体的放电方式为射频放电。In the step (2): the plasma discharge method is radio frequency discharge.
(3)后处理:停止通入单体蒸汽,同时停止等离子体放电,持续抽真空,保持所述反应腔室的真空度为50毫托1min后,通入大气至一个大气压,停止基材的运动,然后取出基材即可。(3) Post-processing: stop feeding monomer steam, stop plasma discharge at the same time, continue vacuuming, keep the vacuum degree of the reaction chamber at 50 mTorr for 1 min, feed the atmosphere to an atmospheric pressure, and stop the vacuuming of the substrate. Motion, then remove the substrate.
值得一提的是,对上述各实施例施镀后的基材(如LED半成品、LED灯珠、LED显示器或LED灯板等),进行高温老化测试、高温高湿测试、红墨水测试、硫化测试以及热量冲击测试等各种类型的测试,并与未处理的基材和表面喷涂后的基材的测试结果进行对比,其对比结果如图12所示。It is worth mentioning that, for the substrates (such as LED semi-finished products, LED lamp beads, LED displays or LED lamp panels, etc.) after plating in the above-mentioned embodiments, high-temperature aging tests, high-temperature and high-humidity tests, red ink tests, and vulcanization tests were carried out. Various types of tests such as test and thermal shock test are compared with the test results of the untreated substrate and the substrate after surface spraying, and the comparison results are shown in Figure 12.
值得注意的是,本申请所提及的高温老化测试:先将LED灯珠样品放置于85℃的高温箱中贮存48h,再点亮观察该LED灯珠是否有死灯情况。It is worth noting that the high-temperature aging test mentioned in this application: first place the LED lamp bead sample in a high-temperature box at 85°C for 48 hours, and then light it up to observe whether the LED lamp bead has dead light.
高温高湿测试:将不通电的LED灯珠样品放置于高温湿热试验箱,其中该试验箱的温度、湿度分别被设定为50℃、90%RH,使得该LED灯珠样品在高温高湿环境中放置216h;期间每间隔72h点亮灯珠,观察灯珠模块电气性能状况,并观察灯板显示是否正常(如有无大面积死灯/缺色)。High temperature and high humidity test: Place the LED lamp bead sample without power in the high temperature and humidity test chamber, where the temperature and humidity of the test chamber are set to 50°C and 90% RH respectively, so that the LED lamp bead sample can be tested under high temperature and high humidity. Place it in the environment for 216 hours; during this period, turn on the lamp beads at intervals of 72 hours, observe the electrical performance of the lamp bead module, and observe whether the display of the lamp board is normal (such as whether there is a large area of dead lights/lack of color).
红墨水测试:先配置红墨水酒精混合液,两者的比例为1:1;再将LED灯珠样品放置于红墨水酒精混合液中,95℃煮沸测试4h,之后观察灯珠内部是否有红墨水渗入。Red ink test: First configure the red ink alcohol mixture, the ratio of the two is 1:1; then place the LED lamp bead sample in the red ink alcohol mixture, boil it at 95°C for 4 hours, and then observe whether there is red ink inside the lamp bead. Ink seeps in.
硫化测试:先取1g硫粉放置于25mL烧杯中,将25mL烧杯放入500mL的U型瓶中央;再将LED灯珠样品放入U型杯内,灯珠正面均朝上,用标签纸把灯珠均匀贴置于U型杯盖子的正中央;最后密封500mL的U型瓶,并放入105℃的烘箱中烘4h,观察灯珠是否出现黑色、胶裂、脱落等不良现象。Vulcanization test: First take 1g of sulfur powder and place it in a 25mL beaker, then put the 25mL beaker into the center of a 500mL U-shaped bottle; then put the LED lamp bead sample into the U-shaped cup, with the front of the lamp bead facing up, and wrap the lamp with label paper The beads are placed evenly in the center of the U-shaped cup lid; finally, the 500mL U-shaped bottle is sealed and baked in an oven at 105°C for 4 hours to observe whether the lamp beads appear black, glue cracked, or fall off.
冷热冲击测试:先将LED灯珠样品放置于-40℃至100℃的冷热冲击箱中;再以高温低温各15min,且40min的周期存储72h,试验后观察灯板显示是否正常(如有无大面积死灯或缺色),灯板外观是否正常(如有无发白、脱层 等异常)。Thermal shock test: first place the LED lamp bead sample in a thermal shock box at -40°C to 100°C; Whether there is a large area of dead lights or lack of color), whether the appearance of the light board is normal (such as whether there are abnormalities such as whitening and delamination).
根据本申请的另一方面,为了进一步验证所述防护式LED封装方法的效果,需要对所述防护式LED成品(如镀膜后的LED灯珠等)进行光衰实验、硫化实验、可焊接性实验、分光探针导电实验、冷热冲击实验以及高温高湿老化实验。According to another aspect of the present application, in order to further verify the effect of the protective LED packaging method, it is necessary to carry out light decay experiments, vulcanization experiments, and weldability tests on the protective LED finished products (such as coated LED lamp beads, etc.). Experiments, spectroscopic probe conduction experiments, thermal shock experiments, and high-temperature and high-humidity aging experiments.
具体地,所述光衰实验是为了确认镀膜后LED灯珠的亮度衰减,并且光衰实验的要求是光电参数测试LM光衰小于等于5%,且xy偏移小于等于0.008。示例性地,分别对镀膜前后的LED灯珠进行光衰实验,其中镀膜200nm的LED灯珠的光衰数据如图13A所示,镀膜800nm的LED灯珠的光衰数据如图13B所示。由光衰数据易知:镀膜前后LED灯珠的平均亮度衰减小于1.1%,平均xy偏移小于0.0011,满足光衰实验的要求。Specifically, the light attenuation experiment is to confirm the brightness attenuation of the LED lamp bead after coating, and the requirement of the light attenuation experiment is that the photoelectric parameter test LM light attenuation is less than or equal to 5%, and the xy offset is less than or equal to 0.008. Exemplarily, light attenuation experiments are carried out on the LED lamp beads before and after coating, wherein the light attenuation data of the LED lamp beads coated with 200nm are shown in Figure 13A, and the light decay data of the LED lamp beads coated with 800nm are shown in Figure 13B. It is easy to know from the light decay data: the average brightness decay of the LED lamp beads before and after coating is less than 1.1%, and the average xy shift is less than 0.0011, which meets the requirements of the light decay experiment.
所述硫化实验可根据LED支架的不同类型分别进行实验,其中所述LED支架通常分为硬胶落料式LED支架,硬胶切割式LED支架以及软胶切割式LED支架,并且所述硫化实验的条件包括:1)实验样品数为10pcs;2)硫粉使用添加量为1.3mg/ml;3)实验温度为75℃±2%;高温储存实验为8H。所述硫化实验的要求是LED灯珠经过以上条件后进行外观检查,灯珠内外部不允许有黑色、胶裂、脱胶等不良现象。示例性地,分别对具有各种支架类型的未镀膜的LED灯珠、镀膜200nm的LED灯珠以及镀膜800nm的LED灯珠进行硫化实验,其中当支架类型为硬胶落料式时,未镀膜的LED灯珠、镀膜200nm的LED灯珠以及镀膜800nm的LED灯珠的硫化衰减数据依次如图14A、14B以及14C所示;当支架类型为硬胶切割式时,未镀膜的LED灯珠、镀膜200nm的LED灯珠以及镀膜800nm的LED灯珠的硫化衰减数据依次如图15A、15B以及15C所示;当支架类型为软胶切割式时,镀膜200nm的LED灯珠的硫化衰减数据依次如图16所示。由硫化衰减数据易知:在测试条件下,硬胶落料式、硬胶切割式以及软胶切割式的镀膜LED灯珠均未出现发黑现象。The vulcanization experiment can be carried out according to different types of LED brackets, wherein the LED brackets are usually divided into hard rubber blanking type LED brackets, hard rubber cutting type LED brackets and soft rubber cutting type LED brackets, and the vulcanization experiment The conditions include: 1) the number of experimental samples is 10pcs; 2) the amount of sulfur powder added is 1.3mg/ml; 3) the experimental temperature is 75°C ± 2%; the high temperature storage experiment is 8H. The requirement of the vulcanization experiment is that the appearance of the LED lamp bead is inspected after the above conditions, and the inside and outside of the lamp bead are not allowed to have black, glue cracking, degumming and other bad phenomena. Exemplarily, vulcanization experiments were carried out on uncoated LED lamp beads with various bracket types, LED lamp beads with 200nm coating and LED lamp beads with 800nm coating, wherein when the bracket type is hard rubber blanking type, the uncoated Figure 14A, 14B and 14C show the vulcanization attenuation data of the LED lamp bead with 200nm coating, and the LED lamp bead with 800nm coating; The vulcanization attenuation data of 200nm-coated LED lamp beads and 800nm-coated LED lamp beads are shown in Figure 15A, 15B, and 15C in sequence; Figure 16 shows. It is easy to know from the vulcanization attenuation data: Under the test conditions, the hard rubber blanking type, hard rubber cutting type and soft rubber cutting type coated LED lamp beads did not appear black.
所述可焊接性实验可对360全方位镀膜的LED灯珠和遮挡背面后镀膜的LED灯珠进行回流焊测试,以在进行三次270℃、10S的回流焊之后观察外观是否出现开裂变色。经可焊接性实验结果可知,镀膜后的LED灯珠的可焊接性满足要求,且点亮率为100%。The solderability test can be performed on the 360 omni-directional coated LED lamp beads and the LED lamp beads coated after covering the back, so as to observe whether there is cracking and discoloration in the appearance after three reflow soldering at 270°C and 10S. The results of the weldability experiment show that the weldability of the coated LED lamp beads meets the requirements, and the lighting rate is 100%.
所述分光探针导电实验是为了测试落料式夹测导通性和落料式底测导通性,实验结果证明落料式底测导通性对应的LED灯珠点亮率为100%。The conduction experiment of the spectroscopic probe is to test the conductivity of the blanking type pinch test and the conductivity of the blanking type bottom test. The experimental results prove that the lighting rate of the LED lamp beads corresponding to the conductivity of the blanking type bottom test is 100%. .
所述冷热冲击实验包括冷冲+红墨水测试和冷冲+硫化测试,其中所述冷热冲击试验的条件是在-40℃、15min和100℃、15min之间,循环600次;所述红墨水试验的条件是150℃、4h,以观察外观是否出现渗透。经实验确定镀膜后的LED灯珠均满足要求。The thermal shock test includes cold punch + red ink test and cold punch + vulcanization test, wherein the conditions of the thermal shock test are between -40°C, 15min and 100°C, 15min, and 600 cycles; The condition of the red ink test is 150°C, 4h, to observe whether there is penetration in the appearance. It is determined by experiments that the coated LED lamp beads all meet the requirements.
本领域的技术人员应理解,上述描述中所示的本发明的实施例只作为举例而并不限制本发明。本发明的目的已经完整并有效地实现。本发明的功能及结构原理已在实施例中展示和说明,在没有背离所述原理下,本发明的实施方式可以有任何变形或修改。It should be understood by those skilled in the art that the embodiments of the present invention shown in the foregoing description are given by way of example only and do not limit the present invention. The objects of the present invention have been fully and effectively accomplished. The functions and structural principles of the present invention have been shown and described in the embodiments, and the embodiments of the present invention may have any deformation or modification without departing from the principles.

Claims (41)

  1. 聚合物膜层,用于在LED基材表面形成,其特征在于,其中所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在该LED基材表面形成的膜层。The polymer film layer is used to form on the surface of the LED substrate, wherein the polymer film layer is made of acrylic ester monomers, fluorine-containing olefin monomers, organosilicon monomers, epoxy One or more of the monomer group consisting of monomers and aromatic ring-containing organic monomers are used as reaction raw materials, and a film layer is formed on the surface of the LED substrate by plasma enhanced chemical vapor deposition.
  2. 根据权利要求1所述的聚合物膜层,其中,所述丙烯酸酯类单体包括长链烷基丙烯酸酯类化合物和/或含氟丙烯酸酯类化合物。The polymer film layer according to claim 1, wherein the acrylate monomer comprises a long-chain alkyl acrylate compound and/or a fluorine-containing acrylate compound.
  3. 根据权利要求2所述的聚合物基团,其中,所述长链烷基丙烯酸酯类化合物中烷基的碳原子数大于等于6;其中所述含氟丙烯酸酯类化合物选自2-(全氟丁基)乙基丙烯酸酯、1H,1H,2H,2H-全氟癸基丙烯酸酯、1H,1H,2H,2H-全氟辛醇丙烯酸酯、(全氟环己基)甲基丙烯酸酯、1H,1H,2H,2H-全氟己基甲基丙烯酸酯、1H,1H,2H,2H-全氟辛基甲基丙烯酸酯和1H,1H,2H,2H-全氟癸基甲基丙烯酸酯中的一种或多种。The polymer group according to claim 2, wherein the number of carbon atoms of the alkyl group in the long-chain alkyl acrylate compound is greater than or equal to 6; wherein the fluorine-containing acrylate compound is selected from 2-(all Fluorobutyl) ethyl acrylate, 1H,1H,2H,2H-perfluorodecyl acrylate, 1H,1H,2H,2H-perfluorooctyl acrylate, (perfluorocyclohexyl)methacrylate, 1H,1H,2H,2H-perfluorohexyl methacrylate, 1H,1H,2H,2H-perfluorooctyl methacrylate and 1H,1H,2H,2H-perfluorodecyl methacrylate one or more of .
  4. 根据权利要求3所述的聚合物膜层,其中,所述长链烷基丙烯酸酯类化合物选自甲基丙烯酸正己酯、甲基丙烯酸正辛酯、甲基丙烯酸癸酯、甲基丙烯酸异癸酯、甲基丙烯酸十二酯、甲基丙烯酸十四酯、甲基丙烯酸十六酯、甲基丙烯酸十八酯、丙烯酸正己酯、丙烯酸正辛酯、丙烯酸癸酯、丙烯酸异癸酯、丙烯酸十二酯、丙烯酸十四酯、丙烯酸十六酯和丙烯酸十八酯中的一种或多种。The polymer film layer according to claim 3, wherein, the long-chain alkyl acrylate compound is selected from n-hexyl methacrylate, n-octyl methacrylate, decyl methacrylate, isodecyl methacrylate ester, lauryl methacrylate, tetradecyl methacrylate, cetyl methacrylate, octadecyl methacrylate, n-hexyl acrylate, n-octyl acrylate, decyl acrylate, isodecyl acrylate, decaacrylate One or more of diester, myristyl acrylate, cetyl acrylate and stearyl acrylate.
  5. 根据权利要求1所述的聚合物膜层,其中,所述含氟烯烃类单体选自四氟乙烯、六氟丙烯、八氟丁烯、全氟壬烯和1H,1H,2H-全氟-1-十二烯中的一种或多种。The polymer film layer according to claim 1, wherein the fluorine-containing olefin monomer is selected from the group consisting of tetrafluoroethylene, hexafluoropropylene, octafluorobutene, perfluorononene and 1H, 1H, 2H-perfluoro - One or more of 1-dodecene.
  6. 根据权利要求1所述的聚合物膜层,其中,所述有机硅类单体选自乙 烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷、1,2,2-三氟乙烯基三苯基硅烷、四甲氧基硅烷、三甲氧基氢硅烷、正辛基三乙氧基硅烷、苯基三乙氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、三乙基乙烯基硅烷、六乙基环三硅氧烷、3-(甲基丙烯酰氧)丙基三甲氧基硅烷、苯基三(三甲基硅氧烷基)硅烷、二苯基二乙氧基硅烷、十二烷基三甲氧基硅烷、二甲氧基硅烷和3-氯丙基三甲氧基硅烷中的一种或多种。The polymer film layer according to claim 1, wherein the organosilicon monomer is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, allyltrimethoxysilane, and allyltrimethoxysilane Ethoxysilane, Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributylketoximosilane, Tetramethyldivinyldisiloxane alkane, dimethylvinylethoxysilane, 1,2,2-trifluorovinyltriphenylsilane, tetramethoxysilane, trimethoxyhydrogensilane, n-octyltriethoxysilane, phenyl Triethoxysilane, Vinyltris(2-methoxyethoxy)silane, Triethylvinylsilane, Hexaethylcyclotrisiloxane, 3-(Methacryloyloxy)propyltrimethoxy phenylsilane, phenyltris(trimethylsiloxy)silane, diphenyldiethoxysilane, dodecyltrimethoxysilane, dimethoxysilane and 3-chloropropyltrimethoxysilane one or more of.
  7. 根据权利要求1所述的聚合物膜层,其中,所述环氧类单体包括3-缩水甘油醚氧基丙基三乙氧基硅烷和/或γ-缩水甘油醚氧丙基三甲氧基硅烷。The polymer film layer according to claim 1, wherein the epoxy monomer comprises 3-glycidyl ether oxypropyl triethoxysilane and/or γ-glycidyl ether oxypropyl trimethoxy silane.
  8. 根据权利要求1所述的聚合物膜层,其中,所述反应原料为由至少一种含双键结构的有机硅类单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,并且所述反应原料中所述多官能度不饱和烃及烃类衍生物所占的质量分数为10%~60%。The polymer film layer according to claim 1, wherein the reaction raw material is composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives The mixture, and the mass fraction of the polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives in the reaction raw material is 10%-60%.
  9. 根据权利要求8所述的聚合物膜层,其中,所述含双键结构的有机硅类单体选自乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷和1,2,2-三氟乙烯基三苯基硅烷中的一种或多种,并且所述多官能度不饱和烃及烃类衍生物选自异戊二烯、二丙烯酸乙二醇酯、1,3-丁二烯、1,4-戊二烯、乙氧基化三羟甲基丙烷三丙烯酸酯、二缩三丙二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、二乙二醇二乙烯基醚、二丙烯酸新戊二醇酯、甲基丙烯酸1,4-丁二醇酯、二甲基丙烯酸1,6-己二醇酯、二甲基丙烯酸乙二醇酯、二甲基丙烯酸二乙二醇酯、二甲基丙烯酸三乙二醇酯、二甲基丙烯酸四乙二醇酯、二甲基丙烯酸1,3-丁二醇酯、二甲基丙烯酸新戊二醇酯、甲基丙烯酸酐、二丙-2-烯基2-亚甲基丁二酸酯、2-亚苄基丙二酸 二丙-2-烯基酯和二烯丙基丙二酸二乙酯中的一种或多种。The polymer film layer according to claim 8, wherein the organosilicon monomer containing a double bond structure is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane , Allyltriethoxysilane, Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-Butenyltrimethylsilane, Vinyltributanoximinosilane, Tetramethyldi One or more of vinyldisiloxane, dimethylvinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane, and the polyfunctional unsaturated hydrocarbon and hydrocarbon Derivatives selected from isoprene, ethylene glycol diacrylate, 1,3-butadiene, 1,4-pentadiene, ethoxylated trimethylolpropane triacrylate, tripropylene glycol Diacrylate, polyethylene glycol diacrylate, 1,6-hexanediol diacrylate, diethylene glycol divinyl ether, neopentyl glycol diacrylate, 1,4-butylene glycol methacrylate ester, 1,6-hexanediol dimethacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate Diol ester, 1,3-butylene glycol dimethacrylate, neopentyl glycol dimethacrylate, methacrylic anhydride, diprop-2-enyl 2-methylene succinate, 2 - one or more of diprop-2-enyl benzylidene malonate and diethyl diallyl malonate.
  10. 根据权利要求1至9中任一所述的聚合物膜层,其中,所述聚合物膜层的静态水接触角大于100°。The polymer film layer according to any one of claims 1 to 9, wherein the static water contact angle of the polymer film layer is greater than 100°.
  11. 根据权利要求1至9中任一所述的聚合物膜层,其中,所述聚合物膜层的厚度为10nm-10μm。The polymer film layer according to any one of claims 1 to 9, wherein the thickness of the polymer film layer is 10 nm-10 μm.
  12. 聚合物膜层的制备方法,其特征在于,包括步骤:The preparation method of polymer film layer is characterized in that, comprises the steps:
    在PECVD装置内由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在LED基材的表面形成该聚合物膜层。In the PECVD device, one or more of the monomer groups composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers are used as The reaction raw materials are used to form the polymer film layer on the surface of the LED substrate by plasma enhanced chemical vapor deposition.
  13. 根据权利要求12所述的制备方法,其中,在通入该反应原料之前,对该PECVD装置抽真空,并通入等离子源气体,其中该等离子源气体是惰性气体。The preparation method according to claim 12, wherein, before feeding the reaction raw materials, the PECVD device is evacuated, and a plasma source gas is fed, wherein the plasma source gas is an inert gas.
  14. 根据权利要求12所述的制备方法,其中,在形成该聚合物膜层之后,停止等离子体放电和抽真空,以取出形成有该聚合物膜层的该LED基材。The preparation method according to claim 12, wherein, after forming the polymer film layer, stopping plasma discharge and vacuuming, so as to take out the LED substrate formed with the polymer film layer.
  15. 根据权利要求12至14中任一所述的制备方法,其中,该PECVD装置的反应腔室的温度控制为25~60℃。The preparation method according to any one of claims 12-14, wherein the temperature of the reaction chamber of the PECVD device is controlled at 25-60°C.
  16. 根据权利要求12至14任一所述的制备方法,其中,该聚合物膜层的形成过程包括一预处理阶段和一镀膜阶段,在该预处理阶段,等离子体的放电功率为100~600W,持续放电时间60~1800s,然后进入该镀膜阶段时,调整该等离子体的放电功率为10~200W,持续放电时间600~36000s。The preparation method according to any one of claims 12 to 14, wherein the forming process of the polymer film layer includes a pretreatment stage and a film coating stage, and in the pretreatment stage, the discharge power of the plasma is 100-600W, The continuous discharge time is 60-1800s, and then when entering the coating stage, the discharge power of the plasma is adjusted to 10-200W, and the continuous discharge time is 600-36000s.
  17. 根据权利要求12至14任一所述的制备方法,其中,该聚合物膜层 的形成过程包括预处理阶段和镀膜阶段,该预处理阶段的等离子体放电功率为150~600W,持续放电时间为60~1800s,然后进入该镀膜阶段,该镀膜阶段为脉冲放电,功率为10~300W,时间为600s~36000s,脉冲放电的频率为20Hz-20KHz,脉冲的占空比为1:1~1:500。The preparation method according to any one of claims 12 to 14, wherein the formation process of the polymer film layer includes a pretreatment stage and a film coating stage, the plasma discharge power of the pretreatment stage is 150-600W, and the continuous discharge time is 60~1800s, then enter the coating stage, the coating stage is pulse discharge, the power is 10~300W, the time is 600s~36000s, the frequency of pulse discharge is 20Hz-20KHz, and the pulse duty ratio is 1:1~1: 500.
  18. 具有聚合物膜层的LED产品,其特征在于,在LED基材的表面的至少一部分具有权利要求1-11中任意一项所述聚合物膜层。The LED product with a polymer film layer is characterized in that at least a part of the surface of the LED substrate has the polymer film layer according to any one of claims 1-11.
  19. 根据权利要求18所述的LED产品,其中,所述LED基材为LED成品或LED半成品。The LED product according to claim 18, wherein the LED substrate is a finished LED product or a semi-finished LED product.
  20. 根据权利要求18或19的LED产品,其中,所述LED产品在防硫化测试中未出现变黑。The LED product according to claim 18 or 19, wherein said LED product does not appear blackened in the anti-sulfurization test.
  21. 防护式LED封装方法,其特征在于,包括步骤:The protective LED packaging method is characterized in that it comprises the steps of:
    S110:将发光元件可导通地固定于LED支架;S110: Conductively fixing the light-emitting element to the LED bracket;
    S120:点胶于该发光元件和该LED支架以形成封装胶层,以制成LED半成品;以及S120: dispensing glue on the light-emitting element and the LED bracket to form an encapsulation glue layer, so as to make a semi-finished LED product; and
    S130:通过等离子体增强化学气相沉积法,在该LED半成品的表面沉积形成聚合物膜层,以制成防护式LED半成品。S130: Deposit and form a polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition, so as to manufacture a protective LED semi-finished product.
  22. 如权利要求21所述的防护式LED封装方法,其中,该聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过该等离子体增强化学气相沉积法在该LED半成品的表面形成的膜层。The protective LED packaging method according to claim 21, wherein the polymer film layer is made of acrylic monomers, fluorine-containing olefin monomers, silicone-based monomers, epoxy-based monomers, and aromatic One or more of the monomer groups composed of ring organic monomers are used as reaction raw materials, and the film layer is formed on the surface of the LED semi-finished product by the plasma enhanced chemical vapor deposition method.
  23. 如权利要求22所述的防护式LED封装方法,其中,该反应原料为由至少一种含双键结构的有机硅类单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,并且该反应原料中该多官能度不饱和烃及烃类衍生物 所占的质量分数为10%~60%。The protective LED packaging method according to claim 22, wherein the reaction raw material is composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives The mixture, and the mass fraction of the multifunctional unsaturated hydrocarbon and hydrocarbon derivatives in the reaction raw material is 10%-60%.
  24. 如权利要求21至23中任一所述的防护式LED封装方法,进一步包括步骤:The protective LED packaging method according to any one of claims 21 to 23, further comprising the steps of:
    S140:将该防护式LED半成品切割成单颗,以获得防护式LED成品。S140 : cutting the semi-finished protective LED into single pieces to obtain finished protective LED products.
  25. 如权利要求21所述的防护式LED封装方法,其中,所述步骤S130,包括步骤:The protective LED packaging method according to claim 21, wherein said step S130 includes the steps of:
    S131:前处理,在放置该LED半成品于镀膜设备的镀膜腔室以抽真空后,通入等离子源气体;S131: pre-treatment, after placing the LED semi-finished product in the coating chamber of the coating equipment for vacuuming, injecting plasma source gas;
    S132:沉积,在该镀膜设备由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在该LED半成品的表面形成该聚合物膜层;以及S132: Deposition, one of the monomer groups composed of acrylate monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and aromatic ring-containing organic monomers in the coating equipment or more as reaction raw materials, forming the polymer film layer on the surface of the LED semi-finished product by plasma enhanced chemical vapor deposition; and
    S133:后处理,停止等离子体放电和抽真空,以取出形成有该聚合物膜层的该LED半成品。S133: post-processing, stop the plasma discharge and vacuumize, so as to take out the LED semi-finished product formed with the polymer film layer.
  26. 如权利要求25所述的防护式LED封装方法,其中,所述步骤S130,进一步包括步骤:The protective LED packaging method according to claim 25, wherein said step S130 further comprises the steps of:
    在所述步骤S131之前,对该LED半成品的背表面进行遮蔽处理;和Before the step S131, the back surface of the LED semi-finished product is shielded; and
    在所述步骤S133之后,对该防护式LED半成品的背表面进行去遮蔽处理。After the step S133, the back surface of the protective LED semi-finished product is de-shielded.
  27. 如权利要求26所述的防护式LED封装方法,其中,先将遮蔽后的该LED半成品摆盘至该镀膜设备的置物盘,再通过干燥柜对摆盘后的该LED半成品进行干燥处理,以在获得干燥后的该LED半成品后再放置于该镀膜设备的所述镀膜腔室内。The protective LED packaging method as claimed in claim 26, wherein, first place the shaded LED semi-finished product on the storage tray of the coating equipment, and then dry the placed LED semi-finished product through a drying cabinet, so that After the dried LED semi-finished product is obtained, it is placed in the coating chamber of the coating equipment.
  28. 如权利要求21至23、25至27中任一所述的防护式LED封装方法, 其中,所述步骤S110,包括步骤:The protective LED packaging method according to any one of claims 21 to 23, 25 to 27, wherein the step S110 includes the steps of:
    使用平面锡膏印刷机和3D印刷钢网在EMC支架的碗杯内印刷锡膏;Use a flat solder paste printer and a 3D printing stencil to print solder paste in the bowl of the EMC bracket;
    将印刷好的该EMC支架在LED固晶机上进行固晶作业,以将该发光元件固定于该EMC支架;以及The printed EMC bracket is carried out on the LED crystal bonding machine for solid crystal operation, so that the light-emitting element is fixed on the EMC bracket; and
    通过回流焊机台进行回流焊作业,以可导通地连接该发光元件和该EMC支架。A reflow soldering operation is performed by a reflow soldering machine, so as to conductively connect the light emitting element and the EMC bracket.
  29. 防护式LED封装方法,其特征在于,包括步骤:The protective LED packaging method is characterized in that it comprises the steps of:
    通过等离子体增强化学气相沉积法,在LED支架的镀银表面沉积形成聚合物膜层;By plasma-enhanced chemical vapor deposition, a polymer film is deposited on the silver-plated surface of the LED bracket;
    将发光元件可导通地固定于镀有该聚合物膜层的该LED支架;Conductively fixing the light-emitting element to the LED bracket coated with the polymer film layer;
    点胶于该发光元件和该LED支架以形成封装胶层,以制成防护式LED半成品;以及Dispensing glue on the light-emitting element and the LED bracket to form an encapsulation glue layer to make a protective LED semi-finished product; and
    将该防护式LED半成品切割成单颗,以获得防护式LED成品。The protected LED semi-finished product is cut into individual pieces to obtain a protected LED finished product.
  30. 防护式LED封装方法,其特征在于,包括步骤:The protective LED packaging method is characterized in that it comprises the steps of:
    将发光元件可导通地固定于LED支架;Conductively fixing the light-emitting element to the LED bracket;
    通过等离子体增强化学气相沉积法,在该LED支架的镀银表面和该发光元件的表面沉积形成聚合物膜层;Depositing a polymer film layer on the silver-plated surface of the LED bracket and the surface of the light-emitting element by plasma-enhanced chemical vapor deposition;
    点胶于该聚合物膜层以形成封装胶层,以制成防护式LED半成品;以及Dispensing glue on the polymer film layer to form an encapsulation layer to make a protective LED semi-finished product; and
    将该防护式LED半成品切割成单颗,以获得防护式LED成品。The protected LED semi-finished product is cut into individual pieces to obtain a protected LED finished product.
  31. 防护式LED灯珠,其特征在于,包括:The protective LED lamp bead is characterized in that it includes:
    LED支架,其中所述LED支架具有镀银表面;LED brackets, wherein the LED brackets have a silver-plated surface;
    发光元件,其中所述发光元件被可导通地固定于所述LED支架的所述镀银表面;a light emitting element, wherein the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
    封装胶层,其中所述封装胶层包覆地封装所述发光元件;以及an encapsulating adhesive layer, wherein the encapsulating adhesive layer encapsulates the light-emitting element; and
    聚合物膜层,其中所述聚合物膜层被镀于所述封装胶层的外表面。A polymer film layer, wherein the polymer film layer is plated on the outer surface of the packaging adhesive layer.
  32. 如权利要求31所述的防护式LED灯珠,其中,所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在所述封装胶层的所述外表面形成的膜层。The protective LED lamp bead according to claim 31, wherein the polymer film layer is made of acrylic monomers, fluorine-containing olefin monomers, silicone-based monomers, epoxy-based monomers, and One or more of the monomer groups composed of aromatic ring organic monomers are used as reaction raw materials, and a film layer is formed on the outer surface of the packaging adhesive layer by plasma enhanced chemical vapor deposition.
  33. 如权利要求32所述的防护式LED灯珠,其中,所述反应原料为由至少一种含双键结构的有机硅类单体和至少一种多官能度不饱和烃及烃类衍生物组成的混合物,并且所述反应原料中的所述多官能度不饱和烃及烃类衍生物所占的质量分数为10%~60%。The protective LED lamp bead according to claim 32, wherein the reaction raw material is composed of at least one organosilicon monomer containing a double bond structure and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivatives and the mass fraction of the polyfunctional unsaturated hydrocarbons and hydrocarbon derivatives in the reaction raw materials is 10% to 60%.
  34. 如权利要求33所述的防护式LED灯珠,其中,所述含双键结构的有机硅类单体选自乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、甲基乙烯基二乙氧基硅烷、乙烯基三甲基硅烷、3-丁烯基三甲基硅烷、乙烯基三丁酮肟基硅烷、四甲基二乙烯基二硅氧烷、二甲基乙烯基乙氧基硅烷和1,2,2-三氟乙烯基三苯基硅烷中的一种或多种,并且所述多官能度不饱和烃及烃类衍生物选自异戊二烯、二丙烯酸乙二醇酯、1,3-丁二烯、1,4-戊二烯、乙氧基化三羟甲基丙烷三丙烯酸酯、二缩三丙二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、二乙二醇二乙烯基醚、二丙烯酸新戊二醇酯、甲基丙烯酸1,4-丁二醇酯、二甲基丙烯酸1,6-己二醇酯、二甲基丙烯酸乙二醇酯、二甲基丙烯酸二乙二醇酯、二甲基丙烯酸三乙二醇酯、二甲基丙烯酸四乙二醇酯、二甲基丙烯酸1,3-丁二醇酯、二甲基丙烯酸新戊二醇酯、甲基丙烯酸酐、二丙-2-烯基2-亚甲基丁二酸酯、2-亚苄基丙二酸二丙-2-烯基酯和二烯丙基丙二酸二乙酯中的一种或多种。The protective LED lamp bead according to claim 33, wherein, the organosilicon monomer containing a double bond structure is selected from vinyltriethoxysilane, vinyltrimethoxysilane, allyltrimethoxy Silane, Allyltriethoxysilane, Methylvinyldiethoxysilane, Vinyltrimethylsilane, 3-butenyltrimethylsilane, Vinyltributylketoximosilane, Tetramethyl One or more of divinyldisiloxane, dimethylvinylethoxysilane and 1,2,2-trifluorovinyltriphenylsilane, and the polyfunctional unsaturated hydrocarbon and Hydrocarbon derivatives selected from isoprene, ethylene glycol diacrylate, 1,3-butadiene, 1,4-pentadiene, ethoxylated trimethylolpropane triacrylate, trimethylolpropane Propylene glycol diacrylate, polyethylene glycol diacrylate, 1,6-hexanediol diacrylate, diethylene glycol divinyl ether, neopentyl glycol diacrylate, 1,4-butylene methacrylate Alcohol ester, 1,6-hexanediol dimethacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate Ethylene glycol ester, 1,3-butylene glycol dimethacrylate, neopentyl glycol dimethacrylate, methacrylic anhydride, diprop-2-enyl 2-methylene succinate, One or more of diprop-2-enyl 2-benzylidene malonate and diethyl diallyl malonate.
  35. 如权利要求31至34中任一所述的防护式LED灯珠,其中,所述聚合物膜层的静态水接触角大于100°。The protective LED lamp bead according to any one of claims 31 to 34, wherein the static water contact angle of the polymer film layer is greater than 100°.
  36. 如权利要求31至34中任一所述的防护式LED灯珠,其中,所述聚合物膜层的厚度为10nm-10μm。The protective LED lamp bead according to any one of claims 31 to 34, wherein the thickness of the polymer film layer is 10 nm-10 μm.
  37. 如权利要求31至34中任一所述的防护式LED灯珠,其中,所述LED支架为EMC支架。The protective LED lamp bead according to any one of claims 31 to 34, wherein the LED bracket is an EMC bracket.
  38. 防护式LED灯珠,其特征在于,包括:The protective LED lamp bead is characterized in that it includes:
    LED支架,其中所述LED支架具有镀银表面;LED brackets, wherein the LED brackets have a silver-plated surface;
    发光元件,其中所述发光元件被可导通地固定于所述LED支架的所述镀银表面;a light emitting element, wherein the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
    封装胶层,其中所述封装胶层包覆地封装所述发光元件;以及an encapsulating adhesive layer, wherein the encapsulating adhesive layer encapsulates the light-emitting element; and
    聚合物膜层,其中所述聚合物膜层被镀于所述LED支架的所述镀银表面,并且所述聚合物膜层位于所述LED支架的所述镀银表面与所述发光元件和所述封装胶层之间。A polymer film layer, wherein the polymer film layer is plated on the silver-plated surface of the LED bracket, and the polymer film layer is located on the silver-plated surface of the LED bracket and the light-emitting element and between the encapsulation layers.
  39. 如权利要求38所述的防护式LED灯珠,其中,所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在所述封装胶层的所述外表面形成的膜层。The protective LED lamp bead according to claim 38, wherein the polymer film layer is made of acrylic monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and One or more of the monomer groups composed of aromatic ring organic monomers are used as reaction raw materials, and a film layer is formed on the outer surface of the packaging adhesive layer by plasma enhanced chemical vapor deposition.
  40. 防护式LED灯珠,其特征在于,包括:The protective LED lamp bead is characterized in that it includes:
    LED支架,其中所述LED支架具有镀银表面;LED brackets, wherein the LED brackets have a silver-plated surface;
    发光元件,其中所述发光元件被可导通地固定于所述LED支架的所述镀银表面;a light emitting element, wherein the light emitting element is conductively fixed to the silver-plated surface of the LED bracket;
    封装胶层,其中所述封装胶层包覆地封装所述发光元件;以及an encapsulating adhesive layer, wherein the encapsulating adhesive layer encapsulates the light-emitting element; and
    聚合物膜层,其中所述聚合物膜层被镀于所述LED支架的所述镀银表面和所述发光元件的表面,并且所述聚合物膜层位于所述封装胶层与所述发光元件和所述LED支架的所述镀银表面之间。A polymer film layer, wherein the polymer film layer is plated on the silver-plated surface of the LED bracket and the surface of the light-emitting element, and the polymer film layer is located between the encapsulation adhesive layer and the light-emitting component and the silvered surface of the LED holder.
  41. 如权利要求40所述的防护式LED灯珠,其中,所述聚合物膜层是以由丙烯酸酯类单体、含氟烯烃类单体、有机硅类单体、环氧类单体和含芳环 有机物类单体组成的单体组中的一种或多种作为反应原料,通过等离子体增强化学气相沉积法在所述封装胶层的所述外表面形成的膜层。The protective LED lamp bead according to claim 40, wherein the polymer film layer is made of acrylic monomers, fluorine-containing olefin monomers, silicone monomers, epoxy monomers and One or more of the monomer groups composed of aromatic ring organic monomers are used as reaction raw materials, and a film layer is formed on the outer surface of the packaging adhesive layer by plasma enhanced chemical vapor deposition.
PCT/CN2022/108070 2021-08-05 2022-07-27 Polymer film layer, preparation method therefor, and led product WO2023011270A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1563243A (en) * 2004-03-25 2005-01-12 复旦大学 High thermal conductive and high air-tightness packaging material of film and preparation method
EP1571475A1 (en) * 2004-03-04 2005-09-07 C.R.F. Società Consortile per Azioni Fiber-type electro-optical diode
CN103068569A (en) * 2010-06-15 2013-04-24 株式会社大赛璐 Laminated film, manufacturing method for same, and electronic device
CN106711354A (en) * 2016-12-02 2017-05-24 武汉华星光电技术有限公司 Packaging method for organic semiconductor device
CN111570216A (en) * 2020-04-27 2020-08-25 江苏菲沃泰纳米科技有限公司 Composite protective film layer with silane transition layer and preparation method and product thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1571475A1 (en) * 2004-03-04 2005-09-07 C.R.F. Società Consortile per Azioni Fiber-type electro-optical diode
CN1563243A (en) * 2004-03-25 2005-01-12 复旦大学 High thermal conductive and high air-tightness packaging material of film and preparation method
CN103068569A (en) * 2010-06-15 2013-04-24 株式会社大赛璐 Laminated film, manufacturing method for same, and electronic device
CN106711354A (en) * 2016-12-02 2017-05-24 武汉华星光电技术有限公司 Packaging method for organic semiconductor device
CN111570216A (en) * 2020-04-27 2020-08-25 江苏菲沃泰纳米科技有限公司 Composite protective film layer with silane transition layer and preparation method and product thereof

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