WO2022259623A1 - 被覆工具および切削工具 - Google Patents
被覆工具および切削工具 Download PDFInfo
- Publication number
- WO2022259623A1 WO2022259623A1 PCT/JP2022/005848 JP2022005848W WO2022259623A1 WO 2022259623 A1 WO2022259623 A1 WO 2022259623A1 JP 2022005848 W JP2022005848 W JP 2022005848W WO 2022259623 A1 WO2022259623 A1 WO 2022259623A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- particles
- tool
- less
- binder phase
- Prior art date
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 52
- 239000002245 particle Substances 0.000 claims abstract description 58
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 55
- 239000010432 diamond Substances 0.000 claims abstract description 55
- 239000011230 binding agent Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 106
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- 239000002585 base Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000004381 surface treatment Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000012670 alkaline solution Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000003754 machining Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000009210 therapy by ultrasound Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000012790 confirmation Methods 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 238000004453 electron probe microanalysis Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- AWDBHOZBRXWRKS-UHFFFAOYSA-N tetrapotassium;iron(6+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+6].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] AWDBHOZBRXWRKS-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/148—Composition of the cutting inserts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/10—Coatings
- B23B2228/105—Coatings with specified thickness
Definitions
- the present disclosure relates to coated tools and cutting tools.
- Patent Document 1 describes the maximum height difference of the unevenness at the interface between the tool substrate and the diamond film, the maximum distance between the unevenness, the length of the region where the binder phase is removed, and A cutting tool having a defined average grain size of diamond crystals is disclosed.
- Patent Document 2 in order to perform machining with a long tool life even in high-efficiency machining of difficult-to-cut materials, the diamond layer near the base material crystals grow in random directions. A diamond coated tool with grains is disclosed.
- a coated tool has a substrate made of a WC-based cemented carbide having WC grains and a binder phase, and a diamond film overlying the substrate.
- the substrate In a cross-section perpendicular to the surface of the coated tool, the substrate contains less of the binder phase at the surface of the substrate than at the center of the substrate.
- the number of free WC particles present per 10 ⁇ m of interface length is 4 or less.
- a cutting tool according to one non-limiting aspect of the present disclosure has the above-described coated tool.
- FIG. 1 is a cross-sectional schematic diagram of a coated tool in accordance with one non-limiting aspect of the present disclosure
- FIG. 1 is a schematic diagram showing a film forming apparatus used for manufacturing a coated tool in one non-limiting aspect of the present disclosure
- FIG. 1 is a side view of a cutting tool (end mill) according to one non-limiting aspect of the present disclosure
- FIG. 4 is a cross-sectional view of the cutting tool shown in FIG. 3 taken along line IV-IV.
- 1 is a side view of a cutting tool (drill) according to one non-limiting aspect of the present disclosure
- FIG. 6 is a cross-sectional view of the cutting tool shown in FIG. 5 taken along the line VI-VI.
- FIG. 1 is a cross-sectional schematic diagram of a coated tool in accordance with one non-limiting aspect of the present disclosure
- FIG. 1 is a schematic diagram showing a film forming apparatus used for manufacturing a coated tool in one non-limiting aspect of the present disclosure
- FIG. 1 is
- FIG. 1 is a perspective view of a cutting tool (insert drill) according to one non-limiting aspect of the present disclosure
- FIG. FIG. 8 is a perspective view of a cutting insert in the cutting tool shown in FIG. 7
- 9 is a sectional view of the IX-IX section of the cutting insert shown in FIG. 8.
- the non-limiting coated tool 1 of the present disclosure will be described in detail with reference to the drawings.
- the coated tool 1 may therefore comprise any components not shown in the referenced figures.
- the dimensions of the members in the drawings do not faithfully represent the actual dimensions of the constituent members, the dimensional ratios of the respective members, and the like. These points are the same for the cutting tool described later.
- the coated tool 1 may have a substrate 3 and a diamond film 5 located on the substrate 3, as in a non-limiting example shown in FIG.
- the substrate 3 may be made of a WC-based cemented carbide 7.
- the WC-based cemented carbide 7 may simply be called the cemented carbide 7 .
- the cemented carbide 7 may have WC (tungsten carbide) particles 9 and a binder phase 11 .
- the number of WC particles 9 may be plural. WC particles 9 may also be referred to as hard particles.
- the cemented carbide 7 may have a hard phase containing a plurality of WC grains 9 .
- the hard phase may contain at least one selected from the group of carbides, nitrides and carbonitrides of Groups 4, 5 and 6 metals other than WC.
- the average particle size of WC particles 9 is not limited to a specific value.
- the average particle diameter of the WC particles 9 may be 0.3 ⁇ m or more and 2.0 ⁇ m or less.
- the average particle size of the WC particles 9 may be measured by image analysis.
- the equivalent circle diameter may be the average particle diameter of the WC particles 9 .
- the average particle size of the WC particles 9 may be measured by the following procedure. First, using a scanning electron microscope (SEM), a cross section of the substrate 3 may be observed at a magnification of 3000 to 5000 times to obtain an SEM image. At least 50 or more WC particles 9 in this SEM image may be specified and extracted. After that, the average particle diameter of the WC particles 9 may be obtained by calculating the equivalent circle diameter using image analysis software ImageJ (1.52).
- the binding phase 11 may have the function of binding adjacent WC particles 9 together. In addition, the binding phase 11 may have a function of binding adjacent hard phases.
- the binding phase 11 may be made of an iron group metal such as Co (cobalt) or Ni (nickel).
- the diamond film 5 may cover the entire surface 13 of the substrate 3, or may cover only a portion thereof. When the diamond film 5 covers only part of the surface 13 of the substrate 3 , it can be said that the diamond film 5 is located on at least part of the substrate 3 .
- the diamond film 5 may be deposited by a chemical vapor deposition (CVD) method.
- CVD chemical vapor deposition
- diamond film 5 may be a CVD film.
- the diamond film 5 is not limited to a specific thickness.
- the thickness of the diamond film 5 may be set to 3 ⁇ m or more and 45 ⁇ m or less.
- the thickness of the diamond film 5 may be measured by cross-sectional observation using an electron microscope, for example. Electron microscopes may include, for example, SEM.
- the content of the binder phase 11 may be less in the surface 13 of the substrate 3 than in the central portion of the substrate 3 .
- the “surface 13 of the substrate 3” may include not only the surface 13 but also the area in the vicinity thereof. That is, the “surface 13 of the base 3 ” may be rephrased as the vicinity of the surface of the base 3 .
- Near the surface may mean a region up to 10 ⁇ m deep from the surface 13 of the substrate 3 . Alternatively, it may be a region of depth in the film thickness direction of the diamond film 5 from the WC grain 9 at the top of the substrate 3 to the deepest bottom of the substrate 3 .
- the content of the binder phase 11 being small means, for example, that the content of the binder phase 11 contained per area in the cross section of the substrate 3 is small. In addition, you may evaluate content of the binding phase 11 in a straight line by what is called a line analysis.
- the "central portion of the base 3" may be rephrased as the central portion of the base 3 in the thickness direction. Also, the “central portion of the base 3” may be, for example, a portion including the rotation axis O described later (see FIG. 4, etc.). Confirmation that the content of the binder phase 11 is relatively low on the surface 13 of the substrate 3 may be performed by, for example, wavelength dispersive EPMA (WDS).
- WDS wavelength dispersive EPMA
- the number of the free WC grains 15 existing per 10 ⁇ m of the interface length is 4 or less. There may be.
- the interface length may be the length of a straight line drawn along the surface 13 of the substrate 3 .
- the free WC particles 15 may be measured by cross-sectional observation using an electron microscope, for example.
- the cross section may be a mirror surface.
- the number of free WC particles 15 may be 0 or more and 2 or less per 10 ⁇ m of interface length.
- the substrate 3 has a region S2 on the surface 13 of the substrate 3 in which the content of the binder phase 11 is 15% or less when the content of the binder phase 11 in the central portion of the substrate 3 is 100%. good too.
- the lower limit of the content of the binder phase 11 in the region S2 may be 0%. Confirmation that the content of the binder phase 11 is 15% or less on the surface 13 of the substrate 3 can be confirmed by, for example, wavelength dispersive EPMA (WDS), from the center of the substrate 3 toward the surface 13 of the substrate 3. Analysis may be performed.
- WDS wavelength dispersive EPMA
- a cross-sectional observation was performed by EPMA (WDS), and an image obtained in an observation area of 20 ⁇ m deep inside the substrate 3 from the interface between the diamond film 5 and the substrate 3 and 20 ⁇ m in the direction parallel to the surface 13 of the substrate 3.
- the depth from the interface between the diamond film 5 and the substrate 3 is measured at a plurality of locations (for example, 6 locations) for the region with a small amount of the binder phase 11 observed inside (15% or less region), and this value is calculated.
- the depth (length) of the region S2 in which the content of the binder phase 11 is small may be obtained by averaging.
- the amount of the binder phase 11 may be obtained by measuring the cross section of the sample at multiple locations (eg, 6 locations) by Auger Electron Spectroscopy (AES) and averaging the values. .
- AES Auger Electron Spectroscopy
- the length I of the region S2 in which the content of the binder phase 11 is small may be 1.0 ⁇ m or more and 5.0 ⁇ m or less.
- the length I of the region S2 is the length in the direction perpendicular to the surface of the substrate 3 .
- the length I of the region S2 in which the content of the binding phase 11 is low changes due to the surface treatment described later, for example, etching treatment using an acid solution or an alkaline solution.
- etching treatment using an acid solution or an alkaline solution.
- the length I is 1.0 ⁇ m or more, a good diamond film 5 can be formed, and the adhesion of the diamond film 5 is less likely to decrease.
- the length I is 5.0 ⁇ m or less, the interface between the substrate 3 and the diamond film 5 is not fragile, cracks are less likely to occur on the substrate 3 side, and the diamond film 5 is less likely to be peeled off. Therefore, the value of length I may be 1.0 ⁇ m or more and 5.0 ⁇ m or less.
- the region S2 in which the content of the binder phase 11 is small may be rephrased as the region S2 from which the binder phase 11 of the substrate 3 is removed.
- Removal of the binding phase 11 may be achieved by, for example, removing the binding phase 11 contained in the substrate 3 by surface treatment with an acid solution. After the surface treatment, the substrate 3 is heated when the diamond film 5 is formed. Due to this heating, the binding phase 11 may exist again in a part of the region from which the binding phase 11 was once removed. Therefore, the length I of the region S2 of the substrate 3 from which the binder phase 11 has been removed in the coated tool 1 may be shorter than the length of the region from which the binder phase 11 has been removed by the acid solution.
- Confirmation that the content of the binder phase 11 is relatively low in the region S2 may be performed in the same manner as confirmation of the content of the binder phase 11 on the surface 13 of the substrate 3 .
- the region S2 may have a plurality of WC grains 9 and voids located between adjacent WC grains 9 .
- the average particle size of the WC particles 9 in the interface region S1 may be smaller than the average particle size of the WC particles 9 inside the base 3 than in the interface region S1. Specifically, the average particle size of the WC particles in the interface region S1 may be smaller than 0.7 when the average particle size of the WC particles inside the substrate 3 is 1. In this case, the diamond film 5 tends to exhibit good adhesion. If the size of the WC grains 9 present in the interface region S1 is relatively large, the adhesion of the diamond film 5 may be adversely affected.
- Patent Document 1 describes a step of subjecting a cemented carbide tool after grinding to an alkali etching treatment and an acid etching treatment, but in this method, after the acid etching treatment, unstable WC particles and free WC particles remain.
- sonication in a solution containing diamond powder was later described to promote diamond nucleation, but the interface unstable WC grains that most affect the adhesion of the diamond film to the substrate have been described. and removing free WC particles.
- Patent Document 2 describes a step of sandblasting in addition to the etching treatment, but when blasting a cemented carbide base material with abrasive grains, the blasting material penetrates between hard particles and the binding phase. , become a factor that lowers the adhesion strength in the subsequent diamond film formation.
- the substrate When manufacturing a coated tool, the substrate may be made first. First, raw material powders such as WC powder, metal Co powder, Cr 3 C 2 (chromium carbide) powder may be mixed to obtain a mixed powder. Next, this mixed powder may be molded into a predetermined tool shape by a known molding method such as press molding, cast molding, extrusion molding, or cold isostatic press molding to obtain a molded body. Then, the obtained compact may be fired in a vacuum or in a non-oxidizing atmosphere to obtain a tool-shaped substrate.
- raw material powders such as WC powder, metal Co powder, Cr 3 C 2 (chromium carbide) powder
- this mixed powder may be molded into a predetermined tool shape by a known molding method such as press molding, cast molding, extrusion molding, or cold isostatic press molding to obtain a molded body. Then, the obtained compact may be fired in a vacuum or in a non-oxidizing atmosphere to obtain a tool-shaped substrate.
- the surface of the substrate may be surface-treated using an acid solution or an alkaline solution.
- the substrate before surface treatment may be called an untreated substrate, and the substrate after surface treatment may be called a substrate.
- the untreated substrate may be immersed in an alkaline solution and an acid solution in that order for etching.
- the binder phase content tends to be lower at the surface of the substrate than at the central portion of the substrate.
- alkaline solutions examples include Murakami's reagent (potassium hydroxide + potassium hexacyanoferrate(III) + pure water mixed at a mixing ratio of 10 (g): 10 (g): 100 (ml)).
- the immersion time of the untreated substrate in the alkaline solution may be 20 minutes or more and 50 minutes or less.
- examples of acid solutions include hydrochloric acid, persulfuric acid, and nitric acid.
- the immersion time of the untreated substrate in the acid solution may be 5 minutes or more and 30 minutes or less in the case of nitric acid (concentration 1 mol/L), for example.
- the surface treatment with an acid solution removes the binder phase in the substrate from the surface of the substrate. The longer the surface treatment, the deeper the binder phase is removed.
- the length I of the region with less binder phase after the diamond film is formed tends to be 1.0 ⁇ m or more. Also, if the treatment time is 30 minutes or less, the length I of the region with little binder phase after the formation of the diamond film tends to be 5.0 ⁇ m or less. In a coated tool having such a range of length I of a region with a small amount of binder phase, the substrate and the diamond film are likely to adhere firmly to each other.
- the surface treatment with an acid solution may be performed in an ultrasonic cleaner under the following conditions. Output: 80W or more, 250W or less Time: 5 minutes or more, 30 minutes or less
- treatment using an ultrasonic cleaner may be performed.
- This ultrasonic treatment can remove WC particles that are generated by the surface treatment described above and later become free WC particles.
- the number of free WC particles tends to be 4 or less per 10 ⁇ m of interface length.
- distilled water or an organic solvent may be prepared and the untreated substrate may be immersed in a negative pressure vessel. Then, for example, ultrasonic treatment may be performed under the following ultrasonic cleaning conditions.
- Ultrasonic disperser Output 600 W or more Time: 10 minutes or more, 120 minutes or less Negative pressure conditions: 0.1 to 0.9 atmospheres
- a treatment liquid containing diamond abrasive grains in an organic solvent may be prepared and the untreated substrate may be immersed.
- the average particle size of the diamond abrasive grains may be 0.5 ⁇ m or more and 10 ⁇ m or less.
- the average particle size of diamond abrasive grains may be a value measured by a laser scattering method.
- the ultrasonic treatment may be performed while the untreated substrate is immersed in the treatment liquid.
- Ultrasonic treatment may be performed, for example, under the following conditions. Output: 250W or more, 500W or less Time: 5 minutes or more, 30 minutes or less
- the diamond film may be formed by a hot filament CVD method. An example of a film formation method will be described with reference to FIG.
- the film forming apparatus 101 may have a reaction chamber 103 as a non-limiting example shown in FIG.
- a sample stage 105 on which the substrate 3 is set may be provided inside the reaction chamber 103 .
- the base body 3 When the base body 3 is bar-shaped, the base body 3 may be set in an upright state with the tip facing upward.
- a heater 107 such as a tungsten filament may be arranged around the substrate 3 .
- the heater 107 may be electrically connected to a power supply 109 located outside the reaction chamber 103 .
- the heater 107 may be supported by the support 111 .
- a plurality of heaters 107 may be provided.
- the heaters 107 may be arranged so as to sandwich the substrate 3 .
- the temperature of the substrate 3 set on the sample stage 105 may be adjusted by adjusting the arrangement of the heater 107 and the current value supplied to the heater 107 .
- the temperature of the substrate 3 may be adjusted to, for example, 850° C. or higher and 930° C. or lower.
- the reaction chamber 103 may be provided with a gas supply port 113 and a gas exhaust port 115 .
- a reaction gas (deposition gas) may be supplied from the gas supply port 113 into the reaction chamber 103 which is evacuated.
- the reactant gas may contain, for example, hydrogen gas and methane gas.
- the coated tool 1 may be obtained by forming the diamond film 5 by blowing the reaction gas onto the substrate 3 .
- the manufacturing method described above is an example of a method for manufacturing the coated tool 1. Therefore, it cannot be overemphasized that the covered tool 1 is not limited to what was produced by said manufacturing method.
- the cutting tool 31 may have a coated tool 1, as non-limiting examples shown in FIGS. In this case, since the coated tool 1 has a long life, stable cutting can be performed for a long period of time.
- the cutting tool 31 may be an end mill 41, as a non-limiting example shown in FIGS.
- the end mill 41 may have a bar shape extending along the rotation axis O from the first end 41a to the second end 41b.
- the end mill 41 may have a shank portion 43 and a cutting portion 45 located closer to the first end 41a than the shank portion 43 is.
- the cutting portion 45 includes a first edge 47 (bottom edge) positioned on the side of the first end 41a, a second edge 49 (peripheral edge) extending toward the second end 41b, and a It may have an extended groove 51 and a gash 53 located between the first blade 47 and the groove 51 .
- the cutting tool 31 may be a drill 61, as a non-limiting example shown in FIGS.
- the drill 61 may have a bar shape extending along the rotation axis O from the first end 61a to the second end 61b.
- the drill 61 may have a shank portion 63 and a cutting portion 65 located closer to the first end 61a than the shank portion 63 is.
- the cutting portion 65 may have a cutting edge 67 located on the side of the first end 61a and a groove 69 extending toward the second end 61b.
- the cutting tool 31 may be an insert drill 71, as a non-limiting example shown in FIG.
- the insert drill 71 has a bar shape extending from a first end 73a to a second end 73b along the rotation axis O.
- the holder 73 has a pocket 75 located on the side of the first end 73a. It may have a groove 77 extending toward the two ends 73 b and a polygonal plate-shaped (square plate-shaped) cutting insert 79 located in the pocket 75 .
- the cutting insert 79 has a first surface 81 (upper surface), a second surface 83 (side surface) adjacent to the first surface 81, and a first surface 81 and a second surface 83 (side surface).
- a cutting edge 85 located on at least a part of the ridgeline of the two surfaces 83 and a through hole 87 may be provided.
- the cutting insert 79 may then have a coated tool 1 .
- the cutting tool 31 is not limited to the exemplified form.
- the cutting tool 31 may be, for example, in a form used for turning. Turning may include, for example, internal diameter machining, external diameter machining, grooving, and face machining.
- the non-limiting coated tool 1 and the cutting tool 31 of the present disclosure have been exemplified, but the present disclosure is not limited to the above-described embodiments, and can be arbitrary as long as they do not deviate from the gist of the present disclosure. Needless to say.
- the coated tool 1 is used as the cutting tool 31 has been described as an example, but the coated tool 1 can also be applied to other uses.
- Other applications may include, for example, wear-resistant parts such as sliding parts and molds, tools such as drilling tools and knives, and shock-resistant parts.
- Example No. 1-11 ⁇ Production of coated tool> First, a substrate was produced. Specifically, 7.0% by mass of metallic Co powder, 0.8% by mass of Cr 3 C 2 powder, and the balance of WC powder having an average particle size of 0.5 ⁇ m were added and mixed to obtain a cylindrical shape. Molded and fired. Then, an untreated substrate having an end mill shape (end mill diameter: 10 mm, blade length: 30 mm, 4 blades) was produced through centerless processing and blade sharpening steps.
- the surface of the untreated substrate was surface-treated. Specifically, the untreated substrate was etched by immersing it in an alkaline solution (Murakami reagent for 20 to 45 minutes) and an acid solution (nitric acid at 1 mol/L for 20 minutes) in that order. The specific immersion time in the alkaline solution is shown in the column of alkali treatment shown in Table 1.
- a treatment liquid containing diamond abrasive grains with an average particle size of 5 ⁇ m in an organic solvent is prepared, the untreated substrate is immersed, and ultrasonic waves are applied with an ultrasonic cleaning machine manufactured by Otari Co., Ltd. under the conditions of an output of 400 W and a time of 20 minutes. processed.
- the substrate subjected to the above treatment was set in the film forming apparatus shown in FIG. 2, and a diamond film was formed on the surface of the substrate by a hot filament CVD method.
- a tungsten filament (heater) with a thickness of 0.4 mm ⁇ was placed inside a reaction chamber with a diameter of 25 cm ⁇ and a height of 20 cm.
- a set of two filaments having different distances from the substrate was arranged, one set on the tip side, and two sets on the lateral side so as to sandwich the substrate, for a total of six filaments.
- the film formation temperature was adjusted to 900°C.
- the end mill-shaped substrate was set in an upright state with the tip facing upward.
- a reaction gas composition: methane gas (4% by volume)+hydrogen gas (remainder) was introduced into the reaction chamber through the gas supply port to form a diamond film.
- the obtained coated tool was subjected to a cutting test under the following conditions, and the cutting distance and the presence or absence of peeling of the cutting edge after the test were evaluated.
- the cutting test was conducted with a cutting distance of 50 m as the upper limit, with one pass of 5 m, until detachment of the diamond film was observed on the cutting edge.
- the number of blades where the coating was peeled off was evaluated for the samples in which peeling of the coating was observed. Table 1 shows the results.
- Tool shape Blade diameter: 10 mm 4-flute end mill Cutting method: Shouldering Work material: CFRP Number of revolutions: 8000/min Feed amount: 0.02mm/blade depth of cut: vertical depth of cut 5mm, horizontal depth of cut 5mm Cutting condition: dry
- the coated tool of the present disclosure in which the number of free WC particles present per 10 ⁇ m of interface length is 4 or less, has excellent machining performance.
- Sample No. which is the coated tool of the present disclosure.
- Substrates 1-3, 5-7, 9-10 contained less binder phase at the surface of the substrate than at the center of the substrate. This confirmation was performed with the WDS described above.
- Substrates 1 to 3, 5 to 6, and 9 to 10 are areas where the content of the binder phase on the surface of the substrate is 15% or less of the content of the binder phase in the central portion of the substrate. had The length of the region with a low binder phase content was 1.0 ⁇ m or more and 5.0 ⁇ m or less.
- the "number of free WC particles” shown in Table 1 was measured by cross-sectional observation using an SEM.
- the "interfacial region WC grain size ratio” shown in Table 1 is the ratio of the average grain size of WC grains in the interface region when the average grain size of WC grains in the interior of the substrate is set to 1.
- the average particle size of the WC particles contained in the substrate was measured by the image analysis described above.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
Description
以下、本開示の限定されない一面の被覆工具1について、図面を用いて詳細に説明する。但し、以下で参照する図では、説明の便宜上、実施形態を説明する上で必要な主要部材のみが簡略化して示される。したがって、被覆工具1は、参照する図に示されない任意の構成部材を備え得る。また、図中の部材の寸法は、実際の構成部材の寸法および各部材の寸法比率などを忠実に表したものではない。これらの点は、後述する切削工具においても同様である。
次に、本開示の限定されない一面の被覆工具の製造方法について説明する。
出力:80W以上、250W以下
時間:5分以上、30分以下
装置:超音波分散機
出力:600W以上
時間:10分以上、120分以下
負圧条件:0.1~0.9気圧
出力:250W以上、500W以下
時間:5分以上、30分以下
次に、本開示の限定されない一面の切削工具31について、上記の被覆工具1を有する場合を例に挙げて、図3~図9を参照して詳細に説明する。
<被覆工具の作製>
まず、基体を作製した。具体的には、金属Co粉末を7.0質量%、Cr3C2粉末を0.8質量%、残部が平均粒径0.5μmのWC粉末の割合で添加して混合し、円柱形状に成形して焼成した。そして、センタレス加工および刃付け加工工程を経てエンドミル形状(エンドミル径10mm、刃長30mm、4枚刃)の未処理基体を作製した。
得られた被覆工具について、下記に示す条件で切削試験を行い、加工距離、試験後の刃先の剥離の有無について評価した。切削試験は加工距離50mを上限とし、1パス5mとし、刃先にダイヤモンド膜の剥離が観察されるまで行った。被膜の剥離が観察された試料について、被膜の剥離した刃の数を評価した。結果を表1に示す。
工具形状:刃径:10mm 4枚刃エンドミル
切削方法:肩加工
被削材:CFRP
回転数:8000/分
送り量:0.02mm/刃
切り込み:縦切り込み5mm、横切込み5mm
切削状態:乾式
3・・・基体
5・・・ダイヤモンド膜
7・・・WC基超硬合金
9・・・WC粒子
11・・・結合相
13・・・基体の表面
15・・・遊離WC粒子
31・・・切削工具
41・・・エンドミル
41a・・第1端
41b・・第2端
43・・・シャンク部
45・・・切削部
47・・・第1刃
49・・・第2刃
51・・・溝
53・・・ギャッシュ
61・・・ドリル
61a・・第1端
61b・・第2端
63・・・シャンク部
65・・・切削部
67・・・切刃
69・・・溝
71・・・インサートドリル
73・・・ホルダ
73a・・第1端
73b・・第2端
75・・・ポケット
77・・・溝
79・・・切削インサート
81・・・第1面
83・・・第2面
85・・・切刃
87・・・貫通孔
101・・・成膜装置
103・・・反応チャンバ
105・・・試料台
107・・・ヒータ
109・・・電源
111・・・支持体
113・・・ガス供給口
115・・・ガス排気口
S1・・・界面領域
S2・・・結合相の含有量が少ない領域
I・・・長さ
O・・・回転軸
Claims (4)
- WC粒子と、結合相とを有するWC基超硬合金からなる基体と、
該基体の上に位置するダイヤモンド膜とを有する被覆工具であって、
該被覆工具の表面に直交する断面において、
前記基体は、前記基体の中央部よりも前記基体の表面において、前記結合相の含有量が少なく、
前記基体と前記ダイヤモンド膜との界面領域において、
前記基体から離れて位置するWC粒子を遊離WC粒子とした場合、
界面長10μmあたりに存在する前記遊離WC粒子の数が4個以下である、被覆工具。 - 前記遊離WC粒子の数が0以上、2個以下であり、
前記基体は、前記基体の表面において、前記結合相の含有量が前記基体の中央部の前記結合相の含有量の15%以下となる前記結合相の含有量が少ない領域を有し、
前記結合相の含有量が少ない領域の長さが1.0μm以上、5.0μm以下である、請求項1に記載の被覆工具。 - 前記界面領域におけるWC粒子の平均粒径は、前記界面領域よりも前記基体の内部におけるWC粒子の平均粒径を1とした場合、0.7よりも小さい、請求項1または2に記載の被覆工具。
- 請求項1~3のいずれかに記載の被覆工具を有する、切削工具。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18/558,366 US20240217000A1 (en) | 2021-06-11 | 2022-02-15 | Coated tool and cutting tool |
JP2023527491A JPWO2022259623A1 (ja) | 2021-06-11 | 2022-02-15 | |
CN202280032498.2A CN117241903A (zh) | 2021-06-11 | 2022-02-15 | 涂层刀具及切削刀具 |
DE112022003011.9T DE112022003011T5 (de) | 2021-06-11 | 2022-02-15 | Beschichtetes werkzeug und schneidwerkzeug |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021-098119 | 2021-06-11 | ||
JP2021098119 | 2021-06-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022259623A1 true WO2022259623A1 (ja) | 2022-12-15 |
Family
ID=84425076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2022/005848 WO2022259623A1 (ja) | 2021-06-11 | 2022-02-15 | 被覆工具および切削工具 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240217000A1 (ja) |
JP (1) | JPWO2022259623A1 (ja) |
CN (1) | CN117241903A (ja) |
DE (1) | DE112022003011T5 (ja) |
WO (1) | WO2022259623A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001293603A (ja) * | 2001-02-28 | 2001-10-23 | Mitsubishi Materials Corp | 気相合成ダイヤモンド被覆切削工具 |
JP2008272863A (ja) * | 2007-04-27 | 2008-11-13 | Allied Material Corp | 気相合成ダイヤモンドチップおよびダイヤモンド工具 |
JP2015164752A (ja) * | 2014-03-03 | 2015-09-17 | 三菱マテリアル株式会社 | ダイヤモンド被覆超硬合金製切削工具 |
WO2016175088A1 (ja) * | 2015-04-27 | 2016-11-03 | 京セラ株式会社 | 被覆部材 |
WO2017086485A1 (ja) * | 2015-11-19 | 2017-05-26 | 三菱マテリアル株式会社 | 界面接合強度に優れた多結晶ダイヤモンド焼結体工具及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3603857A4 (en) | 2017-03-22 | 2020-11-04 | Mitsubishi Materials Corporation | DIAMOND COATED CEMENTED CARBIDE CUTTING TOOL |
KR102652149B1 (ko) | 2018-07-02 | 2024-03-27 | 스미또모 덴꼬오 하드메탈 가부시끼가이샤 | 다이아몬드 피복 공구 |
JP2020049107A (ja) | 2018-09-28 | 2020-04-02 | 株式会社ユニバーサルエンターテインメント | 遊技機 |
-
2022
- 2022-02-15 CN CN202280032498.2A patent/CN117241903A/zh active Pending
- 2022-02-15 WO PCT/JP2022/005848 patent/WO2022259623A1/ja active Application Filing
- 2022-02-15 JP JP2023527491A patent/JPWO2022259623A1/ja active Pending
- 2022-02-15 DE DE112022003011.9T patent/DE112022003011T5/de active Pending
- 2022-02-15 US US18/558,366 patent/US20240217000A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001293603A (ja) * | 2001-02-28 | 2001-10-23 | Mitsubishi Materials Corp | 気相合成ダイヤモンド被覆切削工具 |
JP2008272863A (ja) * | 2007-04-27 | 2008-11-13 | Allied Material Corp | 気相合成ダイヤモンドチップおよびダイヤモンド工具 |
JP2015164752A (ja) * | 2014-03-03 | 2015-09-17 | 三菱マテリアル株式会社 | ダイヤモンド被覆超硬合金製切削工具 |
WO2016175088A1 (ja) * | 2015-04-27 | 2016-11-03 | 京セラ株式会社 | 被覆部材 |
WO2017086485A1 (ja) * | 2015-11-19 | 2017-05-26 | 三菱マテリアル株式会社 | 界面接合強度に優れた多結晶ダイヤモンド焼結体工具及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE112022003011T5 (de) | 2024-03-28 |
CN117241903A (zh) | 2023-12-15 |
JPWO2022259623A1 (ja) | 2022-12-15 |
US20240217000A1 (en) | 2024-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3637882B2 (ja) | 表面被覆窒化硼素焼結体工具 | |
CN107532296B (zh) | 被覆部件 | |
CN105555447B (zh) | 切削工具以及切削加工物的制造方法 | |
JP5124790B2 (ja) | ダイヤモンド被覆切削工具 | |
JP5111379B2 (ja) | 切削工具及びその製造方法並びに切削方法 | |
JPWO2018174139A1 (ja) | ダイヤモンド被覆超硬合金切削工具 | |
EP2342367A1 (en) | A coated tool and a method of making thereof | |
JP6071100B1 (ja) | 被覆切削工具 | |
WO2008031768A1 (en) | Coated cutting tool | |
JP2002144111A (ja) | 表面被覆窒化硼素焼結体工具 | |
CN106536100B (zh) | 表面被覆切削工具 | |
CN104053517A (zh) | 金刚石包覆工具 | |
CN109070246A (zh) | 切削工具 | |
CN106660136B (zh) | 表面被覆切削工具 | |
CN109641283B (zh) | 表面被覆切削工具及其制造方法 | |
JP2010228016A (ja) | 切削工具 | |
JP2001293601A (ja) | 切削工具とその製造方法および製造装置 | |
EP3785831A1 (en) | Diamond-coated tool | |
CN102554318A (zh) | 金刚石包覆切削工具 | |
WO2022259623A1 (ja) | 被覆工具および切削工具 | |
JP2008132570A (ja) | 切削工具 | |
CN106536101B (zh) | 表面被覆切削工具 | |
JP2001293602A (ja) | 切削工具とその製造方法および製造装置 | |
JP2008264988A (ja) | 切削工具の製造方法 | |
JP2008238392A (ja) | 切削工具 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 22819814 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 202280032498.2 Country of ref document: CN Ref document number: 18558366 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2023527491 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 112022003011 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 22819814 Country of ref document: EP Kind code of ref document: A1 |