WO2022252714A1 - 一种多电源供电的芯片电源切换电路 - Google Patents

一种多电源供电的芯片电源切换电路 Download PDF

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WO2022252714A1
WO2022252714A1 PCT/CN2022/077863 CN2022077863W WO2022252714A1 WO 2022252714 A1 WO2022252714 A1 WO 2022252714A1 CN 2022077863 W CN2022077863 W CN 2022077863W WO 2022252714 A1 WO2022252714 A1 WO 2022252714A1
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output
terminal
comparator
power supply
switch
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PCT/CN2022/077863
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English (en)
French (fr)
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江向阳
林玲
陈鹏鹏
王文泽
丁燕
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杭州万高科技股份有限公司
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Publication of WO2022252714A1 publication Critical patent/WO2022252714A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
    • H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
    • H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/30—Systems integrating technologies related to power network operation and communication or information technologies for improving the carbon footprint of the management of residential or tertiary loads, i.e. smart grids as climate change mitigation technology in the buildings sector, including also the last stages of power distribution and the control, monitoring or operating management systems at local level
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
    • Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
    • Y04S20/00—Management or operation of end-user stationary applications or the last stages of power distribution; Controlling, monitoring or operating thereof
    • Y04S20/20—End-user application control systems

Definitions

  • the invention relates to a power switching circuit, in particular to a chip power switching circuit powered by multiple power sources.
  • a common power switching scheme is shown in Figure 4.
  • the power switching is completed through the Diode outside the chip.
  • the VDC voltage is higher than VBAT, and the diode D1 is turned on.
  • D0 is turned on to realize the switching of the power supply, but the system cannot meet the 3.3V application of the internal IO device.
  • Another solution to this problem is to add a 5V to 3.3V LDO outside the chip, and then realize the direct switching between the 3.3V power supply and the VBAT power supply inside the chip, but it will increase the overall BOM cost.
  • the technical problem to be solved by the present invention is to provide a chip power switching circuit powered by multiple power sources for the deficiencies of the prior art.
  • the present invention discloses a chip power switching circuit powered by multiple power sources, including: a low dropout linear regulator LDO, a first comparator CMOP0, a second comparator CMOP1, an off-chip power supply selection circuit, or Gate OR1, inverter INV and power selection module;
  • one output terminal AVDD33 of the low dropout linear regulator LDO is connected to the input terminal of the power selection module, and the other output of the low dropout linear regulator LDO is connected to the positive input terminal of the first comparator CMOP0;
  • the negative input terminal of the first comparator CMOP0 and the input terminal of the low-dropout linear regulator LDO are connected to the reference level VREF, and the output terminal of the first comparator CMOP0 is connected to an input terminal of the OR gate OR1;
  • the output end of the OR gate OR1 is connected to the other input end of the power selection module
  • the two input terminals of the external power selection circuit are respectively connected to the external DC power supply VDC and the battery power supply VBAT, and the output terminal of the external power selection circuit is connected to the positive input terminal of the second comparator CMOP1;
  • the battery power supply VBAT is also connected to the reverse input terminal of the second comparator CMOP1 and the input terminal of the power supply selection module;
  • the output terminal of the second comparator CMOP1 is connected to the input terminal of the inverter INV and the input terminal of the power selection module;
  • the output terminal of the inverter INV is connected to the other input terminal of the OR gate OR1;
  • the output end of the power selection module is connected to the internal load area of the chip.
  • the LDO of the present invention includes an operational amplifier OPAMP, a first resistor R0, a second resistor R1, a third resistor R2 and a power tube M0;
  • the positive input terminal of the operational amplifier OPAMP is connected to the reference voltage VREF, the negative terminal is connected to the common terminal of the third resistor R2 and the second resistor R1, and the output terminal of the operational amplifier OPAMP is connected to the gate terminal of the power transistor M0;
  • the source terminal of the power transistor M0 is connected to the output terminal AVDD5 of the off-chip power supply selection circuit, and the drain terminal of the power transistor M0 is connected to the positive input terminal of the third resistor R2;
  • the negative end of the third resistor R2 is connected to the positive end of the second resistor R1;
  • the negative terminal of the second resistor R1 is connected to the positive input terminal of the first comparator CMOP0 and the positive input terminal of the first resistor R0;
  • the negative end of the first resistor R0 is grounded.
  • the off-chip power supply selection circuit of the present invention includes a first diode D0 and a second diode D1;
  • the positive input terminal of the first diode D0 is connected to the external DC power supply VDC;
  • the positive input terminal of the second diode D1 is connected to the battery power supply VBAT;
  • the negative terminals of the first diode D0 and the second diode D1 are connected to form an output terminal AVDD5 of the off-chip selection circuit.
  • the input protection circuit of the present invention includes a second comparator CMOP1, a fourth resistor R3 and a fifth resistor R4;
  • the input end of the second comparator CMOP1 is sequentially connected to the fourth resistor R3 and the fifth resistor R4.
  • the power selection module of the present invention includes a first switch SW0 and a second switch SW1;
  • the source terminal of the first switch SW0 is connected to an output terminal AVDD33 of the low-dropout linear regulator LDO
  • the gate terminal of the first switch SW0 is connected to the output terminal of the OR gate OR1
  • the substrate and the drain terminal of the first switch SW0 are connected to the first the drain end of the second switch SW1;
  • the gate terminal of the second switch SW1 is connected to the output terminal of the second comparator COMP1, and the source terminal of the second switch SW1 is connected to the battery power supply VBAT.
  • the first switch SW0 of the present invention is a PMOS switch.
  • the second switch SW1 of the present invention is a PMOS switch.
  • the voltage at the positive terminal of the comparator COMP1 is 5V, and is set to 4.7V through a diode voltage drop, and the voltage at the negative terminal of the comparator COMP1 connected to the battery power supply VBAT does not exceed 3.6V.
  • Comparator COMP1 outputs PG_SEL at high level, and outputs PG_SELN at low level after passing through inverter INV, so that PMOS switch SW1 is closed; due to the normal output of an output terminal AVDD33 of low dropout linear regulator LDO, comparator COMP0 outputs AVDD_OK as Low level, the first comparator COMP0 outputs AVDD33_OK and the inverter INV output PG_SELN is low level at the same time, so that the output MAIN_SEL of the OR gate OR1 is low level, the first switch SW0 is turned on, and the low dropout linear regulator An output terminal AVDD33 of the LDO generates AVDDIO through the output of the first switch SW0 to supply power to subsequent circuits.
  • the battery power supply VBAT is sent to the output terminal AVDD5 of the off-chip power supply selection circuit.
  • the output PG_SEL of the comparator COMP1 is low level
  • the second switch SW1 is turned on
  • the output PG_SELN of the output PG_SEL of the comparator COMP1 after passing through an inverter is high level, so that the output MAIN_SEL of the OR gate OR1 is High level, the first switch SW0 is turned off; the battery power VBAT is output through the second switch SW1 to generate AVDDIO to supply power to the subsequent system.
  • the low dropout linear regulator LDO When the low dropout linear regulator LDO is powered on, the low dropout linear regulator LDO One output terminal AVDD33 output is stable, comparator COMP0 outputs low level and outputs PG_SEL low level or the output MAIN_SEL generated is low level, the first switch SW0 is opened, and one output terminal of low dropout linear regulator LDO is given by AVDD33 Subsequent circuits are powered.
  • the chip has a built-in 5V to 3.3V LDO circuit, and supports bypass, which can reduce power consumption and reduce BOM cost;
  • the present invention utilizes R0 of LDO, R1, R2 and comparator COMP0 and OR gate to form an overvoltage protection circuit
  • the present invention multiplexes the resistance of the LDO to the AVDD33 monitoring circuit.
  • a separate resistor string or other methods can be used to monitor the power supply voltage, so as to realize overvoltage monitoring and prevent damage to internal devices;
  • the resistance of the multiplexed LDO in the present invention effectively reduces the power consumption and area of the system.
  • Fig. 1 is a schematic diagram of the circuit structure of the present invention.
  • Fig. 2 is a schematic diagram of a specific circuit of the present invention.
  • FIG. 3 is a schematic diagram of an existing on-chip power switching circuit.
  • FIG. 4 is a schematic diagram of an existing off-chip power switching circuit.
  • a chip power switching circuit powered by multiple power supplies is composed of the following parts: low dropout linear regulator LDO, first comparator CMOP0, second comparator CMOP1, off-chip power supply selection circuit, or gate Composed of OR1, inverter INV and power selection module;
  • the output of the LDO is connected to the input of the power selection circuit, the output of one end of the LDO is connected to the positive input of the first comparator, and the negative input of the first comparator is connected to the input of the LDO to the reference voltage.
  • Level VREF the output of the first comparator is connected to the input terminal of the OR gate OR1; the output of the OR gate is connected to the input terminal of the power supply selection; the input of the external power supply selection circuit is connected to the external DC power supply VDC and the battery VBAT, and the output is sent to the second comparator
  • the positive input terminal of the external battery is connected to the negative input terminal of the second comparator and the input terminal of the power selection circuit at the same time, and the output of the second comparator is connected to the input terminal of the inverter INV and the power supply selection circuit;
  • the output terminal is connected to the input terminal of the OR gate OR1, and the output of the power selection module is connected to the internal load of the chip as a whole output.
  • the low-dropout linear regulator LDO is composed of an operational amplifier OPAMP, a first resistor R0, a second resistor R1, a third resistor R2, and a power tube M0; the positive input terminal of the operational amplifier is connected to the reference voltage VREF, and the negative terminal is connected to R2 and the common terminal of R1, the output terminal of the operational amplifier is connected to the gate terminal of the power tube, the source terminal of the power tube is connected to the output AVDD5 of the off-chip power supply selection circuit, and the drain terminal of the power tube is connected to the positive input terminal of the third resistor; the third resistor The negative terminal of R2 is connected to the positive terminal of the second resistor R1, and the negative terminal of the second resistor is connected to the positive input terminal of the first comparator and the positive input terminal of the first resistor. The negative end of the first resistor is grounded.
  • the off-chip power supply selection circuit is composed of the first diode D0 and the second diode D1.
  • the forward input terminal of the first diode is connected to VDC, and the forward input terminal of the second diode is connected to VBAT.
  • the negative terminals of the diodes are connected together to form the output terminal AVDD5 of the off-chip selection circuit.
  • the input terminal of the second comparator is connected to the fourth resistor R3 and the fifth resistor R4 to form an input protection circuit.
  • the linear regulator (Low Dropout Regulator-LDO) composed of the operational amplifier (Operational Amplifier-OPAMP) power tube M0 and resistors R0 ⁇ R2 provides power for the subsequent circuit.
  • the power supply voltage is: the resistance of R0+R1+R2
  • the value determines the static power consumption of the LDO. For low-power applications, the power consumption is generally required to be less than 1uA.
  • the positive terminal voltage of the comparator COMP1 is 5V after a diode voltage drop, generally set at 4.7V, the negative terminal of the comparator COMP1 is connected to the VBAT voltage, generally not exceeding 3.6V, then the output PG_SEL of the comparator COMP1 is High level, PG_SELN is low level, so that the PMOS switch SW1 is closed; due to the normal output of AVDD33, COMP0 outputs AVDD_OK is low, AVDD33_OK and PG_SELN are low level at the same time, so that the output MAIN_SEL output of OR gate OR1 is low level, PMOS Switch SW0 is turned on, and AVDD33 generates AVDDIO through switch SW0 to supply power to subsequent circuits; when VDC is powered off, VBAT power is sent to AVDD5, and the positive terminal voltage of comparator COMP1 is VBAT after a diode voltage drop, the voltage is generally VBAT-0.3V, The negative terminal of comparator COMP1 is connected
  • AVDD33 When VDC calls, due to LDObypass, AVDD33 will be overcharged. When the overcharge is greater than 3.6V, comparator COMP0 outputs high level, and SW0 automatically turns off. At the same time, comparator COMP1 outputs high level, and SW1 turns off.
  • the present invention provides an idea and method of a chip power switching circuit powered by multiple power sources. There are many methods and approaches for realizing the technical solution. The above descriptions are only preferred implementation modes of the present invention. Those of ordinary skill may make some improvements and modifications without departing from the principle of the present invention, and these improvements and modifications shall also be regarded as the protection scope of the present invention. All components that are not specified in this embodiment can be realized by existing technologies.

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  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Stand-By Power Supply Arrangements (AREA)
  • Electronic Switches (AREA)
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Abstract

本发明提出一种多电源供电的芯片电源切换电路，包括：低压差线性稳压器、第一比较器、第二比较器、片外电源选择电路、或门、反相器和电源选择模块；其中，低压差线性稳压器的一个输出连接电源选择模块的输入，另一个输出连接第一比较器的正向输入；第一比较器的负向输入和低压差线性稳压器的输入连接参考电平，输出连接或门的一个输入；或门的输出连接电源选择模块的另一个输入；外部电源选择电路的两个输入分别连接外部直流电源和电池电源，输出连接第二比较器的正向输入；电池电源连接第二比较器的反向输入和电源选择模块的输入；第二比较器的输出连接反相器的输入和电源选择模块的输入；反相器的输出连接或门的另一个输入。

Description

一种多电源供电的芯片电源切换电路 技术领域
本发明涉及一种电源切换电路，特别是一种多电源供电的芯片电源切换电路。
背景技术
主控系统供电正常有两路，来自电网的VDC和来自电池的VBAT，正常要求电网掉电以后切换成电池供电。如图3所示，在深亚微米等工艺节点，好多器件都是工作在3.3V，所以需要对来自电网的5V在芯片内部转换成3.3V，一般情况下要求这个LDO在电池供电时候旁路(bypass)。这样会导致当电网突然来电，LDO启动需要一点时间，这时芯片内部接3.3V电源的器件就会直接接5V电源，可能导致内部器件的损伤。
对于IO电压支持5V的系统，其电源切换常见一种方案如图4所示，通过芯片外的Diode完成电源的切换，电网有电时，VDC电压高于VBAT，二极管D1导通，当电网掉电时，D0导通，实现对电源的切换，但是该系统不能满足内部IO device时3.3V的应用。
其对电网突然来电，LDO5VT33输出因为来不及相应，跟随输入，AVDD33输出电压可能超过器件耐压没有做相应的防护。
另外解决该方案是通过片外增加一个5V转3.3V LDO,然后芯片内部实现3.3V电源和VBAT电源直接的切换，但是会增加整体BOM成本。
发明内容
发明目的：本发明所要解决的技术问题是针对现有技术的不足，提供一种多电源供电的芯片电源切换电路。
为了解决上述技术问题，本发明公开了一种多电源供电的芯片电源切换电路，包括：低压差线性稳压器LDO、第一比较器CMOP0、第二比较器CMOP1、片外电源选择电路、或门OR1、反相器INV和电源选择模块；
其中，低压差线性稳压器LDO的一个输出端AVDD33连接电源选择模块的输入端，低压差线性稳压器LDO的另一个输出连接第一比较器CMOP0的正向输入端；
第一比较器CMOP0的负向输入端和低压差线性稳压器LDO的输入端连接参考电平VREF，第一比较器CMOP0的输出端连接或门OR1的一个输入端；
或门OR1的输出端连接电源选择模块的另一个输入端；
外部电源选择电路的两个输入端分别连接外部直流电源VDC和电池电源VBAT，外部电源选择电路的输出端连接第二比较器CMOP1的正向输入端；
电池电源VBAT还连接第二比较器CMOP1的反向输入端和电源选择模块的输入端；
第二比较器CMOP1的输出端连接反相器INV的输入端和电源选择模块的输入端；
反相器INV的输出端连接或门OR1的另一个输入端；
电源选择模块的输出端连接芯片内部负载区域。
本发明所述低压差线性稳压器LDO内部包括运算放大器OPAMP、第一电阻R0、第二电阻R1、第三电阻R2和功率管M0；
其中，运算放大器OPAMP的正向输入端连接参考电压VREF，负端连接第三电阻R2和第二电阻R1的公共端，运算放大器OPAMP的输出端连接功率管M0的栅端；
功率管M0的源端连接片外电源选择电路的输出端AVDD5，功率管M0的漏端连接第三电阻R2的正向输入端；
第三电阻R2的负向端连接第二电阻R1的正向端；
第二电阻R1的负向端连接第一比较器CMOP0的正向输入端和第一电阻R0的正向输入端；
第一电阻R0的负向端接地。
本发明所述片外电源选择电路包括第一二极管D0和第二二极管D1；
其中，第一二极管D0正向输入端连接外部直流电源VDC；
第二二极管D1正向输入端连接电池电源VBAT；
第一二极管D0和第二二极管D1的负向端连接，组成片外选择电路的输出端AVDD5。
本发明所述输入保护电路包括第二比较器CMOP1、第四电阻R3和第五电阻R4；
其中，第二比较器CMOP1的输入端依次连接第四电阻R3和第五电阻R4。
本发明所述电源选择模块包括第一开关SW0和第二开关SW1；
其中，第一开关SW0的源端连接低压差线性稳压器LDO的一个输出端AVDD33，第一开关SW0的栅端连接或门OR1的输出端，第一开关SW0的衬底和漏端连接第二开关SW1的漏端；
第二开关SW1的栅端连接第二比较器COMP1的输出端，第二开关SW1的源端接电池电源VBAT。
本发明所述第一开关SW0为PMOS开关。
本发明所述第二开关SW1为PMOS开关。
本发明中，当直流电源VDC正常供电5V时，比较器COMP1正端电压5V，经过一个二极管diode压降，设置为4.7V，比较器COMP1的负端接电池电源VBAT电压不超过3.6V，比较器COMP1输出PG_SEL为高电平，经过反相器INV后输出PG_SELN为低电平，使得PMOS开关SW1关闭；由于低压差线性稳压器LDO的一个输出端AVDD33正常输出，比较器COMP0输出AVDD_OK为低电平，第一比较器COMP0输出AVDD33_OK和反相器INV输出PG_SELN同时为低电平，使得或门OR1的输出MAIN_SEL输出为低电平，第一开关SW0导通，低压差线性稳压器LDO的一个输出端AVDD33通过第一开关SW0输出产生AVDDIO给后续电路供电。
本发明中，当直流电源VDC掉电时，电池电源VBAT送给片外电源选择电路的输出端AVDD5，比较器COMP1正端电压是电池电源VBAT经过一个二极管diode压降，比较器COMP1的负端接电池电源VBAT电压，比较器COMP1输出PG_SEL为低电平，第二开关SW1导通，比较器COMP1输出PG_SEL经过一个反相器后的输出PG_SELN为高电平，使得或门OR1的输出MAIN_SEL为高电平，第一开关SW0关闭；电池电源VBAT通过第二开关SW1输出产生AVDDIO给后续系统供电。
本发明中，当直流电源VDC来电时，由于低压差线性稳压器LDO旁路(bypass)，低压差线性稳压器LDO的一个输出端AVDD33过充，当过充大于3.6V时，比较器COMP0输出高电平，第一开关SW0关闭，同时比较器COMP1输出也为高电平，第二开关SW1关闭，当低压差线性稳压器LDO完成上电后，低压差线性稳压器LDO的一个输出端AVDD33输出稳定，比较器COMP0输出低电平和输出PG_SEL的低电平或产生的输出MAIN_SEL为低电平，第一开关SW0打开，低压差线性稳压器LDO的一个输出端由AVDD33给后续电路供电。
有益效果：
1.本发明中芯片内置5V转3.3V LDO电路，且支持bypass，降低功耗同时，可以降低BOM成本；
2.本发明利用LDO的R0，R1，R2还有比较器COMP0以及或门组成过压保护电路；
3.本发明对AVDD33监测电路复用LDO的电阻，实际实现时可以有一个单独的电阻串或者其他方法来时间电源电压监测，以实现过压监测，防止损伤内部器件；
4，本发明复用LDO的电阻有效降低了系统的功耗和面积。
附图说明
下面结合附图和具体实施方式对本发明做更进一步的具体说明，本发明的上述和/或其他方面的优点将会变得更加清楚。
图1为本发明电路结构示意图。
图2为本发明具体电路示意图。
图3为现有片内电源切换电路示意图。
图4为现有片外电源切换电路示意图。
具体实施方式
如图1所示，一种多电源供电的芯片电源切换电路，由如下部分组成：低压差线性稳压器LDO、第一比较器CMOP0、第二比较器CMOP1、片外电源选择电路、或门OR1、反相器INV和电源选择模块组成；
低压差线性稳压源LDO的输出连接电源选择电路的输入，LDO的一端输出连接第一比较器的正向输入端，第一比较器的负向输入端和LDO的输入端连接一起接参考电平VREF，第一比较器的输出接或门OR1的输入端；或门的输出连接电源选择的输入端；外部电源选择电路的输入接外部直流电源VDC和电池VBAT，输出送给第二比较器的正向输入端，同时外部电池连接第二比较器的反向输入端和电源选择电路的输入端，第二比较器的输出接反相器INV和电源选择电路的输入端；反相器的输出端接或门OR1的输入端，电源选择模块输出作为整体输出接芯片内部负载。
其中低压差线性稳压器LDO内部包括运算放大器OPAMP、第一电阻R0、第二电阻R1、第三电阻R2、功率管M0组成；运算放大器的正向输入端接参考电压VREF，负端接R2和R1的公共端，运算放大器的输出端接功率管的栅端，功率管的源端接片外电源选择电路的输出AVDD5，功率管漏端接第三电阻的正向输入端；第三电阻R2的负向端接第二电阻R1的正向端，第二电阻的负向端接第一比较器的正向输入端和第 一电阻的正向输入端。第一电阻的负向端接地。
片外电源选择电路由第一二极管D0和第二二极管D1组成，第一二极管正向输入端接VDC，第二二极管正向输入端接VBAT，第一、第二二极管负向端接一起组成片外选择电路的输出端AVDD5。
第二比较器的输入端接入第四电阻R3和第五电阻R4组成输入保护电路。
使用PMOS开关SW0和SW1组成电源选择电路，其中第一开关SW0的源端接LDO的输出端AVDD33，第一开关的栅端接或门的输出端，第一开关的衬底和漏断接一起接第二开关SW1的漏端；第二开关的栅端接第二比较器COMP1的输出端，第二开关的源端接VBAT。
具体到如图2所示电路中，当采用电池供电时候，自动bypass5V转3.3V LDO，降低系统功耗，增加电池续航能力。
由运放放大器(Operational Amplifier-OPAMP)功率管M0以及电阻R0～R2组成的线性稳压源(Low Dropout Regulator-LDO)为后续电路提供电源，电源电压大小为：，R0+R1+R2的阻值决定了LDO的静态功耗，对于低功耗应用，一般要求该功耗小于1uA。假设功率管的静态电流为1uA，VEREF＝0.7V，AVDD33＝3.3V，则R0+R1+R2＝3.3M，R1+R0＝700k。取R0为670k，则R1＝30k。当AVDD33正常输出3.3V时，比较器CMOP0的正端输入电压为，负端输入电压为参考电平VREF＝700mV，比较器输出AVDD33_OK为低.当由于主电突然来电等原因导致LDO输出AVDD33突变到大于3.6V时候，AVDD_OK输出为高。D0和D1构成一个外部的电源电压自动选择电路，保证不管在何种供电情况下，AVDD5都有电压。
当VDC正常供电5V时候，比较器COMP1正端电压是5V经过一个diode压降，一般设置在4.7V，比较器COMP1的负端接VBAT电压，一般不超过3.6V，则比较器COMP1输出PG_SEL为高电平，PG_SELN为低电平，使得PMOS开关SW1关闭；由于AVDD33正常输出，COMP0输出AVDD_OK为低，AVDD33_OK和PG_SELN同时为低电平，使得或门OR1的输出MAIN_SEL输出为低电平，PMOS开关SW0导通，AVDD33通过开关SW0产生AVDDIO给后续电路供电；当VDC掉电时，VBAT电源送给AVDD5，比较器COMP1正端电压是VBAT经过一个diode压降，电压一般为VBAT-0.3V，比较器COMP1的负端接VBAT电压，COMP1输出PG_SEL为低电平， SW1导通，PG_SEL经过一个反相器后的PG_SELN为高电平，使得或门OR1的输出MAIN_SEL为高电平，SW0关闭；VBAT通过开关SW1产生AVDDIO给后续系统供电。此时为了降低功耗5V转3.3V LDO自动bypass，AVDD33出为VBAT经过一个diode压降。
当VDC来电时，由于LDObypass，AVDD33会由过充，当过充大于3.6V时候，比较器COMP0输出高电平，SW0自动关闭，同时比较器COMP1输出也为高电平，SW1关闭，当LDO完成上电，AVDD33输出稳定，比较器COMP0输出低电平和PG_SEL的低电平或产生的MAIN_SEL为低电平，开关SW0打开，由AVDD33给后续电路供电。
本发明提供了一种多电源供电的芯片电源切换电路的思路及方法，具体实现该技术方案的方法和途径很多，以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。本实施例中未明确的各组成部分均可用现有技术加以实现。

Claims (10)

  1. 一种多电源供电的芯片电源切换电路，其特征在于，包括：低压差线性稳压器LDO、第一比较器CMOP0、第二比较器CMOP1、片外电源选择电路、或门OR1、反相器INV和电源选择模块；
    其中，低压差线性稳压器LDO的一个输出端AVDD33连接电源选择模块的输入端，低压差线性稳压器LDO的另一个输出连接第一比较器CMOP0的正向输入端；
    第一比较器CMOP0的负向输入端和低压差线性稳压器LDO的输入端连接参考电平VREF，第一比较器CMOP0的输出端连接或门OR1的一个输入端；
    或门OR1的输出端连接电源选择模块的另一个输入端；
    外部电源选择电路的两个输入端分别连接外部直流电源VDC和电池电源VBAT，外部电源选择电路的输出端连接第二比较器CMOP1的正向输入端；
    电池电源VBAT还连接第二比较器CMOP1的反向输入端和电源选择模块的输入端；
    第二比较器CMOP1的输出端连接反相器INV的输入端和电源选择模块的输入端；
    反相器INV的输出端连接或门OR1的另一个输入端；
    电源选择模块的输出端连接芯片内部负载区域。
  2. 根据权利要求1所述的一种多电源供电的芯片电源切换电路，其特征在于，所述低压差线性稳压器LDO内部包括运算放大器OPAMP、第一电阻R0、第二电阻R1、第三电阻R2和功率管M0；
    其中，运算放大器OPAMP的正向输入端连接参考电压VREF，负端连接第三电阻R2和第二电阻R1的公共端，运算放大器OPAMP的输出端连接功率管M0的栅端；
    功率管M0的源端连接片外电源选择电路的输出端AVDD5，功率管M0的漏端连接第三电阻R2的正向输入端；
    第三电阻R2的负向端连接第二电阻R1的正向端；
    第二电阻R1的负向端连接第一比较器CMOP0的正向输入端和第一电阻R0的正向输入端；
    第一电阻R0的负向端接地。
  3. 根据权利要求2所述的一种多电源供电的芯片电源切换电路，其特征在于，所述片外电源选择电路包括第一二极管D0和第二二极管D1；
    其中，第一二极管D0正向输入端连接外部直流电源VDC；
    第二二极管D1正向输入端连接电池电源VBAT；
    第一二极管D0和第二二极管D1的负向端连接，组成片外选择电路的输出端AVDD5。
  4. 根据权利要求3所述的一种多电源供电的芯片电源切换电路，其特征在于，所述输入保护电路包括第二比较器CMOP1、第四电阻R3和第五电阻R4；
    其中，第二比较器CMOP1的输入端依次连接第四电阻R3和第五电阻R4。
  5. 根据权利要求4所述的一种多电源供电的芯片电源切换电路，其特征在于，所述电源选择模块包括第一开关SW0和第二开关SW1；
    其中，第一开关SW0的源端连接低压差线性稳压器LDO的一个输出端AVDD33，第一开关SW0的栅端连接或门OR1的输出端，第一开关SW0的衬底和漏端连接第二开关SW1的漏端；
    第二开关SW1的栅端连接第二比较器COMP1的输出端，第二开关SW1的源端接电池电源VBAT。
  6. 根据权利要求5所述的一种多电源供电的芯片电源切换电路，其特征在于，所述第一开关SW0为PMOS开关。
  7. 根据权利要求6所述的一种多电源供电的芯片电源切换电路，其特征在于，所述第二开关SW1为PMOS开关。
  8. 根据权利要求7所述的一种多电源供电的芯片电源切换电路，其特征在于，当直流电源VDC正常供电5V时，比较器COMP1正端电压5V，经过一个二极管diode压降，设置为4.7V，比较器COMP1的负端接电池电源VBAT电压不超过3.6V，比较器COMP1输出PG_SEL为高电平，经过反相器INV后输出PG_SELN为低电平，使得PMOS开关SW1关闭；由于低压差线性稳压器LDO的一个输出端AVDD33正常输出，比较器COMP0输出AVDD_OK为低电平，第一比较器COMP0输出AVDD33_OK和反相器INV输出PG_SELN同时为低电平，使得或门OR1的输出MAIN_SEL输出为低电平，第一开关SW0导通，低压差线性稳压器LDO的一个输出端AVDD33通过第一开关SW0输出产生AVDDIO给后续电路供电。
  9. 根据权利要求8所述的一种多电源供电的芯片电源切换电路，其特征在于，当直流电源VDC掉电时，电池电源VBAT送给片外电源选择电路的输出端AVDD5，比 较器COMP1正端电压是电池电源VBAT经过一个二极管diode压降，比较器COMP1的负端接电池电源VBAT电压，比较器COMP1输出PG_SEL为低电平，第二开关SW1导通，比较器COMP1输出PG_SEL经过一个反相器后的输出PG_SELN为高电平，使得或门OR1的输出MAIN_SEL为高电平，第一开关SW0关闭；电池电源VBAT通过第二开关SW1输出产生AVDDIO给后续系统供电。
  10. 根据权利要求9所述的一种多电源供电的芯片电源切换电路，其特征在于，当直流电源VDC来电时，由于低压差线性稳压器LDO旁路，低压差线性稳压器LDO的一个输出端AVDD33过充，当过充大于3.6V时，比较器COMP0输出高电平，第一开关SW0关闭，同时比较器COMP1输出也为高电平，第二开关SW1关闭，当低压差线性稳压器LDO完成上电后，低压差线性稳压器LDO的一个输出端AVDD33输出稳定，比较器COMP0输出低电平和输出PG_SEL的低电平或产生的输出MAIN_SEL为低电平，第一开关SW0打开，低压差线性稳压器LDO的一个输出端由AVDD33给后续电路供电。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109698909A (zh) * 2019-01-25 2019-04-30 无锡思泰迪半导体有限公司 一种用于模拟摄像头处理控制芯片

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7215103B1 (en) * 2004-12-22 2007-05-08 National Semiconductor Corporation Power conservation by reducing quiescent current in low power and standby modes
CN101277027A (zh) * 2008-02-22 2008-10-01 无锡紫芯集成电路系统有限公司 单片集成电源选择电路
CN103326458A (zh) * 2013-07-09 2013-09-25 深圳市汇顶科技股份有限公司 一种外部电源和电池供电的电源切换电路及切换方法
CN104777869A (zh) * 2015-03-27 2015-07-15 西安华芯半导体有限公司 一种动态调整参考电压的快速响应的低压差线性稳压器
CN105334900A (zh) * 2015-11-19 2016-02-17 成都华微电子科技有限公司 快速瞬态响应低压差线性稳压器
CN106385100A (zh) * 2016-09-18 2017-02-08 英特格灵芯片(天津)有限公司 Ldo电路

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7215103B1 (en) * 2004-12-22 2007-05-08 National Semiconductor Corporation Power conservation by reducing quiescent current in low power and standby modes
CN101277027A (zh) * 2008-02-22 2008-10-01 无锡紫芯集成电路系统有限公司 单片集成电源选择电路
CN103326458A (zh) * 2013-07-09 2013-09-25 深圳市汇顶科技股份有限公司 一种外部电源和电池供电的电源切换电路及切换方法
CN104777869A (zh) * 2015-03-27 2015-07-15 西安华芯半导体有限公司 一种动态调整参考电压的快速响应的低压差线性稳压器
CN105334900A (zh) * 2015-11-19 2016-02-17 成都华微电子科技有限公司 快速瞬态响应低压差线性稳压器
CN106385100A (zh) * 2016-09-18 2017-02-08 英特格灵芯片(天津)有限公司 Ldo电路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109698909A (zh) * 2019-01-25 2019-04-30 无锡思泰迪半导体有限公司 一种用于模拟摄像头处理控制芯片

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