WO2022248537A3 - Process for producing a vertical semiconductor component - Google Patents
Process for producing a vertical semiconductor component Download PDFInfo
- Publication number
- WO2022248537A3 WO2022248537A3 PCT/EP2022/064169 EP2022064169W WO2022248537A3 WO 2022248537 A3 WO2022248537 A3 WO 2022248537A3 EP 2022064169 W EP2022064169 W EP 2022064169W WO 2022248537 A3 WO2022248537 A3 WO 2022248537A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode structure
- atop
- substrate
- nitride layer
- gallium nitride
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910002601 GaN Inorganic materials 0.000 abstract 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 1
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Abstract
A process for producing a vertical semiconductor component (100) is provided, said process comprising: forming a gallium nitride layer system (15, 16, 17) on or atop a first side of the substrate (61, 61A); forming a frontside contact structure (23, 41) on or atop the gallium nitride layer system (15, 16, 17), wherein the frontside contact structure (23, 41) has at least a first electrode structure (41) and a second electrode structure (23) that are electrically insulated from one another; forming a backside contact structure (52) on or atop a second side of the substrate (61, 61A) which is opposite the first side, and/or on or atop the gallium nitride layer system (15, 16, 17) on the second side, wherein the backside contact structure (52) is electrically insulated from the first electrode structure (42) and the second electrode structure (23); applying a carrier (101) on or atop the frontside contact structure (23, 41) by means of a joining material (112), wherein the carrier (101) is set up such that the first electrode structure (41) is coupled to the second electrode structure (23); and processing, from the second side of the substrate (61, 61A), at least one of the gallium nitride layer system (15, 16, 17), the substrate (61, 61A) and the backside contact structure (52); and removing a portion of the carrier (101) in such a way that the first electrode structure (41) and the second electrode structure (23) are at least electrically insulated from one another after the removal.
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Application Number | Priority Date | Filing Date | Title |
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DE102021205375.0 | 2021-05-27 | ||
DE102021205375.0A DE102021205375A1 (en) | 2021-05-27 | 2021-05-27 | METHOD OF MAKING A VERTICAL SEMICONDUCTOR DEVICE |
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WO2022248537A3 true WO2022248537A3 (en) | 2023-01-19 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160013045A1 (en) * | 2012-08-10 | 2016-01-14 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
DE102015112649A1 (en) * | 2015-07-31 | 2017-02-02 | Infineon Technologies Ag | METHOD FOR FORMING SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR ELEMENT |
US20200013859A1 (en) * | 2018-07-03 | 2020-01-09 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
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DE102018132447B4 (en) | 2018-12-17 | 2022-10-13 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
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- 2021-05-27 DE DE102021205375.0A patent/DE102021205375A1/en active Pending
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- 2022-05-25 WO PCT/EP2022/064169 patent/WO2022248537A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160013045A1 (en) * | 2012-08-10 | 2016-01-14 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
DE102015112649A1 (en) * | 2015-07-31 | 2017-02-02 | Infineon Technologies Ag | METHOD FOR FORMING SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR ELEMENT |
US20200013859A1 (en) * | 2018-07-03 | 2020-01-09 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
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