WO2022241868A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2022241868A1
WO2022241868A1 PCT/CN2021/098645 CN2021098645W WO2022241868A1 WO 2022241868 A1 WO2022241868 A1 WO 2022241868A1 CN 2021098645 W CN2021098645 W CN 2021098645W WO 2022241868 A1 WO2022241868 A1 WO 2022241868A1
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Prior art keywords
layer
organic
substrate
undercut structure
source
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PCT/CN2021/098645
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English (en)
French (fr)
Inventor
方亮
Original Assignee
武汉华星光电半导体显示技术有限公司
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Priority to US17/433,968 priority Critical patent/US20240016027A1/en
Publication of WO2022241868A1 publication Critical patent/WO2022241868A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present application relates to the display field, in particular to a display panel and a display device.
  • OLED Organic Light-Emitting Diode
  • the mainstream technology is to arrange components with camera functions in the peripheral non-display area of the display device.
  • the biggest disadvantage is that the display device has a low degree of integration, and the effective display area is greatly reduced.
  • An existing method for increasing the effective display area of a display device is to arrange a camera component in the display area, and the display device adopts an open-hole design (O-Cut) corresponding to the area of the camera component.
  • the light-emitting functional layer contains a film layer with low light transmission effect.
  • the light-emitting functional layer in the camera module area needs to be removed by laser cutting. After laser cutting, the light-emitting functional layer The side is exposed to the external environment and is easily corroded by water and oxygen, which affects the stability of the display device.
  • Embodiments of the present application provide a display panel and a display device, which can reduce the risk of corrosion of the display panel by external water and oxygen, improve the stability of the display device, and improve product performance.
  • An embodiment of the present application provides a display panel, including a display area, an optical device area, and a transition area between the display area and the optical device area,
  • the display panel includes:
  • the thin film transistor layer disposed on one side of the substrate, the thin film transistor layer includes at least one undercut structure in the transition region, the undercut structure includes at least one inorganic layer and at least one organic layer, the The side of the organic layer away from the substrate is provided with at least one layer of the inorganic layer, and the orthographic projection of the organic layer on the substrate is located on the side adjacent to the organic layer and away from the substrate.
  • the inorganic layer is in orthographic projection on the substrate.
  • the undercut structure includes at least one sub-undercut structure, each of the sub-undercut structures includes one layer of the inorganic layer and at least one layer of the organic layer, In each of the sub-undercut structures, all the organic layers are arranged on top of each other and are arranged on a side of the inorganic layer close to the substrate;
  • the edge of the orthographic projection of the side of the organic layer away from the inorganic layer away from the display area on the substrate, and the edge of the side of the inorganic layer away from the display area is greater than the total thickness of all of the organic layers.
  • the display panel in the transition region, further includes a first array layer, and the first array layer is disposed between the substrate and the undercut structure Between, the first array layer includes at least one inorganic insulating layer;
  • the organic layer close to the substrate is in direct contact with the inorganic insulating layer in the first array layer.
  • the undercut structure includes one sub-undercut structure, and the sub-undercut structure includes one organic layer, two organic layers, or three layers. the organic layer.
  • the thin film transistor layer includes an organic interlayer insulating layer, a first source-drain layer, a first flat layer, a second source-drain layer, a second flat layer, and a second flat layer.
  • An electrode layer, the sub-undercut structure is any one of the following laminated layers:
  • a laminate composed of the first electrode layer, the organic interlayer insulating layer, the first planar layer, and the second planar layer.
  • the undercut structure includes one sub-undercut structure and a second inorganic layer, and the second inorganic layer is disposed on the sub-undercut structure close to the substrate.
  • the orthographic projections of all the organic layers in the sub-undercut structure on the substrate are located within the orthographic projections of the second inorganic layer on the substrate.
  • the thin film transistor layer includes an organic interlayer insulating layer, a first source-drain layer, a first flat layer, a second source-drain layer, a second flat layer, and a second flat layer.
  • An electrode layer, the undercut structure is any one of the following laminated layers:
  • a stack composed of the second source-drain layer, the second planar layer and the first electrode layer.
  • the undercut structure includes a first sub-undercut structure and a second sub-undercut structure arranged in layers, and the first sub-undercut structure is arranged on the second sub-undercut structure.
  • the sub-undercut structure is away from the side of the substrate.
  • the orthographic projection of all the organic layers in the first sub-undercut structure on the substrate is located in the inorganic layer in the second sub-undercut structure within an orthographic projection on the substrate.
  • the thin film transistor layer includes an organic interlayer insulating layer, a first source-drain layer, a first flat layer, a second source-drain layer, a second flat layer, and a second flat layer.
  • An electrode layer, the undercut structure is any one of the following laminated layers:
  • a stack composed of the organic interlayer insulating layer, the first source-drain layer, the first flat layer, and the second source-drain layer,
  • a laminate composed of the organic interlayer insulating layer, the first source-drain layer, the first planar layer, and the first electrode layer,
  • a laminate composed of the organic interlayer insulating layer, the first source-drain layer, the first planar layer, the second planar layer and the first electrode layer,
  • a laminate composed of the organic interlayer insulating layer, the first planar layer, the second source-drain layer, the second planar layer, and the first electrode layer,
  • a laminate composed of the first planar layer, the second source-drain layer, the second planar layer and the first electrode layer.
  • the first array layer extends to the display area, and in the display area, the display panel further includes a second array layer, and the second array layer
  • the undercut structure is arranged on the side of the first array layer away from the substrate, and the undercut structure is spaced apart from the second array layer.
  • the first array layer extends to the display area, and in the display area, the display panel further includes a second array layer, and the second array layer On the side of the first array layer away from the substrate, there is an undercut structure connected to the second array layer.
  • the display panel includes two or more undercut structures, and the two or more undercut structures are in the transition region along the The direction interval setting of the zone.
  • the second array layer includes an inorganic metal layer and an organic insulating layer, and the organic insulating layer is disposed on a side of the inorganic metal layer close to the substrate, so The organic layer is set on the same layer as the organic insulating layer, and the inorganic layer is set on the same layer as the inorganic metal layer.
  • the embodiments of the present application further provide a display device, including the display panel provided in any one of the embodiments of the present application.
  • Embodiments of the present application provide a display panel and a display device.
  • the display panel includes a display area, an optical device area, and a transition area between the display area and the optical device area.
  • the display panel includes: a substrate Bottom: a thin film transistor layer disposed on one side of the substrate, the thin film transistor layer includes at least one undercut structure in the transition region, and the undercut structure includes at least one inorganic layer and at least one organic layer , the organic layer is provided with at least one layer of the inorganic layer on the side away from the substrate, and the orthographic projection of the organic layer on the substrate is located on the side adjacent to the organic layer and away from the substrate.
  • the inorganic layer is in orthographic projection on the substrate.
  • an undercut structure formed by organic layers and inorganic layers is provided in the transition region of the display panel, so that in the subsequent manufacturing process of the display panel, the organic light-emitting layer is disconnected at the undercut structure, and the encapsulation layer encapsulates and Protecting the organic light-emitting layer at the break, blocking the path of external water and oxygen entering the display area through the side of the organic light-emitting layer, thereby reducing the risk of external water and oxygen corroding the display panel, improving the stability of the display device, and improving the product quality. performance.
  • FIG. 1 is a first structural schematic diagram of a display panel provided by an embodiment of the present application
  • FIG. 2 is a second structural schematic diagram of a display panel provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of a third structure of a display panel provided by an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a fourth structure of a display panel provided by an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a fifth structure of a display panel provided by an embodiment of the present application.
  • FIG. 6 is a schematic diagram of a sixth structure of a display panel provided by an embodiment of the present application.
  • FIG. 7 is a schematic diagram of a seventh structure of a display panel provided by an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a method for manufacturing a display panel provided by an embodiment of the present application.
  • Embodiments of the present application provide a display panel and a display device, so as to reduce the risk of corrosion of the display panel by external water and oxygen, improve the stability of the display device, and improve product performance.
  • a display panel and a display device so as to reduce the risk of corrosion of the display panel by external water and oxygen, improve the stability of the display device, and improve product performance.
  • FIG. 1 to FIG. 7 and FIG. 1 to FIG. 8 respectively show seven structural diagrams of the display panel provided by the embodiment of the present application.
  • the display panel provided by the embodiment of the present application includes a display area AA, an optical device area CA, and a transition area BA between the display area AA and the optical device area CA
  • the display panel includes a substrate 111 and a thin film transistor layer , the thin film transistor layer is arranged on one side of the substrate 111, the thin film transistor layer includes at least one undercut structure in the transition region FA, the undercut structure includes at least one inorganic layer and at least one organic layer, and the organic layer is far away from the substrate 111
  • At least one inorganic layer is provided on one side, and the orthographic projection of the organic layer on the substrate 111 is located within the orthographic projection of the inorganic layer on the substrate 111 that is adjacent to the organic layer and away from the substrate.
  • an undercut structure formed by organic layers and inorganic layers is provided in the transition region of the display panel, so that in the subsequent manufacturing process of the display panel, the organic light-emitting layer is disconnected at the undercut structure, and the encapsulation layer encapsulates and Protecting the organic light-emitting layer at the break, blocking the path of external water and oxygen entering the display area through the side of the organic light-emitting layer, thereby reducing the risk of external water and oxygen corroding the display panel, improving the stability of the display device, and improving the product quality. performance.
  • the display panel provided by the embodiment of the present application includes a substrate 111, a light-shielding layer 112, and a buffer layer sequentially arranged from bottom to top. 113, semiconductor active layer 121, first gate insulating layer 131, first gate layer 122, second gate insulating layer 132, second gate layer 123, first interlayer insulating layer 133, second interlayer The insulating layer 134 , the first source-drain layer 124 , the first planar layer 141 , the second source-drain layer 126 , the second planar layer 143 , the first electrode layer 151 and the pixel definition layer 160 .
  • the display panel provided by the embodiment of the present application includes a substrate 111, a light shielding layer 112, a buffer layer 113, a first gate insulating layer 131, a second gate insulating layer 132 and The first interlayer insulating layer 133 .
  • the display panel provided by the embodiment of the present application only includes the substrate 111 .
  • the substrate 111 can be a rigid substrate or a flexible substrate, the rigid substrate is generally a glass substrate, and the flexible substrate generally includes a first organic substrate, a second inorganic substrate, and a substrate located between the first substrate and the second substrate. Inorganic substrate between substrates.
  • the semiconductor active layer 121 is patterned to form the active region of the thin film transistor, and the active region includes a channel region and doped regions on both sides of the channel region.
  • the material of the semiconductor active layer 121 can be an oxide semiconductor material, or It may be polycrystalline silicon material or single crystal silicon material, etc., which is not limited here.
  • the first gate layer 122 is patterned to form the first gate of the thin film transistor and the first electrode plate of the capacitor
  • the second gate layer 123 is patterned to form the second gate of the thin film transistor and the second electrode plate of the capacitor.
  • the gate and the second gate simultaneously correspond to the channel region of the active layer 121 .
  • the first source-drain layer 124 is patterned to form the source and drain of the thin film transistor, and the source and drain pass through the first gate insulating layer 131, the second gate insulating layer 132, and the first interlayer insulating layer 133 respectively.
  • the via holes in the second interlayer insulating layer 134 are connected to the doped regions on both sides of the channel region.
  • the second source and drain layer 126 is patterned to form the transition source and transition drain of the thin film transistor.
  • the transition source passes through the first A via hole in the flat layer 141 is connected to the source, and the transition drain is connected to the drain through the via hole penetrating the first flat layer 141.
  • the material of the first source-drain layer 124 and the second source-drain layer 126 is inorganic metal Materials, including but not limited to metals molybdenum, aluminum, copper, titanium, chromium, silver or mixtures thereof. Components such as thin film transistors and capacitors, as well as signal lines together constitute the driving circuit of the display panel.
  • the first gate insulating layer 131 is disposed between the semiconductor active layer 121 and the first gate layer 122
  • the second gate insulating layer 132 is disposed between the first gate layer 122 and the second gate layer 123
  • the second gate insulating layer 132 is disposed between the first gate layer 122 and the second gate layer 123.
  • the interlayer insulating layer 133 and the second interlayer insulating layer 134 are arranged between the second gate layer 123 and the source-drain layer 124; wherein, the first interlayer insulating layer 133 is an inorganic interlayer insulating layer, and the second layer
  • the interlayer insulating layer 134 is an organic interlayer insulating layer.
  • the first gate insulating layer 131, the second gate insulating layer 132 and the first interlayer insulating layer 133 are respectively used to isolate the two adjacent conductive layers.
  • the insulating layer 134 is used to planarize the first interlayer insulating layer 133 and provide a flat base for the preparation of the first source-drain layer 124, including but not limited to acrylic, polyimide (PI) or benzocyclobutene ( BCB) and other organic materials.
  • the first planar layer 141 is located on the first source-drain layer 124, and the second planar layer 143 is located on the second source-drain layer 126.
  • the first planar layer 141 and the second planar layer 143 are used to planarize the underlying film layer, which is The preparation of the upper film layer provides a flat substrate.
  • the first flat layer 141 and the second flat layer 143 are generally organic layers, including but not limited to acrylic, polyimide (PI) or benzocyclobutene (BCB) etc. organic material.
  • the first electrode layer 151 is disposed on the second flat layer 143, and is patterned to form first electrodes that are spaced apart and independent from each other. The drain is connected to the driving circuit of the display panel.
  • the material of the first electrode layer 151 is an inorganic metal material, including but not limited to indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide , magnesium, silver, etc.
  • the pixel definition layer 160 is disposed on the first electrode layer 151 , and patterned to form pixel openings. The pixel openings correspond to the first electrodes one by one and expose the first electrodes.
  • the undercut structure includes a sub-undercut structure, the sub-undercut structure consists of an inorganic layer and an organic layer located under the inorganic layer and in contact with the inorganic layer. layer composition.
  • the organic layer can be a single-layer organic film layer, or a double-layer organic film layer, or a three-layer organic film layer.
  • FIG. 2 shows a second structural schematic diagram of a display panel provided by an embodiment of the present application, specifically showing an enlarged effect diagram of the dotted line area in FIG. 1 .
  • the display panel further includes a second interlayer insulating layer 135 and a first source-drain layer 125, and the first source-drain layer 125 is located on the second interlayer insulating layer 135 and is connected to the second interlayer insulating layer.
  • the second interlayer insulating layer 135 in the transition area BA and the second interlayer insulating layer 134 in the display area AA are prepared by the same process, and the first source-drain layer 125 in the transition area BA is the same as that in the display area AA.
  • the first source-drain layer 124 is prepared by the same process.
  • the orthographic projection of the second interlayer insulating layer 135 on the substrate 111 is located within the orthographic projection of the first source-drain layer 125 on the substrate 111, and the orthographic projection of the second interlayer insulating layer 135 on the substrate 111 is within The minimum distance L between the edge and the edge of the orthographic projection of the first source-drain layer 125 on the substrate 111 is greater than the thickness D of the second interlayer insulating layer 135 .
  • the display panel further includes an organic light emitting layer 170 and an encapsulation layer 180.
  • the organic light emitting layer 170 is formed on the pixel definition layer 160 and extends to the transition area BA. In the transition area BA, the organic light emitting layer 170 covers the first A source-drain layer 125 and a part of the first interlayer insulating layer 133 .
  • the encapsulation layer 180 is formed on the organic light emitting layer 170, covers the organic light emitting layer 170, and encapsulates and protects the display panel.
  • the encapsulation layer 180 may be a single-layer inorganic encapsulation layer, or a multilayer laminate encapsulation structure composed of inorganic layers and organic layers.
  • the multilayer lamination encapsulation structure generally includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a An organic encapsulation layer between an inorganic encapsulation layer and a second inorganic encapsulation layer, wherein the first inorganic encapsulation layer is in contact with the organic light-emitting layer 170 . Since the thickness of the organic light-emitting layer 170 is very small, the first source-drain layer 125 and the second interlayer insulating layer 135 form an undercut structure, so the organic light-emitting layer 170 is disconnected at the undercut structure, that is, it is located at the first source-drain layer.
  • the organic light emitting layer 170 on the electrode layer 125 is discontinuous with the organic light emitting layer 170 on the first interlayer insulating layer 133 . Further, since the minimum distance L between the edge of the orthographic projection of the second interlayer insulating layer 135 on the substrate 111 and the edge of the orthographic projection of the first source-drain layer 125 on the substrate 111 is larger than the second interlayer The thickness D of the insulating layer 135, that is, the shrinkage distance of the second interlayer insulating layer 135 relative to the first source-drain layer 125 is greater than the thickness D of the second interlayer insulating layer 135, which further ensures that the organic light-emitting layer 170 is in the drain region.
  • the fracture at the undercut structure formed by the electrode layer 125 and the second interlayer insulating layer 135 ensures that the organic light-emitting layer 170 on the first interlayer insulating layer 133 does not contact the second interlayer insulating layer 135, that is, it is located There is a gap between the organic light-emitting layer 170 on the first interlayer insulating layer 133 and the second interlayer insulating layer 135 and is disconnected from the organic light-emitting layer 170 on the first source-drain layer 125 .
  • the encapsulation layer 180 is formed on the organic light emitting layer 170, covers the organic light emitting layer 170 and fills the gap between the organic light emitting layer 170 and the second interlayer insulating layer 135 and the organic light emitting layer 170 on the first source and drain layer 125 and the first
  • the fracture between the organic light-emitting layer 170 on the interlayer insulating layer 133, the organic light-emitting layer 170 is completely covered by the first source-drain layer 125, the first interlayer insulating layer 133, and the single-layer inorganic encapsulation layer/first inorganic encapsulation layer Coating, the periphery of the organic light-emitting layer 170 no longer has the entrance of water and oxygen intrusion, thereby blocking the path of external water and oxygen entering the display area AA through the side of the organic light-emitting layer 170, thereby reducing the possibility of external water and oxygen eroding the display panel. risk, improve the stability of the display device, and improve product performance.
  • the undercut structure formed by the first source-drain layer 125 and the second interlayer insulating layer 135 is compatible with the source-drain layer 124 and/or the second layer in the display area AA.
  • the inter-insulating layers 134 are not in contact, and there may be one undercut structure or two or more undercut structures, and two or more undercut structures are arranged at intervals in the transition area BA along a direction away from the display area AA.
  • FIG. 3 FIG.
  • FIG. 3 shows a third structural schematic diagram of the display panel provided by the embodiment of the present application, the first source-drain layer 125 is connected to the source-drain layer 124, The second interlayer insulating layer 135 is connected to the second interlayer insulating layer 134, and the undercut structure formed by the first source-drain layer 125 and the second interlayer insulating layer 135 is located in the transition area BA and is connected to the display area AA.
  • the area BA is arranged at intervals along the direction away from the display area AA.
  • the display panel may include a stacked layer composed of the second source-drain layer and an organic interlayer insulating layer, or a stacked layer composed of the second source-drain layer and the first flat layer, or a stacked layer composed of the first flat layer.
  • the undercut structure has the same technical effect as the first embodiment.
  • FIG. 4 shows a schematic diagram of the fourth structure of the display panel provided by the embodiment of the present application.
  • the display panel also includes a second interlayer insulating layer 135.
  • the first flat layer 142 is located on the second interlayer insulating layer 135.
  • the orthographic projection of the first flat layer 142 on the substrate 111 is identical to the second interlayer insulating layer.
  • the orthographic projections of layer 135 on substrate 111 are coincident.
  • the second source-drain layer 127 is located on the first planar layer 142 and is in contact with the first planar layer 142 and completely covers the first planar layer 142 .
  • the second interlayer insulating layer 135 and the first planar layer 142 form an organic layer with a sub-undercut structure
  • the second interlayer insulating layer 135, the first planar layer 142 and the second source-drain layer 127 form a lower layer as a double-layer organic layer
  • the upper layer is an undercut structure of a metal-inorganic layer.
  • the second interlayer insulating layer 135 in the transition area BA and the second interlayer insulating layer 134 in the display area AA are prepared by the same process, and the first flat layer 142 in the transition area BA and the second interlayer insulating layer 142 in the display area AA A flat layer 141 is prepared by the same process, and the second source-drain layer 127 in the transition area BA and the second source-drain layer 126 in the display area AA are produced by the same process.
  • the orthographic projection of the first flat layer 142 on the substrate 111 is located within the orthographic projection of the second source-drain layer 126 on the substrate 111, and the edge of the orthographic projection of the first flat layer 142 on the substrate 111 is in the same direction as the second
  • the minimum distance between the edges of the orthographic projection of the source-drain layer 126 on the substrate 111 is greater than the sum of the thicknesses of the first flat layer 142 and the second interlayer insulating layer 135 .
  • the undercut structure formed by the second interlayer insulating layer 135, the first planar layer 142 and the second source-drain layer 127 is the same as that of the first source-drain layer 125 and the second interlayer insulating layer 135 in the embodiment shown in FIG.
  • the formed undercut structure is similar, and its specific implementation and working principle are also the same as the undercut structure formed by the first source-drain layer 125 and the second interlayer insulating layer 135 in the embodiment shown in FIG. 1 .
  • the foregoing embodiments will not be repeated here.
  • an undercut structure composed of the second interlayer insulating layer 135, the first planar layer 142, and the second source-drain layer 127 is provided in the transition region, so that in the subsequent manufacturing process of the display panel, the organic light-emitting layer
  • the undercut structure is disconnected, and the encapsulation layer encapsulates and protects the organic light-emitting layer at the break, blocking the path of external water and oxygen entering the display area through the side of the organic light-emitting layer, thereby reducing the risk of external water and oxygen corroding the display panel.
  • the stability of the display device is improved, and the product performance is improved.
  • the display panel may include a stack composed of the first electrode layer, an organic interlayer insulating layer, and a first planar layer, or a first electrode layer, an organic interlayer insulating layer, and a second planar layer.
  • FIG. 5 shows a fifth structural schematic diagram of the display panel provided by the embodiment of the present application.
  • the display panel also includes a second interlayer insulating layer 135.
  • the orthographic projections of the second planar layer 144 on the substrate 111 , the orthographic projections of the first planar layer 142 on the substrate 111 and the orthographic projections of the second interlayer insulating layer 135 on the substrate 111 coincide with each other.
  • the first electrode layer 152 is located on the second planar layer 144 , in contact with the second planar layer 144 and completely covers the second planar layer 144 .
  • the second interlayer insulating layer 135, the first planar layer 142 and the second planar layer 144 form an organic layer of a sub-undercut structure, and the second interlayer insulating layer 135, the first planar layer 142, the second planar layer 144 and the first
  • the electrode layer 152 constitutes an undercut structure in which the lower layer is a three-layer organic layer and the upper layer is a metal-inorganic layer.
  • the second interlayer insulating layer 135 in the transition area BA and the second interlayer insulating layer 134 in the display area AA are prepared by the same process, and the first flat layer 142 in the transition area BA and the second interlayer insulating layer 142 in the display area AA
  • a flat layer 141 is prepared by the same process
  • the second flat layer 144 in the transition area BA and the second flat layer 143 in the display area AA are prepared by the same process
  • the first electrode layer in the transition area BA 152 and the first electrode layer 151 in the display area AA are prepared by the same process.
  • the orthographic projection of the second flat layer 144 on the substrate 111 is located within the orthographic projection of the first electrode layer 151 on the substrate 111, and the edge of the orthographic projection of the second flat layer 144 on the substrate 111 is in the same direction as the first electrode layer.
  • the minimum distance between the edges of the orthographic projection of 151 on the substrate 111 is greater than the sum of the thicknesses of the second planar layer 144 , the first planar layer 142 and the second interlayer insulating layer 135 .
  • the undercut structure formed by the second interlayer insulating layer 135, the first planar layer 142, the first planar layer 144 and the second source-drain layer 127 is the same as that of the first source-drain layer 125 and the second source-drain layer 127 in the embodiment shown in FIG.
  • the undercut structure formed by the second interlayer insulating layer 135 is similar, and its specific implementation and working principle are also the same as those of the undercut formed by the first source-drain layer 125 and the second interlayer insulating layer 135 in the embodiment shown in FIG.
  • the structures are the same, for details, reference may be made to the foregoing embodiments, and details are not repeated here.
  • an undercut structure composed of the second interlayer insulating layer 135, the first planar layer 142, the first planar layer 144, and the second source-drain layer 127 is provided in the transition region, so that in the subsequent manufacturing process of the display panel , the organic light-emitting layer is disconnected at the undercut structure, and the encapsulation layer encapsulates and protects the organic light-emitting layer at the break, blocking the path of external water and oxygen entering the display area through the side of the organic light-emitting layer, thereby reducing the external water and oxygen
  • the risk of corroding the display panel improves the stability of the display device and improves product performance.
  • FIG. 6 shows a sixth structural schematic diagram of the display panel provided by the embodiment of the present application.
  • the display panel further includes a first source-drain layer 125, the first flat layer 142 and the second source-drain layer 127, the first flat layer 142 is located on the first source-drain layer 125, the second source-drain layer 127 is located on the first flat layer 142 and the first flat layer 142 contacts and completely covers the first flat layer 142, the first flat layer 142 and the second source-drain layer 127 form a sub-undercut structure in which the lower layer is an organic layer and the upper layer is a metal-inorganic layer.
  • the first source-drain layer 125, the first The flat layer 142 and the second source-drain layer 127 form an undercut structure.
  • the first source-drain layer 125 in the transition area BA and the first source-drain layer 124 in the display area AA are prepared by the same process, and the orthographic projection of the first flat layer 142 on the substrate 111 is located at the first source-drain layer 124.
  • the orthographic projection of the second source and drain layer 127 on the substrate 111 is located in the orthographic projection of the first source and drain layer 125 on the substrate 111 or is in line with the first The orthographic projections of the source-drain layer 125 on the substrate 111 coincide.
  • the sub-undercut structure formed by the first flat layer 142 and the second source-drain layer 127 is similar to the sub-undercut structure in the first embodiment, and its specific implementation and working principle are also the same as those in the first embodiment.
  • the structure of the sub-undercut is the same, for details, reference may be made to the above-mentioned embodiments, and details will not be repeated here.
  • the first source-drain layer 125 is disposed under the first planar layer 142, forming a step between the first interlayer insulating layer 133 and the first planar layer 142, extending the first interlayer insulating
  • the path between the layer 133 and the first flat layer 142 further ensures that the organic light-emitting layer is broken at the undercut structure formed by the first flat layer 142 and the second source-drain layer 127 in the subsequent manufacturing process, further ensuring The organic light emitting layer 170 on the first interlayer insulating layer 133 is not in contact with the first flat layer 142 .
  • an undercut structure composed of the first source-drain layer 125, the first planar layer 142, and the second source-drain layer 127 is provided in the transition region, and the first source-drain layer 125 serves as a step of the sub-undercut structure.
  • the encapsulation layer encapsulates and protects the organic light-emitting layer at the break, and blocks the external water and oxygen from passing through the side of the organic light-emitting layer The path entering the display area further reduces the risk of external water and oxygen corroding the display panel, improves the stability of the display device, and improves product performance.
  • the display panel may include a stack of the first source-drain layer, the first planar layer, and the first electrode layer, or the first source-drain layer, the first planar layer, and the second planar layer. layer and the first electrode layer, or the second source-drain layer, the second planar layer and the first electrode layer, to form an undercut structure similar to that shown in Figure 6, which serves as the second Embodiment same technical effect.
  • FIG. 7 shows a seventh structural diagram of the display panel provided by the embodiment of the present application.
  • the display panel also includes a second interlayer insulating layer 135, the first source-drain layer 125, the first planar layer 142 and the second source-drain layer 127, the second interlayer insulating layer 135 and the first source-drain layer 125 form a first sub-undercut structure, the first planar The layer 142 and the second source-drain layer 127 form a second sub-undercut structure, and the first sub-undercut structure and the second sub-undercut structure are stacked.
  • the first sub-undercut structure and the second sub-undercut structure are similar to the sub-undercut structure in the first embodiment, and their specific implementation and working principle are also the same as the sub-undercut structure in the first embodiment, For details, reference may be made to the foregoing embodiments, and details are not repeated here.
  • the orthographic projection of the first flat layer 142 on the substrate 111 is located within the orthographic projection of the first source-drain layer 125 on the substrate 111
  • the orthographic projection of the second source-drain layer 127 on the substrate 111 is located within the first source-drain layer 125.
  • the orthographic projection of the drain layer 125 on the substrate 111 is within or coincides with the orthographic projection of the first source-drain layer 125 on the substrate 111 .
  • the disconnection effect of the organic light-emitting layer at the undercut structure in the subsequent manufacturing process of the display panel is further improved. And protect the organic light-emitting layer at the fracture, blocking the path of external water and oxygen entering the display area through the side of the organic light-emitting layer, thereby reducing the risk of external water and oxygen corroding the display panel, improving the stability of the display device, and improving Product performance.
  • the display panel may include a stack composed of the second interlayer insulating layer, the first source-drain layer, the first flat layer and the first electrode layer, or the second interlayer insulating layer, the first A stack composed of a source-drain layer, a first planar layer, a second planar layer and a first electrode layer, or a second interlayer insulating layer, a second source-drain layer, a second planar layer and a first electrode layer , or a stack of the first planar layer, the second source-drain layer, the second planar layer and the first electrode layer to form a double sub-undercut structure similar to that shown in FIG.
  • the same technical effect of the above embodiments is not limited to form a double sub-undercut structure.
  • the embodiment of the present application also provides a display device, which includes any display panel provided in the embodiment of the present application, and has the technical features and technical effects of any display panel provided in the embodiment of the present application.
  • a display device which includes any display panel provided in the embodiment of the present application, and has the technical features and technical effects of any display panel provided in the embodiment of the present application.
  • the embodiment of the present application also provides a method for preparing a display panel, the method comprising:
  • Step S1 preparing a substrate, a light-shielding layer, a buffer layer, a semiconductor active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, and a first interlayer insulating layer and the second interlayer insulating layer, as shown in Figure 8(a).
  • Step S2 opening holes in the optical device area CA, removing other film structures in the optical device area CA, leaving only the substrate, removing the second interlayer insulating layer in the transition area BA, and preparing source and drain in the display area AA Pole vias, as shown in Figure 8(b).
  • Step S3 preparing and patterning the first source-drain layer on the second interlayer insulating layer, as shown in (c) of FIG. 8 .
  • Step S4 preparing a first flat layer on the first source and drain layer and performing patterning, as shown in (d) of FIG. 8 .
  • Step S5 preparing and patterning a second source and drain layer on the first planar layer, as shown in (e) of FIG. 8 .
  • Step S6 preparing a second flat layer on the second source-drain layer and patterning it to form the first electrode via hole in the display area AA, removing the second flat layer in the transition area BA and the optical device area CA, As shown in (f) in Figure 8.
  • Step S7 prepare the first electrode layer on the second planar layer, and pattern it to form the first electrode in the display area AA, and remove the first electrode layer in the transition area BA and the optical device area CA, as shown in Figure 8 (g) shown.
  • Step S8 preparing a pixel definition layer on the first electrode layer, and performing patterning to form a pixel opening in the display area AA, and removing the pixel definition layer in the transition area BA and the optical device area CA, as shown in Figure 8 (h) shown.
  • Step S9 performing dry etching on the transition region BA to form an undercut structure in which the lower layer is an organic layer and the upper layer is an inorganic layer, as shown in (i) of FIG. 8 .
  • the film layer structure in the display area AA is protected by photoresist, and the film layer in the transition area BA is dry-etched by an etching gas containing oxygen. Because oxygen has no etching effect on the inorganic layer substantially, but has a strong etching effect on the organic layer, therefore, in this step, oxygen will etch the side of the first flat layer, and the etching rate can be adjusted by Process parameters are adjusted, and the highest rate can reach 300nm/min.
  • the etching gas of the dry etching technology is simple, the etching rate adjustment space is large, and the etching selectivity ratio of the organic layer to the inorganic layer (the ratio of the etching rate of the organic layer to the inorganic layer) can be infinite, which is beneficial to Increase productivity and reduce costs.
  • the etching of the organic layer by oxygen is more uniform, which can ensure the precise line width and good shape of the undercut structure.
  • the projection of the first planar layer on the substrate is located within the projection of the second source and drain layer on the substrate, and the edge of the projection of the first planar layer on the substrate The distance from the edge of the projection of the second source-drain layer on the substrate is greater than the thickness of the first planar layer.
  • the undercut structure shown in (i) in Figure 8 makes the organic light-emitting layer disconnected at the undercut structure during the subsequent evaporation process, and the edge of the projection of the first flat layer on the substrate is connected to the second source and drain
  • the distance between the projected edges of the layers on the substrate is greater than the thickness of the first flat layer, so that the organic light-emitting layer has no contact with the first flat layer, so that when the subsequent packaging layer encapsulates the display panel, the inorganic packaging layer Encapsulation and protection of the organic light-emitting layer at the break prevents the path of external water and oxygen from entering the display area through the side of the organic light-emitting layer, thereby reducing the risk of external water and oxygen corroding the display panel, and improving the performance of the display device.
  • the stability improves the product performance.
  • the embodiments of the present application provide a display panel, a manufacturing method thereof, and a display device.
  • an undercut structure is provided in the transition region, so that in the subsequent manufacturing process of the display panel, the organic light-emitting layer The cut structure is disconnected, and the encapsulation layer encapsulates and protects the organic light-emitting layer at the break, blocking the path of external water and oxygen entering the display area through the side of the organic light-emitting layer, thereby reducing the risk of external water and oxygen corroding the display panel and improving the performance of the display panel.
  • the stability of the display device is improved, and the product performance is improved.

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Abstract

本申请公开了一种显示面板及显示装置，显示面板包括显示区、光学器件区和过渡区，并包括衬底；薄膜晶体管层，在衬底一侧，在过渡区内包括至少一底切结构，底切结构包括至少一层无机层和有机层，有机层远离衬底的一侧至少设置一层无机层，有机层在衬底上的正投影位于临近有机层且远离衬底一侧的无机层在衬底上的正投影内。

Description

显示面板及显示装置 技术领域
本申请涉及显示领域，具体涉及一种显示面板及显示装置。
 背景技术
有机电致发光显示装置（Organic Light-Emitting Diode，OLED）的一个重要使用性能是摄像功能，目前，主流技术是将具有摄像功能的组件设置在显示装置的外围非显示区，这种方式存在一大弊端就是显示装置集成度较低，有效显示面积大大降低。现有一种增加显示装置有效显示面积的方法是将摄像组件设置于显示区，显示装置对应于摄像组件区域采用开孔式设计（O-Cut）。
然而，在现有技术中，发光功能层中含有透光效果较低的膜层，为了提高摄像效果，摄像组件区域的发光功能层需要通过激光切割的方式进行去除，激光切割后发光功能层的侧边暴露在外环境中，容易受到水氧侵蚀，影响显示装置的稳定性。
 技术问题
本申请实施例提供一种显示面板及显示装置，可以减小外界水氧对显示面板的侵蚀风险，提高显示装置的稳定性，提升产品性能。
 技术解决方案
本申请实施例提供一种显示面板，包括显示区、光学器件区、以及位于所述显示区和所述光学器件区之间的过渡区，
所述显示面板包括：
衬底；
薄膜晶体管层，设置在所述衬底一侧，所述薄膜晶体管层在所述过渡区内包括至少一个底切结构，所述底切结构包括至少一层无机层和至少一层有机层，所述有机层远离所述衬底的一侧至少设置一层所述无机层，所述有机层在所述衬底上的正投影位于临近所述有机层且远离所述衬底一侧的所述无机层在所述衬底上的正投影内。
可选的，在本申请的一些实施例中，所述底切结构包括至少一个子底切结构，每个所述子底切结构包括一层所述无机层和至少一层所述有机层，在每个所述子底切结构中，所有的所述有机层相互层叠设置且均设置于所述无机层靠近所述衬底的一侧；
在所述子底切结构中，远离所述无机层的所述有机层远离所述显示区的一侧在所述衬底上的正投影的边缘，与所述无机层远离所述显示区的一侧在所述衬底上的正投影的边缘之间的最小距离，大于所有所述有机层的总厚度。
可选的，在本申请的一些实施例中，在所述过渡区内，所述显示面板还包括第一阵列层，所述第一阵列层设置于所述衬底和所述底切结构之间，所述第一阵列层包括至少一个无机绝缘层；
靠近所述第一阵列层的所述子底切结构中，靠近所述衬底的有机层与所述第一阵列层中的无机绝缘层直接接触。
可选的，在本申请的一些实施例中，所述底切结构包括一个所述子底切结构，所述子底切结构包括一层所述有机层、两层所述有机层或三层所述有机层。
可选的，在本申请的一些实施例中，所述薄膜晶体管层包括有机层间绝缘层、第一源漏极层、第一平坦层、第二源漏极层、第二平坦层和第一电极层，所述子底切结构为以下叠层中的任意一种：
所述第一源漏极层和所述有机层间绝缘层组成的叠层，
所述第二源漏极层和所述有机层间绝缘层组成的叠层，
所述第二源漏极层和所述第一平坦层组成的叠层，
所述第二源漏极层和所述第一平坦层、所述有机层间绝缘层组成的叠层，
所述第一电极层和所述有机层间绝缘层组成的叠层，
所述第一电极层和所述第一平坦层组成的叠层，
所述第一电极层和所述第二平坦层组成的叠层，
所述第一电极层和所述有机层间绝缘层、所述第一平坦层组成的叠层，
所述第一电极层和所述有机层间绝缘层、所述第二平坦层组成的叠层，
所述第一电极层和所述第一平坦层、所述第二平坦层组成的叠层，
所述第一电极层和所述有机层间绝缘层、所述第一平坦层、所述第二平坦层组成的叠层。
可选的，在本申请的一些实施例中，所述底切结构包括一个所述子底切结构和第二无机层，所述第二无机层设置于所述子底切结构靠近所述衬底的一侧，所述子底切结构内的所有所述有机层在所述衬底上的正投影均位于所述第二无机层在所述衬底上的正投影内。
可选的，在本申请的一些实施例中，所述薄膜晶体管层包括有机层间绝缘层、第一源漏极层、第一平坦层、第二源漏极层、第二平坦层和第一电极层，所述底切结构为以下叠层中的任意一种：
所述第一源漏极层、所述第一平坦层和所述第一电极层组成的叠层，
所述第一源漏极层、所述第一平坦层和所述第二源漏极层组成的叠层，
所述第一源漏极层、所述第一平坦层、所述第二平坦层和所述第一电极层组成的叠层，
所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层。
可选的，在本申请的一些实施例中，所述底切结构包括层叠设置的第一子底切结构和第二子底切结构，所述第一子底切结构设置于所述第二子底切结构远离所述衬底的一侧。
可选的，在本申请的一些实施例中，所述第一子底切结构内的所有所述有机层在所述衬底上的正投影位于所述第二子底切结构内的无机层在所述衬底上的正投影内。
可选的，在本申请的一些实施例中，所述薄膜晶体管层包括有机层间绝缘层、第一源漏极层、第一平坦层、第二源漏极层、第二平坦层和第一电极层，所述底切结构为以下叠层中的任意一种：
所述有机层间绝缘层、所述第一源漏极层、所述第一平坦层和所述第二源漏极层组成的叠层，
所述有机层间绝缘层、所述第一源漏极层、所述第一平坦层和所述第一电极层组成的叠层，
所述有机层间绝缘层、所述第一源漏极层、所述第一平坦层、所述第二平坦层和所述第一电极层组成的叠层，
所述有机层间绝缘层、所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层，
所述有机层间绝缘层、所述第一平坦层、所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层，
所述第一平坦层、所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层。
可选的，在本申请的一些实施例中，所述第一阵列层延伸至所述显示区，在所述显示区内，所述显示面板还包括第二阵列层，所述第二阵列层设置于所述第一阵列层远离所述衬底的一侧，所述底切结构与所述第二阵列层间隔设置。
可选的，在本申请的一些实施例中，所述第一阵列层延伸至所述显示区，在所述显示区内，所述显示面板还包括第二阵列层，所述第二阵列层设置于所述第一阵列层远离所述衬底的一侧，存在一个所述底切结构与所述第二阵列层连接设置。
可选的，在本申请的一些实施例中，所述显示面板包括两个或多个所述底切结构，两个或多个所述底切结构在所述过渡区内沿远离所述显示区的方向间隔设置。
可选的，在本申请的一些实施例中，所述第二阵列层包括无机金属层和有机绝缘层，所述有机绝缘层设置于所述无机金属层靠近所述衬底的一侧，所述有机层与所述有机绝缘层同层设置，所述无机层与所述无机金属层同层设置。
相应的，本申请实施例还提供一种显示装置，包括本申请任意一种实施例提供的显示面板。
 有益效果
本申请实施例提供一种显示面板及显示装置，所述显示面板包显示区、光学器件区、以及位于所述显示区和所述光学器件区之间的过渡区，所述显示面板包括：衬底；薄膜晶体管层，设置在所述衬底一侧，所述薄膜晶体管层在所述过渡区内包括至少一个底切结构，所述底切结构包括至少一层无机层和至少一层有机层，所述有机层远离所述衬底的一侧至少设置一层所述无机层，所述有机层在所述衬底上的正投影位于临近所述有机层且远离所述衬底一侧的所述无机层在所述衬底上的正投影内。本申请实施例通过在显示面板的过渡区内设置由有机层和无机层形成的底切结构，使得在显示面板的后续制程中，有机发光层在该底切结构处断开，封装层封装并保护断裂处的有机发光层，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的显示面板的第一种结构示意图；
图2是本申请实施例提供的显示面板的第二种结构示意图；
图3是本申请实施例提供的显示面板的第三种结构示意图；
图4是本申请实施例提供的显示面板的第四种结构示意图；
图5是本申请实施例提供的显示面板的第五种结构示意图；
图6是本申请实施例提供的显示面板的第六种结构示意图；
图7是本申请实施例提供的显示面板的第七种结构示意图；
图8是本申请实施例提供的显示面板的制备方法的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供一种显示面板及显示装置，以减小外界水氧对显示面板的侵蚀风险，提高显示装置的稳定性，提升产品性能。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。
在一种实施例中，请参照图1至图7所示，图1至图8分别示出了本申请实施例提供的显示面板的七种结构示意图。如图所示，本申请实施例提供的显示面板包括显示区AA、光学器件区CA、以及位于显示区AA和光学器件区CA之间的过渡区BA，显示面板包括衬底111和薄膜晶体管层，薄膜晶体管层设置在衬底111一侧，薄膜晶体管层在过渡区FA内包括至少一个底切结构，底切结构包括至少一层无机层和至少一层有机层，有机层远离衬底111的一侧至少设置一层无机层，有机层在衬底111上的正投影位于临近有机层且远离衬底一侧的无机层在衬底111上的正投影内。
本申请实施例通过在显示面板的过渡区内设置由有机层和无机层形成的底切结构，使得在显示面板的后续制程中，有机发光层在该底切结构处断开，封装层封装并保护断裂处的有机发光层，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
具体的，在一种实施例中，请参照图1至图5，在显示区AA内，本申请实施例提供的显示面板包括从下到上依次设置的衬底111、遮光层112、缓冲层113、半导体有源层121、第一栅极绝缘层131、第一栅极层122、第二栅极绝缘层132、第二栅极层123、第一层间绝缘层133、第二层间绝缘层134、第一源漏极层124、第一平坦层141、第二源漏极层126、第二平坦层143、第一电极层151和像素定义层160。在过渡区BA内，本申请实施例提供的显示面板包括从下到上依次设置的衬底111、遮光层112、缓冲层113、第一栅极绝缘层131、第二栅极绝缘层132和第一层间绝缘层133。在光学器件区CA内，本申请实施例提供的显示面板仅包括衬底111。
其中，衬底111可以是刚性衬底或者柔性衬底，刚性衬底一般为玻璃衬底，柔性衬底通常包括第一有机衬底、第二无机衬底、以及位于第一衬底和第二衬底之间的无机衬底。半导体有源层121图案化形成薄膜晶体管的有源区，有源区又包括沟道区和位于沟道区两侧的掺杂区，半导体有源层121的材料可以是氧化物半导体材料，也可以是多晶硅材料或单晶硅材料等，在此不做限定。第一栅极层122图案化形成薄膜晶体管的第一栅极和电容的第一电极板，第二栅极层123图案化形成薄膜晶体管的第二栅极和电容的第二电极板，第一栅极和第二栅极同时对应于有源层121的沟道区。第一源漏极层124图案化形成薄膜晶体管的源极和漏极，源极和漏极分别通过贯穿第一栅极绝缘层131、第二栅极绝缘层132、第一层间绝缘层133和第二层间绝缘层134的过孔与沟道区两侧的掺杂区连接，第二源漏极层126图案化形成薄膜晶体管的过渡源极和过渡漏极，过渡源极通过贯穿第一平坦层141的过孔与源极连接，过渡漏极通过贯穿第一平坦层141的过孔与漏极连接，第一源漏极层124、第二源漏极层126的材料为无机金属材料，包括但不限于金属钼、铝、铜、钛、铬、银或其混合物。薄膜晶体管和电容等元器件、以及信号线共同构成显示面板的驱动电路。第一栅极绝缘层131设置于半导体有源层121和第一栅极层122之间，第二栅极绝缘层132设置于第一栅极层122和第二栅极层123之间，第一层间绝缘层133和第二层间绝缘层134设置于第二栅极层123和源漏极层124之间；其中，第一层间绝缘层133为无机层间绝缘层，第二层间绝缘层134为有机层间绝缘层，第一栅极绝缘层131、第二栅极绝缘层132和第一层间绝缘层133分别用于隔绝与其相邻的两导电层，第二层间绝缘层134用于平坦化第一层间绝缘层133，为第一源漏极层124的制备提供平坦的基底，包括但不限于亚克力、聚酰亚胺(PI)或苯并环丁烯(BCB)等的有机材料。第一平坦层141位于第一源漏极层124上，第二平坦层143位于第二源漏极层126上，第一平坦层141、第二平坦层143用于平坦化下层膜层，为上层膜层的制备提供平坦的基底，第一平坦层141、第二平坦层143一般为有机层，包括但不限于亚克力、聚酰亚胺(PI)或苯并环丁烯(BCB)等的有机材料。第一电极层151设置于第二平坦层143上，图案化形成间隔设置且相互独立的第一电极，第一电极通过贯穿第二平坦层143的过孔与下方薄膜晶体管的过渡源极或过渡漏极连接，从而与显示面板的驱动电路进行连接，第一电极层151的材料为无机金属材料，包括但不限于氧化铟锡、氧化铟锌、氧化铝锡、氧化铝锌、氧化铟镓锌、镁、银等。像素定义层160设置于第一电极层151上，图案化形成像素开口，像素开口与第一电极一一对应且暴露出第一电极。
在一种实施例中，如图1至图5所示，底切结构包括一个子底切结构，该子底切结构由一个无机层和位于该无机层下且与该无机层层叠接触的有机层构成。该有机层可以是单层有机膜层，也可以是双层有机膜层，还可以是三层有机膜层。
在第一种实施方案中，请参照图1和图2，图2示出了本申请实施例提供的显示面板的第二种结构示意图，具体示出了图1中虚线区域的放大效果图。在过渡区BA内，显示面板还包括第二层间绝缘层135和第一源漏极层125，第一源漏极层125位于第二层间绝缘层135上、与第二层间绝缘层135接触且完全覆盖第二层间绝缘层135，第二层间绝缘层135和第一源漏极层125构成下层为单层有机层上层为金属无机层的子底切结构，也即底切结构。过渡区BA内的第二层间绝缘层135与显示区AA内的第二层间绝缘层134为采用同一道制程制备得到，过渡区BA内的第一源漏极层125与显示区AA内的第一源漏极层124为采用同一道制程制备得到。第二层间绝缘层135在衬底111上的正投影位于第一源漏极层125在衬底111上的正投影内，且第二层间绝缘层135在衬底111上的正投影的边缘与第一源漏极层125在衬底111上的正投影的边缘之间的最小距离L大于第二层间绝缘层135的厚度D。
如图2所示，显示面板进一步还包括有机发光层170和封装层180，有机发光层170形成于像素定义层160上且延伸至过渡区BA，在过渡区BA内，有机发光层170覆盖第一源漏极层125和部分第一层间绝缘层133。封装层180形成于有机发光层170上，覆盖有机发光层170，对显示面板进行封装保护。封装层180可以是单层的无机封装层，也可以是无机层和有机层构成的多层叠层封装结构，多层叠层封装结构一般包括第一无机封装层、第二无机封装层、以及位于第一无机封装层和第二无机封装层之间的有机封装层，其中第一无机封装层与有机发光层170接触。由于有机发光层170的厚度很小，第一源漏极层125与第二层间绝缘层135形成底切结构，因此有机发光层170在该底切结构处断开，即位于第一源漏极层125上的有机发光层170和位于第一层间绝缘层133上的有机发光层170不连续。更进一步，由于第二层间绝缘层135在衬底111上的正投影的边缘与第一源漏极层125在衬底111上的正投影的边缘之间的最小距离L大于第二层间绝缘层135的厚度D，即第二层间绝缘层135相对于第一源漏极层125内缩的距离大于第二层间绝缘层135的厚度D，这进一步保证了有机发光层170在漏极层125和第二层间绝缘层135构成的底切结构处的断裂，且保证了位于第一层间绝缘层133上的有机发光层170不与第二层间绝缘层135接触，即位于第一层间绝缘层133上的有机发光层170与第二层间绝缘层135之间存在空隙且与位于第一源漏极层125上的有机发光层170之间断开。封装层180形成于有机发光层170上，覆盖有机发光层170且填充有机发光层170与第二层间绝缘层135之间的空隙和第一源漏极层125上有机发光层170与第一层间绝缘层133上有机发光层170之间的断口，有机发光层170完全被第一源漏极层125、第一层间绝缘层133、以及单层无机封装层/第一无机封装层所包覆，有机发光层170的周边不再存在水氧入侵的入口，从而阻隔了外界水氧通过有机发光层170的侧边进入显示区AA的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
在一种实施方案中，如图1所示，第一源漏极层125与第二层间绝缘层135形成的底切结构与显示区AA内的源漏极层124和/或第二层间绝缘层134不接触，该底切结构可以为一个也可以是两个或多个，两个或多个底切结构在过渡区BA内沿远离显示区AA的方向间隔设置。在另一种实施方案中，如图3所示，图3示出了本申请实施例提供的显示面板的第三种结构示意图，第一源漏极层125与源漏极层124相连接，第二层间绝缘层135与第二层间绝缘层134相连接，第一源漏极层125与第二层间绝缘层135形成的底切结构位于过渡区BA内，且与显示区AA内的相邻膜层相连接，在该实施方案中，底切结构也可以是两个或多个，其中一个底切结构与显示区AA内的膜层结构相接触，其余的底切结构在过渡区BA内沿远离显示区AA的方向间隔设置。
相应的，在过渡区BA内，显示面板可以包括第二源漏极层和有机层间绝缘层组成的叠层，或第二源漏极层和第一平坦层组成的叠层，或第一电极层和有机层间绝缘层组成的叠层，或第一电极层和第一平坦层组成的叠层，或第一电极层和第二平坦层组成的叠层，以构成与图1相类似的底切结构，起到第一种实施方案相同的技术效果。
在第二种实施方案中，如图4所示，图4示出了本申请实施例提供的显示面板的第四种结构示意图，在过渡区BA内，显示面板还包括第二层间绝缘层135、第一平坦层142和第二源漏极层127，第一平坦层142位于第二层间绝缘层135上，第一平坦层142在衬底111上的正投影与第二层间绝缘层135在衬底111上的正投影重合。第二源漏极层127位于第一平坦层142上与第一平坦层142接触且完全覆盖第一平坦层142。第二层间绝缘层135和第一平坦层142形成子底切结构的有机层，第二层间绝缘层135、第一平坦层142和第二源漏极层127构成下层为双层有机层上层为金属无机层的底切结构。过渡区BA内的第二层间绝缘层135与显示区AA内的第二层间绝缘层134为采用同一道制程制备得到，过渡区BA内的第一平坦层142与显示区AA内的第一平坦层141为采用同一道制程制备得到，过渡区BA内的第二源漏极层127与显示区AA内的第二源漏极层126为采用同一道制程制备得到。第一平坦层142在衬底111上的正投影位于第二源漏极层126在衬底111上的正投影内，且第一平坦层142在衬底111上的正投影的边缘与第二源漏极层126在衬底111上的正投影的边缘之间的最小距离大于第一平坦层142和第二层间绝缘层135的厚度之和。第二层间绝缘层135、第一平坦层142和第二源漏极层127构成的底切结构与图1所示的实施例中第一源漏极层125与第二层间绝缘层135形成的底切结构相类似，其具体实施方案及工作原理也与图1所示的实施例中第一源漏极层125与第二层间绝缘层135形成的底切结构相同，具体可参照上述实施例，在此不再赘述。
本实施方案通过在过渡区设置由第二层间绝缘层135、第一平坦层142和第二源漏极层127构成的底切结构，使得在显示面板的后续制程中，有机发光层在该底切结构处断开，封装层封装并保护断裂处的有机发光层，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
相应的，在过渡区BA内，显示面板可以包括第一电极层和有机层间绝缘层、第一平坦层组成的叠层，或第一电极层和有机层间绝缘层、第二平坦层组成的叠层，或第一电极层和第一平坦层、第二平坦层组成的叠层，以构成与图4相类似的底切结构，起到第二种实施方案相同的技术效果。
在第三种实施方案中，如图5所示，图5示出了本申请实施例提供的显示面板的第五种结构示意图，在过渡区BA内，显示面板还包括第二层间绝缘层135、第一平坦层142、第二平坦层144和第一电极层152，第一平坦层142设置于第二层间绝缘层135上，第二平坦层144设置于第一平坦层142上，第二平坦层144在衬底111上的正投影、第一平坦层142在衬底111上的正投影和第二层间绝缘层135在衬底111上的正投影相互重合。第一电极层152位于第二平坦层144上与第二平坦层144接触且完全覆盖第二平坦层144。第二层间绝缘层135、第一平坦层142和第二平坦层144形成子底切结构的有机层，第二层间绝缘层135、第一平坦层142、第二平坦层144和第一电极层152构成下层为三层有机层上层为金属无机层的底切结构。过渡区BA内的第二层间绝缘层135与显示区AA内的第二层间绝缘层134为采用同一道制程制备得到，过渡区BA内的第一平坦层142与显示区AA内的第一平坦层141为采用同一道制程制备得到，过渡区BA内的第二平坦层144与显示区AA内的第二平坦层143为采用同一道制程制备得到，过渡区BA内的第一电极层152与显示区AA内的第一电极层151为采用同一道制程制备得到。第二平坦层144在衬底111上的正投影位于第一电极层151在衬底111上的正投影内，且第二平坦层144在衬底111上的正投影的边缘与第一电极层151在衬底111上的正投影的边缘之间的最小距离大于第二平坦层144、第一平坦层142和第二层间绝缘层135三者的厚度之和。第二层间绝缘层135、第一平坦层142、第一平坦层144和第二源漏极层127构成的底切结构与图1所示的实施例中第一源漏极层125与第二层间绝缘层135形成的底切结构相类似，其具体实施方案及工作原理也与图1所示的实施例中第一源漏极层125与第二层间绝缘层135形成的底切结构相同，具体可参照上述实施例，在此不再赘述。
本实施方案通过在过渡区设置由第二层间绝缘层135、第一平坦层142、第一平坦层144和第二源漏极层127构成的底切结构，使得在显示面板的后续制程中，有机发光层在该底切结构处断开，封装层封装并保护断裂处的有机发光层，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
在另一种实施例中，如图6所示，图6示出了本申请实施例提供的显示面板的第六种结构示意图，在过渡区BA内，显示面板还包括第一源漏极层125、第一平坦层142和第二源漏极层127，第一平坦层142位于第一源漏极层125上，第二源漏极层127位于第一平坦层142上与第一平坦层142接触且完全覆盖第一平坦层142，第一平坦层142和第二源漏极层127构成下层为有机层上层为金属无机层的子底切结构，第一源漏极层125、第一平坦层142和第二源漏极层127构成底切结构。过渡区BA内的第一源漏极层125与显示区AA内的第一源漏极层124为采用同一道制程制备得到，第一平坦层142在衬底111上的正投影位于第一源漏极层125在衬底111上的正投影内，第二源漏极层127在衬底111上的正投影位于第一源漏极层125在衬底111上的正投影内或与第一源漏极层125在衬底111上的正投影重合。第一平坦层142和第二源漏极层127构成的子底切结构与第一种实施例中的子底切结构相类似，其具体实施方案及工作原理也与第一种实施例中的子底切结构相同，具体可参照上述实施例，在此不再赘述。在本实施例中，在第一平坦层142的下方设置第一源漏极层125，在第一层间绝缘层133和第一平坦层142之间形成一个台阶，延长了第一层间绝缘层133和第一平坦层142之间的路径，更进一步保证了后续制程中，有机发光层在第一平坦层142和第二源漏极层127构成的底切结构处的断裂，更进一步保证了位于第一层间绝缘层133上的有机发光层170不与第一平坦层142接触。
本实施例通过在过渡区设置由第一源漏极层125、第一平坦层142和第二源漏极层127构成的底切结构，第一源漏极层125作为子底切结构的台阶，进一步提高了在显示面板的后续制程中，有机发光层在该底切结构处的断开效果，封装层封装并保护断裂处的有机发光层，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
相应的，在过渡区BA内，显示面板可以包括第一源漏极层、第一平坦层和第一电极层组成的叠层，或第一源漏极层、第一平坦层、第二平坦层和第一电极层组成的叠层，或第二源漏极层、第二平坦层和第一电极层组成的叠层，以构成与图6相类似的底切结构，起到第二种实施例相同的技术效果。
在第三种实施例中，如图7所示，图7示出了本申请实施例提供的显示面板的第七种结构示意图，在过渡区BA内，显示面板还包括第二层间绝缘层135、第一源漏极层125、第一平坦层142和第二源漏极层127，第二层间绝缘层135和第一源漏极层125构成第一子底切结构，第一平坦层142和第二源漏极层127构成第二子底切结构，第一子底切结构和第二子底切结构叠层设置。第一子底切结构和第二子底切结构与第一种实施例中的子底切结构相类似，其具体实施方案及工作原理也与第一种实施例中的子底切结构相同，具体可参照上述实施例，在此不再赘述。第一平坦层142在衬底111上的正投影位于第一源漏极层125在衬底111上的正投影内，第二源漏极层127在衬底111上的正投影位于第一源漏极层125在衬底111上的正投影内或与第一源漏极层125在衬底111上的正投影重合。
本实施例通过在过渡区设置由双层子底切结构构成的底切结构，更进一步提高了在显示面板的后续制程中，有机发光层在该底切结构处的断开效果，封装层封装并保护断裂处的有机发光层，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
相应的，在过渡区BA内，显示面板可以包括第二层间绝缘层、第一源漏极层、第一平坦层和第一电极层组成的叠层，或第二层间绝缘层、第一源漏极层、第一平坦层、第二平坦层和第一电极层组成的叠层，或第二层间绝缘层、第二源漏极层、第二平坦层和第一电极层组成的叠层，或第一平坦层、第二源漏极层、第二平坦层和第一电极层组成的叠层，以构成与图7相类似的双层子底切结构，起到第三种实施例相同的技术效果。
本申请实施例还提供一种显示装置，该显示装置包括本申请实施例提供的任意一种显示面板，具备本申请实施例提供的任意一种显示面板的技术特征和技术效果，具体实施方式及工作原理请参照上述具体实施例，在此不再赘述。
本申请实施例还提供一种显示面板的制备方法，该制备方法包括：
步骤S1、制备衬底、遮光层、缓冲层、半导体有源层、第一栅极绝缘层、第一栅极层、第二栅极绝缘层、第二栅极层、第一层间绝缘层和第二层间绝缘层，如图8中（a）所示。
步骤S2、在光学器件区CA进行开孔，去除光学器件区CA内的其他膜层结构，仅保留衬底，去除过渡区BA内的第二层间绝缘层，同时在显示区AA制备源漏极过孔，如图8中（b）所示。
步骤S3、在第二层间绝缘层上制备第一源漏极层，并进行图案化，如图8中（c）所示。
步骤S4、在第一源漏极层上制备第一平坦层，并进行图案化，如图8中（d）所示。
步骤S5、在第一平坦层上制备第二源漏极层，并进行图案化，如图8中（e）所示。
步骤S6、在第二源漏极层上制备第二平坦层，并进行图案化，形成显示区AA内的第一电极过孔，去除过渡区BA和光学器件区CA内的第二平坦层，如图8中（f）所示。
步骤S7、在第二平坦层上制备第一电极层，并进行图案化，形成显示区AA内的第一电极，去除过渡区BA和光学器件区CA内的第一电极层，如图8中（g）所示。
步骤S8、在第一电极层上制备像素定义层，并进行图案化，形成显示区AA内的像素开口，去除过渡区BA和光学器件区CA内的像素定义层，如图8中（h）所示。
步骤S9、对过渡区BA进行干刻蚀处理，形成下层为有机层上层为无机层的底切结构，如图8中（i）所示。
具体的，对显示区AA内的膜层结构采用光阻进行保护，采用含有氧气的刻蚀气体对过渡区BA内的膜层进行干刻蚀处理。由于氧气对无机层基本无刻蚀作用，而对有机层有较强的刻蚀作用，因此，在该步骤中，氧气会对第一平坦层的侧边进行刻蚀，刻蚀速率可以通过调节制程参数进行调整，最高速率可以达到300纳米/分钟。该步骤中的干刻蚀技术的刻蚀气体简单、刻蚀速率调整空间大，有机层与无机层的刻蚀选择比（有机层和无机层的刻蚀速率之比）可以实现无穷大，有利于提升产能和降低成本。另一方面氧气对于有机层的刻蚀较为均一，可保证底切结构精确的线宽和良好的形貌。在一种实施例中，刻蚀完成后，第一平坦层在衬底上的投影位于第二源漏极层在衬底上的投影内，且第一平坦层在衬底上的投影的边缘与第二源漏极层在衬底上的投影的边缘之间的距离大于第一平坦层的厚度。
如图8中（i）所示的底切结构使得有机发光层在后续蒸镀过程中在该底切结构处断开，第一平坦层在衬底上的投影的边缘与第二源漏极层在衬底上的投影的边缘之间的距离大于第一平坦层的厚度的设置，使得有机发光层与第一平坦层无接触，从而使得后续封装层对显示面板进行封装时，无机封装层对断裂处有机发光层进行包覆式的封装和保护，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
综上所述，本申请实施例提供一种显示面板及其制备方法、显示装置，该显示面板通过在过渡区内设置底切结构，使得在显示面板的后续制程中，有机发光层在该底切结构处断开，封装层封装并保护断裂处的有机发光层，阻隔了外界水氧通过有机发光层的侧边进入显示区的路径，进而减小了外界水氧侵蚀显示面板的风险，提高了显示装置的稳定性，提升了产品性能。
以上对本申请实施例所提供的显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板，其中，包括显示区、光学器件区、以及位于所述显示区和所述光学器件区之间的过渡区，
    所述显示面板包括：
    衬底；
    薄膜晶体管层，设置在所述衬底一侧，所述薄膜晶体管层在所述过渡区内包括至少一个底切结构，所述底切结构包括至少一层无机层和至少一层有机层，所述有机层远离所述衬底的一侧至少设置一层所述无机层，所述有机层在所述衬底上的正投影位于临近所述有机层且远离所述衬底一侧的所述无机层在所述衬底上的正投影内。
  2. 如权利要求1所述的显示面板，其中，所述底切结构包括至少一个子底切结构，每个所述子底切结构包括一层所述无机层和至少一层所述有机层，在每个所述子底切结构中，所有的所述有机层相互层叠设置且均设置于所述无机层靠近所述衬底的一侧；
    在所述子底切结构中，远离所述无机层的所述有机层远离所述显示区的一侧在所述衬底上的正投影的边缘，与所述无机层远离所述显示区的一侧在所述衬底上的正投影的边缘之间的最小距离，大于所有所述有机层的总厚度。
  3. 如权利要求2所述的显示面板，其中，在所述过渡区内，所述显示面板还包括第一阵列层，所述第一阵列层设置于所述衬底和所述底切结构之间，所述第一阵列层包括至少一个无机绝缘层；
    靠近所述第一阵列层的所述子底切结构中，靠近所述衬底的有机层与所述第一阵列层中的无机绝缘层直接接触。
  4. 如权利要求3所述的显示面板，其中，所述底切结构包括一个所述子底切结构，所述子底切结构包括一层所述有机层、两层所述有机层或三层所述有机层。
  5. 如权利要求4所述的显示面板，其中，所述薄膜晶体管层包括有机层间绝缘层、第一源漏极层、第一平坦层、第二源漏极层、第二平坦层和第一电极层，所述子底切结构为以下叠层中的任意一种：
    所述第一源漏极层和所述有机层间绝缘层组成的叠层，
    所述第二源漏极层和所述有机层间绝缘层组成的叠层，
    所述第二源漏极层和所述第一平坦层组成的叠层，
    所述第二源漏极层和所述第一平坦层、所述有机层间绝缘层组成的叠层，
    所述第一电极层和所述有机层间绝缘层组成的叠层，
    所述第一电极层和所述第一平坦层组成的叠层，
    所述第一电极层和所述第二平坦层组成的叠层，
    所述第一电极层和所述有机层间绝缘层、所述第一平坦层组成的叠层，
    所述第一电极层和所述有机层间绝缘层、所述第二平坦层组成的叠层，
    所述第一电极层和所述第一平坦层、所述第二平坦层组成的叠层，
    所述第一电极层和所述有机层间绝缘层、所述第一平坦层、所述第二平坦层组成的叠层。
  6. 如权利要求3所述的显示面板，其中，所述底切结构包括一个所述子底切结构和第二无机层，所述第二无机层设置于所述子底切结构靠近所述衬底的一侧，所述子底切结构内的所有所述有机层在所述衬底上的正投影均位于所述第二无机层在所述衬底上的正投影内。
  7. 如权利要求6所述的显示面板，其中，所述薄膜晶体管层包括有机层间绝缘层、第一源漏极层、第一平坦层、第二源漏极层、第二平坦层和第一电极层，所述底切结构为以下叠层中的任意一种：
    所述第一源漏极层、所述第一平坦层和所述第一电极层组成的叠层，
    所述第一源漏极层、所述第一平坦层和所述第二源漏极层组成的叠层，
    所述第一源漏极层、所述第一平坦层、所述第二平坦层和所述第一电极层组成的叠层，
    所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层。
  8. 如权利要求3所述的显示面板，其中，所述底切结构包括层叠设置的第一子底切结构和第二子底切结构，所述第一子底切结构设置于所述第二子底切结构远离所述衬底的一侧。
  9. 如权利要求8所述的显示面板，其中，所述第一子底切结构内的所有所述有机层在所述衬底上的正投影位于所述第二子底切结构内的无机层在所述衬底上的正投影内。
  10. 如权利要求9所述的显示面板，其中，所述薄膜晶体管层包括有机层间绝缘层、第一源漏极层、第一平坦层、第二源漏极层、第二平坦层和第一电极层，所述底切结构为以下叠层中的任意一种：
    所述有机层间绝缘层、所述第一源漏极层、所述第一平坦层和所述第二源漏极层组成的叠层，
    所述有机层间绝缘层、所述第一源漏极层、所述第一平坦层和所述第一电极层组成的叠层，
    所述有机层间绝缘层、所述第一源漏极层、所述第一平坦层、所述第二平坦层和所述第一电极层组成的叠层，
    所述有机层间绝缘层、所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层，
    所述有机层间绝缘层、所述第一平坦层、所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层，
    所述第一平坦层、所述第二源漏极层、所述第二平坦层和所述第一电极层组成的叠层。
  11. 如权利要求3所述的显示面板，其中，所述第一阵列层延伸至所述显示区，在所述显示区内，所述显示面板还包括第二阵列层，所述第二阵列层设置于所述第一阵列层远离所述衬底的一侧，所述底切结构与所述第二阵列层间隔设置。
  12. 如权利要求3所述的显示面板，其中，所述第一阵列层延伸至所述显示区，在所述显示区内，所述显示面板还包括第二阵列层，所述第二阵列层设置于所述第一阵列层远离所述衬底的一侧，存在一个所述底切结构与所述第二阵列层连接设置。
  13. 如权利要求11所述的显示面板，其中，所述显示面板包括两个或多个所述底切结构，两个或多个所述底切结构在所述过渡区内沿远离所述显示区的方向间隔设置。
  14. 如权利要求12所述的显示面板，其中，所述第二阵列层包括无机金属层和有机绝缘层，所述有机绝缘层设置于所述无机金属层靠近所述衬底的一侧，所述有机层与所述有机绝缘层同层设置，所述无机层与所述无机金属层同层设置。
  15. 如权利要求13所述的显示面板，其中，所述第二阵列层包括无机金属层和有机绝缘层，所述有机绝缘层设置于所述无机金属层靠近所述衬底的一侧，所述有机层与所述有机绝缘层同层设置，所述无机层与所述无机金属层同层设置。
  16. 一种显示装置，其中，包括一显示面板，所述显示面板包括显示区、光学器件区、以及位于所述显示区和所述光学器件区之间的过渡区，
    所述显示面板包括：
    衬底；
    薄膜晶体管层，设置在所述衬底一侧，所述薄膜晶体管层在所述过渡区内包括至少一个底切结构，所述底切结构包括至少一层无机层和至少一层有机层，所述有机层远离所述衬底的一侧至少设置一层所述无机层，所述有机层在所述衬底上的正投影位于临近所述有机层且远离所述衬底一侧的所述无机层在所述衬底上的正投影内。
  17. 如权利要求16所述的显示装置，其中，所述底切结构包括至少一个子底切结构，每个所述子底切结构包括一层所述无机层和至少一层所述有机层，在每个所述子底切结构中，所有的所述有机层相互层叠设置且均设置于所述无机层靠近所述衬底的一侧；
    在所述子底切结构中，远离所述无机层的所述有机层远离所述显示区的一侧在所述衬底上的正投影的边缘，与所述无机层远离所述显示区的一侧在所述衬底上的正投影的边缘之间的最小距离，大于所有所述有机层的总厚度。
  18. 如权利要求17所述的显示装置，其中，在所述过渡区内，所述显示面板还包括第一阵列层，所述第一阵列层设置于所述衬底和所述底切结构之间，所述第一阵列层包括至少一个无机绝缘层；
    靠近所述第一阵列层的所述子底切结构中，靠近所述衬底的有机层与所述第一阵列层中的无机绝缘层直接接触。
  19. 如权利要求18所述的显示面板，其中，所述底切结构包括一个所述子底切结构，所述子底切结构包括一层所述有机层、两层所述有机层或三层所述有机层。
  20. 如权利要求18所述的显示面板，其中，所述底切结构包括层叠设置的第一子底切结构和第二子底切结构，所述第一子底切结构设置于所述第二子底切结构远离所述衬底的一侧。
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