WO2022233997A1 - Varactor à mems dans le plan - Google Patents

Varactor à mems dans le plan Download PDF

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Publication number
WO2022233997A1
WO2022233997A1 PCT/EP2022/062106 EP2022062106W WO2022233997A1 WO 2022233997 A1 WO2022233997 A1 WO 2022233997A1 EP 2022062106 W EP2022062106 W EP 2022062106W WO 2022233997 A1 WO2022233997 A1 WO 2022233997A1
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WO
WIPO (PCT)
Prior art keywords
electrode structure
electrode
actuator
substrate plane
electrical
Prior art date
Application number
PCT/EP2022/062106
Other languages
German (de)
English (en)
Inventor
Michael Stolz
Shashank Shashank
Bert Kaiser
Anton MELNIKOV
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of WO2022233997A1 publication Critical patent/WO2022233997A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/038—Microengines and actuators not provided for in B81B2201/031 - B81B2201/037
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/05—Type of movement
    • B81B2203/051—Translation according to an axis parallel to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping

Definitions

  • the present invention relates to MEMS components and methods for changing an electrical capacitance value of a MEMS component, in particular those MEMS components which change a capacitance value by moving parallel to a substrate plane. More particularly, the present invention relates to a varactor.
  • a MEMS varactor is a variable capacitance in which the change in capacitance is usually realized by changing the electrode spacing.
  • MEMS varactors typically have small tuning ratios (TR) of less than 5 because the electrode excursion required for tuning is very limited. The limitation is explained by the actuators that can be used. Normally this is a classic electrostatic or direct Coulombic attraction between the grounded electrode and the signal line (RF line). Because of such limitations as B. the pull-ln (PI) effect can be used for example only about a third of the initial distance between the electrodes for capacity variation. The use of this distance or gap is thus inefficient independent of the starting distance and leads to a small tuning ratio, which is defined as follows:
  • One object of the present invention is therefore to create MEMS components with a high tuning ratio based on an electrical capacitance.
  • the core idea of the present invention is to change an electrode of an electrode arrangement that forms an electrical capacitor in-plane, i.e. parallel to the substrate plane, and to provide a separate actuator element for this purpose, whereby a corresponding holding force is exerted on the moving electrode , which can reduce the pull-in effect, with which the effectively usable travel can be comparatively large and thus a high tuning ratio can also be achieved.
  • actuators with two or more parallel bars spaced apart from the substrate plane and isolated in discrete areas and mechanically connected to one another are suitable for this purpose, as well as an arrangement in which several capacitance values are increased or decreased simultaneously.
  • a MEMS component includes a substrate arranged in a substrate plane. Furthermore, an electrode arrangement is arranged, which has a first electrode structure and a second electrode structure, the second electrode structure being arranged parallel to the substrate plane opposite the first electrode structure in order to form an electrical capacitor.
  • the MEMS component includes an actuator which is coupled to the electrode arrangement and is designed to change an electrode spacing between the first electrode structure and the second electrode structure parallel to the substrate plane in order to change an electrical capacitance value of the electrical capacitor.
  • the actuator includes at least two beams that are spaced parallel to the substrate plane and are mechanically connected to one another in discrete areas, if necessary also electrically isolated there, which form a common movable element that is designed to move in-plane with respect to the substrate plane to move to change the electrode gap.
  • the force of the actuator can provide a restoring force or holding force for an electrode moved by the actuator, which can prevent or inhibit the Pu II-In effect from occurring.
  • a MEMS component comprises a substrate arranged in a substrate plane and an electrode arrangement which has a first electrode structure and a second electrode structure, the second electrode structure being arranged parallel to the substrate plane opposite the first electrode structure in order to have a first to form an electrical capacitor having a first capacitance value. Furthermore, a second electrical capacitor is arranged, which forms a second capacitance value and has a third electrode structure which, together with the first electrode structure or an additional fourth electrode structure provides the second electrical capacitance value.
  • An actuator device is provided, which is coupled to the electrode arrangement and is designed to set the first capacitance value and the second capacitance value independently of one another and/or to simultaneously increase or simultaneously reduce the first capacitance value and the second capacitance value.
  • a method for changing an electrical capacitance value of a MEMS component includes driving at least one beam of an actuator having at least two parallel to a substrate plane of the MEMS component spaced apart and insulated in discrete areas and mechanically connected to each other, which a form a common movable element to move the movable element in-plane relative to the substrate plane.
  • the method is carried out in such a way that an electrode spacing between a first electrode structure of an electrode arrangement and a second electrode structure of the electrode arrangement arranged parallel to the substrate plane is changed parallel to the substrate plane by the actuator generating a force by deforming a bar parallel to the substrate plane exerts on the electrode arrangement.
  • FIG. 1a shows a schematic plan view of a MEMS component according to one exemplary embodiment
  • FIG. 1b shows a schematic perspective view of the MEMS component from FIG. 1a;
  • FIG. 2a shows a schematic plan view of a MEMS component according to an embodiment, which has two capacitance values
  • FIG. 2b shows a schematic plan view of the MEMS component from FIG. 2a, in which electrode structures are deflected compared to the undeflected state of FIG. 2a;
  • FIG. 3 shows a schematic plan view of a MEMS component according to an exemplary embodiment, which has a dielectric layer between capacitor electrodes;
  • FIG. 4 shows a schematic plan view of a MEMS component, according to an exemplary embodiment, which has an increase in the surface area of the capacitor electrodes;
  • FIG. 5a shows a schematic plan view of a MEMS component according to an exemplary embodiment with a further increase in the surface area of the electrode structures
  • Fig. 5b shows a schematic plan view of a MEMS component according to an embodiment which extends the MEMS component from Fig. 5a in that an insulating layer is arranged on at least one of the electrode structures in the case of the capacitors;
  • FIG. 6 shows a schematic plan view of a MEMS component according to an exemplary embodiment in which a number of advantageous developments are implemented
  • FIG. 7 shows a schematic side sectional view of the MEMS component from FIG. 2a
  • FIG. 8 shows a schematic side sectional view of the MEMS component from FIG. 2a analogous to FIG. 7, but in a deflected state
  • FIG. 9 shows a schematic side sectional view of a MEMS component according to an embodiment, in which a signal line is arranged outside a plane of further electrode structures.
  • FIG. 10 is a schematic side sectional view of the MEMS device of FIG. 6.
  • Exemplary embodiments described below are described in connection with a large number of details. However, example embodiments can also be implemented without these detailed features. Furthermore, for the sake of comprehensibility, exemplary embodiments are described using block diagrams as a substitute for a detailed illustration. Furthermore, details and/or features of individual exemplary embodiments can be combined with one another without further ado, as long as it is not explicitly described to the contrary.
  • FIG. 1a shows a schematic plan view of a MEMS component 10 according to an embodiment.
  • the MEMS device includes a substrate 12, which may be, for example, a semiconductor material, such as including silicon, gallium arsenide, or the like, in accordance with MEMS designs. However, without restricting the exemplary embodiments described herein, any other carrier material can also be used as the substrate 12, for example a metallic material, a fiber material or the like.
  • the substrate 12 extends in a substrate plane, which is shown as an x/y plane, for example. In other words, the substrate plane x/y can result from the orientation of the substrate 12 .
  • the substrate plane can be that plane, for example, in which a used wafer is oriented, from which at least part of the MEMS component is formed.
  • the MEMS device further comprises an electrode arrangement comprising an electrode structure 14i and an electrode structure 14 2 .
  • the electrode structures 14i and 14 2 are arranged opposite one another to form or provide an electrical capacitor. The opposite arrangement is parallel to the substrate plane, so that a change in a distance 16 between the electrode structures 14i and 14 2 includes a movement of at least one of the electrode structures 14i and/or 14 2 parallel to the substrate plane x/y, which means in -plane oriented.
  • the MEMS component 18 comprises an actuator 18 which is coupled to the electrode arrangement.
  • FIG. 1a shows a mechanical coupling through a coupling element 22 and to the electrode structure 14 2
  • a mechanical coupling to the electrode structure 14 i can also take place as an alternative or in addition.
  • Actuation of actuator 18 may cause distance 16 to change, thus based on the capacitor equation a change in the electrical capacitance value provided by the electrical capacitor is achieved.
  • e 0 is the dielectric constant of the vacuum
  • e r is a relative permittivity of the medium between the electrodes
  • A is the electrode area
  • d is the electrode spacing.
  • the actuator comprises at least two bars 24i and 24 2 which are mechanically connected to one another at two or more discrete areas 26i, 26 2 and/or 26 3 and are thus fixed.
  • the connected beams form a common moveable element configured to move in-plane with respect to the substrate plane to change the electrode spacing by imparting movement 28 of the actuator 18 to at least one of the electrode structures.
  • the MEMS component 20 can also comprise only one of these arrangements, which is already indicated in FIG.
  • Different actuator principles can be used for deflecting the movable element or the beam 24i and/or 24 2 , including an electrostatic drive, a piezoelectric drive and a thermomechanical drive. That is, beams 24i and/or 24 2 may, but not necessarily, be formed as electrode structures.
  • the beams ver can also be electrically isolated from one another by means of the discrete regions 26 1 - 26 3 , e.g. by providing an electrical insulator as the connecting material, for example silicon oxide or silicon nitride.
  • a possible structure of the actuator 18 based on an implementation in a MEMS loudspeaker can be found in WO 2018/193109 A1, for example.
  • the coupling element 22 can be formed either electrically insulating or electrically conductive.
  • FIG. 1b shows a schematic perspective view of the MEMS component 10 from FIG. 1a. It is shown again there that the electrode structures 14i and 14 2 are arranged opposite one another parallel to the substrate plane.
  • An extension along a third Cartesian direction z is only chosen as an example and can, in particular, to generate a large capacitance, also be larger than a measurement of the electrode structures along x and/or y.
  • the actuator 18 or the beams 24i and/or 24 2 can be arranged in the same plane as the electrode structures 14i and 14 2 , but can also be arranged in another plane, which is easily possible by the movement of the actuator by means of mechanical elements aligned perpendicularly to the substrate plane into the plane of the electrode structures 14i and/or 14 2 .
  • the MEMS component 10 can be formed, for example, as a MEMS varactor or as a capacitive high-frequency switch.
  • the electrode structures 14i and 14 2 as well as the actuator 18 can be supported on the substrate 12 in different ways.
  • the electrode structure 14i can be supported along the z-direction gene and/or a clamping or support along the x-direction and/or y-direction.
  • the actuator can be mechanically connected to the substrate 12 in any plane and can be supported on it.
  • FIG. 2a shows a schematic plan view of a MEMS component 20 according to an embodiment.
  • the MEMS component 20 is formed such that two actuators 18i and 182 are provided in order to change distances 161 and 16 2 of a first electrical capacitor 32i and a second electrical capacitor 32 2 independently of one another or synchronously or in a specific relationship to one another , as represented by Ci and C2.
  • the actuators 181 and 18 2 are formed, for example, in such a way that three beams 24i, 242 and 24 ß on the one hand and 24 4 , 24s and 24b on the other hand are mechanically connected and fixed to one another in discrete areas 26i to 2610 or 2611 to 2620.
  • the beams 24i to 24b are each formed as electrode structures in order to generate electrostatic forces between adjacent beams so as to cause the actuator 181 and/or 182 to deflect.
  • the actuators 181 and/or 182 can be supported on the substrate 12 in that the beams 24i to 24b are implemented as clamped beams, with both one-sided and two-sided support or clamping being considered.
  • the electrical capacitors 32i and 32 2 have a common electrode 142 formed as a radio frequency (RF) line, by way of example only.
  • This line can be connected to a signal input 34 and/or a signal output 36 so that, for example, a corresponding signal is routed from the input 34 to the output 36 .
  • RF radio frequency
  • This signal line or electrode 14 2 can now have a capacitance value Ci or C2 applied to it on both sides or form part of it, whereby the electrodes 14i and 14 ß can be set jointly or independently of one another by means of the actuators 181 and 182 for this purpose.
  • an additional electrode structure can also be arranged, so that, for example, the electrode structures 14i and 142 on the one hand and the electrode structure 14 3 and an electrode structure arranged opposite thereto and not shown form a respective electrical capacitor .
  • FIG. 2b shows a schematic plan view of the MEMS component 20 in which, compared to the undeflected state of FIG. 2 are reduced compared to the distances 16i and 16 2 from FIG. 2a. From the capacitor equation, this results in an increased electrical capacitance of the capacitors 32i and 32 2 .
  • the electrical capacitor In the configuration of the MEMS device 20 in such a way that a signal line can be used to provide an electrode structure, it can be advantageous to form the electrical capacitor with an electrode which is on a floating potential or is contacted with a reference potential, such as 0 volts, ground/GND or the like.
  • the actuators 18i and 182 can be advantageously contacted in such a way that a control signal is applied to an inner bar 242 or 24s, indicated by a “+V”.
  • the reference potential GND can be applied to the outer bars 24i and 24z on the one hand and 24 4 and 24b on the other hand. If this potential is also provided for the electrodes 14i and 14 3 , the coupling elements 22i and/or 222 can be made electrically conductive, for example, in order to easily transfer the potential from the bar 24 3 to the electrode 14i and/or from the bar 24 4 to the electrode 14 3 or vice versa, which can keep circuit complexity low.
  • the MEMS component 20 can have a control device 37 which is designed to control the actuator 181 and/or 182 .
  • the control device 37 can provide the reference potential GND, for example.
  • a control potential 39, indicated as “+V”, can be provided for both actuators jointly or also individually.
  • the actuator 18i and/or 182 can be set up to set a linear relationship or a hyperbolic relationship, ie for example a quadratic relationship, between the control signal 39 and an effected change in the electrical capacitance value.
  • the electrical capacitance value can have a relationship that can be represented via a function, which can be set without any problems via the geometry, the forces caused, the change in the distance and the other geometric properties.
  • a hyperbolic connection i.e. in accordance with a hyperbola, is given, for example, by an inverse dependence of the capacity on the distance.
  • Hyperbolic motion can be obtained by linearly displacing the movable electrode, since the capacitance can be expressed as:
  • the control device 37 can alternatively or additionally be designed to control the actuator quasi-statically.
  • a change in the deflection of the actuator far away from a resonant frequency is understood to be quasi-static. This is effected, for example, with a control frequency of at most 80%, preferably at most 50% and particularly preferably at most 20% of the resonant frequency of the actuator.
  • the varactor 20 consists of the substrate 12 or handle wafer fixed RF line 14 2 , in which a high-frequency signal (HF signal) can propagate.
  • the grounded movable varactor electrodes 14i, 14 ⁇ are arranged on both sides of the RF line.
  • the varactor electrodes are mechanically connected to the LNED actuators 18 clamped on both sides in the example by means of connecting elements 22 and are at a defined distance (e.g. from 1 pm to 50 pm, preferably from 2.5 pm to 5 pm) from the RF line 14 2 removed.
  • the electrodes 14 i , 14 3 are also mechanically connected to the surrounding substrate 12 .
  • Embodiments have a connection that has low rigidity as the substrate 12 and the electrode 14i, 14 3 (spring-like). They can also be connected only by connec tion elements 22 to actuators and accordingly to the substrate and not be connected to the surrounding substrate 12 .
  • the connecting elements 22 can have a spring-like design, which means that the rigidity of these elements is less than the rigidity of the electrodes 14 i , 14 3 or the actuators 18 .
  • the distance 16 between the RF line 14 2 and the grounded electrodes 14i, 14 3 defines an initial capacitance, which for one electrode side of the varactor 20 can be described by a plate capacitor model with a simple formula: where e 0 - the dielectric constant of the vacuum, e G - relative permittivity of the medium, A - electrode area, g - initial electrode spacing. If an electrical voltage is now applied to the LNED actuators 18, this leads to the deflection of the actuators 18 in the chip level and thus to the displacement of the grounded varactor electrodes 14i, 14 3 by x in the direction of the RF line 14 2 . The distance 16 between the electrodes decreases, which increases the capacity of the system. e 0 e n A
  • the unitless number that describes the change in capacitance is called the tuning ratio (TR) and is defined as follows:
  • TR tuning ratio
  • the movement of the GND electrode is not realized by the classic electrostatic attraction to the RF line, but is made possible by the LNED actuators 18, which are decoupled from the parasitic electrostatic attraction.
  • This enables a more efficient utilization of the initial electrode spacing and a continuous movement of the GND plate almost up to touching the RF line 14 2 .
  • significantly higher TR can be achieved than the state of the art can offer.
  • FIG. 2b shows the varactor 30 in a deflected state in a plan view.
  • the electrode spacing is significantly smaller and the volume of the cavity is reduced. The reduction in volume can be used to dampen the system.
  • Embodiments of the varactor provide adjustable damping.
  • the cavities can be connected to the environment via openings in the lid and/or handle wafer (not shown). In this case, fluid (air) can flow into or out of the cavity via the openings.
  • the movement of the electrodes 14i, 14 3 relative to the RF line 14 2 is static or quasi-static.
  • Typical frequencies of the movement are between 0 and 100% of the resonant frequency of the actuators 18.
  • the range of ⁇ 0-20% is to be seen as quasi-static and is particularly preferred.
  • 0% of the resonant frequency is the static range.
  • Preferred frequencies are between ⁇ 0 - 50% of the resonance frequency.
  • FIG. 3 shows a schematic top view of a MEMS component 30 according to one exemplary embodiment.
  • This has a comparable structure to the MEMS component 20 and also has dielectric layers 38i and 382, which include a dielectric material, for example silicon oxide or silicon nitride or another dielectric material that can preferably be processed by means of MEMS processes, for example an electrically non-conductive material - conductive material.
  • the dielectric layers 38i and/or 38 2 can be continuous or, as shown, structured. While dielectric layer 38i is disposed between electrode structures 14i and 14 2 , dielectric layer 38 2 may be disposed between electrode structures 14 2 and 14 3 .
  • both dielectric layers 38i and 38 2 are shown structured the same, they may be structured differently from each other, or only one of the two layers may be structured or both layers may be unstructured.
  • only one of the two layers can be arranged in a structured or unstructured manner, or neither of the two layers can be arranged, as is shown, for example, in FIGS. 2a and 2b.
  • the dielectric layer can also be referred to as an insulating layer and, on the one hand, makes it possible to avoid an electrical short circuit between electrode structures 14i and 14 2 or electrode structures 142 and 143 that are moved towards one another or away from one another.
  • an anti-stiction function can be implemented in particular by structuring the layers 38i and/or 382.
  • a control device (not shown) of the MEMS component can be designed to apply a potential to an electrode structure affected by the mechanical contact , to allow charge carriers to flow away from the electrode structure, thus releasing the stiction.
  • dielectric layer 38i is shown as being disposed on electrode structure 14i and dielectric layer 382 is shown as being disposed on electrode structure 14ß , a dielectric layer may alternatively or additionally be disposed on electrode structure 142 be arranged, for example facing the electrode structure 14i and/or the electrode structure 14 2 .
  • FIG. 3 shows an alternative exemplary embodiment of a varactor 30 which contains alternative electrodes 14i, 14 3 with an insulating layer 38 .
  • This insulating layer is preferably interrupted.
  • the effective relative dielectric number in the electrode gap 16i, 162 increased.
  • inadvertent sticking of the electrode 14i , 143 to the RF line 142 is prevented.
  • a similar preferably discontinuous insulating layer can be patterned on the RF line 142.
  • FIG. 4 shows a schematic plan view of a MEMS component 40 which is designed in accordance with the further exemplary embodiments described herein.
  • the electrode structure 14i and the side of the electrode structure 142 facing the electrode structure 14i and/or the electrode structure 14 3 and/or the side of the electrode structure 14 2 facing the electrode structure 14 3 can have an enlarged surface. This can be done, for example, by means of topography and/or structuring.
  • One or both capacitors 32i and/or 32 2 can also be formed in such a way that one of the two electrode structures or both of the electrode structures also have no surface area enlargement.
  • the increase in surface area can also be understood to mean that at least one of the two electrode structures of a capacitor has a variable electrode spacing from one another at least in regions along a variable location, for example along the y-direction, on a respective electrode surface of the electrode structure. As illustrated for example by the distances 16M and 161-2 , the distance between the electrode structures 14i and 142 can change along the y-direction.
  • Such a configuration has several positive advantages for the capacitor and therefore the varactor.
  • the effective surface of the electrodes compared to the off design in Figs. 2a and 2b can be increased.
  • there is mechanical contact between the electrode surfaces of the electrode structures 14i and 14 2 on the one hand and 14 3 and 14 2 on the other hand on a comparatively smaller surface which advantageously leads to low adhesive forces between the electrode structures.
  • geometry-supported field inhomogeneities are generated by the non-planar shape of the surfaces, in particular when the electrode spacing changes.
  • FIG. 4 shows an alternative embodiment of a varactor 40 that includes alternative electrodes 14i, 142 and an alternative RF line 142.
  • FIG. In the top view it can be seen that neither the electrode 14i, 142 nor the RF line 142 are smooth have facing surfaces. Rather, the surfaces can have wavy or zigzag-shaped bulges that increase the respective surface. Zigzag-shaped bulges are provided as examples. The bulges on the two opposite surfaces cannot be periodic and not symmetrical.
  • Such an embodiment advantageously minimizes the contact surface between the electrode 14i , 14 ⁇ and the RF line 142 in the event of contact.
  • Another advantage of this design is the increase in the effective capacitance area and thus the capacitance value itself.
  • the geometry-based field inhomogeneities on the non-plane-parallel surfaces will lead to greater changes in capacitance when the electrode spacing 16i, 16 2 decreases or increases.
  • FIG. 5a shows a schematic plan view of a MEMS component 50i according to an embodiment.
  • the MEMS component 50i has an increase in the surface area of the electrode structures 14i, 14 2 and 14 3 .
  • this surface enlargement is designed in the manner of a comb, for example, so that a substantially constant spacing 16i and 16 2 in the capacitors 32i and 32 2 is obtained.
  • the feature that can also be implemented in the MEMS components 20, 30 and/or 40 is clearly recognizable, namely that the electrode structures 14i and 14 3 are only supported on the substrate above the actuator 18i or 18 2 , but towards the substrate 12 in the plane shown have a distance. This can bring about a homogeneous movement of the electrode structures 14i and 14 2 , it being entirely possible for additional stabilization along the z-direction to connect the electrode structures 14i and 14 3 to the substrate 12 in the plane shown.
  • Fig. 5b shows a schematic plan view of a MEMS component 50 2 , which expands the MEMS component 50i in such a way that the capacitors 32i and/or 32 2 on at least one of the electrode structures 14i and/or 14 2 or 14 2 and/or 14 3 the insulating layer 38 is arranged as a structured or unstructured layer.
  • the dielectric layer 38i on the electrode structure 14i, the dielectric layer 38 2 on a side of the electrode structure 14 2 facing the electrode structure 14i, the dielectric layer 38 3 on a side of the electrode structure 14 2 facing the electrode structure 14 3 and/or or the dielectric layer 384 can be arranged on the electrode structure 14 3 in a structured or unstructured manner.
  • FIG. 5b shows an alternative varactor 50 2 with an advantageously enlarged capacitance area and thus the capacitance value itself.
  • the alternative RF line 14 2 is structured like a comb, just like the alternative electrodes 14i, 14 3 . This comb-like structure is designed in such a way that the fingers of the respective combs of the electrodes 14i, 14 3 and 14 2 engage in one another. This advantageously increases the dielectric constant in the gap and improves the tuning ratio TR.
  • FIG. 6 shows a schematic plan view of a MEMS component 60 according to an exemplary embodiment in which several advantageous developments are implemented, which can be implemented individually or in combination and also individually or in combination with other MEMS components described herein can be combined.
  • the MEMS component 60 has modified electrical capacitors 32'i and 32' 2 .
  • each of the electrical capacitors is equipped with its own pair of electrodes.
  • the electrical capacitor 32'i has electrode structures 14i and 14 2 .
  • the electric capacitor 32' 2 has electrode structures 14 3 and 14 4 .
  • the electrode structures 14 2 and 14 4 are optionally arranged mechanically fixed on the high-frequency line 42, while the high-frequency line 42 in the exemplary embodiment in FIG. 6 is not part of the electrical capacitors 32'i and 32'2 , but with regard to the signal line properties is influenced by the variable capacitance of the electrical capacitors 32'i and 32' 2 .
  • the arrangement or attachment of the electrode structures 14 2 and 14 4 to the high-frequency line 42 can be effected by means of an insulator layer 44i and/or 44 2 . Although these can be formed from the same material as the dielectric layer 38 of the other exemplary embodiments, mechanical contacting and electrical insulation are more important here, while in other exemplary embodiments the dielectric constant of the material used may also be taken into account. Notwithstanding, suitable insulating materials may include, for example, silicon oxide and/or silicon nitride.
  • the electrode structures 14i and/or 14 3 can be electrically insulated from the respectively facing beams 26 3 and 26 4 , but this is optional.
  • electrical insulation can also be used, for example, when actuating the actuators 18 1 and 18 2 by applying a potential that is different from that used for the actuator.
  • an insulator layer 46i is provided between the coupling element 22i.
  • the coupling element 22i continued by an extension segment 48 in order to transmit the force of the actuator 18 1 flatly to the electrode structure 14i.
  • the insulator layer 46i can have the same or different materials compared to the insulator layers 44i and/or 44 2 .
  • a comparable effect can also be obtained by making the coupling element 22i electrically insulating. In such a case, the insulator layer 46i can be omitted while obtaining a comparable effect.
  • an insulator layer 46 2 is arranged between the extension segment 48 2 of the coupling element 22 2 and the electrode structure 14 3 in order to electrically insulate the bal ken 26 4 from the electrode structure 14 3 .
  • a comparable effect can also be obtained here by the coupling element 22 2 being formed in an electrically insulating manner.
  • all the electrode structures 14i, 14 2 , 14 3 and 14 4 are electrically insulated from a respective environment, which makes it possible to apply an individual potential to each of the electrode structures 14i to H 4 .
  • the electrical potential 52i is applied to the electrode structure 14i at one or more points.
  • the electrical potential 52 2 is applied to the electrode structure 14 2 at one or more points.
  • the electrical potential 52 3 can be arranged on the electrode structure 14 3 at one or more points, and the electrical potential 52 4 can likewise be applied to the electrode structure 14 4 at one or more points.
  • the potentials 52i to 52 4 can be provided, for example, by the control device 37, which is not shown in FIG.
  • Fig. 2a, 2b, 3, 4, 5a and 5b show representations in which at least one of the electrode structures forms at least part of a signal line for conducting a signal from a signal line input 34 to a signal line output 36 and the electrical capacitor is designed to Capacitance Ci and / or C 2 act on a signal line property of the signal line and the actuator is coupled to the other electrode structure in order to move this electrode structure in relation to the electrode structure of the signal line parallel to the substrate plane
  • Fig. 6 shows a representation in which Electrode structures 14 2 and 14 4 are mechanically firmly connected to the signal line.
  • the signal line 42 itself could easily provide an electrode structure for the capacitor 32i or 32 2 , as is described in connection with other exemplary embodiments.
  • the configuration of the electrode structures 14i and 14 3 as electrically insulated electrode structures that may be subjected to a floating potential remains unaffected by this.
  • FIG. 6 shows a further way of increasing the surface area, namely a kind of sawtooth pattern which interlocks in the opposing electrode structures 14i and 14 2 or 14 3 and H 4 .
  • This optional refinement can also be implemented independently of the other advantageous refinements in FIG. 6 .
  • the MEMS component 60 can also be provided with a dielectric layer, as is explained, for example, in connection with FIG. 3 or FIG. 5b.
  • a corresponding dielectric layer can be connected to at least one of the electrode structures, for example 14i and/or 14 2 or 14 3 and/or 14 4 .
  • a control device such as control device 37 for controlling at least part of the MEMS, such as actuators 18 1 and/or 18 2 , can be designed to protect against a change in the electrode spacing and/or in the event of mechanical contact between the electrode structures and the Dielectric layer to discharge the dielectric or to charge a predetermined potential with charge carriers. If both electrodes 14i and 14 2 or ' ⁇ 4z and 14 4 can be controlled independently of one another with regard to their potential, this also enables parallel control/charging/discharging of the electrode structures independently of one another.
  • the signal line is respectively opened on two opposite sides by two electrical capacitors 32i and 32 2 or 32'i and 32' 2 .
  • Corresponding MEMS components can be designed to drive the respective actuators 18i and 18 2 to within a tolerance range, such as im
  • MEMS devices consistent with embodiments described herein may be configured to adjust an electrical capacitance value of electrical capacitor 32i and/or 32 2 between a minimum capacitance value (largest electrode spacing) and a maximum capacitance value (minimum electrode spacing).
  • the actuators 18 1 and/or 18 2 or the actuator 18 can be designed to provide an actuator stroke that causes a ratio between the minimum capacitance value and the maximum capacitance value of at least 15.
  • the change in capacitance can be in a ratio of at least 1, at least 15 or preferably at least 20.
  • An upper limit of the ratio can alternatively or additionally be 1000, 500 or 100.
  • exemplary ratios of capacitance values between 1 and 100, 15 and 50 and/or 20 and 30 can be achieved.
  • the alternative varactor 60 has one/two additional electrodes 14i, ' ⁇ 4z and/or 14 2 , 14 4 in the gap 16 1 , 16 2 between the electrode 48i, 48 2 and the RF line 42 on which is mechanically connected to the electrode via an electrically insulating connection 44 and/or 46 me.
  • the electrodes 14i, 14 3 and/or 14 2 , 14 4 are floating electrodes, which each have a separate electrical connection 52i, 52 4 and/or 52 2 , 52 3 .
  • the floating electrodes 14i, 14 3 and/or 14 2 , 14 4 are normally maintained electrically floating or supplied with signals other than the GND and RF signals applied to the electrodes 48i, 48 2 and 48i, respectively, during operation of the varactor.
  • the RF line 42 can be given.
  • only one floating electrode with connection dielectric is used, normally the electrode 14i, 14 3 with insulator 44, together with an unstructured HF line 42.
  • this connection area is less rigid than the surrounding substrate and the electrodes themselves.
  • another exemplary embodiment is designed in such a way that the electrodes 48i, 48 2 and 14i, 14 3 are not connected to the surrounding substrate.
  • the electrodes are via the electrical contact 52i, 52 4 with a soft spring or a direct connection in a clamped state
  • 14 1 , 14 3 are connected to separate electrical connections, whereas the electrode 48i, 48 2 according to FIG. 3 is connected to an electrical signal (e.g. GND).
  • an electrical signal e.g. GND
  • the further electrodes 14i, 14 3 and/or 14 2 , 14 4 reduce the risk of the actuators self-actuating as a result of the DC component of the applied RF signal in the RF line and improve the operational reliability of the component.
  • the DC component of the RF signal increases with increasing RF signal power and frequency.
  • a floating electrode thus increases the HF power to be transmitted and the HF frequency at which the varactor 60 can be used reliably.
  • it is possible to use a continuous dielectric since there is less likelihood of the dielectric charging up and causing static friction, since the contact surfaces are metallic, ie electrically conductive.
  • FIG. 7 shows a schematic side sectional view of the MEMS component 20.
  • the representation here relates to the sectional plane AA from FIG. 2a.
  • the electrode structure 14 2 is at least part of a signal line. This is ver to the substrate 12 by an insulating layer 38 connected and supported thereon.
  • the actuators 18i and 18 2 can be arranged movably with respect to the substrate 12 .
  • FIG. 8 shows a schematic side sectional view of the MEMS device 20 analogous to FIG. 7, but in a deflected state such that due to the applied signals the distances 16 1 and 16 2 from FIG. 7 are reduced, as indicated by the distances 16'. i and 16' 2 is shown.
  • Figures 7 and 8 show the varactor 20 in the preferred embodiment in a view along section axis A-A. 7 shows the varactor 20 in a non-deflected state. 8 shows the varactor 20 in a deflected state.
  • the cavity defined by the distances 16' has a smaller volume.
  • Shown here is the necessary insulation layer 38, which is continuous in exemplary embodiments. This layer is preferably discontinuous.
  • Typical electrically insulating materials here are oxides, for example silicon oxides, or electrically non-conductive polymers.
  • the signal line which also serves as electrode structure 14 2 , is arranged outside the plane of electrode structures 14i and 14 3 and forms a kind of cover for the arrangement of actuators 18 1 and 18 2 .
  • a cover can, possibly in cooperation with a corresponding cover, both terms not restricting the orientation in space, used to control the movement of the electrode structures 14i du 14 3 on each other, since a fluid arranged between them can flow through the Column to De cover 14 2 or the floor is performed.
  • Such a fluidic resistance can set or influence an oscillation behavior of the electrodes, so that a spade between the electrode structures 14i and 14 2 on the one hand and 14 2 and 14 3 on the other hand as well as to the ground can be a design criterion of the MEMS component. It is clear in FIG. 9 that electrode structures, such as electrode structures 14i and 14 ⁇ arranged opposite one another, can move towards and/or away from one another or can change an electrode spacing of the capacitor formed by the electrode structures.
  • a constant distance between the electrode structures 14i and 14 ß can also lead to variable influences on a component if, for example, the distance between the electrode structures 14i and 14 2 increases at the same time and the distance between the electrode structures 14 2 and 14 3 is reduced to the same extent or vice versa.
  • Electrode structures 14i and 14 3 can be arranged parallel to the substrate plane x/y opposite one another. Electrode structures 14i and 14 2 on the one hand and 14 2 and 14 3 on the other hand can also have an offset perpendicular to the substrate plane to one another, with the electrode structures 14i and 14 2 , 14i and 14 3 and 14 2 and 14s each being able to form an electrical capacitor.
  • An actuator which is coupled to the arrangement of the electrodes, is designed to change an electrode spacing between at least two of the electrode structures parallel to the substrate plane.
  • the MEMS component 90 this is possible for all pairs of electrodes, for example in that a displacement of the electrode structures 14i and 14 3 towards one another influences the distance between them and a movement of the electrode structures 14i and 14 2 and/or the electrode structures 14 2 and 14 2 , relative to each other, meet this criterion to change an electrical capacitance value of the electrical capacitor.
  • the two actuators are designed to generate the in-plane movement, it also being possible for only one of the actuators to be provided with an electrode arranged on it.
  • two of the three electrode structures 14i and 14 3 are arranged in a common plane parallel to the substrate plane and a third electrode structure 14 2 of the three electrode structures is arranged offset perpendicular to the substrate plane.
  • the effect of this exemplary embodiment can also be obtained by arranging only the electrode structure pair 14i and 14 2 or 14 2 and 14 3 , for example, which can correspond to an offset of one of the electrode structures of the MEMS device 10 along the z-direction.
  • FIG. 9 shows a varactor 90 with an RF line 14 2 located above the actuation plane.
  • the gap 16 increases in comparison to the solutions shown up to now, for example in the MEMS component 20, so that the electrodes 14i and 14ß can perform a larger stroke.
  • Fig. 10 shows a schematic side sectional view of the MEMS device 60 in the BB plane.
  • Exemplary embodiments described above relate to MEMS components with one or more actuators, each of which comprises at least two beams connected to one another at discrete areas.
  • embodiments of the present inventions are not limited thereto.
  • other actuators can also be used, for example piezoelectric bending actuators and/or stack actuators, other forms of electrostatic or thermomechanical actuators or other functional principles, such as coil drives or the like .
  • Such a MEMS component comprises, for example with reference to Figures 2a and 2b, a substrate 12 arranged on a substrate plane and an electrode arrangement with a first electrode structure and a second electrode structure, for example the electrode structures 14i and 14 2 , which are parallel to the substrate plane are arranged face to face to form a first electrical capacitor 32i having a first capacitance value Ci. Furthermore, at least one third electrode structure 14 ß is provided, which is arranged parallel to the substrate plane opposite to the second electrode structure. A second electrical capacitor 32 2 with a second capacitance value C2 is formed with the second electrode structure 14 2 or with a fourth electrode structure 14 4 , see FIG. 6 for example.
  • An actuator device which is coupled to the electrode arrangement, is designed to set and/or simultaneously increase or reduce the first capacitance value and the second capacitance value independently of one another.
  • the actuator device may include the beam based actuators described herein or the other actuators just explained.
  • FIG. 1 For exemplary embodiments, relate to methods for driving such MEMS devices. While some methods for changing an electrical capacitance value of a MEMS component involve driving at least one beam of an actuator with at least two beams that are spaced apart parallel to a substrate plane of the MEMS component and are mechanically connected to one another in discrete areas form a common movable element in order to move the movable element in-plane with respect to the substrate plane, and be designed in such a way that an electrode spacing between a first electrode structure of an electrode arrangement and a second electrode structure of the electrode arrangement arranged parallel to the substrate plane is parallel to the If the substrate plane is changed by the actuator exerting a force on the electrode arrangement by deforming at least one beam parallel to the substrate plane, other methods for changing a first electrical capacitance value and a second electrical capacitance value of a MEMS component can be used, for example independently of the specific implementation of the actuator, comprising the step of: controlling an actuator device to create a first distance between a first electrode structure and a second electrode structure, which are
  • a second distance between at least one third electrode structure and a center of the third electrode structure, which forms a second electrical electrode structure, for example the second electrode structure 14 2 or an electrode structure 14 4 , and with which the third electrode structure forms a second electrical capacitor with the second capacitance value forms to reduce or increase.
  • Exemplary embodiments are based on the solution concept of adjusting the grounded varactor electrode, for example in one exemplary embodiment using electrostatically lateral LNED actuators.
  • This solves the pull-in problem for MEMS varactors described above, because the movement or pull-in of the GND plate is decoupled from the pull-in of the actuator. This makes it possible to use almost the entire distance between the electrodes, which enables TR factors of >30...50.
  • the problem of sticking does not exist here either, because the actuators represent a kind of additional return spring.
  • a linearity of the tunability can be achieved through a special form of the electrical voltage.
  • Another advantage of using the LNED actuator is that the chip depth and not the chip footprint can be used to increase the electrode area and thus the initial capacity C 0 . This leads to cost savings and enables miniaturization of the MEMS varactors with larger initial capacitances.
  • Exemplary embodiments relate to micromechanical components. These are required, for example, to translate electrical signals into mechanical effects.
  • deformation of the element results from an electrical input signal.
  • the deformable element is an actuator 18.
  • a deformable element consists of at least two spaced-apart, bal-shaped electrodes separated from each other by an electrically insulating layer 26, which may be discontinuous. Both electrodes are covered with different electrical potentials rule, as a result of which an electric field is spanned between the electrodes. As a result, the electrodes are deformed relative to one another. The direction of deformation can be influenced by the geometrical conditions of the electrodes. In the present case, a lateral deformation takes place within the substrate plane (in plane).
  • Some of the exemplary embodiments described herein relate to electrodes which are connected to one another via mechanical fixations and are designed to carry out a movement based on an electrical potential.
  • Some of the exemplary embodiments described herein relate to electrodes which are connected to one another via mechanical fixations and are designed to carry out a movement based on an electrical potential.
  • Beams that are designed to respond to an actuation by providing a force converted into a movement via the mechanical fixation (actuator), for example using piezoelectric materials or other actuatable substances.
  • the beams may be electrostatic, piezoelectric, magnetostrictive, and/or thermomechanical electrodes that provide deformation based on an applied potential.
  • the MEMS components presented below are layer stacks that consist of at least one substrate layer in which the electrodes and the passive elements are arranged. Further layers relate to a base, which is also referred to as a handle wafer, and a cover, which is also referred to as a cover wafer. Both cover and handle wafers are connected to the substrate plane using material-to-material methods, preferably bonding, which creates sealed gaps in the component. In this intermediate space, which corresponds to the device level, the deformable structural elements deform, in other words, the deformation takes place in plane.
  • the layers can, for example, have electrically conductive materials, for example doped semiconductor materials and/or metal materials.
  • electrically conductive materials for example doped semiconductor materials and/or metal materials.
  • the layered arrangement of electrically conductive layers enables a simple configuration, since electrodes (for deflectable elements) and passive ones can be separated from the layer by selective detachment elements can be formed. If electrically non-conductive materials have to be arranged, these materials are applied in layers by deposition processes.
  • 0% represents a static deflection.
  • the range 0-20% can be regarded as quasi-static.
  • the MEMS component is a varactor
  • the deflectable element is based on an electrostatic, piezo, thermomechanical deflection principle •
  • a change in capacity can be adjusted in a ratio of 1-100, preferably 15-50, particularly preferably 20-30
  • the change in capacitance can be adjustable in a ratio of up to 1000%
  • the RF line is connected to the handle wafer with an electrically insulated connection using an insulation layer.
  • the insulation layer can be broken. This means that the RF line is only partially connected to the handle wafer

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  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
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Abstract

L'invention concerne un composant à MEMS comprenant un substrat disposé dans un plan de substrat et un ensemble électrode comprenant une première structure d'électrode et une deuxième structure d'électrode, qui sont disposées en face l'une de l'autre parallèlement au plan de substrat afin de former un condensateur électrique. Le composant à MEMS comprend un actionneur, qui est couplé à l'ensemble électrode et conçu pour modifier une distance entre la première structure d'électrode et la deuxième structure d'électrode parallèlement au plan de substrat afin de modifier une valeur de capacité électrique du condensateur électrique. L'actionneur comporte au moins deux poutres espacées parallèlement au plan de substrat et reliées mécaniquement entre elles à des endroits discrets, lesquelles forment un élément mobile commun qui est conçu pour se déplacer dans le plan par rapport au plan de substrat afin de modifier la distance entre les électrodes.
PCT/EP2022/062106 2021-05-07 2022-05-05 Varactor à mems dans le plan WO2022233997A1 (fr)

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Citations (4)

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US20100176489A1 (en) * 2008-01-11 2010-07-15 Farrokh Ayazi Microelectromechanical systems structures and self-aligned harpss fabrication processes for producing same
DE102017203722A1 (de) * 2017-03-07 2018-09-13 Brandenburgische Technische Universität (BTU) Cottbus-Senftenberg Mems und verfahren zum herstellen derselben
WO2018193109A1 (fr) 2017-04-21 2018-10-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transducteur mems destiné à interagir avec un débit volumique d'un fluide et procédé de fabrication de celui-ci
US20200388440A1 (en) * 2019-03-22 2020-12-10 Ostendo Technologies, Inc. MEMS Tunable Capacitor Comprising Amplified Piezo Actuator and a Method for Making the Same

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US7749792B2 (en) 2004-06-02 2010-07-06 Carnegie Mellon University Self-assembling MEMS devices having thermal actuation
JP5133814B2 (ja) 2008-08-13 2013-01-30 ラピスセミコンダクタ株式会社 可変容量素子
US8373522B2 (en) 2010-02-03 2013-02-12 Harris Corporation High accuracy MEMS-based varactors
EP2664058B1 (fr) 2011-01-14 2017-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Composant micro-mécanique
US20140146435A1 (en) 2012-11-27 2014-05-29 Qualcomm Mems Technologies, Inc. In-plane mems varactor

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Publication number Priority date Publication date Assignee Title
US20100176489A1 (en) * 2008-01-11 2010-07-15 Farrokh Ayazi Microelectromechanical systems structures and self-aligned harpss fabrication processes for producing same
DE102017203722A1 (de) * 2017-03-07 2018-09-13 Brandenburgische Technische Universität (BTU) Cottbus-Senftenberg Mems und verfahren zum herstellen derselben
WO2018193109A1 (fr) 2017-04-21 2018-10-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transducteur mems destiné à interagir avec un débit volumique d'un fluide et procédé de fabrication de celui-ci
US20200388440A1 (en) * 2019-03-22 2020-12-10 Ostendo Technologies, Inc. MEMS Tunable Capacitor Comprising Amplified Piezo Actuator and a Method for Making the Same

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