WO2022214288A1 - Miroir permettant de réaliser une métrologie dans un système de faisceau laser, système de faisceau laser, source de rayonnement uve et appareil lithographique - Google Patents

Miroir permettant de réaliser une métrologie dans un système de faisceau laser, système de faisceau laser, source de rayonnement uve et appareil lithographique Download PDF

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Publication number
WO2022214288A1
WO2022214288A1 PCT/EP2022/056868 EP2022056868W WO2022214288A1 WO 2022214288 A1 WO2022214288 A1 WO 2022214288A1 EP 2022056868 W EP2022056868 W EP 2022056868W WO 2022214288 A1 WO2022214288 A1 WO 2022214288A1
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WO
WIPO (PCT)
Prior art keywords
metrology
layer
mirror
laser beam
resistance
Prior art date
Application number
PCT/EP2022/056868
Other languages
English (en)
Inventor
Willem Joan VAN DER ZANDE
Kutlu KUTLUER
John Philip MATHEW
Adriaan Roelof VAN ZWOL
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP21169691.9A external-priority patent/EP4080286A1/fr
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Priority to KR1020237034061A priority Critical patent/KR20230165243A/ko
Priority to CN202280026820.0A priority patent/CN117120932A/zh
Publication of WO2022214288A1 publication Critical patent/WO2022214288A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J2005/202—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • G02B5/0875—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction

Definitions

  • the present invention relates to a mirror for performing metrology as can be used in a laser beam system for an EUV radiation source.
  • the mirror can be applied to determine or estimate a power distribution of a laser beam received by the mirror.
  • a lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a lithographic apparatus may, for example, project a pattern at a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate.
  • a patterning device e.g., a mask
  • resist radiation-sensitive material
  • a lithographic apparatus may use electromagnetic radiation.
  • the wavelength of this radiation determines the minimum size of features which can be formed on the substrate.
  • a lithographic apparatus which uses extreme ultraviolet (EUV) radiation, having a wavelength within the range 4-20 nm, for example 6.7 nm or 13.5 nm, may be used to form smaller features on a substrate than a lithographic apparatus which uses, for example, radiation with a wavelength of 193 nm.
  • EUV extreme ultraviolet
  • an EUV radiation source In order to generate the required EUV radiation for pattering a substrate, an EUV radiation source is often applied.
  • an EUV radiation source may e.g. comprise a laser beam system, e.g. a system including a CO2 laser, that is arranged to deposit energy via a laser beam into a fuel, such as tin (Sn).
  • a laser beam system e.g. a system including a CO2 laser
  • a fuel such as tin (Sn).
  • tin (Sn) tin
  • accurate knowledge about the laser beam parameters such as power, power distribution, position, may be desirable.
  • Known solutions to determine said parameters may adversely affect the power or power distribution of the laser beam.
  • a mirror for performing metrology of a laser beam system in an EUV radiation source comprising: a mirror layer having a front surface configured to receive and reflect a laser beam of the laser beam system; a metrology layer arranged on a back surface of the mirror layer, the metrology layer comprising: a resistance grid comprising a plurality of electrically conducting segments and a plurality of electrical contacts or a resistance layer and a plurality of electrical contacts, whereby the plurality of electrical contacts of the resistance grid or the resistance layer are configured to be connected to a metrology instrument.
  • a metrology system comprising: a mirror according to the invention, and a measurement system configured to determine a resistance value of one or more electrically conductive segments of the resistance grid.
  • a laser beam system for an EUV radiation source comprising a laser beam source and one or more metrology systems according to the present invention.
  • an EUV radiation source comprising a laser beam system according to the present invention.
  • a lithographic system comprising an EUV radiation source according to the invention and a lithographic apparatus.
  • Figure 1 depicts a lithographic system comprising a lithographic apparatus and a radiation source according to the present invention
  • Figure 2 schematically depicts a cross-sectional view of a first mirror for performing metrology according to an embodiment of the present invention.
  • Figure 3 schematically depicts a cross-sectional view of a second mirror for performing metrology according to an embodiment of the present invention.
  • Figures 4a - 4c schematically depict plan views of portions of metrology layers as can be applied in an embodiment of the present invention.
  • Figures 5a and 5b schematically depict plan views of a portion of a mirror for performing metrology according to an embodiment of the present invention.
  • FIGS 6a, 6b and 7 schematically depict resistance grids as can be applied in an embodiment of the present invention.
  • Figure 8 schematically depicts a metrology system according to an embodiment of the present invention.
  • Figure 9 schematically depicts a resistance grid as can be applied in an embodiment of the present invention.
  • Figure 10 schematically depicts a laser beam system according to an embodiment of the present invention.
  • Figure 1 shows a lithographic system comprising a radiation source SO, e.g. an EUV radiation source according to the present invention, and a lithographic apparatus LA.
  • the radiation source SO is configured to generate an EUV radiation beam B and to supply the EUV radiation beam B to the lithographic apparatus LA.
  • the lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g., a mask), a projection system PS and a substrate table WT configured to support a substrate W.
  • a patterning device MA e.g., a mask
  • the illumination system IL is configured to condition the EUV radiation beam B before the EUV radiation beam B is incident upon the patterning device MA.
  • the illumination system IL may include a facetted field mirror device 10 and a facetted pupil mirror device 11.
  • the faceted field mirror device 10 and faceted pupil mirror device 11 together provide the EUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution.
  • the illumination system IL may include other mirrors or devices in addition to, or instead of, the faceted field mirror device 10 and faceted pupil mirror device 11.
  • the EUV radiation beam B interacts with the patterning device MA. As a result of this interaction, a patterned EUV radiation beam B’ is generated.
  • the projection system PS is configured to project the patterned EUV radiation beam B’ onto the substrate W.
  • the projection system PS may comprise a plurality of mirrors 13,14 which are configured to project the patterned EUV radiation beam B’ onto the substrate W held by the substrate table WT.
  • the projection system PS may apply a reduction factor to the patterned EUV radiation beam B’, thus forming an image with features that are smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied.
  • the projection system PS may include a different number of mirrors (e.g., six or eight mirrors).
  • the substrate W may include previously formed patterns. Where this is the case, the lithographic apparatus LA aligns the image, formed by the patterned EUV radiation beam B’, with a pattern previously formed on the substrate W.
  • a relative vacuum i.e. a small amount of gas (e.g. hydrogen) at a pressure well below atmospheric pressure, may be provided in the radiation source SO, in the illumination system IL, and/or in the projection system PS.
  • gas e.g. hydrogen
  • the radiation source SO shown in Figure 1 is, for example, of a type which may be referred to as a laser produced plasma (LPP) source.
  • a laser system 1 e.g. a laser beam system according to the present invention, which may, for example, include a CO2 laser, is arranged to deposit energy via a laser beam 2 into a fuel, such as tin (Sn) which is provided from, e.g., a fuel emitter 3.
  • tin is referred to in the following description, any suitable fuel may be used.
  • the fuel may, for example, be in liquid form, and may, for example, be a metal or alloy.
  • the fuel emitter 3 may comprise a nozzle configured to direct tin, e.g.
  • the laser system 1 may comprise one or more mirrors for metrology according to the present invention for the purpose of determining a characteristic of the laser beam 2.
  • the deposition of laser energy into the tin creates a tin plasma 7 at the plasma formation region 4.
  • Radiation, including EUV radiation, is emitted from the plasma 7 during de-excitation and recombination of electrons with ions of the plasma.
  • Collector 5 comprises, for example, a near-normal incidence radiation collector 5 (sometimes referred to more generally as a normal-incidence radiation collector).
  • the collector 5 may have a multilayer mirror structure which is arranged to reflect EUV radiation (e.g., EUV radiation having a desired wavelength such as 13.5 nm).
  • EUV radiation e.g., EUV radiation having a desired wavelength such as 13.5 nm.
  • the collector 5 may have an ellipsoidal configuration, having two focal points. A first one of the focal points may be at the plasma formation region 4, and a second one of the focal points may be at an intermediate focus 6, as discussed below.
  • the laser system 1 may be spatially separated from the radiation source SO. Where this is the case, the laser beam 2 may be passed from the laser system 1 to the radiation source SO with the aid of a beam delivery system (not shown) comprising, for example, suitable directing mirrors and or a beam expander, and or other optics.
  • a beam delivery system (not shown) comprising, for example, suitable directing mirrors and or a beam expander, and or other optics.
  • the laser system 1, the radiation source SO and the beam delivery system may together be considered to be a radiation system.
  • Radiation that is reflected by the collector 5 forms the EUV radiation beam B.
  • the EUV radiation beam B is focused at intermediate focus 6 to form an image at the intermediate focus 6 of the plasma present at the plasma formation region 4.
  • the image at the intermediate focus 6 acts as a virtual radiation source for the illumination system IL.
  • the radiation source SO is arranged such that the intermediate focus 6 is located at or near to an opening 8 in an enclosing structure 9 of the radiation source SO.
  • Figure 1 depicts the radiation source SO as a laser produced plasma (LPP) source, any suitable source such as a discharge produced plasma (DPP) source or a free electron laser (FEL) may be used to generate EUV radiation.
  • LPP laser produced plasma
  • DPP discharge produced plasma
  • FEL free electron laser
  • Figure 2 schematically shows a cross-sectional view of a mirror for performing metrology 200 according to an embodiment of the present invention.
  • the mirror 200 may e.g. be applied in a laser beam system, e.g. a laser beam system in an EUV radiation source.
  • the mirror 200 comprises a mirror layer 210 having a front surface 210.1 and a back surface 210.2.
  • the front surface 210.1 of the mirror layer 210 is configured to receive (arrow 250) and reflect (arrow 252) a laser beam of a laser beam system.
  • a front surface of a mirror layer is assumed to be the surface of the mirror that faces, during use, the laser beam.
  • the front surface of the mirror layer as applied in a mirror according to the invention is deemed to be in the optical path of the laser beam, during use.
  • a back surface of the mirror layer of a mirror according to the invention refers to a surface that does not faces the laser beam 250.
  • the back surface 210.2 of the mirror layer 210 may also be considered a surface opposite the front surface 210.1 of the mirror layer 210.
  • the mirror 200 further comprises a metrology layer or metrology structure 220 that is arranged on the back surface 210.2 of the mirror layer 210.
  • the metrology layer 220 will not affect the reflection of the laser beam 250, 252.
  • adverse effects such as glint or a reduced reflectivity are advantageously eliminated.
  • the metrology layer 220 as applied in the mirror 200 according to the present invention comprises a resistance grid 230, the resistance grid 230 comprising a plurality of electrically conducting segments 230.1 and a plurality of electrical contacts 230.2.
  • the electrical contacts 230.2 are configured to be connected to a metrology instrument or measurement system. Locations where two or more electrically conducting segments 230.1 are connected may be referred to as nodes 230.3. Note that the electrical contacts 230.2 may also be referred to as nodes of the resistance grid 230.
  • the resistance grid 230 of the mirror 200 can be connected to a metrology instrument that is configured to determine, during use of the mirror 200, a resistance value of the electrically conductive segments 230.2 of the resistance grid 230 and, based on said resistance values, a temperature distribution of the resistance grid 230. Based on said temperature distribution, operational parameters of the received laser beam 250 may be derived. Such operational parameters can e.g. include a power of the received laser beam 250, a power distribution of the received laser beam 250, a position of the received laser beam 250, or a combination thereof.
  • layer refers to a structure or a part of a structure which is comparatively thin; i.e. a thickness of a layer, e.g. thickness Tm of the mirror layer 210 is small compared to the dimensions of the layer in a direction perpendicular to the thickness, e.g. in the indicated X-direction.
  • a layer may also be referred to as a stratum or substrate.
  • the thickness Tm may be small compared to the laser beam of the laser beam system that is measured.
  • the thickness of a layer may e.g. be -100 pm, or a few mm.
  • the width W of the mirror 200 may e.g.
  • the front surface 210.1 of the mirror layer 210 i.e. the surface facing, during use, the laser beam 250 may be a substantially flat surface or may be a curved surface, depending on the desired functionality of the mirror 200.
  • the surface 210.1 may have various shapes, e.g. a rectangular shape or a circular shape.
  • the layers of the mirror 200 e.g. the mirror layer 210 and the metrology layer 220 may be manufactured as separate components and then assembled to realize the mirror 200.
  • the mirror layer 210 may e.g. be a foil-like structure which is glued onto a top surface or front surface 220.1 of the metrology layer 220. Alternatively, the layers may be manufactured in sequence, e.g.
  • the front surface 220.1 of the metrology layer 220 refers to the surface of the metrology layer 220 that faces, during use, the laser beam 250. It is understood though that the laser beam 250 does not reach the metrology layer 220 but is substantially reflected by the mirror layer 210.
  • the electric contacts 230.2 are shown at a side surface of the metrology layer 220. As will be understood, the electrical contacts 230.2 may also be provided at other locations where they can be accessed, in order to them to a metrology instrument or measurement tool.
  • the resistance grid 230 as schematically shown in Figure 2, in particular the electrical conductive segments of the resistance grid, can be made from various materials and can be manufactured by various manufacturing techniques.
  • the resistance grid 230 can be realized by means of printing the desired pattern onto a surface of the metrology layer.
  • an ink containing an electrically conducting material can be printed onto the surface of the metrology layer.
  • an ink containing Ag-particles can be applied.
  • the resistance grid can be realized by etching a desired pattern into a surface of the metrology layer, thereby generating a pattern of trenches into the surface. Said trenches may then be filled with an electrically conductive material, in order to realize the resistance grid.
  • electrically conductive materials that can be applied in the present invention to realize the resistance grid 230 of the metrology layer 220 of the mirror 200 according to the present invention are Ag, Au, Pt, Cu, Al, Fe, W, Ni, Mo, Sn, Zn.
  • Other examples of materials to realize the resistance grid are semiconductor materials.
  • the resistance grid can be made from locally doped semiconductor structures.
  • the segments of the resistance grid can comprise NTC or PTC elements or materials.
  • the material as applied for the manufacturing of the electrically conductive segments 230.1 of the electrical grid 230 has a high thermal coefficient of resistance a, e.g. a > 0.0035 per degree C.
  • the material as applied for the manufacturing of the segments 230.1 of the resistance grid have a conductivity that is at least two orders of magnitude higher than the conductivity of the material of the metrology layer 220 itself.
  • the metrology layer 220 can e.g. be made from Si or Ge.
  • the resistance grid 230 is embedded in the metrology layer 220 of the mirror 200.
  • the metrology layer 220 may comprise a cover layer, which may also be referred to as a capping layer, that is applied onto the resistance grid 230. By doing so, a contact between the resistance grid 230 and the mirror layer 210 can be avoided.
  • the cover layer or capping layer is made from the same material as the metrology layer.
  • the cover layer may e.g. be deposited onto the grid surface using deposition techniques such as ALD, evaporation, etc.
  • Si02 can be used as material for the cover layer.
  • the metrology layer 220 can be made from a SOI substrate wherein the oxide forms a barrier and the resistance grid is formed on the semiconductor. Alternatively, a Germanium on insulator substrate may be applied as well.
  • the mirror layer 210 comprises multiple layers.
  • the mirror layer 210 may e.g. comprise a stack of layers made from different materials.
  • the mirror layer 210 can comprise a stack of alternatingly stacked layers of a first material and layers of a second material.
  • the first material or the second material comprises Ge and/or ZeSn.
  • the resistance grid 230 is arranged near the front surface 220.1 of the metrology layer 220.
  • the resistance grid 230 can also be arranged closer to the bottom surface 220.2 of the metrology layer 220.
  • the width W of the metrology layer 220 is shown to be equal to the width of the mirror layer 210. It can be pointed out that this need not be the case.
  • the metrology layer 220 may also be wider or narrower than the mirror layer 210.
  • the shape of the metrology layer 220, in particular the shape of the front surface 220.1 of the metrology layer 220 need not have the shape of the bottom surface of the mirror layer 210 either.
  • the metrology layer e.g. metrology layer shown 220 shown in Figure 2
  • the metrology layer comprises more than one resistance grid.
  • Figure 3 schematically shows such an embodiment.
  • Figure 3 schematically shows a mirror for performing metrology 300 according to the present invention, the mirror for performing metrology 300 comprising a mirror layer 310 and a metrology layer 320, the metrology layer 320 comprising two resistance grids 332 and 334.
  • both resistance grids are embedded in the metrology layer 320.
  • the resistance grids 332 and 334 as shown can e.g. each comprise a plurality of electrically conductive segments 332.1, 334.1 and a plurality of electrical contacts 332.2, 334.2 which are configured to be connected to a metrology instrument.
  • the mirror for performing metrology according to the present invention may comprises multiple metrology layers, whereby each metrology layer comprises a resistance grid or resistance layer.
  • each resistance grid can be embedded in a different metrology layer or substrate, stratum or disk. Is such case, when one of the resistance grids would be defective, it may be replaced by replacing the metrology layer containing it.
  • the mirror for performing metrology 300 further comprises a cooling layer or cooling structure 340 that is configured to cool the mirror layer 310 that receives and reflects, during use, the laser beam 350, 352.
  • the mirror according to the invention in particular the mirror layer of the mirror according to the invention, may heat up during operation.
  • the mirror according to the invention in particular the mirror layer of the mirror according to the invention, may heat up during operation.
  • the mirror for performing metrology as applied in an optical path of the laser system would have a reflectivity of 99 %, there would still be approx. 300 W being dissipated by the mirror. Without taking suitable cooling measures, this could result in an unwanted or unacceptable heating of the mirror.
  • the cooling layer or cooling structure 340 as applied in an embodiment according to the present invention can e.g. be manufactured from a material having a good thermal conductivity, e.g. Cu or Al, and may comprise a plurality of cooling channels 340.1 through which a cooling fluid, e.g. water, can be made to flow. Alternatively or in addition, depending on the required cooling effort that is needed, the cooling layer may also be provided with one or more cooling fins which can then be cooled by means of a gas flow or a liquid flow.
  • the cooling layer 340 as applied in an embodiment of the present invention can e.g. be mounted to a bottom surface 320.2 of the metrology layer 320 of the mirror for performing metrology 300.
  • the mirror for performing metrology 200 as schematically shown in Figure 2 may also be equipped with a cooling layer or cooling structure, similar to cooling layer or structure 340.
  • the metrology layer 320 may be directly deposited on cooling layer or cooling structure 340 or can be attached to it using chemicals or adhesives or by physical means such as clamping.
  • FIGs 4a, 4b and 4c schematically show plan views of portions of a mirror for performing metrology according to the present invention, in particular portions of a metrology layer 420 as can be applied in a mirror for performing metrology according to the present invention.
  • the metrology layer 420 as shown comprises a resistance grid 432, 434, 436, the resistance grid comprising a plurality of electrically conductive segments and a plurality of contacts.
  • the resistance grid 432 can be assumed to be printed onto a surface of the metrology layer 420.
  • the resistance grid thus forms a thin layer of electrically conductive material that is deposited, e.g.
  • the resistance grid 434 includes electrically conductive segments 434.1 that are embedded in trenches 434.3 that are etched into the front surface 420.2 of the metrology layer 420.
  • electrical contacts 434.2 can be realized by etching protrusions into the front surface and filling the protrusions with an electrically conductive material.
  • the trenches 436.3 used to create the electrically conductive segments 434.1 of the resistance grid 436 extend until the edge or side surface 420.3 of the metrology layer 420. Electrical contacts 436.2 may then be formed on the side surface 420.3 on the end surfaces of the material embedded in the trenches 436.3.
  • the metrology layer can e.g. be made from a silicon substrate.
  • a substrate can e.g. be 1 - 10 mm thick.
  • the resistance grid as applied can be printed or etched and deposited on a top or front surface of the substrate.
  • the substrate may then be covered by a cover layer or capping layer, which serves as an insulating layer, in order to electrically insulate the resistance grid.
  • a cover layer or capping layer which serves as an insulating layer, in order to electrically insulate the resistance grid.
  • the metrology layer can be provided with electrical conductors, e.g. electrically conductive wires, that are connected to the electrical contacts and are accessible for a metrology instrument.
  • the metrology layer as applied can e.g. comprise vias for connecting the electrical wires to the electrical contacts.
  • the size of the cover layer or capping layer is smaller than the size of the metrology layer, such that the electrical contacts, which can e.g. be arranged along a contour or perimeter of the resistance grid, are easily accessible.
  • the electrical contacts may be located between the back surface of the mirror layer and the metrology layer and/or at the same level of the capping layer or cover layer. By doing so, the resistance grid remains uncovered outside the cover layer or capping layer.
  • the mirror layer may, in such embodiment, be arranged on the cover layer and may have the same or smaller size than the cover layer.
  • FIG 5a schematically shows a plan view of a portion of a mirror for performing metrology 500 according to the present invention including a metrology layer 420 as shown in Figure 4c, a mirror layer 510 and a cooling layer or cooling structure 530. Note that the gaps between the mirror layer 510 and the metrology layer 420 and the cooling layer 530 are merely applied for clarity purpose. It can further be pointed out that the metrology layer 420 is provided with a cover layer 422 such that the resistance grid is covered and remains insulated from the mirror layer 510 when the mirror layer 510 is mounted on the metrology layer 420.
  • the cooling layer 530 as schematically shown comprises cooling channels 530.1 configured to receive a cooling fluid for cooling the mirror layer 510 of the mirror 500 according to the invention.
  • the metrology layer 420 further comprises one or more RFID tags 550, e.g. passive or active RFID tags, that are configured to emit or transmit, during use, measurement data retrieved from the electrical contacts of the resistance grid of the metrology layer 420.
  • RFID tag or tags can e.g. be embedded in the metrology layer, e.g. underneath or adjacent to the resistance grid. By using such RFID tag or tags, a wiring between the electrical contacts and the metrology instrument is no longer needed.
  • the electrical contacts of the resistance grid are thus configured to be connected to a metrology instrument in a wireless manner.
  • Alternative means for wirelessly connecting the electrical contacts of the resistance grid to a metrology instrument can be considered as well.
  • Figure 6a schematically shows a first possible layout of a resistance grid 630 as can be applied in a mirror for performing metrology according to the present invention.
  • Figure 6a schematically a front or top view of a resistance grid 630 as can be applied in a metrology layer of a mirror for performing metrology according to the present invention.
  • the resistance grid 630 comprises a plurality of electrically conductive segments 630.1 and a plurality of electrical contacts 630.2.
  • the electrical contacts 630.2 are arranged along a contour or periphery of the resistance grid.
  • a total of 24 electrical contacts are shown, 4 of which are identified as NO, N6, N12, N18.
  • the electrical contacts 630.2 and the interconnections or crossings of two or more electrically conductive segments 630.1 can also be referred to as nodes of the resistance grid 630.
  • the nodes of the resistance grid can be subdivided into a first group or subset of external or accessible nodes an a second group or subset of internal or non-accessible nodes.
  • the electrical contacts of the resistance grid can be considered to be the first group of nodes, as they are accessible to be connected to a metrology instrument or device.
  • the resistance grid is a substantially rectangular grid comprising electrically conducting segments extending along either the X-axis or the Y-axis.
  • the resistance grid is provided with 16 electrical contacts. Note that this is merely an example, the number of electrical contacts may be larger or smaller.
  • Figure 6b schematically shows an alternative substantially rectangular grid also having a total of 24 electrical contacts or nodes distributed along a contour or periphery of the resistance grid 680.
  • the resistance grid 680 comprises a plurality of electrically conductive segments 680.1 and a plurality of electrical contacts 680.2.
  • FIG. 7 schematically shows an alternative layout of a resistance grid 730 as can be applied in a metrology layer of a mirror for performing metrology according to the present invention.
  • the resistance grid 730 comprises a plurality of electrically conductive segments 730.1 and a plurality of electrical contacts 730.2.
  • 8 electrical contacts, numbered NO to N8, can be seen.
  • Such a resistance grid can be referred to as a substantially radial grid having arc-shaped segments and segments that are extending radially outward.
  • the metrology layer as applied in the mirror for performing metrology according to the present invention can be used to determine an operating parameter or characteristic of a laser beam that is received, e.g. a power or power distribution of the laser beam as received, or a position of the laser beam as received.
  • This aspect of the present invention can e.g. be embodied as a metrology system.
  • a metrology system is provided, the metrology system comprising a mirror for performing metrology according to the present invention and a measurement system.
  • FIG. 8 schematically shows such a metrology system 800 according to the invention.
  • the metrology system 800 as shown comprises a mirror for performing metrology 810 according to the present invention and a measurement system 820.
  • the mirror for performing metrology 810 comprises a mirror layer 810.1, a metrology layer 810.2 comprising a resistance grid 812 having electrical contacts 814, and a cooling structure 810.3.
  • the measurement system 820 of the metrology system 800 is configured to determine, during use, a characteristic of a laser beam that is applied to the mirror for performing metrology 810.
  • the measurement system 820 as applied can be used to determine a power of the laser beam as received by the mirror 810, or a power distribution of the laser beam as received, or a position of the laser beam as received by the mirror 810.
  • the measurement system or instrument 820 as applied in an embodiment of the present invention is configured to, during use, determine a resistance value of one or more electrically conductive segments of the resistance grid 812 applied in the metrology layer 810.2 of the mirror for performing metrology 810 of the metrology system 800. This may also be referred to as determining a resistance distribution of the resistance grid.
  • the measurement system 820 may then determine a corresponding temperature of the electrically conductive segments. In order to do so, use can e.g. be made from the following equation (1):
  • R T the resistance of the electrically conductive segment at temperature T
  • R T0 the resistance of the electrically conductive segment at a reference temperature TO
  • a the thermal resistance coefficient of the electrically conductive segment.
  • this temperature or temperature distribution can be considered indicative for an operating characteristic of the laser beam that is received by the mirror 810.
  • the measurement system 820 of the metrology system 800 can be configured, in an embodiment, to apply a voltage or current to one or more of the electrical contacts of the resistance grid of the mirror for performing metrology and to measure a voltage at one or more of the remaining contacts.
  • Such measurement can e.g. be realized using the connection 830, e.g. a multi-wire cable, arranged between the metrology layer 810.2 of the mirror 810 and the measurement system 820.
  • the measurement system 820 can e.g. comprise a power source such as a voltage source or current source.
  • the measurement system or instrument 820 as applied in the metrology system according to the present invention can be configured to apply a voltage V0 to node NO, to apply a voltage of 0 volt to node N4 and to measure the voltage at one or more of the remaining contacts, e.g. at one or more of nodes Nl, N2, N3, N5, N6, N7.
  • Voltage V0 may also be referred to as the voltage difference that is applied to nodes NO and N4.
  • the measurement system may be configured to, in an embodiment, perform a plurality of measurements on the metrology layer, in particular on the resistance grid of the metrology layer.
  • the resistance grid comprises N electrical contacts
  • N contacts there are N contacts at which a voltage V0 can be applied.
  • a voltage V0 is applied at a particular node a zero voltage, or ground connection can be applied to any of the N-l remaining contacts.
  • N*(N-1) manners to apply a voltage difference between two electrical contacts of the grid can be performed by injecting currents in multiple, e.g. more than 2, electrical contacts and collects currents from one or more electrical contacts. As such, more than N*(N-1) measurements may be available.
  • Figure 9 schematically shows such a dens resistance grid 900 having a rectangular grid of small electrically conductive segments 910 and a number of electrical contacts 920 arranged along a contour or periphery of the grid 900.
  • the resistance grid may also be formed as a uniform electrically conductive layer or sheet, e.g. a layer or sheet made from or comprising Ag, Au, Pt, Cu, Al, Fe, W, or made from or comprising an electrically conductive ink or any other material having a sufficiently high coefficient of thermal conductivity.
  • the resistance grid as applied in the mirror to perform metrology is thus a resistance layer.
  • the metrology layer of the mirror comprises a resistance layer, e.g.
  • an electrically conductive sheet such as a Cu- or Al-sheet, the resistance layer having a plurality of electrical contacts connected to it, e.g. along a contour or perimeter of the resistance layer.
  • an electrically conductive sheet such as a Cu- or Al-sheet
  • the resistance layer having a plurality of electrical contacts connected to it, e.g. along a contour or perimeter of the resistance layer.
  • such embodiment may thus comprise a resistance layer, i.e. a continuous sheet or layer of electrically conductive material, instead of the dens resistance grid 900.
  • the measurement system as applied in the metrology system according to the present invention can be configured to determine or calculate values for the resistance of the electrically conductive segments or the value for the resistance distribution, or any operating characteristic derived therefrom, at a rate of 1 Hz.
  • a laser beam system for an EUV radiation source comprising a laser beam source and one or more mirrors for metrology according to the invention or one or more metrology systems according to the invention.
  • FIG 10 schematically shows an embodiment of a laser beam system 1000 according to the present invention.
  • the laser beam system 1000 comprises a laser beam source 1010 and two mirrors for metrology 1020 and 1030 and a measurement system 1040 configured to determine, during use, a resistance value of one or more electrically conductive segments of the resistance grid applied in the metrology layer of the mirrors 1020 and 1030.
  • the functionality of the measurement system 1040 is thus similar to the functionality of measurement system 820 shown in Figure 8.
  • the measurement system 1040 is however configured to determine the resistance values of electrically conductive segments for two mirrors, i.e. mirrors 1020 and 130, rather than just for one.
  • each mirror or mirrors 1020, 1030 may be equipped with its own measurement system for determining a resistance value, a resistance distribution or a temperature distribution of the resistance grid of the mirror, or an operating characteristic of the laser beam 1050 as received by the mirror.
  • Connections 862 and 864 schematically illustrate the wiring from the measurement system 1040 to the resistance grids of the mirrors 1020, 1030 to perform the required measurements as described above.
  • the mirrors 1020 and 1030 are arranged in an optical path of the laser beam 1050 and can thus be used to redirect the laser beam 1050.
  • the measurement system 1040 may thus be configured to determine an operating characteristic of the laser beam 1050 received by each of the two mirrors 1020, 1030, i.e. at different locations along the optical path of the laser beam 1050.
  • the operating characteristic of the laser beam 1050 generated by the laser beam source 1010 of the laser beam system 1000 is determined at different locations along the optical path, said information may also be used to determine or assess an operating characteristic of the mirrors as applied in the laser beam system.
  • the measurement system 1040 is configured to perform measurements on two consecutive mirrors along the optical path, anomalies in said measurements can be used to assess the operation of the mirrors 1020, 1030.
  • any anomaly observed between measurement data, or characteristics derived therefrom, of different mirrors, e.g. consecutive mirrors along an optical path may be an indication of the operating state or operating condition of the mirror.
  • the measurement system 1040 as applied in a laser beam system according to the present invention can be configured to determine an operating characteristic of a mirror of the laser beam system, based on a comparison of measurements on said mirrors or based on a comparison of a determined operating characteristic of the laser beam as received by each of the mirrors.
  • the measurement system 1040 as applied in the present invention can be configured to determine a power or power distribution of a received laser beam, e.g. based on a determined temperature distribution of the mirror layer of the mirror, whereby said temperature distribution is derived from resistance values of the electrically conductive segments of the resistance grid of the mirror or a resistance distribution of the resistance grid.
  • the calculation of the power of the received laser beam will thus be based on the temperature of the mirror, which is based on the dissipation of the mirror. Since a deterioration of the reflectivity will cause an increase in the dissipation of the mirror, this deterioration will result in an erroneous calculation of the power of the received laser beam.
  • the decreased reflectively of mirror 1020 would result in a calculated power of the laser beam as received by said mirror that is higher than the calculated power of the laser beam as received by the mirror 1030. Since mirror 1030 is upstream of the mirror 1020, these calculations cannot be right, indicating an anomaly in the operation of one of the mirrors. By comparing measurement data, or characteristics derived thereof, operating characteristics of the applied mirrors such as a likelihood of a defect, a deterioration state or a reflectivity can be determined or estimated.
  • Such information may e.g. be useful to determine whether or not a preventive maintenance or repair of a component of the laser beam system 1000.
  • the laser beam system 1000 further comprises a control system 1060 that is configured to control an operation of the laser beam source 1010, in particular to control the generation of the laser beam 1050.
  • the control system 1060 may in this respect be configured to determine control signals 1070 for controlling the laser beam source 1010.
  • the measurement data obtained by the measurement system 1040, or any operating characteristic derived therefrom can be provided, as feedback, to the control system 1070 of the laser beam system, as indicted by data signal 1080. Based on said data, the control system 1060 of the laser beam system can adjust an operation of the laser beam system, in particular an operating characteristic of the laser beam 1050 as generated by the laser beam source 1010.
  • a drift or displacement of the laser beam 1050 may be detected, whereupon a mirror steering system of the laser beam system 1000 can be configured to steer one or more mirrors of the laser beam system, in order to realign the laser beam.
  • the one or more mirrors that can be steered by such a mirror steering system may include one or more of the mirrors 1020, 1030 and/or may include additional mirrors of the laser beam system as applied.
  • an EUV radiation source comprising a laser beam system according to the present invention.
  • Such an EUV radiation source may advantageously be applied in a lithographic system according to the present invention, such system comprising an EUV radiation source according to the present invention and a lithographic apparatus.
  • Such an EUV radiation source and lithographic apparatus are schematically described with reference to Figure 1.
  • Embodiments of the invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or mask (or other patterning device). These apparatus may be generally referred to as lithographic tools. Such a lithographic tool may use vacuum conditions or ambient (non- vacuum) conditions.
  • embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the invention may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors.
  • a machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device).
  • a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g. carrier waves, infrared signals, digital signals, etc.), and others.
  • firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines, instructions, etc. and in doing that may cause actuators or other devices to interact with the physical world.
  • a mirror for performing metrology of a laser beam system in an EUV light source comprising: a mirror layer having a front surface configured to receive and reflect a laser beam of the laser beam system; a metrology layer arranged on a back surface of the mirror layer, the metrology layer comprising: a resistance grid comprising a plurality of electrically conducting segments and a plurality of electrical contacts, or a resistance layer comprising a plurality of electrical contacts, whereby the plurality of electrical contacts of the resistance grid or the resistance layer are configured to be connected to a metrology instrument.
  • the resistance grid comprises a plurality of nodes, each electrically conducting segment forming a connection between a pair of nodes of the plurality of nodes.
  • the metrology layer comprises a substrate layer.
  • the substrate layer comprises silicon.
  • the mirror comprises a stack of metrology layers arranged on the back surface of the mirror layer.
  • cooling layer comprises one or more cooling channels configured to receive a cooling fluid.
  • the resistance grid is a substantially rectangular grid or a substantially radial grid.
  • Metrology system comprising: a mirror according to any of the preceding clauses, and a measurement system configured to determine a resistance value of one or more electrically conductive segments of the resistance grid.
  • the measurement system is configured to: connect one or more of the electrical contacts to a power source; measure a voltage or current at one or more of the electrical contacts that are not connected to the power source; determine, based on the measured voltage or current, the resistance value of the one or more conductive segments of the plurality of conductive segments.
  • the operating characteristic comprises a power of the laser beam, a power distribution of the laser beam or a position of the laser beam.
  • Laser beam system for an EUV radiation source comprising: a laser beam source, and one or more mirrors for metrology according to any of the clauses 1 to 15 or one or more metrology systems according to any of the clauses 16 to 20. 22. The laser beam system according to clause 21, wherein the one or more mirrors or the one or more metrology systems are arranged in an optical path of a laser beam of the laser beam system.
  • the laser beam system according to clause 22 comprising two or more metrology systems and wherein the two or more metrology systems are configured to determine an operating characteristic of the laser beam received by each of the two or more mirrors of the two or more metrology systems.
  • a measurement system of the two or more metrology systems is configured to determine an operating characteristic of a mirror of the two or more metrology systems, based on a comparison of the determined operating characteristic of the laser beam as received by each of the two or more mirrors of the two or more metrology systems.
  • An EUV radiation source comprising a laser beam system according to any of the clauses 21 to 25.
  • a lithographic system comprising an EUV radiation source according to clause 26 and a lithographic apparatus.

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  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
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  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
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  • Electromagnetism (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un miroir permettant de réaliser la métrologie d'un système de faisceau laser dans une source de lumière UVE, le miroir comprenant : - une couche miroir ayant une surface avant conçue pour recevoir et réfléchir un faisceau laser du système de faisceau laser ; - une couche de métrologie disposée sur une surface arrière de la couche miroir, la couche de métrologie comprenant une grille de résistance comprenant une pluralité de segments électriquement conducteurs et une pluralité de contacts électriques configurés pour être connectés à un instrument de métrologie.
PCT/EP2022/056868 2021-04-08 2022-03-16 Miroir permettant de réaliser une métrologie dans un système de faisceau laser, système de faisceau laser, source de rayonnement uve et appareil lithographique WO2022214288A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020237034061A KR20230165243A (ko) 2021-04-08 2022-03-16 레이저 빔 시스템에서 계측을 수행하기 위한 미러, 레이저 빔 시스템, euv 방사선 소스 및 리소그래피 장치
CN202280026820.0A CN117120932A (zh) 2021-04-08 2022-03-16 激光束系统中的用于执行量测的反射镜、激光束系统、euv辐射源以及光刻设备

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EP21167393 2021-04-08
EP21167393.4 2021-04-08
EP21169691.9 2021-04-21
EP21169691.9A EP4080286A1 (fr) 2021-04-21 2021-04-21 Miroir pour la réalisation de métrologie dans un système de faisceau laser, système de faisceau laser, source de rayonnement uv extrême et appareil lithographique

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3939706A (en) * 1974-04-10 1976-02-24 The Boeing Company High energy sensor
US4692623A (en) * 1986-02-13 1987-09-08 The United States Of America As Represented By The Secretary Of The Army Precision laser beam positioner and spatially resolved laser beam sampling meter
US5172392A (en) * 1990-06-26 1992-12-15 Electricite De Strasbourg, S.A. Apparatus for the analysis in continuous mode and in impulse mode of the distribution of energy within a power laser beam and the alignment of this latter
US20210066877A1 (en) * 2018-02-20 2021-03-04 Asml Netherlands B.V. Sensor System

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3939706A (en) * 1974-04-10 1976-02-24 The Boeing Company High energy sensor
US4692623A (en) * 1986-02-13 1987-09-08 The United States Of America As Represented By The Secretary Of The Army Precision laser beam positioner and spatially resolved laser beam sampling meter
US5172392A (en) * 1990-06-26 1992-12-15 Electricite De Strasbourg, S.A. Apparatus for the analysis in continuous mode and in impulse mode of the distribution of energy within a power laser beam and the alignment of this latter
US20210066877A1 (en) * 2018-02-20 2021-03-04 Asml Netherlands B.V. Sensor System

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