WO2022206033A1 - 显示面板、显示装置及显示面板的成型方法 - Google Patents

显示面板、显示装置及显示面板的成型方法 Download PDF

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WO2022206033A1
WO2022206033A1 PCT/CN2021/138333 CN2021138333W WO2022206033A1 WO 2022206033 A1 WO2022206033 A1 WO 2022206033A1 CN 2021138333 W CN2021138333 W CN 2021138333W WO 2022206033 A1 WO2022206033 A1 WO 2022206033A1
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Prior art keywords
display panel
light
particles
electrode
substrate
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PCT/CN2021/138333
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English (en)
French (fr)
Inventor
彭兆基
方旭阳
李晓玲
刘明星
冯士振
甘帅燕
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合肥维信诺科技有限公司
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Application filed by 合肥维信诺科技有限公司 filed Critical 合肥维信诺科技有限公司
Priority to JP2023515230A priority Critical patent/JP2023527940A/ja
Priority to KR1020227040736A priority patent/KR20220162839A/ko
Priority to EP21934669.9A priority patent/EP4141941A4/en
Publication of WO2022206033A1 publication Critical patent/WO2022206033A1/zh
Priority to US17/992,261 priority patent/US20230089486A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present application relates to the field of display technology, and in particular, to a display panel, a display device, and a method for forming a display panel.
  • Electronic devices such as mobile phones and tablet computers need to increase the light transmittance of the corresponding area due to the integration of photosensitive devices such as front cameras.
  • photosensitive devices such as front cameras.
  • the structure of the device can be improved, it can meet the photosensitive requirements of the front camera and other devices, but at the same time there is a diffraction phenomenon, which affects the imaging effect of the front camera.
  • Embodiments of the present application provide a display panel, a display device, and a method for forming the display panel.
  • the display panel can meet the full-screen display requirements and can reduce the influence of diffraction on the imaging effects of devices such as front cameras.
  • a display panel has a first area, and the display panel includes: a substrate; A light-emitting device, the first light-emitting device includes a first electrode, a particle unit at least partially disposed in the same layer as the first electrode and surrounding the periphery of the first electrode, a first light-emitting module on the first electrode, and a light-emitting module on the first light-emitting module
  • the second electrode wherein, the particle unit includes an adhesive layer and particles distributed in the adhesive layer, and the orthographic projection of at least part of each of the at least part of the particles on the substrate is different from the orthographic projection of the first electrode on the substrate overlap.
  • a display device including the above-mentioned display panel.
  • a method for forming a display panel including: forming a patterned first metal layer on a substrate, where the patterned first metal layer includes a first metal layer distributed in a first area of the substrate electrode; a plurality of particle units distributed in an array are formed in the first area, each particle unit is at least partially in the same layer as the first electrode, and surrounds the periphery of one of the first electrodes, and the particle unit includes an adhesive layer and particles distributed in the adhesive layer , the orthographic projection of at least part of each of the at least part of the particles on the substrate does not overlap with the orthographic projection of the first electrode on the substrate; a light-emitting structure layer is formed on the first metal layer, and the light-emitting structure layer includes The first light emitting module of the first electrode; the second metal layer is formed on the side of the light emitting structure layer away from the first metal layer to form a display panel.
  • the display panel includes a substrate and a light-emitting device layer, the light-emitting device layer includes a first light-emitting device disposed in a first region, and the first light-emitting device includes a first light-emitting device.
  • the electrode, the first light-emitting module and the second electrode are used to meet the full-screen display requirements of the display panel.
  • the first light-emitting device further includes a particle unit
  • the particle unit is at least partially disposed in the same layer as the first electrode and surrounds the periphery of the first electrode, and the particle unit includes an adhesive layer and particles distributed in the adhesive layer, each of at least part of the particles
  • the orthographic projection of at least part of the particles on the substrate does not overlap with the orthographic projection of the first electrode on the substrate, and the periodic arrangement of the first electrode is destroyed by the diffraction, refraction or reflection of external light at the disordered particles. Therefore, when a device such as a camera is integrated into the first area of the display panel, the influence of the diffraction phenomenon on the imaging effect of the device such as the camera can be reduced, and the imaging effect can be ensured.
  • FIG. 1 is a schematic top view of a display panel according to an embodiment of the present application.
  • Fig. 2 is a partial enlarged view at Q in Fig. 1;
  • Fig. 3 is the sectional view along M-M direction in Fig. 2;
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the present application.
  • FIG. 5 is a cross-sectional view along the N-N direction in FIG. 4;
  • FIG. 6 is a schematic flowchart of a method for forming a display panel according to an embodiment of the present application.
  • FIG. 7 to 11 are schematic structural diagrams corresponding to each step of a method for forming a display panel according to an embodiment of the present application.
  • the full-screen display panel is the future development trend, but the requirements of the full-screen display panel and the design of the front camera have become the main contradictions in this technology. This also requires that the optical characteristics of the full-screen display panel can support the under-screen camera function, which requires very high optical characteristics of the display panel.
  • the photographing area should have the characteristics of high-quality imaging, and at the same time, it needs to achieve the normal display effect as much as possible. From an optical principle, the pattern and film structure of the display area will have a strong diffraction effect on light, which is in conflict with the demand for high-quality imaging under the screen. How to design a low-diffraction screen in the UDC photo area is a matter of A major hotspot of current research.
  • the embodiments of the present application provide a display panel, a display device, and a molding method of the display panel, the display panel can meet the comprehensive display requirements, and at the same time, the influence of diffraction phenomenon on the imaging effect of the front camera and other devices can be reduced.
  • the following describes in detail a display panel, a display device, and a method for forming a display panel according to embodiments of the present application with reference to FIGS. 1 to 11 .
  • FIG. 1 to 3 are schematic top views of a display panel according to an embodiment of the present application
  • FIG. 2 is a partial enlarged view of Q in FIG. 1
  • the display panel 1 provided in this embodiment of the present application includes a substrate 10 and a light-emitting device layer 20 , and the light-emitting device layer 20 is stacked on the substrate 10 .
  • the display panel 1 has a first area AA1 and a second area AA2, and the second area AA2 surrounds at least part of the first area AA1.
  • the light emitting device layer 20 includes first light emitting devices 22 distributed in the first area AA1 in an array and second light emitting devices 21 distributed in the second area AA2 in an array.
  • the first light-emitting device 22 includes a first electrode 221 , a particle unit 224 disposed at least partially in the same layer as the first electrode 221 and surrounding the periphery of the first electrode 221 , a first light-emitting module 222 located on the first electrode 221 , and a first light-emitting module 222 located on the first electrode 221 .
  • the second electrode 223 on the module 222.
  • the second light emitting device 21 includes a third electrode 211 , a second light emitting module 212 on the third electrode 211 , and a fourth electrode 213 on the second light emitting module 212 .
  • the particle unit 224 includes an adhesive layer 224a and particles 224b distributed in the adhesive layer 224a, and at least part of each of the particles 224b has an orthographic projection on the substrate 10 and the first electrode 221 on the substrate 10
  • the orthographic projections of at least some of the particles 224b on the substrate 10 and the orthographic projection of the first electrode 221 on the substrate 10 may not overlap at all, and/or, at least The orthographic projection of the particles in the partial particles 224b on the substrate 10 and the orthographic projection of the first electrode 221 on the substrate 10 may partially overlap.
  • the orthographic projections of at least some of the particles 224b on the substrate 10 and the orthographic projections of the first electrodes 221 on the substrate 10 are staggered (ie, do not overlap at all).
  • the light-emitting device layer 20 includes a first light-emitting device 22 disposed in the first area AA1, and the first light-emitting device 22 includes a first electrode 221, a first light-emitting module 222 and a second electrode 223,
  • the first electrode 221 can be an anode
  • the second electrode 223 can be a cathode.
  • the first light emitting device 22 in the first area AA1 can meet the full-screen display requirements of the display panel 1 .
  • the particle unit 224 is at least partially disposed in the same layer as the first electrode 221 and surrounds the outer periphery of the first electrode 221, and the particle unit 224 includes an adhesive layer 224a and a Particles 224b, the orthographic projection of at least part of each of the particles 224b on the substrate 10 does not overlap with the orthographic projection of the first electrode 221 on the substrate 10, and the particles 224b are randomly distributed in the vicinity of the first electrode 221 , the external light is diffracted, refracted or reflected at the disordered particles, thereby changing the path of the external light, destroying the diffraction phenomenon caused by the periodic arrangement of the first electrodes, thereby reducing the diffraction, so that when the display panel 1 corresponds to the first area AA1 integrated with
  • a device such as a camera
  • the influence of diffracted light on the imaging effect of the device such as the camera can be reduced, and the imaging
  • the substrate 10 may be an array substrate 10 , including a substrate 11 , thin film transistors 12 arrayed on the substrate 11 , and a planarization layer 13 provided to cover each thin film transistor 12 .
  • the layer 20 may be stacked on the planarization layer 13 of the substrate 10 .
  • the corresponding second light emitting device 21 and the first light emitting device 22 can be driven by the thin film transistors 12 provided on the substrate 10 to ensure the display requirements of the display panel.
  • the second area AA2 may be arranged to completely surround the first area AA1, and certainly may also surround a part of the first area AA1.
  • both the second light-emitting device 21 and the first light-emitting device 22 may be organic light-emitting devices.
  • the light emitting device layer 20 further includes a pixel defining layer 23 , and the pixel defining layer 23 is disposed on the substrate 10 .
  • the pixel defining layer 23 is located on the planarizing layer 13 .
  • the pixel defining layer 23 has pixel openings, and the first The electrodes 221 and the third electrodes 211 are exposed at the corresponding pixel openings, respectively, and the first light-emitting module 222 and the second light-emitting module 212 are disposed at the corresponding pixel openings of the pixel defining layer 23 .
  • the pixel defining layer 23 is also disposed to cover the particle units 224 .
  • the first light emitting devices 22 are distributed in a first density array in the first area AA1 of the display panel 1
  • the second light emitting devices 21 are distributed in a second density array in the second area AA2 of the display panel 1, and the first density is equal to second density.
  • the number of particles 224b of the particle units 224 included in each first light-emitting device 22 is one or more, and the number of particles of the particle units included in at least two first light-emitting devices 22 is more than one particle.
  • the orthographic distribution patterns of the 224b on the substrate 10 are different from each other.
  • the number of particles 224b in the particle unit 224 included in one of the first light-emitting devices 22 of the display panel 1 may be five, and the projection connection lines of the five particles 224b on the substrate 10 are pentagons, and the other one
  • the number of particles 224b in the particle unit 224 included in the first light emitting device 22 is six, and the projected connection line of the six particles 224b on the substrate 10 is hexagonal.
  • the orthographic distribution patterns of one or more particles 224b of the particle units 224 included in each of the plurality of first light-emitting devices 22 of the display panel 1 may be different from each other, or different from each other, so that each The structure of the particle unit 224 corresponding to the first light-emitting device 22 has randomness, and through the diffraction, reflection or refraction of the external light at the disordered particles, the path of the external light is improved, and the diffraction caused by the periodic arrangement of the first electrode is destroyed. phenomenon, thereby reducing diffraction.
  • the difference in the number of particles 224b included in the at least two first light emitting devices 22 is greater than 0.
  • the above arrangement further ensures the phase disorder of the light passing through the display panel 1 from the outside world and reduces diffraction, so that when the display panel 1 integrates a front camera and other devices corresponding to the first area AA1, the diffraction is reduced and the imaging effect is guaranteed.
  • the ratio of the number of particles 224b included in the light emitting device layer 20 to the number of the first light emitting devices 22 included in the light emitting device layer 20 is greater than or equal to 50.
  • the orthographic projection of the particle unit 224 of each first light-emitting device 22 on the substrate 10 protrudes from the first electrode 221 surrounded by the particle unit 224
  • the orthographic projection on the substrate 10 for example, the orthographic projection of the particle unit 224 on the substrate 10 protrudes from the orthographic projection of the first electrode 221 surrounded by the particle unit 224 on the substrate 10 with a size ranging from 1 ⁇ m to 5 ⁇ m Arbitrary value, including two end values of 1 ⁇ m and 5 ⁇ m, can be selected as 2 ⁇ m, 3 ⁇ m or 4 ⁇ m.
  • the distribution area of the particles 224b can be ensured, the diffraction can be reduced, and it can be ensured that when the display panel 1 corresponds to the first area AA1 integrating a camera and other devices imaging effect.
  • the orthographic projection of the particle units 224 of each of the first light-emitting devices 22 on the substrate 10 mentioned in the embodiments of the present application protrudes from the orthographic projection of the first electrodes 221 surrounded by the particle units 224 on the substrate 10
  • the particle units 224 of each first light-emitting device 22 are arranged around the first electrode 221
  • the orthographic projection of the particle unit 224 on the substrate 10 surrounds the orthographic projection of the first electrode 221 on the substrate 10
  • the particle unit 224 is in the The orthographic projection on the substrate 10 extends away from the first electrode 221 along the extension direction of the substrate 10 to protrude from the orthographic projection of the first electrode 221 surrounded by the particle unit 224 on the substrate 10 , so that the particle unit 224 is at least partially A region located between two adjacent first electrodes 221 .
  • the particles 224b may be high-refractive index light-transmitting particles.
  • the high-refractive-index light-transmitting particles are composed of a high-refractive-index material. Specifically, the high-refractive-index material has a refractive index greater than 1.8, and further, the high-refractive-index material has a refractive index of 1.8-2.4.
  • the external light is diffracted or refracted at the disordered particles. Specifically, the external light is diffracted at the edge of the particle and refracted on the surface of the particle. The particle is used to change the path of the external light, and the diffraction phenomenon caused by the periodic arrangement of the first electrode is destroyed. Reduce diffraction.
  • the particles 224b include zirconia particles and the like.
  • other high-refractive-index light-transmitting particles can also be used as the particles, as long as randomly distributed particles can be formed around the first electrode, and the diffraction or refraction of the particles can destroy the diffraction caused by the regular arrangement of the first electrode. phenomenon, it is possible to reduce diffraction.
  • the particles 224b may be opaque particles. Through the diffraction or reflection of external light at the disordered particles, specifically, the external light is diffracted at the edge of the particle and reflected on the surface of the particle, which destroys the diffraction phenomenon caused by the periodic arrangement of the first electrode, thereby reducing diffraction.
  • the particles 224b include metal particles, such as aluminum particles and the like.
  • the particles can also be non-metal particles, such as carbon particles, as long as randomly distributed particles can be formed around the first electrode, and the regular arrangement of the first electrode can be destroyed by the diffraction or reflection of external light at the particles. The diffraction phenomenon caused by the diffraction can be reduced.
  • the diameter of the particles 224b ranges from any value between 0.1um and 1um.
  • the diameter of the particles 224b The value range can also be any value between 0.3um and 1um, including the two end values of 0.3um and 1um, and can be 0.4um, 0.6um, 0.8um and so on.
  • the particle 224b adopts the above-mentioned value range, which can not only ensure the change of the path of the light irradiated on the particle 224b, but also prevent the particle 224b from being too large to block most of the light and affect the imaging effect.
  • the number and size of the particles 224b in the particle units 224 included in each of the first light emitting devices 22 may be different.
  • the particle units 224 when the particle units 224 are non-conductive structural layers, the particle units 224 of the plurality of first light-emitting devices 22 may be arranged in the same layer and connected to each other. Of course, , which is an optional implementation manner. In some embodiments, the particle units 224 of two adjacent first light-emitting devices 22 may also be arranged at intervals. Through the above arrangement, regardless of whether the particles 224b are conductive particles or not, the first electrodes 221 can be effectively prevented from being electrically connected to each other due to the arrangement of the particle units 224, thereby ensuring the display effect.
  • the particle unit 224 can be made to at least partially cover the surface of the first electrode 221 away from the substrate, which facilitates the wrapping of the first electrode 221 by the particle unit 224 and reduces the diffraction probability.
  • the third electrodes 211 and the first electrodes 221 of the display panel 1 may be arranged in the same layer and be independent of each other and arranged at intervals.
  • the third electrodes 211 and the first electrodes 221 are anodes.
  • the fourth electrode 213 and the second electrode 223 of the display panel 1 may be disposed in the same layer, and the fourth electrode 213 and the second electrode 223 are both cathodes.
  • the fourth electrode 213 and the second electrode 223 may be One-piece structure and whole floor setting.
  • the first area AA1 of the display panel 1 may be the first display area
  • the second area AA2 of the display panel 1 may be the second display area
  • the first area AA1 of the display panel 1 may be the first display area.
  • the first display area and the second display area jointly display images to meet the full-screen display requirements of the display panel 1 .
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the present application
  • FIG. 5 is a cross-sectional view along the N-N direction in FIG. 4
  • an embodiment of the present application further provides a display device, including the display panel 1 of any of the foregoing embodiments.
  • the display panel 1 includes a first surface S1 and a second surface S2 opposite to each other, wherein the first surface S1 is a display surface.
  • the display device further includes a photosensitive member 2, the photosensitive member 2 is located on the side where the second surface S2 of the display panel 11 is located, and the position of the photosensitive member 2 corresponds to the position of the first area AA1.
  • the photosensitive component may be an image acquisition device for acquiring external image information.
  • the photosensitive component may be a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) image acquisition device, and in some other embodiments, the photosensitive component may also be a charge-coupled device (Charge-coupled Device, CCD) image Other forms of image acquisition devices such as acquisition devices, such as front-facing cameras, etc.
  • CMOS Complementary Metal Oxide Semiconductor
  • CCD charge-coupled Device
  • FIG. 6 is a schematic flowchart of a molding method of a display panel 1 according to an embodiment of the present application
  • FIGS. 7 to 11 are corresponding steps of the molding method of a display panel 1 according to an embodiment of the present application.
  • an embodiment of the present application also provides a method for forming a display panel 1, including:
  • each particle unit 224 is at least partially disposed in the same layer as the first electrode 221, and surrounds the periphery of one of the first electrodes 221, and the particle unit 224 includes an adhesive layer 224a As well as the particles 224b distributed in the adhesive layer 224a, the orthographic projection of at least part of each of the at least part of the particles 224b on the substrate 10 does not overlap the orthographic projection of the first electrode 221 on the substrate 10 .
  • the molding method of the display panel 1 provided by the embodiment of the present application can be used to mold the display panel 1 provided by the above-mentioned embodiments, because it includes molding a plurality of particle units 224 distributed in an array in the first area AA1, and each particle unit 224
  • the particle unit 224 includes a glue layer 224a and particles 224b distributed in the glue layer 224a, and at least part of the particles 224b each of the particles At least part of the orthographic projection on the substrate 10 does not overlap with the orthographic projection of the first electrode 221 on the substrate 10, so that the formed display panel 1 has particles 224b in the corresponding first area AA1, and ambient light occurs at the particles Diffraction, refraction or reflection, thereby changing the path of the external light, destroying the diffraction phenomenon caused by the periodic arrangement of the first electrodes, thereby reducing the diffraction, so that when the display panel 1 corresponds to the first area AA1 integrated with a camera and other devices, the diffracted light can be reduced.
  • the provided substrate 10 may be the array substrate 10 mentioned in the display panel 1 in the above-mentioned embodiment, which may be manufactured in advance, and of course may also be before step S100 Prefabricated on site, no specific restrictions are made.
  • the patterned first metal layer further includes third electrodes 211 distributed in the second area AA2 of the display panel 1 .
  • step S200 may include:
  • the colloid layer is patterned to form a plurality of particle units 224 distributed in an array.
  • an etching process may be used to pattern the colloidal layer to ensure the array distribution requirements of the plurality of array-distributed particle units 224 .
  • the formed light-emitting structure layer further includes a second light-emitting module 212 located on the third electrode 211 .

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Abstract

本申请涉及一种显示面板、显示装置及显示面板的成型方法，显示面板具有第一区域，显示面板包括：基板；发光器件层，层叠设置于基板，发光器件层包括阵列分布于第一区域的第一发光器件，第一发光器件包括第一电极、至少部分与第一电极同层设置并包围第一电极外周的粒子单元、位于第一电极上的第一发光模块以及位于第一发光模块上的第二电极；其中，粒子单元包括胶层以及分布于胶层内的粒子，至少部分粒子中的每个粒子的至少部分在基板上的正投影与第一电极在基板上的正投影不交叠。本申请提供的显示面板能够满足全面屏显示需求，同时能够降低衍射现象对前置摄像头等器件成像效果的影响。

Description

显示面板、显示装置及显示面板的成型方法
相关申请的交叉引用
本申请要求享有于2021年03月31日提交的名称为“显示面板、显示装置及显示面板的成型方法”的中国专利申请第202110352510.5号和2021年06月01日提交的名称为“显示面板、显示装置及显示面板的成型方法”的中国专利申请第202110609216.8号的优先权，上述申请的全部内容通过引用并入本文中。
技术领域
本申请涉及显示技术领域，特别是涉及一种显示面板、显示装置及显示面板的成型方法。
背景技术
随着电子设备的快速发展，用户对屏占比的要求越来越高，使得电子设备的全面屏显示受到业界越来越多的关注。
电子设备如手机、平板电脑等，由于集成诸如前置摄像头等感光器件，需要增加相应区域的光线透过率，为此，越来越多的厂商对显示面板与前置摄像头等器件对应的区域的结构进行改进，在一定程度上虽然能够满足前置摄像头等器件的感光需求，但同时存在衍射现象，影响前置摄像头的成像效果。
因此，亟需一种新的显示面板、显示装置及显示面板的成型方法。
发明内容
本申请实施例提供一种显示面板、显示装置及显示面板的成型方法，显示面板能够满足全面屏显示需求，同时能够降低衍射现象对前置摄像头等器件成像效果的影响。
第一方面，根据本申请实施例提出了一种显示面板，显示面板具有第 一区域，显示面板包括：基板；发光器件层，层叠设置于基板，发光器件层包括阵列分布于第一区域的第一发光器件，第一发光器件包括第一电极、至少部分与第一电极同层设置并包围第一电极外周的粒子单元、位于第一电极上的第一发光模块以及位于第一发光模块上的第二电极；其中，粒子单元包括胶层以及分布于胶层内的粒子，至少部分粒子中的每个所述粒子的至少部分在基板上的正投影与第一电极在基板上的正投影不交叠。
第二方面，根据本申请实施例提出了一种显示装置，包括上述显示面板。
第三方面，根据本申请实施例提出了一种显示面板的成型方法，包括：在基板上成型图案化的第一金属层，图案化的第一金属层包括分布于基板第一区域的第一电极；在第一区域成型多个阵列分布的粒子单元，每个粒子单元至少部分与第一电极同层，并包围其中一个第一电极外周，粒子单元包括胶层以及分布于胶层内的粒子，至少部分粒子中的每个所述粒子的至少部分在基板上的正投影与第一电极在基板上的正投影不交叠；在第一金属层上成型发光结构层，发光结构层包括位于第一电极的第一发光模块；在发光结构层背离第一金属层的一侧成型第二金属层，以形成显示面板。
根据本申请实施例提供的显示面板、显示装置及显示面板的成型方法，显示面板包括基板以及发光器件层，发光器件层包括设置于第一区域的第一发光器件，第一发光器件包括第一电极、第一发光模块以及第二电极，以用于满足显示面板的全面屏显示要求。由于第一发光器件还包括粒子单元，粒子单元至少部分与第一电极同层设置并包围第一电极外周，并且粒子单元包括胶层以及分布于胶层内的粒子，至少部分粒子中的每个所述粒子的至少部分在基板上的正投影与第一电极在基板上的正投影不交叠，通过外界光在无序粒子处的衍射、折射或者反射作用，破坏第一电极周期性排列造成的衍射现象，从而降低衍射，使得当显示面板对应第一区域集成有摄像头等器件时，能够减少衍射现象对摄像头等器件成像效果的影响，保证成像效果。
附图说明
下面将参考附图来描述本申请示例性实施例的特征、优点和技术效果。
图1是根据本申请实施例的显示面板的俯视示意图；
图2是图1中Q处的局部放大图；
图3是图2中沿M-M方向的剖视图；
图4是根据本申请实施例的显示装置的结构示意图；
图5是图4中沿N-N方向的剖视图；
图6是根据本申请实施例的显示面板的成型方法的流程示意图；
图7至图11是根据本申请实施例的显示面板的成型方法各步骤对应的结构示意图。
具体实施方式
下面将详细描述本申请的各个方面的特征和示例性实施例，为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及具体实施例，对本申请进行进一步详细描述。应理解，此处所描述的具体实施例仅被配置为解释本申请，并不被配置为限定本申请。对于本领域技术人员来说，本申请可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本申请的示例来提供对本申请更好的理解。
全面屏显示面板是未来的发展趋势，但全面屏显示面板的要求与前置摄像头的设计成为了该技术上的主要矛盾点。这也就要求全面屏显示面板的光学特性可以支持屏下摄像功能，这对于显示面板光学特性的要求非常高。
对于屏下摄像头UDC(Under Display Camera)技术而言，拍照区域应该具有高质量成像的特性，同时也需要尽可能达到正常的显示效果。从光学原理上说，显示区域的图案和膜层结构将会对光有强烈的衍射作用，这与屏下高质量成像的需求有冲突，如何在UDC拍照区设计出低衍射的屏体，是现阶段研究的一个主要热点问题。
为了解决上述技术问题，本申请实施例提供一种显示面板、显示装置及显示面板的成型方法，显示面板能够满足全面显示需求，同时能够降低衍射现象对前置摄像头等器件成像效果的影响。为了更好地理解本申请，下面结合图1至图11根据本申请实施例的显示面板、显示装置及显示面板的成型方法进行详细描述。
如图1至图3所示，本申请一个实施例的显示面板的俯视示意图，图2是图1中Q处的局部放大图，图3是图2中沿M-M方向的剖视图。
本申请实施例提供的显示面板1，包括基板10以及发光器件层20，发光器件层20层叠设置于基板10上。显示面板1具有第一区域AA1与第二区域AA2，第二区域AA2包围至少部分第一区域AA1。发光器件层20包括阵列分布于第一区域AA1的第一发光器件22与阵列分布于第二区域AA2的第二发光器件21。第一发光器件22包括第一电极221、至少部分与第一电极221同层设置并包围第一电极221外周的粒子单元224、位于第一电极221上的第一发光模块222以及位于第一发光模块222上的第二电极223。第二发光器件21包括第三电极211、位于第三电极211上的第二发光模块212以及位于第二发光模块212上的第四电极213。其中，粒子单元224包括胶层224a以及分布于胶层224a内的粒子224b，至少部分粒子224b中的每个所述粒子的至少部分在基板10上的正投影与第一电极221在基板10上的正投影不交叠，也就是说，至少部分粒子224b中的所述粒子在基板10上的正投影与第一电极221在基板10上的正投影可以完全不交叠，和/或，至少部分粒子224b中的所述粒子在基板10上的正投影与第一电极221在基板10上的正投影可以部分交叠。可选地，至少部分粒子224b在基板10上的正投影与第一电极221在基板10上的正投影错开设置(即完全不交叠)。
本申请实施例提供的显示面板1，发光器件层20包括设置于第一区域AA1的第一发光器件22，第一发光器件22包括第一电极221、第一发光模块222以及第二电极223，其中，第一电极221可以为阳极，第二电极223可以为阴极，通过第一区域AA1的第一发光器件22，能够满足显示面板1的全面屏显示要求。同时由于第一发光器件22还包括粒子单元224， 粒子单元224至少部分与第一电极221同层设置并包围第一电极221外周，并且粒子单元224包括胶层224a以及分布于胶层224a内的粒子224b，至少部分粒子224b中的每个所述粒子的至少部分在基板10上的正投影与第一电极221在基板10上的正投影不交叠，粒子224b随机分布在第一电极221附近，外界光在无序粒子处发生衍射、折射或者反射，进而改变外界光的路径，破坏第一电极周期性排列造成的衍射现象，从而降低衍射，使得当显示面板1对应第一区域AA1集成有摄像头等器件时，能够减少衍射光线对摄像头等器件成像效果的影响，保证成像效果。
本申请实施例提供的显示面板1，其基板10可以为阵列基板10，包括衬底11、阵列分布于衬底11上的薄膜晶体管12以及覆盖各薄膜晶体管12设置的平坦化层13，发光器件层20可以层叠设置于基板10的平坦化层13上。通过基板10上设置的薄膜晶体管12能够驱动对应的第二发光器件21以及第一发光器件22，保证显示面板的显示需求。
可选地，第二区域AA2可以完全包围第一区域AA1设置，当然也可以包围第一区域AA1的一部分。
作为一种可选地实施方式，第二发光器件21以及第一发光器件22均可以为有机发光器件。
本申请实施例提供的显示面板1，发光器件层20还包括像素限定层23，像素限定层23设置于基板10上，可选地，像素限定层23位于平坦化层13上。相邻第三电极211之间、相邻第一电极221之间以及相邻第一电极221与第三电极211之间通过所述像素限定层23分隔，像素限定层23具有像素开口，第一电极221以及第三电极211分别显露于对应的像素开口，第一发光模块222以及第二发光模块212设置于像素限定层23对应的像素开口。可选地，在显示面板1的第一区域AA1，像素限定层23还覆盖粒子单元224设置。
可选地，第一发光器件22在显示面板1的第一区域AA1以第一密度阵列分布，第二发光器件21在显示面板1的第二区域AA2以第二密度阵列分布，第一密度等于第二密度。通过上述设置，利于发光器件层20的成型，同时能够优化显示面板1的显示效果。
本申请实施例提供的显示面板1，每个第一发光器件22所包括的粒子单元224的粒子224b的数量为一个以上，至少两个第一发光器件22各自所包括的粒子单元的一个以上粒子224b在基板10上的正投影分布图案彼此不同。通过上述设置，能够使得各第一发光器件22对应设置的粒子单元224的结构具有随机性，通过外界光在无序粒子处的衍射、反射或者折射作用，破坏第一电极周期性排列造成的衍射现象，从而降低衍射。
示例性地，可以使得显示面板1的其中一个第一发光器件22所包括的粒子单元224中的粒子224b为五个，五个粒子224b在基板10上的投影连线呈五边形，另外一个第一发光器件22所包括的粒子单元224中的粒子224b为六个，六个粒子224b在基板10上的投影连线呈六边形。在有些实施例中，也可以使得显示面板1的多个第一发光器件22各自所包括的粒子单元224的一个以上粒子224b在基板10上的正投影分布图案彼此不同，或者说不同，使得各第一发光器件22对应设置的粒子单元224的结构具有随机性，通过外界光在无序粒子处的衍射、反射或者折射作用，进而改外界光的路径，破坏第一电极周期性排列造成的衍射现象，从而降低衍射。
在一些可选地实施例中，本申请实施例提供的显示面板1，至少两个第一发光器件22各自所包括的粒子224b的数量差值大于0。通过上述设置，进一步保证外界透过显示面板1的光线相位的无序化，降低衍射，使得在显示面板1对应第一区域AA1集成前置摄像头等器件时，降低衍射，保证成像效果。
作为一种可选地实施方式，发光器件层20所包括的粒子224b的数量与发光器件层20所包括的第一发光器件22的数量的比值大于或等于50。通过上述设置，能够使得粒子224b在第一区域AA1的分布具有足够的随机性，有效的保证外界透过显示面板1的光线相位的无序化，有效地降低光线透过显示面板1对应第一区域AA1位置时引起的衍射问题。
作为一种可选地实施方式，本申请实施例提供的显示面板1，每个第一发光器件22的粒子单元224在基板10上的正投影凸出于粒子单元224所包围的第一电极221在基板10上的正投影，例如，粒子单元224在基板 10上的正投影凸出于粒子单元224所包围的第一电极221在基板10上的正投影的尺寸范围为1μm～5μm之间的任意数值，包括1μm、5μm两个端值，可选为2μm、3μm或者4μm。通过上述设置，在保证光线由相邻两个第一电极221之间透过的前提下，能够保证粒子224b的分布面积，降低衍射，保证在显示面板1对应第一区域AA1集成摄像头等器件时的成像效果。
需要说明的是，本申请实施例提及的每个第一发光器件22的粒子单元224在基板10上的正投影凸出于粒子单元224所包围的第一电极221在基板10上的正投影是指：每个第一发光器件22的粒子单元224包围第一电极221的四周设置，粒子单元224在基板10上的正投影围绕第一电极221在基板10的正投影，并且粒子单元224在基板10上的正投影沿基板10的延展方向向远离第一电极221的方向延伸，以凸出于粒子单元224所包围的第一电极221在基板10上的正投影，使得粒子单元224至少部分位于相邻两个第一电极221之间的区域。
作为一种可选地实施方式，本申请实施例提供的显示面板1，粒子224b可以为高折射率透光粒子。其中，所述高折射率透光粒子由高折射率材料组成，具体的，所述高折射率材料的折射率大于1.8，进一步的，所述高折射率材料的折射率为1.8-2.4。外界光在无序粒子处发生衍射或者折射，具体的，外界光在粒子的边缘发生衍射，在粒子表面发生折射，利用粒子改变外界光线的路径，破坏第一电极周期性排列造成的衍射现象，降低衍射。
在一些可选地实施例中，本申请实施例提供的显示面板1，粒子224b包括氧化锆粒子等。当然，在有些实施例中，粒子也可以采用其他高折射率透光粒子，只要能够通过在第一电极周边形成随机分布的粒子，通过粒子的衍射或折射破坏第一电极规则性排列造成的衍射现象，降低衍射均可。
作为一种可选地实施方式，本申请实施例提供的显示面板1，粒子224b可以为不透光粒子。通过外界光线在无序粒子处的衍射或者反射作用，具体的，外界光在粒子的边缘发生衍射，在粒子表面上发生反射，破 坏第一电极周期性排列造成的衍射现象，从而降低衍射。
在一些可选地实施例中，本申请实施例提供的显示面板1，粒子224b包括金属粒子，例如铝粒子等。当然，在有些实施例中，粒子也可以采用非金属粒子，例如碳粒子，只要能够在第一电极周边形成随机分布的粒子，通过粒子处外界光的衍射或者反射作用破坏第一电极规则性排列造成的衍射现象，降低衍射均可。
作为一种可选地实施方式，本申请实施例提供的显示面板1，粒子224b的直径尺寸的取值范围为0.1um～1um之间的任意数值，具体的，所述粒子224b的直径尺寸的取值范围还可以为0.3um～1um之间的任意数值，包括0.3um、1um两个端值，可选为0.4um、0.6um、0.8um等。粒子224b采用上述取值范围，既能够保证对照射至粒子224b上的光线的路径的改变，且能够避免粒子224b尺寸过大导致将大部分光线阻挡而影响成像效果。
作为一种可选地实施方式，本申请实施例提供的显示面板1，其中，各第一发光器件22所包括的粒子单元224内的粒子224b的数量、大小可以不同。
在一些可选地实施例中，本申请实施例提供的显示面板1，当粒子单元224为非导电结构层时，多个第一发光器件22的粒子单元224可以同层设置并相互连接，当然，此为一种可选地实施方式，在有些实施例中，也可以使得相邻两个第一发光器件22的粒子单元224彼此间隔设置。通过上述设置，无论粒子224b采用的是否为导电粒子，均能够有效的避免因设置粒子单元224而导致的各第一电极221彼此电连接，保证显示效果。
一些可选地实施例中，可以使得粒子单元224至少部分覆盖第一电极221背离衬底的表面，利于粒子单元224对第一电极221的包绕，降低衍射概率。
可选地，本申请实施例提供的显示面板1，显示面板1的第三电极211以及第一电极221可以同层设置且彼此独立且间隔设置，可选地，第三电极211以及第一电极221均为阳极。可选地，显示面板1的第四电极213以及第二电极223可以同层设置，第四电极213以及第二电极223均 为阴极，可选地，第四电极213以及第二电极223可以为一体式结构且整层设置。
作为一种可选地实施方式，本申请实施例提供的显示面板1，显示面板1的第一区域AA1可以为第一显示区，显示面板1的第二区域AA2可以为第二显示区，第一显示区以及第二显示区共同显示画面实现显示面板1的全面屏显示需求。
如图4以及图5所示，图4是本申请一个实施例的显示装置的结构示意图，图5是图4中沿N-N方向的剖视图。另一方面，本申请实施例还提供一种显示装置，包括上述任一实施例的显示面板1。显示面板1包括相对的第一表面S1和第二表面S2，其中第一表面S1为显示面。显示装置还包括感光组件2，该感光组件2位于显示面板11的第二表面S2所在侧，感光组件2与第一区域AA1的位置相对应。
感光组件可以是图像采集装置，用于采集外部图像信息。本实施例中，感光组件可以为互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)图像采集装置，在其它一些实施例中，感光组件也可以是电荷耦合器件(Charge-coupled Device，CCD)图像采集装置等其它形式的图像采集装置，如前置摄像头等。
如图6至图11所示，图6是本申请一个实施例的显示面板1的成型方法的流程示意图，图7至图11是本申请一个实施例的显示面板1的成型方法各步骤对应的结构示意图。又一方面，本申请实施例还提供一种显示面板1的成型方法，包括：
S100、在基板10上成型图案化的第一金属层，图案化的第一金属层包括分布于显示面板1的第一区域AA1的第一电极221。
S200、在第一区域AA1成型多个阵列分布的粒子单元224，每个粒子单元224至少部分与第一电极221同层设置，并包围其中一个第一电极221外周，粒子单元224包括胶层224a以及分布于胶层224a内的粒子224b，至少部分粒子224b中的每个所述粒子的至少部分在基板10上的正投影与第一电极221在基板10上的正投影不交叠。
S300、在第一金属层上成型发光结构层，发光结构层包括位于第一电 极221的第一发光模块222。
S400、在发光结构层背离第一金属层的一侧成型第二金属层，以形成显示面板1，第二金属层包括位于第一发光模块222上的第二电极223。
本申请实施例提供的显示面板1的成型方法，能够用于成型上述各实施例提供的显示面板1，由于其包括在第一区域AA1成型多个阵列分布的粒子单元224，每个粒子单元224至少部分与第一电极221同层设置并包围其中一个第一电极221外周设置，粒子单元224包括胶层224a以及分布于胶层224a内的粒子224b，至少部分粒子224b中的每个所述粒子的至少部分在基板10上的正投影与第一电极221在基板10上的正投影不交叠，使得成型后的显示面板1在对应第一区域AA1中具有粒子224b，外界光在粒子处发生衍射、折射或者反射，进而改变外界光的路径，破坏第一电极周期性排列造成的衍射现象，从而降低衍射，使得当显示面板1对应第一区域AA1集成有摄像头等器件时，能够减少衍射光线对摄像头等器件成像效果的影响，保证成像效果。
作为一种可选地实施方式，在步骤S100中，提供的基板10可以为上述实施例中显示面板1中提及的阵列基板10，可以是提前制成的，当然也可以是在步骤S100之前现场预制的，不做具体限定。
可选地，在步骤S100中，图案化的第一金属层还包括分布于所述显示面板1的第二区域AA2的第三电极211。
在一些可选地实施例中，步骤S200可以包括：
在第一区域AA1涂敷混合有粒子224b的胶液并固化形成胶体层；
图案化胶体层，以形成多个阵列分布的粒子单元224。
可选地，图案化胶体层，以形成多个阵列分布的粒子单元224的步骤可以采用刻蚀工艺对胶体层进行图案化，以保证多个阵列分布的粒子单元224的阵列分布要求。
在一些可选地实施例中，在步骤S300中，形成的发光结构层还包括位于第三电极211的第二发光模块212。
虽然已经参考优选实施例对本申请进行了描述，但在不脱离本申请的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部 件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本申请并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (20)

  1. 一种显示面板，其具有第一区域，所述显示面板包括：
    基板；
    发光器件层，层叠设置于所述基板，所述发光器件层包括阵列分布于所述第一区域的第一发光器件，所述第一发光器件包括第一电极、至少部分与所述第一电极同层设置并包围所述第一电极外周的粒子单元、位于所述第一电极上的第一发光模块以及位于所述第一发光模块上的第二电极；
    其中，所述粒子单元包括胶层以及分布于所述胶层内的粒子，至少部分所述粒子中的每个所述粒子的至少部分在所述基板上的正投影与所述第一电极在所述基板上的正投影不交叠。
  2. 根据权利要求1所述的显示面板，其中，至少部分所述粒子在所述基板上的正投影与所述第一电极在所述基板上的正投影错开设置。
  3. 根据权利要求1所述的显示面板，其中，每个所述第一发光器件所包括的所述粒子单元的所述粒子的数量为一个以上，至少两个所述第一发光器件各自所包括的所述粒子单元的一个以上所述粒子在所述基板上的正投影分布图案彼此不同。
  4. 根据权利要求1所述的显示面板，其中，至少两个所述第一发光器件所包括的所述粒子的数量差值大于0。
  5. 根据权利要求1或4所述的显示面板，其中，所述发光器件层所包括的所述粒子的数量与所述第一发光器件的数量的比值大于或等于50。
  6. 根据权利要求1所述的显示面板，其中，每个所述第一发光器件的所述粒子单元在所述基板上的正投影凸出于所述粒子单元所包围的所述第一电极在所述基板上的正投影。
  7. 根据权利要求6所述的显示面板，其中，所述粒子单元在所述基板上的正投影凸出于所述粒子单元所包围的所述第一电极在所述基板上的正投影的尺寸范围为1μm～5μm。
  8. 根据权利要求1所述的显示面板，其中，所述粒子为高折射率透光粒子。
  9. 根据权利要求8所述的显示面板，其中，所述高折射率透光粒子包括氧化锆粒子。
  10. 根据权利要求1所述的显示面板，其中，所述粒子为不透光粒子。
  11. 根据权利要求1所述的显示面板，其中，所述粒子包括金属粒子。
  12. 根据权利要求1所述的显示面板，其中，所述粒子包括碳粒子。
  13. 根据权利要求1所述的显示面板，其中，所述粒子的直径的尺寸的取值范围为0.1um～1um。
  14. 根据权利要求1所述的显示面板，其中，相邻两个所述第一发光器件的所述粒子单元彼此间隔设置。
  15. 根据权利要求1所述的显示面板，其中，所述显示面板还具有第二区域，所述第二区域包围至少部分所述第一区域，所述发光器件还包括阵列分布于所述第二区域的第二发光器件，所述第二发光器件包括第三电极、位于所述第三电极上的第二发光模块以及位于所述第二发光模块上的第四电极。
  16. 根据权利要求15所述的显示面板，其中，所述第一发光器件在所述第一区域以第一密度阵列分布，所述第二发光器件在所述第二区域以第二密度阵列分布。
  17. 根据权利要求16所述的显示面板，其中，所述第一密度等于所述第二密度。
  18. 一种显示装置，包括如权利要求1至17任意一项所述的显示面板。
  19. 一种显示面板的成型方法，所述显示面板具有第一区域，包括如下步骤：
    S100、在基板上成型图案化的第一金属层，图案化的所述第一金属层包括分布于所述第一区域的第一电极；
    S200、在所述第一区域成型多个阵列分布的粒子单元，每个所述粒子 单元至少部分与所述第一电极同层设置，并包围其中一个所述第一电极外周，所述粒子单元包括胶层以及分布于所述胶层内的粒子，至少部分所述粒子中的每个所述粒子的至少部分在所述基板上的正投影与所述第一电极在所述基板上的正投影不交叠；
    S300、在所述第一金属层上成型发光结构层，所述发光结构层包括位于所述第一电极上的第一发光模块；
    S400、在所述发光结构层背离所述第一金属层的一侧成型第二金属层，以形成所述显示面板。
  20. 根据权利要求19所述的显示面板的成型方法，其中，所述步骤S200包括：
    在所述第一区域涂敷混合有所述粒子的胶液并固化形成胶体层；
    图案化所述胶体层，以形成多个阵列分布的所述粒子单元。
PCT/CN2021/138333 2021-03-31 2021-12-15 显示面板、显示装置及显示面板的成型方法 WO2022206033A1 (zh)

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