WO2022202767A1 - Ｇａ２Ｏ３系単結晶基板と、Ｇａ２Ｏ３系単結晶基板の製造方法 - Google Patents

Ｇａ２Ｏ３系単結晶基板と、Ｇａ２Ｏ３系単結晶基板の製造方法 Download PDF

Info

Publication number
WO2022202767A1
WO2022202767A1 PCT/JP2022/013015 JP2022013015W WO2022202767A1 WO 2022202767 A1 WO2022202767 A1 WO 2022202767A1 JP 2022013015 W JP2022013015 W JP 2022013015W WO 2022202767 A1 WO2022202767 A1 WO 2022202767A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crystal
substrate
plane
based single
Prior art date
Application number
PCT/JP2022/013015
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
健吾 西口
敏郎 古滝
Original Assignee
アダマンド並木精密宝石株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アダマンド並木精密宝石株式会社 filed Critical アダマンド並木精密宝石株式会社
Publication of WO2022202767A1 publication Critical patent/WO2022202767A1/ja

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Definitions

  • the present invention relates to a Ga 2 O 3 -based single crystal substrate and a method for producing a Ga 2 O 3 -based single crystal substrate.
  • twin crystals are present in the substrate, cracks, cracks, or peeling may occur in the laminated film grown on that portion, or the desired plane orientation may occur. Since a laminated film with a different plane orientation grows, it cannot be used as a device. Therefore, a twin crystal-free single crystal substrate containing no twin crystals at all is required.
  • the present invention has been made in view of the above problems, and provides a Ga 2 O 3 system single crystal and a Ga 2 O 3 system single crystal substrate which are completely twin -free and have good crystallinity.
  • the object is to enable the production of optical devices and power devices using O3 - based single crystal substrates with a high yield.
  • a Ga 2 O 3 -based single crystal substrate having a total concentration of impurities contained in the single crystal of 0.02 mol % or more and 0.15 mol % or less and having no twins.
  • the above principal plane is within 7° (including 0°
  • a substrate processed from a Ga 2 O 3 -based single crystal grown by an induction heating single crystal growth method, containing impurity concentration of 0.02 mol % or more and 0.15 mol % or less, and completely twinning Ga A method for producing a 2 O 3 -based single crystal substrate.
  • the direction in which the Ga 2 O 3 single crystal is grown is the a-axis direction, the b-axis direction, the c-axis direction, or is inclined within 7° (but not including 0°) from each axis.
  • a Ga 2 O 3 -based single crystal substrate having no twin crystals and good crystallinity can be produced.
  • FIG. 1 is a schematic cross-sectional view illustrating a growth furnace as an example of a method for producing a Ga 2 O 3 -based single crystal by an EFG method according to the present invention
  • FIG. 1 It is explanatory drawing of the manufacturing method of the Ga2O3 system single crystal by the EFG method of FIG.
  • (a) A perspective view showing an example of a Ga 2 O 3 -based single crystal substrate according to an embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view illustrating a growth furnace as an example of a method for producing a Ga 2 O 3 -based single crystal by an EFG method according to the present invention
  • FIG. 1 A perspective view showing an example of a Ga 2 O 3 -based single crystal substrate according to an embodiment of the present invention.
  • (b) A plan view showing an example of a Ga 2 O 3 -based single crystal substrate according to
  • 2 is a perspective view showing another example of a Ga 2 O 3 -based single crystal substrate according to an embodiment of the present invention
  • 1 is a graph showing Si impurity concentrations [mol %] in Ga 2 O 3 -based single crystals according to Example 1 of the present invention and Comparative Example 1, and the presence or absence of twin crystals or the presence or absence of grain boundaries.
  • 5 is a graph showing the Si impurity concentration [mol %] in Ga 2 O 3 -based single crystals according to Example 2 of the present invention and Comparative Example 2, and the presence or absence of twin crystals or the presence or absence of grain boundaries.
  • the Ga 2 O 3 -based single crystal 13 is a Ga 2 O 3 single crystal or a Ga 2 O 3 crystal containing Al. When it contains Al, it is a crystal having a composition ratio of (Al (1-x) Ga x ) 2 O 3 (0 ⁇ X ⁇ 1).
  • FIG. 1 is a schematic cross-sectional view showing the structure of a ⁇ -Ga 2 O 3 single crystal manufacturing apparatus 1 using the EFG method.
  • the crystal growth method is not limited to the EFG method, and may be the CZ (Czochralski) method, the Bridgman method, or the like.
  • a crucible 3 filled with Ga 2 O 3 -based single crystal raw material and a die 5 provided with a slit are installed in the crucible 3 inside the manufacturing apparatus 1 .
  • the upper surface of the crucible 13 has a lid 6 except for the upper surface of the die 5 .
  • the raw material to be filled in the crucible 13 is high-purity Ga 2 O 3 (gallium oxide) with a purity of 5N (99.999%) or higher. Then, in order to prevent the occurrence of twin crystals during crystal growth while maintaining good crystallinity, impurities are added so that the total content in the single crystal is 0.02 mol % or more and 0.15 mol % or less. . At the same time, this also means that the Ga 2 O 3 -based single crystal substrate has desired semiconductor physical properties (eg, electrical resistivity, carrier type, carrier density, mobility, etc.). Furthermore, the addition of impurities makes it difficult for polycrystals to occur during crystal growth and improves the crystallinity, thereby improving the yield of single crystals.
  • Ga 2 O 3 gallium oxide
  • Impurity elements include Si, Sn, C, N, P, Fe, Mg, Cu, Co, and Ni. When mixed with the gallium oxide starting material, these elements are used alone or in the form of oxides or nitrides. .
  • the raw material to be filled in the crucible 13 is preferably a high-density raw material so that it can be filled as much as possible.
  • the crucible 13, the die 5, the lid 6, etc. which are heated in the growth apparatus to a high temperature of about 1800° C. or higher, which is the melting point of ⁇ -Ga 2 O 3 , and are exposed to the melt or vapor of ⁇ -Ga 2 O 3 , a material that does not easily react with Ga 2 O 3 melt or vapor and has a high melting point of about 1800° C. or higher.
  • the growth atmosphere must be an inert atmosphere containing 100 vol % of an inert gas such as argon or nitrogen, or an inert atmosphere containing up to about 3 vol % of oxygen.
  • the crucible 3 may be pressurized to suppress evaporation of raw materials.
  • the crucible 3 is induction-heated to a predetermined temperature by a heater section 9 consisting of an induction coil, the raw material in the crucible 3 is melted, and the melt rises through the slit 5A due to capillary action.
  • a heating method there is resistance heating that is generally used in CZ crystal growth of Si, but in the case of Ga 2 O 3 system crystal growth, induction heating is more suitable.
  • Ga 2 O 3 is very easy to sublimate and evaporate, so in the case of crystal growth by resistance heating, which inevitably raises the temperature of the entire hot zone, sublimation and decomposition from seed crystals and grown crystals As evaporation occurs, those crystals become thin and thin, and in the worst case, disappear. As a result, the yield of crystal growth is lowered, or crystal growth itself becomes impossible.
  • the seed crystal 10 is lowered above the slit 5A to partially contact the die upper surface 5B where the melt is exposed. After that, by pulling up the seed crystal 10 at a predetermined speed, crystallization is started from the melt contact portion of the seed crystal.
  • the seed crystal 10 is pulled up while adjusting the pulling speed at as high a temperature as possible to form a thin neck portion (necking 13a) to remove dislocations in the crystal.
  • neck thickness is set to about half or less of the seed crystal area in contact with the upper surface of the die, thereby reducing the dislocation density of the Ga 2 O 3 system single crystal 13 to 1.0 ⁇ 10 5 . Number of pieces/cm 2 or less can be achieved.
  • the seed crystal preferably has as few dislocations as possible.
  • the rising speed of the seed crystal holder 11 is set to a predetermined speed, and crystal growth is performed so that the Ga 2 O 3 system single crystal 13 is expanded at a constant angle ⁇ in the width direction of the die 5 with the seed crystal 10 as the center.
  • Crystal growth 13b Twin crystals of gallium oxide single crystals occur during necking, spreading, and growth of a straight body portion, which will be described later, and occur frequently in the spreading stage in particular. Then, the twin crystal grows and extends along the direction parallel to the (100) plane in the crystal, and does not disappear until it hits the edge of the crystal.
  • the rate of twinning depends on the magnitude of ⁇ .
  • ⁇ In order to prevent the occurrence of twin crystals, it is preferable to reduce ⁇ and spread slowly. As ⁇ is increased, the atoms in the melt are arranged more rapidly and crystallized, so that more twin crystals, which are disorder of the arrangement of atoms, occur. Specifically, when the angle is set to 30° or less, twin crystals disappear and a single crystal with high crystallinity can be grown. When ⁇ becomes larger than 30°, twinning occurs.
  • the impurity concentration in the single crystal is 0.02 mol% or more, twin crystals do not occur regardless of the magnitude of ⁇ . Twin crystals occur when the impurity concentration is lower than 0.02 mol %. When the impurity concentration is higher than 0.15 mol %, although twin crystals do not occur, grain boundaries occur and the crystallinity deteriorates. Therefore, the impurity concentration is preferably 0.15 mol % or less.
  • the portion (straight body portion 13c) having the same width as the full width of the die 5 is then pulled up to an appropriate length.
  • the length of the straight body is not particularly limited.
  • the temperature is lowered to room temperature, the crystal is taken out from the manufacturing equipment, and the presence or absence of twins and the crystallinity are evaluated using a strain tester and an X-ray diffraction device. If the impurity concentration in the single crystal is within the above-specified range, no twins exist at all. Also, there is no grain boundary at all. Note that the above evaluation may be performed after processing the extracted crystal into a substrate.
  • a twin-free seed crystal having the same width as the full width of the die 5 is used in crystal growth of the Ga 2 O 3 -based single crystal 13, and the above-mentioned necking is prevented.
  • twinning does not occur at all, and a twin-free single crystal with excellent crystallinity can be grown.
  • the pulling plane orientation can be set in various ways according to the plane orientation of the main surface.
  • the lifting direction is the a-axis, b-axis, c-axis, or any direction inclined within ⁇ 7° (but not including 0°) with respect to each axis.
  • the direction of pulling referred to here is the direction of crystal growth.
  • the (100) plane, (010) plane, and (001) plane are suitable for forming a semiconductor layer with good surface morphology and suitable for fabricating a semiconductor device structure such as an ultraviolet LED. , (101), (-201), or (100), (010), (001), (101), (-201) within 7° Any surface inclined by (but not including 0°) is preferred.
  • the pulling direction of the Ga 2 O 3 -based single crystal 13 and the setting direction of the seed crystal 10 are usually set so that the plane orientation of the surface 20 of the Ga 2 O 3 -based single crystal 13 is as described above.
  • a method for processing the grown Ga 2 O 3 -based single crystal 13 into a Ga 2 O 3 -based single crystal substrate 16 will be described.
  • a slicing machine, a diamond core drill, an ultrasonic processing machine, or the like is used to cut out a rectangular or circular shape to cut out a rectangular or circular substrate of a predetermined shape.
  • the edge grinder is used to fine-tune the outer shape of the substrate.
  • orientation flats may be formed on the substrate 16 or 21 as necessary.
  • the main surface of the above orientation flat is the (100) plane or a surface inclined in the range of 7° or less from the (100) plane
  • at least one of the orientation flats is an end face that is perpendicular to the main surface and parallel to the b axis. is.
  • the main surface is other than the (100) plane or a plane inclined by 7° or less from the (100) plane
  • at least one of the orientation flats is perpendicular to the main surface and is between the main surface and the (100). It is an end face parallel to the line of intersection.
  • one side of the manufactured substrate 16 is used as the main surface 15, and at least the main surface 15 is subjected to polishing such as lapping and polishing to make the main surface 15 ultra-flat and to adjust the thickness of the substrate 16 at the same time. Further, the rear surface 19 is also polished as required.
  • Alumina is preferable for lapping abrasive grains.
  • Chemical mechanical polishing (CMP) is used for polishing, and colloidal silica is preferred for CMP abrasive grains.
  • the surface roughness Ra of the main surface 15 is 3.0 nm or less, and the surface roughness Ra of the back surface 19 is 0.1 nm or more as necessary.
  • cleaning with hydrofluoric acid after organic cleaning with acetone etc. is performed in order to remove dirt such as silica adhering to the substrate, adjust residual processing distortion and form a clean oxide layer on the substrate surface.
  • the substrate cleaning of RCA cleaning is carried out.
  • the purpose is to remove residual thermal strain, residual processing strain, coloration, which is common for those skilled in the field of single crystal substrate processing such as Si, InP, and sapphire, and to improve electrical characteristics.
  • a heat treatment for the purpose may be applied as appropriate.
  • the atmosphere gas for the heat treatment may be nitrogen, carbon dioxide, argon, oxygen, or air, excluding a reducing gas such as hydrogen gas, and may be appropriately combined.
  • the treatment temperature is 500-1600°C, preferably 700-1400°C. Also, it may be pressurized.
  • the shape of the substrate in the plane direction is rectangular, circular, or rectangular or circular with an orientation flat surface.
  • the rigidity in order to be able to precisely control the shape, at the same time, it is possible to secure the rigidity as a self-supporting substrate, have the strength to the extent that it does not cause any inconvenience in handling, and furthermore, it is possible to prevent the occurrence of cracks and burrs.
  • the long side of the rectangular shape is preferably 15 mm or more and 150 mm or less
  • the circular shape preferably has a diameter of ⁇ 25 mm or more and ⁇ 160 mm or less.
  • the substrate thickness is preferably 0.1 mm or more and 2.0 mm or less.
  • the dislocation density of the substrate 16 cut from the single crystal grown by the necking and spreading of the EFG method and processed into a substrate is 1.0 ⁇ 10 5 /cm 2 or less.
  • the above dislocation density can be replaced by, for example, the dot-like etch pit density when the substrate is etched, and is evaluated by etching with a KOH etchant.
  • Ga 2 O 3 powder raw material of purity 6N mixed with Si impurities at concentrations as shown in Table 1 was sintered and pulverized for each of samples 1 to 4 of each example. Then, each raw material having a high density was put into a crucible for each crystal growth, and then each crystal was grown and polished in the same manner to prepare a substrate. SiO 2 , which is an oxide, was used as the Si impurity.
  • the gas atmosphere in the crystal growth furnace was set to nitrogen atmospheric pressure, and the iridium crucible was heated by induction heating.
  • the seed crystal is lowered, and the tip of the seed crystal is brought into contact with the die to melt.
  • the growth temperature was raised to 1850° C. or higher, the seed crystal pulling speed was started at 10 mm/hr or higher, and then the temperature speed was appropriately adjusted so that the neck thickness would be ⁇ 4 mm.
  • the pulling speed was set to 10 mm/hr, and the growing temperature was slowly lowered so that ⁇ was 50°, and the die width was 55 mm, and the die thickness was 10 mm.
  • the widest plane of the pulled single crystal is the main plane of the substrate, and this time, the seed crystal was set so that it would be the (-201) plane, and it was pulled up in the b-axis direction and grown.
  • Comparative example 1 Comparative samples 5 and 6 were produced in the same manner as in Example 1. However, the Si impurity concentration contained in the crystal mixed with the raw material was as shown in Table 2, unlike the example samples.
  • the original crystal cut out of each sample taken out after the crystal growth was completed was evaluated with a strain tester and an X-diffraction device, the original crystal cut out of sample 5 contained twin crystals. Although the original crystal of sample 6 contained no twins at all, grain boundaries were generated.
  • Example 1 The results of Example 1 and Comparative Example 1 are summarized in FIG. A single crystal and a substrate having excellent crystallinity without crystals and grain boundaries were obtained.
  • the gas atmosphere in the crystal growth furnace was set to nitrogen atmospheric pressure, and the iridium crucible was heated by induction heating.
  • the seed crystal is lowered, and the tip of the seed crystal is brought into contact with the die to melt.
  • a growth temperature 1800°C or higher and a seed crystal pulling speed of 50 mm/hr or less, and grow a straight body length of 55 mm while adjusting the temperature and speed appropriately so that the melt between the seed crystal and the die does not break. do.
  • Example 2 a substrate was processed from the grown single crystal in the same manner as in Example 1, and each example sample was evaluated with a strain tester and an X-diffraction device. A ⁇ 2-inch substrate with no grain boundary and excellent crystallinity was obtained.
  • Comparative example 2 Comparative samples 11 and 12 were produced in the same manner as in Example 2. However, unlike Example 2, the concentration of Si impurities contained in the crystal mixed at the time of the starting materials was as shown in Table 4.
  • Twin crystals were included in sample 11 obtained by substrate processing from the above crystal, and twin crystals were not included in sample 12 at all. However, grain boundaries were present only in sample 12, and the crystallinity was not good.
  • Example 2 The results of Example 2 and Comparative Example 2 are summarized as shown in FIG. Thus, the single crystal and the substrate having excellent crystallinity with no twin crystals and no grain boundaries can be obtained.
  • the crystal contains 0.02 to 0.15 mol % of Si, it is possible to grow a single crystal with excellent crystallinity without any twin crystals.
  • the substrate By processing the substrate, it is possible to produce a substrate with excellent crystallinity, which is completely free of twin crystals and free of grain boundaries.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/JP2022/013015 2021-03-24 2022-03-22 Ｇａ２Ｏ３系単結晶基板と、Ｇａ２Ｏ３系単結晶基板の製造方法 WO2022202767A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021049333A JP2022147882A (ja) 2021-03-24 2021-03-24 Ｇａ２Ｏ３系単結晶基板と、Ｇａ２Ｏ３系単結晶基板の製造方法
JP2021-049333 2021-03-24

Publications (1)

Publication Number Publication Date
WO2022202767A1 true WO2022202767A1 (ja) 2022-09-29

Family

ID=83397414

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/013015 WO2022202767A1 (ja) 2021-03-24 2022-03-22 Ｇａ２Ｏ３系単結晶基板と、Ｇａ２Ｏ３系単結晶基板の製造方法

Country Status (3)

Country Link
JP (2) JP2022147882A (zh)
TW (1) TW202302935A (zh)
WO (1) WO2022202767A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014201480A (ja) * 2013-04-04 2014-10-27 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の成長方法
JP2016013931A (ja) * 2014-06-30 2016-01-28 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶基板
JP2016013962A (ja) * 2015-05-08 2016-01-28 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP5879102B2 (ja) * 2011-11-15 2016-03-08 株式会社タムラ製作所 β−Ｇａ２Ｏ３単結晶の製造方法
JP2018501184A (ja) * 2015-01-09 2018-01-18 フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン 金属るつぼ内に含まれる金属からベータ相の酸化ガリウム（β−Ｇａ２Ｏ３）単結晶を成長させる方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786179B2 (ja) * 2010-03-12 2015-09-30 並木精密宝石株式会社 酸化ガリウム単結晶及びその製造方法
JP2013237591A (ja) * 2012-05-16 2013-11-28 Namiki Precision Jewel Co Ltd 酸化ガリウム融液、酸化ガリウム単結晶、酸化ガリウム基板、および酸化ガリウム単結晶の製造方法
JP5865440B2 (ja) * 2014-06-30 2016-02-17 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5879102B2 (ja) * 2011-11-15 2016-03-08 株式会社タムラ製作所 β−Ｇａ２Ｏ３単結晶の製造方法
JP2014201480A (ja) * 2013-04-04 2014-10-27 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の成長方法
JP2016013931A (ja) * 2014-06-30 2016-01-28 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶基板
JP2018501184A (ja) * 2015-01-09 2018-01-18 フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン 金属るつぼ内に含まれる金属からベータ相の酸化ガリウム（β−Ｇａ２Ｏ３）単結晶を成長させる方法
JP2016013962A (ja) * 2015-05-08 2016-01-28 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KURAMATA AKITO, KOSHI KIMIYOSHI, WATANABE SHINYA, YAMAOKA YU, MASUI TAKEKAZU, YAMAKOSHI SHIGENOBU: "High-quality β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 55, no. 12, 1 December 2016 (2016-12-01), JP , pages 1202A2, XP055971340, ISSN: 0021-4922, DOI: 10.7567/JJAP.55.1202A2 *

Also Published As

Publication number Publication date
JP2023021233A (ja) 2023-02-10
JP2022147882A (ja) 2022-10-06
TW202302935A (zh) 2023-01-16

Similar Documents

Publication Publication Date Title
JP6584428B2 (ja) 炭化珪素単結晶の製造方法及び炭化珪素単結晶基板
JP6237848B2 (ja) エピタキシャル炭化珪素ウエハ用炭化珪素単結晶基板の製造方法及びエピタキシャル炭化珪素ウエハ用炭化珪素単結晶基板
CN107208311B (zh) 碳化硅单晶块的制造方法和碳化硅单晶块
CN101565185B (zh) 多晶硅棒的制造方法
WO2011037079A1 (ja) 炭化珪素インゴット、炭化珪素基板、それらの製造方法、坩堝、および半導体基板
TWI628319B (zh) β-Ga 2 O 3 Method for cultivating single crystals, and β-Ga 2 O 3 Single crystal substrate and its manufacturing method (1)
TWI609105B (zh) β-Ga 2 O 3 Single crystal growth method, and β-Ga 2 O 3 Monocrystalline substrate and its manufacturing method (2)
JP2022552024A (ja) ＳｃＡｌＭｇＯ４基板に基づく窒化ガリウム単結晶及びその製造方法
JP4830973B2 (ja) 炭化珪素単結晶の製造方法
KR20040097261A (ko) 스피넬 기판 및 당해 기판 상에서의 ⅲ-ⅴ 물질의헤테로에피택셜 성장
JP2023533326A (ja) 高品質の炭化ケイ素種結晶、炭化ケイ素結晶、炭化ケイ素基板およびそれらの製造方法
TWI580827B (zh) Sapphire single crystal nucleus and its manufacturing method
US6143267A (en) Single crystal SiC and a method of producing the same
WO2022202767A1 (ja) Ｇａ２Ｏ３系単結晶基板と、Ｇａ２Ｏ３系単結晶基板の製造方法
JP5135545B2 (ja) 炭化珪素単結晶インゴット育成用種結晶及びその製造方法
JPH0797299A (ja) ＳｉＣ単結晶の成長方法
JP5145488B2 (ja) サファイア単結晶基板及びその製造方法
WO2022202747A1 (ja) Ｇａ２Ｏ３系単結晶基板並びにＧａ２Ｏ３系単結晶基板の製造方法
JP3560180B2 (ja) ＺｎＳｅホモエピタキシャル単結晶膜の製造法
CN117187949A (zh) 一种低位错密度AlN单晶的生长方法
JPH01242499A (ja) ＺｎＳｅ単結晶の転位減少法
CN114561701A (zh) 一种铸造法生长氧化镓单晶的方法及包含氧化镓单晶的半导体器件
JP2005154234A (ja) 結晶育成用棒および二ホウ化物単結晶の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22775551

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22775551

Country of ref document: EP

Kind code of ref document: A1