WO2022199433A1

WO2022199433A1 - Light-emitting unit and light-emitting module

Info

Publication number: WO2022199433A1
Application number: PCT/CN2022/081058
Authority: WO
Inventors: 刁鸿浩
Original assignee: 北京芯海视界三维科技有限公司; 视觉技术创投私人有限公司
Priority date: 2021-03-23
Filing date: 2022-03-16
Publication date: 2022-09-29
Also published as: TW202245295A; CN112701201A; CN112701201B

Abstract

The present application relates to the technical field of semiconductors. Disclosed is a light-emitting unit, comprising: a light-emitting semiconductor, comprising a first semiconductor layer, an active layer, a second semiconductor layer, and a sunken structure sunken from the second semiconductor layer to the first semiconductor layer, which are sequentially arranged in a stacked manner; and an insulating layer, comprising a first insulating portion and a second insulating portion, the first insulating portion being arranged on a top surface of the second semiconductor layer, and the second insulating portion being arranged on a surface of the sunken structure. Further provided are a first hole structure penetrating the insulating layers and a second hole structure penetrating the insulating layers; a first electrode arranged in the first hole structure; and a second electrode arranged in the second hole structure. At least one of the following conditions is met: the first electrode is at least arranged on a top surface of the second insulating portion; and the second electrode is at least arranged on a top surface of the first insulating portion. The light-emitting unit provided in the present application can prevent conduction of the light emitted by the light-emitting unit in an undesired direction. The present application further discloses a light-emitting module.

Description

Light-emitting unit and light-emitting module

This application claims the priority of the Chinese patent application with the application number 202110304698.6 and the invention titled "Light-emitting unit and light-emitting module", which was filed with the China Intellectual Property Office on March 23, 2021, the entire contents of which are incorporated by reference into this application .

technical field

The present application relates to the field of semiconductor technology, such as light-emitting units and light-emitting modules.

Background technique

The light-emitting unit can efficiently convert electrical energy into light energy, so it has a wide range of uses in modern society, for example, the light-emitting unit is used to realize lighting, display functions, and the like.

In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in the related art:

A part of the light emitted by the light emitting unit will be conducted in an undesired direction, and the light conducted in the undesired direction will affect the display effect.

SUMMARY OF THE INVENTION

In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended to be an extensive review, nor to identify key/critical elements or delineate the scope of protection of these embodiments, but rather serves as a prelude to the detailed description that follows.

Embodiments of the present disclosure provide a light-emitting unit and a light-emitting module to solve the technical problem that part of the light emitted by the light-emitting unit is conducted in an undesired direction, and the light conducted in the undesired direction will affect the display effect.

In some embodiments, the light-emitting unit provided by the embodiments of the present disclosure includes:

A light-emitting semiconductor, comprising a first semiconductor layer, an active layer, a second semiconductor layer and a recessed structure recessed from the second semiconductor layer to the first semiconductor layer;

The insulating layer includes a first insulating portion and a second insulating portion, the first insulating portion is arranged on the top surface of the second semiconductor layer, and the second insulating portion is arranged on the surface of the sunken structure; wherein, the light-emitting unit is provided with a penetration through the insulating layer to reach a first hole structure in the first semiconductor layer, and a second hole structure through the insulating layer to the second semiconductor layer;

a first electrode, the first electrode is arranged in the first hole structure; the second electrode, the second electrode is arranged in the second hole structure;

Also meet at least one of the following conditions:

the first electrode is disposed at least on the top surface of the second insulating part;

The second electrode is disposed at least on the top surface of the first insulating portion.

In some embodiments, the sunken structure includes a slope;

The first insulating portion is arranged on the top surface of the second semiconductor layer, and the second insulating portion is arranged on the inclined surface.

In some embodiments, when the first electrode is disposed at least on the top surface of the second insulating portion, the first hole structure is a hole passing through the insulating layer; the first electrode includes a first ohmic contact layer and a first contact electrode, the first The ohmic contact layer is arranged on the bottom surface of the first hole structure, and the first contact electrode is arranged at least on the first ohmic contact layer in the first hole structure and the top surface of the second insulating part.

In some embodiments, when the first electrode is disposed at least on the top surface of the second insulating portion, the first hole structure includes a first portion and a second portion penetrating the insulating layer, and the first portion is close to the light emitting semiconductor; wherein the cross section of the first portion The length is different from the cross-sectional length of the second portion; the first electrode includes a first ohmic contact layer and a first contact electrode, the first ohmic contact layer is arranged in the first portion, the first contact electrode is arranged at least in the second portion, and the first ohmic contact layer is arranged in the first portion. The top surface of the two insulating parts.

In some embodiments, the second hole structure is a hole passing through the insulating layer; the second electrode includes a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is disposed on the bottom surface of the second hole structure, at least part of the second The contact electrode is disposed on the second ohmic contact layer in the second hole structure.

In some embodiments, the second hole structure includes a third portion and a fourth portion penetrating the insulating layer, the third portion is located at least in part or all of the top surface of the second semiconductor layer, and the fourth portion is located away from the third portion One side of the second semiconductor layer; the second electrode includes a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is arranged in the third part, and at least part of the second contact electrode is arranged in the fourth part.

In some embodiments, the third portion is also located on part or all of the side surface of the second semiconductor layer.

In some embodiments, the first electrode is further disposed on a partial area of the top surface of the first insulating portion.

In some embodiments, the projection of the portion of the first electrode disposed on the first insulating portion on the plane of the top surface of the second semiconductor layer and the projection of the second ohmic contact layer on the plane of the top surface of the second semiconductor layer Connect or overlap.

In some embodiments, when the second electrode is disposed at least on the top surface of the first insulating portion, the second hole structure is a hole passing through the insulating layer; the second electrode includes a second ohmic contact layer and a second contact electrode, the second The ohmic contact layer is arranged on the bottom surface of the second hole structure, and the second contact electrode is arranged at least on the second ohmic contact layer in the second hole structure and on the top surface of the first insulating part.

In some embodiments, when the second electrode is disposed on at least a top surface of the first insulating portion, the second hole structure includes a third portion and a fourth portion penetrating the insulating layer, and the third portion is located at least on top of the second semiconductor layer Part or all of the area of the surface, the fourth part is located on the side of the third part away from the second semiconductor layer; the second electrode includes a second ohmic contact layer and a second contact electrode, and the second ohmic contact layer is arranged in the third part , the second contact electrode is arranged at least in the fourth part, and is arranged on the top surface of the first insulating part.

In some embodiments, the second electrode is further disposed on a partial area of the top surface of the second insulating portion.

In some embodiments, the first hole structure is a hole passing through the insulating layer; the first electrode includes a first ohmic contact layer and a first contact electrode, the first ohmic contact layer is disposed on the bottom surface of the first hole structure, at least part of the first ohmic contact layer The contact electrode is disposed on the first ohmic contact layer in the first hole structure.

In some embodiments, the first hole structure includes a first portion and a second portion penetrating the insulating layer, and the first portion is close to the light-emitting semiconductor; wherein the cross-sectional length of the first portion and the cross-sectional length of the second portion are different; and the first electrode includes a first portion. An ohmic contact layer and a first contact electrode, the first ohmic contact layer is provided in the first part, and at least part of the first contact electrode is provided in the second part.

In some embodiments, the projection of the portion of the second electrode on the second insulating portion on the inclined plane is connected to or overlaps with the projection of the first ohmic contact layer on the inclined plane.

In some embodiments, the material of the first insulating portion is the same or different from the material of the second insulating portion.

In some embodiments, the top surface of the first electrode is provided with a metal layer or a non-metal layer.

In some embodiments, the light-emitting module provided by the embodiments of the present disclosure includes: a light-emitting unit layer, and the light-emitting unit layer includes a plurality of the above-mentioned light-emitting units.

In some embodiments, the plurality of light emitting units include:

At least one of a light emitting diode (LED), a mini light emitting diode (Mini LED), and a micro light emitting diode (Micro LED).

The light-emitting unit and light-emitting module provided by the embodiments of the present disclosure can achieve the following technical effects:

By disposing the first electrode at least on the top surface of the second insulating part; or by disposing the second electrode at least on the top surface of the first insulating part; or by disposing the first electrode at least on the top surface of the second insulating part, The second electrode is disposed at least on the top surface of the first insulating portion, so as to prevent the light emitted by the light emitting unit from being conducted in an undesired direction, which is beneficial to improve the display effect.

The foregoing general description and the following description are exemplary and explanatory only and are not intended to limit the application.

Description of drawings

At least one embodiment is exemplified by the accompanying drawings, which are not intended to limit the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. does not constitute a proportional limit, and where:

FIG. 1 is a schematic structural diagram of a light-emitting unit provided by an embodiment of the present disclosure;

FIG. 2 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

3 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

FIG. 4 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

FIG. 5 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

6 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

FIG. 7 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

FIG. 8 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

FIG. 9 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

10 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

11 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

12 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

13 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure;

14 is a schematic structural diagram of a light-emitting semiconductor provided by an embodiment of the present disclosure;

15 is a schematic structural diagram of another light-emitting semiconductor provided by an embodiment of the present disclosure;

FIG. 16 is a partial structural schematic diagram of a light-emitting unit provided by an embodiment of the present disclosure;

FIG. 17 is a schematic structural diagram of a light emitting module provided by an embodiment of the present disclosure.

Reference number:

100: light emitting unit; 101: first insulating part; 102: second insulating part; 104: second semiconductor layer; 105: active layer; 106: first semiconductor layer; 107: first ohmic contact layer; a contact electrode; 109: the second ohmic contact layer; 110: the second contact electrode; 111: the first electrode; 112: the second electrode; 115: the top surface of the second semiconductor layer; 119: the side surface of the second semiconductor layer; 120: the top surface of the second insulating part; L1: the cross-sectional length of the first part; L2: the cross-sectional length of the second part; 121: the non-metallic layer; 122: the top surface of the first insulating part; 200: the light-emitting unit layer; 300 : Lighting module.

Detailed ways

In order to understand the features and technical contents of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings, which are for reference only and are not intended to limit the embodiments of the present disclosure. In the following technical description, for the convenience of explanation, numerous details are provided to provide a thorough understanding of the disclosed embodiments. However, at least one embodiment may be practiced without these details. In other instances, well-known structures and devices may be shown simplified in order to simplify the drawings.

1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and 13, in some embodiments, the present disclosure The embodiment provides a light-emitting unit 100, comprising: a light-emitting semiconductor, including a first semiconductor layer 106, an active layer 105, a second semiconductor layer 104, and a first semiconductor layer 104 that is sunk from the second semiconductor layer 104 to the first semiconductor layer. 106 sunken structure;

The insulating layer includes a first insulating portion 101 and a second insulating portion 102, the first insulating portion 101 is arranged on the top surface 115 of the second semiconductor layer, and the second insulating portion 102 is arranged on the surface of the sunken structure; wherein, in the light-emitting unit 100 a first hole structure that penetrates the insulating layer to reach the first semiconductor layer 106, and a second hole structure that penetrates the insulating layer to the second semiconductor layer 104;

The first electrode 111, the first electrode 111 is arranged in the first hole structure; the second electrode 112, the second electrode 112 is arranged in the second hole structure;

Also meet at least one of the following conditions:

The first electrode 111 is disposed at least on the top surface 120 of the second insulating portion;

The second electrode 112 is disposed at least on the top surface 122 of the first insulating portion.

In some embodiments, the recessed structures may be of different shapes. Optionally, as shown in FIG. 1, FIG. 2, FIG. 3, FIG. 4, FIG. 5, FIG. 6, FIG. 7, FIG. 8, FIG. 9, FIG. 10, FIG. 11, FIG. 12 and FIG. 13, the sunken structure may be When the sunken structure has an inclined shape, the sunken structure may have an inclined surface, or the sunken structure may have a curved surface. Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12 and Fig. 13 are only exemplary to show that the depressed structure has a sloped surface Case. Optionally, as shown in FIG. 14 , the sunken structure may also be in the shape of a step.

In some embodiments, as shown in FIG. 15 , the top surface 115 of the second semiconductor layer is the side of the second semiconductor layer 104 away from the active layer 105 , and the position on the second semiconductor layer 104 is shown in FIG. 15 . Optionally, the side surface 119 of the second semiconductor layer is the surface of the second semiconductor layer 104 close to the second insulating portion 102 , and the position on the second semiconductor layer 104 is shown in FIG. 15 . Optionally, the side surface 119 of the second semiconductor layer is part of the sunken structure. Optionally, when the recessed structure has a slope, the side surface 119 of the second semiconductor layer is a part of the slope.

In some embodiments, as shown in FIG. 16 , the top surface 122 of the first insulating portion is the side of the first insulating portion 101 away from the light-emitting semiconductor, and the position on the first insulating portion 101 is shown in FIG. 16 .

In some embodiments, as shown in FIG. 16 , the top surface 120 of the second insulating part is the surface of the second insulating part 102 away from the light-emitting semiconductor, and the position in the second insulating part 102 is shown in FIG. 16 .

In some embodiments, as shown in FIG. 1 , FIG. 2 , FIG. 3 , FIG. 4 , FIG. 5 , FIG. 6 and FIG. 7 , the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion. Optionally, as shown in FIG. 8 , FIG. 9 , FIG. 10 , FIG. 11 , FIG. 12 and FIG. 13 , the second electrode 112 is disposed at least on the top surface 122 of the first insulating portion. Optionally, the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion, and the second electrode 112 is disposed at least on the top surface 122 of the first insulating portion.

By disposing the first electrode 111 at least on the top surface 120 of the second insulating part; or by disposing the second electrode 112 at least on the top surface 122 of the first insulating part; or by disposing the first electrode 111 at least on the second insulating part The second electrode 112 is disposed at least on the top surface 122 of the first insulating part to prevent the light emitted by the light emitting unit 100 from being conducted in an undesired direction, which is beneficial to improve the display effect.

1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and 13, in some embodiments, the sunken structure It includes an inclined surface; the first insulating portion 101 is disposed on the top surface 115 of the second semiconductor layer, and the second insulating portion 102 is disposed on the inclined surface.

In some embodiments, as shown in FIGS. 1 and 2 , when the first electrode 111 is disposed on at least the top surface 120 of the second insulating portion, the first hole structure may have two structures. Optionally, the first hole structure may be a through hole structure as shown in FIG. 1 . Optionally, the first hole structure may be the structure shown in FIG. 2 . In FIG. 2 , the first hole structure is not a through hole structure, and the first hole structure has two parts with different cross-sectional lengths.

In some embodiments, as shown in FIG. 1 , when the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion, the first hole structure is a hole passing through the insulating layer; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108, the first ohmic contact layer 107 is arranged on the bottom surface of the first hole structure, the first contact electrode 108 is arranged at least on the first ohmic contact layer 107 in the first hole structure, and the second insulating top surface 120 of the part.

In some embodiments, an intersection of the end of the first hole structure close to the light-emitting semiconductor and the surface of the first semiconductor layer 106 is used as a boundary, and the surface of the first semiconductor layer 106 located within the intersection is the bottom surface of the first hole structure . Optionally, the opening of the first hole structure is disposed opposite to the bottom surface of the first hole structure.

In some embodiments, as shown in FIG. 2 , when the first electrode 111 is disposed at least on the top surface 120 of the second insulating part, the first hole structure includes a first part and a second part penetrating the insulating layer, and the first part is close to the light emitting part Semiconductor; wherein, the cross-sectional length L1 of the first part and the cross-sectional length L2 of the second part are different; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108, and the first ohmic contact layer 107 is arranged in the first part, The first contact electrode 108 is disposed at least in the second portion, and the top surface 120 of the second insulating portion.

In some embodiments, as shown in FIG. 2 , the cross-sectional length L1 of the first portion is greater than the cross-sectional length L2 of the second portion. Optionally, one end of the first part is not in contact with the active layer 105 , and the other end of the first part may extend to the end of the light emitting unit 100 .

In some embodiments, as shown in FIG. 1 , FIG. 2 , FIG. 3 , FIG. 4 and FIG. 5 , when the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion, the second hole structure may have two types structure. Optionally, the second hole structure may be a through hole structure as shown in FIG. 1 and FIG. 2 . Optionally, the second hole structure may be the structure shown in FIG. 3 , FIG. 4 and FIG. 5 . In FIG. 3 , FIG. 4 and FIG. 5 , the second hole structure is not a through hole structure, and the second hole structure has two The two parts have different cross-sectional lengths.

In some embodiments, the first pore structure and the second pore structure may be selected independently of each other. Optionally, the first hole structure may be a through hole, and the second hole structure may be a through hole. Alternatively, the first pore structure may comprise two parts and the second pore structure may comprise two parts. Alternatively, the first hole structure may include two parts, and the second hole structure may be a through hole. Alternatively, the first hole structure may be a through hole, and the second hole structure may include two parts.

In some embodiments, as shown in FIG. 1 and FIG. 2 , the second hole structure is a hole passing through the insulating layer; the second electrode 112 includes a second ohmic contact layer 109 and a second contact electrode 110 , and the second ohmic contact layer 109 Disposed on the bottom surface of the second hole structure, at least part of the second contact electrode 110 is disposed on the second ohmic contact layer 109 in the second hole structure.

In some embodiments, an intersection of the end of the second hole structure close to the light-emitting semiconductor and the surface of the second semiconductor layer 104 is used as a boundary, and the surface of the second semiconductor layer 104 located in the intersection is the bottom surface of the second hole structure . Optionally, the opening of the second hole structure is disposed opposite to the bottom surface of the second hole structure.

In some embodiments, as shown in FIGS. 3 , 4 and 5 , the second hole structure includes a third portion and a fourth portion penetrating the insulating layer, and the third portion is located at least at a portion of the top surface 115 of the second semiconductor layer. or the whole area, the fourth part is located on the side of the third part away from the second semiconductor layer 104; the second electrode 112 includes a second ohmic contact layer 109 and a second contact electrode 110, and the second ohmic contact layer 109 is disposed on the third part part, at least part of the second contact electrode 110 is provided in the fourth part.

In some embodiments, FIG. 3 shows a situation where the third portion is located in a partial region of the top surface 115 of the second semiconductor layer.

In some embodiments, FIG. 4 shows a situation where the third portion is located in the entire area of the top surface 115 of the second semiconductor layer.

In some embodiments, as shown in FIG. 5 , the third portion is also located in part or all of the side surface 119 of the second semiconductor layer.

In some embodiments, as shown in FIG. 6 , the first electrode 111 is further disposed on a partial area of the top surface 122 of the first insulating portion. As shown in FIG. 16 , optionally, the top surface 122 of the first insulating portion is the surface of the first insulating portion 101 away from the second semiconductor layer 104 . Optionally, the projection of the portion of the first electrode 111 disposed on the first insulating portion 101 on the plane where the top surface 115 of the second semiconductor layer is located and the location of the second ohmic contact layer 109 on the top surface 115 of the second semiconductor layer. Projections of planes join or overlap.

In the present application, through the cooperation between the second ohmic contact layer 109 in the third part and the first electrode 111 , the light emitted from the light emitting unit 100 toward the backlight direction can be completely blocked.

In some embodiments, as shown in FIG. 8 , FIG. 9 , FIG. 10 , FIG. 11 , FIG. 12 and FIG. 13 , when the second electrode 112 is disposed on at least the top surface 122 of the first insulating portion, the second hole structure may Has two structures. Optionally, the second hole structure may be a through hole structure as shown in FIG. 8 , FIG. 9 and FIG. 10 . Optionally, the second hole structure may be the structure shown in FIG. 11 , FIG. 12 and FIG. 13 . In FIGS. 11 , 12 and 13 , the second hole structure is not a through hole structure, and the second hole structure has two The two parts have different cross-sectional lengths.

In some embodiments, as shown in FIG. 8 , FIG. 9 and FIG. 10 , when the second electrode 112 is disposed at least on the top surface 122 of the first insulating portion, the second hole structure is a hole passing through the insulating layer; the second electrode 112 includes a second ohmic contact layer 109 and a second contact electrode 110, the second ohmic contact layer 109 is arranged on the bottom surface of the second hole structure, and the second contact electrode 110 is arranged at least on the second ohmic contact layer 109 in the second hole structure on the top surface 122 of the first insulating portion.

In some embodiments, as shown in FIGS. 11 , 12 and 13 , when the second electrode 112 is disposed on at least the top surface 122 of the first insulating portion, the second hole structure includes a third portion penetrating the insulating layer and a first Four parts, the third part is located at least in part or all of the top surface 115 of the second semiconductor layer, and the fourth part is located on the side of the third part away from the second semiconductor layer 104; the second electrode 112 includes a second ohmic contact layer 109 and the second contact electrode 110, the second ohmic contact layer 109 is provided in the third part, the second contact electrode 110 is provided in at least the fourth part, and is provided on the top surface 122 of the first insulating part.

In some embodiments, FIG. 11 shows a situation where the third portion is located in a partial region of the top surface 115 of the second semiconductor layer.

In some embodiments, FIG. 12 shows a situation where the third portion is located in the entire area of the top surface 115 of the second semiconductor layer.

In some embodiments, as shown in FIG. 13 , the third portion is also located in part or all of the side surface 119 of the second semiconductor layer.

In some embodiments, as shown in FIG. 9 and FIG. 10 , the second electrode 112 is further disposed on a partial area of the top surface 120 of the second insulating part.

In some embodiments, as shown in FIGS. 8 and 10 , when the second electrode 112 is disposed on at least the top surface 122 of the first insulating portion, the first hole structure may have two structures. Optionally, the first hole structure may be a through hole structure as shown in FIG. 8 . Optionally, the first hole structure may be the structure shown in FIG. 10 . In FIG. 10 , the first hole structure is not a through hole structure, and the first hole structure has two parts with different cross-sectional lengths.

In some embodiments, as shown in FIG. 8 , the first hole structure is a hole passing through the insulating layer; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108 , and the first ohmic contact layer 107 is disposed on the first ohmic contact layer 107 . On the bottom surface of a hole structure, at least part of the first contact electrode 108 is disposed on the first ohmic contact layer 107 in the first hole structure.

In some embodiments, as shown in FIG. 10 , the first hole structure includes a first part and a second part penetrating the insulating layer, and the first part is close to the light emitting semiconductor; wherein the cross-sectional length L1 of the first part and the cross-sectional length L2 of the second part Different; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108, the first ohmic contact layer 107 is provided in the first part, and at least part of the first contact electrode 108 is provided in the second part.

In some embodiments, as shown in FIG. 10 , the cross-sectional length L1 of the first portion is greater than the cross-sectional length L2 of the second portion. Optionally, one end of the first part is not in contact with the active layer 105 , and the other end of the first part may extend to the end of the light emitting unit 100 .

In some embodiments, as shown in FIG. 10 , the projection of the portion of the second electrode 112 on the second insulating portion 102 on the inclined plane is connected or overlapped with the projection of the first ohmic contact layer 107 on the inclined plane.

In the present application, through the cooperation of the first ohmic contact layer 107 and the second electrode 112 in the first part, the light emitted from the light emitting unit 100 toward the backlight direction can be completely blocked.

In some embodiments, as shown in FIGS. 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 and 13 , the first The material of the insulating portion 101 is the same as or different from the material of the second insulating portion 102 . Alternatively, FIG. 9 and FIG. 10 show a case where the material of the first insulating portion 101 is the same as the material of the second insulating portion 102 . Optionally, FIGS. 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 11 , 12 and 13 illustrate the material of the first insulating part 101 and the second insulating The case where the material of the part 102 is different. Optionally, the material of the first insulating part 101 and the material of the second insulating part 102 may be independently selected from silicon nitride, silicon oxide or silicon oxynitride.

In some embodiments, as shown in FIG. 7 , the top surface of the first electrode 111 is provided with a metal layer or a non-metal layer 121 . Optionally, the top surface of the first electrode 111 is the surface of the first electrode 111 away from the light emitting semiconductor. FIG. 7 only exemplarily shows the situation where the non-metallic layer 121 is provided on the top surface of the first electrode 111 .

In some embodiments, the first semiconductor layer may be N-type gallium nitride; alternatively, the second semiconductor layer may be P-type gallium nitride. Alternatively, the active layer may be a multiple quantum well structure.

In some embodiments, the first ohmic contact layer may be Ni-Au (Ni-Au means that the first ohmic contact layer has two layers, from close to the first semiconductor layer to away from the first semiconductor layer, Ni layer and Au layer in sequence ), Ni-Ag (Ni-Ag indicates that the first ohmic contact layer has two layers, from close to the first semiconductor layer to far away from the first semiconductor layer, Ni layer and Ag layer in sequence), Cr-Al (Cr-Al indicates the first semiconductor layer An ohmic contact layer has two layers, from close to the first semiconductor layer to far away from the first semiconductor layer, Cr layer and Al layer in sequence), TiN or tungsten nitride.

In some embodiments, the second ohmic contact layer may be ITO-Ag (ITO-Ag means that the second ohmic contact layer has two layers, from close to the second semiconductor layer to far away from the second semiconductor layer, the order is the ITO layer and the Ag layer ), Ni-Ag (Ni-Ag means that the second ohmic contact layer has two layers, from close to the second semiconductor layer to far away from the second semiconductor layer, Ni layer and Ag layer in sequence), ITO-Ni-Ag (ITO-Ni -Ag indicates that the second ohmic contact layer has three layers, from close to the second semiconductor layer to far away from the second semiconductor layer, followed by the ITO layer, the Ni layer and the Ag layer), ITO-Cr-Al (ITO-Cr-Al indicates the first The two ohmic contact layer has three layers, from close to the second semiconductor layer to far away from the second semiconductor layer, the order is ITO layer, Cr layer and Al layer), Ni-Au (Ni-Au means that the second ohmic contact layer has two layers, From close to the second semiconductor layer to far away from the second semiconductor layer, the order is Ni layer and Au layer), TiN or tungsten nitride.

In some embodiments, the material of the first contact electrode may include one or at least two of Au, Pt, Ti, Ag, Al or Cu.

In some embodiments, the material of the second contact electrode may include one or at least two of Au, Pt, Ti, Ag, Al or Cu.

As shown in FIG. 17 , an embodiment of the present disclosure provides a light-emitting module 300 , including: a light-emitting unit layer 200 , and the light-emitting unit layer 200 includes a plurality of the above-mentioned light-emitting units 100 .

In some embodiments, the plurality of light emitting units 100 may include at least one of light emitting diodes LEDs, mini Mini LEDs, and micro Micro LEDs. Optionally, the plurality of light emitting units 100 may include at least one LED. Optionally, the plurality of light emitting units 100 may include at least one Mini LED. Optionally, the plurality of light emitting units 100 may include at least one Micro LED. Optionally, the plurality of light emitting units 100 may include at least one LED and at least one Mini LED. Optionally, the plurality of light emitting units 100 may include at least one LED, and at least one Micro LED. Optionally, the plurality of light emitting units 100 may include at least one Mini LED and at least one Micro LED. Optionally, the plurality of light emitting units 100 may include at least one LED, at least one Mini LED, and at least one Micro LED. Optionally, the plurality of light emitting units 100 may include other light emitting devices other than LEDs, Mini LEDs, and Micro LEDs.

In some embodiments, the device type of the light-emitting unit 100 may be determined according to actual conditions such as process requirements, for example, LED, Mini LED, Micro LED or other light-emitting devices.

In some embodiments, the plurality of light emitting units 100 are arranged in an array.

The foregoing description and drawings sufficiently illustrate the embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural, logical, electrical, process, and other changes. The examples represent only possible variations. Unless expressly required, individual components and functions are optional and the order of operations may vary. Portions and features of some embodiments may be included in or substituted for those of other embodiments. The scope of the disclosed embodiments includes the full scope of the claims, along with all available equivalents of the claims. When used in this application, although the terms "first," "second," etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without changing the meaning of the description, a first element could be termed a second element, and similarly, a second element could be termed a first element, so long as all occurrences of "the first element" were consistently renamed and all occurrences of "the first element" were named consistently The "second element" can be renamed consistently. The first element and the second element are both elements, but may not be the same element. Also, the terms used in this application are used to describe the embodiments only and not to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a" (a), "an" (an) and "the" (the) are intended to include the plural forms as well, unless the context clearly dictates otherwise. . Similarly, the term "and/or" as used in this application is meant to include any and all possible combinations of one or more of the associated listings. Additionally, when used in this application, the term "comprise" and its variations "comprises" and/or including and/or the like refer to stated features, integers, steps, operations, elements, and/or The presence of a component does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groupings of these. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in the process, method, or device that includes the element. Herein, each embodiment may focus on the differences from other embodiments, and the same and similar parts between the various embodiments may refer to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method sections disclosed in the embodiments, reference may be made to the descriptions of the method sections for relevant parts.

Those skilled in the art can realize that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software may depend on the specific application and design constraints of the technical solution. Skilled artisans may use different methods for implementing the described functionality for each particular application, but such implementations should not be considered beyond the scope of the disclosed embodiments. Those skilled in the art can clearly understand that, for the convenience and brevity of the description, for the working process of the above-described systems, devices and units, reference may be made to the corresponding processes in the foregoing method embodiments, which will not be repeated here.

In the embodiments disclosed herein, the disclosed methods and products (including but not limited to apparatuses, devices, etc.) may be implemented in other ways. For example, the apparatus embodiments described above are only illustrative. For example, the division of units may only be a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or may be Integration into another system, or some features can be ignored, or not implemented. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, indirect coupling or communication connection of devices or units, and may be in electrical, mechanical or other forms. Units described as separate components may or may not be physically separated, and components shown as units may or may not be physical units, that is, may be located in one place, or may be distributed over multiple network units. This embodiment may be implemented by selecting some or all of the units according to actual needs. In addition, each functional unit in the embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.

In the drawings, the width, length, thickness, etc. of structures such as elements or layers may be exaggerated for clarity and descriptiveness. When an element or layer or the like is referred to as being "disposed on" (or "mounted on," "laying on," "adhering to," "coating on," and the like) another element or layer "over" or "above" When referring to “on”, the element or layer and other structures may be directly “disposed on” “above” or “on” the above-mentioned another element or layer, or there may be intervening elements or layers between the above-mentioned another element or layer, etc. structure, even partially embedded in another element or layer as described above.

Claims

A light-emitting unit, comprising:

a light-emitting semiconductor, comprising a first semiconductor layer, an active layer, a second semiconductor layer and a sunken structure recessed from the second semiconductor layer to the first semiconductor layer;

an insulating layer, comprising a first insulating portion and a second insulating portion, the first insulating portion is arranged on the top surface of the second semiconductor layer, and the second insulating portion is arranged on the surface of the sunken structure; wherein, the The light-emitting unit is provided with a first hole structure penetrating the insulating layer to reach the first semiconductor layer, and a second hole structure penetrating the insulating layer and reaching the second semiconductor layer;

a first electrode, the first electrode is arranged in the first hole structure; a second electrode, the second electrode is arranged in the second hole structure;

Also meet at least one of the following conditions:

the first electrode is disposed at least on the top surface of the second insulating part;

The second electrode is disposed at least on the top surface of the first insulating portion.
The light-emitting unit of claim 1, wherein the sunken structure comprises a slope;

The first insulating portion is arranged on the top surface of the second semiconductor layer, and the second insulating portion is arranged on the inclined surface.
The light-emitting unit according to claim 1, wherein when the first electrode is disposed at least on the top surface of the second insulating portion, the first hole structure is a hole passing through the insulating layer; the first hole structure is a hole passing through the insulating layer; An electrode includes a first ohmic contact layer and a first contact electrode, the first ohmic contact layer is disposed on the bottom surface of the first hole structure, and the first contact electrode is disposed at least in all of the first hole structure. on the first ohmic contact layer and on the top surface of the second insulating portion.
The light emitting unit of claim 1, wherein, when the first electrode is disposed on at least a top surface of the second insulating portion, the first hole structure comprises a first portion and a second portion penetrating the insulating layer part, the first part is close to the light-emitting semiconductor; wherein the cross-sectional length of the first part and the cross-sectional length of the second part are different; the first electrode includes a first ohmic contact layer and a first contact electrode, and the first An ohmic contact layer is disposed in the first portion, the first contact electrode is disposed in at least the second portion, and a top surface of the second insulating portion.
The light-emitting unit according to claim 3 or 4, wherein the second hole structure is a hole passing through the insulating layer; the second electrode comprises a second ohmic contact layer and a second contact electrode, the second The ohmic contact layer is disposed on the bottom surface of the second hole structure, and at least part of the second contact electrode is disposed on the second ohmic contact layer in the second hole structure.
The light emitting unit of claim 3 or 4, wherein the second hole structure includes a third portion and a fourth portion penetrating the insulating layer, the third portion being located at least on top of the second semiconductor layer Part or all of the area of the surface, the fourth part is located on the side of the third part away from the second semiconductor layer; the second electrode includes a second ohmic contact layer and a second contact electrode, the first A two ohmic contact layer is provided in the third portion, and at least part of the second contact electrode is provided in the fourth portion.
The light emitting unit of claim 6, wherein the third portion is further located in part or all of a side surface of the second semiconductor layer.
The light emitting unit according to claim 6, wherein the first electrode is further disposed on a partial area of the top surface of the first insulating portion.
The light-emitting unit according to claim 8, wherein a projection of a portion of the first electrode disposed on the first insulating portion on a plane where a top surface of the second semiconductor layer is located is in contact with the second ohmic contact The layers are connected or overlapped by a projection of the plane on which the top surface of the second semiconductor layer is located.
The light-emitting unit according to claim 1, wherein, when the second electrode is disposed at least on the top surface of the first insulating portion, the second hole structure is a hole passing through the insulating layer; the first The second electrode includes a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is disposed on the bottom surface of the second hole structure, and the second contact electrode is disposed at least in all of the second hole structure. on the second ohmic contact layer and on the top surface of the first insulating part.
The light emitting unit of claim 1, wherein when the second electrode is disposed on at least a top surface of the first insulating part, the second hole structure comprises a third part and a second hole penetrating through the insulating layer four parts, the third part is located at least in part or all of the top surface of the second semiconductor layer, the fourth part is located on the side of the third part away from the second semiconductor layer; the The second electrode includes a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is provided in the third portion, the second contact electrode is provided at least in the fourth portion, and is provided in the top surface of the first insulating part.
The light emitting unit of claim 11, wherein the third portion is further located in part or all of a side surface of the second semiconductor layer.
The light-emitting unit according to claim 10 or 11, wherein the second electrode is further disposed on a partial area of the top surface of the second insulating portion.
The light emitting unit of claim 13, wherein the first hole structure is a hole passing through the insulating layer; the first electrode comprises a first ohmic contact layer and a first contact electrode, the first ohmic contact The layer is disposed on the bottom surface of the first hole structure, and at least part of the first contact electrode is disposed on the first ohmic contact layer in the first hole structure.
The light emitting unit of claim 13, wherein the first hole structure includes a first portion and a second portion penetrating the insulating layer, the first portion being adjacent to the light emitting semiconductor; wherein a cross section of the first portion The length is different from the cross-sectional length of the second part; the first electrode includes a first ohmic contact layer and a first contact electrode, the first ohmic contact layer is arranged in the first part, and at least part of the first contact electrode set in the second part.
The light-emitting unit according to claim 15, wherein the projection of the part of the second electrode on the second insulating part on the slope is connected to the projection of the first ohmic contact layer on the slope or overlapping.
The light emitting unit of claim 1, wherein a material of the first insulating portion is the same as or different from a material of the second insulating portion.
The light emitting unit according to claim 1, wherein a metal layer or a non-metal layer is provided on the top surface of the first electrode.
A light-emitting module, comprising: a light-emitting unit layer, wherein the light-emitting unit layer includes a plurality of light-emitting units according to any one of claims 1 to 18.
The light-emitting module according to claim 19, wherein the plurality of light-emitting units comprise:

At least one of light-emitting diode LED, mini light-emitting diode Mini LED, and micro light-emitting diode Micro LED.