CN112701201B - Light-emitting unit and light-emitting module - Google Patents

Light-emitting unit and light-emitting module Download PDF

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CN112701201B
CN112701201B CN202110304698.6A CN202110304698A CN112701201B CN 112701201 B CN112701201 B CN 112701201B CN 202110304698 A CN202110304698 A CN 202110304698A CN 112701201 B CN112701201 B CN 112701201B
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layer
electrode
light
insulating
top surface
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CN112701201A (en
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不公告发明人
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Beijing Ivisual 3D Technology Co Ltd
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Beijing Ivisual 3D Technology Co Ltd
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Priority to PCT/CN2022/081058 priority patent/WO2022199433A1/en
Priority to TW111110033A priority patent/TW202245295A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

Abstract

The application relates to the technical field of semiconductors, and discloses a light-emitting unit, includes: the light-emitting semiconductor comprises a first semiconductor layer, an active layer, a second semiconductor layer and a sunken structure sunken from the second semiconductor layer to the first semiconductor layer, wherein the first semiconductor layer, the active layer and the second semiconductor layer are sequentially stacked; the insulating layer comprises a first insulating part and a second insulating part, the first insulating part is arranged on the top surface of the second semiconductor layer, and the second insulating part is arranged on the surface of the sunken structure; the first hole structure penetrating through the insulating layer and the second hole structure penetrating through the insulating layer are further arranged; a first electrode disposed at the first pore structure; a second electrode disposed at the second pore structure; at least one of the following conditions is also satisfied: the first electrode is at least arranged on the top surface of the second insulating part; the second electrode is disposed on at least a top surface of the first insulating portion. The light-emitting unit provided by the application can avoid the conduction of light emitted by the light-emitting unit to an undesired direction. The application also discloses a light-emitting module.

Description

Light-emitting unit and light-emitting module
Technical Field
The present application relates to the field of semiconductor technology, and for example, to a light emitting unit and a light emitting module.
Background
The light emitting unit can efficiently convert electric energy into light energy, and thus has wide applications in modern society, such as lighting, display functions, and the like.
In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in the related art:
some of the light emitted by the light emitting unit may be conducted in an undesired direction, and the light conducted in the undesired direction may affect the display effect.
Disclosure of Invention
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview nor is intended to identify key/critical elements or to delineate the scope of such embodiments but rather as a prelude to the more detailed description that is presented later.
The embodiment of the disclosure provides a light-emitting unit and a light-emitting module, so as to solve the technical problem that part of light emitted by the light-emitting unit is conducted to an undesired direction, and the light conducted to the undesired direction influences the display effect.
In some embodiments, a light emitting unit includes:
the light-emitting semiconductor comprises a first semiconductor layer, an active layer, a second semiconductor layer and a sunken structure sunken from the second semiconductor layer to the first semiconductor layer, wherein the first semiconductor layer, the active layer and the second semiconductor layer are sequentially stacked;
an insulating layer including a first insulating portion and a second insulating portion, the first insulating portion being disposed on a top surface of the second semiconductor layer, the second insulating portion being disposed on a surface of the recessed structure; a first hole structure penetrating through the insulating layer and reaching the first semiconductor layer and a second hole structure penetrating through the insulating layer and reaching the second semiconductor layer are arranged in the light-emitting unit;
a first electrode disposed in the first pore structure; a second electrode disposed in the second pore structure;
at least one of the following conditions is also satisfied:
the first electrode is arranged at least on the top surface of the second insulating part;
the second electrode is disposed at least on a top surface of the first insulating portion.
In some embodiments, the undercut structure comprises a ramp;
the first insulating portion is disposed on a top surface of the second semiconductor layer, and the second insulating portion is disposed on the inclined surface.
In some embodiments, when the first electrode is disposed at least on the top surface of the second insulating portion, the first hole structure is a hole penetrating the insulating layer; the first electrode includes a first ohmic contact layer disposed on a bottom surface of the first hole structure, and a first contact electrode disposed at least on the first ohmic contact layer in the first hole structure and on a top surface of the second insulating portion.
In some embodiments, when the first electrode is disposed at least on the top surface of the second insulating portion, the first hole structure includes a first portion and a second portion penetrating the insulating layer, the first portion being adjacent to the light emitting semiconductor; wherein the first portion has a cross-sectional length that is different from the cross-sectional length of the second portion; the first electrode includes a first ohmic contact layer disposed in the first portion, and a first contact electrode disposed at least in the second portion and a top surface of the second insulating portion.
In some embodiments, the second hole structure is a hole through the insulating layer; the second electrode comprises a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is arranged on the bottom surface of the second hole structure, and at least part of the second contact electrode is arranged on the second ohmic contact layer in the second hole structure.
In some embodiments, the second hole structure comprises a third portion and a fourth portion penetrating through the insulating layer, the third portion being located at least in a part or all of a top surface of the second semiconductor layer, the fourth portion being located on a side of the third portion remote from the second semiconductor layer; the second electrode includes a second ohmic contact layer disposed in the third portion and a second contact electrode at least a portion of which is disposed in the fourth portion.
In some embodiments, the third portion is also located at a partial or entire region of a side surface of the second semiconductor layer.
In some embodiments, the first electrode is further disposed on a partial region of the top surface of the first insulating portion.
In some embodiments, a projection of a portion of the first electrode disposed on the first insulating portion on a plane of a top surface of the second semiconductor layer is connected to or overlaps a projection of the second ohmic contact layer on a plane of a top surface of the second semiconductor layer.
In some embodiments, when the second electrode is disposed at least on top of the first insulating layer, the second hole structure is a hole through the insulating layer; the second electrode comprises a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is arranged on the bottom surface of the second hole structure, and the second contact electrode is at least arranged on the second ohmic contact layer in the second hole structure and arranged on the top surface of the first insulating part.
In some embodiments, when the second electrode is disposed at least on the top surface of the first insulating layer, the second hole structure includes a third portion and a fourth portion penetrating through the insulating layer, the third portion is located at least in a part or all of the area of the top surface of the second semiconductor layer, and the fourth portion is located on a side of the third portion away from the second semiconductor layer; the second electrode includes a second ohmic contact layer disposed in the third portion and a second contact electrode disposed at least in the fourth portion and on a top surface of the first insulating portion.
In some embodiments, the third portion is also located at a partial or entire region of a side surface of the second semiconductor layer.
In some embodiments, the second electrode is further disposed on a partial region of the top surface of the second insulating portion.
In some embodiments, the first hole structure is a hole through the insulating layer; the first electrode comprises a first ohmic contact layer and a first contact electrode, the first ohmic contact layer is arranged on the bottom surface of the first hole structure, and at least part of the first contact electrode is arranged on the first ohmic contact layer in the first hole structure.
In some embodiments, the first hole structure comprises a first portion and a second portion through the insulating layer, the first portion being proximate to the light emitting semiconductor; wherein the first portion has a cross-sectional length that is different from the cross-sectional length of the second portion; the first electrode includes a first ohmic contact layer disposed in the first portion and a first contact electrode at least a portion of which is disposed in the second portion.
In some embodiments, a projection of a portion of the second electrode on the second insulating portion on the inclined plane is connected to or overlaps a projection of the first ohmic contact layer on the inclined plane.
In some embodiments, the material of the first insulating portion is the same as or different from the material of the second insulating portion.
In some embodiments, the top surface of the first electrode is provided with a metal layer or a non-metal layer.
In some embodiments, a light emitting module includes: a light emitting cell layer including a plurality of light emitting cells as described above.
In some embodiments, a plurality of the light emitting units includes:
at least one of a light emitting diode LED, a Mini light emitting diode LED and a Micro light emitting diode Micro LED.
The light-emitting unit and the light-emitting module provided by the embodiment of the disclosure can realize the following technical effects:
by disposing the first electrode at least on the top surface of the second insulating portion; or by disposing a second electrode at least on the top surface of the first insulating portion; or the first electrode is at least arranged on the top surface of the second insulating part, and the second electrode is at least arranged on the top surface of the first insulating part, so that the light emitted by the light-emitting unit is prevented from being conducted in an undesired direction to the greatest extent, and the display effect is improved.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
At least one embodiment is illustrated by the accompanying drawings, which correspond to the accompanying drawings, and which do not form a limitation on the embodiment, wherein elements having the same reference numeral designations are shown as similar elements, and which are not to scale, and wherein:
fig. 1 is a schematic structural diagram of a light emitting unit provided in an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another light-emitting unit provided in the embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another light-emitting unit provided in the embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 5 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 6 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 7 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 8 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 9 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 10 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 11 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 12 is a schematic structural diagram of another light-emitting unit provided in the embodiment of the present disclosure;
fig. 13 is a schematic structural diagram of another light-emitting unit provided in the embodiments of the present disclosure;
fig. 14 is a schematic structural diagram of a light-emitting semiconductor provided in an embodiment of the present disclosure;
fig. 15 is a schematic structural diagram of another light-emitting semiconductor provided in an embodiment of the present disclosure;
fig. 16 is a schematic view of a partial structure of a light emitting unit provided in an embodiment of the present disclosure;
fig. 17 is a schematic structural diagram of a light emitting module according to an embodiment of the disclosure.
Reference numerals:
100: a light emitting unit; 101: a first insulating portion; 102: a second insulating section; 104: a second semiconductor layer; 105: an active layer; 106: a first semiconductor layer; 107: a first ohmic contact layer; 108: a first contact electrode; 109: a second ohmic contact layer; 110: a second contact electrode; 111: a first electrode; 112: a second electrode; 115: a top surface of the second semiconductor layer; 119: a side surface of the second semiconductor layer; 120: a top surface of the second insulating portion; l1: a cross-sectional length of the first portion; l2: a cross-sectional length of the second portion; 121: a non-metal layer; 122: a top surface of the first insulating portion; 200: a light emitting cell layer; 300: a light emitting module.
Detailed Description
So that the manner in which the features and elements of the disclosed embodiments can be understood in detail, a more particular description of the disclosed embodiments, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the appended drawings. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, at least one embodiment may be practiced without these specific details. In other instances, well-known structures and devices may be shown in simplified form in order to simplify the drawing.
As shown in fig. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and 13, in some embodiments, the disclosed embodiments provide a light emitting unit 100 including: a light-emitting semiconductor including a first semiconductor layer 106, an active layer 105, a second semiconductor layer 104, and a depressed structure depressed from the second semiconductor layer 104 to the first semiconductor layer 106, which are stacked in this order;
an insulating layer including a first insulating portion 101 and a second insulating portion 102, the first insulating portion 101 being disposed on a top surface 115 of the second semiconductor layer, the second insulating portion 102 being disposed on a surface of the recessed structure; a first hole structure penetrating through the insulating layer and reaching the first semiconductor layer 106 and a second hole structure penetrating through the insulating layer and reaching the second semiconductor layer 104 are arranged in the light emitting unit 100;
a first electrode 111, the first electrode 111 being disposed in the first pore structure; a second electrode 112, said second electrode 112 being disposed in said second pore structure;
at least one of the following conditions is also satisfied:
the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion;
the second electrode 112 is disposed on at least the top surface 122 of the first insulating portion.
In some embodiments, the undercut structure may be a different shape. Alternatively, as shown in fig. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and 13, the depressed structure may be an inclined-shaped depressed structure, and when the depressed structure is in an inclined shape, the depressed structure may have an inclined surface, or the depressed structure may have a curved surface. Fig. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 and 13 illustrate only an example in which the depressed structure has a slope. Alternatively, as shown in fig. 14, the depressed structure may also be in a stepped shape.
In some embodiments, as shown in fig. 15, the top surface 115 of the second semiconductor layer is a surface of the second semiconductor layer 104 away from the active layer 105, and the position on the second semiconductor layer 104 is as shown in fig. 15. Alternatively, the side surface 119 of the second semiconductor layer is a surface of the second semiconductor layer 104 close to the second insulating portion 102, and a position on the second semiconductor layer 104 is as shown in fig. 15. Optionally, the side 119 of the second semiconductor layer is part of a sunken structure. Alternatively, when the recessed structure has one slope, the side 119 of the second semiconductor layer is a part of the slope.
In some embodiments, as shown in fig. 16, the top surface 122 of the first insulating portion is a surface of the first insulating portion 101 away from the light emitting semiconductor, and the position on the first insulating portion 101 is as shown in fig. 16.
In some embodiments, as shown in fig. 16, the top surface 120 of the second insulating portion is the surface of the second insulating portion 102 away from the light emitting semiconductor, and the position in the second insulating portion 102 is as shown in fig. 16.
In some embodiments, as shown in fig. 1, 2, 3, 4, 5, 6 and 7, the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion. Alternatively, as shown in fig. 8, 9, 10, 11, 12, and 13, the second electrode 112 is disposed at least on the top surface 122 of the first insulating portion. Optionally, the first electrode 111 is disposed on at least a top surface 120 of the second insulating portion, and the second electrode 112 is disposed on at least a top surface 122 of the first insulating portion.
By disposing the first electrode 111 at least on the top surface 120 of the second insulating portion; or by disposing the second electrode 112 at least on the top surface 122 of the first insulating portion; or, by disposing the first electrode 111 at least on the top surface 120 of the second insulating portion and disposing the second electrode 112 at least on the top surface 122 of the first insulating portion, the light emitted from the light emitting unit 100 is prevented from being transmitted in an undesired direction as much as possible, which is advantageous for improving the display effect.
As shown in fig. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 and 13, in some embodiments, the undercut structure includes a chamfer; the first insulating portion 101 is disposed on the top surface 115 of the second semiconductor layer, and the second insulating portion 102 is disposed on the inclined surface.
In some embodiments, as shown in fig. 1 and 2, when the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion, the first hole structure may have two structures. Alternatively, the first hole structure may be a through hole structure as shown in fig. 1. Alternatively, the first hole structure may be a structure as shown in fig. 2, and in fig. 2, the first hole structure is not a through hole structure, and the first hole structure has two portions, and the cross-sectional lengths of the two portions are different.
In some embodiments, as shown in fig. 1, when the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion, the first hole structure is a hole penetrating the insulating layer; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108, the first ohmic contact layer 107 is disposed on a bottom surface of the first hole structure, the first contact electrode 108 is disposed at least on the first ohmic contact layer 107 in the first hole structure, and a top surface 120 of the second insulating portion.
In some embodiments, the intersection of the end of the first hole structure close to the light emitting semiconductor and the surface of the first semiconductor layer 106 is used as a boundary, and the surface of the first semiconductor layer 106 located in the intersection is the bottom surface of the first hole structure. Optionally, the opening of the first hole structure is disposed opposite the bottom surface of the first hole structure.
In some embodiments, as shown in fig. 2, when the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion, the first hole structure includes a first portion penetrating the insulating layer and a second portion, the first portion being adjacent to the light emitting semiconductor; wherein the first portion has a cross-sectional length L1 that is different from the cross-sectional length L2 of the second portion; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108, the first ohmic contact layer 107 is disposed in the first portion, the first contact electrode 108 is disposed at least in the second portion, and a top surface 120 of the second insulating portion.
In some embodiments, as shown in fig. 2, the first portion has a cross-sectional length L1 that is greater than the cross-sectional length L2 of the second portion. Alternatively, one end of the first portion is not in contact with the active layer 105, and the other end of the first portion may extend to an end of the light emitting cell 100.
In some embodiments, as shown in fig. 1, 2, 3, 4 and 5, when the first electrode 111 is disposed at least on the top surface 120 of the second insulating portion, the second hole structure may have two structures. Alternatively, the second hole structure may be a through hole structure as shown in fig. 1 and 2. Alternatively, the second hole structure may be a structure as shown in fig. 3, 4 and 5, and in fig. 3, 4 and 5, the second hole structure is not a through hole structure, and the second hole structure has two portions having different sectional lengths.
In some embodiments, the first pore structure and the second pore structure may be selected for which structure independently of each other. Alternatively, the first hole structure may be a through hole and the second hole structure may be a through hole. Alternatively, the first aperture arrangement may comprise two portions and the second aperture arrangement may comprise two portions. Alternatively, the first hole structure may comprise two parts and the second hole structure may be a through hole. Alternatively, the first hole structure may be a through hole and the second hole structure may comprise two parts.
In some embodiments, as shown in fig. 1 and 2, the second hole structure is a hole through the insulating layer; the second electrode 112 includes a second ohmic contact layer 109 and a second contact electrode 110, the second ohmic contact layer 109 is disposed on a bottom surface of the second hole structure, and at least a portion of the second contact electrode 110 is disposed on the second ohmic contact layer 109 in the second hole structure.
In some embodiments, the intersection of the end of the second hole structure close to the light emitting semiconductor and the surface of the second semiconductor layer 104 is used as a boundary, and the surface of the second semiconductor layer 104 located in the intersection is the bottom surface of the second hole structure. Optionally, the opening of the second pore structure is disposed opposite the bottom surface of the second pore structure.
In some embodiments, as shown in fig. 3, 4 and 5, the second hole structure comprises a third portion and a fourth portion penetrating through the insulating layer, the third portion being located at least in a part or all of the area of the top surface 115 of the second semiconductor layer, the fourth portion being located on a side of the third portion remote from the second semiconductor layer 104; the second electrode 112 includes a second ohmic contact layer 109 and a second contact electrode 110, the second ohmic contact layer 109 is disposed in the third portion, and at least a portion of the second contact electrode 110 is disposed in the fourth portion.
In some embodiments, the third portion is shown in fig. 3 as being located in a partial region of the top surface 115 of the second semiconductor layer.
In some embodiments, the third portion is shown in fig. 4 to be located over the entire area of the top surface 115 of the second semiconductor layer.
In some embodiments, the third portion is also located at a partial or full area of the side 119 of the second semiconductor layer, as shown in fig. 5.
In some embodiments, as shown in fig. 6, the first electrode 111 is also disposed on a partial region of the top surface 122 of the first insulating portion. As shown in fig. 16, optionally, the top surface 122 of the first insulating portion is a surface of the first insulating portion 101 away from the second semiconductor layer 104. Optionally, a projection of a portion of the first electrode 111 disposed on the first insulating portion 101 on the plane of the top surface 115 of the second semiconductor layer is connected to or overlaps a projection of the second ohmic contact layer 109 on the plane of the top surface 115 of the second semiconductor layer.
In this application, the second ohmic contact layer 109 in the third portion is matched with the first electrode 111, so that the light emitted from the light emitting unit 100 in the backlight direction can be completely blocked.
In some embodiments, as shown in fig. 8, 9, 10, 11, 12, and 13, when the second electrode 112 is disposed at least on the top surface 122 of the first insulating portion, the second hole structure may have two structures. Alternatively, the second hole structure may be a through hole structure as shown in fig. 8, 9 and 10. Alternatively, the second hole structure may be a structure as shown in fig. 11, 12 and 13, and in fig. 11, 12 and 13, the second hole structure is not a through hole structure, and the second hole structure has two portions, which are different in sectional length.
In some embodiments, as shown in fig. 8, 9 and 10, when the second electrode 112 is disposed on at least the top surface 122 of the first insulating layer, the second hole structure is a hole penetrating the insulating layer; the second electrode 112 includes a second ohmic contact layer 109 and a second contact electrode 110, the second ohmic contact layer 109 is disposed on the bottom surface of the second hole structure, and the second contact electrode 110 is disposed at least on the second ohmic contact layer 109 in the second hole structure and on the top surface 122 of the first insulating portion.
In some embodiments, the intersection of the end of the second hole structure close to the light emitting semiconductor and the surface of the second semiconductor layer 104 is used as a boundary, and the surface of the second semiconductor layer 104 located in the intersection is the bottom surface of the second hole structure. Optionally, the opening of the second pore structure is disposed opposite the bottom surface of the second pore structure.
In some embodiments, as shown in fig. 11, 12 and 13, when the second electrode 112 is disposed on at least the top surface 122 of the first insulating portion, the second hole structure includes a third portion and a fourth portion penetrating the insulating layer, the third portion is at least located on a part or all of the top surface 115 of the second semiconductor layer, and the fourth portion is located on a side of the third portion away from the second semiconductor layer 104; the second electrode 112 includes a second ohmic contact layer 109 and a second contact electrode 110, the second ohmic contact layer 109 is disposed in the third portion, the second contact electrode 110 is disposed at least in the fourth portion, and is disposed on the top surface 122 of the first insulating portion.
In some embodiments, the third portion is shown in fig. 11 as being located in a partial region of the top surface 115 of the second semiconductor layer.
In some embodiments, the third portion is shown in fig. 12 to be located over the entire area of the top surface 115 of the second semiconductor layer.
In some embodiments, as shown in fig. 13, the third portion is also located at a partial or full area of the side 119 of the second semiconductor layer.
In some embodiments, as shown in fig. 9 and 10, the second electrode 112 is also disposed on a partial region of the top surface 120 of the second insulating portion.
In some embodiments, as shown in fig. 8 and 10, when the second electrode 112 is disposed at least on the top surface 122 of the first insulating portion, the first hole structure may have two structures. Alternatively, the first hole structure may be a through hole structure as shown in fig. 8. Alternatively, the first hole structure may be a structure as shown in fig. 10, and in fig. 10, the first hole structure is not a through hole structure, and the first hole structure has two portions, and the cross-sectional lengths of the two portions are different.
In some embodiments, the first pore structure and the second pore structure may be selected for which structure independently of each other. Alternatively, the first hole structure may be a through hole and the second hole structure may be a through hole. Alternatively, the first aperture arrangement may comprise two portions and the second aperture arrangement may comprise two portions. Alternatively, the first hole structure may comprise two parts and the second hole structure may be a through hole. Alternatively, the first hole structure may be a through hole and the second hole structure may comprise two parts.
In some embodiments, as shown in fig. 8, the first hole structure is a hole through the insulating layer; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108, the first ohmic contact layer 107 is disposed on a bottom surface of the first hole structure, and at least a portion of the first contact electrode 108 is disposed on the first ohmic contact layer 107 in the first hole structure.
In some embodiments, the intersection of the end of the first hole structure close to the light emitting semiconductor and the surface of the first semiconductor layer 106 is used as a boundary, and the surface of the first semiconductor layer 106 located in the intersection is the bottom surface of the first hole structure. Optionally, the opening of the first hole structure is disposed opposite the bottom surface of the first hole structure.
In some embodiments, as shown in fig. 10, the first hole structure includes a first portion and a second portion penetrating the insulating layer, the first portion being adjacent to the light emitting semiconductor; wherein the first portion has a cross-sectional length L1 that is different from the cross-sectional length L2 of the second portion; the first electrode 111 includes a first ohmic contact layer 107 and a first contact electrode 108, the first ohmic contact layer 107 is disposed in the first portion, and at least a portion of the first contact electrode 108 is disposed in the second portion.
In some embodiments, as shown in fig. 10, the first portion has a cross-sectional length L1 that is greater than the cross-sectional length L2 of the second portion. Alternatively, one end of the first portion is not in contact with the active layer 105, and the other end of the first portion may extend to an end of the light emitting cell 100.
In some embodiments, as shown in fig. 10, a projection of a portion of the second electrode 112 on the second insulating portion 102 on the inclined plane is connected to or overlaps a projection of the first ohmic contact layer 107 on the inclined plane.
In this application, the first ohmic contact layer 107 in the first portion and the second electrode 112 can completely block the light emitted from the light emitting unit 100 in the backlight direction.
In some embodiments, as shown in fig. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and 13, the material of the first insulating portion 101 is the same as or different from the material of the second insulating portion 102. Alternatively, fig. 9 and 10 show the case where the material of the first insulating portion 101 is the same as the material of the second insulating portion 102. Alternatively, fig. 1, 2, 3, 4, 5, 6, 7, 8, 11, 12, and 13 show the case where the material of the first insulating portion 101 and the material of the second insulating portion 102 are different. Alternatively, the material of the first insulating portion 101 and the material of the second insulating portion 102 may be selected from silicon nitride, silicon oxide, or silicon oxynitride independently of each other.
In some embodiments, as shown in fig. 7, a metal layer or a non-metal layer 121 is disposed on the top surface of the first electrode 111. Optionally, the top surface of the first electrode 111 is a surface of the first electrode 111 far from the light emitting semiconductor. Fig. 7 shows only an example in which a non-metal layer 121 is provided on the top surface of the first electrode 111.
In some embodiments, the first semiconductor layer may be N-type gallium nitride; alternatively, the second semiconductor layer may be P-type gallium nitride. Alternatively, the active layer may be a multiple quantum well structure.
In some embodiments, the first ohmic contact layer may be Ni-Au (Ni-Au means that the first ohmic contact layer has two layers, in order, a Ni layer and an Au layer from near the first semiconductor layer to far from the first semiconductor layer), Ni-Ag (Ni-Ag means that the first ohmic contact layer has two layers, in order, a Ni layer and an Ag layer from near the first semiconductor layer to far from the first semiconductor layer), Cr-Al (Cr-Al means that the first ohmic contact layer has two layers, in order, a Cr layer and an Al layer from near the first semiconductor layer to far from the first semiconductor layer), TiN, or tungsten nitride.
In some embodiments, the second ohmic contact layer may be ITO-Ag (ITO-Ag means that the second ohmic contact layer has two layers, in order from near to far from the second semiconductor layer, ITO layer and Ag layer, in order), Ni-Ag (Ni-Ag means that the second ohmic contact layer has two layers, in order from near to far from the second semiconductor layer, Ni layer and Ag layer, ITO-Ni-Ag (ITO-Ni-Ag means that the second ohmic contact layer has three layers, in order from near to far from the second semiconductor layer, ITO layer, Ni layer and Ag layer), ITO-Cr-Al (ITO-Cr-Al means that the second ohmic contact layer has three layers, in order from near to far from the second semiconductor layer, ITO layer, Cr layer and Al layer), Ni-Au (Ni-Au means that the second ohmic contact layer has two layers, a Ni layer and an Au layer), TiN, or tungsten nitride in this order from near the second semiconductor layer to far from the second semiconductor layer.
In some embodiments, the material of the first contact electrode may include one or at least two of Au, Pt, Ti, Ag, Al, or Cu.
In some embodiments, the material of the second contact electrode may include one or at least two of Au, Pt, Ti, Ag, Al, or Cu.
As shown in fig. 17, an embodiment of the present disclosure provides a light emitting module 300, including: a light emitting cell layer 200, the light emitting cell layer 200 including a plurality of the light emitting cells 100 described above.
In some embodiments, the plurality of light emitting units 100 may include: at least one of a light emitting diode LED, a Mini LED and a Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one LED. Alternatively, the plurality of light emitting units 100 may include at least one Mini LED. Alternatively, the plurality of light emitting units 100 may include at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one LED, and at least one Mini LED. Alternatively, the plurality of light emitting units 100 may include at least one LED, and at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one Mini LED, and at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one LED, at least one Mini LED, and at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include other light emitting devices other than LEDs, Mini LEDs, Micro LEDs.
In some embodiments, the device type of the light emitting unit 100 may be determined according to practical situations such as process requirements, for example: LED, Mini LED, Micro LED or other light emitting device.
In some embodiments, the plurality of light emitting units 100 are arranged in an array.
The above description and drawings sufficiently illustrate embodiments of the disclosure to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The scope of the disclosed embodiments includes the full ambit of the claims, as well as all available equivalents of the claims. As used in this application, although the terms "first," "second," etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, unless the meaning of the description changes, so long as all occurrences of the "first element" are renamed consistently and all occurrences of the "second element" are renamed consistently. The first and second elements are both elements, but may not be the same element. Furthermore, the words used in the specification are words of description only and are not intended to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Similarly, the term "and/or" as used in this application is meant to encompass any and all possible combinations of one or more of the associated listed. Furthermore, the terms "comprises" and/or "comprising," when used in this application, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Without further limitation, an element defined by the phrase "comprising an …" does not exclude the presence of other like elements in a process, method or apparatus that comprises the element. In this document, each embodiment may be described with emphasis on differences from other embodiments, and the same and similar parts between the respective embodiments may be referred to each other. For methods, products, etc. of the embodiment disclosures, reference may be made to the description of the method section for relevance if it corresponds to the method section of the embodiment disclosure.
Those of skill in the art would appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software may depend upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the disclosed embodiments. It is clear to those skilled in the art that, for convenience and brevity of description, the working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the embodiments disclosed herein, the disclosed methods, products (including but not limited to devices, apparatuses, etc.) may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of a unit may be merely a division of a logical function, and an actual implementation may have another division, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form. Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to implement the present embodiment. In addition, functional units in the embodiments of the present disclosure may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
In the drawings, the width, length, thickness, etc. of structures such as elements or layers may be exaggerated for clarity and descriptive purposes. When an element or layer is referred to as being "disposed on" (or "mounted on," "laid on," "attached to," "coated on," or the like) another element or layer, the element or layer may be directly "disposed on" or "over" the other element or layer, or intervening elements or layers may be present, or even partially embedded in the other element or layer.

Claims (21)

1. A light-emitting unit, comprising:
the light-emitting semiconductor comprises a first semiconductor layer, an active layer, a second semiconductor layer and a sunken structure sunken from the second semiconductor layer to the first semiconductor layer, wherein the first semiconductor layer, the active layer and the second semiconductor layer are sequentially stacked; the undercut structure comprises a chamfer;
an insulating layer including a first insulating portion and a second insulating portion, the first insulating portion being disposed on a top surface of the second semiconductor layer, the second insulating portion being disposed on a surface of the recessed structure; a first hole structure penetrating through the insulating layer and reaching the first semiconductor layer and a second hole structure penetrating through the insulating layer and reaching the second semiconductor layer are arranged in the light-emitting unit; the first hole structure is arranged on the inclined surface;
a first electrode disposed in the first pore structure; a second electrode disposed in the second pore structure;
at least one of the following conditions is also satisfied:
the first electrode is arranged at least on the top surface of the second insulating part;
the second electrode is disposed at least on a top surface of the first insulating portion.
2. The light-emitting unit according to claim 1, wherein the first insulating portion is provided on a top surface of the second semiconductor layer, and the second insulating portion is provided on the slope.
3. The light-emitting unit according to claim 1, wherein when the first electrode is provided at least on the top surface of the second insulating portion, the first hole structure is a hole penetrating the insulating layer; the first electrode includes a first ohmic contact layer disposed on a bottom surface of the first hole structure, and a first contact electrode disposed at least on the first ohmic contact layer in the first hole structure and on a top surface of the second insulating portion.
4. The light-emitting unit according to claim 1, wherein when the first electrode is provided at least on a top surface of the second insulating portion, the first hole structure includes a first portion and a second portion penetrating the insulating layer, the first portion being adjacent to the light-emitting semiconductor; wherein the first portion has a cross-sectional length that is different from the cross-sectional length of the second portion; the first electrode includes a first ohmic contact layer disposed in the first portion, and a first contact electrode disposed at least in the second portion and a top surface of the second insulating portion.
5. The light-emitting unit according to claim 3 or 4, wherein the second hole structure is a hole penetrating the insulating layer; the second electrode comprises a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is arranged on the bottom surface of the second hole structure, and at least part of the second contact electrode is arranged on the second ohmic contact layer in the second hole structure.
6. A light-emitting unit according to claim 3 or 4, wherein the second hole structure comprises a third portion and a fourth portion penetrating the insulating layer, the third portion being located at least in a part or all of a top surface of the second semiconductor layer, the fourth portion being located on a side of the third portion remote from the second semiconductor layer; the second electrode includes a second ohmic contact layer disposed in the third portion and a second contact electrode at least a portion of which is disposed in the fourth portion.
7. The light-emitting unit according to claim 6, wherein the third portion is also located in a partial or entire region of a side surface of the second semiconductor layer.
8. The light-emitting unit according to claim 6, wherein the first electrode is further provided to a partial region of a top surface of the first insulating portion.
9. The light-emitting unit according to claim 8, wherein a projection of a portion of the first electrode on the first insulating portion on a plane of a top surface of the second semiconductor layer is connected to or overlaps a projection of the second ohmic contact layer on a plane of a top surface of the second semiconductor layer.
10. The light-emitting unit according to claim 2, wherein when the second electrode is disposed at least on a top surface of the first insulating layer, the second hole structure is a hole penetrating the insulating layer; the second electrode comprises a second ohmic contact layer and a second contact electrode, the second ohmic contact layer is arranged on the bottom surface of the second hole structure, and the second contact electrode is at least arranged on the second ohmic contact layer in the second hole structure and arranged on the top surface of the first insulating part.
11. The light-emitting unit according to claim 2, wherein when the second electrode is disposed at least on the top surface of the first insulating layer, the second hole structure comprises a third portion and a fourth portion penetrating the insulating layer, the third portion being at least in a part or all of the top surface of the second semiconductor layer, and the fourth portion being on a side of the third portion away from the second semiconductor layer; the second electrode includes a second ohmic contact layer disposed in the third portion and a second contact electrode disposed at least in the fourth portion and on a top surface of the first insulating portion.
12. The light-emitting unit according to claim 11, wherein the third portion is also located in a partial or entire region of a side surface of the second semiconductor layer.
13. The light-emitting unit according to claim 10 or 11, wherein the second electrode is further provided in a partial region of a top surface of the second insulating portion.
14. The light-emitting unit according to claim 13, wherein the first hole structure is a hole penetrating the insulating layer; the first electrode comprises a first ohmic contact layer and a first contact electrode, the first ohmic contact layer is arranged on the bottom surface of the first hole structure, and at least part of the first contact electrode is arranged on the first ohmic contact layer in the first hole structure.
15. The light-emitting unit according to claim 13, wherein the first hole structure comprises a first portion and a second portion penetrating the insulating layer, the first portion being adjacent to the light-emitting semiconductor; wherein the first portion has a cross-sectional length that is different from the cross-sectional length of the second portion; the first electrode includes a first ohmic contact layer disposed in the first portion and a first contact electrode at least a portion of which is disposed in the second portion.
16. The light-emitting unit according to claim 15, wherein a projection of a portion of the second electrode on the second insulating portion on the inclined surface is connected to or overlaps a projection of the first ohmic contact layer on the inclined surface.
17. The light-emitting unit according to claim 1, wherein a material of the first insulating portion is the same as or different from a material of the second insulating portion.
18. The light-emitting unit according to claim 1, wherein a top surface of the first electrode is provided with a metal layer or a non-metal layer.
19. A light emitting module, comprising: a light emitting cell layer comprising a plurality of light emitting cells according to any one of claims 1 to 18.
20. The lighting module of claim 19, wherein the plurality of lighting units comprise:
a light emitting diode LED.
21. The lighting module of claim 20, wherein the Light Emitting Diodes (LEDs) comprise at least one of Mini LEDs and Micro LEDs.
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