CN112701202A - Light-emitting unit, light-emitting module, display screen and display - Google Patents
Light-emitting unit, light-emitting module, display screen and display Download PDFInfo
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- CN112701202A CN112701202A CN202110304699.0A CN202110304699A CN112701202A CN 112701202 A CN112701202 A CN 112701202A CN 202110304699 A CN202110304699 A CN 202110304699A CN 112701202 A CN112701202 A CN 112701202A
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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Abstract
The application relates to the technical field of semiconductors, and discloses a light-emitting unit, includes: an insulating layer provided with at least one through hole; the ohmic contact layer is arranged on the bottom surface of the through hole; an electrode disposed on the ohmic contact layer; a light emitting semiconductor connected to one side of the insulating layer near the bottom surface of the via hole; the light-emitting semiconductor comprises a second semiconductor layer, an active layer and a first semiconductor layer which are sequentially stacked from one side close to the insulating layer to one side far away from the insulating layer; and one surface of the insulating layer, which is far away from the light-emitting semiconductor, is positioned above the plane of the second semiconductor layer. The application provides a luminescence unit through setting up ohmic contact layer and electrode in a through-hole, can make ohmic contact layer's length and the length of the cross-section of electrode keep unanimous, reduces the shading area, improves the light-emitting ratio. The application also discloses a luminous module, a display screen and a display.
Description
Technical Field
The present application relates to the field of semiconductor technology, and for example, to a light emitting unit, a light emitting module, a display screen, and a display.
Background
At present, it is generally necessary to provide an ohmic contact layer between the semiconductor layer and the electrode to form an ohmic contact.
In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in the related art:
as shown in fig. 1, the length L1 of the ohmic contact layer 11 is longer than the length L2 of the cross section of the electrode 12 disposed on the ohmic contact layer 11, so that the light-shielding area is increased, and the light directly emitted and reflected by the ohmic contact layer 11 and passing through the vicinity of the ohmic contact layer 11 is shielded by the ohmic contact layer 11 and cannot exit to the light-exiting surface, thereby reducing the light-exiting ratio.
Disclosure of Invention
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview nor is intended to identify key/critical elements or to delineate the scope of such embodiments but rather as a prelude to the more detailed description that is presented later.
The embodiment of the disclosure provides a light-emitting unit, a light-emitting module, a display screen and a display, which aim to solve the technical problems that the length of an ohmic contact layer is longer than the length of the cross section of an electrode arranged on the ohmic contact layer, the shading area is increased, and the light-emitting proportion is reduced.
In some embodiments, a light emitting unit includes:
an insulating layer provided with at least one through hole;
the ohmic contact layer is arranged on the bottom surface of the through hole;
an electrode disposed on the ohmic contact layer;
a light emitting semiconductor connected to one side of the insulating layer near the bottom surface of the through hole; the light-emitting semiconductor comprises a second semiconductor layer, an active layer and a first semiconductor layer which are sequentially stacked from one side close to the insulating layer to one side far away from the insulating layer;
one surface of the insulating layer, which is far away from the light-emitting semiconductor, is positioned above the plane of the first surface of the second semiconductor layer;
the first surface of the second semiconductor layer is a surface of the second semiconductor layer far away from the active layer.
In some embodiments, a face of the insulating layer remote from the light emitting semiconductor is planar.
In some embodiments, the cross-sectional shape of the same through-hole in a direction parallel to the bottom surface is the same or different.
In some embodiments, the cross-sectional area of the same through-hole in a direction parallel to the bottom surface is the same or different.
In some embodiments, the cross-sectional shape of the same through hole along the direction parallel to the bottom surface is circular, oval, rectangular, square, parallelogram, rhombus, hexagon or irregular.
In some embodiments, a projection of the opening of the through hole on a plane of the bottom surface of the through hole covers the bottom surface of the through hole.
In some embodiments, the light emitting semiconductor includes a sunken structure sunken from the second semiconductor layer to the first semiconductor layer.
In some embodiments, when the insulating layer is provided with one via, the via is located on the first semiconductor layer or the second semiconductor layer.
In some embodiments, when the insulating layer is provided with two through holes, the two through holes are respectively located on the first semiconductor layer and the second semiconductor layer.
In some embodiments, materials of the ohmic contact layers respectively disposed in the two vias are the same or different.
In some embodiments, the materials of the electrodes on the ohmic contact layers respectively disposed in the two vias are the same or different.
In some embodiments, the via on the first semiconductor layer is a first via; the through hole positioned on the second semiconductor layer is a second through hole;
and in the axial extending direction of the first through hole, the second semiconductor layer is positioned between one surface, far away from the bottom surface of the first through hole, of the electrode in the first through hole and the first semiconductor layer.
In some embodiments, the electrode is disposed on the ohmic contact layer in the via.
In some embodiments, the ohmic contact layer has a cross-sectional length less than or equal to a cross-sectional length of the electrode.
In some embodiments, a light emitting module includes a light emitting unit layer including the light emitting unit described above.
In some embodiments, a plurality of the light emitting units includes: at least one of a light emitting diode LED, a Mini light emitting diode LED and a Micro light emitting diode Micro LED.
In some embodiments, a plurality of the light emitting units are arranged in an array.
In some embodiments, a display module includes the above light emitting module.
In some embodiments, a display screen includes the display module.
In some embodiments, a display includes the display screen.
The luminous unit, the luminous module, the display screen and the display that this disclosed embodiment provided can realize following technological effect:
in this application, through setting up ohmic contact layer and electrode in a through-hole, can make ohmic contact layer's length keep unanimous with the length of the cross-section of electrode, reduced the shading area, make directly after transmission and reflection can exit to the play plain noodles through near ohmic contact layer's light, improved the light-emitting ratio.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
At least one embodiment is illustrated by the accompanying drawings, which correspond to the accompanying drawings, and which do not form a limitation on the embodiment, wherein elements having the same reference numeral designations are shown as similar elements, and which are not to scale, and wherein:
FIG. 1 is a schematic diagram of a light-emitting unit corresponding to the prior art;
fig. 2 is a schematic structural diagram of a light emitting unit provided in an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another light-emitting unit provided in the embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a light emitting module provided in the embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a display module according to an embodiment of the disclosure;
FIG. 6 is a schematic structural diagram of a display screen provided by an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of a display provided in an embodiment of the present disclosure.
Reference numerals:
10: a light emitting unit; 11: an ohmic contact layer; 12: an electrode; 13: a first semiconductor layer; 14: a second semiconductor layer; 15: an active layer; 100: a light emitting unit; 101: an insulating layer; 102: an ohmic contact layer; 103: an electrode; 104: a second semiconductor layer; 105: an active layer; 106: a first semiconductor layer; 107: a first ohmic contact layer; 108: a first electrode; 109: a second ohmic contact layer; 110: a second electrode; 200: a light emitting cell layer; 300: a light emitting module; 400: a display module; 500: a display screen; 600: a display.
Detailed Description
So that the manner in which the features and elements of the disclosed embodiments can be understood in detail, a more particular description of the disclosed embodiments, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the appended drawings. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, at least one embodiment may be practiced without these specific details. In other instances, well-known structures and devices may be shown in simplified form in order to simplify the drawing.
As shown in fig. 2, an embodiment of the present disclosure provides a light emitting unit 100, including:
an insulating layer 101 provided with at least one through hole;
the ohmic contact layer 102 is at least arranged on the bottom surface of the through hole;
an electrode 103 disposed on the ohmic contact layer 102;
a light emitting semiconductor connected to one side of the insulating layer 101 near the bottom surface of the via hole; the light-emitting semiconductor includes, from the side close to the insulating layer 101 to the side far from the insulating layer 101, a second semiconductor layer 104, an active layer 105, and a first semiconductor layer 106 which are stacked in this order;
one surface of the insulating layer 101, which is far away from the light-emitting semiconductor, is located above the plane of the first surface of the second semiconductor layer 104;
the first surface of the second semiconductor layer is a surface of the second semiconductor layer far away from the active layer.
In some embodiments, the intersection of the end of the through hole close to the light emitting semiconductor and the surface of the light emitting semiconductor is used as a boundary, and the surface of the light emitting semiconductor located in the intersection is used as the bottom surface of the through hole.
In some embodiments, the light emitting unit may be, for example, a Micro light emitting diode (Micro LED).
In some embodiments, as shown in fig. 2, the insulating layer 101 may be provided with at least one via. Alternatively, the insulating layer 101 may be provided with a through hole. Alternatively, the insulating layer 101 may be provided with two through holes. Fig. 2 shows only an example of the case where the insulating layer 101 is provided with one through hole.
In some embodiments, the ohmic contact layer 102 may be disposed on a bottom surface of the via.
In some embodiments, the electrode 103 is disposed over the ohmic contact layer 102 in the via.
In some embodiments, a light emitting semiconductor is connected to a side of the insulating layer 101 near the bottom surface of the via hole, and the light emitting semiconductor includes a second semiconductor layer 104, an active layer 105, and a first semiconductor layer 106, which are sequentially stacked, from the side near the insulating layer 101 to the side far from the insulating layer 101. Alternatively, the light emitting semiconductor includes a depressed structure depressed from the second semiconductor layer 104 to the first semiconductor layer 106. Alternatively, the insulating layer 101 is connected to one side of the light emitting semiconductor having the depression structure.
In some embodiments, as further shown in fig. 2, the side of the insulating layer 101 away from the light emitting semiconductor is above the plane of the second semiconductor layer 104. Alternatively, the surface of the insulating layer 101 far from the light-emitting semiconductor may be non-planar, for example, a part of the surface of the insulating layer 101 far from the light-emitting semiconductor has some recesses or some protrusions, and at this time, the lowest point on the surface of the insulating layer 101 far from the light-emitting semiconductor is located above the plane of the second semiconductor layer 104. Optionally, a surface of the insulating layer 101 away from the light emitting semiconductor is a plane. Optionally, a surface of the insulating layer 101 away from the light emitting semiconductor is a plane parallel to the second semiconductor layer 104. Fig. 2 exemplarily shows a case where a surface of the insulating layer 101 remote from the light-emitting semiconductor is a plane.
In the application, the ohmic contact layer 102 and the electrode 103 are arranged in the through hole, so that the length of the ohmic contact layer 102 is consistent with that of the cross section of the electrode 103, the shading area is reduced, light which is directly emitted and reflected and passes through the position near the ohmic contact layer 102 can be emitted to the light emitting surface, and the light emitting proportion is improved.
In some embodiments, the cross-sectional shape of the same via in a direction parallel to the bottom surface is the same or different.
In some embodiments, the shape of the through-hole may be a regular shape. Alternatively, the through-hole may be cylindrical in shape. Alternatively, the through-hole may be cylindrical in shape, i.e., the cross-sectional shape of the through-hole near the bottom surface is the same as the cross-sectional shape far from the bottom surface.
In some embodiments, the shape of the through-hole may be irregular. Alternatively, the cross-sectional shape of the through-hole near the bottom surface may be circular, and the cross-sectional shape of the through-hole far from the bottom surface may be elliptical, that is, the cross-sectional shape of the through-hole near the bottom surface is different from the cross-sectional shape of the through-hole far from the bottom surface.
In some embodiments, the cross-sectional area of the same via in a direction parallel to the bottom surface is the same or different.
In some embodiments, the shape of the through-hole may be a regular shape. Alternatively, the through-hole may be cylindrical in shape. Alternatively, the through-hole may be cylindrical in shape, i.e., the cross-sectional area of the through-hole near the bottom surface is the same as the cross-sectional area far from the bottom surface.
In some embodiments, the shape of the through-hole may be irregular. Alternatively, the cross-sectional shape of the through-hole near the bottom surface may be circular, and the cross-sectional shape of the through-hole far from the bottom surface may be circular, and the cross-sectional area of the through-hole far from the bottom surface is larger than the cross-sectional area near the bottom surface, i.e., the cross-sectional shape of the through-hole near the bottom surface is the same as the cross-sectional shape far from the bottom surface, but the cross-sectional area of the through-hole near the bottom surface is different from the cross-sectional.
In some embodiments, the cross-sectional shape of the same via hole in a direction parallel to the bottom surface is a circle, an ellipse, a rectangle, a square, a parallelogram, a rhombus, a hexagon, or an irregular shape.
In some embodiments, the cross-sectional shape of different cross-sections of the same via hole in a direction parallel to the bottom surface is a combination of circular, elliptical, rectangular, square, parallelogram, diamond, hexagonal, or irregular shapes. Alternatively, the cross-sectional shape of the through-hole near the bottom surface may be circular, and the cross-sectional shape of the through-hole far from the bottom surface may be elliptical, that is, the cross-sectional shapes of different cross-sections of the same through-hole in a direction parallel to the bottom surface may be a combination of circular and elliptical shapes.
In some embodiments, a projection of the opening of the via onto a plane of the bottom surface of the via covers the bottom surface of the via.
In some embodiments, when the shape of the through hole is a regular shape, the area and the shape of the opening of the through hole are the same as those of the bottom surface of the through hole, and the projection of the opening of the through hole on the plane of the bottom surface of the through hole covers the bottom surface of the through hole.
In some embodiments, when the shape of the through-hole is irregular, the shape and the area of the opening of the through-hole are not particularly limited, and the shape and the area of the bottom surface of the through-hole are not particularly limited, as long as the projection of the opening of the through-hole on the plane of the bottom surface of the through-hole can cover the bottom surface of the through-hole.
In some embodiments, when the insulating layer 101 is provided with one via, the via is located on the first semiconductor layer 106 or the second semiconductor layer 104.
In some embodiments, as shown in fig. 2, when the insulating layer 101 is provided with one via hole, the via hole may be located on the first semiconductor layer 106. Alternatively, the via may be located on the second semiconductor layer 104. Fig. 2 exemplarily shows a case where the via hole is located on the first semiconductor layer 106.
In some embodiments, when the through hole is located on the first semiconductor layer, the intersection of one end of the through hole close to the light emitting semiconductor and the surface of the first semiconductor layer is used as a boundary, and the surface of the first semiconductor layer located in the intersection is the bottom surface of the through hole. Optionally, when the through hole is located on the second semiconductor layer, an intersection of one end of the through hole close to the light emitting semiconductor and the surface of the second semiconductor layer is used as a boundary, and the surface of the second semiconductor layer located in the intersection is used as a bottom surface of the through hole.
As shown in fig. 3, in some embodiments, when the insulating layer 101 is provided with two through holes, the two through holes are respectively located on the first semiconductor layer 106 and the second semiconductor layer 104. Alternatively, the materials of the ohmic contact layers 102 respectively disposed in the two via holes are the same or different. Alternatively, the materials of the electrodes 103 on the ohmic contact layers 102 respectively disposed in the two through holes are the same or different.
As shown in fig. 3, in some embodiments, the insulating layer 101 is provided with two vias, which are located on the first semiconductor layer 106 and the second semiconductor layer 104, respectively. The through hole on the first semiconductor layer 106 is a first through hole; the via hole on the second semiconductor layer 104 is a second via hole. Optionally, the ohmic contact layer 102 on the bottom surface of the first via is a first ohmic contact layer 107, the ohmic contact layer 102 on the bottom surface of the second via is a second ohmic contact layer 109, and the materials of the first ohmic contact layer 107 and the second ohmic contact layer 109 are the same or different. Optionally, the electrode 103 disposed on the first ohmic contact layer 107 in the first via hole is a first electrode 108, the electrode 103 disposed on the second ohmic contact layer 109 in the second via hole is a second electrode 110, and the material of the electrode 103 of the first electrode 108 is the same as or different from the material of the electrode 103 of the second electrode 110.
In some embodiments, an intersection of one end of the first via hole close to the light emitting semiconductor and a surface of the first semiconductor layer is used as a boundary, and the surface of the first semiconductor layer located in the intersection is a bottom surface of the first via hole. Optionally, an intersection of one end of the second through hole close to the light emitting semiconductor and the surface of the second semiconductor layer is used as a boundary, and the surface of the second semiconductor layer located in the intersection is a bottom surface of the second through hole.
In some embodiments, the area of the cross section of the first through-hole in the direction parallel to the bottom surface of the first through-hole does not necessarily have to be in relation to the area of the cross section of the second through-hole in the direction parallel to the bottom surface of the second through-hole. Alternatively, the area of the cross section of the first through hole in the direction parallel to the bottom surface of the first through hole may be larger than the area of the cross section of the second through hole in the direction parallel to the bottom surface of the second through hole. Alternatively, the area of the cross section of the first through hole in the direction parallel to the bottom surface of the first through hole may be smaller than the area of the cross section of the second through hole in the direction parallel to the bottom surface of the second through hole.
In some embodiments, when the first through-hole and the second through-hole are both cylindrical, the diameter of the cross section of the first through-hole in the direction parallel to the bottom surface of the first through-hole does not necessarily have a relationship with the diameter of the cross section of the second through-hole in the direction parallel to the bottom surface of the second through-hole. Alternatively, the diameter of a cross section of the first through-hole in a direction parallel to the bottom surface of the first through-hole may be larger than the diameter of a cross section of the second through-hole in a direction parallel to the bottom surface of the second through-hole. Alternatively, the diameter of a cross section of the first through hole in a direction parallel to the bottom surface of the first through hole may be smaller than the diameter of a cross section of the second through hole in a direction parallel to the bottom surface of the second through hole.
In some embodiments, as shown in fig. 3, the via on the first semiconductor layer 106 is a first via; the through hole on the second semiconductor layer 104 is a second through hole;
and in the axial extending direction of the first through hole, the second semiconductor layer is positioned between one surface, far away from the bottom surface of the first through hole, of the electrode in the first through hole and the first semiconductor layer.
In some embodiments, as shown in fig. 3, the height of the upper surface of the first electrode 108 is higher than the plane of the first surface of the second semiconductor layer 104. Optionally, the upper surface of the first electrode 108 is a surface of the first electrode 108 away from the bottom surface of the first via.
In some embodiments, as shown in FIG. 3, the ohmic contact layer has a cross-sectional length less than or equal to the cross-sectional length of the electrode.
In some embodiments, as shown in fig. 3, a cross-sectional length L3 of the first ohmic contact layer is less than or equal to a cross-sectional length L4 of the first electrode. Fig. 3 shows, by way of example only, the case where the sectional length L3 of the first ohmic contact layer is equal to the sectional length L4 of the first electrode.
In some embodiments, as shown in fig. 3, a cross-sectional length L5 of the second ohmic contact layer is less than or equal to a cross-sectional length L6 of the second electrode. Fig. 3 shows, by way of example only, the case where the sectional length L5 of the second ohmic contact layer is equal to the sectional length L6 of the second electrode.
In some embodiments, the first semiconductor layer may be N-type gallium nitride; alternatively, the second semiconductor layer may be P-type gallium nitride. Alternatively, the active layer may be a multiple quantum well structure. Alternatively, the insulating layer may be a silicon oxide material.
In some embodiments, the first ohmic contact layer may be Ni — Au (Ni-Au means that the first ohmic contact layer has two layers, in order, a Ni layer and an Au layer from a side near the bottom surface of the first via hole to a side away from the bottom surface of the first via hole), Ni-Ag (Ni-Ag means that the first ohmic contact layer has two layers, in order, a Ni layer and an Ag layer from a side near the bottom surface of the first via hole to a side away from the bottom surface of the first via hole), Cr-Al (Cr-Al means that the first ohmic contact layer has two layers, in order, a Cr layer and an Al layer from a side near the bottom surface of the first via hole to a side away from the bottom surface of the first via hole), TiN, or tungsten nitride.
In some embodiments, the second ohmic contact layer may be ITO-Ag (ITO-Ag means that the second ohmic contact layer has two layers, in order, an ITO layer and an Ag layer from a side near the bottom surface of the second via hole to a side away from the bottom surface of the second via hole), Ni-Ag (Ni-Ag means that the second ohmic contact layer has two layers, in order, an Ni layer and an Ag layer from a side near the bottom surface of the second via hole to a side away from the bottom surface of the second via hole), ITO-Ni-Ag (ITO-Ni-Ag means that the second ohmic contact layer has three layers, in order, an ITO layer, a Ni layer and an Ag layer from a side near the bottom surface of the second via hole to a side away from the bottom surface of the second via hole, ITO-Cr-Al (ITO-Cr-Al means that the second ohmic contact layer has three layers, in order, from a side near the bottom surface of the second via hole to a side away from the bottom surface of the second via hole, an ITO layer, a Cr layer, and an Al layer in this order), Ni — Au (Ni — Au means that the second ohmic contact layer has two layers, a Ni layer and an Au layer in this order from the side near the bottom surface of the second through-hole to the side far from the bottom surface of the second through-hole), TiN, or tungsten nitride.
In some embodiments, the first ohmic contact layer may be the same material as the second ohmic contact layer, for example, the first ohmic contact layer may be Ni-Ag and the second ohmic contact layer may be Ni-Ag. Alternatively, the first ohmic contact layer may be different from the second ohmic contact layer in material, for example, the first ohmic contact layer may be Ni-Au and the second ohmic contact layer may be ITO-Ag.
In some embodiments, the material of the first electrode may include one or at least two of Au, Pt, Ti, Ag, Al, or Cu.
In some embodiments, the material of the second electrode may include one or at least two of Au, Pt, Ti, Ag, Al, or Cu.
As shown in fig. 4, the embodiment of the present disclosure provides a light emitting module 300, which includes a light emitting unit layer 200, wherein the light emitting unit layer 200 includes a plurality of light emitting units 100.
In some embodiments, the plurality of light emitting units 100 may include: at least one of LED, Mini LED and Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one LED. Alternatively, the plurality of light emitting units 100 may include at least one Mini LED. Alternatively, the plurality of light emitting units 100 may include at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one LED, and at least one Mini LED. Alternatively, the plurality of light emitting units 100 may include at least one LED, and at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one Mini LED, and at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include at least one LED, at least one Mini LED, and at least one Micro LED. Alternatively, the plurality of light emitting units 100 may include other light emitting devices other than LEDs, Mini LEDs, Micro LEDs.
In some embodiments, the device type of the light emitting unit 100 may be determined according to practical situations such as process requirements, for example: LED, Mini LED, Micro LED or other light emitting device.
In some embodiments, the plurality of light emitting units 100 are arranged in an array.
As shown in fig. 5, an embodiment of the disclosure provides a display module 400 including the light emitting module 300. In some embodiments, the display module 400 may support 3D display.
As shown in fig. 6, an embodiment of the disclosure provides a display screen 500 including the display module 400. In some embodiments, the display screen 500 may perform a 3D display.
As shown in fig. 7, an embodiment of the present disclosure provides a display 600 including the display screen 500 described above. In some embodiments, display 600 may perform 3D display. In some embodiments, the display 600 may also include other components for supporting the normal operation of the display 600, such as: at least one of a communication interface, a frame, a control circuit, and the like.
The above description and drawings sufficiently illustrate embodiments of the disclosure to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The scope of the disclosed embodiments includes the full ambit of the claims, as well as all available equivalents of the claims. As used in this application, although the terms "first," "second," etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, unless the meaning of the description changes, so long as all occurrences of the "first element" are renamed consistently and all occurrences of the "second element" are renamed consistently. The first and second elements are both elements, but may not be the same element. Furthermore, the words used in the specification are words of description only and are not intended to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Similarly, the term "and/or" as used in this application is meant to encompass any and all possible combinations of one or more of the associated listed. Furthermore, the terms "comprises" and/or "comprising," when used in this application, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Without further limitation, an element defined by the phrase "comprising an …" does not exclude the presence of other like elements in a process, method or apparatus that comprises the element. In this document, each embodiment may be described with emphasis on differences from other embodiments, and the same and similar parts between the respective embodiments may be referred to each other. For methods, products, etc. of the embodiment disclosures, reference may be made to the description of the method section for relevance if it corresponds to the method section of the embodiment disclosure.
Those of skill in the art would appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software may depend upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the disclosed embodiments. It is clear to those skilled in the art that, for convenience and brevity of description, the working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the embodiments disclosed herein, the disclosed methods, products (including but not limited to devices, apparatuses, etc.) may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of a unit may be merely a division of a logical function, and an actual implementation may have another division, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form. Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to implement the present embodiment. In addition, functional units in the embodiments of the present disclosure may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
In the drawings, the width, length, thickness, etc. of structures such as elements or layers may be exaggerated for clarity and descriptive purposes. When an element or layer is referred to as being "disposed on" (or "mounted on," "laid on," "attached to," "coated on," or the like) another element or layer, the element or layer may be directly "disposed on" or "over" the other element or layer, or intervening elements or layers may be present, or even partially embedded in the other element or layer.
Claims (19)
1. A light-emitting unit, comprising:
an insulating layer provided with at least one through hole;
the ohmic contact layer is arranged on the bottom surface of the through hole;
an electrode disposed on the ohmic contact layer;
a light emitting semiconductor connected to one side of the insulating layer near the bottom surface of the through hole; the light-emitting semiconductor comprises a second semiconductor layer, an active layer and a first semiconductor layer which are sequentially stacked from one side close to the insulating layer to one side far away from the insulating layer;
one surface of the insulating layer, which is far away from the light-emitting semiconductor, is positioned above the plane of the first surface of the second semiconductor layer;
the first surface of the second semiconductor layer is a surface of the second semiconductor layer far away from the active layer.
2. The light-emitting unit according to claim 1, wherein a surface of the insulating layer remote from the light-emitting semiconductor is a plane.
3. The light-emitting unit according to claim 1 or 2, wherein the cross-sectional shapes of the same through-hole in a direction parallel to the bottom surface are the same or different.
4. The light-emitting unit according to claim 1 or 2, wherein cross-sectional areas of the same through-hole in a direction parallel to the bottom surface are the same or different.
5. The light-emitting unit according to claim 1 or 2, wherein a cross-sectional shape of the same through-hole in a direction parallel to the bottom surface is a circular shape, an oval shape, a rectangular shape, a square shape, a parallelogram shape, a rhombus shape, a hexagon shape, or an irregular shape.
6. The light-emitting unit according to claim 1 or 2, wherein a projection of the opening of the through hole on a plane where the bottom surface of the through hole is located covers the bottom surface of the through hole.
7. The light-emitting cell according to claim 1 or 2, wherein the light-emitting semiconductor comprises a depressed structure depressed from the second semiconductor layer to the first semiconductor layer.
8. The light-emitting unit according to claim 7, wherein when the insulating layer is provided with one via, the via is located on the first semiconductor layer or the second semiconductor layer.
9. The light-emitting unit according to claim 7, wherein when the insulating layer is provided with two through holes, the two through holes are respectively located on the first semiconductor layer and the second semiconductor layer.
10. The light-emitting unit according to claim 9, wherein materials of the ohmic contact layers respectively disposed in the two through holes are the same or different.
11. The light-emitting unit according to claim 9, wherein materials of the electrodes on the ohmic contact layers respectively disposed in the two through holes are the same or different.
12. The light-emitting unit according to claim 9, wherein the via hole on the first semiconductor layer is a first via hole; the through hole positioned on the second semiconductor layer is a second through hole;
and in the axial extending direction of the first through hole, the second semiconductor layer is positioned between one surface, far away from the bottom surface of the first through hole, of the electrode in the first through hole and the first semiconductor layer.
13. The light-emitting unit according to claim 1, wherein a cross-sectional length of the ohmic contact layer is less than or equal to a cross-sectional length of the electrode.
14. A light emitting module comprising a light emitting unit layer including a plurality of light emitting units according to any one of claims 1 to 13.
15. The lighting module of claim 14, wherein the plurality of lighting units comprise:
at least one of a light emitting diode LED, a Mini light emitting diode LED and a Micro light emitting diode Micro LED.
16. The illumination module according to claim 14 or 15, wherein the plurality of illumination units are arranged in an array.
17. A display module comprising the light-emitting module according to any one of claims 14 to 16.
18. A display screen comprising the display module of claim 17.
19. A display comprising the display screen of claim 18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110304699.0A CN112701202A (en) | 2021-03-23 | 2021-03-23 | Light-emitting unit, light-emitting module, display screen and display |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110304699.0A CN112701202A (en) | 2021-03-23 | 2021-03-23 | Light-emitting unit, light-emitting module, display screen and display |
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Application publication date: 20210423 |