CN112736169A - Light emitting device and display apparatus - Google Patents
Light emitting device and display apparatus Download PDFInfo
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- CN112736169A CN112736169A CN202110337134.2A CN202110337134A CN112736169A CN 112736169 A CN112736169 A CN 112736169A CN 202110337134 A CN202110337134 A CN 202110337134A CN 112736169 A CN112736169 A CN 112736169A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The application relates to the technical field of display, and discloses a light-emitting device, which comprises: at least two semiconductor light emitting layers; at least one first semiconductor layer and at least one second semiconductor layer are correspondingly arranged on two sides of each semiconductor light emitting layer respectively; wherein, at least two semiconductor light emitting layers are stacked; and the first semiconductor layer corresponding to at least one semiconductor light-emitting layer in the at least two semiconductor light-emitting layers leads out one electrode to the backlight side of the light-emitting device, and the second semiconductor layer leads out the other electrode to the light-emitting side of the light-emitting device. According to the scheme provided by the application, the semiconductor light emitting layers are stacked, so that the service life of the light emitting device can be prolonged. The application also discloses a display device.
Description
Technical Field
The present invention relates to the field of display technologies, and for example, to a light emitting device and a display apparatus.
Background
Currently, all pixels on a Light Emitting Diode (LED) display screen are tiled in the same plane.
Disclosure of Invention
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview nor is intended to identify key/critical elements or to delineate the scope of such embodiments but rather as a prelude to the more detailed description that is presented later.
The embodiment of the disclosure provides a light emitting device and a display device.
In some embodiments, a light emitting device, comprising:
at least two semiconductor light emitting layers; at least one first semiconductor layer and at least one second semiconductor layer are correspondingly arranged on two sides of each semiconductor light emitting layer respectively;
wherein, at least two semiconductor light emitting layers are stacked; and the first semiconductor layer corresponding to at least one semiconductor light-emitting layer in the at least two semiconductor light-emitting layers leads out one electrode to the backlight side of the light-emitting device, and the second semiconductor layer leads out the other electrode to the light-emitting side of the light-emitting device.
In some embodiments, a display device includes a light emitting device as described above.
The light-emitting device and the display device provided by the embodiment of the disclosure can realize the following technical effects:
the semiconductor light emitting layers are arranged in a stacked mode, so that the service life of the light emitting device can be prolonged.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
At least one embodiment is illustrated by the accompanying drawings, which correspond to the accompanying drawings, and which do not form a limitation on the embodiment, wherein elements having the same reference numeral designations are shown as similar elements, and which are not to scale, and wherein:
fig. 1 shows a schematic view of a structure of a light emitting device in an embodiment of the present disclosure;
FIG. 2 shows a schematic diagram of an overlap region of a light emitting device in an embodiment of the present disclosure;
FIG. 3 shows another schematic diagram of an overlap region of a light emitting device in an embodiment of the present disclosure;
FIG. 4 shows another schematic diagram of an overlap region of a light emitting device in an embodiment of the present disclosure;
FIG. 5 shows another schematic diagram of an overlap region of a light emitting device in an embodiment of the present disclosure;
FIG. 6 shows a schematic diagram of a reflective layer of a light emitting device in an embodiment of the present disclosure;
fig. 7 shows a schematic view of a side insulating layer of a light emitting device in an embodiment of the present disclosure;
FIG. 8 shows a schematic view of an opening in an insulating layer of a light emitting device in an embodiment of the present disclosure;
fig. 9 shows a schematic view of the structure of each layer of the light emitting device in the embodiment of the present disclosure;
FIG. 10 shows a schematic diagram of a common electrode of a light emitting device in an embodiment of the present disclosure;
fig. 11 shows a schematic structural diagram of a display device in an embodiment of the present disclosure.
Detailed Description
So that the manner in which the features and elements of the disclosed embodiments can be understood in detail, a more particular description of the disclosed embodiments, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the appended drawings. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, at least one embodiment may be practiced without these specific details. In other instances, well-known structures and devices may be shown in simplified form in order to simplify the drawing.
Fig. 1 shows a schematic view of a structure of a light emitting device in an embodiment of the present disclosure.
As shown, the disclosed embodiments provide a light emitting device, which may include:
at least two semiconductor light emitting layers 102; at least one first semiconductor layer 101 and at least one second semiconductor layer 103 are correspondingly arranged on two sides of each semiconductor light emitting layer respectively;
wherein the at least two semiconductor light emitting layers 102 are stacked; the first semiconductor layer 101 corresponding to at least one semiconductor light emitting layer 102 of the at least two semiconductor light emitting layers 102 leads out one electrode to the backlight side of the light emitting device, and the second semiconductor layer 103 leads out the other electrode to the light emitting side of the light emitting device.
In some embodiments, the at least two semiconductor light emitting layers 102 may include two semiconductor light emitting layers, three semiconductor light emitting layers, or more semiconductor light emitting layers, which may be stacked.
In some embodiments, the semiconductor light emitting layer 102 may include at least one of:
an active layer; and a quantum well layer.
In some embodiments, the semiconductor light emitting layer 102 and the first and second semiconductor layers 101 and 103 may constitute at least one of:
light emitting diode LED, Mini light emitting diode Mini LED, Micro light emitting diode Micro LED.
In some embodiments, the device type formed by the semiconductor light emitting layer 102 and the first and second semiconductor layers 101 and 103 may be determined according to practical situations such as process requirements, for example: LED, Mini LED, Micro LED or other light emitting device.
In some embodiments, the first semiconductor layer 101 and the second semiconductor layer 103 may sandwich the semiconductor light emitting layer 102 like a sandwich. Alternatively, the light emitting device of the embodiment of the present disclosure may form a sequentially stacked structure of one first semiconductor layer 101, one semiconductor light emitting layer 102, one second semiconductor layer 103, one first semiconductor layer 101, one semiconductor light emitting layer 102, and one second semiconductor layer 103, and then package the sequentially stacked overall structure as one pixel unit.
In some embodiments, the step of leading out an electrode from the first semiconductor layer corresponding to at least one semiconductor light emitting layer 102 to the backlight side of the light emitting device and another electrode from the second semiconductor layer to the light emitting side of the light emitting device may include:
at least the first semiconductor layer 101 corresponding to part of the semiconductor light emitting layer 102 leads out an electrode to the backlight side of the light emitting device, the second semiconductor layer 103 leads out another electrode to the light emitting side of the light emitting device, and the first semiconductor layer 101 and the second semiconductor layer 103 corresponding to other semiconductor light emitting layers 102 lead out two electrodes to the same side (backlight side or light emitting side); for example: assuming that three layers are stacked, wherein the first semiconductor layer and the second semiconductor layer corresponding to two semiconductor light emitting layers respectively lead electrodes to the light emitting side and the backlight side, and the first semiconductor layer and the second semiconductor layer corresponding to the other semiconductor light emitting layer lead two electrodes to the same side (the backlight side or the light emitting side);
alternatively, the first and second electrodes may be,
all or all of the first semiconductor layers 101 corresponding to the semiconductor light emitting layers 102 lead one electrode to the backlight side of the light emitting device, and the second semiconductor layers 103 lead the other electrode to the light emitting side of the light emitting device.
In some embodiments, the first semiconductor layer 101 is a P-type semiconductor layer or an N-type semiconductor layer, and the second semiconductor layer is an N-type semiconductor layer or a P-type semiconductor layer.
In some embodiments, the electrodes may include P electrodes or N electrodes.
In some embodiments, an insulating layer or direct contact is disposed between the first semiconductor layer 101 or the second semiconductor layer 103 corresponding to one semiconductor light emitting layer 102 and the first semiconductor layer 101 or the second semiconductor layer 103 of the adjacent other semiconductor light emitting layer 102. Alternatively, there is no electrode between the first semiconductor layer 101 or the second semiconductor layer 103 corresponding to one semiconductor light emitting layer 102 and the adjacent first semiconductor layer 101 or the second semiconductor layer 103 of the other semiconductor light emitting layer 102, and either electrode may be disposed in a region other than the orthographic projection overlapping of the two semiconductor light emitting layers.
According to the light-emitting device provided by the embodiment of the disclosure, the semiconductor light-emitting layers are stacked, so that the thickness of the light-emitting device is increased, the light-emitting device is not easy to break, and the service life of the light-emitting device can be prolonged to a certain extent.
In some embodiments, at least one of the first semiconductor layer 101 and the second semiconductor layer 103 corresponding to each semiconductor light emitting layer 102 includes a contiguous face; a stacked arrangement, which may include:
the adjacent surface of one semiconductor light emitting layer 102 and the adjacent surface of the other semiconductor light emitting layer 102 in the two adjacent semiconductor light emitting layers 102 are partially or completely overlapped to form an overlapping area C.
In some embodiments, the adjacent surface corresponding to the semiconductor light emitting layer 102 may be disposed on the outer surface of the first semiconductor layer 101 corresponding to the semiconductor light emitting layer or on the outer surface of the second semiconductor layer 103 corresponding to the semiconductor light emitting layer 102.
Fig. 2, 3, 4, and 5 show schematic diagrams of overlapping regions of light emitting devices in embodiments of the present disclosure.
As shown in the figure, the portion marked by the thick black line is an overlapping region C, one surface of one semiconductor light emitting layer 102 facing to the other adjacent semiconductor light emitting layer 102 in the two adjacent semiconductor light emitting layers 102 is an adjacent surface, the adjacent surfaces of the two semiconductor light emitting layers 102 may be partially or completely overlapped, and the overlapped region is the overlapping region C.
In some embodiments, the shape of the overlap region C may be a regular shape or an irregular shape from a light extraction perspective or a backlight perspective.
In some embodiments, the overlapping region C may be the entire area of the adjacent surface corresponding to one semiconductor light emitting layer 102 of the two adjacent semiconductor light emitting layers 102, and the entire area of the adjacent surface corresponding to the other semiconductor light emitting layer 102, as shown in fig. 2.
In some embodiments, the overlapping region C may be a partial region of an adjacent surface of one semiconductor light emitting layer 102 of the two adjacent semiconductor light emitting layers 102, and a partial region of an adjacent surface of the other semiconductor light emitting layer 102, as shown in fig. 3.
In some embodiments, the overlapping region C may be a partial region of the adjacent surface of one semiconductor light emitting layer 102 of the two adjacent semiconductor light emitting layers 102 and an entire region of the adjacent surface of the other semiconductor light emitting layer 102, as shown in fig. 4 or fig. 5.
In some embodiments, the partial region may be non-contacting either end of the abutment surface (as shown in fig. 4), or the partial region may comprise at least one end of the abutment surface (as shown in fig. 5).
In some embodiments, the overlapping region C of the at least one semiconductor light emitting layer 102 may wholly or partially emit light emitted by the semiconductor light emitting layer 102, or the overlapping region C of the at least one semiconductor light emitting layer 102 may not emit light emitted by the semiconductor light emitting layer 102.
Alternatively, the overlapping region C of the semiconductor light emitting layer 102 may entirely emit light emitted by the semiconductor light emitting layer 102, may partially emit light emitted by the semiconductor light emitting layer 102, or may not emit light emitted by the semiconductor light emitting layer 102. The overlap region C may include at least one light-transmitting region and at least one non-light-transmitting region when light emitted from the semiconductor light emitting layer 102 is partially emitted, and the light-transmitting region and the non-light-transmitting region may be alternately disposed, for example: the light-transmitting area 1, the non-light-transmitting area 1, the light-transmitting area 2 and the non-light-transmitting area 2 are sequentially arranged.
In some embodiments, the semiconductor light emitting layer 102 near the light exit side of the light emitting device may be configured to transmit light emitted from the semiconductor light emitting layer 102 away from the light exit side of the light emitting device.
Fig. 6 shows a schematic view of a reflective layer of a light emitting device in an embodiment of the present disclosure.
As shown, in some embodiments, at least one semiconductor light emitting layer 102 may be provided with a reflective layer F on a side away from the light exit side of the light emitting device, which may be configured to reflect light emitted by the semiconductor light emitting layer 102.
Alternatively, each semiconductor light emitting layer 102 may be provided with a reflective layer F on a side away from the light emitting side of the light emitting device, and the reflective layer F of each semiconductor light emitting layer 102 may reflect light emitted from the semiconductor light emitting layer 102, thereby facilitating light emitted from the semiconductor light emitting layer 102 to be emitted to the light emitting side of the light emitting device.
In some embodiments, the reflective layer F may include at least one of:
a distributed Bragg reflection DBR layer; a metal reflective layer.
Alternatively, the metal reflective layer may be made of a metal material such as copper, aluminum, or silver, or a combination of two or more metal materials.
Fig. 7 shows a schematic view of a side insulating layer of a light emitting device in an embodiment of the present disclosure.
As shown, in some embodiments, the light emitting device may further include:
and an insulating layer I covering a side surface of at least one of the semiconductor light emitting layer 102, the first semiconductor layer 101, and the second semiconductor layer 103.
In some embodiments, the insulating layer I may cover the entire area or a partial area of the side surface of at least one of the semiconductor light emitting layer 102, the first semiconductor layer 101, and the second semiconductor layer 103.
Alternatively, the insulating layer I may be made of an insulating material such as silicon nitride Si3N4 or silicon oxide SiO2, an insulating light-reflecting material or an insulating light-absorbing material, or a combination of an insulating material and a reflecting material, or an insulating material and an absorbing material.
Fig. 8 shows a schematic view of an opening of an insulating layer of a light emitting device in an embodiment of the present disclosure.
As shown, in some embodiments, the insulating layer I may include an opening for extracting an electrode.
Alternatively, the direction of the opening may be parallel to the plane of the overlapping area C (the opening faces to the left as shown in fig. 8), or perpendicular to the plane of the overlapping area C (the opening faces downward, not shown).
In some embodiments, the first semiconductor layer 101 corresponding to all the semiconductor light emitting layers 102 in the at least two semiconductor light emitting layers 102 leads out one electrode to the backlight side, and the second semiconductor layer 103 leads out the other electrode to the light emitting side.
In some embodiments, the electrodes of the first semiconductor layers 101 extracted to the backlight side and the electrodes of the second semiconductor layers 103 extracted to the light-emitting side are the same for different semiconductor light-emitting layers 102 in the at least two semiconductor light-emitting layers 102.
In one embodiment, the electrodes being identical may include the electrodes being of the same polarity.
Optionally, the P-type semiconductor layers corresponding to all the semiconductor light emitting layers 102 lead out the P-electrodes to the backlight side, and the N-type semiconductor layers lead out the N-electrodes to the light emitting side; alternatively, all the N-type semiconductor layers corresponding to the semiconductor light emitting layer 102 lead out the N-electrode to the backlight side, and the P-type semiconductor layers lead out the P-electrode to the light emitting side.
In some embodiments, the first semiconductor layer 101 corresponding to each semiconductor light emitting layer 102 is close to the light emitting side, or the second semiconductor layer 103 corresponding to each semiconductor light emitting layer 102 is close to the light emitting side.
In some embodiments, an insulating layer is disposed between the first semiconductor layer 101 corresponding to one semiconductor light emitting layer 102 and the second semiconductor layer 103 of the other semiconductor light emitting layer 102 in the two adjacent semiconductor light emitting layers 102.
Fig. 9 shows a schematic view of each layer structure of a light emitting device in the embodiment of the present disclosure.
As shown, in some embodiments, a light emitting device includes a plurality of light emitting structures disposed in a stack, each of which may include a P-type semiconductor layer, an active layer (or quantum well layer), and an N-type semiconductor layer, which may be configured to extract a P-electrode, and an N-type semiconductor layer, which may be configured to extract an N-electrode, sequentially disposed.
In some embodiments, the N-type semiconductor layers of each light emitting structure may be adjacent to the light emitting side, or the P-type semiconductor layers of each light emitting structure may be adjacent to the light emitting side.
As shown in fig. 9, the N-type semiconductor layer of each light emitting structure is close to the light emitting side.
An insulating layer may be disposed between the N-type semiconductor layer of one of the two adjacent light emitting structures and the P-type semiconductor layer of the other light emitting structure.
In some embodiments, the first electrodes corresponding to different semiconductor light emitting layers 102 are independently wired, and the second electrodes corresponding to different semiconductor light emitting layers 102 are shared.
Fig. 10 shows a schematic diagram of a common electrode of a light emitting device in an embodiment of the present disclosure.
As shown in the figure, the P-type semiconductor layer of each light-emitting structure leads out a P electrode, and the N-type semiconductor layer shares one N electrode. The light emitting structure may be a stack of two layers of light emitting structures, or a stack of three layers of light emitting structures.
In some embodiments, the at least two semiconductor light emitting layers 102 may include: the plurality of semiconductor light emitting layers 102, which are sequentially stacked toward the light emitting side of the light emitting device, emit color light of different wavelengths, respectively.
In some embodiments, the wavelengths of light emitted from the plurality of semiconductor light emitting layers 102 sequentially stacked toward the light exit side are sequentially decreased.
In some embodiments, at least two semiconductor light emitting layers 102, include: three semiconductor light emitting layers 102, which are sequentially stacked toward a direction near a light emitting side of the light emitting device, emit red light, green light, and blue light, respectively.
In some embodiments, it is also possible to stack four semiconductor light emitting layers 102, and each semiconductor light emitting layer 102 emits red, green, blue, yellow, and the like, which are not shown in the embodiments of the present disclosure.
In some embodiments, the electrode extracted from the light exit side of the light emitting device may be a light transmissive electrode.
Alternatively, the light-transmitting electrode can be made of Indium Tin Oxide (ITO), conductive polymer PEDOT, nano silver wire, graphene and the like.
In some embodiments, the light emitting device may further include:
and the at least one semiconductor light emitting layer is arranged in a direction different from the stacking direction of the at least two stacked semiconductor light emitting layers.
In some embodiments, the at least one semiconductor light emitting layer is disposed in a direction perpendicular to a stacking direction of the at least two semiconductor light emitting layers (which may be parallel to a light emitting direction of the light emitting device).
In some embodiments, the at least one semiconductor light emitting layer and the at least two semiconductor light emitting layers are spaced apart in a direction perpendicular to a light extraction direction of the light emitting device.
Alternatively, in the direction perpendicular to the light emitting direction, the stacked semiconductor light emitting layers and the non-stacked semiconductor light emitting layers may be sequentially arranged at intervals, for example: stacked semiconductor light emitting layers, non-stacked semiconductor light emitting layers, non-stacked semiconductor light emitting layers.
Alternatively, three stacked semiconductor light emitting layers, one semiconductor light emitting layer, three stacked semiconductor light emitting layers, one semiconductor light emitting layer are disposed in sequence in a direction perpendicular to a light emitting direction, and each color emitted by the semiconductor light emitting layers not stacked with the other semiconductor light emitting layers may be the same or different.
In some embodiments, the semiconductor light emitting layers arranged in a stack have a thickness, and a layer of the semiconductor light emitting layer arranged in parallel with the layer of the semiconductor light emitting layer arranged in a direction perpendicular to the light emitting direction can be coplanar with any one of the semiconductor light emitting layers arranged in a stack.
In some embodiments, at least one of the following locations may be provided with an optical isolation structure:
between two adjacent at least one semiconductor light emitting layer;
between two adjacent at least two semiconductor light emitting layers;
the at least one adjacent semiconductor light emitting layer and the at least two adjacent semiconductor light emitting layers.
Fig. 11 shows a schematic structural diagram of a display device in an embodiment of the present disclosure.
As shown in the figures, the disclosed embodiments provide a display device comprising: a light emitting device as described above.
In some embodiments, the display apparatus may include one, two or more of the light emitting devices.
In some embodiments, an optical isolation structure 22 may be disposed between at least two light emitting devices.
The optical isolation structure 22 can prevent light emitted from adjacent light emitting devices from being transmitted in an undesired direction, which is advantageous for improving display effect.
In some embodiments, the optical isolation structure 22 may be disposed in some or all of the region between two adjacent light emitting devices.
In some embodiments, the optical isolation structure 22 may be a single unitary closed structure, or may include an isolation body and a spacer structure disposed between the isolation body and the light emitting device.
In some embodiments, the optical isolation structure 22 may include at least one of a light absorbing material, a light reflecting material.
In some embodiments, some or all of the cross-sectional shape of the optical isolation structure 22 in the light exit direction may include at least one of a right-angled quadrilateral, a triangle, a trapezoid, and a circle.
In some embodiments, the position, shape, size, etc. of the optical isolation structure 22 between two adjacent light emitting devices can be determined according to practical conditions such as process requirements.
In some embodiments, the display device may also include other components for supporting the normal operation of the display, such as: at least one of display screen, communication interface, frame, control circuit, etc.
The above description and drawings sufficiently illustrate embodiments of the disclosure to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The scope of the disclosed embodiments includes the full ambit of the claims, as well as all available equivalents of the claims. As used in this application, although the terms "first," "second," etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, unless the meaning of the description changes, so long as all occurrences of the "first element" are renamed consistently and all occurrences of the "second element" are renamed consistently. The first and second elements are both elements, but may not be the same element. Furthermore, the words used in the specification are words of description only and are not intended to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Similarly, the term "and/or" as used in this application is meant to encompass any and all possible combinations of one or more of the associated listed. Furthermore, the terms "comprises" and/or "comprising," when used in this application, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Without further limitation, an element defined by the phrase "comprising an …" does not exclude the presence of other like elements in a process, method or apparatus that comprises the element. In this document, each embodiment may be described with emphasis on differences from other embodiments, and the same and similar parts between the respective embodiments may be referred to each other. For methods, products, etc. of the embodiment disclosures, reference may be made to the description of the method section for relevance if it corresponds to the method section of the embodiment disclosure.
Those of skill in the art would appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software may depend upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the disclosed embodiments. It is clear to those skilled in the art that, for convenience and brevity of description, the working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the embodiments disclosed herein, the disclosed methods, products (including but not limited to devices, apparatuses, etc.) may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of a unit may be merely a division of a logical function, and an actual implementation may have another division, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form. Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to implement the present embodiment. In addition, functional units in the embodiments of the present disclosure may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
In the drawings, the width, length, thickness, etc. of structures such as elements or layers may be exaggerated for clarity and descriptive purposes. When an element or layer is referred to as being "disposed on" (or "mounted on," "laid on," "attached to," "coated on," or the like) another element or layer, the element or layer may be directly "disposed on" or "over" the other element or layer, or intervening elements or layers may be present, or even partially embedded in the other element or layer.
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to embodiments of the present disclosure. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises at least one executable instruction for implementing the specified logical function(s). In some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. In the description corresponding to the flowcharts and block diagrams in the figures, operations or steps corresponding to different blocks may also occur in different orders than disclosed in the description, and sometimes there is no specific order between the different operations or steps. For example, two sequential operations or steps may in fact be executed substantially concurrently, or they may sometimes be executed in the reverse order, depending upon the functionality involved. Each block of the block diagrams and/or flowchart illustrations, and combinations of blocks in the block diagrams and/or flowchart illustrations, can be implemented by special purpose hardware-based systems that perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
Claims (18)
1. A light emitting device, comprising:
at least two semiconductor light emitting layers; at least one first semiconductor layer and at least one second semiconductor layer are correspondingly arranged on two sides of each semiconductor light emitting layer respectively;
wherein the at least two semiconductor light emitting layers are stacked; and the first semiconductor layer corresponding to at least one semiconductor light-emitting layer in the at least two semiconductor light-emitting layers leads out an electrode to the backlight side of the light-emitting device, and the second semiconductor layer leads out another electrode to the light-emitting side of the light-emitting device.
2. The light-emitting device according to claim 1, further comprising:
and an insulating layer covering a side surface of at least one of the semiconductor light emitting layer, the first semiconductor layer, and the second semiconductor layer.
3. The light-emitting device according to claim 2, wherein the insulating layer includes an opening for extracting an electrode.
4. The light-emitting device according to claim 1, wherein the first semiconductor layers corresponding to all the at least two semiconductor light-emitting layers respectively lead out one electrode to the backlight side, and the second semiconductor layers respectively lead out the other electrode to the light-emitting side.
5. The light-emitting device according to claim 1, wherein electrodes of the first semiconductor layers corresponding to different semiconductor light-emitting layers of the at least two semiconductor light-emitting layers, which are led out to the backlight side, are the same, and electrodes of the second semiconductor layers, which are led out to the light-emitting side, are the same.
6. The light-emitting device according to claim 1, wherein the first semiconductor layer corresponding to each semiconductor light-emitting layer is close to the light-emitting side, or the second semiconductor layer corresponding to each semiconductor light-emitting layer is close to the light-emitting side.
7. The light-emitting device according to claim 6, wherein an insulating layer is provided between a first semiconductor layer corresponding to one of the two adjacent semiconductor light-emitting layers and a second semiconductor layer of the other semiconductor light-emitting layer.
8. The light-emitting device according to claim 1, wherein the first electrodes corresponding to different semiconductor light-emitting layers are independently wired, and the second electrodes corresponding to different semiconductor light-emitting layers are commonly wired.
9. A light-emitting device according to claim 1, wherein the electrode extracted from the light-exit side of the light-emitting device is a light-transmitting electrode.
10. A light emitting device according to any of claims 1 to 9, wherein the at least two semiconductor light emitting layers comprise: the light emitting devices include a plurality of semiconductor light emitting layers stacked in sequence in a direction close to a light emitting side of the light emitting device, and emit color lights of different wavelengths, respectively.
11. The light-emitting device according to claim 10, wherein wavelengths of light emitted from the plurality of semiconductor light-emitting layers sequentially stacked in a direction close to the light-emitting side are sequentially decreased.
12. The light-emitting device of claim 10, wherein the at least two semiconductor light-emitting layers comprise: three semiconductor light emitting layers sequentially stacked toward a direction near a light emitting side of the light emitting device emit red light, green light, and blue light, respectively.
13. The light-emitting device according to any one of claims 1 to 9, further comprising:
and the at least one semiconductor light emitting layer is arranged in a direction different from the stacking direction of the at least two stacked semiconductor light emitting layers.
14. The light-emitting device according to claim 13, wherein the at least one semiconductor light-emitting layer is provided in a direction perpendicular to a stacking direction of the at least two semiconductor light-emitting layers.
15. The light-emitting device according to claim 13, wherein the at least one semiconductor light-emitting layer and the at least two semiconductor light-emitting layers are spaced apart in a direction perpendicular to a light-emitting direction of the light-emitting device.
16. A light emitting device as claimed in claim 13, wherein at least one of the following locations is provided with an optical isolation structure:
two adjacent at least one semiconductor light emitting layer;
two adjacent at least two semiconductor light emitting layers;
the at least one adjacent semiconductor light emitting layer and the at least two adjacent semiconductor light emitting layers.
17. A display device characterized by comprising the light-emitting device according to any one of claims 1 to 16.
18. The display device according to claim 17, wherein an optical isolation structure is provided between at least two of the light emitting devices.
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