WO2022197132A1 - 다이아몬드 디스크 및 그 제조 방법 - Google Patents

다이아몬드 디스크 및 그 제조 방법 Download PDF

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WO2022197132A1
WO2022197132A1 PCT/KR2022/003778 KR2022003778W WO2022197132A1 WO 2022197132 A1 WO2022197132 A1 WO 2022197132A1 KR 2022003778 W KR2022003778 W KR 2022003778W WO 2022197132 A1 WO2022197132 A1 WO 2022197132A1
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Prior art keywords
boron
diamond
doped
bonding layer
doped diamond
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PCT/KR2022/003778
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English (en)
French (fr)
Korean (ko)
Inventor
박희동
곽경국
이세광
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이화다이아몬드공업주식회사
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Priority claimed from KR1020220033016A external-priority patent/KR20220130041A/ko
Application filed by 이화다이아몬드공업주식회사 filed Critical 이화다이아몬드공업주식회사
Priority to CN202280021491.0A priority Critical patent/CN117083153A/zh
Priority to EP22771798.0A priority patent/EP4296000A1/en
Priority to JP2023557059A priority patent/JP2024511030A/ja
Priority to US18/282,287 priority patent/US20240173823A1/en
Publication of WO2022197132A1 publication Critical patent/WO2022197132A1/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0072—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using adhesives for bonding abrasive particles or grinding elements to a support, e.g. by gluing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00—Tool surfaces formed with a pattern

Definitions

  • the present invention relates to a diamond disk and a method for manufacturing the same.
  • a chemical mechanical polishing (CMP) process is a chemical-mechanical polishing process, which is a polishing process in which a semiconductor wafer is flattened by simultaneously using a polishing removal process and a dissolution action of a chemical solution.
  • the principle of CMP polishing processing consists of supplying a polishing liquid mixed with abrasive particles and chemical liquid onto the polishing pad while moving them relative to each other in a state where the polishing pad and the wafer are pressed together. Numerous foam pores on the surface of the pad serve to contain the new polishing liquid, so that uniform polishing efficiency and polishing uniformity can be obtained on the entire surface of the wafer.
  • the CMP pad conditioner is used to finely polish the surface of the polishing pad to form new micropores.
  • the CMP pad conditioning operation can be performed concurrently with the main CMP operation to increase productivity. This is called in-situ conditioning.
  • the polishing liquid used for the CMP operation includes abrasive particles such as silica, alumina, or ceria, and the CMP process is largely divided into oxide CMP and metal CMP according to the type of polishing liquid used.
  • the polishing liquid for oxide CMP used in the former has a pH value of 10 to 12, and the pH of the polishing liquid for metal CMP used in the latter is 4 or less, so an acidic solution is used.
  • a typical conventional CMP pad conditioner is an electrodeposition type CMP pad conditioner manufactured by an electrodeposition method and a fusion type CMP pad conditioner which is a method of melting metal powder at a high temperature are used.
  • granular diamond particles are mainly used as abrasives. Diamond particles are fixed by a metal matrix formed by electrodeposition or fusion.
  • Diamond is known as the material with the highest hardness among materials existing on the earth, and diamond tools manufactured using artificial diamond as a material are manufactured and used due to these characteristics.
  • Patent Document Domestic Patent Publication No. 10-2012-0058303
  • SUMMARY Embodiments of the present invention are intended to provide a diamond disk having improved wear resistance and high grinding performance and a method for manufacturing the same.
  • BDDs boron doped diamonds
  • the long axis of the boron-doped diamond may have an attitude of greater than 50° and less than or equal to 90° with respect to the shank base, and the boron-doped diamond may be disposed on the bonding layer.
  • a wetting angle between the surface of the bonding layer and the surface of the boron-doped diamond may be maintained at 0° or more and 60° or less.
  • a ratio of the thickness of the bonding layer to the average diameter of the boron-doped diamond may be in the range of 30% to 65%.
  • the doping amount of boron doped into the boron-doped diamond may be in the range of 1 ppm to 2000 ppm.
  • the magnetic susceptibility per unit volume of the boron-doped diamond may be in the range of 20 to 800 per unit volume.
  • a ratio of the density of the boron-doped diamond to the density of the bonding layer may be maintained in a range of 0.4 to 0.6.
  • the boron-doped diamond is an octahedron diamond, and the lower end of the boron-doped diamond is in point or line contact with the surface of the shank base when the boron-doped diamond stands on top of the bonding layer. or may be spaced apart from each other by a predetermined distance.
  • the pad polishing characteristics (PCR: Pad cut rate) by the boron-doped diamond
  • the CMP pad conditioner made of the boron-doped diamond is rotated at 100 rpm 120 rpm, and the polishing pad is 80 rpm to 95 rpm
  • the CMP Pad conditioner made of boron-doped diamond pressurizes the polishing pad at 4.5 to 9 lbf, and it may take 13 hours or more until the PCR is lowered to the range of 2 to 10 ⁇ m/hr for pad conditioning.
  • BDD boron doped diamonds
  • Heat treatment in a second temperature range A method for manufacturing a diamond disk including a heat treatment step may be provided.
  • the long axis of the boron-doped diamond may be exposed to the bonding layer in an attitude of greater than 50° and less than or equal to 90° with respect to the shank base.
  • the first temperature range may be 600°C to 900°C
  • the second temperature range in the heat treatment step may be 1000°C to 1300°C.
  • a wetting angle between the surface of the bonding layer and the surface of the boron-doped diamond may be maintained at 0° or more and 60° or less.
  • the ratio of the thickness of the bonding layer after heat treatment to the average diameter of the boron-doped diamond may be in the range of 30% to 65%.
  • it is an octahedral boron doped diamond (BDD), and the self-standing ratio of the boron doped diamond is higher than a certain ratio, thereby improving wear resistance and grinding performance can be improved.
  • BDD octahedral boron doped diamond
  • FIG. 1 is a diagram illustrating a state in which boron-doped diamond (BDD) is temporarily attached on a bonding layer in the form of a pre-sintered body in a diamond disk according to an embodiment of the present invention.
  • BDD boron-doped diamond
  • FIG. 2 is a diagram illustrating a state in which boron-doped diamond (BDD) is erected on a bonding layer after heat treatment in a diamond disk according to an embodiment of the present invention.
  • BDD boron-doped diamond
  • FIG 3 is a diagram illustrating a state in which boron-doped diamond (BDD) is wetted on a bonding layer after heat treatment in a diamond disk according to an embodiment of the present invention.
  • BDD boron-doped diamond
  • 4 to 5 are photographs comparing the wear state of a diamond disk and a normal diamond according to an embodiment of the present invention.
  • FIG. 6 is an enlarged comparison view of a diamond disk to which boron-doped diamond (BDD) is applied and a diamond disk to which a normal octahedral diamond not doped with boron is applied, according to an embodiment of the present invention.
  • BDD boron-doped diamond
  • FIG. 7 is a graph showing a PCR test between boron-doped diamond (BDD) and a diamond disk to which general octahedral diamond is applied according to an embodiment of the present invention.
  • BDD boron-doped diamond
  • BDD boron-doped diamond
  • FIG. 9 is a block diagram illustrating a method of manufacturing a diamond disk according to an embodiment of the present invention.
  • nickel electroplating is used as a bonding layer to support diamond as a non-conductor.
  • BDD boron doped diamond
  • the nickel electrodeposition layer is covered up to the surface of the boron doped diamond during electroplating. Therefore, boron doped diamond (BDD: Boron Doped Diamond) can be applied when manufacturing a diamond disc (diamond disc) by a fusion method and a sintering method.
  • BDD boron-doped diamond
  • CBN cubic boron nitride
  • boron-doped diamond In the case of boron-doped diamond according to the present invention, Fe, Ni alloy and boron (Pure boron or Boron carbide) are catalysts, and in diamond synthesis, boron is substituted with carbon, or boron is in the diamond structure. can be invaded. This boron-doped diamond suppresses the reaction between external iron (Fe) and carbon of the diamond, thereby providing all the characteristics of diamond resistant to wear.
  • boron doped diamond may be used in 5 vol% or more of the total diamond depending on the intended use. And, in boron-doped diamond (BDD), the octahedral structure ratio may be 50% or more. A proportion of the boron-doped diamond (BDD) that is self-standing in the bonding layer among the total boron-doped diamond (BDD) may be 60% or more.
  • the ratio can be determined by observing all diamonds in a certain area, and among them, the ratio of diamonds satisfying the above criteria.
  • FIGS. 1 to 8 a detailed configuration of a diamond disk according to an embodiment of the present invention will be described with reference to FIGS. 1 to 8 .
  • the diamond disk according to the present invention may be applied to a CMP pad conditioner to finely polish the surface of the polishing pad.
  • the diamond disk may include a shank base 100 , a bonding layer 200 , and a plurality of boron doped diamonds 300 ( BDD: Boron Doped Diamond).
  • the shank base 100 is a backing plate of a disk, and a bonding layer 200 may be formed on the surface of the shank base 100 . Since the shank base 100 corresponds to the conventional shank base 100 used as a backing plate of the disk, a detailed description thereof will be omitted.
  • the bonding layer 200 contains 60 wt% or more of Ni, and may be formed of a bonding material containing other elements such as Cr and Si. After the bonding material is applied to the surface of the shank base 100 , it may be dried and pre-sintered to form a solid phase pre-sintered body. An adhesive for temporarily attaching the boron-doped diamond 300 may be applied to the upper surface of the pre-sintered body. The boron-doped diamond 300 may be temporarily attached to the upper surface of the pre-sintered body to which the adhesive is applied using a perforation jig.
  • the pre-sintered body may be formed into the bonding layer 200 through a heat treatment process together with the boron-doped diamond 300 .
  • the bonding layer 200 may be phase-changed to a liquid state during a high-temperature heat treatment process, and the boron-doped diamond 300 may be disposed on the bonding layer 200 in a standing state.
  • the bonding layer 200 on which the boron-doped diamond 300 is disposed in a standing state may be cooled and dried.
  • the density of the bonding layer 200 is 6 g/cm 3 to 8.3 g/cm 3 can be a range.
  • the density of the boron-doped diamond 300 may be in the range of 3.5 g/cm 3 to 3.6 g/cm 3 .
  • the density of the bonding layer 200 is 7.6 g/cm 3
  • the density of the boron-doped diamond 300 is 3,54 g/cm 3 .
  • the ratio of the density of the boron-doped diamond 300 to the density of the bonding layer 200 may be in the range of 0.4 to 0.6. If the ratio of the density of the boron-doped diamond 300 to the density of the bonding layer 200 is higher than 0.6, the buoyancy of the boron-doped diamond 300 due to the density difference between the bonding layer 200 and the boron-doped diamond 300 is Since it is too low, the boron-doped diamond 300 may be immersed into the bonding layer 200 .
  • the ratio of the density of the boron-doped diamond 300 to the density of the bonding layer 200 is lower than 0.4, the buoyancy force of the boron-doped diamond 300 due to the density difference between the bonding layer 200 and the boron-doped diamond 300 Since this becomes too large, the boron-doped diamond 300 may float on the upper surface of the bonding layer 200 and may be inclined in the horizontal direction.
  • the boron-doped diamond 300 may be configured by including Fe, a Ni alloy, and boron (Pure boron or Boron carbide) in carbon as a catalyst.
  • Fe, a Ni alloy, and boron Pure boron or Boron carbide
  • boron Purge boron or Boron carbide
  • Fe, a Ni alloy, and 1 ppm to 2000 ppm of boron may be included in carbon.
  • boron may be substituted with carbon, or boron may be invaded into the diamond structure.
  • the boron-doped diamond 300 may provide strong wear resistance while not reacting with external iron (Fe).
  • the boron-doped diamond 300 may have a Toughness Index (TI) of 20 to 50, and a Temperature Toughness Index (TTI) of 14 to 45.
  • the magnetic susceptibility (MS) per unit volume of the boron-doped diamond 300 may be 20 to 800, more preferably 30 to 500.
  • Fe, Ni, etc. used as catalysts in the synthesis process of boron-doped diamond 300 are included as foreign substances in the diamond.
  • the doping amount of boron increases, the amount of foreign substances increases proportionally. If the MS value is less than 20, the boron doping amount is also very small, and the effect of improving the corrosion resistance by boron may be reduced. This can be degraded, which can cause the diamond grain breakage during CMP pad conditioning.
  • the TI and TTI values also decrease, which can be seen through MS measurement.
  • the diamond toughness (TI, TTI or MS) must be high enough to not break during prolonged use under pressure under CMP conditions.
  • the boron-doped diamond 300 may be an octahedron diamond.
  • Diamonds can be manufactured in the form of an octahedron depending on the synthesis conditions.
  • the diamond composed of an octahedron has a sharp edge, and in the diamond composed of an octahedron, the angle between the line and the plane connecting the vertex and the center is 35° to 45°.
  • a plurality of such boron-doped diamonds 300 may be provided to be exposed to the bonding layer 200 . At least some of the plurality of boron-doped diamonds 300 may be disposed on the bonding layer 200 at an angle C in which the long axis L is greater than 50° and less than or equal to 90° with respect to the shank base 100 .
  • an imaginary line connecting two vertices farthest apart from each other while facing each other among a plurality of vertices of the diamond 300 may be defined as an 'axis', and among these plurality of 'axes' The longest axis may be defined as a 'long axis (L)'.
  • a 'vertex' may be defined as a point where adjacent edges meet, and when adjacent edges do not meet as a 'point' (for example, when a portion corresponding to a vertex has a blunt shape, adjacent edges
  • An imaginary point where the extended edges meet can be defined as a vertex when they are extended
  • a boron-doped diamond whose long axis is 50° or more can be defined as self-standing.
  • the long axis L of the boron-doped diamond 300 is at an angle C that is greater than 50° and less than or equal to 90° with respect to the shank base 100, and the boron-doped diamond 300 is independent on the upper portion of the bonding layer 200 . It can be understood that the arrangement is to be self-standing. When the boron-doped diamond 300 is self-standing on the upper portion of the bonding layer 200, the lower vertex in the long axis direction of the boron-doped diamond 300 may be in point or line contact with the surface of the shank base 100 or spaced apart by a predetermined distance. can
  • the polishing performance of 300 can be significantly increased.
  • the surface of the boron-doped diamond 300 is The wetting angle ( ⁇ , Wetting angle) where the surface of the bonding layer 200 and the bonding layer 200 meet should be smaller than 90°, and preferably, components of the bonding layer should be configured to be smaller than 60°.
  • the wetting angle ⁇ is the up-down direction of the upward force F V , the downward force F D , and the lateral force F L ). It can be determined by the component.
  • the boron-doped diamond 300 When the wetting angle ( ⁇ ) exceeds 90°, the boron-doped diamond 300 can float more because the vertical component of F L is upward, and when the wetting angle ( ⁇ ) is less than 90°, it is laterally Since the direction of the up-down component of the upward force F L may be changed in the lateral direction, the boron-doped diamond 300 may receive a downward force.
  • the boron-doped diamond 300 may not properly support the boron-doped diamond 300 due to the buoyancy of the boron-doped diamond 300, so that the boron-doped diamond 300 may not fall out. high, and chip pockets for discharging debris generated during polishing are not formed in the bonding layer, so that the discharging of debris is not performed properly, and polishing performance may be remarkably reduced.
  • the wetting angle ⁇ of the octahedral boron-doped diamond 300 is smaller than 60°, the boron-doped diamond 300 comes into point or line contact with the workpiece (polishing pad) and the chip pocket is well formed, The abrasive performance of the boron-doped diamond 300 for the work material may be significantly increased.
  • the wetting angle between the boron-doped diamond 300 and the bonding layer 200 is smaller than 60°, when the thickness of the bonding layer is too thick, the exposure height of the boron-doped diamond 300 in the bonding layer 200 is lowered, , the boron-doped diamond 300 may be in surface contact with the workpiece by floating by buoyancy.
  • the chip pocket for discharging debris generated during polishing by the boron-doped diamond 300 is shallowly formed in the bonding layer 200, the discharge of debris generated during polishing may not be smooth. .
  • the boron-doped diamond 300 when the wetting angle of the boron-doped diamonds 300 and BDD is smaller than 60°, the boron-doped diamond 300 is embedded deeper into the bonding layer 200 by surface tension, so that the boron-doped diamond 300 is bonded. The height protruding from the layer 200 may be lowered. Therefore, the thickness of the bonding layer 200 must be strictly controlled so that a discharge path for debris generated during the polishing of the diamond disk can be secured.
  • the bonding layer 200 when the bonding layer 200 is thinner than an appropriate thickness, self-standing may occur due to buoyancy (difference in density between boron-doped diamond and the bonding layer) and wetting. In this case, the chip pocket is well formed in the bonding layer 200, but when the thickness of the bonding layer 200 is too thin, the boron-doped diamond 300 comes into contact with the shank base 100 and the boron in the downward direction due to the surface tension.
  • the doped diamond 300 may receive more force, and at this time, the boron-doped diamond 300 is tilted, so that the exposure height of the boron-doped diamond 300 in the bonding layer 200 is lowered and the boron-doped diamond 300 ) and the workpiece may come into contact with each other.
  • the diamond is laid down and the long axis of the boron-doped diamond 300 and the shank base 100 are disposed in the bonding layer 200 at an angle C of about 35° to 45°, boron-doped The self-standing ratio of the diamond 300 may be lowered.
  • the thickness of the bonding layer 200 according to the present invention has a certain ratio to the average diamond particle size (diameter).
  • the ratio of the thickness of the bonding layer 200 to the average diameter of the boron-doped diamond 300 according to the present invention may be in the range of 30% to 65%.
  • [Table 2] is a table showing the angle good diamond ratio (self-standing ratio) and PCR (Pad cut rate) for each height of the bonding layer 200 .
  • the particle size of diamond has a certain range of mesh size, and the average size of diamond follows ANSI standard.
  • the diamonds used in [Table 2] are #80 ⁇ #100, with an average size of 150um and a size range of 127 ⁇ 181um.
  • Diamonds are attached at a density of 400 pieces/cm 2 on a disk with a diameter of about 4”. The number of diamonds attached per unit area may vary depending on the average diamond size.
  • the diamond exposure height is relatively high compared to the bonding layer thickness, and the angle good diamond ratio, for example, the self-standing ratio, is the highest.
  • PCR is also the highest.
  • the bonding layer thickness is 106 ⁇ m
  • the diamond exposure height is also relatively low compared to the bonding layer thickness, the angle good diamond ratio (self-standing ratio) is low, and the PCR is low.
  • the bonding layer thickness is 52um
  • the diamond exposure height is relatively high compared to the bonding layer thickness, but the angle good diamond ratio (self-standing ratio) is slightly lowered, and the PCR is also slightly decreased.
  • the ratio of the thickness of the bonding layer 200 to the average diameter of the boron-doped diamond 300 is preferably in the range of 30% to 65%.
  • FIG. 6 shows a cross-sectional photograph of boron-doped octahedral diamond 300 and general octahedral diamond after heat treatment. Even if the normal diamond undoped with boron has an octahedral shape, if the PCR test is performed in the PCR test equipment for 15 minutes, the PCR value of the normal diamond is the PCR value of the boron-doped diamond (300, BDD) under the same conditions. lower compared to A blocky type, that is, a cube-octahedral shaped diamond, shows a very low PCR value in a PCR test under the same conditions as a boron-doped diamond disk, regardless of whether boron-doped or not.
  • PCR test equipment in order to measure PCR (Pad cut rate) according to a long time of a disk made of boron-doped diamond 300 and general octahedral diamond, PCR test equipment, polishing pad, CMP pad conditioner (CMP Pad Conditioner) ), prepare the slurry.
  • CMP pad conditioner CMP Pad Conditioner
  • a CMP polisher manufactured by CTS may be used, an IC1010 ((Dupont) product having a diameter of 20" may be used as a polishing pad, and a slurry W7000 (Cabot microelectronics) may be used.
  • a CMP pad The conditioner may be provided with a diameter of 4′′ boron-doped octahedral diamond 300 and general octahedral diamond.
  • the polishing pad is rotated at 80-95 rpm and the CMP pad conditioner is rotated at 100-120 rpm, boron-doped diamond 300 or ordinary octahedron of the CMP pad conditioner
  • the time the diamond uses the polishing pad under the pressure of 4 to 9 lbf is measured until the PCR is lowered to below the minimum PCR value for pad conditioning. If the PCR value is lower than the set value, the role as a CMP pad conditioner is considered insufficient.
  • the CMP pad conditioner may polish the polishing pad while reciprocating from the center to the edge of the polishing pad 18 to 20 times per minute, and 300 ml of slurry per minute may be provided to the polishing pad.
  • the CMP pad conditioner equipped with ordinary octahedral diamond took 8 hours for PCR to reach 10 ⁇ m/hr, whereas the CMP pad conditioner equipped with boron-doped diamond 300 was It was confirmed that it took 13 hours for PCR to reach 10. In the PCR test described herein, it took 13 hours for the CMP pad conditioner to reach PCR, for example, 10um/hr, but it may also be included in the spirit of the present invention that it takes more than 13 hours.
  • the CMP pad conditioner The longer the time it takes for PCR to reach 10um/hr for the CMP pad conditioner, the more advantageous it is, so there is no need to specify an upper limit for the time required for PCR to reach 10um/hr in the present specification, but the CMP pad conditioner The time taken to reach 10 um/hr may be 100 hours.
  • the boron-doped diamond 300 maintained the pad polishing properties for 30% or longer longer than that of the general octahedral diamond even when the set value was set to, for example, 5 ⁇ m/hr or 2 ⁇ m/hr. .
  • the comparative example is a general octahedral diamond, and a sharp edge is observed before use, but it is observed that the edge is almost worn after 10 hours or 15 hours.
  • the edge of the boron-doped octahedral diamond which is an embodiment, is less worn even after 10 hours and 26 hours of use.
  • the diamond disk according to the present invention can provide all of the characteristics of diamond resistant to wear while having the same characteristics as boron nitride (CBN) that does not react with iron (Fe), thereby improving the life of the diamond disk.
  • CBN boron nitride
  • Fe iron
  • the method for manufacturing a diamond disk according to an embodiment of the present invention includes a bonding material application step (S100), a pre-sintering step (S200), a diamond providing step (S300) and a heat treatment step (S400). can do.
  • a bonding material may be applied to the surface of the shank base.
  • the bonding material may include 60 wt% or more of Ni and other elements such as Cr and Si.
  • a solid phase presintered body may be formed through a presintering process in which the bonding material applied to the surface of the shank base is heated and dried to a first temperature range.
  • the first temperature range may be a temperature range of 600 °C to 900 °C.
  • the ratio of the thickness of the bonding layer after the final heat treatment to the average diameter of the boron-doped diamond may be in the range of 30% to 65%.
  • a plurality of boron doped diamonds may be provided on the surface of the pre-sintered body.
  • the plurality of boron-doped diamonds may be temporarily attached to the pre-sintered body with an adhesive using a perforation jig.
  • a plurality of boron-doped diamonds may be heat-treated in a second temperature range so that they are disposed to be exposed to the pre-sintered body in a standing state. At least some of the plurality of boron-doped diamonds may be self-standing at an angle C in which the major axis L is greater than 60° and less than or equal to 90° with respect to the shank base.
  • the second temperature range may be a temperature range of 1000 °C to 1300 °C.
  • the solid pre-sintered body is phase-changed into a liquid bonding layer. Accordingly, a portion of the individual boron-doped diamond (about 50 vol%) may be exposed on the upper surface of the bonding layer 200 due to buoyancy due to the density difference, and the remaining part (about 50 vol%) of the individual boron-doped diamond is bonded. It can descend below the floor surface.
  • the lower vertex of the boron-doped diamond having an octahedral shape faces downward.
  • rotation of the boron-doped diamond may occur and a self-standing phenomenon may occur.
  • a wetting angle where the surface of the pre-sintered body and the surface of the boron-doped diamond meet may be maintained at 0° or more and 60° or less.
  • the wetting angle is less than 60°, the better the chip pocket formation. can be increased significantly.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/KR2022/003778 2021-03-17 2022-03-17 다이아몬드 디스크 및 그 제조 방법 WO2022197132A1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202280021491.0A CN117083153A (zh) 2021-03-17 2022-03-17 钻石盘及其制造方法
EP22771798.0A EP4296000A1 (en) 2021-03-17 2022-03-17 Diamond disc and method for manufacturing same
JP2023557059A JP2024511030A (ja) 2021-03-17 2022-03-17 ダイヤモンドディスク及びその製造方法
US18/282,287 US20240173823A1 (en) 2021-03-17 2022-03-17 Diamond disc and method for manufacturing same

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KR20070032067A (ko) * 2004-07-26 2007-03-20 인텔 코포레이션 반도체 웨이퍼를 연마하기 위한 조절 조립체 및 방법
US20090325471A1 (en) * 2008-06-25 2009-12-31 Kink Company Diamond polishing disk and manufacturing method thereof
KR20100030475A (ko) * 2008-09-10 2010-03-18 이화다이아몬드공업 주식회사 연마공구 및 그 제조방법
JP2012086291A (ja) * 2010-10-18 2012-05-10 Disco Corp 切削砥石
KR20120058303A (ko) 2010-11-29 2012-06-07 이화다이아몬드공업 주식회사 Ｃｍｐ 패드용 고기능성컨디셔너 제조방법 및 그 방법으로 제조된 고기능성 패드컨디셔너

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TWM370179U (en) * 2009-07-20 2009-12-01 Diamondfacing Nanotechnology & Associate Co Precision lapping tool
CN106926148B (zh) * 2017-02-08 2020-07-14 上海交通大学 利用化学气相沉积制备单层金刚石磨料工具的方法

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KR20070032067A (ko) * 2004-07-26 2007-03-20 인텔 코포레이션 반도체 웨이퍼를 연마하기 위한 조절 조립체 및 방법
JP2006176698A (ja) * 2004-12-24 2006-07-06 Utsunomiya Univ 磁性砥粒、その製造方法、無電解めっき方法及び活性炭用無電解めっき活性化剤
US20090325471A1 (en) * 2008-06-25 2009-12-31 Kink Company Diamond polishing disk and manufacturing method thereof
KR20100030475A (ko) * 2008-09-10 2010-03-18 이화다이아몬드공업 주식회사 연마공구 및 그 제조방법
JP2012086291A (ja) * 2010-10-18 2012-05-10 Disco Corp 切削砥石
KR20120058303A (ko) 2010-11-29 2012-06-07 이화다이아몬드공업 주식회사 Ｃｍｐ 패드용 고기능성컨디셔너 제조방법 및 그 방법으로 제조된 고기능성 패드컨디셔너

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