WO2022191236A1

WO2022191236A1 - Electrical current testing device and electrical current testing method

Info

Publication number: WO2022191236A1
Application number: PCT/JP2022/010278
Authority: WO
Inventors: 慶治別府; 済人尾方
Original assignee: 三菱電機株式会社
Priority date: 2021-03-12
Filing date: 2022-03-09
Publication date: 2022-09-15
Also published as: JPWO2022191236A1

Abstract

An electrical current testing device (100) comprises an electrode unit (10) and a movement mechanism (MM). The electrode unit (10) includes a support unit (2), an elastic unit (5), and a movable unit (6). The elastic unit (5) is supported by the support unit (2). The movable unit (6) is connected to the support unit (2) by the elastic unit (5). The movement mechanism (MM) is configured so as to move the electrode unit (10) in a movement direction (DR1), along which the support unit (2) and the movable unit (6) are arranged with the elastic unit (5) interposed therebetween. The movement mechanism (MM) is configured so as to move the movable unit (6) in the movement direction (DR1) by moving the support unit (2). The movable unit (6) protrudes further than the support unit (2) in the movement direction (DR1). The movable unit (6) is configured so as to move as a result of the elastic deformation of the elastic unit (5) in the movement direction (DR1).

Description

Energization inspection device and energization inspection method

The present disclosure relates to an energization inspection device and an energization inspection method.

There is an electrical inspection device that inspects semiconductor elements for defects by electrical inspection in which an electric current is passed through the semiconductor elements. For example, in the electrical inspection apparatus for a semiconductor chip (semiconductor element) disclosed in Japanese Patent No. 6082528 (Patent Document 1), the electrode (electrode portion) has a first contact surface that is the second contact surface of the semiconductor chip. It is configured to be inclined by the spherical portion of the load cell so as to follow the tangent surface.

Japanese Patent No. 6082528

In the energization inspection apparatus described in the above publication, the energization inspection of the semiconductor element is performed in a state in which a load is applied to the semiconductor chip (semiconductor element) by the energization inspection apparatus. If an electrical test is performed with a load applied to the semiconductor element, the semiconductor element softens and deforms. As a result, the semiconductor element deteriorates.

The present disclosure has been made in view of the above problems, and its object is to provide an electrical inspection apparatus and an electrical inspection method capable of reducing deterioration of semiconductor elements due to electrical inspection.

The energization inspection device of the present disclosure includes an electrode section and a moving mechanism. The electrode section includes a support section, an elastic section, and a movable section. The elastic portion is supported by the support portion. The movable portion is connected to the support portion by an elastic portion. The moving mechanism is configured to move the electrode portion along a moving direction in which the elastic portion is sandwiched between the support portion and the movable portion. The moving mechanism is configured to move the movable part along the moving direction by moving the supporting part. The movable portion protrudes from the support portion along the movement direction. The movable portion is configured to move as the elastic portion elastically deforms along the moving direction.

According to the energization inspection device of the present disclosure, the movable portion is configured to move as the elastic portion elastically deforms along the moving direction. Therefore, the load applied from the moving part to the semiconductor element is reduced by the movement of the moving part. Therefore, deterioration of the semiconductor element can be reduced.

FIG. 2 is a cross-sectional view schematically showing the configuration of the electrical inspection apparatus in a state in which the electrode portion and the semiconductor element of the electrical inspection apparatus according to Embodiment 1 are arranged with a gap therebetween; FIG. 2 is a cross-sectional view schematically showing the configuration of the electrical inspection apparatus in a state where the electrode portion of the electrical inspection apparatus and the semiconductor element are in contact with each other according to the first embodiment; FIG. 2 is a cross-sectional view schematically showing a configuration of an electrode section and a semiconductor element of the energization inspection apparatus according to Embodiment 1; 3 is a flowchart schematically showing an electrical inspection method according to Embodiment 1; FIG. 10 is a cross-sectional view schematically showing the configuration of the electrical inspection apparatus in a state in which the electrode portion and the semiconductor element of the electrical inspection apparatus according to Embodiment 2 are arranged with a gap therebetween; FIG. 11 is a cross-sectional view schematically showing the configuration of the electrical inspection apparatus in a state where the electrode portion of the electrical inspection apparatus and the semiconductor element are in contact with each other according to the second embodiment; FIG. 12 is a cross-sectional view schematically showing the configuration of the electrical inspection apparatus in a state where the electrode portion and the semiconductor element of the electrical inspection apparatus according to Embodiment 3 are arranged with a gap therebetween; FIG. 11 is a bottom view schematically showing the configuration of an electrode section of an electrical testing apparatus according to Embodiment 3; FIG. 11 is a cross-sectional view schematically showing the configuration of an electrical inspection apparatus in a state in which an electrode portion and a semiconductor element of the electrical inspection apparatus according to Embodiment 4 are arranged with a gap therebetween; FIG. 13 is a cross-sectional view schematically showing the configuration of the electrical inspection apparatus in a state where the electrode portion and the semiconductor element of the electrical inspection apparatus according to Embodiment 5 are arranged with a gap therebetween; FIG. 11 is a cross-sectional view schematically showing the configuration of an electrical inspection apparatus in a state in which an electrode portion and a semiconductor element of the electrical inspection apparatus according to Embodiment 6 are arranged with a gap therebetween; FIG. 14 is a cross-sectional view schematically showing the configuration of an electrical inspection apparatus in a state where an electrode portion and a semiconductor element of the electrical inspection apparatus according to Embodiment 7 are arranged with a gap therebetween;

Embodiments will be described below based on the drawings. In addition, below, the same code|symbol shall be attached|subjected to the same or corresponding part, and the overlapping description is not repeated.

Embodiment 1.
1 to 3, the configuration of the energization inspection apparatus 100 according to the first embodiment will be described.

As shown in FIG. 1, the energization inspection apparatus 100 is an energization inspection apparatus for inspecting the semiconductor element SC. The energization inspection device 100 includes an electrode section 10 and a moving mechanism MM. In this embodiment, the electrical inspection apparatus 100 further includes a stage 11, a positioning mechanism 12, a cooling mechanism CM, and an inspection mechanism IM. The electrode section 10 includes a support section 2 , an elastic section 5 and a movable section 6 . In the present embodiment, electrode section 10 further includes fixing section 4 .

The semiconductor element SC inspected by the energization inspection apparatus 100 is, for example, a metal oxide semiconductor field effect transistor (MOSFET). The semiconductor element SC includes a source electrode SC1, a protective film SC2, a semiconductor substrate SC3, and a drain electrode (not shown).

The source electrode SC1 is configured as an anode. The source electrode SC1 is formed, for example, by sputtering aluminum (Al). The protective film SC2 surrounds the entire periphery of the source electrode SC1. The thickness of the protective film SC2 is thicker than the thickness of the source electrode SC1. The protective film SC2 is an insulator. The withstand voltage of the semiconductor element SC is improved by the protective film SC2. A source electrode SC1 and a protective film SC2 are arranged on the semiconductor substrate SC3. A semiconductor substrate SC3 is placed on the stage 11 . A drain electrode (not shown) faces the source electrode SC1. The drain electrode has conductivity. Thereby, the semiconductor element SC and the stage 11 are electrically connected.

The stage 11 has conductivity. The material of the stage 11 is a conductive solid. The material of the stage 11 is copper (Cu), for example. The stage 11 is connected to a cooling mechanism CM for cooling the semiconductor element SC.

The cooling mechanism CM includes, for example, a chiller and piping (not shown). The stage 11 is connected to the chiller by piping. Thereby, the stage 11 is configured to exchange heat with the chiller.

The positioning mechanism 12 is arranged on the stage 11 so as to surround the semiconductor element SC with a gap from the periphery of the semiconductor element SC. By arranging the semiconductor element SC inside the positioning mechanism 12 , tilting of the semiconductor element SC due to contact with the positioning mechanism 12 is suppressed.

The inspection mechanism IM electrically connects the electrode section 10 and the stage 11 . The inspection mechanism IM is configured as an inspection circuit. The inspection mechanism IM is configured to inspect the characteristics of the semiconductor element SC based on the current flowing through the semiconductor element SC or the voltage applied to the semiconductor element SC.

The moving mechanism MM is configured to move the electrode section 10 along the moving direction DR1 in which the elastic section 5 is sandwiched between the supporting section 2 and the movable section 6 . The moving mechanism MM is configured to move the movable portion 6 along the moving direction DR1 by moving the supporting portion 2 . In this embodiment, the direction of movement DR1 is along the direction of gravity.

The electrode section 10 is arranged so as to face the semiconductor element SC and the stage 11 . The electrode portion 10 is configured to be arranged with a space from the semiconductor element SC.

As shown in FIG. 2, the electrode section 10 is configured to be able to contact with the semiconductor element SC. The electrode section 10 is configured to apply a load to each of the source electrode SC1 and the protective film SC2 of the semiconductor element SC. The load applied to the protective film SC2 by the electrode portion 10 is determined based on the desired temperature to be maintained by the semiconductor element SC and the heat dissipation of the cooling mechanism CM. The load applied by the electrode section 10 to the source electrode SC1 is experimentally determined based on the load applied by the support section 2 to the protective film SC2 of the semiconductor element SC and the spring constant of the elastic section 5. FIG.

The supporting portion 2 is arranged so as to face the semiconductor element SC. The support portion 2 supports the elastic portion 5 . The support portion 2 may have the body portion 21 and the insulating portion 3 . The body portion 21 has conductivity. The body portion 21 has a first surface 21a and a second surface 21b. The first surface 21a is provided so as to face the semiconductor element SC. The second surface 21b faces the first surface 21a.

The insulating portion 3 covers the first surface 21a of the main body portion 21 . The material of the insulating portion 3 is, for example, resin or ceramics. When the supporting portion 2 includes the insulating portion 3, the supporting portion 2 is configured so that the insulating portion 3 applies a load to the protective film SC2 of the semiconductor element SC.

The support portion 2 has an end surface 2a. The end face 2a is configured as a contact face with the semiconductor element SC. In the present embodiment, the end face 2a is provided on the insulating portion 3. As shown in FIG.

A concave portion 25 is provided in the support portion 2 . Recess 25 is recessed along moving direction DR1 from end face 2a. The inner wall of the recessed portion 25 surrounds the outer peripheries of the fixed portion 4 , the elastic portion 5 and the movable portion 6 . In other words, the fixed portion 4 , the elastic portion 5 and the movable portion 6 are arranged inside the recess 25 .

The fixed part 4 fixes the elastic part 5 to the support part 2 . Specifically, the fixing portion 4 fixes the elastic portion 5 to the bottom surface of the recess 25 . The fixed part 4 has conductivity.

The elastic portion 5 is supported by the support portion 2 . The elastic portion 5 is, for example, a compression coil spring. As shown in FIG. 1, when the movable portion 6 and the semiconductor element SC are separated from each other, the elastic portion 5 extends beyond its free length. Further, as shown in FIG. 2, the length of the elastic portion 5 when the movable portion 6 and the semiconductor element SC are in contact with each other is equal to the length of the elastic portion 5 when the movable portion 6 and the semiconductor element SC are separated from each other. (see Figure 1). In the state where the movable portion 6 and the semiconductor element SC are in contact with each other, the elastic portion 5 is shrunk more than its free length. A fixed portion 4 is fixed to the first end 5 a of the elastic portion 5 . A movable portion 6 is fixed to the second end 5 b of the elastic portion 5 . In this embodiment, the elastic portion 5 has conductivity. In addition, the elastic part 5 may have insulation so that it may mention later.

The movable part 6 is connected to the support part 2 by the elastic part 5 . The movable portion 6 protrudes from the support portion 2 along the movement direction DR1. The movable portion 6 is configured to move by elastically deforming the elastic portion 5 along the movement direction DR1.

The movable part 6 is arranged so as to face the semiconductor element SC. The movable portion 6 is configured to be able to contact the semiconductor element SC. Specifically, the movable portion 6 is configured to be able to contact the source electrode SC1 of the semiconductor element SC. Thereby, the movable part 6 is configured to apply a load to the source electrode SC1. The load applied by the movable portion 6 to the source electrode SC1 is different from the load applied by the support portion 2 to the protective film SC2. Specifically, the load applied by the movable portion 6 to the source electrode SC1 is smaller than the load applied by the support portion 2 to the protective film SC2.

The movable portion 6 has a front end 6a and a rear end 6b. The tip 6a is configured to be able to contact the semiconductor element SC. In this embodiment, the tip 6a has a curved shape. In other words, the tip 6a has an R shape. Note that the curvature of the tip 6a may be determined according to the material of the source electrode SC1 of the semiconductor element SC and the current value of the applied current. The curvature of tip 6a may be determined experimentally. The rear end 6b faces the front end 6a. The rear end 6b is fixed to the elastic portion 5. As shown in FIG.

As shown in FIG. 3, when the inner shape of the recessed portion 25 of the support portion 2 is L1, the outer shape dimension of the source electrode SC1 is L2, and the outer shape dimension of the support portion 2 is L3, L1, L2 and L3 are expressed by the formula The relationship of (1) is satisfied.

L3>L2>L1 (1)
That is, the outer dimension L3 of the support portion 2, the outer dimension L2 of the source electrode SC1, and the inner shape L1 of the concave portion 25 of the support portion 2 are equal to the outer dimension L3 of the support portion 2, the outer dimension L2 of the source electrode SC1, The dimension of the inner shape L1 of the concave portion 25 of the support portion 2 is larger in order.

Further, the dimension along the moving direction DR1 of the supporting portion 2 is M1, the distance from the tip 6a of the movable portion 6 to the second surface 21b of the supporting portion 2 is M2, and the difference in thickness between the source electrode SC1 and the protective film SC2 is M3, M1, M2 and M3 satisfy the relationships of equations (2) and (3).

M2>M1 (2)
M2-M1>M3 (3)
That is, the distance M2 from the tip 6a of the movable portion 6 to the second surface 21b of the support portion 2 is greater than the dimension M1 of the support portion 2 along the moving direction DR1. The difference between the distance M2 from the tip 6a of the movable portion 6 to the second surface 21b and the dimension M1 along the movement direction DR1 (the amount of protrusion of the movable portion 6 from the support portion 2) is the difference between the source electrode SC1 and the protective film SC2. is greater than the thickness difference M3.

Next, the energization inspection method according to the first embodiment will be described with reference to FIGS. 1, 2 and 4. FIG.
The energization inspection method is an energization inspection method for inspecting the semiconductor element SC by energization inspection. As shown in FIG. 4, the energization inspection method includes a preparation step S101 and an inspection step S102.

As shown in FIG. 1, in the preparation step S101, the energization inspection device 100 is prepared. Also, in the preparation step S101, the semiconductor element SC is prepared. A semiconductor element SC is placed on the stage 11 . The semiconductor element SC is placed on the stage 11 so as to face the movable portion 6 . The semiconductor element SC is spaced apart from the positioning mechanism 12 .

Subsequently, as shown in FIG. 2, the movable part 6 protruding from the support part 2 along the movement direction DR1 is moved by the movement of the support part 2 by the movement mechanism MM until it comes into contact with the semiconductor element SC. As a result, the semiconductor element SC is inspected by the energization inspection in a state in which the movable portion 6 is moved by elastic deformation along the moving direction DR1 of the elastic portion 5 . This causes the movable portion 6 to come into contact with the semiconductor element SC. Specifically, the movable portion 6 contacts the source electrode SC1 of the semiconductor element SC. The movable portion 6 contacts the source electrode SC1 of the semiconductor element SC while the insulating portion 3 or the support portion 2 does not contact the protective film SC2 of the semiconductor element SC. Thereby, a closed circuit is formed by the supporting portion 2, the fixed portion 4, the elastic portion 5, the movable portion 6, the semiconductor element SC, the stage 11, and the inspection mechanism IM.

The movable part 6 is moved by elastic deformation of the elastic part 5 along the movement direction DR1. Specifically, the movable portion 6 moves from the semiconductor element SC toward the elastic portion 5 along the moving direction DR1.

Subsequently, the insulating portion 3 of the support portion 2 contacts the protective film SC2 of the semiconductor element SC. Thereby, a load is applied to the protective film SC2.

After the movable portion 6 comes into contact with the semiconductor element SC, the movable portion 6 is moved in accordance with the rotation of the distal end portion of the elastic portion 5 in the circumferential direction until the insulating portion 3 of the support portion 2 contacts the protective film SC2. rotates in the circumferential direction.

In step S102 to be inspected, current or voltage is applied to the semiconductor element SC while the load is applied by the electrode part 10 to the semiconductor element SC. In this embodiment, a current flows through the semiconductor element SC. As a result, in the inspected step S102, the semiconductor element SC in contact with the movable portion 6 is inspected by the electrical inspection.

Preferably, the temperature of the semiconductor element SC is maintained between 50° C. and 210° C. in step S102 to be inspected. Also, desirably, the current flowing through the semiconductor element SC is maintained at 50 A/cm ² or more and 300 A/cm ² or less in the inspected step S102. In addition, it is desirable that the energization time to the semiconductor element SC is 1 second or more and 300 seconds or less.

In this embodiment, the temperature of the semiconductor element SC is maintained at 100° C. and the current flowing through the semiconductor element SC is maintained at 100 A/cm ² in the inspected step S102. Specifically, by controlling the load on the semiconductor element SC and the heat dissipation of the stage 11, the temperature of the semiconductor element SC and the current flowing through the semiconductor element SC are maintained. In the inspected step S102, the energization time to the semiconductor element SC is 60 seconds.

Subsequently, the supporting portion 2 is moved to the side opposite to the semiconductor element SC along the moving direction DR1 by the moving mechanism MM. As a result, the movable portion 6 is separated from the semiconductor element SC.

Next, the effects of this embodiment will be described.
According to the energization inspection apparatus 100 according to the first embodiment, as shown in FIGS. 1 and 2, the movable portion 6 is configured to move by elastically deforming the elastic portion 5 along the movement direction DR1. It is Therefore, the movable portion 6 moves when the movable portion 6 contacts the semiconductor element SC. Therefore, the load applied from the electrode portion 10 to the semiconductor element SC is reduced due to the movement of the movable portion 6 . Therefore, it is possible to reduce the softening and deformation of the semiconductor element SC caused by the current flowing through the semiconductor element SC with the load applied. As described above, it is possible to reduce the deterioration of the semiconductor element SC due to the energization inspection.

Since the load applied from the electrode section 10 to the semiconductor element SC is reduced by the movement of the movable section 6, it is possible to reduce contact thermal resistance and contact resistance between the semiconductor element SC and the stage 11 in a state where the load is applied. can. Therefore, it is possible to reduce the softening and deformation of the semiconductor element SC caused by the current flowing through the semiconductor element SC with the load applied. Therefore, it is possible to reduce the deterioration of the semiconductor element SC due to the energization inspection.

As shown in FIGS. 1 and 2, the movable portion 6 protrudes from the support portion 2 along the movement direction DR1. Further, the amount of protrusion of the movable portion 6 from the support portion 2 is larger than the difference in thickness between the protective film SC2 and the source electrode SC1. Therefore, even when the protective film SC2 of the semiconductor element SC is thicker than the source electrode SC1, the movable portion 6 can come into contact with the source electrode SC1. Therefore, even when the protective film SC2 of the semiconductor element SC is thicker than the source electrode SC1, the semiconductor element SC can be inspected by the electrical inspection.

According to the energization inspection method according to the first embodiment, as shown in FIGS. 1 and 2, the moving mechanism MM moves the supporting portion 2 from the state in which the movable portion 6 protrudes from the supporting portion 2 along the moving direction DR1. is moved, the movable portion 6 is moved until it comes into contact with the semiconductor element SC. Subsequently, the movable portion 6 is moved by elastic deformation of the elastic portion 5 along the movement direction DR1. Therefore, the load applied from the electrode portion 10 to the semiconductor element SC is reduced by the movement of the movable portion 6 . Therefore, it is possible to reduce the softening and deformation of the semiconductor element SC caused by the current flowing through the semiconductor element SC with the load applied. Therefore, it is possible to reduce the deterioration of the semiconductor element SC due to the energization inspection.

By rotating the movable part 6 in the circumferential direction, the contact resistance between the semiconductor element SC and the movable part 6 can be further reduced in the step S101 to be prepared.

In the inspected step S102, the temperature of the semiconductor element SC is maintained at 50° C. or more and 210° C. or less. Also, the current flowing through the semiconductor element SC is maintained at 50 A/cm ² or more and 300 A/cm ² or less. Also, the energization time to the semiconductor element SC is 1 second or more and 300 seconds or less. Therefore, defects contained in the semiconductor element SC can be grown. Therefore, inspection of the semiconductor element SC and growth of defects can be performed simultaneously.

Embodiment 2.
Next, the configuration of the energization inspection apparatus 100 according to the second embodiment will be described with reference to FIGS. 5 and 6. FIG. The second embodiment has the same configuration and effects as those of the first embodiment unless otherwise specified. Therefore, the same reference numerals are given to the same configurations as in the above-described first embodiment, and description thereof will not be repeated.

As shown in FIGS. 5 and 6, the tip 6a of the movable portion 6 of the electrical inspection apparatus 100 according to this embodiment is flat. Desirably, the tip 6a of the movable portion 6 is parallel to the surface of the source electrode SC1 of the semiconductor element SC.

Next, the effects of this embodiment will be described.
According to the electrical inspection apparatus 100 according to the second embodiment, as shown in FIGS. 5 and 6, the tip 6a of the movable portion 6 is flat. Therefore, the contact area between the movable portion 6 and the source electrode SC1 is larger than when the tip 6a of the movable portion 6 has a curved surface. Therefore, the current density when the current flows between the movable portion 6 and the semiconductor element SC is smaller than when the tip 6a of the movable portion 6 has a curved surface. Thereby, the temperature rise of the source electrode SC1 caused by the contact resistance between the movable portion 6 and the semiconductor element SC can be suppressed. Therefore, it is possible to further reduce the deterioration of the semiconductor element SC due to the energization inspection.

Embodiment 3.
Next, the configuration of the energization inspection apparatus 100 according to the third embodiment will be described with reference to FIGS. 7 and 8. FIG. Embodiment 3 has the same configuration and effects as those of Embodiment 1 described above unless otherwise specified. Therefore, the same reference numerals are given to the same configurations as in the above-described first embodiment, and description thereof will not be repeated.

As shown in FIG. 7, the electrode section 10 of the energization inspection apparatus 100 according to the present embodiment further includes an energization section 7 . The conducting portion 7 has conductivity. The movable portion 6 and the elastic portion 5 are connected by a conducting portion 7 . The conducting portion 7 is, for example, a leaf spring. A first end portion 7 a of the conducting portion 7 is sandwiched between the elastic portion 5 and the movable portion 6 . A second end portion 7 b of the conducting portion 7 is fixed to the bottom surface of the recess 25 . The movable portion 6 is fixed to the current-carrying portion 7 .

FIG. 8 is a bottom view of the electrode section 10 of the energization inspection device 100 viewed from the stage 11. FIG. A dashed line indicates the outline of the source electrode SC1 of the semiconductor element SC. A two-dot chain line indicates the outer shape of the protective film SC2 of the semiconductor element SC.

As shown in FIG. 8, the concave portion 25 of the support portion 2 may open toward the side of the support portion 2. When the dimension of the recess 25 in the width direction is L4, the relation of the formula (4) is established with the dimension L2 of the outer shape of the source electrode SC1.

L2>L4 (4)
Therefore, the widthwise dimension L4 of the recess 25 is smaller than the outer dimension L2 of the source electrode SC1.

Next, the effects of this embodiment will be described.
According to the energization inspection apparatus 100 according to Embodiment 3, the movable portion 6 and the elastic portion 5 are connected by the energization portion 7 as shown in FIG. 7 . For this reason, the current flowing through the current testing apparatus 100 during the current testing flows not only to the elastic portion 5 but also to the conductive portion 7 between the movable portion 6 and the support portion 2 . In other words, the current flowing through the electrode portion 10 is divided between the elastic portion 5 and the conducting portion 7 . Therefore, the current flowing through the elastic portion 5 is reduced. Therefore, the life of the elastic portion 5 can be lengthened. In particular, the life of the elastic portion 5 can be lengthened when the semiconductor element SC is repeatedly inspected by the energization inspection apparatus 100 .

Embodiment 4.
Next, the configuration of the energization inspection apparatus 100 according to Embodiment 4 will be described with reference to FIG. 9 . The fourth embodiment has the same configuration and effects as those of the first embodiment unless otherwise specified. Therefore, the same reference numerals are given to the same configurations as in the above-described first embodiment, and description thereof will not be repeated.

As shown in FIG. 9, the electrode section 10 of the electrical testing apparatus 100 according to the present embodiment further includes a thin film section 8. As shown in FIG. The supporting portion 2 and the thin film portion 8 are conductive. The thin film portion 8 covers the movable portion 6 on the end surface 2 a of the support portion 2 . The thin film portion 8 is electrically connected to the support portion 2 and the movable portion 6 . The thin film portion 8 is fixed to the support portion 2 . Note that the support portion 2 according to the present embodiment does not include the insulating portion 3 (see FIG. 1).

The thin film portion 8 has a shape that protrudes toward the semiconductor element SC. The thin film portion 8 has a convex shape toward the semiconductor element SC by being pushed by the movable portion 6 projecting from the support portion 2 toward the semiconductor element SC. Although the electrode portion 10 includes one thin film portion 8 in FIG. 9 , it may include a plurality of thin film portions 8 . Also, the thickness of the thin film portion 8 may be appropriately determined within a range in which the source electrode SC1 of the semiconductor element SC is not deteriorated or destroyed.

Next, the effects of this embodiment will be described.
According to the energization inspection apparatus 100 according to the fourth embodiment, the thin film portion 8 covers the movable portion 6 on the end face 2a of the support portion 2, as shown in FIG. The thin film portion 8 has conductivity. Moreover, the support portion 2 does not include the insulating portion 3 . Therefore, it is possible to carry out an electrical test of the semiconductor element SC in a state in which the current flows through the supporting portion 2 and the thin film portion 8 of the electrode portion 10 . Therefore, the current flowing through the electrode portion 10 is divided between the elastic portion 5 and the thin film portion 8 . In other words, the current conducting path includes the supporting portion 2, the fixed portion 4, the elastic portion 5, the movable portion 6, the thin film portion 8, the semiconductor element SC, the stage 11, the supporting portion 2, the fixed portion 4, the thin film portion 8, and the semiconductor element. SC and stage 11. Therefore, the current flowing through the elastic portion 5 is reduced by the thin film portion 8 . Therefore, the life of the elastic portion 5 is improved.

The thin film portion 8 covers the movable portion 6 on the end surface 2 a of the support portion 2 . Therefore, the movable portion 6 can be protected by the thin film portion 8 . Moreover, since the thin film portion 8 can be easily maintained, the electrode portion 10 can be easily maintained.

Embodiment 5.
Next, the configuration of the energization inspection apparatus 100 according to Embodiment 5 will be described with reference to FIG. 10 . The fifth embodiment has the same configuration and effects as those of the fourth embodiment unless otherwise specified. Therefore, the same reference numerals are given to the same configurations as in the fourth embodiment, and the description thereof will not be repeated.

As shown in FIG. 10, the elastic portion 5 of the energization inspection device 100 according to the present embodiment has insulating properties. The material of the elastic portion 5 is, for example, an insulating material such as resin or rubber. In the present embodiment, the energization path in the energization inspection of the semiconductor element SC is the supporting portion 2, the thin film portion 8, the semiconductor element SC and the stage 11. FIG.

In this embodiment, the movable portion 6 has rigidity. The movable part 6 may be configured so as not to be elastically deformed.

Next, the effects of this embodiment will be described.
According to the energization inspection apparatus 100 according to Embodiment 5, as shown in FIG. 10, the elastic portion 5 has insulating properties. For this reason, it is possible to suppress current from flowing through the elastic portion 5 in the energization inspection of the semiconductor element SC. Therefore, deterioration of the elastic portion 5 due to energization can be suppressed.

Embodiment 6.
Next, the configuration of the energization inspection apparatus 100 according to Embodiment 6 will be described with reference to FIG. 11 . Embodiment 6 has the same configuration and effects as those of Embodiment 1 unless otherwise specified. Therefore, the same reference numerals are given to the same configurations as in the first embodiment, and the description thereof will not be repeated.

As shown in FIG. 11, the supporting portion 2 of the energization inspection device 100 according to the present embodiment is provided with a concave portion 25 having a constant angle θ with respect to the moving direction DR1. The angle θ is experimentally determined in the range of −90°<θ<90° based on the thickness of the source electrode, the material of the movable portion, and the spring constant of the elastic portion. The movable portion 6 is tilted with respect to the movement direction DR1.

Next, the effects of this embodiment will be described.
According to the energization inspection apparatus 100 according to Embodiment 6, as shown in FIG. 11, the support portion 2 is provided with the recessed portion 25 having a constant angle θ with respect to the moving direction DR1. As a result, the movable portion 6 is tilted with respect to the movement direction DR1. Therefore, after the tip 6a of the movable portion 6 contacts the source electrode SC1 of the semiconductor element SC, until the end face 2a contacts the protective film SC2 of the semiconductor element SC, the movable portion 6 moves in the direction perpendicular to the moving direction DR1. slides against the source electrode SC1. Therefore, it becomes easy to break the oxide film formed on the source electrode SC1 of the semiconductor element SC, and the contact resistance between the source electrode SC1 and the tip 6a of the movable portion 6 can be further reduced in the prepared step S101. can.

Embodiment 7.
Next, using FIG. 12, the configuration of the energization inspection apparatus 100 according to Embodiment 7 will be described. The seventh embodiment has the same configuration and effects as those of the first embodiment unless otherwise specified. Therefore, the same reference numerals are given to the same configurations as in the first embodiment, and the description thereof will not be repeated.

As shown in FIG. 12, in the energization inspection device 100 according to the present embodiment, the support portion 2 is provided with an air tank portion 27 and a vent hole 28 . The load applied to the source electrode SC<b>1 of the semiconductor element SC by the movable portion 6 is experimentally determined according to the material of the movable portion 6 and the diameter of the vent 28 .

The movable portion 6 has a flange portion 26 .
Next, the effects of this embodiment will be described.

According to the energization inspection apparatus 100 according to the seventh embodiment, as shown in FIG. 12, the support portion 2 is moved by the moving mechanism MM, and the tip 6a of the movable portion 6 is brought into contact with the source electrode SC1 of the semiconductor element SC. Thereafter, the air contained in the air tank portion 27 is compressed until the protective film SC2 of the semiconductor element SC contacts the support portion 2, and the compressed air pushes the movable portion 6 in the same direction as the moving direction DR1. Therefore, a load is applied to the source electrode SC1 of the semiconductor element SC. After the protective film SC2 of the semiconductor element SC comes into contact with the supporting portion 2, the pressure of the air compressed through the vent 28 gradually decreases and balances with the atmospheric pressure outside the supporting portion 2, so that the source electrode SC1 the load applied to the As described above, by applying a load to the source electrode SC1 of the semiconductor element SC, it is possible to avoid deterioration of elastic portions such as springs and rubbers.

The load applied to the source electrode SC1 in this way does not need to be continued during the step S102 of inspection, and may be applied only temporarily during the step S101 of preparation.

The embodiments disclosed this time should be considered illustrative in all respects and not restrictive. The scope of the present disclosure is indicated by the scope of claims rather than the above description, and is intended to include all changes within the meaning and scope of equivalence to the scope of claims.

2 support part, 2a end face, 5 elastic part, 6 movable part, 7 conducting part, 8 thin film part, 10 electrode part, 100 electrification inspection device, SC semiconductor element.

Claims

an electrode section including a support section, an elastic section supported by the support section, and a movable section connected to the support section by the elastic section;
a moving mechanism configured to move the electrode portion along a moving direction in which the elastic portion is sandwiched between the support portion and the movable portion;
The moving mechanism is configured to move the movable part along the moving direction by moving the supporting part,
The movable portion protrudes from the support portion along the movement direction,
The energization inspection device, wherein the movable portion is configured to move when the elastic portion is elastically deformed along the moving direction.
2. The energization according to claim 1, wherein the support portion has an end surface that applies a load to the semiconductor element, and the load applied to the semiconductor element by the end surface is different from the load applied to the semiconductor element by the tip of the movable portion. inspection equipment.
The electrode portion further includes a conducting portion having conductivity,
3. The energization inspection device according to claim 1, wherein said movable portion and said elastic portion are connected by said energization portion.
The electrode portion further includes a thin film portion,
The support portion and the thin film portion have conductivity,
The electrical inspection apparatus according to any one of claims 1 to 3, wherein the thin film portion covers the movable portion on the end surface of the support portion.
The energization inspection device according to claim 4, wherein the elastic portion has insulating properties.
The electrical inspection apparatus according to any one of claims 1 to 5, wherein the tip of the movable portion is flat.
The electrical inspection device according to any one of claims 1 to 6, wherein the movable portion is inclined with respect to the moving direction.
The electrical inspection device according to any one of claims 1 to 7, wherein the elastic portion is an air tank portion.
A energization inspection method for inspecting a semiconductor element by energization inspection,
an electrode section including a support section, an elastic section supported by the support section, and a movable section connected to the support section by the elastic section; a step of preparing an energization inspection device comprising a moving mechanism configured to move the electrode portion by
The movable portion protruding from the supporting portion along the moving direction is moved until it contacts the semiconductor element by the movement of the supporting portion by the moving mechanism, so that the elastic portion moves along the moving direction. and a step of inspecting the semiconductor element by an electrical inspection while being moved by elastic deformation.
In the inspecting step, the temperature of the semiconductor element is maintained at 50° C. or higher and 210° C. or lower, the current flowing through the semiconductor element is maintained at 50 A/cm 2 or higher and 300 A/cm 2 or lower, and The energization inspection method according to claim 9, wherein the energization time is 1 second or more and 300 seconds or less.