WO2022186274A1 - Cellule de batterie solaire au silicium cristallin, dispositif de batterie solaire et module de batterie solaire - Google Patents
Cellule de batterie solaire au silicium cristallin, dispositif de batterie solaire et module de batterie solaire Download PDFInfo
- Publication number
- WO2022186274A1 WO2022186274A1 PCT/JP2022/008864 JP2022008864W WO2022186274A1 WO 2022186274 A1 WO2022186274 A1 WO 2022186274A1 JP 2022008864 W JP2022008864 W JP 2022008864W WO 2022186274 A1 WO2022186274 A1 WO 2022186274A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- crystalline silicon
- holes
- light
- receiving surface
- Prior art date
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 154
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000010409 thin film Substances 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 239000013078 crystal Substances 0.000 claims description 33
- 230000001681 protective effect Effects 0.000 claims description 25
- 239000003566 sealing material Substances 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 230000005484 gravity Effects 0.000 claims description 7
- 238000010248 power generation Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 54
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000002210 silicon-based material Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 239000008393 encapsulating agent Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000003776 cleavage reaction Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000007017 scission Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
Definitions
- Patent Documents 1 and 2 disclose a thin-film solar cell, which is a see-through type solar cell having a large number of through holes.
- Patent Literatures 3 and 4 disclose techniques related to see-through type solar cells which are crystalline silicon solar cells and have a large number of through holes.
- Patent Documents 3 and 4 disclose techniques for forming a large number of through holes in a crystalline silicon substrate.
- the transparent electrode layers 28, 38 are made of a transparent conductive material.
- Transparent conductive materials include ITO (Indium Tin Oxide: composite oxide of indium oxide and tin oxide) and ZnO (Zinc Oxide).
- the metal electrode layers 29 and 39 are made of metal material. For example, Cu, Ag, Al, and alloys thereof are used as the metal material.
- the metal electrode layer may be formed of, for example, a conductive paste material containing metal powder such as silver.
- ⁇ 0 be the angle formed by the two crystal planes A1 and A2 of the crystalline silicon substrate 11 on the light-receiving surface and the back surface
- - One of the plurality of through-holes 40 is defined as a target through-hole 40t
- two of m through-holes (m is an integer equal to or greater than 2) adjacent to the target through-hole 40t are selected as first adjacent ones.
- the crystal planes (cleavage planes) A1 and A2 of the crystalline silicon substrate 11 and the array lines B1, B2 and B3 of the through holes 40 to which stress is applied are aligned.
- breakage of the crystalline silicon substrate 11 is less likely to occur.
- the upper limit value .theta.max is obtained by the above equation (4).
- the target through-hole 40t and the adjacent through-holes 40a1 and 40a2 are separated from each other by satisfying the expression (2).
- the first adjacent through-hole 40a1 and the second adjacent through-hole 40a2 are separated from each other.
- the first electrode layer 27A is formed in a region between through holes 40A, which will be described later, on the light receiving surface side of the crystalline silicon substrate 11A.
- the first electrode layer 27A is formed in a grid pattern on the light receiving surface side of the crystalline silicon substrate 11A.
- the second electrode layer 37A is formed on the back surface side of the crystalline silicon substrate 11A in a region between through holes 40A, which will be described later.
- the second electrode layer 37A is formed in a grid pattern on the back surface side of the crystalline silicon substrate 11A.
- One row of the plurality of through-holes 40A arranged in the X direction is aligned along one end (right end: one end) of the solar cell 2A.
- Each of the through-holes 40A in one row has a partially cut-out shape.
- Another row of the plurality of through holes 40A arranged in the X direction is aligned along the other end (left end: other end) of the solar cell 2A.
- Each of the through-holes 40A may have a partially cut-out shape.
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne une cellule de batterie solaire au silicium cristallin qui permet de supprimer une réduction de la résistance provoquée par la formation d'un trou traversant. La présente invention est une cellule de batterie solaire au silicium cristallin (2) comprenant : un substrat de silicium cristallin (11) ; et un film mince à base de silicium électroconducteur formé sur une surface principale du substrat de silicium cristallin (11), ladite cellule de batterie solaire au silicium cristallin (2) ayant une surface de réception de lumière qui reçoit une lumière incidente, et une surface arrière sur le côté opposé à la surface de réception de lumière, et ayant également une pluralité de trous traversants (40) qui s'étendent de la surface de réception de lumière à la surface arrière et transmettent la lumière. La pluralité de trous traversants (40) sont agencés en deux dimensions le long d'une ou d'une pluralité de lignes d'agencement sur la surface de réception de la lumière et la surface arrière, les lignes d'agencement étant non parallèles aux surfaces cristallines (A1, A2) du substrat de silicium cristallin (11).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-033642 | 2021-03-03 | ||
| JP2021033642A JP2022134495A (ja) | 2021-03-03 | 2021-03-03 | 結晶シリコン系太陽電池セル、太陽電池デバイスおよび太陽電池モジュール |
| JP2021-035570 | 2021-03-05 | ||
| JP2021035570A JP2022135633A (ja) | 2021-03-05 | 2021-03-05 | 結晶シリコン系太陽電池 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2022186274A1 true WO2022186274A1 (fr) | 2022-09-09 |
Family
ID=83154638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2022/008864 WO2022186274A1 (fr) | 2021-03-03 | 2022-03-02 | Cellule de batterie solaire au silicium cristallin, dispositif de batterie solaire et module de batterie solaire |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2022186274A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006120735A1 (fr) * | 2005-05-11 | 2006-11-16 | Mitsubishi Denki Kabushiki Kaisha | Batterie solaire et son procede de fabrication |
| WO2010138976A1 (fr) * | 2009-05-29 | 2010-12-02 | Solexel, Inc. | Substrat semi-conducteur tridimensionnel à couches minces avec trous de passage, et procédés pour sa fabrication |
| JP2011171542A (ja) * | 2010-02-19 | 2011-09-01 | Toray Eng Co Ltd | 太陽電池モジュール |
| WO2014186300A1 (fr) * | 2013-05-12 | 2014-11-20 | Solexel, Inc. | Stores et rideaux solaires photovoltaïques pour bâtiments résidentiels et commerciaux |
| WO2020184301A1 (fr) * | 2019-03-11 | 2020-09-17 | 株式会社カネカ | Dispositif de batterie solaire, module de batterie solaire et procédé de production de dispositif de batterie solaire |
-
2022
- 2022-03-02 WO PCT/JP2022/008864 patent/WO2022186274A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006120735A1 (fr) * | 2005-05-11 | 2006-11-16 | Mitsubishi Denki Kabushiki Kaisha | Batterie solaire et son procede de fabrication |
| WO2010138976A1 (fr) * | 2009-05-29 | 2010-12-02 | Solexel, Inc. | Substrat semi-conducteur tridimensionnel à couches minces avec trous de passage, et procédés pour sa fabrication |
| JP2011171542A (ja) * | 2010-02-19 | 2011-09-01 | Toray Eng Co Ltd | 太陽電池モジュール |
| WO2014186300A1 (fr) * | 2013-05-12 | 2014-11-20 | Solexel, Inc. | Stores et rideaux solaires photovoltaïques pour bâtiments résidentiels et commerciaux |
| WO2020184301A1 (fr) * | 2019-03-11 | 2020-09-17 | 株式会社カネカ | Dispositif de batterie solaire, module de batterie solaire et procédé de production de dispositif de batterie solaire |
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