WO2022166586A1 - Capteur de température infrarouge de type numérique et dispositif électronique - Google Patents

Capteur de température infrarouge de type numérique et dispositif électronique Download PDF

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Publication number
WO2022166586A1
WO2022166586A1 PCT/CN2022/072787 CN2022072787W WO2022166586A1 WO 2022166586 A1 WO2022166586 A1 WO 2022166586A1 CN 2022072787 W CN2022072787 W CN 2022072787W WO 2022166586 A1 WO2022166586 A1 WO 2022166586A1
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WO
WIPO (PCT)
Prior art keywords
infrared
integrated circuit
sensing element
temperature sensor
circuit chip
Prior art date
Application number
PCT/CN2022/072787
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English (en)
Chinese (zh)
Inventor
陈华辉
Original Assignee
芯海科技（深圳）股份有限公司
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Application filed by 芯海科技（深圳）股份有限公司 filed Critical 芯海科技（深圳）股份有限公司
Publication of WO2022166586A1 publication Critical patent/WO2022166586A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity

Definitions

  • the utility model relates to the technical field of sensors, in particular to a digital infrared temperature sensor and electronic equipment.
  • an infrared sensing element and an ASIC Application Specific Integrated Circuit
  • ASIC Application Specific Integrated Circuit
  • the infrared sensing element is very sensitive to temperature, and the small size of the package may cause other components in the package to affect the infrared sensing element, resulting in inaccurate temperature measurement.
  • the purpose of this application is to propose a digital infrared temperature sensor and an electronic device to solve the above problems.
  • the present application achieves the above objects through the following technical solutions.
  • an embodiment of the present application provides a digital infrared temperature sensor, which includes an integrated circuit chip, an infrared sensing element, a heat insulation layer and a package shell, and the infrared sensing element and the integrated circuit chip are arranged in layers at intervals. Electrical connection; the heat insulation layer is arranged between the integrated circuit chip and the infrared sensing element, and the integrated circuit chip and the infrared sensing element are packaged in the package casing.
  • an embodiment of the present application provides an electronic device, including a casing and the digital infrared temperature sensor described in the first aspect, where the digital infrared temperature sensor is disposed in the casing.
  • the digital infrared temperature sensor provided by the embodiment of the present application can isolate the heat transfer to a certain extent by disposing a heat insulation layer between the integrated circuit chip and the infrared sensing element, and avoid the generation of the integrated circuit chip after packaging.
  • the heat of the infrared sensor affects the measurement accuracy of the infrared sensor element, and the infrared sensor element, the heat insulation layer and the integrated circuit chip are stacked and packaged through the package shell, which can effectively reduce the area occupied by the entire sensor after packaging.
  • FIG. 1 is a cross-sectional view of a digital infrared temperature sensor provided by an embodiment of the present application.
  • FIG. 2 is another cross-sectional view of the digital infrared temperature sensor provided by the embodiment of the present application.
  • FIG. 3 is a cross-sectional view of a digital infrared temperature sensor provided by another embodiment of the present application.
  • FIG. 4 is a cross-sectional view of a digital infrared temperature sensor provided by another embodiment of the present application.
  • FIG. 5 is a cross-sectional view of a digital infrared temperature sensor provided by another embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • the digital infrared temperature sensor 100 provided by the embodiment of the present application includes an integrated circuit chip 110 , an infrared sensing element 120 , a heat insulation layer 130 and a package casing 140 , the infrared sensing element 120 and the integrated circuit chip 140 .
  • 110 are arranged in layers at intervals and are electrically connected; the heat insulating layer 130 is disposed between the integrated circuit chip 110 and the infrared sensing element 120 , and the integrated circuit chip 110 and the infrared sensing element 120 are packaged in the package casing 140 .
  • the infrared sensing element 120 can be a thermopile sensing element, and the infrared sensing element 120 includes an infrared receiving surface 121, which can absorb the infrared energy incident on the infrared receiving surface 121 by using the thermoelectromotive force effect (Seebeck effect), and generate and output electrical signal.
  • the integrated circuit chip 110 may be an ADC (analog-to-digital converter) chip, and the integrated circuit chip 110 is electrically connected to the infrared sensor element 120, and is used to convert the analog signal output by the infrared sensor element 120 into a digital signal after analog-to-digital conversion, so that a digital signal is generated.
  • the digital infrared temperature sensor 100 can directly output digital signals, which is convenient to use.
  • the integrated circuit chip 110 may also be an ASIC (Application Specific Integrated Circuit, application specific integrated circuit) chip, which is used for performing analog-to-digital conversion and correction processing on the analog signal output by the infrared sensor element 120 and then outputting a digital signal.
  • the thermal insulation layer 130 may be a thermal insulation structure made of thermal insulation materials such as glass fiber, polyurethane foam, micro-nano thermal insulation board, or centrifugally peeled fiber cotton.
  • the digital infrared temperature sensor 100 provided by the embodiment of the present application can isolate the space between the integrated circuit chip 110 and the infrared sensing element 120 to a certain extent by disposing the heat insulating layer 130 between the integrated circuit chip 110 and the infrared sensing element 120 .
  • the heat transfer can prevent the heat generated by the integrated circuit chip 110 from affecting the measurement accuracy of the infrared sensor element 120 .
  • the infrared sensor element 120 , the heat insulating layer 130 and the integrated circuit chip 110 are stacked and packaged through the package casing 140 , which can effectively reduce the area occupied by the entire module after packaging.
  • the orthographic projection of the infrared sensing element 120 may fall within the range of the thermal insulation layer 130 .
  • the area of the infrared sensing element 120 is smaller than that of the thermal insulation layer 130 , and the thermal insulation layer 130 can completely cover the infrared sensor.
  • the element 120 prevents the infrared sensor element 120 from being affected by the heat generated by the integrated circuit chip 110 .
  • the heat insulating layer 130 is substantially a flat plate-like structure, and the orthographic projection of the infrared sensor element 120 and the integrated circuit chip 110 can fall within the range of the heat insulating layer 130 , that is, the area of the heat insulating layer 130 is neither greater than or equal to The area equal to the infrared sensor element 120 is also greater than or equal to the area of the integrated circuit chip 110 , which can enhance the heat blocking effect.
  • the digital infrared temperature sensor 100 may further include an ambient temperature sensing element 150 , and the ambient temperature sensing element 150 and the infrared sensing element 120 are located on the same side of the thermal insulation layer 130 , and It is electrically connected to the integrated circuit chip 110 .
  • the ambient temperature sensing element 150 may be a thermistor, such as an NTC (Negative Temperature Coefficient, negative temperature coefficient) thermistor or a thermistor made of other heat-sensitive materials, for measuring the environment where the infrared sensing element 120 is located temperature, that is, the temperature of the cold end of the infrared sensing element 120 .
  • the integrated circuit chip 110 can calibrate the temperature signal detected by the infrared sensing element 120 according to the ambient temperature signal obtained by the ambient temperature sensing element 150 to improve the measurement accuracy.
  • the ambient temperature sensing element 150 and the infrared sensing element 120 are located on the same side of the heat insulating layer 130 , which can avoid thermal interference of the integrated circuit chip 110 on the other side of the heat insulating layer 130 , and accurately measure the location where the infrared sensing element 120 is located. ambient temperature.
  • the digital infrared temperature sensor 100 may further include a thermally conductive layer 160 , the thermally conductive layer 160 is disposed between the thermal insulation layer 130 and the infrared sensing element 120 , and the thermally conductive layer 160 includes a mounting surface 161 , the mounting surface 161 is away from the heat insulating layer 130 , and the infrared sensing element 120 and the ambient temperature sensing element 150 are arranged on the mounting surface 161 .
  • the ambient temperature sensing element 150 can measure the temperature of the cold end of the infrared sensing element 120 more accurately by utilizing the heat conduction effect of the heat conducting layer 160 .
  • the thermally conductive layer 160 may be made of thermally conductive materials such as thermally conductive silicone sheets, alumina ceramic sheets, silicon carbide ceramics, thermally conductive silicone grease, etc.
  • the sensing element 150 may be directly attached to the mounting surface 161 , or may be bonded to the mounting surface 161 through an adhesive layer.
  • the infrared sensing element 120 and the ambient temperature sensing element 150 may be electrically connected to the integrated circuit chip 110 through bonding wires 170 , respectively.
  • the integrated circuit chip 110 , the infrared sensing element 120 and the ambient temperature sensing element 150 can be stacked and assembled first, and then the bonding wire 170 is used to establish the connection between the integrated circuit chip 110 and the infrared sensing element 120 respectively. and the electrical connection between the integrated circuit chip 110 and the ambient temperature sensing element 150 , and finally, the encapsulation material is used to form the encapsulation shell 140 , which is convenient to manufacture.
  • the bonding wire 170 can be an aluminum wire or a gold wire, etc.
  • the bonding wire 170 can be respectively fixed to the infrared sensing element 120 , the ambient temperature sensing element 150 and the integrated circuit chip 110 by welding.
  • the package casing 140 may be provided with a light-transmitting hole 141 , and the light-transmitting hole 141 is opposite to the position of the infrared sensor element 120 .
  • the digital infrared temperature sensor 100 further includes an infrared filter lens 180 , and the infrared filter lens 180 is embedded in the light-transmitting hole 141 .
  • the fact that the light-transmitting hole 141 is opposite to the infrared sensing element 120 may mean that the light-transmitting hole 141 is opposite to the infrared receiving surface 121 of the infrared sensing element 120 , and the infrared filter lens 180 is embedded in the light-transmitting hole 141 for filtering non-infrared
  • the infrared light of a certain wavelength range is transmitted to the infrared receiving surface 121, and the infrared sensing element 120 absorbs the infrared energy incident on the infrared receiving surface 121, and generates and outputs an electrical signal, which can be filtered by the infrared filter lens 180. Eliminate the influence of non-infrared light and improve the accuracy of temperature measurement.
  • the package housing 140 may include a substrate 142 and a face case 143 , and the face case 143 is covered on the substrate 142 and forms an accommodating cavity 144 together with the substrate 142 , the integrated circuit chip 110 , the infrared
  • the sensing element 120 and the heat insulating layer 130 are disposed on the substrate 142 and located in the accommodating cavity 144 , and the heat insulating layer 130 is attached to the integrated circuit chip 110 .
  • the substrate 142 is used to carry the integrated circuit chip 110 .
  • the integrated circuit chip 110 When fabricating the sensor, the integrated circuit chip 110 , the heat insulating layer 130 , the thermal conductive layer 160 , the infrared sensing element 120 and the ambient temperature sensing element 150 can be stacked on the substrate 142 in sequence. , and then form a surface case 143 on the substrate 142 , so that each component can be packaged in the package casing 140 .
  • the surface shell 143 can be made of materials such as plastic, ceramic, or metal, and can be formed by an encapsulation process such as injection molding, ceramic encapsulation, or metal encapsulation.
  • the substrate 142 is generally a plate-like structure, and the substrate 142 may be a resin substrate, a plastic substrate, a ceramic substrate or other substrates.
  • the surface shell 143 may be a cylindrical shape, a rectangular parallelepiped shape or any other shell-shaped structure, and the infrared filter lens 180 and the infrared sensing element 120 may be arranged at intervals.
  • the digital infrared temperature sensor 100 may further include SMD pins (not shown), the SMD pins are disposed on the package housing 140 and exposed outside the package housing 140 , and the SMD pins are integrated with The circuit chip 110 is electrically connected to facilitate outputting the digital signal acquired by the integrated circuit chip 110 .
  • the use of SMD pins can reduce the overall thickness of the sensor.
  • the chip lead can be disposed on the side of the substrate 142 away from the integrated circuit chip 110 , and one end of the chip lead penetrates the substrate 142 and directly extends into the package casing 140 and is electrically connected to the integrated circuit chip 110 .
  • the substrate 142 is provided with connection lines, the SMD pins are arranged on the substrate 142 , and the SMD pins and the integrated circuit chip 110 can be electrically connected through the connection lines in the substrate 142 .
  • the infrared filter lens 180 is stacked on the infrared receiving surface 121 of the infrared sensing element 120 , and the infrared receiving surface 121 faces away from the heat insulating layer 130 ; the package casing 140 is provided with a through hole 147 , the through hole 147 is opposite to the infrared filter lens 180 .
  • the infrared filter lens 180 is directly stacked on the infrared sensor element 120 , and the volume of the package casing 140 can be further reduced by reducing the distance between the infrared filter lens 180 and the infrared sensor element 120 .
  • the infrared filter lens 180 can be embedded in the through hole 147 and be flush with the outer surface of the package housing 140 .
  • the infrared filter lens 180 may also be located in the package housing 140 , and the package housing 140 is provided with a through hole 147 at a position corresponding to the infrared filter lens 180 .
  • the package housing 140 may include a substrate 142 and an encapsulation part 148 , the integrated circuit chip 110 , the heat insulating layer 130 , the thermal conductive layer 160 and the infrared sensor element 120 are stacked on the substrate 142 in sequence, and the encapsulation part 148 is disposed on the substrate 142 and cover the integrated circuit chip 110 , the thermal insulation layer 130 , the thermal conductive layer 160 and the infrared sensor element 120 .
  • the encapsulation portion 148 may be made of a silicone-based material, a thermosetting material, a thermoplastic material, or a UV-treated material.
  • the integrated circuit chip 110 , the heat insulating layer 130 , the thermal conductive layer 160 , the infrared sensor element 120 , and the infrared filter lens 180 may be stacked on the substrate 142 first, and then the substrate 142 is injection molded to form a through hole.
  • the packaging part 148 of 147, the packaging part 148 can be closely attached to each component, so as to minimize the volume of the entire sensor after packaging.
  • the package housing 140 includes a housing body portion 145 and an infrared filter portion 146 , the infrared filter portion 146 is connected to the housing body portion 145 , and the infrared filter portion 146 Opposite to the position of the infrared sensor element 120 .
  • the position of the infrared filter portion 146 and the infrared sensor element 120 being opposite may mean that the infrared filter portion 146 is opposite to the infrared receiving surface 121 of the infrared sensor element 120 .
  • the infrared filter part 146 is used for filtering the incident light in the non-infrared wavelength band, and transmits the infrared light in a certain wavelength range to the infrared receiving surface 121, so as to exclude the influence of the non-infrared light and improve the accuracy of temperature measurement.
  • the package casing 140 also includes a substrate 142 , and the casing main body 145 is covered on the substrate 142 to form an accommodating cavity 144 .
  • the housing main body 145 can be made of opaque silicone resin material, thermosetting material, thermoplastic material or UV treatment material, etc.
  • the infrared filter part 146 can be colored glass, optical glass, quartz that only allows infrared light to pass through Made of glass, plastic, silicon and other materials, the main body part 145 and the infrared filter part 146 can be directly molded at one time in the production process, thereby forming an integrated package shell 140, which further improves the reliability and prolongs its reliability. service life.
  • the encapsulation housing 140 may include a first encapsulation part 191 and a second encapsulation part 192 arranged in layers at intervals, and the heat insulating layer 130 is attached to the first encapsulation part 191 and the second encapsulation part 192 .
  • the first packaging part 191 is provided with a first accommodating cavity 193
  • the integrated circuit chip 110 is provided in the first accommodating cavity 193
  • the second packaging part 192 is provided with a second accommodating cavity 194
  • the infrared sensor element 120 is set in the second receiving cavity 194 . Therefore, the integrated circuit chip 110 and the infrared sensor element 120 are separated by using a package in the form of PoP (Package on Package), which can further block the heat transfer between the integrated circuit chip 110 and the infrared sensor element 120 .
  • PoP Package on Package
  • An electrical connector 195 may also be disposed between the first packaging part 191 and the second packaging part 192 , and the electrical connector 195 is electrically connected to the integrated circuit chip 110 and the infrared sensor element 120 .
  • the first encapsulation part 191 and the second encapsulation part 192 may both include a substrate and a surface case.
  • the integrated circuit chip 110 may be disposed on the substrate of the first packaging part 191 and electrically connected to the circuit in the substrate through the bonding wire 170 .
  • the thermal conductive layer 160 and the infrared sensing element 120 are sequentially stacked on the substrate of the second encapsulation part 192 , and the infrared sensing element 120 is electrically connected to the circuit in the substrate of the second encapsulation part 192 through the bonding wire 170 .
  • the digital infrared temperature sensor further includes an ambient temperature sensing element 150
  • the ambient temperature sensing element 150 may be disposed on the thermally conductive layer 160 and pass through the bonding wire 170 and the circuit in the substrate of the second packaging portion 192 . electrical connection.
  • the electrical connector 195 can be any conductive structure. One end of the electrical connector 195 is electrically connected to the substrate of the first packaging part 191, and the other end is electrically connected to the substrate of the second packaging part 192, so that the infrared sensing elements 120, 192 can be established. Electrical connection between the ambient temperature sensing element 150 and the integrated circuit chip 110 .
  • the integrated circuit chip 110 , the infrared sensing element 120 and the ambient temperature sensing element 150 may be directly electrically connected to the electrical connector 195 , or may be electrically connected to the electrical connector 195 through bonding wires.
  • the embodiment of the present application further provides an electronic device 200.
  • the electronic device 200 includes a housing 210 and a digital infrared temperature sensor 100.
  • the digital infrared temperature sensor 100 is disposed in the housing 210, and the infrared filter lens 180 ( See FIGS. 2 and 3 for details) or the infrared filter portion 146 (see FIG. 4 for details) is exposed outside the casing 210 .
  • the digital infrared temperature sensor 100 can be disposed on the outer surface of the casing 210, so that the infrared filter lens 180 or the infrared filter part 146 is exposed outside the casing 210;
  • the sensor 100 is disposed on the inner wall of the casing 210 , and the infrared filter lens 180 or the infrared filter part 146 is opposite to the temperature measurement window so as to be exposed outside the casing 210 .
  • the electronic device 200 may be a wearable device or a mobile terminal, and the wearable device includes but is not limited to a smart watch, a smart bracelet, a smart clothing, and the like.
  • the embodiments of the present application are described by taking the electronic device 200 as a smart watch as an example, and the housing 210 may be a watch case.
  • the electronic device 200 may further include a display panel 220 and a mainboard.
  • the display panel 220 is disposed in the casing 210 and exposed outside the casing 210 .
  • the mainboard is disposed in the casing 210 and is electrically connected to the integrated circuit chip 110 .
  • the signal displays the temperature value directly on the display screen 220 .
  • the electronic device 200 realizes the temperature detection function through the digital infrared temperature sensor 100.
  • the digital infrared temperature sensor 100 can isolate the heat transfer to a certain extent by disposing the heat insulation layer 130 between the integrated circuit chip 110 and the infrared sensing element 120.
  • the heat generated by the integrated circuit chip 110 is prevented from affecting the measurement accuracy of the infrared sensing element 120, and the infrared sensing element 120, the heat insulating layer 130 and the integrated circuit chip 110 are stacked and packaged through the package shell 140, which can effectively reduce the overall cost of the package after the package.
  • the area occupied by the sensor does not take up too much internal space of the electronic device 200 .
  • the electronic device 200 may also be some other electronic devices with a temperature measurement function, such as a tablet computer, a notebook computer, a human body monitor, etc., which are not specifically limited herein.
  • the electronic device 200 includes the digital infrared temperature sensor 100 in the above-mentioned embodiments, it has all the beneficial effects of the digital infrared temperature sensor 100 , which will not be repeated here.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

Des modes de réalisation de la présente demande concernent un capteur de température infrarouge de type numérique et un dispositif électronique. Le capteur de température infrarouge de type numérique comprend une puce de circuit intégré, un élément de détection infrarouge, une couche d'isolation thermique et un boîtier d'emballage, l'élément de détection infrarouge et la puce de circuit intégré sont disposés sous la forme de couches séparées espacées et sont électriquement connectés ; la couche d'isolation thermique est disposée entre la puce de circuit intégré et l'élément de détection infrarouge et la puce de circuit intégré et l'élément de détection infrarouge sont conditionnés à l'intérieur du boîtier d'emballage. Le capteur de température infrarouge de type numérique selon un mode de réalisation de la présente demande est apte à couper un transfert de chaleur dans une certaine mesure au moyen de la couche d'isolation thermique disposée entre la puce de circuit intégré et l'élément de détection infrarouge, empêchant la chaleur générée par la puce de circuit intégré d'affecter la précision de mesure de l'élément de détection infrarouge après le conditionnement et le capteur de température infrarouge de type numérique utilise un emballage empilé, ce qui permet de réduire efficacement la zone occupée par le capteur dans son ensemble après conditionnement.
PCT/CN2022/072787 2021-02-05 2022-01-19 Capteur de température infrarouge de type numérique et dispositif électronique WO2022166586A1 (fr)

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CN202120335552.3 2021-02-05
CN202120335552.3U CN214843648U (zh) 2021-02-05 2021-02-05 数字式红外温度传感器以及电子设备

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2024054820A1 (fr) * 2022-09-08 2024-03-14 Obsidian Sensors, Inc. Procédés de réduction de bruit et de fabrication de capteur

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CN214843648U (zh) * 2021-02-05 2021-11-23 芯海科技（深圳）股份有限公司 数字式红外温度传感器以及电子设备

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US20110164655A1 (en) * 2008-10-15 2011-07-07 Murata Manufacturing Co., Ltd. Thermal Sensor, Non-Contact Thermometer Device, and Non-Contact Temperature Measurement Method
CN202188910U (zh) * 2011-07-20 2012-04-11 郑国恩 一种智能热释电红外线传感器
CN212320923U (zh) * 2020-09-30 2021-01-08 上海烨映电子技术有限公司 红外测温传感器装置
CN212458679U (zh) * 2020-05-22 2021-02-02 众智光电科技股份有限公司 红外线温度感测器
CN214843648U (zh) * 2021-02-05 2021-11-23 芯海科技（深圳）股份有限公司 数字式红外温度传感器以及电子设备

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CN202188910U (zh) * 2011-07-20 2012-04-11 郑国恩 一种智能热释电红外线传感器
CN212458679U (zh) * 2020-05-22 2021-02-02 众智光电科技股份有限公司 红外线温度感测器
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WO2024054820A1 (fr) * 2022-09-08 2024-03-14 Obsidian Sensors, Inc. Procédés de réduction de bruit et de fabrication de capteur

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