WO2022164407A2

WO2022164407A2 - A low-e coating including double silver and with high transmittance and with increased mechanical resistance

Info

Publication number: WO2022164407A2
Application number: PCT/TR2022/050016
Authority: WO
Inventors: Elcin CAKAR; Erdem ARPAT; Esra CIFCI; Nagihan SEZGIN; Ocal TUNA; Utku ER
Original assignee: Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi
Priority date: 2021-01-27
Filing date: 2022-01-10
Publication date: 2022-08-04
Also published as: WO2022164407A3; EP4288394A2; TR202101223A2

Abstract

The invention relates to a glass having low e-coating that effectively transmits the visible region of the solar energy spectrum while at the same time effectively reflecting the near infrared and infrared region.

Description

A LOW-E COATING INCLUDING DOUBLE SILVER AND WITH HIGH TRANSMITTANCE AND WITH INCREASED MECHANICAL RESISTANCE

TECHNICAL FIELD

The present invention relates to a low-emission (low-e) coating with solar control characteristic with infrared reflective layers used as visible transmittance and thermal insulation glass.

PRIOR ART

One of the factors that differentiate the optical properties of the glasses is the coating applications made on the glass surface. One of the coating applications is the magnetic field- supported sputtering method in a vacuum environment. It is a frequently used method in the production of architectural and automotive coatings with low-e properties. Transmittance and reflection values in the visible, near- infrared, and infrared region of the glasses coated with said method can be obtained at the targeted levels.

The selectivity value is also an important parameter in coated glasses apart from the transmittance and reflection values. Selectivity is defined as the ratio of the visible region transmittance value to the solar factor in ISO 9050 (2003) standard. The selectivity values of the coatings can be kept at the targeted levels with the number of Ag layers, the type of seed layer, and the parametric optimizations of the layers.

The invention with publication number US9499899 discloses systems, methods and apparatus for forming low-emission panels, which may comprise a base and a reflective layer formed on the base. Panels with low-emission may additionally comprise an upper dielectric layer formed on the reflective layer, thereby forming a reflective layer between the upper dielectric layer and the base. The upper dielectric layer may comprise a triple metal oxide, such as zinc tin aluminum oxide. The upper dielectric layer may also comprise aluminum. The concentration of aluminum can be between 1% atomic and 15% atomic or between 2% atomic and 10% atomic. The atomic ratio of zinc to tin in the upper dielectric layer can be between 0.67 and 1 .5 and between 0.9 and 1.1.

BRIEF DESCRIPTION OF THE INVENTION The present invention relates to a glass having low-e coating with solar control characteristic in order to bring new advantages to the related technical field.

An object of the invention is to provide a glass having low-e coating that effectively transmits visible light while at the same time effectively reflecting solar energy.

Another object of the invention is to provide a glass having low-e coating with high transmittance with improved neutrality.

Another object of the invention is to present a glass having low-e coating with high transmittance with reduced heat transmission coefficient.

Another object of the invention is to provide a glass having low-e coating with high transmittance with improved mechanical properties.

The present invention is a glass having low-e coating in order to realize all the purposes that are mentioned above and will emerge from the following detailed description. Accordingly, said invention is characterized in that said low-e coating comprises the following from the glass outwardly, respectively,

- A first dielectric layer selected from Si_xN_y, SiO_xN_y, ZnSnO_x, TiO_x, TiN_x, ZrN_x;

- A second dielectric layer selected from TiO_x, ZrO_x, NbO_x;

- A first seed layer selected from NiCr, NiCrO_x, TiO_x, ZnSnO_x, ZnAIO_x, ZnO_x;

A second seed layer selected from NiCr, NiCrO_x, Ti, TiO_x, ZnAI, ZnSn, ZnSnO_x, SiAl, SiAIN, SiAIO_xN_y,ZnO_x

A first infrared reflective layer;

- A first barrier layer selected from NiCr, NiCrO_x, Ti, TiO_x, ZnAIO_x, ZnO_x;

- A third dielectric layer selected from Si_xN_y, TiN_x, ZrN_x, ZnSnO_x, ZnAIO_x, SiO_xN_y, TiO_x, ZnO_x;

- A fourth dielectric layer selected from Si_xN_y, TiN_x, ZrN_x, ZnSnOx, ZnAIOx, SiO_xN_y, TiO_x, ZnO_x;

- A third seed layer selected from NiCr, NiCrOx, TiO_x, ZnAIOx, ZnSnOx, ZnO_x; A second infrared reflective layer;

- A second barrier layer selected from NiCr, NiCrOx, Ti, TiO_x, ZnAIOx, ZnO_x

- A fifth dielectric layer selected from ZnSnOx, ZnAIOx, SiO_xN_y, ZrOx, SiO_x, Si_xN_y, TiOx, ZnO_x;

- An upper dielectric layer comprising SiO_xN_y. The glass having low-e coating according to another preferred embodiment of the invention is characterized by the following; the thickness of the first dielectric layer is in the range of 10 nm - 20 nm, the thickness of the second dielectric layer is in the range of 2 nm - 8 nm, the thickness of the first seed layer is in the range of 18 nm - 30 nm, the thickness of the second seed layer is in the range of 0.3 nm - 1 .2 nm, the thickness of the first infrared reflective layer is in the range of 6 nm - 20 nm, the thickness of the first barrier layer is in the range of 1 .6 nm - 2.5 nm, the thickness of the third dielectric layer is in the range of 11 nm - 27 nm, the thickness of the fourth dielectric layer is in the range of 35 nm - 55 nm, the thickness of the third seed layer is in the range of 18 nm - 30 nm, the thickness of the second infrared reflective layer is in the range of 6 nm - 20 nm, the thickness of the second barrier layer is in the range of 1 .6 nm - 2.5 nm, the thickness of the fifth dielectric layer is in the range of 14 nm - 29 nm, the thickness of the upper dielectric layer is in the range of 10 nm - 25 nm.

The glass having low-e coating according to a preferred embodiment of the invention is characterized in that it comprises the following;

- A first dielectric layer comprising Si_xN_y ;

- A second dielectric layer comprising TiO_x;

- A first seed layer comprising ZnAIO_x;

- A second seed layer comprising NiCr;

A first infrared reflective layer comprising Ag;

- A first barrier layer comprising NiCrO_x;

A third dielectric layer comprising ZnAIO_x;

- A fourth dielectric layer comprising Si_xN_y;

- A third seed layer comprising ZnAIO_x;

A second infrared reflective layer comprising Ag;

- A second barrier layer comprising NiCrO_x; A fifth dielectric layer comprising ZnAIO_x;

- An upper dielectric layer comprising SiO_xN_y. Thus, the mechanical resistance of the low-e coating is increased.

In a preferred embodiment of the invention, the glass having low-e coating is characterized in that said low-e coating is as follows from the glass outwardly, respectively; the first dielectric layer comprising Si_xN_y is in the thickness range of 10 nm - 18 nm; the second dielectric layer comprising TiO_x is in the thickness range of 2 nm - 6 nm; the first seed layer comprising ZnAIO_x is in the thickness range of 19 nm - 27 nm; the second seed layer comprising NiCr is in the thickness range of 0.3 nm - 1 .0 nm; the first infrared reflective layer comprising Ag is in the thickness range of 7 nm - 19 nm; the first barrier layer comprising NiCrO_x is in the thickness range of 1 .7 nm - 2.4 nm; the third dielectric layer comprising ZnAIO_x is in the thickness range of 13 nm - 24 nm; the fourth dielectric layer comprising Si_xN_y is in the thickness range of 40 nm - 52 nm; the third seed layer comprising ZnAIO_x is in the thickness range of 19 nm - 27 nm; the second infrared reflective layer comprising Ag is in the thickness range of 7 nm - 19 nm; the second barrier layer comprising NiCrO_x is in the thickness range of 1.7 nm - 2.4 nm; the fifth dielectric layer comprising ZnAIO_x is in the thickness range of 16 nm - 27 nm;

- the upper dielectric layer comprising SiO_xN_y is in the thickness range of 12 nm - 21 nm.

BRIEF DESCRIPTION OF THE FIGURES

Figure 1 shows the general view of the low-e layer sequence.

REFERENCE NUMBERS GIVEN IN THE FIGURE

10 Glass

101 Low-e coating

20 Under dielectric structure

201 First dielectric layer

202 Second dielectric layer

21 Seed structure 211 First seed layer

212 Second seed layer

22 First infrared reflective layer

23 First barrier layer

24 Intermediate dielectric structure

241 Third dielectric layer

242 Fourth dielectric layer

243 Third seed layer

25 Second infrared reflective layer

26 Second barrier layer

27 Upper dielectric structure

271 Fifth dielectric layer

272 Upper dielectric layer

DETAILED DESCRIPTION OF THE INVENTION

The glass (10) having low-e coating (101) of the invention, is explained with examples that do not have any limiting effect only for a better understanding of the subject in this detailed description.

The production of glasses (10) having low-e coating (101) for architecture and automotive is carried out by the “sputtering” method. The present invention generally relates to double silver glasses (10) having low-e coating (101 ) with high heat treatment resistance used as visible transmittance and thermal insulation glass (10), the content and application of said low-e coating (101). The glass (10) having low-e coating (101) of the invention, can be used in heat glass units and laminated structures for the architectural and automotive sectors.

A low-e coating (101) consisting of a plurality of metal, metal oxide and/or metal nitride/oxynitride layers located on the surface of the glass (10) using the sputtering method was developed to obtain a glass (10) having low-e coating (101 ) with a high level of visible light transmittance, heat treatable design and solar control characteristic to be applied to the surface of a glass (10) in this invention. Said layers are deposited on each other in a vacuum, respectively. As heat treatment; at least one and/or several of the other heat treatments can be used together, including but not limited to tempering, partial tempering, annealing, bending, lamination, laser and instantaneous beam radiation (flashlamp). The glass (10) having low-e coating (101) with solar control characteristic of the invention can be used as an architectural and automotive glass (10). The following data were determined as a result of experimental studies in order to improve a low-e coating (101 ) sequence with heat treatable, solar control characteristic both in terms of ease of production and optical properties.

The solar energy spectrum is a first infrared reflective layer (22) and a second infrared reflective layer (25) that allows to pass the visible region (hereinafter referred to as T_ViS %) at the targeted level and reflect (by passing less) the thermal radiation in the infrared region in the low-e coating (101 ) of the invention. The Ag layer is used as the first infrared reflective layer (22) and the second infrared reflective layer (25), and the heat emission is low.

The refractive indices of all layers were determined by using computational methods over the optical constants obtained from the single layer measurements in the glass (10) having low-e coating (101 ) of the invention. Said refractive indices are refractive index data at 550 nm.

There is an under dielectric structure (20) in contact with the glass (10) in the low-e coating (101 ) of the invention. A first dielectric layer (201 ) is used as the lowest layer in said under dielectric structure (20). Said first dielectric layer (201 ) comprises at least one of Si_xN_y, SiOxN_y, ZnSnOx, TiO_x, TiN_x, ZrN_x materials. The first dielectric layer (201 ) comprises Si_xN_y in the preferred embodiment. The first dielectric layer (201 ) comprising Si_xN_y serves the purpose of inhibiting the migration of alkali ions facilitated at high temperature by acting as a diffusion barrier. Thus, the first dielectric layer (201 ) comprising Si_xN_y supports the resistance of the low-e coating (101 ) to the heat treatment processes. The change interval for the refractive index of the first dielectric layer (201 ) comprising Si_xN_y is between 2.00 and 2.15. The change interval for the refractive index of the first dielectric layer (201 ) comprising Si_xN_y is 2.02 to 2.12 in the preferred structure.

The thickness of the first dielectric layer (201 ) comprising Si_xN_y is between 10 nm - 20 nm. The thickness of the first dielectric layer (201 ) comprising Si_xN_y is between 10 nm - 18 nm in the preferred embodiment. The thickness of the first dielectric layer (201 ) comprising Si_xN_y is between 12 nm - 17 nm in an even more preferred embodiment.

At least one seed structure (21 ) is positioned between the under dielectric structure (20) and the Ag layer, which is the first infrared reflective layer (22). Said seed structure (21 ) comprises a first seed layer (21 1 ) and a second seed layer (212). The second seed layer (212) is in contact with the first infrared reflective layer (22). Said first seed layer (21 1 ) comprises at least one of NiCr, NiCrO_x, TiO_x, ZnSnOx, ZnAIOx, ZnO_x. The first seed layer (211 ) comprises ZnAIOx in the preferred embodiment. The thickness of the first seed layer (21 1 ) between from 18 nm - 30 nm. The thickness of the first seed layer (211 ) is between 19 nm - 27 nm in the preferred embodiment. The thickness of the first seed layer (21 1 ) is between 20 nm - 25 nm in an even more preferred embodiment.

A second dielectric layer (202) is positioned between the first seed layer (211 ) and the first dielectric layer (201 ) comprising Si_xN_y. Said second dielectric layer (202) comprises at least one of the TiO_x, ZrO_x, NbO_x layers. TiO_x is used as the second dielectric layer (202) in the preferred embodiment. Since TiO_x is a material with a high refractive index, it provides the same optical performance with less total physical thickness and plays a role in increasing the Tvis % value of low-e coating (101 ). The refractive index of the TiO_x layer is between 2.40 and 2.60. It was determined as 2.45 - 2.55 in the preferred embodiment. The thickness of the TiOx layer, which is the second dielectric layer (202), is between 2 nm - 8 nm. The thickness of the TiOx layer is between 2 nm - 6 nm in the preferred embodiment. The thickness of the TiOx layer is between 2 nm - 5 nm in an even more preferred embodiment.

When the first dielectric layer (201 ) comprising Si_xN_y, and the TiO_x layer, the second dielectric layer (202), which are the first and second layers after the glass are used together, optimum performance can be optimized by using the first dielectric layer (201 ) comprising the thinner Si_xN_y, thanks to the high refractive index of the TiO_x layer, the second dielectric layer (202). In the case of falling short or exceeding the specified thickness values, significant changes are observed in the color and optical performance of the glass (10) having low-e coating (101 ). These are the a* and b* values in the CIELAB color space among the color values.

A second seed layer (212) is positioned between the first seed layer (21 1 ) and the first infrared reflective layer (22). Said second seed layer (212) comprises at least one of the materials NiCr, NiCrOx, Ti, TiO_x, ZnAI, ZnSn, ZnSnOx, SiAl, SiAIN, SiAIO_xN_y, ZnO_x. NiCr with metallic structure is used as the second seed layer (212) in the preferred embodiment. The thickness of NiCr layer, the second seed layer (212), is in the range of 0.3 nm - 1.2 nm. Thus, a glass (10) having low-e coating (101 ) with high transmittance and high mechanical resistance can be obtained. The thickness of NiCr layer, the second seed layer (212), is in the range of 0.3 nm - 1.0 nm. Thus, it is easier to provide high transmittance in the final product after heat treatment. Most preferably, the thickness of NiCr layer, the second seed layer (212), is between 0.4 nm - 0.9 nm. Thus, it is easier to increase the mechanical resistance of the glass (10) having low-e coating (101 ) after heat treatment at a sufficient level in addition to obtaining it with high transmittance.

There is an intermediate dielectric structure (24) that separates the first infrared reflective layer (22) and the second infrared reflective layer (25) by positioning between the first infrared reflective layer (22) and the second infrared reflective layer (25) and ensures that the sequence of low-e layer (101 ) reaches the targeted performance. The intermediate dielectric structure (24) comprises at least one dielectric layer. The intermediate dielectric structure

(24) comprises at least one dielectric layer and at least one third seed layer (243) positioned adjacent to the dielectric layer in one embodiment of the invention. The third seed layer (243) comprises at least one of the materials NiCr, NiCrOx, TiO_x, ZnSnOx, ZnAIOx, ZnO_x. Preferably, the third seed layer (243) comprises ZnAIOx.

The intermediate dielectric layer structure (24) comprises at least two dielectric layers selected from Si_xN_y, TiN_x, ZrN_x, ZnSnOx, ZnAIOx, SiAIN_x, SiAIO_xN_y, SiO_xN_y, TiO_x, ZnO_x in the preferred embodiment of the invention. The two selected dielectric layers are in contact with each other. The intermediate dielectric structure (24) comprises a third dielectric layer (241 ), a fourth dielectric layer (242), and a third seed layer (243) together. The intermediate dielectric structure (24) is positioned to directly contact the second infrared reflective layer

(25), the Ag layer. The preferred embodiment of the invention comprises ZnAIOx as the third dielectric layer (241 ) and Si_xN_y as the fourth dielectric layer (242). The thickness of the layer comprising ZnAIOx, the third dielectric layer (241 ) is between 1 1 nm - 27 nm. The thickness of the layer comprising ZnAIOx, the third dielectric layer (241 ), is between 13 nm - 24 nm in the preferred embodiment. The thickness of the layer comprising ZnAIOx, the third dielectric layer (241 ), is in the range of 15 nm - 20 nm in an even more preferred embodiment. The thickness of the fourth dielectric layer (242) comprising Si_xN_y is between 35 nm - 55 nm. The thickness of the fourth dielectric layer (242) comprising Si_xN_y is between 40 nm - 52 nm in the preferred embodiment. The thickness of the fourth dielectric layer (242) comprising Si_xN_y is between 43 nm - 50 nm in an even more preferred embodiment.

The thickness of layer comprising ZnAIOx, the third seed layer (243), is between 18 nm - 30 nm. The thickness of the layer comprising ZnAIOx, the third seed layer (243), is between 19 nm - 27 nm in the preferred embodiment. The thickness of layer comprising ZnAIOx, the third seed layer (243) is between 20 nm - 25 nm in an even more preferred embodiment.

The glass (10) side and the coating side reflectance and color values create more options for obtaining the targeted values by optimizing separately the thicknesses and structures of the dielectric layers comprised in said intermediate dielectric structure (24). The intermediate dielectric structure (24) being in sandwich form is necessary to optimize the targeted reflection and color values, as well as to improve the optoelectronic properties of the second infrared reflective layer (25), the Ag layer.

Such as;

If the intermediate dielectric structure (24) consists of a single and thick layer, the intermediate dielectric structure (24), which is intended to be amorphous, is more likely to show a partially and/or completely crystalline structure. It is preferred that the layer used as a seed layer in direct contact with Ag, the second infrared reflective layer (25), grows on the layer contacting the other surface of the layer itself, while the layer in which it grows is in an amorphous structure so that it is not adversely affected by the crystallization of the layer in which it grows. The second infrared reflective layer (25) comprising Ag and the third seed layer (243) comprising ZnAIO_x are in direct contact in the invention. The fourth dielectric layer (242) comprising Si_xN_y in the amorphous structure contacts the other surface of the third seed layer (243) comprising ZnAIOx. If the intermediate dielectric structure (24) consists of a third seed layer (243) comprising a single, thick ZnAIOx, the surface roughness of the third seed layer (243) that is the crystal will be increased. Increased surface roughness will contribute positively to the mechanical resistance of the glass (10) having low-e coating (101 ), but will reduce the rate of infrared reflectance of the second infrared reflective layer (25) located on the third seed layer (243). The layer thicknesses, layer contents, and sequence order in the low-e coating (101) need to be optimized as described in this invention in order to obtain all of the mechanical and optical properties for this reason. Thus, a problem such as the mismatch of the crystal and therefore the crystallization of the structure of the third seed layer (243) is affected and the possibility of unwanted residual stress are reduced. The sensitivity of the third seed layer (243) enables the second infrared reflective layer (25) to grow in the crystallographic orientation it should be. The intermediate dielectric structure (24) has a total thickness between 64 nm - 112 nm. The intermediate dielectric structure (24) has a total thickness between 72 nm - 103 nm in the preferred embodiment. Even more preferably, the intermediate dielectric structure (24) has a total thickness between 78 nm - 95 nm.

A first barrier layer (23) is positioned above the first infrared reflective layer (22) and a second barrier layer (26) is positioned above the second infrared reflective layer (25). The first barrier layer (23) and the second barrier layer (26) comprise at least one of the materials NiCr, NiCrOx, Ti, TiO_x, ZnAIOx, ZnO_x. NiCrO_x is used as the first barrier layer (23) and the second barrier layer (26) in the preferred embodiment. The thickness of the first barrier layer (23) comprising NiCrO_x and the second barrier layer (26) comprising NiCrO_x are in the range of 1.6 nm - 2.5 nm. The thickness of the first barrier layer (23) comprising NiCrOx and the second barrier layer (26) comprising NiCrOx are in the range of 1.7 nm - 2.4 nm in the preferred embodiment. The thickness of the first barrier layer (23) comprising NiCrOx and the second barrier layer (26) comprising NiCrOx are between 1.8 nm - 2.3 nm in the preferred embodiment.

The first barrier layer (23) comprising NiCrOx and the second barrier layer (26) comprising NiCrOx are used to prevent the Ag layers from being affected by the process gases used for the production of the subsequent layers from the Ag layers, which are the first infrared reflective layer (22) and the second infrared reflective layer (25). Meanwhile, NiCrOx layers eliminate the possible adhesion weakness before heat treatment by providing structural harmony in the metallic and dielectric transition between the dielectric layers that will come after the Ag layers. In addition, NiCrOx layers are primarily oxidized in heat treatment processes such as tempering, bending, etc. and thus prevent the Ag layers from being oxidized and subjected to structural deterioration.

An upper dielectric structure (27) is positioned on the second barrier layer (26). The upper dielectric structure (27) comprises a fifth dielectric layer (271 ) and an upper dielectric layer (272). The fifth dielectric layer (271 ) comprises at least one of ZnSnO_x, ZnAIO_x, SiO_xN_y, ZrOx, SiOx, SixNy, TiO_x, ZnO_x.

Where the upper dielectric layer (272) comprising SiO_xN_y is used in direct contact with the second barrier layer (26) comprising NiCrOx, said layers exhibit incompatible behavior, poor mechanical, and heat treatment resistance. A fifth dielectric layer (271 ) is added between the second barrier layer (26) comprising NiCrOx and the upper dielectric layer (272) comprising SiOxN_y to in low-e coating (101 ) of the patent ensure that the low-e coating (101 ) exhibits stable heat treatment behavior for this purpose. The fifth dielectric layer (271 ) comprises ZnAIOx. The thickness of the fifth dielectric layer (271 ) comprising ZnAIOx is between 14 nm - 29 nm. The thickness of the fifth dielectric layer (271 ) comprising ZnAIOx is between 16 nm - 27 nm in the preferred embodiment. The thickness of the fifth dielectric layer (271 ) comprising ZnAIOx is between 18 nm - 25 nm in an even more preferred embodiment.

When the upper dielectric layer (272) comprising SiO_xN_y is used instead of the upper dielectric layer (272) comprising SiO_xN_y, the same optical behavior can be achieved with a layer comprising thicker SiO_xN_y because the refractive index of SiO_xN_y is lower than Si_xN_y. Thus, the mechanical resistance of the coating is increased by using a thicker upper dielectric layer (272). The thickness of the upper dielectric layer (272) comprising SiO_xN_y is between 10 nm - 25 nm. The thickness of the upper dielectric layer (272) comprising SiO_xN_y is between 12 nm - 21 nm in the preferred embodiment. The thickness of the upper dielectric layer (272) comprising SiO_xN_y is between 13 nm - 20 nm.

The refractive index ranges of the first seed layer (211) the third dielectric layer (241), the third seed layer (243) and the fifth dielectric layer (271) comprising ZnAIO_x are 1.93 - 2.13. The refractive index ranges of the first seed layer (211), the third dielectric layer (241 ), the third seed layer (243), and the fifth dielectric layer (271 ) comprising ZnAIO_x are 1.98 - 2.08 in the preferred embodiment.

The thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 6 nm - 20 nm in order to obtain the targeted transmittance and reflection values for products having low-e coating (101) of the invention for architectural and automotive use. The thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 7 nm - 19 nm in the preferred embodiment. More specifically, the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 8 nm - 18 nm in order to achieve both the targeted performance value and the desired color properties and low inward and outward reflective values in the visible region. The product must have two separate infrared reflective layers comprising Ag independent from each other in order to achieve the targeted selectivity and optical performance. The ratio of the thickness of the first infrared reflective layer (22) and the second infrared reflective layer (25) to each other is between 0.5 and 1.3. Preferably, the ratio of the thickness of the first infrared reflective layer (22) and the second infrared reflective layer (25) to each other is between 0.6 and 1.1.

The targeted performance value with the layer sequence described above is preferred to be between 60% and 73% of the visible region transmittance value before heat treatment for the use of 6 mm lower glass (10) as a single glass (10). It should be between 62% and 68% in a more preferred embodiment. It is preferred that the direct solar transmittance value before heat treatment is between 31% and 43% for the use of 6 mm lower glass (10) as a single glass (10). It should be between 34% and 41% in the more preferred embodiment. In addition, the optimization of all other dielectric layers should support the achievement of this performance. The properties of the upper dielectric layer (272) of the low-e coating (101) are very important in terms of the storage life, heat treatability, resistance and visual aesthetics of the glass (10) having low-e coating (101) since it determines the character of the coated glass (10) during heat treatment.

A further role of the first barrier layer (23) and the second barrier layer (26) is that the optoelectronic properties of the first infrared reflective layer (22) and the second infrared reflective layer (25) of the low-e coating (101) are stable throughout the secondary operations and lifetime. The coating conditions of the first barrier layer (23) and the second barrier layer (26) of the low-e coating (101) are another critical parameter that determines the character of the coated glass (10) during heat treatment and affects the opto-electronic properties of the glass (10) having low-e coating (101). The absorption behavior of the first barrier layer (23) and the second barrier layer (26) in the low-e coating (101) should be minimized by improving the material property for the targeted T_ViS % value.

The glass (10) having low-e coating (101 ) defined above allows obtaining thermal insulation units with neutral color values. The reflection a* and b* values remain between 0 and -10, ensuring neutrality when the surface normality on the uncoated side of the glass (10) having low-e coating (101) obtained after heat treatment is examined with 0° in the CIELAB color space.

The glass (10) having low-e coating (101) defined above preserves the neutral color values at different observation angles. The reflection a* and b* values vary at most ±2 degrees at the observation angles up to -60° from the surface normal on the uncoated side of the glass (10) having low-e coating (101) obtained after heat treatment in the CIELAB color space. The above-mentioned neutrality is also preserved in different observation angles in this way.

The presence of the second seed layer (212) positioned under the first infrared reflective layer (22) increases the adhesion and scratch resistance observed after heat treatment.

Band test, brush test and scrubbing test are used as mechanical adhesion and scratch tests. The band test is performed according to ASTM 3359 standards. The test is a test in which deformations on the coating surface are measured as a result of adhering the 3M Scotch adhesive tape to the coating in 15 mm x 100 mm dimensions and removing it at once in line with the surface normal after a certain period of time. Brush test is a test in which deformations on the surface are measured by passing the glass (10) having low-e coating (101) under the brush in the glass washing machines at once and keeping it brushed for 1 minute.

Scrubbing test is a test in which the deformations on the surface are measured by scrubbing the same area of the powder-free paper on which isopropyl alcohol is applied on the coated glass surface for a certain time and repetition, preferably 10 repetitions.

Samples taken from the coated glass were subjected to an automated test to observe the scratch and peel resistance of the coating. It is ensured that the printing piece placed on an arm end capable of reciprocating movement on the horizontal axis moves on the coated glass samples by placing a certain weight on it. Between the printing piece and the coated glass surface, a SDC Enterprises cloth is placed made of cotton fabric known as “cotton lawn rubbing fabric” in the art in accordance with ISO105-F9 standard. 2 ml of distilled water is dripped on the coated glass surface subject to the test and the reciprocating movement is performed 50 times by applying 0.126N/mm² pressure. This test, which is defined, is called “automatic wet scrubbing test”. Scratches and protrusions in the coating are analyzed visually as a result of the test.

In order for the low-e coating (101) to be mechanically resistant to the processes during the secondary processes, it must have successfully passed these tests. A small number of capillary scratches are allowed on the coating surface viewed from a distance of maximum of 30 cm under a strong light source in the scrubbing, band, brush and automatic wet scrubbing tests performed after the product has been tempered. The acceptance criterion for the coated samples to pass the test, is that no scratches are formed when all the results obtained after repeated tests are evaluated. The sample cannot pass the tests in case of any peeling, tearing and delamination.

Glass (10) having low e-coating (101 ) cannot successfully pass the tests described above when the second seed layer (212) is used below the above-mentioned thickness value. When the second seed layer (212) located under the first infrared reflective layer (22) is used in the specified thickness ranges, provided that all the above-mentioned layers related to the glass (10) having low e-coating (101) of the invention are used in the specified order and thickness ranges, the double silver glass (10) having low e-coating (101) of the invention can pass these tests successfully. The use of the second seed layer (212) is of importance for the mechanical resistance of the glass (10) having low e-coating (101) of the invention. The scope of protection of the invention is specified in the attached claims and cannot be limited to those explained for sampling purposes in this detailed description. It is evident that a person skilled in the art may exhibit similar embodiments in light of above-mentioned facts without departing from the main theme of the invention.

Claims

CLAIMS A heat treatable glass (10) having low e-coating (101 ) characterized in that; said low-e coating (101 ) comprises the following from the glass (10) outwardly, respectively;

- A first dielectric layer (201 ) selected from Si_xN_y, SiO_xN_y, ZnSnO_x, TiO_x, TiN_x, ZrN_x;

- A second dielectric layer (202) selected from TiO_x, ZrO_x, NbO_x

- A first seed layer (21 1 ) selected from NiCr, NiCrO_x, TiO_x, ZnSnO_x, ZnAIO_x, ZnO_x; A second seed layer (212) selected from NiCr, NiCrO_x, Ti, TiO_x, ZnAI, ZnSn, ZnSnO_x, SiAl, SiAIN, SiAIO_xN_y, ZnO_x;

A first infrared reflective layer (22);

- A first barrier layer (23) selected from NiCr, NiCrOx, Ti, TiO_x, ZnAIO_x, ZnO_x;

- A third dielectric layer (241 ) selected from Si_xN_y, TiN_x, ZrN_x, ZnSnOx, ZnAIOx, SiAIN_x, SiAIOxN_y, SiO_xN_y, TiO_x, ZnO_x;

- A fourth dielectric layer (242) selected from Si_xN_y, TiN_x, ZrN_x, ZnSnOx, ZnAIOx, SiOxN_y, TiOx, ZnO_x;

- A third seed layer (243) selected from NiCr, NiCrOx, TiO_x, ZnSnOx, ZnAIOx, ZnO_x;

- A second infrared reflective layer (25);

- A second barrier layer (26) selected from NiCr, NiCrOx, Ti, TiO_x, ZnAIOx, ZnO_x;

- A fifth dielectric layer (271 ) selected from ZnSnOx, ZnAIOx, SiO_xN_y, ZrOx, SiO_x, SixN_y, TiOx, ZnO_x;

- An upper dielectric layer (272) comprising SiO_xN_y. A glass having low e-coating according to claim 1 , characterized by the following; the thickness of the first dielectric layer (201 ) is in the range of 10 nm - 20 nm, the thickness of the second dielectric layer (202) is in the range of 2 nm - 8 nm, the thickness of the first seed layer (21 1 ) is in the range of 18 nm - 30 nm, the thickness of the second seed layer (212) is in the range of 0.3 nm - 1 .

2 nm, the thickness of the first infrared reflective layer (22) is in the range of 6 nm - 20 nm, the thickness of the first barrier layer (23) is in the range of 1 .6 nm - 2.5 nm, the thickness of the third dielectric layer (241 ) is in the range of 1 1 nm - 27 nm, the thickness of the fourth dielectric layer (242) is in the range of 35 nm - 55 nm, the thickness of the third seed layer (243) is in the range of 18 nm - 30 nm, the thickness of the second infrared reflective layer (25) is in the range of 6 nm - 20 nm, the thickness of the second barrier layer (26) is in the range of 1 .6 nm - 2.5 nm, the thickness of the fifth dielectric layer (271 ) is in the range of 14 nm - 29 nm, the thickness of the upper dielectric layer (272) is in the range of 10 nm - 25 nm.

3. A glass having low e-coating according to claim 1 , characterized in that it comprises the following;

- A first dielectric layer (201 ) comprising Si_xN_y ;

- A second dielectric layer (202) comprising TiO_x;

- A first seed layer (21 1 ) comprising ZnAIO_x;

- A second seed layer (212) comprising NiCr;

A first infrared reflective layer (22) comprising Ag;

- A first barrier layer (23) comprising NiCrO_x;

A third dielectric layer (241 ) comprising ZnAIO_x;

- A fourth dielectric layer (242) comprising Si_xN_y ;

- A third seed layer (243) comprising ZnAIO_x;

- A second infrared reflective layer (25) comprising Ag;

- A second barrier layer (26) comprising NiCrO_x;

A fifth dielectric layer (271 ) comprising ZnAIO_x;

- A upper dielectric layer (272) comprising SiO_xN_y.

4. A glass having low e-coating according to any one of the preceding claims, said low-e coating (101 ) characterized by the following from the glass (10) outwardly, respectively; the first dielectric layer (201 ) comprising Si_xN_y is in the thickness range of 10 nm - 18 nm; the second dielectric layer (202) comprising TiO_x is in the thickness range of 2 nm - 6 nm; the first seed layer (21 1 ) comprising ZnAIO_x is in the thickness range of 19 nm - 27 nm; the second seed layer (212) comprising NiCr is in the thickness range of 0.3 nm - 1.0 nm; the first infrared reflective layer (22) comprising Ag is in the thickness range of 7 nm - 19 nm; the first barrier layer (23) comprising NiCrO_x is in the thickness range of 1.7 nm - 2.4 nm; the third dielectric layer (241 ) comprising ZnAIO_x is in the thickness range of 13 nm - 24 nm; - the fourth dielectric layer (242) comprising Si_xN_y is in the thickness range of 40 nm - 52 nm; the third seed layer (243) comprising ZnAIO_x is in the thickness range of 19 nm - 27 nm;

- the second infrared reflective layer (25) comprising Ag is in the thickness range of 7 nm - 19 nm;

- the second barrier layer (26) comprising NiCrO_x is in the thickness range of 1.7 nm - 2.4 nm; the fifth dielectric layer (271 ) comprising ZnAIOx is in the thickness range of 16 nm - 27 nm;

- the upper dielectric layer (272) comprising SiO_xN_y is in the thickness range of 12 nm - 21 nm.

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