WO2019132824A1 - Low-e coated glass - Google Patents

Low-e coated glass Download PDF

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Publication number
WO2019132824A1
WO2019132824A1 PCT/TR2018/050662 TR2018050662W WO2019132824A1 WO 2019132824 A1 WO2019132824 A1 WO 2019132824A1 TR 2018050662 W TR2018050662 W TR 2018050662W WO 2019132824 A1 WO2019132824 A1 WO 2019132824A1
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WO
WIPO (PCT)
Prior art keywords
layer
dielectric layer
znaiox
nicrox
nicr
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PCT/TR2018/050662
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French (fr)
Inventor
Alperen SEZGIN
Sinem ERASLAN
Tuncay TURUTOGLU
Seniz TURKUZ
Original Assignee
Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi
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Application filed by Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi filed Critical Turkiye Sise Ve Cam Fabrikalari Anonim Sirketi
Publication of WO2019132824A1 publication Critical patent/WO2019132824A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3639—Multilayers containing at least two functional metal layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings

Definitions

  • the present invention relates to a low emissivity (low-e) coating having infrared reflective layers therein and used as thermal isolation glass and which transmits daylight and having high thermal process resistance.
  • One of the factors which differentiate optic characteristics of glasses is the coating applications which are applied onto the glass surface.
  • One of the coating applications is the magnetic field supported sputtering method in vacuum medium. This is a method frequently used particularly in the production of architecture and automotive coatings having low-e characteristic. By means of said method, the transmittance and reflection values of the coated glasses in the visible, near infrared and infrared region of the solar energy spectrum can be obtained at the targeted levels.
  • selectivity value is also an important parameter in coated glasses.
  • selectivity is defined as the ratio of the transmittance value of the visible region to the solar factor.
  • the selectivity values of coatings can be kept at the targeted levels by means of the number of Ag layers included, the type of the seed layer used, dielectric layer combinations which decrease reflection, and the parametric optimizations of the layers.
  • low-emissivity stacks are being characterized by a low solar heat gain coefficient (SHGC), mechanical and chemical durability, and a tolerance for tempering or heat strengthening.
  • SHGC solar heat gain coefficient
  • Said low-e coatings comprise two silver layers which are independent from each other, and on these silver layers, NiCr is positioned both in oxide and metal forms from the glass towards atmosphere.
  • the present invention relates to a low-e coated glass, for bringing new advantages to the related technical field.
  • the main object of the present invention is to provide a low-e coated glass whose angular color change is reduced.
  • Another object of the present invention is to provide a low-e coated glass whose visible region reflection is reduced.
  • the present invention is a heat treatable low-e coated glass developed for use in architecture and automotive fields. Accordingly the followings are respectively positioned outwardly from the glass:
  • a first dielectric layer comprising at least one of SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx,
  • a first seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx,
  • an absorbing layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
  • a barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
  • a third dielectric layer selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx,
  • a fourth dielectric layer comprising at least one of SixNy, TiNx, ZrNx,
  • a second seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx, a second infrared reflective layer,
  • a second barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
  • a fifth dielectric layer selected from ZnSnOx, ZnAIOx, SiOxNy, SiOx, SixNy, TiOx,
  • an upper dielectric layer comprising SiOxNy.
  • the followings are respectively positioned outwardly from the glass:
  • - first dielectric layer comprising at least one of SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx,
  • a second dielectric layer selected from TiOx, ZrOx, NbOx,
  • first seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx,
  • absorbing layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
  • barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
  • - third dielectric layer selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx, - fourth dielectric layer comprising at least one of SixNy, TiNx, ZrNx, second seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx,
  • second barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
  • fifth dielectric layer selected from ZnSnOx, ZnAIOx, SiOxNy, SiOx, SixNy, TiOx,
  • upper dielectric layer comprising SiOxNy.
  • the followings are respectively positioned outwardly from the glass:
  • absorbing layer selected from NiCr, NiCrOx,
  • barrier layer selected from NiCr, NiCrOx,
  • fourth dielectric layer comprising SixNy,
  • second seed layer comprising ZnAIOx
  • second barrier layer selected from NiCr, NiCrOx,
  • upper dielectric layer comprising SiOxNy.
  • the followings are respectively positioned outwardly from the glass:
  • barrier layer selected from NiCr, NiCrOx,
  • fourth dielectric layer comprising SixNy,
  • second seed layer comprising ZnAIOx
  • second barrier layer selected from NiCr, NiCrOx, - fifth dielectric layer comprising ZnAIOx,
  • upper dielectric layer comprising SiOxNy.
  • the followings are respectively positioned outwardly from the glass:
  • barrier layer selected from NiCr, NiCrOx,
  • fourth dielectric layer comprising SixNy,
  • second seed layer comprising ZnAIOx
  • second barrier layer selected from NiCr, NiCrOx,
  • upper dielectric layer comprising SiOxNy.
  • the followings are respectively positioned outwardly from the glass:
  • barrier layer comprising NiCr
  • fourth dielectric layer comprising SixNy,
  • second seed layer comprising ZnAIOx
  • second barrier layer selected from NiCr, NiCrOx,
  • upper dielectric layer comprising SiOxNy.
  • first dielectric layer comprising SixNy
  • barrier layer comprising NiCrOx
  • third dielectric layer comprising ZnAIOx
  • fourth dielectric layer comprising SixNy,
  • second seed layer comprising ZnAIOx
  • second barrier layer selected from NiCr, NiCrOx,
  • upper dielectric layer comprising SiOxNy.
  • the followings are respectively positioned outwardly from the glass:
  • barrier layer comprising NiCrOx
  • third dielectric layer comprising ZnAIOx
  • fourth dielectric layer comprising SixNy,
  • second seed layer comprising ZnAIOx
  • upper dielectric layer comprising SiOxNy.
  • the followings are respectively positioned outwardly from the glass:
  • barrier layer comprising NiCrOx
  • third dielectric layer comprising ZnAIOx
  • fourth dielectric layer comprising SixNy,
  • second seed layer comprising ZnAIOx
  • upper dielectric layer comprising SiOxNy.
  • the angular color change of said glass in the range of 8° and 75° is at most 2 units.
  • Figure 1 is a representative schematic view of the low-e coating.
  • low-e coated (20) glasses (10) related to architecture and automotive is realized by means of“sputtering” method.
  • the present invention essentially relates to low-e coated (20) glasses (10) with double silver whose visible region daylight transmittance (hereafter it will be called T ViS %) is at the medium level and whose thermal process resistance is high and used as thermal isolation glass (10) which transmits daylight and relates to the ingredient and application of said low-e coating (20).
  • a low-e coating (20) comprising pluralities of metal, metal oxide and metal nitride/oxy-nitride layers positioned on the glass (10) surface by using sputtering method in order to obtain a low-e coated (20) glass (10) designed in a heat treatable manner such that the angular color change is obtained in an acceptable level and having medium T ViS % value in order to be applied onto the surface of a glass (10). Said layers are collected on each other respectively under vacuum.
  • the thermal process at least one of and/or a number of tempering, partial tempering, annealing, bending and lamination processes can be used.
  • the subject matter low-e coated (20) glass (10) can be used as architecture and automotive glass (10).
  • the solar energy spectrum is a first infrared reflective layer (22) and a second infrared reflective layer (25) providing thermal radiation reflection in the infrared spectrum and providing transmittance at the targeted T ViS % level.
  • Ag layer is used as the first infrared reflective layer (22) and as the second infrared reflective layer (25), and the thermal emissivity thereof is low.
  • the refraction indices of all layers are determined by using calculated methods through optic constants obtained from single-layer measurements taken. Said refraction indices are the refraction index data at 550 nm.
  • a bottom dielectric structure (21) in a manner contacting glass (10).
  • a first dielectric layer (211) is used as the bottom layer.
  • Said first dielectric layer (211) comprises at least one of Si x N y , SiOxN y, ZnSnO x , TiO x , TiN x , ZrN x layers. In the preferred application, the first dielectric layer (211) comprises Si x N y .
  • the first dielectric layer (211) comprising Si x N y behaves as diffusion barrier and serves to prevent alkali ion migration which becomes easy at high temperature.
  • the first dielectric layer (211) comprising Si x N y supports resistance of the coating (20) against thermal processes. Since silisium oxide is the main component of standard soda- lime-silicate glass, the first dielectric layer (211) comprising Si x N y adsorbs very well to the glass and to the other layer in the vicinity of the glass.
  • the variation range of the first dielectric layer (211) comprising Si x N y is between 2.00 and 2.10. In the preferred structure, the variation range for the refraction index of the first dielectric layer (211) comprising Si x N y is between 2.02 and 2.08.
  • the thickness of the first dielectric layer (211) comprising Si x N y is between 5 nm and 20 nm. In the preferred application, the thickness of the first dielectric layer (211) comprising Si x N y is between 8 nm and 18 nm. In a further preferred application, the thickness of the first dielectric layer (211) comprising Si x N y is between 10 nm and 15 nm.
  • a second dielectric layer (212) is positioned between the first seed layer (213) and the first dielectric layer (211) comprising Si x N y .
  • Said second dielectric layer (212) comprises at least one of TiO x , ZrO x , NbO x layers.
  • TiO x is used as the second dielectric layer (212). Since TiO x is a material with high refraction index, the same optic performance is obtained with less thickness and plays a role which increases the transmittance performance of the low-e coating (20).
  • the refraction index of the second dielectric layer (212), comprising TiO x which is after the first dielectric layer (211) comprising Si x N y is between 2.40 and 2.60.
  • the thickness of the second dielectric layer (212) comprising TiO x is between 0 nm and 10 nm. In the preferred application, the thickness of the second dielectric layer (212) comprising TiO x is between 1 nm and 8 nm. In a further preferred application, the thickness of the second dielectric layer (212) comprising TiO x is between 2 nm and 6 nm.
  • the transmittance color b* value in the CIELAB space among the color values of low-e coated (20) glass (10) or in other words,“Tb” value passes to the positive region, in other words, it passes to yellow color and the uncoated side reflection (hereafter it will be called Rg Vis %) in the visible region increases and Tvis% decreases and this leads to moving away from the targeted performance.
  • At least one first seed structure (213) is positioned between the first dielectric layer (211) comprising Si x N y and the first infrared reflective layer (22) comprising Ag.
  • the first seed structure (213) comprises at least one of NiCr, NiCrO x , TiO x , ZnAIO x, ZnO x .
  • the first seed structure (213) comprises at least one first seed layer (2131).
  • the first seed layer (2131) comprises ZnAIO x .
  • the thickness of the first seed layer (2131) comprising ZnAIO x is between 13 nm and 23 nm. In the preferred application, the thickness of the first seed layer (2131) comprising ZnAIO x is between 15 nm and 23 nm. In a further preferred application, the thickness of the first seed layer (2131) comprising ZnAIO x is between 17 nm and 21 nm.
  • middle dielectric structure (24) positioned between the first infrared reflective layer (22) and the second infrared reflective layer (25) and which separates the first infrared reflective layer (22) and the second infrared reflective layer (25) from each other and which provides the low-e coating (20) layer sequencing to reach the targeted performance.
  • Said middle dielectric structure (24) comprises at least one dielectric layer.
  • the middle dielectric structure (24) comprises at least one second seed layer (243) positioned in the vicinity of the dielectric layer together with at least one dielectric layer.
  • the second seed layer (243) comprises at least one of NiCr, NiCrO x , TiO x , ZnAIO x , ZnO x .
  • the second seed layer (243) preferably comprises ZnAIO x .
  • the middle dielectric layer structure (24) comprises at least two dielectric layers selected from Si x N y , TiN x , ZrN x , ZnSnO x , ZnAIO x , SiO x N y , TiO x , ZnO x .
  • the selected two dielectric layers contact each other.
  • the middle dielectric structure (24) comprises a third dielectric layer (241), a fourth dielectric layer (242) and the second seed layer (243).
  • the middle dielectric structure (24) is positioned in a manner directly contacting the second infrared reflective layer (25) comprising Ag.
  • the third dielectric layer (241) comprises ZnAIO x
  • the fourth dielectric layer (242) comprises Si x N y .
  • the thicknesses and structures of the dielectric layers of said middle dielectric structure (24) are separately optimized and the reflection and color values of the glass side and of the air side form greater number of options in the subject of obtaining the targeted values.
  • the sandwich form of the middle dielectric structure (24) provides optimization of the targeted reflection and color values and moreover, this sandwich form is required for improving opto electronic characteristics of the second infrared reflective layer (25) including Ag.
  • the middle dielectric structure (24) is formed by a single and thick layer, the middle dielectric layer, targeted to be amorphous, partially and/or completely becomes more probable to show a crystalline structure.
  • the second seed layer (243) which is in direct contact with the second infrared reflective layer (25) including Ag, grows on the layer which contacts the other surface thereof, the layer whereon said second seed layer (243) grows is preferred to have amorphous structure in order not to be affected by the crystallization of said layer.
  • the fourth dielectric layer (242) comprising amorphous Si x N y contacts the other surface of the second seed layer (243) comprising ZnAIO x .
  • the middle dielectric structure (24) has a thickness between 80 nm and 1 10 nm. In the preferred application, the middle dielectric structure (24) has a thickness between 85 nm and 100 nm. More preferably, the middle dielectric structure (24) has a thickness between 88 nm and 95 nm.
  • An upper dielectric structure (26) is positioned on the second infrared reflective layer (25).
  • Said upper dielectric structure (26) comprises a second barrier layer (261) positioned in the vicinity of the second infrared reflective layer (25) including Ag, and a fifth dielectric layer (262) and an upper dielectric layer (263).
  • the fifth dielectric layer (262) comprises at least one of ZnSnO x , ZnAIO x , SiO x N y , SiO x , Si x N y , TiO x , ZnO x .
  • the fifth dielectric layer (262) comprises ZnAIO x .
  • the thickness of the fifth dielectric layer (262) including ZnAIO x is between 5 nm and 17 nm. In the preferred application, the thickness of the fifth dielectric layer (262) including ZnAIO x is between 7 nm and 15 nm. In a further preferred application, the thickness of the fifth dielectric layer (262) including ZnAIO x is between 8 nm and 14 nm.
  • the thickness of the third dielectric layer (241), including ZnAIO x , provided in the middle dielectric structure (24) is between 14 nm and 24 nm. In the preferred application, the thickness of the third dielectric layer (241) including ZnAIO x is between 16 nm and 22 nm. In a further preferred application, the thickness of the third dielectric layer (241) including ZnAIO x is between 18 nm and 22 n .
  • the refraction index for the first seed layer (2131), including ZnAIO x , the second dielectric layer (241), the second seed layer (243) and the fifth dielectric layer (262) is between 1.90 and 2.10. In the preferred embodiment, refraction index for the first seed layer (2131), including ZnAIO x , the second dielectric layer (241), the second seed layer (243) and the fifth dielectric layer (262) is between 1.95 and 2.10.
  • Said fourth dielectric layer (242) comprises at least one of Si x N y , TiN x , ZrN x layers.
  • the fourth dielectric layer (242) comprises Si x N y .
  • the thickness of the fourth dielectric layer (242) including Si x N y is between 45 nm and 58 nm.
  • the thickness of the fourth dielectric layer (242) including Si x N y is between 48 nm and 56 nm.
  • the thickness of the fourth dielectric layer (242) including Si x N y is between 50 nm and 54 nm.
  • the thickness of the second seed layer (243) including ZnAIO x is between 14 nm and 24 nm. In the preferred application, the thickness of the second seed layer (243) including ZnAIO x is between 16 nm and 22 nm. In a further preferred application, the thickness of the second seed layer (243) including ZnAIO x is between 18 nm and 21 nm.
  • the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) including Ag are between 6 nm and 18 nm. In the preferred application, the thicknesses of the first infrared reflective layer (213) and the second infrared reflective layer (25) including Ag are between 8 nm and 16 nm. More specifically, in order to obtain both the targeted performance value and in order to obtain the desired color characteristics and low inner and outer reflection values in the visible region, the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) including Ag are between 10 nm and 14 nm.
  • the product In order to obtain the targeted selectivity and optic performance, the product shall have two separate infrared reflective layers including silver.
  • the visible region transmittance value prior to thermal process is preferred to be between 35% and 52% for the usage of 6 mm lower glass (10). More preferably, it shall be between 37% and 50%, in a further preferred structure, it shall be between 40% and 47%.
  • the direct solar energy transmittance value is preferred to be between 14% and 30% prior to the thermal process. More preferably, it shall be between 16% and 28%, in a further preferred structure, it shall be between 19% and 25%.
  • this performance shall be supported to be obtained by means of the optimization of all other dielectric layers.
  • the upper dielectric layer (263) comprising SiO x N y is preferred and in case said upper dielectric layer (263) is used so as to be in direct contact with a second barrier layer (261) including NiCr, a second barrier layer (261) including NiCr and the upper dielectric layer (263) including SiO x N y show incompliant behavior with each other and de-lamination occurs after thermal process. Therefore, a fifth dielectric layer (262) is added between the upper dielectric layer (263) including SiO x N y and a second barrier layer (261) including NiCr existing in the subject matter low-e coating (20) and the performance of adhesion between the layers has been increased.
  • the fifth dielectric layer (262) comprises ZnAIO x .
  • the same optic behavior can be obtained by means of a layer including a thicker SiO x N y .
  • the thickness of the upper dielectric layer (263) including SiO x N y is between 21 nm and 35 nm. In the preferred application, the thickness of the upper dielectric layer (263) including SiO x N y is between 23 nm and 33 nm. In a further preferred application, the thickness of the upper dielectric layer (263) including SiO x N y is between 25 nm and 31 nm.
  • the first seed structure (213) As the first seed structure (213), the first seed layer (2131) and an absorbing layer (2132) are used together including ZnAIO x .
  • the absorbing layer (2132) contacts Ag which is the first infrared layer (22).
  • the absorbing layer (2132) comprises NiCr. In the preferred embodiment, the absorbing layer (2132) comprises NiCrO x .
  • the thickness of the absorbing layer (2132) is between 2.0 nm and 5.5 nm. In the preferred application, the thickness of the absorbing layer (2132) is between 2.3 nm and 5.0 nm. More preferably, the thickness of the layer (2132) is between 2.5 nm and 4.5 nm.
  • metallic NiCr is used as the absorbing layer (2132)
  • the absorbing layer (2132) used for decreasing reflection towards outside, is preferred to be in oxide structure.
  • first barrier layer (23) there is a first barrier layer (23) and a second barrier layer (261).
  • Said first barrier layer (23), said second barrier layer (261) comprise at least one of the NiCr, NiCrO x , TiO x , ZnAIO x layers.
  • the first barrier layer (23) comprises NiCr.
  • the first barrier layer (23) comprises NiCrO x .
  • the thickness of the layer which is the first barrier layer (23) comprising NiCrO x is between 1.0 nm and 5.5 nm. In the preferred application, the thickness of the first barrier layer (23) comprising NiCrO x is between 1.5 nm and 5.0 nm. More preferably, the thickness of the first barrier layer (23) comprising NiCrO x is between 2.0 nm and 4.5 nm.
  • the second barrier layer (261) comprises NiCrO x .
  • the second barrier layer (261) comprises NiCr.
  • the thickness of the second barrier layer (261) is between 1.5 nm and 5.5 nm. In the preferred application, the thickness of the second barrier layer (261) is between 1.8 nm and 5.3 nm. More preferably, thickness of the second barrier layer (261) is between 2.0 nm and 5.0 nm.
  • the second barrier layer (261) comprising metallic NiCr
  • the metallic NiCr layer is moved away from the glass (10) and Rg V is% value of the low-e coated (20) glass (10) is decreased.
  • the second barrier layer (261) used for decreasing outward reflection is preferred to have metal structure. The values of inward and outward reflection of the low-e coated (20) glass (10) in the visible region prior to thermal process and for the double glass have been given below.
  • the first barrier layer (23), comprising NiCrO x is used for not affecting the first infrared reflective layer (22) including Ag among the process gases used for production of layers after the first infrared reflective layer (22) including Ag.
  • the first barrier layer (23), including NiCrO x is after the Ag layer and provides structural compliancy in metallic and dielectric passage between dielectric layers and eliminates probable adhesion weakness before the thermal process.
  • the angular color change can be kept low by means of coating all layers together and within the mentioned thickness ranges.
  • the first barrier layer (23) in case metallic NiCr structure is used, the angular color change increases even if the reflection is reduced.
  • a* value of the angular color change which is at 75° and lower, in the negative region and under 2 units, the usage of NiCrO x , which is in oxide structure, as the first barrier layer (23) which is after the first infrared reflective layer (22) and the usage of metallic NiCr as the second barrier layer (261) bear importance in order for the angular color change of the coating to be low.

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
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Abstract

The present invention is a heat treatable low-e coated (20) glass (10) developed for architecture and automotive fields.

Description

LOW-E COATED GLASS
TECHNICAL FIELD
The present invention relates to a low emissivity (low-e) coating having infrared reflective layers therein and used as thermal isolation glass and which transmits daylight and having high thermal process resistance.
PRIOR ART
One of the factors which differentiate optic characteristics of glasses is the coating applications which are applied onto the glass surface. One of the coating applications is the magnetic field supported sputtering method in vacuum medium. This is a method frequently used particularly in the production of architecture and automotive coatings having low-e characteristic. By means of said method, the transmittance and reflection values of the coated glasses in the visible, near infrared and infrared region of the solar energy spectrum can be obtained at the targeted levels.
Besides transmittance and reflection values, selectivity value is also an important parameter in coated glasses. In ISO 9050 (2003) standard, selectivity is defined as the ratio of the transmittance value of the visible region to the solar factor. The selectivity values of coatings can be kept at the targeted levels by means of the number of Ag layers included, the type of the seed layer used, dielectric layer combinations which decrease reflection, and the parametric optimizations of the layers.
In the patent with publication number US7901781 B2, low-emissivity stacks are being characterized by a low solar heat gain coefficient (SHGC), mechanical and chemical durability, and a tolerance for tempering or heat strengthening. Said low-e coatings comprise two silver layers which are independent from each other, and on these silver layers, NiCr is positioned both in oxide and metal forms from the glass towards atmosphere.
BRIEF DESCRIPTION OF THE INVENTION
The present invention relates to a low-e coated glass, for bringing new advantages to the related technical field. The main object of the present invention is to provide a low-e coated glass whose angular color change is reduced.
Another object of the present invention is to provide a low-e coated glass whose visible region reflection is reduced.
In order to realize all of the abovementioned objects and the objects which are to be deducted from the detailed description below, the present invention is a heat treatable low-e coated glass developed for use in architecture and automotive fields. Accordingly the followings are respectively positioned outwardly from the glass:
a first dielectric layer comprising at least one of SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx,
a first seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx,
an absorbing layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
a first infrared reflective layer,
a barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
a third dielectric layer selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx,
a fourth dielectric layer comprising at least one of SixNy, TiNx, ZrNx,
a second seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx, a second infrared reflective layer,
a second barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
a fifth dielectric layer selected from ZnSnOx, ZnAIOx, SiOxNy, SiOx, SixNy, TiOx,
ZnOx,
an upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass:
- first dielectric layer comprising at least one of SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx,
a second dielectric layer selected from TiOx, ZrOx, NbOx,
first seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx,
absorbing layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
barrier infrared reflective layer,
barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
- third dielectric layer selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx, - fourth dielectric layer comprising at least one of SixNy, TiNx, ZrNx, second seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx,
second infrared reflective layer,
second barrier layer selected from NiCr, NiCrOx, TiOx, ZnAIOx,
fifth dielectric layer selected from ZnSnOx, ZnAIOx, SiOxNy, SiOx, SixNy, TiOx,
ZnOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass:
- first dielectric layer comprising SixNy,
second dielectric layer comprising TiOx,
- first seed layer comprising ZnAIOx,
absorbing layer selected from NiCr, NiCrOx,
- first infrared reflective layer,
barrier layer selected from NiCr, NiCrOx,
- third dielectric layer comprising ZnAIOx,
fourth dielectric layer comprising SixNy,
second seed layer comprising ZnAIOx,
second infrared reflective layer,
second barrier layer selected from NiCr, NiCrOx,
fifth dielectric layer comprising ZnAIOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass:
- first dielectric layer comprising SixNy,
second dielectric layer comprising TiOx,
- first seed layer comprising ZnAIOx,
absorbing layer comprising NiCr,
- first infrared reflective layer,
barrier layer selected from NiCr, NiCrOx,
- third dielectric layer comprising ZnAIOx,
fourth dielectric layer comprising SixNy,
second seed layer comprising ZnAIOx,
second infrared reflective layer,
second barrier layer selected from NiCr, NiCrOx, - fifth dielectric layer comprising ZnAIOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass:
- first dielectric layer comprising SixNy,
second dielectric layer comprising TiOx,
- first seed layer comprising ZnAIOx,
absorbing layer comprising NiCrOx,
- first infrared reflective layer,
barrier layer selected from NiCr, NiCrOx,
- third dielectric layer comprising ZnAIOx,
fourth dielectric layer comprising SixNy,
second seed layer comprising ZnAIOx,
second infrared reflective layer,
second barrier layer selected from NiCr, NiCrOx,
fifth dielectric layer comprising ZnAIOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass:
- fifth dielectric layer comprising SixNy,
second dielectric layer comprising TiOx,
- first seed layer comprising ZnAIOx,
absorbing layer comprising NiCrOx,
- first infrared reflective layer,
barrier layer comprising NiCr,
- third dielectric layer comprising ZnAIOx,
fourth dielectric layer comprising SixNy,
second seed layer comprising ZnAIOx,
second infrared reflective layer,
second barrier layer selected from NiCr, NiCrOx,
fifth dielectric layer comprising ZnAIOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass: - first dielectric layer comprising SixNy,
second dielectric layer comprising TiOx,
- first seed layer comprising ZnAIOx,
absorbing layer comprising NiCrOx,
- first infrared reflective layer,
barrier layer comprising NiCrOx,
third dielectric layer comprising ZnAIOx,
fourth dielectric layer comprising SixNy,
second seed layer comprising ZnAIOx,
second infrared reflective layer,
second barrier layer selected from NiCr, NiCrOx,
fifth dielectric layer comprising ZnAIOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass:
- first dielectric layer comprising SixNy,
second dielectric layer comprising TiOx,
- first seed layer comprising ZnAIOx,
absorbing layer comprising NiCrOx,
- first infrared reflective layer,
barrier layer comprising NiCrOx,
third dielectric layer comprising ZnAIOx,
fourth dielectric layer comprising SixNy,
second seed layer comprising ZnAIOx,
second infrared reflective layer,
second barrier layer comprising NiCr,
- fifth dielectric layer comprising ZnAIOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the followings are respectively positioned outwardly from the glass:
- first dielectric layer comprising SixNy,
second dielectric layer comprising TiOx,
- first seed layer comprising ZnAIOx,
absorbing layer comprising NiCrOx,
- first infrared reflective layer, barrier layer comprising NiCrOx,
third dielectric layer comprising ZnAIOx,
fourth dielectric layer comprising SixNy,
second seed layer comprising ZnAIOx,
second infrared reflective layer,
second barrier layer comprising NiCrOx,
- fifth dielectric layer comprising ZnAIOx,
upper dielectric layer comprising SiOxNy.
In another preferred embodiment of the present invention, the angular color change of said glass in the range of 8° and 75° is at most 2 units.
BRIEF DESCRIPTION OF THE FIGURE
Figure 1 is a representative schematic view of the low-e coating.
REFERENCE NUMBERS
10 Glass
20 Low-e coating
21 Bottom dielectric structure
211 First dielectric layer
212 Second dielectric layer
213 First seed structure
2131 First seed layer
2132 Absorbing layer
22 First infrared reflective layer
23 First barrier layer
24 Middle dielectric structure
241 Third dielectric layer
242 Fourth dielectric layer
243 Second seed layer
25 Second infrared reflective layer
26 Upper dielectric structure
261 Second barrier layer
262 Fifth dielectric layer
263 Upper dielectric layer DETAILED DESCRIPTION OF THE INVENTION
In this detailed description, the subject matter low-e coated (20) glass (10) is explained with references to examples without forming any restrictive effect only in order to make the subject more understandable.
The production of low-e coated (20) glasses (10) related to architecture and automotive is realized by means of“sputtering” method. The present invention essentially relates to low-e coated (20) glasses (10) with double silver whose visible region daylight transmittance (hereafter it will be called TViS%) is at the medium level and whose thermal process resistance is high and used as thermal isolation glass (10) which transmits daylight and relates to the ingredient and application of said low-e coating (20).
In the present invention, a low-e coating (20) is developed comprising pluralities of metal, metal oxide and metal nitride/oxy-nitride layers positioned on the glass (10) surface by using sputtering method in order to obtain a low-e coated (20) glass (10) designed in a heat treatable manner such that the angular color change is obtained in an acceptable level and having medium TViS% value in order to be applied onto the surface of a glass (10). Said layers are collected on each other respectively under vacuum. As the thermal process, at least one of and/or a number of tempering, partial tempering, annealing, bending and lamination processes can be used. The subject matter low-e coated (20) glass (10) can be used as architecture and automotive glass (10).
In terms of the production easiness and in terms of optic characteristics, in order to develop an ideal low-e coating (20) sequencing which is heat treatable, the following data has been detected as a result of experimental studies.
In the subject matter low-e coating (20); the solar energy spectrum is a first infrared reflective layer (22) and a second infrared reflective layer (25) providing thermal radiation reflection in the infrared spectrum and providing transmittance at the targeted TViS% level. Ag layer is used as the first infrared reflective layer (22) and as the second infrared reflective layer (25), and the thermal emissivity thereof is low.
In the subject matter low-e coated (20) glass (10), the refraction indices of all layers are determined by using calculated methods through optic constants obtained from single-layer measurements taken. Said refraction indices are the refraction index data at 550 nm. In the subject matter coating, there is a bottom dielectric structure (21) in a manner contacting glass (10). In said bottom dielectric structure (21), a first dielectric layer (211) is used as the bottom layer. Said first dielectric layer (211) comprises at least one of SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx layers. In the preferred application, the first dielectric layer (211) comprises SixNy. The first dielectric layer (211) comprising SixNy behaves as diffusion barrier and serves to prevent alkali ion migration which becomes easy at high temperature. Thus, the first dielectric layer (211) comprising SixNy supports resistance of the coating (20) against thermal processes. Since silisium oxide is the main component of standard soda- lime-silicate glass, the first dielectric layer (211) comprising SixNy adsorbs very well to the glass and to the other layer in the vicinity of the glass. The variation range of the first dielectric layer (211) comprising SixNy is between 2.00 and 2.10. In the preferred structure, the variation range for the refraction index of the first dielectric layer (211) comprising SixNy is between 2.02 and 2.08.
The thickness of the first dielectric layer (211) comprising SixNy is between 5 nm and 20 nm. In the preferred application, the thickness of the first dielectric layer (211) comprising SixNy is between 8 nm and 18 nm. In a further preferred application, the thickness of the first dielectric layer (211) comprising SixNy is between 10 nm and 15 nm.
A second dielectric layer (212) is positioned between the first seed layer (213) and the first dielectric layer (211) comprising SixNy. Said second dielectric layer (212) comprises at least one of TiOx, ZrOx, NbOx layers. In the preferred application, TiOx is used as the second dielectric layer (212). Since TiOx is a material with high refraction index, the same optic performance is obtained with less thickness and plays a role which increases the transmittance performance of the low-e coating (20). The refraction index of the second dielectric layer (212), comprising TiOx, which is after the first dielectric layer (211) comprising SixNy is between 2.40 and 2.60. In the preferred application, it is between 2.42 and 2.50. The thickness of the second dielectric layer (212) comprising TiOxis between 0 nm and 10 nm. In the preferred application, the thickness of the second dielectric layer (212) comprising TiOxis between 1 nm and 8 nm. In a further preferred application, the thickness of the second dielectric layer (212) comprising TiOxis between 2 nm and 6 nm.
When SixNy and TiOx, which are the first and second layers after glass, are used together, thanks to the high refraction index of TiOx, optic performance can be optimized by using thinner SixNy layer. Important changes are observed in color and optic performance even if the transmittance performance value of the low-e coated (20) glass (10) does not change under the mentioned thickness value. Over the mentioned thickness value, the transmittance color b* value in the CIELAB space among the color values of low-e coated (20) glass (10) or in other words,“Tb” value passes to the positive region, in other words, it passes to yellow color and the uncoated side reflection (hereafter it will be called RgVis%) in the visible region increases and Tvis% decreases and this leads to moving away from the targeted performance.
At least one first seed structure (213) is positioned between the first dielectric layer (211) comprising SixNy and the first infrared reflective layer (22) comprising Ag. The first seed structure (213) comprises at least one of NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx. The first seed structure (213) comprises at least one first seed layer (2131). As said first seed layer (2131), at least one of NiCr, NiCrOx, TiOx, ZnAIOx, ZnOxis used. In the preferred application, the first seed layer (2131) comprises ZnAIOx. The thickness of the first seed layer (2131) comprising ZnAIOx is between 13 nm and 23 nm. In the preferred application, the thickness of the first seed layer (2131) comprising ZnAIOx is between 15 nm and 23 nm. In a further preferred application, the thickness of the first seed layer (2131) comprising ZnAIOxis between 17 nm and 21 nm.
There is a middle dielectric structure (24) positioned between the first infrared reflective layer (22) and the second infrared reflective layer (25) and which separates the first infrared reflective layer (22) and the second infrared reflective layer (25) from each other and which provides the low-e coating (20) layer sequencing to reach the targeted performance. Said middle dielectric structure (24) comprises at least one dielectric layer. In an application of the present invention, the middle dielectric structure (24) comprises at least one second seed layer (243) positioned in the vicinity of the dielectric layer together with at least one dielectric layer. The second seed layer (243) comprises at least one of NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx. The second seed layer (243) preferably comprises ZnAIOx. In the preferred application of the present invention, the middle dielectric layer structure (24) comprises at least two dielectric layers selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx. The selected two dielectric layers contact each other. The middle dielectric structure (24) comprises a third dielectric layer (241), a fourth dielectric layer (242) and the second seed layer (243). The middle dielectric structure (24) is positioned in a manner directly contacting the second infrared reflective layer (25) comprising Ag. In the preferred embodiment of the present invention, the third dielectric layer (241) comprises ZnAIOx and the fourth dielectric layer (242) comprises SixNy.
The thicknesses and structures of the dielectric layers of said middle dielectric structure (24) are separately optimized and the reflection and color values of the glass side and of the air side form greater number of options in the subject of obtaining the targeted values. The sandwich form of the middle dielectric structure (24) provides optimization of the targeted reflection and color values and moreover, this sandwich form is required for improving opto electronic characteristics of the second infrared reflective layer (25) including Ag.
In other words;
In case the middle dielectric structure (24) is formed by a single and thick layer, the middle dielectric layer, targeted to be amorphous, partially and/or completely becomes more probable to show a crystalline structure. While the second seed layer (243), which is in direct contact with the second infrared reflective layer (25) including Ag, grows on the layer which contacts the other surface thereof, the layer whereon said second seed layer (243) grows is preferred to have amorphous structure in order not to be affected by the crystallization of said layer. The fourth dielectric layer (242) comprising amorphous SixNy contacts the other surface of the second seed layer (243) comprising ZnAIOx. Thus, a problem like crystalline incompliancy is prevented and thus the crystallization of the structure of the second seed layer (243) is prevented from being deteriorated, and formation of undesired residue tension is prevented. Additionally, a different crystallographic orientation is prevented. The sensitivity which is specific for the second seed layer (243) provides growing of the second infrared layer (25) at the required crystallographic orientation. The middle dielectric structure (24) has a thickness between 80 nm and 1 10 nm. In the preferred application, the middle dielectric structure (24) has a thickness between 85 nm and 100 nm. More preferably, the middle dielectric structure (24) has a thickness between 88 nm and 95 nm.
An upper dielectric structure (26) is positioned on the second infrared reflective layer (25). Said upper dielectric structure (26) comprises a second barrier layer (261) positioned in the vicinity of the second infrared reflective layer (25) including Ag, and a fifth dielectric layer (262) and an upper dielectric layer (263). The fifth dielectric layer (262) comprises at least one of ZnSnOx, ZnAIOx, SiOxNy, SiOx, SixNy, TiOx, ZnOx. In the preferred application, the fifth dielectric layer (262) comprises ZnAIOx. The thickness of the fifth dielectric layer (262) including ZnAIOx is between 5 nm and 17 nm. In the preferred application, the thickness of the fifth dielectric layer (262) including ZnAIOx is between 7 nm and 15 nm. In a further preferred application, the thickness of the fifth dielectric layer (262) including ZnAIOx is between 8 nm and 14 nm.
The thickness of the third dielectric layer (241), including ZnAIOx, provided in the middle dielectric structure (24) is between 14 nm and 24 nm. In the preferred application, the thickness of the third dielectric layer (241) including ZnAIOx is between 16 nm and 22 nm. In a further preferred application, the thickness of the third dielectric layer (241) including ZnAIOx is between 18 nm and 22 n . The refraction index for the first seed layer (2131), including ZnAIOx, the second dielectric layer (241), the second seed layer (243) and the fifth dielectric layer (262) is between 1.90 and 2.10. In the preferred embodiment, refraction index for the first seed layer (2131), including ZnAIOx, the second dielectric layer (241), the second seed layer (243) and the fifth dielectric layer (262) is between 1.95 and 2.10.
Said fourth dielectric layer (242) comprises at least one of SixNy, TiNx, ZrNx layers. In the preferred application, the fourth dielectric layer (242) comprises SixNy. The thickness of the fourth dielectric layer (242) including SixNy is between 45 nm and 58 nm. In the preferred application, the thickness of the fourth dielectric layer (242) including SixNy is between 48 nm and 56 nm. In a further preferred application, the thickness of the fourth dielectric layer (242) including SixNy is between 50 nm and 54 nm.
The thickness of the second seed layer (243) including ZnAIOx is between 14 nm and 24 nm. In the preferred application, the thickness of the second seed layer (243) including ZnAIOx is between 16 nm and 22 nm. In a further preferred application, the thickness of the second seed layer (243) including ZnAIOx is between 18 nm and 21 nm.
In order to obtain transmittance and reflection values targeted for the subject matter low-e coated (20) products related to architectural use, the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) including Ag are between 6 nm and 18 nm. In the preferred application, the thicknesses of the first infrared reflective layer (213) and the second infrared reflective layer (25) including Ag are between 8 nm and 16 nm. More specifically, in order to obtain both the targeted performance value and in order to obtain the desired color characteristics and low inner and outer reflection values in the visible region, the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) including Ag are between 10 nm and 14 nm. In order to obtain the targeted selectivity and optic performance, the product shall have two separate infrared reflective layers including silver. In order to obtain the targeted performance value, the visible region transmittance value prior to thermal process is preferred to be between 35% and 52% for the usage of 6 mm lower glass (10). More preferably, it shall be between 37% and 50%, in a further preferred structure, it shall be between 40% and 47%. For the usage of 6 mm lower glass (10), the direct solar energy transmittance value is preferred to be between 14% and 30% prior to the thermal process. More preferably, it shall be between 16% and 28%, in a further preferred structure, it shall be between 19% and 25%. Moreover, this performance shall be supported to be obtained by means of the optimization of all other dielectric layers.
In case the upper dielectric layer (263) comprising SiOxNy is preferred and in case said upper dielectric layer (263) is used so as to be in direct contact with a second barrier layer (261) including NiCr, a second barrier layer (261) including NiCr and the upper dielectric layer (263) including SiOxNy show incompliant behavior with each other and de-lamination occurs after thermal process. Therefore, a fifth dielectric layer (262) is added between the upper dielectric layer (263) including SiOxNy and a second barrier layer (261) including NiCr existing in the subject matter low-e coating (20) and the performance of adhesion between the layers has been increased. The fifth dielectric layer (262) comprises ZnAIOx.
In case a layer including SiOxNy is used instead of the layer including SixNy as the upper dielectric layer (263), since the refraction index of the layer including SiOxNy is lower than the refraction index of the layer including SixNy, the same optic behavior can be obtained by means of a layer including a thicker SiOxNy. Thus, by using a thicker upper dielectric layer (263), the mechanical resistance of the coating is increased. The thickness of the upper dielectric layer (263) including SiOxNy is between 21 nm and 35 nm. In the preferred application, the thickness of the upper dielectric layer (263) including SiOxNy is between 23 nm and 33 nm. In a further preferred application, the thickness of the upper dielectric layer (263) including SiOxNy is between 25 nm and 31 nm.
As the first seed structure (213), the first seed layer (2131) and an absorbing layer (2132) are used together including ZnAIOx. The absorbing layer (2132) contacts Ag which is the first infrared layer (22).
In an application of the present invention, the absorbing layer (2132) comprises NiCr. In the preferred embodiment, the absorbing layer (2132) comprises NiCrOx. The thickness of the absorbing layer (2132) is between 2.0 nm and 5.5 nm. In the preferred application, the thickness of the absorbing layer (2132) is between 2.3 nm and 5.0 nm. More preferably, the thickness of the layer (2132) is between 2.5 nm and 4.5 nm. In case metallic NiCr is used as the absorbing layer (2132), the outer reflection value from the low-e coated (20) glass (10) increases. The absorbing layer (2132), used for decreasing reflection towards outside, is preferred to be in oxide structure.
In the subject matter low-e coating (20), there is a first barrier layer (23) and a second barrier layer (261). Said first barrier layer (23), said second barrier layer (261) comprise at least one of the NiCr, NiCrOx, TiOx, ZnAIOx layers. In an application of the present invention, the first barrier layer (23) comprises NiCr. In the preferred application, the first barrier layer (23) comprises NiCrOx. The thickness of the layer which is the first barrier layer (23) comprising NiCrOx, is between 1.0 nm and 5.5 nm. In the preferred application, the thickness of the first barrier layer (23) comprising NiCrOx is between 1.5 nm and 5.0 nm. More preferably, the thickness of the first barrier layer (23) comprising NiCrOx is between 2.0 nm and 4.5 nm.
In an application of the present invention, the second barrier layer (261) comprises NiCrOx. Preferably the second barrier layer (261) comprises NiCr. The thickness of the second barrier layer (261) is between 1.5 nm and 5.5 nm. In the preferred application, the thickness of the second barrier layer (261) is between 1.8 nm and 5.3 nm. More preferably, thickness of the second barrier layer (261) is between 2.0 nm and 5.0 nm.
As the second barrier layer (261), comprising metallic NiCr, is positioned after the second infrared reflective layer (25), the metallic NiCr layer is moved away from the glass (10) and RgVis% value of the low-e coated (20) glass (10) is decreased. The second barrier layer (261) used for decreasing outward reflection is preferred to have metal structure. The values of inward and outward reflection of the low-e coated (20) glass (10) in the visible region prior to thermal process and for the double glass have been given below.
Table 1 : Visible region reflection values
Figure imgf000015_0001
The first barrier layer (23), comprising NiCrOx, is used for not affecting the first infrared reflective layer (22) including Ag among the process gases used for production of layers after the first infrared reflective layer (22) including Ag. At the same time, the first barrier layer (23), including NiCrOx, is after the Ag layer and provides structural compliancy in metallic and dielectric passage between dielectric layers and eliminates probable adhesion weakness before the thermal process.
The angular color change of a* value (Rg-a*) of the glass-side reflection after thermal process for the optimized low-e coated (20) glass (10) in the abovementioned arrangement is given in Table 2.
Table 2: Angular color change of the low-e coated (20) glass (10)
Figure imgf000016_0001
The angular color change can be kept low by means of coating all layers together and within the mentioned thickness ranges. For the first barrier layer (23), in case metallic NiCr structure is used, the angular color change increases even if the reflection is reduced. Thus, in order to keep the outward reflection a* value of the angular color change, which is at 75° and lower, in the negative region and under 2 units, the usage of NiCrOx, which is in oxide structure, as the first barrier layer (23) which is after the first infrared reflective layer (22) and the usage of metallic NiCr as the second barrier layer (261) bear importance in order for the angular color change of the coating to be low.
The protection scope of the present invention is set forth in the annexed claims and cannot be restricted to the illustrative disclosures given above, under the detailed description. It is because a person skilled in the relevant art can obviously produce similar embodiments under the light of the foregoing disclosures, without departing from the main principles of the present invention.

Claims

1. A heat treatable low-e coated (20) glass (10) developed for use in architecture and automotive fields, wherein the followings are respectively positioned outwardly from the glass (10):
a first dielectric layer (211) comprising at least one of SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx,
a first seed layer (2131) selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx, an absorbing layer (2132) selected from NiCr, NiCrOx, TiOx, ZnAIOx,
a first infrared reflective layer (22),
a barrier layer (23) selected from NiCr, NiCrOx, TiOx, ZnAIOx,
a third dielectric layer (241) selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx,
a fourth dielectric layer (242) comprising at least one of SixNy, TiNx, ZrNx, a second seed layer (243) selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx, a second infrared reflective layer (25),
a second barrier layer (261) selected from NiCr, NiCrOx, TiOx, ZnAIOx, a fifth dielectric layer (262) selected from ZnSnOx, ZnAIOx, SiOxNy, SiOx, SixNy, TiOx, ZnOx,
an upper dielectric layer (263) comprising SiOxNy.
2. A low-e coated (20) glass (10) according to claim 1 , wherein the followings are respectively positioned outwardly from the glass (10):
- first dielectric layer (211) comprising at least one of SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx,
a second dielectric layer (212) selected from TiOx, ZrOx, NbOx,
- first seed layer (2131) selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx,
absorbing layer (2132) selected from NiCr, NiCrOx, TiOx, ZnAIOx,
- first infrared reflective layer (22),
barrier layer (23) selected from NiCr, NiCrOx, TiOx, ZnAIOx,
- third dielectric layer (241) selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx,
fourth dielectric layer (242) comprising at least one of SixNy, TiNx, ZrNx, second seed layer (243) selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnOx, second infrared reflective layer (25),
second barrier layer (261) selected from NiCr, NiCrOx, TiOx, ZnAIOx, - fifth dielectric layer (262) selected from ZnSnOx, ZnAIOx, SiOxNy, SiOx, SixNy, TiOx, ZnOx,
upper dielectric layer (263) comprising SiOxNy.
3. A low-e coated (20) glass (10) according to claim 2, wherein the followings are respectively positioned outwardly from the glass (10):
- first dielectric layer (211) comprising SixNy,
second dielectric layer (212) comprising TiOx,
first seed layer (2131) comprising ZnAIOx,
absorbing layer (2132) selected from NiCr, NiCrOx,
- first infrared reflective layer (22),
barrier layer (23) selected from NiCr, NiCrOx,
- third dielectric layer (241) comprising ZnAIOx,
- fourth dielectric layer (242) comprising SixNy,
second seed layer (243) comprising ZnAIOx,
second infrared reflective layer (25),
second barrier layer (261) selected from NiCr, NiCrOx,
- fifth dielectric layer (262) comprising ZnAIOx,
upper dielectric layer (263) comprising SiOxNy.
4. A low-e coated (20) glass (10) according to claim 2, wherein the followings are respectively positioned outwardly from the glass (10):
- first dielectric layer (211) comprising SixNy,
second dielectric layer (212) comprising TiOx,
first seed layer (2131) comprising ZnAIOx,
absorbing layer (2132) comprising NiCr,
- first infrared reflective layer (22),
barrier layer (23) selected from NiCr, NiCrOx,
- third dielectric layer (241) comprising ZnAIOx,
- fourth dielectric layer (242) comprising SixNy,
second seed layer (243) comprising ZnAIOx,
second infrared reflective layer (25),
second barrier layer (261) selected from NiCr, NiCrOx,
- fifth dielectric layer (262) comprising ZnAIOx,
upper dielectric layer (263) comprising SiOxNy.
5. A low-e coated (20) glass (10) according to claim 2, wherein the followings are respectively positioned outwardly from the glass (10):
- first dielectric layer (211) comprising SixNy,
second dielectric layer (212) comprising TiOx,
first seed layer (2131) comprising ZnAIOx,
absorbing layer (2132) comprising NiCrOx,
first infrared reflective layer (22),
barrier layer (23) selected from NiCr, NiCrOx,
- third dielectric layer (241) comprising ZnAIOx,
- fourth dielectric layer (242) comprising SixNy,
second seed layer (243) comprising ZnAIOx,
second infrared reflective layer (25),
second barrier layer (261) selected from NiCr, NiCrOx,
- fifth dielectric layer (262) comprising ZnAIOx,
upper dielectric layer (263) comprising SiOxNy.
6. A low-e coated (20) glass (10) according to claim 5, wherein the followings are respectively positioned outwardly from the glass (10):
- fifth dielectric layer (211) comprising SixNy,
second dielectric layer (212) comprising TiOx,
- first seed layer (2131) comprising ZnAIOx,
absorbing layer (2132) comprising NiCrOx,
first infrared reflective layer (22),
barrier layer (23) comprising NiCr,
- third dielectric layer (241) comprising ZnAIOx,
- fourth dielectric layer (242) comprising SixNy,
second seed layer (243) comprising ZnAIOx,
second infrared reflective layer (25),
second barrier layer (261) selected from NiCr, NiCrOx,
- fifth dielectric layer (262) comprising ZnAIOx,
upper dielectric layer (263) comprising SiOxNy.
7. A low-e coated (20) glass (10) according to claim 5, wherein the followings are respectively positioned outwardly from the glass (10):
- first dielectric layer (211) comprising SixNy,
second dielectric layer (212) comprising TiOx,
first seed layer (2131) comprising ZnAIOx, absorbing layer (2132) comprising NiCrOx,
first infrared reflective layer (22),
barrier layer (23) comprising NiCrOx,
third dielectric layer (241) comprising ZnAIOx,
- fourth dielectric layer (242) comprising SixNy,
second seed layer (243) comprising ZnAIOx,
second infrared reflective layer (25),
second barrier layer (261) selected from NiCr, NiCrOx,
- fifth dielectric layer (262) comprising ZnAIOx,
upper dielectric layer (263) comprising SiOxNy.
8. A low-e coated (20) glass (10) according to claim 7, wherein the followings are respectively positioned outwardly from the glass (10):
- first dielectric layer (211) comprising SixNy,
second dielectric layer (212) comprising TiOx,
- first seed layer (2131) comprising ZnAIOx,
absorbing layer (2132) comprising NiCrOx,
first infrared reflective layer (22),
barrier layer (23) comprising NiCrOx,
third dielectric layer (241) comprising ZnAIOx,
- fourth dielectric layer (242) comprising SixNy,
second seed layer (243) comprising ZnAIOx,
second infrared reflective layer (25),
second barrier layer (261) comprising NiCr,
- fifth dielectric layer (262) comprising ZnAIOx,
upper dielectric layer (263) comprising SiOxNy.
9. A low-e coated (20) glass (10) according to claim 7, wherein the followings are respectively positioned outwardly from the glass (10):
- first dielectric layer (211) comprising SixNy,
second dielectric layer (212) comprising TiOx,
first seed layer (2131) comprising ZnAIOx,
absorbing layer (2132) comprising NiCrOx,
first infrared reflective layer (22),
barrier layer (23) comprising NiCrOx,
- third dielectric layer (241) comprising ZnAIOx,
- fourth dielectric layer (242) comprising SixNy, second seed layer (243) comprising ZnAIOx,
second infrared reflective layer (25),
second barrier layer (261) comprising NiCrOx,
fifth dielectric layer (262) comprising ZnAIOx,
- upper dielectric layer (263) comprising SiOxNy.
10. A low-e coated (20) glass (10) according to any one of the preceding claims, wherein the angular color change of said glass (10) in the range of 8° and 75° is at most 2 units.
PCT/TR2018/050662 2017-12-29 2018-11-06 Low-e coated glass WO2019132824A1 (en)

Applications Claiming Priority (2)

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TR2017/22929 2017-12-29
TR2017/22929A TR201722929A2 (en) 2017-12-29 2017-12-29 LOW-E COATED GLASS

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TR201819743A2 (en) * 2018-12-18 2020-07-21 Tuerkiye Sise Ve Cam Fabrikalari Anonim Sirketi HIGHLY SELECTIVE LOW-E COATED ARCHITECTURAL GLASS

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US20120164420A1 (en) * 2010-02-26 2012-06-28 Guardian Industries Corp., CRVC Articles including anticondensation and/or low-e coatings and/or methods of making the same
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