WO2022151703A1

WO2022151703A1 - Method for chip testing in wide temperature range working environment

Info

Publication number: WO2022151703A1
Application number: PCT/CN2021/108771
Authority: WO
Inventors: 于海超
Original assignee: 强一半导体（苏州）有限公司
Priority date: 2021-01-14
Filing date: 2021-07-27
Publication date: 2022-07-21
Also published as: CN112858885B; CN112858885A

Abstract

A method for chip testing in a wide temperature range working environment, belonging to the technical fields of precision testing and metering, micro-electro-mechanical systems, IC chip testing and probe cards. The method comprises a method for chip testing in a conventional-temperature working environment and a method for chip testing in an ultrahigh-temperature working environment, both of which comprise: firstly, adjusting a middle guide plate, so that a probe is bent towards one side under the action of the middle guide plate or is not bent; then, bringing the probe into contact with a bonding pad or a contact point of a bare chip; next, at a working environment temperature, forcibly pressing the probe and the bare chip, such that a bonding pad or contact point under test is in contact with the probe; and finally, writing a test program into the bare chip to complete testing. As a key technology in MEMS probe structures and testing methods for chip testing in an ultrahigh-temperature working environment, the present invention is conducive to ensuring effective contact between a bare chip and a probe in the ultrahigh-temperature working environment during a test process of a large-size or multi-test-point chip, and then facilitates testing of the chip.

Description

A chip testing method in a wide temperature range working environment

technical field

The invention relates to a chip testing method under a wide temperature range working environment, which belongs to the technical fields of precision testing and measurement, micro-electromechanical systems, IC chip testing and probe cards.

Background technique

A probe card is a device used to test bare dies. The performance of the chip is tested by contacting the probes to the pads or contacts of the bare die to form electrical connections, and by writing a test program to the chip.

A key technology to realize the test is that the probes must all be in contact with the pads or contacts of the bare die, which puts forward very high requirements on whether all probe ends are on the same plane. In this application, the extent to which the probe tips are in the same plane is defined as probe flatness. For a probe card with a small size and a small number of probes, the probe flatness is relatively easy to control, while for a probe card with a large size or a large number of probes, the probe flatness is difficult to control. If the flatness is low, some probes can effectively contact the die, while other probes cannot contact the die, resulting in poor overall contact and failure of the chip test.

In order to solve the above problems, we can increase the pressure between the die and the probe card, so that the probes that have effectively contacted the die are bent, so that the probes that cannot contact the die can be effectively contacted. However, this will create new technical problems. For the MEMS probe card, the distance between the probe and the probe is very close. When the probe is bent, it is very easy for the bent probe to contact other probes. In this case, a short circuit of the probe will be formed, which will cause the test to fail, and even damage the test chip and the probe card in severe cases.

For the problem that the probe is prone to short-circuit due to bending, we can refer to the structure disclosed in the invention patent "Probe Device of Vertical Probe Card" with application number 201711115635.6. In this application, the probe device includes a guide plate combination Structure, through the restriction of the middle guide plate, all the probes can only be bent in the same direction, thus effectively avoiding the problem of short circuit between the probes.

This kind of probe card with the combination structure of the guide plate can realize the bare core test work under most working conditions, however, there are still some bare core test work that cannot be completed, the reasons are as follows: In order to make the test real and effective, we need to ensure that the bare core test work The test environment is consistent with the working environment of the chip. Different chips have different operating temperatures. Some chips work in a high temperature environment of about 100 degrees Celsius, while some chips work in an ultra-high temperature environment of 200 degrees Celsius. For those chips that work in an ultra-high temperature environment, we also need to complete the test in the same temperature environment. Due to the limitation of the probe material, in such an ultra-high temperature environment, the probe will lose its elasticity. If you insist on using a structure such as an intermediate guide plate or If the probe is bent by the method, the plastic deformation of the probe cannot be rebounded, which not only fails to complete the test work of the bare core, but also damages the probe card in severe cases.

It can be seen that, although the solution provided by the invention patent "Probe Device for Vertical Probe Card" can be applied to most bare-chip testing work, it still cannot ensure large-size or During multi-point chip testing, there is effective contact between the die and the probes.

SUMMARY OF THE INVENTION

In order to solve the above problems, the present invention discloses a chip testing method in a wide temperature range working environment. As a key technology in the MEMS probe structure and testing method for chip testing in an ultra-high temperature working environment, it is beneficial to ensure ultra-high temperature. Under the working environment, during the testing of large-sized or multi-test point chips, the bare die and the probes are effectively contacted, which is beneficial to testing the chip.

The object of the present invention is achieved in this way:

A MEMS probe structure for chip testing in an ultra-high temperature working environment, a PCB board, an adapter board and a composite probe head structure are arranged in sequence from top to bottom, and the composite probe head structure includes an upper guide plate, a middle guide plate and a lower The guide plate, the probe starts from the adapter plate, passes through the upper guide plate and the middle guide plate, and protrudes from the lower guide plate; wherein, the upper guide plate, the middle guide plate and the lower guide plate are made of insulating material, and the probe is made of metal conductive material;

The probes include an upper probe installed on the upper guide plate, a middle probe through the middle guide plate and a lower probe installed on the lower guide plate;

The middle guide plate is provided with a through groove, the middle probe passes through the middle guide plate from the through groove, and the middle guide plate can move in a plane perpendicular to the probe to ensure that the probe can be bent in the same direction without short-circuiting;

The thermal expansion characteristics of each part are: the upper guide plate, the middle guide plate and the lower guide plate are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than 1/10 of the distance between the two adjacent probes; the upper probe and the lower The probe is between 100 degrees Celsius and 200 degrees Celsius, and has the characteristics of thermal expansion and cold contraction; the middle probe is between 100 degrees Celsius and 200 degrees Celsius, and has the characteristics of thermal expansion and cold expansion;

The bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures. Below degrees Celsius, the transition fit between the middle probe, the upper probe and the lower probe is transition fit; when the temperature changes from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe and the upper probe and the lower probe changes from transition fit to clearance fit.

In the above-mentioned MEMS probe structure for chip testing in an ultra-high temperature working environment, the middle probe is made of an alloy material containing at least one metal of antimony, bismuth or gallium.

A chip testing method under a wide temperature range working environment, including a chip testing method under a conventional temperature working environment and a chip testing method under an ultra-high temperature working environment;

The normal temperature working environment refers to the temperature range in which the working temperature is between 50 degrees Celsius and 150 degrees Celsius, and the probe can be elastically deformed. The steps of the test method are as follows:

Step a. Adjust the middle guide plate so that the middle guide plate is pressed to the side of the middle probe, so that the probe is bent to one side under the action of the middle guide plate;

Step b, contact the probe to the pad or contact of the bare die;

Step c, squeezing the probes and the bare core with force, so that all the pads or contacts to be detected on the bare core are in contact with the probes under the condition that all the probes have different degrees of bending;

Step d, write a test program to the bare core to complete the test;

The ultra-high temperature working environment refers to the temperature range in which the working temperature is above 150 degrees Celsius, and the probe no longer undergoes elastic deformation. The test method steps are as follows:

Step a. Adjust the middle guide plate so that the probe does not bend;

Step b, contact the probe to the pad or contact of the bare die;

Step c, adjusting the ambient temperature to the ultra-high temperature working ambient temperature, so that the transition fit between the middle probe and the upper probe and the lower probe is changed to a clearance fit;

Step d, squeeze the probe and the bare core with force, so that all the pads or contacts to be detected on the bare core are in contact with the probe without bending all the probes;

Step e, write a test program to the bare core, and complete the test;

A multi-parameter detection opto-mechanical computer-controlled integrated device for a multi-section MEMS probe, the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;

The multi-parameter detection opto-mechanical control integrated device for the multi-section MEMS probe includes: a laser, a first pinhole, a prism, an imaging objective lens, a test piece, a second pinhole, an image sensor, an object stage and a translation stage ;

The tested part is an upper probe, a middle probe or a lower probe;

The laser beam emitted by the laser passes through the first pinhole to form a point light source, and the light beam transmitted by the point light source passes through the prism and the imaging objective lens successively, then converges on the upper surface of the tested object, is reflected by the tested object, and then successively passes through the imaging objective lens. After being combined with the prism, it is reflected to the second pinhole, and the light beam transmitted from the second pinhole is received by the image sensor, and the image data is transmitted to the computer for processing;

The laser, the first pinhole, the prism, the imaging objective lens, the second pinhole and the image sensor are carried by the translation stage and can move in the horizontal plane to scan the upper surface of the tested object;

The object stage includes a fixed stage and a loading stage, the surface to be tested of the tested object is coated with light reflection, and the upper surface of the loading stage is coated with light absorption.

A multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe, wherein the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, and the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;

The multi-parameter detection opto-mechanical control integration method for the multi-section MEMS probe includes the following steps:

Step a. Open the upper reference table and loading table:

Open the upper reference platform and the loading platform. At this time, the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform and the upper reference platform are on the same level;

Step b. Adjust the stage:

Make the center of the test piece on the scanning line of the laser beam;

Step c. Scan the DUT:

Turn on the laser, move the translation stage at a constant speed, and the image sensor obtains a series of spot images f ₁ (x,y),f ₂ (x,y),...,f _n (x,y) with different grayscales, where, (x,y) represents pixel coordinates;

Step d. Create an array:

Combine each spot image and the time at which the spot image was obtained into an array, as follows:

[f ₁ (x,y),t ₁ ],[f ₂ (x,y),t ₂ ],...,[f _n (x,y),t _n ]

Step e, image processing:

The gray value of each image obtained by the image sensor is accumulated to obtain the accumulated image, as follows:

And arrange them in chronological order to obtain a set of grayscale matrices, as follows:

Step f. Determine the type of the DUT:

If the grayscale vector f ₁ ',f ₂ ',...,f _n ' has two rectangular waves, the DUT is the upper probe or the lower probe, if the gray vector f ₁ ',f ₂ ', ...,f _n ' has a rectangular wave, the DUT is the middle probe;

Step g, the key parameters of extraction time:

If the DUT is the upper probe or the lower probe, extract the accumulated image f _i ' corresponding to the falling edge of the left rectangular wave and its corresponding time t _i and the accumulated image f _j ' corresponding to the rising edge of the right rectangular wave and It corresponds to time t _j , and records the time interval |t _j -t _i | of the two accumulated images;

If the DUT is a middle probe, extract the accumulated image f _i ' corresponding to the rising edge of the rectangular wave and its corresponding time t _i and the accumulated image f _j ' and its corresponding time t _j corresponding to the falling edge, and record the The time interval |t _j -t _i | of the two accumulated images;

Step h, calculate the key parameters of size:

According to the time key parameters t _i and t _j extracted in step g, the object distance of the imaging objective is l ₁ , the image distance is l ₂ , and the moving speed v of the translation stage, the key size parameter d is obtained as:

The dimensional key parameter d is the diameter of the middle probe or the inner ring diameter of the upper probe hole or the inner ring diameter of the lower probe hole.

A probe loading stage for measuring critical dimensions of a multi-section MEMS probe, the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, and the bottom of the upper probe is provided with a hole, so the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;

The probe loading stage for measuring the critical dimension of the multi-section MEMS probe includes a fixed stage and a loading stage, and the fixed stage and the loading stage are connected by a rotating shaft;

The fixed platform includes a lower bearing platform and an upper reference platform. One side of the lower bearing platform is wider than the upper reference platform. On the side surface, the upper reference platform is connected to the loading platform through a rotating shaft, and the upper reference platform is connected to the loading platform. The thickness is the same. After the upper reference platform and the loading platform are folded, the upper surface of the loading platform coincides with the upper reference platform. After the upper reference platform and the loading platform are opened, the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform It is on the same level as the upper reference platform;

The loading table is a frame-like structure, the side of the loading table is provided with an extrusion structure, and the other side opposite to the upper reference table is provided with a vertical adjustment bracket, and the end of the vertical adjustment bracket is provided with a lifting plate, The lifting plate can be adjusted up and down along the vertical adjustment bracket; the surface to be tested of the test piece and the upper surface of the loading table are located on the same level, and the other end face of the test piece is in contact with the lifting plate and is in contact with the viscous material coated on the surface of the lifting plate. paste;

The surface to be tested of the test piece is reflectively coated, and the upper surface of the loading table is coated with light absorption.

A probe loading method for critical dimension measurement of a multi-section MEMS probe, the multi-section MEMS probe comprises an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, and the lower probe is provided with a hole. The top of the probe is provided with a hole, and the middle probe is inserted into the hole of the upper probe and the hole of the lower probe respectively, forming two sets of hole-shaft matching structures;

The probe loading method for critical dimension measurement of a multi-section MEMS probe includes the following steps:

Step a, reflective coating on the surface to be measured of the test piece, and light absorption coating on the upper surface of the loading platform, where the test piece is an upper probe, a middle probe or a lower probe;

Step b. After the upper reference table and the loading table are folded, the object to be tested faces downward, and the edge is placed in the frame-like structure of the loading table;

Step c, adjusting the temperature of the test environment to normal temperature or the working environment temperature of the bare core, so that the upper probe or the lower probe completes thermal expansion and cold contraction or the middle probe completes thermal contraction and cold expansion;

Step d, adjust the extrusion structure, and fix the test piece in the frame-like structure of the loading table with the extrusion structure, so as to avoid the test piece from shaking when the lifting plate squeezes the test piece, resulting in inaccurate parameter test of the test piece;

Step e. Adjust the lift plate so that the lift plate is pressed on the test piece, the sticky material coated on the surface of the lift plate sticks to the test piece, and the lift plate is fixed;

Step f, adjusting the extrusion structure to separate the tested piece from the extrusion structure, so as to avoid the deformation of the tested piece when the extrusion structure squeezes the tested piece, resulting in inaccurate parameter testing of the tested piece;

Step g. Open the upper reference platform and the loading platform. At this time, the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform and the upper reference platform are located on the same horizontal plane.

Beneficial effects:

First, the present invention discloses a MEMS probe structure for chip testing in an ultra-high temperature working environment. The key structure is that the probe includes an upper probe installed on the upper guide plate, a middle probe passing through the middle guide plate, and a lower probe installed on the lower guide plate. The lower probe of the guide plate; at the same time, the upper guide plate, the middle guide plate and the lower guide plate are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than 1/10 of the distance between the two adjacent probes; the upper probe and the lower The probe is between 100 degrees Celsius and 200 degrees Celsius, and has thermal expansion and cold contraction characteristics; the middle probe is between 100 degrees Celsius and 200 degrees Celsius, and has thermal contraction and cold expansion characteristics; and the bottom of the upper probe is provided with holes, the said The top of the lower probe is provided with a hole, and the middle probe is inserted into the hole of the upper probe and the hole of the lower probe respectively, forming two sets of hole-shaft matching structures. Below 100 degrees Celsius, the middle probe and the upper probe and the lower probe There is a transition fit between the needles; when the temperature changes from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe, the upper probe and the lower probe changes from a transition fit to a clearance fit; the above structure, thermal expansion and contraction characteristics and hole-shaft fit relationship Under the indispensable conditions, the test work of the chip under the working environment of most ordinary temperature can be realized, and the test work of the chip under the working environment of ultra-high temperature can be realized.

Second, the present invention is a MEMS probe structure for chip testing in an ultra-high temperature working environment. Since the temperature is below 100 degrees Celsius, the middle probe, the upper probe and the lower probe are transitional fit; at 100 degrees Celsius to 200 degrees Celsius When changing, the transition fit between the middle probe and the upper probe and the lower probe changes from a transition fit to a clearance fit; this special structure can automatically adjust the length of the probe in the ultra-high temperature working environment, naturally realizing all the parts on the bare core. The pads or contacts to be inspected all have probe contacts. Compared with the prior art, the most significant feature is that the probe part does not need to be kept at a low temperature, that is, the cooling system that must be sub-micron is saved, and the probe is reduced. Card production cost and production difficulty.

Thirdly, the present invention also provides a chip testing method in a wide temperature range working environment for the MEMS probe structure for chip testing in an ultra-high temperature working environment.

Fourth, for a multi-section MEMS probe structure with an upper probe, a middle probe and a lower probe, and at the same time to ensure that the temperature is below 100 degrees Celsius, the middle probe, the upper probe and the lower probe are transition fit, When changing from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe and the upper probe and the lower probe changes from a transition fit to a clearance fit; the detection of the key dimensions of the probe is particularly important, however, because the structure of the probe is a new design Therefore, the device for detecting this multi-section MEMS probe cannot be consulted. In view of this problem, the present invention also provides a multi-parameter detection optical-mechanical-computer-control integration device and method for a multi-section MEMS probe. The device includes a laser, a first pinhole, a prism, an imaging objective, a DUT, a second pinhole, an image sensor, a stage and a translation stage; the laser, the first pinhole, the prism, the imaging objective, the second pinhole and The image sensor is carried by the translation stage, which can move in the horizontal plane to scan the upper surface of the test piece; the stage includes a fixed stage and a loading stage, the test surface of the test piece is reflective coating, and the upper surface of the loading stage is light-absorbing coating , to clearly distinguish whether the DUT is scanned; this method first opens the upper reference stage and the loading stage, then adjusts the stage, scans the DUT, then establishes an array, performs image processing, determines the type of the DUT, and finally extracts Time-critical parameters, calculation size-critical parameters; under the multi-parameter detection opto-mechanical-computer-control integration device and method for multi-section MEMS probes of the present invention, only the translation stage needs to simultaneously carry the laser, the first pinhole, the prism, the imaging objective lens, When the second pinhole and the image sensor move at a uniform speed, the scanning detection of the key parameters of the multi-section MEMS probe of the present invention can be realized.

Fifth, although the present invention provides a multi-parameter detection opto-mechanical-computer-control integration device and method for multi-section MEMS probes, the device and method adopt the principle of optical microscopy, however, the key premise of this technology is to be The measuring surface must be confocal with the second pinhole. At the same time, under the sub-micron size of the MEMS element, the small deformation may cause inaccurate detection, so the multi-section MEMS probe structure cannot be directly clamped by the fixture. The requirement of precise placement without direct clamping brings considerable difficulties to the placement of the multi-section MEMS probe structure. Therefore, the present invention also provides a multi-section MEMS probe key dimension measurement probe. A needle loading stage and a probe loading method for critical dimension measurement of a multi-section MEMS probe, the probe loading stage includes a fixed stage and a loading stage, and the fixed stage and the loading stage are connected by a rotating shaft; the fixed stage includes The lower loading platform and the upper reference platform; the side of the loading platform is provided with an extrusion structure, and the other side connected to the upper reference platform is provided with a vertical adjustment bracket, and the end of the vertical adjustment bracket is provided with a lifting plate; The surface to be tested and the upper surface of the loading table are on the same level, and the other end face of the test piece is in contact with the lift plate; this method first coats the test piece with reflective coating, absorbs light on the loading table, and then folds the upper reference table and the loading table, The part to be tested faces downward, and the edge is placed in the frame-like structure of the loading table, and then the temperature is adjusted, the extrusion structure is adjusted, the test piece is fixed in the frame-like structure of the loading table with the extrusion structure, and then the lifting plate is adjusted. , make the lifting plate stick to the test piece, separate the test piece from the extrusion structure, and finally open the upper reference table and the loading table; under the above structure and method, the test surface of the probe is guaranteed by the upper reference table Confocal with the second pinhole; the multi-section MEMS probe structure is fixed from the upper and lower directions through the upper reference stage and the lifting plate, and the multi-section MEMS probe structure is pasted by the adhesive material coated on the surface of the lifting plate, and the sticking position is not In this way, the extrusion structure can be released, so that the multi-section MEMS probe structure is not clamped during the test process, which effectively avoids the problem of inaccurate measurement caused by elastic deformation caused by the multi-section MEMS probe structure being clamped.

Description of drawings

FIG. 1 is a schematic structural diagram of a MEMS probe for chip testing in an ultra-high temperature working environment according to the present invention.

2 is a flow chart of a chip testing method under a conventional temperature working environment in the chip testing method under a wide temperature range working environment of the present invention.

FIG. 3 is a flow chart of the chip testing method under the ultra-high temperature working environment in the chip testing method under the wide temperature range working environment of the present invention.

4 is a schematic structural diagram of a multi-parameter detection opto-mechanical-control integrated device for a multi-section MEMS probe according to the present invention.

FIG. 5 is a flow chart of an integrated opto-mechanical control method for multi-parameter detection of a multi-section MEMS probe according to the present invention.

6 is a schematic diagram of the measurement principle when the object to be tested is an upper probe or a lower probe in the multi-parameter detection opto-mechanical control integration method for multi-section MEMS probes of the present invention.

FIG. 7 is a schematic diagram of the measurement principle when the object under test is the middle probe in the multi-parameter detection opto-mechanical-control integration method for the multi-section MEMS probe of the present invention.

8 is a schematic structural diagram of the probe loading stage for measuring the critical dimension of the multi-section MEMS probe according to the present invention after the upper reference stage and the loading stage are folded.

9 is a schematic structural diagram of the probe loading stage for measuring the critical dimension of the multi-section MEMS probe according to the present invention after the upper reference stage and the loading stage are opened.

FIG. 10 is a flow chart of a probe loading method for critical dimension measurement of a multi-section MEMS probe according to the present invention.

In the figure: 1 composite probe head structure, 1-1 upper guide plate, 1-2 middle guide plate, 1-3 lower guide plate, 1-4 probe, 1-4-1 upper probe, 1-4-2 middle probe needle, 1-4-3 lower probe, 2 adapter board, 3PCB board, 4-1 laser, 4-2 first pinhole, 4-3 prism, 4-4 imaging objective lens, 4-5 DUT, 4-6 second pinhole, 4-7 image sensor, 4-8 stage, 4-8-1 fixed stage, 4-8-1-1 lower stage, 4-8-1-2 upper reference stage , 4-8-2 loading platform, 4-8-3 shaft, 4-8-4 extrusion structure, 4-8-5 vertical adjustment bracket, 4-8-6 lifting plate, 4-9 translation platform.

Detailed ways

The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

Specific implementation one

The following is a specific embodiment of the MEMS probe structure for chip testing in an ultra-high temperature working environment of the present invention.

A schematic diagram of the MEMS probe structure for chip testing in an ultra-high temperature working environment in this embodiment is shown in FIG. 1 . The MEMS probe structure is provided with a PCB board 3 , an adapter board 2 and a composite probe in sequence from top to bottom. Head structure 1, the composite probe head structure 1 includes an upper guide plate 1-1, a middle guide plate 1-2 and a lower guide plate 1-3, the probes 1-4 start from the adapter plate 2 and pass through the upper guide plate 1-1 After connecting with the middle guide plate 1-2, it extends from the lower guide plate 1-3; wherein, the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are made of insulating materials, and the probes 1-4 are made of metal conductive material;

The probes 1-4 include an upper probe 1-4-1 installed on the upper guide plate 1-1, a middle probe 1-4-2 passing through the middle guide plate 1-2 and a lower part installed on the lower guide plate 1-3 Probe 1-4-3;

The middle guide plate 1-2 is provided with a through groove, and the middle probe 1-4-2 passes through the middle guide plate 1-2 from the through groove, and the middle guide plate 1-2 can be perpendicular to the plane of the probe 1-4. Internal movement to ensure that probes 1-4 can bend in the same direction without short-circuiting;

The thermal expansion characteristics of each part are that the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than the distance between two adjacent probes. 1/10; The upper probe 1-4-1 and the lower probe 1-4-3 are between 100 degrees Celsius and 200 degrees Celsius, with thermal expansion and cold contraction characteristics; the middle probe 1-4-2 is between 100 degrees Celsius and 200 degrees Celsius Between degrees Celsius, it has the characteristics of thermal contraction and cold expansion;

The bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, and the middle probe 1-4-2 is respectively inserted into the upper probe 1-4-1 Two sets of hole and shaft matching structures are formed in the hole of the lower probe 1-4-3. Below 100 degrees Celsius, the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1 -4-3 is a transition fit; when changing from 100 degrees Celsius to 200 degrees Celsius, there is a transition fit between the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1-4-3 Convert to clearance fit.

Specific embodiment two

The MEMS probe structure for chip testing in an ultra-high temperature working environment in this embodiment is based on the specific embodiment 1, and further defines that the middle probe 1-4-2 is made of at least one of antimony, bismuth or gallium. Made of metal alloy material. Since antimony, bismuth, and gallium are all substances that expand and contract with heat, they are often used to make alloys to reduce the effect of temperature on precision instruments. Therefore, using them to make the middle probe 1-4-2 can not only meet the electrical conductivity, but also can Realize thermal shrinkage and cold expansion characteristics.

In addition, the nickel sulfide used to make the tempered glass self-explode is also a substance that expands and contracts with cold, and can also be used to make the middle probe 1-4-2.

Specific embodiment three

The following is a specific embodiment of the chip testing method under a wide temperature range working environment of the present invention.

The chip testing method in the wide temperature range working environment in this embodiment is implemented on the MEMS probe structure for chip testing in the ultra-high temperature working environment described in the specific embodiment 1 or the specific embodiment 2. The wide temperature range working environment The chip testing method includes a chip testing method under a conventional temperature working environment and a chip testing method under an ultra-high temperature working environment. Among them, the flow chart of the chip testing method under the conventional temperature working environment is shown in Figure 2, and the chip testing method flow under the ultra-high temperature working environment is shown in Figure 2. The figure is shown in Figure 3;

The normal temperature working environment refers to the temperature range where the working temperature is between 50 degrees Celsius and 150 degrees Celsius, and the probes 1-4 can be elastically deformed. The test method steps are as follows:

Step a. Adjust the middle guide plate 1-2 so that the middle guide plate 1-2 is pressed to the side of the middle probe 1-4-2, so that the probe 1-4 is bent to one side under the action of the middle guide plate 1-2 ;

Step b, contact the probes 1-4 to the pads or contacts of the bare die;

Step c. Forcefully squeeze the probes 1-4 and the bare core, so that when all the probes 1-4 have different degrees of bending, all the pads or contacts to be detected on the bare core have the probes 1-4 touch;

Step d, write a test program to the bare core to complete the test;

The ultra-high temperature working environment refers to the temperature range in which the working temperature is above 150 degrees Celsius, and the probes 1-4 no longer elastically deform. The test method steps are as follows:

Step a. Adjust the middle guide plate 1-2 so that the probes 1-4 do not bend;

Step b, contact the probes 1-4 to the pads or contacts of the bare die;

Step c. Adjust the ambient temperature to the ultra-high temperature working ambient temperature, so that the transition fit between the middle probe 1-4-2, the upper probe 1-4-1 and the lower probe 1-4-3 is changed to a clearance fit ;

Step d, squeeze the probes 1-4 and the bare core with force, so that all the probes 1-4 are in contact with the probes 1-4 on all the pads or contacts to be detected on the bare core without being bent;

Step e, write a test program to the bare core to complete the test.

Specific embodiment four

The following is a specific embodiment of the multi-parameter detection opto-mechanical-computer-control integrated device for a multi-section MEMS probe of the present invention.

The multi-section MEMS probe in this embodiment uses a multi-parameter detection opto-mechanical-computer-control integrated device, in conjunction with the MEMS probe structure for chip testing in the ultra-high temperature working environment described in the specific embodiment 1 or the specific embodiment 2 and the specific The chip testing method in the wide temperature range working environment described in the third embodiment is used; the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4- 3. The bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, and the middle probe 1-4-2 is inserted into the upper probe 1-4 respectively In the hole of -1 and the hole of the lower probe 1-4-3, two sets of hole-shaft matching structures are formed, as shown in Figure 1;

The multi-parameter detection opto-mechanical control integrated device for the multi-section MEMS probe, the schematic diagram is shown in Figure 4, the multi-section MEMS probe for the multi-parameter detection of the opto-mechanical control integration device includes: laser 4-1 , the first pinhole 4-2, the prism 4-3, the imaging objective lens 4-4, the DUT 4-5, the second pinhole 4-6, the image sensor 4-7, the stage 4-8 and the translation stage 4-9;

The tested piece 4-5 is the upper probe 1-4-1, the middle probe 1-4-2 or the lower probe 1-4-3;

The laser beam emitted by the laser 4-1 passes through the first pinhole 4-2 to form a point light source, and the light beam transmitted by the point light source passes through the prism 4-3 and the imaging objective lens 4-4 successively, and then converges to the measured object 4-4. 5. The upper surface is reflected by the DUT 4-5, and then passes through the imaging objective lens 4-4 and the prism 4-3 successively, and then is reflected to the second pinhole 4-6, and the light beam transmitted from the second pinhole 4-6, Received by the image sensor 4-7, and transmits the image data to the computer for processing;

The laser 4-1, the first pinhole 4-2, the prism 4-3, the imaging objective lens 4-4, the second pinhole 4-6 and the image sensor 4-7 are carried by the translation stage 4-9 and can Internal movement to scan the upper surface of the DUT 4-5;

The object stage 4-8 includes a fixed stage 4-8-1 and a loading stage 4-8-2, the surface to be measured of the tested object 4-5 is reflectively coated, and the upper surface of the loading stage 4-8-2 is Absorbent coating.

It should be noted that, in FIG. 4 , the relationship between the object under test 4-5 and the stage 4-8 is only a schematic relationship, not a real relative position and connection relationship.

Specific implementation five

The following is a specific embodiment of the multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe of the present invention.

The opto-mechanical-computer-control integration method for multi-parameter detection for multi-section MEMS probes in this embodiment is implemented on the opto-mechanical-computer-control integration device for multi-parameter detection for multi-section MEMS probes described in the fourth specific embodiment. In the multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe, the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1- 4-3, the bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, the middle probe 1-4-2 is respectively inserted into the upper probe 1 In the hole of -4-1 and the hole of the lower probe 1-4-3, two sets of hole-shaft matching structures are formed, as shown in Figure 1;

The multi-parameter detection opto-mechanical control integration method for the multi-section MEMS probe, the flow chart is shown in Figure 5, the multi-section MEMS probe multi-parameter detection opto-mechanical control integration method includes the following steps:

Step a. Open the upper reference table 4-8-1-2 and the loading table 4-8-2:

Open the upper reference table 4-8-1-2 and the loading table 4-8-2. At this time, the lower surface of the loading table 4-8-2 is supported by the lower bearing table 4-8-1-1, and the loading table 4 - The upper surface of 8-2 is at the same level as the upper reference table 4-8-1-2;

Step b. Adjust the stage 4-8:

Make the center of DUT 4-5 on the scanning line of the laser beam;

Step c. Scan the DUT 4-5:

Turn on the laser 4-1, move the translation stage 4-9 at a constant speed, and obtain a series of spot images f ₁ (x,y),f ₂ (x,y),...,f with the image sensor 4-7 _n (x, y), where (x, y) represents pixel coordinates;

Step d. Create an array:

[f ₁ (x,y),t ₁ ],[f ₂ (x,y),t ₂ ],...,[f _n (x,y),t _n ]

Step e, image processing:

Step f. Determine the type of DUT 4-5:

If the grayscale vectors f ₁ ', _f ₂ ', . , if the gray-scale vectors f ₁ ', f ₂ ',..., f _n ' have a rectangular wave, the DUT 4-5 is the middle probe 1-4-2;

Step g, the key parameters of extraction time:

If the DUT 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, extract the accumulated image f _i ' corresponding to the falling edge of the left rectangular wave and its corresponding time t _i and the right The accumulated image f _j ' corresponding to the rising edge of the rectangular wave and its corresponding time t _j , and the time interval |t _j -t _i | of the two accumulated images is recorded;

If the DUT 4-5 is the middle probe 1-4-2, extract the accumulated image f _i ' corresponding to the rising edge of the rectangular wave and its corresponding time t _i and the accumulated image f _j ' corresponding to the falling edge and its corresponding time t _j , and record the time interval |t _j -t _i | of the two accumulated images;

Step h, calculate the key parameters of size:

According to the time key parameters t _i and t _j extracted in step g, the object distance of the imaging objective lens 4-4 is l ₁ , the image distance is l ₂ , and the moving speed v of the translation stage 4-9, the key size parameter d is obtained as:

The dimension key parameter d is the diameter of the middle probe 1-4-2 or the inner ring diameter of the upper probe 1-4-1 hole or the inner ring diameter of the lower probe 1-4-3 hole.

Among them, if the DUT 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, the schematic diagram of the measurement principle is shown in Figure 6; if the DUT 4-5 is the middle probe 1- 4-2, the schematic diagram of the measurement principle is shown in Figure 7;

Specific embodiment six

The following is the specific embodiment of the probe loading stage for the critical dimension measurement of the multi-section MEMS probe of the present invention.

The probe loading stage for measuring the critical dimensions of multi-section MEMS probes in this embodiment is combined with the multi-parameter detection opto-mechanical-computer-control integration device for multi-section MEMS probes described in the fourth embodiment and the fifth embodiment. The multi-section MEMS probe is used in the multi-parameter detection optical-mechanical-computer-control integration method; in the multi-section MEMS probe critical dimension measurement probe loading stage, the multi-section MEMS probe includes an upper probe 1-4-1, the middle probe 1-4-2 and the lower probe 1-4-3, the bottom of the upper probe 1-4-1 is provided with a hole, the lower probe 1-4-3 There is a hole at the top of the probe, and the middle probe 1-4-2 is inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3 respectively, forming two sets of hole-shaft matching structures, as shown in Figure 1 shown;

The probe loading stage for measuring the critical dimension of the multi-section MEMS probe is shown in Fig. 8 and Fig. 9 . The probe loading stage for measuring the critical dimension of the multi-section MEMS probe includes a fixed table 4- 8-1 and the loading platform 4-8-2, the fixed platform 4-8-1 and the loading platform 4-8-2 are connected by the rotating shaft 4-8-3;

The fixing platform 4-8-1 includes a lower bearing platform 4-8-1-1 and an upper reference platform 4-8-1-2. One side of the lower bearing platform 4-8-1-1 is wider than the upper one. The reference table 4-8-1-2, on the side, the upper reference table 4-8-1-2 is connected with the loading table 4-8-2 through the rotating shaft 4-8-3, the upper reference table 4-8 -1-2 is the same thickness as the loading table 4-8-2, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the upper surface of the loading table 4-8-2 and the upper reference The table 4-8-1-2 overlaps, as shown in Figure 8, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are opened, the lower surface of the loading table 4-8-2 is replaced by the lower The loading platform 4-8-1-1 is supported, and the upper surface of the loading platform 4-8-2 and the upper reference platform 4-8-1-2 are located on the same horizontal plane. As shown in FIG. 9, the horizontal plane is the image sensor 4- 7's image plane;

The loading table 4-8-2 is a frame-like structure, and the side of the loading table 4-8-2 is provided with an extrusion structure 4-8-4, which is opposite to the other side connected to the upper reference table 4-8-1-2 , is provided with a vertical adjustment bracket 4-8-5, the end of the vertical adjustment bracket 4-8-5 is provided with a lift plate 4-8-6, the lift plate 4-8-6 can be vertically adjusted Adjust the bracket 4-8-5 up and down; the surface to be tested of the DUT 4-5 is on the same level as the upper surface of the loading table 4-8-2, and the other end face of the DUT 4-5 is in contact with the lift plate 4-8 -6, and paste it with the sticky material coated on the surface of the lift plate 4-8-6;

The surface to be tested 4-5 is coated with a reflective coating, and the upper surface of the loading platform 4-8-2 is coated with light absorption.

Specific embodiment seven

The following is a specific embodiment of the probe loading method for critical dimension measurement of a multi-section MEMS probe of the present invention.

The probe loading method for critical dimension measurement of multi-section MEMS probes in this embodiment is implemented on the probe loading stage for critical dimension measurement of multi-section MEMS probes described in the specific embodiment 6. In the probe loading method for probe critical dimension measurement, the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4-3, the upper probe The bottom of the probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, and the middle probe 1-4-2 is inserted into the hole and the upper probe 1-4-1 respectively. In the holes of the lower probe 1-4-3, two sets of hole-shaft matching structures are formed, as shown in Figure 1;

The flow chart of the probe loading method for critical dimension measurement of multi-section MEMS probes is shown in FIG. 10 , and the probe loading method for critical dimension measurement of multi-section MEMS probes includes the following steps:

Step a. Reflective coating on the surface to be measured of the DUT 4-5, and absorbing coating on the upper surface of the loading table 4-8-2. The DUT 4-5 is the upper probe 1-4-1, the middle Probe 1-4-2 or lower probe 1-4-3;

Step b. After the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the object to be tested 4-5 faces downward, and the edge is placed on the loading table 4-8-2 frame. in structure;

Step c. Adjust the test environment temperature to room temperature or the bare core working environment temperature, so that the upper probe 1-4-1 or the lower probe 1-4-3 can be thermally expanded and contracted or the middle probe 1-4-2 can be completed. heat shrink and cold rise;

Step d, adjust the extrusion structure 4-8-4, and fix the test piece 4-5 in the frame structure of the loading table 4-8-2 with the extrusion structure 4-8-4, so as to avoid the lifting plate 4-8- 6 When the DUT 4-5 is squeezed, the DUT 4-5 is shaken, resulting in inaccurate parameter testing of the DUT 4-5;

Step e. Adjust the lifting plate 4-8-6 so that the lifting plate 4-8-6 is pressed on the DUT 4-5, and the adhesive material coated on the surface of the lifting plate 4-8-6 sticks to the DUT 4. -5, and fix the lifting plate 4-8-6;

Step f, adjust the extrusion structure 4-8-4, separate the tested piece 4-5 from the extrusion structure 4-8-4, and avoid the extrusion structure 4-8-4 from pressing the tested piece 4-5. DUT 4-5 is deformed, resulting in inaccurate parameter test of DUT 4-5;

Step g, open the upper reference platform 4-8-1-2 and the loading platform 4-8-2, at this time, the lower surface of the loading platform 4-8-2 is supported by the lower bearing platform 4-8-1-1, The upper surface of the loading table 4-8-2 and the upper reference table 4-8-1-2 are located on the same level.

It should be noted that, in the above embodiments, as long as the technical solutions that are not contradictory can be permuted and combined, because those skilled in the art can exhaust all permutation and combination results according to the mathematical knowledge of permutation and combination learned in high school, Therefore, these results are not listed one by one in this application, but it should be understood that each permutation and combination result is recorded in this application.

It should also be noted that the above embodiments are only exemplary descriptions of this patent, and do not limit its protection scope. Those skilled in the art can also make partial changes to it, as long as it does not exceed the spirit of this patent, it is within the scope of this patent. within the scope of protection.

Claims

A chip testing method under a wide temperature range working environment, characterized in that it includes a chip testing method under a normal temperature working environment and a chip testing method under an ultra-high temperature working environment;

The normal temperature working environment refers to a temperature range in which the working temperature is between 50 degrees Celsius and 150 degrees Celsius, and the probes (1-4) can be thrown into elastic deformation. The steps of the test method are as follows:

Step a. Adjust the middle guide plate (1-2) so that the middle guide plate (1-2) is squeezed to the side of the middle probe (1-4-2), so that the probe (1-4) is in the middle guide plate (1-4-2). 2), bend to one side;

Step b, contact the probes (1-4) to the pads or contacts of the bare chip;

Step c. Forcefully squeeze the probes (1-4) and the bare core, so that under the condition that all the probes (1-4) have different degrees of bending, all the pads or contacts to be detected on the bare core have probes. Needle (1-4) contacts;

Step d, write a test program to the bare core to complete the test;

The ultra-high temperature working environment refers to the temperature range in which the working temperature is above 150 degrees Celsius, and the probes (1-4) no longer undergo elastic deformation. The steps of the test method are as follows:

Step a. Adjust the middle guide plate (1-2) so that the probe (1-4) does not bend;

Step b, contact the probes (1-4) to the pads or contacts of the bare chip;

Step c. Adjust the ambient temperature to the ultra-high temperature working ambient temperature, so that the middle probe (1-4-2) and the upper probe (1-4-1) and the lower probe (1-4-3) are separated by The transition fit is converted to a clearance fit;

Step d, squeeze the probes (1-4) and the bare core with force, so that all the probes (1-4) have probes ( 1-4) Contact;

Step e, write a test program to the bare core to complete the test.