WO2022151702A1 - Multi-parameter detection opto-mechatronics calculation and control integration apparatus for multi-section mems probe - Google Patents
Multi-parameter detection opto-mechatronics calculation and control integration apparatus for multi-section mems probe Download PDFInfo
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- WO2022151702A1 WO2022151702A1 PCT/CN2021/108770 CN2021108770W WO2022151702A1 WO 2022151702 A1 WO2022151702 A1 WO 2022151702A1 CN 2021108770 W CN2021108770 W CN 2021108770W WO 2022151702 A1 WO2022151702 A1 WO 2022151702A1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2806—Apparatus therefor, e.g. test stations, drivers, analysers, conveyors
- G01R31/2808—Holding, conveying or contacting devices, e.g. test adapters, edge connectors, extender boards
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
- G01R1/07371—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate card or back card with apertures through which the probes pass
Definitions
- the invention relates to a multi-parameter detection opto-mechanical-computer-control integrated device for a multi-section MEMS probe, belonging to the technical fields of precision measurement and measurement, micro-electro-mechanical systems, IC chip testing and probe cards.
- a probe card is a device used to test bare dies. The performance of the chip is tested by contacting the probes to the pads or contacts of the bare die to form electrical connections, and by writing a test program to the chip.
- probe flatness the extent to which the probe tips are in the same plane is defined as probe flatness.
- the probe flatness is relatively easy to control, while for a probe card with a large size or a large number of probes, the probe flatness is difficult to control. If the flatness is low, some probes can effectively contact the die, while other probes cannot contact the die, resulting in poor overall contact and chip test failure.
- the probe device includes a guide plate combination Structure, through the restriction of the middle guide plate, all the probes can only be bent in the same direction, thus effectively avoiding the problem of short circuit between the probes.
- the present invention discloses a multi-parameter detection opto-mechanical-computer-control integration device for a multi-section MEMS probe, which is a key point in the MEMS probe structure and test method for chip testing in an ultra-high temperature working environment
- the technology helps to ensure that in the ultra-high temperature working environment, during the testing of large-sized or multi-test point chips, the bare die and the probes are effectively contacted, thereby facilitating the testing of the chip.
- a MEMS probe structure for chip testing in an ultra-high temperature working environment a PCB board, an adapter board and a composite probe head structure are arranged in sequence from top to bottom, and the composite probe head structure includes an upper guide plate, a middle guide plate and a lower The guide plate, the probe starts from the adapter plate, passes through the upper guide plate and the middle guide plate, and protrudes from the lower guide plate; wherein, the upper guide plate, the middle guide plate and the lower guide plate are made of insulating material, and the probe is made of metal conductive material;
- the probes include an upper probe installed on the upper guide plate, a middle probe through the middle guide plate and a lower probe installed on the lower guide plate;
- the middle guide plate is provided with a through groove, the middle probe passes through the middle guide plate from the through groove, and the middle guide plate can move in a plane perpendicular to the probe to ensure that the probe can be bent in the same direction without short-circuiting;
- the thermal expansion characteristics of each part are: the upper guide plate, the middle guide plate and the lower guide plate are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than 1/10 of the distance between the two adjacent probes; the upper probe and the lower The probe is between 100 degrees Celsius and 200 degrees Celsius, and has the characteristics of thermal expansion and cold contraction; the middle probe is between 100 degrees Celsius and 200 degrees Celsius, and has the characteristics of thermal expansion and cold expansion;
- the bottom of the upper probe is provided with a hole
- the top of the lower probe is provided with a hole
- the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures.
- the transition fit between the middle probe, the upper probe and the lower probe is a transition fit; when the temperature changes from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe, the upper probe and the lower probe changes from a transition fit to a clearance fit.
- the middle probe is made of an alloy material containing at least one metal of antimony, bismuth or gallium.
- a chip testing method under a wide temperature range working environment including a chip testing method under a conventional temperature working environment and a chip testing method under an ultra-high temperature working environment;
- the normal temperature working environment refers to the temperature range in which the working temperature is between 50 degrees Celsius and 150 degrees Celsius, and the probe can be elastically deformed.
- the steps of the test method are as follows:
- Step a Adjust the middle guide plate so that the middle guide plate is pressed to the side of the middle probe, so that the probe is bent to one side under the action of the middle guide plate;
- Step b contact the probe to the pad or contact of the bare die
- Step c squeezing the probes and the bare core with force, so that all the pads or contacts to be detected on the bare core are in contact with the probes under the condition that all the probes have different degrees of bending;
- Step d write a test program to the bare core to complete the test
- the ultra-high temperature working environment refers to the temperature range in which the working temperature is above 150 degrees Celsius, and the probe no longer undergoes elastic deformation.
- the test method steps are as follows:
- Step a Adjust the middle guide plate so that the probe does not bend
- Step b contact the probe to the pad or contact of the bare die
- Step c adjusting the ambient temperature to the ultra-high temperature working ambient temperature, so that the transition fit between the middle probe and the upper probe and the lower probe is changed to a clearance fit;
- Step d squeeze the probe and the bare core with force, so that all the pads or contacts to be detected on the bare core are in contact with the probe without bending all the probes;
- Step e write a test program to the bare core to complete the test.
- a multi-parameter detection opto-mechanical computer-controlled integrated device for a multi-section MEMS probe the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
- the multi-parameter detection opto-mechanical control integrated device for the multi-section MEMS probe includes: a laser, a first pinhole, a prism, an imaging objective lens, a test piece, a second pinhole, an image sensor, an object stage and a translation stage ;
- the tested part is an upper probe, a middle probe or a lower probe
- the laser beam emitted by the laser passes through the first pinhole to form a point light source, and the light beam transmitted by the point light source passes through the prism and the imaging objective lens successively, then converges on the upper surface of the tested object, is reflected by the tested object, and then successively passes through the imaging objective lens.
- the prism and the imaging objective lens After being combined with the prism, it is reflected to the second pinhole, and the light beam transmitted from the second pinhole is received by the image sensor, and the image data is transmitted to the computer for processing;
- the laser, the first pinhole, the prism, the imaging objective lens, the second pinhole and the image sensor are carried by the translation stage and can move in the horizontal plane to scan the upper surface of the tested object;
- the object stage includes a fixed stage and a loading stage, the surface to be tested of the tested object is coated with light reflection, and the upper surface of the loading stage is coated with light absorption.
- a multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe wherein the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, and the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
- the multi-parameter detection opto-mechanical control integration method for the multi-section MEMS probe includes the following steps:
- Step a Open the upper reference table and loading table:
- Step b Adjust the stage:
- Step d Create an array:
- Step e image processing
- the gray value of each image obtained by the image sensor is accumulated to obtain the accumulated image, as follows:
- Step f Determine the type of the DUT:
- the DUT is the upper probe or the lower probe, if the gray vector f 1 ',f 2 ', ...,f n ' has a rectangular wave, the DUT is the middle probe;
- Step g the key parameters of extraction time:
- the DUT is the upper probe or the lower probe, extract the accumulated image f i ' corresponding to the falling edge of the left rectangular wave and its corresponding time t i and the accumulated image f j ' corresponding to the rising edge of the right rectangular wave and It corresponds to time t j , and records the time interval
- the DUT is a middle probe, extract the accumulated image f i ' corresponding to the rising edge of the rectangular wave and its corresponding time t i and the accumulated image f j ' and its corresponding time t j corresponding to the falling edge, and record the The time interval between two accumulated images
- Step h calculate the key parameters of size:
- the object distance of the imaging objective is l 1
- the image distance is l 2
- the moving speed v of the translation stage the key size parameter d is obtained as:
- the dimension key parameter d is the diameter of the middle probe or the inner ring diameter of the upper probe hole or the inner ring diameter of the lower probe hole.
- a multi-section MEMS probe key dimension measurement probe loading stage the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, and the bottom of the upper probe is provided with a hole, so the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
- the probe loading stage for measuring the critical dimension of the multi-section MEMS probe includes a fixed stage and a loading stage, and the fixed stage and the loading stage are connected by a rotating shaft;
- the fixed platform includes a lower bearing platform and an upper reference platform.
- One side of the lower bearing platform is wider than the upper reference platform.
- the upper reference platform is connected to the loading platform through a rotating shaft, and the upper reference platform is connected to the loading platform.
- the thickness is the same.
- the loading table is a frame-like structure, the side of the loading table is provided with an extrusion structure, and the other side opposite to the upper reference table is provided with a vertical adjustment bracket, and the end of the vertical adjustment bracket is provided with a lifting plate,
- the lifting plate can be adjusted up and down along the vertical adjustment bracket; the surface to be tested of the test piece and the upper surface of the loading table are located on the same level, and the other end face of the test piece is in contact with the lifting plate and is in contact with the viscous material coated on the surface of the lifting plate. paste;
- the surface to be tested of the test piece is reflectively coated, and the upper surface of the loading table is coated with light absorption.
- a probe loading method for critical dimension measurement of a multi-section MEMS probe the multi-section MEMS probe comprises an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, and the lower probe is provided with a hole.
- the top of the probe is provided with a hole, and the middle probe is inserted into the hole of the upper probe and the hole of the lower probe respectively, forming two sets of hole-shaft matching structures;
- the probe loading method for critical dimension measurement of a multi-section MEMS probe includes the following steps:
- Step a reflective coating on the surface to be measured of the test piece, and light absorption coating on the upper surface of the loading platform, where the test piece is an upper probe, a middle probe or a lower probe;
- Step b After the upper reference table and the loading table are folded, the object to be tested faces downward, and the edge is placed in the frame-like structure of the loading table;
- Step c adjusting the temperature of the test environment to normal temperature or the working environment temperature of the bare core, so that the upper probe or the lower probe completes thermal expansion and cold contraction or the middle probe completes thermal contraction and cold expansion;
- Step d adjust the extrusion structure, and fix the test piece in the frame-like structure of the loading table with the extrusion structure, so as to avoid the test piece from shaking when the lifting plate squeezes the test piece, resulting in inaccurate parameter test of the test piece;
- Step e Adjust the lift plate so that the lift plate is pressed on the test piece, the sticky material coated on the surface of the lift plate sticks to the test piece, and the lift plate is fixed;
- Step f adjusting the extrusion structure to separate the tested piece from the extrusion structure, so as to avoid the deformation of the tested piece when the extrusion structure squeezes the tested piece, resulting in inaccurate parameter testing of the tested piece;
- Step g Open the upper reference platform and the loading platform.
- the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform and the upper reference platform are located on the same horizontal plane.
- the present invention discloses a MEMS probe structure for chip testing in an ultra-high temperature working environment.
- the key structure is that the probe includes an upper probe installed on the upper guide plate, a middle probe passing through the middle guide plate, and a lower probe installed on the lower guide plate.
- the lower probe of the guide plate at the same time, the upper guide plate, the middle guide plate and the lower guide plate are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than 1/10 of the distance between the two adjacent probes;
- the upper probe and the lower The probe is between 100 degrees Celsius and 200 degrees Celsius, and has thermal expansion and cold contraction characteristics;
- the middle probe is between 100 degrees Celsius and 200 degrees Celsius, and has thermal contraction and cold expansion characteristics;
- the bottom of the upper probe is provided with holes, the said The top of the lower probe is provided with a hole, and the middle probe is inserted into the hole of the upper probe and the hole of the lower probe respectively, forming two sets of hole-shaft matching structures.
- the middle probe and the upper probe and the lower probe There is a transition fit between the needles; when the temperature changes from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe, the upper probe and the lower probe changes from a transition fit to a clearance fit; the above structure, thermal expansion and contraction characteristics and hole-shaft fit relationship Under the indispensable conditions, the test work of the chip under the working environment of most ordinary temperature can be realized, and the test work of the chip under the working environment of ultra-high temperature can be realized.
- the present invention is a MEMS probe structure for chip testing in an ultra-high temperature working environment. Since the temperature is below 100 degrees Celsius, the middle probe is a transition fit between the upper probe and the lower probe; at 100 degrees Celsius to 200 degrees Celsius When changing, the transition fit between the middle probe and the upper probe and the lower probe changes from a transition fit to a clearance fit; this special structure can automatically adjust the length of the probe in the ultra-high temperature working environment, naturally realizing all the parts on the bare core.
- the pads or contacts to be inspected all have probe contacts.
- the most significant feature is that the probe part does not need to be kept at a low temperature, that is, the cooling system that must be sub-micron is saved, and the probe is reduced. Card production cost and production difficulty.
- the present invention also provides a chip testing method in a wide temperature range working environment for the MEMS probe structure for chip testing in an ultra-high temperature working environment.
- the present invention also provides a multi-parameter detection optical-mechanical-computer-control integration device and method for a multi-section MEMS probe.
- the device includes a laser, a first pinhole, a prism, an imaging objective, a DUT, a second pinhole, an image sensor, a stage and a translation stage; the laser, the first pinhole, the prism, the imaging objective, the second pinhole and The image sensor is carried by the translation stage, which can move in the horizontal plane to scan the upper surface of the test piece; the stage includes a fixed stage and a loading stage, the test surface of the test piece is reflective coating, and the upper surface of the loading stage is light-absorbing coating , to clearly distinguish whether the DUT has been scanned; this method first opens the upper reference stage and the loading stage, then adjusts the stage, scans the DUT, then establishes an array, performs image processing, determines the type of the DUT, and finally extracts Time key parameter, calculation size key parameter; under the multi-parameter detection opto-mechanical-computer-control integration device and method for multi-section MEMS probes of the present invention, only the translation stage is required to simultaneously carry the laser, the first pinhole, the
- the present invention provides a multi-parameter detection opto-mechanical-computer-control integration device and method for multi-section MEMS probes
- the device and method adopt the principle of optical microscopy, however, the key premise of this technology is to be
- the measuring surface must be confocal with the second pinhole.
- the small deformation may cause inaccurate detection, so the multi-section MEMS probe structure cannot be directly clamped by the fixture.
- the requirement of precise placement without direct clamping brings considerable difficulties to the placement of the multi-section MEMS probe structure. Therefore, the present invention also provides a multi-section MEMS probe key dimension measurement probe.
- a needle loading stage and a probe loading method for critical dimension measurement of a multi-section MEMS probe the probe loading stage includes a fixed stage and a loading stage, and the fixed stage and the loading stage are connected by a rotating shaft;
- the fixed stage includes The lower loading platform and the upper reference platform;
- the side of the loading platform is provided with an extrusion structure, and the other side connected to the upper reference platform is provided with a vertical adjustment bracket, and the end of the vertical adjustment bracket is provided with a lifting plate;
- the surface to be tested and the upper surface of the loading table are on the same level, and the other end face of the test piece is in contact with the lift plate;
- this method first coats the test piece with reflective coating, absorbs light on the loading table, and then folds the upper reference table and the loading table,
- the part to be tested faces downward, and the edge is placed in the frame-like structure of the loading table, and then the temperature is adjusted, the extrusion structure is adjusted, the test piece is fixed in the frame-like structure of the loading table with the ex
- the test surface of the probe is guaranteed by the upper reference table Confocal with the second pinhole; the multi-section MEMS probe structure is fixed from the upper and lower directions through the upper reference stage and the lifting plate, and the multi-section MEMS probe structure is pasted by the adhesive material coated on the surface of the lifting plate, and the sticking position is not In this way, the extrusion structure can be released, so that the multi-section MEMS probe structure is not clamped during the test process, which effectively avoids the problem of inaccurate measurement caused by elastic deformation caused by the multi-section MEMS probe structure being clamped.
- FIG. 1 is a schematic structural diagram of a MEMS probe for chip testing in an ultra-high temperature working environment according to the present invention.
- FIG. 2 is a flow chart of a chip testing method under a conventional temperature working environment in the chip testing method under a wide temperature range working environment of the present invention.
- FIG. 3 is a flow chart of the chip testing method under the ultra-high temperature working environment in the chip testing method under the wide temperature range working environment of the present invention.
- FIG. 4 is a schematic structural diagram of a multi-parameter detection opto-mechanical-control integrated device for a multi-section MEMS probe according to the present invention.
- FIG. 5 is a flow chart of an integrated opto-mechanical control method for multi-parameter detection of a multi-section MEMS probe according to the present invention.
- FIG. 6 is a schematic diagram of the measurement principle when the object to be tested is an upper probe or a lower probe in the multi-parameter detection opto-mechanical control integration method for multi-section MEMS probes of the present invention.
- FIG. 7 is a schematic diagram of the measurement principle when the object under test is the middle probe in the multi-parameter detection opto-mechanical-control integration method for the multi-section MEMS probe of the present invention.
- FIG. 8 is a schematic structural diagram of the probe loading stage for measuring the critical dimension of the multi-section MEMS probe according to the present invention after the upper reference stage and the loading stage are folded.
- FIG. 9 is a schematic structural diagram of the probe loading stage for measuring the critical dimension of the multi-section MEMS probe according to the present invention after the upper reference stage and the loading stage are opened.
- FIG. 10 is a flow chart of a probe loading method for critical dimension measurement of a multi-section MEMS probe according to the present invention.
- 1 composite probe head structure 1-1 upper guide plate, 1-2 middle guide plate, 1-3 lower guide plate, 1-4 probe, 1-4-1 upper probe, 1-4-2 middle probe needle, 1-4-3 lower probe, 2 adapter board, 3PCB board, 4-1 laser, 4-2 first pinhole, 4-3 prism, 4-4 imaging objective lens, 4-5 DUT, 4-6 second pinhole, 4-7 image sensor, 4-8 stage, 4-8-1 fixed stage, 4-8-1-1 lower stage, 4-8-1-2 upper reference stage , 4-8-2 loading platform, 4-8-3 shaft, 4-8-4 extrusion structure, 4-8-5 vertical adjustment bracket, 4-8-6 lifting plate, 4-9 translation platform.
- the following is a specific embodiment of the MEMS probe structure for chip testing in an ultra-high temperature working environment of the present invention.
- FIG. 1 A schematic diagram of the MEMS probe structure for chip testing in an ultra-high temperature working environment in this embodiment is shown in FIG. 1 .
- the MEMS probe structure is provided with a PCB board 3 , an adapter board 2 and a composite probe in sequence from top to bottom.
- Head structure 1 the composite probe head structure 1 includes an upper guide plate 1-1, a middle guide plate 1-2 and a lower guide plate 1-3, the probes 1-4 start from the adapter plate 2 and pass through the upper guide plate 1-1 After connecting with the middle guide plate 1-2, it extends from the lower guide plate 1-3; wherein, the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are made of insulating materials, and the probes 1-4 are made of metal conductive material;
- the probes 1-4 include an upper probe 1-4-1 installed on the upper guide plate 1-1, a middle probe 1-4-2 passing through the middle guide plate 1-2 and a lower part installed on the lower guide plate 1-3 Probe 1-4-3;
- the middle guide plate 1-2 is provided with a through groove, and the middle probe 1-4-2 passes through the middle guide plate 1-2 from the through groove, and the middle guide plate 1-2 can be perpendicular to the plane of the probe 1-4. Internal movement to ensure that probes 1-4 can bend in the same direction without short-circuiting;
- the thermal expansion characteristics of each part are that the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than the distance between two adjacent probes. 1/10;
- the upper probe 1-4-1 and the lower probe 1-4-3 are between 100 degrees Celsius and 200 degrees Celsius, with thermal expansion and cold contraction characteristics;
- the middle probe 1-4-2 is between 100 degrees Celsius and 200 degrees Celsius Between degrees Celsius, it has the characteristics of thermal contraction and cold expansion;
- the bottom of the upper probe 1-4-1 is provided with a hole
- the top of the lower probe 1-4-3 is provided with a hole
- the middle probe 1-4-2 is respectively inserted into the upper probe 1-4-1
- Two sets of hole and shaft matching structures are formed in the hole of the lower probe 1-4-3.
- the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1 -4-3 is a transition fit; when changing from 100 degrees Celsius to 200 degrees Celsius, there is a transition fit between the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1-4-3 Convert to clearance fit.
- the following is a specific embodiment of the MEMS probe structure for chip testing in an ultra-high temperature working environment of the present invention.
- the middle probe 1-4-2 is made of at least one of antimony, bismuth or gallium. Made of metal alloy material. Since antimony, bismuth, and gallium are all substances that expand and contract with heat, they are often used to make alloys to reduce the influence of temperature on precision instruments. Therefore, using them to make the middle probe 1-4-2 can not only meet the electrical conductivity, but also can Realize thermal shrinkage and cold expansion characteristics.
- the nickel sulfide used to make the tempered glass self-explode is also a substance that expands and contracts with heat, and can also be used to make the middle probe 1-4-2.
- the following is a specific embodiment of the chip testing method under a wide temperature range working environment of the present invention.
- the chip testing method in the wide temperature range working environment in this embodiment is implemented on the MEMS probe structure for chip testing in the ultra-high temperature working environment described in the specific embodiment 1 or the specific embodiment 2.
- the wide temperature range working environment The chip testing method includes a chip testing method under a conventional temperature working environment and a chip testing method under an ultra-high temperature working environment. Among them, the flow chart of the chip testing method under the conventional temperature working environment is shown in Figure 2, and the chip testing method flow under the ultra-high temperature working environment is shown in Figure 2. Figure as shown in Figure 3;
- the normal temperature working environment refers to the temperature range where the working temperature is between 50 degrees Celsius and 150 degrees Celsius, and the probes 1-4 can be elastically deformed.
- the test method steps are as follows:
- Step a Adjust the middle guide plate 1-2 so that the middle guide plate 1-2 is pressed to the side of the middle probe 1-4-2, so that the probe 1-4 is bent to one side under the action of the middle guide plate 1-2 ;
- Step b contact the probes 1-4 to the pads or contacts of the bare die;
- Step c Forcefully squeeze the probes 1-4 and the bare core, so that when all the probes 1-4 have different degrees of bending, all the pads or contacts to be detected on the bare core have the probes 1-4 touch;
- Step d write a test program to the bare core to complete the test
- the ultra-high temperature working environment refers to the temperature range in which the working temperature is above 150 degrees Celsius, and the probes 1-4 no longer elastically deform.
- the test method steps are as follows:
- Step a Adjust the middle guide plate 1-2 so that the probes 1-4 do not bend
- Step b contact the probes 1-4 to the pads or contacts of the bare die;
- Step c Adjust the ambient temperature to the ultra-high temperature working ambient temperature, so that the transition fit between the middle probe 1-4-2, the upper probe 1-4-1 and the lower probe 1-4-3 is changed to a clearance fit ;
- Step d squeeze the probes 1-4 and the bare core with force, so that all the probes 1-4 are in contact with the probes 1-4 on all the pads or contacts to be detected on the bare core without being bent;
- Step e write a test program to the bare core to complete the test.
- the following is a specific embodiment of the multi-parameter detection opto-mechanical-computer-control integrated device for a multi-section MEMS probe of the present invention.
- the multi-section MEMS probe in this embodiment uses a multi-parameter detection opto-mechanical-computer-control integrated device, in conjunction with the MEMS probe structure for chip testing in an ultra-high temperature working environment described in the specific embodiment 1 or the specific embodiment 2, and the specific The chip testing method in the wide temperature range working environment described in the third embodiment is used; the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4- 3.
- the bottom of the upper probe 1-4-1 is provided with a hole
- the top of the lower probe 1-4-3 is provided with a hole
- the middle probe 1-4-2 is inserted into the upper probe 1-4 respectively
- two sets of hole-shaft matching structures are formed, as shown in Figure 1;
- the multi-parameter detection opto-mechanical control integrated device for the multi-section MEMS probe includes: a laser 4-1 , the first pinhole 4-2, the prism 4-3, the imaging objective lens 4-4, the DUT 4-5, the second pinhole 4-6, the image sensor 4-7, the stage 4-8 and the translation stage 4-9;
- the tested piece 4-5 is the upper probe 1-4-1, the middle probe 1-4-2 or the lower probe 1-4-3;
- the laser beam emitted by the laser 4-1 passes through the first pinhole 4-2 to form a point light source, and the light beam transmitted by the point light source passes through the prism 4-3 and the imaging objective lens 4-4 successively, and then converges to the measured object 4-4. 5.
- the upper surface is reflected by the DUT 4-5, and then passes through the imaging objective lens 4-4 and the prism 4-3 successively, and then is reflected to the second pinhole 4-6, and the light beam transmitted from the second pinhole 4-6, Received by the image sensor 4-7, and transmits the image data to the computer for processing;
- the laser 4-1, the first pinhole 4-2, the prism 4-3, the imaging objective lens 4-4, the second pinhole 4-6 and the image sensor 4-7 are carried by the translation stage 4-9 and can Internal movement to scan the upper surface of the DUT 4-5;
- the object stage 4-8 includes a fixed stage 4-8-1 and a loading stage 4-8-2, the surface to be measured of the tested object 4-5 is reflectively coated, and the upper surface of the loading stage 4-8-2 is Absorbing coating.
- the following is a specific embodiment of the multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe of the present invention.
- the opto-mechanical-computer-control integration method for multi-parameter detection for multi-section MEMS probes in this embodiment is implemented on the opto-mechanical-computer-control integration device for multi-parameter detection for multi-section MEMS probes described in the fourth specific embodiment.
- the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1- 4-3, the bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, the middle probe 1-4-2 is respectively inserted into the upper probe 1 In the hole of -4-1 and the hole of the lower probe 1-4-3, two sets of hole-shaft matching structures are formed, as shown in Figure 1;
- the multi-parameter detection opto-mechanical control integration method for the multi-section MEMS probe the flow chart is shown in Figure 5
- the multi-section MEMS probe multi-parameter detection opto-mechanical control integration method includes the following steps:
- Step a Open the upper reference table 4-8-1-2 and the loading table 4-8-2:
- Step d Create an array:
- Step e image processing
- the gray value of each image obtained by the image sensor is accumulated to obtain the accumulated image, as follows:
- Step f Determine the type of DUT 4-5:
- the DUT 4-5 is the middle probe 1-4-2;
- Step g the key parameters of extraction time:
- the DUT 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, extract the accumulated image f i ' corresponding to the falling edge of the left rectangular wave and its corresponding time t i and the right
- of the two accumulated images is recorded;
- the DUT 4-5 is the middle probe 1-4-2, extract the accumulated image f i ' corresponding to the rising edge of the rectangular wave and its corresponding time t i and the accumulated image f j ' corresponding to the falling edge and its corresponding time t j , and record the time interval
- Step h calculate the key parameters of size:
- the key size parameter d is obtained as:
- the dimension key parameter d is the diameter of the middle probe 1-4-2 or the inner ring diameter of the upper probe 1-4-1 hole or the inner ring diameter of the lower probe 1-4-3 hole.
- the DUT 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, the schematic diagram of the measurement principle is shown in Figure 6; if the DUT 4-5 is the middle probe 1- 4-2, the schematic diagram of the measurement principle is shown in Figure 7;
- the following is the specific embodiment of the probe loading stage for the critical dimension measurement of the multi-section MEMS probe of the present invention.
- the probe loading stage for measuring the critical dimensions of multi-section MEMS probes in this embodiment is combined with the multi-parameter detection opto-mechanical-computer-control integration device for multi-section MEMS probes described in the fourth embodiment and the fifth embodiment.
- the multi-section MEMS probe is used in the multi-parameter detection optical-mechanical-computer-control integration method; in the multi-section MEMS probe critical dimension measurement probe loading stage, the multi-section MEMS probe includes an upper probe 1-4-1, the middle probe 1-4-2 and the lower probe 1-4-3, the bottom of the upper probe 1-4-1 is provided with a hole, the lower probe 1-4-3 There is a hole at the top of the probe, and the middle probe 1-4-2 is inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3 respectively, forming two sets of hole-shaft matching structures, as shown in Figure 1 shown;
- the probe loading stage for measuring the critical dimension of the multi-section MEMS probe is shown in Fig. 8 and Fig. 9 .
- the probe loading stage for measuring the critical dimension of the multi-section MEMS probe includes a fixed table 4- 8-1 and the loading platform 4-8-2, the fixed platform 4-8-1 and the loading platform 4-8-2 are connected by the rotating shaft 4-8-3;
- the fixing platform 4-8-1 includes a lower bearing platform 4-8-1-1 and an upper reference platform 4-8-1-2.
- One side of the lower bearing platform 4-8-1-1 is wider than the upper one.
- the reference table 4-8-1-2, on the side, the upper reference table 4-8-1-2 is connected with the loading table 4-8-2 through the rotating shaft 4-8-3, the upper reference table 4-8 -1-2 is the same thickness as the loading table 4-8-2, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the upper surface of the loading table 4-8-2 and the upper reference
- the table 4-8-1-2 overlaps, as shown in Figure 8, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are opened, the lower surface of the loading table 4-8-2 is replaced by the lower
- the loading platform 4-8-1-1 is supported, and the upper surface of the loading platform 4-8-2 and the upper reference platform 4-8-1-2 are located on the same horizontal plane.
- the horizontal plane is the image sensor 4- 7's image plane;
- the loading table 4-8-2 is a frame-like structure, and the side of the loading table 4-8-2 is provided with an extrusion structure 4-8-4, which is opposite to the other side connected to the upper reference table 4-8-1-2 , is provided with a vertical adjustment bracket 4-8-5, the end of the vertical adjustment bracket 4-8-5 is provided with a lift plate 4-8-6, the lift plate 4-8-6 can be vertically adjusted Adjust the bracket 4-8-5 to adjust up and down; the surface to be tested of the DUT 4-5 and the upper surface of the loading table 4-8-2 are on the same level, and the other end face of the DUT 4-5 is in contact with the lift plate 4-8 -6, and paste it with the sticky material coated on the surface of the lift plate 4-8-6;
- the surface to be tested 4-5 is coated with a reflective coating, and the upper surface of the loading platform 4-8-2 is coated with light absorption.
- the following is a specific embodiment of the probe loading method for critical dimension measurement of a multi-section MEMS probe of the present invention.
- the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4-3, the upper probe The bottom of the probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, and the middle probe 1-4-2 is inserted into the hole and the upper probe 1-4-1 respectively.
- the holes of the lower probe 1-4-3 two sets of hole-shaft matching structures are formed, as shown in Figure 1;
- the flow chart of the probe loading method for critical dimension measurement of multi-section MEMS probes is shown in FIG. 10 , and the probe loading method for critical dimension measurement of multi-section MEMS probes includes the following steps:
- Step a Reflective coating on the surface to be measured of the DUT 4-5, and absorbing coating on the upper surface of the loading table 4-8-2.
- the DUT 4-5 is the upper probe 1-4-1, the middle Probe 1-4-2 or lower probe 1-4-3;
- Step b After the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the object to be tested 4-5 faces downward, and the edge is placed on the loading table 4-8-2 frame. in structure;
- Step c Adjust the test environment temperature to normal temperature or the bare core working environment temperature, so that the upper probe 1-4-1 or the lower probe 1-4-3 can be thermally expanded and contracted or the middle probe 1-4-2 can be completed heat shrink and cold rise;
- Step d adjust the extrusion structure 4-8-4, and fix the test piece 4-5 in the frame structure of the loading table 4-8-2 with the extrusion structure 4-8-4, so as to avoid the lifting plate 4-8- 6
- the DUT 4-5 is squeezed, the DUT 4-5 is shaken, resulting in inaccurate parameter testing of the DUT 4-5;
- Step e Adjust the lifting plate 4-8-6 so that the lifting plate 4-8-6 is pressed on the DUT 4-5, and the adhesive material coated on the surface of the lifting plate 4-8-6 sticks to the DUT 4. -5, and fix the lifting plate 4-8-6;
- Step f adjust the extrusion structure 4-8-4, separate the tested part 4-5 from the extrusion structure 4-8-4, and avoid the extrusion structure 4-8-4 from pressing the tested part 4-5.
- DUT 4-5 is deformed, resulting in inaccurate parameter test of DUT 4-5;
- Step g open the upper reference platform 4-8-1-2 and the loading platform 4-8-2, at this time, the lower surface of the loading platform 4-8-2 is supported by the lower bearing platform 4-8-1-1, The upper surface of the loading table 4-8-2 and the upper reference table 4-8-1-2 are located on the same level.
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Abstract
A multi-parameter detection opto-mechatronics calculation and control integration apparatus for a multi-section MEMS probe, belonging to the technical fields of precision testing and metering, micro-electro-mechanical systems, IC chip testing and probe cards. The apparatus comprises a laser device, a first pinhole, a prism, an imaging objective lens, a piece under test, a second pinhole, an image sensor, an objective table and a translation stage, wherein the laser device, the first pinhole, the prism, the imaging objective lens, the second pinhole and the image sensor are borne by the translation stage, and can move in a horizontal plane to scan the upper surface of the piece under test; the objective table comprises a fixed table and a loading table; a surface under test of the piece under test is coated with a reflective film; and the upper surface of the loading table is coated with a light absorption film. As a key technology in MEMS probe structures and testing methods for chip testing in an ultrahigh-temperature working environment, the present invention is conducive to ensuring effective contact between a bare chip and a probe in the ultrahigh-temperature working environment during a test process of a large-size or multi-test-point chip, and then facilitates testing of the chip.
Description
本发明多节MEMS探针用多参数检测光机电算控一体化装置属于精密测试计量、微机电系统、IC芯片测试及探针卡技术领域。The invention relates to a multi-parameter detection opto-mechanical-computer-control integrated device for a multi-section MEMS probe, belonging to the technical fields of precision measurement and measurement, micro-electro-mechanical systems, IC chip testing and probe cards.
探针卡是一种用于对裸芯进行测试的设备。通过将探针接触到裸芯的焊盘或触点形成电连接,并通过向芯片写入测试程序,从而测试芯片的性能。A probe card is a device used to test bare dies. The performance of the chip is tested by contacting the probes to the pads or contacts of the bare die to form electrical connections, and by writing a test program to the chip.
实现测试的一项关键技术是要求探针必须全部接触到裸芯的焊盘或触点上,这就对所有探针端部是否在同一平面提出了非常高的要求。在本申请中,探针端部在同一平面内的程度定义为探针平面度。对于小尺寸且探针数量不多的探针卡,探针平面度比较容易把控,而对于大尺寸或探针数量较多的探针卡,探针平面度就难以把控,如果探针平面度低,就会出现部分探针有效接触到裸芯,而其他探针则接触不到裸芯的问题,造成整体接触不良,芯片测试失败。A key technique to realize the test is that the probes must all be in contact with the pads or contacts of the bare die, which puts forward very high requirements on whether all probe ends are on the same plane. In this application, the extent to which the probe tips are in the same plane is defined as probe flatness. For a probe card with a small size and a small number of probes, the probe flatness is relatively easy to control, while for a probe card with a large size or a large number of probes, the probe flatness is difficult to control. If the flatness is low, some probes can effectively contact the die, while other probes cannot contact the die, resulting in poor overall contact and chip test failure.
为了解决上述问题,我们可以增加裸芯与探针卡之间的压力,让已经有效接触到裸芯的探针弯曲,从而使得接触不到裸芯的探针有效接触。然而,这又会产生新的技术问题,对于MEMS探针卡,探针与探针之间的距离非常接近,在探针发生弯曲的情况下,就非常容易出现弯曲探针接触到其他探针的情况,形成探针短路,进而造成测试失败,严重时甚至损坏测试芯片和探针卡。In order to solve the above problems, we can increase the pressure between the die and the probe card, so that the probes that have effectively contacted the die are bent, so that the probes that cannot contact the die can be effectively contacted. However, this will create new technical problems. For the MEMS probe card, the distance between the probe and the probe is very close. When the probe is bent, it is very easy for the bent probe to contact other probes. In this case, a short circuit of the probe will be formed, which will cause the test to fail, and even damage the test chip and the probe card in severe cases.
针对探针弯曲而容易出现短路的问题,我们可以借鉴申请号201711115635.6的发明专利《垂直式探针卡之探针装置》所公开的结构,在该申请中,探针装置包括了一种导板组合结构,通过中间导板的限制,使得所有探针只能向同一方向弯曲,从而有效避免了探针之间的短路问题。For the problem that the probe is prone to short circuit due to bending, we can refer to the structure disclosed in the invention patent "Probe Device of Vertical Probe Card" with application number 201711115635.6. In this application, the probe device includes a guide plate combination Structure, through the restriction of the middle guide plate, all the probes can only be bent in the same direction, thus effectively avoiding the problem of short circuit between the probes.
这种带有导板组合结构的探针卡可以实现大部分工况下的裸芯测试工作,然而,还有部分裸芯测试工作无法完成,原因如下:为了使测试真实有效,我们需要确保裸芯测试环境与芯片工作环境相一致,不同芯片具有不同的工作温度,有些芯片在100摄氏度左右的高温环境下工作,而有些芯片在200摄氏度的超高温环境下工作。对于那些超高温环境下工作的芯片,我们同样需要在相同温度环境下完成测试,由于受到探针材料的限制,在如此超高温环境下,探针将失去弹性,如果坚持用中间导板等结构或方法去弯曲探针,则会造成探针塑性变形无法回弹,不仅无法完成裸芯的测试工作,而且严重时会损坏探针卡。This kind of probe card with the combination structure of the guide plate can realize the bare core test work under most working conditions. However, there are still some bare core test work that cannot be completed. The reasons are as follows: In order to make the test real and effective, we need to ensure the bare core test work. The test environment is consistent with the working environment of the chip. Different chips have different operating temperatures. Some chips work in a high temperature environment of about 100 degrees Celsius, while some chips work in an ultra-high temperature environment of 200 degrees Celsius. For those chips that work in an ultra-high temperature environment, we also need to complete the test in the same temperature environment. Due to the limitation of the probe material, in such an ultra-high temperature environment, the probe will lose its elasticity. If you insist on using a structure such as an intermediate guide plate or If the probe is bent by the method, the plastic deformation of the probe cannot be rebounded, which not only fails to complete the test work of the bare core, but also damages the probe card in severe cases.
可见,借鉴发明专利《垂直式探针卡之探针装置》所提供的解决方案,虽然能够适用于大多数裸芯的测试工作,然而对于超高温工作环境下的芯片,仍然无法确保大尺寸或多测试点芯片测试过程中,裸芯与探针之间有效接触。It can be seen that, although the solution provided by the invention patent "Probe Device for Vertical Probe Card" can be applied to most bare-chip testing work, it still cannot ensure large-size or Effective contact between the die and the probes during multi-point chip testing.
发明内容SUMMARY OF THE INVENTION
为了解决上述问题,本发明公开了一种多节MEMS探针用多参数检测光机电算控一体化装置,作为面向超高温工作环境下芯片测试的MEMS探针结构及测试方法中的一项关键技术,有利于确保超高温工作环境下,大尺寸或多测试点芯片测试过程中,裸芯与探针之间有效接触,进而有利于对该芯片进行测试。In order to solve the above problems, the present invention discloses a multi-parameter detection opto-mechanical-computer-control integration device for a multi-section MEMS probe, which is a key point in the MEMS probe structure and test method for chip testing in an ultra-high temperature working environment The technology helps to ensure that in the ultra-high temperature working environment, during the testing of large-sized or multi-test point chips, the bare die and the probes are effectively contacted, thereby facilitating the testing of the chip.
本发明的目的是这样实现的:The object of the present invention is achieved in this way:
一种面向超高温工作环境下芯片测试的MEMS探针结构,从上到下依次设置PCB板、转接板和复合探针头结构,所述复合探针头结构包括上导板,中间导板和下导板,探针从转接板开始,穿过上导板和中间导板后,从下导板伸出;其中,上导板,中间导板和下导板由绝缘材料制成,探针由金属导电材料制成;A MEMS probe structure for chip testing in an ultra-high temperature working environment, a PCB board, an adapter board and a composite probe head structure are arranged in sequence from top to bottom, and the composite probe head structure includes an upper guide plate, a middle guide plate and a lower The guide plate, the probe starts from the adapter plate, passes through the upper guide plate and the middle guide plate, and protrudes from the lower guide plate; wherein, the upper guide plate, the middle guide plate and the lower guide plate are made of insulating material, and the probe is made of metal conductive material;
所述探针包括安装在上导板的上部探针,穿过中间导板的中部探针和安装在下导板的下部探针;The probes include an upper probe installed on the upper guide plate, a middle probe through the middle guide plate and a lower probe installed on the lower guide plate;
所述中间导板上设置有通槽,中部探针从通槽内穿过中间导板,所述中间导板能够在垂直探针的平面内运动,确保探针能够向同一方向弯曲且不短路;The middle guide plate is provided with a through groove, the middle probe passes through the middle guide plate from the through groove, and the middle guide plate can move in a plane perpendicular to the probe to ensure that the probe can be bent in the same direction without short-circuiting;
各零部件受热膨胀特性为,上导板,中间导板和下导板在100摄氏度到200摄氏度之间,体积随温度的变化小于相邻两个探针之间距离的1/10;上部探针和下部探针在100摄氏度到200摄氏度之间,具有热胀冷缩特性;中部探针在100摄氏度到200摄氏度之间,具有热缩冷胀特性;The thermal expansion characteristics of each part are: the upper guide plate, the middle guide plate and the lower guide plate are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than 1/10 of the distance between the two adjacent probes; the upper probe and the lower The probe is between 100 degrees Celsius and 200 degrees Celsius, and has the characteristics of thermal expansion and cold contraction; the middle probe is between 100 degrees Celsius and 200 degrees Celsius, and has the characteristics of thermal expansion and cold expansion;
所述上部探针的底部设置有孔,所述下部探针的顶部设置有孔,中部探针分别插入上部探针的孔和下部探针的孔中,形成两套孔轴配合结构,在100摄氏度以下,中部探针与上部探针和下部探针之间为过渡配合;在100摄氏度向200摄氏度变化时,中部探针与上部探针和下部探针之间由过渡配合转为间隙配合。The bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures. Below degrees Celsius, the transition fit between the middle probe, the upper probe and the lower probe is a transition fit; when the temperature changes from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe, the upper probe and the lower probe changes from a transition fit to a clearance fit.
上述面向超高温工作环境下芯片测试的MEMS探针结构,所述中部探针由至少含有锑,铋或镓一种金属的合金材料制作而成。In the above-mentioned MEMS probe structure for chip testing in an ultra-high temperature working environment, the middle probe is made of an alloy material containing at least one metal of antimony, bismuth or gallium.
一种宽温度范围工作环境下芯片测试方法,包括常规温度工作环境下芯片测试方法和超高温工作环境下芯片测试方法;A chip testing method under a wide temperature range working environment, including a chip testing method under a conventional temperature working environment and a chip testing method under an ultra-high temperature working environment;
所述常规温度工作环境是指工作温度在50摄氏度到150摄氏度之间,探针扔能够发生弹性形变的温度范围,该测试方法步骤如下:The normal temperature working environment refers to the temperature range in which the working temperature is between 50 degrees Celsius and 150 degrees Celsius, and the probe can be elastically deformed. The steps of the test method are as follows:
步骤a、调整中间导板,使中间导板挤压到中部探针侧部,使探针在中间导板的作用下,向一侧弯曲;Step a. Adjust the middle guide plate so that the middle guide plate is pressed to the side of the middle probe, so that the probe is bent to one side under the action of the middle guide plate;
步骤b、将探针接触到裸芯的焊盘或触点上;Step b, contact the probe to the pad or contact of the bare die;
步骤c、用力挤压探针与裸芯,使得在所有探针具有不同弯曲程度的情况下,裸芯上所有待检测的焊盘或触点均有探针接触;Step c, squeezing the probes and the bare core with force, so that all the pads or contacts to be detected on the bare core are in contact with the probes under the condition that all the probes have different degrees of bending;
步骤d、向裸芯写入测试程序,完成测试;Step d, write a test program to the bare core to complete the test;
所述超高温工作环境是指工作温度在150摄氏度以上,探针不再发生弹性形变的温度范围,该测试方法步骤如下:The ultra-high temperature working environment refers to the temperature range in which the working temperature is above 150 degrees Celsius, and the probe no longer undergoes elastic deformation. The test method steps are as follows:
步骤a、调整中间导板,使探针不发生弯曲;Step a. Adjust the middle guide plate so that the probe does not bend;
步骤b、将探针接触到裸芯的焊盘或触点上;Step b, contact the probe to the pad or contact of the bare die;
步骤c、将环境温度调整到超高温工作环境温度,使中部探针与上部探针和下部探针之间由过渡配合转为间隙配合;Step c, adjusting the ambient temperature to the ultra-high temperature working ambient temperature, so that the transition fit between the middle probe and the upper probe and the lower probe is changed to a clearance fit;
步骤d、用力挤压探针与裸芯,使得所有探针在不弯曲的情况下,裸芯上所有待检测的焊盘或触点均有探针接触;Step d, squeeze the probe and the bare core with force, so that all the pads or contacts to be detected on the bare core are in contact with the probe without bending all the probes;
步骤e、向裸芯写入测试程序,完成测试。Step e, write a test program to the bare core to complete the test.
多节MEMS探针用多参数检测光机电算控一体化装置,所述多节MEMS探针包括上部探针,中部探针和下部探针,所述上部探针的底部设置有孔,所述下部探针的顶部设置有孔,中部探针分别插入上部探针的孔和下部探针的孔中,形成两套孔轴配合结构;A multi-parameter detection opto-mechanical computer-controlled integrated device for a multi-section MEMS probe, the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
所述多节MEMS探针用多参数检测光机电控一体化装置包括:激光器、第一针孔、棱镜、成像物镜、被测件、第二针孔、图像传感器、载物台和平移台;The multi-parameter detection opto-mechanical control integrated device for the multi-section MEMS probe includes: a laser, a first pinhole, a prism, an imaging objective lens, a test piece, a second pinhole, an image sensor, an object stage and a translation stage ;
所述被测件为上部探针,中部探针或下部探针;The tested part is an upper probe, a middle probe or a lower probe;
所述激光器发出的激光束经过第一针孔形成点光源,所述点光源透射的光束先后经过棱镜和成像物镜后,汇聚到被测件上表面,经过被测件反射,再先后经过成像物镜和棱镜后,反射到第二针孔,从第二针孔透射的光束,由图像传感器接收,并将图像数据传递给计算机处理;The laser beam emitted by the laser passes through the first pinhole to form a point light source, and the light beam transmitted by the point light source passes through the prism and the imaging objective lens successively, then converges on the upper surface of the tested object, is reflected by the tested object, and then successively passes through the imaging objective lens. After being combined with the prism, it is reflected to the second pinhole, and the light beam transmitted from the second pinhole is received by the image sensor, and the image data is transmitted to the computer for processing;
所述激光器、第一针孔、棱镜、成像物镜、第二针孔和图像传感器由平移台承载,能够在水平面内移动,实现对被测件上表面的扫描;The laser, the first pinhole, the prism, the imaging objective lens, the second pinhole and the image sensor are carried by the translation stage and can move in the horizontal plane to scan the upper surface of the tested object;
所述载物台包括固定台和装载台,所述被测件的待测面反光镀膜,装载台的上表面吸光镀膜。The object stage includes a fixed stage and a loading stage, the surface to be tested of the tested object is coated with light reflection, and the upper surface of the loading stage is coated with light absorption.
多节MEMS探针用多参数检测光机电算控一体化方法,所述多节MEMS探针包括上部探针,中部探针和下部探针,所述上部探针的底部设置有孔,所述下部探针的顶部设置有孔,中部探针分别插入上部探针的孔和下部探针的孔中,形成两套孔轴配合结构;A multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe, wherein the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, and the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
所述多节MEMS探针用多参数检测光机电控一体化方法包括以下步骤:The multi-parameter detection opto-mechanical control integration method for the multi-section MEMS probe includes the following steps:
步骤a、打开上部参考台与装载台:Step a. Open the upper reference table and loading table:
将上部参考台与装载台打开,此时,装载台的下表面由下部承载台依托,装载台的上表面与上部参考台位于同一水平面;Open the upper reference platform and the loading platform. At this time, the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform and the upper reference platform are on the same level;
步骤b、调整载物台:Step b. Adjust the stage:
使被测件中心位于激光束的扫描线上;Make the center of the test piece on the scanning line of the laser beam;
步骤c、扫描被测件:Step c. Scan the DUT:
点亮激光器,匀速移动平移台,图像传感器获得一系列不同灰度的光斑图像f
1(x,y),f
2(x,y),...,f
n(x,y),其中,(x,y)表示像素坐标;
Turn on the laser, move the translation stage at a constant speed, and the image sensor obtains a series of spot images f 1 (x,y),f 2 (x,y),...,f n (x,y) with different grayscales, where, (x,y) represents pixel coordinates;
步骤d、建立数组:Step d. Create an array:
将每一幅光斑图像和获得所述光斑图像的时间组合成数组,如下:Combine each spot image and the time at which the spot image was obtained into an array, as follows:
[f
1(x,y),t
1],[f
2(x,y),t
2],...,[f
n(x,y),t
n]
[f 1 (x,y),t 1 ],[f 2 (x,y),t 2 ],...,[f n (x,y),t n ]
步骤e、图像处理:Step e, image processing:
将图像传感器获得的每一幅图像进行灰度值累加,得到累加图像,如下:The gray value of each image obtained by the image sensor is accumulated to obtain the accumulated image, as follows:
并按照时间先后顺序排列,得到一组灰度矩阵,如下:And arrange them in chronological order to obtain a set of grayscale matrices, as follows:
步骤f、判断被测件的类型:Step f. Determine the type of the DUT:
如果灰度向量f
1',f
2',...,f
n'具有两个矩形波,则被测件为上部探针或下部探针,如果灰度向量f
1',f
2',...,f
n'具有一个矩形波,则被测件为中部探针;
If the grayscale vector f 1 ',f 2 ',...,f n ' has two rectangular waves, the DUT is the upper probe or the lower probe, if the gray vector f 1 ',f 2 ', ...,f n ' has a rectangular wave, the DUT is the middle probe;
步骤g、提取时间关键参数:Step g, the key parameters of extraction time:
如果被测件为上部探针或下部探针,提取左侧矩形波下降沿所对应的累加图像f
i'及其对应时间t
i和右侧矩形波上升沿所对应的累加图像f
j'及其对应时间t
j,并记录所述两幅累加图像的时间间隔|t
j-t
i|;
If the DUT is the upper probe or the lower probe, extract the accumulated image f i ' corresponding to the falling edge of the left rectangular wave and its corresponding time t i and the accumulated image f j ' corresponding to the rising edge of the right rectangular wave and It corresponds to time t j , and records the time interval |t j -t i | of the two accumulated images;
如果被测件为中部探针,提取矩形波上升沿所对应的累加图像f
i'及其对应时间t
i和下降沿所对应的累加图像f
j'及其对应时间t
j,并记录所述两幅累加图像的时间间隔|t
j-t
i|;
If the DUT is a middle probe, extract the accumulated image f i ' corresponding to the rising edge of the rectangular wave and its corresponding time t i and the accumulated image f j ' and its corresponding time t j corresponding to the falling edge, and record the The time interval between two accumulated images |t j -t i |;
步骤h、计算尺寸关键参数:Step h, calculate the key parameters of size:
根据步骤g提取的时间关键参数t
i和t
j,成像物镜的物距为l
1,像距为l
2,平移台的移动速度v,得到尺寸关键参数d为:
According to the time critical parameters t i and t j extracted in step g, the object distance of the imaging objective is l 1 , the image distance is l 2 , and the moving speed v of the translation stage, the key size parameter d is obtained as:
所述尺寸关键参数d为中部探针的直径或上部探针孔的内环直径或下部探针孔的内环直径。The dimension key parameter d is the diameter of the middle probe or the inner ring diameter of the upper probe hole or the inner ring diameter of the lower probe hole.
一种多节MEMS探针关键尺寸测量用探针装载载物台,所述多节MEMS探针包括上部探针,中部探针和下部探针,所述上部探针的底部设置有孔,所述下部探针的顶部设置有孔,中部探针分别插入上部探针的孔和下部探针的孔中,形成两套孔轴配合结构;A multi-section MEMS probe key dimension measurement probe loading stage, the multi-section MEMS probe includes an upper probe, a middle probe and a lower probe, and the bottom of the upper probe is provided with a hole, so the The top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
所述多节MEMS探针关键尺寸测量用探针装载载物台包括固定台和装载台,所述固定台和装载台之间通过转轴连接;The probe loading stage for measuring the critical dimension of the multi-section MEMS probe includes a fixed stage and a loading stage, and the fixed stage and the loading stage are connected by a rotating shaft;
所述固定台包括下部承载台和上部参考台,所述下部承载台一个侧面要宽于上部参考台,在所述侧面,上部参考台通过转轴与装载台连接,所述上部参考台与装载台厚度相同,在上部参考台与装载台折叠后,装载台的上表面与上部参考台重合,在上部参考台与装载台打开后,装载台的下表面由下部承载台依托,装载台的上表面与上部参考台位于同一水平面;The fixed platform includes a lower bearing platform and an upper reference platform. One side of the lower bearing platform is wider than the upper reference platform. On the side surface, the upper reference platform is connected to the loading platform through a rotating shaft, and the upper reference platform is connected to the loading platform. The thickness is the same. After the upper reference platform and the loading platform are folded, the upper surface of the loading platform coincides with the upper reference platform. After the upper reference platform and the loading platform are opened, the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform It is on the same level as the upper reference platform;
所述装载台为框状结构,装载台的侧面设置有挤压结构,相对连接上部参考台的另一侧,设置有竖直调整支架,所述竖直调整支架的端部设置有升降板,所述升降板能够沿竖直调整支架上下调整;被测件的待测面与装载台上表面位于同一水平面,被测件的另一端面接触升降板,并与升降板表面涂覆的粘性材料粘贴;The loading table is a frame-like structure, the side of the loading table is provided with an extrusion structure, and the other side opposite to the upper reference table is provided with a vertical adjustment bracket, and the end of the vertical adjustment bracket is provided with a lifting plate, The lifting plate can be adjusted up and down along the vertical adjustment bracket; the surface to be tested of the test piece and the upper surface of the loading table are located on the same level, and the other end face of the test piece is in contact with the lifting plate and is in contact with the viscous material coated on the surface of the lifting plate. paste;
所述被测件的待测面反光镀膜,装载台的上表面吸光镀膜。The surface to be tested of the test piece is reflectively coated, and the upper surface of the loading table is coated with light absorption.
一种多节MEMS探针关键尺寸测量用探针装载方法,所述多节MEMS探针包括上部探针,中部探针和下部探针,所述上部探针的底部设置有孔,所述下部探针的顶部设置有孔,中部探针分别插入上部探针的孔和下部探针的孔中,形成两套孔轴配合结构;A probe loading method for critical dimension measurement of a multi-section MEMS probe, the multi-section MEMS probe comprises an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, and the lower probe is provided with a hole. The top of the probe is provided with a hole, and the middle probe is inserted into the hole of the upper probe and the hole of the lower probe respectively, forming two sets of hole-shaft matching structures;
所述多节MEMS探针关键尺寸测量用探针装载方法包括以下步骤:The probe loading method for critical dimension measurement of a multi-section MEMS probe includes the following steps:
步骤a、在被测件的待测面反光镀膜,在装载台的上表面吸光镀膜,所述被测件为上部探针,中部探针或下部探针;Step a, reflective coating on the surface to be measured of the test piece, and light absorption coating on the upper surface of the loading platform, where the test piece is an upper probe, a middle probe or a lower probe;
步骤b、在上部参考台与装载台折叠后,被测件待测面向下,贴边沿摆放到装载台框状结构中;Step b. After the upper reference table and the loading table are folded, the object to be tested faces downward, and the edge is placed in the frame-like structure of the loading table;
步骤c、调节测试环境温度到常温或裸芯工作环境温度,使上部探针或下部探针完成热胀冷缩或使中部探针完成热缩冷涨;Step c, adjusting the temperature of the test environment to normal temperature or the working environment temperature of the bare core, so that the upper probe or the lower probe completes thermal expansion and cold contraction or the middle probe completes thermal contraction and cold expansion;
步骤d、调整挤压结构,将被测件用挤压结构固定在装载台框状结构中,避免升降板挤压被测件时使被测件晃动,造成被测件参数测试不准确;Step d, adjust the extrusion structure, and fix the test piece in the frame-like structure of the loading table with the extrusion structure, so as to avoid the test piece from shaking when the lifting plate squeezes the test piece, resulting in inaccurate parameter test of the test piece;
步骤e、调整升降板,使升降板挤压在被测件上,升降板表面涂覆的粘性材料粘贴住被测件,并固定升降板;Step e. Adjust the lift plate so that the lift plate is pressed on the test piece, the sticky material coated on the surface of the lift plate sticks to the test piece, and the lift plate is fixed;
步骤f、调整挤压结构,将被测件与挤压结构分离,避免挤压结构挤压被测件时使被测件发生形变,造成被测件参数测试不准确;Step f, adjusting the extrusion structure to separate the tested piece from the extrusion structure, so as to avoid the deformation of the tested piece when the extrusion structure squeezes the tested piece, resulting in inaccurate parameter testing of the tested piece;
步骤g、将上部参考台与装载台打开,此时,装载台的下表面由下部承载台依托,装载台的上表面与上部参考台位于同一水平面。Step g. Open the upper reference platform and the loading platform. At this time, the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform and the upper reference platform are located on the same horizontal plane.
第一、本发明公开了一种面向超高温工作环境下芯片测试的MEMS探针结构,其关键结构在于探针包括安装在上导板的上部探针,穿过中间导板的中部探针和安装在下导板的下部探针;同时,上导板,中间导板和下导板在100摄氏度到200摄氏度之间,体积随温度的变化小于相邻两个探针之间距离的1/10;上部探针和下部探针在100摄氏度到200摄氏度之间,具有热胀冷缩特性;中部探针在100摄氏度到200摄氏度之间,具有热缩冷胀特性;并且,上部探针的底部设置有孔,所述下部探针的顶部设置有孔,中部探针分别插入上部探针的孔和下部探针的孔中,形成两套孔轴配合结构,在100摄氏度以下,中部探针与上部探针和下部探针之间为过渡配合;在100摄氏度向200摄氏度变化时,中部探针与上部探针和下部探针之间由过渡配合转为间隙配合;以上结构、热胀冷缩特性以及孔轴配合关系缺一不可的条件下,即可实现大多数普通温度工作环境下芯片的测试工作,而且 能够实现超高温工作环境下芯片的测试工作。First, the present invention discloses a MEMS probe structure for chip testing in an ultra-high temperature working environment. The key structure is that the probe includes an upper probe installed on the upper guide plate, a middle probe passing through the middle guide plate, and a lower probe installed on the lower guide plate. The lower probe of the guide plate; at the same time, the upper guide plate, the middle guide plate and the lower guide plate are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than 1/10 of the distance between the two adjacent probes; the upper probe and the lower The probe is between 100 degrees Celsius and 200 degrees Celsius, and has thermal expansion and cold contraction characteristics; the middle probe is between 100 degrees Celsius and 200 degrees Celsius, and has thermal contraction and cold expansion characteristics; and the bottom of the upper probe is provided with holes, the said The top of the lower probe is provided with a hole, and the middle probe is inserted into the hole of the upper probe and the hole of the lower probe respectively, forming two sets of hole-shaft matching structures. Below 100 degrees Celsius, the middle probe and the upper probe and the lower probe There is a transition fit between the needles; when the temperature changes from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe, the upper probe and the lower probe changes from a transition fit to a clearance fit; the above structure, thermal expansion and contraction characteristics and hole-shaft fit relationship Under the indispensable conditions, the test work of the chip under the working environment of most ordinary temperature can be realized, and the test work of the chip under the working environment of ultra-high temperature can be realized.
第二、本发明一种面向超高温工作环境下芯片测试的MEMS探针结构,由于在100摄氏度以下,中部探针与上部探针和下部探针之间为过渡配合;在100摄氏度向200摄氏度变化时,中部探针与上部探针和下部探针之间由过渡配合转为间隙配合;这种特殊结构在超高温工作环境下,探针的长度可以进行自动调节,自然实现裸芯上所有待检测的焊盘或触点均有探针接触,同现有技术相比,最显著的特点在于无需使探针部分保持低温,即节省了必须为亚微米级的冷却系统,降低了探针卡制作成本和制作难度。Second, the present invention is a MEMS probe structure for chip testing in an ultra-high temperature working environment. Since the temperature is below 100 degrees Celsius, the middle probe is a transition fit between the upper probe and the lower probe; at 100 degrees Celsius to 200 degrees Celsius When changing, the transition fit between the middle probe and the upper probe and the lower probe changes from a transition fit to a clearance fit; this special structure can automatically adjust the length of the probe in the ultra-high temperature working environment, naturally realizing all the parts on the bare core. The pads or contacts to be inspected all have probe contacts. Compared with the prior art, the most significant feature is that the probe part does not need to be kept at a low temperature, that is, the cooling system that must be sub-micron is saved, and the probe is reduced. Card production cost and production difficulty.
第三、本发明还提供了针对面向超高温工作环境下芯片测试的MEMS探针结构的宽温度范围工作环境下芯片测试方法。Thirdly, the present invention also provides a chip testing method in a wide temperature range working environment for the MEMS probe structure for chip testing in an ultra-high temperature working environment.
第四、针对具有上部探针、中部探针和下部探针这种多节MEMS探针结构,同时为了确保在100摄氏度以下,中部探针与上部探针和下部探针之间为过渡配合,在100摄氏度向200摄氏度变化时,中部探针与上部探针和下部探针之间由过渡配合转为间隙配合;对探针关键尺寸的检测尤为重要,然而,由于探针的结构是全新设计的,因此针对这种多节MEMS探针进行检测的装置也无从查阅,针对此问题,本发明还提供了一种多节MEMS探针用多参数检测光机电算控一体化装置和方法,该装置包括激光器、第一针孔、棱镜、成像物镜、被测件、第二针孔、图像传感器、载物台和平移台;激光器、第一针孔、棱镜、成像物镜、第二针孔和图像传感器由平移台承载,能够在水平面内移动,实现对被测件上表面的扫描;载物台包括固定台和装载台,被测件的待测面反光镀膜,装载台的上表面吸光镀膜,实现清晰分辨是否扫描到了被测件;该方法首先打开上部参考台与装载台,然后调整载物台,再扫描被测件,接着建立数组,图像处理,判断被测件的类型,最后提取时间关键参数,计算尺寸关键参数;在本发明多节MEMS探针用多参数检测光机电算控一体化装置和方法下,仅需要平移台同时承载激光器、第一针孔、棱镜、成像物镜、第二针孔和图像传感器进行匀速运动,即可实现对本发明多节MEMS探针关键参数进行扫描检测。Fourth, for a multi-section MEMS probe structure with an upper probe, a middle probe and a lower probe, and at the same time to ensure that the temperature is below 100 degrees Celsius, the middle probe, the upper probe and the lower probe are transition fit, When changing from 100 degrees Celsius to 200 degrees Celsius, the transition fit between the middle probe and the upper probe and the lower probe changes from a transition fit to a clearance fit; the detection of the key dimensions of the probe is particularly important, however, because the structure of the probe is a new design Therefore, the device for detecting this multi-section MEMS probe cannot be consulted. In view of this problem, the present invention also provides a multi-parameter detection optical-mechanical-computer-control integration device and method for a multi-section MEMS probe. The device includes a laser, a first pinhole, a prism, an imaging objective, a DUT, a second pinhole, an image sensor, a stage and a translation stage; the laser, the first pinhole, the prism, the imaging objective, the second pinhole and The image sensor is carried by the translation stage, which can move in the horizontal plane to scan the upper surface of the test piece; the stage includes a fixed stage and a loading stage, the test surface of the test piece is reflective coating, and the upper surface of the loading stage is light-absorbing coating , to clearly distinguish whether the DUT has been scanned; this method first opens the upper reference stage and the loading stage, then adjusts the stage, scans the DUT, then establishes an array, performs image processing, determines the type of the DUT, and finally extracts Time key parameter, calculation size key parameter; under the multi-parameter detection opto-mechanical-computer-control integration device and method for multi-section MEMS probes of the present invention, only the translation stage is required to simultaneously carry the laser, the first pinhole, the prism, the imaging objective lens, When the second pinhole and the image sensor move at a uniform speed, the scanning detection of the key parameters of the multi-section MEMS probe of the present invention can be realized.
第五、本发明虽然提供了一种多节MEMS探针用多参数检测光机电算控一体化装置和方法,该装置和方法采用了光学显微原理,然而,这项技术的关键前提在于待测面必须要与第二针孔共焦,同时在MEMS元件亚微米的尺寸下,微小的形变都可能造成检测不准确,因此又不能用夹具直接夹持多节MEMS探针结构,这种既要求精确摆放位置又不能直接夹持的要求给多节MEMS探针结构的摆放带来了相当大的困难,为此,本发明还提供了一种多节MEMS探针关键尺寸测量用探针装载载物台和一种多节MEMS探针关键尺寸测量用探针装载方法,该探针装载载物台包括固定台和装载台,固定台和装载台之间通过转轴连 接;固定台包括下部承载台和上部参考台;装载台侧面设置有挤压结构,相对连接上部参考台的另一侧,设置有竖直调整支架,竖直调整支架的端部设置有升降板;被测件的待测面与装载台上表面位于同一水平面,被测件的另一端面接触升降板;该方法首先对被测件反光镀膜,对装载台吸光镀膜,然后在上部参考台与装载台折叠后,被测件待测面向下,贴边沿摆放到装载台框状结构中,再调节温度,调整挤压结构,将被测件用挤压结构固定在装载台框状结构中,然后调整升降板,使升降板粘贴住被测件,并将被测件与挤压结构分离,最后将上部参考台与装载台打开;在上述结构和方法下,探针的待测面通过上部参考台来保证与第二针孔共焦;通过上部参考台与升降板将多节MEMS探针结构从上下方向固定,同时利用升降板表面涂覆的粘性材料粘贴住多节MEMS探针结构,且粘贴位置不是被测面,这样就可以解放挤压结构,让多节MEMS探针结构在测试过程中不被夹持,有效避免多节MEMS探针结构被夹持而产生弹性形变造成测量不准确的问题。Fifth, although the present invention provides a multi-parameter detection opto-mechanical-computer-control integration device and method for multi-section MEMS probes, the device and method adopt the principle of optical microscopy, however, the key premise of this technology is to be The measuring surface must be confocal with the second pinhole. At the same time, under the sub-micron size of the MEMS element, the small deformation may cause inaccurate detection, so the multi-section MEMS probe structure cannot be directly clamped by the fixture. The requirement of precise placement without direct clamping brings considerable difficulties to the placement of the multi-section MEMS probe structure. Therefore, the present invention also provides a multi-section MEMS probe key dimension measurement probe. A needle loading stage and a probe loading method for critical dimension measurement of a multi-section MEMS probe, the probe loading stage includes a fixed stage and a loading stage, and the fixed stage and the loading stage are connected by a rotating shaft; the fixed stage includes The lower loading platform and the upper reference platform; the side of the loading platform is provided with an extrusion structure, and the other side connected to the upper reference platform is provided with a vertical adjustment bracket, and the end of the vertical adjustment bracket is provided with a lifting plate; The surface to be tested and the upper surface of the loading table are on the same level, and the other end face of the test piece is in contact with the lift plate; this method first coats the test piece with reflective coating, absorbs light on the loading table, and then folds the upper reference table and the loading table, The part to be tested faces downward, and the edge is placed in the frame-like structure of the loading table, and then the temperature is adjusted, the extrusion structure is adjusted, the test piece is fixed in the frame-like structure of the loading table with the extrusion structure, and then the lifting plate is adjusted. , make the lifting plate stick to the test piece, separate the test piece from the extrusion structure, and finally open the upper reference table and the loading table; under the above structure and method, the test surface of the probe is guaranteed by the upper reference table Confocal with the second pinhole; the multi-section MEMS probe structure is fixed from the upper and lower directions through the upper reference stage and the lifting plate, and the multi-section MEMS probe structure is pasted by the adhesive material coated on the surface of the lifting plate, and the sticking position is not In this way, the extrusion structure can be released, so that the multi-section MEMS probe structure is not clamped during the test process, which effectively avoids the problem of inaccurate measurement caused by elastic deformation caused by the multi-section MEMS probe structure being clamped.
图1是本发明面向超高温工作环境下芯片测试的MEMS探针结构示意图。FIG. 1 is a schematic structural diagram of a MEMS probe for chip testing in an ultra-high temperature working environment according to the present invention.
图2是本发明宽温度范围工作环境下芯片测试方法中常规温度工作环境下芯片测试方法的流程图。2 is a flow chart of a chip testing method under a conventional temperature working environment in the chip testing method under a wide temperature range working environment of the present invention.
图3是本发明宽温度范围工作环境下芯片测试方法中超高温工作环境下芯片测试方法的流程图。FIG. 3 is a flow chart of the chip testing method under the ultra-high temperature working environment in the chip testing method under the wide temperature range working environment of the present invention.
图4是本发明多节MEMS探针用多参数检测光机电控一体化装置的结构示意图。4 is a schematic structural diagram of a multi-parameter detection opto-mechanical-control integrated device for a multi-section MEMS probe according to the present invention.
图5是本发明多节MEMS探针用多参数检测光机电控一体化方法的流程图。FIG. 5 is a flow chart of an integrated opto-mechanical control method for multi-parameter detection of a multi-section MEMS probe according to the present invention.
图6是本发明多节MEMS探针用多参数检测光机电控一体化方法中被测件为上部探针或下部探针时的测量原理示意图。6 is a schematic diagram of the measurement principle when the object to be tested is an upper probe or a lower probe in the multi-parameter detection opto-mechanical control integration method for multi-section MEMS probes of the present invention.
图7是本发明多节MEMS探针用多参数检测光机电控一体化方法中被测件为中部探针时的测量原理示意图。FIG. 7 is a schematic diagram of the measurement principle when the object under test is the middle probe in the multi-parameter detection opto-mechanical-control integration method for the multi-section MEMS probe of the present invention.
图8是本发明多节MEMS探针关键尺寸测量用探针装载载物台在上部参考台与装载台折叠后的结构示意图。8 is a schematic structural diagram of the probe loading stage for measuring the critical dimension of the multi-section MEMS probe according to the present invention after the upper reference stage and the loading stage are folded.
图9是本发明多节MEMS探针关键尺寸测量用探针装载载物台在上部参考台与装载台打开后的结构示意图。9 is a schematic structural diagram of the probe loading stage for measuring the critical dimension of the multi-section MEMS probe according to the present invention after the upper reference stage and the loading stage are opened.
图10是本发明多节MEMS探针关键尺寸测量用探针装载方法的流程图。FIG. 10 is a flow chart of a probe loading method for critical dimension measurement of a multi-section MEMS probe according to the present invention.
图中:1复合探针头结构、1-1上导板、1-2中间导板、1-3下导板、1-4探针、1-4-1上 部探针、1-4-2中部探针、1-4-3下部探针、2转接板、3PCB板、4-1激光器、4-2第一针孔、4-3棱镜、4-4成像物镜、4-5被测件、4-6第二针孔、4-7图像传感器、4-8载物台、4-8-1固定台、4-8-1-1下部承载台、4-8-1-2上部参考台、4-8-2装载台、4-8-3转轴、4-8-4挤压结构、4-8-5竖直调整支架、4-8-6升降板、4-9平移台。In the figure: 1 composite probe head structure, 1-1 upper guide plate, 1-2 middle guide plate, 1-3 lower guide plate, 1-4 probe, 1-4-1 upper probe, 1-4-2 middle probe needle, 1-4-3 lower probe, 2 adapter board, 3PCB board, 4-1 laser, 4-2 first pinhole, 4-3 prism, 4-4 imaging objective lens, 4-5 DUT, 4-6 second pinhole, 4-7 image sensor, 4-8 stage, 4-8-1 fixed stage, 4-8-1-1 lower stage, 4-8-1-2 upper reference stage , 4-8-2 loading platform, 4-8-3 shaft, 4-8-4 extrusion structure, 4-8-5 vertical adjustment bracket, 4-8-6 lifting plate, 4-9 translation platform.
下面结合附图对本发明具体实施方式作进一步详细描述。The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
具体实施方式一Specific implementation one
以下是本发明面向超高温工作环境下芯片测试的MEMS探针结构的具体实施方式。The following is a specific embodiment of the MEMS probe structure for chip testing in an ultra-high temperature working environment of the present invention.
本实施方式下的面向超高温工作环境下芯片测试的MEMS探针结构,结构示意图如图1所示,该MEMS探针结构从上到下依次设置PCB板3、转接板2和复合探针头结构1,所述复合探针头结构1包括上导板1-1,中间导板1-2和下导板1-3,探针1-4从转接板2开始,穿过上导板1-1和中间导板1-2后,从下导板1-3伸出;其中,上导板1-1,中间导板1-2和下导板1-3由绝缘材料制成,探针1-4由金属导电材料制成;A schematic diagram of the MEMS probe structure for chip testing in an ultra-high temperature working environment in this embodiment is shown in FIG. 1 . The MEMS probe structure is provided with a PCB board 3 , an adapter board 2 and a composite probe in sequence from top to bottom. Head structure 1, the composite probe head structure 1 includes an upper guide plate 1-1, a middle guide plate 1-2 and a lower guide plate 1-3, the probes 1-4 start from the adapter plate 2 and pass through the upper guide plate 1-1 After connecting with the middle guide plate 1-2, it extends from the lower guide plate 1-3; wherein, the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are made of insulating materials, and the probes 1-4 are made of metal conductive material;
所述探针1-4包括安装在上导板1-1的上部探针1-4-1,穿过中间导板1-2的中部探针1-4-2和安装在下导板1-3的下部探针1-4-3;The probes 1-4 include an upper probe 1-4-1 installed on the upper guide plate 1-1, a middle probe 1-4-2 passing through the middle guide plate 1-2 and a lower part installed on the lower guide plate 1-3 Probe 1-4-3;
所述中间导板1-2上设置有通槽,中部探针1-4-2从通槽内穿过中间导板1-2,所述中间导板1-2能够在垂直探针1-4的平面内运动,确保探针1-4能够向同一方向弯曲且不短路;The middle guide plate 1-2 is provided with a through groove, and the middle probe 1-4-2 passes through the middle guide plate 1-2 from the through groove, and the middle guide plate 1-2 can be perpendicular to the plane of the probe 1-4. Internal movement to ensure that probes 1-4 can bend in the same direction without short-circuiting;
各零部件受热膨胀特性为,上导板1-1,中间导板1-2和下导板1-3在100摄氏度到200摄氏度之间,体积随温度的变化小于相邻两个探针之间距离的1/10;上部探针1-4-1和下部探针1-4-3在100摄氏度到200摄氏度之间,具有热胀冷缩特性;中部探针1-4-2在100摄氏度到200摄氏度之间,具有热缩冷胀特性;The thermal expansion characteristics of each part are that the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are between 100 degrees Celsius and 200 degrees Celsius, and the volume change with temperature is less than the distance between two adjacent probes. 1/10; The upper probe 1-4-1 and the lower probe 1-4-3 are between 100 degrees Celsius and 200 degrees Celsius, with thermal expansion and cold contraction characteristics; the middle probe 1-4-2 is between 100 degrees Celsius and 200 degrees Celsius Between degrees Celsius, it has the characteristics of thermal contraction and cold expansion;
所述上部探针1-4-1的底部设置有孔,所述下部探针1-4-3的顶部设置有孔,中部探针1-4-2分别插入上部探针1-4-1的孔和下部探针1-4-3的孔中,形成两套孔轴配合结构,在100摄氏度以下,中部探针1-4-2与上部探针1-4-1和下部探针1-4-3之间为过渡配合;在100摄氏度向200摄氏度变化时,中部探针1-4-2与上部探针1-4-1和下部探针1-4-3之间由过渡配合转为间隙配合。The bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, and the middle probe 1-4-2 is respectively inserted into the upper probe 1-4-1 Two sets of hole and shaft matching structures are formed in the hole of the lower probe 1-4-3. Below 100 degrees Celsius, the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1 -4-3 is a transition fit; when changing from 100 degrees Celsius to 200 degrees Celsius, there is a transition fit between the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1-4-3 Convert to clearance fit.
具体实施方式二Specific embodiment two
以下是本发明面向超高温工作环境下芯片测试的MEMS探针结构的具体实施方式。The following is a specific embodiment of the MEMS probe structure for chip testing in an ultra-high temperature working environment of the present invention.
本实施方式下的面向超高温工作环境下芯片测试的MEMS探针结构,在具体实施方式 一的基础上,进一步限定所述中部探针1-4-2由至少含有锑,铋或镓一种金属的合金材料制作而成。由于锑,铋,镓都是冷胀热缩的物质,常用于制作合金以减小温度对精密仪器的影响,因此用其制作中部探针1-4-2,既可以满足导电性,又能够实现热缩冷胀特性。In the MEMS probe structure for chip testing under ultra-high temperature working environment in this embodiment, on the basis of the specific embodiment 1, it is further defined that the middle probe 1-4-2 is made of at least one of antimony, bismuth or gallium. Made of metal alloy material. Since antimony, bismuth, and gallium are all substances that expand and contract with heat, they are often used to make alloys to reduce the influence of temperature on precision instruments. Therefore, using them to make the middle probe 1-4-2 can not only meet the electrical conductivity, but also can Realize thermal shrinkage and cold expansion characteristics.
此外,用于使钢化玻璃自爆的硫化镍也是冷胀热缩的物质,也可以用于制作中部探针1-4-2。In addition, the nickel sulfide used to make the tempered glass self-explode is also a substance that expands and contracts with heat, and can also be used to make the middle probe 1-4-2.
具体实施方式三Specific embodiment three
以下是本发明宽温度范围工作环境下芯片测试方法的具体实施方式。The following is a specific embodiment of the chip testing method under a wide temperature range working environment of the present invention.
本实施方式下的宽温度范围工作环境下芯片测试方法,在具体实施例一或具体实施例二所述的面向超高温工作环境下芯片测试的MEMS探针结构上实施,该宽温度范围工作环境下芯片测试方法包括常规温度工作环境下芯片测试方法和超高温工作环境下芯片测试方法,其中,常规温度工作环境下芯片测试方法流程图如图2所示,超高温工作环境下芯片测试方法流程图如图3所示;The chip testing method in the wide temperature range working environment in this embodiment is implemented on the MEMS probe structure for chip testing in the ultra-high temperature working environment described in the specific embodiment 1 or the specific embodiment 2. The wide temperature range working environment The chip testing method includes a chip testing method under a conventional temperature working environment and a chip testing method under an ultra-high temperature working environment. Among them, the flow chart of the chip testing method under the conventional temperature working environment is shown in Figure 2, and the chip testing method flow under the ultra-high temperature working environment is shown in Figure 2. Figure as shown in Figure 3;
所述常规温度工作环境是指工作温度在50摄氏度到150摄氏度之间,探针1-4扔能够发生弹性形变的温度范围,该测试方法步骤如下:The normal temperature working environment refers to the temperature range where the working temperature is between 50 degrees Celsius and 150 degrees Celsius, and the probes 1-4 can be elastically deformed. The test method steps are as follows:
步骤a、调整中间导板1-2,使中间导板1-2挤压到中部探针1-4-2侧部,使探针1-4在中间导板1-2的作用下,向一侧弯曲;Step a. Adjust the middle guide plate 1-2 so that the middle guide plate 1-2 is pressed to the side of the middle probe 1-4-2, so that the probe 1-4 is bent to one side under the action of the middle guide plate 1-2 ;
步骤b、将探针1-4接触到裸芯的焊盘或触点上;Step b, contact the probes 1-4 to the pads or contacts of the bare die;
步骤c、用力挤压探针1-4与裸芯,使得在所有探针1-4具有不同弯曲程度的情况下,裸芯上所有待检测的焊盘或触点均有探针1-4接触;Step c. Forcefully squeeze the probes 1-4 and the bare core, so that when all the probes 1-4 have different degrees of bending, all the pads or contacts to be detected on the bare core have the probes 1-4 touch;
步骤d、向裸芯写入测试程序,完成测试;Step d, write a test program to the bare core to complete the test;
所述超高温工作环境是指工作温度在150摄氏度以上,探针1-4不再发生弹性形变的温度范围,该测试方法步骤如下:The ultra-high temperature working environment refers to the temperature range in which the working temperature is above 150 degrees Celsius, and the probes 1-4 no longer elastically deform. The test method steps are as follows:
步骤a、调整中间导板1-2,使探针1-4不发生弯曲;Step a. Adjust the middle guide plate 1-2 so that the probes 1-4 do not bend;
步骤b、将探针1-4接触到裸芯的焊盘或触点上;Step b, contact the probes 1-4 to the pads or contacts of the bare die;
步骤c、将环境温度调整到超高温工作环境温度,使中部探针1-4-2与上部探针1-4-1和下部探针1-4-3之间由过渡配合转为间隙配合;Step c. Adjust the ambient temperature to the ultra-high temperature working ambient temperature, so that the transition fit between the middle probe 1-4-2, the upper probe 1-4-1 and the lower probe 1-4-3 is changed to a clearance fit ;
步骤d、用力挤压探针1-4与裸芯,使得所有探针1-4在不弯曲的情况下,裸芯上所有待检测的焊盘或触点均有探针1-4接触;Step d, squeeze the probes 1-4 and the bare core with force, so that all the probes 1-4 are in contact with the probes 1-4 on all the pads or contacts to be detected on the bare core without being bent;
步骤e、向裸芯写入测试程序,完成测试。Step e, write a test program to the bare core to complete the test.
具体实施方式四Specific embodiment four
以下是本发明多节MEMS探针用多参数检测光机电算控一体化装置的具体实施方式。The following is a specific embodiment of the multi-parameter detection opto-mechanical-computer-control integrated device for a multi-section MEMS probe of the present invention.
本实施方式下的多节MEMS探针用多参数检测光机电算控一体化装置,配合具体实施例一或具体实施例二所述的面向超高温工作环境下芯片测试的MEMS探针结构以及具体实施例三所述的宽温度范围工作环境下芯片测试方法使用;所述多节MEMS探针包括上部探针1-4-1,中部探针1-4-2和下部探针1-4-3,所述上部探针1-4-1的底部设置有孔,所述下部探针1-4-3的顶部设置有孔,中部探针1-4-2分别插入上部探针1-4-1的孔和下部探针1-4-3的孔中,形成两套孔轴配合结构,如图1所示;The multi-section MEMS probe in this embodiment uses a multi-parameter detection opto-mechanical-computer-control integrated device, in conjunction with the MEMS probe structure for chip testing in an ultra-high temperature working environment described in the specific embodiment 1 or the specific embodiment 2, and the specific The chip testing method in the wide temperature range working environment described in the third embodiment is used; the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4- 3. The bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, and the middle probe 1-4-2 is inserted into the upper probe 1-4 respectively In the hole of -1 and the hole of the lower probe 1-4-3, two sets of hole-shaft matching structures are formed, as shown in Figure 1;
所述多节MEMS探针用多参数检测光机电控一体化装置,结构示意图如图4所示,该多节MEMS探针用多参数检测光机电控一体化装置包括:激光器4-1、第一针孔4-2、棱镜4-3、成像物镜4-4、被测件4-5、第二针孔4-6、图像传感器4-7、载物台4-8和平移台4-9;The multi-parameter detection opto-mechanical control integrated device for the multi-section MEMS probe, the schematic diagram is shown in Figure 4, the multi-parameter detection opto-mechanical control device for the multi-section MEMS probe includes: a laser 4-1 , the first pinhole 4-2, the prism 4-3, the imaging objective lens 4-4, the DUT 4-5, the second pinhole 4-6, the image sensor 4-7, the stage 4-8 and the translation stage 4-9;
所述被测件4-5为上部探针1-4-1,中部探针1-4-2或下部探针1-4-3;The tested piece 4-5 is the upper probe 1-4-1, the middle probe 1-4-2 or the lower probe 1-4-3;
所述激光器4-1发出的激光束经过第一针孔4-2形成点光源,所述点光源透射的光束先后经过棱镜4-3和成像物镜4-4后,汇聚到被测件4-5上表面,经过被测件4-5反射,再先后经过成像物镜4-4和棱镜4-3后,反射到第二针孔4-6,从第二针孔4-6透射的光束,由图像传感器4-7接收,并将图像数据传递给计算机处理;The laser beam emitted by the laser 4-1 passes through the first pinhole 4-2 to form a point light source, and the light beam transmitted by the point light source passes through the prism 4-3 and the imaging objective lens 4-4 successively, and then converges to the measured object 4-4. 5. The upper surface is reflected by the DUT 4-5, and then passes through the imaging objective lens 4-4 and the prism 4-3 successively, and then is reflected to the second pinhole 4-6, and the light beam transmitted from the second pinhole 4-6, Received by the image sensor 4-7, and transmits the image data to the computer for processing;
所述激光器4-1、第一针孔4-2、棱镜4-3、成像物镜4-4、第二针孔4-6和图像传感器4-7由平移台4-9承载,能够在水平面内移动,实现对被测件4-5上表面的扫描;The laser 4-1, the first pinhole 4-2, the prism 4-3, the imaging objective lens 4-4, the second pinhole 4-6 and the image sensor 4-7 are carried by the translation stage 4-9 and can Internal movement to scan the upper surface of the DUT 4-5;
所述载物台4-8包括固定台4-8-1和装载台4-8-2,所述被测件4-5的待测面反光镀膜,装载台4-8-2的上表面吸光镀膜。The object stage 4-8 includes a fixed stage 4-8-1 and a loading stage 4-8-2, the surface to be measured of the tested object 4-5 is reflectively coated, and the upper surface of the loading stage 4-8-2 is Absorbing coating.
需要说明的是,在图4中,被测件4-5与载物台4-8之间的关系仅仅为示意关系,并非真正的相对位置和连接关系。It should be noted that, in FIG. 4 , the relationship between the object under test 4-5 and the stage 4-8 is only a schematic relationship, not a real relative position and connection relationship.
具体实施方式五Specific implementation five
以下是本发明多节MEMS探针用多参数检测光机电算控一体化方法的具体实施方式。The following is a specific embodiment of the multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe of the present invention.
本实施方式下的多节MEMS探针用多参数检测光机电算控一体化方法,在具体实施例四所述的多节MEMS探针用多参数检测光机电算控一体化装置上实施,在该多节MEMS探针用多参数检测光机电算控一体化方法中,所述多节MEMS探针包括上部探针1-4-1,中部探针1-4-2和下部探针1-4-3,所述上部探针1-4-1的底部设置有孔,所述下部探针1-4-3的顶部设置有孔,中部探针1-4-2分别插入上部探针1-4-1的孔和下部探针1-4-3的孔中, 形成两套孔轴配合结构,如图1所示;The opto-mechanical-computer-control integration method for multi-parameter detection for multi-section MEMS probes in this embodiment is implemented on the opto-mechanical-computer-control integration device for multi-parameter detection for multi-section MEMS probes described in the fourth specific embodiment. In the multi-parameter detection opto-mechanical-computer-control integration method for a multi-section MEMS probe, the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1- 4-3, the bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, the middle probe 1-4-2 is respectively inserted into the upper probe 1 In the hole of -4-1 and the hole of the lower probe 1-4-3, two sets of hole-shaft matching structures are formed, as shown in Figure 1;
所述多节MEMS探针用多参数检测光机电控一体化方法,流程图如图5所示,该多节MEMS探针用多参数检测光机电控一体化方法包括以下步骤:The multi-parameter detection opto-mechanical control integration method for the multi-section MEMS probe, the flow chart is shown in Figure 5, the multi-section MEMS probe multi-parameter detection opto-mechanical control integration method includes the following steps:
步骤a、打开上部参考台4-8-1-2与装载台4-8-2:Step a. Open the upper reference table 4-8-1-2 and the loading table 4-8-2:
将上部参考台4-8-1-2与装载台4-8-2打开,此时,装载台4-8-2的下表面由下部承载台4-8-1-1依托,装载台4-8-2的上表面与上部参考台4-8-1-2位于同一水平面;Open the upper reference table 4-8-1-2 and the loading table 4-8-2. At this time, the lower surface of the loading table 4-8-2 is supported by the lower bearing table 4-8-1-1, and the loading table 4 - The upper surface of 8-2 is at the same level as the upper reference table 4-8-1-2;
步骤b、调整载物台4-8:Step b. Adjust the stage 4-8:
使被测件4-5中心位于激光束的扫描线上;Make the center of DUT 4-5 on the scanning line of the laser beam;
步骤c、扫描被测件4-5:Step c. Scan the DUT 4-5:
点亮激光器4-1,匀速移动平移台4-9,图像传感器4-7获得一系列不同灰度的光斑图像f
1(x,y),f
2(x,y),...,f
n(x,y),其中,(x,y)表示像素坐标;
Turn on the laser 4-1, move the translation stage 4-9 at a constant speed, and obtain a series of spot images f 1 (x,y),f 2 (x,y),...,f with the image sensor 4-7 n (x,y), where (x,y) represents pixel coordinates;
步骤d、建立数组:Step d. Create an array:
将每一幅光斑图像和获得所述光斑图像的时间组合成数组,如下:Combine each spot image and the time at which the spot image was obtained into an array, as follows:
[f
1(x,y),t
1],[f
2(x,y),t
2],...,[f
n(x,y),t
n]
[f 1 (x,y),t 1 ],[f 2 (x,y),t 2 ],...,[f n (x,y),t n ]
步骤e、图像处理:Step e, image processing:
将图像传感器获得的每一幅图像进行灰度值累加,得到累加图像,如下:The gray value of each image obtained by the image sensor is accumulated to obtain the accumulated image, as follows:
并按照时间先后顺序排列,得到一组灰度矩阵,如下:And arrange them in chronological order to obtain a set of grayscale matrices, as follows:
步骤f、判断被测件4-5的类型:Step f. Determine the type of DUT 4-5:
如果灰度向量f
1',f
2',...,f
n'具有两个矩形波,则被测件4-5为上部探针1-4-1或下部探针1-4-3,如果灰度向量f
1',f
2',...,f
n'具有一个矩形波,则被测件4-5为中部探针1-4-2;
If the grayscale vectors f 1 ', f 2 ', . , if the gray-scale vectors f 1 ', f 2 ',..., f n ' have a rectangular wave, the DUT 4-5 is the middle probe 1-4-2;
步骤g、提取时间关键参数:Step g, the key parameters of extraction time:
如果被测件4-5为上部探针1-4-1或下部探针1-4-3,提取左侧矩形波下降沿所对应的累加图像f
i'及其对应时间t
i和右侧矩形波上升沿所对应的累加图像f
j'及其对应时间t
j,并 记录所述两幅累加图像的时间间隔|t
j-t
i|;
If the DUT 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, extract the accumulated image f i ' corresponding to the falling edge of the left rectangular wave and its corresponding time t i and the right The accumulated image f j ' corresponding to the rising edge of the rectangular wave and its corresponding time t j , and the time interval |t j -t i | of the two accumulated images is recorded;
如果被测件4-5为中部探针1-4-2,提取矩形波上升沿所对应的累加图像f
i'及其对应时间t
i和下降沿所对应的累加图像f
j'及其对应时间t
j,并记录所述两幅累加图像的时间间隔|t
j-t
i|;
If the DUT 4-5 is the middle probe 1-4-2, extract the accumulated image f i ' corresponding to the rising edge of the rectangular wave and its corresponding time t i and the accumulated image f j ' corresponding to the falling edge and its corresponding time t j , and record the time interval |t j -t i | of the two accumulated images;
步骤h、计算尺寸关键参数:Step h, calculate the key parameters of size:
根据步骤g提取的时间关键参数t
i和t
j,成像物镜4-4的物距为l
1,像距为l
2,平移台4-9的移动速度v,得到尺寸关键参数d为:
According to the time key parameters t i and t j extracted in step g, the object distance of the imaging objective lens 4-4 is l 1 , the image distance is l 2 , and the moving speed v of the translation stage 4-9, the key size parameter d is obtained as:
所述尺寸关键参数d为中部探针1-4-2的直径或上部探针1-4-1孔的内环直径或下部探针1-4-3孔的内环直径。The dimension key parameter d is the diameter of the middle probe 1-4-2 or the inner ring diameter of the upper probe 1-4-1 hole or the inner ring diameter of the lower probe 1-4-3 hole.
其中,如果被测件4-5为上部探针1-4-1或下部探针1-4-3,测量原理示意图如图6所示;如果被测件4-5为中部探针1-4-2,测量原理示意图如图7所示;Among them, if the DUT 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, the schematic diagram of the measurement principle is shown in Figure 6; if the DUT 4-5 is the middle probe 1- 4-2, the schematic diagram of the measurement principle is shown in Figure 7;
具体实施方式六Specific embodiment six
以下是本发明多节MEMS探针关键尺寸测量用探针装载载物台的具体实施方式。The following is the specific embodiment of the probe loading stage for the critical dimension measurement of the multi-section MEMS probe of the present invention.
本实施方式下的多节MEMS探针关键尺寸测量用探针装载载物台,配合具体实施例四所述的多节MEMS探针用多参数检测光机电算控一体化装置以及具体实施例五所述的多节MEMS探针用多参数检测光机电算控一体化方法使用;在该多节MEMS探针关键尺寸测量用探针装载载物台中,所述多节MEMS探针包括上部探针1-4-1,中部探针1-4-2和下部探针1-4-3,所述上部探针1-4-1的底部设置有孔,所述下部探针1-4-3的顶部设置有孔,中部探针1-4-2分别插入上部探针1-4-1的孔和下部探针1-4-3的孔中,形成两套孔轴配合结构,如图1所示;The probe loading stage for measuring the critical dimensions of multi-section MEMS probes in this embodiment is combined with the multi-parameter detection opto-mechanical-computer-control integration device for multi-section MEMS probes described in the fourth embodiment and the fifth embodiment. The multi-section MEMS probe is used in the multi-parameter detection optical-mechanical-computer-control integration method; in the multi-section MEMS probe critical dimension measurement probe loading stage, the multi-section MEMS probe includes an upper probe 1-4-1, the middle probe 1-4-2 and the lower probe 1-4-3, the bottom of the upper probe 1-4-1 is provided with a hole, the lower probe 1-4-3 There is a hole at the top of the probe, and the middle probe 1-4-2 is inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3 respectively, forming two sets of hole-shaft matching structures, as shown in Figure 1 shown;
所述多节MEMS探针关键尺寸测量用探针装载载物台,结构示意图如图8和图9所示,该多节MEMS探针关键尺寸测量用探针装载载物台包括固定台4-8-1和装载台4-8-2,所述固定台4-8-1和装载台4-8-2之间通过转轴4-8-3连接;The probe loading stage for measuring the critical dimension of the multi-section MEMS probe is shown in Fig. 8 and Fig. 9 . The probe loading stage for measuring the critical dimension of the multi-section MEMS probe includes a fixed table 4- 8-1 and the loading platform 4-8-2, the fixed platform 4-8-1 and the loading platform 4-8-2 are connected by the rotating shaft 4-8-3;
所述固定台4-8-1包括下部承载台4-8-1-1和上部参考台4-8-1-2,所述下部承载台4-8-1-1一个侧面要宽于上部参考台4-8-1-2,在所述侧面,上部参考台4-8-1-2通过转轴4-8-3与装载台4-8-2连接,所述上部参考台4-8-1-2与装载台4-8-2厚度相同,在上部参考台4-8-1-2 与装载台4-8-2折叠后,装载台4-8-2的上表面与上部参考台4-8-1-2重合,如图8所示,在上部参考台4-8-1-2与装载台4-8-2打开后,装载台4-8-2的下表面由下部承载台4-8-1-1依托,装载台4-8-2的上表面与上部参考台4-8-1-2位于同一水平面,如图9所示,所述水平面为图像传感器4-7的像面;The fixing platform 4-8-1 includes a lower bearing platform 4-8-1-1 and an upper reference platform 4-8-1-2. One side of the lower bearing platform 4-8-1-1 is wider than the upper one. The reference table 4-8-1-2, on the side, the upper reference table 4-8-1-2 is connected with the loading table 4-8-2 through the rotating shaft 4-8-3, the upper reference table 4-8 -1-2 is the same thickness as the loading table 4-8-2, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the upper surface of the loading table 4-8-2 and the upper reference The table 4-8-1-2 overlaps, as shown in Figure 8, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are opened, the lower surface of the loading table 4-8-2 is replaced by the lower The loading platform 4-8-1-1 is supported, and the upper surface of the loading platform 4-8-2 and the upper reference platform 4-8-1-2 are located on the same horizontal plane. As shown in FIG. 9, the horizontal plane is the image sensor 4- 7's image plane;
所述装载台4-8-2为框状结构,装载台4-8-2的侧面设置有挤压结构4-8-4,相对连接上部参考台4-8-1-2的另一侧,设置有竖直调整支架4-8-5,所述竖直调整支架4-8-5的端部设置有升降板4-8-6,所述升降板4-8-6能够沿竖直调整支架4-8-5上下调整;被测件4-5的待测面与装载台4-8-2上表面位于同一水平面,被测件4-5的另一端面接触升降板4-8-6,并与升降板4-8-6表面涂覆的粘性材料粘贴;The loading table 4-8-2 is a frame-like structure, and the side of the loading table 4-8-2 is provided with an extrusion structure 4-8-4, which is opposite to the other side connected to the upper reference table 4-8-1-2 , is provided with a vertical adjustment bracket 4-8-5, the end of the vertical adjustment bracket 4-8-5 is provided with a lift plate 4-8-6, the lift plate 4-8-6 can be vertically adjusted Adjust the bracket 4-8-5 to adjust up and down; the surface to be tested of the DUT 4-5 and the upper surface of the loading table 4-8-2 are on the same level, and the other end face of the DUT 4-5 is in contact with the lift plate 4-8 -6, and paste it with the sticky material coated on the surface of the lift plate 4-8-6;
所述被测件4-5的待测面反光镀膜,装载台4-8-2的上表面吸光镀膜。The surface to be tested 4-5 is coated with a reflective coating, and the upper surface of the loading platform 4-8-2 is coated with light absorption.
具体实施方式七Specific embodiment seven
以下是本发明多节MEMS探针关键尺寸测量用探针装载方法的具体实施方式。The following is a specific embodiment of the probe loading method for critical dimension measurement of a multi-section MEMS probe of the present invention.
本实施方式下的多节MEMS探针关键尺寸测量用探针装载方法,在具体实施例六所述的多节MEMS探针关键尺寸测量用探针装载载物台上实施,在该多节MEMS探针关键尺寸测量用探针装载方法中,所述多节MEMS探针包括上部探针1-4-1,中部探针1-4-2和下部探针1-4-3,所述上部探针1-4-1的底部设置有孔,所述下部探针1-4-3的顶部设置有孔,中部探针1-4-2分别插入上部探针1-4-1的孔和下部探针1-4-3的孔中,形成两套孔轴配合结构,如图1所示;The probe loading method for critical dimension measurement of multi-section MEMS probes in this embodiment is implemented on the probe loading stage for critical dimension measurement of multi-section MEMS probes described in the specific embodiment 6. In the probe loading method for probe critical dimension measurement, the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4-3, the upper probe The bottom of the probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, and the middle probe 1-4-2 is inserted into the hole and the upper probe 1-4-1 respectively. In the holes of the lower probe 1-4-3, two sets of hole-shaft matching structures are formed, as shown in Figure 1;
所述多节MEMS探针关键尺寸测量用探针装载方法,流程图如图10所示,该多节MEMS探针关键尺寸测量用探针装载方法包括以下步骤:The flow chart of the probe loading method for critical dimension measurement of multi-section MEMS probes is shown in FIG. 10 , and the probe loading method for critical dimension measurement of multi-section MEMS probes includes the following steps:
步骤a、在被测件4-5的待测面反光镀膜,在装载台4-8-2的上表面吸光镀膜,所述被测件4-5为上部探针1-4-1,中部探针1-4-2或下部探针1-4-3;Step a. Reflective coating on the surface to be measured of the DUT 4-5, and absorbing coating on the upper surface of the loading table 4-8-2. The DUT 4-5 is the upper probe 1-4-1, the middle Probe 1-4-2 or lower probe 1-4-3;
步骤b、在上部参考台4-8-1-2与装载台4-8-2折叠后,被测件4-5待测面向下,贴边沿摆放到装载台4-8-2框状结构中;Step b. After the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the object to be tested 4-5 faces downward, and the edge is placed on the loading table 4-8-2 frame. in structure;
步骤c、调节测试环境温度到常温或裸芯工作环境温度,使上部探针1-4-1或下部探针1-4-3完成热胀冷缩或使中部探针1-4-2完成热缩冷涨;Step c. Adjust the test environment temperature to normal temperature or the bare core working environment temperature, so that the upper probe 1-4-1 or the lower probe 1-4-3 can be thermally expanded and contracted or the middle probe 1-4-2 can be completed heat shrink and cold rise;
步骤d、调整挤压结构4-8-4,将被测件4-5用挤压结构4-8-4固定在装载台4-8-2框状结构中,避免升降板4-8-6挤压被测件4-5时使被测件4-5晃动,造成被测件4-5参数测试不准确;Step d, adjust the extrusion structure 4-8-4, and fix the test piece 4-5 in the frame structure of the loading table 4-8-2 with the extrusion structure 4-8-4, so as to avoid the lifting plate 4-8- 6 When the DUT 4-5 is squeezed, the DUT 4-5 is shaken, resulting in inaccurate parameter testing of the DUT 4-5;
步骤e、调整升降板4-8-6,使升降板4-8-6挤压在被测件4-5上,升降板4-8-6表面涂覆的粘性材料粘贴住被测件4-5,并固定升降板4-8-6;Step e. Adjust the lifting plate 4-8-6 so that the lifting plate 4-8-6 is pressed on the DUT 4-5, and the adhesive material coated on the surface of the lifting plate 4-8-6 sticks to the DUT 4. -5, and fix the lifting plate 4-8-6;
步骤f、调整挤压结构4-8-4,将被测件4-5与挤压结构4-8-4分离,避免挤压结构4-8-4挤压被测件4-5时使被测件4-5发生形变,造成被测件4-5参数测试不准确;Step f, adjust the extrusion structure 4-8-4, separate the tested part 4-5 from the extrusion structure 4-8-4, and avoid the extrusion structure 4-8-4 from pressing the tested part 4-5. DUT 4-5 is deformed, resulting in inaccurate parameter test of DUT 4-5;
步骤g、将上部参考台4-8-1-2与装载台4-8-2打开,此时,装载台4-8-2的下表面由下部承载台4-8-1-1依托,装载台4-8-2的上表面与上部参考台4-8-1-2位于同一水平面。Step g, open the upper reference platform 4-8-1-2 and the loading platform 4-8-2, at this time, the lower surface of the loading platform 4-8-2 is supported by the lower bearing platform 4-8-1-1, The upper surface of the loading table 4-8-2 and the upper reference table 4-8-1-2 are located on the same level.
需要说明的是,在以上实施例中,只要不矛盾的技术方案,都能够进行排列组合,由于本领域的技术人员能够根据高中阶段所学习的排列组合数学知识,穷尽所有排列组合后的结果,因此这些结果在本申请中不再一一罗列,但应理解为每一种排列组合结果都被本申请所记载。It should be noted that, in the above embodiments, as long as the technical solutions that are not contradictory can be permuted and combined, because those skilled in the art can exhaust all permutation and combination results according to the mathematical knowledge of permutation and combination learned in high school, Therefore, these results are not listed one by one in this application, but it should be understood that each permutation and combination result is recorded in this application.
还需要说明的是,以上实施例只是对本专利的示例性说明,并不限定它的保护范围,本领域技术人员还可以对其局部进行改变,只要没有超出本专利的精神实质,都在本专利的保护范围内。It should also be noted that the above embodiments are only exemplary descriptions of this patent, and do not limit its protection scope. Those skilled in the art can also make partial changes to it, as long as it does not exceed the spirit of this patent, it is within the scope of this patent. within the scope of protection.
Claims (1)
- 多节MEMS探针用多参数检测光机电算控一体化装置,其特征在于,所述多节MEMS探针包括上部探针(1-4-1),中部探针(1-4-2)和下部探针(1-4-3),所述上部探针(1-4-1)的底部设置有孔,所述下部探针(1-4-3)的顶部设置有孔,中部探针(1-4-2)分别插入上部探针(1-4-1)的孔和下部探针(1-4-3)的孔中,形成两套孔轴配合结构;A multi-parameter detection opto-mechanical-computer-control integration device for a multi-section MEMS probe, characterized in that the multi-section MEMS probe comprises an upper probe (1-4-1) and a middle probe (1-4-2) and the lower probe (1-4-3), the bottom of the upper probe (1-4-1) is provided with a hole, the top of the lower probe (1-4-3) is provided with a hole, and the middle probe (1-4-3) is provided with a hole. The needles (1-4-2) are respectively inserted into the holes of the upper probes (1-4-1) and the holes of the lower probes (1-4-3) to form two sets of hole-shaft matching structures;所述多节MEMS探针用多参数检测光机电控一体化装置包括:激光器(4-1)、第一针孔(4-2)、棱镜(4-3)、成像物镜(4-4)、被测件(4-5)、第二针孔(4-6)、图像传感器(4-7)、载物台(4-8)和平移台(4-9);The multi-parameter detection opto-mechanical control integrated device for a multi-section MEMS probe comprises: a laser (4-1), a first pinhole (4-2), a prism (4-3), an imaging objective lens (4-4) ), the DUT (4-5), the second pinhole (4-6), the image sensor (4-7), the stage (4-8) and the translation stage (4-9);所述被测件(4-5)为上部探针(1-4-1),中部探针(1-4-2)或下部探针(1-4-3);The tested piece (4-5) is an upper probe (1-4-1), a middle probe (1-4-2) or a lower probe (1-4-3);所述激光器(4-1)发出的激光束经过第一针孔(4-2)形成点光源,所述点光源透射的光束先后经过棱镜(4-3)和成像物镜(4-4)后,汇聚到被测件(4-5)上表面,经过被测件(4-5)反射,再先后经过成像物镜(4-4)和棱镜(4-3)后,反射到第二针孔(4-6),从第二针孔(4-6)透射的光束,由图像传感器(4-7)接收,并将图像数据传递给计算机处理;The laser beam emitted by the laser (4-1) passes through the first pinhole (4-2) to form a point light source, and the light beam transmitted by the point light source passes through the prism (4-3) and the imaging objective lens (4-4) successively. , converges on the upper surface of the DUT (4-5), is reflected by the DUT (4-5), passes through the imaging objective lens (4-4) and the prism (4-3), and is reflected to the second pinhole (4-6), the light beam transmitted from the second pinhole (4-6) is received by the image sensor (4-7), and the image data is transmitted to the computer for processing;所述激光器(4-1)、第一针孔(4-2)、棱镜(4-3)、成像物镜(4-4)、第二针孔(4-6)和图像传感器(4-7)由平移台(4-9)承载,能够在水平面内移动,实现对被测件(4-5)上表面的扫描;The laser (4-1), the first pinhole (4-2), the prism (4-3), the imaging objective lens (4-4), the second pinhole (4-6) and the image sensor (4-7) ) is carried by the translation stage (4-9), which can move in the horizontal plane to realize the scanning of the upper surface of the tested part (4-5);所述载物台(4-8)包括固定台(4-8-1)和装载台(4-8-2),所述被测件(4-5)的待测面反光镀膜,装载台(4-8-2)的上表面吸光镀膜。The object stage (4-8) includes a fixed stage (4-8-1) and a loading stage (4-8-2), and the surface to be tested of the tested object (4-5) has a reflective coating, and the loading stage (4-8-2) Light-absorbing coating on the upper surface.
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070133086A1 (en) * | 2005-12-08 | 2007-06-14 | Stefan Wilhelm | Method and apparatus for the examination of probes |
CN105588954A (en) * | 2016-03-23 | 2016-05-18 | 上海理工大学 | Near-field polarized light scanning probe microscope |
CN106840032A (en) * | 2017-04-07 | 2017-06-13 | 安徽电气工程职业技术学院 | Three-dimensional micro-nano noncontact triggering probe and MEMS measurement apparatus |
CN207148108U (en) * | 2017-09-25 | 2018-03-27 | 浙江金枫谷数据服务有限公司 | A kind of soil constituent measurement bar |
CN108387188A (en) * | 2018-02-23 | 2018-08-10 | 仲东明 | Body surface flatness rapid measurement device |
CN108387519A (en) * | 2018-05-03 | 2018-08-10 | 上海市质子重离子临床技术研发中心 | Microscopic system is just set in up-conversion luminescence near-infrared and the multi-functional wide field of colour imaging |
CN112858735A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | Probe loading object stage for measuring key size of multi-section MEMS probe |
CN112858884A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | MEMS probe structure for chip test under ultra-high temperature working environment |
CN112858885A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | Chip testing method under wide temperature range working environment |
CN112858734A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | Probe loading method for measuring key size of multi-section MEMS probe |
CN112904177A (en) * | 2021-01-14 | 2021-06-04 | 强一半导体(苏州)有限公司 | Multi-parameter detection optical-electrical-computer-control integrated device for multi-section MEMS (micro-electromechanical systems) probe |
CN112904176A (en) * | 2021-01-14 | 2021-06-04 | 强一半导体(苏州)有限公司 | Multi-parameter detection optical-electrical-computer calculation control integrated method for multi-section MEMS probe |
-
2021
- 2021-01-14 CN CN202110051019.9A patent/CN112904177B/en active Active
- 2021-07-27 WO PCT/CN2021/108770 patent/WO2022151702A1/en active Application Filing
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070133086A1 (en) * | 2005-12-08 | 2007-06-14 | Stefan Wilhelm | Method and apparatus for the examination of probes |
CN105588954A (en) * | 2016-03-23 | 2016-05-18 | 上海理工大学 | Near-field polarized light scanning probe microscope |
CN106840032A (en) * | 2017-04-07 | 2017-06-13 | 安徽电气工程职业技术学院 | Three-dimensional micro-nano noncontact triggering probe and MEMS measurement apparatus |
CN207148108U (en) * | 2017-09-25 | 2018-03-27 | 浙江金枫谷数据服务有限公司 | A kind of soil constituent measurement bar |
CN108387188A (en) * | 2018-02-23 | 2018-08-10 | 仲东明 | Body surface flatness rapid measurement device |
CN108387519A (en) * | 2018-05-03 | 2018-08-10 | 上海市质子重离子临床技术研发中心 | Microscopic system is just set in up-conversion luminescence near-infrared and the multi-functional wide field of colour imaging |
CN112858735A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | Probe loading object stage for measuring key size of multi-section MEMS probe |
CN112858884A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | MEMS probe structure for chip test under ultra-high temperature working environment |
CN112858885A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | Chip testing method under wide temperature range working environment |
CN112858734A (en) * | 2021-01-14 | 2021-05-28 | 强一半导体(苏州)有限公司 | Probe loading method for measuring key size of multi-section MEMS probe |
CN112904177A (en) * | 2021-01-14 | 2021-06-04 | 强一半导体(苏州)有限公司 | Multi-parameter detection optical-electrical-computer-control integrated device for multi-section MEMS (micro-electromechanical systems) probe |
CN112904176A (en) * | 2021-01-14 | 2021-06-04 | 强一半导体(苏州)有限公司 | Multi-parameter detection optical-electrical-computer calculation control integrated method for multi-section MEMS probe |
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