WO2022145291A1 - 多層膜構造体、多層膜構造体の製造方法、および電子素子 - Google Patents

多層膜構造体、多層膜構造体の製造方法、および電子素子 Download PDF

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WO2022145291A1
WO2022145291A1 PCT/JP2021/047360 JP2021047360W WO2022145291A1 WO 2022145291 A1 WO2022145291 A1 WO 2022145291A1 JP 2021047360 W JP2021047360 W JP 2021047360W WO 2022145291 A1 WO2022145291 A1 WO 2022145291A1
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layer
insulating layer
multilayer film
film structure
adsorption
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French (fr)
Japanese (ja)
Inventor
誠 嘉数
敏之 大石
聖祐 金
浩司 小山
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Saga University NUC
Adamant Namiki Precision Jewel Co Ltd
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Saga University NUC
Adamant Namiki Precision Jewel Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Definitions

  • the present invention relates to a multilayer film structure.
  • the present invention also relates to a method for manufacturing a multilayer film structure. Further, the present invention relates to an electronic device having a multilayer film structure.
  • Diamond semiconductors have a bandgap of 5.47 electron volts, which is about five times that of silicon semiconductors, and have an insulation withstand voltage of 10 MV / cm or more, which is 33 times or more the value of 0.3 MV / cm of silicon, so they are highly efficient. It is expected as a semiconductor material for high power and high frequency transistors. In addition to diamond, other materials with a large bandgap have been proposed.
  • the present inventors have obtained a hole surface concentration of 1 x 10 14 cm -2 by providing a nitrogen dioxide (NO 2 ) adsorption layer on the surface of a hydrogen-adsorbed diamond crystal. Further, the mobility of the field effect transistor (FET) is 32 cm 2 / Vs. However, this mobility is significantly lower than the original mobility of diamond (electrons 4500 cm 2 / Vs, holes 3800 cm 2 / Vs). As described above, even a semiconductor having a large bandgap and expected to have higher mobility due to its dielectric strength and the like cannot express the original properties of the semiconductor material.
  • NO 2 nitrogen dioxide
  • Non-Patent Document 1 Kazu reports that NO 2 molecule becomes an acceptor impurity for hydrogen-terminated diamond and forms holes.
  • the electrical conduction of the whole carrier in the gate structure of the FET will be described with reference to FIGS. 4 and 5.
  • this multilayer film structure 20 201
  • a diamond crystal 1 is used as a substrate, and a hydrogen adsorption layer 12 is provided on the surface thereof, a NO 2 adsorption layer 3 is formed therein, an Al 2 O 3 layer 4 is deposited, and finally.
  • the gate metal layer 5 was deposited on the surface.
  • Non-Patent Documents 2 and 3 also disclose transistors using diamond.
  • Patent Document 1 describes a diamond substrate, a surface layer formed by terminating the surface of the diamond substrate with hydrogen atoms, and an atmosphere formed on the surface layer by exposing the surface layer to the atmosphere.
  • the first adsorption layer made of the above-mentioned molecules, the source electrode and the drain electrode formed on the first adsorption layer at a distance from each other, and the first exposed between the source electrode and the drain electrode.
  • Non-Patent Document 1 methods for expressing the original mobility of a substrate material such as a diamond element are being studied.
  • the NO 2 molecule acceptor that generated the hole becomes a negatively charged ionization acceptor, so the hole running in the hydrogen adsorption layer and the NO 2 adsorption layer between the diamond crystal layer and the Al 2 O 3 film is Due to the ionization impurity scattering mechanism by the NO 2 molecule ionization acceptor and the surface scattering mechanism due to the inevitable surface roughness on the diamond surface, the mobility is significantly lower than the original mobility of diamond, 3800 cm 2 / Vs. Can not. As a result, the channel resistance was also high, and it was not possible to show the original physical characteristics of diamond.
  • an object of the present invention is to provide a multilayer film structure having improved mobility, a method for manufacturing the same, and the like.
  • the present inventor has found that the following invention meets the above object, and has reached the present invention. That is, the present invention relates to the following invention.
  • a multilayer film structure having a second insulating layer and a gate electrode layer arranged on the second insulating layer.
  • the substrate layer contains any crystal selected from the group consisting of gallium nitride (GaN), silicon carbide (SiC), gallium oxide (Ga 2 O 3 ), and diamond, and the first insulation.
  • the substrate layer is a layer of diamond crystals having a hydrogen adsorption layer
  • the first insulating layer is a layer of aluminum oxide (Al 2 O 3 ) having a thickness of 4 to 12 nm, and the adsorption layer is.
  • the nitrogen dioxide (NO 2 ) adsorption layer, the second insulating layer is a layer of aluminum oxide (Al 2 O 3 ) having a thickness of 4 to 100 nm, and the gate electrode is a metal layer.
  • ⁇ 4> An electronic device including the multilayer film structure according to any one of ⁇ 1> to ⁇ 3>.
  • a controlled atmosphere any one selected from the group consisting of nitrogen dioxide (NO 2 ), nitrogen monoxide (NO), sulfur dioxide (SO 2 ), and ozone (O 3 ). It has a forming step of contacting gas molecules to form an adsorption layer, and a second deposition step of depositing a member forming a second insulating layer on the surface of the adsorption layer under a controlled atmosphere.
  • the production according to ⁇ 5> which comprises a hydrogen adsorption layer forming step of irradiating the surface of the substrate layer with hydrogen plasma to form a hydrogen adsorption layer before the first deposition step.
  • Method. ⁇ 7> The hydrogen adsorption forming step, the first deposition step, the forming step, and the second deposition step are performed in the same treatment tank, and the atmosphere is a vacuum or nitrogen-substituted atmosphere.
  • the first deposition step is for depositing aluminum oxide (Al 2 O 3 ), the sample temperature is 50 to 300 ° C., and the forming step is nitrogen dioxide (NO 2 ).
  • the concentration of NO 2 gas is 0.2% or more
  • the supply time is 3 to 20 minutes
  • the degree of vacuum is 6.67 kPa to 26.7 kPa in the forming step.
  • the sample temperature is 50 to 200 ° C.
  • the second deposition step is to deposit aluminum oxide (Al 2 O 3 ), and the sample temperature is 50 to 200 ° C.
  • a multilayer film structure having improved mobility, a method for manufacturing the same, and the like are provided.
  • the multilayer film structure of the present invention has a substrate layer having a band gap of 3.0 electron volt or more, a first insulating layer arranged on the substrate layer, and an arrangement on the first insulating layer.
  • a member forming a first insulating layer is deposited on the surface of a substrate layer having a band gap of 3.0 electron volt or more under a controlled atmosphere. From nitrogen dioxide (NO 2 ), nitrogen monoxide (NO), sulfur dioxide (SO 2 ), and ozone (O 3 ) in a controlled atmosphere on the surface of the first insulating layer.
  • the multilayer film structure of the present invention can exhibit excellent mobility close to the original mobility of the substrate layer.
  • the method for producing a multilayer film structure of the present invention the multilayer film structure of the present invention can be produced, and the configurations corresponding to each can be mutually used in the present application.
  • the present invention is negative from the hole traveling layer by providing a new aluminum oxide (Al 2 O 3 ) layer between the layer on which the hole travels and the layer of the nitrogen dioxide (NO 2 ) molecule acceptor that produces the hole.
  • Al 2 O 3 aluminum oxide
  • NO 2 nitrogen dioxide
  • the mobility of a conventional diamond substrate in a transistor of 30 cm 2 / Vs can be increased 100 times or more to the original mobility of diamond of 3800 cm 2 / Vs.
  • the sheet resistance can be reduced to 1/100 or less.
  • the current value can be increased 100 times or more.
  • the competent power which is the power that can be controlled by the transistor, can be increased 100 times or more.
  • FIG. 1 is a schematic view of the multilayer film structure 10 according to the first embodiment of the present invention.
  • the multilayer film structure 10 has a substrate layer 1, a first insulating layer 2, an adsorption layer 3, a second insulating layer 4, and a gate electrode 5 in this order from the bottom when the substrate is viewed as the lowest layer. ..
  • This multilayer film structure 10 is used for various electronic devices.
  • FIG. 2 is a schematic view of the multilayer film structure 101 according to the second embodiment of the present invention.
  • the multilayer film structure 101 conforms to the structure of the multilayer film structure 10, and has a structure in which the surface of the substrate 1 is subjected to hydrogen adsorption treatment to provide the hydrogen adsorption layer 12.
  • the multilayer film structure 10 (101) has a substrate layer 1.
  • the substrate layer 1 has a bandgap of 3.0 electron volts or more.
  • Such a substrate having a large bandgap has not been able to exhibit the mobility expected from the bandgap or the like in the conventional multilayer film structure.
  • it by using it as the substrate layer of the multilayer film structure 10 (101) of the present invention, its excellent mobility can be exhibited.
  • the substrate layer 1 can include any crystal selected from the group consisting of gallium nitride (GaN), silicon carbide (SiC), gallium oxide (Ga 2 O 3 ), and diamond. This crystal may be substantially any one, or a combination of the above-mentioned crystals or a combination of these and other crystals may be used.
  • the bandgap is 3.4 electron volt for gallium nitride, 3.2 electron volt for silicon carbide, 4.5 to 4.8 electron volt for gallium oxide, and 5.5 electron volt for diamond.
  • the band gap of the substrate layer 1 is preferably 4.0 electron volts or more, and more preferably 5.0 electron volts or more.
  • Diamond crystals are particularly preferable as the substrate layer 1. Further, as the diamond crystal, for example, KENZAN Diamond (registered trademark) of Adamant Namiki Precision Jewelery Co., Ltd. can be preferably used.
  • the substrate layer 1 has a hydrogen adsorption layer 12.
  • the hydrogen adsorption layer 12 can be formed by irradiating the substrate layer 1 with hydrogen plasma. By providing the hydrogen adsorption layer 12, higher mobility can be achieved. Further, by growing the diamond crystal with the microwave plasma CVD apparatus, it is possible to obtain the diamond crystal which becomes the substrate layer 1 having the hydrogen adsorption layer.
  • the multilayer film structure 10 (101) has a first insulating layer 2.
  • the first insulating layer 2 is arranged on the substrate layer 1 so as to be in contact with the substrate layer 1.
  • the first insulating layer 2 is arranged so as to be in contact with the layer provided with the hydrogen adsorption layer 12.
  • the first insulating layer can be an oxide or fluoride layer in the same manner as the second insulating layer. These can be layers of oxides or fluorides of metal or silicon. A layer using these materials is called an insulating layer because it limits the movement of electrons and can substantially eliminate the movement of electrons through the layer by making the layer thicker. Further, as the insulating layer, a layer having a wider bandgap than the bandgap of the substrate layer is used.
  • oxides examples include aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO), hafnium oxide (HfO 2 ), silicon dioxide (SiO 2 ), strontium titanate (SrTiO 3 ), and gallium oxide (SrTiO 3).
  • Ga 2 O 3 ), lithium niobate (LiNbO 3 ), lead zirconate titanate (PZT) and the like can be used.
  • fluorides for example, calcium fluoride (CaF 2 ), magnesium fluoride (MgF 2 ) and the like can be used.
  • the first insulating layer 2 is provided between the substrate layer 1 and the adsorption layer 3 in order to prevent the diffusion of holes and carriers.
  • the thickness of the first insulating layer is preferably 4 to 12 nm. More preferably, it is 6 to 10 nm. Further, from the viewpoint of ease of handling during manufacturing, adjustment of film quality, compatibility with the substrate layer 1, etc., it is particularly preferable to use aluminum oxide, and it is particularly preferable that the thickness is about 8 nm. These thicknesses can be measured with a transmission electron microscope (TEM).
  • TEM transmission electron microscope
  • the multilayer film structure 10 (101) has an adsorption layer 3.
  • the adsorption layer 3 is arranged on the first insulating layer 2 so as to be in contact with the first insulating layer 2.
  • the adsorption layer 3 is a layer on which any gas molecule selected from the group consisting of nitrogen dioxide (NO 2 ), nitric oxide (NO), sulfur dioxide (SO 2 ), and ozone (O 3 ) is adsorbed. ..
  • NO 2 nitrogen dioxide
  • NO nitric oxide
  • SO 2 sulfur dioxide
  • O 3 ozone
  • the multilayer film structure 10 (101) has a second insulating layer 4.
  • the second insulating layer 4 is arranged on the adsorption layer 3 so as to be in contact with the adsorption layer 3.
  • the same material as that of the first insulating layer 2 can be used.
  • the thickness of the second insulating layer 4 is preferably 4 to 100 nm.
  • the upper limit of the thickness of the second insulating layer 4 may be 50 nm or less, 20 nm or less, 12 nm or less, 10 nm or less. Further, the lower limit of the thickness of the second insulating layer 4 may be 6 nm or more.
  • the multilayer film structure 10 (101) has a gate electrode 5.
  • the gate electrode 5 is arranged on the second insulating layer 4 so as to be in contact with the second insulating layer 4.
  • the gate electrode is preferably a metal layer.
  • gold Au
  • Ti laminated film of gold and titanium
  • Al Al / Ti / Au in order from the lower layer
  • Al Al / Ti / Au in order from the lower layer
  • the multilayer film structure 102 can have other structures such as a source electrode 8 and a drain electrode 9.
  • the multilayer film structure 10 (101, 102) can be used for an electronic element or the like which is an element using electric conduction.
  • it can be used for transistors, diodes, MEMS and the like.
  • FIG. 3 is a schematic diagram for explaining an example of a manufacturing process of the multilayer film structure of the present invention.
  • the multilayer film structure 102 can be manufactured by steps 1 to 6.
  • FIG. 3A Step 1 First, the substrate layer 1 is manufactured.
  • the substrate layer of diamond crystals can be grown in a CVD apparatus.
  • FIG. 3B Step 2 Next, the hydrogen adsorption layer 12 is provided on the substrate layer 1.
  • the hydrogen adsorption layer 12 can be formed by irradiating the substrate layer 1 with hydrogen plasma.
  • FIG. 3A Step 1 First, the substrate layer 1 is manufactured.
  • the substrate layer of diamond crystals can be grown in a CVD apparatus.
  • FIG. 3B Step 2 Next, the hydrogen adsorption layer 12 is provided on the substrate layer 1.
  • Step 4 Next, the first insulating layer 2 is provided between the source electrode 8 and the drain electrode 9 so as to be in contact with the hydrogen adsorption layer 12 of the substrate layer 1.
  • the first insulating layer 2 can be provided by the first deposition step of depositing a material such as aluminum oxide (Al 2 O 3 ).
  • FIG. 3 (f) Step 6 Then, by providing the gate electrode 5 on the second insulating layer 4, the multilayer film structure 102 can be obtained.
  • the hydrogen adsorption layer forming step is a step of forming a hydrogen adsorption layer on the surface of the substrate layer 1 having a band gap of 3.0 electron volts or more.
  • the hydrogen adsorption layer can be formed, for example, by irradiating the substrate layer 1 with hydrogen plasma.
  • the first deposition step is preferably the first deposition step of depositing the member forming the first insulating layer.
  • the first deposition step is to deposit aluminum oxide (Al 2 O 3 ), and it is preferable that the sample temperature is 50 to 300 ° C. The temperature may be 100 to 250 ° C.
  • the forming step is selected from the group consisting of nitrogen dioxide (NO 2 ), nitric oxide (NO), sulfur dioxide (SO 2 ), and ozone (O 3 ) on the surface of the first insulating layer. It is preferable that the step is a forming step in which gas molecules are brought into contact with each other to form an adsorption layer.
  • the forming step is for adsorbing gas molecules, and the concentration of the gas molecular gas is preferably 0.2% or more.
  • the supply time of gas molecules is preferably 3 to 20 minutes.
  • the degree of vacuum is preferably 6.67 kPa to 26.7 kPa (50 to 200 torr).
  • the degree of vacuum is particularly preferably 14.7 kPa to 18.7 kPa (110 to 140 torr).
  • the sample temperature is preferably 50 to 200 ° C. in order to stabilize the gas molecules when they are adsorbed.
  • the second deposition step is to deposit a member forming the second insulating layer on the surface of the adsorption layer.
  • the second deposition step is for depositing aluminum oxide (Al 2 O 3 ), and it is preferable that the sample temperature is 50 to 200 ° C.
  • these hydrogen adsorption layer forming steps, the first deposition step, the forming step, and the second deposition step are performed in the same treatment tank, and the atmosphere thereof is a controlled atmosphere.
  • the atmosphere can be controlled by nitrogen substitution, vacuum, or the like. Conventionally, it has been considered preferable to carry out the deposition step in the atmosphere, but in the present invention, it can be carried out with nitrogen substitution or vacuum. Therefore, in the same tank as the treatment tank in which the hydrogen adsorption layer forming step was performed, the subsequent deposition step, formation step, etc. can be performed, the manufacturing process can be easily managed, and the one with excellent quality is stable. Can be manufactured.
  • Example 1 An example of producing a multilayer film structure corresponding to the multilayer film structure 102 of FIG. 3 will be described in the following steps.
  • the substrate layer 1 Kenzan diamond (registered trademark) manufactured by Adamant Namiki Precision Jewel Co., Ltd. was used.
  • the substrate layer 1 was irradiated with hydrogen plasma (represented by H) in the reactor of the microwave plasma CVD apparatus to form the hydrogen adsorption layer 12.
  • the hydrogen adsorption layer 12 was formed by leaving the microwave at a frequency of 2.45 GHz, an output of 750 W, a reaction pressure of 50 Torr (6.67 kPa), and a hydrogen supply amount of 300 cm for 10 minutes.
  • the source electrode 8 and the drain electrode 9 were formed by vacuum deposition.
  • the sample is supplied with trimethylaluminum and H 2 O alternately in vacuum by the atomic layer deposition (ALD) method, and the aluminum oxide layer (Al 2 O 3 film) is first insulated. It was deposited as layer 2.
  • ALD atomic layer deposition
  • NO 2 having a concentration of 2% was supplied to form the NO 2 adsorption layer 3.
  • the aluminum oxide layer (Al 2 O 3 film) was deposited again as the second insulating layer 4 by using the ALD method again.
  • an Au film to be the gate electrode layer 5 is deposited.
  • FIG. 6 shows an outline of a production example according to Example 1.
  • Al 2 O 3-8 nm @ 230 ° C.” it means that a layer of aluminum oxide is deposited at 230 ° C. by 8 nm.
  • NO 2 @ 80 ° C.” means that the NO 2 gas was adsorbed at 80 ° C.
  • Al 2 O 3-8 nm @ 80 ° C.” means that a layer of aluminum oxide was deposited at 80 ° C. by 8 nm.
  • FIGS. 7 and 8 show gates based on the sheet resistance (Sheet Resistance (k ⁇ / sq.)) Of the manufactured sample and the drain current (( IDS (mA / mm)) with respect to the drain voltage (output voltage (V DS (V))). The results of evaluating the voltage dependence are shown. These measurements were performed using a "B1505A power device analyzer / curve tracer" manufactured by KEYSIGHT TECHNOLOGIES.
  • FIG. 7 shows the results of examining the thickness and treatment temperature of the aluminum oxide layer as the first insulating layer.
  • the configurations shown in FIG. 6 were evaluated except for the changed conditions.
  • the first insulating layer had the lowest sheet resistance, especially at 8 nm.
  • FIG. 8 shows the results of examining the treatment temperature in the forming step of forming the NO 2 adsorption layer.
  • the temperature at which the NO 2 adsorption layer was formed was about 80 ° C.
  • the description of (80 ° C., 80 ° C.), (230 ° C., 80 ° C.), and (230 ° C., 230 ° C.) in the graph relates to the test conditions of each measurement point in the graph. ..
  • the left side in parentheses is the sample temperature when the first aluminum oxide layer (first Al 2 O 3 ) is deposited, and the right side in parentheses is the sample temperature when the second aluminum oxide layer (second Al 2 O 3 ) is deposited.
  • Sample temperature For example, in (80 ° C., 80 ° C.), the sample temperature at the time of depositing the first aluminum oxide layer is 80 ° C., and the sample temperature at the time of depositing the second aluminum oxide layer is 80 ° C.
  • FIG. 9 is a result of evaluating the gate voltage dependence of the multilayer film structure having the configuration shown on the left side of FIG. 9.
  • the temperature (X ° C.) is 80 ° C., 230 ° C., and 330 ° C. as the deposition condition of the first insulating layer.
  • the results of measuring the maximum drain current of the FET having a multilayer structure manufactured at these manufacturing temperatures are shown on the right side of FIG.
  • the multilayer film structure of the present invention can be used for electronic elements such as transistors and diodes, and is industrially useful.
  • Substrate layer 10 101, 102, 20, 201 Multilayer membrane structure 12 Hydrogen adsorption layer 2 First insulation layer 3 Adsorption layer 4 Second insulation layer 5 Gate electrode 8 Source electrode 9 Drain electrode

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JP2020047669A (ja) * 2018-09-14 2020-03-26 株式会社東芝 半導体装置、及び、半導体装置の製造方法

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