WO2022142712A1 - Unité de stockage magnétique et mémoire magnétique - Google Patents

Unité de stockage magnétique et mémoire magnétique Download PDF

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Publication number
WO2022142712A1
WO2022142712A1 PCT/CN2021/128170 CN2021128170W WO2022142712A1 WO 2022142712 A1 WO2022142712 A1 WO 2022142712A1 CN 2021128170 W CN2021128170 W CN 2021128170W WO 2022142712 A1 WO2022142712 A1 WO 2022142712A1
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WIPO (PCT)
Prior art keywords
layer
magnetic
metal
storage
unit
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PCT/CN2021/128170
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English (en)
Chinese (zh)
Inventor
韩谷昌
张恺烨
申力杰
杨晓蕾
刘波
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浙江驰拓科技有限公司
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Publication of WO2022142712A1 publication Critical patent/WO2022142712A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Definitions

  • the present invention relates to the technical field of storage, in particular to a magnetic storage unit and a magnetic memory.
  • STT-MRAM Current-read and write magnetic random access memory
  • STT-MRAM Current-read and write magnetic random access memory
  • magnetic random access memory has considerable storage capacity and read and write speed.
  • traditional memory has not faced, namely magnetic memory.
  • the data storage time is limited. For the consideration of data security, if the magnetic random access memory is to be put into use, the storage time of the memory needs to be further extended.
  • the size of the storage bit can be increased, and the physical diameter of the magnetic memory can be increased to reduce the storage density, thereby increasing the storage time.
  • this is not conducive to the miniaturization of the device, which is inconsistent with the current development trend of memory.
  • the multi-layer interface superposition is used to increase the bit thickness and increase the data retention time, but the multi-layer will bring new interface resistance problems, which will reduce the memory performance.
  • the purpose of the present invention is to provide a magnetic storage unit and a magnetic memory to solve the problems in the prior art that read and write performance, device volume and data storage time cannot be achieved simultaneously.
  • the present invention provides a magnetic storage unit, which includes a magnetic reference layer, a tunnel layer, a magnetic free layer and a cap layer in order from bottom to top;
  • the magnetic free layer includes a plurality of storage structural units
  • the storage structure unit sequentially includes a first ferromagnetic layer, a non-magnetic metal spacer layer, a second ferromagnetic layer and an oxide interface layer from bottom to top;
  • the sidewall of the magnetic free layer is covered with a high conductive layer, the upper edge of the high conductive layer is arranged in conductive contact with the cap layer, and the lower edge of the high conductive layer is not lower than the oxide interface of the first storage structure unit layer; wherein, the first storage structural unit is the storage structural unit closest to the tunnel layer;
  • the lower edge of the highly conductive layer is not in contact with the second ferromagnetic layer of the first memory structure unit.
  • the lower edge of the high-conductivity layer is not higher than the oxide interface layer of the second memory structure unit; wherein, the second memory structure unit is the second distance from the tunnel layer.
  • Two close storage units are provided.
  • the number of the storage structural units ranges from 2 to 5, inclusive.
  • the oxide interface layer has a thickness ranging from 0.5 nm to 1 nm, inclusive.
  • the highly conductive layer includes a metal copper layer, a metal tantalum layer, a metal ruthenium layer, a metal tungsten layer, a metal titanium layer, a metal aluminum layer, a metal molybdenum layer, a metal magnesium layer, At least one of a metal platinum layer, a metal gold layer or a metal nitride conductive layer.
  • the thickness of the non-magnetic metal spacer layer ranges from 0.1 nm to 0.5 nm, inclusive.
  • the preparation method of the magnetic storage unit includes:
  • the magnetic reference layer, the tunnel layer, the magnetic free layer and the cap layer are sequentially arranged on a preset substrate, and etched according to a preset pattern to obtain a columnar substrate;
  • An insulating protective layer is provided on the sidewall of the columnar base
  • the insulating protection layer is etched through the top layer through hole etching technology to form through holes; wherein, the staying surface of the through holes is not lower than the oxide interface layer of the first storage structure unit;
  • a highly conductive material is deposited into the through hole to form the highly conductive layer to obtain the magnetic memory unit.
  • the preparation method of the magnetic storage unit comprises:
  • the magnetic reference layer, the tunnel layer, the magnetic free layer and the cap layer are sequentially arranged on a preset substrate, and etched to a preset stop surface to obtain an etched body; wherein, the stop The surface is not lower than the oxide interface layer of the first memory structure unit;
  • the magnetic memory cell is obtained by performing secondary etching on the primary etched body on which the highly conductive layer has been deposited.
  • the resistivity of the oxide interface layer of the first memory structure unit is lower than the resistivity of other oxide interface layers in the magnetic free layer.
  • a magnetic memory comprising the magnetic storage unit according to any one of the above.
  • the magnetic storage unit provided by the present invention includes a magnetic reference layer, a tunnel layer, a magnetic free layer and a cap layer in sequence from bottom to top; the magnetic free layer includes a plurality of storage structure units; and the storage structure units sequentially include from bottom to top a first ferromagnetic layer, a non-magnetic metal spacer layer, a second ferromagnetic layer and an oxide interface layer; the sidewall of the magnetic free layer is covered with a high conductive layer, and the upper edge of the high conductive layer is conductive with the cap layer contact setting, the lower edge of the high conductivity layer is not lower than the oxide interface layer of the first storage structure unit; wherein, the first storage structure unit is the storage structure unit closest to the tunnel layer; the high conductivity The lower edge of the layer is not in contact with the second ferromagnetic layer of the first memory structure unit.
  • the present invention proposes a structure in which a plurality of storage structure units are repeatedly arranged to prolong the data storage time.
  • the magnetic free layer maintains vertical anisotropy through the anisotropy of the multi-layer interface, and the ferromagnetic properties of the multi-layer ferromagnetic layer Coupling stacking increases the thickness of the magnetic free layer, but does not significantly increase the size of the storage bit.
  • a contact arrangement is arranged on the periphery of the magnetic free layer.
  • the highly conductive layer forms an electrical short-circuit connection between the multi-layer storage structure units, reduces the ratio of the series resistance generated by stacking to the total resistance of the magnetic tunnel junction, reduces the total resistance of the magnetic tunnel junction, and maintains the high tunnel magnetic properties of the magnetic tunnel junction.
  • the resistance change rate greatly increases the data storage time.
  • the present invention also provides a magnetic memory with the above beneficial effects.
  • FIG. 1 is a schematic structural diagram of a specific implementation manner of a magnetic storage unit provided by the present invention.
  • FIG. 2 is a schematic flowchart of a specific embodiment of a method for preparing a magnetic memory cell provided by the present invention
  • FIG. 3 is a schematic flowchart of another specific embodiment of the method for preparing a magnetic memory cell provided by the present invention.
  • 4 to 5 are process flow diagrams of a method for preparing a magnetic memory cell provided by the present invention.
  • FIG. 6 is a schematic flowchart of another specific embodiment of the method for manufacturing a magnetic memory cell provided by the present invention.
  • the core of the present invention is to provide a magnetic memory cell, a schematic structural diagram of a specific implementation manner of which is shown in FIG. Free layer 300 and cap layer 400;
  • the magnetic free layer 300 includes a plurality of storage structure units 310;
  • the storage structure unit 310 includes a first ferromagnetic layer 314, a non-magnetic metal spacer layer 313, a second ferromagnetic layer 312 and an oxide interface layer 311 in sequence from bottom to top;
  • the sidewall of the magnetic free layer 300 is covered with a highly conductive layer 500 , the upper edge of the highly conductive layer 500 is arranged in conductive contact with the cap layer 400 , and the lower edge of the highly conductive layer 500 is not lower than the first storage structure
  • the lower edge of the high conductive layer 500 is not in contact with the second ferromagnetic layer 312 of the first memory structure unit 310.
  • each epitaxial layer in the present invention is a layer formed by deposition.
  • the lower edge of the high conductive layer 500 in the present invention may be in contact with the oxide interface layer 311 of the first memory structure unit 310 , but not lower than the oxide interface of the first memory structure unit 310 Layer 311.
  • the lower edge of the high conductive layer 500 is not higher than the oxide interface layer 311 of the second memory structure unit 310 ; Two nearest storage structure units 310 .
  • the lower the lower edge of the highly conductive layer 500 is, which means that the more structures of the magnetic free layer 300 covered by the highly conductive layer 500 are, the lower the total resistance of the magnetic free layer 300 is. memory performance.
  • the number of the storage structure units 310 ranges from 2 to 5, including the endpoint value, such as any one of 2.0, 3.0, or 5.0.
  • the corresponding selection can also be made according to the actual situation.
  • the thickness of the oxide interface layer 311 ranges from 0.5 nanometers to 1 nanometer, inclusive, such as any one of 0.50 nanometers, 0.79 nanometers, or 1.00 nanometers; the thickness of the oxide interface layer is thin enough to make the upper and lower two
  • the memory structure unit 310 forms a strong ferromagnetic coupling.
  • the oxide interface layer 311 is a magnesium oxide layer, of course, it can be changed to other oxide layers according to actual needs, such as aluminum oxide, silicon oxide, titanium oxide, magnesium aluminate, tantalum oxide, zirconium oxide, hydrated oxide layer Iron etc.
  • the highly conductive layer 500 is a metal copper layer or a tantalum nitride layer, of course, it can also be selected according to the actual situation.
  • the thickness of the non-magnetic metal spacer layer 313 ranges from 0.1 nm to 0.5 nm, inclusive, such as any one of 0.10 nm, 0.30 nm, or 0.50 nm.
  • the non-magnetic metal spacer layer 313 is a thin metal layer that absorbs boron.
  • the non-magnetic metal spacer layer 313 is any one of a metal molybdenum layer, a metal tantalum layer, a metal magnesium layer, a metal tungsten layer, a metal iridium layer, or a metal ruthenium layer.
  • a typical material of the non-magnetic metal spacer layer 313 is any one of Mo, Ta, W, Mg, Ir, and Ru.
  • an insulating protective layer 700 is further provided on the sidewall of the magnetic memory cell, and the insulating protective layer 700 is a silicon oxide layer and/or a silicon nitride layer.
  • the magnetic storage unit provided by the present invention includes a magnetic reference layer 100, a tunnel layer 200, a magnetic free layer 300 and a cap layer 400 in order from bottom to top; the magnetic free layer 300 includes a plurality of storage structure units 310; the storage structure The unit 310 sequentially includes a first ferromagnetic layer 314, a non-magnetic metal spacer layer 313, a second ferromagnetic layer 312 and an oxide interface layer 311 from bottom to top; the sidewall of the magnetic free layer 300 is covered with a high conductive layer 500, so The upper edge of the high conductive layer 500 is arranged in conductive contact with the cap layer 400, and the lower edge of the high conductive layer 500 is not lower than the oxide interface layer 311 of the first memory structure unit 310; wherein, the first memory The structure unit 310 is the memory structure unit 310 closest to the tunnel layer 200 ; the lower edge of the high conductive layer 500 is not in contact with the second ferromagnetic layer 312 of the first memory structure unit 310 .
  • the present invention proposes a structure in which a plurality of storage structure units 310 are repeatedly arranged to prolong the data storage time, and the magnetic free layer 300 maintains vertical anisotropy through the anisotropy of the multi-layer interface.
  • the ferromagnetic coupling stacking increases the thickness of the magnetic free layer 300, but does not significantly increase the size of the storage bit.
  • the magnetic free layer 300 The high-conductivity layer 500 is arranged in the peripheral contact, so that an electrical short-circuit connection is formed between the multi-layer storage structure units 310, the ratio of the series resistance generated by the stacking to the total resistance of the magnetic tunnel junction is reduced, the total resistance of the magnetic tunnel junction is reduced, and the magnetic properties are maintained.
  • the high tunnel magnetoresistance change rate of the tunnel junction greatly improves the data storage time.
  • the present invention also provides a method for preparing a magnetic storage unit, which is referred to as the specific embodiment 2.
  • the schematic flowchart of the method is shown in FIG. 2 , including:
  • S101 Disposing the magnetic reference layer 100 , the tunnel layer 200 , the magnetic free layer 300 and the cap layer 400 in sequence on a predetermined substrate, and etching according to a predetermined pattern to obtain a columnar substrate.
  • S102 Disposing an insulating protective layer 700 on the sidewall of the columnar base.
  • the insulating protection layer 700 is a silicon oxide layer and/or a silicon nitride layer.
  • the through hole 600 is a through hole 600 formed in the insulating protection layer 700 .
  • S104 deposit a highly conductive material into the through hole 600 to form the highly conductive layer 500 to obtain the magnetic memory cell.
  • FIG. 4 The schematic diagram of the structure after etching through the top through hole 600 in this specific embodiment is shown in FIG. 4 .
  • the entire structure of the magnetic storage unit is completed by a single etching (ie, the columnar substrate). , and then adding the insulating protection layer 700 and the high conductive layer 500 , the process is simple and the production efficiency is high.
  • the present invention also provides another method for preparing a magnetic storage unit, which is referred to as the specific embodiment 3.
  • the schematic flowchart of the method is shown in FIG. 3 , including:
  • S202 Perform surface deposition on the primary etched body to obtain a high conductive layer 500 disposed on the primary etched body.
  • FIG. 5 The schematic diagram of the structure after deposition is shown in FIG. 5 , the primary etching body is bounded by the stop surface 710 , the upper part of the stop surface 710 is the etched columnar structure, and the lower part is the unetched flat surface , in this step, a high-conductivity layer 500 is deposited on the whole of the primary etched body, and the high-conductivity layer 500 covers the top, the upper surface of the columnar structure and the flat surface where the stop surface 710 is located.
  • S203 Perform secondary etching on the primary etched body on which the highly conductive layer 500 has been deposited to obtain the magnetic memory cell.
  • the etching is generally a vertical downward etching
  • the highly conductive layer 500 located on the top of the columnar structure and the flat surface where the stop surface 710 is located will be etched, while the columnar structure side is etched.
  • the highly conductive layer 500 of the wall will remain, and the schematic diagram of the magnetic memory cell structure after etching is shown in FIG.
  • the diameter of the etched layer is slightly larger than that above, but this has no effect on the use.
  • the magnetic memory unit prepared in this specific embodiment has a smaller volume, which is more conducive to the miniaturization of the device.
  • the resistivity of the oxide interface layer 311 of the first memory structure unit 310 is lower than that of the magnetic free layer The resistivity of other oxide interfacial layers in .
  • the method for disposing the oxide interface layer 311 of the first memory structure unit 310 includes:
  • Oxygen doping is performed on the metal element layer to obtain the oxide interface layer 311 of the first memory structure unit 310 .
  • the metal oxide layer is doped with a metal element to obtain the oxide interface layer 311 of the first memory structure unit 310 .
  • the oxide interface layer 311 obtained by the above two methods has low oxygen content and high electrical conductivity, which greatly improves the process window when the high conductive layer 500 is provided, that is, improves the process fault tolerance and ensures that the magnetic free layer 300 overall low resistance.
  • other processes can also be selected according to actual needs, so that the resistivity of the oxide interface layer 311 obtained from the first memory structure unit 310 is lower than that of other oxide interface layers 311 , which is not repeated here.
  • the present invention also provides a magnetic memory, which includes the magnetic storage unit described in any of the above.
  • the magnetic storage unit provided by the present invention includes a magnetic reference layer 100, a tunnel layer 200, a magnetic free layer 300 and a cap layer 400 in order from bottom to top;
  • the magnetic free layer 300 includes a plurality of storage structure units 310;
  • the unit 310 sequentially includes a first ferromagnetic layer 314, a non-magnetic metal spacer layer 313, a second ferromagnetic layer 312 and an oxide interface layer 311 from bottom to top;
  • the sidewall of the magnetic free layer 300 is covered with a high conductive layer 500, so
  • the upper edge of the high conductive layer 500 is in conductive contact with the cap layer 400, and the lower edge of the high conductive layer 500 is not lower than the oxide interface layer 311 of the first memory structure unit 310;
  • the structure unit 310 is the memory structure unit 310 closest to the tunnel layer 200 ; the lower edge of the high
  • the present invention proposes a structure in which a plurality of storage structure units 310 are repeatedly arranged to prolong the data storage time.
  • the magnetic free layer maintains vertical anisotropy through the anisotropy of the multi-layer interface.
  • the magnetic coupling stacking increases the thickness of the magnetic free layer, but does not significantly increase the size of the storage bit.
  • a contact arrangement is placed on the periphery of the magnetic free layer.
  • the highly conductive layer is formed to form an electrical short-circuit connection between the multi-layer storage structure units, reduce the ratio of the series resistance generated by stacking to the total resistance of the magnetic tunnel junction, reduce the total resistance of the magnetic tunnel junction, and maintain the high tunneling of the magnetic tunnel junction.
  • the magnetoresistance change rate greatly increases the data storage time.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Une unité de stockage magnétique et une mémoire magnétique sont divulguées. L'unité de stockage magnétique comprend successivement, de bas en haut : une couche de référence magnétique, une couche tunnel, une couche libre magnétique et une couche de couverture, la couche libre magnétique comprenant une pluralité d'unités de structure de stockage ; chacune des unités de structure de stockage comprend successivement, de bas en haut, une première couche ferromagnétique, une couche d'espacement métallique non magnétique, une seconde couche ferromagnétique et une couche d'interface d'oxyde ; une paroi latérale de la couche libre magnétique est recouverte d'une couche hautement conductrice, un bord supérieur de la couche hautement conductrice est en contact conducteur avec la couche de couverture, et un bord inférieur de la couche hautement conductrice n'est pas inférieur à la couche d'interface d'oxyde d'une première unité de structure de stockage ; et le bord inférieur de la couche hautement conductrice n'est pas en contact avec la seconde couche ferromagnétique de la première unité de structure de stockage. Au moyen de la présente invention, des connexions de court-circuit parmi de multiples unités de structure de stockage sont réalisées, réduisant ainsi le rapport de résistance série générée par l'empilement à la résistance totale d'une jonction tunnel magnétique, réduisant la résistance totale de la jonction tunnel magnétique, et prolongeant la durée de stockage de données.
PCT/CN2021/128170 2020-12-29 2021-11-02 Unité de stockage magnétique et mémoire magnétique WO2022142712A1 (fr)

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Application Number Priority Date Filing Date Title
CN202011604390.5A CN114694705A (zh) 2020-12-29 2020-12-29 一种磁性存储单元及磁性存储器
CN202011604390.5 2020-12-29

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207925523U (zh) * 2017-12-08 2018-09-28 北京航空航天大学青岛研究院 存储器件及电子设备
US20200098499A1 (en) * 2018-09-25 2020-03-26 International Business Machines Corporation Magnetic tunnel junction with low series resistance
CN111162005A (zh) * 2018-11-08 2020-05-15 江苏鲁汶仪器有限公司 多层磁性隧道结刻蚀方法和mram器件
US20200217735A1 (en) * 2019-01-07 2020-07-09 International Business Machines Corporation Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors
CN111816760A (zh) * 2019-04-11 2020-10-23 上海磁宇信息科技有限公司 一种磁性随机存储器磁性存储单元及其形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207925523U (zh) * 2017-12-08 2018-09-28 北京航空航天大学青岛研究院 存储器件及电子设备
US20200098499A1 (en) * 2018-09-25 2020-03-26 International Business Machines Corporation Magnetic tunnel junction with low series resistance
CN111162005A (zh) * 2018-11-08 2020-05-15 江苏鲁汶仪器有限公司 多层磁性隧道结刻蚀方法和mram器件
US20200217735A1 (en) * 2019-01-07 2020-07-09 International Business Machines Corporation Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors
CN111816760A (zh) * 2019-04-11 2020-10-23 上海磁宇信息科技有限公司 一种磁性随机存储器磁性存储单元及其形成方法

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