WO2022142431A1 - Détecteur de panneau plat à rayonnement à double énergie, procédé de fabrication et système de détection - Google Patents

Détecteur de panneau plat à rayonnement à double énergie, procédé de fabrication et système de détection Download PDF

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WO2022142431A1
WO2022142431A1 PCT/CN2021/115945 CN2021115945W WO2022142431A1 WO 2022142431 A1 WO2022142431 A1 WO 2022142431A1 CN 2021115945 W CN2021115945 W CN 2021115945W WO 2022142431 A1 WO2022142431 A1 WO 2022142431A1
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energy
layer
dual
ray
photosensitive pixels
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PCT/CN2021/115945
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English (en)
Chinese (zh)
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韦小庆
李桂锋
金利波
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上海奕瑞光电子科技股份有限公司
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Publication of WO2022142431A1 publication Critical patent/WO2022142431A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing

Definitions

  • the invention relates to the technical field of X-ray detection, in particular to a dual-energy radiation flat panel detector, a preparation method and a detection system.
  • a complete radiation image chain mainly includes the following components: radiation source, object to be measured, radiation detector, rack and back-end display system.
  • the radiation source and the radiation detector are the two core components in the imaging chain, which play a crucial role in the imaging quality, and also determine whether the imaging system can meet the needs of certain specific scenarios.
  • a monochromatic ray source such as the ray generated by the synchrotron radiation source or the characteristic ray of the metal target
  • the detector to detect the diffracted ray, and then use the Bragg diffraction principle to analyze the to-be-measured ray.
  • the crystal structure of the material In the fields of medical imaging and industrial inspection, the rays emitted by the used ray sources are not monochromatic, but continuous broad-spectrum rays like the solar spectrum.
  • the energy spectrum information will change accordingly.
  • the material composition of the object to be tested can be analyzed.
  • spectrometers are expensive, even higher than commonly used radiation or flat panel detectors.
  • dual-energy radiation detectors are widely used in the industry to analyze the density and composition differences of substances in the object to be measured.
  • the dual-energy linear array security inspection machine combines X-ray fluoroscopy technology with dual-energy technology to analyze the density and atomic number of substances in luggage, thereby improving the detection rate of dangerous goods.
  • the dual-energy subtraction technology can selectively remove the attenuation information of bones or soft tissues in the body, obtain a diagnostic image of "separation of bone and flesh", and improve the detection rate and diagnostic accuracy of diseases.
  • This technology is used in Digital Radiography (digital X-ray photography) and Dual Energy CT (dual energy CT).
  • the traditional dual-energy radiation detector consists of two sets of detection systems.
  • the rays first pass through the scintillator of the first thin layer, and the X photons in the low energy band are absorbed by the first thin layer of scintillator and converted into visible light photons, and the generated visible light photons are subsequently It is detected by the first layer of photoelectric sensing array and gives a low-energy image; after the high-energy radiation passes through the first thin layer of scintillator and the first layer of photoelectric sensor array, it enters the second layer of scintillator and is converted The visible light photons are detected by the second-layer photoelectric sensing array to form a high-energy image.
  • the solutions described in the patent applications with publication numbers CN101937095B and CN111198397A.
  • This dual-energy radiation detector using two sets of detection systems will undoubtedly greatly increase the cost of the detector system, and cause the detector system to be complicated in structure and bulky.
  • the alignment accuracy of the upper and lower sets of detectors will also have a great impact on data analysis, and inaccurate alignment will often lead to measurement deviations, which in turn lead to reduced imaging quality.
  • the purpose of the present invention is to provide a dual-energy radiation flat panel detector, a preparation method thereof, and a detection system, which are used to solve the problem that the dual-energy radiation detector in the prior art consists of two It is composed of a set of detection systems, which increases the cost of the detector system, and has problems such as complex structure and large volume, which limit its application scenarios, and the alignment accuracy of the upper and lower sets of detectors will also have a great impact on data analysis. , inaccurate alignment often leads to measurement deviation, which in turn leads to problems such as image quality degradation.
  • the present invention provides a dual-energy radiation flat panel detector, which sequentially includes a first scintillator layer, a photoelectric sensor array, and a transparent substrate along the X-ray incident direction. , a ray filter layer and a second scintillator layer; wherein, the photoelectric sensor array layer includes alternately distributed first photosensitive pixels and second photosensitive pixels, and the first photosensitive pixels and the second photosensitive pixels have opposite photosensitive directions to respectively
  • the ray filtering layer is used for filtering low-energy X-rays and preventing the luminescence scattering of the second scintillator layer.
  • the thickness of the second scintillator layer is greater than the thickness of the first scintillator layer.
  • the ray filtering layer includes an optical fiber panel.
  • the transparent substrate includes a combination of one or more of PI material layers, ultra-thin glass and PET material layers.
  • the first photosensitive pixels and the second photosensitive pixels are arranged in an alternating array of rows and columns.
  • the first photosensitive pixel includes a photodiode with a transparent top electrode and an opaque bottom electrode and the second photosensitive pixel includes a photodiode with a transparent bottom electrode and an opaque top electrode, or the second photosensitive pixel includes a transparent top electrode and a transparent top electrode.
  • a photodiode with an opaque bottom electrode and a first photosensitive pixel includes a photodiode with a transparent bottom electrode and an opaque top electrode.
  • the present invention also provides a preparation method of a dual-energy radiation flat panel detector, comprising the steps of:
  • a photosensor array layer and a first scintillator layer are sequentially formed on the upper surface of the transparent substrate.
  • the photosensor array layer includes alternately distributed first photosensitive pixels and second photosensitive pixels.
  • the first photosensitive pixels and the second photosensitive pixels have Opposite photosensitive directions for low-energy X-ray imaging and high-energy X-ray imaging, respectively;
  • a second scintillator layer is integrated on the lower surface of the ray filtering layer
  • the upper surface of the radiation filtering layer and the lower surface of the transparent substrate are coupled together.
  • the present invention also provides a detection system, which includes the dual-energy radiation flat panel detector as described in any one of the above solutions.
  • the dual-energy radiation flat panel detector, preparation method and detection system of the present invention have the following beneficial effects: the improved structural design of the present invention uses a single-layer photoelectric sensor array to simultaneously acquire low-energy and high-energy dual-energy spectrum objects The low-energy rays are filtered through the ray filtering layer and the second scintillator layer is prevented from luminous scattering, thereby helping to improve the material resolution capability of the detector, improve the image quality, and improve the diagnostic accuracy.
  • the detection system based on the dual-energy radiation flat panel detector of the present invention greatly simplifies the structure and reduces the volume, which not only helps to reduce the cost of the system, but also increases the mobility and flexibility of the system. The scope of application is wider.
  • FIG. 1 shows a schematic structural diagram of a dual-energy radiation flat panel detector provided by the present invention.
  • FIG. 2 is a schematic diagram of the cross-sectional structure of FIG. 1 .
  • FIG. 3 is a schematic diagram showing the configuration of the photosensitive pixels of the photosensor array layer in the dual-energy radiation flat panel detector provided by the present invention.
  • the present invention provides a dual-energy radiation flat panel detector, which sequentially includes a first scintillator layer 11 , a photoelectric sensor array, and a transparent lining along the X-ray incident direction.
  • the photosensor array layer 12 includes alternately distributed first photosensitive pixels 121 and second photosensitive pixels 122, first photosensitive pixels 121 and second photosensitive pixels 121
  • the pixels 122 have opposite photosensitive directions for realizing low-energy X-ray imaging and high-energy X-ray imaging, respectively, and the ray filtering layer 14 is used for filtering low-energy X-rays and preventing the second scintillator layer 15 from scattering light.
  • the first scintillator layer 11 is used to absorb low-energy X-rays and convert the absorbed low-energy X-rays into visible light
  • the second scintillator layer 15 is used to absorb high-energy X-rays and convert the absorbed high-energy X-rays into visible light.
  • X-rays are converted into visible light
  • the first photosensitive pixel 121 and the second photosensitive pixel 122 are used to convert the visible light converted by the corresponding scintillator layer into electric charge and store it.
  • Storage the definitions of the first photosensitive pixel 121 and the second photosensitive pixel 122 can also be interchanged, and processed by the image processing device to output a low-energy X-ray image and a high-energy X-ray image at the same time.
  • the improved structural design of the present invention uses a single-layer photoelectric sensor array to simultaneously acquire low-energy and high-energy dual-energy spectral object images, and filters low-energy rays through a ray filtering layer and prevents the second scintillator layer from luminous scattering, thereby contributing to Improve the material resolution capability of the detector, improve the image quality, and improve the diagnostic accuracy.
  • the detection system based on the dual-energy radiation flat panel detector of the present invention greatly simplifies the structure and reduces the volume, which not only helps to reduce the cost of the system, but also increases the mobility and flexibility of the system. The scope of application is wider.
  • the first photosensitive pixel 121 and the second photosensitive pixel 122 both include TFT thin film transistors and photodiodes 128 , and the TFT transistors specifically include gate electrodes 123 and active layers 124 , source electrode 125 and drain electrode 126, the photodiode 128 of each photosensitive pixel can be connected to the drain electrode of the corresponding TFT thin film transistor, and a light shielding layer 127 is arranged above the TFT thin film transistor to block the light emitted by the scintillator Influence on the TFT active layer, the TFT thin film transistor and the light shielding layer 127 are spaced apart by an insulating material layer. Since the structures and principles of the TFT thin film transistor and the photodiode are well known to those skilled in the art, this will not be described in detail. It is important that adjacent photosensitive pixels have different photosensitive directions.
  • the first photosensitive pixels 121 and the second photosensitive pixels 122 are arranged in an alternating array of multiple rows and columns and are distributed in a checkerboard structure, and the pixel grayscales missing in the low-energy and high-energy pixels are The value can be replaced by the mean of the surrounding 4 pixels (the part marked by the dotted box) that are co-edged with it, and one image from a single exposure can be transformed into a low-energy image and a high-energy image.
  • the materials of the first scintillator layer 11 and the second scintillator layer 15 may be the same or different, and may be selected from, but not limited to, GOS (Gd 2 O 2 S), NaI (Tl), LaCl 3 (Ce) , CsI (Tl, Na), LaBr 3 (Ce), YAlO 3 (Ce), C S I, GOS (Tb, Pr, Ce, F), CaWO 4 , Gd 3 Ga 5 O 12 (Cr, Ce), One or more of Lu 2 Si 2 O 7 (Ce), CdWO 4 , BGO, Lu 2 SiO 5 (Ce), LuAlO 3 (Ce), YTaO 4 (Nb), but preferably the second scintillator
  • the thickness of the layer 15 is greater than the thickness of the first scintillator layer 11, that is, the first scintillator layer 11 has a relatively lower thickness to reduce the absorption of high-energy X-rays while absorbing low-energy X-rays,
  • the ray filter layer 14 can not only filter out some low-energy rays, but also can reduce the divergence angle of the visible light emitted by the second scintillator layer 15 and improve the resolution of high-energy images. Therefore, the material of the ray filter layer 14 is selected. Very important. Preferably, the material of the ray filtering layer 14 can be an optical fiber panel (Fiber Optic Plates, FOP for short), which has the advantages of high light transmission efficiency, small inter-stage coupling loss, clear and real image transmission, and optically zero thickness. Etc.
  • FOP Fiber Optic Plates
  • the transparent substrate 13 includes a combination of one or more of a PI (Polyimide, polyimide) material layer, an ultra-thin glass, and a PET (Polyethylene terephthalate, polyester) material layer, and its thickness may be 10 ⁇ m ⁇ 20 ⁇ m.
  • PI Polyimide, polyimide
  • PET Polyethylene terephthalate, polyester
  • the dual-energy radiation flat panel detector provided by the present invention can simultaneously acquire low-energy and high-energy dual-energy spectrum object images only by using a single-layer photoelectric sensor array. Compared with the traditional dual-energy radiation flat panel detector, its structure is greatly simplified. The volume can be greatly reduced, which makes it not only applicable to conventional operating environments, but also to various workplaces that require mobile operations, such as field hospitals, mobile security checkpoints, etc. Therefore, the present invention also provides a detection system, which includes the dual-energy radiation flat panel detector as described in any of the above solutions. For the introduction of the dual-energy radiation flat panel detector, please refer to the foregoing content, for The purpose of brevity is not repeated. Of course, the detection system also includes structures such as an image processing device.
  • the system structure can be greatly simplified, the volume can be greatly reduced, the system cost can be effectively reduced, and the applicability of the system can be improved.
  • the present invention also provides a preparation method of a dual-energy radiation flat panel detector, and the preparation method of the present invention can be used to prepare the dual-energy radiation flat panel detector as described in any of the above solutions, or in any of the foregoing solutions.
  • the dual-energy radiation flat-panel detector can be prepared based on this preparation method (of course, it can also be prepared based on other methods), so the aforementioned introduction to the dual-energy radiation flat-panel detector can be cited here in its entirety, and will not be repeated for the sake of brevity .
  • the preparation method comprises the steps:
  • a photosensor array layer and a first scintillator layer are sequentially formed on the upper surface of the transparent substrate.
  • the photosensor array layer includes alternately distributed first photosensitive pixels and second photosensitive pixels.
  • the first photosensitive pixels and the second photosensitive pixels have The opposite photosensitive directions are used to realize low-energy X-ray imaging and high-energy X-ray imaging respectively; for example, corresponding thin film structures can be formed step by step on a transparent substrate based on conventional semiconductor manufacturing processes to form corresponding TFT thin film transistors and photodiodes.
  • the first photosensitive pixel and the second photosensitive pixel are formed to form the photosensor array layer, and then the first scintillator layer is formed by vacuum evaporation or direct bonding process, for example, if the first scintillator layer is CS I and other materials can be directly evaporated in a vacuum evaporation furnace. If it is a material such as GOS, the first scintillator layer can be made into a film layer of a certain thickness, and then glued or glued to the film. on the photoelectric sensor array layer;
  • Integrate a second scintillator layer on the lower surface of the ray filtering layer for example, use a bonding process to form the second scintillator layer on the lower surface of the ray filtering layer, for example, use glue or glue film to attach the second scintillator layer Fitted to the lower surface of the ray filtering layer;
  • the upper surface of the ray filtering layer and the lower surface of the transparent substrate are coupled together, such as through optically transparent glue, which is not specifically limited. Since the high-energy pixels and the low-energy pixels are located in the same layer, there is no need to consider the problem of upper and lower alignment, so the fabrication process can be greatly simplified.
  • the present invention provides a dual-energy radiation flat panel detector, a method for manufacturing the same, and a detection system.
  • the dual-energy radiation flat panel detector sequentially includes a first scintillator layer, a photoelectric sensor array, a transparent substrate, a ray filtering layer and a second scintillator layer along the X-ray incident direction; wherein, the photoelectric sensor array layer includes The first photosensitive pixels and the second photosensitive pixels are alternately distributed, and the first photosensitive pixels and the second photosensitive pixels have opposite photosensitive directions for realizing low-energy X-ray imaging and high-energy X-ray imaging respectively, and the ray filtering layer is used for Filtering low-energy X-rays and preventing luminescence scattering of the second scintillator layer
  • the improved structural design of the present invention uses a single-layer photosensor array to simultaneously acquire images of low-energy and high-energy dual-energy spectral objects, and filters low-energy rays and The second scintillator is prevented from scattering light,
  • the detection system based on the dual-energy radiation flat panel detector of the present invention greatly simplifies the structure and reduces the volume, which not only helps to reduce the cost of the system, but also increases the mobility and flexibility of the system. The scope of application is wider. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)

Abstract

La présente invention concerne un détecteur de panneau plat à rayonnement à double énergie, son procédé de fabrication et un système de détection. Le détecteur comprend séquentiellement, dans une direction d'incidence de Rayons X, une première couche de scintillateur, un réseau de capteurs photoélectriques, un substrat transparent, une couche de filtrage de rayons et une seconde couche de scintillateur, la couche de réseau de capteurs photoélectriques comprenant des premiers pixels photosensibles et des seconds pixels photosensibles qui sont répartis en alternance, les premiers pixels photosensibles et les seconds pixels photosensibles ont des directions photosensibles opposées pour réaliser respectivement une imagerie par rayons X à faible énergie et une imagerie par rayons X à haute énergie, et la couche de filtrage de rayons est utilisée pour filtrer les rayons X à faible énergie et empêcher l'émission de lumière et la diffusion de la seconde couche de scintillateur. Dans la présente invention, un réseau de capteurs photoélectriques à couche unique est utilisé pour acquérir simultanément une énergie double, c'est-à-dire une faible énergie et une haute énergie, des images d'objet de spectre, et la couche de filtrage de rayons est utilisée pour filtrer des rayons à faible énergie et empêcher l'émission de lumière et la diffusion de la seconde couche de scintillateur, ce qui facilite l'amélioration de la capacité de résolution de matériau d'un détecteur, améliorant la qualité d'image et améliorant la précision de diagnostic. En outre, la structure est grandement simplifiée, et le volume peut être considérablement réduit, ce qui facilite la réduction du coût du système.
PCT/CN2021/115945 2020-12-30 2021-09-01 Détecteur de panneau plat à rayonnement à double énergie, procédé de fabrication et système de détection WO2022142431A1 (fr)

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CN202011611657.3 2020-12-30
CN202011611657.3A CN112713163A (zh) 2020-12-30 2020-12-30 双能辐射平板探测器、制备方法及探测系统

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