WO2022137380A1 - Plating device and plating treatment method - Google Patents

Plating device and plating treatment method Download PDF

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Publication number
WO2022137380A1
WO2022137380A1 PCT/JP2020/048113 JP2020048113W WO2022137380A1 WO 2022137380 A1 WO2022137380 A1 WO 2022137380A1 JP 2020048113 W JP2020048113 W JP 2020048113W WO 2022137380 A1 WO2022137380 A1 WO 2022137380A1
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WO
WIPO (PCT)
Prior art keywords
plating
moving
substrate
substrate holder
elevating
Prior art date
Application number
PCT/JP2020/048113
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French (fr)
Japanese (ja)
Inventor
正輝 富田
泰之 増田
Original Assignee
株式会社荏原製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社荏原製作所 filed Critical 株式会社荏原製作所
Priority to PCT/JP2020/048113 priority Critical patent/WO2022137380A1/en
Priority to JP2021520236A priority patent/JP6911220B1/en
Priority to US17/442,864 priority patent/US20220396895A1/en
Priority to CN202080027298.9A priority patent/CN114981484B/en
Priority to KR1020217033189A priority patent/KR102404458B1/en
Publication of WO2022137380A1 publication Critical patent/WO2022137380A1/en

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms

Definitions

  • This application relates to a plating apparatus and a plating processing method.
  • a cup-type electrolytic plating device is known as an example of a plating device.
  • a substrate for example, a semiconductor wafer held in a substrate holder with the surface to be plated facing downward is immersed in a plating solution, and a voltage is applied between the substrate and the anode to apply a substrate.
  • a conductive film is deposited on the surface of the above.
  • the inventors of the present application have found that the positional relationship between the axial center of the anode of the plating apparatus and the axial center of the substrate affects the profile of the plating film thickness. It is also important to adjust the positional relationship between the axis of the anode and the axis of the substrate, for example, in aligning the axes when assembling the plating apparatus. Furthermore, when starting a new plating process with a different type of substrate or type of plating solution, the axis of the anode and the axis of the substrate are aligned based on the tendency of the profile of the plating film thickness of the substrate in the plating process. Or, adjustments such as daring to shift the axis are required. In order to adjust the positional relationship between the axis of the anode and the axis of the substrate, it is important to easily adjust the position of the substrate holder that holds the substrate.
  • one purpose of the present application is to easily adjust the position of the board holder.
  • a plating tank for accommodating a plating solution, a substrate holder for holding a substrate with the surface to be plated facing the plating solution contained in the plating tank, and the substrate holder are provided.
  • a plating apparatus including an elevating mechanism for elevating and lowering and a moving mechanism for moving the substrate holder in a direction orthogonal to the elevating direction of the substrate holder is disclosed.
  • FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the present embodiment.
  • FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the present embodiment.
  • FIG. 3 is a vertical sectional view schematically showing the configuration of the plating module of the present embodiment.
  • FIG. 4 is a perspective view schematically showing the configuration of the plating module of the present embodiment.
  • FIG. 5 is a diagram showing a plating film thickness profile of the substrate when the position of the substrate holder in the X direction is adjusted.
  • FIG. 6 is a flowchart showing the plating processing method of the present embodiment.
  • FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the present embodiment.
  • FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the present embodiment.
  • the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, and a transfer device. It includes 700 and a control module 800.
  • the load port 100 is a module for carrying in a substrate stored in a cassette such as FOUP (not shown in the plating apparatus 1000) or for carrying out the substrate from the plating apparatus 1000 to the cassette.
  • the four load ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the load ports 100 are arbitrary.
  • the transport robot 110 is a robot for transporting the substrate, and is configured to transfer the substrate between the load port 100, the aligner 120, and the transport device 700. When the transfer robot 110 and the transfer device 700 transfer the substrate between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrate via a temporary stand (not shown).
  • the aligner 120 is a module for aligning the positions of the orientation flat and the notch of the substrate in a predetermined direction.
  • the two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary.
  • the pre-wet module 200 replaces the air inside the pattern formed on the surface of the substrate with the treatment liquid by wetting the surface to be plated of the substrate before the plating treatment with a treatment liquid such as pure water or degassed water.
  • the pre-wet module 200 is configured to perform a pre-wet treatment that facilitates supply of the plating liquid to the inside of the pattern by replacing the treatment liquid inside the pattern with the plating liquid at the time of plating.
  • the two pre-wet modules 200 are arranged side by side in the vertical direction, but the number and arrangement of the pre-wet modules 200 are arbitrary.
  • the pre-soak module 300 cleans the surface of the plating base by, for example, etching and removing an oxide film having a large electric resistance existing on the surface of the seed layer formed on the surface to be plated of the substrate before the plating treatment with a treatment liquid such as sulfuric acid or hydrochloric acid. Alternatively, it is configured to be subjected to a pre-soak treatment that activates it.
  • the two pre-soak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary.
  • the plating module 400 applies a plating process to the substrate. In the present embodiment, there are two sets of 12 plating modules 400 arranged three in the vertical direction and four in the horizontal direction, and a total of 24 plating modules 400 are provided. However, the plating module 400 is provided. The number and arrangement of are arbitrary.
  • the cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating process.
  • the two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary.
  • the spin rinse dryer 600 is a module for rotating the substrate after the cleaning treatment at high speed to dry it.
  • two spin rinse dryers are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers are arbitrary.
  • the transport device 700 is a device for transporting a substrate between a plurality of modules in the plating device 1000.
  • the control module 800 is configured to control a plurality of modules of the plating apparatus 1000, and can be configured from a general computer or a dedicated computer having an input / output interface with an operator, for example.
  • the board stored in the cassette is carried into the load port 100.
  • the transfer robot 110 takes out the board from the cassette of the load port 100 and transfers the board to the aligner 120.
  • the aligner 120 aligns the orientation flat, the notch, and the like of the substrate in a predetermined direction.
  • the transfer robot 110 transfers the substrate oriented by the aligner 120 to the transfer device 700.
  • the transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-wet module 200.
  • the pre-wet module 200 applies a pre-wet treatment to the substrate.
  • the transport device 700 transports the pre-wet-treated substrate to the pre-soak module 300.
  • the pre-soak module 300 applies a pre-soak treatment to the substrate.
  • the transport device 700 transports the pre-soaked substrate to the plating module 400.
  • the plating module 400 applies a plating process to the substrate.
  • the transport device 700 transports the plated substrate to the cleaning module 500.
  • the cleaning module 500 performs a cleaning process on the substrate.
  • the transport device 700 transports the cleaned substrate to the spin rinse dryer 600. In the spin rinse dryer 600, the substrate is dried.
  • the transfer device 700 transfers the dried substrate to the transfer robot 110.
  • the transfer robot 110 transfers the board received from the transfer device 700 to the cassette of the load port 100. Finally, the cassette containing the board is carried out from the load port 100.
  • FIG. 3 is a vertical sectional view schematically showing the configuration of the plating module of the present embodiment.
  • the plating module 400 includes a plating tank 410 for accommodating a plating solution.
  • the plating module 400 includes a membrane 420 that vertically separates the inside of the plating tank 410.
  • the inside of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by a membrane 420.
  • the cathode region 422 and the anode region 424 are each filled with a plating solution.
  • An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424.
  • a resistor 450 is arranged in the cathode region 422 so as to face the membrane 420.
  • the resistor 450 is a member for making the plating process uniform on the surface to be plated Wf—a of the substrate Wf, and is composed of a plate-shaped member having a large number of holes formed therein.
  • the plating module 400 may include a paddle (not shown) for stirring the plating solution on the upper part of the resistor 450.
  • the plating module 400 includes a sensor 455 for measuring the plating film thickness formed on the surface to be plated Wf—a of the substrate Wf by the plating process.
  • the sensor 455 is arranged in the center of the upper surface of the resistor 450, but the location is not limited to this, and the location of the sensor 455 is arbitrary.
  • the plating module 400 includes a substrate holder 440 for holding the substrate Wf with the surface to be plated Wf-a facing downward.
  • the board holder 440 includes a feeding contact for feeding power to the board Wf from a power source (not shown).
  • a shaft 442 is fixed to the upper surface of the board holder 440.
  • a holding member 448 for holding the substrate holder 440 is attached to the shaft 442.
  • the holding member 448 includes a horizontal holding table 444 for holding the substrate holder 440 via the shaft 442 and a vertical holding table 446 for holding the horizontal holding table 444.
  • the vertical holding base 446 is attached to the elevating linear guide 482 so as to be movable in the vertical direction.
  • the plating module 400 includes a rotation mechanism 460 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual rotation axis extending vertically around the center of the surface to be plated Wf-a.
  • the rotation mechanism 460 can be realized by a known mechanism such as a motor.
  • the pulley 462 is attached to the shaft 442, and the belt 464 is attached to the pulley 462.
  • the rotation mechanism 460 is configured to rotate the substrate holder 440 by rotating the shaft 442 via the belt 464 and the pulley 462.
  • the plating module 400 includes a tilting mechanism 470 for tilting the substrate holder 440.
  • the tilting mechanism 470 includes a cylinder 472 connected to the vertical holding table 446 via a rotating shaft, and a piston rod 474 connected to the horizontal holding table 444 via a rotating shaft.
  • the tilting mechanism 470 can adjust the angle of the substrate holder 440 by pushing and pulling the piston rod 474 with the cylinder 472.
  • the tilting mechanism 470 is not limited to the above configuration, and can be realized by a known mechanism such as a tilting mechanism.
  • the plating module 400 includes an elevating mechanism 480 for elevating and lowering the substrate holder 440 along the Z axis (vertical direction).
  • the elevating mechanism 480 includes an elevating linear guide 482 extending in the elevating direction and an elevating drive member 484 for moving the vertical holding base 446 in the vertical direction along the elevating linear guide 482.
  • the elevating drive member 484 can be realized by a known mechanism such as a motor.
  • the elevating mechanism 480 is configured to elevate the substrate holder 440 by moving the vertical holding table 446 in the vertical direction along the elevating linear guide 482.
  • the plating module 400 immerses the substrate Wf in the plating solution of the cathode region 422 using the elevating mechanism 480, and applies a voltage between the anode 430 and the substrate Wf to form a plated surface Wf-a of the substrate Wf. It is configured to be plated.
  • the plating module 400 includes a moving mechanism 490 for moving the board holder 440 in a direction orthogonal to the elevating direction of the board holder 440.
  • the moving mechanism 490 will be described.
  • FIG. 4 is a perspective view schematically showing the configuration of the plating module of the present embodiment.
  • the rotation mechanism 460, the tilting mechanism 470, the elevating mechanism 480, and the like are omitted for the sake of clarity.
  • the moving mechanism 490 includes a first moving mechanism 490-1 for moving the substrate holder 440 in a first direction (Y-axis direction) orthogonal to the elevating direction (Z-axis direction).
  • a second moving mechanism 490-2 for moving the board holder 440 in a second direction (X-axis direction) orthogonal to the elevating direction and the first direction is provided.
  • the first moving mechanism 490-1 includes a first linear guide 492 extending in the first direction, a first support base 493 provided on the first linear guide 492, and a first support base 493. Includes a first drive member 491 for moving along the first linear guide 492.
  • the second moving mechanism 490-2 includes a second linear guide 496 extending in the second direction, a second support base 497 provided on the second linear guide 496, and a second support base 497. Includes a second drive member 495 for moving along the second linear guide 496.
  • the first moving mechanism 490-1 and the second moving mechanism 490-2 can be realized by a known mechanism such as a linear motion guide.
  • the first moving mechanism 490-1 and the second moving mechanism 490-2 are arranged so as to be overlapped on the base 494.
  • the first moving mechanism 490-1 is arranged on the base 494
  • the second moving mechanism 490-2 is arranged on the first moving mechanism 490-1.
  • the elevating linear guide 482 is fixed on the second support base 497.
  • the arrangement of the first moving mechanism 490-1 and the second moving mechanism 490-2 may be interchanged. Only one of the first moving mechanism 490-1 and the second moving mechanism 490-2 may be provided.
  • the rotation mechanism 460, the tilt mechanism 470, the elevating mechanism 480, and the moving mechanism 490 can be controlled via the control module 800.
  • the plating module 400 of the present embodiment includes a moving mechanism 490, the board holder 440 can be easily moved in the directions (X-axis direction and Y-axis direction) orthogonal to the elevating direction (Z-axis direction) of the board holder 440. Can be made to. Therefore, the plating module 400 can easily adjust the position of the substrate holder 440.
  • the axis of the substrate holder 440 (the substrate Wf held by the substrate holder 440) when the plating module 400 is installed is due to the tolerance of each component and the assembly tolerance. And the axis of the anode 430, it is difficult to align.
  • the moving mechanism 490 moves the substrate holder 440 so as to align the axial center of the anode 430 with the axial center of the substrate Wf held by the substrate holder 440.
  • the board holder 440 can be moved in the X-axis direction and the Y-axis direction via the input interface included in the control module 800. Therefore, the plating module 400 of the present embodiment can easily align the axes in order to ensure the uniformity of the plating film thickness of the entire substrate.
  • the moving mechanism 490 of the plating module 400 of the present embodiment can be configured to move the substrate holder 440 based on the plating film thickness measured by the sensor 455. That is, for the purpose of improving the uniformity of the plating film thickness of the substrate Wf, for example, in order to finely adjust the film thickness of the outer edge portion of the substrate Wf, the distance between the anode 430 and the substrate Wf (distance in the Z direction). ) was known to be adjusted. However, if the distance between the anode 430 and the substrate Wf is increased, the distance between the substrate and the paddle also increases, and there is a concern that the stirring efficiency of the plating solution in the vicinity of the surface to be plated Wf-a will decrease. On the other hand, the inventors of the present application have found that the positional relationship between the axial center of the anode 430 and the axial center of the substrate Wf affects the profile of the plating film thickness.
  • FIG. 5 is a diagram showing a plating film thickness profile of the substrate when the position of the substrate holder in the X direction is adjusted.
  • the horizontal axis is the radius (mm) of the substrate Wf
  • the vertical axis is the plating film thickness (arbitrary unit).
  • the profile of the plating film thickness of 0.2, 0.4, 0.6, 1.0) is shown.
  • the film thickness of the substrate Wf changes especially at the outer edge portion.
  • the uniformity of the plating film thickness of the substrate Wf can be improved.
  • the position of the axis of the substrate holder 440 can be adjusted with respect to the axis of the anode 430, so that the distance between the substrate Wf and the paddle is not increased, that is, the stirring efficiency of the plating solution is reduced. It is possible to improve the uniformity of the plating film thickness without any problem.
  • the uniformity of the plating film thickness cannot be continuously guaranteed by aging of the plating module 400 or by changing the plating process. difficult. In this case, it is necessary to readjust the plating module 400 for maintenance work.
  • the axis on the board holder 440 (board Wf) side can be adjusted via the control module 800, the positions of the board holders 440 of the plurality of plating modules 400 are managed by parameters. Then, the position of the board holder 440 can be adjusted immediately.
  • FIG. 6 is a flowchart showing the plating processing method of the present embodiment.
  • the flowchart of FIG. 6 shows, as an example, a process at the time of installing the plating module 400.
  • the substrate holder 440 is moved in a direction orthogonal to the elevating direction of the substrate holder 440 using the moving mechanism 490 (first moving step 110). Specifically, in the first moving step 110, the substrate holder 440 aligns the axis of the anode 430 arranged inside the plating tank 410 with the axis of the substrate Wf held in the substrate holder 440. To move.
  • the first moving step 110 includes a first moving step for moving the substrate holder 440 in a first direction (X-axis direction) orthogonal to the elevating direction (Z-axis direction), and a first moving step for moving the substrate holder 440 in the elevating direction and the first.
  • the first movement step 110 includes a second movement step of moving in a second direction (Y-axis direction) orthogonal to the direction of.
  • the first movement step 110 can be executed, for example, by the operator inputting the movement amount of the board holder 440 in the X-axis direction and the Y-axis direction via the input interface of the control module 800. By the first moving step 110, the alignment of the substrate Wf and the anode 430 is completed.
  • the plating treatment method is to install the substrate Wf on the substrate holder 440 (step 120).
  • the substrate holder 440 is lowered into the plating tank 410 by using the elevating mechanism 480 (descent step 130).
  • the substrate holder 440 is rotated by using the rotation mechanism 460, and the substrate Wf held in the substrate holder 440 lowered into the plating tank 410 is subjected to the plating treatment (plating step). 140).
  • the plating film thickness formed on the surface to be plated Wf-a of the substrate Wf by the plating step 140 is measured (measurement step 150).
  • the plating film thickness can be measured using the sensor 455.
  • the substrate holder 440 is moved by using the moving mechanism 490 based on the plating film thickness measured by the measuring step 150 (second moving step 160).
  • the second moving step 160 shifts the axis of the substrate Wf in the X direction and / or the Y direction with respect to the axis of the anode 430, and places the substrate holder 440 in a place where the uniformity of the plating film thickness is highest. Can be moved.
  • the plating treatment method determines whether or not the plating treatment should be completed (determination step 170).
  • the determination step 170 determines whether or not the plating process should be completed based on, for example, whether a predetermined time has elapsed from the start of the plating process or whether a predetermined plating film thickness has been formed. be able to.
  • the plating process returns to the plating step 140 and repeats the process.
  • the processing is terminated.
  • the flowchart of FIG. 6 shows the processing at the time of installing the plating module 400, the axis alignment of the substrate Wf and the anode 430 (first moving step 110) was first executed, but the first moving step. 110 does not have to be executed.
  • the flowchart of FIG. 6 shows an example of moving the substrate holder 440 while performing the plating process (second moving step 160), but the present invention is not limited to this.
  • the plating module 400 can perform a plating process on a plurality of substrates by shifting the axis of the substrate Wf by a different amount with respect to the axis of the anode 430 as shown in FIG.
  • the plating module 400 can obtain a plurality of plating film thickness profiles, and by comparing these, the optimum movement amount can be obtained. In this case, the plating module 400 can move the substrate holder 440 to the substrate performing the same plating process based on the obtained optimum moving amount before the plating process.
  • a plating tank for accommodating a plating solution, a substrate holder for holding a substrate with the surface to be plated facing the plating solution contained in the plating tank, and the substrate holder.
  • a plating apparatus including an elevating mechanism for raising and lowering a substrate holder and a moving mechanism for moving the substrate holder in a direction orthogonal to the elevating direction of the substrate holder.
  • the moving mechanism includes a first moving mechanism for moving the substrate holder in a first direction orthogonal to the elevating direction, and the substrate holder in the elevating direction and the above-mentioned.
  • a plating apparatus comprising a second moving mechanism for moving in a second direction orthogonal to the first direction.
  • the first moving mechanism includes a first linear guide extending in the first direction, a first support base provided on the first linear guide, and the above-mentioned.
  • the second moving mechanism includes a first driving member for moving the first support base along the first linear guide, and the second moving mechanism includes a second linear guide extending in the second direction.
  • the moving mechanism 1 and the second moving mechanism are arranged so as to be overlapped on a base, and the elevating mechanism is attached to the first support or the second support and is an elevating linear guide extending in the elevating direction.
  • a plating apparatus including an elevating drive member for moving a holding member for holding the substrate holder along the elevating linear guide.
  • the moving mechanism is such that the axis of the anode arranged inside the plating tank and the axis of the substrate held by the substrate holder are aligned with the substrate holder.
  • a plating device that moves the
  • the present application further includes, as an embodiment, a sensor for measuring the plating film thickness formed on the surface to be plated of the substrate by the plating process, and the moving mechanism is the plating film measured by the sensor.
  • a plating apparatus configured to move the substrate holder based on thickness.
  • a plating apparatus including a plurality of plating modules including the plating tank, the substrate holder, the elevating mechanism, and the moving mechanism.
  • the substrate holder for holding the substrate with the surface to be plated facing the plating solution contained in the plating tank is moved in a direction orthogonal to the elevating direction of the substrate holder.
  • Plating includes a moving step, a lowering step of lowering the substrate holder into the plating tank, and a plating step of performing a plating process on the substrate held by the substrate holder lowered into the plating tank. Disclose the processing method.
  • the moving step includes a first moving step in which the substrate holder is moved in a first direction orthogonal to the elevating direction, and the substrate holder is moved in the elevating direction and the first.
  • a plating process method comprising a second moving step of moving in a second direction orthogonal to the direction of.
  • the substrate holder is such that the moving step aligns the axis of the anode arranged inside the plating tank with the axis of the substrate held by the substrate holder.
  • a plating process method comprising a first moving step of moving the.
  • the present application further includes, as an embodiment, a measurement step of measuring the plating film thickness formed on the surface to be plated of the substrate by the plating step, and the moving step is the plating measured by the measurement step.
  • a plating process method comprising a second moving step of moving the substrate holder based on film thickness.

Abstract

The present invention easily adjusts the position of a substrate holder.　A plating module 400 includes: a plating tank 410 for storing a plating fluid; a substrate holder 440 for holding a substrate Wf while a surface Wf-a to be plated faces the plating fluid stored in the plating tank 410; a raising/lowering mechanism 480 for raising/lowering the substrate holder 440; and a moving mechanism 490 for moving the substrate holder 440 in a direction perpendicular to the raising/lowering direction of the substrate holder 440.

Description

めっき装置、およびめっき処理方法Plating equipment and plating processing method
　本願は、めっき装置、およびめっき処理方法に関する。 This application relates to a plating apparatus and a plating processing method.
　めっき装置の一例としてカップ式の電解めっき装置が知られている。カップ式の電解めっき装置は、被めっき面を下方に向けて基板ホルダに保持された基板（例えば半導体ウェハ）をめっき液に浸漬させ、基板とアノードとの間に電圧を印加することによって、基板の表面に導電膜を析出させる。 A cup-type electrolytic plating device is known as an example of a plating device. In a cup-type electrolytic plating apparatus, a substrate (for example, a semiconductor wafer) held in a substrate holder with the surface to be plated facing downward is immersed in a plating solution, and a voltage is applied between the substrate and the anode to apply a substrate. A conductive film is deposited on the surface of the above.
　カップ式の電解めっき装置では、基板に形成されるめっき膜厚を基板全体で均一にすることが求められている。この点、例えば特許文献１には、アノードと基板との間に電界を遮蔽することができるリング状の遮蔽部材を配置することによって、基板の外縁部近傍における電流密度を低下させ、これにより基板の外縁部周辺に厚いめっき膜が形成されるのを抑制することが開示されている。 In cup-type electrolytic plating equipment, it is required to make the plating film thickness formed on the substrate uniform throughout the substrate. In this regard, for example, in Patent Document 1, by arranging a ring-shaped shielding member capable of shielding an electric field between the anode and the substrate, the current density in the vicinity of the outer edge portion of the substrate is lowered, thereby reducing the current density of the substrate. It is disclosed that it suppresses the formation of a thick plating film around the outer edge portion of the above.
特開２０１４－５１６９７号公報Japanese Unexamined Patent Publication No. 2014-51697
　しかしながら、遮蔽部材を配置するだけでは、基板全体のめっき膜厚を十分に均一化することができないおそれがあるので、めっき膜厚を均一化するための他の手法が求められる。 However, since there is a possibility that the plating film thickness of the entire substrate cannot be sufficiently made uniform only by arranging the shielding member, another method for making the plating film thickness uniform is required.
　この点、本願の発明者らは、めっき装置のアノードの軸心と基板の軸心との位置関係がめっき膜厚のプロファイルに影響を及ぼすことを見出した。また、アノードの軸心と基板の軸心との位置関係を調整することは、例えば、めっき装置を組み立てるときの軸心合わせにおいても重要である。さらに、基板の種類またはめっき液の種類などが異なる新たなめっきプロセスを開始するときには、そのめっきプロセスにおける基板のめっき膜厚のプロファイルの傾向に基づいて、アノードの軸心と基板の軸心を合わせたり、またはあえて軸心をずらせたりするなどの調整が求められる。アノードの軸心と基板の軸心との位置関係を調整するためには、基板を保持する基板ホルダの位置調整を容易に行うことが重要である。 In this regard, the inventors of the present application have found that the positional relationship between the axial center of the anode of the plating apparatus and the axial center of the substrate affects the profile of the plating film thickness. It is also important to adjust the positional relationship between the axis of the anode and the axis of the substrate, for example, in aligning the axes when assembling the plating apparatus. Furthermore, when starting a new plating process with a different type of substrate or type of plating solution, the axis of the anode and the axis of the substrate are aligned based on the tendency of the profile of the plating film thickness of the substrate in the plating process. Or, adjustments such as daring to shift the axis are required. In order to adjust the positional relationship between the axis of the anode and the axis of the substrate, it is important to easily adjust the position of the substrate holder that holds the substrate.
　そこで、本願は、基板ホルダの位置調整を容易に行うことを１つの目的としている。 Therefore, one purpose of the present application is to easily adjust the position of the board holder.
　一実施形態によれば、めっき液を収容するためのめっき槽と、前記めっき槽に収容されためっき液に被めっき面を向けた状態で基板を保持するための基板ホルダと、前記基板ホルダを昇降させるための昇降機構と、前記基板ホルダの昇降方向に直交する方向に前記基板ホルダを移動させるための移動機構と、を含む、めっき装置が開示される。 According to one embodiment, a plating tank for accommodating a plating solution, a substrate holder for holding a substrate with the surface to be plated facing the plating solution contained in the plating tank, and the substrate holder are provided. A plating apparatus including an elevating mechanism for elevating and lowering and a moving mechanism for moving the substrate holder in a direction orthogonal to the elevating direction of the substrate holder is disclosed.
図１は、本実施形態のめっき装置の全体構成を示す斜視図である。FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the present embodiment. 図２は、本実施形態のめっき装置の全体構成を示す平面図である。FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the present embodiment. 図３は、本実施形態のめっきモジュールの構成を概略的に示す縦断面図である。FIG. 3 is a vertical sectional view schematically showing the configuration of the plating module of the present embodiment. 図４は、本実施形態のめっきモジュールの構成を概略的に示す斜視図である。FIG. 4 is a perspective view schematically showing the configuration of the plating module of the present embodiment. 図５は、基板ホルダのＸ方向の位置を調整したときの基板のめっき膜厚プロファイルを示す図である。FIG. 5 is a diagram showing a plating film thickness profile of the substrate when the position of the substrate holder in the X direction is adjusted. 図６は、本実施形態のめっき処理方法を示すフローチャートである。FIG. 6 is a flowchart showing the plating processing method of the present embodiment.
　以下、本発明の実施形態について図面を参照して説明する。以下で説明する図面において、同一または相当する構成要素には、同一の符号を付して重複した説明を省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are designated by the same reference numerals and duplicated description will be omitted.
＜めっき装置の全体構成＞
　図１は、本実施形態のめっき装置の全体構成を示す斜視図である。図２は、本実施形態のめっき装置の全体構成を示す平面図である。図１、２に示すように、めっき装置１０００は、ロードポート１００、搬送ロボット１１０、アライナ１２０、プリウェットモジュール２００、プリソークモジュール３００、めっきモジュール４００、洗浄モジュール５００、スピンリンスドライヤ６００、搬送装置７００、および、制御モジュール８００を備える。 <Overall configuration of plating equipment>
FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the present embodiment. FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the present embodiment. As shown in FIGS. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, and a transfer device. It includes 700 and a control module 800.
　ロードポート１００は、めっき装置１０００に図示していないFOUPなどのカセットに収納された基板を搬入したり、めっき装置１０００からカセットに基板を搬出するためのモジュールである。本実施形態では４台のロードポート１００が水平方向に並べて配置されているが、ロードポート１００の数および配置は任意である。搬送ロボット１１０は、基板を搬送するためのロボットであり、ロードポート１００、アライナ１２０、および搬送装置７００の間で基板を受け渡すように構成される。搬送ロボット１１０および搬送装置７００は、搬送ロボット１１０と搬送装置７００との間で基板を受け渡す際には、図示していない仮置き台を介して基板の受け渡しを行うことができる。 The load port 100 is a module for carrying in a substrate stored in a cassette such as FOUP (not shown in the plating apparatus 1000) or for carrying out the substrate from the plating apparatus 1000 to the cassette. In the present embodiment, the four load ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transport robot 110 is a robot for transporting the substrate, and is configured to transfer the substrate between the load port 100, the aligner 120, and the transport device 700. When the transfer robot 110 and the transfer device 700 transfer the substrate between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrate via a temporary stand (not shown).
　アライナ１２０は、基板のオリエンテーションフラットやノッチなどの位置を所定の方向に合わせるためのモジュールである。本実施形態では２台のアライナ１２０が水平方向に並べて配置されているが、アライナ１２０の数および配置は任意である。プリウェットモジュール２００は、めっき処理前の基板の被めっき面を純水または脱気水などの処理液で濡らすことで、基板表面に形成されたパターン内部の空気を処理液に置換する。プリウェットモジュール２００は、めっき時にパターン内部の処理液をめっき液に置換することでパターン内部にめっき液を供給しやすくするプリウェット処理を施すように構成される。本実施形態では２台のプリウェットモジュール２００が上下方向に並べて配置されているが、プリウェットモジュール２００の数および配置は任意である。 The aligner 120 is a module for aligning the positions of the orientation flat and the notch of the substrate in a predetermined direction. In the present embodiment, the two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 replaces the air inside the pattern formed on the surface of the substrate with the treatment liquid by wetting the surface to be plated of the substrate before the plating treatment with a treatment liquid such as pure water or degassed water. The pre-wet module 200 is configured to perform a pre-wet treatment that facilitates supply of the plating liquid to the inside of the pattern by replacing the treatment liquid inside the pattern with the plating liquid at the time of plating. In the present embodiment, the two pre-wet modules 200 are arranged side by side in the vertical direction, but the number and arrangement of the pre-wet modules 200 are arbitrary.
　プリソークモジュール３００は、例えばめっき処理前の基板の被めっき面に形成したシード層表面等に存在する電気抵抗の大きい酸化膜を硫酸や塩酸などの処理液でエッチング除去してめっき下地表面を洗浄または活性化するプリソーク処理を施すように構成される。本実施形態では２台のプリソークモジュール３００が上下方向に並べて配置されているが、プリソークモジュール３００の数および配置は任意である。めっきモジュール４００は、基板にめっき処理を施す。本実施形態では、上下方向に３台かつ水平方向に４台並べて配置された１２台のめっきモジュール４００のセットが２つあり、合計２４台のめっきモジュール４００が設けられているが、めっきモジュール４００の数および配置は任意である。 The pre-soak module 300 cleans the surface of the plating base by, for example, etching and removing an oxide film having a large electric resistance existing on the surface of the seed layer formed on the surface to be plated of the substrate before the plating treatment with a treatment liquid such as sulfuric acid or hydrochloric acid. Alternatively, it is configured to be subjected to a pre-soak treatment that activates it. In the present embodiment, the two pre-soak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary. The plating module 400 applies a plating process to the substrate. In the present embodiment, there are two sets of 12 plating modules 400 arranged three in the vertical direction and four in the horizontal direction, and a total of 24 plating modules 400 are provided. However, the plating module 400 is provided. The number and arrangement of are arbitrary.
　洗浄モジュール５００は、めっき処理後の基板に残るめっき液等を除去するために基板に洗浄処理を施すように構成される。本実施形態では２台の洗浄モジュール５００が上下方向に並べて配置されているが、洗浄モジュール５００の数および配置は任意である。スピンリンスドライヤ６００は、洗浄処理後の基板を高速回転させて乾燥させるためのモジュールである。本実施形態では２台のスピンリンスドライヤが上下方向に並べて配置されているが、スピンリンスドライヤの数および配置は任意である。搬送装置７００は、めっき装置１０００内の複数のモジュール間で基板を搬送するための装置である。制御モジュール８００は、めっき装置１０００の複数のモジュールを制御するように構成され、例えばオペレータとの間の入出力インターフェースを備える一般的なコンピュータまたは専用コンピュータから構成することができる。 The cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating process. In the present embodiment, the two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for rotating the substrate after the cleaning treatment at high speed to dry it. In the present embodiment, two spin rinse dryers are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers are arbitrary. The transport device 700 is a device for transporting a substrate between a plurality of modules in the plating device 1000. The control module 800 is configured to control a plurality of modules of the plating apparatus 1000, and can be configured from a general computer or a dedicated computer having an input / output interface with an operator, for example.
　めっき装置１０００による一連のめっき処理の一例を説明する。まず、ロードポート１００にカセットに収納された基板が搬入される。続いて、搬送ロボット１１０は、ロードポート１００のカセットから基板を取り出し、アライナ１２０に基板を搬送する。アライナ１２０は、基板のオリエンテーションフラットやノッチなどの位置を所定の方向に合わせる。搬送ロボット１１０は、アライナ１２０で方向を合わせた基板を搬送装置７００へ受け渡す。 An example of a series of plating processes by the plating apparatus 1000 will be described. First, the board stored in the cassette is carried into the load port 100. Subsequently, the transfer robot 110 takes out the board from the cassette of the load port 100 and transfers the board to the aligner 120. The aligner 120 aligns the orientation flat, the notch, and the like of the substrate in a predetermined direction. The transfer robot 110 transfers the substrate oriented by the aligner 120 to the transfer device 700.
　搬送装置７００は、搬送ロボット１１０から受け取った基板をプリウェットモジュール２００へ搬送する。プリウェットモジュール２００は、基板にプリウェット処理を施す。搬送装置７００は、プリウェット処理が施された基板をプリソークモジュール３００へ搬送する。プリソークモジュール３００は、基板にプリソーク処理を施す。搬送装置７００は、プリソーク処理が施された基板をめっきモジュール４００へ搬送する。めっきモジュール４００は、基板にめっき処理を施す。 The transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-wet module 200. The pre-wet module 200 applies a pre-wet treatment to the substrate. The transport device 700 transports the pre-wet-treated substrate to the pre-soak module 300. The pre-soak module 300 applies a pre-soak treatment to the substrate. The transport device 700 transports the pre-soaked substrate to the plating module 400. The plating module 400 applies a plating process to the substrate.
　搬送装置７００は、めっき処理が施された基板を洗浄モジュール５００へ搬送する。洗浄モジュール５００は、基板に洗浄処理を施す。搬送装置７００は、洗浄処理が施された基板をスピンリンスドライヤ６００へ搬送する。スピンリンスドライヤ６００は、基板に乾燥処理を施す。搬送装置７００は、乾燥処理が施された基板を搬送ロボット１１０へ受け渡す。搬送ロボット１１０は、搬送装置７００から受け取った基板をロードポート１００のカセットへ搬送する。最後に、ロードポート１００から基板を収納したカセットが搬出される。 The transport device 700 transports the plated substrate to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transport device 700 transports the cleaned substrate to the spin rinse dryer 600. In the spin rinse dryer 600, the substrate is dried. The transfer device 700 transfers the dried substrate to the transfer robot 110. The transfer robot 110 transfers the board received from the transfer device 700 to the cassette of the load port 100. Finally, the cassette containing the board is carried out from the load port 100.
　＜めっきモジュールの構成＞
　次に、めっきモジュール４００の構成を説明する。本実施形態における２４台のめっきモジュール４００は同一の構成であるので、１台のめっきモジュール４００のみを説明する。図３は、本実施形態のめっきモジュールの構成を概略的に示す縦断面図である。図３に示すように、めっきモジュール４００は、めっき液を収容するためのめっき槽４１０を備える。めっきモジュール４００は、めっき槽４１０の内部を上下方向に隔てるメンブレン４２０を備える。めっき槽４１０の内部はメンブレン４２０によってカソード領域４２２とアノード領域４２４に仕切られる。カソード領域４２２とアノード領域４２４にはそれぞれめっき液が充填される。アノード領域４２４のめっき槽４１０の底面にはアノード４３０が設けられる。カソード領域４２２にはメンブレン４２０に対向して抵抗体４５０が配置される。抵抗体４５０は、基板Ｗｆの被めっき面Ｗｆ－ａにおけるめっき処理の均一化を図るための部材であり、多数の孔が形成された板状部材によって構成される。めっきモジュール４００は、抵抗体４５０の上部に、めっき液を攪拌するための図示していないパドルを含んでいてもよい。また、めっきモジュール４００は、めっき処理によって基板Ｗｆの被めっき面Ｗｆ－ａに形成されためっき膜厚を計測するためのセンサ４５５を備える。本実施形態では、センサ４５５は、抵抗体４５０の上面の中央に配置されるが、これに限らず、センサ４５５の配置場所は任意である。 <Plating module configuration>
Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. FIG. 3 is a vertical sectional view schematically showing the configuration of the plating module of the present embodiment. As shown in FIG. 3, the plating module 400 includes a plating tank 410 for accommodating a plating solution. The plating module 400 includes a membrane 420 that vertically separates the inside of the plating tank 410. The inside of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by a membrane 420. The cathode region 422 and the anode region 424 are each filled with a plating solution. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424. A resistor 450 is arranged in the cathode region 422 so as to face the membrane 420. The resistor 450 is a member for making the plating process uniform on the surface to be plated Wf—a of the substrate Wf, and is composed of a plate-shaped member having a large number of holes formed therein. The plating module 400 may include a paddle (not shown) for stirring the plating solution on the upper part of the resistor 450. Further, the plating module 400 includes a sensor 455 for measuring the plating film thickness formed on the surface to be plated Wf—a of the substrate Wf by the plating process. In the present embodiment, the sensor 455 is arranged in the center of the upper surface of the resistor 450, but the location is not limited to this, and the location of the sensor 455 is arbitrary.
　また、めっきモジュール４００は、被めっき面Ｗｆ－ａを下方に向けた状態で基板Ｗｆを保持するための基板ホルダ４４０を備える。基板ホルダ４４０は、図示していない電源から基板Ｗｆに給電するための給電接点を備える。基板ホルダ４４０の上面にはシャフト４４２が固定されている。シャフト４４２には、基板ホルダ４４０を保持するための保持部材４４８が取り付けられている。保持部材４４８は、シャフト４４２を介して基板ホルダ４４０を保持するための水平保持台４４４と、水平保持台４４４を保持するための垂直保持台４４６と、を含む。垂直保持台４４６は昇降リニアガイド４８２に上下方向に移動可能に取り付けられている。 Further, the plating module 400 includes a substrate holder 440 for holding the substrate Wf with the surface to be plated Wf-a facing downward. The board holder 440 includes a feeding contact for feeding power to the board Wf from a power source (not shown). A shaft 442 is fixed to the upper surface of the board holder 440. A holding member 448 for holding the substrate holder 440 is attached to the shaft 442. The holding member 448 includes a horizontal holding table 444 for holding the substrate holder 440 via the shaft 442 and a vertical holding table 446 for holding the horizontal holding table 444. The vertical holding base 446 is attached to the elevating linear guide 482 so as to be movable in the vertical direction.
　めっきモジュール４００は、被めっき面Ｗｆ－ａの中央を垂直に伸びる仮想的な回転軸周りに基板Ｗｆが回転するように基板ホルダ４４０を回転させるための回転機構４６０を備える。回転機構４６０は、例えばモータなどの公知の機構によって実現することができる。本実施形態では、シャフト４４２にプーリ４６２が取り付けられており、プーリ４６２にはベルト４６４が取り付けられている。回転機構４６０は、ベルト４６４およびプーリ４６２を介してシャフト４４２を回転させることによって基板ホルダ４４０を回転させるように構成される。 The plating module 400 includes a rotation mechanism 460 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual rotation axis extending vertically around the center of the surface to be plated Wf-a. The rotation mechanism 460 can be realized by a known mechanism such as a motor. In the present embodiment, the pulley 462 is attached to the shaft 442, and the belt 464 is attached to the pulley 462. The rotation mechanism 460 is configured to rotate the substrate holder 440 by rotating the shaft 442 via the belt 464 and the pulley 462.
　また、めっきモジュール４００は、基板ホルダ４４０を傾斜させるための傾斜機構４７０を備える。本実施形態では、傾斜機構４７０は、垂直保持台４４６に回転軸を介して接続されたシリンダ４７２と、水平保持台４４４に回転軸を介して接続されたピストンロッド４７４と、を含む。傾斜機構４７０は、シリンダ４７２によってピストンロッド４７４を押し引きすることによって基板ホルダ４４０の角度を調整することができる。傾斜機構４７０は、上記の構成に限定されず、チルト機構などの公知の機構によって実現することができる。 Further, the plating module 400 includes a tilting mechanism 470 for tilting the substrate holder 440. In the present embodiment, the tilting mechanism 470 includes a cylinder 472 connected to the vertical holding table 446 via a rotating shaft, and a piston rod 474 connected to the horizontal holding table 444 via a rotating shaft. The tilting mechanism 470 can adjust the angle of the substrate holder 440 by pushing and pulling the piston rod 474 with the cylinder 472. The tilting mechanism 470 is not limited to the above configuration, and can be realized by a known mechanism such as a tilting mechanism.
　めっきモジュール４００は、基板ホルダ４４０をＺ軸（鉛直方向）に沿って昇降させるための昇降機構４８０を備える。本実施形態では、昇降機構４８０は、昇降方向に伸びる昇降リニアガイド４８２と、垂直保持台４４６を昇降リニアガイド４８２に沿って上下方向に移動させるための昇降駆動部材４８４と、を含む。昇降駆動部材４８４は、例えばモータなどの公知の機構によって実現することができる。昇降機構４８０は、垂直保持台４４６を昇降リニアガイド４８２に沿って上下方向に移動させることによって基板ホルダ４４０を昇降させるように構成される。めっきモジュール４００は、昇降機構４８０を用いて基板Ｗｆをカソード領域４２２のめっき液に浸漬し、アノード４３０と基板Ｗｆとの間に電圧を印加することによって、基板Ｗｆの被めっき面Ｗｆ－ａにめっき処理を施すように構成される。 The plating module 400 includes an elevating mechanism 480 for elevating and lowering the substrate holder 440 along the Z axis (vertical direction). In the present embodiment, the elevating mechanism 480 includes an elevating linear guide 482 extending in the elevating direction and an elevating drive member 484 for moving the vertical holding base 446 in the vertical direction along the elevating linear guide 482. The elevating drive member 484 can be realized by a known mechanism such as a motor. The elevating mechanism 480 is configured to elevate the substrate holder 440 by moving the vertical holding table 446 in the vertical direction along the elevating linear guide 482. The plating module 400 immerses the substrate Wf in the plating solution of the cathode region 422 using the elevating mechanism 480, and applies a voltage between the anode 430 and the substrate Wf to form a plated surface Wf-a of the substrate Wf. It is configured to be plated.
　めっきモジュール４００は、基板ホルダ４４０の昇降方向に直交する方向に基板ホルダ４４０を移動させるための移動機構４９０を備える。以下、移動機構４９０について説明する。図４は、本実施形態のめっきモジュールの構成を概略的に示す斜視図である。図４においては図示の明瞭化のために、回転機構４６０、傾斜機構４７０、および昇降機構４８０などを省略している。 The plating module 400 includes a moving mechanism 490 for moving the board holder 440 in a direction orthogonal to the elevating direction of the board holder 440. Hereinafter, the moving mechanism 490 will be described. FIG. 4 is a perspective view schematically showing the configuration of the plating module of the present embodiment. In FIG. 4, the rotation mechanism 460, the tilting mechanism 470, the elevating mechanism 480, and the like are omitted for the sake of clarity.
　図４に示すように、移動機構４９０は、基板ホルダ４４０を昇降方向（Ｚ軸方向）に直交する第１の方向（Ｙ軸方向）に移動させるための第１の移動機構４９０－１と、基板ホルダ４４０を昇降方向および第１の方向に直交する第２の方向（Ｘ軸方向）に移動させるための第２の移動機構４９０－２と、を備える。 As shown in FIG. 4, the moving mechanism 490 includes a first moving mechanism 490-1 for moving the substrate holder 440 in a first direction (Y-axis direction) orthogonal to the elevating direction (Z-axis direction). A second moving mechanism 490-2 for moving the board holder 440 in a second direction (X-axis direction) orthogonal to the elevating direction and the first direction is provided.
　第１の移動機構４９０－１は、第１の方向に伸びる第１のリニアガイド４９２と、第１のリニアガイド４９２上に設けられた第１の支持台４９３と、第１の支持台４９３を第１のリニアガイド４９２に沿って移動させるための第１の駆動部材４９１と、を含む。第２の移動機構４９０－２は、第２の方向に伸びる第２のリニアガイド４９６と、第２のリニアガイド４９６上に設けられた第２の支持台４９７と、第２の支持台４９７を第２のリニアガイド４９６に沿って移動させるための第２の駆動部材４９５と、を含む。第１の移動機構４９０－１および第２の移動機構４９０－２は、例えば直動ガイドなどの公知の機構によって実現することができる。 The first moving mechanism 490-1 includes a first linear guide 492 extending in the first direction, a first support base 493 provided on the first linear guide 492, and a first support base 493. Includes a first drive member 491 for moving along the first linear guide 492. The second moving mechanism 490-2 includes a second linear guide 496 extending in the second direction, a second support base 497 provided on the second linear guide 496, and a second support base 497. Includes a second drive member 495 for moving along the second linear guide 496. The first moving mechanism 490-1 and the second moving mechanism 490-2 can be realized by a known mechanism such as a linear motion guide.
　第１の移動機構４９０－１および第２の移動機構４９０－２は、基台４９４上に重ねて配置される。本実施形態では、基台４９４上に第１の移動機構４９０－１が配置され、第１の移動機構４９０－１上に第２の移動機構４９０－２が配置されている。昇降リニアガイド４８２は、第２の支持台４９７上に固定される。なお、第１の移動機構４９０－１と第２の移動機構４９０－２の配置は入れ替えてもよい。第１の移動機構４９０－１と第２の移動機構４９０－２のいずれか一方のみを設けてもよい。回転機構４６０、傾斜機構４７０、昇降機構４８０、および移動機構４９０は、制御モジュール８００を介して制御することができる。 The first moving mechanism 490-1 and the second moving mechanism 490-2 are arranged so as to be overlapped on the base 494. In the present embodiment, the first moving mechanism 490-1 is arranged on the base 494, and the second moving mechanism 490-2 is arranged on the first moving mechanism 490-1. The elevating linear guide 482 is fixed on the second support base 497. The arrangement of the first moving mechanism 490-1 and the second moving mechanism 490-2 may be interchanged. Only one of the first moving mechanism 490-1 and the second moving mechanism 490-2 may be provided. The rotation mechanism 460, the tilt mechanism 470, the elevating mechanism 480, and the moving mechanism 490 can be controlled via the control module 800.
　本実施形態のめっきモジュール４００は、移動機構４９０を備えているため、基板ホルダ４４０の昇降方向（Ｚ軸方向）に直交する方向（Ｘ軸方向およびＹ軸方向）に基板ホルダ４４０を容易に移動させることができる。したがって、めっきモジュール４００は、基板ホルダ４４０の位置調整を容易に行うことができる。例えば、めっきモジュール４００は大型の装置であり、部品点数も多いため、各部品の公差および組み立て公差により、めっきモジュール４００設置時に、基板ホルダ４４０（基板ホルダ４４０に保持される基板Ｗｆ）の軸心と、アノード４３０の軸心と、を位置合わせするのに困難が伴う。この点、本実施形態のめっきモジュール４００によれば、移動機構４９０は、アノード４３０の軸心と、基板ホルダ４４０に保持された基板Ｗｆの軸心と、を合わせるように基板ホルダ４４０を移動させることができる。例えば制御モジュール８００に含まれる入力インターフェースを介して基板ホルダ４４０をＸ軸方向およびＹ軸方向に移動させることができる。したがって、本実施形態のめっきモジュール４００は、めっき膜厚の基板全体の均一性を担保するために、容易に軸心合わせを行うことができる。 Since the plating module 400 of the present embodiment includes a moving mechanism 490, the board holder 440 can be easily moved in the directions (X-axis direction and Y-axis direction) orthogonal to the elevating direction (Z-axis direction) of the board holder 440. Can be made to. Therefore, the plating module 400 can easily adjust the position of the substrate holder 440. For example, since the plating module 400 is a large device and has a large number of parts, the axis of the substrate holder 440 (the substrate Wf held by the substrate holder 440) when the plating module 400 is installed is due to the tolerance of each component and the assembly tolerance. And the axis of the anode 430, it is difficult to align. In this regard, according to the plating module 400 of the present embodiment, the moving mechanism 490 moves the substrate holder 440 so as to align the axial center of the anode 430 with the axial center of the substrate Wf held by the substrate holder 440. be able to. For example, the board holder 440 can be moved in the X-axis direction and the Y-axis direction via the input interface included in the control module 800. Therefore, the plating module 400 of the present embodiment can easily align the axes in order to ensure the uniformity of the plating film thickness of the entire substrate.
　特に、本実施形態のめっき装置１０００のように、複数（２４台）のめっきモジュール４００を含んでいる場合、各めっきモジュール４００について基板ホルダ４４０とアノード４３０の軸心合わせを行うには多大な労力がかかる。この点、本実施形態のように移動機構４９０を備えていれば、複数のめっきモジュール４００について容易に軸心合わせを行うことができる。 In particular, when a plurality of (24 units) plating modules 400 are included as in the plating apparatus 1000 of the present embodiment, a great deal of labor is required to align the axes of the substrate holder 440 and the anode 430 for each plating module 400. It takes. In this respect, if the moving mechanism 490 is provided as in the present embodiment, it is possible to easily align the axes of the plurality of plating modules 400.
　また、本実施形態のめっきモジュール４００の移動機構４９０は、センサ４５５によって計測されためっき膜厚に基づいて基板ホルダ４４０を移動させるように構成することができる。すなわち、基板Ｗｆのめっき膜厚の均一性を向上させることを目的として、例えば基板Ｗｆの外縁部の膜厚を微調整するために、アノード４３０と基板Ｗｆとの間の距離（Ｚ方向の距離）を調整することは知られていた。しかしながら、アノード４３０と基板Ｗｆとの間の距離を離すと、基板とパドルとの距離も大きくなり、被めっき面Ｗｆ－ａ近傍のめっき液の撹拌効率が落ちることが懸念される。これに対して、本願の発明者らは、アノード４３０の軸心と基板Ｗｆの軸心との位置関係がめっき膜厚のプロファイルに影響を及ぼすことを見出した。 Further, the moving mechanism 490 of the plating module 400 of the present embodiment can be configured to move the substrate holder 440 based on the plating film thickness measured by the sensor 455. That is, for the purpose of improving the uniformity of the plating film thickness of the substrate Wf, for example, in order to finely adjust the film thickness of the outer edge portion of the substrate Wf, the distance between the anode 430 and the substrate Wf (distance in the Z direction). ) Was known to be adjusted. However, if the distance between the anode 430 and the substrate Wf is increased, the distance between the substrate and the paddle also increases, and there is a concern that the stirring efficiency of the plating solution in the vicinity of the surface to be plated Wf-a will decrease. On the other hand, the inventors of the present application have found that the positional relationship between the axial center of the anode 430 and the axial center of the substrate Wf affects the profile of the plating film thickness.
　図５は、基板ホルダのＸ方向の位置を調整したときの基板のめっき膜厚プロファイルを示す図である。図５において、横軸は基板Ｗｆの半径（ｍｍ）であり、縦軸はめっき膜厚（任意単位）である。図５は、基板Ｗｆの軸心とアノード４３０の軸心とを位置合わせした場合（Ｘ＝０）と、基板Ｗｆの軸心をアノード４３０の軸心に対してＸ方向にずらせた場合（Ｘ＝０．２、０．４、０．６、１．０）のめっき膜厚のプロファイルを示している。 FIG. 5 is a diagram showing a plating film thickness profile of the substrate when the position of the substrate holder in the X direction is adjusted. In FIG. 5, the horizontal axis is the radius (mm) of the substrate Wf, and the vertical axis is the plating film thickness (arbitrary unit). FIG. 5 shows a case where the axis of the substrate Wf and the axis of the anode 430 are aligned (X = 0) and a case where the axis of the substrate Wf is shifted in the X direction with respect to the axis of the anode 430 (X). The profile of the plating film thickness of = 0.2, 0.4, 0.6, 1.0) is shown.
　図５に示すように、基板Ｗｆの軸心をアノード４３０の軸心に対してＸ方向にあえてずらせると、基板Ｗｆの膜厚は特に外縁部において変化する。本実施形態では、基板Ｗｆの軸心をアノード４３０の軸心に対して０．６ｍｍずらしてめっき処理を行うと、基板Ｗｆのめっき膜厚の均一性を向上させることができた。本実施形態によれば、基板ホルダ４４０の軸心をアノード４３０の軸心に対して位置調整することができるので、基板Ｗｆとパドルとの距離を離すことなく、つまりめっき液の攪拌効率を落とすことなく、めっき膜厚の均一性を向上させることができる。 As shown in FIG. 5, when the axis of the substrate Wf is intentionally shifted in the X direction with respect to the axis of the anode 430, the film thickness of the substrate Wf changes especially at the outer edge portion. In the present embodiment, when the plating process is performed by shifting the axis of the substrate Wf by 0.6 mm with respect to the axis of the anode 430, the uniformity of the plating film thickness of the substrate Wf can be improved. According to this embodiment, the position of the axis of the substrate holder 440 can be adjusted with respect to the axis of the anode 430, so that the distance between the substrate Wf and the paddle is not increased, that is, the stirring efficiency of the plating solution is reduced. It is possible to improve the uniformity of the plating film thickness without any problem.
　なお、めっき膜厚の均一性が向上するように初期設定をしたとしても、めっきモジュール４００の経年変化、または、めっきプロセスの変更などによって、めっき膜厚の均一性を継続して担保させることは難しい。この場合、メンテナンス作業でめっきモジュール４００の再調整作業が必要になる。この点、本実施形態によれば、制御モジュール８００を介して基板ホルダ４４０(基板Ｗｆ)側の軸心を調整することができるので、複数のめっきモジュール４００の基板ホルダ４４０の位置をパラメータで管理し、即座に基板ホルダ４４０の位置を調整することが可能になる。 Even if the initial setting is made so that the uniformity of the plating film thickness is improved, the uniformity of the plating film thickness cannot be continuously guaranteed by aging of the plating module 400 or by changing the plating process. difficult. In this case, it is necessary to readjust the plating module 400 for maintenance work. In this regard, according to the present embodiment, since the axis on the board holder 440 (board Wf) side can be adjusted via the control module 800, the positions of the board holders 440 of the plurality of plating modules 400 are managed by parameters. Then, the position of the board holder 440 can be adjusted immediately.
　次に、本実施形態のめっき処理方法について説明する。図６は、本実施形態のめっき処理方法を示すフローチャートである。図６のフローチャートは、一例として、めっきモジュール４００の設置時の処理を示している。 Next, the plating treatment method of this embodiment will be described. FIG. 6 is a flowchart showing the plating processing method of the present embodiment. The flowchart of FIG. 6 shows, as an example, a process at the time of installing the plating module 400.
　図６に示すように、めっき処理方法は、移動機構４９０を用いて基板ホルダ４４０の昇降方向に直交する方向に基板ホルダ４４０を移動させる（第１の移動ステップ１１０）。具体的には、第１の移動ステップ１１０は、めっき槽４１０の内部に配置されたアノード４３０の軸心と、基板ホルダ４４０に保持された基板Ｗｆの軸心と、を合わせるように基板ホルダ４４０を移動させる。第１の移動ステップ１１０は、基板ホルダ４４０を昇降方向（Ｚ軸方向）に直交する第１の方向（Ｘ軸方向）に移動させる第１の移動ステップと、基板ホルダ４４０を昇降方向および第１の方向に直交する第２の方向（Ｙ軸方向）に移動させる第２の移動ステップと、を含む。第１の移動ステップ１１０は、例えば、オペレータが制御モジュール８００の入力インターフェースを介して基板ホルダ４４０のＸ軸方向およびＹ軸方向の移動量を入力することによって実行することができる。第１の移動ステップ１１０により、基板Ｗｆとアノード４３０の軸心合わせが完了する。 As shown in FIG. 6, in the plating processing method, the substrate holder 440 is moved in a direction orthogonal to the elevating direction of the substrate holder 440 using the moving mechanism 490 (first moving step 110). Specifically, in the first moving step 110, the substrate holder 440 aligns the axis of the anode 430 arranged inside the plating tank 410 with the axis of the substrate Wf held in the substrate holder 440. To move. The first moving step 110 includes a first moving step for moving the substrate holder 440 in a first direction (X-axis direction) orthogonal to the elevating direction (Z-axis direction), and a first moving step for moving the substrate holder 440 in the elevating direction and the first. Includes a second movement step of moving in a second direction (Y-axis direction) orthogonal to the direction of. The first movement step 110 can be executed, for example, by the operator inputting the movement amount of the board holder 440 in the X-axis direction and the Y-axis direction via the input interface of the control module 800. By the first moving step 110, the alignment of the substrate Wf and the anode 430 is completed.
　続いて、めっき処理方法は、基板ホルダ４４０に基板Ｗｆを設置する（ステップ１２０）。続いて、めっき処理方法は、昇降機構４８０を用いて基板ホルダ４４０をめっき槽４１０内に降下させる（降下ステップ１３０）。続いて、めっき処理方法は、回転機構４６０を用いて基板ホルダ４４０を回転させるとともに、めっき槽４１０内に降下された基板ホルダ４４０に保持された基板Ｗｆに対してめっき処理を実行する（めっきステップ１４０）。 Subsequently, the plating treatment method is to install the substrate Wf on the substrate holder 440 (step 120). Subsequently, in the plating treatment method, the substrate holder 440 is lowered into the plating tank 410 by using the elevating mechanism 480 (descent step 130). Subsequently, in the plating treatment method, the substrate holder 440 is rotated by using the rotation mechanism 460, and the substrate Wf held in the substrate holder 440 lowered into the plating tank 410 is subjected to the plating treatment (plating step). 140).
　続いて、めっき処理方法は、めっきステップ１４０によって基板Ｗｆの被めっき面Ｗｆ－ａに形成されためっき膜厚を計測する（計測ステップ１５０）。計測ステップ１５０は、センサ４５５を用いてめっき膜厚を計測することができる。 Subsequently, in the plating treatment method, the plating film thickness formed on the surface to be plated Wf-a of the substrate Wf by the plating step 140 is measured (measurement step 150). In the measurement step 150, the plating film thickness can be measured using the sensor 455.
　続いて、めっき処理方法は、計測ステップ１５０によって計測されためっき膜厚に基づいて、移動機構４９０を用いて基板ホルダ４４０を移動させる（第２の移動ステップ１６０）。第２の移動ステップ１６０は、例えば、基板Ｗｆの軸心をアノード４３０の軸心に対してＸ方向および／またはＹ方向にずらせながら、めっき膜厚の均一性が最も高くなる場所に基板ホルダ４４０を移動させることができる。 Subsequently, in the plating treatment method, the substrate holder 440 is moved by using the moving mechanism 490 based on the plating film thickness measured by the measuring step 150 (second moving step 160). The second moving step 160 shifts the axis of the substrate Wf in the X direction and / or the Y direction with respect to the axis of the anode 430, and places the substrate holder 440 in a place where the uniformity of the plating film thickness is highest. Can be moved.
　続いて、めっき処理方法は、めっき処理を終了すべきか否かを判定する（判定ステップ１７０）。判定ステップ１７０は、例えば、めっき処理を開始してから所定の時間が経過したか、または、所定のめっき膜厚が形成されたか、などに基づいて、めっき処理を終了すべきか否かを判定することができる。めっき処理方法は、めっき処理を終了すべきではないと判定したら（判定ステップ１７０、Ｎｏ）、めっきステップ１４０に戻って処理を繰り返す。一方、めっき処理方法は、めっき処理を終了すべきと判定したら（判定ステップ１７０、Ｙｅｓ）、処理を終了する。 Subsequently, the plating treatment method determines whether or not the plating treatment should be completed (determination step 170). The determination step 170 determines whether or not the plating process should be completed based on, for example, whether a predetermined time has elapsed from the start of the plating process or whether a predetermined plating film thickness has been formed. be able to. When it is determined that the plating process should not be completed (determination step 170, No), the plating process returns to the plating step 140 and repeats the process. On the other hand, in the plating treatment method, when it is determined that the plating treatment should be completed (determination step 170, Yes), the processing is terminated.
　なお、図６のフローチャートはめっきモジュール４００の設置時の処理を示しているので、最初に基板Ｗｆとアノード４３０の軸心合わせ（第１の移動ステップ１１０）を実行したが、第１の移動ステップ１１０は実行されなくてもよい。また、図６のフローチャートは、めっき処理を行いながら基板ホルダ４４０を移動させる（第２の移動ステップ１６０）例を示したが、これに限定されない。例えば、めっきモジュール４００は、複数枚の基板について、図５に示すように基板Ｗｆの軸心をアノード４３０の軸心に対して異なる量ずらせてめっき処理を行うことができる。その結果、めっきモジュール４００は、複数のめっき膜厚プロファイルを得ることができ、これらを比較することによって、最適な移動量を求めることができる。この場合、めっきモジュール４００は、同じめっきプロセスを行う基板に対しては、めっき処理前に、求められた最適な移動量に基づいて、基板ホルダ４４０を移動させることができる。 Since the flowchart of FIG. 6 shows the processing at the time of installing the plating module 400, the axis alignment of the substrate Wf and the anode 430 (first moving step 110) was first executed, but the first moving step. 110 does not have to be executed. Further, the flowchart of FIG. 6 shows an example of moving the substrate holder 440 while performing the plating process (second moving step 160), but the present invention is not limited to this. For example, the plating module 400 can perform a plating process on a plurality of substrates by shifting the axis of the substrate Wf by a different amount with respect to the axis of the anode 430 as shown in FIG. As a result, the plating module 400 can obtain a plurality of plating film thickness profiles, and by comparing these, the optimum movement amount can be obtained. In this case, the plating module 400 can move the substrate holder 440 to the substrate performing the same plating process based on the obtained optimum moving amount before the plating process.
　以上、いくつかの本発明の実施形態について説明してきたが、上記した発明の実施形態は、本発明の理解を容易にするためのものであり、本発明を限定するものではない。本発明は、その趣旨を逸脱することなく、変更、改良され得るとともに、本発明にはその等価物が含まれることは勿論である。また、上述した課題の少なくとも一部を解決できる範囲、または、効果の少なくとも一部を奏する範囲において、特許請求の範囲および明細書に記載された各構成要素の任意の組み合わせ、または、省略が可能である。 Although some embodiments of the present invention have been described above, the above-described embodiments of the present invention are for facilitating the understanding of the present invention and do not limit the present invention. The present invention can be modified and improved without departing from the spirit thereof, and it goes without saying that the present invention includes an equivalent thereof. In addition, any combination or omission of the claims and the components described in the specification is possible within the range in which at least a part of the above-mentioned problems can be solved, or in the range in which at least a part of the effect is exhibited. Is.
　本願は、一実施形態として、めっき液を収容するためのめっき槽と、前記めっき槽に収容されためっき液に被めっき面を向けた状態で基板を保持するための基板ホルダと、前記基板ホルダを昇降させるための昇降機構と、前記基板ホルダの昇降方向に直交する方向に前記基板ホルダを移動させるための移動機構と、を含む、めっき装置を開示する。 In the present application, as an embodiment, a plating tank for accommodating a plating solution, a substrate holder for holding a substrate with the surface to be plated facing the plating solution contained in the plating tank, and the substrate holder. Disclosed is a plating apparatus including an elevating mechanism for raising and lowering a substrate holder and a moving mechanism for moving the substrate holder in a direction orthogonal to the elevating direction of the substrate holder.
　さらに、本願は、一実施形態として、前記移動機構は、前記基板ホルダを前記昇降方向に直交する第１の方向に移動させるための第１の移動機構と、前記基板ホルダを前記昇降方向および前記第１の方向に直交する第２の方向に移動させるための第２の移動機構と、を含む、めっき装置を開示する。 Further, in the present application, as an embodiment, the moving mechanism includes a first moving mechanism for moving the substrate holder in a first direction orthogonal to the elevating direction, and the substrate holder in the elevating direction and the above-mentioned. Disclosed is a plating apparatus comprising a second moving mechanism for moving in a second direction orthogonal to the first direction.
　さらに、本願は、一実施形態として、前記第１の移動機構は、前記第１の方向に伸びる第１のリニアガイドと、第１のリニアガイド上に設けられた第１の支持台と、前記第１の支持台を前記第１のリニアガイドに沿って移動させるための第１の駆動部材と、を含み、前記第２の移動機構は、前記第２の方向に伸びる第２のリニアガイドと、第２のリニアガイド上に設けられた第２の支持台と、前記第２の支持台を前記第２のリニアガイドに沿って移動させるための第２の駆動部材と、を含み、前記第１の移動機構および前記第２の移動機構は、基台上に重ねて配置され、前記昇降機構は、前記第１の支持台または第２の支持台に取り付けられ前記昇降方向に伸びる昇降リニアガイドと、前記基板ホルダを保持する保持部材を前記昇降リニアガイドに沿って移動させるための昇降駆動部材と、を含む、めっき装置を開示する。 Further, in the present application, as an embodiment, the first moving mechanism includes a first linear guide extending in the first direction, a first support base provided on the first linear guide, and the above-mentioned. The second moving mechanism includes a first driving member for moving the first support base along the first linear guide, and the second moving mechanism includes a second linear guide extending in the second direction. , A second support base provided on the second linear guide, and a second drive member for moving the second support base along the second linear guide. The moving mechanism 1 and the second moving mechanism are arranged so as to be overlapped on a base, and the elevating mechanism is attached to the first support or the second support and is an elevating linear guide extending in the elevating direction. Discloses a plating apparatus including an elevating drive member for moving a holding member for holding the substrate holder along the elevating linear guide.
　さらに、本願は、一実施形態として、前記移動機構は、前記めっき槽の内部に配置されたアノードの軸心と、前記基板ホルダに保持された基板の軸心と、を合わせるように前記基板ホルダを移動させる、めっき装置を開示する。 Further, in the present application, as an embodiment, the moving mechanism is such that the axis of the anode arranged inside the plating tank and the axis of the substrate held by the substrate holder are aligned with the substrate holder. Disclose a plating device that moves the
　さらに、本願は、一実施形態として、めっき処理によって前記基板の前記被めっき面に形成されためっき膜厚を計測するためのセンサをさらに含み、前記移動機構は、前記センサによって計測されためっき膜厚に基づいて前記基板ホルダを移動させるように構成される、めっき装置を開示する。 Further, the present application further includes, as an embodiment, a sensor for measuring the plating film thickness formed on the surface to be plated of the substrate by the plating process, and the moving mechanism is the plating film measured by the sensor. Disclosed is a plating apparatus configured to move the substrate holder based on thickness.
　さらに、本願は、一実施形態として、前記めっき槽、前記基板ホルダ、前記昇降機構、および前記移動機構を含むめっきモジュールを複数含む、めっき装置を開示する。 Further, the present application discloses, as an embodiment, a plating apparatus including a plurality of plating modules including the plating tank, the substrate holder, the elevating mechanism, and the moving mechanism.
　さらに、本願は、一実施形態として、めっき槽に収容されためっき液に被めっき面を向けた状態で基板を保持するための基板ホルダを、前記基板ホルダの昇降方向に直交する方向に移動させる移動ステップと、前記基板ホルダを前記めっき槽内に降下させる降下ステップと、前記めっき槽内に降下された基板ホルダに保持された基板に対してめっき処理を実行するめっきステップと、を含む、めっき処理方法を開示する。 Further, in the present application, as an embodiment, the substrate holder for holding the substrate with the surface to be plated facing the plating solution contained in the plating tank is moved in a direction orthogonal to the elevating direction of the substrate holder. Plating includes a moving step, a lowering step of lowering the substrate holder into the plating tank, and a plating step of performing a plating process on the substrate held by the substrate holder lowered into the plating tank. Disclose the processing method.
　さらに、本願は、一実施形態として、前記移動ステップは、前記基板ホルダを前記昇降方向に直交する第１の方向に移動させる第１の移動ステップと、前記基板ホルダを前記昇降方向および前記第１の方向に直交する第２の方向に移動させる第２の移動ステップと、を含む、めっき処理方法を開示する。 Further, in the present application, as an embodiment, the moving step includes a first moving step in which the substrate holder is moved in a first direction orthogonal to the elevating direction, and the substrate holder is moved in the elevating direction and the first. Disclosed is a plating process method comprising a second moving step of moving in a second direction orthogonal to the direction of.
　さらに、本願は、一実施形態として、前記移動ステップは、前記めっき槽の内部に配置されたアノードの軸心と、前記基板ホルダに保持された基板の軸心と、を合わせるように前記基板ホルダを移動させる第１の移動ステップを含む、めっき処理方法を開示する。 Further, in the present application, as an embodiment, the substrate holder is such that the moving step aligns the axis of the anode arranged inside the plating tank with the axis of the substrate held by the substrate holder. Disclosed is a plating process method comprising a first moving step of moving the.
　さらに、本願は、一実施形態として、前記めっきステップによって前記基板の前記被めっき面に形成されためっき膜厚を計測する計測ステップをさらに含み、前記移動ステップは、前記計測ステップによって計測されためっき膜厚に基づいて前記基板ホルダを移動させる第２の移動ステップを含む、めっき処理方法を開示する。 Further, the present application further includes, as an embodiment, a measurement step of measuring the plating film thickness formed on the surface to be plated of the substrate by the plating step, and the moving step is the plating measured by the measurement step. Disclosed is a plating process method comprising a second moving step of moving the substrate holder based on film thickness.
４００　めっきモジュール
４１０　めっき槽
４３０　アノード
４４０　基板ホルダ
４４４　水平保持台
４４６　垂直保持台
４４８　保持部材
４５５　センサ
４６０　回転機構
４７０　傾斜機構
４８０　昇降機構
４８２　昇降リニアガイド
４８４　昇降駆動部材
４９０　移動機構
４９０－１　第１の移動機構
４９０－２　第２の移動機構
４９１　第１の駆動部材
４９２　第１のリニアガイド
４９３　第１の支持台
４９４　基台
４９５　第２の駆動部材
４９６　第２のリニアガイド
４９７　第２の支持台
８００　制御モジュール
１０００　めっき装置
Ｗｆ　基板
Ｗｆ－ａ　被めっき面 400 Plating module 410 Plating tank 430 Anode 440 Board holder 444 Horizontal holding table 446 Vertical holding table 448 Holding member 455 Sensor 460 Rotation mechanism 470 Tilt mechanism 480 Elevating mechanism 482 Elevating linear guide 484 Elevating drive member 490 Moving mechanism 490-1 First Moving mechanism 490-2 Second moving mechanism 491 First drive member 492 First linear guide 493 First support base 494 Base 495 Second drive member 496 Second linear guide 497 Second support base 800 Control module 1000 Plating device Wf Substrate Wf-a Plated surface

Claims (10)

  1. 　めっき液を収容するためのめっき槽と、
    　前記めっき槽に収容されためっき液に被めっき面を向けた状態で基板を保持するための基板ホルダと、
    　前記基板ホルダを昇降させるための昇降機構と、
    　前記基板ホルダの昇降方向に直交する方向に前記基板ホルダを移動させるための移動機構と、
    　を含む、
    　めっき装置。     A plating tank for accommodating the plating solution and
    A substrate holder for holding the substrate with the surface to be plated facing the plating solution contained in the plating tank, and a substrate holder.
    An elevating mechanism for elevating and lowering the board holder,
    A moving mechanism for moving the board holder in a direction orthogonal to the elevating direction of the board holder, and
    including,
    Plating equipment.
  2. 　前記移動機構は、
    　前記基板ホルダを前記昇降方向に直交する第１の方向に移動させるための第１の移動機構と、
    　前記基板ホルダを前記昇降方向および前記第１の方向に直交する第２の方向に移動させるための第２の移動機構と、
    　を含む、
    　請求項１に記載のめっき装置。     The movement mechanism is
    A first moving mechanism for moving the substrate holder in the first direction orthogonal to the elevating direction, and
    A second moving mechanism for moving the substrate holder in the elevating direction and a second direction orthogonal to the first direction, and
    including,
    The plating apparatus according to claim 1.
  3. 　前記第１の移動機構は、前記第１の方向に伸びる第１のリニアガイドと、第１のリニアガイド上に設けられた第１の支持台と、前記第１の支持台を前記第１のリニアガイドに沿って移動させるための第１の駆動部材と、を含み、
    　前記第２の移動機構は、前記第２の方向に伸びる第２のリニアガイドと、第２のリニアガイド上に設けられた第２の支持台と、前記第２の支持台を前記第２のリニアガイドに沿って移動させるための第２の駆動部材と、を含み、
    　前記第１の移動機構および前記第２の移動機構は、基台上に重ねて配置され、
    　前記昇降機構は、前記第１の支持台または第２の支持台に取り付けられ前記昇降方向に伸びる昇降リニアガイドと、前記基板ホルダを保持する保持部材を前記昇降リニアガイドに沿って移動させるための昇降駆動部材と、を含む、
    　請求項２に記載のめっき装置。     The first moving mechanism includes a first linear guide extending in the first direction, a first support base provided on the first linear guide, and the first support base. Includes a first drive member for moving along a linear guide,
    The second moving mechanism includes a second linear guide extending in the second direction, a second support base provided on the second linear guide, and the second support base. Includes a second drive member for moving along a linear guide,
    The first moving mechanism and the second moving mechanism are arranged so as to be overlapped on a base.
    The elevating mechanism is for moving an elevating linear guide that is attached to the first support base or the second support base and extends in the elevating direction and a holding member that holds the substrate holder along the elevating linear guide. Elevating drive member, including,
    The plating apparatus according to claim 2.
  4. 　前記移動機構は、前記めっき槽の内部に配置されたアノードの軸心と、前記基板ホルダに保持された基板の軸心と、を合わせるように前記基板ホルダを移動させる、
    　請求項１から３のいずれか一項に記載のめっき装置。     The moving mechanism moves the substrate holder so as to align the axis of the anode arranged inside the plating tank with the axis of the substrate held by the substrate holder.
    The plating apparatus according to any one of claims 1 to 3.
  5. 　めっき処理によって前記基板の前記被めっき面に形成されためっき膜厚を計測するためのセンサをさらに含み、
    　前記移動機構は、前記センサによって計測されためっき膜厚に基づいて前記基板ホルダを移動させるように構成される、
    　請求項１から４のいずれか一項に記載のめっき装置。     It further includes a sensor for measuring the plating film thickness formed on the surface to be plated of the substrate by the plating process.
    The moving mechanism is configured to move the substrate holder based on the plating film thickness measured by the sensor.
    The plating apparatus according to any one of claims 1 to 4.
  6. 　前記めっき槽、前記基板ホルダ、前記昇降機構、および前記移動機構を含むめっきモジュールを複数含む、
    　請求項１から５のいずれか一項に記載のめっき装置。     A plurality of plating modules including the plating tank, the substrate holder, the elevating mechanism, and the moving mechanism.
    The plating apparatus according to any one of claims 1 to 5.
  7. 　めっき槽に収容されためっき液に被めっき面を向けた状態で基板を保持するための基板ホルダを、前記基板ホルダの昇降方向に直交する方向に移動させる移動ステップと、
    　前記基板ホルダを前記めっき槽内に降下させる降下ステップと、
    　前記めっき槽内に降下された基板ホルダに保持された基板に対してめっき処理を実行するめっきステップと、
    　を含む、
    　めっき処理方法。     A moving step of moving the substrate holder for holding the substrate with the surface to be plated facing the plating solution contained in the plating tank in a direction orthogonal to the elevating direction of the substrate holder.
    A descent step of lowering the substrate holder into the plating tank, and
    A plating step of executing a plating process on a substrate held in a substrate holder lowered into the plating tank, and a plating step.
    including,
    Plating method.
  8. 　前記移動ステップは、
    　前記基板ホルダを前記昇降方向に直交する第１の方向に移動させる第１の移動ステップと、
    　前記基板ホルダを前記昇降方向および前記第１の方向に直交する第２の方向に移動させる第２の移動ステップと、
    　を含む、
    　請求項７に記載のめっき処理方法。     The movement step is
    A first moving step of moving the substrate holder in a first direction orthogonal to the elevating direction, and
    A second moving step of moving the substrate holder in a second direction orthogonal to the elevating direction and the first direction,
    including,
    The plating treatment method according to claim 7.
  9. 　前記移動ステップは、前記めっき槽の内部に配置されたアノードの軸心と、前記基板ホルダに保持された基板の軸心と、を合わせるように前記基板ホルダを移動させる第１の移動ステップを含む、
    　請求項７または８に記載のめっき処理方法。     The moving step includes a first moving step of moving the substrate holder so as to align the axis of the anode arranged inside the plating tank with the axis of the substrate held by the substrate holder. ,
    The plating treatment method according to claim 7 or 8.
  10. 　前記めっきステップによって前記基板の前記被めっき面に形成されためっき膜厚を計測する計測ステップをさらに含み、
    　前記移動ステップは、前記計測ステップによって計測されためっき膜厚に基づいて前記基板ホルダを移動させる第２の移動ステップを含む、
    　請求項７から９のいずれか一項に記載のめっき処理方法。     Further including a measurement step of measuring the plating film thickness formed on the surface to be plated of the substrate by the plating step.
    The moving step includes a second moving step of moving the substrate holder based on the plating film thickness measured by the measuring step.
    The plating treatment method according to any one of claims 7 to 9.
PCT/JP2020/048113 2020-12-23 2020-12-23 Plating device and plating treatment method WO2022137380A1 (en)

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CN114981484A (en) 2022-08-30
JP6911220B1 (en) 2021-07-28

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