WO2022124131A1 - 受光素子、受光装置及び電子機器 - Google Patents

受光素子、受光装置及び電子機器 Download PDF

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Publication number
WO2022124131A1
WO2022124131A1 PCT/JP2021/043778 JP2021043778W WO2022124131A1 WO 2022124131 A1 WO2022124131 A1 WO 2022124131A1 JP 2021043778 W JP2021043778 W JP 2021043778W WO 2022124131 A1 WO2022124131 A1 WO 2022124131A1
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Prior art keywords
light receiving
semiconductor substrate
receiving element
embedded
image pickup
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PCT/JP2021/043778
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English (en)
French (fr)
Japanese (ja)
Inventor
泰志 片山
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to EP21903235.6A priority Critical patent/EP4261900B1/en
Priority to DE112021006412.6T priority patent/DE112021006412T5/de
Priority to US18/255,533 priority patent/US20240021632A1/en
Priority to CN202180071238.1A priority patent/CN116438664A/zh
Priority to KR1020237017424A priority patent/KR20230117114A/ko
Priority to JP2022568199A priority patent/JP7826226B2/ja
Publication of WO2022124131A1 publication Critical patent/WO2022124131A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

Definitions

  • This disclosure relates to a light receiving element, a light receiving device, and an electronic device.
  • CMOS Complementary MOS
  • MOS Metal-Oxide-Semiconductor
  • the CMOS type solid-state image sensor has a photodiode that generates an electric charge according to the amount of light received, a MOS transistor for transferring an electric charge from the photodiode, and a floating diffusion region that accumulates the electric charge. Then, the electric charge temporarily accumulated in the CMOS type solid-state image sensor is processed by a predetermined signal processing circuit and output to the outside as a video signal.
  • examples of such a solid-state image pickup device include the devices described in Patent Document 1 below.
  • CMOS type solid-state image sensor In a CMOS type solid-state image sensor (light receiving element), the potential in the semiconductor substrate is modulated by the gate electrode of the MOS transistor to transfer the charge from the photodiode to the stray diffusion region.
  • MOS transistor In the conventional CMOS type solid-state image sensor, it is difficult to modulate the potential to a desired potential, and poor charge transfer may occur.
  • a semiconductor substrate a photoelectric conversion unit provided in the semiconductor substrate to convert light into electric charges, a charge holding unit provided in the semiconductor substrate and holding the electric charges, and the electric charges are used.
  • a light receiving element comprising a transfer transistor for transferring from the photoelectric conversion unit to the charge holding unit, wherein the transfer transistor has a gate electrode having a pair of first embedded gate portions embedded in the semiconductor substrate.
  • the light receiving device includes a plurality of light receiving elements, each of which is a semiconductor substrate, a photoelectric conversion unit provided in the semiconductor substrate and converting light into a charge, and the above-mentioned. It has a charge holding unit provided in a semiconductor substrate and holding the charge, and a transfer transistor for transferring the charge from the photoelectric conversion unit to the charge holding unit, and the transfer transistor is embedded in the semiconductor substrate.
  • a light receiving device is provided having a gate electrode having a pair of first embedded gate portions.
  • an electronic device equipped with a light receiving device having a plurality of light receiving elements, and each light receiving element is provided in a semiconductor substrate and the semiconductor substrate, and a photoelectric light is converted into a charge. It has a conversion unit, a charge holding unit provided in the semiconductor substrate and holding the charge, and a transfer transistor for transferring the charge from the photoelectric conversion unit to the charge holding unit.
  • the transfer transistor is the transfer transistor.
  • An electronic device is provided having a gate electrode having a pair of first embedded gate portions embedded in a semiconductor substrate.
  • FIG. 1 It is a figure which shows the schematic structure of an example of the image pickup apparatus 1 applied to each embodiment of this disclosure. It is an equivalent circuit diagram of the image pickup device 100 which concerns on embodiment of this disclosure. It is a plane schematic diagram of the image pickup device 100a which concerns on a comparative example. It is a graph which shows the potential in the image pickup device 100a which concerns on a comparative example. It is a plane schematic diagram of the image pickup device 100b which concerns on a comparative example. It is a graph which shows the potential in the image pickup device 100b which concerns on a comparative example. It is a plan view of the image pickup device 100 which concerns on 1st Embodiment of this disclosure.
  • FIG. 1 It is a figure which shows an example of the schematic structure of an endoscopic surgery system. It is a block diagram which shows an example of the functional structure of a camera head and a CCU. It is a block diagram which shows an example of the schematic structure of a vehicle control system. It is explanatory drawing which shows an example of the installation position of the vehicle exterior information detection unit and the image pickup unit.
  • a plurality of components having substantially the same or similar functional configurations may be distinguished by adding different numbers after the same reference numerals. However, if it is not necessary to particularly distinguish each of the plurality of components having substantially the same or similar functional configurations, only the same reference numerals are given. Further, similar components of different embodiments may be distinguished by adding different alphabets after the same reference numerals. However, if it is not necessary to distinguish each of the similar components, only the same reference numerals are given.
  • the embodiment of the present disclosure is applied to a back-illuminated light receiving device (imaging device) as an example. Therefore, in the light receiving device, light is incident from the back surface side of the semiconductor substrate. Will be done. Therefore, in the following description, the front surface of the semiconductor substrate is a surface facing the back surface when the side on which light is incident is the back surface.
  • the embodiment of the present disclosure is not limited to being applied to a back-illuminated light receiving device, and may be applied to, for example, a front-illuminated light receiving device.
  • the description of the specific shape in the following explanation does not mean only the shape defined geometrically.
  • the description of the specific shape, etc. in the following description is similar to the case where there is an allowable difference (error / strain) in the element, its manufacturing process, and its use / operation, or its shape. It shall also include the shape to be used.
  • the term "circular shape” or “substantially circular shape” is used in the following description, it is not limited to a perfect circle, but also includes a shape similar to a perfect circle such as an ellipse. It will be.
  • electrically connected means connecting a plurality of elements so that electricity (signal) is conducted. Means that.
  • electrically connected in the following description includes not only the case of directly and electrically connecting a plurality of elements, but also indirectly and electrically through other elements. It shall also include the case of connecting to.
  • sharing means that other elements are provided so that one element may be shared, in other words, unless otherwise specified.
  • the other element means that it is shared by each of a predetermined number of one element.
  • FIG. 1 is a diagram showing a schematic configuration of an example of an image pickup apparatus 1 applied to each embodiment of the present disclosure.
  • the image pickup device 100 has, for example, a photodiode serving as a photoelectric conversion unit and a plurality of pixel transistors (so-called MOS transistors).
  • the plurality of pixel transistors can include, for example, a transfer transistor, a reset transistor and an amplification transistor.
  • the plurality of pixel transistors may include a selection transistor.
  • the image pickup element 100 may be configured to have a shared pixel structure such that one floating diffusion region (charge holding portion) and a plurality of pixel transistors are shared among the plurality of image pickup elements 100.
  • the peripheral circuit unit includes a vertical drive circuit unit 32, a column signal processing circuit unit 34, a horizontal drive circuit unit 36, an output circuit unit 38, and a control circuit unit 40.
  • the control circuit unit 40 receives an input clock and data for instructing an operation mode or the like, and outputs data such as internal information of the image pickup apparatus 1. That is, in the control circuit unit 408, a clock signal that serves as a reference for the operation of the vertical drive circuit unit 32, the column signal processing circuit unit 34, the horizontal drive circuit unit 36, etc., based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock. Generate a control signal. Then, these signals are input to the vertical drive circuit unit 32, the column signal processing circuit unit 34, the horizontal drive circuit unit 36, and the like.
  • the vertical drive circuit unit 32 is composed of, for example, a shift register, selects a pixel drive wiring 42, supplies a pulse for driving the image pickup element 100 to the selected pixel drive wiring 42, and causes the image pickup element 100 in a row unit. Drive. That is, the vertical drive circuit unit 32 sequentially selectively scans each image sensor (pixel) 100 in the pixel region 30 in the vertical direction in units of rows. Then, the pixel signal is supplied to the column signal processing circuit unit 34 via the vertical signal line 44 based on the signal charge generated according to the amount of light received by, for example, the photodiode, which is the photoelectric conversion unit of each image pickup element 100.
  • the column signal processing circuit unit 34 is arranged for each column of the image pickup element 100, for example, and performs signal processing such as noise removal on the signal output from the image pickup element 100 for one row. That is, the column signal processing circuit unit 34 performs signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise peculiar to the image sensor 100, signal amplification, and AD (Analog-Digital) conversion. conduct.
  • a horizontal selection switch (not shown) is provided between the output stage of the column signal processing circuit unit 34 and the horizontal signal line 46.
  • the horizontal drive circuit unit 36 is composed of, for example, a shift register, and by sequentially outputting horizontal scan pulses, each of the column signal processing circuit units 34 is sequentially selected, and pixel signals are input from each of the column signal processing circuit units 34. It is output to the horizontal signal line 46.
  • the output circuit unit 38 performs signal processing on the signals sequentially supplied from each of the column signal processing circuit units 34 via the horizontal signal line 46 and outputs the signals.
  • the output circuit unit 38 may only perform buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.
  • the input / output terminal 48 exchanges signals with the outside.
  • FIG. 2 is an equivalent circuit diagram of the image pickup device 100 according to the embodiment of the present disclosure.
  • the image pickup device 100 has a photodiode PD, a transfer transistor TG, a stray diffusion region FD, a reset transistor RST, and an amplification transistor AMP as photoelectric conversion units that convert light into electric charges. And a selection transistor SEL. Further, as shown in FIG. 2, the image pickup device 100 has a conversion efficiency switching transistor FDG and a capacitance FC.
  • one of the source / drain of the transfer transistor TG is electrically connected to the photodiode PD, and the other of the source / drain of the transfer transistor TG is in the floating diffusion region FD. It is electrically connected. Then, the transfer transistor TG becomes a conductive state according to the voltage applied to its own gate (transfer gate), and the electric charge generated by the photodiode PD can be transferred to the stray diffusion region FD.
  • the floating diffusion region FD is electrically connected to the gate of the amplification transistor AMP that converts (amplifies) the electric charge into a voltage and outputs it as a signal (pixel signal).
  • one of the source / drain of the amplification transistor AMP is electrically connected to one of the source / drain of the selection transistor SEL that outputs the signal obtained by conversion to the signal line VSL according to the selection signal.
  • the other of the source / drain of the amplification transistor AMP is electrically connected to the power supply circuit (power supply potential VDD).
  • the other of the source / drain of the selection transistor SEL is electrically connected to the signal line VSL that transmits the converted voltage as a signal, and further electrically connected to the column signal processing circuit unit 34 described above.
  • the gate of the selection transistor SEL is electrically connected to a selection line (not shown) for selecting a line for outputting a signal, and further electrically connected to the above-mentioned vertical drive circuit unit 32. That is, the electric charge accumulated in the floating diffusion region FD is converted into a voltage by the amplification transistor AMP under the control of the selection transistor SEL, and is output to the signal line VSL.
  • one of the source / drain of the conversion efficiency switching transistor FDG is electrically connected to the floating diffusion region FD, and the other of the source / drain of the conversion efficiency switching transistor FDG is connected to the capacitance FC. It is electrically connected.
  • the conversion efficiency switching transistor FDG has a large amount of light incident on the image pickup element 100 and a large amount of electric charge is generated, the conversion efficiency switching transistor FDG becomes conductive according to the voltage applied to its own gate, and becomes a floating diffusion region FD. It is electrically connected to the capacitance FC to adjust the amount of charge that can be stored.
  • the floating diffusion region FD is electrically connected to one of the drain / source of the reset transistor RST for resetting the accumulated charge via the conversion efficiency switching transistor FDG.
  • the gate of the reset transistor RST is electrically connected to a reset signal line (not shown), and further electrically connected to the above-mentioned vertical drive circuit unit 32.
  • the other of the drain / source of the reset transistor RST is electrically connected to the power supply circuit (power supply potential VDD). Then, the reset transistor RST becomes conductive according to the voltage applied to its own gate, and the electric charge accumulated in the stray diffusion region FD can be reset (discharged to the power supply circuit (power supply potential VDD)).
  • the equivalent circuit of the image pickup device 100 according to the present embodiment is not limited to the example shown in FIG. 2, and may include, for example, other elements and the like, and is not particularly limited.
  • FIGS. 3 and 4 are schematic plan views of the image pickup devices 100a and 100b according to the comparative example
  • FIGS. 4 and 6 are graphs showing the potentials of the image pickup devices 100a and 100b according to the comparative example.
  • the comparative example means the image pickup devices 100a and 100b that the present inventor has repeatedly studied before forming the embodiment of the present disclosure.
  • the image pickup device 100a according to the comparative example initially examined by the present inventor has a planar structure as shown in FIG. Specifically, as shown in FIG. 3, the image pickup device 100a includes a pixel separation section 104 provided on the semiconductor substrate 102 for separating adjacent image pickup devices 100a from each other, and a semiconductor substrate 102 surrounded by the pixel separation section 104. It is provided in the region and has a photodiode (photoelectric conversion unit) PD that converts incident light into a charge. Further, the image pickup element 100a includes a floating diffusion region (charge holding portion) FD for accumulating charges generated by the photodiode PD and a transfer transistor TG (shown in FIG.
  • the transfer transistor TG has a flat plate-shaped gate electrode laminated on the semiconductor substrate 102 via an insulating film (not shown).
  • FIG. 4 shows the potential in the semiconductor substrate 102 in the image pickup device 100a by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 3 to the floating diffusion region FD from the right to the left in FIG. Shows.
  • the potential in the semiconductor substrate 102 is modulated by applying a predetermined voltage to the gate electrode of the transfer transistor TG, as shown in FIG.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 4) towards the stray diffusion region FD (far left in FIG. 4). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • a potential peak (barrier) as shown in the region surrounded by the broken line in FIG. 4 may occur in the photodiode PD, in the vicinity of the transfer transistor TG, or the like.
  • the potential of the floating diffusion region FD may be deepened (potential may be lowered), or the width of the floating diffusion region FD may be widened (width of a portion having a deep potential). (Spread) in some cases.
  • the present inventor has conceived to replace the transfer transistor TG with a vertical transfer transistor VG having a vertical structure (Vertical Gate; VG structure) in order to avoid such transfer defects. Since the gate electrode of the vertical transfer transistor VG has a vertical structure, the present inventor can expect to modulate the potential deep into the semiconductor substrate 102, so that the occurrence of the barrier is suppressed and the transfer as described above is performed. I thought it might be possible to prevent defects. Next, based on such a situation, the image pickup device 100b according to the comparative example conceived next by the present inventor will be described.
  • the photodiode PD, the vertical transfer transistor VG, and the floating diffusion region FD are rectangular, as in the above-mentioned image sensor 100a.
  • the image pickup devices 100b having a shape are arranged so as to be arranged in a line on the diagonal line in order.
  • the vertical transfer transistor VG is embedded in the semiconductor substrate 102 via a flat plate-shaped gate electrode laminated on the semiconductor substrate 102 via an insulating film (not shown) and an insulating film (not shown). It has an embedded portion 202 (indicated by a broken line in FIG. 5).
  • the vertical transfer transistor VG can modulate the potential to a deep region in the semiconductor substrate 102. Therefore, the present inventor can modulate the potential to a deep region in the semiconductor substrate 102 by using such a vertical transfer transistor VG, so that the potential can be modulated in the photodiode PD, in the vicinity of the transfer transistor TG, or the like. , I thought that it can be expected to avoid the occurrence of potential peaks (barriers).
  • FIG. 6 shows the potential in the semiconductor substrate 102 in the image pickup device 100b by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 5 to the floating diffusion region FD from the right to the left in FIG. Shows.
  • the potential in the semiconductor substrate 102 is modulated by applying a predetermined voltage to the gate electrode of the vertical transfer transistor VG, as shown in FIG.
  • the modulated potential has a gradient that descends from the photodiode PD (right end in FIG. 6) toward the stray diffusion region FD (left end in FIG. 6). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • a potential peak (barrier) does not occur in the photodiode PD or in the vicinity of the vertical transfer transistor VG. Therefore, the electric charge can be smoothly transferred from the photodiode PD toward the diffusion region FD without being hindered by the barrier, and the electric charge transfer failure does not occur.
  • the degree of modulation becomes too large in the semiconductor substrate 102 below the vertical transfer transistor VG, and the potential is deep locally. Part occurs. Then, the electric charge tends to stay in such a portion where the potential is deep. Further, when the electric charge stays in such a locally deep potential portion, when the vertical transfer transistor VG is turned off, the electric charge that should be originally transferred to the stray diffusion region FD is generated. Returning to the photodiode PD (signal return, pumping) from the relevant portion, a charge transfer failure also occurs.
  • the present inventor has made extensive studies on the structure of the image pickup device 100 in order to avoid the occurrence of transfer defects, and created the first embodiment of the present disclosure described below. I arrived.
  • a fin type vertical transfer transistor VG having a pair of embedded portions 202 embedded in the semiconductor substrate 102 is used as the transfer transistor.
  • the potential can be modulated to a deeper region in the semiconductor substrate 102 as desired.
  • the present embodiment unlike the image pickup device 100a according to the comparative example, it is possible to avoid the occurrence of a potential peak (barrier) in the photodiode PD, in the vicinity of the transfer transistor TG, or the like. Furthermore, according to the present embodiment, unlike the image pickup device 100b according to the comparative example, it is possible to avoid the occurrence of a locally deep potential portion. That is, according to the present embodiment, it is possible to avoid the occurrence of a barrier or a portion having a deep potential locally, so that it is possible to avoid the occurrence of poor charge transfer.
  • the details of the first embodiment of the present disclosure will be sequentially described.
  • FIG. 7 is a schematic plan view of the image pickup device 100 according to the present embodiment.
  • the image pickup device (light receiving element) 100 has a pixel separation unit 104 for separating adjacent image pickup devices 100 provided on the semiconductor substrate 102.
  • the image pickup device 100 is provided in the region of the semiconductor substrate 102 surrounded by the pixel separation section 104, and has a photodiode (photoelectric conversion section) PD that converts incident light into electric charges.
  • the image pickup element 100 includes a floating diffusion region (charge holding portion) FD that stores (holds) the charge generated by the photodiode PD, and a vertical transfer transistor that transfers the charge from the photodiode PD to the floating diffusion region FD. It has a VG (shown in FIG.
  • the photodiode PD, the vertical transfer transistor VG, and the stray diffusion region FD are arranged in a row on the diagonal line of the image sensor 100 in order. Have been placed. More specifically, in the image sensor 100 according to the present embodiment, a photodiode PD is provided in the center of the image sensor 100, and a floating diffusion region FD is provided at a corner (end) of the rectangular image sensor 100. It will be provided. Further, the vertical transfer transistor VG is provided between the photodiode PD and the stray diffusion region FD.
  • the vertical transfer transistor VG is embedded in the flat plate-shaped gate electrode 200 laminated on the semiconductor substrate 102 via an insulating film (not shown) and the semiconductor substrate 102. It has a pair of embedded portions (first embedded gate portions) 202a and 202b (indicated by a broken line in FIG. 7). Further, each of the pair of embedded portions 202 is provided in a substantially rectangular shape in the plane shown in FIG. 7 (a cross section obtained by cutting the image pickup device 100 along a direction parallel to the surface of the semiconductor substrate 102).
  • each embedded portion 202 is formed in the above plane in a rectangular shape having a long side extending from the center O of the image pickup device 100 toward the center of the floating diffusion region FD (arrow in FIG. 7). ing. Therefore, the pair of embedded portions 202 are in a positional relationship parallel to each other. Further, an insulating film (first oxide film) made of silicon oxide (SiO 2 ) or the like (not shown) is provided between the embedded portion 202 and the semiconductor substrate 102. In other words, the embedded portion 202 is provided. It is covered with the insulating film.
  • the distance between the pair of embedded portions 202a and 202b can be freely widened, it is possible to modulate the potential of a wide region (a wide region in a plan view) in the semiconductor substrate 102. can. Therefore, according to the present embodiment, it is possible not only to suppress the occurrence of transfer defects as described above, but also to suppress the occurrence of blooming.
  • blooming refers to a phenomenon in which electric charges flow out to an adjacent image sensor 100, an unintended pixel signal is generated in the adjacent image sensor 100, and an image that should be originally cannot be imaged.
  • the potential of a wide region (a wide region in a plan view) in the semiconductor substrate 102 can be modulated, a large amount of charges generated by the photodiode PD can be transferred to the stray diffusion region FD. Therefore, it is possible to prevent the electric charge from flowing out to the adjacent image pickup element 100.
  • FIG. 8 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 7 to the floating diffusion region FD from the right to the left in FIG. Shows.
  • the potential in the semiconductor substrate 102 is modulated as shown in FIG.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 8) towards the stray diffusion region FD (far left in FIG. 8). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • FIG. 8 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 7 to the floating diffusion region FD from the right to the left in FIG. Shows.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 8) towards the
  • a potential peak (barrier) does not occur in the photodiode PD or in the vicinity of the transfer transistor TG. Therefore, according to the present embodiment, the electric charge generated in the photodiode PD is smoothly transferred toward the stray diffusion region FD without being hindered by the barrier.
  • the pair of embedded portions 202a and 202b substantially uniformly deepen the potential in the semiconductor substrate 102 below the gate electrode 200 of the vertical transfer transistor VG. .. Therefore, in the present embodiment, unlike the image pickup device 100b according to the comparative example, a portion having a deep potential is not locally generated. Therefore, according to the present embodiment, since the electric charge does not stay in the portion where the potential is deep locally, when the vertical transfer transistor VG is turned off, the charge returns from the portion to the photodiode PD (signal return). , Pumping up) and other charge transfer defects can be suppressed.
  • the embedded portion 202 is limited to being provided in a rectangular shape on the plane shown in FIG. 7 (a cross section obtained by cutting the image pickup device 100 along a direction parallel to the surface of the semiconductor substrate 102).
  • it may be provided in a substantially elliptical shape.
  • each embedded portion 202 is formed in the above plane in an elliptical shape having a long axis extending from the center O of the image pickup device 100 toward the center of the floating diffusion region FD (arrow in FIG. 7). May be. Therefore, even in the case of this modification, the pair of embedded portions 202 are in a positional relationship parallel to each other.
  • the pixel region 30 of the image pickup apparatus 1 can be configured by using a plurality of image pickup elements 100 according to the above-described embodiment.
  • FIG. 9 is a schematic plan view of the image pickup apparatus 1 according to the present embodiment.
  • four image pickup elements 100 can be configured as one unit. Specifically, in the example shown in FIG. 9, four image pickup devices 100 are arranged in two rows ⁇ two columns, and these four image pickup devices 100 share one floating diffusion region FD located at the center. Further, these four image pickup devices 100 share one selection transistor SEL, amplification transistor AMP, reset transistor RST, and conversion efficiency switching transistor FDG.
  • the unit is not limited to being composed of four image pickup devices 100 arranged in 2 rows ⁇ 2 columns, and the number and arrangement of image pickup devices are different from those shown in FIG. It may be composed of 100.
  • FIG. 10 is a schematic cross-sectional view of the image pickup apparatus 1 according to the present embodiment, and in detail, shows a cross section of the image pickup apparatus 1 cut along the AA'line of FIG.
  • the upper side in the drawing is the back surface side of the semiconductor substrate 102
  • the lower side in the drawing is the front surface side of the semiconductor substrate 102.
  • the image pickup device 100 has a p-type semiconductor substrate 102 made of a silicon substrate or the like. Further, the photodiode PD is formed in the semiconductor substrate 102 by forming the n-type semiconductor region and the p-type semiconductor region in the p-type semiconductor substrate 102.
  • an on-chip lens 300 made of a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, a siloxane resin, or the like, which is incident with reflected light from the subject, is provided.
  • a flattening film 302 made of silicon oxide (SiO 2 ), silicon nitride (SiN), silicon oxynitride (SiON), or the like is provided.
  • an antireflection film 304 made of an insulating film is provided below the flattening film 302.
  • the antireflection film 304 can be formed from hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TIO 2 ), silicon oxide, or the like, or a laminate thereof.
  • a light-shielding film 306 is provided on the back surface of the semiconductor substrate 102 at the boundary region with the adjacent image sensor 100 to prevent the reflected light from the subject from entering the adjacent image sensor 100.
  • the light-shielding film 306 is made of a material that blocks light, and can be formed by using a metal material such as tungsten (W), aluminum (Al), or copper (Cu).
  • a pixel separation unit 104 is provided to prevent incident light from entering the adjacent image pickup device 100.
  • the pixel separation portion 104 is composed of, for example, a trench (groove) provided in the semiconductor substrate 102 and an insulating film such as silicon oxide embedded in the trench.
  • Two vertical transfer transistors VG which are vertical transistors, are formed so as to sandwich the floating diffusion region FD, which is an n-type semiconductor region provided in the semiconductor substrate 102.
  • the vertical transfer transistor VG is provided on the surface of the semiconductor substrate 102 via an insulating film (not shown) having a film thickness of, for example, several nm, for example, a gate electrode 200 made of a polysilicon film.
  • the vertical transfer transistor VG has an embedded portion 202 made of a polysilicon film embedded in the semiconductor substrate 102.
  • FIG. 10 the cross section shown in FIG.
  • the embedded portion 202 may be provided in a substantially rectangular shape, or may be provided in a tapered shape that spreads from top to bottom or spreads from bottom to top. May be good. Further, the embedded portion 202 is covered with an insulating film having a film thickness of, for example, several nm, which is not shown in FIG.
  • the wiring layer 400 includes an insulating film 402 made of silicon oxide, silicon nitride, silicon oxynitride and the like, and wiring 404 made of polysilicon, tungsten, aluminum, copper and the like. Although not shown, the wiring layer 400 may be formed with circuits including various transistors and the like.
  • the cross-sectional structure of the image pickup device 100 according to the present embodiment is not limited to the example shown in FIG. 10, and may include, for example, other elements and the like, and is not particularly limited.
  • a fin type vertical transfer transistor VG having a gate electrode having a pair of embedded portions 202a and 202b embedded in the semiconductor substrate 102 is used.
  • the potential can be modulated as desired to a deep region in the semiconductor substrate 102. Therefore, according to the present embodiment, unlike the image pickup device 100a according to the comparative example, it is possible to avoid the occurrence of a potential peak (barrier) in the photodiode PD, in the vicinity of the transfer transistor TG, or the like. Therefore, according to the present embodiment, the electric charge generated in the photodiode PD is smoothly transferred toward the stray diffusion region FD without being hindered by the barrier.
  • the present embodiment unlike the image pickup device 100b according to the comparative example, it is possible to avoid the occurrence of a locally deep potential portion. Therefore, according to the present embodiment, since the electric charge does not stay in the portion where the potential is deep locally, when the vertical transfer transistor VG is turned off, the charge returns from the portion to the photodiode PD (signal return). , Pumping up) and other charge transfer defects can be suppressed. That is, according to the present embodiment, it is possible to avoid the occurrence of charge transfer failure.
  • FIG. 11 is a schematic plan view of the image pickup device 100 according to the present embodiment
  • FIG. 12 is a graph showing the potential of the image pickup device 100 according to the present embodiment.
  • the pair of embedded portions 202a and 202b are provided so as to have a positional relationship parallel to each other in the plane shown in FIG. 7.
  • the pair of embedded portions 202a and 202b are provided so as to have a positional relationship that is not parallel to each other.
  • a potential gradient toward the stray diffusion region FD is more preferably created under the gate electrode 200 of the vertical transfer transistor VG. The charge transfer can be made smoother.
  • the vertical transfer transistor VG is a semiconductor via an insulating film (not shown). It has a flat plate-shaped gate electrode 200 laminated on the substrate 102, and a pair of embedded portions (first embedded gate portions) 202a and 202b embedded in the semiconductor substrate 102. Further, in the present embodiment, as in the first embodiment described above, each of the pair of embedded portions 202a and 202b is an image pickup device along a plane shown in FIG. 11 (a direction parallel to the surface of the semiconductor substrate 102). It is provided in a rectangular shape in a cross section obtained by cutting 100).
  • the distance between one embedded portion 202a and the other embedded portion 202b floats from the center O of the image pickup element 100. It is provided so as to gradually expand along a direction extending along a direction toward the center of the diffusion region FD (arrow in FIG. 11).
  • the angle D formed by one embedded portion 202a and the other embedded portion 202b on the plane may be 45 to 120 degrees, and a desired region in the semiconductor substrate 102 is desired. It can be appropriately selected so as to have potential. That is, in the present embodiment, the angle D formed by one embedded portion 202a and the other embedded portion 202b can be appropriately adjusted according to the range and depth at which the potential is desired to be modulated and the gradient of the desired potential.
  • FIG. 12 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 11 to the stray diffusion region FD from the right to the left in FIG. Shows.
  • the potential in the semiconductor substrate 102 is modulated as shown in FIG.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 12) towards the stray diffusion region FD (far left in FIG. 12). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • the gradient of the potential toward the stray diffusion region FD is more preferably created by descending to the left. Can be done. Therefore, according to the present embodiment, the charge transfer can be made smoother.
  • FIG. 13 is an explanatory diagram for explaining the present embodiment.
  • the vertical transfer transistor VG On the left side of FIG. 13, the vertical transfer transistor VG according to the second embodiment described above is shown.
  • the pair of embedded portions 202 are each covered with an insulating film (first oxide film) 206 having a film thickness of, for example, several nm, which is made of silicon oxide or the like, and one of them.
  • the distance between the embedded portion 202 and the other embedded portion 202 is provided so as to temporarily increase along the direction from the center O of the image pickup element 100 toward the center of the floating diffusion region FD.
  • the electric charge passing between the pair of embedded portions 202 is smoothly suspended and diffused. It can be transferred to the area FD.
  • the charges passing outside the pair of embedded portions 202 may be trapped and difficult to transfer to the stray diffusion region FD.
  • the present inventor has conceived to add an element that functions as an electric charge trap prevention outside the embedded portion 202 in order to prevent the charge from being trapped outside the pair of embedded portions 202.
  • an element for example, it is conceivable to provide a p-well having a p-type conductive type on the outside of the pair of embedded portions 202. By providing such an element, the electric charge cannot pass outside the embedded portion 202, so that it is possible to prevent the electric charge from being trapped outside the embedded portion 202.
  • the flat plate type transfer transistor TG is changed to the vertical transfer transistor VG, and a pair of embedded portions 202a and 202b are provided. Therefore, the contact area between the gate electrode 200 including the embedded portion 202 and the semiconductor substrate 102 via the insulating film (not shown) becomes wide, and the parasitic capacitance parasitic on the gate electrode 200 of the vertical transfer transistor VG increases significantly. .. Due to such a large parasitic capacitance, even if a predetermined voltage is applied to the gate electrode 200 of the vertical transfer transistor VG during charge transfer, the signal waveform of the applied voltage is blunted and the potential in the semiconductor substrate 102 is increased. It becomes impossible to modulate smoothly, and transfer deterioration occurs.
  • the present inventor forms an element functioning as a trap prevention on the outside of the pair of embedded portions 202 and on the outside of the embedded portion 202 with an oxide film such as a silicon oxide film. I came up with that.
  • an oxide film such as a silicon oxide film, it is possible to suppress an increase in parasitic capacitance as compared with the case of using p-well (silicon) due to the relationship of the relative permittivity.
  • the side surface located on the side opposite to the side surface facing the other embedded portion 202 is an insulating film (first oxidation) covering the facing side surface.
  • Membrane for example, having a film thickness of about 2 nm to 15 nm. It is covered with a thicker insulating film (second oxide film) 204 (for example, the insulating film 204 has a film thickness of about several hundred nm). More specifically, the insulating film 204 is preferably provided so as to spread between the embedded portion 202 and the pixel separating portion 104 so that the electric charge cannot pass outside the embedded portion 202.
  • the thick insulating film 204 is formed of an oxide film such as a silicon oxide film in order to suppress an increase in parasitic capacitance. By doing so, according to the present embodiment, it is possible to prevent the charge from being trapped outside the embedded portion 202 while avoiding increasing the parasitic capacitance. Further, in the present embodiment, it is preferable that the thick insulating film 204 covers the side surface of the embedded portion 202 facing the photodiode PD. By doing so, it is possible to prevent the electric charge from being trapped on the side surface of the embedded portion 202 facing the photodiode PD, and to smoothly transfer the electric charge to the floating diffusion region FD.
  • FIG. 14 is a schematic plan view of the image pickup device 100 according to the present embodiment
  • FIG. 15 is a graph showing the potential of the image pickup device 100 according to the present embodiment.
  • the vertical transfer transistor VG is a flat plate-shaped gate laminated on the semiconductor substrate 102 via an insulating film (not shown). It has an electrode 200 and a pair of embedded portions (first embedded gate portions) 202 embedded in the semiconductor substrate 102. Further, the embedded portion 202 has an insulating film 204 that covers the side surface opposite to the side surface facing the other embedded portion 202.
  • the insulating film 204 has a thickness of, for example, 10 to 20 times or more (for example, a film thickness of 100 nm) as compared with an insulating film (for example, a film thickness of about several nm) that covers the side surface facing the other embedded portion 202. degree).
  • the insulating film 204 is provided so as to spread between the embedded portion 202 and the pixel separating portion 104 so that the electric charge cannot pass outside the embedded portion 202.
  • the thick insulating film 204 is formed of an oxide film such as a silicon oxide film in order to suppress an increase in parasitic capacitance.
  • FIG. 15 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 14 to the stray diffusion region FD from the right to the left in FIG. Shows.
  • the potential in the semiconductor substrate 102 is modulated as shown in FIG.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 15) towards the stray diffusion region FD (far left in FIG. 15). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • FIG. 16 is a schematic plan view of the image pickup device 100 according to the modification of the present embodiment
  • FIG. 17 is a graph showing the potential of the image pickup device 100 according to the modification of the present embodiment.
  • the insulating film 204 according to the present embodiment is provided with respect to the configuration of the second embodiment described above. By doing so, according to this modification, it is possible to prevent the charge from being trapped outside the embedded portion 202 while avoiding increasing the parasitic capacitance.
  • FIG. 17 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 16 to the stray diffusion region FD from the right to the left in FIG. Shows.
  • the potential in the semiconductor substrate 102 is modulated as shown in FIG.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 17) towards the stray diffusion region FD (far left in FIG. 17). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • FIG. 18 is a schematic plan view of the image pickup device 100 according to the present embodiment
  • FIG. 19 is a graph showing the potential of the image pickup device 100 according to the present embodiment.
  • a further embedded portion (a further embedded portion (1st gate embedded gate portion) 202 according to the configuration of the third embodiment described above is provided between the pair of embedded portions (first gate embedded gate portion) 202.
  • a second embedded gate portion) 210 is provided.
  • the embedded portion 210 is provided in a substantially circular shape in the plane shown in FIG. 18 (a cross section obtained by cutting the image pickup device 100 along a direction parallel to the surface of the semiconductor substrate 102).
  • an insulating film (third oxide film) 212 (for example, a film thickness of about 2 nm to 15 nm) made of silicon oxide (SiO 2 ) or the like (not shown) is provided between the embedded portion 210 and the semiconductor substrate 102.
  • the embedded portion 210 is covered with the insulating film. Further, in the present embodiment, in the plane of FIG. 18, the embedded portion 210 is located closer to the floating diffusion region FD than the center of the embedded portion 202. By doing so, the embedded portion 210 more preferably modulates the potential in the vicinity of the floating diffusion region FD.
  • FIG. 19 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 18 toward the floating diffusion region FD from the right to the left in FIG. Shows.
  • the potential in the semiconductor substrate 102 is modulated as shown in FIG.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 19) towards the stray diffusion region FD (far left in FIG. 19). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • the pair of embedded portions 202 makes the potential deeper almost uniformly in the entire semiconductor substrate 102 below the gate electrode 200 of the vertical transfer transistor VG.
  • the embedded portion 210 makes the potential in the vicinity of the floating diffusion region FD more preferably deep, and the charge can be transferred more smoothly.
  • FIG. 20 is a schematic plan view of the image pickup device 100 according to the modification of the present embodiment
  • FIG. 21 is a graph showing the potential of the image pickup device 100 according to the modification of the present embodiment.
  • the embedded portion 210 is the center of the embedded portion 202. It is located farther from the floating diffusion region FD. By doing so, it is possible to suppress the generation of a potential barrier in the vicinity of the photodiode PD, the potential in the vicinity of the photodiode PD becomes more preferably deep, and the charge can be transferred more smoothly.
  • FIG. 21 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 20 toward the floating diffusion region FD from right to left in FIG. 21. Shows.
  • the pair of embedded portions 202 makes the potential deeper almost uniformly in the entire semiconductor substrate 102 below the gate electrode 200 of the vertical transfer transistor VG.
  • the embedded portion 210 suppresses the generation of a potential barrier in the vicinity of the photodiode PD, and the potential in the vicinity of the photodiode PD becomes more preferably deep. , The charge can be transferred more smoothly.
  • the potential in the semiconductor substrate 102 can be more preferably modulated, the occurrence of charge transfer failure can be further suppressed, and the charge can be further reduced. It can be transferred smoothly.
  • the electric field under the gate electrode 200 of the vertical transfer transistor VG can be made uniform, and charge transfer can be performed. Can be further improved.
  • FIG. 22 is a schematic plan view of the image pickup device 100 according to the present embodiment
  • FIG. 23 is a graph showing the potential of the image pickup device 100 according to the present embodiment.
  • the vertical transfer transistor VG is a flat plate-shaped gate laminated on the semiconductor substrate 102 via an insulating film (not shown). It has an electrode 200 and a pair of embedded portions (first embedded gate portions) 202 embedded in the semiconductor substrate 102. Further, each of the pair of embedded portions 202 is provided so that the center line of each of the pair of embedded portions 202 draws an arc in the plane shown in FIG. 22 (a cross section obtained by cutting the image pickup device 100 along a direction parallel to the surface of the semiconductor substrate 102). Has been done. Further, in the present embodiment, in the plane shown in FIG.
  • the distance between one embedded portion 202 and the other embedded portion 202 is a floating diffusion region from the center O of the image pickup element 100. It is preferable that the FD is provided so as to gradually expand along a direction extending along a direction toward the center of the FD (arrow in FIG. 22).
  • the embedded portion 202 is not limited to the shape as shown in FIG. 22, and can be changed into various shapes so that the desired potential modulation can be obtained.
  • FIG. 23 shows the potential in the semiconductor substrate 102 in the image pickup device 100 by computer simulation, and shows the distance from the photodiode PD along the arrow in FIG. 22 toward the floating diffusion region FD from right to left in FIG. 23. Shows.
  • the potential in the semiconductor substrate 102 is modulated as shown in FIG. 23.
  • the modulated potential has a gradient that descends from the photodiode PD (far right in FIG. 23) towards the stray diffusion region FD (far left in FIG. 23). Therefore, the electric charge generated by the photodiode PD is transferred toward the stray diffusion region FD according to the gradient.
  • the pair of embedded portions 202 makes the potential deeper almost uniformly in the entire lower part of the gate electrode 200 of the vertical transfer transistor VG, further improving the charge transfer. can do.
  • FIG. 24 is a schematic diagram for explaining the manufacturing method of the image pickup device 100 according to the present embodiment. Specifically, each drawing shows the vertical transfer transistor VG of the image pickup device 100 at each stage in the manufacturing process. It is sectional drawing of the gate electrode 200 and the embedded part 202. In these figures, the lower side in the figure is the back surface side of the semiconductor substrate 102, and the upper side in the figure is the front surface side of the semiconductor substrate 102.
  • the embedded portion 202 is formed at the same time as the pixel separating portion 104 to make the depth of the trench of the pixel separating portion 104 and the depth of the embedded portion 202 the same, thereby increasing the number of steps and increasing the number of steps. It is possible to suppress the increase in defects due to trench formation.
  • an oxide film, a silicon nitride (SiN) film, and an oxide film are sequentially laminated on a semiconductor substrate 102 made of a silicon substrate, and a photoresist having a desired pattern is formed on the oxide film. do.
  • the resist is processed to be thin (slimming).
  • the hard mask (HM) is formed by processing the oxide film, the silicon nitride (SiN) film, and the oxide film according to the shape of the thin resist. Form.
  • the semiconductor substrate is dry-etched according to the shape of the hard mask to form a trench.
  • the surface is thermally oxidized by applying heat after removing the resist.
  • the oxide film is embedded in the trench and the surface is flattened by a CMP (Chemical Mechanical Polishing) method.
  • CMP Chemical Mechanical Polishing
  • a photoresist having a desired pattern is formed, and the photoresist is dug into an oxide film according to the shape of the resist to form a trench.
  • the surface of the silicon nitride (SiN) film is sacrificed and oxidized by removing the resist and then annealing the resist.
  • the silicon nitride (SiN) film is removed.
  • various ions are injected into the semiconductor substrate.
  • the resist and the sacrificial oxide film are removed.
  • polysilicon is embedded in the trench as shown in the fourth figure from the left in the lower part of FIG. 24.
  • the embedded portion 202 is formed.
  • the image pickup device 100 according to the embodiment of the present disclosure can be easily and inexpensively manufactured by using the manufacturing process of the existing semiconductor device.
  • FIG. 25 is a schematic diagram for explaining a manufacturing method of the image pickup device 100 according to the modified example of the present embodiment. Specifically, each drawing is a vertical transfer of the image pickup device 100 at each stage in the manufacturing process. It is sectional drawing of the gate electrode 200 and the embedded part 202 of a transistor VG. In these figures, the lower side in the figure is the back surface side of the semiconductor substrate 102, and the upper side in the figure is the front surface side of the semiconductor substrate 102.
  • the embedded portion 202 can be made separately from the pixel separating portion 104 so that the depth of the embedded portion 202 can be made deeper than the depth of the trench of the pixel separating portion 104. By doing so, the embedded portion 202 can modulate the deeper potential of the semiconductor substrate 102.
  • the image pickup device 100 that detects infrared light
  • a fin type vertical transfer transistor VG having a gate electrode having a pair of embedded portions 202a and 202b embedded in the semiconductor substrate 102 is used.
  • the potential can be modulated to a deeper region in the semiconductor substrate 102 as desired. Therefore, according to the present embodiment, it is possible to avoid the occurrence of a potential peak (barrier) in the photodiode PD or in the vicinity of the transfer transistor TG. Therefore, according to the present embodiment, the electric charge generated in the photodiode PD is smoothly transferred toward the stray diffusion region FD without being hindered by the barrier.
  • the conductive type of each semiconductor region described above may be reversed.
  • the present embodiment is applied to an image pickup device that uses holes as charges instead of electrons. It is possible.
  • the semiconductor substrate 102 does not necessarily have to be a silicon substrate, but may be another substrate (for example, an SOI (Silicon On Insulator) substrate, a SiGe substrate, or the like). Further, the semiconductor substrate 102 may have a semiconductor structure or the like formed on such various substrates.
  • SOI Silicon On Insulator
  • the image pickup device 1 is not limited to the image pickup device that captures an image as an image in which the distribution of the incident light amount of visible light is detected.
  • an image pickup device that captures the distribution of incident amounts of infrared rays, X-rays, particles, etc. as an image, and a fingerprint that detects the distribution of other physical quantities such as pressure and capacitance and captures images as an image. It can be applied to an image pickup device (physical quantity distribution detection device) such as a detection sensor.
  • the embodiments of the present disclosure are not limited to being applied to the image pickup apparatus 1, and may be applied to various semiconductor devices used for other purposes.
  • PVD Physical Vapor Deposition
  • CVD Chemical Vapor Deposition
  • the law etc. can be mentioned.
  • the PVD method includes a vacuum vapor deposition method using resistance heating or high frequency heating, an EB (electron beam) vapor deposition method, various sputtering methods (magnetron sputtering method, RF (Radio Frequency) -DC (Direct Current) coupled bias sputtering method, and the like.
  • ECR Electro Cyclotron Precision
  • sputtering method opposed target sputtering method, high frequency sputtering method, etc.
  • ion plating method laser ablation method, molecular beam epitaxy (MBE) method, laser transfer method, etc.
  • MBE molecular beam epitaxy
  • examples of the CVD method include a plasma CVD method, a thermal CVD method, an MO (Metal Organic) CVD method, an optical CVD method, and the like.
  • electrolytic plating method, electroless plating method spin coating method; immersion method; casting method; microcontact printing method; drop casting method; screen printing method, inkjet printing method, offset printing method, gravure printing.
  • Various printing methods such as method and flexographic printing method; stamp method; spray method; air doctor coater method, blade coater method, rod coater method, knife coater method, squeeze coater method, reverse roll coater method, transfer roll coater method, gravure coater method. , Kiss coater method, cast coater method, spray coater method, slit orifice coater method, calendar coater method and various other coating methods can be mentioned.
  • the patterning method for each layer include chemical etching such as shadow mask, laser transfer, and photolithography, and physical etching by ultraviolet rays, laser, and the like.
  • examples of the flattening technique include a CMP (Chemical Mechanical Polishing) method, a laser flattening method, a reflow method, and the like. That is, the image pickup device 100 according to the embodiment of the present disclosure can be easily and inexpensively manufactured by using the manufacturing process of the existing semiconductor device.
  • the image pickup device 1 as described above is applied to various electronic devices such as an image pickup system such as a digital still camera or a digital video camera, a mobile phone having an image pickup function, or another device having an image pickup function. can do.
  • an image pickup system such as a digital still camera or a digital video camera
  • a mobile phone having an image pickup function or another device having an image pickup function. can do.
  • FIG. 26 is a block diagram showing a configuration example of an electronic device 10 equipped with an image pickup device 1.
  • the electronic device 10 includes an optical system 12, an image pickup device 1, and a DSP (Digital Signal Processor) 14, and the DSP 14, the display device 15, the operation system 16, and the memory 18 are provided via the bus 17.
  • the recording device 19, and the power supply system 20 are connected and configured, and still images and moving images can be captured.
  • the optical system 12 is configured to have one or a plurality of lenses, and guides the image light (incident light) from the subject to the image pickup device 1 to form an image on the light receiving surface (sensor unit) of the image pickup device 1.
  • the image pickup device 1 As the image pickup device 1, the image pickup device 1 of any of the above-mentioned configuration examples is applied. Electrons are accumulated in the image pickup apparatus 1 for a certain period of time according to the image formed on the light receiving surface via the optical system 12. Then, a signal corresponding to the electrons stored in the image pickup apparatus 1 is supplied to the DSP 14.
  • the DSP 14 performs various signal processing on the signal from the image pickup apparatus 1 to acquire an image, and temporarily stores the image data in the memory 18.
  • the image data stored in the memory 18 is recorded in the recording device 19 or supplied to the display device 15 to display the image.
  • the operation system 16 receives various operations by the user and supplies an operation signal to each block of the electronic device 10, and the power supply system 20 supplies the electric power necessary for driving each block of the electronic device 10.
  • FIG. 27 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technique according to the present disclosure (the present technique) can be applied.
  • FIG. 27 illustrates how the surgeon (doctor) 11131 is performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000.
  • the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as an abdominal tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100.
  • a cart 11200 equipped with various devices for endoscopic surgery.
  • the endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101.
  • the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.
  • An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101.
  • a light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens.
  • the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image sensor are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image sensor by the optical system.
  • the observation light is photoelectrically converted by the image pickup device, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 11201.
  • CCU Camera Control Unit
  • the CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.
  • the light source device 11203 is composed of, for example, a light source such as an LED (Light Emitting Diode), and supplies irradiation light for photographing an operating part or the like to the endoscope 11100.
  • a light source such as an LED (Light Emitting Diode)
  • LED Light Emitting Diode
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
  • the treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for cauterizing, incising, sealing a blood vessel, or the like.
  • the pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator. Is sent.
  • the recorder 11207 is a device capable of recording various information related to surgery.
  • the printer 11208 is a device capable of printing various information related to surgery in various formats such as text, images, and graphs.
  • the light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof.
  • a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out.
  • the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to correspond to each of RGB. It is also possible to capture the image in a time-division manner. According to this method, a color image can be obtained without providing a color filter in the image pickup device.
  • the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals.
  • the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change of the light intensity to acquire an image in time division and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
  • the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue, the surface layer of the mucous membrane is irradiated with light in a narrower band than the irradiation light (that is, white light) during normal observation.
  • a so-called narrow band imaging is performed in which a predetermined tissue such as a blood vessel is photographed with high contrast.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light.
  • the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating the excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 may be configured to be capable of supplying narrowband light and / or excitation light corresponding to such special light observation.
  • FIG. 28 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG. 27.
  • the camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and CCU11201 are communicably connected to each other by a transmission cable 11400.
  • the lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101.
  • the observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the image pickup element constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type).
  • each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them.
  • the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to the 3D (dimensional) display, respectively.
  • the 3D display enables the operator 11131 to more accurately grasp the depth of the living tissue in the surgical site.
  • a plurality of lens units 11401 may be provided corresponding to each image pickup element.
  • the image pickup unit 11402 does not necessarily have to be provided on the camera head 11102.
  • the image pickup unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the drive unit 11403 is composed of an actuator, and the zoom lens and the focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the image pickup unit 11402 can be adjusted as appropriate.
  • the communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU11201.
  • the communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image. Contains information about the condition.
  • the image pickup conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU11201 based on the acquired image signal. good.
  • the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, an AF (Auto Focus) function, and an AWB (Auto White Balance) function.
  • the camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102.
  • Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
  • the image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques.
  • the control unit 11413 detects a surgical tool such as forceps, a specific biological part, bleeding, mist when using the energy treatment tool 11112, etc. by detecting the shape, color, etc. of the edge of the object included in the captured image. Can be recognized.
  • the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can surely proceed with the surgery.
  • the transmission cable 11400 connecting the camera head 11102 and CCU11201 is an electric signal cable corresponding to electric signal communication, an optical fiber corresponding to optical communication, or a composite cable thereof.
  • the communication is performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.
  • the above is an example of an endoscopic surgery system to which the technique according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to, for example, the endoscope 11100, the image pickup unit 11402 of the camera head 11102, the image processing unit 11412 of the CCU 11201, and the like among the configurations described above.
  • the technique according to the present disclosure may be applied to other, for example, a microscopic surgery system.
  • the technique according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. You may.
  • FIG. 29 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technique according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are shown as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 has a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating braking force of the vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, turn signals or fog lamps.
  • the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the image pickup unit 12031 is connected to the vehicle outside information detection unit 12030.
  • the vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image.
  • the out-of-vehicle information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
  • the image pickup unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the image pickup unit 12031 may be visible light or invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects the in-vehicle information.
  • a driver state detection unit 12041 that detects a driver's state is connected to the vehicle interior information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver has fallen asleep.
  • the microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit.
  • a control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generating device, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform coordinated control for the purpose of automatic driving that runs autonomously without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information outside the vehicle acquired by the vehicle outside information detection unit 12030.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 12052 transmits an output signal of at least one of audio and image to an output device capable of visually or audibly notifying information to the passenger or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an onboard display and a head-up display.
  • FIG. 30 is a diagram showing an example of the installation position of the image pickup unit 12031.
  • the image pickup unit 12031 has image pickup units 12101, 12102, 12103, 12104, and 12105.
  • the image pickup units 12101, 12102, 12103, 12104, 12105 are provided at positions such as, for example, the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100.
  • the image pickup unit 12101 provided in the front nose and the image pickup section 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the image pickup units 12102 and 12103 provided in the side mirror mainly acquire images of the side of the vehicle 12100.
  • the image pickup unit 12104 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the image pickup unit 12105 provided on the upper part of the windshield in the vehicle interior is mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 30 shows an example of the shooting range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging range of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • the imaging range 12114 indicates the imaging range.
  • the imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 can be obtained.
  • At least one of the image pickup units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the image pickup units 12101 to 12104 may be a stereo camera including a plurality of image pickup elements, or may be an image pickup element having pixels for phase difference detection.
  • the microcomputer 12051 has a distance to each three-dimensional object within the imaging range 12111 to 12114 based on the distance information obtained from the imaging units 12101 to 12104, and a temporal change of this distance (relative speed with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance in front of the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like that autonomously travels without relying on the driver's operation.
  • automatic brake control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the image pickup units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
  • At least one of the image pickup units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging unit 12101 to 12104.
  • recognition of a pedestrian is, for example, a procedure for extracting feature points in an image captured by an image pickup unit 12101 to 12104 as an infrared camera, and a pattern matching process for a series of feature points showing the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine.
  • the audio image output unit 12052 determines the square contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the above is an example of a vehicle control system to which the technique according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to the image pickup unit 12031 or the like among the configurations described above.
  • the present technology can also have the following configurations.
  • a photoelectric conversion unit provided in the semiconductor substrate that converts light into electric charges
  • a charge holding portion provided in the semiconductor substrate and holding the charge
  • a transfer transistor that transfers the charge from the photoelectric conversion unit to the charge holding unit, and Equipped with The transfer transistor has a gate electrode having a pair of first embedded gate portions embedded in the semiconductor substrate.
  • Light receiving element When viewed from above the semiconductor substrate
  • the photoelectric conversion unit is provided in the central portion of the light receiving element, and is provided.
  • the charge holding portion is provided at the end of the light receiving element and is provided.
  • the transfer transistor is provided between the photoelectric conversion unit and the charge holding unit.
  • the light receiving element according to (1) above.
  • each of the pair of first embedded gate portions is provided in a substantially rectangular shape in a cross section obtained by cutting the light receiving element along a direction parallel to the surface of the semiconductor substrate. .. (4) The light receiving element according to (2) above, wherein each of the pair of first embedded gate portions is provided in a substantially elliptical shape in a cross section obtained by cutting the light receiving element along a direction parallel to the surface of the semiconductor substrate. .. (5) (2) The above (2), in which the light receiving element is cut along a direction parallel to the surface of the semiconductor substrate, each of the pair of first embedded gate portions is provided so that the center line draws an arc.
  • the distance between one first embedded gate portion and the other first embedded gate portion is from the center of the light receiving element to the center of the charge holding portion.
  • a part of the side surface of the pair of first embedded gate portions is covered with the first oxide film. Any of the above (1) to (8), the rest of the side surfaces of the pair of first embedded gate portions is covered with a second oxide film having a thickness larger than that of the first oxide film.
  • the light receiving element according to one. (10) The light receiving element according to (9) above, wherein the second oxide film covers the side surface of the first embedded gate portion of the one, which is located on the side opposite to the side surface facing the first embedded gate portion of the other. .. (11) Further, a pixel separation unit surrounding the light receiving element is provided. The light receiving element according to (10) above, wherein the second oxide film is provided so as to spread between the pair of first embedded gate portions and the pixel separation portion.
  • the gate electrode of the transfer transistor is any one of (2) to (12) above, further comprising a second embedded gate portion embedded in the semiconductor substrate between the pair of first embedded gate portions.
  • the second embedded gate portion When viewed from above the semiconductor substrate, the second embedded gate portion is located closer to the charge holding portion than the center of the first embedded gate portion (13) to (15).
  • the light receiving element according to any one of. (18) A light receiving device equipped with a plurality of light receiving elements.
  • Each of the light receiving elements is With a semiconductor substrate, A photoelectric conversion unit provided in the semiconductor substrate that converts light into electric charges, A charge holding portion provided in the semiconductor substrate and holding the charge, A transfer transistor that transfers the charge from the photoelectric conversion unit to the charge holding unit, and Have, The transfer transistor has a gate electrode having a pair of first embedded gate portions embedded in the semiconductor substrate.
  • Light receiving device (19) The light receiving device according to (18) above, wherein the plurality of light receiving elements share the charge holding portion. (20) An electronic device equipped with a light receiving device having a plurality of light receiving elements.
  • Each of the light receiving elements is With a semiconductor substrate, A photoelectric conversion unit provided in the semiconductor substrate that converts light into electric charges, A charge holding portion provided in the semiconductor substrate and holding the charge, A transfer transistor that transfers the charge from the photoelectric conversion unit to the charge holding unit, and Have,
  • the transfer transistor has a gate electrode having a pair of first embedded gate portions embedded in the semiconductor substrate. Electronics.
  • Imaging device 10 Electronic equipment 12 Optical system 14 DSP 15 Display device 16 Operation system 17 Bus 18 Memory 19 Recording device 20 Power supply system 30 Pixel area 32 Vertical drive circuit unit 34 Column signal processing circuit unit 36 Horizontal drive circuit unit 38 Output circuit unit 40 Control circuit unit 42 Pixel drive wiring 44 Vertical signal Wire 46 Horizontal signal line 48 Input / output terminal 100, 100a, 100b Imaging element 102 Semiconductor substrate 104 Pixel separation part 200 Gate electrode 202, 202a, 202b, 210 Embedded part 204, 206, 212, 402 Insulation film 300 On-chip lens 302 Flat Chemical film 304 Anti-reflection film 306 Light-shielding film 400 Wiring layer 404 Wiring AMP Amplification transistor FC Capacity FD Floating diffusion region FDG Conversion efficiency switching transistor PD Photo diode RST Reset transistor SEL Select transistor TG Transfer transistor VDD Power supply potential VG Vertical transfer transistor VSL signal line

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EP21903235.6A EP4261900B1 (en) 2020-12-11 2021-11-30 Light-receiving element, light-receiving device, and electronic apparatus
DE112021006412.6T DE112021006412T5 (de) 2020-12-11 2021-11-30 Lichtempfangselement, lichtempfangsvorrichtung und elektronische vorrichtung
US18/255,533 US20240021632A1 (en) 2020-12-11 2021-11-30 Light receiving element, light receiving device, and electronic device
CN202180071238.1A CN116438664A (zh) 2020-12-11 2021-11-30 光接收元件、光接收装置和电子设备
KR1020237017424A KR20230117114A (ko) 2020-12-11 2021-11-30 수광 소자, 수광 장치 및 전자 기기
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CN116438664A (zh) 2023-07-14
US20240021632A1 (en) 2024-01-18
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