WO2022116564A1 - 一种mems探针激光刻蚀方法 - Google Patents

一种mems探针激光刻蚀方法 Download PDF

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WO2022116564A1
WO2022116564A1 PCT/CN2021/108764 CN2021108764W WO2022116564A1 WO 2022116564 A1 WO2022116564 A1 WO 2022116564A1 CN 2021108764 W CN2021108764 W CN 2021108764W WO 2022116564 A1 WO2022116564 A1 WO 2022116564A1
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center
laser etching
distance
plate
probe laser
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PCT/CN2021/108764
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English (en)
French (fr)
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于海超
周明
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强一半导体（苏州）有限公司
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Priority to US18/039,570 priority Critical patent/US20240001485A1/en
Publication of WO2022116564A1 publication Critical patent/WO2022116564A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0652—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06744—Microprobes, i.e. having dimensions as IC details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a MEMS probe laser etching method, which belongs to the technical field of semiconductor processing and testing.
  • the probe card is a test interface used to test bare chips. By directly contacting the probes on the probe card with the pads or bumps on the IC chip, the signal of the IC chip is drawn, and then the IC chip is written with the test instrument. Input the test signal, and then realize the test before the IC chip is packaged.
  • probe One of the core structures of the probe card is the probe. At present, the most widely used methods for making probes are bottom-up and top-down.
  • CN201010000429.2 a micro-probe structure and a manufacturing method thereof, using the lithography, electroplating, planarization and etching techniques of the semiconductor manufacturing process, and replacing the electroplating of the second sacrificial layer metal with a polymer, on a substrate with space conversion
  • a micro-metal structure with two or more layers is formed successively, thereby obtaining a micro-probe structure with more than two layers of the micro-metal structure.
  • each layer of the micro-metal structure is composed of a material
  • the More than two layers of micro-metal structures can be composed of the same material and/or different materials.
  • the micro-probe structure made by the above-mentioned micro-probe structure manufacturing method has the structural design of strengthening the cantilever beam, is suitable for the components used for testing various electronic components, can be used as the test head of the probe card, and effectively increases the Test bandwidth, reduce spacing, and improve side-by-side testing capabilities.
  • an electroplating process for a probe for an electrical connector comprising the following processing steps: step A, pre-treating the probe to remove oil stains; step B, activating the probe to activate the oxide film on the surface of the probe; Step C, plating a layer of copper film plating on the surface of the probe; Step D, plating a layer of gold film plating on the surface of the copper film plating; Step E, plating a layer of ruthenium film plating on the surface of the gold film plating; Step F, Post-treatment is performed on the surface of the ruthenium film coating, and the surface is sealed, washed and dried.
  • the electroplating process has the advantages of low raw material cost, low processing difficulty, low production cost, and can meet the high requirements of the appearance quality of electrical connector products.
  • the pre-treated voltage-equalizing electrode probe is put into an electroplating solution for platinum-plating treatment, and the components of the electroplating solution are It is: sodium tetrachloroplatinate or sodium chloroplatinate, disodium ethylenediaminetetraacetate or tetrasodium ethylenediaminetetraacetate; the equalizing electrode probe is used as the working electrode, the ring platinum sheet is used as the counter electrode, and the The voltage-equalizing electrode probe is placed in the middle of the ring-shaped platinum plate; under the appropriate temperature of the plating solution, pH value of the plating solution and electroplating current, the plating layer on the surface of the voltage-equalizing electrode probe is made to a fixed thickness.
  • the electroplating process is simple and easy to control.
  • the chelating agent in the electroplating solution is used to limit the activity of platinum ions and their diffusion coefficient in the electroplating solution, thereby controlling the reduction reaction speed of platinum, and then controlling the surface finish of the platinum deposition layer to achieve a mirror surface.
  • the bottom-up electroplating process uses a large number of chemical raw materials, it will cause environmental problems. More importantly, the electroplating accuracy is not easy to control, and it is extremely difficult to manufacture micron or even sub-micron probes.
  • the probe tape to be processed is bonded to the surface of the wafer, and then a photoresist mask is prepared by a photolithography process, and then a dry or wet process is used for etching, which can realize the fabrication of small-sized and high-precision probes.
  • a photoresist mask is prepared by a photolithography process, and then a dry or wet process is used for etching, which can realize the fabrication of small-sized and high-precision probes.
  • the cost of the process equipment used in this process will increase exponentially. Therefore, the production cost of small-size and high-precision probes is extremely high.
  • the present invention discloses a MEMS probe laser etching method, and with the MEMS probe laser etching device of the present invention, not only the etching precision is higher, but also the etching distance can be continuously adjusted.
  • a MEMS probe laser etching device according to the propagation direction of light, an arc light source, a spiral through slot plate, a straight through slot plate, an objective lens, a single crystal silicon wafer and a four-dimensional stage are arranged in sequence;
  • the distance from each point of the arc-shaped light source to the center of the objective lens is the same, that is, the shape of the arc-shaped light source is a circular arc with the center of the objective lens as the center of the circle; the tangent of each point of the arc-shaped light source is perpendicular to the line connecting the point to the center of the objective lens;
  • the helical through-groove plate comprises a first base plate with a helical through-groove and a first side edge with an annular cross-section.
  • the outer surface of the side edge is provided with teeth to form a gear structure.
  • the line satisfies the following relationship:
  • l 0 is the maximum distance between the helical line and the center of the first base plate, and when the distance from the intersection of the spiral through groove and the straight through groove to the center of the first base plate is the maximum distance, the position of the first base plate is defined as the initial position;
  • k is a coefficient with a dimension of length/radian, ⁇ is a radian, and l( ⁇ ) represents the distance from the intersection of the spiral through groove and the straight through groove to the center of the first base plate after the helix rotates ⁇ from the initial position;
  • the straight through-slot plate comprises a second bottom plate with a straight through-slot and a second side edge with an annular cross-section, the inner diameter of the second side edge is larger than the outer diameter of the first side edge, the The upper surface of the second base plate is in close contact with the lower surface of the first base plate;
  • the upper surface of the single crystal silicon wafer and the second bottom plate are respectively located on the image plane and the object plane of the objective lens, and the single crystal silicon wafer can complete four-dimensional motion under the bearing of the four-dimensional stage;
  • the four-dimensional stage can complete three-dimensional translation and one-dimensional rotation, and the rotation is performed in the plane determined by the arc light source and the optical axis.
  • a scraper is arranged around the straight through groove of the second base plate, and a plurality of annular grooves concentric with the second base plate are arranged on the upper surface of the second base plate.
  • the scraper around the straight through groove; the upper surface of the second bottom plate is also provided with a straight groove in the radial direction, the annular groove and the straight groove are cross-connected, and the annular groove and the straight groove are filled with lubricating oil, and the lubricating oil flows from the first Drop between the side and the second side.
  • the first side is externally meshed with a gear, the gear is controlled to rotate by a motor, the motor is connected to a controller, and the controller is connected to a four-dimensional stage.
  • a transmission structure is formed between the first side and the gear.
  • Pinhole structure for MEMS probe laser etching device including spiral through-slotted plate and straight through-slotted plate;
  • the helical through-groove plate comprises a first base plate with a helical through-groove and a first side edge with an annular cross-section.
  • the outer surface of the side edge is provided with teeth to form a gear structure.
  • the line satisfies the following relationship:
  • l 0 is the maximum distance between the helical line and the center of the first base plate, and when the distance from the intersection of the spiral through groove and the straight through groove to the center of the first base plate is the maximum distance, the position of the first base plate is defined as the initial position;
  • k is a coefficient with a dimension of length/radian, ⁇ is a radian, and l( ⁇ ) represents the distance from the intersection of the spiral through groove and the straight through groove to the center of the first base plate after the helix rotates ⁇ from the initial position;
  • the straight through-slot plate comprises a second bottom plate with a straight through-slot and a second side edge with an annular cross-section, the inner diameter of the second side edge is larger than the outer diameter of the first side edge, the The upper surface of the second base plate is in close contact with the lower surface of the first base plate;
  • the upper surface of the single crystal silicon wafer and the second base plate are respectively located on the image plane and the object plane of the objective lens, and the single crystal silicon wafer can complete four-dimensional motion under the bearing of the four-dimensional stage;
  • the four-dimensional stage can complete three-dimensional translation and one-dimensional rotation, and the rotation is performed in the plane determined by the arc light source and the optical axis.
  • a MEMS probe laser etching method comprising the following steps:
  • Step a parameter calculation
  • the stepping angle ⁇ of the motor is obtained as:
  • k is the coefficient of the length/radian dimension of the helical line of the helical through groove of the first base plate
  • l 1 is the distance from the second base plate to the center of the objective lens
  • l 2 is the distance from the upper surface of the single crystal silicon wafer to the center of the objective lens
  • d 1 is the index circle diameter of the first side
  • d 2 is the index circle diameter of the gear
  • Step b initial position adjustment
  • Step b1 rotate the spiral channel plate to the initial position, and move the first etching point to the optical axis; step b2, adjust the four-dimensional stage:
  • l 0 is the maximum distance between the helix and the center of the first base plate
  • h 1 is the thickness of the single crystal silicon wafer
  • h 2 is the distance from the center of the rotation axis of the four-dimensional stage to the upper surface
  • Step c laser etching
  • Step d progress judgment
  • Step e Adjust the 4D stage and motor
  • the 4D stage moves down:
  • the four-dimensional stage rotates clockwise:
  • ⁇ 1 is the angle between the beam and the optical axis at the current etching point
  • ⁇ 2 is the angle between the beam and the optical axis at the next etching point
  • the above-mentioned MEMS probe laser etching method is applied to a MEMS probe laser etching device.
  • a MEMS probe laser etching motor and a four-dimensional stage driving method the step angle of the motor is obtained from the etching distance d of a single crystal silicon wafer, the four-dimensional stage moves up or down a distance, and moves left or right a distance , turn the angle clockwise or counterclockwise.
  • the etching distance of the single crystal silicon wafer is d, then:
  • the stepping angle ⁇ of the motor is:
  • the 4D stage rotates clockwise or counterclockwise:
  • k is the coefficient of the length/radian dimension of the helical line of the helical through groove of the first base plate
  • l 1 is the distance from the second base plate to the center of the objective lens
  • l 2 is the distance from the upper surface of the single crystal silicon wafer to the center of the objective lens
  • d 1 is the index circle diameter of the first side
  • d 2 is the index circle diameter of the gear
  • h 1 is the thickness of the single crystal silicon wafer
  • h 2 is the distance from the center of the rotation axis of the four-dimensional stage to the upper surface
  • ⁇ 1 is the angle between the beam and the optical axis at the current etching point
  • ⁇ 2 is the angle between the beam and the optical axis at the next etching point
  • the moving direction and rotation direction of the four-dimensional stage are determined by the rotation direction of the motor.
  • the above-mentioned MEMS probe laser etching motor and four-dimensional stage driving method are applied to a MEMS probe laser etching device.
  • the MEMS probe laser etching device uses an optical focal structure.
  • the spiral through-slot plate is replaced by the upper-character through-slot plate
  • the straight through-slot plate is replaced by the next-character through slot plate.
  • replace the single crystal silicon wafer with a flat mirror of the same thickness the thickness of the first bottom plate in the above-mentioned through-slot plate and the spiral through-slot plate is the same, and the next through-slot plate and the straight through-slot plate have the same thickness.
  • the thickness of the second bottom plate is the same, the thickness of the plane mirror is the same as that of the single crystal silicon wafer, and the upper surface of the upper channel plate is in close contact with the lower surface of the next channel plate; between the next channel plate and the objective lens , a prism is arranged, and an image sensor is arranged on the side edge of the prism.
  • the distance from the lower surface of the next slot plate to the prism is the same as the distance from the image surface of the image sensor to the prism.
  • the optical collimation method for MEMS probe laser etching device includes the following steps:
  • Step a replace the components
  • the spiral through-slot plate is replaced by the upper-character through-slot plate, the straight through-slot plate is replaced by the next-character through-slot plate, and the single crystal silicon wafer is replaced by a flat mirror replace;
  • a prism is arranged between the channel plate and the objective lens, and an image sensor is arranged at the side edge of the prism.
  • the distance from the highest point of the arc light source to the prism is the same as the image surface of the image sensor to the prism. the same distance;
  • Step b Data acquisition
  • the four-dimensional stage moves up and down the full range for one cycle, and obtains a series of on-focus and defocused spot images on the image sensor, and records the mapping relationship between the position of the four-dimensional stage in the up and down direction and the image;
  • the spot diameter is obtained, and the mapping relationship between the position of the four-dimensional stage in the up-down direction and the spot diameter is established;
  • the above-mentioned MEMS probe laser etching device uses an optical aligning method.
  • step c according to the aligning and defocusing spot images obtained by the image sensor, the spot diameter is obtained. Pixels with a grayscale less than the grayscale threshold are set to 0, and pixels greater than the grayscale threshold are set to 255, and then the image obtained after processing is circularly fitted to fit a circular light spot, and finally the circular light spot is determined. spot diameter.
  • the above-mentioned MEMS probe laser etching device uses an optical aligning method.
  • step c according to the aligning and defocusing spot images obtained by the image sensor, the spot diameter is obtained, which is achieved by the following method: in the quasi-focusing and defocusing spot images , select a fixed area with the center of the light spot as the center, sum the grayscale values of all pixels in the fixed area, and use the reciprocal of the obtained calculation result as the diameter of the light spot.
  • the shape of the arc light source is an arc with the center of the objective lens as the center of the circle.
  • the tangent line of each point of the arc light source is perpendicular to the line connecting the point to the center of the objective lens, so it can provide a light beam directly irradiating the pinhole, avoiding the special structure of the present invention, which is affected by the thickness of the first base plate and the second base plate. Influenced by the uneven energy distribution of the beam at different positions, the problem of uneven etching depth is caused.
  • the pinhole structure forming the point light source is composed of a spiral through-slotted plate and a straight through-slotted plate, and the pinhole position is changed by the rotation of the spiral through-slotted plate, Under this structure, the pinhole position can be continuously changed to adapt to probes with different etching pitches, and the applicability is wider; more importantly, by matching the exposure time of the arc light source and the rotation of the spiral slot plate The step angle can realize the dynamic adjustment of the etching pitch, and can etch the probes with any variable pitch.
  • the etching depth can be adjusted by changing the energy of the arc light source; the etching speed can be adjusted by changing the rotational speed of the spiral through-slot plate; Meet the etching requirements under different parameters.
  • the MEMS probe laser etching device of the present invention although compared with the traditional unidirectional etching method, because the light beam passes through the pinhole from the arc light source, it has different irradiation angles at different positions, but Since a four-dimensional stage is provided, and the thinking stage can be adjusted according to the etching position, vertical etching can be achieved no matter where the pinholes forming the point light source are located, thereby ensuring the etching accuracy.
  • a special optical focusing structure for the MEMS probe laser etching device is also provided, and an optical focusing method for the MEMS probe laser etching device is designed.
  • the four-dimensional stage is located on the object plane and the image plane of the objective lens respectively, so that the entire device can be adjusted before etching to ensure that the relationship between the pinhole structure and the single crystal silicon wafer strictly satisfies the object-image relationship, thereby ensuring the etching accuracy.
  • the larger the diameter of the first side indexing circle, the smaller the gear indexing circle diameter, the higher the accuracy, but the slower the speed, and the first side indexing circle is smaller.
  • FIG. 1 is a schematic structural diagram 1 of the MEMS probe laser etching device of the present invention.
  • FIG. 2 is a schematic structural diagram of a spiral through-groove plate in the MEMS probe laser etching device of the present invention.
  • FIG. 3 is a schematic structural diagram of a straight through-groove plate in the MEMS probe laser etching device of the present invention.
  • FIG. 4 is a schematic structural diagram of a pinhole formed after a spiral through-slot plate and a straight through-slot plate are stacked together.
  • FIG. 5 is a schematic structural diagram of the second base plate.
  • FIG. 6 is a second structural schematic diagram of the MEMS probe laser etching device of the present invention.
  • FIG. 7 is a flow chart of the MEMS probe laser etching method of the present invention.
  • FIG. 8 is a schematic diagram of the relative position of each component after the first step of the initial position adjustment process is completed.
  • FIG. 9 is a relative positional relationship diagram before and after the adjustment of the four-dimensional stage in the second step of the initial position adjustment process.
  • FIG. 10 is a relative positional relationship diagram before and after the adjustment of the four-dimensional stage between two adjacent etchings.
  • FIG. 11 is a schematic structural diagram of an optical collimator structure for a MEMS probe laser etching device of the present invention.
  • FIG. 12 is a flow chart of an optical collimation method for a MEMS probe laser etching device of the present invention.
  • 1 arc light source 2 spiral channel plate, 2-1 first bottom plate, 2-2 first side, 3 straight channel plate, 3-1 second bottom plate, 3-2 second side, 4 objective lenses, 5 single crystal silicon wafers, 6 four-dimensional stages, 7 gears, 8 motors, 9 controllers, 10 prisms, 11 image sensors, 21 upper slot plates, 31 lower slot plates, 51 plane reflections mirror.
  • FIG. 1 The schematic diagram of the structure of the MEMS probe laser etching device in this embodiment is shown in FIG. 1 .
  • an arc light source 1 and a spiral through-slot plate 2 are arranged in sequence.
  • straight through slot plate 3 objective lens 4, single crystal silicon wafer 5 and four-dimensional stage 6;
  • the distance from each point of the arc light source 1 to the center of the objective lens 4 is the same, that is, the shape of the arc light source 1 is an arc with the center of the objective lens 4 as the center; the tangent of each point of the arc light source 1 is the same as the point to the objective lens 4.
  • the line connecting the center is vertical;
  • FIG. 2 The schematic diagram of the structure of the spiral through groove plate 2 is shown in FIG. 2 , including a first bottom plate 2-1 with a spiral through groove and a first side 2-2 with a circular cross-section.
  • the side 2- The outer surface of 2 is provided with teeth to form a gear structure, and the helix of the helical through groove satisfies the following relationship:
  • l 0 is the maximum distance between the helical line and the center of the first base plate 2-1.
  • the first base plate 2 is defined.
  • the position where -1 is located is the initial position;
  • k is the coefficient, which has the dimension of length/radian,
  • ⁇ is the radian, and
  • l( ⁇ ) indicates that after the spiral line rotates ⁇ from the initial position, the intersection of the spiral channel and the straight channel will reach the first The distance from the center of the bottom plate 2-1;
  • FIG. 3 The schematic diagram of the structure of the straight through-slot plate 3 is shown in FIG. 3 , including a second bottom plate 3-1 with a straight through-slot and a second side 3-2 with a circular cross-section.
  • the second side The inner circle diameter of 3-2 is larger than the outer circle diameter of the first side 2-2, and the upper surface of the second base plate 3-1 is in close contact with the lower surface of the first base plate 2-1;
  • the upper surface of the single crystal silicon wafer 5 and the second bottom plate 3-1 are respectively located on the image plane and the object plane of the objective lens 4, and the single crystal silicon wafer 5 can complete the four-dimensional motion under the bearing of the four-dimensional stage 6;
  • the four-dimensional stage 6 can complete three-dimensional translation and one-dimensional rotation, and the rotation is performed in the plane determined by the arc light source 1 and the optical axis.
  • the MEMS probe laser etching device in this embodiment is further defined on the basis of the specific embodiment 1: a scraper is arranged around the straight through groove of the second base plate 3-1, and a scraper is arranged on the upper surface of the second base plate 3-1 There are a plurality of annular grooves that are concentric with the second bottom plate 3-1, and the annular grooves start and end with scrapers around the straight through grooves; the upper surface of the second bottom plate 3-1 is also provided with radial linear grooves, and the annular grooves Cross-connected with the straight groove, the annular groove and the straight groove are filled with lubricating oil. As shown in FIG. 5 , the lubricating oil drips in from between the first side 2-2 and the second side 3-2.
  • the MEMS probe laser etching device in this embodiment is further defined on the basis of the first or second embodiment: the structure of the MEMS probe laser etching device, as shown in FIG. 6 , the first A gear 7 is externally engaged with the side 2 - 2 , and the gear is controlled to rotate by a motor 8 , the motor 8 is connected to a controller 9 , and the controller 9 is connected to the four-dimensional stage 6 .
  • the MEMS probe laser etching device in this embodiment is further defined on the basis of the third embodiment: a transmission structure is formed between the first side 2 - 2 and the gear 7 .
  • the pinhole structure facing the MEMS probe laser etching device in this embodiment includes a spiral through-slotted plate 2 and a straight through-slotted plate 3;
  • FIG. 2 The schematic diagram of the structure of the spiral through groove plate 2 is shown in FIG. 2 , including a first bottom plate 2-1 with a spiral through groove and a first side 2-2 with a circular cross-section.
  • the side 2- The outer surface of 2 is provided with teeth to form a gear structure, and the helix of the helical through groove satisfies the following relationship:
  • l 0 is the maximum distance between the helical line and the center of the first base plate 2-1.
  • the first base plate 2 is defined.
  • the position where -1 is located is the initial position;
  • k is the coefficient, which has the dimension of length/radian,
  • ⁇ is the radian, and
  • l( ⁇ ) indicates that after the spiral line rotates ⁇ from the initial position, the intersection of the spiral channel and the straight channel will reach the first The distance from the center of the bottom plate 2-1;
  • FIG. 3 The schematic diagram of the structure of the straight through-slot plate 3 is shown in FIG. 3 , including a second bottom plate 3-1 with a straight through-slot and a second side 3-2 with a circular cross-section.
  • the second side The inner circle diameter of 3-2 is larger than the outer circle diameter of the first side 2-2, and the upper surface of the second base plate 3-1 is in close contact with the lower surface of the first base plate 2-1;
  • a scraper is arranged around the straight through groove of the second bottom plate 3-1.
  • the upper surface of the second bottom plate 3-1 is provided with a plurality of annular grooves that are concentric with the second bottom plate 3-1.
  • the scraper around the groove; the upper surface of the second bottom plate 3-1 is also provided with a linear groove in the radial direction, the annular groove and the linear groove are cross-connected, and the annular groove and the linear groove are filled with lubricating oil, as shown in Figure 5, The lubricating oil drips in from between the first side 2-2 and the second side 3-2.
  • the MEMS probe laser etching method in this embodiment is implemented on the MEMS probe laser etching device in the first embodiment, the second embodiment, the third embodiment or the fourth embodiment.
  • the MEMS probe laser etching method includes the following steps:
  • Step a parameter calculation
  • the stepping angle ⁇ of the motor 8 is obtained as:
  • k is the coefficient of the length/radian dimension of the helical line of the first base plate 2-1;
  • l 1 is the distance from the second base plate 3-1 to the center of the objective lens 4;
  • l 2 is the distance from the upper surface of the single crystal silicon wafer 5 to the center of the objective lens 4;
  • d 1 is the index circle diameter of the first side 2-2;
  • d 2 is the index circle diameter of the gear 7;
  • Step b initial position adjustment
  • Step b1 rotate the spiral channel plate 2 to the initial position, and move the first etching point to the optical axis, as shown in Figure 8;
  • Step b2 adjust the four-dimensional stage 6:
  • l 0 is the maximum distance between the spiral line and the center of the first base plate 2-1;
  • h 1 is the thickness of the single crystal silicon wafer 5;
  • h 2 is the distance from the center of the 6-axis rotation axis of the four-dimensional stage to the upper surface
  • Step c laser etching
  • Step d progress judgment
  • Step e adjust the four-dimensional stage 6 and the motor 8
  • ⁇ 1 is the angle between the beam and the optical axis at the current etching point
  • ⁇ 2 is the angle between the beam and the optical axis at the next etching point
  • the MEMS probe laser etching motor and the four-dimensional stage driving method in this embodiment are implemented on the MEMS probe laser etching device in the first embodiment, the second embodiment, the third embodiment or the fourth embodiment.
  • the MEMS probe laser etching motor and the four-dimensional stage driving method the step angle of the motor 8 is obtained from the etching distance d of the single crystal silicon wafer 5, and the four-dimensional stage 6 moves up or down the distance, left or to the left. Move the distance to the right, turn the angle clockwise or counterclockwise.
  • the MEMS probe laser etching motor and the four-dimensional stage driving method in this embodiment are implemented on the MEMS probe laser etching device in the first embodiment, the second embodiment, the third embodiment or the fourth embodiment; And on the basis of the specific embodiment six, it is further limited:
  • the etching pitch of the single crystal silicon wafer 5 is d, then:
  • the stepping angle ⁇ of the motor 8 is:
  • Four-dimensional stage 6 rotates clockwise or counterclockwise:
  • k is the coefficient of the length/radian dimension of the helical line of the first base plate 2-1;
  • l 1 is the distance from the second base plate 3-1 to the center of the objective lens 4;
  • l 2 is the distance from the upper surface of the single crystal silicon wafer 5 to the center of the objective lens 4;
  • d 1 is the index circle diameter of the first side 2-2;
  • d 2 is the index circle diameter of the gear 7;
  • h 1 is the thickness of the single crystal silicon wafer 5;
  • h 2 is the distance from the center of the 6-axis rotation axis of the four-dimensional stage to the upper surface
  • ⁇ 1 is the angle between the beam and the optical axis at the current etching point
  • ⁇ 2 is the angle between the beam and the optical axis at the next etching point
  • the moving direction and rotation direction of the four-dimensional stage 6 are determined by the rotation direction of the motor 8 .
  • optical collimator structure for the MEMS probe laser etching device of the present invention.
  • the optical focal-focus structure used in the MEMS probe laser etching device in this embodiment is based on the MEMS probe laser etching device in the first embodiment, the second embodiment, the third embodiment or the fourth embodiment,
  • the spiral through-slot plate 2 is replaced by the upper-shaped through-slot plate 21
  • the straight through-slotted plate 3 is replaced with the next-shaped through-slot plate 31
  • the single crystal silicon wafer 5 Replaced with a flat reflector 51 of the same thickness
  • the thickness of the first bottom plate 2-1 in the above-mentioned through-slot plate 21 and the spiral through-slot plate 2 is the same
  • the next through-slot plate 31 is the same as that in the straight through-slot plate 3.
  • the thickness of the second bottom plate 3-1 is the same, the thickness of the plane mirror 51 is the same as that of the monocrystalline silicon wafer 5, and the upper surface of the upper slot plate 21 and the lower surface of the lower slot plate 31 are in close contact;
  • the prism 10 is arranged between the word channel plate 31 and the objective lens 4, and the image sensor 11 is arranged on the side edge of the prism 10. Along the optical axis direction, the distance from the lower surface of the next word channel plate 31 to the prism 10 is equal to The distance from the image plane of the image sensor 11 to the prism 10 is the same, and the schematic structural diagram is shown in FIG. 11 . It should be noted that FIG. 11 is based on the MEMS probe laser etching device shown in FIG. 1 .
  • optical collimation method for the MEMS probe laser etching device of the present invention is specific embodiments of the optical collimation method for the MEMS probe laser etching device of the present invention.
  • the optical collimation method for the MEMS probe laser etching device in this embodiment is implemented on the optical collimation structure for the MEMS probe laser etching device in the ninth embodiment.
  • the optical aligning method for the MEMS probe laser etching device includes the following steps:
  • Step a replace the components
  • the spiral through-slot plate 2 is replaced with the upper-character through-slot plate 21, the straight through-slot plate 3 is replaced with the next-character through-slot plate 31, and the single crystal silicon wafer 5 is replaced with a plane mirror 51;
  • a prism 10 is arranged, and an image sensor 11 is arranged on the side edge of the prism 10.
  • the distance from the highest point of the arc light source 1 to the prism 10 It is the same as the distance from the image plane of the image sensor 11 to the prism 10;
  • Step b Data acquisition
  • the four-dimensional stage 6 moves up and down the full scale for one cycle, and obtains a series of on-focus and defocused spot images on the image sensor 11, and simultaneously records the mapping relationship between the position of the four-dimensional stage 6 in the up-down direction and the image;
  • the spot diameter is obtained, and the mapping relationship between the position of the four-dimensional stage 6 in the up-down direction and the spot diameter is established;
  • optical collimation method for the MEMS probe laser etching device of the present invention is specific embodiments of the optical collimation method for the MEMS probe laser etching device of the present invention.
  • the optical aligning method for the MEMS probe laser etching device in this embodiment is further defined on the basis of the tenth specific embodiment: in step c, according to the aligning and defocusing spot images obtained by the image sensor 11 , obtain The spot diameter is achieved by the following methods: setting a grayscale threshold, setting the pixels whose grayscale is less than the grayscale threshold in the spot image to 0, and setting the pixels greater than the grayscale threshold to 255, and then rounding the image obtained after processing. Fitting, fitting into a circular light spot, and finally determining the light spot diameter of the circular light spot.
  • optical collimation method for the MEMS probe laser etching device of the present invention is specific embodiments of the optical collimation method for the MEMS probe laser etching device of the present invention.
  • the optical aligning method for the MEMS probe laser etching device in this embodiment is further defined on the basis of the tenth specific embodiment: in step c, according to the aligning and defocusing spot images obtained by the image sensor 11 , obtain The spot diameter is achieved by the following methods: in the on-focus and defocused spot images, select a fixed area with the center of the spot as the center, sum the gray values of all pixels in the fixed area, and calculate the reciprocal of the obtained calculation result. as the spot diameter.

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Abstract

一种MEMS探针激光刻蚀方法，首先进行参数计算，根据单晶硅圆片(5)的刻蚀间距，得到电机的步进角度，然后进行初始位置调整，旋转螺旋通槽板(2)至初始位置，将第一刻蚀点移动至光轴，并调整四维台(6)，再进行激光刻蚀与进度判断，最后调整四维台和电机(8)，包括四维台向下移动的距离、向左移动的距离和顺时针转动的角度，以及电机转动的角度。该MEMS探针激光刻蚀方法不仅刻蚀精度更高，而且刻蚀间距能够连续调节。

Description

一种MEMS探针激光刻蚀方法 技术领域
本发明一种MEMS探针激光刻蚀方法属于半导体加工测试技术领域。
背景技术
探针卡是用于对裸芯进行测试的测试接口，通过将探针卡上的探针与IC芯片上的焊垫或凸块直接接触，引出IC芯片讯号，再配合测试仪器向IC芯片写入测试信号，进而实现IC芯片封装前的测试。
探针卡的核心结构之一就是探针。目前，制作探针应用最多的有自下而上和自上而下两种方式。
自下而上的电镀方式：
CN201010000429.2，一种微探针结构及其制造方法，利用半导体制程的微影、电镀、平坦化、蚀刻技术，并以高分子来取代电镀第二牺牲层金属，于一具有空间转换的基板表面上，相继形成具有二层以上的微金属结构，藉以得到具有该二层以上的微金属结构的微探针结构，在此，每一层微金属结构是由一种材料所组成，而该二层以上的微金属结构可由相同材料及/或由不同的材料所组成。利用上述微探针结构制造方法所做出的微探针结构，具有强化悬臂梁的结构设计，适用于各类电子组件测试用的组件，可用以做为探针卡的测试头，而有效增加测试频宽、缩小间距及提升并排测试能力。
CN201210221177.5，一种电连接器用探针的电镀工艺，包括以下加工步骤：步骤A、对探针进行前处理，去除油污；步骤B、对探针进行活化处理，活化探针表面氧化膜；步骤C、在探针表面镀上一层铜膜镀层；步骤D、在铜膜镀层表面镀上一层金膜镀层；步骤E、在金膜镀层表面镀上一层钌膜镀层；步骤F、在钌膜镀层表面进行后处理，进行表面封孔、水洗、烘干。该电镀工艺具有原料成本低，加工难度低，生产成本低且能满足电连接器产品外观质量的高要求。
CN201710402364.6，一种可提高高压直流换流阀均压电极探针表面光洁度的电镀工艺，将预处理后的均压电极探针放入到电镀液中进行镀铂处理，电镀液成分为：四氯铂酸钠或氯铂酸钠、乙二胺四乙酸二钠或乙二胺四乙酸四钠；将均压电极探针作为工作电极，采用环状铂片作为对电极，将均压电极探针放置在环状铂片的正中间；在合适的电镀液温度，电镀液pH值和电镀电流下，使均压电极探针表面的镀层到固定厚度。该电镀工艺简单易控，利用电镀液中的螯合剂，限制铂离子的活度及其在镀液中的扩散系数，从而控制铂的还原反应速度，进而控制铂沉积层的表面光洁度达到镜面。
由于自下而上的电镀工艺采用大量化学原料，会产生环保问题，更重要的是，电镀精度 不好把控，微米级甚至是亚微米级的探针制作难度极高。
自上而下的加工方式：
首先将待加工探针带材键合至晶元表面，然后采用光刻工艺制备光刻胶掩模，继而采用干法或湿法工艺进行刻蚀，可以实现小尺寸高精度探针的制作。然而，此种工艺为了实现更小尺寸的探针制备，并保证较高的刻蚀精度，所使用的工艺设备成本会成指数形式上涨，因此，小尺寸高精度探针的制作成本极高。
针对以上问题，又出现了一种基于激光刻蚀方法的探针制备工艺，这种制备工艺能够有效解决自下而上的电镀方式所存在的环保问题，以及自上而下光刻方式所存在的成本高问题。
随着探针尺度越来越小，要求激光刻蚀精度越来越高，同时，随着专用探针卡需求的不断涌现，相应探针的结构也变得愈加复杂，相应的激光烧蚀图形也变得非规则化，这些都给刻蚀带来越来越多的挑战，为了适应这种变化，急需一种精度高、间距能够连续调节的激光刻蚀装置，然而，通过对现有资料和仪器设备的了解，还没有发现一款能够实现上述功能的通用激光刻蚀设备、方法及关键技术。
发明内容
针对上述问题，本发明公开了一种MEMS探针激光刻蚀方法，配合本发明的MEMS探针激光刻蚀装置，不仅刻蚀精度更高，而且刻蚀间距能够连续调节。
本发明的目的是这样实现的：
一种MEMS探针激光刻蚀装置，按照光线传播方向，依次设置弧形光源，螺旋通槽板，直线通槽板，物镜，单晶硅圆片和四维台；
所述弧形光源的每一点到物镜中心距离相同，即弧形光源的形状为以物镜中心为圆心的圆弧形；弧形光源每一点的切线均与该点到物镜中心的连线垂直；
所述螺旋通槽板包括开有螺旋通槽的第一底板和截面为圆环形的第一侧边，所述侧边的外表面设置有齿，形成齿轮结构，所述螺旋通槽的螺旋线满足如下关系：
l(α)＝l 0-kα
其中，l 0为螺旋线距离第一底板圆心的最大距离，在螺旋通槽与直线通槽交点到第一底板圆心的距离为所述最大距离时，定义第一底板所处位置为初始位置；k为系数，具有长度/弧度的量纲，α为弧度，l(α)表示螺旋线从初始位置转动α后，螺旋通槽与直线通槽交点到第一底板圆心的距离；
所述直线通槽板包括开有直线通槽的第二底板和截面为圆环形的第二侧边，所述第二侧边的内圆直径大于第一侧边的外圆直径，所述第二底板上表面与第一底板下表面紧贴；
所述单晶硅圆片上表面与第二底板分别位于物镜的像面和物面，单晶硅圆片能够在四维 台的承载下完成四维运动；
所述四维台能够完成三维平动和一维转动，所述转动在弧形光源与光轴所确定的平面内进行。
上述一种MEMS探针激光刻蚀装置，所述第二底板的直线通槽周围设置有刮板，第二底板上表面设置有多个与第二底板同心的环形槽，所述环形槽起止于直线通槽周围的刮板；第二底板上表面还设置有半径方向的直线槽，所述环形槽与直线槽交叉连通，环形槽与直线槽内灌有润滑油，所述润滑油从第一侧边与第二侧边之间滴入。
上述一种MEMS探针激光刻蚀装置，所述第一侧边外部啮合有齿轮，所述齿轮由电机控制旋转，所述电机连接控制器，所述控制器连接四维台。
上述一种MEMS探针激光刻蚀装置，所述第一侧边与齿轮之间为变速器结构。
面向MEMS探针激光刻蚀装置的针孔结构，包括螺旋通槽板和直线通槽板；
所述螺旋通槽板包括开有螺旋通槽的第一底板和截面为圆环形的第一侧边，所述侧边的外表面设置有齿，形成齿轮结构，所述螺旋通槽的螺旋线满足如下关系：
l(α)＝l 0-kα
其中，l 0为螺旋线距离第一底板圆心的最大距离，在螺旋通槽与直线通槽交点到第一底板圆心的距离为所述最大距离时，定义第一底板所处位置为初始位置；k为系数，具有长度/弧度的量纲，α为弧度，l(α)表示螺旋线从初始位置转动α后，螺旋通槽与直线通槽交点到第一底板圆心的距离；
所述直线通槽板包括开有直线通槽的第二底板和截面为圆环形的第二侧边，所述第二侧边的内圆直径大于第一侧边的外圆直径，所述第二底板上表面与第一底板下表面紧贴；
所述单晶硅圆片上表面与第二底板分别位于物镜的像面和物面，单晶硅圆片能够在四维台的承载下完成四维运动；
所述四维台能够完成三维平动和一维转动，所述转动在弧形光源与光轴所确定的平面内进行。
一种MEMS探针激光刻蚀方法，包括以下步骤：
步骤a、参数计算
根据单晶硅圆片的刻蚀间距d，得到电机的步进角度△β为：
Figure PCTCN2021108764-appb-000001
其中，
k为第一底板螺旋通槽螺旋线具有长度/弧度量纲的系数；
l 1为第二底板到物镜中心的距离；
l 2为单晶硅圆片上表面到物镜中心的距离；
d 1为第一侧边的分度圆直径；
d 2为齿轮的分度圆直径；
步骤b、初始位置调整
步骤b1、将旋转螺旋通槽板至初始位置，将第一刻蚀点移动至光轴；步骤b2、调整四维台：
向上移动：
Figure PCTCN2021108764-appb-000002
向右移动：
Figure PCTCN2021108764-appb-000003
逆时针转动：
Figure PCTCN2021108764-appb-000004
其中，
l 0为螺旋线距离第一底板圆心的最大距离；
h 1为单晶硅圆片的厚度；
h 2为四维台转轴中心到上表面的距离；
步骤c、激光刻蚀
点亮弧形光源至刻蚀完成；
步骤d、进度判断
判断现在的刻蚀行是否刻蚀完成，如果：
是，四维台向前或向后移动，进入下一行刻蚀；
否，进入步骤e；
步骤e、调整四维台和电机
具体为：
四维台向下移动：
(h 1+h 2)·cosγ 2-d·sinγ 2-(h 1+h 2)·cosγ 1
四维台向左移动：
Figure PCTCN2021108764-appb-000005
四维台顺时针转动：
γ 1-γ 2
电机转动：
Figure PCTCN2021108764-appb-000006
其中，
γ 1为在当前刻蚀点，光束与光轴的夹角；
γ 2为在下一刻蚀点，光束与光轴的夹角；
返回步骤c。
上述一种MEMS探针激光刻蚀方法，应用于MEMS探针激光刻蚀装置。
一种MEMS探针激光刻蚀电机与四维台驱动方法，由单晶硅圆片的刻蚀间距d，得到电机的步进角度，四维台向上或向下移动距离，向左或向右移动距离，顺时针或逆时针转动角度。
上述MEMS探针激光刻蚀电机与四维台驱动方法，单晶硅圆片的刻蚀间距为d，那么：
电机的步进角度△β为：
Figure PCTCN2021108764-appb-000007
四维台向上或向下移动：
(h 1+h 2)·cosγ 2-d·sinγ 2-(h 1+h 2)·cosγ 1
四维台向左或向右移动：
Figure PCTCN2021108764-appb-000008
四维台顺时针或逆时针转动：
γ 1-γ 2
其中，
k为第一底板螺旋通槽螺旋线具有长度/弧度量纲的系数；
l 1为第二底板到物镜中心的距离；
l 2为单晶硅圆片上表面到物镜中心的距离；
d 1为第一侧边的分度圆直径；
d 2为齿轮的分度圆直径；
h 1为单晶硅圆片的厚度；
h 2为四维台转轴中心到上表面的距离；
γ 1为在当前刻蚀点，光束与光轴的夹角；
γ 2为在下一刻蚀点，光束与光轴的夹角；
所述四维台移动方向和转动方向由电机的转动方向决定。
上述MEMS探针激光刻蚀电机与四维台驱动方法，应用于MEMS探针激光刻蚀装置。
MEMS探针激光刻蚀装置用光学准焦结构，在MEMS探针激光刻蚀装置中，将螺旋通槽板用上一字通槽板代替，将直线通槽板用下一字通槽板代替，将单晶硅圆片用相同厚度的平面反射镜代替，所述上一字通槽板与螺旋通槽板中的第一底板厚度相同，下一字通槽板与直线通槽板中的第二底板厚度相同，平面反射镜与单晶硅圆片厚度相同，所述上一字通槽板上表面与下一字通槽板下表面紧贴；在下一字通槽板和物镜之间，设置有棱镜，在棱镜的侧边缘，设置有图像传感器，沿光轴方向，下一字通槽板的下表面到棱镜的距离与图像传感器像面到棱镜的距离相同。
MEMS探针激光刻蚀装置用光学准焦方法，包括以下步骤：
步骤a、替增元件
替：在MEMS探针激光刻蚀装置中，将螺旋通槽板用上一字通槽板代替，将直线通槽板用下一字通槽板代替，将单晶硅圆片用平面反射镜代替；
增：在下一字通槽板和物镜之间，设置有棱镜，在棱镜的侧边缘，设置有图像传感器，沿光轴方向，弧形光源的最高点到棱镜的距离与图像传感器像面到棱镜的距离相同；
步骤b、数据获取
四维台全量程上下移动一个周期，并在图像传感器上得到一系列准焦和离焦光斑图像，同时记录四维台在上下方向的位置与图像的映射关系；
步骤c、数据处理
根据图像传感器得到的准焦和离焦光斑图像，得到光斑直径，同时建立四维台在上下方向的位置与光斑直径的映射关系；
步骤d、完成标定
找到光斑直径最小值，并根据四维台在上下方向的位置与光斑直径的映射关系，找到所述最小值所对应的四维台在上下方向的位置，并将四维台移动到所述位置。
上述MEMS探针激光刻蚀装置用光学准焦方法，在步骤c中，根据图像传感器得到的准焦和离焦光斑图像，得到光斑直径，通过以下方法实现：设置灰度阈值，将光斑图像中灰度小于所述灰度阈值的像素置0，大于所述灰度阈值的像素置255，再将处理后得到的图像进行圆周拟合，拟合成圆形光斑，最后确定所述圆形光斑的光斑直径。
上述MEMS探针激光刻蚀装置用光学准焦方法，在步骤c中，根据图像传感器得到的准焦和离焦光斑图像，得到光斑直径，通过以下方法实现：在准焦和离焦光斑图像中，选取以光斑中心为中心的固定区域，将所述固定区域内所有像素灰度值进行求和，将得到的计算结果的倒数作为光斑直径。
有益效果：
第一、在本发明MEMS探针激光刻蚀装置中，由于设置有弧形光源，且弧形光源的每一点到物镜中心距离相同，即弧形光源的形状为以物镜中心为圆心的圆弧形；弧形光源每一点的切线均与该点到物镜中心的连线垂直，因此能够提供直接照射到针孔处的光束，避免在本发明特殊结构下，受第一底板和第二底板厚度的影响，光束在不同位置能量分布不均而造成刻蚀深度不均的问题。
第二、在本发明MEMS探针激光刻蚀装置中，由于形成点光源的针孔结构由螺旋通槽板和直线通槽板构成，且通过螺旋通槽板的转动实现针孔位置的改变，在这种结构下，可以实现针孔位置的连续改变，以适应不同刻蚀间距的探针，适用性更广；更重要的是，通过匹配弧形光源的曝光时间以及螺旋通槽板的转动步距角，可以实现刻蚀间距的动态调整，能够针对任意变间距的探针进行刻蚀。
第三、在本发明MEMS探针激光刻蚀装置中，通过改变弧形光源的能量，可以实现刻蚀深度的调整；通过改变螺旋通槽板的转速，即可刻蚀速度的调整；进而可以满足不同参数下的刻蚀要求。
第四、在本发明MEMS探针激光刻蚀装置中，由于刻蚀位置的改变是通过转动螺旋通槽板实现的，不同位置仅仅存在相同的圆度误差，相比于传统平移式的方式，不会出现位移误差的累计，因此从光束的精度来讲，更有利于更小间距的刻蚀，可以刻蚀精度。
第五、在本发明MEMS探针激光刻蚀装置中，虽然相比于传统单方向刻蚀方式相比，由于光束从弧形光源经过针孔后，在不同的位置具有不同的照射角度，但是由于设置有四维台，且所述思维台能够根据刻蚀位置进行调整，因此无论形成点光源的针孔位于何处，都会实现 垂直刻蚀，进而保证刻蚀精度。
第六、在本发明MEMS探针激光刻蚀装置中，还设置有专门的MEMS探针激光刻蚀装置用光学准焦结构，并且设计有MEMS探针激光刻蚀装置用光学准焦方法，通过下一字通槽板到棱镜的距离与图像传感器像面到棱镜的距离相同的“共焦”设置，且利用扫描四维台在不同位置处光斑信息的方式，找到针孔结构与单晶硅圆片分别位于物镜的物面和像面时四维台的位置，进而实现在刻蚀之前对整个装置进行调整，确保针孔结构与单晶硅圆片之间严格满足物象关系，进而保证刻蚀精度。
第七、在本发明MEMS探针激光刻蚀装置中，第一侧边分度圆直径越大，齿轮分度圆直径越小，精度越高，但速度越慢，而第一侧边分度圆直径越小，齿轮分度圆直径越大，精度越低，但速度越快；将第一侧边和齿轮选用变速器结构，即可改变电机到螺旋通槽板的传动比，进而有利于更灵活地调整刻蚀速度和刻蚀精度。
附图说明
图1是本发明MEMS探针激光刻蚀装置的结构示意图一。
图2是本发明MEMS探针激光刻蚀装置中螺旋通槽板的结构示意图。
图3是本发明MEMS探针激光刻蚀装置中直线通槽板的结构示意图。
图4是螺旋通槽板和直线通槽板叠加在一起后形成针孔的结构示意图。
图5是第二底板的结构示意图。
图6是本发明MEMS探针激光刻蚀装置的结构示意图二。
图7是本发明MEMS探针激光刻蚀方法的流程图。
图8是初始位置调整过程第一步完成后各元件相对位置示意图。
图9是初始位置调整过程第二步四维台调整前后的相对位置关系图。
图10是相邻两次刻蚀之间四维台调整前后的相对位置关系图。
图11是本发明MEMS探针激光刻蚀装置用光学准焦结构的结构示意图。
图12是本发明MEMS探针激光刻蚀装置用光学准焦方法的流程图。
图中：1弧形光源、2螺旋通槽板、2-1第一底板、2-2第一侧边、3直线通槽板、3-1第二底板、3-2第二侧边、4物镜、5单晶硅圆片、6四维台、7齿轮、8电机、9控制器、10棱镜、11图像传感器、21上一字通槽板、31下一字通槽板、51平面反射镜。
具体实施方式
下面结合附图对本发明具体实施方式作进一步详细描述。
具体实施方式一
以下是本发明MEMS探针激光刻蚀装置的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置，结构示意图如图1所示，在所述MEMS探针激光刻蚀装置中，按照光线传播方向，依次设置弧形光源1，螺旋通槽板2，直线通槽板3，物镜4，单晶硅圆片5和四维台6；
所述弧形光源1的每一点到物镜4中心距离相同，即弧形光源1的形状为以物镜4中心为圆心的圆弧形；弧形光源1每一点的切线均与该点到物镜4中心的连线垂直；
所述螺旋通槽板2的结构示意图如图2所示，包括开有螺旋通槽的第一底板2-1和截面为圆环形的第一侧边2-2，所述侧边2-2的外表面设置有齿，形成齿轮结构，所述螺旋通槽的螺旋线满足如下关系：
l(α)＝l 0-kα
其中，l 0为螺旋线距离第一底板2-1圆心的最大距离，在螺旋通槽与直线通槽交点到第一底板2-1圆心的距离为所述最大距离时，定义第一底板2-1所处位置为初始位置；k为系数，具有长度/弧度的量纲，α为弧度，l(α)表示螺旋线从初始位置转动α后，螺旋通槽与直线通槽交点到第一底板2-1圆心的距离；
所述直线通槽板3的结构示意图如图3所示，包括开有直线通槽的第二底板3-1和截面为圆环形的第二侧边3-2，所述第二侧边3-2的内圆直径大于第一侧边2-2的外圆直径，所述第二底板3-1上表面与第一底板2-1下表面紧贴；
螺旋通槽板2和直线通槽板3叠加在一起后形成针孔的结构示意图如图4所示；
所述单晶硅圆片5上表面与第二底板3-1分别位于物镜4的像面和物面，单晶硅圆片5能够在四维台6的承载下完成四维运动；
所述四维台6能够完成三维平动和一维转动，所述转动在弧形光源1与光轴所确定的平面内进行。
具体实施方式二
以下是本发明MEMS探针激光刻蚀装置的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置，在具体实施方式一的基础上，进一步限定：第二底板3-1的直线通槽周围设置有刮板，第二底板3-1上表面设置有多个与第二底板3-1同心的环形槽，所述环形槽起止于直线通槽周围的刮板；第二底板3-1上表面还设置有半径方向的直线槽，所述环形槽与直线槽交叉连通，环形槽与直线槽内灌有润滑油，如图5所示，所述润滑油从第一侧边2-2与第二侧边3-2之间滴入。
具体实施方式三
以下是本发明MEMS探针激光刻蚀装置的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置，在具体实施方式一或具体实施方式二的基础上，进一步限定：MEMS探针激光刻蚀装置的结构，如图6所示，所述第一侧边2-2外部啮合有齿轮7，所述齿轮由电机8控制旋转，所述电机8连接控制器9，所述控制器9连接四维台6。
具体实施方式四
以下是本发明MEMS探针激光刻蚀装置的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置，在具体实施方式三的基础上，进一步限定：所述第一侧边2-2与齿轮7之间为变速器结构。
具体实施方式五
以下是本发明面向MEMS探针激光刻蚀装置的针孔结构的具体实施方式。
本实施方式下的面向MEMS探针激光刻蚀装置的针孔结构，包括螺旋通槽板2和直线通槽板3；
所述螺旋通槽板2的结构示意图如图2所示，包括开有螺旋通槽的第一底板2-1和截面为圆环形的第一侧边2-2，所述侧边2-2的外表面设置有齿，形成齿轮结构，所述螺旋通槽的螺旋线满足如下关系：
l(α)＝l 0-kα
其中，l 0为螺旋线距离第一底板2-1圆心的最大距离，在螺旋通槽与直线通槽交点到第一底板2-1圆心的距离为所述最大距离时，定义第一底板2-1所处位置为初始位置；k为系数，具有长度/弧度的量纲，α为弧度，l(α)表示螺旋线从初始位置转动α后，螺旋通槽与直线通槽交点到第一底板2-1圆心的距离；
所述直线通槽板3的结构示意图如图3所示，包括开有直线通槽的第二底板3-1和截面为圆环形的第二侧边3-2，所述第二侧边3-2的内圆直径大于第一侧边2-2的外圆直径，所述第二底板3-1上表面与第一底板2-1下表面紧贴；
螺旋通槽板2和直线通槽板3叠加在一起后形成针孔的结构示意图如图4所示；
所述第二底板3-1的直线通槽周围设置有刮板，第二底板3-1上表面设置有多个与第二底板3-1同心的环形槽，所述环形槽起止于直线通槽周围的刮板；第二底板3-1上表面还设置有半径方向的直线槽，所述环形槽与直线槽交叉连通，环形槽与直线槽内灌有润滑油，如图5所示，所述润滑油从第一侧边2-2与第二侧边3-2之间滴入。
具体实施方式六
以下是本发明MEMS探针激光刻蚀方法的具体实施方式。
本实施方式下的MEMS探针激光刻蚀方法，在具体实施方式一、具体实施方式二、具体实施方式三或具体实施方式四下的MEMS探针激光刻蚀装置上实施。
所述MEMS探针激光刻蚀方法，流程图如图7所示，包括以下步骤：
步骤a、参数计算
根据单晶硅圆片5的刻蚀间距d，得到电机8的步进角度△β为：
Figure PCTCN2021108764-appb-000009
其中，
k为第一底板2-1螺旋通槽螺旋线具有长度/弧度量纲的系数；
l 1为第二底板3-1到物镜4中心的距离；
l 2为单晶硅圆片5上表面到物镜4中心的距离；
d 1为第一侧边2-2的分度圆直径；
d 2为齿轮7的分度圆直径；
步骤b、初始位置调整
步骤b1、将旋转螺旋通槽板2至初始位置，将第一刻蚀点移动至光轴，如图8所示；
步骤b2、调整四维台6：
向上移动：
Figure PCTCN2021108764-appb-000010
向右移动：
Figure PCTCN2021108764-appb-000011
逆时针转动：
Figure PCTCN2021108764-appb-000012
其中，
l 0为螺旋线距离第一底板2-1圆心的最大距离；
h 1为单晶硅圆片5的厚度；
h 2为四维台6转轴中心到上表面的距离；
四维台6调整前后的相对位置关系如图9所示；
步骤c、激光刻蚀
点亮弧形光源1至刻蚀完成；
步骤d、进度判断
判断现在的刻蚀行是否刻蚀完成，如果：
是，四维台6向前或向后移动，进入下一行刻蚀；
否，进入步骤e；
步骤e、调整四维台6和电机8
具体为：
四维台6向下移动：
(h 1+h 2)·cosγ 2-d·sinγ 2-(h 1+h 2)·cosγ 1
四维台6向左移动：
Figure PCTCN2021108764-appb-000013
四维台6顺时针转动：
γ 1-γ 2
电机8转动：
Figure PCTCN2021108764-appb-000014
其中，
γ 1为在当前刻蚀点，光束与光轴的夹角；
γ 2为在下一刻蚀点，光束与光轴的夹角；
相邻两次刻蚀之间四维台6调整前后的相对位置关系如图10所示；
返回步骤c。
具体实施方式七
以下是本发明MEMS探针激光刻蚀电机与四维台驱动方法的具体实施方式。
本实施方式下的MEMS探针激光刻蚀电机与四维台驱动方法，在具体实施方式一、具体实施方式二、具体实施方式三或具体实施方式四下的MEMS探针激光刻蚀装置上实施。
所述MEMS探针激光刻蚀电机与四维台驱动方法，由单晶硅圆片5的刻蚀间距d，得到 电机8的步进角度，四维台6向上或向下移动距离，向左或向右移动距离，顺时针或逆时针转动角度。
具体实施方式八
以下是本发明MEMS探针激光刻蚀电机与四维台驱动方法的具体实施方式。
本实施方式下的MEMS探针激光刻蚀电机与四维台驱动方法，在具体实施方式一、具体实施方式二、具体实施方式三或具体实施方式四下的MEMS探针激光刻蚀装置上实施；且在具体实施方式六的基础上，进一步限定：
单晶硅圆片5的刻蚀间距为d，那么：
电机8的步进角度△β为：
Figure PCTCN2021108764-appb-000015
四维台6向上或向下移动：
(h 1+h 2)·cosγ 2-d·sinγ 2-(h 1+h 2)·cosγ 1
四维台6向左或向右移动：
Figure PCTCN2021108764-appb-000016
四维台6顺时针或逆时针转动：
γ 1-γ 2
其中，
k为第一底板2-1螺旋通槽螺旋线具有长度/弧度量纲的系数；
l 1为第二底板3-1到物镜4中心的距离；
l 2为单晶硅圆片5上表面到物镜4中心的距离；
d 1为第一侧边2-2的分度圆直径；
d 2为齿轮7的分度圆直径；
h 1为单晶硅圆片5的厚度；
h 2为四维台6转轴中心到上表面的距离；
γ 1为在当前刻蚀点，光束与光轴的夹角；
γ 2为在下一刻蚀点，光束与光轴的夹角；
相邻两次刻蚀之间四维台6调整前后的相对位置关系如图10所示；
所述四维台6移动方向和转动方向由电机8的转动方向决定。
具体实施方式九
以下是本发明MEMS探针激光刻蚀装置用光学准焦结构的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置用光学准焦结构，以具体实施方式一、具体实施方式二、具体实施方式三或具体实施方式四下的MEMS探针激光刻蚀装置为基础，在以上MEMS探针激光刻蚀装置中，将螺旋通槽板2用上一字通槽板21代替，将直线通槽板3用下一字通槽板31代替，将单晶硅圆片5用相同厚度的平面反射镜51代替，所述上一字通槽板21与螺旋通槽板2中的第一底板2-1厚度相同，下一字通槽板31与直线通槽板3中的第二底板3-1厚度相同，平面反射镜51与单晶硅圆片5厚度相同，所述上一字通槽板21上表面与下一字通槽板31下表面紧贴；在下一字通槽板31和物镜4之间，设置有棱镜10，在棱镜10的侧边缘，设置有图像传感器11，沿光轴方向，下一字通槽板31的下表面到棱镜10的距离与图像传感器11像面到棱镜10的距离相同，结构示意图如图11所示，需要说明的是，图11是以图1所示的MEMS探针激光刻蚀装置为基础的。
具体实施方式十
以下是本发明MEMS探针激光刻蚀装置用光学准焦方法的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置用光学准焦方法，在具体实施方式九下的MEMS探针激光刻蚀装置用光学准焦结构上实施。
所述MEMS探针激光刻蚀装置用光学准焦方法，流程图如图12所示，包括以下步骤：
步骤a、替增元件
替：在MEMS探针激光刻蚀装置中，将螺旋通槽板2用上一字通槽板21代替，将直线通槽板3用下一字通槽板31代替，将单晶硅圆片5用平面反射镜51代替；
增：在下一字通槽板31和物镜4之间，设置有棱镜10，在棱镜10的侧边缘，设置有图像传感器11，沿光轴方向，弧形光源1的最高点到棱镜10的距离与图像传感器11像面到棱镜10的距离相同；
步骤b、数据获取
四维台6全量程上下移动一个周期，并在图像传感器11上得到一系列准焦和离焦光斑图像，同时记录四维台6在上下方向的位置与图像的映射关系；
步骤c、数据处理
根据图像传感器11得到的准焦和离焦光斑图像，得到光斑直径，同时建立四维台6在上下方向的位置与光斑直径的映射关系；
步骤d、完成标定
找到光斑直径最小值，并根据四维台6在上下方向的位置与光斑直径的映射关系，找到所述最小值所对应的四维台6在上下方向的位置，并将四维台6移动到所述位置。
具体实施方式十一
以下是本发明MEMS探针激光刻蚀装置用光学准焦方法的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置用光学准焦方法，在具体实施方式十的基础上，进一步限定：在步骤c中，根据图像传感器11得到的准焦和离焦光斑图像，得到光斑直径，通过以下方法实现：设置灰度阈值，将光斑图像中灰度小于所述灰度阈值的像素置0，大于所述灰度阈值的像素置255，再将处理后得到的图像进行圆周拟合，拟合成圆形光斑，最后确定所述圆形光斑的光斑直径。
具体实施方式十二
以下是本发明MEMS探针激光刻蚀装置用光学准焦方法的具体实施方式。
本实施方式下的MEMS探针激光刻蚀装置用光学准焦方法，在具体实施方式十的基础上，进一步限定：在步骤c中，根据图像传感器11得到的准焦和离焦光斑图像，得到光斑直径，通过以下方法实现：在准焦和离焦光斑图像中，选取以光斑中心为中心的固定区域，将所述固定区域内所有像素灰度值进行求和，将得到的计算结果的倒数作为光斑直径。
最后需要说明的是，在以上所有具体实施方式中所出现的技术特征，只要不矛盾，都可以进行排列组合，本领域技术人员能够根据高中阶段学习过的排列组合数学知识穷尽每一种排列组合后的结果，所有排列组合后的结果都应该理解为被本申请所公开。

Claims (3)

  1. 一种MEMS探针激光刻蚀方法，其特征在于，包括以下步骤：
    步骤a、参数计算
    根据单晶硅圆片(5)的刻蚀间距d，得到电机(8)的步进角度△β为：
    Figure PCTCN2021108764-appb-100001
    其中，
    k为第一底板(2-1)螺旋通槽螺旋线具有长度/弧度量纲的系数；
    l 1为第二底板(3-1)到物镜(4)中心的距离；
    l 2为单晶硅圆片(5)上表面到物镜(4)中心的距离；
    d 1为第一侧边(2-2)的分度圆直径；
    d 2为齿轮(7)的分度圆直径；
    步骤b、初始位置调整
    步骤b1、将旋转螺旋通槽板(2)至初始位置，将第一刻蚀点移动至光轴；
    步骤b2、调整四维台(6)：
    向上移动：
    Figure PCTCN2021108764-appb-100002
    向右移动：
    Figure PCTCN2021108764-appb-100003
    逆时针转动：
    Figure PCTCN2021108764-appb-100004
    其中，
    l 0为螺旋线距离第一底板(2-1)圆心的最大距离；
    h 1为单晶硅圆片(5)的厚度；
    h 2为四维台(6)转轴中心到上表面的距离；
    步骤c、激光刻蚀
    点亮弧形光源(1)至刻蚀完成；
    步骤d、进度判断
    判断现在的刻蚀行是否刻蚀完成，如果：
    是，四维台(6)向前或向后移动，进入下一行刻蚀；
    否，进入步骤e；
    步骤e、调整四维台(6)和电机(8)
    具体为：
    四维台(6)向下移动：
    (h 1+h 2)·cosγ 2-d·sinγ 2-(h 1+h 2)·cosγ 1
    四维台(6)向左移动：
    Figure PCTCN2021108764-appb-100005
    四维台(6)顺时针转动：
    γ 1-γ 2
    电机(8)转动：
    Figure PCTCN2021108764-appb-100006
    其中，
    γ 1为在当前刻蚀点，光束与光轴的夹角；
    γ 2为在下一刻蚀点，光束与光轴的夹角；
    返回步骤c。
  2. 根据权利要求1所述的一种MEMS探针激光刻蚀方法，其特征在于，应用于MEMS探针激光刻蚀装置。
  3. 根据权利要求2所述的一种MEMS探针激光刻蚀方法，其特征在于，在所述MEMS探针激光刻蚀装置中，按照光线传播方向，依次设置弧形光源(1)，螺旋通槽板(2)，直线通槽板(3)，物镜(4)，单晶硅圆片(5)和四维台(6)；
    所述弧形光源(1)的每一点到物镜(4)中心距离相同，即弧形光源(1)的形状为以物镜(4)中心为圆心的圆弧形；弧形光源(1)每一点的切线均与该点到物镜(4)中心的连线垂直；
    所述螺旋通槽板(2)包括开有螺旋通槽的第一底板(2-1)和截面为圆环形的第一侧边(2-2)，所述侧边(2-2)的外表面设置有齿，形成齿轮结构，所述螺旋通槽的螺旋线满足如下关系：
    l(α)＝l 0-kα
    其中，l 0为螺旋线距离第一底板(2-1)圆心的最大距离，在螺旋通槽与直线通槽交点到第一底板(2-1)圆心的距离为所述最大距离时，定义第一底板(2-1)所处位置为初始位置；k为系数，具有长度/弧度的量纲，α为弧度，l(α)表示螺旋线从初始位置转动α后，螺旋通槽与直线通槽交点到第一底板(2-1)圆心的距离；
    所述直线通槽板(3)包括开有直线通槽的第二底板(3-1)和截面为圆环形的第二侧边(3-2)，所述第二侧边(3-2)的内圆直径大于第一侧边(2-2)的外圆直径，所述第二底板(3-1)上表面与第一底板(2-1)下表面紧贴；
    所述单晶硅圆片(5)上表面与第二底板(3-1)分别位于物镜(4)的像面和物面，单晶硅圆片(5)能够在四维台(6)的承载下完成四维运动；
    所述四维台(6)能够完成三维平动和一维转动，所述转动在弧形光源(1)与光轴所确定的平面内进行。
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CN112496556A (zh) * 2020-12-01 2021-03-16 强一半导体（苏州）有限公司 一种mems探针激光刻蚀电机与四维台驱动方法

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CN115855764A (zh) * 2022-12-20 2023-03-28 常州大学怀德学院 一种用于干燥粉末的多孔式mems气体传感器

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