WO2022113971A1 - Appareil et procédé de traitement de substrat - Google Patents

Appareil et procédé de traitement de substrat Download PDF

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Publication number
WO2022113971A1
WO2022113971A1 PCT/JP2021/042906 JP2021042906W WO2022113971A1 WO 2022113971 A1 WO2022113971 A1 WO 2022113971A1 JP 2021042906 W JP2021042906 W JP 2021042906W WO 2022113971 A1 WO2022113971 A1 WO 2022113971A1
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Prior art keywords
processing
fluid
space
flow path
substrate
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PCT/JP2021/042906
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English (en)
Japanese (ja)
Inventor
周武 墨
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株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2022113971A1 publication Critical patent/WO2022113971A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate processing apparatus that processes a substrate with a processing fluid in a processing container.
  • the specification, drawings and claims of the Japanese application shown below are incorporated herein by reference in their entirety: Japanese Patent Application No. 2020-194879 (filed on November 25, 2020).
  • the processing process of various substrates such as semiconductor substrates and glass substrates for display devices includes processing the surface of the substrate with various processing fluids.
  • Treatments using liquids such as chemicals and rinsing fluids as treatment fluids have been widely performed, but in recent years, treatments using supercritical fluids have also been put into practical use.
  • a supercritical fluid having a lower surface tension than a liquid penetrates deep into the gaps of the pattern, so that the treatment can be performed efficiently and during drying. The risk of pattern collapse due to surface tension can be reduced.
  • Patent Document 1 describes a substrate processing apparatus that dries a substrate using a supercritical fluid.
  • a processing container is configured in which two plate-shaped members are arranged facing each other and the gap thereof functions as a processing space.
  • a wafer (board) placed on a thin plate-shaped holding plate is carried in from one end of the processing space, and carbon dioxide in a supercritical state is introduced from the other end.
  • a fluid discharge header is provided in the processing container.
  • a discharge port is connected to the fluid discharge header, and the supercritical fluid is discharged from the processing space to the outside of the processing container via the fluid discharge header and the discharge port.
  • the configuration for discharging the supercritical fluid from the processing space is also described in detail in Patent Document 2, Patent Document 3, Patent Document 4, and the like.
  • the fluid discharge header and the discharge port form an exhaust flow path for supercritical fluid from the processing space, but the exhaust is not balanced in the exhaust flow path, and the following problems may occur. .. That is, on the inlet side of the exhaust flow path, the fluid discharge header extends in the width direction of the substrate, and the supercritical fluid flows into the fluid discharge header from a relatively wide range in the width direction. On the other hand, on the outlet side of the exhaust flow path, the supercritical fluid flowing inside the fluid discharge header is discharged from a part of the fluid discharge header to the outside of the processing container. For example, in the apparatus described in Patent Document 1, the fluid is discharged out of the processing container from the discharge ports connected to both ends of the fluid discharge header.
  • the exhaust gas becomes unbalanced on the inlet side and the outlet side of the exhaust flow path, and the backflow of the supercritical fluid to the processing space may occur particularly on the inlet side of the exhaust flow path.
  • components and particles eluted in the treated supercritical fluid may reattach to the substrate and cause contamination of the substrate.
  • the present invention has been made in view of the above problems, and in a substrate processing technique for treating a substrate with a processing fluid in the processing space of a processing container, it is effective that the treated processing fluid flows back into the processing space and contaminates the substrate.
  • the purpose is to prevent it.
  • One aspect of the present invention is a substrate processing apparatus, which is a processing container for accommodating a substrate in a processing space, a fluid supply unit for supplying a processing fluid for supercritical processing to the processing space, and a processing space in the processing container. It is provided with a fluid discharge unit that discharges the processing fluid from the processing space via an exhaust flow path formed in communication with the exhaust flow path, and a rectifying unit provided at a rectifying position of the exhaust flow path.
  • the rectifying unit is a fluid discharging unit.
  • another aspect of the present invention is a substrate processing method, in which a processing fluid for supercritical processing is supplied to the processing space of the processing container to supercritically process the substrate accommodated in the processing space. It is provided with a discharge step of discharging the processing fluid from the treatment space by the fluid discharge section via an exhaust flow path formed in the treatment container in communication with the treatment space.
  • a processing fluid for supercritical processing is supplied to the processing space of the processing container to supercritically process the substrate accommodated in the processing space. It is provided with a discharge step of discharging the processing fluid from the treatment space by the fluid discharge section via an exhaust flow path formed in the treatment container in communication with the treatment space.
  • the processing fluid in the processing space is discharged to the outside of the apparatus via the exhaust flow path by the fluid discharge section, but the inlet side (treatment space side) and the outlet side of the exhaust flow path are discharged. If the exhaust balance is lost on the (fluid discharge part side), backflow of the processing fluid from the exhaust flow path to the processing space may occur. Therefore, in the present invention, a rectifying unit is provided in the exhaust flow path, and the processing fluid flowing into the rectified position is rectified when the processing fluid is discharged by the fluid discharge unit.
  • the balance between the flow of the processing fluid on the processing space side (inlet side of the exhaust flow path) with respect to the rectification position and the flow of the processing fluid on the fluid discharge part side (outlet side of the exhaust flow path) with respect to the rectification position is balanced. It will be adjusted.
  • the plurality of components of each aspect of the present invention described above are not all essential, and may be used to solve some or all of the above-mentioned problems, or part or all of the effects described herein. In order to achieve the above, it is possible to change, delete, replace a part of the plurality of components with new other components, and partially delete the limited contents, as appropriate.
  • the exhaust balance in the exhaust flow path is adjusted, it is possible to effectively prevent the treated processing fluid from flowing back into the processing space and contaminating the substrate.
  • FIG. 1 shows the schematic structure of the 1st Embodiment of the substrate processing apparatus which concerns on this invention.
  • It is a schematic diagram which shows the outline of the flow path of a processing fluid. It is a top view of the flow path of a processing fluid. It is a figure which illustrates the structure around the opening of the processing chamber, and the rectifying part. It is a figure which illustrates the structure around the opening of the processing chamber, and the rectifying part. It is a figure which shows typically the flow of the processing fluid around the opening of the processing chamber. It is sectional drawing which shows typically the flow of the processing fluid in the vicinity of the notch part of a partition wall.
  • FIG. 1 It is sectional drawing which shows typically the flow of the processing fluid near the end part in the X direction of a partition wall. It is a figure which illustrates the structure around the opening of the processing chamber, and the rectifying part in the 2nd Embodiment of the substrate processing apparatus which concerns on this invention. It is a figure which illustrates the structure around the opening of the processing chamber and the rectifying part in the 3rd Embodiment of the substrate processing apparatus which concerns on this invention. It is a figure which illustrates the structure around the opening of the processing chamber and the rectifying part in 4th Embodiment of the substrate processing apparatus which concerns on this invention. It is a top view of the flow path of the processing fluid in 5th Embodiment of the substrate processing apparatus which concerns on this invention.
  • FIG. 1 It is a perspective view which shows an example of the rectifying part used in 5th Embodiment. It is sectional drawing which shows typically the flow of the processing fluid near the central part in the width direction. It is sectional drawing which shows typically the flow of the processing fluid near the end in the width direction. It is a figure which illustrates the structure around the opening of the processing chamber and the rectifying part in the 6th Embodiment of the substrate processing apparatus which concerns on this invention.
  • FIG. 1 is a diagram showing a schematic configuration of a first embodiment of the substrate processing apparatus according to the present invention.
  • the substrate processing device 1 is a device for treating the surface of various substrates such as a semiconductor substrate with a supercritical fluid.
  • the XYZ Cartesian coordinate system is set as shown in FIG.
  • the XY plane is a horizontal plane
  • the Z direction represents a vertical direction. More specifically, the (-Z) direction represents a vertical downward direction.
  • the "board" in the present embodiment includes a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for a FED (Field Emission Display), a substrate for an optical disk, and a magnetic disk.
  • Various substrates such as substrates and substrates for optomagnetic disks can be applied.
  • a substrate processing apparatus mainly used for processing a semiconductor wafer will be described with reference to the drawings, but the present invention can be similarly applied to the processing of various substrates exemplified above.
  • the board processing device 1 includes a processing unit 10, a supply unit 50, and a control unit 90.
  • the treatment unit 10 is the main execution body of the supercritical drying treatment, and the supply unit 50 supplies the chemical substances and power required for the treatment to the treatment unit 10.
  • the control unit 90 controls each part of these devices to realize a predetermined process.
  • the control unit 90 includes a CPU 91 that executes various control programs, a memory 92 that temporarily stores processing data, a storage 93 that stores control programs executed by the CPU 91, and a user or an external device. It is equipped with an interface 94 for exchanging information.
  • the operation of the device which will be described later, is realized by the CPU 91 executing a control program written in the storage 93 in advance and causing each part of the device to perform a predetermined operation.
  • the processing unit 10 includes a processing chamber 100.
  • the processing chamber 100 includes a first member 11, a second member 12, and a third member 13, which are formed of metal blocks, respectively.
  • the first member 11 and the second member 12 are vertically connected by a coupling member (not shown), and the third member 13 is coupled to the (+ Y) side surface thereof by a coupling member (not shown) to form a hollow inside.
  • the processing chamber 100 of the structure is configured.
  • the internal space of this cavity is the processing space SP in which the processing for the substrate S is executed.
  • the substrate S to be processed is carried into the processing space SP and undergoes processing.
  • a slit-shaped opening 101 extending in the X direction is formed on the ( ⁇ Y) side surface of the processing chamber 100, and the processing space SP and the external space communicate with each other through the opening 101.
  • a lid member 14 is provided on the ( ⁇ Y) side side surface of the processing chamber 100 so as to close the opening 101.
  • a flat plate-shaped support tray 15 is attached to the (+ Y) side side surface of the lid member 14 in a horizontal posture, and the upper surface of the support tray 15 is a support surface on which the substrate S can be placed. More specifically, the support tray 15 has a structure in which a recess 152 formed slightly larger than the plane size of the substrate S is provided on a substantially flat upper surface 151. By accommodating the substrate S in the recess 152, the substrate S is held in a predetermined position on the support tray 15. The substrate S is held with the surface to be processed (hereinafter, may be simply referred to as “substrate surface”) Sa facing upward. At this time, it is preferable that the upper surface 151 of the support tray 15 and the surface Sa of the substrate are flush with each other.
  • the lid member 14 is supported so as to be horizontally movable in the Y direction by a support mechanism (not shown). Further, the lid member 14 can be moved back and forth with respect to the processing chamber 100 by the advancing / retreating mechanism 53 provided in the supply unit 50.
  • the advancing / retreating mechanism 53 has a linear motion mechanism such as a linear motor, a linear motion guide, a ball screw mechanism, a solenoid, and an air cylinder, and such a linear motion mechanism causes the lid member 14 to move in the Y direction. Move to.
  • the advancing / retreating mechanism 53 operates in response to a control command from the control unit 90.
  • the support tray 15 When the support tray 15 is pulled out from the processing space SP through the opening 101 by moving the lid member 14 in the ( ⁇ Y) direction, the support tray 15 can be accessed from the outside. That is, the substrate S can be placed on the support tray 15 and the substrate S mounted on the support tray 15 can be taken out. On the other hand, as the lid member 14 moves in the (+ Y) direction, the support tray 15 is accommodated in the processing space SP. When the substrate S is placed on the support tray 15, the substrate S is carried into the processing space SP together with the support tray 15.
  • the substrate S prevents the surface Sa from being exposed and the pattern collapse from occurring. Therefore, the surface Sa is carried in a state of being covered with a liquid film.
  • a liquid film for example, an organic solvent having a relatively low surface tension such as isopropyl alcohol (IPA) and acetone can be preferably used.
  • the processing space SP is sealed by the lid member 14 moving in the (+ Y) direction and closing the opening 101.
  • a seal member 16 is provided between the (+ Y) side side surface of the lid member 14 and the ( ⁇ Y) side side surface of the processing chamber 100, and the airtight state of the processing space SP is maintained.
  • the sealing member 16 an elastic resin material, for example, an annular material formed of rubber can be used.
  • the lid member 14 is fixed to the processing chamber 100 by a locking mechanism (not shown). In the state where the airtight state of the processing space SP is secured in this way, the processing for the substrate S is executed in the processing space SP.
  • a fluid of a substance that can be used for supercritical processing for example, carbon dioxide
  • a fluid of a substance that can be used for supercritical processing for example, carbon dioxide
  • Carbon dioxide is a chemical substance suitable for supercritical drying treatment because it is in a supercritical state at a relatively low temperature and low pressure and has a property of well dissolving an organic solvent often used for substrate treatment.
  • the fluid supply unit 57 is supplied as a processing fluid for processing the substrate S in a supercritical state, or in a gaseous or liquid state, and is given a predetermined temperature and pressure to be supercritical. Outputs a fluid that is in a critical state. For example, gaseous or liquid carbon dioxide is output under pressure.
  • the fluid is pumped to the input ports 102 and 103 provided on the (+ Y) side side surface of the processing chamber 100 via the pipe 571 and the valves 572 and 573 inserted in the middle thereof. That is, the valves 572 and 573 are opened in response to the control command from the control unit 90, so that the fluid is sent from the fluid supply unit 57 to the processing chamber 100 (supply step).
  • FIGS. 1, 2A and 2B are diagrams schematically showing the flow path of the processing fluid. More specifically, FIG. 2A is a schematic view showing the outline of the flow path, and FIG. 2B is a plan view thereof.
  • FIGS. 1, 2A and 2B are diagrams schematically showing the flow path of the processing fluid. More specifically, FIG. 2A is a schematic view showing the outline of the flow path, and FIG. 2B is a plan view thereof.
  • FIGS. 1, 2A and 2B are diagrams schematically showing the flow path of the processing fluid. More specifically, FIG. 2A is a schematic view showing the outline of the flow path, and FIG. 2B is a plan view thereof.
  • FIGS. 1, 2A and 2B are diagrams schematically showing the flow path of the processing fluid. More specifically, FIG. 2A is a schematic view showing the outline of the flow path, and FIG. 2B is a plan view thereof.
  • the fluid flow path 17 from the input ports 102 and 103 to the processing space SP functions as an introduction flow path for introducing the processing fluid supplied from the fluid supply unit 57 into the processing space SP.
  • the flow path 171 is connected to the input port 102.
  • a buffer space 172 formed so that the cross-sectional area of the flow path rapidly expands is provided.
  • a flow path 173 is further provided so as to connect the buffer space 172 and the processing space SP.
  • the flow path 173 has a wide cross-sectional shape that is narrow in the vertical direction (Z direction) and long in the horizontal direction (X direction), and the cross-sectional shape is substantially constant in the flow direction of the processing fluid.
  • the end of the flow path 171 on the opposite side of the buffer space 172 is a discharge port 174 that opens facing the processing space SP, and the processing fluid is introduced into the processing space SP from this discharge port 174.
  • the height of the flow path 173 is equal to the distance between the ceiling surface of the processing space SP and the substrate surface Sa in the state where the support tray 15 is housed in the processing space SP.
  • the discharge port 174 is open facing the gap between the ceiling surface of the processing space SP and the upper surface 151 of the support tray 15.
  • the ceiling surface of the flow path 173 and the ceiling surface of the processing space SP can be made to form the same plane.
  • the discharge port 174 is opened in a horizontally elongated slit shape facing the processing space SP.
  • a flow path for the processing fluid is formed below the support tray 15.
  • the flow path 175 is connected to the input port 103.
  • a buffer space 176 formed so that the cross-sectional area of the flow path rapidly expands is provided.
  • the flow path 177 has a wide cross-sectional shape that is narrow in the vertical direction (Z direction) and long in the horizontal direction (X direction), and the cross-sectional shape is substantially constant in the flow direction of the processing fluid.
  • the end of the flow path 177 on the opposite side of the buffer space 176 is a discharge port 178 that opens facing the processing space SP, and the processing fluid is introduced into the processing space SP from this discharge port 178.
  • the height of the flow path 177 is equal to the distance between the bottom surface of the processing space SP and the bottom surface of the support tray 15.
  • the discharge port 178 is open facing the gap between the bottom surface of the processing space SP and the bottom surface of the support tray 15.
  • the bottom surface of the flow path 177 and the bottom surface of the processing space SP can be formed on the same plane. That is, the discharge port 178 is opened in a horizontally elongated slit shape facing the processing space SP.
  • the arrangement position of the flow path 171 and the arrangement position of the flow path 173 are different in the Z direction.
  • a part of the processing fluid flowing from the flow path 171 into the buffer space 172 goes straight and flows into the flow path 173.
  • the width direction of the flow path orthogonal to the flow direction that is, in the X direction
  • This causes non-uniformity in the X direction in the flow of the processing fluid flowing from the flow path 173 into the processing space SP, which causes turbulence.
  • the straight flow of the processing fluid from the flow path 171 to the flow path 173 does not occur, and the processing fluid is treated as a uniform laminar flow in the width direction. Can be introduced into the processing space SP.
  • the processing fluid introduced from the introduction flow path 17 configured in this way flows along the upper surface and the lower surface of the support tray 15 in the processing space SP, and is processed through the exhaust flow path 18 configured as follows. It is discharged to the outside of the container (discharge process).
  • the ceiling surface of the processing space SP and the upper surface 151 of the support tray 15 both form a horizontal plane, and both face each other in parallel with a constant gap. ..
  • This gap functions as an upstream region 181 of the exhaust flow path 18 that guides the processing fluid flowing along the upper surface 151 of the support tray 15 and the surface Sa of the substrate S to the fluid discharge portion 55.
  • the upstream region 181 has a wide cross-sectional shape that is narrow in the vertical direction (Z direction) and long in the horizontal direction (X direction).
  • the buffer space 182 is a space surrounded by the processing chamber 100, the lid member 14, and the seal member 16.
  • the width of the buffer space 182 in the X direction is equal to or larger than the width of the upstream region 181 and the height of the buffer space 182 in the Z direction is larger than the height of the upstream region 181. Therefore, the buffer space 182 has a flow path cross section larger than that of the upstream region 181.
  • the downstream area 183 is connected to the upper part of the buffer space 182.
  • the downstream region 183 is a through hole provided through the first member 11 which is an upper block constituting the processing chamber 100.
  • the upper end constitutes an output port 104 that opens to the upper surface of the processing chamber 100, and the lower end thereof faces the buffer space 182.
  • the exhaust flow path 18 on the upper surface side of the support tray 15 has the following three regions, that is, An upstream region 181 formed between the upper surface 151 of the support tray 15 and the lower surface of the first member 11 and A downstream region 183 connected to the fluid discharge unit 55, An intermediate region (buffer space 182) communicating the upstream region 181 and the downstream region 183, have.
  • the upstream region 181 and the buffer space 182 have a width wider than the diameter of the substrate S in the X direction orthogonal to the flow direction Y of the processing fluid from the processing space SP, as shown in FIGS. 2A and 2B. It is provided over (corresponding to the "first width" of the present invention).
  • the width of the downstream region 183 in the X direction (corresponding to the "second width" of the present invention) is significantly narrowed. Therefore, as in the prior art, if no special device is applied to the exhaust flow path 18, backflow of the processing fluid occurs on the inlet side of the exhaust flow path 18, that is, in the upstream region 181 and the treated processing fluid is processed. May flow from the upstream region 181 into the processing space SP. Therefore, in the present embodiment, as shown in FIGS. 2A and 2B, a part of the first member 11 (partition wall 112 described later) is extended to the buffer space 182 and the end portion on the (-Y) direction side. Is finished in an uneven shape and functions as the "rectifying section" of the present invention. These points will be described in detail later.
  • the bottom surface of the processing space SP and the bottom surface of the support tray 15 both form a horizontal flat surface, and both face each other in parallel while maintaining a constant gap.
  • This gap functions as an upstream region 185 of the exhaust flow path 18 that guides the processing fluid flowing along the lower surface of the support tray 15 to the fluid discharge portion 55.
  • the upstream region 185 on the lower surface side of the support tray 15 is connected to the downstream region 187 via the buffer space 186, similarly to the upper surface side of the support tray 15.
  • the exhaust flow path 18 on the lower surface side of the support tray 15 has the following three regions, that is, An upstream region 185 formed between the lower surface of the support tray 15 and the upper surface of the second member 12 and A downstream region 187 connected to the fluid discharge unit 55, An intermediate region (buffer space 186) communicating the upstream region 185 and the downstream region 187, have.
  • the upstream region 185 and the buffer space 186 are also provided over a width wider than the diameter of the substrate S in the X direction (corresponding to the “first width” of the present invention), similarly to the upper surface side of the support tray 15. .
  • the width of the downstream region 187 in the X direction is significantly narrowed.
  • a part of the second member 12 (partition wall 122 described later) is extended to the buffer space 186 and the left end portion is finished in an uneven shape, according to the present invention. It functions as a "rectifying unit”.
  • the processing fluid flowing above the support tray 15 in the processing space SP is sent to the output port 104 via the upstream region 181 and the buffer space 182 and the downstream region 183.
  • the output port 104 is connected to the fluid discharge portion 55 by a pipe 551, and a valve 552 is inserted in the middle of the pipe 551.
  • the processing fluid flowing below the support tray 15 in the processing space SP is sent to the output port 105 via the upstream region 185, the buffer space 186, and the downstream region 187.
  • the output port 105 is connected to the fluid discharge portion 55 by a pipe 553, and a valve 554 is inserted in the middle of the pipe 553.
  • valves 552 and 554 are controlled by the control unit 90.
  • the valves 552 and 554 are opened in response to the control command from the control unit 90, the processing fluid in the processing space SP is collected by the fluid discharge unit 55 via the pipes 551 and 555.
  • FIGS. 3A, 3B, 4, 5A and 5B are diagrams illustrating the structure and rectifying section around the opening of the processing chamber. More specifically, FIG. 3A is an external view showing an opening 101 of the processing chamber 100. Further, FIG. 3B omits the illustration of the sealing member 16 and the boundary line between the first member 11 and the second member 12 from FIG. 3A in order to show the internal structure of the processing chamber 100 in an easy-to-see manner, and instead hides in FIG. 3A. The existing structure is shown by a hidden line (dotted line).
  • an annular seal member 16 is attached to the ( ⁇ Y) side end surface of the processing chamber 100, and an opening 101 is provided in an internal region surrounded by the seal member 16. More specifically, recesses 111 and 121 whose surfaces are retracted to the (+ Y) side are provided on the ( ⁇ Y) side end faces of the first member 11 and the second member 12 constituting the processing chamber 100. At the lower end of the recess 111 of the first member 11, a flange-shaped partition wall 112 having a width in the X direction equal to or slightly larger than the width of the processing space SP and thin in the vertical direction (Z direction) is formed (-. It is provided so as to project in the Y) direction.
  • the partition wall 112 is a lower end portion on the ( ⁇ Y) side of the first member 11 extending in the ( ⁇ Y) direction while facing the support tray 15, and partially comprises the upstream region 181 and the buffer space 182 as shown in FIG. It is divided into. Therefore, the processing fluid (dotted line) flowing through the upstream region 181 passes through the ( ⁇ Y) side of the partition wall 112, and further turns in the (+ Z) direction and flows into the buffer space 182. Further, in the present embodiment, the partition wall 112 is provided with two notch portions 112a at a substantially central portion in the X direction.
  • the partition wall 112 is finished in an uneven shape, and the flow rate of the processing fluid at the central portion in the X direction is increased, while the flow rate of the processing fluid at both ends in the X direction is suppressed. That is, the partition wall 112 having the uneven portion functions as the "rectifying portion" of the present invention.
  • a flange-shaped partition wall 122 having a width in the X direction equal to or slightly larger than the width of the processing space SP and thin in the vertical direction (Z direction) is (-. It is provided so as to project in the Y) direction.
  • the partition wall 122 is the upper end portion on the ( ⁇ Y) side of the second member 12 extending in the ( ⁇ Y) direction while facing the support tray 15, and partially partitions the upstream region 185 and the buffer space 186. Therefore, the processing fluid flowing through the upstream region 185 passes through the ( ⁇ Y) side of the partition wall 122, further turns in the (—Z) direction, and flows into the buffer space 186. Further, in the present embodiment, as shown in FIGS. 3A and 3B, two notch portions 122a are provided at a substantially central portion in the X direction with respect to the partition wall 122.
  • the partition wall 122 is finished in an uneven shape, and the flow rate of the processing fluid at the central portion in the X direction is increased, while the flow rate of the processing fluid at both ends in the X direction is suppressed. That is, the partition wall 122 having the uneven portion functions as the "rectifying portion" of the present invention in the same manner as the partition wall 112.
  • the upper space above the partition wall 112 functions as a buffer space 182 by closing the ( ⁇ Y) side opening with the lid member 14. Further, the lower space below the partition wall 122 functions as a buffer space 186 by closing the ( ⁇ Y) side opening thereof with the lid member 14.
  • Downstream regions 183 and 183 are connected to the upper surface of the recess 111 in the vicinity of both ends in the X direction.
  • the downstream regions 183 and 183 communicate with the output ports 104 and 104 provided on the upper surface of the first member 11.
  • downstream regions 187 and 187 are connected to the lower surface of the recess 121 in the vicinity of both ends in the X direction.
  • the downstream regions 187 and 187 communicate with the output ports 105 and 105 provided on the lower surface of the second member 12. Then, the fluid discharge unit 55 is connected to the output ports 104, 104, 105, 105 to collect the processing fluid.
  • the treatment fluid treated in a wide range in the X direction can flow into the inlet side of the exhaust flow path 18, that is, the upstream regions 181 and 185, while the exhaust flow path 18 is configured.
  • the outlet side of the above that is, in the downstream regions 183 and 187, it is necessary to let the processing fluid flow out in a narrow range in the X direction. Therefore, although the above-mentioned problems are concerned, in the first embodiment, since the partition walls 112 and 122 functioning as the rectifying unit are provided, the exhaust balance in the exhaust flow path 18 is satisfactorily adjusted. This point will be described with reference to FIGS. 4, 5A and 5B.
  • FIG. 5A is a cross-sectional view schematically showing the flow of the processing fluid in the vicinity of the notch portion of the partition wall.
  • FIG. 5B is a cross-sectional view schematically showing the flow of the processing fluid in the vicinity of the end portion in the X direction of the partition wall.
  • the partition walls 112 and 122 are retracted to the (+ Y) side and correspond to the recessed position.
  • the partition walls 112 and 122 project from the upstream region 185 toward the processing fluid flowing into the buffer space 186 and correspond to the convex portions.
  • the processing fluid flows from the upstream region 185 into the buffer space 186 at a relatively large flow rate and reaches both ends in the X direction. It is distributed to.
  • the flow rate of the processing fluid flowing from the upstream region 185 into the buffer space 186 is suppressed as compared with the central portion.
  • the partition walls 112 and 122 are provided with concave portions and convex portions corresponding to the provision of downstream regions 183 and 187 at both ends in the X direction in the exhaust flow path 18.
  • the partition walls 112 and 122 function as a rectifying unit. That is, when the processed fluid is discharged by the fluid discharge unit 55, the processed fluid flowing into the rectified position RP (FIGS. 2B and 4) provided with the partition walls 112 and 122 in the exhaust flow path 18 is rectified.
  • the balance between the flow of the processing fluid on the processing space SP side with respect to the rectification position RP and the flow of the processing fluid on the fluid discharge portion side with respect to the rectification position RP is adjusted. That is, the balance of the exhaust gas in the exhaust flow path 18 is ensured. As a result, it is possible to effectively prevent the treated processing fluid from flowing back into the processing space SP and contaminating the substrate S.
  • FIG. 6 is a diagram illustrating a structure around an opening of a processing chamber and a rectifying unit in the second embodiment of the substrate processing apparatus according to the present invention.
  • structures having substantially the same functions as those shown in FIGS. 3A and 3B are designated by the same reference numerals, and detailed description thereof will be omitted.
  • the major difference between the second embodiment and the first embodiment is the configuration of the rectifying unit. That is, in the first embodiment, a part of the first member 11 (partition wall 112) and a part of the second member 12 (partition wall 122) function as the "rectifying unit" of the present invention. On the other hand, in the second embodiment, the independent partition wall rectifying members 191 and 192 are detachable from the first member 11 and the second member 12, respectively.
  • the partition wall rectifying member 191 is an angle-shaped member having a substantially L-shaped cross section.
  • two notched portions 191a and 191a are provided at the central portion in the width direction of the blade portion extending in the (-Y) direction.
  • the other wing portion is fixed to the first member 11 by the fixing screw 113a in a state of being in close contact with the recess 101a of the first member 11.
  • the partition wall rectifying member 191 exhibits a partition wall function and a rectifying function, similarly to the partition wall 112 of the first embodiment.
  • a partition wall rectifying member 192 is consolidated at the lower portion of the opening 101b by a fixing screw 123a to exhibit a partition wall function.
  • the partition wall rectifying members 191 and 192 are detachable, the partition wall rectifying members 191 and 192 corresponding to the type and processing conditions of the substrate S can be used. For example, it is possible to prepare a plurality of partition wall rectifying members 191 and 192 having different numbers, shapes and sizes of the cutout portions 191a and 192a in advance. Then, among them, the partition wall rectifying members 191 and 192 suitable for the type of the substrate S, the processing conditions, and the like can be selected and mounted on the processing chamber 100, respectively. This makes it possible to deal with a wide variety of substrates S, processing conditions, and the like, and enhances the versatility of the substrate processing apparatus 1.
  • the processing chamber 100 mainly composed of the first to third members 11 to 13 functions as the "container body" of the present invention.
  • the lid member 14 corresponds to an example of the “cover portion” of the present invention.
  • the processing chamber 100 and the lid member 14 constitute the “processing container” of the present invention.
  • the opening 101 corresponds to the "opening" of the present invention.
  • the Y direction, the X direction and the Z direction correspond to the "first direction", the "second direction” and the "third direction” of the present invention, respectively.
  • the peripheral regions of the output ports 104 and 105 are strongly exhausted by the fluid discharge unit 55, and the (+ X) direction side and ( ⁇ X) of the exhaust flow path 18 are exhausted.
  • the end range on the directional side corresponds to an example of the "strong exhaust range” of the present invention.
  • the central range in the X direction away from the output ports 104 and 105 corresponds to an example of the "weak exhaust range" of the present invention.
  • the present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention.
  • two output ports 104, 104 (105, 105) are provided separately in the X direction, and the central range is a weak exhaust range. Therefore, the cutout portions 112a, 122a, 191a, and 192a are provided in the central portion in the X direction.
  • the arrangement position of the notch portion is not limited to this, and is arbitrary. For example, as shown in FIG.
  • the partition wall 112 (121) and the partition wall rectifying member 191 (192) are provided between the upstream region 181 (185) constituting the exhaust flow path 18 and the buffer space 182 (186).
  • the application of the present invention is not limited to this.
  • the present invention can be applied to the substrate processing apparatus shown in FIGS. 8A, 8B, 9A and 9B.
  • FIG. 8A is a plan view of the flow path of the processing fluid according to the fifth embodiment of the substrate processing apparatus according to the present invention. Further, FIG. 8B is a perspective view showing an example of a rectifying unit used in the fifth embodiment. Further, FIG. 9A is a cross-sectional view schematically showing the flow of the processing fluid in the vicinity of the central portion in the width direction. Further, FIG. 9B is a cross-sectional view schematically showing the flow of the processing fluid in the vicinity of the end portion in the width direction.
  • the partition wall and the partition wall rectifying member are not provided, and the processing fluid flowing in the ( ⁇ Y) direction from the processing space SP passes through the upstream regions 181 and 185.
  • the rectifying unit 20 is attached to the lower surface of the first member 11 so that the uneven surface (lower surface) of the rectifying unit 20 shown in FIG. 8B faces the upstream region 181.
  • the upstream region 185 is similarly configured. That is, the rectifying unit 21 configured in the same manner as the rectifying unit 20 is attached to the upper surface of the second member 12 so that its uneven surface (upper surface) faces the upstream region 185.
  • the rectifying units 20 and 21 have a plate shape extending in the X direction.
  • the rectifying unit 20 has a concavo-convex shape in which notch portions 201 and 201 are formed in the center of the lower surface, and rectifies the processing fluid flowing from the upstream region 181 to the buffer space 182 at the outlet position (rectifying position RP) of the upstream region 181. do.
  • the rectifying unit 21 has a concavo-convex shape in which cutout portions 211 and 211 are formed in the center of the upper surface, and allows the processing fluid flowing from the upstream region 185 to the buffer space 186 at the outlet position (rectifying position RP) of the upstream region 185. Rectify. Therefore, the same effect as that of the above embodiment can be obtained.
  • the present invention is applied to an apparatus in which the output ports 104 and 105 are provided on both sides in the X direction, only on the (+ X) direction side, and only on the ( ⁇ X) direction side, but the output port 104 , 105 can also be applied to the device provided in the central portion in the X direction.
  • the output ports 104 and 105 when the output ports 104 and 105 are provided in the central portion in the X direction, it is desirable that the cutout portions 112a, 122a, 191a and 192a are provided at both ends in the X direction (sixth embodiment). ).
  • the central range in the X direction corresponds to the "strong exhaust range” of the present invention
  • the end range is “weak exhaust”.
  • range corresponds to "range”. Therefore, by providing the cutout portions 112a, 122a, 191a, and 192a, the processing fluid flows from the upstream region into the buffer space at a relatively large flow rate in the end range.
  • the partition walls 112 and 122 are not provided with notched portions in the central range, the flow rate of the processing fluid flowing into the buffer space from the upstream region is suppressed as compared with the end portions.
  • the partition walls 112, 122 in which the uneven portions are formed by the cutout portions 112a, 122a, 191a, 192a provided at the end portions function as the "rectifying portion" of the present invention.
  • the inlet side (processing space SP side) of the exhaust flow path 18 is opened in a slit shape extending in the X direction, so that the processing fluid flowing through the processing space SP can be efficiently taken in. It has become.
  • the configuration of the exhaust flow path 18 on the inlet side is not limited to this, and the exhaust flow path is configured to take in the processing fluid through, for example, a punching plate in which a plurality of through holes are arranged in the X direction.
  • the present invention can be applied to a substrate processing apparatus having the above. That is, the present invention can also be applied to the devices described in Patent Documents 1 to 4, and the same effects as those of the above-described embodiment can be obtained.
  • the exhaust flow path 18 is composed of three types of regions, that is, an upstream region, an intermediate region (buffer space), and a downstream region.
  • the present invention can be applied to a substrate processing apparatus in which the exhaust flow path 18 is composed of an upstream region and a downstream region.
  • the present invention can be applied to all substrate processing techniques for processing a substrate with a processing fluid in a processing container.
  • it can be applied to a process using a high-pressure fluid, for example, a substrate drying process for drying a substrate such as a semiconductor substrate with a supercritical fluid.
  • Substrate processing device 14 ... Cover member 15 ... Support tray 18 ... Exhaust flow path 20, 21 ... Rectifying unit 55 ... Fluid discharge unit 100 ... Processing chamber (container body) 112, 122 ... partition wall (rectifying part) 181 185 ... upstream area 182, 186 ... buffer space (intermediate area) 183, 187 ... Downstream area 191, 192 ... Bulkhead rectifying member (rectifying unit) RP ... Rectification position S ... Board SP ... Processing space X ... Second direction Y ... First direction Z ... Third direction

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

La présente invention concerne un appareil de traitement de substrat comprenant : un récipient de traitement dans lequel un substrat est logé dans un espace de traitement, une unité d'alimentation en fluide qui fournit un fluide de traitement pour un traitement supercritique à l'espace de traitement, une unité d'évacuation de fluide qui évacue le fluide de traitement de l'espace de traitement à travers un trajet d'écoulement d'évacuation formé dans le récipient de traitement en communication avec l'espace de traitement, et une unité de réglage d'écoulement disposée au niveau d'une position de réglage d'écoulement du trajet d'écoulement d'évacuation, l'unité de réglage d'écoulement réglant l'équilibre entre l'écoulement du fluide de traitement sur le côté espace de traitement par rapport à la position de réglage d'écoulement et l'écoulement du fluide de traitement sur le côté unité d'évacuation de fluide par rapport à la position de réglage d'écoulement par réglage de l'écoulement du fluide de traitement qui s'écoule vers la position de réglage d'écoulement lorsque le fluide de traitement est évacué par l'unité d'évacuation de fluide.
PCT/JP2021/042906 2020-11-25 2021-11-24 Appareil et procédé de traitement de substrat WO2022113971A1 (fr)

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JP2020194879A JP2022083526A (ja) 2020-11-25 2020-11-25 基板処理装置および基板処理方法
JP2020-194879 2020-11-25

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036109A (ja) * 2005-07-29 2007-02-08 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2008073611A (ja) * 2006-09-21 2008-04-03 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2018147945A (ja) * 2017-03-02 2018-09-20 東京エレクトロン株式会社 基板処理装置
JP2018207076A (ja) * 2017-06-09 2018-12-27 東京エレクトロン株式会社 基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6970515B2 (ja) * 2017-03-08 2021-11-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036109A (ja) * 2005-07-29 2007-02-08 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2008073611A (ja) * 2006-09-21 2008-04-03 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2018147945A (ja) * 2017-03-02 2018-09-20 東京エレクトロン株式会社 基板処理装置
JP2018207076A (ja) * 2017-06-09 2018-12-27 東京エレクトロン株式会社 基板処理装置

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