WO2022111567A1 - 半导体工艺设备及功率控制方法 - Google Patents

半导体工艺设备及功率控制方法 Download PDF

Info

Publication number
WO2022111567A1
WO2022111567A1 PCT/CN2021/133048 CN2021133048W WO2022111567A1 WO 2022111567 A1 WO2022111567 A1 WO 2022111567A1 CN 2021133048 W CN2021133048 W CN 2021133048W WO 2022111567 A1 WO2022111567 A1 WO 2022111567A1
Authority
WO
WIPO (PCT)
Prior art keywords
bias voltage
difference
voltage value
value
electrode assembly
Prior art date
Application number
PCT/CN2021/133048
Other languages
English (en)
French (fr)
Inventor
卫晶
陈星�
韦刚
杨京
单国道
Original Assignee
北京北方华创微电子装备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to KR1020237017163A priority Critical patent/KR20230091151A/ko
Priority to US18/254,062 priority patent/US20240006170A1/en
Priority to JP2023530718A priority patent/JP2023550467A/ja
Publication of WO2022111567A1 publication Critical patent/WO2022111567A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Definitions

  • the present invention relates to the field of semiconductor process equipment, in particular, to a semiconductor process equipment and a power control method.
  • Plasma contains a large number of active particles such as electrons, ions (including positive and negative ions), excited atoms, molecules and free radicals. These active particles interact with the surface of the wafer placed in the cavity and exposed to the plasma, making the Various physical and chemical reactions occur on the surface of the wafer material, thereby changing the surface properties of the material and completing etching or other processes.
  • active particles such as electrons, ions (including positive and negative ions), excited atoms, molecules and free radicals.
  • the present invention aims to provide a semiconductor process equipment and a power control method, which can more accurately control the plasma density in a process chamber, thereby improving process consistency between different process chambers.
  • the present invention provides a semiconductor process equipment, including an upper electrode assembly, a process chamber and a power adjustment assembly, wherein a chuck for carrying a wafer is arranged in the process chamber, wherein,
  • the upper electrode assembly is used to excite the process gas in the process chamber to form plasma
  • the power adjustment component is used to detect the bias voltage value on the upper surface of the chuck in real time, and calculate the difference between the bias voltage value and the target bias voltage value, and when the difference is greater than a preset threshold , adjusting the output power value of the upper electrode assembly according to the difference value until the difference value is less than or equal to the preset threshold value.
  • the power adjustment component includes a voltage comparator and a voltage sensor, wherein,
  • the voltage sensor is used to detect the bias voltage value on the upper surface of the chuck in real time, and send the bias voltage value to the voltage comparator;
  • the voltage comparator is used to calculate the difference between the bias voltage value and the target bias voltage value, and when the difference value is greater than the preset threshold, compare the bias voltage value with the target bias voltage value, if the bias voltage value is lower than the target bias voltage value, reduce the output power value of the upper electrode assembly; if the bias voltage value is higher than the target bias voltage value, Then, the output power value of the upper electrode assembly is increased; when the difference is less than or equal to the preset threshold, the output power value of the upper electrode assembly is kept unchanged.
  • the adjustment range by which the voltage comparator adjusts the output power value of the upper electrode assembly is positively correlated with the difference between the bias voltage value and the target bias voltage value.
  • the voltage comparator is configured to determine, according to a difference interval corresponding to the difference, and a preset correspondence between the difference interval and the adjustment range, the voltage comparator corresponding to the difference. Adjust the amplitude, and adjust the output power value of the upper electrode assembly according to the adjustment amplitude.
  • the corresponding relationship between the difference interval and the adjustment range includes:
  • the first difference interval the difference is greater than or equal to 50% of the target bias voltage value
  • Second difference interval the difference is greater than or equal to 20% of the target bias voltage value and less than 50% of the target bias voltage value
  • the third difference interval the difference is greater than or equal to 5% of the target bias voltage value and less than 20% of the target bias voltage value;
  • Fourth difference interval the difference is greater than or equal to 1% of the target bias voltage value and less than 5% of the target bias voltage value
  • the first adjustment range corresponding to the first difference interval is larger than the second adjustment range corresponding to the second difference interval, and the second adjustment range is larger than the third adjustment range corresponding to the third difference interval , the third adjustment range is greater than the fourth adjustment range corresponding to the fourth difference interval.
  • the first adjustment amplitude is greater than or equal to 50W
  • the second adjustment amplitude is greater than or equal to 20W
  • the third adjustment amplitude is greater than or equal to 5W
  • the fourth adjustment amplitude is greater than or equal to 1W.
  • the preset threshold value is 1% of the target bias voltage value.
  • the voltage sensor is used to detect the radio frequency voltage of the ceramic material layer, and convert the radio frequency voltage into the Bias voltage value.
  • the voltage sensor is used to detect the radio frequency voltage value of the ceramic material layer in real time, and according to the preset radio frequency voltage value and The corresponding relationship of the bias voltage values converts the radio frequency voltage value into the bias voltage value.
  • the voltage sensor is used to detect the DC voltage on the upper surface of the metal layer in real time, and the DC voltage is the bias voltage. value.
  • the present invention also provides a power control method, which is applied to the above-mentioned semiconductor process equipment provided by the present invention, and the power control method includes:
  • calculating the difference between the bias voltage value and the target bias voltage value, and when the difference is greater than a preset threshold, adjusting the output power value of the upper electrode assembly according to the difference , until the difference is less than or equal to the preset threshold including:
  • the adjustment range for adjusting the output power value of the upper electrode assembly is positively correlated with the difference between the bias voltage value and the target bias voltage value.
  • the difference interval corresponding to the difference determines the adjustment range corresponding to the difference, and press the The adjustment amplitude adjusts the output power value of the upper electrode assembly.
  • the corresponding relationship between the difference interval and the adjustment range includes:
  • the first difference interval the difference is greater than or equal to 50% of the target bias voltage value
  • Second difference interval the difference is greater than or equal to 20% of the target bias voltage value and less than 50% of the target bias voltage value
  • the third difference interval the difference is greater than or equal to 5% of the target bias voltage value and less than 20% of the target bias voltage value;
  • Fourth difference interval the difference is greater than or equal to 1% of the target bias voltage value and less than 5% of the target bias voltage value
  • the first adjustment range corresponding to the first difference interval is larger than the second adjustment range corresponding to the second difference interval, and the second adjustment range is larger than the third adjustment range corresponding to the third difference interval , the third adjustment range is greater than the fourth adjustment range corresponding to the fourth difference interval.
  • the power adjustment component can detect the bias voltage value on the upper surface of the chuck in real time, and calculate the difference between the bias voltage value and the target bias voltage value and determine whether the density of the plasma in the current process chamber is normal by judging whether the difference exceeds the preset threshold, and automatically adjusts the output power value of the upper electrode assembly according to the difference when the difference is greater than the preset threshold . Therefore, the embodiments of the present invention characterize the density state of the plasma by detecting the bias voltage value, and perform real-time feedback adjustment, so as to accurately control the plasma density in the semiconductor process, and compensate for the inconsistencies caused by hardware such as coils and dielectric windows. differences, which can improve process uniformity between different process chambers.
  • FIG. 1 is a schematic structural diagram of a semiconductor process equipment provided by an embodiment of the present invention.
  • FIG. 2 is a block flow diagram of a power control method provided by an embodiment of the present invention.
  • the inventor of the present invention found that the main reason for the poor consistency of the process chambers in the existing semiconductor process equipment is that there are differences between the coils, dielectric windows and other hardware of different process chambers in the existing semiconductor process equipment.
  • the RF current flowing through the coil is usually indirectly controlled by controlling the RF parameters of the plasma discharge.
  • the RF current flowing through the coil and the RF power loaded by the power supply may not have a one-to-one correspondence.
  • the current on the coil cannot be completely consistent. , which makes it difficult to change the adjustment scheme of the coil current by controlling the RF power loaded by the power supply, and it is also difficult to ensure the consistency of plasma parameters and the repeatability of the process.
  • the present invention provides a semiconductor process equipment, as shown in FIG. 1 , which includes an upper electrode assembly, a process chamber 6 and a power adjustment assembly, and the process chamber 6 is provided with a card for carrying wafers.
  • Disc 9 can be electrostatic chuck, Echuck).
  • the upper electrode assembly is used to excite the process gas in the process chamber 6 to form plasma.
  • the power adjustment component is used to detect the bias voltage value (such as DC bias, DC Bias) on the upper surface of the chuck 9 in real time, and calculate the difference between the bias voltage value and the target bias voltage value, and at the difference value When it is greater than the preset threshold, the output power value of the upper electrode assembly is adjusted according to the difference until the difference is less than or equal to the preset threshold.
  • the bias voltage value such as DC bias, DC Bias
  • the inventor of the present invention has found through research that the bias voltage value on the upper surface of the chuck 9 can accurately reflect the density of the plasma 10 above the chuck 9 (specifically, the ion density in the plasma 10 ) in real time.
  • the expression of the plasma sheath voltage V(t) with time can be obtained as:
  • I 0 is the amplitude of the radio frequency current received by the lower electrode on the chuck 9
  • ⁇ 0 is the dielectric constant
  • e is the amount of electrons
  • ⁇ is the angular frequency of the radio frequency signal received by the lower electrode
  • n is the plasma 10
  • the density of (specifically, the ion density), A is the plate area of the lower electrode. It can be seen from the above expression that when the lower RF current amplitude I 0 , the angular frequency ⁇ and the plate area A remain unchanged, the plasma sheath voltage V(t) and the plasma density n (and the upper electrode 5 coupled power) is inversely proportional.
  • the sheath voltage V(t) is directly related to the bias voltage value on the upper surface of the chuck 9 and has the same changing trend. Therefore, only by detecting the bias voltage value on the upper surface of the chuck 9 in real time, it can be determined whether the plasma density n is in the normal range according to the bias voltage value.
  • the upper electrode assembly may include a radio frequency power supply 1 and an upper electrode 5, and the upper electrode 5 is, for example, a coil.
  • the power adjustment component changes the current on the upper electrode 5 by adjusting the power of the radio frequency power supply 1 (ie, the output power value of the upper electrode component), thereby controlling the density of the plasma.
  • the power adjustment component can detect the bias voltage value on the upper surface of the chuck 9 in real time, calculate the difference between the bias voltage value and the target bias voltage value, and determine the Whether the difference exceeds the preset threshold value determines whether the plasma density in the current process chamber is normal, and when the difference value is greater than the preset threshold value, the output power value of the upper electrode assembly is automatically adjusted according to the difference value. Therefore, in the embodiment of the present invention, the density state of the plasma is characterized by detecting the bias voltage value, and real-time feedback adjustment is performed to accurately control the plasma density in the semiconductor process, and compensate for the inconsistency caused by hardware such as coils and dielectric windows. differences, which can improve process uniformity between different process chambers.
  • the power adjustment component directly adjusts the output power value of the upper electrode component in real time according to the density n of the plasma 10 , without considering the influence of other structures in the process chamber on the plasma density, such as , the density n of the plasma can be changed by adjusting the output power value of the upper electrode assembly under the condition that the power of the lower electrode remains unchanged.
  • the embodiment of the present invention can be applied to insulating and non-insulating chuck structures installed in the process chamber 6, and can be applied to ICP radio frequency plasma sources of 13.56 MHz and other frequencies.
  • the power adjustment assembly may include a voltage comparator 12 and a voltage Sensor 131, where:
  • the voltage sensor 131 is used to detect the bias voltage value on the upper surface of the chuck 9 in real time, and send the bias voltage value to the voltage comparator 12 .
  • the voltage comparator 12 is used to calculate the difference between the bias voltage value and the target bias voltage value V0, and when the difference is greater than a preset threshold, compare the bias voltage value and the target bias voltage value V0, if the If the bias voltage value is lower than the target bias voltage value V0 (that is, the density n of the plasma 10 is higher than the preset standard), the output power value of the upper electrode assembly is reduced to reduce the density n of the plasma 10; When the voltage value is higher than the target bias voltage value V0 (ie, the ion density n of the plasma 10 is lower than the preset standard), the output power value of the upper electrode assembly is increased to increase the density n of the plasma 10 .
  • the voltage comparator 12 keeps the upper electrode assembly when the difference is less than or equal to the preset threshold value. The output power value remains unchanged.
  • the preset threshold value may be an allowable accuracy range around the target bias voltage V0, that is, the preset threshold value is ⁇ Vth among V0 ⁇ Vth.
  • This embodiment of the present invention does not specifically limit the size of the preset threshold ⁇ Vth.
  • the preset threshold ⁇ Vth may be 1% of the target bias voltage value V0, that is, the voltage comparator 12 is at the bias voltage When the value is within the interval of (1 ⁇ 1%) V0, the output power value of the upper electrode assembly is kept unchanged.
  • the adjustment range of the output power value of the upper electrode assembly adjusted by the power adjustment assembly is positively correlated with the difference ⁇ V between the bias voltage value and the target bias voltage value V0 , so that when the difference ⁇ V is large (that is, when the density n of the plasma 10 differs greatly from the preset standard), the output power value of the upper electrode assembly is adjusted to a greater extent to improve the adjustment efficiency.
  • the voltage comparator 12 is used to determine the difference corresponding to the difference according to the difference interval corresponding to the above difference and the corresponding relationship between the preset difference interval and the adjustment amplitude. Adjust the amplitude, and adjust the output power value of the upper electrode assembly according to the adjustment amplitude.
  • the embodiment of the present invention does not specifically limit how to divide the difference interval.
  • the corresponding relationship between the above-mentioned difference interval and the adjustment range includes:
  • the first difference interval the above difference
  • Second difference interval the above difference
  • the third difference interval the above difference
  • is greater than or equal to 1% of the target bias voltage value V0 and less than 5% of the target bias voltage value V0, that is, 1% ⁇ V0 ⁇
  • the first adjustment range corresponding to the first difference interval is larger than the second adjustment range corresponding to the second difference interval
  • the second adjustment range is larger than the third adjustment range corresponding to the third difference interval
  • the third adjustment range is larger than the fourth adjustment range.
  • the embodiment of the present invention does not specifically limit the preset adjustment range (that is, the adjustment step ⁇ P of the output power value of the upper electrode assembly) corresponding to each difference interval.
  • the first adjustment amplitude is greater than or equal to 50W
  • the second adjustment amplitude is greater than or equal to 20W
  • the third adjustment amplitude is greater than or equal to 5W
  • the fourth adjustment amplitude is greater than or equal to 1W.
  • the voltage comparator 12 is used to adjust the output power value of the upper electrode assembly according to the step size of 50W when the difference is in the above-mentioned first difference interval; when the difference is in the above-mentioned second difference interval, according to 20W.
  • the output power value of the upper electrode assembly is adjusted by the step size of the upper electrode assembly; when the difference value is in the above-mentioned third difference value interval, the output power value of the upper electrode assembly is adjusted according to the step size of 5W; when the difference value is in the above-mentioned fourth difference value interval, The output power value of the upper electrode assembly was adjusted in steps of 1W.
  • the radio frequency power supply 1 loads power to the upper electrode 5 (which may be a coupling coil) through the matching device 2 , and the process gas passes through
  • the nozzle 11 installed on the quartz dielectric window 7 enters the process chamber 6 (the lining and focus ring in the process chamber are not marked), and the RF energy on the upper electrode 5 is coupled to the process through the dielectric window 7
  • a plasma 10 is generated, which acts on the wafer 8
  • the wafer 8 is placed on the chuck 9
  • the bias RF power source 4 loads the RF energy on the RF copper column located at the bottom of the chuck 9 through the matching device 3, thereby
  • a radio frequency field is provided, a radio frequency bias voltage is generated, and an ion acceleration sheath is formed on the surface of the wafer to etch the wafer 9 .
  • the power adjustment component further includes an analog-to-digital converter 132, wherein the voltage sensor 131 is used to detect the bias voltage value on the chuck 9 in real time, and convert the detected bias voltage value to a
  • the analog signal is output to the analog-to-digital converter 132, and the analog-to-digital converter 132 has an analog-to-digital conversion function for converting the bias voltage value sent by the voltage sensor 131 in the form of an analog signal into a digital signal, and converting the digital signal Sent to voltage comparator 12.
  • the embodiment of the present invention does not specifically limit the structure type of the chuck 9.
  • the voltage sensor 131 may be a The radio frequency voltage sensor is used to detect the radio frequency voltage value of the ceramic material layer in real time, and convert the radio frequency voltage value into a bias voltage value according to the preset corresponding relationship between the radio frequency voltage value and the bias voltage value.
  • the RF voltage sensor detects the RF voltage signal Vpp closest to the upper surface of the chuck in real time to represent the bias voltage value above the wafer, and the analog-to-digital converter 132 is used for the RF signal collected by the RF voltage sensor. It is converted into detection voltage information, and the detection voltage information is sent to the voltage comparator 12 .
  • the voltage sensor 131 may be a DC voltage sensor, which is used to detect the DC voltage value of the metal layer in real time. is the bias voltage value.
  • the analog-to-digital converter 132 is used to convert the analog signal detected by the DC voltage sensor into a digital signal, and send the digital signal to the voltage comparator 12 .
  • the present invention also provides a power control method, which is applied to the above-mentioned semiconductor process equipment provided by the present invention, and the power control method includes the following steps:
  • the output power value of the upper electrode assembly can be directly adjusted in real time according to the above difference value, without considering the influence of other structures in the process chamber on the plasma density.
  • the output power value of the electrode assembly changes the density of the plasma.
  • step S2 specifically includes:
  • the adjustment range for adjusting the output power value of the upper electrode assembly is positively related to the difference between the bias voltage value and the target bias voltage value. That is to say, when the difference is large (that is, when the plasma density differs greatly from the preset standard), the output power value of the upper electrode assembly can be adjusted to a greater extent, so as to improve the power adjustment efficiency of the upper electrode assembly.
  • the difference value corresponding to the difference value can be determined according to the difference value interval corresponding to the difference value and the corresponding relationship between the preset difference value interval and the adjustment range. Adjust the amplitude, and adjust the output power value of the upper electrode assembly according to the adjustment amplitude.
  • the corresponding relationship between the difference interval and the adjustment range specifically includes:
  • the first difference interval the above difference
  • Second difference interval the above difference
  • the third difference interval the above difference
  • is greater than or equal to 1% of the target bias voltage value V0 and less than 5% of the target bias voltage value V0, that is, 1% ⁇ V0 ⁇
  • the first adjustment range corresponding to the first difference interval is larger than the second adjustment range corresponding to the second difference interval
  • the second adjustment range is larger than the third adjustment range corresponding to the third difference interval
  • the third adjustment range is larger than the fourth adjustment range.
  • the power control method provided by the present invention characterizes the density state of the plasma by detecting the bias voltage value, and performs real-time feedback adjustment, so as to accurately control the plasma density in the semiconductor process, and compensate for the inconsistency caused by hardware inconsistencies such as coils and dielectric windows. differences, which can improve process uniformity between different process chambers.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

本发明提供一种半导体工艺设备及功率控制方法，该设备包括上电极组件、工艺腔室以及功率调整组件，工艺腔室中设置有用于承载晶圆的卡盘，其中，上电极组件用于激发工艺腔室中的工艺气体形成等离子体；功率调整组件用于实时检测卡盘上表面的偏置电压值，并计算偏置电压值与目标偏置电压值的差值，且在差值大于预设阈值时，根据差值调节上电极组件的输出功率值，直至差值小于等于预设阈值。本发明提供的半导体工艺设备能够更精确地控制工艺腔室中等离子体密度，从而可以提高不同工艺腔室之间的工艺一致性。

Description

半导体工艺设备及功率控制方法 技术领域
本发明涉及半导体工艺设备领域，具体地，涉及一种半导体工艺设备及功率控制方法。
背景技术
随着半导体元器件制造工艺的迅速发展，对元器件性能与集成度要求越来越高，使得等离子体技术得到了极广泛的应用。在等离子体刻蚀或沉积系统中，通过在真空反应腔室内引入各种反应气体，如氯气(Cl 2)、六氟化硫(SF 6)、八氟环丁烷(C 4F 8)、氧气(O 2)等，利用外加电磁场(直流或交流)使气体原子内束缚电子摆脱势阱成为自由电子，获得动能的自由电子再与分子、原子或离子产生碰撞使得气体完全解离，形成等离子体。等离子体中含有大量电子、离子(包括正离子和负离子)、激发态原子、分子和自由基等活性粒子，这些活性粒子和置于腔体并曝露在等离子体中的晶圆表面相互作用，使晶圆材料表面发生各种物理化学反应，从而使材料表面性能发生变化，完成刻蚀或其他工艺过程。在用于半导体制造工艺的等离子体设备的研发中，最重要的因素是增大对晶圆的加工能力，以便提高产能，以及执行用于制造高度集成器件工艺的能力。
随着集成电路特征尺寸不断减小，对加工工艺的要求也越来越严格，其中一个很重要的要求是刻蚀产品的一致性问题，在工艺过程中，对同一型号机台的所有腔室的工艺结果一致性均需做严格要求，以避免由于各腔室的一致性问题造成的工艺风险，因此不同腔室间需要通过严格的过程管控，实现工艺结果一致性。
然而，现有的半导体工艺设备中，不同工艺腔室之间的一致性较差，不 同工艺腔室中产生的等离子体密度之间存在难以消除的差异，从而造成产品质量不稳定。
发明内容
本发明旨在提供一种半导体工艺设备及功率控制方法，其能够更精确地控制工艺腔室中等离子体密度，从而可以提高不同工艺腔室之间的工艺一致性。
为实现上述目的，本发明提供一种半导体工艺设备，包括上电极组件、工艺腔室以及功率调整组件，所述工艺腔室中设置有用于承载晶圆的卡盘，其中，
所述上电极组件用于激发所述工艺腔室中的工艺气体形成等离子体；
所述功率调整组件用于实时检测所述卡盘上表面的偏置电压值，并计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于预设阈值时，根据所述差值调节所述上电极组件的输出功率值，直至所述差值小于等于所述预设阈值。
可选地，所述功率调整组件包括电压比较器和电压传感器，其中，
所述电压传感器用于实时检测所述卡盘上表面的所述偏置电压值，并将所述偏置电压值发送至所述电压比较器；
所述电压比较器用于计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于所述预设阈值时，比较所述偏置电压值与所述目标偏置电压值，若所述偏置电压值低于所述目标偏置电压值，则减小所述上电极组件的输出功率值；若所述偏置电压值高于所述目标偏置电压值，则增大所述上电极组件的输出功率值；在所述差值小于等于所述预设阈值时，保持所述上电极组件的输出功率值不变。
可选地，所述电压比较器调节所述上电极组件的输出功率值的调节幅度 与所述偏置电压值和所述目标偏置电压值的差值正相关。
可选地，所述电压比较器用于根据与所述差值对应的差值区间，以及预设的所述差值区间与所述调节幅度的对应关系，确定与所述差值对应的所述调节幅度，并按该调节幅度调节所述上电极组件的输出功率值。
可选地，所述差值区间与所述调节幅度的对应关系，包括：
第一差值区间：所述差值大于等于所述目标偏置电压值的50％；
第二差值区间：所述差值大于等于所述目标偏置电压值的20％，且小于所述目标偏置电压值的50％；
第三差值区间：所述差值大于等于所述目标偏置电压值的5％，且小于所述目标偏置电压值的20％；
第四差值区间：所述差值大于等于所述目标偏置电压值的1％，且小于所述目标偏置电压值的5％；
其中，所述第一差值区间对应的第一调节幅度大于所述第二差值区间对应的第二调节幅度，所述第二调节幅度大于所述第三差值区间对应的第三调节幅度，所述第三调节幅度大于所述第四差值区间对应的第四调节幅度。
可选地，所述第一调节幅度大于等于50W，所述第二调节幅度大于等于20W，所述第三调节幅度大于等于5W，所述第四调节幅度大于等于1W。
可选地，所述预设阈值为所述目标偏置电压值的1％。
可选地，在所述卡盘的上表面为陶瓷材料层时，所述电压传感器用于检测所述陶瓷材料层的射频电压，并根据预设的对应关系将所述射频电压转换为所述偏置电压值。
可选地，在所述卡盘的上表面为陶瓷材料层的上表面时，所述电压传感器用于实时检测所述陶瓷材料层的射频电压值，并根据预设的所述射频电压值与所述偏置电压值的对应关系将所述射频电压值转换为所述偏置电压值。
可选地，在所述卡盘的上表面为金属层的上表面时，所述电压传感器用 于实时检测所述金属层的上表面的直流电压，所述直流电压即为所述偏置电压值。
作为另一个技术方案，本发明还提供一种功率控制方法，应用于本发明提供的上述半导体工艺设备，所述功率控制方法包括：
在所述上电极组件激发所述工艺腔室中的工艺气体形成等离子体之后，实时检测所述卡盘上表面的偏置电压值；
计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于预设阈值时，根据所述差值调节所述上电极组件的输出功率值，直至所述差值小于等于所述预设阈值。
可选地，所述计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于预设阈值时，根据所述差值调节所述上电极组件的输出功率值，直至所述差值小于等于所述预设阈值，包括：
计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于所述预设阈值时，比较所述偏置电压值与所述目标偏置电压值，若所述偏置电压值低于所述目标偏置电压值，则减小所述上电极组件的输出功率值；若所述偏置电压值高于所述目标偏置电压值，则增大所述上电极组件的输出功率值；在所述差值小于等于所述预设阈值时，保持所述上电极组件的输出功率值不变。
可选地，调节所述上电极组件的输出功率值的调节幅度与所述偏置电压值和所述目标偏置电压值的差值正相关。
可选地，根据与所述差值对应的差值区间，以及预设的所述差值区间与所述调节幅度的对应关系，确定与所述差值对应的所述调节幅度，并按该调节幅度调节所述上电极组件的输出功率值。
可选地，所述差值区间与所述调节幅度的对应关系，包括：
第一差值区间：所述差值大于等于所述目标偏置电压值的50％；
第二差值区间：所述差值大于等于所述目标偏置电压值的20％，且小于所述目标偏置电压值的50％；
第三差值区间：所述差值大于等于所述目标偏置电压值的5％，且小于所述目标偏置电压值的20％；
第四差值区间：所述差值大于等于所述目标偏置电压值的1％，且小于所述目标偏置电压值的5％；
其中，所述第一差值区间对应的第一调节幅度大于所述第二差值区间对应的第二调节幅度，所述第二调节幅度大于所述第三差值区间对应的第三调节幅度，所述第三调节幅度大于所述第四差值区间对应的第四调节幅度。
在本发明实施例提供的半导体工艺设备及功率控制方法的技术方案中，功率调整组件能够实时检测卡盘上表面的偏置电压值，并计算该偏置电压值与目标偏置电压值的差值，且通过判断该差值是否超出预设阈值来确定当前工艺腔室中等离子体的密度是否正常，并在上述差值大于预设阈值时根据该差值自动调节上电极组件的输出功率值。由此，本发明实施例是通过检测偏置电压值来表征等离子体的密度状态，并进行实时反馈调节，以准确地控制半导体工艺中等离子体密度，补偿因线圈、介质窗等硬件不一致带来的差异，从而可以提高不同工艺腔室之间的工艺一致性。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是本发明实施例提供的半导体工艺设备的结构示意图；
图2是本发明实施例提供的功率控制方法的流程框图。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
本发明的发明人在研究后发现，现有的半导体工艺设备中工艺腔室一致性差的主要原因在于，现有的半导体工艺设备中不同工艺腔室的线圈、介质窗等硬件之间存在差异，例如，对于电感耦合等离子体设备来说，通常是通过控制等离子体放电的射频参数来间接控制流经线圈的射频电流大小，但是，由于等离子体阻抗的非线性特征，以及受到线圈的加工、安装等不定因素影响，流过线圈的射频电流大小与电源加载的射频功率可能不是一一对应的关系，不同的工艺腔室之间，即使电源加载的射频功率相同，线圈上的电流也无法完全一致，这使得通过控制电源加载的射频功率来改变线圈电流的调节方案，也很难保证等离子体参数的一致性和工艺的重复性。
为解决上述技术问题，本发明提供一种半导体工艺设备，如图1所示，其包括上电极组件、工艺腔室6以及功率调整组件，该工艺腔室6中设置有用于承载晶圆的卡盘9(可以为静电卡盘，Echuck)。
其中，上电极组件用于激发工艺腔室6中的工艺气体形成等离子体。功率调整组件用于实时检测卡盘9上表面的偏置电压值(例如为直流偏压，DC Bias)，并计算该偏置电压值与目标偏置电压值的差值，且在该差值大于预设阈值时，根据该差值调节上电极组件的输出功率值，直至该差值小于等于预设阈值。
本发明的发明人经过研究发现，卡盘9上表面的偏置电压值可以实时、准确地反映该卡盘9上方等离子体10的密度(具体为等离子体10中的离子密度)，具体地，根据泊松方程可得等离子体鞘层电压V(t)随时间变化的表达式为：
Figure PCTCN2021133048-appb-000001
其中，I 0为卡盘9上的下电极接收到的射频电流幅值，ε 0为介电常数，e 为电子电量，ω为下电极接收到的射频信号的角频率，n为等离子体10的密度(具体为离子密度)，A为下电极的极板面积。由上述表达式可知，在下射频电流幅值I 0、角频率ω、极板面积A均保持不变的情况下，等离子体鞘层电压V(t)与等离子体的密度n(以及上电极5的耦合功率)成反比。
鞘层电压V(t)与卡盘9上表面的偏置电压值直接相关且变化趋势相同。因此，仅需实时检测卡盘9上表面的偏置电压值，即可根据该偏置电压值判断等离子体的密度n是否处在正常范围。
本发明实施例对上电极组件的结构不做具体限定，例如，该上电极组件可以包括射频电源1和上电极5，上电极5例如为线圈。功率调整组件通过调节射频电源1的功率(即，上电极组件的输出功率值)，来改变上电极5上的电流大小，进而实现对等离子体的密度的控制。
在本发明实施例提供的半导体工艺设备中，功率调整组件能够实时检测卡盘9上表面的偏置电压值，并计算该偏置电压值与目标偏置电压值的差值，且通过判断该差值是否超出预设阈值来确定当前工艺腔室中等离子体的密度是否正常，并在上述差值大于预设阈值时根据该差值自动调节上电极组件的输出功率值。由此，本发明实施例是通过检测偏置电压值来表征等离子体的密度状态，并进行实时反馈调节，以准确地控制半导体工艺中等离子体密度，补偿因线圈、介质窗等硬件不一致带来的差异，从而可以提高不同工艺腔室之间的工艺一致性。
此外，本发明实施例提供的半导体工艺设备中，功率调整组件直接根据等离子体10的密度n实时调节上电极组件的输出功率值，无需考虑工艺腔室中其他结构对等离子体密度的影响，例如，可以在下电极功率不变的情况下，通过调节上电极组件的输出功率值来改变等离子体的密度n。另外，本发明实施例可适用于工艺腔室6中安装的绝缘及非绝缘的卡盘结构，且能够适用于13.56MHz以及其他频率的ICP射频等离子体源。
本发明实施例对功率调整组件如何根据该差值调节上电极组件的输出功率值不做具体限定，例如，可选地，如图1所示，该功率调整组件可以包括电压比较器12和电压传感器131，其中：
电压传感器131用于实时检测卡盘9上表面的偏置电压值，并将该偏置电压值发送至电压比较器12。
电压比较器12用于计算上述偏置电压值与目标偏置电压值V0的差值，且在该差值大于预设阈值时，比较该偏置电压值和目标偏置电压值V0，若该偏置电压值低于目标偏置电压值V0(即等离子体10的密度n高于预设标准)，则减小上电极组件的输出功率值，以降低等离子体10的密度n；若偏置电压值高于目标偏置电压值V0(即等离子体10的离子密度n低于预设标准)，则增大上电极组件的输出功率值，以提高等离子体10的密度n。
考虑到电压检测存在精度误差，为避免该偏置电压值接近目标偏置电压值V0时引起频繁调整，优选地，电压比较器12在上述差值小于等于预设阈值时，保持上电极组件的输出功率值不变。
该预设阈值可以为目标偏置电压V0左右允许的精度范围，即，预设阈值为V0±△Vth中的△Vth。本发明实施例对预设阈值△Vth的大小不做具体限定，例如，可选地，预设阈值△Vth可以为目标偏置电压值V0的1％，即，电压比较器12在偏置电压值位于(1±1％)V0这一区间内时，保持上电极组件的输出功率值不变。
为了提高上电极组件的功率调节效率，优选地，该功率调整组件调节上电极组件的输出功率值的调节幅度与该偏置电压值和目标偏置电压值V0之间的差值△V正相关，从而在差值△V较大时(即等离子体10的密度n与预设标准相差较大时)，更大幅度地调节上电极组件的输出功率值，以提高调节效率。
为了简化计算步骤，进一步提高调节效率，优选地，电压比较器12用 于根据与上述差值对应的差值区间，以及预设的差值区间与调节幅度的对应关系，确定与差值对应的调节幅度，并按该调节幅度调节上电极组件的输出功率值。
本发明实施例对如何分出差值区间不做具体限定，例如，为便于技术人员理解，作为本发明的一种可选实施方式，上述差值区间与调节幅度的对应关系，包括：
第一差值区间：上述差值|△V|大于等于目标偏置电压值V0的50％，即，|△V|≥50％×V0；
第二差值区间：上述差值|△V|大于等于目标偏置电压值V0的20％，且小于目标偏置电压值V0的50％，即，20％×V0≤|△V|＜50％×V0；
第三差值区间：上述差值|△V|大于等于目标偏置电压值V0的5％，且小于目标偏置电压值V0的20％，即，5％×V0≤|△V|＜20％×V0；
第四差值区间：上述差值|△V|大于等于目标偏置电压值V0的1％，且小于目标偏置电压值V0的5％，即，1％×V0≤|△V|＜5％×V0；
其中，第一差值区间对应的第一调节幅度大于第二差值区间对应的第二调节幅度，第二调节幅度大于第三差值区间对应的第三调节幅度，第三调节幅度大于第四差值区间对应的第四调节幅度。
本发明实施例对每个差值区间对应的预设调节幅度(即上电极组件的输出功率值的调节步长△P)不做具体限定，例如，作为本发明的一种可选实施方式，第一调节幅度大于等于50W，第二调节幅度大于等于20W，第三调节幅度大于等于5W，第四调节幅度大于等于1W。
可选地，电压比较器12用于在差值位于上述第一差值区间时，按照50W的步长调节上电极组件的输出功率值；在差值位于上述第二差值区间时，按照20W的步长调节上电极组件的输出功率值；在差值位于上述第三差值区间时，按照5W的步长调节上电极组件的输出功率值；在差值位于上述第四差 值区间时，按照1W的步长调节上电极组件的输出功率值。
本发明实施例对该半导体工艺设备中的其他结构不做具体限定，例如，如图1所示，射频电源1通过匹配器2将功率加载至上电极5(可以为耦合线圈)上，工艺气体通过石英介质窗7上安装的喷嘴11进入工艺腔室6中(工艺腔室中的内衬及聚焦环等相关部件均未标出)，同时上电极5上的射频能量通过介质窗7耦合至工艺腔室6中，产生等离子体10，作用于晶片8，晶片8置于卡盘9上，偏压射频电源4通过匹配器3将射频能量加载至位于卡盘9底部的射频铜柱上，从而提供射频场，产生射频偏压，在晶圆表面形成离子加速鞘层进行晶片9的刻蚀。
可选地，如图1所示，功率调整组件还包括模数转换器132，其中电压传感器131用于实时检测卡盘9上的偏置偏压值，并将检测出的偏置电压值以模拟信号的形式输出给模数转换器132，模数转换器132具有模/数转换功能，用于将电压传感器131以模拟信号形式发送的偏置电压值转换为数字信号，并将该数字信号发送至电压比较器12。
本发明实施例对卡盘9的结构类型不做具体限定，例如，作为本发明的一种可选实施方式，在卡盘9的上表面为陶瓷材料层的上表面时，电压传感器131可以为射频电压传感器，用于实时检测陶瓷材料层的射频电压值，并根据预设的射频电压值与偏置电压值的对应关系将射频电压值转换为偏置电压值。
具体地，该射频电压传感器实时检测距离卡盘上表面最近的射频电压信号Vpp，用以表征晶圆上方的偏置电压值，模数转换器132用于将该射频电压传感器采集到的射频信号转换为检测电压信息，并将检测电压信息发送至电压比较器12。
作为本发明的一种可选实施方式，在卡盘9的上表面为金属层的上表面时，电压传感器131可以为直流电压传感器，用于实时检测金属层的直流电 压值，该直流电压值即为偏置电压值。相应地，模数转换器132用于将该直流电压传感器检测到的模拟信号转换为数字信号，并将数字信号发送至电压比较器12。
作为另一个技术方案，本发明还提供一种功率控制方法，其应用于本发明提供的上述半导体工艺设备，该功率控制方法包括以下步骤：
S1、在上电极组件激发工艺腔室中的工艺气体形成等离子体之后，实时检测卡盘上表面的偏置电压值；
S2、计算上述偏置电压值与目标偏置电压值的差值，且在差值大于预设阈值时，根据差值调节上电极组件的输出功率值，直至差值小于等于预设阈值。
本发明实施例可以直接根据上述差值实时调节上电极组件的输出功率值，无需考虑工艺腔室中其他结构对等离子体密度的影响，例如，可以在下电极功率不变的情况下，通过调节上电极组件的输出功率值来改变等离子体的密度。
在一些可选的实施例中，上述步骤S2，具体包括：
计算偏置电压值与目标偏置电压值的差值，且在该差值大于预设阈值时，比较偏置电压值与目标偏置电压值，若偏置电压值低于目标偏置电压值，则减小上电极组件的输出功率值；若偏置电压值高于目标偏置电压值，则增大上电极组件的输出功率值；在差值小于等于预设阈值时，保持上电极组件的输出功率值不变。这样，可以避免因电压检测存在精度误差而导致偏置电压值接近目标偏置电压值时引起频繁调整。
在一些可选的实施例中，调节上电极组件的输出功率值的调节幅度与偏置电压值和目标偏置电压值的差值正相关。也就是说，在差值较大时(即等离子体的密度与预设标准相差较大时)，可以更大幅度地调节上电极组件的输出功率值，以提高上电极组件的功率调节效率。
在一些可选的实施例中，为了简化计算步骤，进一步提高调节效率，可以根据与差值对应的差值区间，以及预设的差值区间与调节幅度的对应关系，确定与差值对应的调节幅度，并按该调节幅度调节上电极组件的输出功率值。
例如，上述差值区间与所述调节幅度的对应关系，具体包括：
第一差值区间：上述差值|△V|大于等于目标偏置电压值V0的50％，即，|△V|≥50％×V0；
第二差值区间：上述差值|△V|大于等于目标偏置电压值V0的20％，且小于目标偏置电压值V0的50％，即，20％×V0≤|△V|＜50％×V0；
第三差值区间：上述差值|△V|大于等于目标偏置电压值V0的5％，且小于目标偏置电压值V0的20％，即，5％×V0≤|△V|＜20％×V0；
第四差值区间：上述差值|△V|大于等于目标偏置电压值V0的1％，且小于目标偏置电压值V0的5％，即，1％×V0≤|△V|＜5％×V0；
其中，第一差值区间对应的第一调节幅度大于第二差值区间对应的第二调节幅度，第二调节幅度大于第三差值区间对应的第三调节幅度，第三调节幅度大于第四差值区间对应的第四调节幅度。
本发明提供的功率控制方法，通过检测偏置电压值来表征等离子体的密度状态，并进行实时反馈调节，以准确地控制半导体工艺中等离子体密度，补偿因线圈、介质窗等硬件不一致带来的差异，从而可以提高不同工艺腔室之间的工艺一致性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (15)

  1. 一种半导体工艺设备，其特征在于，包括上电极组件、工艺腔室以及功率调整组件，所述工艺腔室中设置有用于承载晶圆的卡盘，其中，
    所述上电极组件用于激发所述工艺腔室中的工艺气体形成等离子体；
    所述功率调整组件用于实时检测所述卡盘上表面的偏置电压值，并计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于预设阈值时，根据所述差值调节所述上电极组件的输出功率值，直至所述差值小于等于所述预设阈值。
  2. 根据权利要求1所述的半导体工艺设备，其特征在于，所述功率调整组件包括电压比较器和电压传感器，其中，
    所述电压传感器用于实时检测所述卡盘上表面的所述偏置电压值，并将所述偏置电压值发送至所述电压比较器；
    所述电压比较器用于计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于所述预设阈值时，比较所述偏置电压值与所述目标偏置电压值，若所述偏置电压值低于所述目标偏置电压值，则减小所述上电极组件的输出功率值；若所述偏置电压值高于所述目标偏置电压值，则增大所述上电极组件的输出功率值；在所述差值小于等于所述预设阈值时，保持所述上电极组件的输出功率值不变。
  3. 根据权利要求2所述的半导体工艺设备，其特征在于，所述电压比较器调节所述上电极组件的输出功率值的调节幅度与所述偏置电压值和所述目标偏置电压值的差值正相关。
  4. 根据权利要求3所述的半导体工艺设备，其特征在于，所述电压比较器用于根据与所述差值对应的差值区间，以及预设的所述差值区间与所述 调节幅度的对应关系，确定与所述差值对应的所述调节幅度，并按该调节幅度调节所述上电极组件的输出功率值。
  5. 根据权利要求4所述的半导体工艺设备，其特征在于，所述差值区间与所述调节幅度的对应关系，包括：
    第一差值区间：所述差值大于等于所述目标偏置电压值的50％；
    第二差值区间：所述差值大于等于所述目标偏置电压值的20％，且小于所述目标偏置电压值的50％；
    第三差值区间：所述差值大于等于所述目标偏置电压值的5％，且小于所述目标偏置电压值的20％；
    第四差值区间：所述差值大于等于所述目标偏置电压值的1％，且小于所述目标偏置电压值的5％；
    其中，所述第一差值区间对应的第一调节幅度大于所述第二差值区间对应的第二调节幅度，所述第二调节幅度大于所述第三差值区间对应的第三调节幅度，所述第三调节幅度大于所述第四差值区间对应的第四调节幅度。
  6. 根据权利要求5所述的半导体工艺设备，其特征在于，所述第一调节幅度大于等于50W，所述第二调节幅度大于等于20W，所述第三调节幅度大于等于5W，所述第四调节幅度大于等于1W。
  7. 根据权利要求1至6中任意一项所述的半导体工艺设备，其特征在于，所述预设阈值为所述目标偏置电压值的1％。
  8. 根据权利要求2至7中任意一项所述的半导体工艺设备，其特征在于，在所述卡盘的上表面为陶瓷材料层的上表面时，所述电压传感器用于实时检测所述陶瓷材料层的射频电压值，并根据预设的所述射频电压值与所述偏置电压值的对应关系将所述射频电压值转换为所述偏置电压值。
  9. 根据权利要求2至7中任意一项所述的半导体工艺设备，其特征在于，在所述卡盘的上表面为金属层的上表面时，所述电压传感器用于实时检测所述金属层的上表面的直流电压，所述直流电压即为所述偏置电压值。
  10. 根据权利要求2至7中任意一项所述的半导体工艺设备，其特征在于，所述功率调整组件还包括模数转换器，所述模数转换器用于将所述电压传感器以模拟信号发送的所述偏置电压值转换为数字信号，并发送至所述电压比较器。
  11. 一种功率控制方法，其特征在于，应用于权利要求1至10中任意一项所述的半导体工艺设备，所述功率控制方法包括：
    在所述上电极组件激发所述工艺腔室中的工艺气体形成等离子体之后，实时检测所述卡盘上表面的偏置电压值；
    计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于预设阈值时，根据所述差值调节所述上电极组件的输出功率值，直至所述差值小于等于所述预设阈值。
  12. 根据权利要求11所述的功率控制方法，其特征在于，所述计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于预设阈值时，根据所述差值调节所述上电极组件的输出功率值，直至所述差值小于等于所述预设阈值，包括：
    计算所述偏置电压值与目标偏置电压值的差值，且在所述差值大于所述预设阈值时，比较所述偏置电压值与所述目标偏置电压值，若所述偏置电压值低于所述目标偏置电压值，则减小所述上电极组件的输出功率值；若所述偏置电压值高于所述目标偏置电压值，则增大所述上电极组件的输出功率值；在所述差值小于等于所述预设阈值时，保持所述上电极组件的输出功率 值不变。
  13. 根据权利要求12所述的功率控制方法，其特征在于，调节所述上电极组件的输出功率值的调节幅度与所述偏置电压值和所述目标偏置电压值的差值正相关。
  14. 根据权利要求13所述的功率控制方法，其特征在于，根据与所述差值对应的差值区间，以及预设的所述差值区间与所述调节幅度的对应关系，确定与所述差值对应的所述调节幅度，并按该调节幅度调节所述上电极组件的输出功率值。
  15. 根据权利要求14所述的功率控制方法，其特征在于，所述差值区间与所述调节幅度的对应关系，包括：
    第一差值区间：所述差值大于等于所述目标偏置电压值的50％；
    第二差值区间：所述差值大于等于所述目标偏置电压值的20％，且小于所述目标偏置电压值的50％；
    第三差值区间：所述差值大于等于所述目标偏置电压值的5％，且小于所述目标偏置电压值的20％；
    第四差值区间：所述差值大于等于所述目标偏置电压值的1％，且小于所述目标偏置电压值的5％；
    其中，所述第一差值区间对应的第一调节幅度大于所述第二差值区间对应的第二调节幅度，所述第二调节幅度大于所述第三差值区间对应的第三调节幅度，所述第三调节幅度大于所述第四差值区间对应的第四调节幅度。
PCT/CN2021/133048 2020-11-27 2021-11-25 半导体工艺设备及功率控制方法 WO2022111567A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020237017163A KR20230091151A (ko) 2020-11-27 2021-11-25 반도체 공정 디바이스 및 전력 제어 방법
US18/254,062 US20240006170A1 (en) 2020-11-27 2021-11-25 Semiconductor process apparatus and power control method
JP2023530718A JP2023550467A (ja) 2020-11-27 2021-11-25 半導体プロセス装置及び電力制御方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011358299.XA CN112530773B (zh) 2020-11-27 2020-11-27 半导体工艺设备
CN202011358299.X 2020-11-27

Publications (1)

Publication Number Publication Date
WO2022111567A1 true WO2022111567A1 (zh) 2022-06-02

Family

ID=74994576

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/133048 WO2022111567A1 (zh) 2020-11-27 2021-11-25 半导体工艺设备及功率控制方法

Country Status (6)

Country Link
US (1) US20240006170A1 (zh)
JP (1) JP2023550467A (zh)
KR (1) KR20230091151A (zh)
CN (1) CN112530773B (zh)
TW (1) TWI798961B (zh)
WO (1) WO2022111567A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112530773B (zh) * 2020-11-27 2023-11-14 北京北方华创微电子装备有限公司 半导体工艺设备
CN113113282B (zh) * 2021-04-01 2023-11-14 北京北方华创微电子装备有限公司 上电极电源功率调节方法、半导体工艺设备
CN113539776B (zh) * 2021-07-06 2022-10-21 北京北方华创微电子装备有限公司 射频电源的校准方法、半导体工艺方法及设备
CN114914147A (zh) * 2022-05-07 2022-08-16 北京北方华创微电子装备有限公司 一种工艺腔室及平行度的检测方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060113037A1 (en) * 2004-11-26 2006-06-01 Ryoji Nishio Plasma processing apparatus and method for controlling the same
CN102024658A (zh) * 2009-09-22 2011-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体处理设备及方法
CN106702335A (zh) * 2015-11-13 2017-05-24 北京北方微电子基地设备工艺研究中心有限责任公司 下电极及半导体加工设备
CN107665800A (zh) * 2016-07-28 2018-02-06 中微半导体设备(上海)有限公司 一种用于等离子处理器的射频电源控制装置及其控制方法
CN108364845A (zh) * 2018-03-20 2018-08-03 武汉华星光电技术有限公司 一种干法刻蚀设备
CN110600357A (zh) * 2019-11-14 2019-12-20 北京北方华创微电子装备有限公司 应用等离子体加工系统进行加工的方法及等离子体加工系统
CN112530773A (zh) * 2020-11-27 2021-03-19 北京北方华创微电子装备有限公司 半导体工艺设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024221A1 (en) * 1999-09-30 2001-04-05 Lam Research Corporation Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
TWI264043B (en) * 2002-10-01 2006-10-11 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
US20050031796A1 (en) * 2003-08-07 2005-02-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling spatial distribution of RF power and plasma density
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US7683289B2 (en) * 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile
US9412670B2 (en) * 2013-05-23 2016-08-09 Lam Research Corporation System, method and apparatus for RF power compensation in plasma etch chamber
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
CN109119317B (zh) * 2017-06-23 2020-11-10 北京北方华创微电子装备有限公司 一种偏压调制方法、偏压调制系统和等离子体处理设备
CN109961997B (zh) * 2017-12-22 2021-11-16 中微半导体设备(上海)股份有限公司 等离子体处理装置及其直流偏置电压控制方法
CN109961998B (zh) * 2017-12-22 2021-06-08 中微半导体设备(上海)股份有限公司 等离子体处理装置及基于聚焦环厚度监测的控制方法
US10607815B2 (en) * 2018-06-29 2020-03-31 Applied Materials, Inc. Methods and apparatuses for plasma chamber matching and fault identification
US10672589B2 (en) * 2018-10-10 2020-06-02 Tokyo Electron Limited Plasma processing apparatus and control method
US10879052B2 (en) * 2018-11-21 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma processing apparatus and manufacturing method using the same
KR20200086826A (ko) * 2019-01-10 2020-07-20 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
CN110752137B (zh) * 2019-11-01 2022-04-22 北京北方华创微电子装备有限公司 偏压控制方法及装置、半导体加工设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060113037A1 (en) * 2004-11-26 2006-06-01 Ryoji Nishio Plasma processing apparatus and method for controlling the same
CN102024658A (zh) * 2009-09-22 2011-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体处理设备及方法
CN106702335A (zh) * 2015-11-13 2017-05-24 北京北方微电子基地设备工艺研究中心有限责任公司 下电极及半导体加工设备
CN107665800A (zh) * 2016-07-28 2018-02-06 中微半导体设备(上海)有限公司 一种用于等离子处理器的射频电源控制装置及其控制方法
CN108364845A (zh) * 2018-03-20 2018-08-03 武汉华星光电技术有限公司 一种干法刻蚀设备
CN110600357A (zh) * 2019-11-14 2019-12-20 北京北方华创微电子装备有限公司 应用等离子体加工系统进行加工的方法及等离子体加工系统
CN112530773A (zh) * 2020-11-27 2021-03-19 北京北方华创微电子装备有限公司 半导体工艺设备

Also Published As

Publication number Publication date
CN112530773B (zh) 2023-11-14
JP2023550467A (ja) 2023-12-01
KR20230091151A (ko) 2023-06-22
TW202221759A (zh) 2022-06-01
CN112530773A (zh) 2021-03-19
US20240006170A1 (en) 2024-01-04
TWI798961B (zh) 2023-04-11

Similar Documents

Publication Publication Date Title
WO2022111567A1 (zh) 半导体工艺设备及功率控制方法
US10115567B2 (en) Plasma processing apparatus
US9805916B2 (en) Plasma processing apparatus
TWI701705B (zh) 電漿處理裝置及電漿處理方法
US8426317B2 (en) Plasma processing apparatus and plasma processing method
US10332760B2 (en) Method for controlling plasma processing apparatus
KR890004882B1 (ko) 드라이에칭 방법 및 장치
JP5319150B2 (ja) プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP3689732B2 (ja) プラズマ処理装置の監視装置
US20150122420A1 (en) Plasma processing apparatus
US20070224709A1 (en) Plasma processing method and apparatus, control program and storage medium
KR100838750B1 (ko) 플라즈마처리장치 및 플라즈마처리방법
US7771608B2 (en) Plasma processing method and apparatus
US8366833B2 (en) Plasma processing apparatus and plasma processing method
WO2018233455A1 (zh) 偏压调制方法、偏压调制系统和等离子体处理设备
CN110610843B (zh) 等离子体处理装置和等离子体处理方法
KR20210097027A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US20150041060A1 (en) Plasma processing apparatus
CN110752135B (zh) 射频偏压调节方法、装置及等离子体刻蚀设备
US11456199B2 (en) Measurement method and measuring jig
US20230170192A1 (en) Method and apparatus for realtime wafer potential measurement in a plasma processing chamber
US11682543B2 (en) Plasma processing method and plasma processing apparatus
WO2024029612A1 (ja) 基板処理システム及び基板処理方法
Lin et al. Feedback control of HfO 2 etch processing in inductively coupled Cl 2/N 2/Ar plasmas
JPH08241887A (ja) プラズマ処理装置及びプラズマ処理方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21897067

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20237017163

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2023530718

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 18254062

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21897067

Country of ref document: EP

Kind code of ref document: A1