WO2022104930A1 - Capteur mems - Google Patents

Capteur mems Download PDF

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Publication number
WO2022104930A1
WO2022104930A1 PCT/CN2020/133739 CN2020133739W WO2022104930A1 WO 2022104930 A1 WO2022104930 A1 WO 2022104930A1 CN 2020133739 W CN2020133739 W CN 2020133739W WO 2022104930 A1 WO2022104930 A1 WO 2022104930A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
mems
glue layer
solder joint
mems sensor
Prior art date
Application number
PCT/CN2020/133739
Other languages
English (en)
Chinese (zh)
Inventor
柏杨
张睿
Original Assignee
瑞声声学科技(深圳)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞声声学科技(深圳)有限公司 filed Critical 瑞声声学科技(深圳)有限公司
Publication of WO2022104930A1 publication Critical patent/WO2022104930A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones

Definitions

  • the present application relates to the technical field of acoustics and electricity, and in particular, to a MEMS sensor.
  • MEMS Micro-Electro-Mechanical-System, Micro-Electro-Mechanical-System, MEMS for short
  • sensors in the prior art such as MEMS microphones, MEMS ultrasonic transducers, MEMS pressure sensors, etc.
  • MEMS microphones MEMS microphones
  • MEMS ultrasonic transducers MEMS pressure sensors, etc.
  • MEMS pressure sensors MEMS pressure sensors
  • the MEMS chip 20 and the ASIC chip 30 are attached to the substrate 11
  • the casing 12 is bonded to the substrate 11 to form a package cavity 10a
  • the MEMS chip 20 and the ASIC chip 30, and the ASIC chip 30 and the substrate 11 are respectively electrically connected by metal wire bonding, for example , using heat, pressure and ultrasonic energy to make the metal lead 4 and the pad tightly welded.
  • a layer of glue is usually covered around the ASIC chip (as shown in Figure 1). ); or cover a layer of glue on the periphery of the MEMS chip (as shown in Figure 2), further, when the ASIC chip is a processor, after covering a layer of glue on the periphery of the MEMS chip, it is usually necessary to encapsulate the ASIC chip with epoxy plastic material wrap (as described in Figure 3), so that the metal leads 4 may pass through materials with different thermal expansion coefficients.
  • the materials with different thermal expansion coefficients that the metal lead 4 passes through are quite different.
  • the shape of the metal lead 4 is a triangular arc, and the metal lead 4 is only bent at one point between two solder joints.
  • the metal lead 4 may be subject to material differences in thermal expansion coefficients during environmental tests such as thermal cycling. Additional cyclic thermal stress is generated on the metal lead 4, causing plastic deformation of the metal lead 4, and even causing fatigue disconnection, which has a great potential reliability hazard.
  • the thermal stress is concentrated in the wedge welding fishtail area of the metal lead 4, which is very easy to cause the metal lead 4 to be disconnected. This leads to device failure and reduces the reliability of the MEMS sensor.
  • the purpose of the present application is to provide a MEMS sensor to solve the technical problem of low reliability of the MEMS sensor in the prior art due to the fracture of metal leads.
  • a MEMS sensor comprising a housing having a packaging cavity, and a MEMS chip and an ASIC chip mounted in the packaging cavity
  • the housing includes a housing for mounting the MEMS chip and the ASIC chip.
  • the MEMS sensor further includes metal leads electrically connecting the MEMS chip and the ASIC chip, the metal leads comprising A first solder joint of the MEMS chip, a first extension portion extending from the first solder joint, a first bending portion bent and extended from the first extension portion in a direction away from the MEMS chip, disposed on the A second solder joint of the ASIC chip, a second extension portion extending from the second solder joint, a second bending portion bent and extended from the second extension portion in a direction away from the ASIC chip, and connecting the first A bent portion and a third extension of the second bent portion.
  • the first solder joints are ball solder joints and the second solder joints are wedge solder joints.
  • the first solder joints are wedge solder joints
  • the second solder joints are ball solder joints.
  • the MEMS sensor further includes a first glue layer covering the outside of the MEMS chip, and the first extension portion and the first bending portion are covered in the first glue layer.
  • the MEMS sensor further includes a second glue layer wrapped outside the ASIC chip, and the second extension portion and the second bending portion are wrapped in the second glue layer.
  • the MEMS sensor further includes a first glue layer wrapped around the MEMS chip, and the first extension portion and the first bending portion are wrapped in the first glue layer;
  • the MEMS sensor further includes a second glue layer wrapped outside the ASIC chip, and the second extension portion and the second bending portion are wrapped in the second glue layer;
  • the thermal expansion coefficients of the first glue layer and the second glue layer are different.
  • the height of the side of the first glue layer away from the substrate relative to the substrate on which the MEMS chip is provided is the same as the height of the side of the MEMS chip away from the substrate relative to the substrate.
  • the height difference between the heights of one side of the MEMS chip is greater than 50 ⁇ m.
  • the height of the side of the second glue layer away from the substrate relative to the substrate on which the MEMS chip is provided is the same as the height of the side of the ASIC chip away from the substrate relative to the substrate.
  • the height difference between the heights of one side of the MEMS chip is greater than 50 ⁇ m.
  • the Young's modulus of the first glue layer is less than 2Mpa.
  • the Young's modulus of the second glue layer is less than 2Mpa.
  • the metal wire electrically connecting the MEMS chip and the ASIC chip includes a first solder joint disposed on the MEMS chip, and a first extension portion extending from the first solder joint. , a first bent portion bent and extended from the first extension portion to a direction away from the MEMS chip, a second solder joint disposed on the ASIC chip, and a second extension portion extended from the second solder joint , a second bending portion extending from the second extending portion to a direction away from the ASIC chip, and a third extending portion connecting the first bending portion and the second bending portion; by the above method ,
  • the shape of the metal lead has been improved.
  • the shape of the metal lead is quadrilateral, which can be stretched at the first bending part and the second bending part, which alleviates the deformation caused by thermal stress concentration, and the metal lead is not easy to break. reliability of MEMS sensors.
  • FIG. 1 is a schematic structural diagram of a first MEMS sensor in the prior art
  • FIG. 2 is a schematic structural diagram of a second type of MEMS sensor in the prior art
  • FIG. 3 is a schematic structural diagram of a third MEMS sensor in the prior art
  • FIG. 4 is a schematic structural diagram of a MEMS sensor according to an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a MEMS sensor in a first preferred manner in an embodiment of the application
  • FIG. 6 is a schematic structural diagram of a MEMS sensor in a second preferred manner in an embodiment of the application.
  • FIG. 7 is a schematic structural diagram of a MEMS sensor in a third preferred manner in an embodiment of the present application.
  • the embodiment of the present application provides a MEMS sensor 100.
  • the MEMS sensor 100 includes a housing 10 having a packaging cavity 10a, a MEMS chip 20 and an ASIC chip 30 installed in the packaging cavity 10a. and the metal leads 40 electrically connecting the MEMS chip 20 and the ASIC chip 30 .
  • the casing 10 includes a substrate 11 for mounting the MEMS chip 20 and the ASIC chip 30 and a casing 12 surrounding the substrate 11 to form the packaging cavity 10a.
  • the metal lead 40 includes a first pad 41 on the MEMS chip 20 , a second pad 42 on the ASIC chip, and a first extension 43 extending from the first pad 41 . , a first bending portion 44 extending from the first extending portion 43 to a direction away from the MEMS chip 20 , a second extending portion 45 extending from the second solder joint 42 , extending from the second The portion 45 is a second bending portion 46 extending away from the ASIC chip 30 and a third extending portion 47 connecting the first bending portion 44 and the second bending portion 46 .
  • the first solder joint 41 is a ball solder joint
  • the second solder joint 42 is a wedge solder joint; or, the first solder joint 41 is a wedge solder joint, and the second solder joint 42 is a ball joint solder joints.
  • the shape of the metal lead 40 is a quadrangle, and both the first bending part 44 and the second bending part 46 can be stretched, which relieves the deformation caused by the thermal stress concentration, and the metal lead 40 is not easy to be broken. The reliability of the MEMS sensor 100 is improved.
  • the MEMS sensor 100 of this embodiment further includes a first glue layer 50 covering the MEMS chip 20 , and the first extension portion 43 and the first bending portion 44 are both covered in the first glue layer 50 .
  • the metal lead 40 is additionally thermally stressed due to the thermal expansion of the first glue layer 50 , the stress concentration can be effectively relieved by the expansion and contraction of the first bending portion 44 , and the metal lead 40 is not easily broken.
  • the height of the side of the first glue layer 50 away from the substrate 11 is h1 relative to the side of the substrate 11 where the MEMS chip 20 is provided, and the MEMS chip 20 is away from a side of the substrate 11 .
  • the height of the side with the MEMS chip 20 relative to the substrate 11 is h2, and the height difference between h1 and h2 is greater than 50 ⁇ m.
  • the Young's modulus of the first glue layer 50 is less than 2Mpa, and the texture of the first glue layer 50 is relatively soft.
  • the first bending portion 44 in the first glue layer 50 is more easily stretched, which further relieves the stress concentration of the metal lead 40 .
  • the material of the first glue layer 50 may be silica gel.
  • the MEMS sensor 100 of this embodiment further includes a second glue layer 60 wrapped around the ASIC chip 30 , and the second extension portion 45 and the second bending portion 46 is wrapped in the second glue layer 60 .
  • the metal lead 40 is additionally thermally stressed due to the thermal expansion of the second glue layer 60 , the stress concentration can be effectively relieved by the expansion and contraction of the second bending portion 46 , and the metal lead 40 is not easily broken.
  • the height of the side of the second glue layer 60 away from the substrate 11 is h3 relative to the side of the substrate 11 where the MEMS chip 20 is provided, and the ASIC chip 30 is away from a side of the substrate 11 .
  • the height of the side with the MEMS chip 20 relative to the substrate 11 is h4, and the height difference between h3 and h4 is greater than 50 ⁇ m.
  • the Young's modulus of the second glue layer 60 is less than 2Mpa, and the texture of the second glue layer 60 is relatively soft.
  • the second bending portion 46 in the second glue layer 60 is easier to expand and contract, which further relieves the stress concentration of the metal lead 40 .
  • the material of the second glue layer 60 may be silica gel.
  • the MEMS sensor 100 of this embodiment also includes a first glue layer 50 covering the outside of the MEMS chip 20 and a second glue layer covering the outside of the ASIC chip 30 at the same time layer 60, the first extension portion 43 and the first bending portion 44 are both covered in the first glue layer 50, and the second extension portion 45 and the second bending portion 46 are covered In the second glue layer 60 , and the thermal expansion coefficients of the first glue layer 50 and the second glue layer 60 are different.
  • the metal leads 40 pass through the first glue layer 50 and the second glue layer 60 with different thermal expansion coefficients at the same time. The difference causes additional thermal stress to the metal lead 40 .
  • the expansion and contraction of the first bending portion 44 and the second bending portion 46 can effectively relieve stress concentration, and the metal lead 40 is not easily broken.
  • the Young's modulus of the first glue layer 50 is less than 2Mpa
  • the Young's modulus of the second glue layer 60 is less than 2Mpa.
  • the first bending part 44 wrapped in the first glue layer 50 and the second glue layer The second bending portion 46 in the 60 is easier to expand and contract, which further relieves the stress concentration of the metal lead 40 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un capteur MEMS (100), et un fil métallique (40) connectant électriquement une puce MEMS (20) et une puce ASIC (30). Le fil métallique (40) comprend un premier joint de soudure (41) prévu sur la puce MEMS (20), une première partie d'extension (43) s'étendant depuis le premier joint de soudure (41), une première partie pliée (44) pliée et s'étendant depuis la première partie d'extension (43) dans une direction s'éloignant de la puce MEMS (20), un second joint de soudure (42) disposé sur la puce ASIC, une deuxième partie d'extension (45) s'étendant depuis le deuxième joint de soudure (42), une deuxième partie pliée (46) pliée et s'étendant depuis la deuxième partie d'extension (45) dans une direction s'éloignant de la puce ASIC (30), et une troisième partie d'extension (47) reliant la première partie pliée (44) et la deuxième partie pliée (46). Le fil métallique (40) a une forme quadrilatérale, et peut à la fois se dilater et se contracter au niveau de la première partie pliée (44) et de la seconde partie pliée (46), atténuant ainsi la déformation causée par la concentration de contraintes thermiques. Le fil métallique (40) ne peut pas être facilement cassé, ce qui permet d'améliorer la fiabilité du capteur MEMS (100).
PCT/CN2020/133739 2020-11-17 2020-12-04 Capteur mems WO2022104930A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202022657128.9 2020-11-17
CN202022657128.9U CN214299264U (zh) 2020-11-17 2020-11-17 一种mems传感器

Publications (1)

Publication Number Publication Date
WO2022104930A1 true WO2022104930A1 (fr) 2022-05-27

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Application Number Title Priority Date Filing Date
PCT/CN2020/133739 WO2022104930A1 (fr) 2020-11-17 2020-12-04 Capteur mems

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CN (1) CN214299264U (fr)
WO (1) WO2022104930A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110036176A1 (en) * 2007-03-14 2011-02-17 Honeywell International Inc. Packaging for chip-on-board pressure sensor
CN102275859A (zh) * 2010-06-13 2011-12-14 苏州敏芯微电子技术有限公司 Mems微传感器的封装结构及其制造方法
CN204291390U (zh) * 2014-11-28 2015-04-22 歌尔声学股份有限公司 一种mems麦克风
CN204442690U (zh) * 2015-01-27 2015-07-01 歌尔声学股份有限公司 Mems麦克风
CN204442602U (zh) * 2015-02-15 2015-07-01 歌尔声学股份有限公司 一种mems传感器
CN209400128U (zh) * 2018-12-25 2019-09-17 歌尔科技有限公司 防水压差传感器
CN111225331A (zh) * 2020-03-16 2020-06-02 瑞声声学科技(深圳)有限公司 Mems麦克风

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110036176A1 (en) * 2007-03-14 2011-02-17 Honeywell International Inc. Packaging for chip-on-board pressure sensor
CN102275859A (zh) * 2010-06-13 2011-12-14 苏州敏芯微电子技术有限公司 Mems微传感器的封装结构及其制造方法
CN204291390U (zh) * 2014-11-28 2015-04-22 歌尔声学股份有限公司 一种mems麦克风
CN204442690U (zh) * 2015-01-27 2015-07-01 歌尔声学股份有限公司 Mems麦克风
CN204442602U (zh) * 2015-02-15 2015-07-01 歌尔声学股份有限公司 一种mems传感器
CN209400128U (zh) * 2018-12-25 2019-09-17 歌尔科技有限公司 防水压差传感器
CN111225331A (zh) * 2020-03-16 2020-06-02 瑞声声学科技(深圳)有限公司 Mems麦克风

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